Display chip transfer method and device, driving backboard and display panel

Abstract

The invention relates to a display chip transfer method and device, a driving backboard and a display panel. The method comprises the following steps: aligning a display chip on a temporary substrate with a driving backboard provided with a black barrier layer, and contacting a chip electrode of the display chip with a receiving electrode of the driving backboard; a receiving electrode of the driving backboard is located in an opening of the black barrier layer, and the opening of the black barrier layer is arranged according to the size of the display chip; performing laser welding on a chip electrode of the display chip and a receiving electrode of the driving back plate, and limiting the display chip through the black barrier layer in the laser welding process; and the temporary substrate is removed, so that the display chip is transferred to the driving backboard. By adopting the method, display chip offset caused by a laser welding process can be reduced, so that the transfer precision of the display chip is improved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display chip transfer method, apparatus, driving backplane, and display panel. Background Technology

[0002] With the development of display technology, ultra-high-definition (UHD) displays have emerged. The manufacturing process of UHD displays requires the mass transfer of display chips while ensuring their proper functioning. Mass transfer refers to transferring millions or even tens of millions of display chips onto a driver backplane. Laser welding technology, as a novel mass transfer process, is increasingly being developed by more and more companies.

[0003] However, current laser welding processes can cause chip misalignment during the laser welding of display chips to the driver backplane, resulting in low chip transfer accuracy. Therefore, reducing chip misalignment caused by laser welding to improve transfer accuracy has become a key technical problem that needs to be solved. Summary of the Invention

[0004] Therefore, it is necessary to provide a display chip transfer method, apparatus, driving backplane, and display panel that can reduce display chip misalignment caused by laser welding process and thus improve display chip transfer accuracy, in order to address the above-mentioned technical problems.

[0005] In a first aspect, this application provides a display chip transfer method, comprising:

[0006] The display chip on the temporary substrate is aligned with the driving backplate having a black barrier layer, and the chip electrode of the display chip is brought into contact with the receiving electrode of the driving backplate; the receiving electrode of the driving backplate is located in the opening of the black barrier layer, and the opening of the black barrier layer is set according to the size of the display chip.

[0007] The chip electrodes of the display chip are laser welded to the receiving electrodes of the driving backplane, and the display chip is limited by the black blocking layer during the laser welding process.

[0008] Remove the temporary substrate so that the display chip is transferred to the driving backplane.

[0009] In one embodiment, the number of openings in the black barrier layer is set according to the number of receiving electrodes on the drive backplane.

[0010] In one embodiment, the opening width of the black blocking layer is set according to the width of the display chip and the target precision, and the opening height of the black blocking layer is less than or equal to the height of the display chip.

[0011] In one embodiment, a laser absorption layer is further disposed on the black blocking layer; the method further includes:

[0012] During laser welding, the laser is absorbed through the laser absorption layer.

[0013] In one embodiment, removing the temporary substrate includes:

[0014] The temporary substrate is removed by vacuum adsorption separation or by peeling off the cover.

[0015] In one embodiment, the method further includes:

[0016] The drive backplane after the temporary substrate has been removed is encapsulated with a transparent encapsulation material to obtain the encapsulated drive backplane.

[0017] Secondly, this application also provides a display chip transfer apparatus, comprising:

[0018] A temporary substrate on which a display chip is disposed, the display chip including chip electrodes;

[0019] A driving backplane includes a receiving electrode and a black blocking layer, wherein the receiving electrode is located within an opening in the black blocking layer, and the opening in the black blocking layer is set according to the size of the display chip;

[0020] The temporary substrate is used to align the display chip with the driving backplane, so that the chip electrode of the display chip contacts the receiving electrode of the driving backplane; the black barrier layer is used to limit the display chip during the laser welding process between the chip electrode of the display chip and the receiving electrode of the driving backplane.

[0021] Thirdly, this application also provides a drive backplane, comprising:

[0022] A plate body, wherein a receiving surface is provided on the plate body;

[0023] A receiving electrode is disposed on the receiving surface;

[0024] A black blocking layer is disposed on the receiving surface, and the receiving electrode is located inside the opening of the black blocking layer; the opening of the black blocking layer is set according to the size of the display chip to be transferred.

[0025] The black barrier layer is used to limit the position of the display chip during the laser welding process.

[0026] Fourthly, this application also provides a display panel, including a display chip and a driving backplane as described in any of the embodiments of the third aspect above.

[0027] The aforementioned display chip transfer method, apparatus, driving backplane, and display panel, by setting a black barrier layer on the driving backplane, with the receiving electrode of the driving backplane located within the opening of the black barrier layer, and the opening of the black barrier layer being set according to the size of the display chip, can limit the display chip during the laser welding process between the chip electrode of the display chip and the receiving electrode of the driving backplane, thereby reducing the display chip displacement caused by the heat effect of laser welding and improving the display chip transfer accuracy. Furthermore, in conventional methods, the display chip is directly welded to the driving backplane without a protective structure. In this embodiment, after removing the temporary substrate, the display chip is embedded within the black barrier layer, which forms a protective structure for the display chip, reducing yield losses caused by lateral forces in subsequent processes. Simultaneously, this embodiment reduces the process of encapsulating with black glue or black film after welding in conventional technologies, improving the luminous efficiency of the display chip. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a flowchart illustrating the chip transfer method in one embodiment;

[0030] Figure 2 This is a schematic diagram of the drive backplane in one embodiment;

[0031] Figure 3 This is a schematic diagram of a structure in which a display chip on a temporary substrate is aligned and pressed with a driving backplate provided with a black barrier layer in one embodiment.

[0032] Figure 4 This is a schematic diagram of the laser welding structure in one embodiment;

[0033] Figure 5 This is a schematic diagram of the structure for removing a temporary substrate in one embodiment;

[0034] Figure 6 This is a schematic diagram of the encapsulation structure of the drive backplane after the temporary substrate is removed, as shown in one embodiment.

[0035] Explanation of reference numerals in the attached figures:

[0036] 200, Drive backplane; 201, Board body; 2011, Receiving surface; 202, Receiving electrode; 203, Black blocking layer; 204, Laser absorption layer; 2031, Opening; 300, Temporary substrate; 400, Display chip; 401, Chip electrode; 500, Transparent encapsulation material. Detailed Implementation

[0037] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings, which illustrate preferred embodiments of the application. However, this application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of this application will be thorough and complete.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0039] It should be understood that spatial relation terms such as "below," "under," "below," "below," "above," "over," etc., can be used here to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, an element or feature described as "below" or "under" or "below" of other elements or features will be oriented "over" of other elements or features. Therefore, the exemplary terms "below" and "under" can include both upper and lower orientations. Furthermore, the device may also include other orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptive terms used herein will be interpreted accordingly.

[0040] Display chip transfer refers to the process of transferring the display chip to the driver backplane. In traditional display chip transfer methods, the display chip and driver backplane are laser-welded. To improve laser welding efficiency, the laser spot size needs to be maximized. However, the laser primarily acts on the driver backplane, resulting in a significant thermal impact. Because the temporary substrate has high light transmittance and receives less thermal impact, a difference in thermal impact exists between the driver backplane and the temporary substrate. This causes the display chip to shift during laser welding, leading to low transfer accuracy.

[0041] Therefore, to address the above problems, a display chip transfer method is proposed, which can reduce the display chip misalignment caused by the heat effect of laser welding, thereby improving the display chip transfer accuracy.

[0042] In one exemplary embodiment, such as Figure 1 As shown, a display chip transfer method is provided. Taking the application of this method to a chip transfer device as an example, the method includes the following steps 102 to 106. Wherein:

[0043] Step 102: Align the display chip on the temporary substrate with the driving backplate having a black barrier layer, so that the chip electrode of the display chip contacts the receiving electrode of the driving backplate; the receiving electrode of the driving backplate is located in the opening of the black barrier layer, and the opening of the black barrier layer is set according to the size of the display chip.

[0044] The temporary substrate is an intermediate substrate used to support and protect the display chip before it is transferred from the initial wafer to the driving backplane. The initial wafer refers to the semiconductor wafer on which the display chip is initially located during the manufacturing process. The driving backplane is the substrate in the display panel used to mount and drive the display chip.

[0045] See Figure 2 This is a schematic diagram of the driving backplane 200 in this embodiment. The driving backplane 200 includes a plate 201, a receiving electrode 202, and a black barrier layer 203. A receiving surface 2011 is provided on the plate 201, the receiving electrode 202 is disposed on the receiving surface 2011, and the black barrier layer 203 is also disposed on the receiving surface 2011. The boundaries of the black barrier layer 203 are located at the two side edges of the plate 201. An opening 2031 is provided in the black barrier layer 203 at the location of the receiving electrode 202, meaning that the receiving electrode 202 of the driving backplane 200 is located within the opening 2031 of the black barrier layer 203. The size of the opening 2031 of the black barrier layer 203 is set according to the size of the display chip.

[0046] Optionally, the black barrier layer is made of a material with good light-blocking properties, weather resistance, high temperature resistance, and excellent adhesion, such as epoxy resin or polyimide.

[0047] Specifically, a laser lifter is used to peel the display chip from the initial wafer and temporarily fix the peeled display chip onto a temporary substrate to ensure that the display chip will not move or be damaged during subsequent processing. The display chips are arranged in an array on the temporary substrate, with a gap between any two adjacent display chips. Optionally, the display chip in this embodiment can be a Micro-LED (Micro Light Emitting Diode) chip or a Mini-LED (Mini Light Emitting Diode) chip. For example, the peeled display chip is fixed to the temporary substrate with an adhesive. The adhesive used in this embodiment does not react with the laser, thereby ensuring that the display chip remains fixed to the temporary substrate during the subsequent laser welding of the chip electrodes to the receiving electrodes of the driving backplane.

[0048] See Figure 3 This is a schematic diagram illustrating the alignment and bonding of the display chip 400 on the temporary substrate 300 with the driving backplate 200 having the black barrier layer 203 in this embodiment. The display chip 400 on the temporary substrate 300 is aligned with the driving backplate 200 having the black barrier layer 203 using a chip transfer device. Alignment refers to aligning the chip electrode 401 of the display chip 400 on the temporary substrate 300 with the receiving electrode 202 of the driving backplate 200. After aligning the display chip 400 with the driving backplate 200, the temporary substrate 300 is pressed together, causing the chip electrode 401 of the display chip 400 to contact and bond with the receiving electrode 202 of the driving backplate 200. At this time, the display chip 400 is located within the opening 2031 of the black barrier layer 203.

[0049] Optionally, the surface of the receiving electrode 202 of the driving backplate 200 is pre-coated with solder, and the chip electrode 401 of the display chip 400 is brought into contact with the solder of the driving backplate 200 by pressing the temporary substrate 300 together.

[0050] Optionally, the pressing method adopted in this embodiment may be, but is not limited to, hot pressing, cold pressing, ultrasonic pressing, and laser pressing.

[0051] Optionally, see Figure 3 A plurality of display chips 400 are fixed on a temporary substrate 300, and a receiving electrode 202 is disposed on a driving backplate 200, which is in contact with the chip electrode 401 of each display chip 400. The chip electrode 401 of each display chip 400 includes a chip cathode and a chip anode, and correspondingly, each receiving electrode 202 of the driving backplate 200 includes a receiving cathode and a receiving anode in contact with the cathode and anode of each display chip 400.

[0052] For example, the material of the temporary substrate 300 may include, but is not limited to, silicon (Si), silicon carbide (SiC), sapphire, quartz, gallium nitride (GaN) or gallium arsenide (GaAs), that is, the temporary substrate 300 may include, but is not limited to, silicon substrate, silicon carbide substrate, sapphire substrate, quartz substrate, gallium nitride substrate or gallium arsenide substrate.

[0053] Step 104 involves laser welding the chip electrodes of the display chip to the receiving electrodes of the driving backplane, and during the welding process, the display chip is restricted by a black barrier layer.

[0054] Optionally, see Figure 4 This is a schematic diagram of laser welding. A laser irradiates the driving backplate 200, causing the chip electrode 401 of the display chip 400 to laser weld with the receiving electrode 202 of the driving backplate 200. This process also achieves eutectic bonding between the chip electrode 401 of the display chip 400 and the solder of the driving backplate 200. During the welding process, because the display chip 400 is located within the opening 2031 of the black barrier layer 203, the black barrier layer 203 can limit the movement of the display chip 400, thus reducing the displacement of the display chip 400 caused by the heat effect of laser welding.

[0055] Optionally, the laser irradiation can be performed by irradiating the entire drive backplane 200 with a laser, or by performing a line scan on the drive backplane 200. The laser can be, but is not limited to, an infrared laser, a carbon dioxide laser, and a solid-state laser.

[0056] Step 106: Remove the temporary substrate to transfer the display chip to the driver backplane.

[0057] After laser welding is completed, the display chip 400 is separated from the temporary substrate 300, the temporary substrate 300 is removed, and the display chip 400 is transferred to the driving backplane 200.

[0058] See Figure 5 The diagram below shows the structure of removing the temporary substrate 300 in this embodiment. After removing the temporary substrate 300, the display chip 400 is embedded in the black barrier layer 203, which forms a protective structure for the display chip 400. This can reduce the yield loss caused by the lateral force in the subsequent process to the display chip 400.

[0059] In the above-described display chip transfer method, a black barrier layer 203 is provided on the driving backplane 200. The receiving electrode 202 of the driving backplane 200 is located within the opening 2031 of the black barrier layer 203, and the opening 2031 of the black barrier layer 203 is set according to the size of the display chip 400. Therefore, during the laser welding process between the chip electrode of the display chip 400 and the receiving electrode 202 of the driving backplane 200, the black barrier layer 203 can limit the display chip 400, thereby reducing the display chip displacement caused by the heat effect of laser welding and improving the display chip transfer accuracy. Furthermore, in the conventional method, the display chip is directly welded onto the driving backplane without a protective structure. In this embodiment, after removing the temporary substrate 300, since the display chip 400 is embedded within the black barrier layer 203, the black barrier layer 203 forms a protective structure for the display chip 400, which can reduce the yield loss caused by the lateral force in subsequent processes. Meanwhile, this embodiment reduces the process of encapsulating black glue or black film after soldering in traditional technology, thereby improving the light efficiency of the display chip 400.

[0060] In one exemplary embodiment, see Figure 2 The number of openings 2031 in the black blocking layer 203 is set according to the number of receiving electrodes 202 in the drive backplate 200.

[0061] Specifically, both the black barrier layer 203 and the receiving electrode 202 are disposed on the receiving surface of the driving backplate 200. To avoid affecting the receiving electrode 202, the black barrier layer 203 needs to have an opening 2031 in the area where each receiving electrode 202 is located, so as to enable the chip electrode 401 of the display chip 400 to contact the receiving electrode 202 of the driving backplate 200, and to limit the position of each display chip 400 during the laser welding process. The number of openings 2031 in the black barrier layer 203 is the same as the number of receiving electrodes 202 in the driving backplate 200.

[0062] In this embodiment, the number of openings 2031 in the black barrier layer 203 is set according to the number of receiving electrodes 202 in the driving backplate 200. This allows each display chip 400 to be limited during the laser welding process between the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplate 200, thereby reducing the offset of the display chip 400 caused by the heat effect of laser welding and improving the transfer accuracy of the display chip 400.

[0063] In one exemplary embodiment, see Figure 2 and Figure 3 The width of the opening 2031 of the black blocking layer 203 is set according to the width of the display chip 400 and the target precision, and the height of the opening 2031 of the black blocking layer 203 is less than or equal to the height of the display chip 400.

[0064] The target accuracy refers to the arrangement accuracy of the display chip 400 on the temporary substrate 300, that is, the accuracy of the arrangement and positioning of the display chip 400 on the temporary substrate 300.

[0065] Specifically, since the arrangement accuracy of the display chips 400 on the temporary substrate 300 is A, the width of the display chips 400 is W, and the height is H, in order to limit the positioning of the display chips 400, the width of the opening 2031 of the black barrier layer 203 can be set to W+2A, so that the offset of the display chips 400 during laser welding is ≤±A. At the same time, in order to ensure that the display chips 400 do not cause short circuits or open circuits when the accuracy on the driving backplane 200 is ±A, the height of the opening 2031 of the black barrier layer 203 must be ≤H.

[0066] In this embodiment, the width of the opening 2031 of the black barrier layer 203 is set according to the width of the display chip 400 and the target precision, and the height of the opening 2031 of the black barrier layer 203 is set to be less than or equal to the height of the display chip 400. This allows the display chip 400 to be limited without affecting the contact between the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplate 200, thus limiting the offset of the display chip 400 during laser welding within the target precision. Simultaneously, it ensures that the display chip 400 will not cause a short circuit or open circuit when its precision on the driving backplate 200 is at the target precision.

[0067] In one exemplary embodiment, see Figure 2 The black blocking layer 203 is also provided with a laser absorption layer 204; the above method also includes: absorbing the laser through the laser absorption layer 204 during the laser welding process.

[0068] Specifically, in this embodiment, a laser absorption layer 204 can also be provided on the black blocking layer 203. The opening width of the laser absorption layer 204 can be the same as that of the black blocking layer 203, the opening height of the laser absorption layer is less than that of the black blocking layer 203, and the sum of the opening heights of the laser absorption layer and the black blocking layer 203 is less than or equal to the height of the display chip 400.

[0069] When laser welding is performed on the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplane 200, since the laser mainly acts on the driving backplane 200, the laser absorption layer 204 absorbs the laser energy, thus preventing damage to the driving backplane 200 from the laser. The laser absorption layer 204 disappears after absorbing the laser energy. (See reference...) Figure 4 .

[0070] Optionally, the laser absorption layer 204 is an organic material well known to those skilled in the art, such as acrylic acid, optical coatings, etc.

[0071] In this embodiment, by absorbing laser energy through the laser absorption layer 204, damage to the drive backplate 200 by the laser can be avoided. At the same time, the welding power can be improved, the eutectic abnormality in the edge area of ​​the drive backplate 200 caused by uneven heat dissipation can be solved, and the welding yield can be improved.

[0072] In an exemplary embodiment, removing the temporary substrate 300 includes removing the temporary substrate 300 by vacuum adsorption separation or by peeling off the cover.

[0073] Specifically, in this embodiment, the temporary substrate 300 can be removed using either vacuum adsorption separation or a peeling method. Vacuum adsorption separation utilizes the principle of vacuum adsorption, where a vacuum pump creates a low-pressure area within the adsorption head, generating suction. The adsorption head contacts the temporary substrate 300, and the suction of the low-pressure area adsorbs the temporary substrate 300 onto the adsorption head. An automated device then lifts the adsorption head, along with the temporary substrate 300, from the display chip 400, achieving separation. Vacuum adsorption separation can be combined with automated devices to improve the removal efficiency of the temporary substrate 300.

[0074] The peeling method refers to softening the adhesive between the display chip 400 and the temporary substrate 300 by heating, or removing the adhesive between the display chip 400 and the temporary substrate 300 by using a solvent, and then separating the temporary substrate 300 from the display chip 400 using a separation device. The peeling method is applicable to different types of adhesives and temporary substrates 300, has low material costs, and is simple to operate.

[0075] In this embodiment, either vacuum adsorption separation or capping can be selected according to actual needs to remove the temporary substrate 300.

[0076] In an exemplary embodiment, the method further includes: encapsulating the drive backplane 200 after the temporary substrate 300 has been removed with a transparent encapsulation material 500 to obtain the encapsulated drive backplane 200.

[0077] See Figure 6 This is a schematic diagram of the structure for encapsulating the driving backplane 200 after the temporary substrate 300 is removed. After the temporary substrate 300 is removed, since the display chip 400 is embedded in the black barrier layer 203, the bottom and sidewalls of the display chip 400 are blocked by the black barrier layer 203. Therefore, the driving backplane 200 after the temporary substrate 300 is removed can be encapsulated by the transparent encapsulation material 500.

[0078] Optionally, the transparent encapsulation material 500 can be polyethylene, polypropylene, polyvinyl alcohol, polyethylene fatty acid ester, polyethylene terephthalate, etc., which are well known to those skilled in the art.

[0079] In this embodiment, the driving backplane 200 after the temporary substrate 300 is removed is encapsulated with a transparent encapsulation material 500. Since the transparent encapsulation material 500 can simultaneously provide protection for the display chip 400 and optical transmission, it reduces the number of material layers required in traditional packaging, such as reducing the manufacturing of additional protective layers for the display chip 400 and optical windows, and also reducing process steps such as molding, heat curing, and cutting. This improves the encapsulation efficiency of the driving backplane 200, enhances the optical transmission performance of the driving backplane 200, and also reduces the encapsulation cost.

[0080] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0081] Based on the same inventive concept, this application also provides a display chip transfer apparatus for implementing the display chip transfer method described above. The solution provided by this apparatus is similar to the implementation described in the above method; therefore, the specific limitations in one or more display chip transfer apparatus embodiments provided below can be found in the limitations of the display chip transfer method described above, and will not be repeated here.

[0082] In an exemplary embodiment, a display chip transfer apparatus is provided, comprising: a temporary substrate 300 and a driving backplate 200. A display chip 400 is disposed on the temporary substrate 300, and the display chip 400 includes chip electrodes 401. The driving backplate 200 includes a receiving electrode 202 and a black barrier layer 203, the receiving electrode 202 being located within an opening 2031 of the black barrier layer 203, the opening 2031 of the black barrier layer 203 being configured according to the size of the display chip 400. The temporary substrate 300 is used to align the display chip 400 with the driving backplate 200, so that the chip electrodes 401 of the display chip 400 contact the receiving electrodes 202 of the driving backplate 200; the black barrier layer 203 is used to limit the display chip 400 during laser welding of the chip electrodes 401 of the display chip 400 with the receiving electrodes 202 of the driving backplate 200.

[0083] In this embodiment, a black barrier layer 203 is provided on the driving backplate 200. The receiving electrode 202 of the driving backplate 200 is located within the opening 2031 of the black barrier layer 203, and the opening 2031 of the black barrier layer 203 is set according to the size of the display chip 400. Therefore, during the laser welding process between the chip electrode of the display chip 400 and the receiving electrode 202 of the driving backplate 200, the black barrier layer 203 can limit the position of the display chip 400, thereby reducing the displacement of the display chip caused by the heat effect of laser welding and improving the transfer accuracy of the display chip. Furthermore, in traditional chip transfer devices, the display chip on the driving backplate has no protective structure during laser welding. In this embodiment, since the display chip 400 is embedded in the black barrier layer 203, the black barrier layer 203 forms a protective structure for the display chip 400, which can reduce the yield loss caused by the lateral force in subsequent processes. At the same time, this embodiment reduces the process of encapsulating with black glue or black film after welding in conventional technologies, improving the light efficiency of the display chip 400.

[0084] In one exemplary embodiment, the number of openings 2031 in the black barrier layer 203 is set according to the number of receiving electrodes 202 in the drive backplane 200.

[0085] In an exemplary embodiment, the width of the opening 2031 of the black blocking layer 203 is set according to the width of the display chip 400 and the target precision, and the height of the opening 2031 of the black blocking layer 203 is less than or equal to the height of the display chip 400.

[0086] In an exemplary embodiment, a laser absorption layer 204 is further disposed on the black blocking layer 203. The laser absorption layer 204 is used to absorb laser during the laser welding process between the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplane 200.

[0087] In one exemplary embodiment, see Figure 2 A driving backplane 200 is provided, comprising: a plate 201, on which a receiving surface 2011 is disposed; a receiving electrode 202 disposed on the receiving surface 2011; and a black blocking layer 203 disposed on the receiving surface 2011, wherein the receiving electrode 202 is located within an opening 2031 of the black blocking layer 203; the opening 2031 of the black blocking layer 203 is set according to the size of the display chip 400 to be transferred.

[0088] During the transfer of the display chip 400, the display chip 400 on the temporary substrate 300 is aligned with the driving backplate 200, so that the chip electrode 401 of the display chip 400 contacts the receiving electrode 202 of the driving backplate 200; the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplate 200 are laser welded, and during the laser welding process, the display chip 400 is limited by the black barrier layer 203; the temporary substrate 300 is removed, so that the display chip 400 is transferred to the driving backplate 200.

[0089] In this embodiment, a black barrier layer 203 is provided on the driving backplate 200. The receiving electrode 202 of the driving backplate 200 is located within the opening 2031 of the black barrier layer 203, and the opening 2031 of the black barrier layer 203 is set according to the size of the display chip 400. Therefore, during the laser welding process between the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplate 200, the black barrier layer 203 can limit the position of the display chip 400, thereby reducing the displacement of the display chip 400 caused by the heat effect of laser welding and improving the transfer accuracy of the display chip 400. Furthermore, in the conventional method, the display chip is directly welded to the driving backplate without a protective structure. In this embodiment, after the temporary substrate 300 is removed, the display chip 400 is embedded within the black barrier layer 203, which forms a protective structure for the display chip 400, reducing the yield loss caused by the lateral force in subsequent processes.

[0090] In one exemplary embodiment, see Figure 2 A laser absorption layer 204 is also provided on the black blocking layer 203 to absorb laser during the laser welding process between the chip electrode 401 of the display chip 400 and the receiving electrode 202 of the driving backplate 200.

[0091] In one exemplary embodiment, see Figure 2 The number of openings 2031 in the black blocking layer 203 is set according to the number of receiving electrodes 202 in the drive backplate 200.

[0092] In one exemplary embodiment, see Figure 2 and Figure 3 The width of the opening 2031 of the black blocking layer 203 is set according to the width of the display chip 400 and the target precision, and the height of the opening 2031 of the black blocking layer 203 is less than or equal to the height of the display chip 400.

[0093] In one exemplary embodiment, a display panel is provided, which includes a display chip 400 and a driving backplane 200 as described in any of the above embodiments. Exemplarily, the display panel may include, but is not limited to, a mobile phone display, a computer display, a watch screen, and an automotive display.

[0094] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0095] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for transferring a display chip, characterized in that, The method includes: The display chip on the temporary substrate is aligned with the driving backplate having a black barrier layer, and the chip electrode of the display chip is brought into contact with the receiving electrode of the driving backplate; the receiving electrode of the driving backplate is located in the opening of the black barrier layer, and the opening of the black barrier layer is set according to the size of the display chip. The chip electrodes of the display chip are laser welded to the receiving electrodes of the driving backplane, and the display chip is limited by the black blocking layer during the laser welding process. Remove the temporary substrate so that the display chip is transferred to the driving backplane.

2. The method according to claim 1, characterized in that, The number of openings in the black barrier layer is set according to the number of receiving electrodes on the drive backplate.

3. The method according to claim 1, characterized in that, The opening width of the black blocking layer is set according to the width of the display chip and the target precision, and the opening height of the black blocking layer is less than or equal to the height of the display chip.

4. The method according to claim 1, characterized in that, The black blocking layer is further provided with a laser absorption layer; the method also includes: During laser welding, the laser is absorbed through the laser absorption layer.

5. The method according to claim 1, characterized in that, The removal of the temporary substrate includes: The temporary substrate is removed by vacuum adsorption separation or by peeling off the cover.

6. The method according to claim 1, characterized in that, The method further includes: The drive backplane after the temporary substrate has been removed is encapsulated with a transparent encapsulation material to obtain the encapsulated drive backplane.

7. A display chip transfer device, characterized in that, The device includes: A temporary substrate on which a display chip is disposed, the display chip including chip electrodes; A driving backplane includes a receiving electrode and a black blocking layer, wherein the receiving electrode is located within an opening in the black blocking layer, and the opening in the black blocking layer is set according to the size of the display chip; The temporary substrate is used to align the display chip with the driving backplane, so that the chip electrode of the display chip contacts the receiving electrode of the driving backplane; the black barrier layer is used to limit the display chip during the laser welding process between the chip electrode of the display chip and the receiving electrode of the driving backplane.

8. A drive backplane, characterized in that, The drive backplate includes: A plate body, wherein a receiving surface is provided on the plate body; A receiving electrode is disposed on the receiving surface; A black blocking layer is disposed on the receiving surface, and the receiving electrode is located inside the opening of the black blocking layer; the opening of the black blocking layer is set according to the size of the display chip. The black barrier layer is used to limit the position of the display chip during the laser welding process between the chip electrode of the display chip and the receiving electrode of the driving backplate.

9. The drive backplane according to claim 8, characterized in that, The black blocking layer is also provided with a laser absorption layer, which is used to absorb laser light during the laser welding process between the chip electrode of the display chip and the receiving electrode of the driving backplate.

10. A display panel, characterized in that, The display panel includes a display chip and a driving backplate as described in any one of claims 8 to 9.

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