Light-emitting panel and preparation method thereof

Abstract

The invention provides a light-emitting panel and a preparation method of the light-emitting panel. The light-emitting panel comprises a driving substrate, a plurality of light-emitting units, an electrode structure and a light taking structure, the light-emitting units are located on the driving substrate, and one side of each light-emitting unit is electrically connected with the driving substrate; the electrode structure is a net-shaped metal wall structure with a plurality of cells, the light-emitting units are located in the cells respectively, the electrode structure is electrically connected with the other sides of the light-emitting units respectively, and the electrode structure is electrically connected with the driving substrate; the light extraction structure covers the light emitting units and the electrode structure, and the light extraction structure is provided with a plurality of protrusions arranged in an array mode.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a light-emitting panel and a method for preparing the light-emitting panel. Background Technology

[0002] With the development of micro light-emitting diode (Micro LED) technology, light-emitting panels using Micro LEDs as pixels have emerged.

[0003] In related technologies, the light-emitting panel includes a driving substrate and multiple light-emitting units, wherein the light-emitting units are the aforementioned MicroLEDs. The multiple light-emitting units are located on the driving substrate, and each light-emitting unit is electrically connected to the driving substrate.

[0004] Due to the small pixel size and close spacing of Micro LEDs, as well as the large light emission angle, the collimation and light emission efficiency of the light-emitting panel are affected. Summary of the Invention

[0005] This disclosure provides a light-emitting panel and a method for manufacturing the light-emitting panel, which can improve the collimation and light extraction efficiency of the light-emitting panel. The technical solution is as follows:

[0006] On the one hand, a light-emitting panel is provided, the light-emitting panel comprising: a driving substrate, a plurality of light-emitting units, an electrode structure, and a light-harvesting structure;

[0007] The plurality of light-emitting units are located on the driving substrate, and one side of each light-emitting unit is electrically connected to the driving substrate.

[0008] The electrode structure is a mesh metal wall structure with multiple cells, the multiple light-emitting units are respectively located in the multiple cells, the electrode structure is electrically connected to the other side of the multiple light-emitting units, and the electrode structure is electrically connected to the driving substrate;

[0009] The light-collecting structure covers the plurality of light-emitting units and the electrode structure, and the light-collecting structure has a plurality of protrusions arranged in an array.

[0010] Optionally, the protrusion is conical, the bottom of the cone is circular, and the sidewalls of the cone are convex arc surfaces.

[0011] Optionally, the light-collecting structure further includes a leveling layer, which covers the plurality of light-emitting units and the electrode structure and fills the gap between the plurality of light-emitting units and the electrode structure, with the plurality of protrusions located on the leveling layer.

[0012] Optionally, the material of the light-collecting structure is PDMS, PMMA, or silicon oxide.

[0013] Optionally, each of the light-emitting units has a corresponding protrusion on its other side, and each cell containing the light-emitting unit corresponds to a ring of protrusions, with a ring of protrusions surrounding one of the protrusions.

[0014] Optionally, the light-emitting panel further includes: an insulating layer and a first transparent conductive layer;

[0015] The insulating layer covers the plurality of light-emitting units and the driving substrate between the plurality of light-emitting units;

[0016] The insulating layer has a first through hole corresponding to each of the light-emitting units, and the first transparent conductive layer covers the insulating layer and is electrically connected to each of the light-emitting units through each of the first through holes.

[0017] The electrode structure is located on the first transparent conductive layer and is situated in the groove of the first transparent conductive layer between each of the light-emitting units.

[0018] Optionally, the light-emitting unit includes

[0019] A bonding metal layer, a second transparent conductive layer, a second semiconductor layer, an active layer, and a first semiconductor layer are sequentially stacked on the driving substrate.

[0020] Optionally, the distance between the side of the electrode structure away from the driving substrate and the driving substrate is greater than the distance between the side of the active layer away from the driving substrate and the driving substrate.

[0021] The distance between the side of the electrode structure closest to the driving substrate and the driving substrate is less than the distance between the side of the active layer closest to the driving substrate and the driving substrate.

[0022] On the other hand, a method for preparing a light-emitting panel is provided, the method comprising:

[0023] An epitaxial layer is fabricated on a temporary substrate;

[0024] The epitaxial layer is bonded to the driving substrate;

[0025] The epitaxial layer is patterned to obtain multiple light-emitting units, and one side of each light-emitting unit is electrically connected to the driving substrate.

[0026] An electrode structure is fabricated, which is a mesh metal wall structure with multiple cells. The multiple light-emitting units are respectively located in the multiple cells. The electrode structure is electrically connected to the other side of the multiple light-emitting units and electrically connected to the driving substrate.

[0027] A light-collecting structure is fabricated, which covers the plurality of light-emitting units and the electrode structure, and the light-collecting structure has a plurality of protrusions arranged in an array.

[0028] Optionally, the method further includes:

[0029] After the epitaxial layer is patterned, an insulating layer is fabricated, which covers the plurality of light-emitting units and the driving substrate between the plurality of light-emitting units. The insulating layer has a first through-hole corresponding to each of the light-emitting units.

[0030] A first transparent conductive layer is fabricated, which covers the insulating layer and is electrically connected to each of the light-emitting units through each of the first through holes.

[0031] After the electrode structure is fabricated, the electrode structure is located on the first transparent conductive layer and in the groove of the first transparent conductive layer between each of the light-emitting units.

[0032] The beneficial effects of the technical solutions provided in this disclosure are:

[0033] In this embodiment of the present disclosure, one side of each of the multiple light-emitting units is electrically connected to the driving substrate, and the other side of each of the multiple light-emitting units is electrically connected to the electrode structure. The electrode structure serves as a common electrode and is then electrically connected to the driving substrate, thereby enabling the driving substrate to drive each light-emitting unit.

[0034] The electrode structure is a mesh metal wall structure with multiple cells. Multiple light-emitting units are located in multiple cells. The metal wall can reflect the light that was originally emitted to the side and then emit it again, thereby reducing the emission angle of the light-emitting unit. The light emitted from the cells of the metal wall will pass through the light-collecting structure. The multiple protrusions of the array of the light-collecting structure can improve the collimation of the light and further reduce the emission angle.

[0035] In summary, by designing the electrode structure and light-collecting structure, the light emission angle of each pixel in the light-emitting panel can be effectively reduced, thereby improving the collimation and light emission efficiency. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of this disclosure;

[0038] Figure 2 This is a flowchart of a method for preparing a light-emitting panel according to an embodiment of the present disclosure;

[0039] Figure 3 This is a flowchart of another method for preparing a light-emitting panel provided in this disclosure embodiment;

[0040] Figure 4 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0041] Figure 5 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0042] Figure 6 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0043] Figure 7 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0044] Figure 8 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0045] Figure 9 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0046] Figure 10 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0047] Figure 11 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0048] Figure 12 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0049] Figure 13 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0050] Figure 14 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0051] Figure 15 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure;

[0052] Figure 16 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in the embodiments of this disclosure.

[0053] The attached figures are labeled as follows:

[0054] 10: Driving substrate; 20: Light-emitting unit; 30: Electrode structure; 40: Light-harvesting structure; 50: Insulating layer; 60: First transparent conductive layer; 70: Temporary substrate; 80: First bonding metal; 90: Second bonding metal;

[0055] 11: Second via; 21: Bonding metal layer; 22: Second transparent conductive layer; 23: Second semiconductor layer; 24: Active layer; 25: First semiconductor layer; 26: Transparent contact layer; 31: Cell cell; 41: Protrusion; 42: Filling layer; 51: First via. Detailed Implementation

[0056] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0057] Figure 1 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting panel includes: a driving substrate 10, a plurality of light-emitting units 20, an electrode structure 30, and a light-collecting structure 40;

[0058] The plurality of light-emitting units 20 are located on the driving substrate 10, and one side of each light-emitting unit 20 is electrically connected to the driving substrate 10.

[0059] The electrode structure 30 is a mesh metal wall structure with multiple cells 31. The multiple light-emitting units 20 are respectively located in the multiple cells 31. The electrode structure 30 is electrically connected to the other side of the multiple light-emitting units 20. The electrode structure 30 is electrically connected to the driving substrate 10.

[0060] The light-collecting structure 40 covers the plurality of light-emitting units 20 and the electrode structure 30, and the light-collecting structure 40 has a plurality of protrusions 41 arranged in an array.

[0061] In this embodiment of the present disclosure, one side of each of the multiple light-emitting units is electrically connected to the driving substrate, and the other side of each of the multiple light-emitting units is electrically connected to the electrode structure. The electrode structure serves as a common electrode and is then electrically connected to the driving substrate, thereby enabling the driving substrate to drive each light-emitting unit.

[0062] The electrode structure is a mesh metal wall structure with multiple cells. Multiple light-emitting units are located in multiple cells. The metal wall can reflect the light that was originally emitted to the side and then emit it again, thereby reducing the emission angle of the light-emitting unit. The light emitted from the cells of the metal wall will pass through the light-collecting structure. The multiple protrusions of the array of the light-collecting structure can improve the collimation of the light and further reduce the emission angle.

[0063] In summary, by designing the electrode structure and light-collecting structure, the light emission angle of each pixel in the light-emitting panel can be effectively reduced, thereby improving the collimation and light emission efficiency.

[0064] For example, the light-emitting panel can also be a display panel, in which case the design of the electrode structure and the light-collecting structure can also solve the crosstalk problem between different pixels.

[0065] In this embodiment of the disclosure, the driving substrate 10 may be a complementary metal oxide semiconductor (COMS) substrate.

[0066] The aforementioned electrode structure can be electrically connected to the driving substrate 10 at the edge position.

[0067] In one example, the driving substrate 10 may include a silicon substrate, a plurality of transistors, and a multilayer insulating dielectric layer.

[0068] The silicon substrate has a first surface and a second surface. Multiple transistors and a multilayer insulating dielectric layer are disposed on the second surface of the silicon substrate. The insulating dielectric layer covers the transistors. The multilayer insulating dielectric layer has multiple second vias and metal filling each second via. The multiple second vias correspond to multiple transistors, and the metal in the second vias connects to the corresponding transistors.

[0069] The transistors and second vias are periodically and regularly distributed, for example, in an array, with each period corresponding to one pixel of the light-emitting panel.

[0070] The driving substrate 10 also includes a circuit structure for controlling and connecting transistors. By inputting signals through the circuit structure, the switching and current magnitude of the transistors are controlled, thereby controlling the switching and brightness of the light-emitting unit.

[0071] Figure 1 A plurality of second through holes 11 are shown in the driving substrate 10, each of which is filled with metal to achieve electrical connection between the light-emitting unit 20 and the transistor in the driving substrate 10.

[0072] In other embodiments, the driving substrate 10 may also be other types of substrates, such as thin-film transistor array substrates, etc., and the embodiments disclosed herein do not limit this.

[0073] In this embodiment of the disclosure, the light-emitting unit 20 can be a Micro LED.

[0074] For example, the light-emitting unit 20 includes: a bonding metal layer 21, a second transparent conductive layer 22, a second semiconductor layer 23, an active layer 24 and a first semiconductor layer 25, which are sequentially stacked on the driving substrate 10.

[0075] The second semiconductor layer 23, the active layer 24 and the first semiconductor layer 25 constitute an epitaxial structure, the bonding metal layer 21 realizes the bonding between the epitaxial layer and the driving substrate, and the second transparent conductive layer 22 is responsible for current spread.

[0076] Optionally, the light-emitting unit may also include other film layers, such as a current blocking layer, an ohmic contact layer, etc.

[0077] In other embodiments, the light-emitting unit 20 may also be other light-emitting devices, and this disclosure does not limit this.

[0078] For example, the material of the bonding metal layer 21 can be titanium (Ti), platinum (Pt), gold (Au), aluminum (Al) or tin (Sn), etc.

[0079] Using the above materials not only ensures bonding and electrical connection effects, but also reflects the light emitted by the light-emitting unit.

[0080] For example, the second transparent conductive layer 22 can be an indium tin oxide (ITO) layer.

[0081] In one example, the first semiconductor layer 25 can be an N-type semiconductor layer, and the second semiconductor layer 23 can be a P-type semiconductor layer.

[0082] For example, the first semiconductor layer 25 can be an N-type gallium nitride layer, and the second semiconductor layer 23 can be a P-type gallium nitride layer.

[0083] In another example, the first semiconductor layer 25 can be a P-type semiconductor layer and the second semiconductor layer 23 can be an N-type semiconductor layer.

[0084] In this embodiment of the disclosure, the active layer 24 can be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0085] like Figure 1 As shown, the light-emitting unit 20 has a mesa-shaped structure, which includes two levels. The first level mesa-shaped structure is composed of a bonding metal layer 21 and a second transparent conductive layer 22, and the second level mesa-shaped structure is composed of a second semiconductor layer 23, an active layer 24 and a first semiconductor layer 25. The first level mesa-shaped structure and the second level mesa-shaped structure form a step.

[0086] Both the first-stage and second-stage frustum-shaped structures can be truncated cones, with the bottom circular diameter of the second-stage frustum-shaped structure being smaller than the top circular diameter of the first-stage frustum-shaped structure. That is, the diameter of the second semiconductor layer 23 is smaller than the diameter of the second transparent conductive layer 22.

[0087] The first-level and second-level frustum structures can also be prismatic, with rectangular base and top surfaces.

[0088] In this embodiment of the disclosure, the cell 31 of the electrode structure 30 can be rectangular or circular, and a light-emitting unit 20 is arranged in each rectangle or circle.

[0089] In this embodiment of the disclosure, the electrode structure 30 can be an electrode formed from one or more of the following materials: chromium (Cr), Al, Ti, Au, etc.

[0090] See you again Figure 1 The light-collecting structure 40 further includes a leveling layer 42, which covers the plurality of light-emitting units 20 and the electrode structure 30 and fills the gap between the plurality of light-emitting units 20 and the electrode structure 30. The plurality of protrusions 41 are located on the leveling layer 42.

[0091] In this implementation, the gaps between multiple light-emitting units 20 and electrode structure 30 are first filled, and then a protrusion 41 is set on the filled area. This can better control the light emission angle of the light-emitting units and improve collimation and light emission efficiency.

[0092] In one example of this disclosure, the protrusion 41 is conical, the bottom of the cone is circular, and the sidewalls of the cone are convex arc surfaces.

[0093] The cone here is a cone in a broad sense, that is, a shape with a top as one end and sloping sidewalls between the top and bottom.

[0094] In other examples, the protrusion 41 may also be conical or even non-conical.

[0095] In this embodiment of the disclosure, the material of the light-collecting structure 40 is polydimethylsiloxane (PDMS), polymethyl methacrylate (PMMA), or silicon dioxide (e.g., SiO2).

[0096] The above-mentioned materials have good light transmittance and are easy to manufacture into the above-mentioned raised structures.

[0097] like Figure 1 As shown, each of the light-emitting units 20 corresponds to a protrusion 41 on the other side, and each cell 31 containing the light-emitting unit 20 corresponds to a ring of protrusions 41, with a ring of protrusions 41 surrounding a protrusion 41.

[0098] Here, "a circle" can refer to a rectangular circle or a circular circle.

[0099] In this implementation, the light emitted directly passes through the other side of the light-emitting unit 20 and is emitted directly through a protrusion 41. The light reflected by the metal wall is reflected or refracted by the protrusion 41 corresponding to the cell 31 where the light-emitting unit 20 is located, thereby limiting the light emission angle and enhancing collimation and light emission efficiency.

[0100] See you again Figure 1 The light-emitting panel may also include an insulating layer 50 and a first transparent conductive layer 60.

[0101] The insulating layer 50 covers the plurality of light-emitting units 20 and the driving substrate 10 between the plurality of light-emitting units 20.

[0102] The insulating layer 50 has a first through hole 51 corresponding to each of the light-emitting units 20. The first transparent conductive layer 60 covers the insulating layer 50 and is electrically connected to each of the light-emitting units 20 through each of the first through holes 51.

[0103] The electrode structure 30 is located on the first transparent conductive layer 60 and is situated in the groove of the first transparent conductive layer 60 between each of the light-emitting units 20.

[0104] In this implementation, an insulating layer is provided to isolate each light-emitting unit and prevent short circuits; a first transparent conductive layer is provided to connect each light-emitting unit and the electrode structure to realize a common electrode.

[0105] The insulating layer 50 can be a transparent insulating layer, which covers the sidewall of the light-emitting unit 20.

[0106] For example, the material of the insulating layer 50 may be at least one of silicon oxide or silicon nitride.

[0107] like Figure 1 As shown, the first through-hole 51 in the insulating layer 50 can expose the entire top surface of the first semiconductor layer 25, thereby enabling the first transparent conductive layer 60 to make full electrical contact with the first semiconductor layer 25.

[0108] For example, the first transparent conductive layer 60 may be an ITO layer.

[0109] like Figure 1 As shown, the bottom of the metal wall of the electrode structure 30 is located within a groove in the first transparent conductive layer 60, which is positioned between adjacent light-emitting units 20. The top of the metal wall of the electrode structure 30 corresponds to the boundary between two adjacent rings of protrusions 41.

[0110] The width of the metal wall can be greater than the width of the groove, but less than the distance between the bottoms of adjacent light-emitting units 20.

[0111] like Figure 1 As shown, the distance between the side of the electrode structure 30 away from the driving substrate 10 and the driving substrate 10 is greater than the distance between the side of the active layer 24 away from the driving substrate 10 and the driving substrate 10.

[0112] The distance between the side of the electrode structure 30 closest to the driving substrate 10 and the driving substrate 10 is less than the distance between the side of the active layer 24 closest to the driving substrate 10 and the driving substrate 10.

[0113] In this implementation, the top and bottom surfaces of the electrode structure 30 are configured as described above, which together with the bonding metal layer can fully reflect the emitted light, thereby improving the light emission from the front side.

[0114] like Figure 1 As shown, the side of the electrode structure 30 away from the driving substrate 10 is flush with the side of the first transparent conductive layer 60 away from the driving substrate 10.

[0115] Optionally, the light-emitting unit 20 further includes a transparent contact layer 26 located on the first semiconductor layer 25, and the first semiconductor layer 25 is in contact with the first transparent conductive layer 60 through the transparent contact layer 26.

[0116] The transparent contact layer 26 can be ITO, ohmic contact, highly doped GaN layer, AlGaN layer, etc.

[0117] It is worth noting that, in the embodiments of this disclosure, the structure can be selectively added or reduced based on the structure of the light-emitting panel described above, and this disclosure does not impose any restrictions on this.

[0118] Figure 2 This is a flowchart illustrating a method for fabricating a light-emitting panel according to an embodiment of this disclosure. See also... Figure 2 The method includes the following steps:

[0119] S11. Fabricate an epitaxial layer on a temporary substrate.

[0120] S12. The epitaxial layer is bonded to the driving substrate.

[0121] S13. The epitaxial layer is patterned to obtain multiple light-emitting units, and one side of each light-emitting unit is electrically connected to the driving substrate.

[0122] S14. Fabricate an electrode structure, wherein the electrode structure is a mesh metal wall structure with multiple cells, the multiple light-emitting units are respectively located in the multiple cells, the electrode structure is electrically connected to the other side of the multiple light-emitting units, and the electrode structure is electrically connected to the driving substrate.

[0123] S15. Fabricate a light-collecting structure, the light-collecting structure covering the plurality of light-emitting units and the electrode structure, the light-collecting structure having a plurality of protrusions arranged in an array.

[0124] In this embodiment of the present disclosure, one side of each of the multiple light-emitting units is electrically connected to the driving substrate, and the other side of each of the multiple light-emitting units is electrically connected to the electrode structure. The electrode structure serves as a common electrode and is then electrically connected to the driving substrate, thereby enabling the driving substrate to drive each light-emitting unit.

[0125] The electrode structure is a mesh metal wall structure with multiple cells. Multiple light-emitting units are located in multiple cells. The metal wall can reflect the light that was originally emitted to the side and then emit it again, thereby reducing the emission angle of the light-emitting unit. The light emitted from the cells of the metal wall will pass through the light-collecting structure. The multiple protrusions of the array of the light-collecting structure can improve the collimation of the light and further reduce the emission angle.

[0126] In summary, by designing the electrode structure and light-collecting structure, the light emission angle of each pixel in the light-emitting panel can be effectively reduced, thereby improving the collimation and light emission efficiency.

[0127] Figure 3 This is a flowchart of another method for fabricating a light-emitting panel provided in this disclosure. See also... Figure 3 The method includes the following steps:

[0128] S21. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on a temporary substrate, and the first semiconductor layer, the active layer, and the second semiconductor layer constitute an epitaxial layer.

[0129] The temporary substrate can be a sapphire substrate.

[0130] In one example, step S21 includes:

[0131] The first step is to fabricate the first semiconductor layer on a temporary substrate.

[0132] In this embodiment of the disclosure, the first semiconductor layer is an N-type GaN layer.

[0133] The second step is to fabricate an active layer on the first semiconductor layer.

[0134] In this embodiment of the disclosure, the active layer is a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.

[0135] The third step is to fabricate a second semiconductor layer on the active layer to obtain the epitaxial layer.

[0136] In this embodiment of the disclosure, the second semiconductor layer is a P-type GaN layer.

[0137] In the embodiments disclosed herein, the above-mentioned semiconductor layer can be grown using a Veeco K465i, C4, or RB MOCVD (Metal Organic Chemical Vapor Deposition) apparatus or an AIXTRON MOCVD apparatus. High-purity H2 (hydrogen), high-purity N2 (nitrogen), or a mixture of high-purity H2 and high-purity N2 is used as the carrier gas; high-purity NH3 is used as the N source; trimethylgallium (TMGa) and triethylgallium (TEGa) are used as gallium sources; trimethylindium (TMIn) is used as the indium source; silane (SiH4) is used as the N-type dopant; trimethylaluminum (TMAl) is used as the aluminum source; and magnesium pyrocene (CP2Mg) is used as the P-type dopant.

[0138] It is worth noting that other equipment can also be used to fabricate the aforementioned semiconductor layer, and this disclosure does not limit this.

[0139] Figure 4 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 4 The first semiconductor layer 25, the active layer 24, and the second semiconductor layer 23 are sequentially stacked on the temporary substrate 70.

[0140] After the above fabrication is completed, the epitaxial layer can be cleaned in order to proceed with subsequent fabrication.

[0141] S22. A first bonding metal is fabricated on the driving substrate, and a second transparent conductive layer and a second bonding metal are sequentially fabricated on the epitaxial layer.

[0142] In this embodiment of the disclosure, the driving substrate can be a CMOS substrate.

[0143] In one example, the driving substrate may include a silicon substrate, multiple transistors, and multiple insulating dielectric layers.

[0144] The silicon substrate has a first surface and a second surface. Multiple transistors and a multilayer insulating dielectric layer are disposed on the second surface of the silicon substrate. The insulating dielectric layer covers the transistors. The multilayer insulating dielectric layer has multiple second vias and metal filling each second via. The multiple second vias correspond to multiple transistors, and the metal in the second vias connects to the corresponding transistors.

[0145] The transistors and second vias are periodically and regularly distributed, for example, in an array, with each period corresponding to one pixel of the light-emitting panel.

[0146] The driving substrate also includes a circuit structure for controlling and connecting transistors. By inputting signals through the circuit structure, the switching and current magnitude of the transistors are controlled, thereby controlling the switching and brightness of the light-emitting unit.

[0147] The first bonding metal and the second bonding metal are made of the same material, such as Ti, Pt, Au, Al or Sn.

[0148] For example, the second transparent conductive layer may be an ITO layer.

[0149] Figure 5 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 5 A first bonding metal 80 is formed on the driving substrate 10.

[0150] Figure 6 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 6 A second transparent conductive layer 22 and a second bonding metal 90 are sequentially formed on the second semiconductor layer 23.

[0151] S23. The epitaxial layer is bonded to the driving substrate by the first bonding metal on the driving substrate and the second bonding metal on the epitaxial layer.

[0152] Figure 7 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 7 The first bonding metal 80 and the second bonding metal 90 are bonded together to form a bonding metal layer 21.

[0153] S24. Remove the temporary substrate.

[0154] Figure 8 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 8 The temporary substrate 70 is removed, exposing the first semiconductor layer 25.

[0155] S25, Thinning the first semiconductor layer.

[0156] Figure 9 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 9 The first semiconductor layer is thinned by 25, and the remaining epitaxial layer has a thickness of 0.9 to 1.4 micrometers.

[0157] S26. A transparent contact layer is fabricated on the first semiconductor layer.

[0158] The transparent contact layer can be ITO, ohmic contact, highly doped GaN layer, AlGaN layer, etc.

[0159] Figure 10 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 10 A transparent contact layer 26 is formed on the first semiconductor layer 25.

[0160] S27. Perform the first patterning process on the transparent contact layer and the epitaxial layer.

[0161] Figure 11 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 11 The transparent contact layer 26, the first semiconductor layer 25, the active layer 24, and the second semiconductor layer 23 are etched to form a second-stage mesa structure.

[0162] S28. Perform a second patterning process on the second transparent conductive layer and the bonding metal layer to obtain the light-emitting unit.

[0163] In this embodiment of the disclosure, the processes for the first patterning process and the second patterning process can be different. For example, the first patterning process is inductively coupled plasma (ICP) etching, and the second patterning process can be reactive ion etching (RIE).

[0164] Figure 12 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 12 The second transparent conductive layer 22 and the bonding metal layer 21 are etched to form a first-level mesa structure. The first-level mesa structure and the second-level mesa structure constitute the aforementioned light-emitting unit 20.

[0165] S29. Make an insulating layer.

[0166] The insulating layer covers the plurality of light-emitting units and the driving substrate between the plurality of light-emitting units, and the insulating layer has a first through hole corresponding to each of the light-emitting units.

[0167] Figure 13 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 13 After the light-emitting unit 20 is fabricated, an insulating layer 50 is deposited first, and then the insulating layer 50 is etched to form multiple first through holes 51.

[0168] S30, Fabricate the first transparent conductive layer.

[0169] The first transparent conductive layer covers the insulating layer and is electrically connected to each of the light-emitting units through each of the first through holes.

[0170] In this embodiment of the disclosure, the first transparent conductive layer and the second transparent conductive layer can be formed by sputtering or evaporation processes.

[0171] Figure 14 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 14 After the insulating layer 50 is fabricated, a first transparent conductive layer 60 is fabricated to cover the insulating layer 50. The first transparent conductive layer 60 is electrically connected to the transparent contact layer 26 of each light-emitting unit 20 through multiple first through holes 51.

[0172] S31. Fabricate the electrode structure.

[0173] The electrode structure is a mesh metal wall structure with multiple cells, the multiple light-emitting units are respectively located in the multiple cells, the electrode structure is electrically connected to the other side of the multiple light-emitting units, and the electrode structure is electrically connected to the driving substrate.

[0174] In this embodiment, the first bonding metal, the second bonding metal, and the electrode structure can be formed by sputtering or evaporation processes.

[0175] In the process of fabricating the electrode structure, a patterned mask layer can be deposited first, exposing the area where the electrode needs to be formed. Then, sputtering or evaporation is performed, and finally the mask layer and the metal on the mask layer are removed, leaving the electrode structure.

[0176] Figure 15 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 15 A patterned electrode structure 30 is fabricated, with the bottom of the metal wall of the electrode structure 30 located within a groove in the first transparent conductive layer 60, which is positioned between adjacent light-emitting units 20.

[0177] S32. Construct a light-collecting structure.

[0178] The light-collecting structure covers the plurality of light-emitting units and the electrode structure, and the light-collecting structure has a plurality of protrusions arranged in an array.

[0179] In this embodiment, the light-collecting structure can be formed by a deposition process plus an etching process, which will not be described in detail.

[0180] Figure 16 This is a schematic diagram of the structure during the fabrication process of the light-emitting panel provided in this embodiment of the disclosure. See also... Figure 16 A graphic light-collecting structure 40 is created, and the top of the metal wall of the electrode structure 30 corresponds to the boundary between the two adjacent rings of protrusions 41.

[0181] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light-emitting panel, characterized in that, The light-emitting panel includes: a driving substrate (10), multiple light-emitting units (20), an electrode structure (30), and a light-collecting structure (40); The plurality of light-emitting units (20) are located on the driving substrate (10), and one side of each light-emitting unit (20) is electrically connected to the driving substrate (10); The electrode structure (30) is a mesh metal wall structure with multiple cells (31). The multiple light-emitting units (20) are respectively located in the multiple cells (31). The electrode structure (30) is electrically connected to the other side of the multiple light-emitting units (20). The electrode structure (30) is electrically connected to the driving substrate (10). The light-collecting structure (40) covers the plurality of light-emitting units (20) and the electrode structure (30), and the light-collecting structure (40) has a plurality of protrusions (41) arranged in an array.

2. The light-emitting panel according to claim 1, characterized in that, The protrusion (41) is conical, with a circular bottom and an outwardly convex arc surface on the sidewall.

3. The light-emitting panel according to claim 2, characterized in that, The light-collecting structure (40) further includes a leveling layer (42), which covers the plurality of light-emitting units (20) and the electrode structure (30) and fills the gap between the plurality of light-emitting units (20) and the electrode structure (30), and the plurality of protrusions (41) are located on the leveling layer (42).

4. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The material of the light-collecting structure (40) is PDMS, PMMA or silicon oxide.

5. The light-emitting panel according to any one of claims 1 to 3, characterized in that, Each of the light-emitting units (20) corresponds to a protrusion (41) on the other side, and each cell (31) where the light-emitting unit (20) is located corresponds to a circle of protrusions (41), and a circle of protrusions (41) surrounds a protrusion (41).

6. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The light-emitting panel further includes: an insulating layer (50) and a first transparent conductive layer (60); The insulating layer (50) covers the plurality of light-emitting units (20) and the driving substrate (10) between the plurality of light-emitting units (20); The insulating layer (50) has a first through hole (51) corresponding to each of the light-emitting units (20), and the first transparent conductive layer (60) covers the insulating layer (50) and is electrically connected to each of the light-emitting units (20) through each of the first through holes (51); The electrode structure (30) is located on the first transparent conductive layer (60) and is situated in the groove of the first transparent conductive layer (60) between each of the light-emitting units (20).

7. The light-emitting panel according to any one of claims 1 to 3, characterized in that, The light-emitting unit (20) includes: A bonding metal layer (21), a second transparent conductive layer (22), a second semiconductor layer (23), an active layer (24), and a first semiconductor layer (25) are sequentially stacked on the driving substrate (10).

8. The light-emitting panel according to claim 7, characterized in that, The distance between the side of the electrode structure (30) away from the driving substrate (10) and the driving substrate (10) is greater than the distance between the side of the active layer (24) away from the driving substrate (10) and the driving substrate (10). The distance between the side of the electrode structure (30) close to the driving substrate (10) and the driving substrate (10) is less than the distance between the side of the active layer (24) close to the driving substrate (10) and the driving substrate (10).

9. A method for preparing a light-emitting panel, characterized in that, The method includes: An epitaxial layer is fabricated on a temporary substrate; The epitaxial layer is bonded to the driving substrate; The epitaxial layer is patterned to obtain multiple light-emitting units, and one side of each light-emitting unit is electrically connected to the driving substrate. An electrode structure is fabricated, which is a mesh metal wall structure with multiple cells. The multiple light-emitting units are respectively located in the multiple cells. The electrode structure is electrically connected to the other side of the multiple light-emitting units and electrically connected to the driving substrate. A light-collecting structure is fabricated, which covers the plurality of light-emitting units and the electrode structure, and the light-collecting structure has a plurality of protrusions arranged in an array.

10. The method according to claim 9, characterized in that, The method further includes: After the epitaxial layer is patterned, an insulating layer is fabricated, which covers the plurality of light-emitting units and the driving substrate between the plurality of light-emitting units. The insulating layer has a first through-hole corresponding to each of the light-emitting units. A first transparent conductive layer is fabricated, which covers the insulating layer and is electrically connected to each of the light-emitting units through each of the first through holes. After the electrode structure is fabricated, the electrode structure is located on the first transparent conductive layer and in the groove of the first transparent conductive layer between each of the light-emitting units.

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