Solar cell and preparation method thereof, electric equipment and power generation equipment

Abstract

The invention discloses a solar cell and a preparation method thereof, electric equipment and power generation equipment, the solar cell at least comprises a first electrode layer, a light absorption layer and a second electrode, the light absorption layer comprises a perovskite material, the first electrode layer comprises a main body layer and a modification layer, the modification layer is located between the main body layer and the light absorption layer, the main body layer comprises metal, and the second electrode comprises metal. The modification layer has electrical conductivity, and the modification layer comprises one or more of metal nitrides and sulfides. The modification layer in the first electrode not only has conductivity, but also can prevent metal ions in the main body layer from diffusing to the light absorption layer, so that corrosion of the metal ions to a perovskite material in the light absorption layer is reduced, the effect of protecting the perovskite material is achieved, and degradation of the perovskite material is reduced; the interface bonding effect between the modification layer and the main body layer is strong, and the reliability of the first electrode layer in the solar cell device can be improved.

Description

Technical Field

[0001] This application relates to the field of new energy technology, and in particular to solar cells and their preparation methods, electrical equipment and power generation equipment. Background Technology

[0002] Solar cells, as a crucial technology in the field of new energy, have expanded from military and aerospace sectors into numerous industries, including manufacturing, commerce, agriculture, communications, home appliances, and public utilities. Perovskite solar cells are among the most promising and high-potential solar cells, characterized by high efficiency, environmental friendliness, and low cost. Metal substrates, with their high-temperature resistance, good electrical conductivity, and bending resistance, are widely used as metal electrodes in perovskite solar cells.

[0003] However, in perovskite solar cells, metal ions from the metal electrodes can diffuse into the perovskite light-absorbing layer, causing degradation of the perovskite. The above statements are for informational purposes only and do not necessarily constitute prior art. Summary of the Invention

[0004] The main technical problem addressed by this application is to provide a solar cell and its preparation method, electrical equipment, and power generation equipment that can hinder the diffusion of metal ions into the light-absorbing layer, protect perovskite materials, and reduce the degradation of perovskite materials.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a solar cell, the solar cell including at least a first electrode layer, a light-absorbing layer and a second electrode, the light-absorbing layer including a perovskite material, the first electrode layer including a host layer and a modification layer, the modification layer being located between the host layer and the light-absorbing layer, the host layer including a metal, the modification layer being conductive, and the modification layer including one or more of metal nitrides and sulfides.

[0006] The first electrode layer comprises a metal as its main layer, which has good electrical conductivity and bending resistance. Meanwhile, the modification layer comprises one or more of the metal nitrides and sulfides in the main layer. It not only has electrical conductivity but also hinders the diffusion of metal ions from the main layer to the light absorption layer, thereby reducing the corrosion of the perovskite material in the light absorption layer by metal ions, protecting the perovskite material, reducing its degradation, and improving the stability and photoelectric conversion efficiency of the solar cell.

[0007] Furthermore, the modification layer includes nitrides and sulfides of the metal in the host layer. Therefore, the interfacial bonding between the modification layer and the host layer is strong, which can improve the reliability of the first electrode layer in solar cell devices.

[0008] In one embodiment, the metal includes one or more of copper, molybdenum, and titanium. This metal is used as the main layer of the first electrode layer, possessing good charge-receiving ability and capable of combining with non-metallic elements such as nitrogen and sulfur to form a modifying layer, thereby protecting the perovskite material.

[0009] In one embodiment, the main layer comprises copper, and the decorative layer comprises copper nitride. Copper nitride not only has electrical conductivity but also hinders the diffusion of copper ions, thereby reducing corrosion of the perovskite material in the light-absorbing layer, protecting the perovskite material, and improving the stability of the solar cell.

[0010] In one embodiment, the thickness of the modification layer is 10 nm to 500 nm. A thickness within this range allows for a uniform and continuous distribution of the modification layer on the surface of the host layer, enabling the modification layer to provide good protection for the perovskite material while simultaneously reducing its impact on electrical resistance.

[0011] In one embodiment, the thickness of the modification layer is 10 nm to 100 nm. A thickness within this range allows for a uniform and continuous distribution on the surface of the host layer, enabling the modification layer to provide good protection for the perovskite material while further reducing its impact on electrical resistance.

[0012] In one embodiment, the thickness of the main layer is 3 μm to 100 μm. A main layer thickness within this range provides good charge acceptance capability and also improves the bending resistance of the solar cell device.

[0013] In one embodiment, the thickness of the main layer is 3 μm to 10 μm. A main layer thickness within this range provides good charge acceptance capability and also helps to further improve the bending resistance of the solar cell device.

[0014] In one embodiment, the sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 The sheet resistance of the first electrode layer is limited to less than or equal to 1 mΩ / m. 2 This can improve the conductivity of the first electrode layer and reduce the series resistance of the solar cell, which is beneficial to improving the photovoltaic performance of the solar cell.

[0015] In one embodiment, the sheet resistance of the first electrode layer is 0.2 mΩ / m 2 ~0.5mΩ / m 2 The sheet resistance of the first electrode layer is limited to 0.2 mΩ / m. 2 ~0.5mΩ / m 2 This can further improve the conductivity of the first electrode layer and reduce the series resistance of the solar cell, which is beneficial to further improve the photovoltaic performance of the solar cell.

[0016] In one embodiment, the work function of the modified layer is greater than the highest occupied molecular orbital (HOM) energy level of the perovskite material, while the work function of the modified layer is less than that of the host layer. The work function of the modified layer lies between that of the host layer and the HOM of the perovskite material, which is beneficial for hole extraction and transport in inverted solar cell devices.

[0017] In one embodiment, the solar cell further includes a substrate disposed on the side of the main layer away from the modifying layer, and the substrate comprises a flexural polymer. The substrate can improve the flexural resistance of the solar cell device to obtain a flexible solar cell device.

[0018] In one embodiment, the flexurally resistant polymer includes one or more of polyethylene terephthalate, polynaphthalenedimethylethylene ester, polyimide, and polydimethylsiloxane. When used as a base layer for a solar cell, this flexurally resistant polymer can improve the flexural resistance of the solar cell device, thereby obtaining a flexible solar cell device.

[0019] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a method for preparing a solar cell, comprising: providing a substrate, preparing a main layer of a first electrode layer on the substrate to obtain a semi-finished product, the main layer comprising a metal; generating a modification layer of the first electrode layer in situ on the surface of the main layer of the semi-finished product, the modification layer being conductive, the modification layer comprising one or more of metal nitrides and sulfides; preparing a light-absorbing layer on the surface of the modification layer, the light-absorbing layer comprising a perovskite material; and preparing a second electrode on the surface of the light-absorbing layer.

[0020] The first electrode layer comprises a metal as its main layer, which has good electrical conductivity and bending resistance. Meanwhile, the modification layer comprises one or more of the metal nitrides and sulfides in the main layer. It not only has electrical conductivity but also hinders the diffusion of metal ions from the main layer to the light absorption layer, thereby reducing the corrosion of the perovskite material in the light absorption layer by metal ions, protecting the perovskite material, reducing its degradation, and improving the stability and photoelectric conversion efficiency of the solar cell.

[0021] Furthermore, the modification layer includes nitrides and sulfides of the metal in the host layer. Therefore, the interfacial bonding between the modification layer and the host layer is strong, which can improve the reliability of the first electrode layer in solar cell devices.

[0022] In one embodiment, the metal includes one or more of copper, molybdenum, and titanium. This metal is used as the main layer of the first electrode layer, possessing good charge-receiving ability and capable of combining with non-metallic elements such as nitrogen and sulfur to form a modifying layer, thereby protecting the perovskite material.

[0023] In one embodiment, the modification layer for in-situ formation of the first electrode layer on the surface of the main body layer of the semi-finished product includes: adjusting the reaction atmosphere, which includes nitrogen, and magnetron sputtering the metal of the main body layer onto the surface of the main body layer of the semi-finished product to form the modification layer of the first electrode layer; or placing sulfur powder and anhydrous ethanol in a reaction vessel, placing the semi-finished product into the reaction vessel, and forming the modification layer of the first electrode on the surface of the main body layer of the semi-finished product by a hydrothermal method, wherein the temperature of the hydrothermal method is 60°C to 90°C and the time is 3h to 9h. This in-situ formation method helps to form a continuous interface with fewer defects, which is beneficial for further improving the interfacial bonding between the main body layer and the modification layer.

[0024] This application also provides an electrical device comprising a solar cell according to any of the above embodiments, and / or a solar cell prepared by a method for preparing a solar cell according to any of the above embodiments. The electrical device has at least the same advantages as a battery.

[0025] This application also provides a power generation device comprising a solar cell according to any of the above embodiments, and / or a solar cell prepared by a method for preparing a solar cell according to any of the above embodiments. The power generation device has at least the same advantages as a battery.

[0026] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of a solar cell according to one or more embodiments;

[0029] Figure 2 This is a schematic diagram of the structure of an electrical device according to some embodiments of this application;

[0030] Figure 3 This is a schematic diagram of the structure of a power generation device according to some embodiments of this application;

[0031] Figure 4 This is a comparison of the aging of perovskite films with different first electrode layer structures in this application.

[0032] In the attached image:

[0033] 100. Solar cell; 11. First electrode; 111. Main layer; 112. Modification layer; 13. Second electrode; 21. Hole transport layer; 23. Electron transport layer; 30. Light absorption layer; 1000. Electrical equipment; 2000. Power generation equipment. Detailed Implementation

[0034] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0036] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0037] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0038] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0039] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0040] Perovskite solar cells have become a promising type of solar cell and a hot research topic due to their outstanding advantages such as high photoelectric conversion efficiency, low cost, and simple fabrication. Perovskite solar cells can be applied to lunar rovers, satellite solar panels, various sensors, detectors, and consumer products such as wearable electronics and automotive power supplies, making them a potential power source for consumer products in many areas. With the continuous expansion of applications for perovskite solar cells and their flexible folding capabilities, market demand is constantly increasing.

[0041] In perovskite solar cells, metal substrates are widely used as metal electrodes due to their high temperature resistance, good electrical conductivity, and bending resistance. However, metal ions in the metal electrode can migrate to the perovskite light-absorbing layer and even react with the perovskite material. This process causes corrosion and performance degradation of the perovskite material by disrupting the chemical stability and electronic structure of the perovskite layer.

[0042] Currently, a common approach is to introduce transparent metal oxides such as indium tin oxide (ITO) or indium-doped zinc oxide (IZO) as a barrier layer between the metal electrode and the perovskite light-absorbing layer to hinder the diffusion of metal ions. However, this strategy is costly, and directly sputtering ITO (or IZO, etc.) onto the metal electrode makes it difficult for the ITO (or IZO, etc.) to adhere firmly to the metal electrode. For flexible solar cell devices, there is a risk of ITO (or IZO, etc.) film separation and detachment during use in bending scenarios.

[0043] In view of the above problems, this application provides a solar cell, which includes at least a first electrode layer, a light-absorbing layer and a second electrode. The light-absorbing layer includes a perovskite material. The first electrode layer includes a host layer and a modification layer. The modification layer is located between the host layer and the light-absorbing layer. The host layer includes a metal. The modification layer is conductive and includes one or more of metal nitrides and sulfides.

[0044] The light-absorbing layer absorbs light and directly converts light energy into electrical energy through the photoelectric effect or photochemical effect. The light-absorbing layer comprises perovskite materials, which have photoelectric conversion capabilities. They absorb photons from sunlight to generate excitation, exciting electrons in the valence band to produce photogenerated electron-hole pairs. These electron-hole pairs have low binding energy and easily dissociate under the influence of a built-in electric field, separating into free electrons and free holes, i.e., charge carriers.

[0045] The second electrode is a transparent conductive electrode with high conductivity and high visible light transmittance, serving to collect charge. In some embodiments, the material of the second electrode is a transparent conductive oxide material, including one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO).

[0046] The first electrode layer serves to collect free charges. In the above embodiment, the first electrode layer includes a main layer and a decorative layer. The main layer includes a metal, which is a good inorganic conductive material with good electrical conductivity and bending resistance, and is therefore suitable for flexible solar cell devices.

[0047] The modification layer is located between the main layer and the light absorption layer. This means that there may be no other functional layers between the modification layer and the light absorption layer, or there may be other functional layers.

[0048] In one embodiment, the modification layer is adjacent to the light-absorbing layer. In another embodiment, at least one of a carrier transport layer and a passivation layer is further included between the modification layer and the light-absorbing layer, wherein the carrier transport layer includes a hole transport layer or an electron transport layer.

[0049] The modification layer comprises one or more nitrides and sulfides of the metallic material in the host layer. The modification layer not only possesses good electrical conductivity, enabling charge transport, but also exhibits excellent thermal stability, resisting thermal decomposition. Furthermore, it hinders the diffusion of metal ions, thus functioning as a metal ion barrier layer. This reduces the corrosion of the perovskite material in the light-absorbing layer by metal ions, protecting the perovskite material, minimizing its degradation, and improving the stability and photoelectric conversion efficiency of the solar cell. Simultaneously, the modification layer also protects the host layer, enhancing the corrosion resistance of the first electrode layer itself.

[0050] Furthermore, since the modification layer is a nitride or sulfide of the metal in the main layer, the main layer and the modification layer have a natural chemical affinity, and the interface between the two has a low energy, so the interface is relatively stable and the interfacial bonding is strong. It is not easy to separate or fall off when the solar cell device is bent, which can improve the reliability of the first electrode layer in the solar cell device, especially in flexible solar cell devices.

[0051] In one embodiment, a modification layer is generated in situ on the surface of the host layer. The in-situ generation method is a materials synthesis technique whose core concept is to generate the desired substance or structure directly at the final use location or within the reaction system during a specific chemical reaction or synthesis process.

[0052] In one embodiment, the modification layer is formed in situ on the surface of the substrate layer by magnetron sputtering. In another embodiment, the modification layer is formed in situ on the surface of the substrate layer by a hydrothermal method.

[0053] The in-situ generation method is simple in process and has high production efficiency. It helps to form a continuous interface with fewer defects, which is beneficial to further improve the interface bonding between the main layer and the decoration layer.

[0054] In one embodiment, the metal includes one or more of copper (Cu), molybdenum (Mo), and titanium (Ti). This metal is used as the main layer of the first electrode layer, possessing good charge-receiving ability and capable of combining with non-metallic elements such as nitrogen and sulfur to form a modifying layer, thereby protecting the perovskite material.

[0055] In one embodiment, the host layer comprises copper, and the modification layer comprises copper nitride.

[0056] Copper is an excellent electrical conductor with high conductivity, as well as good chemical and thermal stability, and it is not easily corroded, making it suitable as an electrode material. Copper nitride also has good conductivity, enabling charge transport. Copper nitride forms a dense film on the copper surface, which acts as a physical barrier, hindering the diffusion of copper ions. This reduces corrosion of the perovskite material in the light-absorbing layer, protecting the perovskite material, reducing its degradation, and improving the stability of the solar cell.

[0057] In one embodiment, the thickness of the modification layer is 10nm to 500nm. For example, it can be 10nm, 30nm, 50nm, 80nm, 100nm, 120nm, 200nm, 300nm, 350nm, 400nm, 500nm, etc., or a range composed of any two of the above parameters, such as 10nm to 30nm, 50nm to 80nm, 100nm to 120nm, 300nm to 350nm, 400nm to 500nm, etc.

[0058] When the thickness of the modification layer is less than 500 nm, the influence of the modification layer on the resistance can be reduced, resulting in a smaller resistance of the first electrode layer, higher carrier transport efficiency, and lower cost of the modification layer preparation. Meanwhile, when the thickness of the modification layer is greater than 10 nm, it can be uniformly and continuously distributed on the surface of the main layer, achieving a good protective effect on the perovskite material.

[0059] In one embodiment, the thickness of the modification layer is 10nm to 100nm. For example, it can be 10nm, 30nm, 50nm, 55nm, 73nm, 80nm, 90nm, 96nm, 100nm, etc., or a range composed of any two of the above parameters, such as 10nm to 30nm, 50nm to 55nm, 73nm to 80nm, 90nm to 100nm, etc.

[0060] The thickness of the modification layer is within the above range, and it can be uniformly and continuously distributed on the surface of the main layer, so that the modification layer can achieve a good protective effect on the perovskite material, and at the same time, it can further reduce the influence of the modification layer on the resistance.

[0061] In one embodiment, the thickness of the main layer is 3μm to 100μm. For example, it can be 3μm, 5μm, 10μm, 20μm, 28μm, 36μm, 50μm, 75μm, 80μm, 90μm, 100μm, etc., or a range composed of any two of the above parameters, such as 3μm to 10μm, 20μm to 28μm, 36μm to 50μm, 75μm to 80μm, 90μm to 100μm, etc.

[0062] Increasing the thickness of the main layer typically reduces its flexibility. A thicker main layer is more prone to cracking or breakage when subjected to bending or folding, thus affecting the mechanical stability and lifespan of the first electrode layer, and consequently impacting the bending resistance of the solar cell device. A main layer thickness within the aforementioned range provides good charge acceptance and also contributes to improving the bending resistance of flexible solar cell devices.

[0063] In one embodiment, the thickness of the main layer is 3μm to 10μm. For example, it can be 3μm, 4μm, 4.5μm, 5μm, 6μm, 7μm, 8.6μm, 9.4μm, 10μm, etc., or a range composed of any two of the above parameters, such as 3μm to 4μm, 4.5μm to 6μm, 7μm to 8.6μm, 9.4μm to 10μm, etc.

[0064] The thickness of the main layer is within the above range, which has good charge receiving ability and is also conducive to further improving the bending mechanical properties of flexible solar cell devices.

[0065] In one embodiment, the sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 For example, it could be 0.2mΩ / m 2 0.3mΩ / m 2 0.35mΩ / m 2 0.5mΩ / m 2 0.7mΩ / m 20.85mΩ / m 2 1mΩ / m 2 etc., or a range consisting of any two of the above parameters, for example, 0.2mΩ / m 2 ~0.3mΩ / m 2 0.35mΩ / m 2 ~0.5mΩ / m 2 0.85mΩ / m 2 ~1mΩ / m 2 wait.

[0066] Sheet resistance is a parameter describing the resistive properties of a thin film or sheet material; it refers to the resistance per unit length and unit width on a film or sheet material of a specific length and width. Sheet resistance testing employs a four-probe method, where four probes are arranged in an orderly fashion and contact the sample surface. By applying voltage or current, the voltage or current drop across the material is measured, thereby calculating the resistivity and sheet resistance. Lower sheet resistance indicates higher charge transport efficiency in the electrode material. The existing barrier layers (ITO and IZO) used to impede the diffusion of metal ions, as described above, typically have a sheet resistance of 7 mΩ / m. 2 above.

[0067] Therefore, the sheet resistance of the first electrode layer is limited to less than or equal to 1 mΩ / m. 2 This can improve the conductivity of the first electrode layer and reduce the series resistance of the solar cell, which is beneficial to improving the photovoltaic performance of the solar cell.

[0068] In one embodiment, the sheet resistance of the first electrode layer is 0.2 mΩ / m 2 ~0.5mΩ / m 2 For example, it could be 0.2mΩ / m 2 0.25mΩ / m 2 0.33mΩ / m 2 0.38mΩ / m 2 0.4mΩ / m 2 0.45mΩ / m 2 0.5mΩ / m 2 etc., or a range consisting of any two of the above parameters, for example, 0.2mΩ / m 2 ~0.25mΩ / m 2 0.33mΩ / m 2 ~0.38mΩ / m 2 0.4mΩ / m 2 ~0.5mΩ / m 2 This allows for further improvement in the conductivity of the first electrode layer and a reduction in the series resistance of the solar cell, which is beneficial for further enhancing the photovoltaic performance of the solar cell.

[0069] In one embodiment, the work function of the modified layer is greater than the highest occupied molecular orbital energy level of the perovskite material, while the work function of the modified layer is less than the work function of the host layer.

[0070] The work function refers to the energy required to move an electron from the interior of a material to its surface and eventually into a vacuum. It represents the energy consumption process and is therefore represented by a positive value. The highest occupied molecular orbital level (HOMO level) is the highest-energy orbital occupied by an electron in a molecule; it is a reference value relative to the vacuum level and is therefore represented by a negative value. Due to the different representations, when comparing the work function and the HOMO level, the work function must also be converted to a reference value relative to the vacuum level. For example, when the work function is 4.6 eV, its reference value relative to the vacuum level is -4.6 eV. In inverted solar cells, when the HOMO level of the perovskite material is lower than the work function of the metal electrode, holes can be more easily injected from the perovskite layer into the metal electrode, resulting in effective hole extraction. Therefore, in the above embodiment, the work function of the modification layer lies between the work function of the main layer and the HOMO level of the perovskite material. This energy level arrangement is beneficial for hole extraction and transport in inverted solar cell devices.

[0071] In one embodiment, the host layer comprises copper with a work function ranging from 4.6 eV to 4.7 eV, the modification layer comprises copper nitride with a work function ranging from 4.9 eV to 5.1 eV, and the highest occupied molecular orbital (HOMO) energy level of the perovskite material ranges from -5.2 eV to -5.5 eV.

[0072] At this point, the work function of copper nitride lies between that of copper and the HOMO level of perovskite materials. This energy level arrangement is beneficial for hole extraction and transport in inverted solar cell devices.

[0073] In one embodiment, the solar cell further includes a substrate disposed on the side of the main layer away from the modifying layer, and the substrate comprises a flexural polymer. The substrate can improve the flexural resistance of the solar cell device to obtain a flexible solar cell device.

[0074] Flexural strength refers to a material's ability to resist crack formation and propagation when repeatedly folded or bent. The substrate of a solar cell includes a flexurally strong polymer, thus also possessing flexural strength. The use of the substrate provides a carrier for the first electrode layer, allowing for a further reduction in the thickness of the main layer within the first electrode layer, thereby improving the flexural strength of the solar cell device.

[0075] In one embodiment, the flexurally resistant polymer includes one or more of polyethylene terephthalate (PET), polynaphthalene dimethyl ethylene ester (PEN), polyimide (PI), and polydimethylsiloxane (PDMS). These polymer materials all possess good flexural resistance, thus improving the flexural resistance of solar cell devices to obtain flexible solar cell devices.

[0076] Please see Figure 1 , Figure 1 This is a schematic diagram of a solar cell according to one or more embodiments. The solar cell 100 includes a substrate (not shown), a first electrode layer 11, a hole transport layer 21, a light absorption layer 30, an electron transport layer 23, and a second electrode 13, which are sequentially stacked. The first electrode layer 11 includes a main layer 111 and a modification layer 112, and the light absorption layer 30 includes a perovskite material.

[0077] The substrate includes a bend-resistant polymer that improves the bend resistance of the solar cell device. In one embodiment, the bend-resistant polymer includes one or more of polyethylene terephthalate (PET), polynaphthalene dimethyl ethylene ester (PEN), polyimide (PI), and polydimethylsiloxane (PDMS). In some embodiments, the substrate may not be provided.

[0078] The first electrode layer 11 serves to collect free charges. Within the first electrode layer 11, the main layer 111 comprises a metal, exhibiting good conductivity and bending resistance; the modification layer 112 comprises one or more nitrides and sulfides of the metal material in the main layer. The modification layer 112 not only possesses conductivity but also protects the perovskite material, reducing its degradation. The thickness of the main layer 111 is 3 μm to 100 μm, and the thickness of the modification layer 112 is 10 nm to 500 nm.

[0079] Hole transport layer 21 is used to transport free holes to the corresponding electrodes.

[0080] In some embodiments, the material of the hole transport layer 21 includes one or more of the following: metal oxide materials, polymer materials, organic small molecule self-assembled molecular materials and their derivatives, and materials obtained by doping or passivation thereof. For example, but not limited to, metal oxide materials, such as nickel oxide (NiO). x2 (1≤x2≤1.5), molybdenum oxide (MoO) x3 ,2.5≤x3≤3), Tungsten oxide (WO3) x4The hole transport layer 21 has a thickness of 0.5 nm to 50 nm. Materials include polymers such as poly(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA) and poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid) (PEDOT:PSS); and small organic self-assembled molecular materials such as carbazole or triphenylamine materials containing phosphate or carboxylic acid groups.

[0081] It should be noted that in some embodiments, the solar cell 100 may not include the hole transport layer 21.

[0082] The electron transport layer 23 is used to efficiently transport free electrons generated by the light absorption layer.

[0083] In some embodiments, the material of the electron transport layer 23 includes at least one of imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, semiconductor material oxides, titanates, fluorides and their derivatives, and materials obtained by doping or passivation. Imide compounds include at least one of perylene imide and its derivatives, naphthylimide and its derivatives, phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Quinone compounds include at least one of benzoquinone, naphthylquinone, phenanthrenequinone, or anthraquinone. Fullerenes and their derivatives include [6,6]-phenylC 61 Methyl butyrate (PC) 61 BM), [6,6]-phenyl C 71 methyl butyrate (PC) 71 BM), Fullerene C 60 (C 60 ), fullerene C 70 (C 70 At least one of the following: (e.g., magnesium, cadmium, zinc, indium, lead, tungsten, antimony, bismuth, mercury, titanium, silver, manganese, iron, vanadium, tin, zirconium, strontium, gallium, and chromium). The metal oxide includes at least one of the following: magnesium (Mg), cadmium (Cd), zinc (Zn), indium (In), lead (Pb), tungsten (W), antimony (Sb), bismuth (Bi), mercury (Hg), titanium (Ti), silver (Ag), manganese (Mn), iron (Fe), vanadium (V), tin (Sn), zirconium (Zr), strontium (Sr), gallium (Ga), and chromium (Cr). The semiconductor material oxide includes silicon oxide. The titanate includes at least one of strontium titanate and calcium titanate. The fluoride includes at least one of lithium fluoride and calcium fluoride. The thickness of the electron transport layer 23 is 5 nm to 100 nm.

[0084] It should be noted that in some embodiments, the solar cell 100 may not include the electron transport layer 23.

[0085] The light-absorbing layer 30 is used to absorb light and directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. The light-absorbing layer 30 includes a light-absorbing material with photoelectric conversion function. The light-absorbing material absorbs photons from sunlight to generate excitation, which in turn excites electrons in the valence band to generate photogenerated electron-hole pairs. The binding energy of electron-hole pairs is small, and they are easily dissociated under the influence of the built-in electric field, thus separating into free electrons and free holes, i.e., charge carriers.

[0086] In some embodiments, the material of the light-absorbing layer 30 includes perovskite. The chemical composition of the perovskite includes any one of ABX3 or A2CDX6, wherein A is any one of inorganic cations, organic cations, or mixed organic-inorganic cations, and may be methylammonium ion (CH3NH3). + MA + ), n-Butammonium ion (HC(NH2)2) + FA + ), cesium ions (Cs) + At least one of the following: B is a divalent cation, which can be lead ion (Pb). 2+ ), tin ions (Sn) 2+ At least one of the following: C is a monovalent cation, which can be silver ion (Ag) + D is a trivalent cation, which can be a bismuth cation (Bi). 3+ ), antimony cation (Sb) 3+ Indium cations (In) 3 + At least one of the following: X is a monovalent anion, such as a halide anion or a halide-like anion, which can be a chloride ion (Cl... - ), bromide ions (Br) - ) or iodide ions (I - At least one of the following. The thickness of the light-absorbing layer is 200 nm to 1000 nm.

[0087] The second electrode 13 is a transparent conductive electrode with high conductivity and high visible light transmittance, serving to collect charge. In some embodiments, the material of the second electrode 13 is a transparent conductive oxide material, including any one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO). The thickness of the second electrode is 10 nm to 1000 nm.

[0088] This application also provides a method for preparing a solar cell, comprising: providing a substrate; preparing a main layer of a first electrode layer on the substrate to obtain a semi-finished product, the main layer comprising a metal; generating a modification layer of the first electrode layer in situ on the surface of the main layer of the semi-finished product, the modification layer being conductive, the modification layer comprising one or more metal nitrides and sulfides; preparing a light-absorbing layer on the surface of the modification layer, the light-absorbing layer comprising a perovskite material; and preparing a second electrode on the surface of the light-absorbing layer.

[0089] In one embodiment, the metal includes one or more of copper, molybdenum, and titanium.

[0090] Methods for preparing the host layer include, but are not limited to, magnetron sputtering and physical vapor deposition (PVD). Magnetron sputtering involves applying a magnetic field to a metal target in a vacuum, causing atoms or molecules on the target surface to be sputtered out and forming a host layer thin film on the substrate. The thickness of the host layer can be controlled by adjusting the reaction time of the magnetron sputtering process. Thin films prepared using this method exhibit high purity, high uniformity, and good adhesion, making them suitable for preparing metal electrodes for solar cells. Physical vapor deposition (PVD) involves converting the material from a gaseous state to a solid state and directly depositing it onto the substrate surface to form a thin film. PVD technology is beneficial for improving the purity, uniformity, adhesion, and density of thin films and is suitable for preparing thin films from various materials, including metals. It also allows for relatively precise control over the composition and thickness of the thin film.

[0091] In one embodiment, the modification layer for forming a first electrode layer in situ on the surface of the main body layer of the semi-finished product includes: adjusting the reaction atmosphere, the reaction atmosphere including nitrogen, and magnetron sputtering the metal of the main body layer on the surface of the main body layer of the semi-finished product to form the modification layer of the first electrode layer.

[0092] For example, taking copper foil as the main layer and copper nitride as the modification layer, the modification layer for generating the first electrode layer in situ on the surface of the main layer includes the following steps: after placing the sputtered base film of the prepared copper foil main layer into the chamber, the vacuum is evacuated to 1×10 -4 The sputtering process begins with argon gas pre-sputtering for 5 minutes to clean the target surface, followed by nitrogen gas. The total sputtering pressure is controlled at 2 Pa, with a nitrogen-argon ratio of 2:1. The sputtering power is controlled at 80-120 W. A 99.999% high-purity copper target is used, with a target-to-base film distance of 10-20 cm. High-purity nitrogen and argon are used as sputtering gases, controlled separately using mass flow meters. The copper nitride film thickness is controlled by adjusting the reaction time; a 50 nm thick copper nitride film can be obtained after approximately 40 minutes of sputtering.

[0093] In another embodiment, the modification layer for forming the first electrode layer in situ on the surface of the main layer includes: placing sulfur powder and anhydrous ethanol in a reaction vessel, placing the semi-finished product in the reaction vessel, and forming the modification layer of the first electrode on the surface of the main layer of the semi-finished product by a hydrothermal method. The temperature of the hydrothermal method is 60℃~90℃, and the time is 3h~9h. The temperature of the hydrothermal method can be 60℃, 70℃, 75℃, 80℃, 90℃, etc., or any range of any two of the above values, such as 60℃~70℃, 75℃~80℃, 75℃~90℃, etc.; the time can be 3h, 4h, 6h, 8h, 8.5h, 9h, etc., or any range of any two of the above values, such as 3h~4h, 6h~8h, 8.5h~9h, etc.

[0094] For example, taking copper foil as the main layer and copper sulfide as the modification layer, the modification layer for generating the first electrode layer in situ on the surface of the main layer includes the following steps: placing sulfur powder and anhydrous ethanol in a hydrothermal reactor; placing the semi-finished product of the prepared copper foil main layer into the hydrothermal reactor, maintaining the temperature at 60℃~90℃, reacting for 3h~9h, taking it out, rinsing it with anhydrous ethanol and deionized water, and drying it to obtain the copper sulfide modification layer.

[0095] The modification layer is generated directly on the surface of the host layer, which helps to form a continuous interface with fewer defects, improves the interfacial bonding between the host layer and the modification layer, and the thickness of the modification layer can be controlled by the reaction time of magnetron sputtering.

[0096] The light-absorbing layer can be prepared on the surface of the modification layer by methods such as spin coating, blade coating, slot coating, vapor deposition, spraying, inkjet printing, and soft overlay deposition to form a perovskite thin film on the substrate structure.

[0097] In one embodiment, the preparation of the light-absorbing layer also includes a heat treatment process, which involves placing the coated perovskite film in a high-temperature furnace or hot plate for heat treatment (also known as annealing), typically at a temperature between 80°C and 150°C. Heat treatment can promote the crystallization and growth of perovskite crystals, regulate the morphology of the perovskite crystals, help reduce defects and improve photoelectric conversion efficiency; it also helps to thoroughly remove residual organic matter and solvents, improving the purity of the film.

[0098] In one embodiment, the solar cell further includes a hole transport layer and / or an electron transport layer; the hole transport layer is located between the first electrode layer and the light absorption layer, and the electron transport layer is located between the second electrode and the light absorption layer. The hole transport layer and the electron transport layer can respectively extract and transport the holes and electrons generated after the light absorption layer is excited by photons to the corresponding electrode layers, thereby improving carrier transport efficiency.

[0099] In the solar cell prepared by the above method, the main layer of the first electrode layer comprises a metal, possessing good electrical conductivity and bending resistance. Simultaneously, the modification layer comprises at least one of the metal nitrides and sulfides in the main layer. This modification layer not only possesses electrical conductivity, enabling charge transport, but also exhibits good thermal stability, resisting thermal decomposition and hindering the diffusion of metal ions. Therefore, the modification layer also functions as a metal ion barrier, reducing the corrosion of the perovskite material in the light-absorbing layer by metal ions, protecting the perovskite material, reducing its degradation, and improving the stability and photoelectric conversion efficiency of the solar cell. Furthermore, the modification layer also protects the main layer, enhancing the corrosion resistance of the first electrode layer itself.

[0100] Furthermore, since the modification layer is a nitride or sulfide of the metal in the main layer, the main layer and the modification layer have a natural chemical affinity, and the interface between the two has a low energy, so the interface is relatively stable and the interfacial bonding is strong. It is not easy to separate or fall off when the solar cell device is bent, which can improve the reliability of the first electrode layer in the solar cell device, especially in flexible solar cell devices.

[0101] Please see Figure 2 This application also provides an electrical device 1000, including the solar cell 100 described above or the solar cell prepared by the above-described method for preparing perovskite solar cells.

[0102] In this application, a solar cell serves as the power source for the aforementioned electrical device 1000; alternatively, the solar cell can serve as an energy storage unit for the aforementioned electrical device 1000. As an example, the electrical device 1000 can be a lighting element, a display element, or an automobile, etc.

[0103] See Figure 3 This application also provides a power generation device 2000, including the aforementioned solar cell 100 or a perovskite solar cell prepared by the aforementioned method. The power generation device 2000 can be used to generate electricity.

[0104] The beneficial effects of this application are further illustrated below with reference to the embodiments.

[0105] To make the technical problems, technical solutions, and beneficial effects solved by the embodiments of this application clearer, the following will provide a more detailed description in conjunction with the embodiments and accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its applications. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0106] I. Fabrication of Perovskite Solar Cell Devices:

[0107] Example 1:

[0108] (1) Fabrication of the first electrode layer

[0109] In a vacuum environment, a 50 μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality and enhance the adhesion between the substrate and the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen with a volume ratio of 8:2, and the treatment time was 3 min. Then, a 10 μm thick copper metal host layer was deposited on the PET substrate surface using physical vapor deposition (PVD) for 5 min.

[0110] Subsequently, the sputtered base film of the prepared copper metal host layer was placed in the magnetron sputtering chamber, and the vacuum was evacuated to 1×10⁻⁶. - 4 The sputtering process involved pre-sputtering with argon gas for 5 minutes to clean the target surface, followed by nitrogen gas. The total sputtering pressure was controlled at 2 Pa, with a nitrogen-to-argon ratio of 2:1, and the sputtering power was controlled at 100 W. The sputtering target was a 99.999% high-purity copper target, with a distance of 15 cm between the target and the base film. High-purity nitrogen and argon were used as sputtering gases, controlled separately using mass flow meters. The thickness of the copper nitride film was controlled by adjusting the reaction time. A 100 nm thick copper nitride modified layer could be obtained by sputtering for approximately 80 minutes. The copper metal substrate layer and the copper nitride modified layer constituted the first electrode layer.

[0111] (2) Preparation of NiO hole transport layer

[0112] In this embodiment, nickel oxide (NiO) was used as the hole transport layer material. Before the experiment, an aqueous dispersion of nickel oxide nanoparticles with a concentration of 20 mg / mL was prepared. Then, the cleaned first electrode layer was treated with ultraviolet ozone (UVO) for 15 min to enhance the subsequent bonding of NiO. Subsequently, a NiO hole transport layer (30 nm thick) was prepared on the first electrode layer.

[0113] (3)Cs 0.05 FA 0.95Preparation of PbI3 perovskite layer

[0114] A 1.5 mol / L concentration of Cs was dropped onto the surface of a substrate already coated with a hole transport layer. 0.05 FA 0.95 The PbI3 perovskite precursor solution was used for spin coating at 4000 rpm for 30 seconds. After spin coating, it was transferred to a hot plate at 100°C for annealing and crystallization for 10 minutes to obtain a uniform and dense perovskite film with a thickness of 500 nm.

[0115] (4)C 60 Fabrication of electron transport layer and BCP blocking layer

[0116] The devices coated with the perovskite layer were transferred to the evaporation chamber, C 60 Place the container in the evaporation boat and close the door. Evacuate to a vacuum level of 10. -4 Pa, with Evaporation speed of 20nm C 60 Electron transport layer; subsequently, BCP (Bath Copper Fiber) was placed in the evaporation boat, to... The 8nm BCP barrier layer is evaporated at a speed of [missing information].

[0117] (5) Preparation of the second electrode

[0118] The device with the electron transport layer and barrier layer prepared above is placed in a photomask, transferred to a PVD chamber, the chamber door is closed, and an ITO layer with a thickness of 100 nm is sputtered.

[0119] Examples 2-3:

[0120] The difference from Example 1 lies in the sputtering time for preparing the copper nitride modified layer in step (1). In Example 2, a copper nitride modified layer with a thickness of 10 nm was obtained by sputtering for about 8 minutes, while in Example 3, a copper nitride modified layer with a thickness of 500 nm was obtained by sputtering for about 400 minutes. The other steps are the same as in Example 1 and will not be described again here.

[0121] Examples 4-5:

[0122] The difference from Example 1 lies in step (1) the preparation of the first electrode layer, specifically:

[0123] Example 4: In a vacuum environment, a 50 μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality of the substrate and enhance the adhesion between the substrate and the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen with a volume ratio of 8:2, and the treatment time was 3 min. Then, a 10 μm thick copper metal host layer was deposited on the surface of the PET substrate using physical vapor deposition (PVD).

[0124] Sulfur powder and anhydrous ethanol were placed in a hydrothermal reactor. The base film of the prepared copper metal host layer was placed in the hydrothermal reactor and the temperature was maintained at 60°C for 3 hours. The film was then removed, rinsed with anhydrous ethanol and deionized water, and dried to obtain a copper sulfide modified layer with a thickness of 100 nm. The copper metal host layer and the copper sulfide modified layer constitute the first electrode layer.

[0125] Example 5: In a vacuum environment, a 50 μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality of the substrate and enhance the adhesion between the substrate and the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen with a volume ratio of 8:2, and the treatment time was 3 min. Then, a 10 μm thick titanium metal host layer was deposited on the surface of the PET substrate using physical vapor deposition (PVD).

[0126] Subsequently, the sputtered base film of the prepared titanium metal host layer was placed in the magnetron sputtering chamber, and the vacuum was evacuated to 1×10⁻⁶. - 4 The sputtering process involved pre-sputtering with argon gas for 5 minutes to clean the target surface, followed by nitrogen gas. The total sputtering pressure was controlled at 2 Pa, with a nitrogen-to-argon ratio of 2:1 and a sputtering power of 100 W. The sputtering target was a 99.999% high-purity titanium target, with a distance of 15 cm between the target and the base film. High-purity nitrogen and argon gases were used for sputtering, controlled separately using mass flow meters. The titanium nitride film thickness was controlled by adjusting the reaction time. A 100 nm thick titanium nitride modified layer was obtained after approximately 80 minutes of sputtering. The titanium metal substrate layer and the titanium nitride modified layer constituted the first electrode layer.

[0127] The other steps are the same as in Example 1, and will not be described again here.

[0128] Examples 6-7:

[0129] The difference from Example 1 lies in the parameters of the PVD process in step (1). In Example 6, a 3 μm thick copper metal host layer was obtained by depositing a PVD process on the surface of a PET substrate for 1.5 min. In Example 7, a 100 μm thick copper metal host layer was obtained by depositing a PVD process on the surface of a PET substrate for 50 min. The other steps are the same as in Example 1 and will not be described again here.

[0130] Comparative Example 1:

[0131] Compared with Example 1, there is no modification layer, and the other steps are the same as in Example 1, which will not be described again here.

[0132] Comparative Example 2:

[0133] The difference from Example 1 is that the modification layer is changed from copper nitride to indium tin oxide (ITO), and step (1) is as follows:

[0134] In a vacuum environment, a 50 μm thick PET polymer film substrate was subjected to plasma pretreatment to improve the surface quality and enhance the adhesion between the substrate and the metal coating. The plasma treatment atmosphere was a mixture of argon and oxygen with a volume ratio of 8:2, and the treatment time was 3 min. Then, a 10 μm thick copper metal host layer was deposited on the PET substrate surface using physical vapor deposition (PVD) for 5 min.

[0135] The sputtered base film of the prepared copper metal host layer was placed in the cavity of the magnetron sputtering equipment at a vacuum degree of 1×10⁻⁶. -5 Pa~2×10 -1 Under vacuum conditions of Pa, using argon and oxygen as process gases, and indium tin oxide (ITO) as the target material (ITO with a mass content of 90%), a magnetron sputtering deposition of an ITO thin film was performed on the substrate using an RF power supply, controlling the substrate temperature at 25°C. The argon flow rate was 20 sccm, and the oxygen flow rate was 0.36 sccm. The ITO thickness was 100 nm. A copper metal substrate layer and an ITO modification layer constituted the first electrode layer.

[0136] The other steps are the same as in Example 1, and will not be described again here.

[0137] II. Performance Characterization of Perovskite Solar Cell Devices:

[0138] 1. Ion diffusion test

[0139] Hole transport layers and perovskite layers were sequentially prepared on the first electrode layer (Cu) of Comparative Example 1, the first electrode layer (Cu host layer / ITO modified layer) of Comparative Example 2, and the first electrode layer (Cu host layer / CuN modified layer) of Example 1, respectively (refer to Comparative Example 1, Comparative Example 2, and Example 1, respectively). The three films were then placed on a hot stage at 120°C for 5 hours under ambient humidity greater than 35% RH (relative humidity). Surface changes of the perovskite films were observed. (See [reference needed]). Figure 4 , Figure 4 This is a comparison of the aging of perovskite films with different first electrode layer structures in this application.

[0140] Figure 4 Among them, the perovskite film with Cu as the first electrode layer showed the most obvious aging, while the perovskite films with Cu as the first electrode layer / ITO modified layer and Cu as the first electrode layer / CuN modified layer showed basically no change.

[0141] 2. Bending performance test

[0142] By adjusting the sensor position of the bending tester, the bending radius was set to 20 mm. The samples (Example 1 and Comparative Example 2) were fixed on the clamping platform and clamped in place. The bending frequency was set to 3 bending cycles per second, and the number of bends was set to 1000. The bending operation mode adopted a single-sided slide rail. The bending resistance was evaluated by testing the change in sheet resistance after bending.

[0143] 3. Photoelectric performance testing

[0144] Under standard simulated sunlight (AM 1.5G, 100mW / cm²) 2 The battery performance was tested under irradiation conditions, with test voltages ranging from -0.1V to 1.2V, and the battery area was 0.075cm². 2 Obtain the IV curve. Based on the IV curve and the data fed back from the testing equipment, the short-circuit current J can be obtained. sc (Unit: mA / cm) 2 ), Open circuit voltage V oc (unit: V), maximum light output current (J) mpp (unit mA) and maximum light output voltage V mpp (Unit: V). Using the formula FF = J sc ×V oc / (J mpp ×V mpp Calculate the battery fill factor FF, in %. Use the formula PCE = J sc ×V oc ×FF / P w Calculate the photoelectric conversion efficiency (PCE) of the battery, in %; P w This indicates the input power, measured in mW.

[0145] The test results are shown in Tables 1 and 2.

[0146] Table 1 Test parameters for each embodiment and comparative example

[0147]

[0148] Note: The samples in Examples 1-7 and Comparative Examples 1-2 were bent 1000 times.

[0149] Table 2. Photovoltaic performance test table for three types of solar cells.

[0150]

[0151] III. Analysis of Performance Test Results of Perovskite Solar Cell Devices

[0152] 1. According to the performance test results in Table 1, compared with the solar cell device in Comparative Example 2 whose modification layer uses ITO in the prior art, the sheet resistance of the first electrode layer of the solar cell device provided in Examples 1-7 of this application is significantly smaller before bending. At the same time, the sheet resistance of the first electrode layer is still small after bending 1000 times. This indicates that the first electrode layer of the solar cell device provided in this application has good conductivity and bending resistance, which is beneficial to improving the conductivity and reliability of the solar cell device, thereby improving the stability of the solar cell device.

[0153] 2. According to the photoelectric performance test results of the solar cells in Table 2, the photoelectric conversion efficiency of the solar cell device in Example 1 is better than that of Comparative Example 1 without modification layer and Comparative Example 2 with conventional ITO modification layer. This is because the copper nitride modification layer provided in this application has an energy level modification effect, and the first electrode layer composed of copper host layer and copper nitride modification layer has good conductivity, thus improving the photoelectric conversion efficiency of solar cell.

[0154] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A solar cell, characterized in that, It includes at least a first electrode layer, a light-absorbing layer, and a second electrode. The light-absorbing layer includes a perovskite material. The first electrode layer includes a host layer and a modification layer. The modification layer is located between the host layer and the light-absorbing layer. The host layer includes a metal. The modification layer is conductive and includes one or more of the metal's nitrides and sulfides.

2. The solar cell as described in claim 1, characterized in that, The metal includes one or more of copper, molybdenum, and titanium.

3. The solar cell as described in claim 1 or 2, characterized in that, The host layer comprises copper, and the modification layer comprises copper nitride.

4. The solar cell according to any one of claims 1 to 3, characterized in that, The thickness of the modified layer is 10 nm to 500 nm.

5. The solar cell as described in claim 4, characterized in that, The thickness of the modified layer is 10 nm to 100 nm.

6. The solar cell according to any one of claims 1 to 5, characterized in that, The thickness of the main body layer is 3μm to 100μm.

7. The solar cell as claimed in claim 6, characterized in that, The thickness of the main body layer is 3μm to 10μm.

8. The solar cell according to any one of claims 1 to 7, characterized in that, The sheet resistance of the first electrode layer is less than or equal to 1 mΩ / m 2 .

9. The solar cell as claimed in claim 8, characterized in that, The sheet resistance of the first electrode layer is 0.2 mΩ / m 2 ~0.5mΩ / m 2 .

10. The solar cell according to any one of claims 1 to 9, characterized in that, The work function of the modified layer is greater than the highest occupied molecular orbital energy level of the perovskite material, but less than the work function of the host layer.

11. The solar cell according to any one of claims 1 to 10, characterized in that, The solar cell further includes a base layer disposed on the side of the main layer away from the decorative layer, the base layer comprising a flexurally resistant polymer.

12. The solar cell as claimed in claim 11, characterized in that, The flexurally resistant polymer includes any one or more of polyethylene terephthalate, polynaphthalene dimethyl ethylene ester, polyimide, and polydimethylsiloxane.

13. A method for preparing a solar cell, characterized in that, include: A substrate is provided, and a main layer for fabricating a first electrode layer is formed on the substrate to obtain a semi-finished product, wherein the main layer comprises a metal; A modification layer for the first electrode layer is generated in situ on the surface of the main body layer of the semi-finished product. The modification layer is conductive and includes one or more of the metal nitrides and sulfides. A light-absorbing layer is prepared on the surface of the modified layer, the light-absorbing layer comprising a perovskite material; A second electrode is fabricated on the surface of the light-absorbing layer.

14. The method for preparing a solar cell as described in claim 13, characterized in that, The metal includes one or more of copper, molybdenum, and titanium.

15. The method for preparing a solar cell as described in claim 13 or 14, characterized in that, The modification layer for in-situ generation of the first electrode layer on the surface of the main body layer of the semi-finished product includes: Adjusting the reaction atmosphere, which includes nitrogen, to magnetron sputter the metal onto the surface of the main layer of the semi-finished product, forming a modification layer for the first electrode layer; or Sulfur powder and anhydrous ethanol are placed in a reaction vessel, and the semi-finished product is placed in the reaction vessel. A modification layer for the first electrode is formed on the surface of the main layer of the semi-finished product by a hydrothermal method. The temperature of the hydrothermal method is 60℃~90℃ and the time is 3h~9h.

16. An electrical appliance, characterized in that, This includes solar cells as described in any one of claims 1 to 12, and / or solar cells prepared by the method of preparing solar cells as described in any one of claims 13 to 15.

17. A power generation device, characterized in that, This includes solar cells as described in any one of claims 1 to 12, and / or solar cells prepared by the method of preparing solar cells as described in any one of claims 13 to 15.

Images