Electrode assembly, electrostatic chuck and semiconductor processing device

Abstract

The invention provides an electrode assembly, an electrostatic chuck and a semiconductor processing device. The electrode assembly comprises at least two layers of first electrodes; each layer of first electrode is a first plane spiral coil formed by coiling along the radial direction of the electrostatic chuck; the first electrodes of two adjacent layers are electrically connected through a connection point; and the feed-in point is arranged on the first electrode on the top layer or the bottom layer and is used for feeding in radio frequency current, and the directions of the radio frequency current flowing through each layer of the first planar spiral coil are the same. According to the electrostatic chuck, the electrode assembly in the electrostatic chuck is arranged to be the first electrodes which are arranged in the stacked mode and are of the plane spiral coil structure, the connection mode that the inner end point is connected with the inner end point and the outer end point is connected with the outer end point is alternately used, the inductance characteristic of the electrode assembly is improved, and the radio frequency shielding effect is achieved; and the damage of the radio frequency source to the direct current source is prevented.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to an electrode assembly, an electrostatic chuck, and a semiconductor processing device. Background Technology

[0002] In the field of semiconductor equipment, electrostatic chucks (ESCs) are typically installed within the reaction chamber of semiconductor processing devices to generate electrostatic attraction to hold, fix, and support wafers. Simultaneously, radio frequency (RF) power is applied to the upper and lower chambers of the reaction chamber, creating an RF electric field that ionizes the gas within the chamber to form plasma. This plasma can then be used to perform processes such as thin film deposition, etching, ion implantation, and cleaning on the wafers placed on the ESCs.

[0003] For cavity structures where the upper cavity feeds in a source RF power supply (e.g., >13MHz) and the lower cavity feeds in a pulsating DC or bias RF power supply (e.g., <60MHz), RF current fed from above the electrostatic chuck can affect the DC source fed into the electrostatic chuck, and it is difficult to completely filter out the RF current, easily damaging the power feed components in the lower cavity. Current designs add a filter outside the lower cavity to filter the RF current, but this filter is bulky, and because it is located far from the electrostatic chuck and the wafer, components in the loop from the wafer to the filter are still at risk of being affected by the RF current fed from the upper cavity. Summary of the Invention

[0004] The purpose of this invention is to provide an electrode assembly, an electrostatic chuck, and a semiconductor processing device to increase the inductive characteristics of the electrode assembly within the electrostatic chuck, thereby achieving a shielding effect against radio frequency current and preventing damage from the radio frequency source to the DC source.

[0005] To achieve the above objectives, the present invention provides an electrode assembly disposed within an electrostatic chuck of a semiconductor processing device, comprising: at least two layers of first electrodes; each layer of the first electrode being a first planar spiral coil formed by radial winding along the electrostatic chuck; the first electrodes of adjacent layers being electrically connected through a connection point; and a feed point disposed on the first electrode of the top or bottom layer for feeding radio frequency current, wherein the radio frequency current flowing through each layer of the first planar spiral coil has the same direction.

[0006] Optionally, the longest electrical transmission path exists between the connection point of the first electrode and the feed point.

[0007] Optionally, the linewidth of the first planar spiral coil of the first electrode ranges from 2 to 10 mm.

[0008] Optionally, the number of turns of the first planar spiral coil of the first electrode in each layer is not less than 5 turns.

[0009] Optionally, each turn of the first planar spiral coil of the first electrode is evenly spaced to form a uniform turn pitch, the turn pitch being 0.5 to 1 times the linewidth.

[0010] Optionally, the distance between the first electrodes of two adjacent layers is 0.05 to 0.5 mm.

[0011] Optionally, the power input source connected to the feed point of the first electrode is a DC power supply or a pulsed DC power supply.

[0012] Optionally, it may also include at least one second electrode, which is separated from the first electrode by a dielectric insulating layer.

[0013] Optionally, the first power input source connected to the feed point of the first electrode is a pulsed DC power supply, the second power input source connected to the second electrode is a DC power supply, and the height of the first electrode in the electrostatic chuck is not lower than the height of the second electrode in the electrostatic chuck.

[0014] Optionally, the second electrode is a second planar spiral coil formed by winding radially around the electrostatic chuck along the same central axis as the first electrode, wherein the vertical projection of each turn of the first planar spiral coil of the first electrode is located within the interval of each turn of the second planar spiral coil of the second electrode.

[0015] Optionally, the first electrode includes a first part and a second part, both of which are planar helical coils coaxial with the electrostatic chuck, and the first part and the second part are connected by a transition section.

[0016] Optionally, the connection point of each first electrode is the outer end point of the first planar spiral coil or the inner end point of the first planar spiral coil; the first electrodes of adjacent layers are connected by connecting the inner end point to the inner end point or connecting the outer end point to the outer end point to form the electrical connection.

[0017] The present invention also provides an electrostatic chuck, comprising: a base; a dielectric layer disposed on the base; and an electrode assembly as described above disposed inside the dielectric layer for generating electrostatic adsorption force or providing a bias voltage to adsorb and carry wafers or regulate plasma.

[0018] The present invention also provides a semiconductor processing apparatus, comprising: a reaction chamber; an electrostatic chuck as described above, disposed at the bottom of the reaction chamber for carrying a wafer; and a power feed source connected to an electrode assembly within the electrostatic chuck for providing a DC power supply and / or a pulsed DC power supply.

[0019] Compared with the prior art, the technical solution of the present invention has at least the following advantages: by setting the electrode assembly in the electrostatic chuck as a first electrode with a planar spiral coil structure stacked on top of each other, and making the direction of the radio frequency current flowing through each layer of planar spiral coil the same, a mutually reinforcing magnetic field path is generated between the first electrodes of each layer, thereby forming constructive interference between two adjacent layers of first electrodes, increasing the total inductance of the electrode assembly, and at the same time making the downward transmission path of the radio frequency current the longest, increasing the impedance of the downward transmission of the radio frequency current, improving the radio frequency shielding effect, and preventing the radio frequency source from damaging the DC source.

[0020] Furthermore, by simultaneously setting a first electrode and a second electrode in the electrode assembly, with the height of the second electrode not exceeding that of the first electrode, and feeding a pulsed DC power supply to the first electrode and a DC power supply to the second electrode, radio frequency current shielding is achieved while enhancing the regulation of plasma treatment during the process, thereby improving the uniformity of the wafer. Attached Figure Description

[0021] Figure 1 This is a schematic cross-sectional view of an electrostatic chuck in the prior art;

[0022] Figure 2 This is an enlarged three-dimensional schematic diagram of an electrode assembly according to an embodiment of the present invention;

[0023] Figure 3 This is an enlarged three-dimensional schematic diagram of another electrode assembly according to an embodiment of the present invention;

[0024] Figure 4 This is a top view of the first electrode in another electrode assembly according to an embodiment of the present invention;

[0025] Figure 5 This is a top view of yet another first electrode according to an embodiment of the present invention;

[0026] Figure 6 This is a top view of another electrode assembly according to an embodiment of the present invention;

[0027] Figure 7 In another embodiment of the present invention, the first electrode in the electrode assembly is... Figure 5 Top view of the structure shown;

[0028] Figure 8 This is a schematic diagram of the structure of an electrostatic chuck according to an embodiment of the present invention;

[0029] Figure 9 This is a schematic diagram of the structure of a semiconductor processing device according to an embodiment of the present invention. Detailed Implementation

[0030] The technical solutions, structural features, achieved objectives, and effects of the present invention will be described in detail below with reference to the accompanying drawings in the embodiments of the present invention.

[0031] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to facilitate and clarify the purpose of illustrating the embodiments of the present invention, and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationship, or adjustments to the size should still fall within the scope of the technical content disclosed in the present invention, provided that they do not affect the effects and objectives that the present invention can produce.

[0032] It should be noted that, in this invention, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only the expressly listed elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0033] In existing technologies, such as Figure 1 As shown, the electrostatic chuck 10 in the semiconductor processing device has a planar electrode 11 inside. The planar electrode 11 is connected to the high-voltage DC power supply 12 to achieve adsorption and fixation of the wafer W during the process. The planar electrode 11 has a complete and continuous planar shape. However, when the radio frequency source feeds radio frequency current from above the reaction chamber, the radio frequency current will be fed from above the electrostatic chuck 10 and transmitted downward along the electrostatic chuck, thereby affecting the high-voltage DC power supply 12 and possibly even damaging it. Therefore, in order to achieve filtering of the radio frequency current, a filter for filtering the radio frequency current is usually set outside the reaction chamber. However, the filter has the disadvantage of large size. In addition, since the filter is located far from the electrostatic chuck and the wafer, the components in the loop from the wafer to the filter are still at risk of being affected by the radio frequency current.

[0034] To address the aforementioned shortcomings, this invention adjusts the electrode structure within the electrostatic chuck. The planar electrode is divided from a single, complete planar electrode into planar electrodes arranged in a spiral pattern around the central axis of the electrostatic chuck on the same plane. These spiral planar electrodes are then configured as a multi-layered structure with at least two layers. Adjacent layers are connected through the endpoints of each spiral planar electrode layer. Without altering the performance of the electrostatic chuck itself, these multi-layered spiral planar electrodes form an electrode with significantly higher inductance, greatly increasing the impedance for downward transmission of radio frequency current, thereby providing stronger radio frequency current shielding. A detailed explanation follows:

[0035] Based on the above inventive concept, please refer to Figure 2 , Figure 2 This is an enlarged perspective view of an electrode assembly 100 provided in an embodiment of the present invention. The electrode assembly 100 is disposed in an electrostatic chuck and includes two layers of first electrodes, namely a first layer of first electrode 101a and a second layer of first electrode 101b. Both the first layer of first electrode 101a and the second layer of first electrode 101b are first planar spiral coils formed by radial winding along the electrostatic chuck. The first layer of first electrode 101a and the second layer of first electrode 101b are electrically connected through connection points. In this embodiment, the connection points are the first inner endpoint 111a of the first layer of first electrode 101a and the second inner endpoint 111b of the second layer of first electrode 101b. For example, the first inner endpoint 111a can be spot-welded to the second inner endpoint 111b. 11b forms the electrical connection, so that the RF current flow direction on the first electrode 101a and the second electrode 101b of the first layer is the same, forming constructive interference between the two adjacent first electrodes; the feed point is set on the first electrode set on the top or bottom layer, and is used to connect the power feed source and feed the RF current, and the feed point to the connection point of the first electrode of the layer has the longest electrical transmission path. In this embodiment, the feed point is the first outer end point 112a of the first electrode 101a of the first layer located on the top layer, so that the feed point (i.e. the first outer end point 112a) to the connection point of the first electrode 101a of the first layer (i.e. the first inner end point 111a) has the longest electrical transmission path, thereby providing the maximum inductance value to block the RF current.

[0036] When the radio frequency (RF) current fed from above the electrostatic chuck is transmitted to the electrode assembly 100 within the electrostatic chuck, the RF current propagates along the surface of the first electrode 101a, flows through the first inner endpoint 111a and the second inner endpoint 111b to the second electrode 101b, and continues to propagate along the surface of the second electrode 101b. This creates mutually reinforcing magnetic field paths between the two layers of first electrodes 101a and 101b, which have planar spiral coil shapes, forming constructive interference between them. This increases the total inductance of the electrode assembly 100 and maximizes the downward electrical transmission path of the RF current, increasing the impedance of the downward transmission and thus achieving a blocking effect on the RF current. The first electrode 101a, located at the top layer, is the layer closest to the upper surface of the electrostatic chuck. In this embodiment, since the second outer endpoint 112b and the second inner endpoint 111b also have the longest electrical transmission path, the feed point can also be the second layer first electrode 101b located at the bottom layer. This allows the electrode assembly 100 to have the maximum inductance value, thereby increasing the resistance to radio frequency current and achieving radio frequency shielding. The second layer first electrode 101b located at the bottom layer is the layer furthest from the upper surface of the electrostatic chuck.

[0037] The power input source connected to the feed point of the electrode assembly 100 is a DC power supply or a pulsed DC power supply. Specifically, when the power input source connected to the electrode assembly 100 is a DC power supply, the electrode assembly 100 acts as an adsorption electrode, and the DC voltage fed into the adsorption electrode provides electrostatic adsorption force for the adsorbed wafer W; optionally, the voltage output range of the DC power supply is 100V-10kV. When the power input source connected to the electrode assembly 100 is a pulsed DC power supply, the electrode assembly 100 acts as a bias electrode to provide a bias voltage. The bias voltage provided by the bias electrode generates an additional vertical electric field at the wafer surface. This electric field can supplement the electric field strength at the wafer surface, realizing the adjustment of plasma treatment during the process, thereby improving the uniformity of the wafer. Optionally, the voltage output of the pulsed DC power supply is greater than 1kV, the duty cycle range is 5%-95%, and the frequency is 1kHz-10MHz.

[0038] Furthermore, when the number of layers of the first electrode in the electrode assembly is greater than 2, the connection points of the first electrode alternately connect the first electrodes of adjacent layers from inner end point to inner end point and from outer end point to outer end point. For example... Figure 3 As shown, Figure 3This is an enlarged perspective view of another electrode assembly 200 provided in an embodiment of the present invention. The electrode assembly 200 includes four layers of first electrodes, namely a first layer first electrode 201a, a second layer first electrode 201b, a third layer first electrode 201c, and a fourth layer first electrode 201d. The first inner end point 211a of the first layer first electrode 201a is connected to the second inner end point 211b of the second layer first electrode 201b, the second outer end point 212b of the second layer first electrode 201b is connected to the third outer end point 212c of the third layer first electrode 201c, and the third inner end point 211c of the third layer first electrode 201c is connected to the fourth inner end point 211d of the fourth layer first electrode 201d.

[0039] When the radio frequency current fed from above the electrostatic chuck is transmitted to the electrode assembly 200 inside the electrostatic chuck, the radio frequency current will be transmitted along the surface of the first electrode 201a of the first layer, flow through the first inner endpoint 211a and the second inner endpoint 211b to the second electrode 201b, and continue to be transmitted along the surface of the second electrode 201b, then flow through the second outer endpoint 212b and the third outer endpoint 212c to the third electrode 201c, and continue to be transmitted along the surface of the third electrode 201c, and finally flow through the third inner endpoint 211c and the fourth inner endpoint 211d to the fourth layer. The current is transmitted on the first electrode 201d and continues along the surface of the fourth layer of first electrodes 201d. Therefore, by stacking the four layers of first electrodes and using the connection method of connecting the inner end to the inner end and the outer end to the outer end alternately, the current direction of each layer of electrodes is the same, and a mutually reinforcing magnetic field path is generated between the first electrodes of each layer. This forms constructive interference between adjacent first electrodes, which helps to increase the total inductance of the electrode assembly 200. At the same time, it makes the electrical transmission path of the radio frequency current downward transmission the longest, increases the impedance of the radio frequency current downward transmission, and finally achieves the radio frequency shielding effect, preventing the radio frequency source from damaging the DC source.

[0040] at the same time, Figure 3 In the illustrated embodiment, the feed point for connecting the power feed source can be the first outer end point 212a of the first electrode 201a of the first layer or the second outer end point 212d of the first electrode 201d of the fourth layer. This ensures that there is the longest electrical transmission path between the feed point and the connection point of the layer, and that the current forms a closed flow path in each layer of the first electrode of the electrode assembly 200. This helps to maximize the inductance value of the electrode assembly 200, while also enabling the electrode assembly 200 to form a more complete magnetic field path, reducing magnetic flux leakage in each layer of the first electrode, thereby improving the magnetic field strength and inductance efficiency of the electrode assembly 200 and enhancing the radio frequency shielding effect.

[0041] Among them, such as Figure 4 As shown, Figure 4This is a top view of the first electrode 201 of any layer in another embodiment of the present invention. Due to the limited space within the electrostatic chuck, the linewidth w of the first planar spiral coil of the first electrode 201 ranges from 2 to 10 mm. Each turn of the first planar spiral coil of the first electrode 201 is evenly spaced to form a uniform turn pitch p, which is 0.5 to 1 times the linewidth w. If the linewidth w of the first electrode 201 is too large, under a fixed turn pitch, it will lead to uneven magnetic field distribution, resulting in a decrease in inductance and poor radio frequency shielding effect, failing to completely block the downward transmission of radio frequency current. If the linewidth w of the first electrode 201 is too small, under a fixed turn pitch, it will lead to an increase in the resistance of the first planar spiral coil, resulting in heat accumulation, which will affect the thermal stability and long-term reliability of the first planar spiral coil. At the same time, the heat generated by the first planar spiral coil will cause uneven heat distribution on the electrostatic chuck, which will affect the uniformity of wafer heating and also lead to a decrease in the radio frequency shielding effect.

[0042] To ensure that the first electrode can provide sufficient inductance to block the downward propagation of radio frequency current, such as Figure 4 As shown, the number of turns of the first planar spiral coil of each first electrode 201 layer is not less than 5 turns, in order to meet the inductance requirement for blocking the downward transmission of radio frequency current, while reducing the resistance and loss of the first planar spiral coil, and avoiding the accumulation of heat in the first planar spiral coil, which would affect the heating uniformity of the wafer W. Furthermore, the first electrodes 201a to 201d of each layer in the electrode assembly 200 are uniformly spaced, with a distance of 0.05 to 0.5 mm between adjacent first electrodes, to increase magnetic flux coupling between layers, and to make the magnetic field distribution more uniform between layers, which helps to improve the inductance performance of the first planar spiral coil, thereby increasing the total inductance of the electrode assembly 200. Specifically, in Figure 3 In the embodiment shown, the distance h between the first electrode 201a of the first layer and the first electrode 201b of the second layer is 0.05 to 0.5 mm.

[0043] In yet another embodiment, such as Figure 5 As shown, the first electrode 301 includes a first portion 311 and a second portion 312. Both the first portion 311 and the second portion 312 are planar helical coils coaxial with the electrostatic chuck. The first portion 311 and the second portion 312 are connected by a transition section 313, forming an annular gap 314 between the first portion 311 and the second portion 312. By adjusting the length of the transition section 313, the radial positions of the first portion 311 and the second portion 312 on the electrostatic chuck can be adjusted. When the first electrode 301 is fed with a pulsed DC power supply, the control over the plasma energy and distribution at different radial positions on the wafer surface can be enhanced, thereby improving the uniformity of the wafer.

[0044] In yet another embodiment, such as Figure 6 As shown, the electrode assembly 400 further includes at least one second electrode 402, which is separated from the first electrode 401 by a dielectric insulating layer 403 to prevent direct electrical connection between the first electrode 401 and the second electrode 402, thus preventing a short circuit. The structure of the second electrode 402 can be a planar complete electrode or a multilayer planar spiral coil as described in any of the above embodiments. Specifically, when the first power input source connected to the feed point of the first electrode 401 is a pulsed DC power supply, and the second power input source connected to the second electrode 402 is a DC power supply, the height of the first electrode 401 within the electrostatic chuck is not lower than the height of the second electrode 402 within the electrostatic chuck. This prevents the DC current fed into the second electrode 402 from causing crosstalk to the pulsed DC current fed into the first electrode 401, thus preventing the pulsed DC current from coupling to the wafer W.

[0045] In other embodiments, the first electrode 401 and the second electrode 402 can be simultaneously fed with a DC power supply, which, while achieving radio frequency current shielding, increases the electrostatic adsorption force provided by the electrode assembly, making the electrostatic chuck clamping the wafer more stable; or the first electrode 401 and the second electrode 402 can be simultaneously fed with a pulsed DC power supply, which, while achieving radio frequency current shielding, enhances the regulation of plasma treatment during the process and improves the uniformity of the wafer.

[0046] Furthermore, in this embodiment, as Figure 6 As shown, the second electrode 402 is a second planar spiral coil formed by winding radially around the electrostatic chuck along the same central axis as the first electrode 401. The vertical projection of each turn of the first planar spiral coil of the first electrode 401 is located within the interval of each turn of the second planar spiral coil of the second electrode 402, so that the first electrode 401 and the second electrode 402 do not block each other, further avoiding interference of DC current on pulse DC current, improving the coupling efficiency of pulse DC current coupled to wafer W and enhancing the electrostatic attraction force of DC current on wafer W.

[0047] Furthermore, such as Figure 7 As shown, the first electrode 401 in the electrode assembly 400 can be adopted Figure 5The structure of the first electrode in the illustrated embodiment, namely the first electrode 401, includes a first part 411 and a second part 412. Both the first part 411 and the second part 412 are planar spiral coils with the same central axis as the electrostatic chuck. The first part 411 and the second part 412 are connected by a transition section 413, forming an annular gap 414 between the first part 411 and the second part 412. The vertical projection of the second electrode 402 is located within the annular gap 414, so that the second electrode 402 is not blocked by the first electrode 401. On the one hand, this reduces the crosstalk between the second electrode 402 and the pulsed DC current fed into the first electrode 401, and on the other hand, it improves the electrostatic adsorption of the wafer by the second electrode 402. Figure 7 The second electrode 402 shown is shaped like a second planar spiral coil, which allows the first and second electrodes to cooperate with each other, thereby enhancing the inductance of the electrode assembly 400 and achieving a shielding effect against radio frequency current. In other embodiments, the second electrode 402 can be shaped as a ring-shaped planar electrode.

[0048] like Figure 8 The diagram shows a schematic of an electrostatic chuck 50 according to an embodiment of the present invention. The electrostatic chuck 50 includes a base 51; a dielectric layer 52 disposed on the base 51 for supporting a wafer; and an electrode assembly 500 as described in any of the above embodiments disposed inside the dielectric layer 52. The electrode assembly 500 is connected to a power feed source 53. Specifically, when the power feed source 53 outputs DC power, the electrode assembly 500 generates electrostatic attraction to attract and support the wafer; when the power feed source 53 outputs pulsed DC power, the electrode assembly 500 provides a bias voltage to regulate the plasma.

[0049] The present invention also provides a semiconductor processing apparatus according to an embodiment, such as... Figure 9As shown, the semiconductor processing device in this embodiment is based on the principle of capacitive coupling. A radio frequency (RF) source applied to the electrode plates generates plasma within a reaction chamber via capacitive coupling, which is then used for etching. It includes a reaction chamber 60 surrounded by an outer wall, with an opening on the side wall 61 for accommodating the entry and exit of a substrate. An electrostatic chuck 50, as described in the above embodiment, is located at the bottom of the reaction chamber, serving as a support for the wafer W and also as the lower electrode for plasma excitation. An air intake structure 62 is located within the reaction chamber 60, positioned opposite the RF chuck 50 and connected to a gas supply device. This structure supplies reactive gas to the reaction chamber 60 and also serves as the upper electrode for plasma excitation. A reaction region is formed between the upper and lower electrodes. A power feed source 63 is connected to the electrode assembly 500 within the RF chuck 50, providing DC power and / or pulsed DC power. At least one RF source 64 is applied to the upper electrode via a matching network, generating an RF electric field between the upper and lower electrodes to dissociate the reactive gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited-state atoms, molecules, and free radicals. These active particles can undergo various physical and chemical reactions with the surface of the substrate W to be treated, thereby changing the morphology of the substrate surface and completing the etching process. An exhaust pump 65 is also provided below the reaction chamber 60 to discharge reaction byproducts from the reaction chamber and maintain the vacuum environment of the reaction chamber 60.

[0050] In summary, the electrode assembly, electrostatic chuck, and semiconductor processing device provided by the present invention, by setting the electrode assembly in the electrostatic chuck as a first electrode with a planar spiral coil structure stacked on top of each other, and making the direction of the radio frequency current flowing through each layer of planar spiral coil the same, generates mutually reinforcing magnetic field paths between the first electrodes of each layer, thereby forming constructive interference between adjacent first electrodes, increasing the total inductance of the electrode assembly, and making the downward transmission path of the radio frequency current the longest, increasing the impedance of the downward transmission of the radio frequency current, and improving the radio frequency shielding effect.

[0051] Furthermore, by simultaneously setting a first electrode and a second electrode in the electrode assembly, with the height of the second electrode not exceeding that of the first electrode, and feeding a pulsed DC power supply to the first electrode and a DC power supply to the second electrode, radio frequency shielding is achieved while enhancing the regulation of plasma treatment during the process, thereby improving the uniformity of the wafer.

[0052] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. An electrode assembly, characterized in that, An electrostatic chuck disposed within a semiconductor processing device includes: At least two layers of first electrodes; The first electrode of each layer is a first planar spiral coil formed by winding along the radial direction of the electrostatic chuck. The first electrodes of two adjacent layers are electrically connected through connection points; The feed point is located on the first electrode of the top or bottom layer and is used to feed in radio frequency current. The radio frequency current flowing through the first planar spiral coil of each layer has the same direction.

2. The electrode assembly as described in claim 1, characterized in that, The longest electrical transmission path is between the connection point of the first electrode and the feed point.

3. The electrode assembly as described in claim 1, characterized in that, The linewidth of the first planar spiral coil of the first electrode ranges from 2 to 10 mm.

4. The electrode assembly as claimed in claim 1, characterized in that, The number of turns of the first planar spiral coil of the first electrode in each layer is not less than 5 turns.

5. The electrode assembly as described in claim 3, characterized in that, Each turn of the first planar spiral coil of the first electrode is evenly spaced to form a uniform turn pitch, which is 0.5 to 1 times the line width.

6. The electrode assembly as claimed in claim 1, characterized in that, The distance between the first electrodes of two adjacent layers is 0.05 to 0.5 mm.

7. The electrode assembly as claimed in claim 1, characterized in that, The power input source connected to the feed point of the first electrode is a DC power supply or a pulsed DC power supply.

8. The electrode assembly as claimed in claim 7, characterized in that, It also includes at least one second electrode, which is separated from the first electrode by a dielectric insulating layer.

9. The electrode assembly as claimed in claim 8, characterized in that, The first power input source connected to the feed point of the first electrode is a pulsed DC power supply, the second power input source connected to the second electrode is a DC power supply, and the height of the first electrode in the electrostatic chuck is not lower than the height of the second electrode in the electrostatic chuck.

10. The electrode assembly as claimed in claim 9, characterized in that, The second electrode is a second planar spiral coil formed by winding radially around the electrostatic chuck along the same central axis as the first electrode. The vertical projection of each turn of the first planar spiral coil of the first electrode is located within the interval of each turn of the second planar spiral coil of the second electrode.

11. The electrode assembly as claimed in claim 1, characterized in that, The first electrode includes a first part and a second part, both of which are planar spiral coils coaxial with the electrostatic chuck, and the first part and the second part are connected by a transition section.

12. The electrode assembly as claimed in claim 1, characterized in that, The connection point of each first electrode is the outer end point or the inner end point of the first planar spiral coil; the first electrodes of adjacent layers are connected by connecting the inner end point to the inner end point or connecting the outer end point to the outer end point to form the electrical connection.

13. An electrostatic chuck, characterized in that, include: Base; A dielectric layer is disposed on the base; The dielectric layer is provided with an electrode assembly as described in any one of claims 1 to 12, which is used to generate electrostatic adsorption force or provide bias voltage to adsorb and carry wafers or regulate plasma.

14. A semiconductor processing apparatus, characterized in that, include: reaction chamber; The electrostatic chuck as described in claim 13 is located at the bottom of the reaction chamber and is used to support the wafer; A power feed source, connected to the electrode assembly within the electrostatic chuck, is used to provide DC power and / or pulsed DC power.

Images