Glass substrate with multi-aperture through holes and manufacturing method

Abstract

The invention provides a glass substrate with multi-aperture through holes. The glass substrate comprises a glass core layer; the through holes penetrate through the glass core layer, and the aperture of at least part of the through holes is greater than 100 microns; the through hole comprises a plurality of micropore areas and isolation areas which are arranged at intervals, the micropore areas are filled with metal, and the aperture of the micropore areas is smaller than that of the through hole and smaller than or equal to 100 micrometers; the circuit pattern is formed on the surface of the glass core layer, and the circuit pattern and the metal in the micropore area are electrically connected with the core layer of the multi-aperture TGV through hole glass substrate with the local large aperture, so that the transmission of the functional substrate with the large voltage / current requirement can be facilitated.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging, and in particular to a glass substrate with multi-aperture through-holes and a method for manufacturing it. Background Technology

[0002] With the miniaturization and high integration of electronic products, the performance requirements for circuit boards are becoming increasingly stringent. Glass substrates, with their extremely high surface flatness and low roughness, provide an ideal platform for the manufacture of micro-sized semiconductor devices. Furthermore, glass substrates exhibit strong thermal stability, maintaining stable performance even at high temperatures. Their coefficient of thermal expansion is close to that of silicon, which helps reduce stress problems caused by thermal mismatch during the packaging process.

[0003] Current methods for fabricating through-glass vias (TGVs) on glass substrates primarily employ laser-induced etching combined with wet etching. The main trend in TGV hole diameter is miniaturization, with sizes such as 100 μm and 50 μm being common. However, the maximum TGV hole diameter achievable through laser-induced wet etching in existing technologies is approximately 100 μm, followed by subsequent metallization processes such as seed layer deposition and via-filling electroplating. Due to limitations in via-filling electroplating capabilities, it is impossible to process TGV holes larger than 100 μm.

[0004] Considering that glass substrates are not only used in high-end chips such as AI, their high rigidity and low CTE characteristics are also of great application value in replacing conventional organic substrates. Furthermore, with the application of chips with higher computing power, packaging substrates with high voltage / current resistance have become a necessary trend. Summary of the Invention

[0005] The main objective of this invention is to overcome the aforementioned defects in the prior art. The objective of this invention is to provide a glass substrate with multi-aperture through-holes, and a multi-aperture TGV through-hole glass substrate core layer with locally large apertures, which can facilitate the transmission of functional substrates with high voltage / current requirements.

[0006] The present invention adopts the following technical solution: A glass substrate with multiple through-holes, comprising: Glass core layer; Through-holes penetrating the glass core layer, wherein at least a portion of the through-holes has a diameter greater than 100 μm; The through hole includes multiple spaced micropore regions and isolation regions, wherein: the micropore regions are filled with metal, and the pore diameter of the micropore regions is smaller than the pore diameter of the through hole and less than or equal to 100um; A circuit pattern is formed on the surface of the glass core layer, and the circuit pattern is electrically connected to the microporous region.

[0007] Specifically, the isolation area is filled with insulating ink, and the depth-to-width ratio of the through-hole after filling with insulating ink ranges from 1:2 to 1:20.

[0008] Specifically, the through hole is a large-diameter through hole with a diameter greater than 100 μm, or a combination structure of a large-diameter through hole with a diameter greater than 100 μm and a small-diameter through hole with a diameter less than or equal to 100 μm.

[0009] This invention also provides a method for fabricating a glass substrate with multi-aperture through-holes, comprising the following steps: Provides a glass substrate core layer; Multiple through holes are formed on the glass substrate core layer, wherein at least some of the through holes have a diameter greater than 100 μm; Fill the through hole with ink material; Remove some ink material inside the through hole to form multiple micropore regions in the through hole. The pore diameter of the micropore regions is smaller than the pore diameter of the through hole and is less than or equal to 100 μm. A seed layer is formed on the inner wall of the through-hole containing the plurality of micropore regions and on the surface of the glass substrate. Metal is filled into the through-holes and a circuit pattern is formed by electroplating. Excess seed layer is removed to obtain a glass core packaging substrate with multi-aperture metallized through-holes.

[0010] Specifically, it also includes: filling the through hole with ink material, and removing a portion of the ink material from the through hole, specifically: The through-hole is filled with plugging ink and then cured or semi-cured. After curing or semi-curing, the cured or semi-cured plugging ink is thinned by laser ablation, milling or chemical reaction decomposition.

[0011] Specifically, the through-hole forming is achieved by laser-induced glass modification followed by wet etching.

[0012] This invention also provides a packaging substrate, comprising: The glass substrate with multi-aperture through-holes as described above includes a first surface and a second surface; A dielectric layer is provided on at least one surface of the glass substrate with the multi-aperture through-hole.

[0013] Specifically, the dielectric layers on the first and second surfaces are symmetrical.

[0014] Specifically, the dielectric layers provided on the first and second surfaces are asymmetrical.

[0015] Specifically, the dielectric layer may consist of up to two layers.

[0016] As can be seen from the above description of the present invention, compared with the prior art, the present invention has the following beneficial effects: This invention proposes a multi-aperture through-hole glass substrate, comprising: a glass core layer; through-holes penetrating the glass core layer, wherein at least a portion of the through-holes has a diameter greater than 100 μm; the through-holes include multiple spaced-apart micropore regions and isolation regions, wherein: the micropore regions are filled with metal, the micropore region diameter is smaller than the through-hole diameter, and less than or equal to 100 μm; a circuit pattern formed on the surface of the glass core layer, and the circuit pattern is electrically connected to the micropore regions by metal; the multi-aperture TGV through-hole glass substrate core layer with locally large apertures can facilitate the transmission of functional substrates with high voltage / current requirements.

[0017] This invention proposes a method for manufacturing glass substrates with multi-aperture through-holes. In the large-aperture TGV through-holes, the through-holes are first filled with plugging ink and locally thinned to reduce the aspect ratio. This creates localized multi-micropore features in the large-aperture TGV through-holes, which facilitates metallization and through-hole plating. After through-hole plating, the larger cross-sectional area of ​​the TGV through-holes can increase the signal conduction between the upper and lower layers. Attached Figure Description

[0018] Figure 1-7 This is a schematic diagram of a glass substrate manufacturing process with multi-aperture through-holes provided in an embodiment of the present invention; Figure 8 This is a schematic diagram of the structure of a glass substrate with multi-aperture through holes provided in an embodiment of the present invention; Figure 9 This is a schematic diagram of a packaging substrate structure for a glass substrate utilizing multi-aperture through-holes, provided as an embodiment of the present invention. Figure reference numeral: Glass core layer 100; Through hole 2; Microporous region 3; Quarantine Zone 4; First dielectric layer 500; Second dielectric layer 600; Line layer 700. Detailed Implementation

[0019] The technical solutions of this application will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of this application, and not all embodiments. The components of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0020] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0021] In existing technologies, as electronic devices evolve towards miniaturization and high integration, circuit boards need to simultaneously meet the demands of miniaturized circuit fabrication and high power transmission. Glass substrates, due to their high surface flatness, excellent thermal stability, and thermal expansion coefficient matching that of silicon, have become the preferred material for advanced packaging. Traditional glass substrate via fabrication employs laser-induced vias combined with wet etching processes. Limited by electroplating capabilities, the diameter of metallized vias is typically no more than 100 micrometers. While microvias can meet the demands of high-density interconnection, they cannot meet the cross-sectional area requirements of high-voltage, high-current scenarios, thus limiting power transmission capabilities.

[0022] To address these issues, research revealed that while maintaining the overall large-aperture structure of the through-hole, forming localized microporous structures within it allows for metal filling using existing electroplating processes while preserving the high current-carrying capacity of the large pores. Analysis of the aspect ratio limitations of the electroplating process showed that direct full-hole electroplating of large-aperture through-holes resulted in ineffective metal deposition to the bottom of the hole, leading to voids or incomplete filling. Therefore, a staged aperture treatment scheme was proposed: first, forming microporous regions with suitable electroplating capabilities within the through-hole; then, combining a seed layer with the electroplating process to achieve precise metal filling.

[0023] like Figure 1-7 This is a schematic diagram of a glass substrate manufacturing process with multi-aperture through-holes provided in an embodiment of the present invention. Specifically, like Figure 1 A glass substrate core layer 100 is provided, wherein the glass core layer 100 refers to the substrate body made of inorganic glass material, which can be made of soda-lime glass or borosilicate glass material, and its function is to provide rigid support for the through-hole structure. like Figure 2 Through-holes with a diameter of more than 100 micrometers are formed in the core layer; Through-hole 2 refers to a channel structure that penetrates the thickness of the substrate, namely a glass through-hole (TGV), which can be formed by laser-induced modification combined with wet etching process. This structure allows the construction of composite conductive regions within a single hole. Large-diameter through-holes are fabricated on glass substrates to overcome traditional aperture limitations; The large-diameter through-hole 2 is formed by laser-induced glass modification followed by wet etching.

[0024] Laser-induced glass modification refers to altering the internal structural properties of glass using a high-energy laser beam. Specifically, this can be achieved by using ultraviolet lasers or femtosecond lasers to induce localized lattice distortion or chemical bond breakage in a predetermined area, thereby forming a modified region with selective etching characteristics. Wet etching involves directionally dissolving the modified region using chemical reagents. Specifically, hydrofluoric acid solution can be used as the etching solution, leveraging its preferential reaction with the modified glass to control the morphology of the vias.

[0025] Specifically, laser energy is focused on a target location in the core layer of the glass substrate. By adjusting the beam parameters, the glass surface undergoes non-destructive modification, resulting in a higher dissolution rate in the etching solution for the modified area. The substrate is then immersed in an etching bath. Unmodified areas form a natural barrier layer due to the difference in etching rates, while the modified areas are gradually dissolved and penetrated along the laser scanning path, ultimately forming a through-hole structure with vertical sidewalls. In this process, laser modification defines the etching initiation point and expansion direction, while wet etching completes the final formation of the through-hole through a chemical reaction.

[0026] Through hole 2 is a large-diameter through hole with a diameter greater than 100 μm, or a combination structure of a large-diameter through hole with a diameter greater than 100 μm and a small-diameter through hole with a diameter less than or equal to 100 μm.

[0027] Among them, the large-diameter through hole 2 refers to the hole structure with a diameter exceeding the conventional processing limit formed by adjusting the laser induction parameters and wet etching time. Specifically, it can be achieved by using a high-energy laser beam and extending the etching time. Its function is to break through the existing hole diameter processing limitations and establish a conductive channel with high current carrying capacity.

[0028] Among them, the combined structure refers to the distribution of through holes of different sizes on the same substrate. Specifically, it can be achieved through partitioned laser processing and differentiated etching processes. Its function is to realize functional partition design while meeting the requirements of high-density interconnection and high current transmission.

[0029] Specifically, during glass substrate processing, large-diameter vias are used to create metallized channels with larger cross-sectional areas in areas requiring high voltage or high current, thereby reducing resistance and heat loss. In areas requiring high-density wiring, small-diameter vias are retained to achieve fine circuit connections. This combination of via sizes allows the substrate to maintain its original interconnect density while adding high-power transmission capabilities. Through coordinated optimization of laser parameter control and etching processes, precise forming of vias of different sizes can be achieved, avoiding processing defects caused by differences in aperture.

[0030] Compared to existing technologies, conventional techniques are limited by the limitations of laser-induced wet etching, which can only process through-holes with a single aperture and a maximum size of no more than 100 μm. This results in substrates that cannot meet the current-carrying requirements of high-power applications. This solution, through innovative aperture structure, not only overcomes processing limitations to form large-aperture conductive channels but also achieves functional partitioning through a composite structure, enabling high-density interconnection and high-current transmission to work synergistically on the same substrate. like Figure 3 Fill the through hole 2 with ink material; Ink material filling refers to filling the through-hole space with a processable insulating material. Specifically, photocurable or thermocurable inks can be used, and subsequent local removal can be achieved by controlling the degree of curing. The aspect ratio of the filled through-hole is controlled between 1:2 and 1:20.

[0031] Among them, the isolation area 4 refers to the metal-free filling area located between the microporous areas. Its function is to block the conductive path between adjacent microporous areas. Specifically, epoxy resin insulating material can be filled into this area by screen printing or inkjet deposition.

[0032] The aspect ratio refers to the ratio of the depth of the through hole to the width of the opening. Its range is set by adjusting the laser processing parameters and etching time. This ratio range ensures that the ink material forms a continuous covering layer inside the through hole, while avoiding structural defects caused by material shrinkage.

[0033] Specifically, when filling through-holes with insulating ink, the aspect ratio is limited to between 1:2 and 1:20. When the aspect ratio is below 1:2, the through-hole opening is too large, making it difficult for the ink material to effectively adhere to the hole wall surface; when the aspect ratio exceeds 1:20, the ink is prone to cracking or voids during curing due to concentrated shrinkage stress. By controlling the aspect ratio within the above range, the complete coverage of the through-hole inner wall by the insulating layer is ensured, while maintaining the mechanical strength of the through-hole structure, enabling it to withstand the thermal stress generated by metal filling in subsequent electroplating processes.

[0034] The through-hole is filled with plugging ink and then cured or semi-cured. After curing or semi-curing, the cured or semi-cured plugging ink is thinned by laser ablation, milling or chemical reaction decomposition.

[0035] Among them, the through-hole filling ink refers to a polymer material with insulating properties that can be photocured. Specifically, it can be made of epoxy resin or polyimide materials. After curing, the material can form a stable filling structure, preventing ink flow from clogging the through holes.

[0036] Among them, curing or semi-curing refers to the state in which the ink reaches a predetermined degree of cross-linking through ultraviolet light irradiation or heat baking. Specifically, it can be achieved by using an ultraviolet light source with a wavelength of 300-400nm or a heat treatment process of 80-150℃. This state can ensure that the ink maintains morphological stability during the thinning process.

[0037] Laser ablation refers to the localized vaporization and removal of ink using a high-energy-density laser beam. Specifically, it can be achieved using an ultraviolet laser with a pulse width in the nanosecond range. This method can achieve micron-level processing precision.

[0038] Milling refers to the physical scraping and thinning of the ink layer using mechanical cutting tools, specifically diamond tools or carbide tools. This method is suitable for large-area uniform removal.

[0039] Among them, chemical reaction decomposition refers to the selective dissolution of ink using specific solvents or acidic solutions. Specifically, it can be achieved by soaking the ink in a 5-10% sodium hydroxide solution or an organic solvent. This process can achieve chemical uniformity removal.

[0040] Specifically, after the through-hole is filled with plugging ink, the degree of curing is controlled to form a machinable intermediate structure. The cured ink can be precisely controlled in terms of depth and pore size distribution through laser ablation; for example, an ultraviolet laser can be used to remove the ink layer by layer along the through-hole axis, forming a stepped microporous structure. During milling, the combination of tool feed rate and spindle speed can adjust the ink removal rate, achieving uniform diameter thinning of the microporous area. During the chemical reaction decomposition process, the combination of solution concentration and soaking time can regulate the ink dissolution rate, forming smooth microporous inner walls.

[0041] like Figure 4 Remove some ink material inside the through hole to form multiple micropore regions 3 in the through hole. The pore diameter of the micropore region is smaller than the pore diameter of the through hole and less than or equal to 100 μm.

[0042] Micropore region 3 refers to the metal-filled area inside the through hole formed by secondary processing. It can be formed by electroplating after local removal of the plugging ink, and its pore size is controlled within the effective filling range of the electroplating process.

[0043] After fabricating large-aperture through-holes on the glass core layer, spaced micropore regions 3 are formed by selectively removing the filler inside the through-holes. The pore size of the micropore regions 3 is controlled to be less than or equal to 100 micrometers, allowing the electroplated metal to completely fill the region. The isolation areas between adjacent micropore regions 3 are filled with insulating material to form physical separation.

[0044] like Figure 5-7 A seed layer is formed on the inner wall of the through hole containing the plurality of micropore regions 3 and on the surface of the glass substrate; Metal is filled into the through-holes and a circuit pattern is formed by electroplating. Excess seed layer is removed to obtain a glass core packaging substrate with multi-aperture metallized through-holes.

[0045] Electroplating and patterning process, specifically: Copper electroplating: Electrolyte: Copper sulfate system (Cu²+ 60g / L, H2SO4 100g / L), Current density: 2-5 ASD, Deposition rate: 0.5-1.5 μm / min, Final thickness: 15-30 μm.

[0046] The patterning process is specifically dry film lithography (25 μm thick), with an exposure energy of 100 mJ / cm² and a developer of 1% Na₂CO₃.

[0047] The surface circuit pattern is connected to the metal filling portion of each microvia region through a precise alignment process, forming independent conductive channels. This structure allows a single large-diameter via to carry multiple currents, while the isolation region disperses thermomechanical stress.

[0048] This solution constructs multiple micro-pore regions within a large-diameter through-hole, maintaining the feasibility of the electroplating process while enhancing the overall current carrying capacity of the through-hole through the partitioned structure. Existing monolithic metallized through-holes are prone to stress concentration during thermal cycling; the isolation zone design in this solution effectively mitigates this structural defect.

[0049] like Figure 8 An embodiment provides a glass substrate with multi-aperture through-holes, comprising: Glass core layer 100; Through-holes 2 penetrating the glass core layer, wherein at least a portion of the through-holes has a diameter greater than 100 μm; The through hole includes multiple spaced micropore regions 3 and isolation regions 4, wherein: the micropore regions 3 are filled with metal, and the pore diameter of the micropore regions 3 is smaller than the pore diameter of the through hole and less than or equal to 100um; A circuit pattern is formed on the surface of the glass core layer, and the circuit pattern is electrically connected to the microporous region.

[0050] Specifically, the isolation zone 4 is filled with insulating ink, and the depth-to-width ratio of the through hole after filling with insulating ink is in the range of 1:2 to 1:20.

[0051] Specifically, through hole 2 is a large-diameter through hole with a diameter greater than 100 μm, or through hole 2 is a combination structure of a large-diameter through hole with a diameter greater than 100 μm and a small-diameter through hole with a diameter less than or equal to 100 μm.

[0052] This application further proposes a packaging substrate, including a glass substrate with multiple aperture through-holes and a dielectric layer structure. The glass substrate with multiple aperture through-holes has a first surface and a second surface, and at least one surface is provided with a dielectric layer, such as... Figure 9 The substrate includes a symmetrical glass encapsulation substrate, with two dielectric layers on the first surface and two dielectric layers on the second surface of the glass substrate with multi-aperture through holes, a first dielectric layer 500 and a second dielectric layer 600, and a circuit layer 700. In other embodiments, it is configured as symmetrical or asymmetrical, and at most two layers.

[0053] For example, in the case of an asymmetric glass packaging substrate, the first surface of the glass substrate with multi-aperture through holes is provided with two dielectric layers, and the second surface is provided with one dielectric layer. For example, in the case of an asymmetric glass packaging substrate, a dielectric layer is provided on the first surface of the glass substrate with multi-aperture through holes, and two dielectric layers are provided on the second surface. For example, in the case of an asymmetric glass packaging substrate, the first surface of the glass substrate with multi-aperture through holes is provided with two dielectric layers, while the second surface is not provided with a dielectric layer. For example, in the case of an asymmetric glass packaging substrate, the first surface of the glass substrate with multi-aperture through holes does not have a dielectric layer, while the second surface has two dielectric layers.

[0054] When a dielectric layer is deposited on the surface of a glass substrate with multi-aperture vias, a dielectric material is coated on at least one surface to form an insulating protective layer covering the circuit pattern. In a symmetrical arrangement, the dielectric layer thickness and material are consistent on the first and second surfaces, resulting in a uniform distribution of thermal stress across the substrate. In an asymmetrical arrangement, the dielectric layer thickness or material differs between the two surfaces to meet the mechanical strength requirements of the external packaging structure. The number of dielectric layers is limited to a maximum of two, achieved through a single or double lamination process to avoid excessive stacking that would increase signal transmission loss. The micro-pore regions in the multi-aperture via structure are filled with metal to form high-density interconnect channels. After the dielectric layer covers the surface, the metallized vias are insulated from the external circuitry, preventing current leakage under high-voltage conditions.

[0055] Traditional packaging substrates employ only a single symmetrical structure or a fixed number of dielectric layers, making dynamic adjustments impossible based on circuit functional requirements. For instance, in mixed-signal packaging scenarios, existing technologies cannot simultaneously meet the heat dissipation requirements of the power layer and the low-loss requirements of the signal layer on the same substrate. This solution, however, allows for the optional configuration of symmetrical and asymmetrical structures, enabling the dielectric layer to adapt to the dielectric constant, thermal conductivity, and mechanical strength requirements of different circuit modules.

[0056] This invention proposes a multi-aperture through-hole glass substrate, comprising: a glass core layer; through-holes penetrating the glass core layer, wherein at least a portion of the through-holes has a diameter greater than 100 μm; the through-holes include multiple spaced-apart micropore regions and isolation regions, wherein: the micropore regions are filled with metal, the micropore region diameter is smaller than the through-hole diameter, and less than or equal to 100 μm; a circuit pattern formed on the surface of the glass core layer, and the circuit pattern is electrically connected to the micropore regions by metal; the multi-aperture TGV through-hole glass substrate core layer with locally large apertures can facilitate the transmission of functional substrates with high voltage / current requirements.

[0057] This invention proposes a method for manufacturing glass substrates with multi-aperture through-holes. In the large-aperture TGV through-holes, the through-holes are first filled with plugging ink and locally thinned to reduce the aspect ratio. This creates localized multi-micropore features in the large-aperture TGV through-holes, which facilitates metallization and through-hole plating. After through-hole plating, the larger cross-sectional area of ​​the TGV through-holes can increase the signal conduction between the upper and lower layers.

[0058] The above embodiments are illustrative of the principles and effects of the present invention and are not intended to limit the invention. Those skilled in the art can make modifications to the above embodiments without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the claims.

Claims

1. A glass substrate with multi-aperture through-holes, characterized in that, include: Glass core layer; Through-holes penetrating the glass core layer, wherein at least a portion of the through-holes has a diameter greater than 100 μm; The through hole includes multiple spaced micropore regions and isolation regions, wherein: the micropore regions are filled with metal, and the pore diameter of the micropore regions is smaller than the pore diameter of the through hole and less than or equal to 100um; A circuit pattern is formed on the surface of the glass core layer, and the circuit pattern is electrically connected to the microporous region.

2. The glass substrate with multi-aperture through holes according to claim 1, characterized in that, The isolation zone is filled with insulating ink, and the depth-to-width ratio of the through-hole after filling with insulating ink ranges from 1:2 to 1:

20.

3. A glass substrate with multi-aperture through holes according to claim 1, characterized in that, The through hole is a large-diameter through hole with a diameter greater than 100 μm, or a combination structure of a large-diameter through hole with a diameter greater than 100 μm and a small-diameter through hole with a diameter less than or equal to 100 μm.

4. A method for fabricating a glass substrate with multi-aperture through-holes, characterized in that, Includes the following steps: Provides a glass substrate core layer; Multiple through holes are formed on the glass substrate core layer, wherein at least some of the through holes have a diameter greater than 100 μm; Fill the through hole with ink material; Remove some ink material inside the through hole to form multiple micropore regions in the through hole. The pore diameter of the micropore regions is smaller than the pore diameter of the through hole and is less than or equal to 100 μm. A seed layer is formed on the inner wall of the through-hole containing the plurality of micropore regions and on the surface of the glass substrate. Metal is filled into the through-holes and a circuit pattern is formed by electroplating. Excess seed layer is removed to obtain a glass core packaging substrate with multi-aperture metallized through-holes.

5. The manufacturing method according to claim 4, characterized in that, Also includes: The process involves filling the through-hole with ink material and then removing a portion of the ink material from the through-hole. The through-hole is filled with plugging ink and then cured or semi-cured. After curing or semi-curing, the cured or semi-cured plugging ink is thinned by laser ablation, milling or chemical reaction decomposition.

6. The manufacturing method according to claim 5, characterized in that, The through-hole forming is achieved by laser-induced glass modification followed by wet etching.

7. A glass substrate with multi-aperture through holes according to claim 1, characterized in that, The number of redistribution layers above the glass core layer is greater than the number of redistribution layers below the glass core layer. Furthermore, the line width and spacing of the redistribution structure located above the glass core layer are less than the line width and spacing of the redistribution structure located below the glass core layer. Furthermore, the thickness of the redistribution lines and solder pads located above the glass core layer is less than the thickness of the redistribution lines and solder pads located below the glass core layer.

8. A packaging substrate, characterized in that, include: A glass substrate with multi-aperture through-holes as described in any one of claims 1-3, comprising a first surface and a second surface; A dielectric layer is provided on at least one surface of the glass substrate with the multi-aperture through-hole.

9. A packaging substrate according to claim 7, characterized in that, The dielectric layers provided on the first and second surfaces are either symmetrical or asymmetrical.

10. A packaging substrate according to claim 7, characterized in that, The dielectric layer can have a maximum of two layers.

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