Semiconductor laser element

Abstract

The semiconductor laser element includes an element body that emits laser light from a first end surface. The element body includes: a first recessed portion provided between the first side surface and the element surface, the first recessed portion being recessed toward an interior of the element body; and a second recessed portion provided between the second side surface and the element surface, the second recessed portion being recessed toward an interior of the element body. The first concave part comprises a first inner side face facing the same side with the first side face and a first connecting face connected with the first inner side face and the first side face. The second concave part comprises a second inner side face facing the same side with the second side face and a second connecting face connected with the second inner side face and the second side face. The first connection surface and the second connection surface each include an inclined surface inclined at an angle different from the first side surface and the second side surface with respect to the element surface.

Description

Technical Field

[0001] This disclosure relates to semiconductor laser devices. Background Technology

[0002] The following technology is disclosed: after dividing a semiconductor wafer into multiple laser bars, the laser bars are split based on the separation grooves formed by laser processing, diamond cutting tools or dicing machines, thereby manufacturing semiconductor laser elements from the laser bars (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2020 / 137146 Summary of the Invention

[0006] However, when a separation groove is formed on a laser strip using laser processing, diamond cutting tools, or a dicing machine, deviations occur in the width and depth of the separation groove relative to its length. As a result, if the laser strip is split, wrinkles will form on the split surface of the laser strip.

[0007] A semiconductor laser element disclosed herein includes: an element body having an element surface and an element back surface facing opposite sides, a first end face and a second end face facing opposite sides in a first direction when viewed from the thickness direction of the element surface, and a first side face and a second side face facing opposite sides in a second direction orthogonal to the first direction, wherein the element body emits laser light from the first end face; a surface electrode formed on the element surface; and a back electrode formed on the element back surface. The element body includes: a first recessed portion disposed between the first side face and the element surface, recessed toward the interior of the element body; and a second recessed portion disposed between the second side face and the element surface, recessed toward the interior of the element body. The first recessed portion includes a first inner side face facing the same side as the first side face and a first connecting surface connecting the first inner side face and the first side face. The second recessed portion includes a second inner side face facing the same side as the second side face and a second connecting surface connecting the second inner side face and the second side face. The first connecting surface and the second connecting surface each include an inclined surface that is inclined relative to the element surface at an angle different from that of the first side face and the second side face. Attached Figure Description

[0008] Figure 1 This is a simplified perspective view of the semiconductor laser element according to the first embodiment.

[0009] Figure 2 yes Figure 1 A simplified top view of a semiconductor laser element.

[0010] Figure 3 Therefore Figure 2 A simplified cross-sectional view obtained by cutting a semiconductor laser element along the F3-F3 line.

[0011] Figure 4 It will be with Figure 2 A simplified cross-sectional view of the first recess and its surrounding area in the cross-sectional structure obtained by cutting a semiconductor laser element with the F4-F4 line.

[0012] Figure 5 This is a simplified side view of the first recess and its surrounding area.

[0013] Figure 6 yes Figure 5 An enlarged view of the first end connecting surface and its surrounding area in the first recess.

[0014] Figure 7 It will be with Figure 6 A simplified cross-sectional view of the first end connection surface and its surrounding area in the cross-sectional structure obtained by cutting a semiconductor laser element along the F7-F7 line.

[0015] Figure 8 This is a simplified perspective view illustrating an exemplary manufacturing process of the semiconductor laser element according to the first embodiment.

[0016] Figure 9 It means to continue Figure 8 A simplified perspective view illustrating the manufacturing process.

[0017] Figure 10 It means to continue Figure 9 A simplified perspective view illustrating the manufacturing process.

[0018] Figure 11 It means to continue Figure 10 A simplified perspective view illustrating the manufacturing process.

[0019] Figure 12 It means to continue Figure 11 A simplified top view illustrating the manufacturing process.

[0020] Figure 13 It will be with Figure 12 A simplified cross-sectional view of the separation groove and its surrounding area in the cross-sectional structure obtained by cutting a laser strip along the F13-F13 line.

[0021] Figure 14 This is a simplified perspective view of the semiconductor laser element according to the second embodiment.

[0022] Figure 15 yes Figure 14 A simplified rear view of a semiconductor laser element.

[0023] Figure 16 It will be with Figure 15 A simplified cross-sectional view of the first recess and its surrounding area in the cross-sectional structure obtained by cutting a semiconductor laser element with an F16-F16 line.

[0024] Figure 17 This is a simplified cross-sectional view of the first recess and its surrounding area in the modified semiconductor laser element.

[0025] Figure 18 This is a side view of the semiconductor laser element obtained by observing the semiconductor laser element from the first end face, based on a modified example. Detailed Implementation

[0026] (Detailed explanation)

[0027] Hereinafter, several embodiments of the semiconductor laser element in this disclosure will be described with reference to the accompanying drawings. Furthermore, to simplify and clarify the description, the constituent elements shown in the drawings are not necessarily drawn to a fixed scale. Additionally, for ease of understanding, shading lines are sometimes omitted in sectional views. The accompanying drawings are merely illustrative of embodiments of this disclosure and should not be considered as limiting the scope of this disclosure.

[0028] The following detailed description includes apparatus, systems, and methods that embody exemplary embodiments of the present disclosure. This detailed description is for illustrative purposes only and is not intended to limit the embodiments of the present disclosure or the applicability and use of such embodiments.

[0029] <First Implementation>

[0030] Reference Figures 1 to 13 The semiconductor laser element 10 of the first embodiment will be described.

[0031] Figures 1 to 7 The structure of the semiconductor laser element 10 is shown. Figures 8-13 The manufacturing process of the semiconductor laser element 10 is shown.

[0032] (The overall structure of a semiconductor laser element)

[0033] Reference Figures 1-3 The overall structure of the semiconductor laser element 10 is described.

[0034] Figure 1 A simplified three-dimensional structure of the semiconductor laser element 10 is shown. Figure 2 A simplified top view of the semiconductor laser element 10 is shown. Figure 3 Therefore Figure 2The cross-sectional structure obtained by cutting the semiconductor laser element 10 along the F3-F3 line shows the internal structure of the semiconductor laser element 10. Furthermore, the term "top view" as used in this disclosure refers to a view taken from above. Figure 1 The semiconductor laser element 10 is observed along the Z direction of the mutually orthogonal XYZ axes shown. Furthermore, in this disclosure, the X direction is an example of a "first direction," and the Y direction is an example of a "second direction."

[0035] like Figure 1 As shown, the semiconductor laser element 10 is a surface-emitting laser diode, including an element body 20 and a surface electrode 51 and a back electrode 52 disposed on the element body 20. In one example, the surface electrode 51 constitutes the anode and the back electrode 52 constitutes the cathode.

[0036] The main body 20 is formed as a cuboid with the Z-direction being the thickness direction. Therefore, "top view" is also observed from the thickness direction of the main body 20. Under top view, the main body 20 is formed as a rectangle with the X-direction being the long side and the Y-direction being the short side.

[0037] The component body 20 has: a component surface 21 and a component back surface 22 facing opposite sides in the Z direction; a first end face 23 and a second end face 24 facing opposite sides in the X direction when viewed from above; and a first side face 25 and a second side face 26 facing opposite sides in the Y direction when viewed from above. The thickness direction (Z direction) of the component body 20 can be considered as the direction in which the component surface 21 faces. The first end face 23, the second end face 24, the first side face 25, and the second side face 26 are located between the component surface 21 and the component back surface 22 in the Z direction, connecting the component surface 21 and the component back surface 22. The component body 20 is configured to emit light from the first end face 23.

[0038] A surface electrode 51 is formed on the surface 21 of the component. The surface electrode 51 is formed as a rectangular plate with the Z-direction as its thickness direction. Viewed from above, the surface electrode 51 has a rectangular shape with the X-direction as its longer side and the Y-direction as its shorter side. Figure 1 In the example shown, when viewed from above, the surface electrode 51 is formed to be slightly smaller than the device body 20. The surface electrode 51 is composed of a stacked structure of multiple electrode films. In one example, the surface electrode 51 includes a first electrode film and a second electrode film formed on the first electrode film. The first electrode film is formed, for example, of a Ti (titanium) / Au (gold) alloy. The first electrode film is in contact with the surface 41 (device surface 21) of the semiconductor layer 40. The second electrode film is formed, for example, by gold plating.

[0039] A back electrode 52 is formed on the back side 22 of the component. The back electrode 52 is formed as a rectangular plate with the Z-direction as its thickness direction. Viewed from above, the back electrode 52 has a rectangular shape with the X-direction as its longer side and the Y-direction as its shorter side. Figure 1 In the example shown, when viewed from above, the back electrode 52 is formed to be slightly smaller than the component body 20. That is, the back electrode 52 has the same size as the surface electrode 51. The back electrode 52 is composed of a stacked structure of multiple electrode films. The back electrode 52 is formed, for example, of an AuGeNi (gold-germanium-nickel) / Ti / Au alloy. The back electrode 52 forms an ohmic contact with the semiconductor substrate 30.

[0040] The main body 20 includes a semiconductor substrate 30 and a semiconductor layer 40 disposed on the semiconductor substrate 30.

[0041] The semiconductor substrate 30 is formed as a rectangular plate with the Z direction as its thickness direction. When viewed from above, the semiconductor substrate 30 is formed as a rectangle with the X direction as its long side and the Y direction as its short side.

[0042] like Figure 1 and Figure 3 As shown, the semiconductor substrate 30 has: a substrate surface 31 and a substrate back surface 32 facing opposite sides in the Z direction; and a first substrate end face 33, a second substrate end face 34, a first substrate side face 35, and a second substrate side face 36 located between the substrate surface 31 and the substrate back surface 32 in the Z direction and connecting the substrate surface 31 and the substrate back surface 32. The substrate surface 31 faces the same side as the device surface 21, and the substrate back surface 32 faces the same side as the device back surface 22. The substrate back surface 32 constitutes the device back surface 22. The first substrate end face 33 and the second substrate end face 34 constitute two end faces in the X direction of the semiconductor substrate 30. That is, the first substrate end face 33 and the second substrate end face 34 face opposite sides in the X direction. The first substrate side face 35 and the second substrate side face 36 constitute two end faces in the Y direction of the semiconductor substrate 30. That is, the first substrate side face 35 and the second substrate side face 36 face opposite sides in the Y direction. Therefore, the first substrate end face 33 faces the same side as the first end face 23, and the second substrate end face 34 faces the same side as the second end face 24. The first substrate side surface 35 faces the same side as the first side surface 25, and the second substrate side surface 36 faces the same side as the second side surface 26. In one example, the first substrate end face 33 constitutes a portion of the first end face 23 in the Z direction, and the second substrate end face 34 constitutes a portion of the second end face 24 in the Z direction. The first substrate side surface 35 constitutes a portion of the first side surface 25 in the Z direction, and the second substrate side surface 36 constitutes a portion of the second side surface 26 in the Z direction. Furthermore, in... Figure 3In order to show the various components of the semiconductor layer 40, the overall thickness of the semiconductor layer 40 is shown as being the same as the thickness of the semiconductor substrate 30. However, in reality, the thickness of the semiconductor layer 40 is thinner than the thickness of the semiconductor substrate 30.

[0043] The semiconductor substrate 30 is, for example, an n-type semiconductor substrate (n-GaAs substrate) containing GaAs (gallium arsenide). The semiconductor substrate 30 contains at least one of, for example, Si (silicon), Te (tellurium), and Se (selenium) as an n-type impurity. In the first embodiment, the angle between the first substrate side surface 35 and the second substrate side surface 36 and the substrate surface 31 is 90°. Here, considering manufacturing errors of the semiconductor substrate 30, the angle of the first substrate side surface 35 and the second substrate side surface 36 relative to the substrate surface 31 is 90°, which also includes cases where the angle of the first substrate side surface 35 and the second substrate side surface 36 relative to the substrate surface 31 is 85° or more and 95° or less. In other words, the offset angle of the semiconductor substrate 30 is 0°. That is, the semiconductor substrate 30 uses a just board.

[0044] The substrate surface 31 of the semiconductor substrate 30 is oriented as a (100) plane. A semiconductor layer 40 is formed on the substrate surface 31. The semiconductor layer 40 has a surface 41 that constitutes the element surface 21. The semiconductor layer 40 is epitaxially grown relative to the semiconductor substrate 30. The semiconductor layer 40 is a semiconductor layer stack structure formed by stacking multiple semiconductor layers along the Z direction.

[0045] The first substrate end face 33, the second substrate end face 34, the first substrate side face 35, and the second substrate side face 36 of the semiconductor substrate 30 are each oriented as (110) surfaces. When the semiconductor substrate 30 is made of a semiconductor substrate containing GaAs, the (110) surfaces of the semiconductor substrate 30 have strong cleaving properties. Furthermore, the first substrate end face 33 and the second substrate end face 34 of the semiconductor substrate 30 are made of surfaces that are easier to cleave than the first substrate side face 35 and the second substrate side face 36.

[0046] like Figure 3 As shown, the semiconductor layer 40 includes an active layer 42, an n-side guiding layer 43, a p-side guiding layer 44, an n-type semiconductor layer 45, and a p-type semiconductor layer 46 as multiple semiconductor layers.

[0047] A double heterojunction is formed by distributing an n-side guiding layer 43 between the n-type semiconductor layer 45 and the active layer 42, and a p-side guiding layer 44 between the active layer 42 and the p-type semiconductor layer 46. Electrons are injected from the n-type semiconductor layer 45 into the active layer 42 via the n-side guiding layer 43, and holes are injected from the p-type semiconductor layer 46 into the active layer 42 via the p-side guiding layer 44. This configuration allows for recombination of these electrons and holes in the active layer 42, thereby generating laser light within the active layer 42.

[0048] The n-type semiconductor layer 45 includes an n-type cladding layer 45A formed on the semiconductor substrate 30. The n-type cladding layer 45A is disposed on the semiconductor substrate 30 side relative to the active layer 42. The n-type cladding layer 45A is formed, for example, of a material comprising AlGaAs (aluminum gallium arsenide). The n-type cladding layer 45A has, for example, a thickness of 20,000 Å or more and 35,000 Å or less. The n-type cladding layer 45A is, for example, made of Al... x Ga (1-x) As (0≤x≤1) layers are formed.

[0049] The p-type semiconductor layer 46 includes a first p-type cladding layer 46A, a first p-type etch stop layer 46B, a second p-type cladding layer 46C, a second p-type etch stop layer 46D, a p-type capping layer 46E, and a p-type contact layer 46F stacked on the p-side guiding layer 44. Here, the first p-type cladding layer 46A and the second p-type cladding layer 46C are both examples of "p-type cladding".

[0050] The first p-type cladding layer 46A and the second p-type cladding layer 46C are disposed on the side opposite to the n-type cladding layer 45A relative to the active layer 42. The first p-type cladding layer 46A and the second p-type cladding layer 46C are each formed of, for example, a material containing AlGaAs. The first p-type cladding layer 46A has a thickness of, for example, 1000 Å or more and 2000 Å or less. The second p-type cladding layer 46C has a thickness of, for example, 8000 Å or more and 12000 Å or less. That is, the thickness of the second p-type cladding layer 46C is thicker than the thickness of the first p-type cladding layer 46A. The first p-type cladding layer 46A and the second p-type cladding layer 46C are each formed of, for example, AlGaAs. x Ga (1-x) As (0≤x≤1) layers are formed.

[0051] The first p-type etch stop layer 46B and the second p-type etch stop layer 46D are each formed of a material, for example, containing InGaP (indium gallium phosphide). The thickness of each of the first p-type etch stop layer 46B and the second p-type etch stop layer 46D is thinner than the thickness of each of the first p-type cladding layer 46A and the second p-type cladding layer 46C. The first p-type etch stop layer 46B has, for example, a thickness of 50 Å or more and 300 Å or less. The second p-type etch stop layer 46D has, for example, a thickness of 50 Å or more and 300 Å or less.

[0052] The p-type capping layer 46E is formed of a material, for example, containing GaAs. The thickness of the p-type capping layer 46E is, for example, thicker than the thicknesses of the first p-type etch stop layer 46B and the second p-type etch stop layer 46D, and thinner than the thicknesses of the first p-type cladding layer 46A and the second p-type cladding layer 46C. The p-type capping layer 46E has, for example, a thickness of 1000 Å or more and 3000 Å or less.

[0053] The p-type contact layer 46F is a low-resistance layer used to form an ohmic contact with the surface electrode 51. The p-type contact layer 46F is formed, for example, as a p-type semiconductor layer in which Be (beryllium) is implanted into GaAs as a p-type dopant. The thickness of the p-type contact layer 46F is greater than the thicknesses of the first p-type cladding layer 46A, the first p-type etch stop layer 46B, the second p-type cladding layer 46C, the second p-type etch stop layer 46D, and the p-type capping layer 46E. The p-type contact layer 46F has, for example, a thickness of 30,000 Å or more and 60,000 Å or less.

[0054] The n-type cladding layer 45A, the first p-type cladding layer 46A, and the second p-type cladding layer 46C are configured to achieve the following effects: confining charge carriers (electrons and holes) within the active layer 42; and confining laser light from the active layer 42 between the n-type cladding layer 45A and the first p-type cladding layer 46A and the second p-type cladding layer 46C. The n-type cladding layer 45A is formed as an n-type semiconductor layer in which AlGaAs, for example, has Si (silicon) implanted as an n-type dopant. The first p-type cladding layer 46A and the second p-type cladding layer 46C are each formed as a p-type semiconductor layer in which AlGaAs, for example, has Be implanted as a p-type dopant.

[0055] The n-type cladding 45A has a larger band gap than the n-side guiding layer 43. The first p-type cladding 46A and the second p-type cladding 46C have larger band gaps than the p-side guiding layer 44. Therefore, the effect of confining charge carriers within the active layer 42 and the effect of confining laser light from the active layer 42 between the n-type cladding 45A and the first p-type cladding 46A and the second p-type cladding 46C can be improved respectively, thus enabling the realization of a high-efficiency semiconductor laser element 10.

[0056] The n-side guiding layer 43 and the p-side guiding layer 44 are each formed of a material comprising AlGaAs. The n-side guiding layer 43 and the p-side guiding layer 44 each have a thickness, for example, 200 Å or more and 500 Å or less. The n-side guiding layer 43 is stacked on the n-type semiconductor layer 45. The p-side guiding layer 44 is stacked on the active layer 42. The n-side guiding layer 43 and the p-side guiding layer 44 are each formed of a material comprising, for example, AlGaAs. x Ga (1-x) As (0≤x≤1) layers are formed.

[0057] The active layer 42 has a multiple-quantum-well (MQW) structure. The active layer 42 is used to generate and amplify laser light through electron-hole recombination. The active layer 42 is constructed, for example, by repeatedly stacking multiple cycles of quantum well layers composed of undoped GaAsP layers and barrier layers composed of undoped InAlGaAs layers.

[0058] The ridge 47 is formed by removing a portion of each of the second p-type cladding layer 46C, the second p-type etch stop layer 46D, and the p-type capping layer 46E within the p-type semiconductor layer 46. In one example, a portion of the second p-type cladding layer 46C, the second p-type etch stop layer 46D, and the p-type capping layer 46E is removed by etching, thereby forming a ridge 47. Figure 3 The cross-section shown forms a ridge 47 that is roughly trapezoidal in shape (tablet-shaped).

[0059] A current-restricting layer 48 is formed on the side of the ridge 47. In one example, the side of the p-type capping layer 46E, the side of the second p-type etch stop layer 46D, the exposed surface of the second p-type cladding layer 46C, and the exposed surface of the first p-type etch stop layer 46B are covered by the current-restricting layer 48. The exposed surfaces of the current-restricting layer 48 and the p-type capping layer 46E are covered by the p-type contact layer 46F.

[0060] The semiconductor laser element 10 is configured by an n-side guiding layer 43, an active layer 42, and a p-side guiding layer 44 to form the first end face 23 and the second end face 24 (both referred to as...). Figure 1 The Fabry-Perot resonator serves as the resonator end face. More specifically, the laser generated in the active layer 42 is amplified by stimulated emission while reciprocating between the first end face 23 and the second end face 24. A portion of the amplified laser is emitted as laser light from both the first end face 23 and the second end face 24. Here, in the first embodiment, end face films (not shown) are formed on the first end face 23 and the second end face 24. These end face films may include an insulating reflective film. Alternatively, the end face film may include an insulating anti-reflective film (AR coating). The reflectivity of the end face film including the reflective film can be adjusted. In one example, a sintered reflective film can be formed such that the first end face 23 primarily emits laser light, and almost no laser light is emitted from the second end face 24.

[0061] (Side structure of a semiconductor laser element)

[0062] Reference Figures 1 to 7 The side structure of the semiconductor laser element 10 will be described.

[0063] Figure 4 Therefore Figure 2The cross-sectional structure obtained by cutting the semiconductor laser element 10 along the F4-F4 line shows an enlarged cross-sectional structure of a portion of the element surface 21 and the first side surface 25 of the element body 20. Figure 5 The first recess 60, which will be described later, is shown in magnification. Figure 6 Lieutenant General Figure 5 A portion of the first recess 60 is shown magnified. Figure 7 Showing Figure 6 The cross-sectional structure obtained by cutting the first recessed part 60 along the F7-F7 line.

[0064] like Figure 1 and Figure 2 As shown, the component body 20 includes a first recess 60 and a second recess 70. The first recess 60 is disposed between a first side surface 25 of the component body 20 and a component surface 21. The first recess 60 is recessed toward the interior of the component body 20. The first recess 60 opens in the direction facing the component surface 21 and also in the direction facing the first side surface 25. The second recess 70 is disposed between a second side surface 26 of the component body 20 and the component surface 21. The second recess 70 is recessed toward the interior of the component body 20. The second recess 70 opens in the direction facing the component surface 21 and also in the direction facing the second side surface 26. The first recess 60 and the second recess 70 are disposed in the Z direction on a portion of the component body 20 adjacent to the component surface 21, including the component surface 21. The first recess 60 and the second recess 70 are formed from the semiconductor layer 40 to the semiconductor substrate 30. More specifically, the first recess 60 and the second recess 70 are integrally formed throughout the semiconductor layer 40 in the Z direction. The first recess 60 and the second recess 70 are formed in the Z direction in a portion of the bias semiconductor layer 40 in the semiconductor substrate 30.

[0065] The first recess 60 includes: a first inner side surface 61 facing the same side as the first side surface 25; and a first connecting surface 62 connecting the first inner side surface 61 and the first side surface 25.

[0066] The first inner surface 61 is formed in the Y direction at a position relative to the second side 26, compared to the first inner surface 25. The first inner surface 61 is connected to the component surface 21. The first inner surface 61 penetrates the semiconductor layer 40 in the Z direction (see reference). Figure 3 The first inner surface 61 is disposed in the Z direction in a portion of the semiconductor substrate 30 adjacent to the semiconductor layer 40. In one example, the first inner surface 61 is a surface parallel to the first side surface 25.

[0067] The first connection surface 62 is formed relative to the first inner surface 61 at a position biased towards the back surface 22 of the component. That is, the first connection surface 62 is disposed biased towards the back surface 22 of the component than the semiconductor layer 40. In other words, the first connection surface 62 is disposed on the semiconductor substrate 30 (see reference 30). Figure 3 The first connecting surface 62 is connected to the end edge of the first inner surface 61 in the Z direction that is close to the back surface 22 of the element. In one example, the first connecting surface 62 is integrally connected to the end edge of the first inner surface 61 in the X direction.

[0068] The first connecting surface 62 is formed as an inclined surface that is tilted relative to the component surface 21 at an angle different from that of the first side surface 25 and the second side surface 26. More specifically, the first connecting surface 62 is inclined toward the first side surface 25 in the Z direction from the first inner side surface 61 to the component back surface 22.

[0069] like Figure 4 As shown, the angle θ1 of the first connecting surface 62 relative to the component surface 21 is 45° or more and 65° or less. Preferably, the angle θ1 is 50° or more and 60° or less. The length LC of the first connecting surface 62 in the inclined direction is shorter than the length LZC of the first inner surface 61 in the Z direction. In one example, the length LC is shorter than the length LZE of the end in the X direction of the first inner surface 61 in the Z direction (see reference). Figure 6 (Short.) In one example, the length LC is greater than 2 μm and less than 8 μm.

[0070] The distance W1 between the first side surface 25 and the first inner side surface 61 in a direction perpendicular to the first side surface 25 (Y direction in the first embodiment) is greater than the length LX1 of the first recess 60 in the X direction (refer to...). Figure 2 In one example, the distance W1 is shorter than the length LZ1 of the first recess 60 in the Z direction. In another example, the distance W1 is shorter than the length LZC of the first inner surface 61 in the Z direction. In yet another example, the distance W1 is shorter than the length LC of the first connecting surface 62 in the inclined direction. Figure 4 In the example shown, the distance W1 is greater than 1 μm and less than 5 μm.

[0071] like Figure 5 As shown, the first connecting surface 62 is inclined towards the component surface 21 at both ends in the X direction, following the edge of the first connecting surface 62 in the X direction. Figure 6 As shown, one of the two ends of the first connecting surface 62 in the X direction is near the first end surface 23 (refer to...). Figure 2The end of this side bends toward the element surface 21 along its edge in the X direction. Therefore, the length LZE of the two ends of the first inner surface 61 in the X direction in the Z direction is shorter than the length LZC of the portion of the first inner surface 61 closer to the center in the X direction compared to the two ends. Additionally, the two ends of the first connecting surface 62 in the X direction near the second end surface 24 (see reference...) Figure 2 The end of this side can have the same structure as the end of the first end face 23 of the two ends of the first connecting surface 62 in the X direction.

[0072] like Figure 5 As shown, the first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the X direction. The first end connecting surface 63A connects to the first end surface 23 (see reference) at one of the two ends of the first inner surface 61 in the X direction. Figure 2 This end is connected to the first side surface 25. The first end connecting surface 63B connects to the two ends of the first inner side surface 61 in the X direction near the second end surface 24 (see reference). Figure 2 This end is connected to the first side 25.

[0073] like Figure 6 As shown, the first end connection surface 63A connects the component surface 21 to the first connection surface 62 in the Z direction. In one example, the first end connection surface 63A extends along the Z direction. In another example, the first end connection surface 63A is a surface orthogonal to the component surface 21.

[0074] like Figure 7 As shown, the angle θ2 of the first end connecting surface 63A relative to the first inner surface 61 is greater than the angle θA of the first connecting surface 62 relative to the first inner surface 61 (refer to...). Figure 4 Large. In one example, angle θ2 is greater than 85° and less than 95°. In another example, angle θ2 is greater than 87° and less than 93°. In another example, angle θ2 is greater than 88° and less than 92°. In yet another example, angle θ2 is greater than 89° and less than 91°. Figure 7 In the example shown, angle θ2 is 90°.

[0075] like Figure 6 and Figure 7 As shown, the length LE of the first end connecting surface 63A between the first inner side surface 61 and the first side surface 25 is greater than the length LC of the first connecting surface 62 in the inclined direction (refer to...). Figure 6 (Short.) In one example, the length LE is greater than 1 μm and less than 5 μm.

[0076] Furthermore, the first end connecting surface 63B has the same structure as the first end connecting surface 63A. Therefore, the angle between the first end connecting surface 63B and the first inner surface 61 is the same as angle θ2. The length of the first end connecting surface 63B between the first inner surface 61 and the first side surface 25 is equal to the length LE.

[0077] like Figure 2 As shown, the second recess 70 includes a second inner surface 71 facing the same side as the second side surface 26, and a second connecting surface 72 connecting the second inner surface 71 and the second side surface 26. The second connecting surface 72 is formed as an inclined surface that is inclined relative to the component surface 21 at an angle different from that of the first side surface 25 and the second side surface 26. The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the X direction. The second end connecting surface 73A connects the end of the second inner surface 71 near the first end surface 23 in the X direction to the second side surface 26. The second end connecting surface 73B connects the end of the second inner surface 71 near the second end surface 24 in the X direction to the second side surface 26.

[0078] The shape and size of the second recess 70 are the same as those of the first recess 60. That is, the angle of the second connecting surface 72 relative to the component surface 21 is the same as the angle θ1 of the first connecting surface 62 relative to the component surface 21. Specifically, the angle of the second connecting surface 72 relative to the component surface 21 is 50° or more and 60° or less. Preferably, the angle of the second connecting surface 72 relative to the component surface 21 is 53° or more and 57° or less. The distance between the second side surface 26 and the second inner side surface 71 in the direction perpendicular to the second side surface 26 (Y direction in the first embodiment) is equal to the distance W1. That is, the distance between the second side surface 26 and the second inner side surface 71 in the direction perpendicular to the second side surface 26 is 1 μm or more and 5 μm or less. The angles of the second end connecting surfaces 73A and 73B relative to the second inner side surface 71 are equal to the angle θ2 of the first end connecting surface 63A relative to the first inner side surface 61. Therefore, the angles of the second end connecting surfaces 73A and 73B relative to the second inner side surface 71 are larger than the angle of the second connecting surface 72 relative to the second inner side surface 71. The angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 can be, for example, 85° or more and 95° or less, 87° or more and 93° or less, 88° or more and 92° or less, or 89° or more and 91° or less. Furthermore, the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 are equal to the length LE of the first end connecting surface 63A between the first inner surface 61 and the first side surface 25. Therefore, the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 are shorter than the length of the second connecting surface 72 in the inclined direction. The lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 can also be, for example, 1 μm or more and 5 μm or less.

[0079] like Figure 1 and Figure 2 As shown, the first recess 60 and the second recess 70 are partially disposed on the component body 20 in the X direction.

[0080] The component body 20 includes a first region 27 and a second region 28 at both ends in the X direction. The first region 27 is formed at both ends of the first side surface 25 of the component body 20 in the X direction. The second region 28 is formed at both ends of the second side surface 26 of the component body 20 in the X direction. A first recess 60 is disposed in the component body 20 between the first regions 27 formed at both ends in the X direction. A second recess 70 is disposed in the component body 20 between the second regions 28 formed at both ends in the X direction. Figure 1 and Figure 2In the example shown, a first recess 60 is provided between the first regions 27 formed at both ends in the X direction in the component body 20. A second recess 70 is provided between the second regions 28 formed at both ends in the X direction in the component body 20. Thus, the first recess 60 and the second recess 70 are respectively provided in the component body 20 at positions that are separated from the first end face 23 and the second end face 24 in the X direction.

[0081] The lengths LX1 and LX2 of the first recess 60 and the second recess 70 in the X direction are respectively longer than the length RX1 of the first region 27 in the X direction and the length RX2 of the second region 28 in the X direction. Furthermore, lengths LX1 and LX2 are each longer than the sum of lengths RX1 and RX2 (RX1 + RX2). That is, lengths LX1 and LX2 are longer than half the length LS of the component body 20 in the X direction. In one example, the length LX1 of the first recess 60 in the X direction is equal to the length LX2 of the second recess 70 in the X direction.

[0082] exist Figure 1 and Figure 2 In the example, the lengths RX1 in the X direction of the two first regions 27 are equal. The lengths RX2 in the X direction of the two second regions 28 are equal. Lengths RX1 and RX2 are equal. Alternatively, lengths RX1 and RX2 can be arbitrarily changed. In one example, the lengths RX1 in the X direction of the two first regions 27 can also be different. In one example, the lengths RX2 in the X direction of the two second regions 28 can also be different. In one example, lengths RX1 and RX2 can also be different.

[0083] The ratio (LX1 / LS) of the length LX1 of the first recess 60 in the X direction to the length LS of the component body 20 in the X direction, and the ratio (LX2 / LS) of the length LX2 of the second recess 70 in the X direction to the length LS of the component body 20 in the X direction, are both 5 / 8 or more and 7 / 8 or less. In one example, the ratios (LX1 / LS) and (LX2 / LS) may also be 4 / 6 or more and 5 / 6 or less.

[0084] exist Figure 2In the example shown, the lengths LX1 and LX2 of the first recess 60 and the second recess 70 in the X direction are approximately 400 μm. The length RX1 of the first region 27 in the X direction is approximately 100 μm. The length RX2 of the second region 28 in the X direction is approximately 100 μm. Therefore, the length LS of the component body 20 in the X direction is approximately 600 μm. Consequently, the ratio (LX1 / LS) of the length LX1 of the first recess 60 in the X direction to the length LS of the component body 20 in the X direction, and the ratio (LX2 / LS) of the length LX2 of the second recess 70 in the X direction to the length LS of the component body 20 in the X direction, are both 2 / 3.

[0085] The length LZ1 of the first recess 60 in the Z direction is shorter than the length LX1 of the first recess 60 in the X direction. Here, the length LZ1 can be defined by the distance between the junction of the first connecting surface 62 and the first side surface 25 in the Z direction and the component surface 21. The junction of the first connecting surface 62 and the first side surface 25 refers to the portion that connects the first connecting surface 62 and the first side surface 25 in the Z direction.

[0086] The length of the second recess 70 in the Z direction is shorter than its length LX2 in the X direction. Here, the length of the second recess 70 in the Z direction can be defined by the distance between the junction of the second connecting surface 72 and the second side surface 26 in the Z direction and the component surface 21. The junction of the second connecting surface 72 and the second side surface 26 refers to the portion connecting the second connecting surface 72 and the second side surface 26 in the Z direction.

[0087] (Manufacturing method of semiconductor laser element)

[0088] Reference Figures 8-13 The manufacturing method of the semiconductor laser element 10 will be described. Hereinafter, the process of manufacturing multiple semiconductor laser elements 10 by dividing a semiconductor wafer 200 will be described.

[0089] Figure 8 A simplified three-dimensional structure of the semiconductor wafer 200 is shown.

[0090] like Figure 8 As shown, the manufacturing method of the semiconductor laser element 10 includes a step of preparing a semiconductor wafer 200. The semiconductor wafer 200 is made of GaAs. The semiconductor wafer 200 includes multiple semiconductor substrates 30 (see reference). Figure 1 The wafer, and the semiconductor layer 40 constituting each semiconductor substrate 30 (see reference) Figure 1The semiconductor wafer 200 has a stacked structure of semiconductor layers. The semiconductor wafer 200 includes a wafer surface 201 and a wafer back surface 202 facing opposite sides in the Z direction. The wafer surface 201 forms a (100) plane. Although not shown, a plurality of surface electrodes 51 (see reference) are formed on the wafer surface 201. Figure 1 Additionally, although not shown in the figure, a plurality of back electrodes 52 are formed on the back side 202 of the wafer (see reference). Figure 1 ).

[0091] A plurality of laser stripes (LD stripes) 210, each comprising multiple independent elements, are formed in the semiconductor wafer 200. Each laser strip 210 is formed in a rectangular region on the semiconductor wafer 200 defined by an imaginary cutting line 203. Each independent element constitutes a semiconductor laser element 10 (see reference). Figure 1 The laser strip 210 includes multiple semiconductor laser elements 10. The laser strip 210 may also be referred to as a strip or a substrate.

[0092] like Figure 8 As shown, the manufacturing method of the semiconductor laser element 10 includes a step of cutting a semiconductor wafer 200 along a cutting line 203. In one example, a diamond cutting tool is used to create a cut along the cutting line 203 on the semiconductor wafer 200. Then, the semiconductor wafer 200 is divided by applying force to the back surface 202 of the semiconductor wafer 200. Through this step, as... Figure 9 As shown, multiple rod-shaped laser strips 210 with long and short sides are formed. Figure 9 A simplified three-dimensional structure of the three laser strips 210 is shown. Additionally, in Figure 9 In this paper, the surface electrode 51, the back electrode 52, and the separation groove 220 described later are omitted. Alternatively, the laser strips 210 can be formed by splitting the plate-shaped substrate after cutting out a plate-shaped substrate including multiple laser strips 210 from the semiconductor wafer 200. The cutting out of the plate-shaped substrate can also be performed by dicing, scribing, laser processing, etc.

[0093] The side surface 211 along the long side of each laser strip 210 constitutes Figure 1 The semiconductor laser element 10 shown has a first end face 23 (second end face 24). The side faces 212 along the short side of each laser strip 210 constitute... Figure 1 The first side 25 (second side 26) of the semiconductor laser element 10 shown.

[0094] Figure 10 The layered structure of the laser strip 210 and the separator 230 is shown.

[0095] like Figure 10As shown, the manufacturing method of the semiconductor laser element 10 includes: a step of alternately stacking a plurality of laser strips 210 and a plurality of spacers 230; and a step of forming an end-face film. The end-face film may also include an insulating reflective film. Additionally, the end-face film may also include an insulating anti-reflective film (AR coating). The reflectivity of the end-face film including the reflective film can be adjusted. In one example, a reflective film obtained by firing can be formed such that the side surface 211 constituting the first end-face 23 mainly emits laser light, and almost no laser light is emitted from the side surface 211 constituting the second end-face 24.

[0096] Figure 11 The three-dimensional structure of a laser strip 210 is shown. Figure 12 This shows a top view of the structure of a laser strip. Figure 13 Showing Figure 12 A portion of the cross-sectional structure obtained by cutting laser strip 210 along F13-F13 line.

[0097] like Figures 11-13 As shown, the manufacturing method of the semiconductor laser element 10 includes a step of forming a separation groove 220. This step is performed, for example, before the semiconductor wafer 200 is cut into a plurality of laser strips 210. Alternatively, when a plate-shaped substrate including a plurality of laser strips 210 is cut from the semiconductor wafer 200, the step of forming the separation groove 220 may also be performed before cutting the plate-shaped substrate. That is, the separation groove 220 is formed on the semiconductor wafer 200.

[0098] like Figure 11 and Figure 12 As shown, multiple separation grooves 220 are provided separately from each other along the long side of the laser strip 210. Each separation groove 220 extends along the short side of the laser strip 210. Each separation groove 220 is partially provided along the short side of the laser strip 210. That is, each separation groove 220 is provided away from both sides 211 of the laser strip 210. The portion between the separation groove 220 and the side 211 along the short side of the laser strip 210 constitutes the first region 27 and the second region 28 (see reference). Figure 2 ).

[0099] Although not illustrated, each separation trench 220 is formed from the semiconductor layer 40 (semiconductor layer stack structure) to the semiconductor wafer 200. Each separation trench 220 penetrates the semiconductor layer 40 (semiconductor layer stack structure) in the Z direction. Each separation trench 220 is formed from a portion of the wafer surface 201 of the semiconductor wafer 200 in the Z direction. Each separation trench 220 is formed by etching. In one example, each separation trench 220 is formed by dry etching.

[0100] like Figure 13As shown, the separation groove 220 is a groove that forms the first recess 60 and the second recess 70. The top end of the separation groove 220 is formed into a tapered shape that gradually tapers towards the top. The separation groove 220 includes a first separation side surface 221 forming the first inner side surface 61, a second separation side surface 222 forming the second inner side surface 71, a first tapered surface 223 forming the inclined surface 62A of the first connecting surface 62, and a second tapered surface 224 forming the inclined surface of the second connecting surface 72. In the first embodiment, the tapered shape of the separation groove 220 is formed by connecting the first tapered surface 223 and the second tapered surface 224. The first tapered surface 223 and the second tapered surface 224 form a (111) surface.

[0101] The method for manufacturing a semiconductor laser element 10 includes a process of dividing a laser strip 210 into a plurality of semiconductor laser elements 10.

[0102] The laser strip 210 is split along the separation grooves 220. In one example, external stress is applied to the laser strip 210 while a blade (not shown) is in contact with the laser strip 210 from the back side along each separation groove 220. As a result, cracks are generated on the laser strip 210 starting from the top of each separation groove 220, thereby splitting the laser strip 210 along each separation groove 220. After the above process, the semiconductor laser element 10 is manufactured.

[0103] (effect)

[0104] The effects of the semiconductor laser element 10 in the first embodiment will be explained.

[0105] When multiple semiconductor laser elements 10 are formed by splitting the laser strip 210, cracks are generated in the laser strip 210 in its thickness direction, starting from the top of the first conical surface 223 and the second conical surface 224 connecting the separation groove 220. Therefore, the laser strip 210 is easily split.

[0106] However, when using, for example, a diamond cutting tool to form separation grooves for dividing the laser strip 210 into multiple semiconductor laser elements 10, deviations in the width and depth of the separation grooves can sometimes occur. Furthermore, if the laser strip 210 is split, cracks will be generated on the laser strip 210 starting from multiple points of the separation groove, thus forming wrinkles on the first side 25 of the semiconductor laser element 10.

[0107] Furthermore, due to the mechanical contact between the diamond cutting tool and the semiconductor wafer 200, the portion of the semiconductor wafer 200 forming the separation groove may sometimes be damaged and scattered as fragments. Such fragments may adhere as foreign objects to the first end face 23 and the second end face 24 of the separated semiconductor laser element 10.

[0108] Furthermore, when laser processing is used instead of a diamond cutting tool to form the separation grooves for dividing the laser strip 210 into multiple semiconductor laser elements 10, the separation grooves and their surroundings may melt due to the heat of the laser. Additionally, laser processing can sometimes cause deviations in the width and depth of the separation grooves. Moreover, if the laser strip 210 is split, cracks are generated on the laser strip 210 starting from multiple points in the separation grooves, thus forming wrinkles on the first side surface 25 of the semiconductor laser element 10.

[0109] In the first embodiment, a separation groove 220 for dividing the laser strip 210 into multiple semiconductor laser elements 10 is formed by dry etching. In the dry etching, a first separation side surface 221 and a second separation side surface 222 of the separation groove 220 are formed along the surface orientation of the laser strip 210. That is, the first separation side surface 221 and the second separation side surface 222 form (110) surfaces. Furthermore, the first tapered surface 223 and the second tapered surface 224 form (111) surfaces. Therefore, deviations in the depth of the separation groove 220 are less likely to occur. Thus, even if the laser strip 210 is split, wrinkles can be suppressed from forming on the first side surface 25 of the semiconductor laser element 10. Furthermore, since there is no mechanical contact from a diamond cutting tool, defects in the semiconductor wafer 200 are suppressed when the separation groove 220 is formed. Therefore, the generation of fragments from the semiconductor wafer 200 can be suppressed. Therefore, the adhesion of fragments (foreign matter) to the first end surface 23 and the second end surface 24 of the semiconductor laser element 10 can be suppressed.

[0110] (Effect)

[0111] The semiconductor laser element 10 according to the first embodiment can achieve the following effects.

[0112] (1-1) The semiconductor laser element 10 includes: an element body 20 having an element surface 21 and an element back surface 22 facing opposite sides, a first end face 23 and a second end face 24 facing opposite sides in the X direction when viewed from above, and a first side face 25 and a second side face 26 facing opposite sides in the Y direction. The element body 20 emits laser light from the first end face 23; a surface electrode 51 formed on the element surface 21; and a back electrode 52 formed on the element back surface 22. The element body 20 includes: a first recess 60 disposed between the first side face 25 and the element surface 21, recessed toward the interior of the element body 20; and a second recess 70 disposed between the second side face 26 and the element surface 21, recessed toward the interior of the element body 20. The first recess 60 includes a first inner side face 61 facing the same side as the first side face 25 and a first connecting surface 62 connecting the first inner side face 61 and the first side face 25. The second recess 70 includes a second inner surface 71 facing the same side as the second side surface 26 and a second connecting surface 72 connecting the second inner surface 71 and the second side surface 26. The first connecting surface 62 and the second connecting surface 72 each include an inclined surface that is inclined relative to the element surface 21 at an angle different from that of the first side surface 25 and the second side surface 26.

[0113] According to this structure, when forming the semiconductor laser element 10 by splitting the laser strip 210, wrinkles on the first side surface 25 and the second side surface 26 can be suppressed by using the first connecting surface 62 and the second connecting surface 72, which are inclined surfaces. Therefore, the quality of the first side surface 25 and the second side surface 26, which are the splitting surfaces, can be improved.

[0114] (1-2) The angle θ1 of the first connecting surface 62 relative to the component surface 21 and the angle of the second connecting surface 72 relative to the component surface 21 are respectively above 50° and below 60°.

[0115] According to this structure, when forming the semiconductor laser element 10 by splitting the laser strip 210, wrinkles on the first side surface 25 and the second side surface 26 can be further suppressed. Therefore, the quality of the first side surface 25 and the second side surface 26, which become the splitting surfaces, can be improved.

[0116] (1-3) The first recessed portion 60 and the second recessed portion 70 are respectively partially disposed on the component body 20 in the X direction.

[0117] According to this structure, compared to a structure in which the first recess 60 and the second recess 70 are integrally disposed throughout the element body 20 in the X direction, the laser strip 210 is less likely to break when operated. Therefore, the laser strip 210 is easier to operate.

[0118] (1-4) The component body 20 includes: a first region 27, in which no first recess 60 is formed at either end in the X direction of the portion between the first side surface 25 and the component surface 21; and a second region 28, in which no second recess 70 is formed at either end in the X direction of the portion between the second side surface 26 and the component surface 21. A first recess 60 is provided between the first regions 27 at either end in the X direction of the portion between the first side surface 25 and the component surface 21. A second recess 70 is provided between the second regions 28 at either end in the X direction of the portion between the second side surface 26 and the component surface 21.

[0119] According to this structure, compared to the case where the first recess 60 is located at the end in the X direction of the portion between the first side surface 25 and the element surface 21, and the case where the second recess 70 is located at the end in the X direction of the portion between the second side surface 26 and the element surface 21, the laser bar 210 is less likely to break when operated. Therefore, the laser bar 210 is easier to operate.

[0120] (1-5) The length LX1 of the first recess 60 in the X direction is longer than the length RX1 of the first region 27 in the X direction. The length LX2 of the second recess 70 in the X direction is longer than the length RX2 of the second region 28 in the X direction.

[0121] According to this structure, compared to the case where the length LX1 in the X direction of the first recess 60 is shorter than the length RX1 in the X direction of the first region 27, and the length LX2 in the X direction of the second recess 70 is shorter than the length RX2 in the X direction of the second region 28, it is easier to split the laser strip 210.

[0122] (1-6) The ratio of the length LX1 of the first recess 60 in the X direction to the length LS of the component body 20 in the X direction (LX1 / LS) and the ratio of the length LX2 of the second recess 70 in the X direction to the length LS of the component body 20 in the X direction (LX2 / LS) are 5 / 8 or more and 7 / 8 or less, respectively.

[0123] According to this structure, the following two aspects can be achieved simultaneously: the laser strip 210 is not easily broken when operated, thus making it easy to operate the laser strip 210; and the laser strip 210 is easy to split.

[0124] (1-7) The first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the X direction. The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the X direction. The angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are larger than the angles θA of the first connecting surface 62 relative to the first inner surface 61 and the second connecting surface 72 relative to the second inner surface 71, respectively.

[0125] According to this structure, compared to cases where the angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61, and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are respectively the angles θA of the first connecting surface 62 relative to the first inner surface 61 and the angles of the second connecting surface 72 relative to the second inner surface 71, the laser strip 210 is less likely to break when operated. Therefore, the laser strip 210 is easier to operate.

[0126] (1-8) The angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are respectively above 85° and below 95°.

[0127] According to this structure, compared to cases where the angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are less than 85° or greater than 95°, the laser strip 210 is less likely to break when operated. Therefore, the laser strip 210 is easier to operate.

[0128] (1-9) The angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are 87° and above and 93° and below, respectively.

[0129] According to this structure, compared to cases where the angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are less than 87° or greater than 93°, the laser strip 210 is less likely to break when operated. Therefore, the laser strip 210 is easier to operate.

[0130] (1-10) The angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are 88° and above and 92° and below, respectively.

[0131] According to this structure, compared to cases where the angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are less than 88° or greater than 92°, the laser strip 210 is less likely to break when operated. Therefore, the laser strip 210 is easier to operate.

[0132] (1-11) The first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the X direction. The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the X direction. The length LE of the first end connecting surfaces 63A and 63B between the first inner side surface 61 and the first side surface 25, and the length of the second end connecting surfaces 73A and 73B between the second inner side surface 71 and the second side surface 26 are respectively shorter than the length LC of the first connecting surface 62 in the inclined direction and the length of the second connecting surface 72 in the inclined direction.

[0133] According to this structure, compared to a structure where the lengths LE of the first end connecting surfaces 63A and 63B between the first inner surface 61 and the first side surface 25, and the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 are respectively longer than the lengths LC and LC in the inclined direction of the first connecting surface 62 and the second connecting surface 72, the laser strip 210 is less likely to break when operated. Therefore, the laser strip 210 is easier to operate.

[0134] (1-12) The separation groove 220 constituting the first recess 60 and the second recess 70 is formed by removing the semiconductor layer 40 and the semiconductor substrate 30 of the element body 20 by dry etching.

[0135] According to this structure, compared to using a diamond cutting tool or laser processing to form the first recess 60 and the second recess 70, it is less likely to produce deviations in the width and depth of the separation groove 220. Therefore, even if the laser strip 210 is split, wrinkles can be suppressed from forming on the first side 25 of the semiconductor laser element 10.

[0136] <Second Implementation>

[0137] Reference Figures 14-16 The semiconductor laser element 10 according to the second embodiment will be described. The main difference between the semiconductor laser element 10 of the second embodiment and the semiconductor laser element 10 of the first embodiment is the formation position of the first recess 60 and the second recess 70. Hereinafter, the same reference numerals will be used to denote the constituent elements common to the semiconductor laser element 10 of the first embodiment, and their descriptions will be omitted.

[0138] Figure 14 A simplified three-dimensional structure of the semiconductor laser element 10 according to the second embodiment is shown. Figure 15 Show Figure 14 A simplified top view of the back side 22 of the semiconductor laser element 10. Figure 16 Therefore Figure 15 The cross-sectional structure obtained by cutting the semiconductor laser element 10 along the F16-F16 line is shown in magnification, showing the cross-sectional structure of the first recess 60 and its surrounding area.

[0139] like Figure 14 As shown, a first recess 60 is disposed between a first side surface 25 of the component body 20 and a back surface 22 of the component. A second recess 70 is disposed between a second side surface 26 of the component body 20 and a back surface 22 of the component. Both the first recess 60 and the second recess 70 are recessed toward the interior of the component body 20. The first recess 60 and the second recess 70 are disposed on the semiconductor substrate 30. On the other hand, unlike the first embodiment, neither the first recess 60 nor the second recess 70 is disposed on the semiconductor layer 40.

[0140] like Figure 15 As shown, the first recess 60 includes a first inner side surface 61 facing the same side as the first side surface 25 and a first connecting surface 62 connecting the first inner side surface 61 and the first side surface 25.

[0141] The first inner surface 61 is connected to the back surface 22 of the component. The first inner surface 61 is formed in the Z direction in a portion of the component body 20 adjacent to the back surface 22 of the component. More specifically, the first inner surface 61 is formed in the Z direction in a portion of the semiconductor substrate 30 adjacent to the back surface 32 of the substrate. In one example, the first inner surface 61 is a surface parallel to the first side surface 25.

[0142] like Figure 14 As shown, the first connecting surface 62 is formed relative to the first inner side surface 61 at a position biased towards the component surface 21. The first connecting surface 62 is formed as an inclined surface inclined relative to the component back surface 22 at an angle different from that of the first side surface 25 and the second side surface 26. More specifically, the first connecting surface 62 is inclined towards the first side surface 25 in the Z direction from the first inner side surface 61 to the component surface 21. Figure 16 As shown, the angle θ3 of the first connecting surface 62 relative to the back surface 22 of the component is 50° or more and 60° or less. Preferably, the angle θ3 is 53° or more and 57° or less. The length LC of the first connecting surface 62 in the inclined direction is shorter than the length of the first inner surface 61 in the Z direction. This length LC is, for example, the same as the length LC in the first embodiment.

[0143] The distance W1 between the first side surface 25 and the first inner side surface 61 in a direction perpendicular to the first side surface 25 (Y direction in the second embodiment) is the same as the distance W1 in the first embodiment (see reference). Figure 4 ).exist Figure 16 In the example shown, the distance W1 is greater than 1 μm and less than 5 μm.

[0144] like Figure 15 As shown, the first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the X direction. The first end connecting surfaces 63A and 63B are connected to the back surface 22 of the component. The shape and size of the first end connecting surfaces 63A and 63B in the second embodiment are the same as in the first embodiment. Therefore, the angle of the first end connecting surface 63A relative to the first inner surface 61 is... Figure 7 The angle θ2 shown is the same. Therefore, the angle of the first end connecting surface 63A relative to the first inner surface 61 is larger than the angle θB of the first connecting surface 62 relative to the first inner surface 61. In one example, the angle of the first end connecting surface 63A relative to the first inner surface 61 is 85° or more and 95° or less. In another example, the angle of the first end connecting surface 63A relative to the first inner surface 61 is 87° or more and 93° or less. In another example, the angle of the first end connecting surface 63A relative to the first inner surface 61 is 88° or more and 92° or less. In yet another example, the angle of the first end connecting surface 63A relative to the first inner surface 61 is 89° or more and 91° or less. Furthermore, the first end connecting surface 63B has the same structure as the first end connecting surface 63A.

[0145] The second recess 70 includes a second inner surface 71 facing the same side as the second side 26 and a second connecting surface 72 connecting the second inner surface 71 and the second side 26. The second inner surface 71 is connected to the back surface 22 of the component. The second connecting surface 72 is formed as an inclined surface that is inclined relative to the back surface 22 of the component at an angle different from that of the first side 25 and the second side 26. The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the X direction. The second end connecting surfaces 73A and 73B are connected to the back surface 22 of the component.

[0146] The shape and size of the second recess 70 are the same as those of the first recess 60. That is, the angle of the second connecting surface 72 relative to the back surface 22 of the component is the same as the angle θ3 of the first connecting surface 62 relative to the back surface 22 of the component. Specifically, the angle of the second connecting surface 72 relative to the back surface 22 of the component is 50° or more and 60° or less. Preferably, the angle of the second connecting surface 72 relative to the back surface 22 of the component is 53° or more and 57° or less. The distance between the second side surface 26 and the second inner side surface 71 in the direction perpendicular to the second side surface 26 (Y direction in the second embodiment) is equal to the distance W1. That is, the distance between the second side surface 26 and the second inner side surface 71 in the direction perpendicular to the second side surface 26 is 1 μm or more and 5 μm or less. The angles of the second end connecting surfaces 73A and 73B relative to the second inner side surface 71 are equal to the angle of the first end connecting surface 63A relative to the first inner side surface 61. Therefore, the angles of the second end connecting surfaces 73A and 73B relative to the second inner side surface 71 are larger than the angle of the second connecting surface 72 relative to the second inner side surface 71. The angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 can be, for example, 85° or more and 95° or less, 87° or more and 93° or less, 88° or more and 92° or less, or 89° or more and 91° or less. Furthermore, the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 are equal to the length of the first end connecting surface 63A between the first inner surface 61 and the first side surface 25. Therefore, the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 are shorter than the length of the second connecting surface 72 in the inclined direction. The lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 can also be, for example, 1 μm or more and 5 μm or less.

[0147] (Effect)

[0148] The semiconductor laser element 10 according to the second embodiment can achieve the following effects.

[0149] (2-1) The semiconductor laser element 10 includes: an element body 20 having an element surface 21 and an element back surface 22 facing opposite sides, a first end face 23 and a second end face 24 facing opposite sides in the X direction when viewed from above, and a first side face 25 and a second side face 26 facing opposite sides in the Y direction. The element body 20 emits laser light from the first end face 23; a surface electrode 51 formed on the element surface 21; and a back electrode 52 formed on the element back surface 22. The element body 20 includes: a first recess 60 disposed between the first side face 25 and the element back surface 22, recessed toward the interior of the element body 20; and a second recess 70 disposed between the second side face 26 and the element back surface 22, recessed toward the interior of the element body 20. The first recess 60 includes a first inner side face 61 facing the same side as the first side face 25 and a first connecting surface 62 connecting the first inner side face 61 and the first side face 25. The second recess 70 includes a second inner surface 71 facing the same side as the second side surface 26 and a second connecting surface 72 connecting the second inner surface 71 and the second side surface 26. The first connecting surface 62 and the second connecting surface 72 each include an inclined surface that is inclined relative to the back surface 22 at an angle different from that of the first side surface 25 and the second side surface 26.

[0150] According to this structure, when forming the semiconductor laser element 10 by splitting the laser strip 210, wrinkles on the first side surface 25 and the second side surface 26 can be suppressed by using the first connecting surface 62 and the second connecting surface 72, which are inclined surfaces. Therefore, the quality of the first side surface 25 and the second side surface 26, which are the splitting surfaces, can be improved. In addition, the semiconductor laser element 10 of the second embodiment can obtain the effects according to (1-2) to (1-12).

[0151] <Example of Change>

[0152] The above-described embodiments can be modified as follows. The above-described embodiments and the following modifications can be combined with each other as long as there is no technical contradiction. Furthermore, in the following modifications, the parts common to the above-described embodiments are labeled with the same reference numerals as in the above-described embodiments, and their descriptions are omitted.

[0153] In the first embodiment, the angle θ1 of the first connecting surface 62 of the first recess 60 relative to the component surface 21 and the angle of the second connecting surface 72 of the second recess 70 relative to the component surface 21 can be arbitrarily changed. In one example, the angle θ1 of the first connecting surface 62 relative to the component surface 21 and the angle of the second connecting surface 72 relative to the component surface 21 can be greater than 45° and less than 55°, respectively.

[0154] In the second embodiment, the angle θ3 of the first connecting surface 62 of the first recess 60 relative to the back surface 22 of the component and the angle of the second connecting surface 72 of the second recess 70 relative to the back surface 22 of the component can be arbitrarily changed. In one example, the angle θ3 of the first connecting surface 62 relative to the back surface 22 of the component and the angle of the second connecting surface 72 relative to the back surface 22 of the component can be greater than 45° and less than 55°, respectively.

[0155] In each embodiment, the distance W1 between the first side surface 25 and the first inner side surface 61 in a direction perpendicular to the first inner side surface 61 of the first recess 60, and the distance between the second side surface 26 and the second inner side surface 71 in a direction perpendicular to the second inner side surface 71 of the second recess 70, can be arbitrarily changed.

[0156] In various embodiments, the length LC of the first connecting surface 62 in the inclined direction and the length of the second connecting surface 72 in the inclined direction can be arbitrarily changed. In one example, the length LC of the first connecting surface 62 in the inclined direction and the length of the second connecting surface 72 in the inclined direction can be less than 2 μm or greater than 8 μm.

[0157] In various embodiments, the first recess 60 and the second recess 70 may be formed integrally over the element body 20 in the X direction (first direction).

[0158] In various embodiments, the length LX1 of the first recess 60 in the X direction (first direction) and the length LX2 of the second recess 70 in the X direction (first direction) can be arbitrarily varied. In one example, the length LX1 of the first recess 60 in the X direction may be less than or equal to the length RX1 of the first region 27 of the component body 20 in the X direction (first direction). In another example, the length LX1 of the first recess 60 in the X direction may be less than or equal to the length RX2 of the second region 28 of the component body 20 in the X direction (first direction). In another example, the length LX2 of the second recess 70 in the X direction may be less than or equal to the length RX1 of the first region 27 of the component body 20 in the X direction. In yet another example, the length LX2 of the second recess 70 in the X direction may also be less than or equal to the length RX2 of the second region 28 of the component body 20 in the X direction.

[0159] In addition, the ratio (LX1 / LS) of the length LX1 of the first recessed portion 60 in the X direction to the length LS of the component body 20 in the X direction (first direction) and the ratio (LX2 / LS) of the length LX2 of the second recessed portion 70 in the X direction to the length LS of the component body 20 in the X direction can be less than 5 / 8 or greater than 7 / 8, respectively.

[0160] In various embodiments, the first recess 60 may also be provided in a manner that connects to the first end face 23 or the second end face 24 of the component body 20.

[0161] In various embodiments, the second recess 70 may also be provided in a manner that connects to the first end face 23 or the second end face 24 of the component body 20.

[0162] In various embodiments, the first recess 60 may also be provided in multiple ways that are separated from each other in the X direction (first direction).

[0163] In various embodiments, multiple second recesses 70 may also be provided separately from each other in the X direction (first direction).

[0164] In various embodiments, the angle θ2 of the first end connecting surfaces 63A and 63B of the first recess 60 relative to the first side surface 25 may be less than 85°. In this case, the angle θ2 of the first end connecting surfaces 63A and 63B of the first recess 60 relative to the first side surface 25 may be, for example, less than or equal to the angle θA of the first connecting surface 62 relative to the first inner side surface 61.

[0165] In various embodiments, the angles of the second end connecting surfaces 73A and 73B of the second recess 70 relative to the second side surface 26 may each be less than 85°. In this case, the angles of the second end connecting surfaces 73A and 73B of the second recess 70 relative to the second side surface 26 may be, for example, less than the angle of the second connecting surface 72 relative to the second inner side surface 71.

[0166] In various embodiments, the length LE of the first end connecting surfaces 63A and 63B between the first inner surface 61 and the first side surface 25 can be arbitrarily changed. In one example, the length LE of the first end connecting surfaces 63A and 63B between the first inner surface 61 and the first side surface 25 can be less than 1 μm or greater than 5 μm.

[0167] In various embodiments, the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 can be arbitrarily varied. In one example, the lengths of the second end connecting surfaces 73A and 73B between the second inner surface 71 and the second side surface 26 can be less than 1 μm or greater than 5 μm.

[0168] In various embodiments, the structure of the first connecting surface 62 of the first recess 60 can be arbitrarily changed. In one example, such as Figure 17 As shown, the first connecting surface 62 may also include an inclined surface 62A and a flat surface 62B. The inclined surface 62A is connected to the first inner surface 61. Figure 17The inclined surface 62A shown has the same structure as the first connecting surface 62 in the first embodiment. That is, the first connecting surface 62 can be said to include an inclined surface 62A that is inclined relative to the component surface 21 at an angle different from that of the first side surface 25 and the second side surface 26. A flat surface 62B connects the inclined surface 62A and the first side surface 25. The flat surface 62B faces the same side as the component surface 21, for example. In addition, the second connecting surface 72 of the second recess 70 may also include an inclined surface and a flat surface in the same way as the first connecting surface 62.

[0169] In various embodiments, the semiconductor substrate 30 may also have an angle. In one example, the semiconductor substrate 30 may have an angle of 10°. More specifically, as Figure 18 As shown, the first substrate side 35 and the second substrate side 36 of the semiconductor substrate 30 are inclined relative to a direction orthogonal to the substrate surface 31 (Z direction). Furthermore, the angle θ4 of each of the first substrate side 35 and the second substrate side 36 relative to the direction orthogonal to the substrate surface 31 is 10°. Here, the angle θ4 of each of the first substrate side 35 and the second substrate side 36 relative to the direction orthogonal to the substrate surface 31 being 10° also includes the case where, considering manufacturing errors of the semiconductor substrate 30, the angle of each of the first substrate side 35 and the second substrate side 36 relative to the direction orthogonal to the substrate surface 31 is 8° or more and 12° or less.

[0170] exist Figure 18 In the example shown, the first inner surface 61 of the first recess 60 and the second inner surface 71 of the second recess 70 are inclined relative to a direction orthogonal to the substrate surface 31 (Z direction). Furthermore, the angles of the first inner surface 61 and the second inner surface 71 relative to the direction orthogonal to the substrate surface 31 are the same as angle θ4. That is, the first inner surface 61 is parallel to the first side surface 25, and the second inner surface 71 is parallel to the second side surface 26. In this case, the angle of the first connecting surface 62 relative to the component surface 21 and the angle of the second connecting surface 72 relative to the component surface 21 are both 30° and 40° or less.

[0171] Furthermore, in the second embodiment, the inclined surface 62A of the first connecting surface 62 has the same structure as the first connecting surface 62 in the second embodiment. Therefore, it can be said that the first connecting surface 62 includes an inclined surface that is inclined relative to the back surface 22 of the component at an angle different from that of the first side surface 25 and the second side surface 26. The flat surface, for example, faces the same side as the back surface 22 of the component. In addition, the second connecting surface 72 of the second recess 70 in the second embodiment may also include an inclined surface and a flat surface in the same way as the first connecting surface 62 in the second embodiment.

[0172] In various embodiments, the structure of the p-type semiconductor layer 46 of the semiconductor layer 40 can be arbitrarily changed. In one example, the p-type semiconductor layer 46 may also have a structure including a p-type cladding layer. In this case, the p-type semiconductor layer 46 includes a p-type etch stop layer.

[0173] It is possible to combine one or more of the various examples described in this specification within a technically consistent range.

[0174] The terms "first," "second," and "third" used in this disclosure are used only to distinguish objects, not to rank them.

[0175] In this specification, it should be understood that "at least one of A and B" means "only A or only B or both A and B".

[0176] As used in this disclosure, the term "~above" includes both "~above" and "above". Therefore, for example, the expression "the first element is disposed on the second element" means that in one embodiment the first element is in contact with the second element and is directly disposed on the second element, but in another embodiment the first element is not in contact with the second element and is disposed above the second element. That is, the term "~above" does not exclude the possibility of a structure in which other elements are formed between the first and second elements.

[0177] The Z-direction used in this disclosure does not necessarily need to be vertical, nor does it need to be completely consistent with the vertical direction. Therefore, the various configurations of this disclosure are not limited to the case where the "up" and "down" of the Z-direction described in this specification are the "up" and "down" of the vertical direction. For example, the X-direction can also be vertical, or the Y-direction can also be vertical.

[0178] <Postscript>

[0179] Hereinafter, the technical concepts that can be grasped based on this disclosure will be described. Furthermore, for the purpose of aiding understanding and not limitation, the constituent elements described in the appendix are labeled with reference numerals corresponding to the constituent elements in the above embodiments. The reference numerals are illustrative for the purpose of aiding understanding, and the constituent elements described in each appendix should not be limited to the constituent elements indicated by the reference numerals.

[0180] (Note A1)

[0181] A semiconductor laser element 10 includes:

[0182] The component body 20 has a component surface 21 and a component back surface 22 facing opposite sides, a first end face 23 and a second end face 24 facing opposite sides in a first direction (X direction) when viewed from the thickness direction (Z direction) facing the component surface 21, and a first side face 25 and a second side face 26 facing opposite sides in a second direction (Y direction) orthogonal to the first direction (X direction). The component body 20 emits laser light from the first end face 23.

[0183] Surface electrode 51 is formed on the surface 21 of the element; and

[0184] Back electrode 52 is formed on the back side 22 of the component.

[0185] The component body 20 includes:

[0186] A first recessed portion 60 is disposed between the first side surface 25 and the component surface 21, recessed towards the interior of the component body 20; and

[0187] The second recess 70 is disposed between the second side surface 26 and the component surface 21, and is recessed towards the interior of the component body 20.

[0188] The first recess 60 includes a first inner side surface 61 facing the same side as the first side surface 25 and a first connecting surface 62 connecting the first inner side surface 61 and the first side surface 25.

[0189] The second recess 70 includes a second inner surface 71 facing the same side as the second side surface 26 and a second connecting surface 72 connecting the second inner surface 71 and the second side surface 26.

[0190] The first connecting surface 62 and the second connecting surface 72 each include an inclined surface that is inclined relative to the element surface 21 at an angle different from that of the first side surface 25 and the second side surface 26.

[0191] (Note A2)

[0192] According to the semiconductor laser element described in Appendix A1, among which,

[0193] The angle θ1 of the inclined surface of the first connecting surface 62 relative to the component surface 21 and the angle of the inclined surface of the second connecting surface 72 relative to the component surface 21 are respectively 50° or more and 60° or less.

[0194] (Note A3)

[0195] According to the semiconductor laser element described in appendices A1 or A2, wherein,

[0196] The distance W1 between the first side surface 25 and the first inner side surface 61 in the direction perpendicular to the first inner side surface 61 (Y direction) and the distance between the second side surface 26 and the second inner side surface 71 in the direction perpendicular to the second inner side surface 71 (Y direction) are respectively more than 1 μm and less than 5 μm.

[0197] (Note A4)

[0198] According to any one of the appendices A1 to A3, the semiconductor laser element, among which,

[0199] The length LC of the inclined surface of the first connecting surface 62 in the inclined direction and the length of the inclined surface of the second connecting surface 72 in the inclined direction are respectively more than 2 μm and less than 8 μm.

[0200] (Note A5)

[0201] According to any one of the appendices A1 to A4, the semiconductor laser element, among which,

[0202] The first recessed portion 60 and the second recessed portion 70 are respectively partially disposed on the component body 20 in the first direction (X direction).

[0203] (Note A6)

[0204] According to the semiconductor laser element described in Appendix A5, among which,

[0205] The component body 20 includes:

[0206] The first region 27, in the portion between the first side surface 25 and the element surface 21, does not form the first recess 60 at either end in the first direction (X direction); and

[0207] The second region 28, in the portion between the second side 26 and the component surface 21, does not form the second recess 70 at either end in the first direction (X direction).

[0208] The first recess 60 is provided between the first regions 27 at both ends in the first direction (X direction) in the portion between the first side surface 25 and the component surface 21.

[0209] The second recess 70 is provided between the second regions 28 at both ends in the first direction (X direction) in the portion between the second side 26 and the element surface 21.

[0210] (Note A7)

[0211] According to the semiconductor laser element described in Appendix A6, among which,

[0212] The length LX1 of the first recess 60 in the first direction (X direction) is longer than the length RX1 of the first region 27 in the first direction (X direction).

[0213] The length LX2 of the second recess 70 in the first direction (X direction) is longer than the length RX2 of the second region 28 in the first direction (X direction).

[0214] (Note A8)

[0215] According to the semiconductor laser element described in Appendix A6, among which,

[0216] The ratio LX1 / LS of the length LX1 of the first recessed portion 60 in the first direction (X direction) to the length LS of the component body 20 in the first direction (X direction), and the ratio LX2 / LS of the length LX2 of the second recessed portion 70 in the first direction (X direction) to the length LS of the component body 20 in the first direction (X direction) are both 5 / 8 or more and 7 / 8 or less.

[0217] (Note A9)

[0218] According to any one of the semiconductor laser elements described in notes A6 to A8, among which,

[0219] The first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the first direction (X direction).

[0220] The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the first direction (X direction).

[0221] The angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are respectively larger than the angles θA of the inclined surface of the first connecting surface 62 relative to the first inner surface 61 and the angles of the inclined surface of the second connecting surface 72 relative to the second inner surface 71.

[0222] (Note A10)

[0223] According to the semiconductor laser element described in Appendix A9, among which,

[0224] The angle θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angle of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are greater than 85° and less than 95°.

[0225] (Note A11)

[0226] According to the semiconductor laser element described in Appendix A9, among which,

[0227] The angle θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angle of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are greater than 87° and less than 93°.

[0228] (Note A12)

[0229] According to the semiconductor laser element described in Appendix A9, among which,

[0230] The angle θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angle of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are greater than 88° and less than 92°.

[0231] (Note A13)

[0232] According to any one of the semiconductor laser elements described in notes A6 to A8, among which,

[0233] The first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the first direction (X direction).

[0234] The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the first direction (X direction).

[0235] The lengths LE of the first end connecting surfaces 63A and 63B between the first inner side surface 61 and the first side surface 25, and the lengths of the second end connecting surfaces 73A and 73B between the second inner side surface 71 and the second side surface 26 are respectively shorter than the lengths LC of the inclined surface of the first connecting surface 62 in the inclined direction and the lengths of the inclined surface of the second connecting surface 72 in the inclined direction.

[0236] (Note A14)

[0237] According to the semiconductor laser element described in Appendix A13, among which,

[0238] The lengths of the first end connecting surfaces 63A and 63B between the first inner side surface 61 and the first side surface 25, and the lengths of the second end connecting surfaces 73A and 73B between the second inner side surface 71 and the second side surface 26 are respectively more than 1 μm and less than 5 μm.

[0239] (Note A15)

[0240] According to any one of the appendices A1 to A14, the semiconductor laser element, among which,

[0241] The component body 20 includes:

[0242] Semiconductor substrate 30 has a substrate back surface 32 constituting the back surface 22 of the device and a substrate surface 31 facing a side opposite to the substrate back surface 32; and

[0243] A semiconductor layer 40 is formed on the substrate surface 31, having a surface 41 constituting the element surface 21, and including an active layer 42 for emitting the laser.

[0244] The first recessed portion 60 and the second recessed portion 70 are formed from the semiconductor layer 40 to the semiconductor substrate 30.

[0245] (Note A16)

[0246] According to the semiconductor laser element described in Appendix A15, among which,

[0247] The semiconductor layer 40 includes:

[0248] An n-type cladding layer 45A is disposed on the semiconductor substrate 30 side relative to the active layer 42; and

[0249] p-type cladding layers 46A and 46C are disposed on the opposite side of the n-type cladding layer 45A relative to the active layer 42.

[0250] (Note A17)

[0251] According to the semiconductor laser element described in Appendix A15 or A16, wherein,

[0252] The semiconductor substrate 30 is made of GaAs substrate.

[0253] (Note A18)

[0254] According to any one of the appendices A15 to A17, the semiconductor laser element, among which,

[0255] The semiconductor substrate 30 includes:

[0256] The first substrate end face 33 and the second substrate end face 34 face opposite sides to each other in the first direction (X direction); and

[0257] The first substrate side surface 35 and the second substrate side surface 36 face opposite sides to each other in the second direction (Y direction).

[0258] The angle between the first substrate side surface 35 and the second substrate side surface 36 and the substrate surface 31 is 90°.

[0259] (Note A19)

[0260] According to any one of the appendices A15 to A17, the semiconductor laser element, among which,

[0261] The semiconductor substrate 30 includes:

[0262] The first substrate end face 33 and the second substrate end face 34 face opposite sides to each other in the first direction (X direction); and

[0263] The first substrate side surface 35 and the second substrate side surface 36 face opposite sides to each other in the second direction (Y direction).

[0264] The first substrate side surface 35 and the second substrate side surface 36 are inclined relative to a direction orthogonal to the substrate surface 31 (Z direction).

[0265] The first substrate side surface 35 and the second substrate side surface 36 are each inclined at 10° relative to the direction orthogonal to the substrate surface 31 (Z direction).

[0266] (Note B1)

[0267] A semiconductor laser element 10 includes:

[0268] The component body 20 has a component surface 21 and a component back surface 22 facing opposite sides, a first end face 23 and a second end face 24 facing opposite sides in a first direction (X direction) when viewed from the thickness direction (Z direction) facing the component surface 21, and a first side face 25 and a second side face 26 facing opposite sides in a second direction (Y direction) orthogonal to the first direction (X direction). The component body 20 emits laser light from the first end face 23.

[0269] Surface electrode 51 is formed on the surface 21 of the element; and

[0270] Back electrode 52 is formed on the back side 22 of the component.

[0271] The component body 20 includes:

[0272] A first recessed portion 60 is disposed between the first side surface 25 and the back surface 22 of the component, and is recessed toward the interior of the component body 20; and

[0273] The second recessed portion 70 is disposed between the second side surface 26 and the back surface 22 of the component, and is recessed towards the interior of the component body 20.

[0274] The first recess 60 includes a first inner side surface 61 facing the same side as the first side surface 25 and a first connecting surface 62 connecting the first inner side surface 61 and the first side surface 25.

[0275] The second recess 70 includes a second inner surface 71 facing the same side as the second side surface 26 and a second connecting surface 72 connecting the second inner surface 71 and the second side surface 26.

[0276] The first connecting surface 62 and the second connecting surface 72 each include an inclined surface that is inclined relative to the back surface 22 of the element at an angle different from that of the first side surface 25 and the second side surface 26.

[0277] (Note B2)

[0278] According to the semiconductor laser element described in Appendix B1, among which,

[0279] The angle θ3 of the inclined surface of the first connecting surface 62 relative to the back surface 22 of the component and the angle of the inclined surface of the second connecting surface 72 relative to the back surface 22 of the component are respectively greater than 50° and less than 60°.

[0280] (Note B3)

[0281] According to the semiconductor laser element described in appendices B1 or B2, wherein,

[0282] The distance W1 between the first side surface 25 and the first inner side surface 61 in the direction perpendicular to the first inner side surface 61 (Y direction) and the distance between the second side surface 26 and the second inner side surface 71 in the direction perpendicular to the second inner side surface 71 (Y direction) are respectively more than 1 μm and less than 5 μm.

[0283] (Note B4)

[0284] According to any one of the appendices B1 to B3, the semiconductor laser element, among which,

[0285] The length LC of the inclined surface of the first connecting surface 62 in the inclined direction and the length of the inclined surface of the second connecting surface 72 in the inclined direction are respectively more than 2 μm and less than 8 μm.

[0286] (Note B5)

[0287] According to any one of the appendices B1 to B4, the semiconductor laser element, among which,

[0288] The first recessed portion 60 and the second recessed portion 70 are respectively partially disposed on the component body 20 in the first direction (X direction).

[0289] (Note B6)

[0290] According to the semiconductor laser element described in Appendix B5, among which,

[0291] The component body 20 includes:

[0292] The first region 27, in the portion between the first side surface 25 and the back surface 22 of the element, does not have the first recess 60 formed at both ends in the first direction (X direction); and

[0293] The second region 28, in the portion between the second side 26 and the back surface 22 of the component, does not have the second recess 70 formed at either end in the first direction (X direction).

[0294] The first recess 60 is provided between the first regions 27 at both ends in the first direction (X direction) in the portion between the first side surface 25 and the back surface 22 of the element.

[0295] The second recess 70 is provided between the second regions 28 at both ends in the first direction (X direction) in the portion between the second side 26 and the back surface 22 of the element.

[0296] (Note B7)

[0297] According to the semiconductor laser element described in Appendix B6, among which,

[0298] The length LX1 of the first recess 60 in the first direction (X direction) is longer than the length RX1 of the first region 27 in the first direction (X direction).

[0299] The length LX2 of the second recess 70 in the first direction (X direction) is longer than the length RX2 of the second region 28 in the first direction (X direction).

[0300] (Note B8)

[0301] According to the semiconductor laser element described in Appendix B6, among which,

[0302] The semiconductor laser element described in Appendix B6 has a length LX1 of the first recessed portion 60 in the first direction (X direction) relative to the length LS of the element body 20 in the first direction (X direction) and a length LX2 of the second recessed portion 70 in the first direction (X direction) relative to the length LS of the element body 20 in the first direction (X direction) of 5 / 8 or more and 7 / 8 or less.

[0303] (Note B9)

[0304] According to any one of the notes B6 to B8, the semiconductor laser element, among which,

[0305] The first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the first direction (X direction).

[0306] The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the first direction (X direction).

[0307] The angles θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angles of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are respectively larger than the angles θB of the inclined surface of the first connecting surface 62 relative to the first inner surface 61 and the angles of the inclined surface of the second connecting surface 72 relative to the second inner surface 71.

[0308] (Note B10)

[0309] According to the semiconductor laser element described in Appendix B9, among which,

[0310] The angle θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angle of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are greater than 85° and less than 95°.

[0311] (Note B11)

[0312] According to the semiconductor laser element described in Appendix B9, among which,

[0313] The angle θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angle of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are greater than 87° and less than 93°.

[0314] (Note B12)

[0315] According to the semiconductor laser element described in Appendix B9, among which,

[0316] The angle θ2 of the first end connecting surfaces 63A and 63B relative to the first inner surface 61 and the angle of the second end connecting surfaces 73A and 73B relative to the second inner surface 71 are greater than 88° and less than 92°.

[0317] (Note B13)

[0318] According to any one of the notes B6 to B8, the semiconductor laser element, among which,

[0319] The first recess 60 includes first end connecting surfaces 63A and 63B formed at both ends in the first direction (X direction).

[0320] The second recess 70 includes second end connecting surfaces 73A and 73B formed at both ends in the first direction (X direction).

[0321] The lengths LE of the first end connecting surfaces 63A and 63B between the first inner side surface 61 and the first side surface 25, and the lengths of the second end connecting surfaces 73A and 73B between the second inner side surface 71 and the second side surface 26 are respectively shorter than the lengths LC of the inclined surface of the first connecting surface 62 in the inclined direction and the lengths of the inclined surface of the second connecting surface 72 in the inclined direction.

[0322] (Note B14)

[0323] According to the semiconductor laser element described in Appendix B13, among which,

[0324] The lengths of the first end connecting surfaces 63A and 63B between the first inner side surface 61 and the first side surface 25, and the lengths of the second end connecting surfaces 73A and 73B between the second inner side surface 71 and the second side surface 26 are respectively more than 1 μm and less than 5 μm.

[0325] (Note B15)

[0326] According to any one of the appendices B1 to B14, the semiconductor laser element, among which,

[0327] The component body 20 includes:

[0328] Semiconductor substrate 30 has a substrate back surface 32 constituting the back surface 22 of the device and a substrate surface 31 facing a side opposite to the substrate back surface 32; and

[0329] A semiconductor layer 40 is formed on the substrate surface 31, having a surface 41 constituting the element surface 21, and including an active layer 42 for emitting the laser.

[0330] The first recess 60 is formed between the back surface 32 of the substrate and the side surface 35 of the substrate.

[0331] The second recess 70 is formed between the back surface 32 of the substrate and the side surface 36 of the substrate.

[0332] (Note B16)

[0333] According to the semiconductor laser element described in Appendix B15, among which,

[0334] The semiconductor layer 40 includes:

[0335] An n-type cladding layer 45A is disposed on the semiconductor substrate 30 side relative to the active layer 42; and

[0336] p-type cladding layers 46A and 46C are disposed on the opposite side of the n-type cladding layer 45A relative to the active layer 42.

[0337] (Note B17)

[0338] According to the semiconductor laser element described in appendices B15 or B16, wherein,

[0339] The semiconductor substrate 30 is made of GaAs substrate.

[0340] (Note B18)

[0341] According to any one of the appendices B15 to B17, the semiconductor laser element, among which,

[0342] The semiconductor substrate 30 includes:

[0343] The first substrate end face 33 and the second substrate end face 34 face opposite sides to each other in the first direction (X direction); and

[0344] The first substrate side surface 35 and the second substrate side surface 36 face opposite sides to each other in the second direction (Y direction).

[0345] The angle between the first substrate side surface 35 and the second substrate side surface 36 and the substrate surface 31 is 90°.

[0346] (Note B19)

[0347] According to any one of the appendices B15 to B17, the semiconductor laser element, among which,

[0348] The semiconductor substrate 30 includes:

[0349] The first substrate end face 33 and the second substrate end face 34 face opposite sides to each other in the first direction (X direction); and

[0350] The first substrate side surface 35 and the second substrate side surface 36 face opposite sides to each other in the second direction (Y direction).

[0351] The first substrate side surface 35 and the second substrate side surface 36 are inclined relative to a direction orthogonal to the substrate surface 31 (Z direction).

[0352] The first substrate side surface 35 and the second substrate side surface 36 are each inclined at 10° relative to the direction orthogonal to the substrate surface 31 (Z direction).

[0353] The above description is merely illustrative. Those skilled in the art will recognize that many other possible combinations and substitutions exist besides the constituent elements and methods (manufacturing processes) listed for the purpose of illustrating the technology of this disclosure. This disclosure is intended to include all substitutions, modifications, and alterations encompassed within the scope of this disclosure, including the claims.

[0354] Symbol Explanation

[0355] 10—Semiconductor laser element; 20—Element body; 21—Element surface; 22—Element back side; 23—First end face; 24—Second end face; 25—First side face; 26—Second side face; 27—First region; 28—Second region; 30—Semiconductor substrate; 31—Substrate surface; 32—Substrate back side; 33—First substrate end face; 34—Second substrate end face; 35—First substrate side face; 36—Second substrate side face; 40—Semiconductor layer; 41—Surface; 42—Active layer; 43—n-side guiding layer; 44—p-side guiding layer; 45—n-type semiconductor layer; 45A—n-type cladding layer; 46—p-type semiconductor layer; 46A—First p-type cladding layer. Layer, 46B—First p-type etch stop layer, 46C—Second p-type cladding layer, 46D—Second p-type etch stop layer, 46E—P-type capping layer, 46F—P-type contact layer, 47—Ridge, 48—Current stencil layer, 51—Surface electrode, 52—Back electrode, 60—First recess, 61—First inner surface, 62—First connection surface, 62A—Sloping surface, 62B—Flat surface, 63A, 63B—First end connection surface, 70—Second recess, 71—Second inner surface, 72—Second connection surface, 73A, 73B—Second end connection surface, 200—Semiconductor wafer, 201—Wafer surface, 202—Wafer back side, 210 —Laser strip, 211, 212—Side, 220—Separation groove, 221—First separation side, 222—Second separation side, 223—First conical surface, 224—Second conical surface, 230—Separator, LC—Length of the first connecting surface in the inclined direction, LE—Length of the first end connecting surface between the first inner side and the first side, LS—Length of the component body in the X direction, LX1—Length of the first recess in the X direction, LX2—Length of the second recess in the X direction, LZ1—Length of the first recess in the Z direction, LZC—Length of the portion of the first inner side closer to the center than the two ends in the X direction in the Z direction, L ZE—Length of the two ends of the first inner side in the X direction in the Z direction; RX1—Length of the first region in the X direction; RX2—Length of the second region in the X direction; W1—Distance between the first side and the first inner side in the direction perpendicular to the first side; θ1—Angle of the first connecting surface relative to the component surface; θ2—Angle of the first end connecting surface relative to the first inner side; θ3—Angle of the first connecting surface relative to the back of the component; θ4—Angle of the first substrate side and the second substrate side relative to the direction orthogonal to the substrate surface; θA—Angle of the first connecting surface relative to the first inner side; θB—Angle of the first connecting surface relative to the first inner side.

Claims

1. A semiconductor laser element, comprising: The component body has a component surface and a component back surface facing opposite sides, a first end face and a second end face facing opposite sides in a first direction when viewed from the thickness direction facing the component surface, and a first side face and a second side face facing opposite sides in a second direction orthogonal to the first direction. The component body emits laser light from the first end face. Surface electrodes are formed on the surface of the component; as well as Back electrode, formed on the back of the element, The main body of the component includes: The first recess is disposed between the first side surface and the surface of the component, and is recessed toward the interior of the component body; as well as The second recess is disposed between the second side surface and the surface of the component, and is recessed towards the interior of the component body. The first recess includes a first inner side facing the same side as the first side and a first connecting surface connecting the first inner side and the first side. The second recess includes a second inner side facing the same side as the second side and a second connecting surface connecting the second inner side and the second side. The first connecting surface and the second connecting surface each include an inclined surface that is inclined relative to the surface of the element at an angle different from that of the first side surface and the second side surface.

2. The semiconductor laser element according to claim 1, wherein, The angle between the inclined surface of the first connecting surface and the surface of the component, and the angle between the inclined surface of the second connecting surface and the surface of the component, are respectively greater than 50° and less than 60°.

3. The semiconductor laser element according to claim 1 or 2, wherein, The distance between the first side and the first inner side in a direction perpendicular to the first inner side, and the distance between the second side and the second inner side in a direction perpendicular to the second inner side, are respectively more than 1 μm and less than 5 μm.

4. The semiconductor laser element according to any one of claims 1 to 3, wherein, The length of the inclined surface of the first connecting surface in the inclined direction and the length of the inclined surface of the second connecting surface in the inclined direction are respectively more than 2 μm and less than 8 μm.

5. The semiconductor laser element according to any one of claims 1 to 4, wherein, The first recess and the second recess are respectively partially disposed on the main body of the element in the first direction.

6. The semiconductor laser element according to claim 5, wherein, The main body of the component includes: In the first region, the first recess is not formed at either end of the portion between the first side and the surface of the element in the first direction; and In the second region, the second recess is not formed at either end of the portion between the second side and the surface of the element in the first direction. The first recess is provided between the first regions at both ends in the first direction in the portion between the first side and the surface of the element. The second recess is provided between the second regions at both ends in the first direction in the portion between the second side and the surface of the element.

7. The semiconductor laser element according to claim 6, wherein, The length of the first recess in the first direction is longer than the length of the first region in the first direction. The length of the second recess in the first direction is longer than the length of the second region in the first direction.

8. The semiconductor laser element according to claim 6, wherein, The ratio of the length of the first recess in the first direction to the length of the component body in the first direction, and the ratio of the length of the second recess in the first direction to the length of the component body in the first direction, are respectively 5 / 8 or more and 7 / 8 or less.

9. The semiconductor laser element according to any one of claims 6 to 8, wherein, The first recess includes first end connecting surfaces formed at both ends in the first direction. The second recess includes second end connecting surfaces formed at both ends in the first direction. The angles of the first end connecting surface relative to the first inner surface and the second end connecting surface relative to the second inner surface are respectively larger than the angles of the inclined surface of the first connecting surface relative to the first inner surface and the angles of the inclined surface of the second connecting surface relative to the second inner surface.

10. The semiconductor laser element according to claim 9, wherein, The angle between the first end connecting surface and the first inner surface and the angle between the second end connecting surface and the second inner surface are greater than 85° and less than 95°.

11. The semiconductor laser element according to claim 9, wherein, The angle between the first end connecting surface and the first inner surface and the angle between the second end connecting surface and the second inner surface are greater than 87° and less than 93°.

12. The semiconductor laser element according to claim 9, wherein, The angle between the first end connecting surface and the first inner surface and the angle between the second end connecting surface and the second inner surface are greater than 88° and less than 92°.

13. The semiconductor laser element according to any one of claims 6 to 8, wherein, The first recess includes first end connecting surfaces formed at both ends in the first direction. The second recess includes second end connecting surfaces formed at both ends in the first direction. The length of the first end connecting surface between the first inner side and the first side and the length of the second end connecting surface between the second inner side and the second side are respectively shorter than the length of the inclined surface of the first connecting surface in the inclined direction and the length of the inclined surface of the second connecting surface in the inclined direction.

14. The semiconductor laser element according to claim 13, wherein, The length of the first end connection surface between the first inner side and the first side and the length of the second end connection surface between the second inner side and the second side are respectively more than 1 μm and less than 5 μm.

15. The semiconductor laser element according to any one of claims 1 to 14, wherein, The main body of the component includes: A semiconductor substrate having a substrate back side forming the back side of the device and a substrate surface facing a side opposite to the substrate back side; and A semiconductor layer is formed on the surface of the substrate, having a surface constituting the surface of the element, and including an active layer that emits the laser. The first recess and the second recess are formed from the semiconductor layer to the semiconductor substrate.

16. The semiconductor laser element according to claim 15, wherein, The semiconductor layer includes: An n-type cladding layer is disposed on the semiconductor substrate side relative to the active layer; and The p-type cladding is disposed on the opposite side of the n-type cladding relative to the active layer.

17. The semiconductor laser element according to claim 15 or 16, wherein, The semiconductor substrate is made of GaAs substrate.

18. The semiconductor laser element according to any one of claims 15 to 17, wherein, The semiconductor substrate includes: The end faces of the first substrate and the end faces of the second substrate are oriented towards opposite sides in the first direction; and The side surfaces of the first substrate and the second substrate face opposite sides to each other in the second direction. The angle between the side surface of the first substrate and the side surface of the second substrate and the surface of the substrate is 90°.

19. The semiconductor laser element according to any one of claims 15 to 17, wherein, The semiconductor substrate includes: The end faces of the first substrate and the end faces of the second substrate are oriented towards opposite sides in the first direction; and The side surfaces of the first substrate and the second substrate face opposite sides to each other in the second direction. The side surfaces of the first substrate and the second substrate are inclined relative to a direction orthogonal to the surface of the substrate. The first substrate side and the second substrate side are each inclined at 10° relative to a direction orthogonal to the substrate surface.

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