Plasma processing apparatus

Abstract

Provided is a plasma processing device in which the operating cost of a disinfestation device is minimized. This plasma processing apparatus is provided with: a processing chamber in which a sample is subjected to plasma processing; a high-frequency power supply for supplying high-frequency power for generating plasma; a sample stage on which a sample is placed; a disinfestation device for decomposing the exhaust gas from the treatment chamber; and a control device for controlling the pest control device. The control device controls the disinfestation device according to the operating conditions of the disinfestation device specified on the basis of the global warming coefficient per unit time calculated using the etching conditions.

Description

Technical Field

[0001] This invention relates to plasma treatment apparatus, and in particular to plasma treatment apparatus that is applicable to equipment for removing waste gases generated during the manufacturing process of semiconductor devices. Background Technology

[0002] To continuously improve the functionality and performance of integrated circuit chips, transistor miniaturization is indispensable. According to the 2022 edition of the IRDS (International Roadmap for Devices and Systems), the current benchmark for miniaturization of a pattern, known as a technology node, is the 2nm node, projected to reach 1.5nm by 2028, and then 0.5nm by 2037. The total dimension of the actual transistor wiring width and spacing is called the pitch, and half of it is called the half pitch (HP). Generally, this is HP10nm for a 2nm technology node and HP8nm for a 1.5nm technology node.

[0003] Furthermore, the structure has evolved from GAA (Gate All Around) to CFET (Complementary Field-Effect Transistor), and the adaptation to new materials has been discussed. With this evolution in transistor miniaturization, structure, and materials, the number of manufacturing steps in semiconductor manufacturing equipment continues to increase. Accompanying this is the increasing emission of greenhouse gases (GHG) used in semiconductor manufacturing equipment. Therefore, the semiconductor industry is intensifying its efforts to reduce GHG emissions, aiming for carbon neutrality by achieving zero overall GHG emissions.

[0004] GHG used in semiconductor manufacturing equipment is quantified using the Global Warming Potential (GWP), which is reported periodically (every 5 or 6 years) by the Intergovernmental Panel on Climate Change (IPCC). Examples of high-GWP gases include nitrogen trifluoride (NF3), sulfur hexafluoride (SF6), perfluorocarbons (PFCs), and hydrofluorocarbons (HFCs).

[0005] The urgent task is to reduce GHG emissions. One method for this reduction is to decompose and render the waste gases harmless using high-temperature combustion or plasma-based purification equipment. For example, NF3 decomposes at around 800°C, while tetrafluoromethane (CF4), considered the most difficult PFC to decompose, requires temperatures above 1400°C. However, operating high-temperature combustion or plasma-based purification equipment requires large amounts of electricity and water, which itself contributes to carbon dioxide production and increases operating costs.

[0006] On the other hand, there are also methods to render waste gas harmless using dry treatment equipment. For example, the combination of treatment agents (chemicals) is changed according to the type of waste gas, and the waste gas is fixed to the treatment agent through a chemical reaction. However, when disposing of the treatment agent that has fixed the waste gas, sometimes a final treatment method that promotes the generation of carbon dioxide is required.

[0007] Patent document 1 discloses the following method: inputting information about etching gas and waste gas into the purifying equipment to control the purifying capacity, thereby reducing the operating cost of the purifying equipment.

[0008] Existing technical documents

[0009] Patent documents

[0010] Patent Document 1: JP 2002-353197 Summary of the Invention

[0011] The problem that the invention aims to solve

[0012] In existing semiconductor manufacturing equipment, for example, plasma etching equipment and decontamination equipment operate independently, with the decontamination equipment operating continuously even when the etching equipment is not etching the wafer, leading to increased operating costs. According to the technology in Patent Document 1, the decontamination capacity of the decontamination equipment is determined based on information about the gas introduced into the etching chamber. Therefore, the processing temperature and water volume of the decontamination equipment can be controlled based on whether GHG is introduced into the etching equipment, reducing the operating costs of the decontamination equipment.

[0013] However, this technology fails to minimize operating costs because it does not control the gas filtration equipment based on GWP information, which includes gases other than GHG. Specifically, when the gas introduced into the etching chamber is a mixture of GHG and non-GHG gases, the overall GWP information of the mixed gas introduced into the etching chamber per unit time is not considered. Consequently, the filtration equipment operates excessively, failing to minimize operating costs and resulting in inefficient use of the filtration equipment.

[0014] Furthermore, according to the technology in Patent Document 1, it is not envisioned that the GHG introduced into the etching chamber be decomposed and discharged via plasma. That is, it is not considered that GHG be introduced into the etching chamber and then reduced by plasma decomposition. Therefore, the information regarding the reduction due to decomposition is not reflected in the removal capacity of the toxicology equipment, resulting in inefficient use of the toxicology equipment. Next, according to the technology in Patent Document 1, it is not envisioned that the GHG introduced into the etching chamber be decomposed and then recombined via plasma, resulting in a significant portion of the original GHG gas becoming other types of GHG and being discharged. Simultaneously, it is not envisioned that non-GHG gases or low-GWP gases introduced into the etching chamber be decomposed and then recombined via plasma, resulting in a significant portion of the original gases becoming GHG and being discharged. Therefore, this information is not reflected in the removal capacity of the toxicology equipment, resulting in inefficient use of the toxicology equipment.

[0015] Methods for solving problems

[0016] To address the aforementioned issues, a representative plasma treatment apparatus of the present invention comprises: a control device for controlling the exhaust gas decomposition capability of a toxic gas treatment device, which appropriately controls the exhaust gas decomposition capability of the toxic gas treatment device by calculating the GWP information per unit time based on information about the GHG or a mixture of gases other than GHG introduced into the etching chamber.

[0017] The effects of the invention

[0018] According to the present invention, a plasma treatment device is provided that minimizes the operating cost of the pest control equipment.

[0019] Other issues, structures, and effects not described above will be clarified through the following description of the implementation methods. Attached Figure Description

[0020] Figure 1 This is a diagram showing the structure of the plasma processing apparatus in Examples 1, 2, and 3.

[0021] Figure 2 This is a graph representing the GWP value of the extracted GHG.

[0022] Figure 3 This is a diagram illustrating the method for calculating GWP per unit time in Example 1.

[0023] Figure 4 This is a graph showing the change in the amount of CHF3 gas as the microwave output changes when the CHF3 gas flow rate is 150 [ml / min] and the processing chamber pressure is 1.0 [Pa] in Example 2.

[0024] Figure 5This is a graph showing the change in the amount of CHF3 gas as the pressure in the processing chamber changes when the CHF3 gas flow rate is 150 [ml / min] and the microwave output is 1000W in Example 2.

[0025] Figure 6 This is a graph showing the changes in the amount of CHF3 gas and CF4 gas when the microwave output is adjusted to CHF3 gas flow rate of 150 [ml / min] and chamber pressure of 1.0 [Pa] in Example 3. Detailed Implementation

[0026] The various embodiments of the present invention will now be described with reference to the accompanying drawings. Figure 1 The structure of a plasma processing apparatus 10 according to an embodiment of the present invention is shown. For example... Figure 1 As shown, the plasma treatment apparatus 10 has the following structures 101-119, including an etching apparatus 101, a pest control device 114, and a control device 115.

[0027] The etching apparatus 101 is a microwave plasma etching apparatus (hereinafter referred to as the "etching apparatus") using ECR (Electron Cyclotron Resonance) technology. Etching gas 104 is supplied to the processing chamber 103 from the gas supply device 102, and is exhausted via a turbomolecular pump 106 and a subsequent dry pump 107 through an exhaust speed variable valve 105 of the etching processing chamber 103. The pressure of the etching processing chamber (hereinafter also referred to as the processing chamber) 103 is adjusted to the desired pressure by the exhaust variable valve 105.

[0028] To supply high-frequency power for plasma generation to the processing chamber 103, an electromagnetic wave generating power supply 108, serving as a microwave power supply (high-frequency power supply), is installed above the processing chamber 103. A magnetic field generating coil 109 is provided outside the etching processing chamber 103 to generate a magnetic field. The electromagnetic waves oscillating from the electromagnetic wave generating power supply 108 interact with the magnetic field generated by the magnetic field generating coil 109, generating high-density plasma 110 within the processing chamber 103. This plasma then performs etching (plasma processing) on ​​the sample, i.e., the wafer 112, positioned on the sample stage, i.e., the sample mounting electrode 111. A high-frequency bias power supply 113 is connected to the sample mounting electrode 111.

[0029] On the other hand, the gas exhausted by the dry pump 107 is treated by a purifying device 114, which appropriately controls its waste gas decomposition capacity based on purifying device control information 116 sent from the control device 115. The control device 115 is input with etching gas information 117 sent from the gas supply device 102 and OES information 119 measured from the high-density plasma 110 by the OES (Optical Emission Spectrometer) 118. Next, an embodiment of the plasma processing apparatus 10 utilizing the etching device 101 described above will be described.

[0030]

Example 1

[0031] As an example 1, the method is described as follows: When the gas introduced into the etching chamber 103 is a mixture of GHG and non-GHG gases, the exhaust gas decomposition capacity (operating conditions) of the purifying device 114 is appropriately controlled, taking into account the total GWP information of the mixed gas introduced into the etching chamber 103 per unit time. That is, the control device 115 can control the purifying device 114 based on the operating conditions of the purifying device 114 specified based on the global warming coefficient (GWP) per unit time and the exhaust gas data. As described later, the global warming coefficient (GWP) per unit time is calculated using the gas flow rate, the global warming coefficient of the gas, the gas density, and the gas mass. Furthermore, the exhaust gas data, as described later, can be obtained upstream of the turbomolecular pump 106, upstream of the dry pump 107, or upstream of the purifying device 114.

[0032] exist Figure 2 The GWP value of GHG is shown, extracted from the aforementioned IPCC report. This value, published in the 5th IPCC Report in 2013, is a 100-year value, representing the cumulative radiative energy released into the atmosphere by a unit mass (e.g., 1 kg) of GHG over 100 years (i.e., the impact on global warming) as a ratio to CO2. Thus, SF6, for example, contributes to a greenhouse effect 23,500 times greater than CO2.

[0033] Next, in Figure 3This section illustrates the method for calculating the GWP per unit time. As an example of etching gases, a mixture of three gases—argon (Ar), trifluoromethane (CHF3), and sulfur hexafluoride (SF6)—is described. First, based on the individual gas flow rates (e.g., 100 / 150 / 15 ml / min), the flow ratios are calculated, with the total flow rate set to 1: 0.38 / 0.57 / 0.06 (rounding up to the third decimal place). Next, the flow ratio GWP is calculated as 0 / 7019 / 1330, by multiplying the flow ratio of each gas by its GWP (0 / 12400 / 23500, assuming it is 0 for gases other than GHG, such as Ar). Finally, the total flow rate GWP is calculated as 8349, based on the sum of the flow ratio GWPs. Next, the gas densities of each gas are calculated as 1.65 / 2.90 / 6.50 g / L, referencing values ​​published by gas manufacturers. Next, the GWP mass is calculated based on the gas flow rate and gas density: 0 / 0.435 / 0.098 [g / min]. Then, the total GWP mass is calculated based on the sum of the GWP masses. Finally, the GWP per unit time is calculated based on the total GWP mass and the total flow rate ratio GWP: 4.45 [GWP / min]. That is, this GWP per unit time becomes the overall GWP information for the mixed gas introduced into the etching chamber, a value based on a GWP that allows for quantitative comparison of the mixed gas composed of GHG and non-GHG gases.

[0034] This calculation shows the result from receiving to receiving Figure 1 The etching gas information 117 sent by the gas supply device 102 is controlled by the control device 115, and input as hazard removal device control information 116 into the hazard removal equipment 114, and appropriately controlled to a predetermined exhaust gas decomposition capacity. That is, the control device 115 has a table or database of exhaust gas decomposition capacity as operating conditions, which is predetermined based on the global warming coefficient GWP and exhaust gas data per unit time, and is configured to retrieve the table or database of exhaust gas decomposition capacity based on the global warming coefficient GWP and exhaust gas data per unit time, extract the desired operating conditions, and input them into the hazard removal equipment 114.

[0035] in addition, Figure 1 Not shown in the diagram, but the control device 115 can also receive gas information sent from the device control unit of the etching device 101. Alternatively, Figure 1 Although not shown in the figure, it can also be calculated by the device control device based on the gas information of the device control device controlling the etching device, and input into the pest control device 114 as the pest control device control information 116.

[0036] in addition, Figure 3Although not shown in the figure, the decomposition temperature and decomposition rate of each GHG corresponding to the pest control device 114 can be taken into account when calculating.

[0037] By means of the method of this embodiment, when the gas introduced into the etching chamber 103 in the plasma processing apparatus 10 is a mixture of GHG and non-GHG gases, by taking into account the GWP information of the total mixed gas introduced into the etching apparatus 101 per unit time, it is possible to prevent the purging device 114 from being overworked, and to achieve the use of the purging device 114 with high efficiency and minimal operating costs.

[0038]

Example 2

[0039] Next, as Example 2, the following method will be described: Based on prior knowledge and numerical analysis of the situation where GHG introduced into the etching chamber 103 is decomposed by plasma, the amount of introduced gas is reduced, and then discharged, the exhaust gas decomposition capacity of the purifying device 114 is appropriately controlled. That is, the control device 115 can control the purifying device 114 by specifying the operating conditions of the purifying device 114 based on the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma emission data. Furthermore, the control device 115 can control the purifying device 114 by specifying the operating conditions based on the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma decomposition rate data calculated using etching conditions. As will be described later, the plasma decomposition rate data can be calculated using the pressure of the processing chamber 103, high-frequency power, plasma emission data, and exhaust gas data.

[0040] As an example of plasma conditions, in Figure 4 The change in the amount of CHF3 gas is shown when CHF3 gas at a rate of 150 ml / min is introduced into the etching chamber 103 and the chamber pressure is set to 1.0 Pa. Although not illustrated, the amount of CHF3 gas was measured using a device set to... Figure 1 The measurement is performed using a Fourier Transform Infrared spectrometer (FTIR) between the dry pump 107 and the hazard removal device 114. FTIR is a commonly used waste gas measurement device in etching equipment and CVD (Chemical Vapor Deposition) equipment, which can simultaneously and quantitatively measure the concentration of multiple types of waste gases.

[0041] Regarding the amount of CHF3 gas, the following variation in gas quantity is shown: With microwave output at 0 [W] (i.e., plasma off), the amount of CHF3 gas introduced into the etching chamber 103 that is directly discharged without passing through the plasma is set to 100%. From this point onward, the microwave output is increased. Thus, it can be seen that by increasing the microwave output, i.e., increasing the plasma density and degree of dissociation, the decomposition of GHG introduced into the etching apparatus 103 (plasma decomposition rate) is controlled, and the amount of introduced gas is reduced by plasma discharge.

[0042] Next, in Figure 5 The diagram shows the change in the amount of CHF3 gas introduced into the etching chamber 103 as an example of plasma conditions, with a microwave output of 1000 W. Similarly, the diagram shows the change in the amount of gas discharged when the plasma is turned off (set to 100%), and then the change in the processing chamber pressure thereafter. Thus, it can be seen that by increasing the processing chamber pressure, i.e., increasing the residence time of the gas in the processing chamber 103, the decomposition of GHG introduced into the etching chamber 103 (plasma decomposition rate) is controlled, and the amount of gas introduced is discharged as the plasma decreases.

[0043] The above uses two examples ( Figure 4 , Figure 5 The control device 115 can pre-know and quantify the situation where GHG introduced into the etching chamber 103 is decomposed by plasma controlled according to microwave output and chamber pressure, the amount of introduced gas is reduced, and it is discharged. Furthermore, while microwave output and chamber pressure have been specified above, the control of changes in conditions of other plasma control parameters, such as the high-frequency bias power supply and the magnetic field generating coil, can also be pre-knowledged and quantified. That is, the control device 115 can control the purifying equipment 114 based on operating conditions predetermined by the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma emission data. The plasma emission data can be obtained through microwave output, chamber pressure, high-frequency bias power supply, and magnetic field generating coil conditions, which are parameters for controlling the plasma. Here, the control device 115 has a table or database of exhaust gas decomposition capabilities, etc., pre-determined as operating conditions based on the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma emission data. The control device 115 is configured to retrieve tables or databases of exhaust gas decomposition capacity based on the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma luminescence data, extract the desired operating conditions, and output them to the pollution removal equipment 114.

[0044] Next, regarding the gas whose reduction amount is pre-quantified, the discharge gas flow rate is calculated based on the discharge ratio. For example, if using... Figure 4 The value is calculated based on the amount of CHF3 gas discharged after plasma treatment. Since the amount of CHF3 gas discharged at 1000 W is 50%, the discharged CHF3 gas is 50% of the introduced 150 ml / min, i.e., 75 ml / min. Furthermore, the above is an example of CHF3 gas alone. In the case of other types of GHG, and in the case of a mixture of two or more types of GHG, or a mixture containing two or more types of GHG and a non-GHG gas, the amount of gas discharged can also be known and quantified in advance, and the discharge amount can be calculated. That is, the control device 115 can control the purifying equipment 114 based on operating conditions predetermined by the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma decomposition rate calculated using etching conditions. Here, the control device 115 has a table or database of exhaust gas decomposition capabilities predetermined as operating conditions based on the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma decomposition rate calculated using etching conditions. The control device 115 is configured to retrieve tables or databases of exhaust gas decomposition capacity based on the global warming coefficient (GWP) per unit time, exhaust gas data, and plasma decomposition rate data calculated using etching conditions, extract the desired operating conditions, and input them into the hazard removal equipment 114.

[0045] Thus, the amount of gas emitted after plasma treatment based on the desired etching conditions is measured and calculated in advance, and a table of gas emission values ​​corresponding to the etching conditions is set up in [the relevant database / system]. Figure 1 The control device 115 shown, or, although not shown, a device control device provided in the control of the etching apparatus. Using the numerical table of gas discharge volume, according to the method described in Example 1, Figure 3 The gas flow rate is replaced by the gas discharge rate, and the GWP per unit time is calculated similarly. This calculation is performed from the received gas flow rate to the discharged gas flow rate. Figure 1 The etching gas information 117 sent by the gas supply device 102 is controlled by the control device 115 and input into the purifying device 114 as purifying device control information 116. The purifying device 114 is appropriately controlled to decompose the waste gas based on the waste gas decomposition capacity predetermined by the purifying device control information 116.

[0046] in addition, Figure 1 Not shown in the diagram, but the control device 115 can also receive gas information sent from the device control unit of the etching device 101. Alternatively, Figure 1 Although not shown in the figure, it can also be calculated by the device control device based on the gas information of the device control device controlling the etching device, and input into the pest control device 114 as the pest control device control information 116.

[0047] in addition, Figure 3 Although not shown in the figure, the decomposition temperature and decomposition rate of each GHG corresponding to the pest control device 114 can be taken into account when calculating.

[0048] By means of the method in this embodiment, in the plasma processing apparatus 10, based on the understanding that the GHG introduced into the etching processing chamber is decomposed by plasma, the amount of introduced gas is reduced and discharged, the total GWP information of the mixed gas discharged from the etching apparatus 101 per unit time is considered. Therefore, excessive operation of the hazard removal equipment 114 can be prevented, and the use of the hazard removal equipment 114 with high efficiency and minimal operating costs can be achieved.

[0049]

Example 3

[0050] Next, as Example 3, a method for appropriately controlling the exhaust gas decomposition capacity of the hazard removal device 114 based on prior knowledge and numericalization of the following two factors will be described.

[0051] 1) The GHG introduced into the etching chamber 101 is decomposed by plasma and then recombined, and most of the original GHG gas is transformed into other GHG and discharged.

[0052] 2) The gas that is not GHG or has low GWP introduced into the etching device 101 is decomposed by plasma and then recombined, and a fraction of the original gas becomes GHG and is discharged.

[0053] That is, the control device 115 controls the pest control equipment 114 based on operating conditions specified by the global warming coefficient (GWP) per unit time, exhaust gas data, plasma luminescence data, and plasma decomposition rate calculated using etching conditions.

[0054] As an example of plasma conditions, in Figure 6 The diagram illustrates the change in the amount of CHF3 gas introduced into the etching chamber 103 at a flow rate of 150 ml / min, with the chamber pressure set to 1.0 Pa. This is consistent with the plasma conditions described in Example 2. Figure 4 The same applies. However, in this embodiment, the behavior of the CF4 gas quantity is illustrated in conjunction with the behavior of the CHF3 gas quantity. This means that, by increasing the microwave output, i.e., increasing the plasma density and degree of dissociation, the CHF3 gas quantity decreases, while on the other hand, the CF4 gas quantity increases through recombination and is subsequently discharged.

[0055] Thus, it can be seen that after the GHG introduced into the etching chamber 103 is decomposed by plasma and then recombined, a significant portion of the original GHG gas is transformed into other GHG and discharged.

[0056] On the other hand, although not illustrated, it was also measured that when non-GHG or low-GWP gases are decomposed by plasma and then recombined, a significant portion of the original gas becomes GHG and is discharged.

[0057] The above two examples demonstrate how to understand and quantify the following two concepts in advance.

[0058] 1) The GHG introduced into the etching chamber 103 is decomposed by plasma and then recombined, and most of the original GHG gas is transformed into other GHG and discharged.

[0059] 2) The gas that is not GHG or has low GWP introduced into the etching chamber 103 is decomposed by plasma and then recombined, and most of the original gas becomes GHG and is discharged.

[0060] That is, the control device 115 can control the pollution removal equipment 114 based on operating conditions predetermined by the Global Warming Factor (GWP) per unit time, exhaust gas data, plasma emission data, and plasma decomposition rate calculated using etching conditions. Here, the control device 115 has a table or database containing exhaust gas decomposition capabilities predetermined as operating conditions based on the GWP, exhaust gas data, plasma emission data, and plasma decomposition rate calculated using etching conditions. The control device 115 is configured to retrieve the exhaust gas decomposition capability table or database based on the GWP, exhaust gas data, and plasma decomposition rate calculated using etching conditions, extract the desired operating conditions, and input them into the pollution removal equipment 114.

[0061] The microwave output has been clarified above, but the control of changes in the processing chamber pressure, high-frequency bias power supply, and magnetic field generating coil conditions—which are other parameters controlling the plasma—can also be known and quantified in advance. Data on plasma emission can be obtained through the microwave output, processing chamber pressure, high-frequency bias power supply, and magnetic field generating coil conditions—which are parameters controlling the plasma.

[0062] Thus, the amount of gas emitted after plasma treatment based on the desired etching conditions is measured and calculated in advance, and a table of gas emission values ​​corresponding to the etching conditions is set up in [the relevant database / system]. Figure 1 The control device 115 shown, or a device control device, though not shown, is provided in the control etching apparatus 101. Using the numerical table of gas discharge volume, according to the method described in Example 1, Figure 3 The gas flow rate is replaced by the gas discharge rate, and the GWP per unit time is calculated in the same way.

[0063] This calculation shows the result from receiving to receiving Figure 1The etching gas information 117 sent by the gas supply device 102 is controlled by the control device 115, and input as the purifying device control information 116 to the purifying equipment 114. The purifying equipment 114 is appropriately controlled to a waste gas decomposition capacity predetermined based on the purifying device control information 116.

[0064] in addition, Figure 1 Not shown in the diagram, but the control device 115 can also receive gas information sent from the control device of the control etching device 101. Alternatively, Figure 1 Although not shown in the figure, it can also be calculated by the device control device based on the gas information of the device control device controlling the etching device, and input into the pest control device 114 as the pest control device control information 116.

[0065] in addition, Figure 3 Although not shown in the figure, the decomposition temperature and decomposition rate of each GHG corresponding to the pest control device 114 can be taken into account when calculating.

[0066] According to the method of this embodiment, in the plasma processing apparatus 10, by clarifying that the result of plasma decomposition and recombining of GHG introduced into the etching processing chamber is that the original GHG gas becomes other GHG and is discharged, and the result of plasma decomposition and recombining of non-GHG gas or low GWP gas introduced into the etching apparatus is that the original gas becomes GHG and is discharged, and by considering the total GWP information of the mixed gas discharged from the etching apparatus 101 per unit time, it is possible to prevent the purging equipment from being overworked and to achieve the use of a highly efficient purging equipment with minimal operating costs.

[0067] The invention described above is based on specific embodiments, but the invention is not limited to the above embodiments. Various modifications can be made without departing from its spirit, which is self-evident. For example, the above embodiments have been described in detail for ease of understanding, and are not necessarily limited to all the described structures. Furthermore, other structures can be added, deleted, or replaced in parts of the structures of each embodiment.

[0068] Explanation of reference numerals in the attached figures

[0069] 101: Etching apparatus; 102: Gas supply device; 103: Processing chamber; 104: Etching gas; 105: Variable exhaust speed valve; 106: Turbopump; 107: Dry pump; 108: Power supply for generating electromagnetic waves; 109: Magnetic field generating coil; 110: High-density plasma; 111: Electrode for sample placement; 112: Wafer; 113: High-frequency bias power supply; 114: Pest control equipment; 115: Control device; 116: Pest control equipment control information; 117: Etching gas information.

Claims

1. A plasma processing apparatus, comprising: A processing chamber for plasma treatment of samples; A high-frequency power source that supplies high-frequency electricity for generating plasma. A sample stage on which the sample is placed; and A pest control device that decomposes waste gas from the treatment chamber. The plasma processing device is characterized in that it further comprises: A control device for controlling the pest control equipment. The control device controls the pest control equipment by specifying the operating conditions of the pest control equipment based on the global warming coefficient per unit time calculated using etching conditions.

2. The plasma treatment apparatus according to claim 1, wherein, The control device controls the pollution removal equipment by specifying the operating conditions based on the global warming coefficient per unit time and the data of the exhaust gas.

3. The plasma treatment apparatus according to claim 1, wherein, The control device controls the pest control equipment by means of the operating conditions specified based on the global warming coefficient per unit time, the data of the exhaust gas, and the data of the plasma luminescence.

4. The plasma treatment apparatus according to claim 1, wherein, The control device controls the pest control equipment based on the operating conditions specified by the global warming coefficient per unit time, the data of the exhaust gas, and the data of the plasma decomposition rate calculated using the etching conditions.

5. The plasma treatment apparatus according to claim 1, wherein, The control device controls the pest control equipment based on the operating conditions specified by the global warming coefficient per unit time, the data of the exhaust gas, the data of the plasma luminescence, and the data of the plasma decomposition rate calculated using the etching conditions.

6. The plasma treatment apparatus according to claim 1, wherein, The global warming coefficient per unit time is calculated using the gas flow rate, the gas's global warming coefficient, the gas density, and the gas mass.

7. The plasma treatment apparatus according to claim 1, wherein, The data on the exhaust gas is obtained upstream of the turbomolecular pump, upstream of the dry pump, or upstream of the pollution control equipment.

8. The plasma treatment apparatus according to claim 4, wherein, The plasma decomposition rate data is calculated using the pressure of the processing chamber, the high-frequency power, the plasma luminescence data, and the exhaust gas data.

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