Preparation method of solar cell surface micro light trapping structure based on shot blasting treatment
By using shot peening equipment to treat the glass surface of solar cells, the problem of preparing light-trapping structures on a large scale and at low cost has been solved, thereby improving the photoelectric conversion efficiency of solar cells.
Patent Information
- Application Number
- CN202511849765.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-09
- Publication Date
- 2026-03-06
AI Technical Summary
Existing technologies make it difficult to fabricate light-trapping structures on the glass surface of solar cells on a large scale and at low cost, resulting in high production costs and low efficiency.
A large-area light-trapping structure is prepared by using shot peening equipment to peen the surface of a solar cell glass substrate and controlling the shot peening parameters such as shot peening medium, time, intensity and angle.
This enables low-cost, large-area fabrication of light-trapping structures, reduces reflection loss, increases photon response, and improves the photoelectric conversion efficiency of solar cells.
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Abstract
Description
Technical Field
[0001] This invention relates to the fields of light trapping technology and solar cell devices, specifically to a method for preparing large-area, low-cost light trapping structures on the glass surface of solar cells based on shot peening equipment. Background Technology
[0002] With the development of modern society and population growth, energy demand has become one of the major issues facing the world. Approximately 80% of human energy consumption is provided by traditional fossil fuels, and dependence on fossil fuels has become a serious global problem. Fossil energy is non-renewable, and over-exploitation has led to a significant reduction in reserves, which are now facing depletion. Furthermore, the use of fossil fuels produces large amounts of greenhouse gases, causing irreversible damage to the ecological environment. Therefore, humanity urgently seeks renewable energy sources to replace fossil fuels and resolve the contradiction between energy production and environmental pollution. Solar energy has attracted much attention due to its cleanliness, safety, abundant reserves, and pollution-free characteristics.
[0003] There are various ways to utilize solar energy, mainly including photothermal conversion, photoelectric conversion, and photochemical conversion. Among these, photoelectric conversion is the most direct, converting light energy directly into electrical energy. It has advantages such as safety, reliability, lack of geographical limitations, and sustainable development, making it an ideal technology for meeting energy demands. The widespread adoption and application of photovoltaic technology has become one of the important means for my country to address environmental pollution and energy security. my country has proposed carbon neutrality and carbon peaking as the main goals of its pollution prevention and control campaign, which means that solar cells will be widely used in the coming years. Large-scale photovoltaic demand places higher demands on the photoelectric conversion efficiency and cost of devices. Therefore, addressing the problems of low efficiency and high cost of solar cell devices has significant application value and scientific significance for accelerating their industrialization.
[0004] Improving the conversion efficiency of solar cells and reducing production costs have always been goals pursued by the photovoltaic industry. Advanced micro- and nano-photonic light trapping methods can achieve both goals simultaneously. In recent years, various light trapping techniques have been applied to solar cells to increase light absorption within the semiconductor layer. Enhancing light absorption while reducing the thickness of the absorption layer allows for lower production costs by using less material. Light trapping techniques, targeting thinner devices, can improve the collection of photogenerated carriers, have fewer restrictions on diffusion length, potentially lead to higher open-circuit voltages, and improve stability through textured material encapsulation, thereby increasing the photoelectric conversion efficiency of solar cells.
[0005] Combining light-trapping structures with thin-film solar cells holds promise for the fabrication of low-cost, high-efficiency solar cells. Various light-trapping solar cell structures have been designed, primarily employing strategies such as surface plasmon resonances, photonic crystals, diffraction gratings, and optical resonators. Current technologies mainly utilize electron beam etching, ultraviolet nanoimprinting, or wet etching, which are costly and cannot facilitate the large-area fabrication of light-trapping structures. Summary of the Invention
[0006] The purpose of this invention is to overcome the problem that existing light-trapping structures cannot be fabricated on a large scale and at low cost, and to provide a method for fabricating light-trapping structures on the glass surface of solar cells on a large scale and at low cost based on shot peening equipment.
[0007] A method for fabricating large-area, low-cost light-trapping structures on the surface of solar cell glass using shot peening equipment is characterized by the use of industrial shot peening equipment to treat the surface of the solar cell glass substrate, thereby obtaining a large-area light-trapping structure. The light-trapping structure effectively reduces reflection loss, increases the number of photons in the response layer, and prolongs the photon travel path and residence time, thus improving the photoelectric conversion efficiency of the solar cell.
[0008] A method for fabricating light-trapping structures on the glass surface of solar cells on a large area and at low cost using shot peening equipment, the method comprising the following steps:
[0009] Step 1: Clean the glass substrate according to the standard semiconductor cleaning procedure;
[0010] Step 2: Spin-coat a buffer layer onto the glass substrate surface as required;
[0011] Step 3: Place the glass substrate into the operating chamber of the shot peening machine as required, and fix it with a custom mold;
[0012] Step 4: Determine the shot peening parameters, such as the target shot peening intensity, based on the size specifications and performance requirements of the glass substrate;
[0013] Step 5: Perform shot peening on the sample according to the process parameters;
[0014] Step 6: After shot peening, remove the glass substrate from the fixture;
[0015] Step 7: Clean the shot-peened glass substrate to remove the surface buffer layer, and use a UV / Vis / NIR spectrophotometer to test the reflection, transmission, and scattering spectra of the structural sample.
[0016] In the large-area, low-cost fabrication of light-trapping structures, practical and effective process parameters are employed, such as: the type and size of the shot peening medium, shot peening time, shot peening intensity, the distance between the shot peening nozzle and the sample surface, and the thickness of the buffer layer. All process parameters during shot peening should be controlled within a reasonable range to achieve the best fabrication results.
[0017] When performing shot peening in this invention, the glass substrate is selected from commercial glass with a thickness of 0.7mm to 2mm, the glass shot has a minimum hardness of 6-7 Mohs, a diameter of 50um to 200um, the air pressure is controlled at 0.1 to 0.4 MPa, the shot peening time is controlled at 5 to 60s, the shot peening speed is controlled at 60 to 100m / s, the distance between the shot peening machine nozzle and the sample surface is controlled at 100mm to 200mm, the spray angle is 90°, and the shot peening intensity is 0.15mmA to 0.30mmA.
[0018] The present invention has the following advantages:
[0019] Advantage 1: Large-area fabrication. Large-area fabrication of light-trapping structures can be achieved using CNC shot peening equipment;
[0020] Advantage 2: Low cost. The use of CNC shot peening equipment to prepare light-trapping structures significantly reduces production costs;
[0021] Advantage 3: Simple equipment and easy operation. The light-trapping structure can be fabricated by shot peening the surface of the glass substrate using a CNC shot peening machine.
[0022] Advantage 4: Adjustable performance. Ideal light-trapping structures can be fabricated through optimization of CNC shot peening process parameters.
[0023] Advantage 5: Mass production is possible. After optimizing the process parameters, solar cell glass with light-trapping structures can be mass-produced using CNC shot peening equipment.
[0024] The beneficial effects of this invention are as follows: This invention proposes a method for preparing light-trapping structures on the glass surface of solar cells on a large area and at low cost based on shot peening equipment. The light-trapping structures prepared by this method can effectively reduce the reflectivity of the glass surface of solar cells, which has important application value and scientific significance for improving the photoelectric conversion efficiency of solar cells. Attached Figure Description
[0025] Figure 1 A process flow diagram for fabricating large-area, low-cost light-trapping structures provided by the present invention;
[0026] Figure 2 Morphology diagram of the light-trapping structure prepared for this invention;
[0027] Figure 3A comparison diagram of the reflectivity of the light-trapping structure and the planar glass prepared in this invention;
[0028] Figure 4 A schematic diagram of the high-efficiency solar cell with light-trapping glass as a substrate prepared according to the present invention;
[0029] In the figure: 1. The fabricated light-trapping glass structure; 2. The front transparent electrode; 3. The cell absorption layer; 4. The rear transparent electrode; 5. The back reflection layer. Detailed Implementation
[0030] Example 1 Quartz glass samples were shot peening using a CNC shot peening machine. The process parameters were as follows: the shot peening medium was glass shot with a diameter of 100 μm, the air pressure was 0.2 MPa, the shot peening time was 5 s, the shot peening intensity was approximately 0.15 mmA, the shot spray angle was 90°, and the distance between the shot peening machine nozzle and the sample surface was 150 mm. The treated glass samples were then tested using a UV / Vis / NIR spectrophotometer.
[0031] Example 2 Quartz glass samples were shot peening using a CNC shot peening machine. The process parameters were as follows: the shot peening medium was glass shot with a diameter of 100 μm, the air pressure was 0.2 MPa, the shot peening time was 5 s, the shot peening intensity was approximately 0.15 mmA, the shot spray angle was 90°, the distance between the shot peening machine nozzle and the sample surface was 150 mm, and the buffer layer was epoxy resin with a thickness of 1 mm. The treated glass samples were then tested using a UV / Vis / NIR spectrophotometer.
[0032] Example 3 Quartz glass samples were shot peening using a CNC shot peening machine. The process parameters were as follows: the shot peening medium was glass shot with a diameter of 100 μm, the air pressure was 0.2 MPa, the shot peening time was 5 s, the shot peening intensity was approximately 0.15 mmA, the shot spray angle was 90°, the distance between the shot peening machine nozzle and the sample surface was 150 mm, and the buffer layer was UV adhesive with a thickness of 1 mm. The treated glass samples were then tested using a UV / Vis / NIR spectrophotometer.
[0033] Example 4 Quartz glass samples were shot peening using a CNC shot peening machine. The process parameters were as follows: the shot peening medium was glass shot with a diameter of 200 μm, the air pressure was 0.3 MPa, the shot peening time was 10 s, the shot peening intensity was approximately 0.15 mmA, the shot spray angle was 90°, and the distance between the shot peening machine nozzle and the sample surface was 100 mm. The treated glass samples were then tested using a UV / Vis / NIR spectrophotometer.
[0034] Example 5 Quartz glass samples were shot peening using a CNC shot peening machine. The process parameters were as follows: the shot peening medium was glass shot with a diameter of 200 μm, the air pressure was 0.3 MPa, the shot peening time was 10 s, the shot peening intensity was approximately 0.15 mmA, the shot spray angle was 90°, the distance between the shot peening machine nozzle and the sample surface was 100 mm, and the buffer layer was epoxy resin with a thickness of 1 mm. The treated glass samples were then tested using a UV / Vis / NIR spectrophotometer.
[0035] Example 6 Quartz glass samples were shot peening using a CNC shot peening machine. The process parameters were as follows: the shot peening medium was glass shot with a diameter of 200 μm, the air pressure was 0.3 MPa, the shot peening time was 10 s, the shot peening intensity was approximately 0.15 mmA, the shot spray angle was 90°, the distance between the shot peening machine nozzle and the sample surface was 100 mm, and the buffer layer was UV adhesive with a thickness of 1 mm. The treated glass samples were then tested using a UV / Vis / NIR spectrophotometer.
[0036] The above content is only a specific implementation example of the present invention, but the scope of protection is not limited to the listed examples, and any approximate substitution is covered within the scope of protection of the present invention.
Claims
1. A method for preparing light-trapping structures on a large area and at a low cost on the surface of solar cell glass based on a shot blasting device, characterized in that: The light-trapping structure preparation method is completed according to the following steps: cleaning the glass sample, and cleaning the surface of the glass substrate according to the semiconductor standard cleaning procedure. The glass substrate is cleaned in an ultrasonic cleaner with acetone, alcohol and deionized water in sequence to remove impurities and oil stains, and then dried with nitrogen. Next, a layer of epoxy resin is spin-coated on the glass surface as a buffer layer. Next, the glass sample is fixed on a customized mold for shot peening. Finally, the glass surface as the shot peening substrate is cleaned again using the semiconductor standard cleaning procedure. The glass substrate is cleaned in an ultrasonic cleaner with acetone, alcohol and deionized water in sequence to remove the epoxy resin and impurities, and a large-area light-trapping structure can be obtained. 2. The method according to claim 1, wherein the method is characterized by: The glass substrate is a commercial glass with a thickness of 0.7mm to 2mm The method for preparing a large-area, low-cost light-trapping structure on the surface of a solar cell glass substrate based on a shot peening device according to claim 1, wherein the glass substrate is a commercial glass with a thickness of 0.7mm to 2mm.
3. The method according to claim 1, wherein the method is characterized in that: The hardness of the glass projectile is not less than 6-7 Mohs, and the diameter is 50um to 200um.
4. The method according to claim 1, wherein the method is characterized in that: The air pressure is controlled to be 0.1 to 0.4MPa during shot peening.
5. The method according to claim 1, wherein the method is characterized in that: The shot peening time is controlled to be 5 to 60s.
6. The method according to claim 1, wherein the method is characterized in that: The shot peening speed is controlled to be 60 to 100m / s.
7. The method according to claim 1, wherein the method is characterized by: The distance between the nozzle of the shot peening machine and the surface of the sample is controlled to be 100mm to 200mm during shot peening.
8. The method according to claim 1, wherein the method is characterized in that: The angle of the projectile during shot peening is 90°, and the shot peening strength is 0.15mmA to 0.30mmA.
9. The method according to claim 1, wherein the method is characterized in that: The buffer layer on the glass surface is selected from epoxy resin or other materials and is spin-coated on the surface of the glass sample. The hardness of the glass projectile is not less than 6-7 Mohs, and the diameter is 50um to 200um. The air pressure is controlled to be 0.1 to 0.4MPa during shot peening. The shot peening time is controlled to be 5 to 60s. The shot peening speed is controlled to be 60 to 100m / s. The distance between the nozzle of the shot peening machine and the surface of the sample is controlled to be 100mm to 200mm during shot peening. The angle of the projectile during shot peening is 90°, and the shot peening strength is 0.15mmA to 0.30mmA. The buffer layer on the glass surface is selected from epoxy resin or other materials and is spin-coated on the surface of the glass sample.