Ultrahigh-speed aluminum circuit board etching solution as well as preparation method and application thereof

Abstract

The invention discloses an ultra-high-speed aluminum circuit board etching solution and a preparation method and application thereof, the ultra-high-speed aluminum circuit board etching solution comprises hydrochloric acid, organic acid, ferric trichloride and a surfactant, the organic acid comprises acetic acid and / or lactic acid, and the surfactant comprises sodium p-toluenesulfonate and / or sodium 4-hydroxybenzenesulfonate. According to the etching solution provided by the invention, on the basis of ultrahigh etching rate, the etched aluminum-based circuit board has the problems of straight circuit, no short circuit or circuit protrusion and the like, the titanium material is hardly corroded, the consumable cost of the titanium-based material is greatly reduced, and the etching solution also has the characteristics of simple components and low cost.

Description

Technical Field

[0001] This invention relates to the field of circuit board technology, specifically to an ultra-high-speed aluminum circuit board etching solution, its preparation method, and its application. Background Technology

[0002] Aluminum-based circuit boards are key electronic components in new energy vehicles. Their high thermal conductivity and heat dissipation capabilities are crucial for the stable operation and lifespan of the vehicle's electronic control system (especially the electric drive system). They effectively manage the heat generated during high-power operation, ensuring vehicle reliability and safety, and contributing to improved energy conversion efficiency and reduced operating costs.

[0003] Aluminum etching solutions are chemical solutions used to remove or corrode the surface of aluminum and its alloys. There are many types of aluminum etching solutions, mainly distinguished by the aluminum layer structure being etched, the application scenario, and the required etching characteristics. They include ordinary phosphoric acid etching solutions and mixed acid etching solutions. Ordinary phosphoric acid aluminum etching solutions typically consist of a mixture of phosphoric acid, nitric acid, and acetic acid, sometimes with the addition of other chemicals, such as disodium ethylenediaminetetraacetate hydrate. Mixed acid etching solutions combine different acids (such as hydrochloric acid, sulfuric acid, and phosphoric acid) in a specific ratio to achieve a faster corrosion rate, suitable for rapid etching of aluminum and aluminum alloys.

[0004] In the manufacturing process of new energy vehicles, especially for aluminum-based circuit boards adapted for vehicle power supplies, the aluminum layer thickness is generally 100 micrometers or higher. Using phosphoric acid etching solutions results in slow etching speeds and extremely long etching times. Therefore, hydrochloric acid etching solutions with faster etching rates are considered, often using concentrations of 100 g / L or even higher. However, at such high etching rates, uneven etching and crooked lines can occur. Due to the excessively fast etching rate, incomplete etching in certain areas can lead to line protrusions or even short circuits. Furthermore, the corresponding metal components in lines using hydrochloric acid etching solutions require corrosion-resistant titanium-based materials. High-concentration hydrochloric acid has a stronger corrosive effect on titanium-based materials, making the cost of titanium-based materials a major component of the aluminum substrate cost. Therefore, developing an aluminum circuit board etching solution with ultra-high etching rates, uniform etching, straight lines, and low corrosion to titanium-based materials is a pressing problem that needs to be solved. Summary of the Invention

[0005] The main objective of this invention is to propose an ultra-high-speed aluminum circuit board etching solution, its preparation method, and its application, aiming to solve the problems of uneven etching, crooked lines, and high corrosivity to titanium-based materials in current etching solutions used for aluminum circuit boards.

[0006] To achieve the above objectives, the present invention proposes an ultra-high-speed aluminum circuit board etching solution, which includes hydrochloric acid, organic acid, ferric chloride and surfactant, wherein the organic acid includes acetic acid and / or lactic acid, and the surfactant includes sodium p-toluenesulfonate and / or sodium 4-hydroxybenzenesulfonate.

[0007] Optionally, the hydrochloric acid in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 120–300 g / L.

[0008] Optionally, the hydrochloric acid in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 180–250 g / L.

[0009] Optionally, the organic acid in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 0.1 to 50 g / L.

[0010] Optionally, the organic acid is acetic acid, and the mass concentration of the acetic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1–1 g / L; or,

[0011] The organic acid is lactic acid, and the mass concentration of lactic acid in the ultra-high-speed aluminum circuit board etching solution is 10–50 g / L; or…

[0012] The organic acids include acetic acid and lactic acid, and the total mass concentration of acetic acid and lactic acid in the ultra-high speed aluminum circuit board etching solution is 0.1-50 g / L, and the mass ratio of acetic acid to lactic acid is 1:10-30.

[0013] Optionally, the ferric chloride in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 8 to 100 g / L.

[0014] Optionally, the ferric chloride in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 15–85 g / L.

[0015] Optionally, the surfactant in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 0.01 to 50 g.

[0016] Optionally, the surfactant in the ultra-high speed aluminum circuit board etching solution has a mass concentration of 10–45 g / L.

[0017] Optionally, the ultra-high-speed aluminum circuit board etching solution also contains aluminum, and the concentration of aluminum in the ultra-high-speed aluminum circuit board etching solution is 15-35 g / L.

[0018] Furthermore, the present invention also proposes a method for etching aluminum circuit boards, wherein the method uses the ultra-high-speed aluminum circuit board etching solution described above to etch the aluminum circuit board.

[0019] The ultra-high-speed aluminum circuit board etching solution provided by this invention has a simple main composition, primarily consisting of four components: hydrochloric acid, organic acid, ferric chloride, and surfactant. Hydrochloric acid has a strong etching ability for aluminum and is the main component in the etching solution that achieves ultra-high etching rates. Combined with the role of organic acid in enhancing etching uniformity during the etching process, and the use of sulfonic acid groups on the benzene rings of the surfactant to promote the etching of alumina on the surface of the aluminum circuit board, the circuits become straighter, avoiding problems such as short circuits or circuit protrusions. Simultaneously, the ferric chloride oxidizes titanium to titanium dioxide, which is a very dense metal oxide layer that effectively prevents the titanium material from being corroded by hydrochloric acid. In summary, the etching solution provided by this invention achieves ultra-high etching rates while producing straight aluminum-based circuit boards without short circuits or circuit protrusions, with almost no corrosion to titanium materials, significantly reducing the consumable cost of titanium-based materials. Furthermore, this etching solution is characterized by its simple composition and low cost. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a view of the etched product in Example 1 of the present invention. Figure 2 This is a view of the etched product surface in Example 2 of the present invention; Figure 3 This is a view of the etched product surface in Example 3 of the present invention; Figure 4 This is a view of the etched product surface in Example 4 of the present invention; Figure 5 This is a view of the etched product surface in Example 5 of the present invention; Figure 6 This is a view of the etched product surface in Application Example 11 of the present invention; Figure 7 This is a view of the etched product surface in Example 12 of the present invention; Figure 8 This is a view of the etched product in Application Example 15 of the present invention; Figure 9 This is a view of the etched product in Application Example 18 of the present invention; Figure 10 This is a view of the etched product surface in Application Example 20 of the present invention; Figure 11 This is a view of the etched product in Comparative Example 1 of the present invention. Figure 12 This is a view of the etched product in Comparative Example 5 of the present invention. Figure 13 This is a view of the etched product in Comparative Example 6 of the present invention. Figure 14 This is a view of the etched product in Comparative Example 7 of the present invention. Figure 15 This is a view of the etched product in Comparative Example 8 of the present invention. Figure 16 This is a view of the etched product in Comparative Example 9 of the present invention. Figure 17 This is a view of the product after etching in Comparative Example 10 of the present invention.

[0022] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Where the manufacturers of reagents or instruments are not specified, they are all conventional products that can be purchased commercially. Furthermore, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, or solution B, or a solution where both A and B are satisfied simultaneously. In addition, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0024] Currently, the demand for aluminum-based circuit boards is increasing in industries such as new energy vehicles and LEDs. Etching is a key process in the formation of aluminum-based circuit boards, and the etching solution is an important factor in their formation. Developing an etching solution with high etching rate, uniform etching, straight lines, and low corrosivity to titanium-based materials is an urgent problem to be solved.

[0025] In view of this, the present invention proposes an ultra-high-speed aluminum circuit board etching solution, which comprises hydrochloric acid, organic acid, ferric chloride, and surfactant, wherein the organic acid includes acetic acid and / or lactic acid, and the surfactant includes sodium p-toluenesulfonate and / or sodium 4-hydroxybenzenesulfonate. It should be noted that, in the present invention, the ultra-high-speed aluminum circuit board etching solution, in addition to the above four main components, also includes water.

[0026] The ultra-high-speed aluminum circuit board etching solution provided by this invention has a simple main composition, consisting of four components: hydrochloric acid, organic acid, ferric chloride, and surfactant. Hydrochloric acid has a strong etching ability for aluminum and is the main component in the etching solution to achieve ultra-high-speed etching. Combined with the role of organic acid in enhancing the etching uniformity during the etching process, and the use of sulfonic acid groups on the benzene ring of the surfactant to promote the etching of alumina on the surface of the aluminum circuit board, the circuits are made straighter, avoiding problems such as short circuits or circuit protrusions. At the same time, the ferric chloride in the ferric chloride oxidizes titanium to titanium dioxide, which is a very dense metal oxide layer that can effectively prevent titanium material from being corroded by hydrochloric acid.

[0027] More specifically, the ultra-high-speed aluminum circuit board etching solution provided by the present invention has the following advantages:

[0028] (1) The etching rate can reach 30-40 μm / min, that is, an aluminum circuit board with an aluminum thickness of 100 μm can be etched in about 3 minutes. The etching rate is extremely fast, more than ten times that of ordinary aluminum etching solution. After etching, the aluminum base circuit board has straight lines and no problems such as short circuits or line protrusions.

[0029] (2) Improved corrosion resistance of titanium materials. The etching solution containing ferric chloride as a corrosion inhibitor has almost no corrosion to titanium materials. After soaking in the etching solution at 90°C for 1 hour, the weight loss of titanium materials is only 0.1%, which can greatly reduce the cost of titanium materials.

[0030] (3) It has simple composition and low cost, with a cost of about 30% of that of ordinary etching solution.

[0031] In some embodiments of the present invention, the hydrochloric acid in the ultra-high-speed aluminum circuit board etching solution has a mass concentration of 120–300 g / L, for example, it can be 120 g / L, 130 g / L, 140 g / L, 150 g / L, 160 g / L, 170 g / L, 180 g / L, 190 g / L, 200 g / L, 210 g / L, 220 g / L, 230 g / L, 240 g / L, 250 g / L, 260 g / L, 270 g / L, 280 g / L, 290 g / L, or 300 g / L, etc. Further, in some preferred embodiments of the present invention, the hydrochloric acid in the ultra-high-speed aluminum circuit board etching solution has a mass concentration of 180–250 g / L.

[0032] In this invention, the organic acid enhances etching uniformity during the etching process, and the lactic acid, due to its hydroxyl groups, also helps to straighten the circuit lines. In some embodiments of this invention, the mass concentration of the organic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1–50 g / L.

[0033] Furthermore, in this invention, the organic acid can be acetic acid alone, lactic acid alone, or both acetic acid and lactic acid. Specifically, in some embodiments of this invention, the organic acid is acetic acid alone. In this case, the mass concentration of acetic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1–1 g / L, for example, it can be 0.1 g / L, 0.2 g / L, 0.3 g / L, 0.4 g / L, 0.5 g / L, 0.6 g / L, 0.7 g / L, 0.8 g / L, 0.9 g / L, or 1 g / L, etc.

[0034] In some other embodiments of the present invention, the organic acid is selected as lactic acid alone. In this case, the mass concentration of lactic acid in the ultra-high speed aluminum circuit board etching solution is 10-50 g / L, for example, it can be 10 g / L, 15 g / L, 20 g / L, 25 g / L, 30 g / L, 35 g / L, 40 g / L, 45 g / L or 50 g / L, etc.

[0035] In some embodiments of the present invention, the organic acid is selected from both acetic acid and lactic acid. In this case, the total mass concentration of acetic acid and lactic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1–50 g / L, and the mass ratio of acetic acid to lactic acid is 1:10–30, for example, 1:10, 1:11, 1:12, 1:13, 1:14, 1:15, 1:16, 1:17, 1:18, 1:19, 1:20, 1:21, 1:22, 1:23, 1:24, 1:25, 1:26, 1:27, 1:28, 1:29, or 1:30. In some preferred embodiments of the present invention, the mass ratio of acetic acid to lactic acid is 1:20.

[0036] In this invention, the ferric chloride acts as a corrosion inhibitor, where the ferric ions can oxidize titanium to titanium dioxide. The reaction equation is: Ti + O₂ + Fe 3+ →TiO2+Fe 2+Titanium dioxide forms a very dense metal oxide layer, effectively preventing corrosion of titanium materials by hydrochloric acid. After immersing the titanium material in the etching solution provided by this invention at 90°C for 1 hour, the weight loss is only 0.1%, indicating that the etching solution provided by this invention hardly corrodes the titanium material. Specifically, in some embodiments of this invention, the mass concentration of ferric chloride in the ultra-high-speed aluminum circuit board etching solution is 8–100 g / L, for example, it can be 8 g / L, 10 g / L, 15 g / L, 20 g / L, 30 g / L, 40 g / L, 50 g / L, 60 g / L, 70 g / L, 80 g / L, 90 g / L, or 100 g / L. Further, in some preferred embodiments of this invention, the mass concentration of ferric chloride in the ultra-high-speed aluminum circuit board etching solution is 15–85 g / L.

[0037] In this invention, the sulfonic acid group on the benzene ring of the surfactant can promote the etching of alumina on the surface of the aluminum-based circuit board, making the lines straighter. Specifically, in some embodiments of this invention, the mass concentration of the surfactant is 0.01–50 g, for example, 0.01 g / L, 0.05 g / L, 0.1 g / L, 0.5 g / L, 1 g / L, 5 g / L, 10 g / L, 15 g / L, 20 g / L, 25 g / L, 30 g / L, 35 g / L, 40 g / L, 45 g / L, or 50 g / L. Further, in some preferred embodiments of this invention, the mass concentration of the surfactant is 10–45 g / L.

[0038] In some embodiments of the present invention, to ensure a uniform and stable etching rate, the ultra-high-speed aluminum circuit board etching solution also contains aluminum, and the concentration of aluminum in the ultra-high-speed aluminum circuit board etching solution is 15-35 g / L. Preferably, before formal use, the ultra-high-speed aluminum circuit board etching solution provided by the present invention needs to first etch aluminum metal, with an aluminum metal content of approximately 15-20 g / L. During production (i.e., when etching the aluminum circuit board), the aluminum concentration is maintained at 15-35 g / L, which can be controlled within an appropriate range by an automatic feeding system.

[0039] In some embodiments of the present invention, the ultra-high-speed aluminum circuit board etching solution can be prepared by the following steps: mixing hydrochloric acid, organic acid and surfactant to dissolve 15-35 g / L of aluminum, and then adding ferric chloride to mix, thereby obtaining the ultra-high-speed aluminum circuit board etching solution.

[0040] The present invention also proposes a method for etching aluminum circuit boards, wherein the method uses the ultra-high-speed aluminum circuit board etching solution provided above by the present invention to etch the aluminum circuit board.

[0041] The method for etching aluminum circuit boards proposed in this invention uses the ultra-high-speed aluminum circuit board etching solution provided by this invention to etch the aluminum circuit board. It has the advantages of ultra-fast etching rate, uniform etching, straight lines, and almost no corrosion to titanium-based materials. The etching rate can reach 30-40 μm / min.

[0042] In some embodiments of the present invention, the process of etching the circuit board using the ultra-high-speed aluminum circuit board etching solution provided by the present invention is as follows:

[0043] First chemical cleaning → Applying the bottom protective film → Fast pressing → Drilling → Second chemical cleaning → Applying the etched dry film → Exposure → Developing, etching, and film removal → Third chemical cleaning → Applying the top protective film → Fast pressing → Baking → Slitting → Packaging.

[0044] The technical solution of the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings. It should be understood that the following embodiments are only used to explain the present invention and are not intended to limit the present invention.

[0045] The aluminum circuit boards used in the following examples and comparative examples are all single-layer aluminum circuit boards with a protective underlayer that have been fully exposed and developed, and the aluminum thickness is 100μm.

[0046] Example 1

[0047] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 200 g / L, the concentration of lactic acid is 20 g / L, the concentration of ferric chloride is 20 g / L, the concentration of sodium p-toluenesulfonate is 30 g / L and the concentration of aluminum is 15 g / L.

[0048] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0049] Example 2

[0050] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, ferric chloride, sodium 4-hydroxybenzenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 280 g / L, the concentration of acetic acid is 0.5 g / L, the concentration of ferric chloride is 20 g / L, the concentration of sodium 4-hydroxybenzenesulfonate is 30 g / L and the concentration of aluminum is 15 g / L.

[0051] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, sodium 4-hydroxybenzenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0052] Example 3

[0053] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of ferric chloride is 50 g / L, the concentration of sodium p-toluenesulfonate is 5 g / L and the concentration of aluminum is 15 g / L.

[0054] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0055] Example 4

[0056] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 10 g / L, the concentration of ferric chloride is 20 g / L, the concentration of sodium p-toluenesulfonate is 30 g / L and the concentration of aluminum is 15 g / L.

[0057] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0058] Example 5

[0059] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 30 g / L, the concentration of ferric chloride is 20 g / L, the concentration of sodium p-toluenesulfonate is 30 g / L and the concentration of aluminum is 15 g / L.

[0060] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0061] Example 6

[0062] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 230 g / L, the concentration of acetic acid is 0.1 g / L, the concentration of ferric chloride is 15 g / L, the concentration of sodium p-toluenesulfonate is 20 g / L and the concentration of aluminum is 20 g / L.

[0063] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0064] Example 7

[0065] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 150 g / L, the concentration of acetic acid is 0.4 g / L, the concentration of lactic acid is 40 g / L, the concentration of ferric chloride is 85 g / L, the concentration of sodium p-toluenesulfonate is 10 g / L and the concentration of aluminum is 25 g / L.

[0066] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0067] Example 8

[0068] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, sodium 4-hydroxybenzenesulfonate, aluminum and water. The concentration of hydrochloric acid is 120 g / L, the concentration of acetic acid is 0.8 g / L, the concentration of lactic acid is 24 g / L, the concentration of ferric chloride is 8 g / L, the concentration of sodium p-toluenesulfonate is 20 g / L, the concentration of sodium 4-hydroxybenzenesulfonate is 30 g / L, and the concentration of aluminum is 30 g / L.

[0069] (2) The preparation method of the etching solution for ultra-high speed aluminum circuit boards is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate, sodium 4-hydroxybenzenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0070] Example 9

[0071] (1) The ultra-high speed aluminum circuit board etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 300 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of ferric chloride is 100 g / L, the concentration of sodium p-toluenesulfonate is 0.01 g / L and the concentration of aluminum is 35 g / L.

[0072] (2) The preparation method of ultra-high speed aluminum circuit board etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0073] Example 10

[0074] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of hydrochloric acid is adjusted to 110 g / L.

[0075] Example 11

[0076] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of hydrochloric acid is adjusted to 320 g / L.

[0077] Example 12

[0078] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of lactic acid is adjusted to 6 g / L.

[0079] Example 13

[0080] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of lactic acid is adjusted to 60 g / L.

[0081] Example 14

[0082] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 3, except that the mass concentration of lactic acid is adjusted to 40 g / L.

[0083] Example 15

[0084] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of lactic acid is adjusted to 5 g / L.

[0085] Example 16

[0086] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of ferric chloride is adjusted to 5 g / L.

[0087] Example 17

[0088] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of ferric chloride is adjusted to 110 g / L.

[0089] Example 18

[0090] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of sodium p-toluenesulfonate is adjusted to 0.005 g / L.

[0091] Example 19

[0092] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1, except that the mass concentration of sodium p-toluenesulfonate is adjusted to 60 g / L.

[0093] Example 20

[0094] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1. The difference is that the mass concentration of hydrochloric acid is adjusted to 110 g / L, the mass concentration of lactic acid is adjusted to 6 g / L, the mass concentration of ferric chloride is adjusted to 5 g / L, and the mass concentration of sodium p-toluenesulfonate is adjusted to 0.005 g / L.

[0095] Example 21

[0096] The composition and preparation method of the ultra-high speed aluminum circuit board etching solution are the same as those in Example 1. The difference is that the mass concentration of hydrochloric acid is adjusted to 320 g / L, the mass concentration of lactic acid is adjusted to 60 g / L, the mass concentration of ferric chloride is adjusted to 110 g / L, and the mass concentration of sodium p-toluenesulfonate is adjusted to 60 g / L.

[0097] Comparative Example 1

[0098] (1) The etching solution includes hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of sodium p-toluenesulfonate is 5 g / L and the concentration of aluminum is 15 g / L.

[0099] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved.

[0100] Comparative Example 2

[0101] (1) The etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of ferric chloride is 5 g / L, the concentration of sodium p-toluenesulfonate is 5 g / L and the concentration of aluminum is 15 g / L.

[0102] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0103] Comparative Example 3

[0104] (1) The etching solution includes hydrochloric acid, acetic acid, lactic acid, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L and the concentration of aluminum is 15 g / L.

[0105] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid and water evenly at room temperature, aluminum is dissolved.

[0106] Comparative Example 4

[0107] (1) The etching solution includes hydrochloric acid, acetic acid, lactic acid, copper chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of copper chloride is 50 g / L, the concentration of sodium p-toluenesulfonate is 5 g / L and the concentration of aluminum is 15 g / L.

[0108] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then copper chloride is added and stirred evenly.

[0109] Comparative Example 5

[0110] (1) The etching solution includes hydrochloric acid, acetic acid, ferric chloride, aluminum and water, wherein the concentration of hydrochloric acid is 280 g / L, the concentration of acetic acid is 0.5 g / L, the concentration of ferric chloride is 20 g / L and the concentration of aluminum is 20 g / L.

[0111] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid and water evenly at room temperature, dissolve aluminum, and then add ferric chloride and stir evenly.

[0112] Comparative Example 6

[0113] (1) The etching solution includes hydrochloric acid, ferric chloride, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of ferric chloride is 50 g / L and the concentration of aluminum is 15 g / L.

[0114] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid and water evenly at room temperature, dissolve aluminum, and then add ferric chloride and stir evenly.

[0115] Comparative Example 7

[0116] (1) The etching solution includes hydrochloric acid, citric acid, ferric chloride, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of citric acid is 30 g / L, the concentration of ferric chloride is 50 g / L and the concentration of aluminum is 15 g / L.

[0117] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, citric acid and water evenly at room temperature, dissolve aluminum, and then add ferric chloride and stir evenly.

[0118] Comparative Example 8

[0119] (1) The etching solution includes hydrochloric acid, succinic acid, ferric chloride, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of succinic acid is 30 g / L, the concentration of ferric chloride is 50 g / L and the concentration of aluminum is 15 g / L.

[0120] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, succinic acid and water evenly at room temperature, dissolve aluminum, and then add ferric chloride and stir evenly.

[0121] Comparative Example 9

[0122] (1) The etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, 1,2-propanediol, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of ferric chloride is 50 g / L, the concentration of 1,2-propanediol is 30 g / L and the concentration of aluminum is 15 g / L.

[0123] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, 1,2-propanediol and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0124] Comparative Example 10

[0125] (1) The etching solution includes hydrochloric acid, acetic acid, lactic acid, ferric chloride, sodium p-toluenesulfonate, aluminum and water, wherein the concentration of hydrochloric acid is 250 g / L, the concentration of acetic acid is 1 g / L, the concentration of lactic acid is 20 g / L, the concentration of ferric chloride is 50 g / L, the concentration of sodium p-toluenesulfonate is 5 g / L and the concentration of aluminum is 10 g / L.

[0126] (2) The preparation method of the etching solution is as follows: After stirring hydrochloric acid, acetic acid, lactic acid, sodium p-toluenesulfonate and water evenly at room temperature, aluminum is dissolved, and then ferric chloride is added and stirred evenly.

[0127] Application Example 1

[0128] (1) Aluminum circuit board etching: The ultra-high speed aluminum circuit board etching solution prepared in Example 1 was used to etch the developed aluminum circuit board at 40°C for 200s and 30μm / min.

[0129] After the film is removed, the resulting aluminum circuit board is as follows: Figure 1 As shown, the line is straight, without short circuits or bulges.

[0130] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0131] Application Example 2

[0132] (1) Aluminum circuit board etching: The ultra-high speed aluminum circuit board etching solution prepared in Example 2 was used to etch the developed aluminum circuit board at 40°C for 160s and 37.5μm / min.

[0133] After the film is removed, the resulting aluminum circuit board is as follows: Figure 2 As shown, the line is straight, without short circuits or bulges.

[0134] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0135] Application Example 3

[0136] (1) Aluminum circuit board etching: The ultra-high speed aluminum circuit board etching solution prepared in Example 3 was used to etch the developed aluminum circuit board at 40°C for 160s and 37.5μm / min.

[0137] After the film is removed, the resulting aluminum circuit board is as follows: Figure 3 As shown, the line is straight, without short circuits or bulges.

[0138] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0139] Application Example 4

[0140] (1) Aluminum circuit board etching: The ultra-high speed aluminum circuit board etching solution prepared in Example 4 was used to etch the developed aluminum circuit board at 40°C for 160s and 37.5μm / min.

[0141] After the film is removed, the resulting aluminum circuit board is as follows: Figure 4 As shown, the line is straight, without short circuits or bulges.

[0142] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0143] Application Example 5

[0144] (1) Aluminum circuit board etching: The ultra-high speed aluminum circuit board etching solution prepared in Example 5 was used to etch the developed aluminum circuit board at 40°C for 170s and 35.3μm / min.

[0145] After the film is removed, the resulting aluminum circuit board is as follows: Figure 5 As shown, the line is straight, without short circuits or bulges.

[0146] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0147] Application Examples 6-9

[0148] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Examples 6-19.

[0149] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0150] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0151] Application Example 10

[0152] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 10. The etching time was 350s and the etching rate was 17.1μm / min.

[0153] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0154] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0155] Application Example 11

[0156] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 11. The etching time was 130 s and the etching rate was 46.2 μm / min.

[0157] After the film is removed, the resulting aluminum circuit board is as follows: Figure 6 As shown, the line is straight, without short circuits or bulges, but its appearance is rather dark.

[0158] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0159] Application Example 12

[0160] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 12. The etching time was 200s and the etching rate was 30μm / min.

[0161] After the film is removed, the resulting aluminum circuit board is as follows: Figure 7 As shown, the line is slightly crooked, but there are no short circuits or bulges.

[0162] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0163] Application Example 13

[0164] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 13. The etching time was 220s and the etching rate was 27.3μm / min.

[0165] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0166] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0167] Application Example 14

[0168] The aluminum circuit board was etched using the same method as in Application Example 3, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 14. The etching time was 180 s and the etching rate was 33.5 μm / min.

[0169] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0170] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0171] Application Example 15

[0172] The aluminum circuit board was etched using the same method as in Application Example 3, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 15. The etching time was 150s and the etching rate was 39.8μm / min.

[0173] After the film is removed, the resulting aluminum circuit board is as follows: Figure 8 As shown, the line is slightly crooked, but there are no short circuits or bulges.

[0174] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0175] Application Example 16

[0176] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 16. The etching time was 210 s and the etching rate was 28.1 μm / min.

[0177] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0178] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 4.3%, indicating severe corrosion.

[0179] Application Example 17

[0180] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 17. The etching time was 150 s and the etching rate was 40.3 μm / min.

[0181] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0182] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0183] Application Example 18

[0184] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 18. The etching time was 160 s and the etching rate was 37.5 μm / min.

[0185] After the film is removed, the resulting aluminum circuit board is as follows: Figure 9 The line shown is not straight and has protrusions.

[0186] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0187] Application Example 19

[0188] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 19. The etching time was 300s and the etching rate was 20.4μm / min.

[0189] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0190] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0191] Application Example 20

[0192] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 20. The etching time was 240s and the etching rate was 25.3μm / min.

[0193] After the film is removed, the resulting aluminum circuit board is as follows: Figure 10 As shown, the line is not straight and has protrusions.

[0194] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 5.6%, indicating severe corrosion.

[0195] Application Example 21

[0196] The aluminum circuit board was etched using the same method as in Application Example 1, except that the etching solution was replaced with the ultra-high-speed aluminum circuit board etching solution prepared in Example 21. The etching time was 250s and the etching rate was 23.8μm / min.

[0197] After the film is removed, the resulting aluminum circuit board has straight lines and no short circuits or protrusions.

[0198] After the titanium material was immersed in the etching solution prepared in this embodiment at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0199] Application Comparative Example 1

[0200] Aluminum circuit board etching: The etching solution prepared in Comparative Example 1 was used to etch the developed aluminum circuit board at 40°C for 170s and 35.3μm / min.

[0201] After the film is removed, the resulting aluminum circuit board is as follows: Figure 11 As shown, the line is straight, without short circuits or bulges.

[0202] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 32.1%, indicating very severe corrosion.

[0203] Application Comparative Example 2

[0204] Aluminum circuit board etching: The etching solution prepared in Comparative Example 2 was used to etch the aluminum circuit board using the same method as in Comparative Example 1.

[0205] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 4.5%, indicating very severe corrosion.

[0206] Application Comparative Example 3

[0207] Aluminum circuit board etching: The etching solution prepared in Comparative Example 3 was used to etch the aluminum circuit board using the same method as in Comparative Example 1.

[0208] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 32.7%, indicating severe corrosion.

[0209] Application Comparative Example 4

[0210] Aluminum circuit board etching: The etching solution prepared in Comparative Example 4 was used to etch the aluminum circuit board using the same method as in Comparative Example 1.

[0211] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 22.7%, indicating very severe corrosion.

[0212] Application Comparative Example 5

[0213] Aluminum circuit board etching: The etching solution prepared in Comparative Example 5 was used to etch the developed aluminum circuit board at 40°C for 140 s and at an etching rate of 41.8 μm / min.

[0214] After the film is removed, the resulting aluminum circuit board is as follows: Figure 12 As shown, the line is not straight, has a short circuit problem, and has bulges and other phenomena.

[0215] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0216] Application Comparative Example 6

[0217] Aluminum circuit board etching: The etching solution prepared in Comparative Example 6 was used to etch the aluminum circuit board using the same method as in Comparative Example 1. The etching time was 150s and the etching rate was 40.0μm / min.

[0218] After the film is removed, the resulting aluminum circuit board is as follows: Figure 13 As shown, the line is not straight and has severe bulges.

[0219] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0220] Application Comparative Example 7

[0221] Aluminum circuit board etching: The etching solution prepared in Comparative Example 7 was used to etch the developed aluminum circuit board at 40°C for 260 s and 23.1 μm / min.

[0222] After the film is removed, the resulting aluminum circuit board is as follows: Figure 14 As shown, the line is severely crooked and has significant bulges.

[0223] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0224] Application Comparative Example 8

[0225] Aluminum circuit board etching: The etching solution prepared in Comparative Example 8 was used to etch the aluminum circuit board using the same method as in Comparative Example 7. The etching time was 230s and the etching rate was 26.1μm / min.

[0226] After the film is removed, the resulting aluminum circuit board is as follows: Figure 15 As shown, the line is severely crooked and has significant bulges.

[0227] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0228] Application Comparison Example 9

[0229] Aluminum circuit board etching: The etching solution prepared in Comparative Example 9 was used to etch the developed aluminum circuit board at 40°C for 330s and 18.2μm / min.

[0230] After the film is removed, the resulting aluminum circuit board is as follows: Figure 16 As shown, the line is not straight and has protrusions.

[0231] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0232] Application Comparison Example 10

[0233] Aluminum circuit board etching: The etching solution prepared in Comparative Example 10 was used to etch the developed aluminum circuit board at 40°C for 150 seconds at a rate of 40.1 μm / min. The etching process was violent.

[0234] After the film is removed, the resulting aluminum circuit board is as follows: Figure 17 As shown, the line is straight with no protrusions, but its appearance is rather dark.

[0235] After the titanium material was immersed in the etching solution prepared above in this comparative example at 90°C for 1 hour, the weight loss was 0.1%, and there was almost no corrosion.

[0236] The above are merely preferred embodiments of the present invention and do not limit the patent scope of the present invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the patent protection scope of the present invention.

Claims

1. An ultra-high speed aluminum wire circuit board etching solution, characterized by, The ultra-high-speed aluminum circuit board etching solution comprises hydrochloric acid, organic acid, ferric chloride and surfactant, wherein the organic acid comprises acetic acid and / or lactic acid, and the surfactant comprises sodium p-toluenesulfonate and / or sodium 4-hydroxybenzenesulfonate.

2. The super-high-speed aluminum wire board etching solution according to claim 1, wherein The mass concentration of the hydrochloric acid in the ultra-high-speed aluminum circuit board etching solution is 120-300 g / L.

3. The super-high-speed aluminum wire board etching solution according to claim 1, wherein the ammonium salt is ammonium chloride. The mass concentration of the hydrochloric acid in the ultra-high-speed aluminum circuit board etching solution is 180-250 g / L.

4. The super-high-speed aluminum wire board etching solution according to claim 1, wherein the ammonium salt is ammonium chloride. The mass concentration of the organic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1-50 g / L.

5. The super-high-speed aluminum wire board etching solution according to claim 1, wherein the ammonium salt is ammonium chloride. The organic acid is acetic acid, and the mass concentration of the acetic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1-1 g / L; or, The organic acid is lactic acid, and the mass concentration of the lactic acid in the ultra-high-speed aluminum circuit board etching solution is 10-50 g / L; or, The organic acid comprises acetic acid and lactic acid, and the total mass concentration of the acetic acid and lactic acid in the ultra-high-speed aluminum circuit board etching solution is 0.1-50 g / L, and the mass ratio of the acetic acid to lactic acid is 1:10-30.

6. The super-high-speed aluminum wire board etching solution according to claim 1, wherein The mass concentration of the ferric chloride in the ultra-high-speed aluminum circuit board etching solution is 8-100 g / L.

7. The super-high-speed aluminum wire board etching solution according to claim 1, wherein the ammonium salt is ammonium chloride. The mass concentration of the ferric chloride in the ultra-high-speed aluminum circuit board etching solution is 15-85 g / L.

8. The super-high-speed aluminum wire board etching solution according to claim 1, wherein The mass concentration of the surfactant in the ultra-high-speed aluminum circuit board etching solution is 0.01-50 g / L.

9. The super-high-speed aluminum wire board etching solution according to claim 1, wherein The mass concentration of the surfactant in the ultra-high-speed aluminum circuit board etching solution is 10-45 g / L.

10. The super-high-speed aluminum wire board etching solution according to claim 1, wherein The ultra-high-speed aluminum circuit board etching solution further comprises aluminum, and the concentration of the aluminum in the ultra-high-speed aluminum circuit board etching solution is 15-35 g / L.

11. A method of etching an aluminum circuit board, characterized by, The method adopts the ultra-high-speed aluminum circuit board etching solution according to any one of claims 1-10 to etch an aluminum circuit board.

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