Semiconductor growth apparatus with rotating assembly

Abstract

The application provides a semiconductor growth equipment with a rotating assembly, which comprises a reaction chamber, a susceptor arranged in the reaction chamber, a rotating assembly for driving the susceptor to rotate, a gas injection device, a shaft, a pressure head structure and an elastic assembly; the top surface of the susceptor is provided with a docking part; the gas injection device is arranged in the reaction chamber and opposite to the top surface of the susceptor, and the gas injection device is provided with a plurality of gas supply channels; the shaft is movably arranged in the gas injection device to move towards or away from the susceptor, and the shaft penetrates through the bottom of the gas injection device; the pressure head structure is connected with the bottom of the shaft and located between the bottom surface of the gas injection device and the top surface of the susceptor, and is detachably connected with the docking part to provide a pressing force; the elastic assembly is arranged on the top surface of the pressure head structure around the shaft and movably penetrates through the gas injection device, so that the shaft is driven to move towards or away from the susceptor by compression or extension, and the rotating stability of the susceptor is improved by providing a pressing force to the susceptor, thereby being beneficial to the uniform growth of the material layer on the surface of the substrate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing equipment technology, and more particularly to a semiconductor growth apparatus equipped with a rotating component. Background Technology

[0002] Semiconductor growth equipment is essential equipment in semiconductor manufacturing. It grows semiconductor material layers, such as epitaxial layers, by introducing specific process gases into a reaction chamber and causing a reaction on the heated substrate surface. The performance of semiconductor growth equipment has a significant impact on the uniformity of the semiconductor material layers and the performance of the semiconductor devices.

[0003] To achieve uniform growth of semiconductor material layers on the substrate surface, semiconductor growth equipment commonly employs rotating pedestal technology. The pedestal supporting the substrate is driven to rotate during the process, resulting in a more uniform distribution of process gases on the substrate surface. Therefore, the rotational stability of the pedestal becomes one of the key factors affecting the uniformity of the thin film.

[0004] However, due to unavoidable constraints in mechanical installation, such as installation tolerances and the thermal expansion properties of the mechanical structure, the base is prone to vibration during rotation, thus affecting the stability of rotation. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor growth apparatus equipped with a rotating component, which can improve the rotational stability of the substrate by providing a clamping force to the substrate, thereby facilitating the uniform growth of semiconductor material layers on the substrate surface.

[0006] To achieve the above objectives, the semiconductor growth apparatus of the present invention includes:

[0007] A reaction chamber and a base disposed within the reaction chamber, the top surface of the base being used to support the substrate and having a mating portion;

[0008] A rotating component, connected to the base, is used to drive the base to rotate;

[0009] A gas injection device is disposed in the reaction chamber and extends into the reaction chamber opposite the top surface of the base. The gas injection device is provided with a plurality of gas supply channels, and each gas supply channel communicates with the reaction chamber through the side wall of the gas injection device.

[0010] A shaft is movably mounted on the gas injection device to move toward or away from the base, and the shaft passes through the bottom of the gas injection device;

[0011] The pressure head structure is connected to the bottom of the shaft and is located between the bottom surface of the gas injection device and the top surface of the base. It is detachably connected to the docking part to provide a clamping force on the docking part.

[0012] An elastic component is disposed around the shaft on the top surface of the pressure head structure and is movably inserted through the gas injection device from the bottom surface of the gas injection device, so as to drive the shaft to move toward or away from the base by compression or extension.

[0013] Preferably, the bottom of the gas injection device is provided with a mounting groove, the shaft moves through the mounting groove and its top is movably disposed within the gas injection device, and the top of the elastic component abuts against the bottom of the mounting groove.

[0014] Preferably, when the pressure head structure is detachably connected to the docking part, there is a gap between the pressure head structure and the gas injection device.

[0015] Preferably, the gas injection device has a connected limiting cavity and an axial guiding channel; the axial guiding channel is located between the limiting cavity and the mounting groove and communicates with the mounting groove; the top of the shaft is movably engaged in the limiting cavity to limit the extreme position of the shaft moving toward or away from the base; the shaft moves sequentially through the axial guiding channel and the mounting groove.

[0016] Preferably, the semiconductor growth apparatus further includes a limiting member surrounding the top of the shaft, the limiting member being located within the limiting cavity and having a gap between it and the inner wall of the limiting cavity, the outer diameter of the limiting member being larger than the inner diameter of the axial conduction channel, so as to limit the extreme position of the shaft moving toward the base.

[0017] Preferably, when the pressure head structure is detachably connected to the docking part, the limiting member is suspended in the limiting cavity to avoid motion interference.

[0018] Preferably, the elastic component includes an anti-rotation component and an elastic element. The anti-rotation component is disposed on the top surface of the pressure head structure and surrounds the shaft to adjust its own state during the rotation of the shaft to avoid motion interference with the shaft. The elastic element is disposed between the anti-rotation component and the bottom of the mounting groove and is in a compressed state to provide the clamping force. The elastic element surrounds the shaft and has a gap with the shaft.

[0019] Preferably, one end of the elastic element is movably abutted or fixedly connected to the bottom of the mounting groove, and the other end is movably abutted to the anti-rotation component.

[0020] Preferably, one end of the elastic element is fixedly connected to the anti-rotation component, and the other end is movably abutting against the bottom of the mounting groove.

[0021] Preferably, the anti-rotation component includes a bottom fixed plate, a top movable plate, and a middle movable member; the bottom fixed plate is fixedly disposed on the top surface of the pressure head structure and surrounds the shaft; the top movable plate is suspended around the shaft and has a gap between it and the shaft; the elastic member is disposed between the top movable plate and the bottom of the mounting groove and is in a compressed state; the middle movable member is movably disposed between the top movable plate and the bottom fixed plate, surrounds the shaft and has a gap between it and the shaft, so as to adjust its own state during the movement of the bottom fixed plate with the pressure head structure, thereby preventing the top movable plate and the elastic member from interfering with the movement of the shaft.

[0022] Preferably, the top movable plate and the bottom fixed plate rotate relative to each other, and both the top movable plate and the bottom fixed plate form point contact or surface contact with the middle movable component.

[0023] Preferably, the structure consisting of the middle movable component, the bottom fixed plate, and the top movable plate is a thrust bearing.

[0024] Preferably, both the shaft and the elastic component extend from the bottom surface of the gas injection device into the gas injection device, and each of the gas supply channels is arranged around the shaft and the elastic component.

[0025] Preferably, the mating part and the pressure head structure are detachably connected in a concave-convex fit manner.

[0026] Preferably, the material of the pressure head structure is the same as that of the base, which is beneficial to the temperature uniformity of the base.

[0027] The advantages of the semiconductor growth apparatus equipped with the rotating component described in this invention are as follows:

[0028] The shaft of this application is movably mounted on the gas injection device and penetrates the gas injection device at its bottom. The pressure head structure located between the bottom surface of the gas injection device and the top surface of the base is connected to the bottom of the shaft and is detachably connected to the mating part of the top surface of the base to provide clamping force. The elastic component is disposed around the shaft on the top surface of the pressure head structure and is movably mounted through the gas injection device. This allows the shaft to be moved toward or away from the base by the compression or extension of the elastic component to apply or release clamping force to the mating part of the base. This ensures that the base rotation is not affected, and the stability of the base rotation is achieved by applying clamping force to the base through the cooperation of the shaft, pressure head structure and elastic component. This is beneficial to the uniform growth of the semiconductor material layer on the substrate surface. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the pressure head structure and the docking part being in a pressed state in a semiconductor growth apparatus equipped with a rotating component according to an embodiment of the present invention;

[0030] Figure 2 This is a schematic diagram of the pressure head structure and the docking part being separated in a semiconductor growth apparatus equipped with a rotating component according to an embodiment of the present invention;

[0031] Figure 3 This is a schematic diagram of the gas injection device, shaft, pressure head structure, and elastic component in a semiconductor growth apparatus equipped with a rotating component according to an embodiment of the present invention.

[0032] Figure 4 This is a schematic diagram of the base structure in a semiconductor growth apparatus equipped with a rotating component according to an embodiment of the present invention.

[0033] Explanation of reference numerals in the attached figures:

[0034] 1. Reaction chamber; 11. Cover plate; 2. Base; 21. Docking part; 3. Rotating assembly; 4. Gas injection device; 41. Gas supply channel; 42. Mounting groove; 43. Limiting cavity; 44. Axial guide channel; 45. Spraying part; 5. Shaft; 6. Pressure head structure; 7. Elastic assembly; 71. Anti-rotation assembly; 711. Bottom fixing plate; 712. Top movable plate; 713. Middle movable part; 72. Elastic part; 8. Base plate; 9. Limiting part. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed after the word and its equivalents, but does not exclude other elements or objects.

[0036] To overcome the problems existing in the prior art, the present invention provides a semiconductor growth apparatus equipped with a rotating component, which can improve the rotational stability of the substrate by providing a clamping force to the substrate, thereby facilitating the uniform growth of semiconductor material layers on the substrate surface.

[0037] In some embodiments, reference is made to Figures 1 to 4A semiconductor growth apparatus equipped with a rotating assembly includes a reaction chamber 1, a base 2, a rotating assembly 3, a gas injection device 4, a shaft 5, a pressure head structure 6, and an elastic component 7. The base 2 is disposed within the reaction chamber 1, and its top surface supports a substrate 8 and has a mating portion 21. The rotating assembly 3 is connected to the base 2 and drives the base 2 to rotate. The gas injection device 4 is disposed within the reaction chamber 1 and extends into the reaction chamber 1 opposite the top surface of the base 2. The gas injection device 4 has several gas supply channels 41, each of which connects to the substrate 8 via a side wall of the gas injection device 4. The reaction chamber 1 is connected; the shaft 5 is movably mounted on the gas injection device 4 to move toward or away from the base 2, and the shaft 5 passes through the bottom of the gas injection device 4; the pressure head structure 6 is connected to the bottom of the shaft 5, located between the bottom surface of the gas injection device 4 and the top surface of the base 2, and is detachably connected to the docking part 21 to provide a clamping force on the docking part 21; the elastic component 7 surrounds the shaft 5 and is mounted on the top surface of the pressure head structure 6, and is movably mounted through the gas injection device 4 from the bottom surface of the gas injection device 4, so as to drive the shaft 5 to move toward or away from the base 2 by compression or extension.

[0038] like Figure 1 As shown, after the reaction chamber 1 is closed, the elastic component 7 is compressed, causing the pressure head structure 6 to press down and fit against the base 2. That is, the pressure head structure 6 generates a pressing force on the docking part 21 under the elastic force of the elastic component 7 to maintain a pressing state with the base 2. During the process, the rotating component 3 drives the base 2 to rotate. Under the action of the pressing force, the pressure head structure 6 generates friction between itself and the base 2 and drives the shaft 5 to rotate with the base 2 under the action of the friction force.

[0039] In some embodiments, when the pressure head structure 6 is detachably connected to the docking part 21 under clamping force, there is a gap between the top of the pressure head structure 6 and the gas injection device 4. This avoids motion interference between the gas injection device 4 and the pressure head structure 6, which would affect the normal rotation with the base 2. In some specific embodiments, this gap can be 0.5 mm.

[0040] In some embodiments, not only is the elastic component 7 compressed to provide clamping force when the pressure head structure 6 and the docking part 21 are detachably connected, but the elastic component 7 also remains compressed after the connection between the pressure head structure 6 and the docking part 21 is released. This ensures that the elastic component 7 remains stable relative to the gas injection device 4, preventing motion interference with the shaft 5 caused by excessive extension. Specifically, during the installation of the shaft 5 and the elastic component 7, a preload is applied to the elastic component 7, ensuring that the outer wall of the shaft 5 fits snugly against the inner wall of the gas injection device 4 through which it passes. The degree of fit is controlled to maintain the preload of the elastic component 7 even after the connection between the pressure head structure 6 and the docking part 21 is released. When the connection between the pressure head structure 6 and the docking part 21 is detachable, the shaft 5 can move relative to the gas injection device 4, increasing the compression of the elastic component 7.

[0041] like Figure 2 As shown, when the reaction chamber 1 is opened, the gas injection device 4 rises, causing the pressure head structure 6 to separate from the base 2. The pressure head structure 6 no longer exerts pressure on the base 2, and it separates from the docking part 21, providing operating space for the robotic arm used to transfer the substrate 8. The pressure head structure 6's clamping or disengagement from the base 2 is controlled by the operation of the gas injection device 4. This detachable connection between the pressure head structure 6 and the docking part 21 of the base 2 allows the pressure head structure 6 to be pressed down and locked before the process and released after the process. This adapts to automated systems and makes maintenance operations such as replacement and cleaning of the base 2 or the pressure head structure 6 more convenient, reducing equipment downtime.

[0042] In this application, the shaft 5 is movably mounted on the gas injection device 4 and penetrates the bottom of the gas injection device 4. The pressure head structure 6, located between the bottom surface of the gas injection device 4 and the top surface of the base 2, is connected to the bottom of the shaft 5 and is detachably connected to the mating part 21 on the top surface of the base 2 to provide clamping force. The elastic component 7 is disposed around the shaft 5 on the top surface of the pressure head structure 6 and is movably mounted through the gas injection device 4 from the bottom surface of the gas injection device 4. This allows the shaft 5 to be driven toward or away from the base 2 by the compression or extension of the elastic component 7 to apply or release clamping force to the mating part 21 of the base 2. This ensures that the stability of the base 2 during rotation is achieved by applying clamping force to the base 2 through the cooperation of the shaft 5, the pressure head structure 6, and the elastic component 7 without affecting the normal rotation of the base 2. This is beneficial to the uniform growth of the semiconductor material layer on the substrate surface, that is, improving the film uniformity. Furthermore, since the pressure head structure 6 is located below the gas injection device 4, and the elastic component 7 is located on the pressure head structure 6, and there is a gap between the top of the pressure head structure 6 and the gas injection device 4, this design allows for easy inspection of the state of the elastic component 7 after the pressure head structure 6 is disconnected from the gas injection device 4 and an opening operation is performed, thereby promptly determining whether the elastic component 7 has undergone structural deformation that affects the clamping force.

[0043] This application integrates the shaft 5, the pressure head structure 6, and the elastic component 7 into the gas injection device 4, which simplifies the spatial layout of the bottom of the reaction chamber 1, provides more space for the design and maintenance of key components such as the rotating component and the heater, and reduces the overall structural complexity of the semiconductor growth equipment. Furthermore, by having the elastic component 7 surrounding the shaft 5 on the top surface of the pressure head structure 6, the pressure head structure 6 provides a certain degree of elasticity to the clamping force provided by the mating part 21, rather than rigidly locking it. The elastic component 7 can effectively absorb the dimensional changes caused by thermal expansion of components such as the base 2 and the pressure head structure 6, ensuring the long-term adaptability and safety of the clamping system composed of the shaft 5, the pressure head structure 6, and the elastic component 7.

[0044] In some embodiments, reference is made to Figure 1 and Figure 2 The reaction chamber 1 includes a top cover plate 11. The gas injection device 4 passes through the cover plate 11 and extends into the reaction chamber 1. The specific installation method of the gas injection device 4 and the reaction chamber 1, as well as the specific structure of the cover plate 11 and the reaction chamber 1, are conventional technical means in the field and will not be described in detail here, as it is necessary to ensure the sealing performance of the reaction chamber 1.

[0045] In some embodiments, the rotating assembly 3 includes a rotating spindle connected to the center of the bottom surface of the base 2, and a magnetohydrodynamic (MHD) rotating drive device. The rotating spindle extends to the outside of the reaction chamber 1 in a dynamically sealed manner. The MHD rotating drive device is disposed outside the reaction chamber 1 and rotatably connected to the rotating spindle, and is sealed and adapted to the reaction chamber 1 to drive the base 2 to rotate. The specific implementation of the MHD rotating drive device and its adaptation method to the reaction chamber 1 and the rotating spindle are conventional techniques in the art and will not be described in detail here.

[0046] In some embodiments, the shaft 5 and the pressure head structure 6 are an integral structure.

[0047] In some embodiments, a dynamic seal is formed between the shaft 5 and the gas injection device 4 to reduce or avoid the risk of gas leakage from the assembly space between them, thereby ensuring that the reaction chamber 1 has good sealing performance.

[0048] In some embodiments, the shaft 5 and the pressure head structure 6 are detachably assembled, which facilitates the adaptation of the appropriate pressure head structure 6 according to different selections of the base 2 and the changes in the structure of the docking part 21 provided thereon, so as to improve universality.

[0049] In some embodiments, the shaft 5 and the elastic component 7 are both movably inserted into the gas injection device 4 from the bottom surface of the gas injection device 4, which facilitates the disassembly and assembly of the elastic component 7 after the cavity is opened, while avoiding adverse effects on the sealing performance of the reaction chamber 1 due to the addition of the shaft 5 and the elastic component 7.

[0050] In some embodiments, each of the gas supply channels 41 is arranged around the area where the shaft 5 and the elastic component 7 are located, which helps to avoid interference with the gas flow field caused by the shaft 5, the elastic component 7, and the pressure head structure 6 at the bottom of the shaft 5. The outlet of each of the gas supply channels 41 is ejected through the side wall of the gas injection device 4 and flows through the substrate 8 in a laminar flow manner; the specific implementation method is conventional in the art. In some specific embodiments, refer to... Figures 1 to 3 The sidewall of the gas injection device 4 is provided with a plurality of spray sections 45 along the axial direction of the gas injection device 4. Further, each spray section 45 is an annular spray section arranged circumferentially along the gas injection device 4, or multiple spray sections 45 are spaced apart circumferentially along the gas injection device 4 to form an annular spray section. The gas supply channel 41 is provided with a plurality of channels for respectively introducing different process gases or purge gases, and each gas supply channel 41 is connected to at least one spray section 45 for supplying process gases or purge gases to the spray section 45. Each spray section 45 includes a plurality of outlets for spraying process gases or purge gases into the reaction chamber 1.

[0051] In some embodiments, reference is made to Figures 1 to 3The bottom of the gas injection device 4 is provided with a mounting groove 42, the shaft 5 is movably inserted through the mounting groove 42 and is movably disposed in the gas injection device 4, and the top of the elastic component 7 abuts against the bottom of the mounting groove 42.

[0052] In this embodiment, the structure of the mounting groove 42 provides space for the extension or contraction movement of the elastic component 7, ensuring that the clamping force generated by the elastic component 7 can be transmitted to the base 2 through the pressure head structure 6.

[0053] In some embodiments, the bottom height of the mounting groove 42 is lower than the top surface height of the shaft 5.

[0054] In some embodiments, when the pressure head structure 6 is pressed down to abut against the docking portion 21 of the base 2, most of the elastic component 7 is housed in the mounting groove 42, which can minimize the adverse effects of process gas on the elastic component 7.

[0055] In some embodiments, reference is made to Figures 1 to 3 The gas injection device 4 has a connected limiting cavity 43 and an axial guiding channel 44. The axial guiding channel 44 is located between the limiting cavity 43 and the mounting groove 42 and is connected to the mounting groove 42. The top of the shaft 5 is movably locked in the limiting cavity 43 to limit the extreme position of the shaft 5 towards or away from the base 2. The shaft 5 moves sequentially through the axial guiding channel 44 and the mounting groove 42.

[0056] Compared to external limit switches, independent guide sleeves, or complex support frames that require additional installation, this embodiment integrates the mounting groove 42, the limiting cavity 43, and the axial guide channel 44 inside the gas injection device 4, making the structure of the shaft 5 and the elastic component 7 compact, without affecting the spatial layout of the spray area, and improving the space utilization of the gas injection device 4.

[0057] In some embodiments, the central axis of the limiting cavity 43, the central axis of the axial guiding channel 44, and the central axis of the mounting groove 42 are collinear, and all are collinear with the central axis of the docking part 21, which is beneficial for stable force application.

[0058] In some embodiments, the shaft 5 and the axial passage 44 are dynamically sealed to ensure that the reaction chamber 1 has good sealing performance.

[0059] In other embodiments, a bearing is fitted inside the axial passage 44, and the shaft 5 passes through the bearing and forms a dynamic seal with the inner ring of the bearing to ensure that the reaction chamber 1 has good sealing performance.

[0060] In some embodiments, reference is made to Figures 1 to 3 The semiconductor growth apparatus further includes a limiting member 9 surrounding the top of the shaft 5. The limiting member 9 is located within the limiting cavity 43 and has a gap between it and the inner wall of the limiting cavity 43, so that the limiting member 9 does not interfere with the limiting cavity 43 during movement with the shaft 5, thereby avoiding adverse effects on the normal rotation of the base 2. The outer diameter of the limiting member 9 is larger than the inner diameter of the axial guide channel 44, limiting the extreme position of the shaft 5 towards the base 2. This prevents the pressure head structure 6 connected to the shaft 5 from interfering with the normal rotation of the base 2 due to excessive downward movement.

[0061] In some embodiments, reference is made to Figures 1 to 3 When the pressure head structure 6 is detachably connected to the docking part 21, the limiting member 9 is suspended within the limiting cavity 43 to avoid motion interference. Specifically, there is a gap between the limiting member 9 and the inner sidewall and top wall of the limiting cavity 43 to prevent rigid contact between the limiting member 9 and the limiting cavity 43 when the pressure head structure 6 is in pressure contact with the docking part 21 of the base 2, thus avoiding affecting the normal rotation of the base 2. When the pressure head structure 6 is in contact and pressed with the docking part 21, the top of the shaft 5 drives the limiting member 9 to move towards the base 2, lowering the height of the limiting member 9. In this case, the limiting member 9 can still be suspended within the limiting cavity 43.

[0062] In some embodiments, the limiting member 9 is a flange or a retaining ring, which is fixedly sleeved on the shaft 5. Specifically, the limiting member 9 can be disposed on the top of the shaft 5 through a machining channel above the limiting cavity 43.

[0063] In other embodiments, the limiting member 9 includes several elastic snap-fit ​​structures. The top outer wall of the shaft 5 is circumferentially provided with several receiving grooves. Each elastic snap-fit ​​structure is correspondingly disposed in one of the receiving grooves to retract into the receiving grooves under force, and to protrude from the outer wall of the shaft 5 after the external force is removed. The outer diameter of the snap-fit ​​ring structure formed by the protruding elastic snap-fit ​​structures is larger than the inner diameter of the axial passage 44. This facilitates the limiting member 9 passing through the axial passage 44 and being installed in the limiting cavity 43, thus allowing the shaft 5 to be installed in the gas injection device 4.

[0064] In some embodiments, reference is made to Figures 1 to 3The elastic component 7 includes an anti-rotation component 71 and an elastic element 72; the anti-rotation component 71 is disposed on the top surface of the pressure head structure 6 and surrounds the shaft 5 to adjust its own state during the rotation of the shaft 5 to avoid motion interference with the shaft 5; the elastic element 72 is disposed between the anti-rotation component 71 and the bottom of the mounting groove 42 and is in a compressed state to provide the clamping force, and the elastic element 72 surrounds the shaft 5 and has a gap with the shaft 5.

[0065] During equipment operation, the base 2 is driven to rotate by the rotating component 3 at the bottom. The rotational torque is transmitted to the shaft 5 through the adaptation between the base 2 and the pressure head structure 6. If this torque is transmitted to the upper elastic element 72, it will cause the elastic element 72 to twist and deform significantly, thereby affecting the clamping force. The anti-rotation component 71 in this embodiment can effectively prevent the elastic element 72 from undergoing torsional plastic deformation or stress disorder that would affect the normal rotation of the base 2, and can also prevent unnecessary motion interference between the elastic element 72 and the gas injection device 4, thus improving the reliability of the equipment.

[0066] In addition, in this embodiment, the elastic element 72 surrounds the shaft 5, but there is a gap between the elastic element 72 and the shaft 5, so that even if the elastic element 72 undergoes lateral deformation during compression, it will not interfere with the movement of the shaft 5.

[0067] In some specific embodiments, the elastic element 72 is a spring.

[0068] In some embodiments, by selecting elastic elements 72 of different specifications, the magnitude of the clamping force can be precisely designed and adjusted to meet the needs of different types of bases 2 and rotation speeds.

[0069] In some embodiments, one end of the elastic element 72 is movably abutted or fixedly connected to the bottom of the mounting groove 42, and the other end is movably abutted to the anti-rotation component 71. That is, the fixed movable point is set near the actuating end (anti-rotation component 71), while the connection to the bottom of the mounting groove 42 can be flexibly selected (movable or fixed). In other embodiments, one end of the elastic element 72 is fixedly connected to the anti-rotation component 71, and the other end is movably abutted to the bottom of the mounting groove 42. These two configurations facilitate the disassembly and maintenance of the elastic element 72, and reduce or even avoid the impact of axial torque on the output of the appropriate clamping force.

[0070] In some embodiments, when the pressure head structure 6 and the docking part 21 are detachably connected or disconnected, the elastic element 72 is always in a compressed state, differing only in the degree of compression. This allows the axial position of the elastic element 72 to be relatively stable, effectively preventing force direction drift and energy loss caused by loosening or misalignment of the support point, as well as potential motion interference. This also facilitates the application of appropriate clamping force from the pressure head structure 6 to the docking part 21 during the normal rotation of the base 2, thus promoting rotational stability. In the above cases, at least one end of the elastic element 72 needs to be in contact with the adjacent structure.

[0071] In some embodiments, when there is a clamping force between the pressure head structure 6 and the docking portion 21, the elastic member 72 is in a compressed state; when the clamping force between the pressure head structure 6 and the docking portion 21 is released, the elastic member 72 is in an extended state. In the above cases, it is preferable that at least one end of the telescopic member in the elastic member 72 is fixedly connected to an adjacent structure to facilitate the relative stability of the axial position of the elastic member 72.

[0072] In some embodiments, reference is made to Figures 1 to 3 The anti-rotation component 71 includes a bottom fixed plate 711, a top movable plate 712, and a middle movable member 713. The bottom fixed plate 711 is fixedly disposed on the top surface of the pressure head structure 6 and surrounds the shaft 5. The top movable plate 712 is suspended around the shaft 5 and has a gap between it and the shaft 5. The elastic member 72 is disposed between the top movable plate 712 and the bottom of the mounting groove 42 and is in a compressed state. The middle movable member 713 is movably disposed between the top movable plate 712 and the bottom fixed plate 711, surrounds the shaft 5 and has a gap between it and the shaft 5, so as to adjust its own state during the movement of the bottom fixed plate 711 with the pressure head structure 6, thereby preventing the top movable plate 712 and the elastic member 72 from interfering with the movement of the shaft 5.

[0073] In this embodiment, the bottom fixing plate 711 is fixed to the top surface of the pressure head structure 6 to move synchronously with the pressure head structure 6. The bottom fixing plate 711 transmits axial torque. The middle movable member 713 can reduce or prevent the transmission of axial torque to the upper movable plate 712 and the elastic member 72. The upper movable plate 712 serves as a support platform for the elastic member 72, preventing the elastic member 72 from being affected by axial torque and thus ensuring the output of the appropriate clamping force.

[0074] In this embodiment, there is a gap between the top movable plate 712 and the shaft 5, and between the middle movable member 713 and the shaft 5. Combined with the self-adjusting capability of the middle movable member 713, it is ensured that there is not much motion interference between the shaft 5 and the anti-rotation component 71 that would affect the normal rotation of the base 2. Moreover, it enables the elastic member 72 to apply a suitable clamping force to the base 2, which is beneficial to the dynamic rotational stability of the base 2.

[0075] In some embodiments, reference is made to Figures 1 to 3 The top movable plate 712 and the bottom fixed plate 711 rotate relative to each other, and both the top movable plate 712 and the bottom fixed plate 711 form point contact or surface contact with the middle movable member 713. The bottom fixed plate 711 rotates synchronously with the pressure head structure 6 and the shaft 5. The middle movable member 713 adjusts its own position through point contact or surface contact with the bottom fixed plate 711 and the top movable plate 712, and there is a gap between itself and the shaft 5 to avoid motion interference. The top movable plate 712 is suspended and has a gap between itself and the shaft 5 to avoid motion interference. The top movable plate 712 confines the elastic member 72 it carries within a relatively stable area, so that there is no motion interference between the elastic member 72 and the shaft 5 and a relatively stable clamping force can be output to the base 2.

[0076] In some specific embodiments, reference is made to Figures 1 to 3 The middle movable component 713 includes a plurality of balls. The working surfaces of the bottom fixed plate 711 and the top movable plate 712 opposite each other are provided with a plurality of first grooves adapted to the balls. The working surfaces of the top movable plate 712 and the bottom fixed plate 711 opposite each other are provided with a plurality of second grooves adapted to the balls. The first grooves and the second grooves are arranged in a one-to-one correspondence. The balls are movably arranged between the first grooves and the second grooves to form a rolling fit. There is a gap between each ball and the shaft 5.

[0077] In some embodiments, reference is made to Figures 1 to 3 Both the top movable plate 712 and the bottom fixed plate 711 are annular plates, and the working surface of the annular plate is provided with a number of grooves that are adapted to the ball bearings.

[0078] In some specific embodiments, the structure consisting of the top movable plate 712, the bottom fixed plate 711, and the middle movable member 713 is a thrust bearing.

[0079] In some embodiments, reference is made to Figures 1 to 4 The mating part 21 and the pressure head structure 6 are detachably connected by a concave-convex fit. When the pressure head structure 6 is pressed down, the inclined surface or sidewall of the concave-convex fit can automatically guide the two to slide into the correct position until they fit together.

[0080] In some embodiments, the material of the pressure head structure 6 is the same as that of the base 2, in order to improve the temperature uniformity of the base 2.

[0081] In the epitaxial growth process, the substrate 2 (e.g., graphite) is heated. The pressure head structure 6, as the component in close contact with and applying pressure, can become a source of thermal interference if its material differs from the substrate 2 (e.g., metal or ceramic) due to their different thermal conductivity, heat capacity, and coefficient of thermal expansion. This embodiment uses a pressure head structure 6 made of the same material as the substrate 2 (e.g., both are made of graphite). Both exhibit consistent thermophysical behavior when heated, ensuring unobstructed and uniform heat transfer between them at the interface. This prevents the formation of localized hot or cold spots due to uneven interface thermal resistance, and ensures that both have the same surface emissivity, resulting in highly balanced heat exchange in the high-temperature region where radiative heat transfer is dominant.

[0082] Different materials expand at different rates at high temperatures. If the pressure head structure 6 and the base 2 are made of different materials, even if the pressure head structure 6 and the mating part 21 are initially precisely fitted, the difference in expansion after heating will generate huge contact surface shear stress or cause structural bending deformation. This may lead to micro-slippage of the connection interface, destroying the alignment accuracy, and causing the pressure head structure 6 or the base 2 itself to warp. In severe cases, cracks may occur, leading to component damage. In this embodiment, the material of the pressure head structure 6 is consistent with the material of the base 2, ensuring that their thermal expansion is synchronized, eliminating thermal stress, thereby maintaining the positioning accuracy of the concave-convex mating connection at high temperatures, and improving the long-term mechanical reliability of the pressure head structure 6 in thermal cycling.

[0083] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the invention as set forth in the claims. Furthermore, the invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A semiconductor growth apparatus equipped with a rotating component, characterized in that, include: A reaction chamber and a base disposed within the reaction chamber, the top surface of the base being used to support the substrate and having a mating portion; A rotating component, connected to the base, is used to drive the base to rotate; A gas injection device is disposed in the reaction chamber and extends into the reaction chamber opposite the top surface of the base. The gas injection device is provided with a plurality of gas supply channels, and each gas supply channel communicates with the reaction chamber through the side wall of the gas injection device. A shaft is movably mounted on the gas injection device to move toward or away from the base, and the shaft passes through the bottom of the gas injection device; The pressure head structure is connected to the bottom of the shaft and is located between the bottom surface of the gas injection device and the top surface of the base. It is detachably connected to the docking part to provide clamping force. An elastic component is disposed around the shaft on the top surface of the pressure head structure and is movably inserted through the gas injection device from the bottom surface of the gas injection device, so as to drive the shaft to move toward or away from the base by compression or extension.

2. The semiconductor growth apparatus equipped with a rotating component according to claim 1, characterized in that, The bottom of the gas injection device is provided with an installation groove, the shaft moves through the installation groove and its top is movably disposed in the gas injection device, and the top of the elastic component abuts against the bottom of the installation groove.

3. The semiconductor growth apparatus equipped with a rotating component according to claim 2, characterized in that, When the pressure head structure is detachably connected to the docking part, there is a gap between the pressure head structure and the gas injection device.

4. The semiconductor growth apparatus equipped with a rotating component according to claim 2, characterized in that, The gas injection device has a connected limiting cavity and an axial guiding channel; the axial guiding channel is located between the limiting cavity and the mounting groove and communicates with the mounting groove; the top of the shaft is movably locked in the limiting cavity to limit the extreme position of the shaft moving toward or away from the base; the shaft moves sequentially through the axial guiding channel and the mounting groove.

5. The semiconductor growth apparatus equipped with a rotating component according to claim 4, characterized in that, It also includes a limiting member surrounding the top of the shaft, the limiting member being located within the limiting cavity and having a gap between it and the inner wall of the limiting cavity, the outer diameter of the limiting member being larger than the inner diameter of the shaft guiding channel, so as to limit the extreme position of the shaft moving toward the base.

6. The semiconductor growth apparatus equipped with a rotating component according to claim 5, characterized in that, When the pressure head structure is detachably connected to the docking part, the limiting member is suspended in the limiting cavity to avoid motion interference.

7. The semiconductor growth apparatus equipped with a rotating component according to claim 2, characterized in that, The elastic component includes: An anti-rotation component is disposed on the top surface of the pressure head structure and surrounds the shaft to adjust its own state during the rotation of the shaft to avoid motion interference with the shaft; An elastic element is disposed between the anti-rotation component and the bottom of the mounting groove and is in a compressed state to provide the clamping force. The elastic element surrounds the shaft and has a gap between it and the shaft.

8. The semiconductor growth apparatus equipped with a rotating component according to claim 7, characterized in that, One end of the elastic element is movably abutted or fixedly connected to the bottom of the mounting groove, and the other end is movably abutted to the anti-rotation component; Alternatively: one end of the elastic element is fixedly connected to the anti-rotation component, and the other end is movably abutting against the bottom of the mounting groove.

9. The semiconductor growth apparatus equipped with a rotating component according to claim 7, characterized in that, The anti-rotation component includes: A bottom fixing plate is fixedly disposed on the top surface of the pressure head structure and surrounds the shaft; A top movable plate is suspended around the shaft and has a gap between it and the shaft. The elastic element is located between the top movable plate and the bottom of the mounting groove and is in a compressed state. The middle movable component is movably disposed between the top movable plate and the bottom fixed plate, surrounds the shaft and has a gap with the shaft, so as to adjust its own state during the movement of the bottom fixed plate with the pressure head structure, thereby preventing the top movable plate and the elastic component from interfering with the shaft.

10. The semiconductor growth apparatus equipped with a rotating component according to claim 9, characterized in that, The top movable plate and the bottom fixed plate rotate relative to each other, and both the top movable plate and the bottom fixed plate form point contact or surface contact with the middle movable component.

11. The semiconductor growth apparatus with a rotating component according to claim 10, characterized in that, The structure consisting of the middle movable component, the bottom fixed plate, and the top movable plate is a thrust bearing.

12. The semiconductor growth apparatus equipped with a rotating component according to claim 1, characterized in that, Both the shaft and the elastic component extend from the bottom surface of the gas injection device into the gas injection device, and each of the gas supply channels is arranged around the shaft and the elastic component.

13. The semiconductor growth apparatus equipped with a rotating component according to claim 1, characterized in that, The docking part and the pressure head structure are detachably connected by a concave-convex fit.

14. The semiconductor growth apparatus equipped with a rotating component according to claim 1, characterized in that, The material of the pressure head structure is the same as that of the base, which is beneficial to the temperature uniformity of the base.

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