Optical device and manufacturing method thereof

Abstract

An optical device and a method of manufacturing the same are presented in which an optical fiber array unit is connected to a first optical package. In an embodiment, the fiber array unit is passively aligned using the first protrusions and the openings, and then actively aligned after the passively aligned. Once aligned, the fiber array units are bonded using an adhesive.

Description

Technical Field

[0001] Embodiments of this application relate to optical devices and methods of manufacturing the same. Background Technology

[0002] Electrical signal processing is a technology used for signal transmission and processing. In recent years, optical signal processing has been used in an increasing number of applications, especially due to the use of fiber optic related applications for signal transmission.

[0003] Optical signal processing is often combined with electrical signal processing to provide robust applications. For example, optical fibers can be used for long-distance signal transmission, while electrical signals can be used for short-distance signal transmission, processing, and control. Therefore, devices integrating long-distance optical components and short-distance electronic components have been developed for the conversion between optical and electrical signals, as well as the processing of both. Consequently, packages can include optical (photonic) dies containing optical components and electronic dies containing electronic components. Summary of the Invention

[0004] Some embodiments of this application provide a method for manufacturing an optical device, the method comprising: attaching a semiconductor chip to an optical interposer, the optical interposer including at least one waveguide; and attaching a support substrate over the semiconductor chip, wherein, after attachment, the support substrate includes alignment openings.

[0005] Other embodiments of this application provide a method for manufacturing an optical device, the method comprising: receiving a first optical package; inserting a first protrusion into an opening to align a fiber array unit with the first optical package; and, after the insertion, actively aligning the fiber array unit with the first optical package.

[0006] Further embodiments of this application provide an optical device including: a first optical package; a fiber array unit connected to the first optical package via a protrusion located in a first opening; and an adhesive located between the first optical package and the fiber array unit. Attached Figure Description

[0007] The various aspects of the invention will be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industrial practice, the components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the components may be arbitrarily increased or decreased.

[0008] Figures 1 to 9 The formation of a first optical package according to some embodiments is shown.

[0009] Figures 10A to 10FThe attachment of a fiber array unit to a first optical package according to some embodiments is shown.

[0010] Figure 11 Another embodiment, according to some embodiments, is shown in which the protrusion is located on the first optical package.

[0011] Figure 12 Another embodiment of a series of openings, according to some embodiments, is shown.

[0012] Figure 13 Another embodiment of a series of openings, according to some embodiments, is shown. Detailed Implementation

[0013] The following disclosure provides numerous different embodiments or instances for implementing various features of the embodiments of this disclosure. Specific examples of components and arrangements are described below to simplify the invention. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component on or over a second component may include embodiments where the first and second components are in direct contact, and may also include embodiments where an additional component may be formed between the first and second components, thereby allowing the first and second components to not be in direct contact. Furthermore, reference numerals and / or characters may be repeated in various instances of the invention. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0014] Furthermore, for ease of description, this document uses spatial relative terms such as “below,” “under,” “lower,” “above,” and “upper” to describe the relationship between one element or component and another (or other elements or components) as shown in the figures. In addition to the orientations depicted in the figures, spatial relative terms are intended to include different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted accordingly.

[0015] Embodiments will now be discussed with reference to specific examples, wherein the fiber array unit is connected to the optical package using both passive and active alignment methods, wherein the passive alignment method further helps to prevent adhesive contamination on lenses located within the optical package. However, the presented embodiments are intended to be illustrative and are not intended to limit the presented ideas to the precise embodiments described. Rather, the presented ideas can be incorporated into a variety of embodiments, and all such embodiments are included within the overall scope of this disclosure.

[0016] Now for reference Figure 1 According to some embodiments, an optical interposer 100 is shown (see...). Figure 5 The initial structure of ). Figure 1 In the specific embodiment shown, the optical interposer 100 is a photonic integrated circuit (PIC) and at this stage includes a first substrate 101, a first insulating layer 103, and a first optical component 203 (not shown in the original text). Figure 1 It is shown separately in the text, but will be combined below. Figure 2 (Further shown and discussed) Material layer 105 of the first active layer 201. In embodiments, at the start of the fabrication process of the optical interposer 100, the first substrate 101, the first insulating layer 103, and the material layer 105 of the first active layer 201 for the first optical component 203 may collectively be part of a silicon-on-insulator (SOI) substrate. Looking first at the first substrate 101, the first substrate 101 may be a semiconductor material such as silicon or germanium, a dielectric material such as glass, or any other suitable material that allows for structural support for the devices thereon.

[0017] The first insulating layer 103 may be a dielectric layer that separates the first substrate 101 from the first active layer 201 thereon, and in some embodiments, may additionally be part of a covering material surrounding the subsequently fabricated first optical component 203 (discussed further below). In embodiments, the first insulating layer 103 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations thereof, etc., formed using methods such as implantation (e.g., to form a buried oxide (BOX) layer), or it may be formed by deposition onto the first substrate 101 using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations thereof, etc. However, any suitable materials and fabrication methods may be used.

[0018] The material 105 used for the first active layer 201 is initially (before patterning) a conformal material layer that will be used to begin fabricating the first active layer 201 of the first optical component 203. In one embodiment, the material 105 used for the first active layer 201 may be a translucent material that can be used as a core material for the desired first optical component 203, such as a semiconductor material, such as silicon, germanium, silicon-germanium, or combinations thereof; while in other embodiments, the material 105 used for the first active layer 201 may be a dielectric material such as silicon nitride, but in other embodiments, the material 105 used for the first active layer 201 may be a group III-V material, lithium niobate, or a polymer. In embodiments where the material 105 is deposited, the material 105 used for the first active layer 201 may be deposited by methods such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, or combinations thereof. In other embodiments, where the first insulating layer 103 is formed using an implantation method, the material 105 of the first active layer 201 may initially be part of the first substrate 101 prior to the implantation process to form the first insulating layer 103. However, the material 105 of the first active layer 201 can be formed using any suitable materials and manufacturing methods.

[0019] Figure 2 The diagram illustrates that once the material 105 for the first active layer 201 is ready, the first optical component 203 of the first active layer 201 is fabricated using the material 105 for the first active layer 201. In embodiments, the first optical component 203 of the first active layer 201 may include components such as optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers, which are narrow waveguides with a width between about 1 nm and about 200 nm, etc.), directional couplers, optical modulators (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, opto-to-electric converters (e.g., PN junctions), electro-to-optic converters, lasers, combinations thereof, etc. However, any suitable first optical component 203 may be used.

[0020] To begin forming the first active layer 201 of the first optical component 203 from initial material, the material 105 for the first active layer 201 can be patterned into a desired shape for the first active layer 201 of the first optical component 203. In embodiments, the material 105 for the first active layer 201 can be patterned using, for example, one or more photolithographic masks and etching processes. However, any suitable method can be used to pattern the material 105 for the first active layer 201. For some first optical components 203, such as waveguides or edge couplers, the patterning process may be the fabrication of all or at least most of these first optical components 203.

[0021] Figure 3 This illustrates that for components utilizing further manufacturing processes, such as Mach-Zehnder silicon photonic switches employing resistance heating elements, additional processing can be performed before or after material patterning for the first active layer 201. For example, implantation processes, additional deposition and patterning processes for different materials (e.g., resistance heating elements, III-V materials for converters), combinations of all these processes, etc., can all be used to facilitate further fabrication of the respective desired first optical components 203. In a particular embodiment, and as shown... Figure 3 Specifically, in some embodiments, epitaxial deposition of a semiconductor material 301, such as germanium (for example, electro / optical signal modulation and conversion), can be performed on a patterned portion of the material 105 of the first active layer 201. In such embodiments, the semiconductor material 301 can be epitaxially grown to aid in the fabrication of a photodiode, for example, for a photoelectric converter. All such fabrication processes and all suitable first optical components 203 can be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0022] Figure 4It is shown that once the various first optical components 203 of the first active layer 201 have been formed, a second insulating layer 401 can be deposited to cover the first optical components 203 and provide additional encapsulation material. In an embodiment, the second insulating layer 401 may be a dielectric layer that separates the various components of the first active layer 201 from each other and from the above structure, and may additionally serve as another part of the encapsulation material surrounding the first optical components 203. In an embodiment, the second insulating layer 401 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations thereof, etc., formed using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations thereof, etc. Once the material of the second insulating layer 401 has been deposited, the material may be planarized, for example using a chemical mechanical polishing process, to planarize the top surface of the second insulating layer 401 (in embodiments where the second insulating layer 401 is intended to completely cover the first optical components 203), or to planarize the second insulating layer 401 together with the top surface of the first optical components 203. However, any suitable material and manufacturing method may be used.

[0023] Figure 5 It is shown that once the first optical component 203 of the first active layer 201 has been manufactured and the second insulating layer 401 has been formed, a first metallization layer 501 is formed to electrically connect the first active layer 201 of the first optical component 203 to the control circuit, to each other, and to subsequently attached devices (not shown in the diagram). Figure 5 As shown in the text, but will be combined below. Figure 6 (Further shown and described). In an embodiment, the first metallization layer 501 is formed of alternating layers of dielectric and conductive materials and can be formed by any suitable process (such as deposition, damascene, dual damascene, etc.). In a particular embodiment, multiple metallization layers may be used to interconnect the respective first optical components 203, but the exact number of first metallization layers 501 depends on the design of the optical interposer 100.

[0024] Furthermore, during the fabrication of the first metallization layer 501, one or more second optical devices 503 may be formed as part of the first metallization layer 501. In some embodiments, the second optical devices 503 of the first metallization layer 501 may include components such as couplers (e.g., edge couplers, grating couplers, etc.) for connection to external signals, optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, opto-to-electric converters (e.g., PN junctions), electro-to-optic converters, lasers, combinations thereof, etc. However, any suitable optical device may be used for one or more second optical devices 503.

[0025] In an embodiment, one or more second optical devices 503 may be formed by initially depositing a material for the one or more second optical devices 503. In an embodiment, the material for the one or more second optical devices 503 may be a dielectric material such as silicon nitride, silicon oxide, or combinations thereof, or a semiconductor material such as silicon, deposited using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, or combinations thereof. However, any suitable material and any suitable deposition method may be used.

[0026] Once the material for one or more second optical devices 503 has been deposited or otherwise formed, the material can be patterned into the desired shape for the one or more second optical devices 503. In embodiments, the material for one or more second optical devices 503 can be patterned using, for example, one or more photolithographic masks and etching processes. However, any suitable patterning method for the material for one or more second optical devices 503 can be used.

[0027] For some of the one or more second optical devices 503, such as waveguides or edge couplers, patterning processes may be all or at least most of the manufacturing processes used to form these components. Furthermore, for those components utilizing further manufacturing processes, such as Mach-Zehnder silicon photonic switches using resistance heating elements, additional processing may be performed before or after the material patterning used for the one or more second optical devices 503. For example, implantation processes, additional deposition and patterning processes for different materials, combinations of all these processes, etc., may be used to facilitate the further fabrication of the various desired one or more second optical devices 503. All such manufacturing processes and all suitable one or more second optical devices 503 can be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0028] Once one or more second optical devices 503 of the first metallization layer 501 have been fabricated, a first bonding layer 505 is formed over the first metallization layer 501. In embodiments, the first bonding layer 505 can be used for dielectric-dielectric and metal-metal bonding. According to some embodiments, the first bonding layer 505 is formed of a first dielectric material 509, such as silicon oxide, silicon nitride, etc. The first dielectric material 509 can be deposited using any suitable method, such as CVD, high-density plasma chemical vapor deposition (HDPCVD), PVD, atomic layer deposition (ALD), etc. However, any suitable materials and deposition processes can be used.

[0029] Once the first dielectric material 509 has been formed, a first opening is formed in the first dielectric material 509 to expose the conductive portion of the underlying layer, thereby preparing for the formation of a first bonding pad 507 within the first bonding layer 505. Once the first opening has been formed within the first dielectric material 509, it can be filled with a seed layer and plating metal to form the first bonding pad 507 within the first dielectric material 509. The seed layer can be blanket-deposited over the top surface of the first dielectric material 509, the exposed conductive portion of the underlying layer, and the sidewalls of the opening and the second opening. The seed layer may include a copper layer. The seed layer can be deposited using processes such as sputtering, evaporation, or plasma-enhanced chemical vapor deposition (PECVD), depending on the desired material. The plating metal can be deposited over the seed layer using plating processes such as electroplating or electroless plating. The plating metal may include copper, copper alloys, etc. The plating metal may be a filler material. Prior to the seed layer, a barrier layer (not shown separately) can be blanket-deposited over the top surface of the first dielectric material 509 and the sidewalls of the opening and the second opening. The barrier layer may include titanium, titanium nitride, tantalum, tantalum nitride, etc.

[0030] After filling the first opening, a planarization process (such as chemical mechanical polishing (CMP)) is performed to remove excess portions of the seed layer and plating metal, thereby forming a first bonding pad 507 within the first bonding layer 505. In some embodiments, the first bonding pad 507 may also be connected to an underlying conductive portion via a bonding pad via (not shown separately), and the first bonding pad 507 may be connected to the first metallization layer 501 via the underlying conductive portion.

[0031] Furthermore, the first bonding layer 505 may also include one or more third optical devices 511, which are bonded to the first bonding layer 505. In such embodiments, prior to the deposition of the first dielectric material 509, the one or more third optical devices 511 may be fabricated using methods and materials similar to those used for the one or more second optical devices 503 (as described above), such as waveguides and other structures formed at least partially by deposition and patterning processes. However, any suitable structure, material, and manufacturing method may be used.

[0032] Figure 6The bonding of a first semiconductor device 601 to a first bonding layer 505 of an optical interposer 100 is illustrated. According to some embodiments, the first semiconductor device 601 is an electronic integrated circuit (EIC—e.g., a device without optical components) and may have a semiconductor substrate 603, an active device layer 605, an interconnect structure 607, a second bonding layer 609, and an associated third bonding pad 611. In embodiments, the semiconductor substrate 603 may be similar to the first substrate 101 (e.g., a semiconductor material such as silicon or silicon-germanium), the active device 605 may be a transistor, capacitor, resistor, etc., formed above the semiconductor substrate 603, the interconnect structure 607 may be similar to the first metallization layer 501 (without optical components), the second bonding layer 609 may be similar to the first bonding layer 505, and the third bonding pad 611 may be similar to the first bonding pad 507. However, any suitable device may be used.

[0033] In this embodiment, the first semiconductor device 601 may be configured to work in conjunction with the optical interposer 100 to achieve the desired functionality. In some embodiments, the first semiconductor device 601 may be a high-bandwidth memory (HBM) module, xPU, logic die, 3DIC die, CPU, GPU, SoC die, MEMS die, or a combination thereof. Any suitable device with any appropriate functionality may be employed, and all such devices are fully intended to be included within the scope of this embodiment.

[0034] In embodiments, the first semiconductor device 601 and the first bonding layer 505 can be bonded using dielectric-dielectric and metal-metal bonding processes. In specific embodiments utilizing dielectric-dielectric and metal-metal bonding processes, the process can be initiated by activating the surfaces of the second bonding layer 609 and the first bonding layer 505. Activating the top surfaces of the first bonding layer 505 and the second bonding layer 609 can include, for example, dry processing, wet processing, plasma processing, exposure to inert gas plasma, exposure to H2, exposure to N2, exposure to O2, or combinations thereof. In embodiments using wet processing, RCA cleaning can be employed. In another embodiment, the activation process can include other processing types. The activation process facilitates the bonding of the first bonding layer 505 and the second bonding layer 609.

[0035] Following the activation process, the optical interposer 100 and the first semiconductor device 601 can be cleaned using, for example, a chemical rinsing agent. The first semiconductor device 601 is then aligned and positioned to physically contact the optical interposer 100. The optical interposer 100 and the first semiconductor device 601 are then subjected to heat treatment and contact pressure to bond the optical interposer 100 to the laser die 600. For example, the optical interposer 100 and the first semiconductor device 601 may be subjected to pressures of about 200 kPa or less and fused at temperatures of about 25°C to about 250°C. The optical interposer 100 and the first semiconductor device 601 may then be subjected to temperatures equal to or higher than the eutectic point of the materials of the first bonding pad 507 and the third bonding pad 611 (e.g., between about 150°C and about 650°C) to fuse the metals. In this way, the optical interposer 100 and the first semiconductor device 601 form a dielectric-to-dielectric and metal-to-metal bonding device. In some embodiments, the joined dies may subsequently be baked, annealed, pressed, or otherwise treated to strengthen or ultimately complete the joint.

[0036] Furthermore, while specific processes for initiating and strengthening the bond have been described, these descriptions are exemplary only and not intended to limit the embodiments. Instead, any suitable combination of baking, annealing, pressing, or other processes may be employed. All such processes are explicitly included within the scope of the embodiments.

[0037] Figure 6 It is also shown that once the first semiconductor device 601 has been bonded, a first gap filler material 613 is deposited to fill the space around the first semiconductor device 601 and provide additional support. In embodiments, the first gap filler material 613 may be a material such as silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof, deposited to fill and overfill the space around the first semiconductor device 601. However, any suitable material and deposition method may be used.

[0038] Once the first gap filler material 613 has been deposited, it can be planarized to expose the first semiconductor device 601. In embodiments, the planarization process can be a chemical mechanical planarization process, a polishing process, etc. However, any suitable planarization process can be used.

[0039] Figure 7 The diagram illustrates a support substrate 701 attached to a first semiconductor device 601 and a first gap filler 613. According to an embodiment, the support substrate 701 may be a support material transparent to light of the desired wavelength, such as silicon, and may use, for example, an adhesive (not in...). Figure 7(Shown separately) Attachment. However, in other embodiments, the support substrate 701 may be attached to the first semiconductor device 601 and the first gap filler material 613 using, for example, a bonding process. Any suitable method may be used to attach the support substrate 701.

[0040] Figure 7 It is also shown that the support substrate 701 includes a first coupling lens 703, which is positioned to facilitate access from the fiber array unit 1001 (not in the fiber array unit 1001). Figure 7 (As shown in the figure, but further shown and described with reference to FIG10) movement. According to an embodiment, the first coupling lens 703 can be formed by shaping the material of the support substrate (e.g., silicon) using a masking process and an etching process. However, any suitable process can be used.

[0041] Furthermore, if desired, a first anti-reflective coating (ARC) 705 may be formed on the first coupling lens 703. According to an embodiment, the first anti-reflective coating 705 may be one or more material layers that help prevent unwanted reflections when light is focused through the first coupling lens 703. In a particular embodiment, the one or more material layers may be materials such as silicon oxide, silicon nitride, or combinations thereof, formed using processes such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, oxidation, nitriding, or combinations thereof.

[0042] In a particular embodiment, the first antireflective coating 705 may be formed using a first silicon oxide layer and a first silicon nitride layer formed over the first silicon oxide layer. A second silicon oxide layer and a second silicon nitride layer are deposited over the first silicon oxide layer and the first silicon nitride layer, thereby forming an alternating stack of silicon oxide and silicon nitride. Once all the desired layers have been deposited, these layers can be patterned using, for example, photolithography and etching processes. However, any suitable combination of materials and processes may be used.

[0043] also, Figure 7 The diagram also shows a support substrate 701 including a first opening 707 positioned to facilitate placement of the fiber array unit 1001. According to an embodiment, the first opening 707 can be formed by molding the support substrate material (e.g., silicon) using a mask and etching process, or formed simultaneously with or separately from the first coupling lens 703. However, any suitable process may also be used.

[0044] Figure 8The removal of the first substrate 101 and optionally the first insulating layer 103 is illustrated, thereby exposing the first active layer 201 of the first optical component 203. In embodiments, planarization processes (e.g., chemical mechanical polishing, grinding, one or more etching processes, combinations of these processes, etc.) can be used to remove the first substrate 101 and the first insulating layer 103. However, any suitable method may be used to remove the first substrate 101 and / or the first insulating layer 103.

[0045] Once the first substrate 101 and the first insulating layer 103 have been removed, a second active layer 801 of the fourth optical component 803 can be formed on the back side of the first active layer 201. In an embodiment, the second active layer 801 of the fourth optical component 803 may be the same as that of the second optical component 503 with the first metallization layer 501 (see above). Figure 5 Similar materials and similar processes are used to form the fourth optical component 803. For example, the second active layer 801 of the fourth optical component 803 may be formed by alternating layers of cladding material (such as silicon oxide) and core material (such as silicon nitride) (formed using deposition and patterning processes) to form an optical component such as a waveguide.

[0046] Figure 9 The formation of a first through-device via (TDV) 901 and a third bonding layer 903 is illustrated to form a first optical package 900, which in some embodiments is an optical engine. In one embodiment, the first TDV 901 extends through a second active layer 801 and a first active layer 201 to provide a fast path for power, data, and ground through an optical interposer 100. In another embodiment, the first TDV 901 can be formed by first forming a TDV opening in the optical interposer 100. The TDV opening can be formed by applying and developing a suitable photoresist (not shown) and removing exposed portions of the second active layer 801 and the optical interposer 100.

[0047] Once a through-device via opening has been formed within the optical interposer 100, the through-device via opening may be lined with a pad. The pad may be, for example, an oxide or silicon nitride formed of tetraethyl orthosilicate (TEOS), but may optionally be any suitable dielectric material. The pad may be formed using a plasma-enhanced chemical vapor deposition (PECVD) process, but may also be formed using other suitable processes, such as physical vapor deposition or thermal processes.

[0048] Once a liner has been formed along the sidewalls and bottom of the through-hole opening, a barrier layer (not shown separately) can be formed, and the remaining portion of the through-hole opening can be filled with a first conductive material. The first conductive material may include copper, but other suitable materials such as aluminum, alloys, doped polysilicon, combinations thereof, etc., may also be used. The first conductive material can be formed by electroplating copper onto a seed layer (not shown), filling and passing through the through-hole opening. Once the through-hole opening is filled, any excess liner, barrier layer, seed layer, and first conductive material outside the through-hole opening can be removed by a planarization process (e.g., chemical mechanical polishing (CMP)), but any suitable removal process may also be used.

[0049] Optionally, according to some embodiments, once the first through-hole 901 has been formed, the second metallization layer (not on) Figure 9 (Shown separately) It can be formed to be electrically connected to the first through-hole 901. In an embodiment, the second metallization layer can be formed as described above with respect to the first metallization layer 501, such as using an alternating layer of dielectric and conductive materials using a damascene process, dual damascene process, etc. In other embodiments, a plating process can be used to form and shape the conductive material, and then the conductive material is covered with a dielectric material to form the second metallization layer. However, any suitable structure and method may also be used.

[0050] A third bonding layer 903 is formed to provide electrical connection between the optical interposer 100 and subsequently attached devices. In embodiments, the third bonding layer 903 may be similar to the first bonding layer 505, for example having a third bonding pad 909 (similar to the first bonding pad 507) and even a fifth optical component 911 (similar to the third optical component 511). However, any suitable device may also be used.

[0051] Figure 9 The placement of a first external connector 913 is also shown. The first external connector 913 can be formed to provide a conductive area for contact between the third bonding pad 909 and other external devices. The first external connector 913 can be a conductive bump (e.g., a C4 bump, ball grid array, microbump, etc.) or a conductive pillar utilizing materials such as solder and copper. In embodiments where the first external connector 913 is a contact bump, the first external connector 913 can comprise a material such as tin or other suitable materials such as silver, lead-free tin, or copper. In embodiments where the first external connector 913 is a solder bump, the first external connector 913 can be formed by first forming a tin layer using common methods such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once a tin layer has been formed structurally, reflow can be performed to shape the material into the desired bump shape.

[0052] Of course, while the use of the first external connector 913 is one embodiment that can be used to provide a connection for the first optical package 900, this is intended to be illustrative and not to limit the embodiments. Instead, any suitable method of physically, electrically, and in some cases optically connecting the first optical package 900, such as dielectric-dielectric and metal-metal bonding, may be employed. Any suitable method of bonding the first optical package 900 may be used.

[0053] Figures 10A-10D Different views of the placement of the fiber optic array unit 1001 are shown to transmit optical signal 1003 to and receive optical signal 1003 from the first optical component 900. First look... Figure 10A The illustration shows a very simplified version of a fiber optic array unit 1001 placed above a support substrate 701. In this embodiment, the fiber optic array unit 1001 is made of a material such as glass, which receives optical fibers 1005, arranges the optical fibers 1005 with fiber sheaths, and guides optical signals 1003 from the optical fibers 1005 to grating couplers, for example, within a first optical assembly 203, a second optical assembly 503, or a third optical assembly 511. The fiber optic array unit 1001 also receives optical signals 1003 from the grating couplers and guides the optical signals 1003 to the optical fibers 1005, which carry the optical signals 1003 away from the device.

[0054] Next, let's look at... Figure 10B The figure shows an isometric view of the fiber optic array unit 1001 placed and positioned above a support substrate 701 (other structures of the first optical package 900 have been removed from the figure for clarity). As can be seen in the embodiment, the first coupling lens 703 may be formed in the shape of a single trench to receive and guide multiple optical signals 1003 (not shown in the figure) between the fiber optic array unit 1001 and the first optical package 900. Figure 10B (Shown separately in the text).

[0055] Figure 10C A top view of a portion of a support substrate 701 is shown, which includes a first coupling lens 703 and a first opening 707. In an embodiment, there are multiple first coupling lenses 703, and the first opening 707 is formed as a single trench. The first opening 707 may be spaced from the first coupling lens 703 by a first distance D1, the first distance D1 being approximately 1 mm. Furthermore, the first opening may be spaced from the edge of the first die by a second distance D2, the second distance D2 being approximately 2 mm, and may be spaced from the edge of the second die by a third distance D3, the third distance D3 being approximately 0.9 mm. However, any suitable distance may also be used.

[0056] Furthermore, in this view, the first coupling lens 703 can be considered as a series of individual lenses, such as twenty-two lenses arranged in a straight line, but any suitable number may also be used. According to some embodiments, the series of individual lenses may be formed with each lens having a diameter Dia of approximately 100 μm and a first spacing P1 of approximately 127 μm, but in other embodiments, the individual lenses may each have different dimensions. However, any suitable size may also be used.

[0057] Figure 10D A cross-sectional view showing the initial placement of the fiber array unit 1001 above the support substrate 701 is shown (other structures have been removed from the figure for clarity), with additional details added. Figure 10D As shown, the fiber array unit 1001 may have a fiber array width W FA However, any suitable size may also be used.

[0058] Specifically, at this stage, the first protrusion 1009 and the first opening 707 are used to provide initial passive alignment. Specifically, during placement of the fiber array unit 1001, the first protrusion 1009 located on the bottom of the fiber array unit 1001 can be inserted into the first opening 707 to quickly align the fiber array unit 1001 with the remainder of the first optical package 900 and subsequently constrain the movement of the fiber array unit 1001. In embodiments, the first protrusion 1009 may be integrally formed with the fiber array unit 1001 or a separate structure attached to the bottom of the fiber array unit 1001.

[0059] Figure 10E It shows Figure 10D A close-up view within the dashed box marked 1011 shows in more detail the first protrusion 1009 located within the first opening 707. As shown in this cross-sectional view, the first opening 707 may be formed with a first width W1, while the first protrusion 1009 may be formed with a second width W2, wherein the first width W1 is greater than the second width W2. Furthermore, to allow for some movement for more active alignment while constraining the movement of the fiber array unit 1001, the difference between the first width W1 and the second width W2 may be approximately 1.2 times the beam spot diameter of the optical signal 1003 (determined by the processing limitations of the fiber array unit 1001 material—e.g., glass). However, any suitable size may also be used.

[0060] Once the initial passive alignment of the fiber array unit 1001 has been performed, active alignment can be performed to find optimized insertion loss. Specifically, the fiber array unit 1001 can be aligned by moving the fiber array unit 1001 (while being confined by the first protrusion 1009 within the first opening 707) while simultaneously measuring the insertion loss of the optical signal 1003 until the insertion loss is minimized. However, any suitable method for actively aligning the fiber array unit 1001 can also be used.

[0061] Furthermore, by providing an initial passive alignment and then limiting the movement of the fiber array unit 1001 to a limited permissible range of movement between the first protrusion 1009 and the first opening 707, the initial coarse portion of active alignment can be skipped to facilitate subsequent finer alignment. In this way, the amount of time required for active alignment of the fiber array unit 1001 can be reduced, thereby increasing the unit throughput per hour (UPH) of the mating between the fiber array unit 1001 and the first optical package 900.

[0062] Now refer to Figure 10F Once the fiber array unit 1001 has been placed, a first adhesive 1013 is placed between the fiber array unit 1001 and the support substrate 701 to secure the fiber array unit 1001 to the first optical package 900. According to some embodiments, the first adhesive 1013 may be an optical adhesive comprising a polymeric material (such as an epoxy acrylate oligomer) having a refractive index between about 1 and about 3. However, any suitable material or other attachment method may also be used.

[0063] During placement, the first adhesive 1013 can be placed between the fiber array unit 1001 and the support substrate 701 using, for example, an injection process. During placement, the first adhesive 1013 may be squeezed and displaced from its initial position. However, since the first protrusion 1009 and the first opening 707 are located between the initial position of the first adhesive 1013 and the first coupling lens 703, these structures act as barriers preventing the first adhesive 1013 from moving in that direction, thus helping to prevent interference and contamination of the first adhesive 1013. Therefore, although not in Figure 10F The document clearly shows that the first adhesive 1013 can be in physical contact with the first protrusion 1009 and can be located within the first opening 707.

[0064] Once the first adhesive 1013 and the fiber array unit 1001 have been placed, the first adhesive 1013 can be pre-cured to harden it. In this embodiment, the first adhesive 1013 can be pre-cured using UV curing. However, any suitable pre-curing process may also be used.

[0065] Once the first adhesive 1013 has been pre-cured, it can be cured to further harden it and provide a stronger structure. In one embodiment, the first adhesive 1013 can be cured using a baking process. However, any suitable curing process may also be used.

[0066] In an embodiment, after the first adhesive 1013 has cured, the first adhesive 1013 may have an adhesive width W. A Adhesive width W A Smaller than the fiber array width W FA For example, the adhesive width W A It can be between the fiber array width W FA The value is between approximately 0.75 and approximately 0.85. However, any applicable size may also be used.

[0067] Figure 11 Another embodiment is shown, which provides passive alignment for placing fiber array unit 1001, but employs a second protrusion 1101 located on support substrate 701 and a second opening 1103 located within fiber array unit 1001. In this embodiment, the second protrusion 1101 may resemble the first protrusion 1009 (but located and / or formed on support substrate 701), and the second opening 1103 may resemble the first opening 707 (but located and / or formed within fiber array unit 1001). However, any suitable size may also be used.

[0068] Figure 12 Another embodiment is shown in which the first opening 707 is not formed as a single groove, but rather as multiple grooves, such as a first groove 1201, a second groove 1203, and a third groove 1205 (although any suitable number of grooves may be used). In this embodiment, the first opening 707 may be combined as described above. Figure 10C The first distance D1, the second distance D2, and the third distance D3 are spaced apart as described above. However, any suitable number of grooves and any suitable distance can also be used.

[0069] Figure 13 Another embodiment of the first opening 707 is shown, wherein the first opening 707 is formed as a series of circular openings 1301 rather than one or more grooves. In this embodiment, the first opening 707 is formed as a series of circular openings 1301 arranged in a straight line, for example, thirteen openings. However, any suitable number of openings may also be used.

[0070] Observing each circular opening 1301, each circular opening 1301 may independently have a second diameter D2 of approximately 300 μm and a first depth between approximately 100 μm and approximately 150 μm. Furthermore, the circular openings 1301 may have a second pitch P2 of approximately 350 μm and may be spaced apart from each other by a first spacing S1 less than approximately 20% of the first diameter D1. However, any suitable size may also be used.

[0071] By utilizing the first protrusion 1009 and the first opening 707 to provide initial passive alignment during the placement of the fiber array unit 1001, the time required for subsequent active alignment can be reduced. This increases the hourly throughput of active alignment. Furthermore, the use of the first protrusion 1009 and the first opening 707 provides a physical barrier against undesirable movement of the first adhesive 1013, preventing it from interfering with the first coupling lens 703. This results in a more efficient process overall.

[0072] In one embodiment, a method of manufacturing an optical device includes: attaching a semiconductor die to an optical interposer, the optical interposer including at least one waveguide; and attaching a support substrate over the semiconductor die, wherein, after attachment, the support substrate includes alignment openings. In another embodiment, the method further includes attaching fiber array units to the support substrate, wherein attachment includes: performing passive alignment; and performing active alignment after performing passive alignment. In another embodiment, performing passive alignment includes placing a first protrusion of the fiber array unit into the alignment opening. In another embodiment, the alignment opening is a single trench. In another embodiment, the alignment opening is one of a series of trenches. In another embodiment, the alignment opening is a series of circular openings. In yet another embodiment, the method further includes applying an adhesive between the fiber array unit and the support substrate.

[0073] In another embodiment, a method of manufacturing an optical device includes: receiving a first optical package; inserting a first protrusion into an opening to align a fiber array unit with the first optical package; and, after insertion, actively aligning the fiber array unit with the first optical package. In this embodiment, the first protrusion is part of the fiber array unit. In this embodiment, the first protrusion is part of the first optical package. In this embodiment, the opening is a groove. In this embodiment, the opening is a plurality of grooves. In this embodiment, the plurality of grooves are arranged in a straight line relative to each other. In this embodiment, the opening includes a plurality of circular openings.

[0074] In another embodiment, the optical device includes: a first optical package; a fiber optic array unit connected to the first optical package via a protrusion located within a first opening; and an adhesive located between the first optical package and the fiber optic array unit. In this embodiment, the protrusion is part of the fiber optic array unit. In this embodiment, the protrusion is part of the first optical package. In this embodiment, the first opening is a single trench. In this embodiment, the first opening is a series of trenches. In this embodiment, the first opening includes a series of circular openings.

[0075] Some embodiments of this application provide a method for manufacturing an optical device, the method comprising: attaching a semiconductor chip to an optical interposer, the optical interposer including at least one waveguide; and attaching a support substrate over the semiconductor chip, wherein, after attachment, the support substrate includes alignment openings.

[0076] In some embodiments, the method further includes attaching fiber array units to the support substrate, wherein the attachment includes: performing passive alignment; and performing active alignment after performing the passive alignment.

[0077] In some embodiments, performing passive alignment includes placing a first protrusion of the fiber array unit into the alignment opening.

[0078] In some embodiments, the alignment opening is a single groove.

[0079] In some embodiments, the alignment opening is one of a series of grooves.

[0080] In some embodiments, the alignment opening is a series of circular openings.

[0081] In some embodiments, the method further includes applying an adhesive between the fiber array unit and the support substrate.

[0082] Other embodiments of this application provide a method for manufacturing an optical device, the method comprising: receiving a first optical package; inserting a first protrusion into an opening to align a fiber array unit with the first optical package; and, after the insertion, actively aligning the fiber array unit with the first optical package.

[0083] In some embodiments, the first protrusion is part of the fiber array unit.

[0084] In some embodiments, the first protrusion is part of the first optical package.

[0085] In some embodiments, the opening is a groove.

[0086] In some embodiments, the opening is a plurality of grooves.

[0087] In some embodiments, the plurality of trenches are arranged in a straight line relative to each other.

[0088] In some embodiments, the opening includes a plurality of circular openings.

[0089] Further embodiments of this application provide an optical device including: a first optical package; a fiber array unit connected to the first optical package via a protrusion located in a first opening; and an adhesive located between the first optical package and the fiber array unit.

[0090] In some embodiments, the protrusion is part of the fiber array unit.

[0091] In some embodiments, the protrusion is part of the first optical package.

[0092] In some embodiments, the first opening is a single groove.

[0093] In some embodiments, the first opening is a series of grooves.

[0094] In some embodiments, the first opening includes a series of circular openings.

[0095] The foregoing outlines features of several embodiments to enable those skilled in the art to better understand various aspects of the invention. Those skilled in the art should understand that they can readily use this invention as a basis to design or modify other processes and structures for performing the same purposes and / or achieving the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the invention, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of the invention.

Claims

1. A method of manufacturing an optical device, the method comprising: attaching a semiconductor chip to an optical interposer, the optical interposer comprising at least one waveguide; and attaching a support substrate over the semiconductor chip, wherein after attaching the support substrate, the support substrate comprises an alignment opening.

2. The method of claim 1, further comprising attaching a fiber array unit to the support substrate, wherein the attaching comprises: performing passive alignment; and after performing the passive alignment, performing active alignment.

3. The method of claim 2, wherein, The performing passive alignment comprises placing a first protrusion of the fiber array unit into the alignment opening.

4. The method of claim 3, wherein, The alignment opening is a single trench.

5. The method of claim 3, wherein, The alignment opening is one trench of a series of trenches.

6. The method of claim 3, wherein the alignment opening is a series of circular openings.

7. The method of claim 3, further comprising applying adhesive between the fiber array unit and the support substrate.

8. A method of manufacturing an optical device, the method comprising: receiving a first optical package; inserting a first protrusion into an opening to align a fiber array unit with the first optical package; and after the inserting, actively aligning the fiber array unit with the first optical package.

9. The method of claim 8, wherein, The first protrusion is part of the fiber array unit.

10. An optical device, comprising: a first optical package; a fiber array unit connected to the first optical package with a protrusion located within a first opening; and adhesive between the first optical package and the fiber array unit.

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