Full-process simulation method and system based on hall thruster and electronic equipment

Abstract

The application provides a full-process simulation method and system based on a Hall thruster and electronic equipment, and relates to the field of Hall thruster simulation. The method realizes the full-process collaborative simulation of sputtering, deposition, peeling and discharge disturbance by constructing a two-dimensional full-particle numerical simulation model, a sputtering deposition dynamic competition mechanism model, a channel wall surface deposition layer cracking, warping and peeling determination threshold model and a discharge disturbance induction and evolution simulation model. The cross-scale particle micro-kinetics simulation method, the peeling macro-motion simulation method and the discharge-induced simulation method are included in the same simulation model, so that the complex evolution mechanism inside the thruster can be fully reflected. The application can accurately and efficiently simulate the coupling behavior of plasma dynamics, wall evolution and discharge disturbance in self-consistent mode, support the performance optimization, life prediction and stability regulation of the Hall thruster.

Description

Technical Field

[0001] This application relates to the field of Hall thruster simulation technology, and in particular to a full-process simulation method, system and electronic equipment based on Hall thrusters. Background Technology

[0002] Currently, existing Hall thruster simulation methods mainly include Hall thruster lifetime and wall erosion simulation methods and Hall thruster particle / fluid simulation methods. The Hall thruster lifetime and wall erosion simulation method typically uses particle simulation or particle-fluid hybrid models to statistically analyze the energy distribution and incident angle of high-energy ions reaching the wall. These plasma parameters are used as input to calculate the local erosion rate, periodically updating the channel wall geometry based on the erosion rate. This method is computationally efficient but cannot simulate transient changes during the process. The Hall thruster particle / fluid simulation method targets transient phenomena in the plasma, such as breathing oscillations and circumferential oscillations. By capturing the trajectories and collision processes of electrons, ions, and neutral particles, it simulates the induction and evolution of discharge oscillations, providing the spatiotemporal distribution of plasma parameters. However, this type of method primarily focuses on plasma dynamics and does not integrate complex wall material evolution models. Therefore, the accuracy of existing full-process simulations of Hall thrusters is relatively low. Summary of the Invention

[0003] The purpose of this invention is to provide a full-process simulation method, system, and electronic equipment based on Hall thrusters, so as to solve the technical problem of low accuracy in existing full-process simulations of Hall thrusters.

[0004] Firstly, this application provides a full-process simulation method based on a Hall thruster, the method comprising:

[0005] Obtain the target operating parameters of the Hall thruster;

[0006] The target operating condition parameters are input into a preset Hall thruster full-process simulation model. The Hall thruster full-process simulation model simulates the time series data of the operating parameters of the Hall thruster under the target operating condition parameters and the spatiotemporal distribution data of plasma in the channel of the Hall thruster. The Hall thruster full-process simulation model is obtained by combining multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging cracking, warping and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model of discharge disturbance induction and evolution of the Hall thruster.

[0007] By analyzing the time series data of the operating parameters and the spatiotemporal distribution data, characteristic parameters of the entire process of sputtering, deposition, stripping, and discharge disturbance corresponding to the Hall thruster are obtained.

[0008] In one possible implementation, the target operating parameters include the channel configuration, channel size, and wall material type of the Hall thruster, as well as at least one of the applied electric field parameters, magnetic field parameters, cathode discharge current, and the type and flow rate of the neutral gas input to the Hall thruster; the operating parameter time series data includes discharge current time series data, particle sputtering and deposition time series data, and physical field time series data; the spatiotemporal distribution data includes at least one of particle density spatiotemporal distribution data, electron temperature axial spatiotemporal distribution data, and ion temperature axial spatiotemporal distribution data.

[0009] Analyzing the time series data of the operating parameters and the spatiotemporal distribution data yields characteristic parameters of the discharge disturbance corresponding to the Hall thruster, including:

[0010] The discharge current time series data is analyzed to obtain a first operating characteristic parameter; wherein, the first operating characteristic parameter includes the amplitude and duration of the discharge disturbance current;

[0011] The particle sputtering and deposition time series data are analyzed to obtain the second working characteristic parameters; wherein, the second working characteristic parameters include the channel wall morphology evolution and erosion / deposition rate;

[0012] The time series data of the physical field are analyzed to obtain the changing trend of the physical field during the discharge disturbance;

[0013] The spatiotemporal distribution data is analyzed to obtain a third working characteristic parameter; wherein, the third working characteristic parameter includes the variation trend of particle density distribution during discharge disturbance, the variation trend of wall sputtering particle properties during discharge disturbance, and the variation trend of wall deposited particle properties during discharge disturbance, wherein the particle properties include ejection / injection position and velocity;

[0014] The first operating characteristic parameter, the second operating characteristic parameter, the changing trend of the physical field during the discharge disturbance, and the third operating characteristic parameter are determined as the discharge disturbance characteristic parameters.

[0015] In one possible implementation, the method further includes: quantitatively describing the plasma sputtering rate of the wall material in the channel of the Hall thruster by means of the distribution characteristics of the sputtering yield, wherein the sputtering yield is expressed by the following formula:

[0016] ;

[0017] in,Y For the sputtering yield, A , B For the fitting parameters, The sputtering energy threshold, The energy of the incident particle. , , The angle of the incident particle. Maximum sputtering angle; f Represents the physical properties of sputtered deposits; e is the natural constant, representing the base of the natural logarithm function.

[0018] In one possible implementation, the protrusions or depressions caused by wall sputtering deposition in the Hall thruster sputtering deposition dynamic competition mechanism model are regarded as independent wavelet sources, and the diffusion process of the deposition layer morphology over time and the smoothing diffusion process are expressed by the following formula: ;

[0019] in, It is a function of the sedimentary layer height. The diffusion coefficient is... and These are deposition rate and sputtering rate, respectively. This indicates the diffusion process.

[0020] In one possible implementation, the method includes: a thermal stress calculation process, a surface adhesion assessment process, a particle bombardment force assessment process, and a process for determining the cracking, warping, and peeling of the deposited film.

[0021] In one possible implementation, the thermal stress calculation process includes:

[0022] Obtain the discharge perturbation characteristic parameters and the material properties of the sputtered deposited film;

[0023] The material properties of the sputtered deposited film are used as input based on the third working characteristic parameter to calculate the heat flux distribution on the thruster wall. The temperature field distribution of the Hall thruster and the thermal stress distribution of the deposited film on the surface of the thruster components are obtained by solving the transient heat conduction control equation using the following formula:

[0024] , , ;

[0025] in, This represents the amount of kinetic energy exchanged between ions. This represents the amount of energy exchanged between ions. Boltzmann's constant, The ion temperature. The potential energy of the wall sheath layer, This refers to the ionization energy released when xenon ions collide with and are neutralized by the wall surface. For material density, For specific heat capacity, Thermal conductivity, For temperature; As an internal heat source, it can take three forms: the heating effect of plasma within the acceleration channel on the wall surface. q Xe+, in Joule heating generated by electromagnets, and thermal radiation from space; f Represents the physical properties of sputtered deposits. Represents the physical properties of the channel surface material; For Young's modulus, Poisson's ratio, For the thickness of the sputtered deposit, For the surface material thickness involved in thermal stress calculation, The coefficient of thermal expansion is This represents the coefficient of thermal expansion of the material on the channel surface. Indicates the coefficient of thermal expansion of sputtered deposits; For thermal stress, T 0, T t These are the initial temperature and the current temperature, respectively. e is the natural constant, representing the base of the natural logarithm function; As an intermediate variable, This represents the Young's modulus of the sputtered sediment. This indicates the Young's modulus of the material on the channel surface;

[0026] The surface adhesion assessment process includes:

[0027] The interatomic stress tensor was calculated using molecular dynamics, and the surface adhesion was determined based on the combined force of van der Waals forces and chemical bonds between the deposited film and the wall surface; the interatomic stress tensor... This can be expressed by the following formula:

[0028] ;

[0029] in, For the first The volume of an atom For the first The mass of an atom , The first Atoms in and velocity in direction, For the first The atom and the first The pairwise distance between atoms Quantity, For the first The atom and the first Interatomic forces Quantity;

[0030] The particle bombardment force assessment process includes:

[0031] Obtain the spatial density distribution, velocity distribution, and incident angle of the particles;

[0032] Based on the spatial density distribution, the velocity distribution, and the incident angle, the following formula is used to calculate, using the law of conservation of momentum, the distribution characteristics of the plasma bombardment force on the surface film layer of each component of the Hall thruster are obtained. : ;in, m For particle mass, n The number of particles per unit volume. v For particle bombardment velocity, The angle between the particle bombardment velocity and the direction of the cantilever beam. A The unit surface area of ​​the sedimentary layer;

[0033] The process for determining cracking, warping, and peeling of the deposited film includes:

[0034] The critical value of strain energy release rate was calculated using molecular dynamics methods. A cohesive model was established to analyze the relationship between normal and tangential stress and strain. Criteria for film cracking, warping, and peeling were established using the finite element method. Film cracking was determined using the following formula: ;

[0035] The warpage of the membrane layer is determined by the following formula: ;

[0036] The criterion for membrane peeling is as follows: ;

[0037] Where I represents the normal direction and II represents the tangential direction. and This represents the strain energy release rate corresponding to the normal and tangential directions. This indicates adjustable interaction parameters. This indicates the total fracture toughness of the material. This represents the shear displacement along the wall direction. Represents residual stress. Indicates the initial strain energy release rate of the material. This indicates the maximum strain energy release rate that the material can withstand. G IC and GIIC represents the maximum strain energy release rate that can be withstood in the normal and tangential directions.

[0038] In one possible implementation, the process of solving the simulation model using the Hall thruster discharge disturbance induced and evolved simulation model to obtain the simulation results includes:

[0039] The electric force, magnetic force, high-speed particle bombardment force, and pressure gradient force are calculated using the equations governing the motion of the exfoliated material, thereby enabling simultaneous calculation of the plasma discharge and the motion of the exfoliated material. The equations governing the motion of the exfoliated material are as follows: ; For the force on the exfoliated material, The amount of charge carried by the exfoliated material. The electric field strength at the location of the flaking material. The velocity of the detached material. The magnetic field strength at the location of the detached material. For the volume of the exfoliated material, This represents the pressure at the location of the detached material. The number of ion particles in contact with the exfoliated material. To contact the surface of the peeling material, For ion mass, For collision frequency, This refers to the velocity of ions.

[0040] A plasma dynamic filling model incorporating the movement of exfoliated material is established. During the establishment of the plasma dynamic filling model, in the space newly occupied by the exfoliated material in front of the movement of the exfoliated material and at the next time step, the plasma absorption and reflection or deposition process is calculated based on the interaction between the plasma and the exfoliated material.

[0041] In the space behind the moving debris and in the next time step, which is vacated by the forward movement of the debris, plasma is filled using an electric field to obtain the microscopic manifestation of the disturbance process induced by the debris in the channel. The microscopic manifestation includes particle density distribution and physical field change trend.

[0042] Secondly, this application provides a full-process simulation system based on a Hall thruster, including:

[0043] The acquisition module is used to acquire the target operating parameters of the Hall thruster;

[0044] The simulation module is used to input the target operating condition parameters into a preset Hall thruster full-process simulation model. The Hall thruster full-process simulation model simulates the time series data of the operating parameters of the Hall thruster under the target operating condition parameters and the spatiotemporal distribution data of plasma in the channel of the Hall thruster. The Hall thruster full-process simulation model is obtained by combining multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging cracking, warping and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model of discharge disturbance induction and evolution of the Hall thruster.

[0045] The analysis module is used to analyze the time series data of the operating parameters and the spatiotemporal distribution data to obtain the characteristic parameters of the entire process of sputtering, deposition, stripping and discharge disturbance of the Hall thruster.

[0046] Thirdly, this application also provides an electronic device, including a memory and a processor, wherein the memory stores a computer program that can run on the processor, and the processor executes the computer program to implement the method described in the first aspect above.

[0047] Fourthly, this application also provides a computer-readable storage medium storing computer-executable instructions that, when invoked and executed by a processor, cause the processor to perform the method described in the first aspect above.

[0048] This application brings the following beneficial effects:

[0049] This application provides a full-process simulation method, system, and electronic device based on a Hall thruster, capable of acquiring target operating parameters of the Hall thruster; inputting the target operating parameters into a preset Hall thruster full-process simulation model, and simulating the time series data of the Hall thruster's operating parameters and the spatiotemporal distribution data of plasma in the Hall thruster's channel under the target operating parameters through the Hall thruster full-process simulation model; wherein, the Hall thruster full-process simulation model is obtained based on a combination of multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model for sputtering and deposition of the Hall thruster, a threshold model for judging the cracking, warping, and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model for the induction and evolution of discharge disturbance of the Hall thruster; analyzing the time series data of the operating parameters and the spatiotemporal distribution data to obtain the corresponding sputtering, deposition, peeling, and discharge of the Hall thruster. The characteristic parameters of the entire process of disturbance are obtained by inputting the target operating parameters of the Hall thruster into a Hall thruster full-process simulation model, which is based on a combination of multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering and deposition of the Hall thruster, a threshold model for judging cracking, warping and spalling of the deposition layer on the channel wall of the Hall thruster, and a simulation model of the induction and evolution of discharge disturbance of the Hall thruster. The Hall thruster full-process simulation model is used to simulate the time series data of the working parameters of the Hall thruster under the target operating parameters and the spatiotemporal distribution data of the plasma in the channel of the Hall thruster. Then, by analyzing the time series data of the working parameters and the spatiotemporal distribution data, the characteristic parameters of the entire process of sputtering, deposition, spalling and discharge disturbance of the Hall thruster are obtained. This can accurately simulate the induction and evolution of the spalling material on the inner wall of the discharge channel of the Hall thruster, and solve the technical problem of low accuracy of the existing full-process simulation of the Hall thruster.

[0050] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0051] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0052] Figure 1 A flowchart illustrating the full-process simulation method based on a Hall thruster provided in this application embodiment;

[0053] Figure 2 Another schematic diagram of the full-process simulation method based on Hall thruster provided in the embodiments of this application;

[0054] Figure 3 A functional block diagram of a Hall thruster sputtering-deposition-stripping-discharge disturbance full-process simulation system provided in this application embodiment;

[0055] Figure 4 A schematic diagram of a full-process simulation system based on a Hall thruster provided in this application embodiment;

[0056] Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of this application is shown. Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0058] The terms "comprising" and "having," and any variations thereof, used in the embodiments of this application, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the steps or units listed, but may optionally include other steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0059] Currently, Hall thruster lifetime and wall erosion simulation methods cannot simulate transient changes during the process. These morphological changes are fed back into the plasma simulation at the next time step, thus achieving coupled iteration of the plasma field and wall morphology. However, these models mainly focus on the impact of erosion on lifetime, neglecting physical processes such as deposit accumulation on the wall, internal stress of the deposit layer, and eventual cracking and spalling. They lack simulation of spalling and subsequent discharge disturbances. Furthermore, Hall thruster particle / fluid simulation methods do not integrate complex wall material evolution models, such as stress determination for deposit layer cracking and spalling. In other words, they are usually only used as inputs to calculate discharge oscillations, without considering the feedback of long-term wall morphology changes on the oscillations, let alone the instantaneous and severe disturbance effect of spalling events on the oscillations. Therefore, the accuracy of existing full-process simulations of Hall thrusters is relatively low.

[0060] Based on this, the full-process simulation method, system, and electronic equipment for Hall thrusters provided in this application can solve the technical problem of low accuracy in existing full-process simulations of Hall thrusters.

[0061] The full-process simulation method for the Hall thruster provided in this application can be applied to servers or terminals with strong computing capabilities. The server can be a physical server, a server cluster composed of multiple physical servers, or a distributed system. It can also be a cloud server providing basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communication, middleware services, domain name services, security services, content delivery networks (CDNs), and big data and artificial intelligence platforms. The terminal can be user equipment (UE) such as mobile phones, smartphones, laptops, digital radio receivers, personal digital assistants (PDAs), and tablet computers (PADs), handheld devices, in-vehicle devices, wearable devices, computing devices, or other processing devices connected to a wireless modem, mobile stations (MS), and mobile terminals. The terminal and server can be directly or indirectly connected via wired or wireless communication methods, which is not limited herein.

[0062] The preferred embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit this application. Furthermore, the embodiments and features in the embodiments of this application can be combined with each other without conflict.

[0063] Figure 1 This is a flowchart illustrating a full-process simulation method based on a Hall thruster, provided as an embodiment of this application. Figure 1 As shown, the method includes:

[0064] Step S10: Obtain the target operating parameters of the Hall thruster.

[0065] Among them, the two-dimensional full-particle numerical simulation model of the Hall thruster is used to simulate the dynamic behavior of ions and electrons in plasma by using the hybrid particle simulation method, combining particle tracking and field equation solving.

[0066] As one possible implementation, the target operating parameters include: the channel configuration, channel size, and wall material type of the Hall thruster, as well as the applied electric field parameters, magnetic field parameters, and cathode discharge current of the Hall thruster, and the type and flow rate of the neutral gas input into the Hall thruster.

[0067] In the embodiments of this application, such as Figure 2 As shown, the method further includes: step S110, constructing a two-dimensional full-particle numerical simulation model of the Hall thruster; wherein, the simulation model includes: a particle motion model, a charge deposition model, an electromagnetic field solution model, and a collision solution model; using the target operating condition parameters as model input; step S120, constructing a dynamic competition mechanism model for Hall thruster sputtering deposition, using the particle boundary processing data output by the two-dimensional full-particle numerical simulation model of the Hall thruster, including the velocity, position, and energy of the particles when they reach the wall, as input for the dynamic competition mechanism model of Hall thruster sputtering deposition; step S130, constructing a threshold model for judging the cracking, warping, and peeling of the deposition layer on the wall of the Hall thruster channel, based on the Hall thruster sputtering deposition... The sputtering deposition data output by the dynamic competition mechanism model, including sputtering rate, deposition rate, and net erosion rate, is used as part of the input for the Hall thruster channel wall deposition layer cracking, warping, and spalling determination threshold model; Step S140: Construct a Hall thruster discharge disturbance induction and evolution simulation model, based on the spalling disturbance data output by the Hall thruster channel wall deposition layer cracking, warping, and spalling determination threshold model, including spalling velocity, near-spalling physical field change trend, and near-spalling electron and ion particle change trend, as input for the Hall thruster discharge disturbance induction and evolution simulation model; Step S150: Repeat steps S120 to S140 until the preset simulation cutoff condition is reached.

[0068] Regarding step S110 above, which involves constructing a two-dimensional full-particle numerical simulation model of the Hall thruster, it should be noted that the Hall thruster plasma involves complex plasma reactions and wave-plasma interactions during its operation. Therefore, selecting a suitable simulation model is the theoretical basis for accurately describing the corresponding plasma process. Thus, at the beginning of the method implementation, a high-precision Hall thruster plasma numerical simulation model needs to be established to ensure the accuracy of the simulation results. The simulation model includes: a particle motion model, a charge deposition model, an electromagnetic field solution model, and a collision solution model. The boundary conditions of each simulation model need to be defined according to the specific Hall thruster system. For example, non-metallic materials such as ceramics are defined as dielectric boundaries, and the anode and thruster wall are defined as first-type boundary conditions with a fixed potential. This embodiment of the invention does not specifically limit the boundary conditions of the simulation model; users need to adapt the design according to the actual simulation system.

[0069] The basic idea behind plasma particle simulation is to simulate the entire discharge process in real time by tracking the motion and forces acting on charged particles. To reduce computational load, macroparticles are typically used to represent multiple real particles moving together. These particles share common coordinates and velocities, and their charge-to-mass ratio is equal to that of real particles. Particle simulation methods are based on first-principles equations and neglect fewer aspects of actual physical processes, thus providing the most realistic reflection of the interaction between charged particles and electromagnetic fields.

[0070] In the actual formation of discharge plasma, ionization collisions between high-energy electrons and neutral background gas need to be considered to maintain the development of the discharge plasma. Therefore, collision effects are introduced into the PIC simulation. A combined solution using the Particle Mesh Method (PIC) and Monte Carlo Collision Method (MCC) can leverage the advantages of the PIC method in handling collective interactions and the MCC method in handling particle collisions. In practice, ions move much slower than electrons; therefore, a time-step separation method is used in the simulation to handle these two types of particles.

[0071] (1) High-precision and high-efficiency particle motion model. During the simulation, at each time step, the velocity and position of each particle at the next moment need to be determined based on the forces acting on it. The motion of charged particles in an electromagnetic field can be described by Newton's equations of motion:

[0072] ;

[0073] Here, F is the resultant force of the electric and magnetic fields. e Let E be the elementary charge, B be the electric field vector, v be the particle velocity vector, and x be the particle displacement vector. During the simulation, the velocity and position of each particle need to be recorded, and calculations and data updates need to be performed at each time step. When the number of particles is large, the computer's storage space becomes very demanding. To minimize storage space while maintaining computational accuracy, the most commonly used method is the frog-jump scheme proposed by Birdsall. Using the frog-jump scheme, Newton's equations of motion can be discretized into the following finite difference equations:

[0074] ;

[0075] In the formula, m is the particle mass, v is the particle velocity, and F is the force acting on the particle. n Indicates the first n There are several time steps. In the frog-leap scheme, the discretized particle's velocity v and position x are at different time points. The time point for position calculation is... This is an integer multiple of the time step. The time point for velocity calculation is... , which is a half-integer multiple of the time step. The solution times for x and v are staggered. The two methods are solved alternately and cyclically, hence the name "frog leaping scheme".

[0076] (2) High-precision and high-efficiency charge deposition model. When using the particle algorithm to solve the electromagnetic field, it is necessary to distribute the charge of charged particles to the corresponding grid nodes. Then, the contribution of all charged particles is summed to obtain the charge density of the corresponding grid. The potential distribution of the computational domain is obtained by solving the equations. Finally, the electric field at the particle position is obtained by interpolation. One of the key steps is to distribute the charge of charged particles to the corresponding grid nodes. Currently, the particle cloud compartment method (CIC) is mostly used to distribute particle charge. The CIC method mainly uses the volume weighting method. The charge distribution weight of the particle at each node in this grid cell is:

[0077] ;

[0078] In the formula x , y , z for x , y , z Grid spacing in the direction, x q , y q , z q The coordinates of the deposited particles are given. i , j , k These are the grid coordinates corresponding to the deposited particles. i =1, 2, 3… N x , j =1, 2, 3… N y , k =1, 2, 3… N z .

[0079] (3) High-precision and high-efficiency electromagnetic field solution model. Electromagnetic field solution can be roughly divided into two parts: electric field solution and magnetic field solution. Both involve using the difference method of Maxwell's equations to obtain the spatial distribution of the electric and magnetic fields. Specifically, it can be divided into the following categories:

[0080] a. Electrostatic Model: In this model, particles are primarily affected by an electrostatic field, with no magnetic field or a negligible magnetic field. Therefore, Maxwell's equations degenerate into Poisson's equations.

[0081] b. Static magnetic model: In this model, the particle is acted upon by both an electric field and a magnetic field, but the induced magnetic field generated by the particle's motion is very small and can be ignored. In this case, the magnetic field can be regarded as a static magnetic field, and the electric field can be solved using the Poisson equation during the calculation.

[0082] c. Electromagnetic Model: In this model, the induced magnetic field generated by particle motion or changes in the electric field is sufficiently strong and cannot be ignored. Solving the complete Maxwell's equations is required. Solving this type of problem involves complex equations and strict time-step requirements, consuming a significant amount of time.

[0083] In electric thrusters, especially Hall thrusters, the applied magnetic field is much larger than the magnetic field generated by plasma coupling, so it can be considered a static magnetic model. The magnetic field distribution can be calculated using software and imported, remaining unchanged during the simulation. Therefore, the solution of the electromagnetic field currently mainly boils down to obtaining the electric potential and electric field distribution using the Poisson equation. After statistically obtaining the charge value at each grid node in the computational domain, the spatial electric potential distribution can be obtained through the Poisson equation:

[0084] ;

[0085] In the formula Represents electric potential, Represents the vacuum permittivity. Let represent the number densities of ions and electrons, respectively. Because the Poisson equation has too high a dimension to obtain an analytical solution directly, it needs to be discretized using the difference method to transform it into a system of linear equations. The seven-point central difference form of the three-dimensional Poisson equation is:

[0086] ;

[0087] After solving the discretized equations to obtain the spatial distribution of the electric potential, the spatial distribution of the electric field can be further obtained through differential potential. The formula for calculating the electric field strength is:

[0088] ;

[0089] (4) High-precision and high-efficiency collision solution model. In electric thrusters, there are various collisions between particles. Different types of collision processes exist between electrons and atoms, ions and atoms, electrons and ions, atoms and atoms, and ions and ions. Due to the small size of the electric thruster and the large mean free path of most collisions, the probability of these collisions occurring is relatively low. In electric thrusters, the dominant collision processes are elastic collisions, excitation collisions, and ionization collisions between electrons and atoms, as well as momentum exchange collisions and charge exchange collisions between ions and atoms. The commonly used method is the Monte Carlo Collision (MCC) method to handle collisions between particles. The basic process of the MCC method is as follows:

[0090] Assuming particles i With the background particles (usually atoms) that are collided with N For a given type of collision, the total collision cross section is:

[0091] ;

[0092] exist Within a time, particles i Collision frequency with background particles It can be represented as:

[0093] ;

[0094] The probability of a particle colliding with background particles. for:

[0095] ;

[0096] In the formula This represents the number density of background particles. Represents particles i speed, Represents particles i The sum of the collision cross sections of all involved collisions. Represents particles i The kinetic energy. This method requires recalculating the collision cross-section based on the energy of each particle i at each time step in the simulation process, and then deciding which type of collision to occur, leading to reduced computational efficiency. To solve this problem, the null collision method can be used, which improves the speed of handling the collision process. The idea behind the null collision method is as follows:

[0097] a. Obtain the maximum collision frequency of all particles within the computational domain:

[0098] ;

[0099] b. Calculate the probability that particle i will have an empty collision within this time step:

[0100] ;

[0101] c. Based on the total number of particles and the collision probability, the estimated maximum number of collisions can be obtained:

[0102] ;

[0103] d. Regarding the collision Each particle undergoes collision processing. A set of particles with a quantity of [number] is generated. N coll random numbers R (k ), corresponding to the first k For each particle undergoing a collision, the rules for determining the type of collision are as follows:

[0104] The first type of collision occurs;

[0105] A second type of collision occurs;

[0106] A no-collision occurs, meaning no collision is performed.

[0107] in For the first k The first particle j The frequency of collisions. Using the empty collision method to handle collisions only requires... By calculating collisions with individual particles, the number of particles involved in the collision calculation is greatly reduced, thus improving computational efficiency.

[0108] This step mainly completes the construction of a two-dimensional full-particle numerical simulation model of the Hall thruster plasma, which serves as the basic environment for subsequent collaborative simulation of the entire process of sputtering, deposition, stripping, and discharge disturbance.

[0109] For step S120 above, a dynamic competition mechanism model for sputtering deposition in a Hall thruster is constructed. This model uses particle boundary processing data output from the two-dimensional full-particle numerical simulation model of the Hall thruster, including the velocity, position, and energy of particles reaching the wall, as input to the dynamic competition mechanism model. It should be noted that during the operation of the Hall thruster, plasma bombardment of the wall surface triggers sputtering of wall material atoms, and the diffusion of these atoms within the channel induces wall deposition to form a thin film layer. These two opposing processes compete spatially and temporally, significantly influencing the evolution of the wall morphology and the overall performance of the thruster. Therefore, after establishing and running the two-dimensional full-particle numerical simulation model, a dynamic competition mechanism model for sputtering deposition needs to be constructed based on its output particle boundary processing data, including the velocity, position, and energy of ion particles reaching the wall.

[0110] In this embodiment, the sputtering rate of high-speed particles onto the wall material is quantitatively described by the sputtering yield distribution characteristics, and the diffusion and smoothing behavior of the deposition layer thickness over time is characterized by the deposition diffusion equation. In this process, protrusions or depressions on the wall surface are considered independent wavelet sources, and their diffusion effect is used to reflect the evolution characteristics of the deposition layer morphology over time. By dynamically solving for the sputtering rate and deposition rate, parameters such as the evolution trend of the wall morphology and the net erosion rate can be obtained.

[0111] The sputtering rate of high-speed plasma on wall materials is quantitatively described by the sputtering yield distribution characteristics. The sputtering yield is expressed as:

[0112] ;

[0113] in, Y For sputtering output, A , B For the fitting parameters, The sputtering energy threshold, The energy of the incident particle. , , The angle of the incident particle. This is the maximum splash angle.

[0114] In PIC-MCC / DSMC simulations, by statistically analyzing specific time steps... The particle information arriving at a specific grid on the wall within a given time interval (t) allows for the calculation of the BN sputtering yield and deposition flux at that location. The mass of BN sputtered from the wall per unit time is determined by the number of arriving ions and the sputtering yield function. The BN sputtering rate of a given grid is also considered. q sput The calculation formula is:

[0115] ;

[0116] in, N sput exist t The total number of sputtered particles generated within a time period, where N is the atomic density of the wall material. A grid This represents the area of ​​the wall grid.

[0117] The mass of BN redeposited onto the wall per unit time is determined by the number of neutral BN particles that arrive and are deemed to be attached, and the BN deposition rate. q dep The calculation formula is:

[0118] ;

[0119] in, N dep exist t The total number of BN particles that arrive at and deposit in the grid within a given time period.

[0120] The net erosion rate is given by the difference between sputtering and deposition fluxes, directly reflecting the net rate of change in wall quality:

[0121] ;

[0122] Using the above method, the number of microscopic particles counted in the simulation can be transformed into the macroscopic erosion rate, thereby obtaining the wall evolution law, which can be used to study the impact of wall erosion, quantitatively assess the distribution of sedimentary layers, and obtain the most probable sedimentary region.

[0123] The Hall thruster sputtering deposition competition model treats protrusions or depressions caused by wall sputtering deposition as independent wavelet sources, and uses their diffusion process to describe the diffusion and smoothing of the deposition layer morphology over time.

[0124] ;

[0125] in It is a function of the sedimentary layer height. The diffusion coefficient is... and These are the deposition rate and the sputtering rate, respectively.

[0126] This step mainly completes the construction of the dynamic competition mechanism model for Hall thruster sputtering deposition. The particle boundary processing data output from the two-dimensional full-particle numerical simulation model of Hall thruster, including the velocity, position, and energy of the particles when they reach the wall, is used as the input for the dynamic competition mechanism model of Hall thruster sputtering deposition.

[0127] For step S130 above, a threshold model for judging cracking, warping, and spalling of the deposited layer on the wall of the Hall thruster channel is constructed. Sputtering and deposition data output from the Hall thruster sputtering deposition dynamic competition mechanism model, including sputtering rate, deposition rate, and net erosion rate, are used as partial inputs to this threshold model. It should be noted that the deposited layer formed under the long-term competition between sputtering and deposition will undergo a complex stress evolution process. When the accumulated stress exceeds the material's critical bearing capacity, it will lead to cracking, warping, or even spalling of the film, significantly affecting the stability of the thruster channel and the discharge process. Therefore, after obtaining the data output from the sputtering deposition dynamic competition mechanism model, including sputtering rate, deposition rate, and net erosion rate, a threshold model for judging cracking, warping, and spalling of the deposited layer needs to be further constructed to quantitatively analyze the mechanical response characteristics of the film structure.

[0128] In this embodiment, firstly, based on the thermal stress calculation method, combined with the material parameters and third working characteristic parameters of the sputtered deposited film, the wall temperature field distribution and the thermal stress distribution of the deposited layer are solved, and the contribution of multi-source thermal effects such as plasma heating, Joule heating, and radiative heat to the internal stress of the film is analyzed. Secondly, through the surface adhesion assessment method, the interatomic forces are calculated using molecular dynamics to obtain the van der Waals forces and chemical bond forces between the deposited film and the wall, providing a basis for interface failure determination. Simultaneously, based on the particle bombardment force assessment method, combined with the particle spatial density, incident velocity, and angle, the momentum transfer and impact load characteristics of the plasma on the film are calculated.

[0129] By establishing a cohesive force model and solving it using the finite element method, criteria for determining film cracking, warping, and peeling were constructed. This model can provide the relationship between the critical value of strain energy release rate and the material fracture toughness parameter, thereby determining whether the deposited film has reached the failure threshold.

[0130] The method for determining the threshold of cracking, warping and peeling of the deposited layer on the channel wall of the Hall thruster was simulated and solved to obtain the simulation results. The methods used include: thermal stress calculation method, surface adhesion evaluation method, particle bombardment force evaluation method, and deposited film cracking, warping and peeling determination method.

[0131] Using the material properties of the sputtered deposited film as input, the heat flux distribution on the thruster wall is calculated:

[0132] ;

[0133] in, This represents the amount of kinetic energy exchanged between ions. This represents the amount of energy exchanged between ions. Boltzmann's constant, The ion temperature. The potential energy of the wall sheath layer, This refers to the ionization energy released when xenon ions collide with the wall and are neutralized.

[0134] Solve the transient heat conduction control equations to obtain the temperature field distribution of the Hall thruster:

[0135] ;

[0136] in, For material density, For specific heat capacity, Thermal conductivity, For temperature. The internal heat source has three main forms: first, the heating effect of plasma in the acceleration channel on the wall surface; second, the Joule heating generated by the electromagnet; and third, the thermal radiation from the space.

[0137] Using the same geometric model, mesh generation, and material properties as the temperature field analysis, the thermal stress distribution of the deposited film layer on the surface of each component of the thruster was calculated:

[0138] ;

[0139] Where the subscript f represents the physical properties of the sputtered deposits, and the subscript is The physical properties of the channel surface material are represented by . For Young's modulus, Poisson's ratio, For the thickness of the sputtered deposit, For the surface material thickness involved in thermal stress calculation, is the coefficient of thermal expansion. For thermal stress, T0 and Tt are the starting temperature and current temperature of the coating, respectively.

[0140] Based on surface adhesion assessment methods, molecular dynamics is used to calculate the interatomic stress tensor, and the van der Waals forces and chemical bond forces between the deposited film and the wall are statistically obtained. The resultant force of these two forces is used to assess surface adhesion. Interatomic stress tensor:

[0141] ;

[0142] in, For the first The volume of an atom For the first The mass of an atom , The first Atoms in and velocity in direction, For the first The atom and the first The pairwise distance between atoms Quantity, For the first The atom and the first Interatomic forces Quantity.

[0143] Based on the particle bombardment force assessment method, the spatial density distribution, velocity distribution, and incident angle of the particles can be obtained. Using the law of conservation of momentum, the characteristics of the plasma bombardment force distribution on the surface film layer of each component of the Hall thruster can be calculated.

[0144] ;

[0145] in, m For particle mass, n The number of particles per unit volume.v For particle bombardment velocity, The angle between the particle bombardment velocity and the direction of the cantilever beam. A This represents the unit surface area of ​​the sedimentary layer.

[0146] Based on the method for judging the cracking, warping, and peeling of deposited films, the critical value of strain energy release rate is calculated according to the molecular dynamics method. An internal cohesive model is established to analyze the relationship between normal and tangential stress and strain. Using the finite element method, a criterion for judging the cracking / warping-peeling of deposited films is established, including:

[0147] Methods for determining film cracking:

[0148] ;

[0149] Methods for determining film warpage:

[0150] ;

[0151] Criteria for membrane peeling:

[0152] ;

[0153] Where I - normal direction, II - tangential direction, -Strain energy release rate, - Adjustable interaction parameters -Total fracture toughness of the material, -Shear displacement along the wall direction - Initial strain energy release rate of the material - The maximum strain energy release rate that the material can withstand.

[0154] For step S140 above, a simulation model for the induction and evolution of discharge disturbances in the Hall thruster is constructed. Based on the spalling disturbance data output from the threshold model for determining the cracking, warping, and spalling of the deposition layer on the Hall thruster channel wall, including the spalling velocity, the trend of changes in the physical field near the spalling, and the trends of changes in electron and ion particle distribution near the spalling, this data serves as input to the Hall thruster discharge disturbance induction and evolution simulation model. It should be noted that when the deposition layer cracks, warps, and eventually spalls off, the spalling enters the discharge channel region and interacts strongly with the original plasma environment, thereby inducing disturbances in the electric field, magnetic field, and particle distribution, altering the discharge characteristics and the spatiotemporal evolution of the plasma within the channel. Therefore, after obtaining the spalling disturbance data output from the threshold model for determining the cracking, warping, and spalling of the deposition layer, including the spalling velocity, the trend of changes in the physical field near the spalling, and the characteristics of changes in electron and ion particle distribution, a simulation model for the induction and evolution of discharge disturbances needs to be constructed to reveal the generation mechanism and evolution process of this disturbance.

[0155] In this embodiment, by introducing the equation of motion for the exfoliated material, factors such as the electric force, magnetic force, high-speed particle bombardment force, and pressure gradient force acting on the exfoliated material are incorporated into a unified calculation framework, enabling the simultaneous solution of the exfoliated material's trajectory and the plasma discharge process. Through this process, the dynamic behavior of the exfoliated material within the channel and its coupling effect with the surrounding plasma can be obtained. Simultaneously, a dynamic plasma filling model considering the influence of the exfoliated material's motion is established to simulate the absorption, reflection, and deposition processes of plasma in the newly occupied area in front of the exfoliated material. Furthermore, an electric field-driven refilling calculation is performed on the cavity region behind the exfoliated material created by its motion, thereby reproducing the spatial structure and temporal evolution characteristics of the disturbance propagation.

[0156] The above modeling method can comprehensively reveal the disturbance-induced mechanism of the spalling event on the discharge process and its impact on key parameters such as particle density distribution and physical field evolution trend. This provides important numerical support for a deeper understanding of the causes of discharge instability, optimization of Hall thruster discharge characteristics, and improvement of system operation stability.

[0157] By introducing the equation of motion for the exfoliated material, the electric force, magnetic force, high-speed particle bombardment force, and pressure gradient force are calculated to achieve synchronous calculation of plasma discharge and the movement process of the exfoliated material; the equation of motion for the exfoliated material is as follows:

[0158] ;

[0159] in, For the force on the exfoliated material, The amount of charge carried by the exfoliated material. The electric field strength at the location of the flaking material. The velocity of the detached material. The magnetic field strength at the location of the detached material. For the volume of the exfoliated material, This represents the pressure at the location of the detached material. The number of ion particles in contact with the exfoliated material. To contact the surface of the peeling material, For ion mass, For collision frequency, This represents the velocity of ions.

[0160] A plasma dynamic filling model considering the movement of the exfoliated material is established: in the space newly occupied by the exfoliated material in the next time step ahead of the exfoliated material, the interaction between plasma and the exfoliated material is considered, and the plasma absorption, reflection, or deposition process is calculated; in the space vacated by the exfoliated material in the next time step behind the exfoliated material, plasma filling is achieved by electric field driving; the microscopic manifestations of the disturbance process induced by the exfoliated material in the channel are obtained, including: particle density distribution and physical field change trend.

[0161] The above modeling method can comprehensively reveal the disturbance-induced mechanism of the spalling event on the discharge process and its impact on key parameters such as particle density distribution and physical field evolution trend. This provides important numerical support for a deeper understanding of the causes of discharge instability, optimization of Hall thruster discharge characteristics, and improvement of system operation stability.

[0162] In this embodiment, the constructed Hall thruster sputtering-deposition-stripping-discharge disturbance full-process simulation method enables self-consistent coupling calculations of particle-scale plasma dynamics, wall material evolution behavior, and macroscopic discharge disturbance processes within the same numerical framework. Furthermore, by combining a two-dimensional full-particle numerical simulation model, a sputtering-deposition dynamic competition mechanism model, a channel wall deposition layer cracking, warping, and stripping judgment threshold model, and a discharge disturbance induction and evolution simulation model, the method can dynamically analyze the plasma behavior inside the discharge channel throughout the entire process based on target operating parameters. It comprehensively reveals the complex evolution mechanism inside the Hall thruster from the particle scale, wall scale, to the system scale, achieving spatiotemporal analysis and parameter feature extraction of the entire sputtering, deposition, stripping, and discharge disturbance process. Moreover, the sputtering rate under high-speed plasma-wall interaction is quantitatively characterized by the sputtering yield distribution function, and the temporal evolution characteristics of the deposition layer morphology are described by combining the deposition-diffusion equation. After the deposition layer is formed, the stress distribution of the film is obtained by methods such as thermal stress calculation, surface adhesion assessment and particle bombardment force analysis. The cohesive force model and finite element criteria are used to establish the judgment criteria for film cracking, warping and peeling, so as to realize the dynamic prediction of film behavior.

[0163] Step S20: Input the target operating condition parameters into the preset Hall thruster full-process simulation model, and simulate the time series data of the operating parameters of the Hall thruster under the target operating condition parameters and the spatiotemporal distribution data of the plasma in the channel of the Hall thruster through the Hall thruster full-process simulation model.

[0164] Among them, the Hall thruster full-process simulation model is obtained by combining multiple physical process simulation models, including the above-mentioned Hall thruster two-dimensional full-particle numerical simulation model, the above-mentioned Hall thruster sputtering deposition dynamic competition mechanism model, the above-mentioned Hall thruster channel wall deposition layer cracking, warping and peeling judgment threshold model, and the above-mentioned Hall thruster discharge disturbance induced and evolved simulation model.

[0165] The aforementioned operating parameter time series data includes: discharge current time series data, particle sputtering and deposition time series data, and physical field time series data. The aforementioned plasma spatiotemporal distribution data includes: particle density spatiotemporal distribution data, electron temperature axial spatiotemporal distribution data, and ion temperature axial spatiotemporal distribution data.

[0166] As a possible implementation, for the above-mentioned Hall thruster sputtering deposition dynamic competition mechanism model, as an optional implementation, this method further includes: quantitatively describing the sputtering rate of the plasma on the wall material in the Hall thruster channel through the distribution characteristics of sputtering yield, wherein the sputtering yield is expressed by the following formula:

[0167] ;in, Y For sputtering output, A , B For the fitting parameters, The sputtering energy threshold, The energy of the incident particle. , , The angle of the incident particle. Maximum sputtering angle; f Represents the physical properties of sputtered deposits; e is a natural constant, representing the base of the natural logarithm function. The calculation method described above allows for more accurate data structures.

[0168] In one possible implementation, the protrusions or depressions caused by wall sputtering deposition in the Hall thruster sputtering deposition dynamic competition mechanism model are regarded as independent wavelet sources, and the diffusion process of the deposition layer morphology over time, which is described by the following formula: ;in, It is a function of the sedimentary layer height. The diffusion coefficient is... and These are deposition rate and sputtering rate, respectively. This represents the diffusion process. The calculation method described above allows for a more accurate data structure.

[0169] As an optional implementation method, the process of solving the simulation model using the Hall thruster discharge disturbance induced and evolved simulation model to obtain the simulation results may specifically include the following steps:

[0170] The electric force, magnetic force, high-speed particle bombardment force, and pressure gradient force are calculated using the equations governing the motion of the exfoliated material, enabling simultaneous calculation of the plasma discharge and exfoliated material motion processes. The equations governing the exfoliated material motion are as follows: ; For the force on the exfoliated material, The amount of charge carried by the exfoliated material. The electric field strength at the location of the flaking material. The velocity of the detached material. The magnetic field strength at the location of the detached material. For the volume of the exfoliated material, This represents the pressure at the location of the detached material. The number of ion particles in contact with the exfoliated material. To contact the surface of the peeling material, For ion mass, For collision frequency, This refers to the velocity of ions.

[0171] Establish a plasma dynamic filling model that includes the movement of exfoliated material, and in the process of establishing the plasma dynamic filling model, in the space newly occupied by the exfoliated material movement in front of the exfoliated material movement and in the next time step, calculate the plasma absorption and reflection or deposition process based on the interaction between plasma and exfoliated material.

[0172] In the space behind the moving debris and in the next time step, which is vacated by the forward movement of the debris, plasma is filled by using an electric field to obtain the microscopic manifestation of the disturbance process induced by the debris in the channel. The microscopic manifestation includes the particle density distribution and the trend of physical field change.

[0173] Step S30: Analyze the time series data and spatiotemporal distribution data of the working parameters to obtain the characteristic parameters of the entire process of sputtering, deposition, peeling and discharge disturbance corresponding to the Hall thruster.

[0174] In one optional implementation, the target operating parameters include the channel configuration, channel size, and wall material type of the Hall thruster, as well as at least one of the following: applied electric field parameters, magnetic field parameters, cathode discharge current, and the type and flow rate of neutral gas input into the Hall thruster; the operating parameter time series data includes discharge current time series data, particle sputtering and deposition time series data, and physical field time series data; the spatiotemporal distribution data includes at least one of the following: particle density spatiotemporal distribution data, electron temperature axial spatiotemporal distribution data, and ion temperature axial spatiotemporal distribution data; the above analysis of the operating parameter time series data and spatiotemporal distribution data to obtain the characteristic parameters of the discharge perturbation corresponding to the Hall thruster may specifically include the following steps:

[0175] The first operating characteristic parameter is obtained by analyzing the discharge current time series data, which includes the amplitude and duration of the discharge disturbance current. The second operating characteristic parameter is obtained by analyzing the particle sputtering and deposition time series data, which includes the channel wall morphology evolution and erosion / deposition rate. The change trend of the physical field during the discharge disturbance is obtained by analyzing the physical field time series data.

[0176] Analysis of the spatiotemporal distribution data yields a third working characteristic parameter. This third working characteristic parameter includes the variation trends of particle density distribution, wall sputtering particle properties, and wall deposition particle properties during the discharge disturbance. Particle properties include ejection / injection position and velocity. The first working characteristic parameter, the second working characteristic parameter, the variation trends of the physical field during the discharge disturbance, and the third working characteristic parameter are determined as the discharge disturbance characteristic parameters.

[0177] In this embodiment, the target operating parameters of the Hall thruster are input into a full-process simulation model of the Hall thruster, which is obtained by combining multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging cracking, warping and spalling of the deposition layer on the channel wall of the Hall thruster, and a simulation model of discharge disturbance induction and evolution of the Hall thruster. The full-process simulation model of the Hall thruster is then used to simulate the time series data of the operating parameters of the Hall thruster under the target operating parameters and the conditions in the channel of the Hall thruster. By analyzing the spatiotemporal distribution data of plasma and the time series data and spatiotemporal distribution data of the working parameters, characteristic parameters of the entire process of sputtering, deposition, exfoliation and discharge disturbance of Hall thruster are obtained. This can accurately simulate the entire process of induction and evolution of exfoliation on the inner wall of the discharge channel of Hall thruster, and reveal the intrinsic mechanism of plasma discharge disturbance caused by exfoliation. This fills the technical gap in the existing Hall thruster simulation technology that does not associate sputtering / deposition, exfoliation and discharge disturbance, and does not realize the co-simulation of cross-scale particle microdynamics and macroscopic motion of exfoliation.

[0178] The method provided in this application can serve as a simulation method for the entire process of sputtering-deposition-stripping-discharge disturbance of a Hall thruster. It can achieve self-consistent coupling calculation of particle-scale plasma dynamics, wall material evolution behavior, and macroscopic discharge disturbance process within the same numerical framework. By combining a two-dimensional full-particle numerical simulation model, a sputtering-deposition dynamic competition mechanism model, a channel wall deposition layer cracking, warping, and stripping judgment threshold model, and a discharge disturbance induction and evolution simulation model, the method can perform dynamic analysis of the plasma behavior inside the discharge channel throughout the entire process based on target operating parameters.

[0179] The full-process simulation model of this application can input target operating condition parameters such as channel configuration, channel size, wall material, applied electromagnetic field parameters, cathode discharge current, and neutral gas type and flow rate, and obtain key results such as discharge current time series data, particle sputtering and deposition time series data, physical field time series data, and plasma particle density distribution, electron temperature axial distribution, and ion temperature axial distribution. By analyzing the above data, the amplitude and duration of discharge disturbance current, wall morphology evolution characteristics, erosion / deposition rate, physical field change trend, and particle density and particle properties evolution characteristics during disturbance can be extracted, providing a quantitative description for the mechanism study of complex coupled processes.

[0180] This application quantitatively characterizes the sputtering rate under the interaction of high-speed plasma and the wall surface using the sputtering yield distribution function, and describes the temporal evolution characteristics of the deposition layer morphology using the deposition diffusion equation. After the deposition layer is formed, the stress distribution state of the film is obtained by methods such as thermal stress calculation, surface adhesion assessment, and particle bombardment force analysis. Furthermore, the cohesive force model and finite element criteria are used to establish the judgment criteria for film cracking, warping, and peeling, thereby realizing the dynamic prediction of film behavior.

[0181] This application further introduces the equation of motion for the exfoliated material, and simulates the dynamic process of the exfoliated material under the action of electric force, magnetic force, particle bombardment force, and pressure gradient force, so as to achieve simultaneous solution of plasma discharge evolution and exfoliated material motion. Within the space occupied or vacated by the exfoliated material motion, a plasma dynamic filling model is established to calculate the absorption, reflection, deposition, and redistribution processes of plasma, thereby accurately characterizing the plasma disturbances and their propagation characteristics caused by the exfoliation event.

[0182] This application can comprehensively reveal the complex evolution mechanism inside the Hall thruster from the particle scale, wall scale to the system scale through coupled modeling and co-simulation of multi-physics processes. It can realize the spatiotemporal analysis and parameter feature extraction of the entire process of sputtering, deposition, peeling and discharge disturbance, and provide reliable theoretical basis and simulation support for thruster design optimization, lifetime prediction and discharge stability control.

[0183] In some embodiments, the full-process simulation method based on Hall thrust provided in this application may further include: thermal stress calculation process, surface adhesion evaluation process, particle bombardment force evaluation process, and deposition film cracking, warping and peeling determination process.

[0184] The thermal stress calculation process may specifically include the following steps: obtaining the characteristic parameters of the discharge disturbance and the material properties of the sputtered deposited film; calculating the thruster wall heat flux distribution based on the material properties of the sputtered deposited film as input using the third working characteristic parameter; and obtaining the Hall thruster temperature field distribution and the thermal stress distribution of the deposited film on the surface of the thruster components by solving the transient heat conduction control equation using the following formula:

[0185] , , ;

[0186] in, This represents the amount of kinetic energy exchanged between ions. This represents the amount of energy exchanged between ions. Boltzmann's constant, The ion temperature. The potential energy of the wall sheath layer, This refers to the ionization energy released when xenon ions collide with and are neutralized by the wall surface. For material density, For specific heat capacity, Thermal conductivity, For temperature; As an internal heat source, it can take three forms: the heating effect of plasma within the acceleration channel on the wall surface. q Xe+, in Joule heating generated by electromagnets, and thermal radiation from space; f Represents the physical properties of sputtered deposits. Represents the physical properties of the channel surface material; For Young's modulus, Poisson's ratio, For the thickness of the sputtered deposit, For the surface material thickness involved in thermal stress calculation, The coefficient of thermal expansion is This represents the coefficient of thermal expansion of the material on the channel surface. Indicates the coefficient of thermal expansion of sputtered deposits; For thermal stress, T 0, T t These are the initial temperature and the current temperature, respectively. e is the natural constant, representing the base of the natural logarithm function; As an intermediate variable, This represents the Young's modulus of the sputtered sediment. This indicates the Young's modulus of the material on the channel surface;

[0187] The above-mentioned surface adhesion assessment process may include the following specific steps: calculating the interatomic stress tensor using molecular dynamics, and determining the surface adhesion based on the combined force of van der Waals forces and chemical bond forces between the deposited film and the wall surface; interatomic stress tensor This can be expressed by the following formula:

[0188] ;

[0189] in, For the first The volume of an atom For the first The mass of an atom , The first Atoms in and velocity in direction, For the first The atom and the first The pairwise distance between atoms Quantity, For the first The atom and the first Interatomic forces Quantity;

[0190] The aforementioned particle bombardment force assessment process may include the following specific steps: obtaining the spatial density distribution, velocity distribution, and incident angle of the particles; and using the momentum conservation law and the following formula, calculating the plasma bombardment force distribution characteristics on the surface film layer of each component of the Hall thruster based on the spatial density distribution, velocity distribution, and incident angle. : ;in, m For particle mass, n The number of particles per unit volume. v For particle bombardment velocity, The angle between the particle bombardment velocity and the direction of the cantilever beam. A The unit surface area of ​​the sedimentary layer;

[0191] The above-mentioned process for determining the cracking, warping, and peeling of the deposited film may include the following specific steps: calculating the critical value of strain energy release rate using molecular dynamics methods, establishing a cohesive model to analyze the relationship between normal and tangential stress and strain, and establishing criteria for film cracking, warping, and peeling using the finite element method; wherein, film cracking is determined by the following formula: ;

[0192] Film warpage is determined by the following formula: ;

[0193] Criteria for film peeling are ;

[0194] Where I represents the normal direction and II represents the tangential direction. and This represents the strain energy release rate corresponding to the normal and tangential directions. This indicates adjustable interaction parameters. This indicates the total fracture toughness of the material. This represents the shear displacement along the wall direction. Represents residual stress. Indicates the initial strain energy release rate of the material. This indicates the maximum strain energy release rate that the material can withstand. G IC and G IIC represents the maximum strain energy release rate that can be withstood in the normal and tangential directions.

[0195] This application also provides a simulation system for the entire process of Hall thruster sputtering-deposition-stripping-discharge disturbance, such as Figure 3 As shown, the simulation system for the entire process of Hall thruster sputtering-deposition-stripping-discharge disturbance includes:

[0196] Module 301 is used to construct a full-process simulation model of the Hall thruster. The simulation model is obtained by combining multiple physical process simulation models, including: a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging cracking, warping and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model for the induction and evolution of discharge disturbance of the Hall thruster. The simulation model is used to simulate the time series data of the working parameters of the Hall thruster and the spatiotemporal distribution data of plasma in the channel under the target operating conditions.

[0197] The decomposition module 302 is used to decompose the computational tasks of the simulation model, including decomposing the computational tasks of the particle motion model, charge deposition model and collision solution model, as well as decomposing the computational tasks of the electromagnetic field solution model.

[0198] Simulation module 303 is used to solve the simulation model and obtain simulation results. The simulation process includes: quantitatively describing the sputtering rate of high-speed plasma on the wall material; using a sputtering deposition competition model to describe the diffusion and smoothing of the deposited layer morphology over time; calculating the stress state of the deposited film based on thermal stress calculation methods, surface adhesion evaluation methods, and particle bombardment force evaluation methods; establishing criteria for film cracking, warping, and peeling based on the critical value of strain energy release rate and cohesion model; introducing the peeling material motion equation to calculate electric field force, magnetic field force, high-speed particle bombardment force, and pressure gradient force to achieve synchronous calculation of plasma discharge and peeling material motion process; and establishing a plasma dynamic filling model considering peeling material motion to obtain particle density distribution and physical field change trends.

[0199] The processing module 304 is used to analyze the time series data and spatiotemporal distribution data of the working parameters to obtain the characteristic parameters of the entire process of Hall thruster sputtering-deposition-stripping-discharge disturbance, including: discharge disturbance current amplitude and duration, channel wall morphology evolution, erosion / deposition rate, physical field variation trend during disturbance, particle density distribution variation trend during disturbance, and wall sputtering particle properties and deposition particle properties variation trend during disturbance.

[0200] The optimization module 305 is used to repeatedly call the decomposition module, simulation module and processing module during the simulation process until the preset simulation cutoff condition is reached, so as to obtain the full-process numerical description of the discharge disturbance characteristic parameters and wall evolution behavior.

[0201] Figure 4 A schematic diagram of a full-process simulation system based on a Hall thruster is provided. Figure 4 As shown, the full-process simulation system 400 based on Hall thrusters includes:

[0202] The acquisition module 401 is used to acquire the target operating condition parameters of the Hall thruster;

[0203] The simulation module 402 is used to input the target operating condition parameters into a preset Hall thruster full-process simulation model, and to simulate the time series data of the operating parameters of the Hall thruster under the target operating condition parameters and the spatiotemporal distribution data of plasma in the channel of the Hall thruster through the Hall thruster full-process simulation model; wherein, the Hall thruster full-process simulation model is obtained by combining multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging the cracking, warping and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model for the induction and evolution of discharge disturbance of the Hall thruster;

[0204] The analysis module 403 is used to analyze the time series data of the operating parameters and the spatiotemporal distribution data to obtain the characteristic parameters of the entire process of sputtering, deposition, peeling and discharge disturbance of the Hall thruster.

[0205] The full-process simulation system based on Hall thrusters provided in this application has the same technical features as the full-process simulation method based on Hall thrusters provided in the above embodiments, so it can also solve the same technical problems and achieve the same technical effects.

[0206] An electronic device provided in this application embodiment, such as Figure 5 As shown, the electronic device 500 includes a processor 502 and a memory 501. The memory stores a computer program that can run on the processor. When the processor executes the computer program, it implements the steps of the method provided in the above embodiments.

[0207] See Figure 5 The electronic device also includes a bus 503 and a communication interface 504. The processor 502, the communication interface 504 and the memory 501 are connected through the bus 503. The processor 502 is used to execute executable modules, such as computer programs, stored in the memory 501.

[0208] The memory 501 may include high-speed random access memory (RAM) or non-volatile memory, such as at least one disk storage device. Communication between this system network element and at least one other network element is achieved through at least one communication interface 504 (which can be wired or wireless), such as the Internet, wide area network, local area network, or metropolitan area network.

[0209] Bus 503 can be an ISA bus, PCI bus, or EISA bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 5 The symbol is represented by a single double-headed arrow, but this does not mean that there is only one bus or one type of bus.

[0210] The memory 501 is used to store programs. After receiving an execution instruction, the processor 502 executes the program. The method executed by the apparatus defined by the process disclosed in any of the preceding embodiments of this application can be applied to the processor 502 or implemented by the processor 502.

[0211] Processor 502 may be an integrated circuit chip with signal processing capabilities. In implementation, each step of the above method can be completed by the integrated logic circuitry in the hardware of processor 502 or by instructions in software form. The processor 502 can be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it can also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components. It can implement or execute the methods, steps, and logic block diagrams disclosed in the embodiments of this application. The general-purpose processor can be a microprocessor or any conventional processor. The steps of the methods disclosed in the embodiments of this application can be directly manifested as execution by a hardware decoding processor, or execution by a combination of hardware and software modules in the decoding processor. The software module can reside in a mature storage medium in the field, such as random access memory, flash memory, read-only memory, programmable read-only memory, electrically erasable programmable memory, or registers. This storage medium is located in memory 501, and processor 502 reads the information from memory 501 and, in conjunction with its hardware, completes the steps of the above method.

[0212] Corresponding to the above-described full-process simulation method based on Hall thrusters, this application embodiment also provides a computer-readable storage medium storing computer-executable instructions. When the computer-executable instructions are called and run by a processor, the computer-executable instructions cause the processor to perform the steps of the above-described full-process simulation method based on Hall thrusters.

[0213] The full-process simulation system based on Hall thrusters provided in this application embodiment can be specific hardware on the device or software or firmware installed on the device. The device provided in this application embodiment has the same implementation principle and technical effects as the aforementioned method embodiment. For the sake of brevity, any parts not mentioned in the device embodiment can be referred to the corresponding content in the aforementioned method embodiment. Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can all be referred to the corresponding processes in the above method embodiments, and will not be repeated here.

[0214] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the displayed or discussed mutual couplings, direct couplings, or communication connections may be through some communication interfaces; indirect couplings or communication connections between devices or units may be electrical, mechanical, or other forms.

[0215] For example, the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of this application. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram and / or flowchart, and combinations of blocks in block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0216] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0217] In addition, the functional units in the embodiments provided in this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0218] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the full-process simulation method based on the Hall thruster described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0219] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. In addition, the terms "first", "second", "third", etc. are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0220] Finally, it should be noted that the above-described embodiments are merely specific implementations of this application, used to illustrate the technical solutions of this application, and not to limit them. The protection scope of this application is not limited thereto. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the scope of the technology disclosed in this application; and these modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application. All should be covered within the protection scope of this application. Therefore, the protection scope of this application should be determined by the protection scope of the claims.

Claims

1. A full-process simulation method based on a Hall thruster, characterized in that, The method includes: Obtain the target operating parameters of the Hall thruster; The target operating condition parameters are input into a preset Hall thruster full-process simulation model. The Hall thruster full-process simulation model simulates the time series data of the operating parameters of the Hall thruster under the target operating condition parameters and the spatiotemporal distribution data of plasma in the channel of the Hall thruster. The Hall thruster full-process simulation model is obtained by combining multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging cracking, warping and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model of discharge disturbance induction and evolution of the Hall thruster. By analyzing the time series data of the operating parameters and the spatiotemporal distribution data, characteristic parameters of the entire process of sputtering, deposition, stripping and discharge disturbance corresponding to the Hall thruster are obtained; The target operating parameters include the channel configuration, channel size, and wall material type of the Hall thruster, as well as at least one of the following: applied electric field parameters, magnetic field parameters, cathode discharge current, and the type and flow rate of neutral gas input into the Hall thruster; the operating parameter time series data includes discharge current time series data, particle sputtering and deposition time series data, and physical field time series data; the spatiotemporal distribution data includes at least one of particle density spatiotemporal distribution data, electron temperature axial spatiotemporal distribution data, and ion temperature axial spatiotemporal distribution data; the operating parameter time series data and the spatiotemporal distribution data are analyzed to obtain characteristic parameters of the discharge disturbance corresponding to the Hall thruster, including: analyzing the discharge current time series data to obtain a first operating characteristic parameter; wherein, the first operating characteristic parameter includes the discharge disturbance electric... The flow amplitude and duration are analyzed; the time series data of particle sputtering and deposition are analyzed to obtain a second working characteristic parameter; wherein, the second working characteristic parameter includes the evolution of channel wall morphology and erosion / deposition rate; the time series data of the physical field are analyzed to obtain the variation trend of the physical field during discharge disturbance; the spatiotemporal distribution data are analyzed to obtain a third working characteristic parameter; wherein, the third working characteristic parameter includes the variation trend of particle density distribution during discharge disturbance, the variation trend of wall sputtering particle properties during discharge disturbance, and the variation trend of wall deposition particle properties during discharge disturbance, wherein the particle properties include ejection / incident position and velocity; the first working characteristic parameter, the second working characteristic parameter, the variation trend of the physical field during discharge disturbance, and the third working characteristic parameter are determined as discharge disturbance characteristic parameters.

2. The full-process simulation method based on Hall thrusters according to claim 1, characterized in that, Also includes: The sputtering rate of the plasma on the wall material in the channel of the Hall thruster is quantitatively described by the distribution characteristics of the sputtering yield, wherein the sputtering yield is expressed by the following formula: ； in, Y For the sputtering yield, A , B For the fitting parameters, The sputtering energy threshold, The energy of the incident particle. , , The angle of the incident particle. Maximum sputtering angle; f Represents the physical properties of sputtered deposits; e is the natural constant, representing the base of the natural logarithm function.

3. The full-process simulation method based on Hall thrusters according to claim 1, characterized in that, In the Hall thruster sputtering deposition dynamic competition mechanism model, the protrusions or depressions caused by wall sputtering deposition are regarded as independent wavelet sources, and are expressed by the following formula to describe the diffusion and smoothing process of the deposition layer morphology over time: ; in, It is a function of the sedimentary layer height. The diffusion coefficient is... and These are deposition rate and sputtering rate, respectively. This indicates the diffusion process.

4. The full-process simulation method based on Hall thruster according to claim 2, characterized in that, The method includes: thermal stress calculation process, surface adhesion assessment process, particle bombardment force assessment process, and deposition film cracking, warping and peeling determination process.

5. The full-process simulation method based on Hall thrusters according to claim 4, characterized in that, The thermal stress calculation process includes: Obtain the discharge perturbation characteristic parameters and the material properties of the sputtered deposited film; The material properties of the sputtered deposited film are used as input based on the third working characteristic parameter to calculate the heat flux distribution on the thruster wall. The temperature field distribution of the Hall thruster and the thermal stress distribution of the deposited film on the surface of the thruster components are obtained by solving the transient heat conduction control equation using the following formula: ， ， ； in, This represents the amount of kinetic energy exchanged between ions. This represents the amount of energy exchanged between ions. Boltzmann's constant, The ion temperature. The potential energy of the wall sheath layer, This refers to the ionization energy released when xenon ions collide with and are neutralized by the wall surface. For material density, For specific heat capacity, Thermal conductivity, For temperature; As an internal heat source, it can take three forms: the heating effect of plasma within the acceleration channel on the wall surface. q Xe+, in Joule heating generated by electromagnets, and thermal radiation from space; f Represents the physical properties of sputtered deposits. Represents the physical properties of the channel surface material; For Young's modulus, Poisson's ratio, For the thickness of the sputtered deposit, For the surface material thickness involved in thermal stress calculation, The coefficient of thermal expansion is This represents the coefficient of thermal expansion of the material on the channel surface. Indicates the coefficient of thermal expansion of sputtered deposits; For thermal stress, T 0, T t These are the initial temperature and the current temperature, respectively. e is the natural constant, representing the base of the natural logarithm function; As an intermediate variable, This represents the Young's modulus of the sputtered sediment. This indicates the Young's modulus of the material on the channel surface; The surface adhesion assessment process includes: The interatomic stress tensor was calculated using molecular dynamics, and the surface adhesion was determined based on the combined force of van der Waals forces and chemical bonds between the deposited film and the wall surface; the interatomic stress tensor... This can be expressed by the following formula: ； in, For the first The volume of an atom For the first The mass of an atom , The first Atoms in and velocity in direction, For the first The atom and the first The pairwise distance between atoms Quantity, For the first The atom and the first Interatomic forces Quantity; The particle bombardment force assessment process includes: Obtain the spatial density distribution, velocity distribution, and incident angle of the particles; Based on the spatial density distribution, the velocity distribution, and the incident angle, the following formula is used to calculate, using the law of conservation of momentum, the distribution characteristics of the plasma bombardment force on the surface film layer of each component of the Hall thruster are obtained. : ;in, m For particle mass, n The number of particles per unit volume. v For particle bombardment velocity, The angle between the particle bombardment velocity and the direction of the cantilever beam. A The unit surface area of ​​the sedimentary layer; The process for determining cracking, warping, and peeling of the deposited film includes: The critical value of strain energy release rate was calculated using molecular dynamics methods. A cohesive model was established to analyze the relationship between normal and tangential stress and strain. Criteria for film cracking, warping, and peeling were established using the finite element method. Film cracking was determined using the following formula: ; The warpage of the membrane layer is determined by the following formula: ; The criterion for membrane peeling is as follows: ; Where I represents the normal direction and II represents the tangential direction. and This represents the strain energy release rate corresponding to the normal and tangential directions. This indicates adjustable interaction parameters. This indicates the total fracture toughness of the material. This represents the shear displacement along the wall direction. Represents residual stress. Indicates the initial strain energy release rate of the material. This indicates the maximum strain energy release rate that the material can withstand. G IC and G IIC represents the maximum strain energy release rate that can be withstood in the normal and tangential directions.

6. The full-process simulation method based on Hall thruster according to claim 1, characterized in that, The process of solving the simulation model using the Hall thruster discharge perturbation induced and evolved simulation model to obtain the simulation results includes: The electric force, magnetic force, high-speed particle bombardment force, and pressure gradient force are calculated using the equations governing the motion of the exfoliated material, thereby enabling simultaneous calculation of the plasma discharge and the motion of the exfoliated material. The equations governing the motion of the exfoliated material are as follows: ; For the force on the exfoliated material, The amount of charge carried by the exfoliated material. The electric field strength at the location of the flaking material. The velocity of the detached material. The magnetic field strength at the location of the detached material. For the volume of the exfoliated material, This represents the pressure at the location of the detached material. The number of ion particles in contact with the exfoliated material. To contact the surface of the peeling material, For ion mass, For collision frequency, This refers to the velocity of ions. A plasma dynamic filling model incorporating the movement of exfoliated material is established. During the establishment of the plasma dynamic filling model, in the space newly occupied by the exfoliated material in front of the movement of the exfoliated material and at the next time step, the plasma absorption and reflection or deposition process is calculated based on the interaction between the plasma and the exfoliated material. In the space behind the moving debris and in the next time step, which is vacated by the forward movement of the debris, plasma is filled using an electric field to obtain the microscopic manifestation of the disturbance process induced by the debris in the channel. The microscopic manifestation includes particle density distribution and physical field change trend.

7. A full-process simulation system based on a Hall thruster, characterized in that, include: The acquisition module is used to acquire the target operating parameters of the Hall thruster; The simulation module is used to input the target operating condition parameters into a preset Hall thruster full-process simulation model. The Hall thruster full-process simulation model simulates the time series data of the operating parameters of the Hall thruster under the target operating condition parameters and the spatiotemporal distribution data of plasma in the channel of the Hall thruster. The Hall thruster full-process simulation model is obtained by combining multiple physical process simulation models, including a two-dimensional full-particle numerical simulation model of the Hall thruster, a dynamic competition mechanism model of sputtering deposition of the Hall thruster, a threshold model for judging cracking, warping and peeling of the deposition layer on the channel wall of the Hall thruster, and a simulation model of discharge disturbance induction and evolution of the Hall thruster. The analysis module is used to analyze the time series data of the operating parameters and the spatiotemporal distribution data to obtain the characteristic parameters of the entire process of sputtering, deposition, exfoliation and discharge disturbance corresponding to the Hall thruster. The target operating parameters include the channel configuration, channel size, and wall material type of the Hall thruster, as well as at least one of the following: applied electric field parameters, magnetic field parameters, cathode discharge current, and the type and flow rate of neutral gas input into the Hall thruster; the operating parameter time series data includes discharge current time series data, particle sputtering and deposition time series data, and physical field time series data; the spatiotemporal distribution data includes at least one of particle density spatiotemporal distribution data, electron temperature axial spatiotemporal distribution data, and ion temperature axial spatiotemporal distribution data; the analysis module is further used to: analyze the discharge current time series data to obtain a first operating characteristic parameter; wherein, the first operating characteristic parameter includes the discharge disturbance current amplitude and duration; and analyze the particle sputtering and deposition time series data. The data is analyzed to obtain a second working characteristic parameter, which includes the evolution of the channel wall morphology and the erosion / deposition rate. The physical field time series data is analyzed to obtain the variation trend of the physical field during discharge disturbance. The spatiotemporal distribution data is analyzed to obtain a third working characteristic parameter, which includes the variation trend of particle density distribution, wall sputtering particle properties, and wall deposited particle properties during discharge disturbance, wherein the particle properties include ejection / incident position and velocity. The first working characteristic parameter, the second working characteristic parameter, the variation trend of the physical field during discharge disturbance, and the third working characteristic parameter are determined as the discharge disturbance characteristic parameters.

8. An electronic device comprising a memory and a processor, wherein the memory stores a computer program executable on the processor, characterized in that, When the processor executes the computer program, it implements the steps of the method described in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions that, when invoked and executed by a processor, cause the processor to perform the method according to any one of claims 1 to 6.

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