Substrate processing system
By introducing a heat recovery unit and a heat exchanger into the substrate processing device, and using a heat pump to recover heat from the drained liquid to indirectly heat the processing liquid, the problems of large heat fluctuations and high power consumption are solved, achieving more stable temperature control and power saving.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-13
- Publication Date
- 2026-03-06
AI Technical Summary
In existing substrate processing devices, when heat pumps are used to heat the processing liquid, the heat fluctuations are significant and the temperature variation range is small, resulting in high and unstable power consumption.
A heat recovery unit is adopted, which uses a heat pump to recover heat from the drained liquid and indirectly heats the treatment liquid through a heat exchanger, thereby reducing the power consumption of the heater and using the heat pump to indirectly heat the treatment liquid on the line.
It effectively reduces the power required for heating the processing fluid, lowers power consumption, and improves the stability and efficiency of temperature control.
Smart Images
Figure CN121620118A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a substrate processing system for processing a substrate by supplying a processing solution.
[0002] Reference to relevant applications
[0003] This application claims priority to Japanese Patent Application JP2024-145857, filed on August 27, 2024, all disclosures of which are incorporated herein by reference. Background Technology
[0004] Previously, in substrate processing apparatuses that process semiconductor substrates or other types of substrates (hereinafter referred to as "substrate"), various processing solutions (including purified water) were supplied to the substrate and the substrate was processed. Depending on the type of processing, the processing solution was supplied to the substrate after being heated to a desired temperature. The heating or temperature maintenance of the processing solution was performed, for example, by a halogen lamp heater or an electric heater, and most of the electricity was consumed by the heater.
[0005] Japanese Patent Application Publication No. 2022-178121 (Document 1) discloses a technique for heating a processing liquid supplied to multiple substrate processing apparatuses using a heat pump and cooling a coolant. Furthermore, in Figures 11 and 12 of Document 1, high-temperature drain liquid from the substrate processing apparatus is supplied to a drain cooling section, and the drain liquid is cooled by a cooling circulation path. The cooling circulation path is connected to a heat pump device, and heat moves from the cooling circulation path to the heating circulation path, heating the processing liquid.
[0006] However, the previous procedure involved pre-circulating the processing liquid and maintaining it at a specific temperature before supplying it to the substrate processing apparatus when needed. In this case, directly installing a heat pump in the circulation path, as in Document 1, would amplify the impact of heat fluctuations from the heat pump, which is undesirable for processing liquids with a small permissible range of temperature variations. Summary of the Invention
[0007] The purpose of this invention is to provide a new method that utilizes a heat pump and effectively utilizes heat in a substrate processing apparatus.
[0008] Embodiment 1 of the present invention is a substrate processing system comprising: a substrate processing apparatus for supplying a processing liquid to a substrate; a supply unit for guiding the processing liquid to the substrate processing apparatus; and a heat recovery unit for recovering heat from a drained liquid discharged from the substrate processing apparatus; wherein the supply unit comprises: a temperature control unit for circulating the processing liquid in a circulation path and adjusting the temperature of the processing liquid; a supply path for guiding the processing liquid from the temperature control unit to the substrate processing apparatus; and a replenishment path for replenishing the processing liquid to the temperature control unit; and the heat recovery unit comprises a heat pump for recovering heat from the drained liquid and applying heat to the processing liquid flowing in the replenishment path.
[0009] According to the present invention, the power required for heating the processing liquid can be reduced.
[0010] According to the substrate processing system of the present invention, aspect 2 further includes a heat exchanger, wherein the heat recovery unit further comprises a heat exchanger, and the heat pump indirectly recovers heat from the drain liquid via the heat exchanger.
[0011] In the substrate processing system of embodiment 3 of the present invention, wherein the heat recovery unit is located between the heat pump and the heat exchanger, and further comprises a medium tank for temporarily storing the heat medium from the heat exchanger.
[0012] The fourth embodiment of the present invention is a substrate processing system according to the first embodiment (or any one of the first to third embodiments), wherein a drain tank for temporarily storing the drain is further provided in the drain path for the flow of the drain liquid.
[0013] The fifth embodiment of the present invention is a substrate processing system according to embodiment 1 (or any one of embodiments 1 to 4), wherein the heat recovery unit further comprises a heat exchanger, and the heat pump indirectly applies heat to the processing liquid flowing in the replenishment path via the heat exchanger.
[0014] According to Embodiment 6 of the present invention, the substrate processing system of Embodiment 5 is provided, wherein the temperature control unit has a circulation tank on the circulation path, and the processing liquid via the heat exchanger is guided to the circulation tank through the replenishment path, and the supply unit further includes an auxiliary path that guides the processing liquid in the circulation tank to the replenishment path at a position near the heat exchanger.
[0015] Embodiment 7 of the present invention is a substrate processing system according to any one of Embodiments 1 to 6, wherein the processing liquid is purified water.
[0016] The stated purpose, as well as other purposes, features, forms, and advantages, will become clear from the following detailed description of the invention with reference to the accompanying drawings. Attached Figure Description
[0017] Figure 1 This is a top view showing the layout of the substrate processing system.
[0018] Figure 2 This is a diagram showing the processing unit and the supply department.
[0019] Figure 3 This is a diagram showing the configuration of a substrate processing apparatus.
[0020] Figure 4 This diagram represents the supply department and the heat recovery department.
[0021] Figure 5 This is a simplified diagram illustrating the structure of a heat pump.
[0022] Figure 6 This is a diagram showing other examples of heat recovery units. Detailed Implementation
[0023] Figure 1 This is a top view showing the layout of the substrate processing system 10. The substrate processing system 10 is a system for processing a semiconductor substrate 9 (hereinafter referred to as "substrate 9"). The substrate processing system 10 includes an indexing block 101 and a processing block 102 combined with the indexing block 101.
[0024] The indexing block 101 includes a tray holding section 104, an indexing robot 105, and an IR (Index Robot) moving mechanism 106. The tray holding section 104 holds multiple trays 107 capable of accommodating multiple substrates 9. The multiple trays 107 (e.g., FOUP (Front Opening Unified Pod)) are held in the tray holding section 104 in a state of arrangement along a predetermined tray arrangement direction. The IR moving mechanism 106 moves the indexing robot 105 along the tray arrangement direction. The indexing robot 105 performs a removal action to take the substrate 9 out of the tray 107 and a placement action to place the substrate 9 into the tray 107 held by the tray holding section 104. The substrate 9 is transported by the indexing robot 105 in a horizontal position.
[0025] The processing block 102 includes multiple (e.g., four or more) processing units 108 for processing the substrate 9, and a central robot 109. The multiple processing units 108 are arranged to surround the central robot 109 when viewed from above. Various processes on the substrate 9 are performed in the multiple processing units 108. In this embodiment, one processing unit 108 has a tower structure in which three monolithic substrate processing devices are stacked vertically.
[0026] The central robot 109 performs the actions of moving the substrate 9 into the substrate processing apparatus of the processing unit 108 and moving the substrate 9 out of the substrate processing apparatus. Furthermore, the central robot 109 transports the substrate 9 between multiple processing units 108. The substrate 9 is transported by the central robot 109 in a horizontal position. The central robot 109 receives the substrate 9 from the indexing robot 105 and hands it over to the indexing robot 105.
[0027] Figure 2 This diagram shows a processing unit 108 and its surrounding structure, namely the supply unit 200, which supplies purified water to the processing unit 108. The supply unit 200 includes a temperature control unit 20, a supply path 21, and a replenishment path 22. The processing unit 108 has a structure in which three substrate processing devices 1 are stacked vertically. The supply path 21, which guides the heated processing liquid, i.e., purified water (deionized water, hereinafter referred to as "DIW"), is connected to each substrate processing device 1. In addition, other supply paths for supplying other processing liquids such as pharmaceutical solutions are also connected to the substrate processing devices 1, but... Figure 2 The diagram is omitted. Valves 211 are provided on the three supply paths 21, and DIW is supplied to the substrate processing apparatus 1 by opening the valves 211.
[0028] Three supply paths 21 are connected to one circulation path 201. A circulation tank 202, a pump 203, a heater 204, and a filter 205 are provided on the circulation path 201. This configuration forms a temperature control unit 20 that circulates the DIW in the circulation path 201 and adjusts the temperature of the DIW. A portion of the temperature control unit 20 is shared with the configuration that supplies heated DIW to other processing units 108. Specifically, downstream of the heater 204, the circulation path 201 branches into four branches, each branch being a portion of the circulation path 201 used to supply DIW to other processing units 108. The branched circulation paths 201 are then guided to the circulation tank 202. The circulation tank 202, pump 203, and heater 204 are common components of the four temperature control units 20 and are located in the common portion of the four circulation paths 201.
[0029] DIW is pumped from the circulation tank 202 to the heater 204 by the pump 203, and heated to the desired temperature by the heater 204 as needed. Various types of heaters can be used as the heater 204, such as halogen lamp heaters and electric heating wires. The DIW flows further through the filter 205 for foreign matter removal in the circulation path 201, and is supplied to the substrate processing apparatus 1 from the supply path 21 as needed. DIW not guided to the supply path 21 flows further through the circulation path 201 and returns to the circulation tank 202. The temperature of the DIW stored in the circulation tank 202 is constantly measured, and the heater 204 is controlled based on the measurement results. The heater 204 can also be controlled based on the temperatures of the DIW at both the outlet and inlet sides. Thus, DIW at a specific temperature can be continuously supplied to the substrate processing apparatus 1. Furthermore, in the substrate processing system 10, the temperature of DIW in multiple substrate processing apparatuses 1 within the processing unit 108 is adjusted by a single heater 204, achieving a simple configuration for supplying heated DIW. Heater 204 may also have a configuration in which multiple heater elements are connected in series or in parallel. DIW is used as a cleaning solution in substrate processing apparatus 1. DIW can also be used to dilute other processing solutions. DIW is replenished to the circulation tank 202 of temperature control unit 20 from replenishment path 22.
[0030] Furthermore, the number of substrate processing devices 1 within the processing unit 108 is not limited to 3, and may be, for example, 4. Preferably, the number of substrate processing devices 1 within the processing unit 108 is 2 or more. The number of substrate processing devices 1 within the processing unit 108 may also be 1. Since one heater 204 is provided for each of the four processing units 108, the manufacturing cost of the substrate processing system 10 can be reduced compared to providing heaters in each processing unit 108 or each substrate processing device 1.
[0031] Figure 3 This diagram illustrates the configuration of a substrate processing apparatus 1. The substrate processing apparatus 1 includes a substrate holding section 31, a substrate rotation mechanism 32, a cup section 33, multiple supply nozzles 34, and a housing 35. The substrate holding section 31, substrate rotation mechanism 32, cup section 33, and supply nozzles 34 are housed within the internal space of the housing 35. An airflow forming section 351 is provided on the top cover of the housing 35 to form a downward-flowing airflow (so-called downflow) of gas supplied to the internal space. The airflow forming section 351 may, for example, utilize an FFU (Fan Filter Unit). The substrate processing apparatus 1 further includes a control section (not shown), which controls the substrate holding section 31, substrate rotation mechanism 32, cup section 33, and supply nozzles 34, etc.
[0032] The substrate holding portion 31 holds the substrate 9 in a horizontal state. The substrate holding portion 31 may be, for example, a clamp that holds the outer edge of the generally circular substrate 9 with a plurality of holding pins. The substrate holding portion 31 may also be a clamp that contacts and adheres to the central portion of the lower surface of the substrate 9.
[0033] A substrate rotation mechanism 32 is disposed below the substrate holding portion 31. The substrate rotation mechanism 32 rotates the substrate 9 together with the substrate holding portion 31 around a rotation axis J1 that extends substantially parallel in the vertical direction. The substrate rotation mechanism 32 includes a mechanical shaft 321 and a motor 322. The mechanical shaft 321 is a substantially cylindrical or substantially cylindrical component centered on the rotation axis J1. The mechanical shaft 321 extends vertically and is connected to the center of the lower surface of the substrate holding portion 31. The motor 322 is an electric rotary motor that rotates the mechanical shaft 321. Alternatively, the substrate rotation mechanism 32 may be a motor with other structures (e.g., a hollow motor).
[0034] The supply nozzle 34 supplies the substrate 9 with a treatment solution for liquid treatment. The treatment solution includes SPM (Sulfuric acid hydrogen peroxide mixture), SC1 (ammonia, hydrogen peroxide mixture), SC2 (hydrochloric acid, hydrogen peroxide mixture), and other cleaning solutions, also known as DIW. Figure 3 The diagram shows two supply nozzles 34 that spray processing liquid from above the substrate 9 toward the upper surface of the substrate 9, but other nozzles may also be provided. The outlet of each supply nozzle 34 can be moved between a position above the substrate 9 and a position away from the substrate 9 by a nozzle moving mechanism (not shown).
[0035] The cup portion 33 has an annular cup centered on the rotation axis J1, which receives liquids such as processing liquids that are dispersed from the rotating substrate 9. At the bottom of the cup portion 33, a drain port (not shown) is provided to discharge the processing liquids such as processing liquids received in the cups to the outside of the housing 35.
[0036] As an example of the processing of substrate 9 in substrate processing apparatus 1, high-temperature SPM is first supplied to substrate 9, which is held in substrate holding section 31 and rotating. Then, heated DIW is supplied to substrate 9 as a cleaning solution. Next, high-temperature SC1 is supplied to the rotating substrate 9, and then heated DIW is supplied to substrate 9 as a cleaning solution. Once the supply of cleaning solution is completed, substrate 9 rotates at high speed and is dried.
[0037] Figure 4 This diagram illustrates the configuration in the substrate processing system 10 where the heat from the drained liquid discharged from the substrate processing apparatus 1 is used to heat the DIW supplied to the substrate processing apparatus 1. Figure 4 In this diagram, only one processing unit 108 is shown, and illustrations of components such as pumps or valves are omitted. Illustrations of the control unit that controls the operation of each component are also omitted. (This is in contrast to...) Figure 2 The components of the supply section 200 are only shown as processing unit 108, supply path 21, circulation path 201, circulation tank 202, heater 204, and replenishment path 22.
[0038] The high-temperature processing liquid discharged from each substrate processing unit 1, also known as the drain liquid, is discharged to the outside of the substrate processing system 10 via the discharge path 11. The substrate processing system 10 has a heat recovery unit 40, which recovers the heat of the drain liquid flowing in the discharge path 11 and applies heat to the DIW flowing in the replenishment path 22. The heat recovery unit 40 is configured in a common manner for the four processing units 108. That is, in the substrate processing system 10, the circulation tank 202, the pump 203 (see reference) Figure 2 The heater 204 and the heat recovery unit 40 are configured in a manner common to the four processing units 108.
[0039] The heat recovery unit 40 includes a heat pump 41, a first heat exchanger 42 disposed on the discharge path 11 side of the heat pump 41, a second heat exchanger 43 disposed on the temperature control unit 20 side of the heat pump 41, and a medium tank 44 disposed between the first heat exchanger 42 and the heat pump 41. The heat medium, i.e., clean water, is stored in the medium tank 44. In the substrate processing system 10, there is one heat pump 41.
[0040] A circulation path 421 is provided between the first heat exchanger 42 and the medium tank 44. Through the circulation path 421, clean water flows from the first heat exchanger 42 to the medium tank 44 and back from the medium tank 44 to the first heat exchanger 42. The medium tank 44 functions within the circulation path 421 as a buffer tank for temporarily storing the hot medium from the first heat exchanger 42. "Temporarily storing" means storing the incoming fluid in the tank and discharging the fluid from the tank when needed (the same applies below).
[0041] A circulation path 422 is provided between the medium tank 44 and the heat pump 41. Through the circulation path 422, clean water flows from the heat pump 41 to the medium tank 44 and back from the medium tank 44 to the heat pump 41. The medium tank 44 also functions as a buffer tank in the circulation path 422. In the circulation paths 421 and 422, the flow path 423 for introducing clean water into the medium tank 44 and the flow path 424 for discharging clean water from the medium tank 44 are interconnected. A pump (not shown) is installed on the flow path 424.
[0042] A circulation path 431 is provided between the second heat exchanger 43 and the heat pump 41. Through the circulation path 431, the heat medium, namely clean water, flows from the second heat exchanger 43 to the heat pump 41 and returns from the heat pump 41 to the second heat exchanger 43.
[0043] Substrate processing system 10 is connected to DIW supply source 5. Supplement path 22 is connected to DIW supply source 5, and DIW from DIW supply source 5 is guided to circulation tank 202 via supplement path 22 and second heat exchanger 43. Furthermore, supply unit 200 has a portion 222 connecting DIW supply source 5 and second heat exchanger 43 in supplement path 22, and an auxiliary path 221 connecting to circulation tank 202. Through auxiliary path 221, DIW in circulation tank 202 is guided to supplement path 22 near the second heat exchanger 43 (i.e., upstream position). Supply unit 200 further has a portion 224 connecting second heat exchanger 43 and circulation tank 202 in supplement path 22, and a bypass 223 connecting DIW supply source 5. Through bypass 223, DIW is guided to supplement path 22 near the circulation tank 202.
[0044] Figure 5 This is a simplified diagram illustrating the structure of a heat pump 41. The heat pump 41 includes a compressor 411, an expansion valve 412, a condenser 413, an evaporator 414, and a circulation path 415. The compressor 411, condenser 413, expansion valve 412, and evaporator 414 are arranged in the circulation path 415 in the order described above. Carbon dioxide (CO2) is used as the heat medium flowing within the circulation path 415. However, the heat medium of the heat pump 41 is not limited to carbon dioxide. Circulation path 431 (reference) Figure 4 It is connected to the condenser 413. The circulation path 422 is connected to the evaporator 414.
[0045] Compressor 411 is a compression pump. The heat medium, compressed and heated by compressor 411, is heated by the heat exchanger (condenser) 413, which then applies heat to the water flowing in the circulation path, turning it into a liquid. The heat medium is then guided from condenser 413 to expansion valve 412. After the pressure and temperature decrease, it receives heat from the water flowing in circulation path 422 via heat exchanger 414, evaporating into a gas. The heat medium then returns to compressor 411. Through this process, heat pump 41 utilizes the heat from the water flowing in circulation path 422 to heat the water flowing in circulation path 431. In heat pump 41, electricity is primarily consumed during the compression of the heat medium, thus theoretically achieving a heating capacity exceeding the power consumption.
[0046] Next, regarding Figure 4 The operation of the heat recovery unit 40 will be explained. The drained liquid discharged from the substrate processing apparatus 1 is guided to the first heat exchanger 42 via the drain path 11. The drain path 11 is provided for each type of drained liquid, but... Figure 4 This only represents one discharge path 11. It is not necessary to connect all discharge paths 11. Figure 4The heat recovery section 40. The drain temperature is preferably 20°C or higher and 65°C or lower. Drainage options include, for example, used SPM, SC1, SC2, and hot-dip DIW.
[0047] The heat from the drained liquid is applied to the clean water flowing in the circulation path 421 via the first heat exchanger 42. The drained liquid flows intermittently in the discharge path 11, but the temperature change of the clean water is mitigated by the medium tank 44 provided in the circulation path 421. The clean water is guided to the evaporator 414 of the heat pump 41 via the circulation path 422. Thus, the heat of the clean water on the evaporator 414 side is used to heat the clean water on the condenser 413 side. In other words, the heat of the clean water on the first heat exchanger 42 side is used to heat the clean water flowing in the circulation path 431 on the second heat exchanger 43 side.
[0048] The heated clean water is guided to the second heat exchanger 43 through circulation path 431, and the second heat exchanger 43 applies heat to the DIW flowing in the replenishment path 22. That is, the heat pump 41 indirectly applies heat to the treatment liquid, i.e., the DIW, flowing in the replenishment path 22 via the second heat exchanger 43. The heated DIW is then guided to circulation tank 202.
[0049] By using heat pump 41 to heat the DIW flowing in replenishment path 22, the power required for heating the DIW flowing in circulation path 201, i.e., the power consumed by heater 204, can be reduced. As a result, a low-cost heater can be used as heater 204, and the load on additional cooling fluid is also reduced. Furthermore, by using heat pump 41 to heat the DIW flowing in replenishment path 22, the temperature change of the DIW in circulation path 201 can be suppressed compared to using a heat pump to heat the DIW in circulation path 201.
[0050] In the heat recovery section 40, the heat pump 41 indirectly recovers heat from the drain liquid via the first heat exchanger 42. This prevents the drain liquid from corroding the heat pump 41. Furthermore, in the heat recovery section 40, the heat pump 41 indirectly applies heat to the DIW flowing in the replenishment path 22 via the second heat exchanger 43. This ensures the pressure resistance of the heat pump 41 and easily maintains the cleanliness of the so-called ultrapure water, i.e., the DIW. Here, "indirectly" means that the heat pump 41 is not connected to the drain path 11 or the replenishment path 22, and heat can be exchanged between the heat pump 41 and the drain path 11 or the replenishment path 22 in various forms.
[0051] As described above, DIW from DIW supply source 5 can be supplied via bypass 223 to section 224 between the second heat exchanger 43 and the circulation tank 202 of supplementary path 22. Heat pump 41 is preferably operated continuously as much as possible. If the temperature of the DIW discharged from the second heat exchanger 43 becomes too high due to continuous operation of heat pump 41, the temperature of the DIW can be reduced before it is supplied to circulation tank 202 by opening the valve on bypass 223.
[0052] Furthermore, the auxiliary path 221, which guides DIW from the circulation tank 202 to the portion 222 between the second heat exchanger 43 and the DIW supply source 5, is used to guide the DIW heated via the auxiliary path 221 to the second heat exchanger 43 in advance when the heat recovery unit 40 is started, and to maintain a constant state within the second heat exchanger 43. The auxiliary path 221 can also be used from... Figure 2 The position branch between pump 203 and heater 204.
[0053] Figure 6 This is a diagram showing other examples of the heat recovery unit 40. In Figure 6 In the example, from Figure 4 The heat recovery section 40 omits the medium tank 44, and the drain tank 12 is provided on the drain path 11. Figure 6 In the middle, to and Figure 4 The same constituent elements are labeled with the same symbols.
[0054] exist Figure 6 In the heat recovery unit 40, a circulation path 425 is provided between the first heat exchanger 42 and the heat pump 41. The clean water flowing in the circulation path 425 receives heat from the drained liquid flowing in the discharge path 11 by the first heat exchanger 42 and is guided to the heat pump 41.
[0055] As described above, the drain solution is intermittently discharged from the substrate processing apparatus 1. The heat recovery unit 40 has a drain tank 12 on the drain path 11, where the drain solution is temporarily stored. Then, in the portion 111 downstream of the drain tank 12 of the drain path 11, the drain solution flows at a specific flow rate. As a result, the drain solution passes through the first heat exchanger 42 at a specific flow rate, enabling the application of a specific amount of heat per unit time to the clean water on the heat pump 41 side. Consequently, the heat pump 41 can be operated in a specific state or at specific intervals, thus ensuring the stable operation of the heat recovery unit 40.
[0056] The substrate processing system 10 described herein is merely one example, and various methods can be employed to implement the substrate processing system 10. For instance, the substrate processing system 10 may have one or more processing units 108. The substrate processing system 10 may also have one substrate processing device 1.
[0057] Various configurations can be adopted for the first heat exchanger 42 and the second heat exchanger 43. The first heat exchanger 42 and the second heat exchanger 43 are directly or indirectly connected to the heat pump 41, and therefore the fluid velocity in the two internal flow paths where heat exchange occurs is preferably adjustable. However, the configuration of the heat exchanger is not limited to this; a simple configuration can also be used, where a pipe supplying one fluid is placed in a tank temporarily storing another fluid. As long as the heat exchanger can exchange heat between the fluids flowing in the two flow paths respectively, it can be configured in various ways.
[0058] The processing liquid supplied by the substrate processing apparatus 1 to the substrate 9, that is, the processing liquid that circulates in the circulation path 201 through the temperature control unit 20 and whose temperature is adjusted, is not limited to DIW. For example, sulfuric acid or ammonia water, hydrogen peroxide water, hydrofluoric acid, and other chemical solutions can also circulate in the circulation path 201 and have their temperature adjusted. The chemical solution (essentially the processing liquid) is mixed and sprayed onto the substrate as a processing liquid such as SPM, SC1, or SC2. At this time, the DIW described above is replaced with a processing liquid containing chemical solutions, and the replenishment path 22 replenishes the temperature control unit 20 with the processing liquid. Furthermore, as described above, in the heat recovery unit 40, the drain liquid that is discharged from the substrate processing apparatus 1 and from which heat is recovered can be of various kinds. Therefore, the processing liquid and the drain liquid can be different types of liquids or the same type of liquid.
[0059] In addition, when the treatment fluid is a chemical solution such as SPM, SC1, or SC2, by installing a second heat exchanger 43 between the heat pump 41 and the replenishment path 22, it is not necessary to make the heat pump 41 a corrosion-resistant structure.
[0060] Depending on the type of drained liquid, the first heat exchanger 42 may be omitted. In this case, the drain path 11 is directed to the heat pump 41, and the heat from the drained liquid is directly applied to the heat pump 41. Similarly, depending on the type of processing liquid supplied to the substrate processing apparatus 1, the second heat exchanger 43 may be omitted. In this case, the processing liquid in the replenishment path 22 is directly heated by the heat pump 41. Thus, in the heat recovery unit 40, the peripheral configuration of the heat pump 41, which recovers heat from the drained liquid and applies heat to the processing liquid flowing in the replenishment path 22, can be modified in various ways. In any configuration, by using the heat from the drained liquid to heat the processing liquid flowing in the replenishment path 22, the temperature change of the processing liquid flowing in the circulation path 201 can be suppressed, and the power required to heat the processing liquid can be reduced.
[0061] exist Figure 4 In the example, a dielectric tank 44 is provided in the substrate processing system 10, in Figure 6 In the example, a drain tank 12 is provided, but in the substrate processing system 10, both tanks can be omitted, or two tanks can be provided. Figure 4 and Figure 6Although illustrations of pumps, valves, and filters are omitted, these can be appropriately included as needed.
[0062] The substrate 9 processed by the substrate processing apparatus 1 is not limited to a semiconductor wafer, but may also be a glass substrate for photomasks, a glass substrate for liquid crystal displays, a glass substrate for plasma displays, a substrate for FED (Field Emission Display), a substrate for optical discs, a substrate for magnetic disks, and a substrate for magneto-optical discs, etc. Figure 1 The layout of the substrate processing system 10 is only one example. It can also be a substrate processing system without robots, or a substrate processing system with only one substrate holding part or substrate rotation mechanism.
[0063] The components in the described embodiments and variations can be appropriately combined as long as they do not contradict each other.
[0064] Although the invention has been described and illustrated in detail, the description is illustrative only and not limiting. Therefore, various variations or forms can be achieved without departing from the scope of the invention.
[0065] [Explanation of Symbols]
[0066] 1. Substrate processing apparatus
[0067] 9 Substrates
[0068] 10 Substrate Processing System
[0069] 11. Drainage path
[0070] 12 drain tank
[0071] 20 Temperature Control Section
[0072] 21 Supply Route
[0073] 22 Supplementary Route
[0074] 40 Heat Recovery Department
[0075] 41 Heat Pump
[0076] 42 First heat exchanger
[0077] 43. Second heat exchanger
[0078] 44 Medium tank
[0079] 200 Supply Department
[0080] 201 Loop
[0081] 202 Circulation Tank
[0082] 221 Auxiliary Road.
Claims
1. A substrate processing system comprising: a substrate processing apparatus that supplies a processing liquid to a substrate; a supply section that guides the processing liquid to the substrate processing apparatus; and a heat recovery section that recovers heat from a discharge liquid discharged from the substrate processing apparatus, and wherein the supply section comprises: a temperature adjustment section that circulates the processing liquid in a circulation path and adjusts a temperature of the processing liquid; a supply path that guides the processing liquid from the temperature adjustment section to the substrate processing apparatus; and a replenishment path that replenishes the temperature adjustment section with the processing liquid, and wherein the heat recovery section comprises a heat pump that recovers heat from the discharge liquid and applies heat to the processing liquid flowing in the replenishment path.
2. The substrate processing system according to claim 1, wherein the heat recovery section further comprises a heat exchanger, and the heat pump indirectly recovers heat from the discharge liquid via the heat exchanger.
3. The substrate processing system according to claim 2, wherein the heat recovery section further comprises a medium tank that temporarily stores a heat medium from the heat exchanger, between the heat pump and the heat exchanger.
4. The substrate processing system according to claim 1, wherein a discharge liquid tank that temporarily stores the discharge liquid is further provided on a discharge path through which the discharge liquid flows.
5. The substrate processing system according to claim 1, wherein the heat recovery section further comprises a heat exchanger, and the heat pump indirectly applies heat to the processing liquid flowing in the replenishment path via the heat exchanger.
6. The substrate processing system according to claim 5, wherein the temperature adjustment section comprises a circulation tank on the circulation path, the processing liquid that passes through the heat exchanger via the replenishment path is guided to the circulation tank, and the supply section further comprises an auxiliary path that guides the processing liquid in the circulation tank to the replenishment path at a position near the heat exchanger.
7. The substrate processing system according to any one of claims 1 to 6, wherein the processing liquid is pure water.
Citation Information
Patent Citations
Substrate processing system
JP2022178121A
Program, server, and label data sharing system
JP2024145857A