Forming method and application for miniature semiconductor film coating structure
By using a PI composite adhesive with a specific formulation, the problem of adhesive layer aging in the molding film at high temperatures was solved, achieving stability and cleanliness in semiconductor chip packaging and meeting the quality and efficiency requirements of large-scale production.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-05
- Publication Date
- 2026-03-10
AI Technical Summary
Existing molded films are prone to adhesive layer aging during high-temperature curing, leading to difficulties in disassembly, residual adhesive, or detachment, which fails to meet the stability and cleanliness requirements of semiconductor chip packaging.
A PI composite adhesive with a specific ratio, including polyimide liquid, modifier A and modifier B, forms a multi-component cross-linked network, optimizing the balance between adhesion and cohesion, ensuring stable adhesion at high temperatures and easy disassembly, and reducing adhesive residue.
It maintains stable adhesion at high temperatures, and is clean and thorough during disassembly, reducing or even eliminating residual adhesive, thus meeting the quality and efficiency requirements of large-scale semiconductor device production.
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Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of electronic components, more specifically, it relates to a forming method for a micro semiconductor film structure and application. BACKGROUND
[0002] In the field of modern electronic manufacturing, semiconductor chips, as the core component of electronic devices, are developing rapidly. With the continuous progress of science and technology, semiconductor chips are developing rapidly towards miniaturization and high performance. This trend makes the integration of semiconductor chips higher and higher, and the performance more and more powerful, widely used in computers, communications, consumer electronics and many other fields, greatly promoting the prosperity of electronic information industry.
[0003] However, the miniaturization and high performance of semiconductor chips have put forward more stringent requirements for their packaging technology. As a key auxiliary carrier for the production and packaging of semiconductor chips, the importance of micro semiconductor film structure is increasingly prominent. Optimizing the production process of micro semiconductor film structure can not only significantly improve the production efficiency of semiconductor chips, reduce the production cycle and cost, but also improve the quality and reliability of the chips.
[0004] A good micro semiconductor film structure can provide stable support and protection for the packaging of semiconductor chips, effectively avoid the interference and damage of the chip by the external environment, help to improve the stability and service life of the chip, and further promote the development of electronic devices towards smaller size and higher performance, meet the market demand for continuous upgrading of electronic devices.
[0005] In the construction process of micro semiconductor film structure, in order to facilitate the subsequent packaging operation of each part, the industry generally adopts the method of covering the forming film on the surface of micro semiconductor support. Its complete production process is based on the core process of "support pretreatment → film structure forming → sealing → high temperature curing → film tearing treatment".
[0006] Specifically, in the support pretreatment stage, the micro semiconductor support will be cleaned comprehensively, through specific cleaning process and equipment, to remove the oil stains, dust and various impurities attached to its surface, so as to ensure the good combination between materials in the subsequent process. Film structure forming, generally selects forming film with specific performance, such as polyimide film with high temperature resistance and chemical corrosion resistance, etc., to form film structure on the surface of support, to obtain corresponding semiconductor film structure.
[0007] During the encapsulation operation, the semiconductor film structure is placed in a specially designed mold, and the encapsulation material such as epoxy resin is injected, and then heated to about 150°C for preliminary forming and curing, so that the encapsulation material can fully fill the mold cavity and completely encapsulate the chip and pins on the support to form a complete shell with protective effect. The wire bonding process uses fine metal wires such as gold wire and copper wire to reliably connect the electrodes of the chip and the pins of the support through mature processes such as hot pressure bonding, ultrasonic bonding, and thermal ultrasonic bonding, to achieve electrical connection between the chip and the external circuit.
[0008] In the high-temperature curing stage, after encapsulation and wire bonding, the device is placed in a high-temperature environment (220-250°C) for a period of time to further cure the encapsulation material and improve the strength and stability of the encapsulation. Finally, the film is removed. After high-temperature curing, the auxiliary role of the formed film has been completed, and it is removed from the surface of the PPF support by mechanical peeling or heating, exposing the final encapsulation structure, so that subsequent testing (such as electrical performance testing) and assembly can be performed.
[0009] However, most existing forming films use PI, PET, PBT, etc. as the substrate, and a glue layer is formed on the surface of the substrate. The glue is usually polyurethane or polyurethane acrylate. During high-temperature curing, the high-temperature curing temperature of some devices is relatively high (even as high as 250°C), and the high temperature can easily damage the existing adhesive layer structure, causing it to age prematurely. Therefore, when the forming film is removed, it is easy to leave residue on the support and chip, affecting overall use. Or it is difficult to remove and falls off during high-temperature curing and encapsulation, which cannot meet the stability of the forming film and the cleanliness of the semiconductor chip encapsulation.
[0010] In summary, the current technical problems, the core technical requirements of the forming film in the field of semiconductor film structure production are clear: a new type of forming film (or improvement of the substrate and glue formula of the existing forming film) is needed, which can maintain stable adhesion performance in a high-temperature curing environment of up to 250°C, avoid premature falling off of the forming film, ensure the smooth progress of core processes such as encapsulation and wire bonding, and after high-temperature curing, the forming film can be completely removed by conventional peeling method, without leaving residue on the support surface, balancing high-temperature stability and peeling cleanliness, meeting the quality and efficiency requirements of semiconductor device mass production. SUMMARY
[0011] To solve the problem of stable and reliable adhesion of the forming film in the micro semiconductor film structure during the use period, and balance the high-temperature stability and peeling cleanliness, and also achieve clean and complete peeling when needed, minimize or even eliminate residue, to meet the quality and efficiency requirements of semiconductor device mass production.
[0012] In a first aspect, a forming method for a micro semiconductor film structure comprises the following steps: Step 1): PI glue is coated on the surface of the film, and a layer of glue is formed on the surface of the film after curing, thereby obtaining a shaped film; Step 2): The glue layer of the shaped film is covered on one side of the micro semiconductor support, and then heat pressing is performed, thereby obtaining a micro semiconductor film structure; The PI composite glue is composed of the following raw materials in percentage by weight: Polyimide glue solution: 50-78%; Modifier A: 10-22%; Modifier B: 10-18%; Polyvinyl imine: 2-10%; The B modifier is a hyperbranched acrylate oligomer and / or an acryloxy functionalized oligosiloxane. The A modifier is a combination of one or more of a polyether type MDI capped polyurethane prepolymer, a tertiary carbon glyceryl acrylate, and an aliphatic polyurethane di-functional acrylate oligomer, wherein at least one is a polyether type MDI capped polyurethane prepolymer.
[0013] By using the above technical solution, PI composite glue is first coated on the surface of the film and cured to form a glue layer to obtain a shaped film, thereby avoiding the problem of excessive adhesion, easy generation of residual glue, or inability to tear open caused by pasting before curing. The PI composite glue composed of polyimide glue solution, modifier A, modifier B, and polyvinyl imine in specific percentage by weight is first coated on the surface of the film and cured to form a glue layer to obtain a shaped film, thereby avoiding the problem of excessive adhesion, easy generation of residual glue, or inability to tear open caused by pasting before curing.
[0014] The B modifier is a hyperbranched acrylate oligomer and / or an acryloxy functionalized oligosiloxane, the A modifier is a combination of one or more of a polyether type MDI capped polyurethane prepolymer, a tertiary carbon glyceryl acrylate, and an aliphatic polyurethane di-functional acrylate oligomer, and at least one is a polyether type MDI capped polyurethane prepolymer. These raw materials have synergistic effect, the crosslinking network formed by multiple components and the intermolecular force synergistically improve the cohesive force, and the balance of adhesion and cohesion is optimized. The multiple components in the system synergistically reduce the viscosity of the glue layer, improve the thermal fluidity, and reduce the glass transition temperature, and the introduction of flexible segments and polar groups synergistically act.
[0015] The flexible segments of the polyether type MDI capped polyurethane prepolymer and the aliphatic polyurethane di-functional acrylate oligomer provide sufficient flexibility to the adhesive layer, relieve the brittleness of PI, and improve the toughness of the adhesive layer. The intermolecular forces such as hydrogen bonds, van der Waals forces, etc. formed by the polar amino groups of polyethyleneimine, the polar groups of PI, and the components synergistically improve the adhesion of the adhesive layer to the semiconductor substrate. The ester groups of tertiary carbon glyceryl acrylate can also enhance the polarity of the system and assist in improving the adhesion. The shaped film is hot-pressed on the micro semiconductor support to obtain a micro semiconductor film structure, so that the shaped film has stable and reliable adhesion during the use period, and can be cleanly and completely peeled off when needed, minimizing or even eliminating residual glue.
[0016] In summary, by adding modifier A and modifier B to the polyimide adhesive solution, the intermolecular forces of the cross-linked network formed by multiple components synergistically improve the cohesion, optimize the balance between adhesion and cohesion, and enable the shaped film to maintain stable adhesion properties in a high-temperature curing environment of up to 250℃, avoiding premature detachment and ensuring the smooth progress of core processes such as encapsulation and wire bonding. At the same time, the multiple components in the system synergistically reduce the viscosity of the adhesive layer, improve the thermal fluidity, and lower the glass transition temperature. The introduction of flexible segments and polar groups synergistically allows the shaped film to be completely detached by conventional peeling methods after high-temperature curing, without leaving residual glue on the support surface. The micro semiconductor film structure combines high-temperature stability and clean peeling, meeting the quality and efficiency requirements of semiconductor device mass production.
[0017] Preferably, the B modifier is composed of hyperbranched acrylate oligomer and acryloyl oxygen functionalized oligomeric siloxane in a weight ratio of 1: (1-3).
[0018] By adopting the technical scheme, the PI composite glue is coated on the surface of the film and solidified to form a glue layer to obtain a shaped film, and then the shaped film is hot-pressed on the micro semiconductor support to obtain a micro semiconductor film-covered structure. The hyperbranched acrylate oligomer and the acryloyl functionalized oligomeric siloxane form the B modifier with a weight ratio of 1: (1-3), which can solve the problems of "difficult coating" and "poor substrate wetting" of the polyimide glue, form a "multiple toughening structure" and a "internal barrier + surface protection" double weathering system, and have good viscosity reduction and interface adjustment effects, which can reduce the viscosity of the glue and improve the wetting performance of the low surface energy substrate. The auxiliary toughening effect is good, and the room temperature and low temperature toughness are considered. The weather resistance is significantly improved, and the stability of the glue layer in extreme environments is enhanced. The close adhesion of the shaped film on the surface of the film is further improved, which makes it easy to press and attach, and the film is not affected during hot pressing. Residual glue is not easy to produce during disassembly, so that the shaped film has stable and reliable adhesion during the use period, and clean and complete peeling can be achieved when disassembly is required, the high-temperature stability and peeling cleanliness are considered, and the quality and efficiency requirements of semiconductor device mass production are met.
[0019] Preferably, the A modifier is composed of a polyether type MDI capped polyurethane prepolymer, a tertiary carbon glycerol acrylate, and an aliphatic polyurethane di-functional acrylate oligomer with a weight ratio of 10: (1-3): (2-4).
[0020] By adopting the above technical scheme, the performance of the PI composite glue can be further optimized, so that the glue layer can further reduce excessive adhesion to the semiconductor after solidification while ensuring stable adhesion to the surface of the film, and is more easily attached to the semiconductor after hot pressing. Residual glue is not easy to produce during disassembly; the cohesive force is higher, the resistance to extreme use environment of the semiconductor is stronger, and the ultra-thin glue layer also has better advantages; at the same time, under the joint action of the A and B modifiers and the polyethylene imine, the glue is tightly adhered to the surface of the film, and the glue layer is more easily pressed and attached to the semiconductor and does not affect the film state during hot pressing. The shaped film has stable and reliable adhesion during the use period, and can be cleanly and completely peeled off during disassembly, which maximizes the reduction or even elimination of residual glue, so that the micro semiconductor film-covered structure considers the high-temperature stability and peeling cleanliness, and meets the quality and efficiency requirements of semiconductor device mass production.
[0021] Preferably, the film is a PI film.
[0022] By adopting the technical scheme, the film is made of PI film, and PI glue is coated on the surface of the film. Since the polarities are the same, the glue layer is more stable after curing, and the generation of residual glue during disassembly is reduced to a certain extent. The glue layer of the shaping film is covered on one side of the micro semiconductor support, and the micro semiconductor film structure is formed by hot pressing. The PI composite glue with a specific weight percentage of raw materials is used to ensure that the shaping film is stably attached to the chip of the semiconductor support. The shaping film has stable and reliable adhesion during the use period, and can be completely peeled off when disassembly is needed. The generation of residual glue is minimized or even eliminated. The micro semiconductor film structure has high temperature stability and clean peeling performance, and meets the quality and efficiency requirements of large-scale production of semiconductor devices.
[0023] Preferably, the thickness of the film is ≤30 μm.
[0024] By adopting the technical scheme, the film is made of PI film, and PI glue is coated on the surface of the film. Since the polarities are the same, the glue layer is more stable after curing, and the generation of residual glue during disassembly is reduced to a certain extent. The glue layer of the shaping film is covered on one side of the micro semiconductor support, and the micro semiconductor film structure is formed by hot pressing. The PI composite glue with a specific weight percentage of raw materials is used to ensure that the shaping film is stably attached to the chip of the semiconductor support. The shaping film has stable and reliable adhesion during the use period, and can be completely peeled off when disassembly is needed. The generation of residual glue is minimized or even eliminated. The micro semiconductor film structure has high temperature stability and clean peeling performance, and meets the quality and efficiency requirements of large-scale production of semiconductor devices.
[0025] Preferably, the thickness of the glue layer is ≤1 μm.
[0026] By adopting the technical scheme, the film is made of PI film, and PI glue is coated on the surface of the film. Since the polarities are the same, the glue layer is more stable after curing, and the generation of residual glue during disassembly is reduced to a certain extent. The glue layer of the shaping film is covered on one side of the micro semiconductor support, and the micro semiconductor film structure is formed by hot pressing. The PI composite glue with a specific weight percentage of raw materials is used to ensure that the shaping film is stably attached to the chip of the semiconductor support. The shaping film has stable and reliable adhesion during the use period, and can be completely peeled off when disassembly is needed. The generation of residual glue is minimized or even eliminated. The micro semiconductor film structure has high temperature stability and clean peeling performance, and meets the quality and efficiency requirements of large-scale production of semiconductor devices.
[0027] Preferably, the hot pressing pressure is ≤20 tons.
[0028] By adopting the technical scheme, PI glue is coated on the surface of the film and cured to form a glue layer to obtain a shaped film, and then the glue layer of the shaped film is covered on the semiconductor surface of the micro semiconductor support for hot pressing, the PI composite glue composed of specific weight percentage raw materials is used, the B modifier is an ultrabranched acrylate oligomer and / or acryloyloxy functionalized oligosiloxane, the A modifier contains a polyether type MDI blocked polyurethane prepolymer, and on this basis, the hot pressing pressure is ≤20 tons, the hot pressing can be completed under suitable pressure, the shaped film and the micro semiconductor support can be stably attached, damage to the film and the chip on the semiconductor support caused by excessive pressure can be avoided, and meanwhile, the overall scheme makes the shaped film have stable and reliable adhesion during use, can be cleanly and completely peeled off when disassembly is needed, maximally reduces or even eliminates residual glue, and meets the quality and efficiency requirements of semiconductor device mass production.
[0029] Preferably, the curing temperature in the step 1) is 120-180℃, and the curing time is 5-20min.
[0030] By adopting the technical scheme, PI glue is coated on the surface of the film and cured to form a glue layer to obtain a shaped film, and then the glue layer of the shaped film is covered on the semiconductor surface of the micro semiconductor support for hot pressing, the PI composite glue composed of specific weight percentage raw materials is used, the B modifier is an ultrabranched acrylate oligomer and / or acryloyloxy functionalized oligosiloxane, the A modifier contains a polyether type MDI blocked polyurethane prepolymer, and on this basis, the hot pressing pressure is ≤20 tons, the hot pressing can be completed under suitable pressure, the shaped film and the micro semiconductor support can be stably attached, damage to the film and the chip on the semiconductor support caused by excessive pressure can be avoided, and meanwhile, the overall scheme makes the shaped film have stable and reliable adhesion during use, can be cleanly and completely peeled off when disassembly is needed, maximally reduces or even eliminates residual glue, and meets the quality and efficiency requirements of semiconductor device mass production.
[0031] Preferably, the PI composite glue is obtained by the following method: According to weight percentage, the modifier A and the modifier B are weighed and uniformly mixed to obtain a mixture A; the mixture A and the polyimide are uniformly mixed to obtain a mixture B; the polyvinylamine is added to the mixture B and uniformly mixed to obtain the PI composite glue.
[0032] By adopting the technical scheme, the modifier A and the modifier B are mixed to obtain a mixture A, the mixture A and the polyimide are mixed to obtain a mixture B, and finally, the polyvinylamine is added to the mixture B to obtain the PI composite glue, so that the raw materials can be fully and uniformly mixed, the PI composite glue prepared by the method can ensure that the shaped film has stable and reliable adhesion during the use period, and can realize clean and complete peeling when disassembly is needed, so that the residual glue is reduced to the maximum extent or even eliminated, the micro semiconductor film-covered structure prepared has both high-temperature stability and peeling cleanliness, and meets the quality and efficiency requirements of the large-scale production of semiconductor devices.
[0033] In the second aspect, the micro semiconductor film-covered structure obtained by the forming method for the micro semiconductor film-covered structure is used for integrated packaging of a semiconductor chip, and then the shaped film in the micro semiconductor film-covered structure is torn at 190-220 DEG C.
[0034] By adopting the technical scheme, the PI composite glue with a specific ratio is coated on the surface of the film and solidified to form a glue layer to obtain the shaped film, and then the shaped film is covered on one side of the micro semiconductor support to obtain the micro semiconductor film-covered structure, so that the shaped film has stable and reliable adhesion during the use period; after the film-covered structure is used for integrated packaging of a semiconductor chip, the shaped film can be cleanly and completely torn at 190-220 DEG C, so that the residual glue is reduced to the maximum extent or even eliminated, and the micro semiconductor film-covered structure has both high-temperature stability and peeling cleanliness, and meets the quality and efficiency requirements of the large-scale production of semiconductor devices.
[0035] Further, the tearing strength is ≦0.1 N, and the tearing strength cooperates with the tearing temperature to avoid damage to other components, residual glue after tearing, or the phenomenon that the film cannot be torn.
[0036] In summary, the present application has at least one of the following beneficial technical effects: 1. The PI composite glue with a specific ratio is adopted to optimize the balance of adhesion and cohesion, so that the shaped film is stably adhered during the use period, cleanly peeled during disassembly, and the residual glue is reduced; 2. The viscosity of the glue layer is reduced, the thermal fluidity is improved, and the glass transition temperature is reduced, so that the glue layer has better effect when it is relatively thin; 3. The B modifier can cooperatively solve the problems of "difficult to coat" and "poor wetting of the base material" of the PI glue solution, form a "multiple toughening structure" and a double weather-resistant system, and improve the comprehensive performance of the glue layer; 4. The components in the A modifier are cooperative to ensure stable adhesion with the film, reduce excessive adhesion of the glue layer with the semiconductor, and have high cohesion and strong resistance to extreme environments; 5. A, B modifier and polyethylene imine together, make PI composite glue easy to press after coating, attached, tear off when not easy to produce residual glue, and ensure that the semiconductor film structure takes into account the high temperature stability and stripping cleanliness, meet the quality and efficiency requirements of semiconductor device mass production. BRIEF DESCRIPTION OF DRAWINGS
[0037] Figure 1 Process diagram for a micro semiconductor film structure forming method. DETAILED DESCRIPTION
[0038] The application is further described in detail below in conjunction with the examples.
[0039] Part of the raw material introduction: The effective component content of the polyimide glue solution is 40-70%, the relative molecular weight of the polyimide is 500-1000, and the diluent is DMF; The relative molecular weight of the polyethylene imine is 500-2000; The polyether type MDI capped polyurethane prepolymer is GREAT7122 of GREAT brand; The tertiary carbon glyceryl acrylate is an ACE prepolymer, which is obtained by reacting the active group epoxy group of tertiary carbon glycidyl ester (E-10p) with acrylic acid (AA); the chemical structural formula is as follows, and the acid value is <1.5 mgKOH / g;
[0040] The aliphatic polyurethane di-functional acrylate oligomer is Xinghe US6F of Xinghe brand; The hyperbranched acrylate oligomer is Xinghe UV7-4X of Xinghe brand; The acryloyl oxygen functionalized oligosiloxane is Crosile 7270 of Aikema brand.
[0041] Preparation example of PI composite glue
[0042] Preparation example 1 A kind of PI composite glue is obtained by the following method: According to the weight percentage, 17% of modifier A and 13% of modifier B are mixed uniformly to obtain mixture A; then mixture A and 64% of polyimide solution are mixed uniformly to obtain mixture B; 6% of polyethylene amine is added to mixture B, and mixed uniformly to obtain PI composite glue.
[0043] The B modifier is acryloyl oxygen functionalized oligosiloxane; The A modifier is polyether type MDI capped polyurethane prepolymer.
[0044] Preparation example 2 Preparation Example 2 is different from Preparation Example 1 in that the amounts of raw materials are different, as follows: Polyimide glue solution: 50%; Modifier A: 22%; Modifier B: 18%; Polyvinyl imine: 10% by weight percentage.
[0045] Preparation Example 3 Preparation Example 3 is different from Preparation Example 1 in that the amounts of raw materials are different, as follows: Polyimide glue solution: 78%; Modifier A: 12%; Modifier B: 10%; Polyvinyl imine: 2% by weight percentage.
[0046] Preparation Example 4 Preparation Example 4 is different from Preparation Example 1 in that the B modifier is a hyperbranched acrylate oligomer.
[0047] Preparation Example 5 Preparation Example 5 is different from Preparation Example 1 in that the B modifier is composed of a hyperbranched acrylate oligomer and an acryloxy-functionalized oligosiloxane in a weight ratio of 1:1.
[0048] Preparation Example 6 Preparation Example 6 is different from Preparation Example 1 in that the B modifier is composed of a hyperbranched acrylate oligomer and an acryloxy-functionalized oligosiloxane in a weight ratio of 1:3.
[0049] Preparation Example 7 Preparation Example 7 is different from Preparation Example 5 in that the A modifier is composed of a polyether type MDI-terminated polyurethane prepolymer and a tertiary carbon glyceryl acrylate in a weight ratio of 2:1.
[0050] Preparation Example 8 Preparation Example 8 is different from Preparation Example 5 in that the A modifier is composed of a polyether type MDI-terminated polyurethane prepolymer and an aliphatic polyurethane di-functional acrylate oligomer in a weight ratio of 2:1.
[0051] Preparation Example 9 Preparation Example 9 is different from Preparation 5 in that the A modifier is composed of a polyether type MDI-terminated polyurethane prepolymer, a tertiary carbon glyceryl acrylate, and an aliphatic polyurethane di-functional acrylate oligomer in a weight ratio of 10:1:4.
[0052] Preparation Example 10 Preparation Example 10 is different from Preparation Example 5 in that the A modifier is composed of a polyether type MDI-terminated polyurethane prepolymer, a tertiary carbon glyceryl acrylate, and an aliphatic polyurethane di-functional acrylate oligomer in a weight ratio of 10:2:3. Preparation Example 11 Preparation Example 11 is different from Preparation Example 5 in that the A modifier is composed of polyether type MDI end-capped polyurethane prepolymer, tertiary carbon glyceryl acrylate, aliphatic polyurethane di-functional acrylate oligomer in a weight ratio of 10:3:2.
[0053] Preparation Comparative Example
[0054] Preparation Comparative Example 1 Preparation Comparative Example 1 is different from Preparation Example 1 in that the modifier B is replaced by the same amount of modifier A.
[0055] Preparation Comparative Example 2 Preparation Comparative Example 2 is different from Preparation Example 1 in that the modifier A is replaced by the same amount of modifier B.
[0056] Preparation Comparative Example 3 Preparation Comparative Example 3 is different from Preparation Example 1 in that both the polyvinyl imine and the modifier A are replaced by the same amount of modifier B. Example
[0057] Example 1 A forming method for a micro semiconductor film structure, comprising the following steps: Step 1): The surface of a thin film with a thickness of 20 μm is coated with the PI glue obtained in Preparation Example 1, the first stage curing temperature is 150°C, the curing time is 5 min, the second stage curing temperature is 185°C, and the curing time is 10 min, forming a glue layer with a thickness of 1 μm on the surface of the thin film, obtaining a shaped film.
[0058] Step 2): The glue layer of the shaped film is covered on one side of a micro semiconductor support (micro semiconductor PPF nickel bar gold support), and then hot pressing is performed, obtaining a micro semiconductor film structure, and the process of film coating can refer to Figure 1 .
[0059] The thin film is a PI film, the hot pressing pressure in step 2 is 20 tons, the hot pressing temperature is 240°C, and the hot pressing time is 20 seconds.
[0060] Examples 4-11 Examples 4-11 are different from Example 2 in that the sources of the PI composite glue are different, as shown in Table 1. Table 1 Sources of PI composite glue for Examples 1-11
[0061] Comparative Example
[0062] Comparative Example 1 Comparative Example 1 is different from Example 2 in that the PI composite glue is a polyimide glue solution.
[0063] Comparative Example 2 Comparative Example 2 differs from Example 2 in that the PI complex adhesive prepared in Comparative Example 1 is used.
[0064] Comparative Example 3 Comparative Example 3 differs from Example 2 in that the PI complex adhesive prepared in Comparative Example 2 is used.
[0065] Comparative Example 4 Comparative Example 4 differs from Example 2 in that the PI complex adhesive prepared in Comparative Example 2 is used.
[0066] Application Example
[0067] An application of the micro semiconductor film structure is to use the micro semiconductor film structure obtained in Examples 1-11 and Comparative Examples 1-4 for integrated packaging of semiconductor chips, and then tear the shaped film in the micro semiconductor film structure at 200°C. The micro semiconductor film structure is shown in Fig. 1. Figure 1
[0068] Experimental Test
[0069] Test 1: The micro semiconductor film structure obtained in Examples 1-11 and Comparative Examples 4 is tested according to IPC-TM-650 2.4.9, the test speed is 100 mm / min, the sample is fixed to ensure a 90° peeling angle, and the peeling force test is qualified when the peeling force is within 100-150 g.
[0070] Test 2: Residual Adhesive Rate 1) The micro semiconductor film structure obtained in Examples 1-11 and Comparative Examples 4 is cut into 68.5 mm*240 mm to obtain a test sample, the side of the sample away from the shaped film is fixed on the test bench, a 1 mm deep opening is cut along the width with a knife, the shaped film at the opening is fixed, then the shaped film is torn along the length direction with a force of 0.1 N at a speed of 100 mm / min, the direction of the tearing force is perpendicular to the horizontal placement of the micro semiconductor film structure, and the effective tearing area A (68.5 mm*240 mm-1 mm*1 mm, note that the 1 mm opening cut is not counted as the effective area) is recorded. It should be noted that if the shaped film is detached, loose or deviated during the opening or during the heating process, or the residual adhesive rate is ≧0.01%, it is recorded as unqualified residual adhesive rate, and when the residual adhesive rate is <0.01%, it is recorded as <0.01%.
[0071] 2) The micro semiconductor film structure obtained in Example 1-11 and Comparative Example 4 is cut into 68.5mm*240mm, heated at 150℃, 60% humidity for 30min, and then placed in an oven at 250℃, 60% humidity for continuous heating, to simulate the temperature in the packaging process, to obtain a test sample. The sample is fixed on the experimental table with the side away from the setting film, and a 1mm deep opening is cut along the width with a knife. Then the setting film at the opening is fixed, and then torn along the length direction with a force of 0.1N at a speed of 100mm / min. The tearing direction is perpendicular to the horizontal placement of the micro semiconductor film structure. The effective tearing area A (68.5mm*240mm-1mm*1mm, note that the 1mm opening cut is not counted as the effective area) is recorded. It should be noted that if the setting film is detached or loose during the opening or heating process, it is recorded as unqualified.
[0072] After tearing, infrared scanning is used, and a 70x magnifying lens is used for observation. The area of the residual glue appearing in the effective tearing area A on the surface is counted, and the total residual glue area B is recorded. Then the residual glue rate is calculated, which is equal to the total residual glue area B divided by the effective tearing area A, multiplied by 100%. When the residual glue rate is <0.010%, it is recorded as residual glue rate <0.010%.
[0073] Test 3: The micro semiconductor film structure (68.5mm*240mm) obtained in Example 1-11 and Comparative Example 4 is placed vertically in an oven (the length direction is perpendicular to the horizontal plane) at 265℃, 60% humidity for 30h. No loose, detachment, bulging, wrinkling, etc. of the setting film is observed. If there is no above situation, it is recorded as qualified.
[0074] The above experimental data is shown in Table 1. Table 2 Experimental data of Example 1-11 and Comparative Example 1-4
[0075] As can be seen from Example 1 and Comparative Example 1-4 and Table 2, the peeling force and high temperature stability of Comparative Example 1-4 are unqualified. After simulating the integrated packaging conditions of the semiconductor chip, the residual glue rate of Comparative Example 1 is much higher than that of Example 1, which shows that the PI composite glue obtained by using polyimide glue solution, modifier A, modifier B and polyvinyl imine can form a stable adhesive layer after curing. During hot pressing, it can adhere stably on the semiconductor support, and easily detach during hot disassembly. It can also have certain adhesion in a continuous high temperature environment to avoid phenomena such as detachment, bulging and wrinkling.
[0076] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.
Claims
1. A molding method for a micro semiconductor film structure, characterized by, The method comprises the following steps: Step 1): coating PI glue on the surface of the film, curing, forming a glue layer on the surface of the film, and obtaining a shaped film; Step 2): covering the glue layer of the shaped film on one side of the micro semiconductor support, and then performing hot pressing to obtain a micro semiconductor film-covered structure; The PI composite glue is composed of the following raw materials in percentage by weight: Polyimide glue solution: 50-78%; Modifier A: 10-22%; Modifier B: 10-18%; Polyvinyl imine: 2-10%; The B modifier is a combination of hyperbranched acrylate oligomer and / or acryloyloxy functionalized oligosiloxane; The A modifier is a combination of one or more of polyether type MDI capped polyurethane prepolymer, tertiary carbon glycerol acrylate, and aliphatic polyurethane di-functional acrylate oligomer, wherein at least one is polyether type MDI capped polyurethane prepolymer.
2. The method of claim 1, wherein the method is used for forming a micro semiconductor film structure. The B modifier is composed of hyperbranched acrylate oligomer and acryloyloxy functionalized oligosiloxane in a weight ratio of 1: (1-3).
3. The method for forming a micro-semiconductor coating structure according to claim 1, characterized in that: The A modifier is composed of polyether type MDI capped polyurethane prepolymer, tertiary carbon glycerol acrylate, and aliphatic polyurethane di-functional acrylate oligomer in a weight ratio of 10: (1-3): (2-4).
4. The method of claim 1, wherein the method is used for forming a micro semiconductor film structure. The film is a PI film.
5. The method of claim 1, wherein the method is used for forming a micro semiconductor film structure. The thickness of the film is ≤30 μm.
6. The method of claim 1, wherein the method is used for forming a micro semiconductor film structure. The thickness of the glue layer is ≤1 μm.
7. The method of claim 1, wherein the method is used for forming a micro semiconductor film structure. The hot pressing pressure is ≤20 tons.
8. The method for forming a micro-semiconductor coating structure according to claim 1, characterized in that: The curing temperature in step 1) is 120-180℃, and the curing time is 5-20 min.
9. The method for forming a micro-semiconductor coating structure according to claim 1, characterized in that: The PI composite glue is obtained by the following method: According to the percentage by weight, modifier A and modifier B are mixed uniformly to obtain mixture A; then mixture A and polyimide are fully mixed uniformly to obtain mixture B; polyvinyl amine is added to mixture B and fully mixed uniformly to obtain PI composite glue.
10. Use of a micro semiconductor film structure, characterized by: The micro semiconductor film-covered structure obtained by the forming method of any one of claims 1-9 is used for integrated packaging of semiconductor chips, and then the shaped film in the micro semiconductor film-covered structure is torn off at 190-220℃.