Method and system for measuring thickness of film layer on base material

Abstract

The invention discloses a method and system for measuring the thickness of a film layer on a base material, and the method comprises the steps: providing a base material which is provided with a film layer; a probe module is provided and placed on the base material, the probe module comprises a multi-layer laminated coil, the multi-layer laminated coil comprises a plurality of coils which are coaxially arranged at intervals, and the lift-off distances between the coils and the base material are different; introducing current into each coil in sequence, and measuring the voltage of all the coils; obtaining a standard curve of the relationship between the voltage and the lift-off distance; providing another base material, wherein a film layer is arranged on the base material; a probe module is placed on the film layer, and a preset distance is kept between the probe module and the film layer; introducing current into a preset coil in the probe module, and measuring the voltage of the preset coil to obtain a measured voltage; and obtaining the thickness of the film layer according to the standard curve, the measurement voltage and the preset distance. According to the measurement method and the measurement system provided by the invention, the accuracy and the consistency of measurement results can be improved.

Description

Technical Field

[0001] This invention relates to the field of nuclear fuel rod oxide film detection technology, and in particular to a method and system for measuring the thickness of a film layer on a substrate. Background Technology

[0002] Zirconium-based cladding, serving as the first pressure boundary and safety barrier in nuclear power plants, is used to encapsulate and seal nuclear fuel. While dissipating heat, it also effectively prevents the escape of nuclear fission products and avoids cooling corrosion of the fuel. However, due to the effects of strong neutron radiation, high pressure, high temperature, and high-flow-rate circulating water, an oxide film accumulates on the surface of the zirconium-based cladding. This affects the thermal conductivity of the cladding, accelerates the corrosion rate of the nuclear fuel, and poses potential safety risks. Therefore, it is essential to measure the thickness of the oxide film on the zirconium-based cladding surface to determine its surface condition and thus assess the risk status of the nuclear fuel. However, current measurement methods suffer from low accuracy, poor consistency, and cumbersome procedures. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide a method and system for measuring the thickness of a film layer on a substrate, which can accurately quantify the thickness of the film layer, improve the accuracy and consistency of the measurement results, and eliminate the need for an additional calibration process, thereby simplifying the measurement process.

[0004] To solve the above-mentioned technical problems, the present invention is achieved through the following technical solution.

[0005] This invention provides a method for measuring the thickness of a film layer on a substrate, comprising at least the following steps:

[0006] Provide a base material;

[0007] A probe module is provided and placed on the substrate. The probe module includes a multi-layer stacked coil, which includes multiple coils arranged coaxially at intervals. The lift-off distance between each coil and the substrate is different.

[0008] Current is sequentially passed through the coils, the voltage of each coil is measured, multiple voltages are obtained, and the probe module is removed from the substrate;

[0009] Obtain a standard curve showing the relationship between the voltage and the lift-off distance;

[0010] Provide another substrate on which a film layer is disposed;

[0011] The probe module is placed on the membrane layer, and a preset distance is maintained between the probe module and the membrane layer;

[0012] A current is passed through a preset coil in the probe module, and the voltage of the preset coil is measured to obtain the measured voltage; and

[0013] The thickness of the film layer is obtained based on the standard curve, the measured voltage, and the preset spacing.

[0014] In one embodiment of the present invention, the step of obtaining the plurality of said voltages includes at least:

[0015] A current is passed through a preset coil in the multilayer array coil, and the voltage of the preset coil is measured.

[0016] By changing the preset coil, repeating the steps of applying current and measuring voltage, until the voltage of all the coils is measured; and

[0017] Multiple voltages are obtained.

[0018] In one embodiment of the present invention, the step of obtaining the standard curve includes at least:

[0019] Based on the voltage, the voltage amplitude and voltage phase are obtained;

[0020] Obtain a first standard curve showing the relationship between the voltage amplitude and the spacing; and

[0021] A second standard curve relating the voltage phase to the spacing is obtained.

[0022] In one embodiment of the present invention, the multilayer stacked coil is obtained through at least the following steps:

[0023] Provide a substrate;

[0024] An insulating layer and a conductive layer are sequentially formed on the substrate;

[0025] A photoresist layer is formed on the conductive layer, and the conductive layer is etched using the photoresist layer as a mask.

[0026] The steps of forming the insulating layer, forming the conductive layer, and etching the conductive layer are repeated on the etched conductive layer to obtain multiple layers of the insulating layer and multiple layers of the conductive layer; and

[0027] The substrate is cut to obtain a stack of multiple insulating layers and multiple conductive layers.

[0028] The present invention also proposes a system for measuring the thickness of a film layer on a substrate, comprising at least:

[0029] A probe module is mounted on a substrate. The probe module includes a multi-layer stacked coil, which includes multiple coils arranged coaxially.

[0030] The frequency sweep control unit module is electrically connected to the probe module;

[0031] The signal acquisition module is electrically connected to the probe module; and

[0032] The signal quantization evaluation module is electrically connected to the frequency sweep control unit module and the signal acquisition module.

[0033] In one embodiment of the present invention, the coil includes a conductive layer and an insulating layer, wherein the conductive layer is disposed on the insulating layer.

[0034] In one embodiment of the present invention, for two adjacent coils, the conductive layer in one coil and the insulating layer in the other coil are in contact.

[0035] In one embodiment of the present invention, the multilayer array coil further includes a common ground hole, which sequentially passes through a plurality of the coils.

[0036] In one embodiment of the present invention, the multilayer array coil further includes multiple ports, each port passing through multiple coils, and each port is provided with at least two leads, wherein one end of the leads in different ports is electrically connected to the conductive layer in different coils.

[0037] In one embodiment of the present invention, at least one of the leads, at one end away from the conductive layer, is electrically connected to the frequency sweep control unit module in the same port, and at least one of the leads, at one end away from the conductive layer, is electrically connected to the signal acquisition module.

[0038] In summary, this invention provides a method and system for measuring film thickness on a substrate. By reducing the size of the detection unit, it achieves high-precision acquisition of multi-position electromagnetic signals at the micrometer scale. Combined with swept-frequency eddy current detection technology, it accurately measures film thickness, avoiding interference from the external environment and improving the accuracy and consistency of the measurement results. Furthermore, the method for measuring film thickness on a substrate provided by this invention does not require an additional calibration process, thus simplifying the measurement process and making it suitable for large-scale application.

[0039] Of course, implementing any of the methods of this invention does not necessarily require achieving all of the advantages described above at the same time. Attached Figure Description

[0040] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of a film thickness measurement system on a substrate according to an embodiment of the present invention.

[0042] Figure 2 This is a schematic diagram of the formation of a stress layer on a substrate.

[0043] Figure 3 This is a schematic diagram of the formation of an insulating layer.

[0044] Figure 4 This is a schematic diagram of the formation of a conductive layer.

[0045] Figure 5 This is a schematic diagram of the formation of a photoresist layer.

[0046] Figure 6 This is a schematic diagram of etching the conductive layer.

[0047] Figure 7 This is a schematic diagram of forming multiple coils.

[0048] Figure 8 A schematic diagram for forming a common ground hole.

[0049] Figure 9 A schematic diagram for forming a multi-layered array of coils.

[0050] Figure 10 for Figure 9 A top view of a multi-layered array of coils.

[0051] Figure 11 This is a flowchart of a method for measuring the film thickness on a substrate according to an embodiment of the present invention.

[0052] Figure 12 This is a schematic diagram of the voltage amplitude of different coils in one embodiment of the present invention.

[0053] Figure 13 This is a schematic diagram of the voltage phase of different coils in one embodiment of the present invention.

[0054] Figure 14 This is a schematic diagram illustrating the relationship between voltage amplitude and spacing in one embodiment of the present invention.

[0055] Figure 15 This is a schematic diagram illustrating the relationship between voltage phase and spacing in one embodiment of the present invention.

[0056] Figure 16 This is a schematic diagram illustrating the relationship between voltage amplitude and excitation frequency in one embodiment of the present invention.

[0057] Figure 17 This is a schematic diagram of a three-dimensional impedance matrix in one embodiment of the present invention.

[0058] Label Explanation:

[0059] 100. Probe module; 101. Multilayer array coil; 1011. Coil; 1012. Insulating layer; 1013. Conductive layer; 102. Common ground hole; 103. Port; 1031. First port; 1032. Second port; 1033. Third port; 1034. Fourth port; 104. Housing; 105. Filler material; 200. Sweep frequency control unit module; 300. Signal acquisition module; 400. Signal quantization evaluation module; 500. Zirconium-based cladding; 501. Coating; 502. Oxide film layer; 600. Substrate; 601. Stress layer; 602. Photoresist layer. Detailed Implementation

[0060] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0061] It should be understood that the invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0062] The technical solution of the present invention will be further described in detail below with reference to the embodiments and accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0063] While an oxide film layer accumulates on the surface of a zirconium-based cladding, scale and hydrogen-absorbing layers also adhere to it, significantly affecting the measurement accuracy of the oxide film layer. Furthermore, the measurement of oxide film thickness typically requires calibration of the probe module using known film samples of varying thicknesses, making the measurement system heavily reliant on the calibration samples. This results in poor adaptability to environmental conditions, and the test results are significantly influenced by external factors such as the testing method, calibration process, and component deformation, leading to poor consistency and insignificant characterization at the micrometer scale. Therefore, this invention provides a method and system for measuring film thickness on a substrate. By reducing the size of the detection unit, high-precision acquisition of multi-position electromagnetic signals at the micrometer scale is achieved. Combined with swept-frequency eddy current detection technology, accurate film thickness measurement is performed without the need for a calibration probe module, avoiding interference from the external environment, thereby improving the accuracy and consistency of the measurement results and simplifying the measurement process.

[0064] Please see Figure 1 As shown, this invention provides a system for measuring the thickness of a film layer on a substrate, including, for example, a probe module 100, a sweep frequency control unit module 200, a signal acquisition module 300, and a signal quantization evaluation module 400. The probe module 100 includes a multi-layer stacked coil 101, which comprises multiple coils 1011 coaxially arranged. The sweep frequency control unit module 200 and the signal acquisition module 300 are each electrically connected to the probe module 100. The signal quantization evaluation module 400 is electrically connected to both the sweep frequency control unit module 200 and the signal acquisition module 300. In the film layer thickness measurement system provided by this invention, by controlling the sweep frequency control unit module 200 to supply current to the coils 1011, the signal acquisition module 300 measures the voltage of the coils 1011, and the signal quantization evaluation module 400 receives the current signal from the sweep frequency control unit module 200 and the voltage signal from the signal acquisition module 300, performs data processing, and obtains the film thickness. Therefore, the measurement system provided by the present invention can accurately quantify the thickness of the film layer without calibrating the probe module 100, avoiding interference from the external environment, thereby improving the accuracy and consistency of the measurement results.

[0065] Please see Figure 1As shown, the substrate film thickness measurement system provided by the present invention can be used to detect various film thicknesses. In this embodiment, the measurement system is described for example, by detecting the thickness of the oxide film 502 on a zirconium-based cladding 500. Specifically, the zirconium-based cladding 500 includes, for example, a coating 501 and an oxide film 502. The coating 501 is disposed on the surface of the zirconium-based cladding 500, and the material of the coating 501 includes at least one of metal and insulating materials to improve the corrosion resistance of the zirconium-based cladding 500. The oxide film 502 is formed on the coating 501, for example, due to strong neutron radiation, high pressure, high temperature, and high-flow-rate circulating water. The presence of the oxide film 502 not only affects the thermal conductivity of the zirconium-based cladding 500 but also accelerates the corrosion rate of nuclear fuel rods, posing a potential safety risk to the nuclear fuel rods. Therefore, it is necessary to measure the thickness of the oxide film 502 to determine the state of the oxide film 502 on the surface of the zirconium-based cladding 500, and then assess the risk status of the nuclear fuel rods.

[0066] Please see Figure 1 As shown, in one embodiment of the present invention, the probe module 100 is disposed on a zirconium-based cladding 500. In this embodiment, the probe module 100 includes, for example, a multilayer array coil 101, a housing 104, and a filling material 105. The housing 104 is hollow, and its material includes at least one metal such as iron and copper. The multilayer array coil 101 is disposed within the housing 104. By providing the housing 104, interference from the external environment on the multilayer array coil 101 can be shielded, improving the measurement accuracy of the probe module 100. In this embodiment, the filling material 105 is filled between the multilayer array coil 101 and the inner wall of the housing 104 to fix the multilayer array coil 101 and prevent it from moving. The material of the filling material 105 includes at least one of polyurethane potting compound, silicone potting compound, and epoxy resin potting compound.

[0067] Please see Figure 1 and Figure 10 As shown, in one embodiment of the present invention, the multilayer array coil 101 includes, for example, coils 1011, a common ground hole 102, and a port 103. Multiple coils 1011 are arranged coaxially. In this embodiment, four coils 1011 are defined sequentially as a first layer coil C1, a second layer coil C2, a third layer coil C3, and a fourth layer coil C4, pointing from the zirconium-based cladding 500 towards the probe module 100. The distance between adjacent layers of coils 1011 can be equal or unequal. In this embodiment, adjacent layers of coils 1011 are, for example, equidistant, and the distance is, for example, λ, which is, for example, 5 micrometers to 10 micrometers.

[0068] Please see Figure 1 and Figure 9 As shown, in this embodiment, the coil 1011 includes, for example, an insulating layer 1012 and a conductive layer 1013. The conductive layer 1013 is disposed on the insulating layer 1012. In a direction perpendicular to the axis of the coil 1011, the shape of the conductive layer 1013 is, for example, a polygon, an ellipse, or a circle. In this embodiment, the shape of the conductive layer 1013 is, for example, rectangular, with a length of, for example, 20μm-30μm and a width of, for example, 0.5μm-1μm. The material of the insulating layer 1012 includes, for example, at least one of epoxy resin, polyurethane, polystyrene, polypropylene, polytetrafluoroethylene, and polyimide, and the thickness of the insulating layer 1012 is, for example, 5μm-15μm. The material of the conductive layer 1013 includes, for example, at least one of copper, aluminum, and silver, and the thickness of the conductive layer 1013 is, for example, 0.5μm-2μm.

[0069] Please see Figure 1 , Figure 9 and Figure 10 As shown, in one embodiment of the present invention, a common ground hole 102 sequentially passes through four coils 1011. The present invention does not limit the specific position of the common ground hole 102 in the coils 1011, and it can be selected according to actual needs. In this embodiment, the common ground hole 102 is, for example, located at the center of the coils 1011 to achieve a common ground for the multi-layer stacked coils 101.

[0070] Please see Figure 1 , Figure 9 and Figure 10As shown, in one embodiment of the present invention, ports 103 sequentially pass through multiple coils 1011, and the number of ports 103 is the same as the number of coils 1011. The shape and position of the ports 103 can be selected according to actual needs. In this embodiment, for example, there are four coils 1011 and four ports 103, which are, for example, a first port 1031, a second port 1032, a third port 1033, and a fourth port 1034. The four ports 103 are equidistantly distributed around a common ground hole 102 to facilitate the arrangement of electrical connection lines between the four ports 103 and the sweep frequency control unit module 200 and the signal acquisition module 300. Furthermore, each port 103 has at least two leads, and in different ports 103, one end of each lead is electrically connected to a conductive layer 1013 in a different coil 1011. Specifically, in this embodiment, each port 103 is provided with, for example, two leads. In the first port 1031, one end of each of the two leads is electrically connected to the conductive layer 1013 in the first coil C1. In the second port 1032, one end of each of the two leads is electrically connected to the conductive layer 1013 in the second coil C2, and so on. Further details are omitted here. By providing ports 103 and leads, the frequency sweep control unit module 200 and the signal acquisition module 300 are electrically connected to the conductive layer 1013 in different coils 1011, facilitating the flow of current into different coils 1011 and the measurement of voltage in different coils 1011.

[0071] Please see Figure 1 , Figure 9 and Figure 10 As shown, in one embodiment of the present invention, the sweep frequency control unit module 200 is electrically connected to the probe module 100. Specifically, for the same port 103, at least one lead is electrically connected to the sweep frequency control unit module 200 at one end away from the conductive layer 1013. In this embodiment, for the same port 103, for example, one lead is electrically connected to the sweep frequency control unit module 200 at one end away from the conductive layer 1013. By electrically connecting the conductive layer 1013 in each port 103 to the sweep frequency control unit module 200 via leads, current can be passed into a specific coil 1011. Specifically, via leads, in the first port 1031, the conductive layer 1013 of the first coil C1 is electrically connected to the sweep frequency control unit module 200 to allow current to flow into the first coil C1. Similarly, in the second port 1032, the conductive layer 1013 of the second coil C2 is electrically connected to the sweep frequency control unit module 200 to allow current to flow into the second coil C2, and so on. This will not be elaborated further here. Furthermore, the sweep frequency control unit module 200 can change the excitation frequency of the current flowing into coil 1011. Please refer to [link / reference]. Figure 16As shown, the higher the excitation frequency, the more obvious the voltage change trend of coil 1011. Therefore, by increasing the excitation frequency of the current through the frequency sweep control unit module 200, the voltage change trend becomes more obvious, thereby improving the accuracy of subsequent fitting of voltage and spacing data, reducing fitting deviation, and thus improving the measurement accuracy of film thickness.

[0072] Please see Figure 1 , Figure 9 and Figure 10 As shown, in one embodiment of the present invention, the signal acquisition module 300 is electrically connected to the probe module 100. Specifically, for the same port 103, at least one lead is electrically connected to the signal acquisition module 300 at one end away from the conductive layer 1013. In this embodiment, for the same port 103, for example, one lead is electrically connected to the signal acquisition module 300 at one end away from the conductive layer 1013. The conductive layer 1013 in each port 103 is electrically connected to the signal acquisition module 300 via leads to measure the voltage of the coil 1011. Specifically, via leads, in the first port 1031, the conductive layer 1013 in the first coil C1 is electrically connected to the signal acquisition module 300 to measure the voltage in the first coil C1; in the second port 1032, the conductive layer 1013 in the second coil C2 is electrically connected to the signal acquisition module 300 to measure the voltage in the second coil C2, and so on. Further details are omitted here.

[0073] Please see Figure 1 As shown, in one embodiment of the present invention, the signal quantization evaluation module 400 is electrically connected to the signal acquisition module 300 and the frequency sweep control unit module 200 to collect the current signal from the frequency sweep control unit module 200 and the voltage signal from the signal acquisition module 300, and perform data processing to obtain the thickness of the oxide film layer 502. The data processing procedure of the signal quantization evaluation module 400 is detailed in the following method for measuring the film thickness on a substrate, and will not be elaborated upon here.

[0074] Please see Figure 1 , Figure 2 and Figure 9As shown, based on the aforementioned multilayer array coil 101, the present invention also provides a method for fabricating the multilayer array coil 101, for example, by using semiconductor micro-nano fabrication technology to fabricate the multilayer array coil 101. Semiconductor micro-nano fabrication technology can reduce the spacing between the coils 101, and by reducing the size of the detection unit, achieve high-precision pickup of multi-position electromagnetic signals at the micrometer scale, thereby improving the measurement accuracy of the multilayer array coil 101. Specifically, a substrate 600 is first provided. The substrate 600 is made of materials such as silicon carbide, gallium nitride, aluminum nitride, indium nitride, indium phosphide, gallium arsenide, silicon germanium, sapphire, silicon wafers, or other III / V compounds, and also includes a stacked structure composed of these materials, or silicon-on-insulator, silicon-on-insulator, silicon-germanium-on-insulator, and germanium-on-insulator. Furthermore, the present invention does not limit the thickness of the substrate 600. In this embodiment, a silicon wafer substrate 600 with a thickness of, for example, 500 μm, is used as an example to illustrate the fabrication method of the multilayer array coil 101. Furthermore, before preparation, the substrate 600 needs to be cleaned to remove impurities such as organic matter from its surface, facilitating a tighter adhesion between the subsequently formed stress layer 601 and the surface of the substrate 600. In this embodiment, the method for cleaning the substrate 600 is, for example, to first ultrasonically treat the substrate 600 with a reagent for a preset time, then heat the substrate 600 to a preset temperature and hold it at that temperature, and finally dry the substrate 600. The reagent may include, for example, at least one of acetone, ethanol, and methanol; the preset time may be, for example, 3-5 minutes; the preset temperature may be, for example, 150°C-200°C; and the holding time may be, for example, 1-10 minutes.

[0075] Please see Figure 2 As shown, in one embodiment of the present invention, after cleaning the substrate 600, a stress layer 601 is formed on the substrate 600. The material of the stress layer 601 includes, for example, polymethyl methacrylate. The present invention does not limit the formation method and thickness of the stress layer 601, and can be selected according to actual needs. For example, the stress layer 601 can be formed by methods such as liquid phase epitaxy, molecular beam epitaxy, chemical vapor deposition, spin coating, or evaporation growth. In this embodiment, for example, the stress layer 601 is applied to the substrate 600 by spin coating, and then the stress layer 601 is dried. The thickness of the stress layer 601 is, for example, 0.3 μm-0.9 μm. By setting the stress layer 601, the stress generated during the fabrication of the multilayer array coil 101 is released, preventing the subsequently formed insulating layer 1012 and conductive layer 1013 from curling due to stress, thereby improving the quality of the multilayer array coil 101.

[0076] Please see Figures 2 to 3As shown, in one embodiment of the present invention, after forming the stress layer 601, an insulating layer 1012 is formed on the stress layer 601. The present invention does not limit the material, thickness, and formation method of the insulating layer 1012, and can be selected according to actual needs. For example, the insulating layer 1012 can be formed by methods such as liquid phase epitaxy, molecular beam epitaxy, chemical vapor deposition, spin coating, or evaporation growth. In this embodiment, for example, the insulating layer 1012 is formed on the stress layer 601 by spin coating, and then the insulating layer 1012 is dried. The material of the insulating layer 1012 includes, for example, at least one of epoxy resin, polyurethane, polystyrene, polypropylene, polytetrafluoroethylene, and polyimide, and the thickness of the insulating layer 1012 is, for example, 5 μm-15 μm.

[0077] Please see Figures 3 to 4 As shown, in one embodiment of the present invention, after forming an insulating layer 1012, a conductive layer 1013 is formed on the insulating layer 1012. The present invention does not limit the material, thickness, and formation method of the insulating layer 1012, and can be selected according to actual needs. For example, the conductive layer 1013 can be formed by physical vapor deposition or chemical vapor deposition. In this embodiment, the conductive layer 1013 is formed, for example, by magnetron sputtering deposition. The material of the conductive layer 1013 includes at least one of copper, aluminum, and silver, and the thickness of the conductive layer 1013 is, for example, 0.5 μm-2 μm.

[0078] Please see Figures 4 to 5 As shown, in one embodiment of the present invention, after forming the conductive layer 1013, a photoresist layer is formed on the conductive layer 1013. The photoresist layer is patterned through processes such as exposure and development to form a photoresist layer 602, which exposes a portion of the conductive layer 1013. The thickness of the photoresist layer is, for example, 1μm-1.5μm, and the photoresist type is, for example, AZ5214, AZ4620, or AZ1500 (sold by Anzhi Electronic Materials Co., Ltd.), etc. The exposure dose is, for example, 50mJ / cm². 2 -100mJ / cm 2 The developer can be, for example, AZ300mif or AZ400K (sold by Anzhi Electronic Materials Co., Ltd.), and the development time is, for example, 30s-60s. Further, after development, the photoresist layer is heated to the curing temperature and held at that temperature, then dried to obtain the cured photoresist layer 602. The curing temperature is, for example, 100℃-150℃, and the holding time is, for example, 2min-10min.

[0079] Please see Figures 5 to 6As shown, in one embodiment of the present invention, the exposed conductive layer 1013 is etched using the photoresist layer 602 as a mask. The etching method may be, for example, dry etching or wet etching. In this embodiment, the conductive layer 1013 is etched using a wet etching method. Specifically, the substrate 600 with the photoresist layer 602 is placed in a wet etching tank, and then an etching solution is added. The etching solution reacts with the exposed conductive layer 1013 to remove the exposed conductive layer 1013. After etching, the surface of the substrate 600 is rinsed with deionized water to remove surface liquid. Then, for example, the moisture on the surface of the substrate 600 is removed by centrifugation, and the substrate 600 is dried, and the photoresist layer 602 is removed. The etching solution may include, for example, acidic copper chloride, alkaline copper chloride, ferric chloride, ammonium persulfate, sulfuric acid / chromic acid, or sulfuric acid / hydrogen peroxide etching solution.

[0080] Please see Figures 6 to 7 As shown, in one embodiment of the present invention, after etching the conductive layer 1013, a coil 1011 is formed. The coil 1011 includes an insulating layer 1012 and the etched conductive layer 1013. Then, the above steps are repeated on the conductive layer 1013, continuing to form the insulating layer 1012, the conductive layer 1013, and etch the conductive layer 1013 to form multiple coils 1011, which will not be elaborated further here. Specifically, for two adjacent coils 1011, the conductive layer 1013 in one coil 1011 and the insulating layer 1012 in the other coil 1011 are in contact.

[0081] Please see Figure 7 , Figure 8 and Figure 10 As shown, in one embodiment of the present invention, after forming multiple coils 1011, holes are drilled in the multiple coils 1011 to form a common ground hole 102 and multiple ports 103. The common ground hole 102 sequentially passes through the multiple coils 1011, and each port 103 sequentially passes through the multiple coils 1011. The present invention does not limit the method of forming the common ground hole 102 and ports 103, nor the position of the common ground hole 102 and ports 103 in the coils 1011; these can be selected according to actual needs. In this embodiment, for example, the common ground hole 102 and ports 103 are formed by laser drilling. The common ground hole 102 is located at the center of the coil 1011, and for example, there are four ports 103, which are arranged equidistantly around the common ground hole 102.

[0082] Please see Figures 8 to 10 As shown, in one embodiment of the present invention, after forming the common ground hole 102 and the port 103, the substrate 600 is peeled off to obtain the stress layer 601, multiple coils 1011, and the common ground hole 102. The method for peeling off the substrate 600 includes, for example, chemical peeling, laser cutting, or wet etching. Please refer to [link to relevant documentation]. Figure 9As shown, after cutting the substrate 600, the stress layer 601 is removed. This invention does not limit the method for removing the stress layer 601; for example, a resist remover can be used. In this embodiment, the resist remover may include, for example, AZ400T solution or AZ100 solution (sold by Anzhi Electronic Materials Co., Ltd.). After removing the stress layer 601, conductive adhesive is coated inside the common ground via 102 to obtain a multilayer stacked coil 101. Then, for example, a packaging technology such as wire bonding is used to connect the multilayer stacked coil 101 to an external circuit.

[0083] Please see Figure 11 As shown, based on the above-described film thickness measurement system on a substrate, the present invention also provides a method for measuring film thickness on a substrate, the method including, for example, steps S11-S17.

[0084] Step S11: Provide a substrate.

[0085] Step S12: Provide a probe module. The probe module is placed on a substrate. The probe module includes a multi-layer stacked coil. The multi-layer stacked coil includes multiple coils arranged coaxially at intervals. The lift-off distance between each coil and the substrate is different.

[0086] Step S13: Pass current through the coils sequentially, measure the voltage of each coil, obtain multiple voltages, and remove the probe module from the substrate.

[0087] Step S14: Obtain the standard curve of the relationship between voltage and lift-off distance.

[0088] Step S15: Provide another substrate, on which a film layer is disposed.

[0089] Step S16: Place the probe module on the membrane layer, maintaining a preset distance between the probe module and the membrane layer.

[0090] Step S17: Pass current through the preset coil in the probe module, measure the voltage of the preset coil, and obtain the measured voltage.

[0091] Step S18: Obtain the thickness of the film layer based on the standard curve, measurement voltage, and preset spacing.

[0092] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, in step S11, the substrate is, for example, a zirconium-based cladding 500.

[0093] Please see Figure 1 and Figure 11As shown, in one embodiment of the present invention, in step S12, the probe module 100 is placed close to the surface of the zirconium-based cladding 500. The probe module 100 includes a multi-layer array coil 101, a shell 104, and a filling material 105, etc., which will not be described in detail here. In this embodiment, the multi-layer array coil 101 includes multiple coils 1011 arranged coaxially at intervals. For example, there are four coils 1011, with a first layer coil C1, a second layer coil C2, a third layer coil C3, and a fourth layer coil C4 arranged sequentially. The first layer coil C1 is placed close to the surface of the zirconium-based cladding 500. The distance between adjacent layers of coils 1011 is, for example, equidistant, and the distance is, for example, λ. The lift-off distance (spacing) between each coil 1011 and the zirconium-based cladding 500 is different, and the lift-off distance of each coil 1011 can be accurately calculated based on the spacing between the coils 1011 and the thickness of the insulating layer 1012 and the conductive layer 1013 in the coil 1011. In this embodiment, the lift-off distance of the first layer coil C1 is approximated as 0, the lift-off distance of the second layer coil C2 is approximated as λ, the lift-off distance of the third layer coil C2 is approximated as 2λ, and the lift-off distance of the fourth layer coil C2 is approximated as 3λ, to facilitate subsequent fitting calculations.

[0094] Please see Figure 1 , Figures 9 to 11 As shown, in one embodiment of the present invention, after obtaining the zirconium-based cladding 500 and the probe module 100, in step S13, the probe module 100 is placed on the zirconium-based cladding 500. The conductive layer 1013 in the first coil C1 is electrically connected to the sweep frequency control unit module 200 through the first port 1031. Current is passed into the first coil C1 through the sweep frequency control unit module 200. At the same time, the conductive layers 1013 in the four coils 1011 are sequentially electrically connected to the signal acquisition module 300 through the port 103. The voltage of the four coils 1011 is measured by the signal acquisition module 300. Then, current is sequentially passed into the second coil C2, the third coil C3, and the fourth coil C4, and the above operation is repeated to obtain 16 voltage values ​​V. ij Then, the probe module 100 is removed from the zirconium-based cladding 500. Here, i represents the coil number for current flow, j represents the coil number for voltage measurement, and V... ijThis indicates that current is passed into the i-th layer coil, and the voltage of the j-th layer coil is measured. i = 1, 2, 3, or 4, j = 1, 2, 3, or 4. The current is, for example, an AC excitation current, with an excitation frequency of, for example, 0.5 MHz to 6 MHz, and a current intensity of, for example, 0.5 amperes to 5 amperes. In this embodiment, the coil 1011 through which the current is passed is defined as the excitation coil, and the coil 1011 for measuring the voltage is defined as the receiving coil. When coil 1011 is neither an excitation coil nor a receiving coil, it will be in an open-circuit, inactive state, generating a very small electromagnetic field that will not affect the excitation coil or the receiving coil, thereby increasing the voltage value V. ij This improves the accuracy of measurement, thereby enhancing the accuracy of thickness measurement results.

[0095] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, multiple voltage values ​​V are obtained. ij Then, in step S14, a standard curve relating voltage and lift-off distance is obtained. Specifically, step S14 includes, for example, steps S141-S143. Based on the lift-off effect of eddy current detection, the lift-off distance between coil 1011 and zirconium-based cladding 500 changes, which is further reflected in the impedance change of coil 1011, and its voltage also changes. Therefore, a change in lift-off distance leads to a change in coil voltage. Different layers of coil 1011 have different lift-off distances, and thus different voltages in coil 1011.

[0096] Step S141: Obtain the voltage amplitude and voltage phase based on the voltage.

[0097] Step S142: Perform data fitting on the voltage amplitude and lift-off distance to obtain the first standard curve.

[0098] Step S143: Perform data fitting on the voltage phase and lift-off distance to obtain the second standard curve.

[0099] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, multiple voltage values ​​V are obtained. ij Then, in step S141, each voltage value V ij This includes the real part Im(U) and the imaginary part Re(U), which are obtained, for example, through a lock-in amplifier, and the voltage amplitude U and voltage phase ∠U are calculated according to the following relationship:

[0100]

[0101] Where U is the voltage amplitude, Im(U) is the real part of the voltage, Re(U) is the imaginary part of the voltage, ∠U is the voltage phase, and each voltage value V ij This corresponds to a voltage amplitude U and a voltage phase ∠U.

[0102] Please see Figure 1 , Figure 11 and Figure 14 As shown, in one embodiment of the present invention, after obtaining the voltage amplitude U and voltage phase ∠U, in step S142, based on the self-excited and self-received mode, for V 11 V 22 V 33 and V 44 The voltage amplitude U, and the lift-off distances of the first layer coil C1, second layer coil C2, third layer coil C3, and fourth layer coil C4 are used for data fitting. A linear fit is performed with the lift-off distance as the x-axis and the voltage amplitude U as the y-axis to obtain the first standard curve. The deviation of the linear fit is, for example, 0.99-0.999. Therefore, there is a linear relationship between the lift-off distance and the voltage amplitude U.

[0103] Please see Figure 1 , Figure 11 and Figure 15 As shown, in one embodiment of the present invention, in step S143, based on the self-excited and self-received mode, for V 11 V 22 V 33 and V 44 The voltage phase ∠U and the lift-off distances of the first layer coil C1, the second layer coil C2, the third layer coil C3, and the fourth layer coil C4 are used for data fitting. A linear fit is performed with the lift-off distance as the abscissa and the voltage phase ∠U as the ordinate to obtain a second standard curve. The deviation of the linear fit is, for example, 0.5-0.8. Therefore, there is a non-linear relationship between the lift-off distance and the voltage phase ∠U. Comparing the voltage phase ∠U and the voltage amplitude U, it can be seen that the lift-off distance and the voltage amplitude U have a linear relationship. Therefore, the first standard curve showing the relationship between the voltage amplitude U and the lift-off distance is selected as the standard curve for subsequent measurement steps of the 502 oxide film thickness.

[0104] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, after obtaining the standard curve, in step S15, the substrate is, for example, a zirconium-based cladding 500, and the film layer is, for example, an oxide film layer 502. Specifically, the surface of the zirconium-based cladding 500 has a coating 501 and an oxide film layer 502. The coating 501 is disposed on the surface of the zirconium-based cladding 500, and the oxide film layer 502 is formed on the coating 501 due to strong neutron radiation, high pressure, high temperature, and high-flow-rate circulating water. The thickness of the oxide film layer 502 is unknown.

[0105] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, in step S16, the probe module 100 is placed on the oxide film layer 502, and a preset distance h is maintained between the probe module 100 and the oxide film layer 502. The present invention does not limit the value of the preset distance h, and it can be selected according to actual needs. In this embodiment, the preset distance h is, for example, greater than or equal to 0.

[0106] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, after the probe module 100 is placed, in step S17, current is passed through the preset coil 1011 in the probe module 100, and the voltage of the preset coil 1011 is measured to obtain the measured voltage. The current is, for example, an AC excitation current, and the intensity and excitation frequency of the current are equal to the current passed through the coil 1011 in step S13 to ensure consistent test conditions and improve measurement accuracy. Furthermore, the present invention does not limit the number of layers of the preset coil 1011. For example, the test method is described using the preset coil 1011 as the first layer coil C1.

[0107] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, after obtaining the measurement voltage, in step S18, the lift-off distance corresponding to the measurement voltage is found in the first standard curve. The lift-off distance is the distance between the zirconium-based cladding 500 and the first layer coil C1, and the difference between the lift-off distance and the preset distance h is the thickness of the oxide film layer 502.

[0108] Please see Figure 1 and Figure 11As shown, this invention proposes a multi-layer arrayed eddy current frequency sweep method for measuring the thickness of zirconium-based cladding oxide film. By combining a multi-layer arrayed coil 101 with a frequency sweep detection method, high-precision acquisition of microscale multi-position electromagnetic signals transmitted and received on the oxide film layer 502 of the zirconium-based cladding 500 can be achieved. This extends one-dimensional detection data to three dimensions, enriching the amount of detection information and providing an effective solution for the accurate quantification of the oxide film layer 502 thickness. The main principle of eddy current detection is the mutual inductance effect between the multi-layer arrayed coil 101 and the zirconium-based cladding 500. When a current signal is applied to the multi-layer arrayed coil 101, an induced magnetic field is generated near the coil. The alternating induced magnetic field induces a current within the metal material. According to Lenz's law, the direction of the magnetic field generated by the eddy current is opposite to the direction of the magnetic field generated by the induced current. The induced current is based on mutual inductance. By generating an induced current within the multilayer array coil 101, the magnitude of the current signal at the upper port 103 of the multilayer array coil 101 is affected. By measuring the change in the output signal of the multilayer array coil 101, parameters such as the thickness, defects, and conductivity of the metallic material can be quantified. For measuring the thickness of the oxide film layer 502 on the zirconium-based cladding 500, the lift-off effect of eddy current detection is utilized. Different oxide film layer 502 thicknesses cause changes in the lift-off between the multilayer array coil 101 and the zirconium-based cladding 500, which is further reflected in the impedance change of the multilayer array coil 101, and its output signal also changes, thereby achieving the detection of the oxide film layer 502 thickness.

[0109] Please see Figure 1 and Figure 11 As shown, in one embodiment of the present invention, the interaction between the eddy current magnetic field and the magnetic field of the multilayer array coil 101 leads to a decrease in the equivalent inductance of the multilayer array coil 101. Simultaneously, since the eddy currents in the conductor consume energy, the equivalent resistance of the multilayer array coil 101 increases. Due to the distance l between the probe module 100 and the zirconium-based cladding 500 (excluding the coating 501), the electromagnetic characteristics of the zirconium-based cladding 500 (resistivity and permeability, as well as the frequency of the alternating current) will change the coupling relationship between the conductor and the multilayer array coil 101. Therefore, the equivalent impedance of the probe coil can be expressed as follows.

[0110] z eff =F(l,ρ,μ,f);

[0111] Among them, z eff Let l be the equivalent impedance, l be the distance between the probe module 100 and the zirconium-based cladding 500, ρ be the resistivity, μ be the permeability, and f be the frequency of the alternating current. When operating at a fixed frequency, the electromagnetic properties of the target conductor remain unchanged, i.e., ρ, μ, and f are all constants. Therefore, the equivalent impedance of the eddy current probe can be simplified to the following form.

[0112] z eff=F(l)=R(l)+jωL(l);

[0113] Among them, z eff Let R(l) represent the equivalent resistance and jωL(l) represent the inductance, where L is the equivalent impedance. The multilayer array coil 101 of the probe module 100 can be equivalently represented as a series connection of a resistor and an inductor. This equivalent resistance and inductance change with the distance between the probe module 100 and the zirconium-based cladding 500. According to the eddy current skin effect, eddy currents are usually only distributed on the surface of the conductor near the coil side, and the eddy current distribution decays exponentially from the surface to the interior. The skin depth is a physical quantity describing the degree of eddy current decay, usually referring to the depth at which the eddy current density decays to 1 / e times the eddy current density at the conductor surface. The calculation formula is shown below.

[0114]

[0115] Where δ represents the skin depth of the eddy current within the specimen. Given a specific conductor, a higher operating frequency results in a smaller skin depth and higher detection sensitivity. The operating frequency of an eddy current probe primarily depends on the bandwidth of the signal demodulation circuit and the self-resonant frequency of the detection coil. Typically, the operating frequency of an eddy current probe should be less than one-third of its coil's self-resonant frequency, as expressed in the following formula.

[0116]

[0117] Among them, f SRF The self-resonant frequency of the coil can be calculated using the following formula.

[0118]

[0119] Where L is the inductance of the eddy current coil, and C is the parasitic capacitance of the eddy current coil. The larger the coil size and the more layers, the greater the distributed capacitance and the greater the inductance. SRF The smaller the value, the lower the allowed operating frequency.

[0120] Please see Figure 1 and Figure 11 As shown in one embodiment of the present invention, if the excitation frequency of the eddy current detection technology is set to a fixed value, the amount of information related to the specimen parameters obtained is very limited, and it is easily affected by external interference, leading to a decrease in measurement accuracy. Therefore, in this application, the swept-frequency eddy current detection technology broadens the signal spectrum and enriches the impedance characteristics of the coil by periodically changing the excitation signal frequency. Under different excitation frequencies, the coil response caused by the structure and electromagnetic parameters of the specimen will change to different degrees. By analyzing the variation law of these coil responses, multiple target parameters can be extracted or interference signals can be suppressed, thereby improving measurement accuracy.

[0121] Please see Figure 1 , Figure 11 and Figure 17 As shown, in one embodiment of the present invention, assuming that the probe module 100 has n coils 1011, an AC excitation current is supplied to the p-th coil 1011 using a multiplexer circuit, and the induced voltages of the n coils 1011 are read respectively, where q = 1, 2, ..., n. The mutual impedance change between each coil 1011 can be calculated using the following formula.

[0122]

[0123] Among them, I S For AC excitation current, V pq Let ΔZ be the induced voltage, ΔZ be the impedance, p represent the coil number carrying the current, and q represent the coil number measuring the voltage. Under a single-frequency excitation, traversing all coils 1011 yields an n×n data matrix. Then, by sweeping the frequency measurement across multiple excitation frequencies, the data can be obtained... Figure 17 The diagram shows a three-dimensional impedance matrix. Here, f represents the excitation frequency.

[0124] The technical solution of the present invention will be described in detail below through a specific embodiment.

[0125] Example 1

[0126] A zirconium-based cladding is provided, on which a coating is provided with a thickness of 8 micrometers, and an oxide film layer is provided on the coating, the thickness of which is unknown.

[0127] A four-layer stacked coil is provided, comprising four layers of coils arranged coaxially, with a spacing of 10 micrometers between adjacent layers. Each coil layer includes an insulating layer and a conductive layer, with the conductive layer disposed on the insulating layer. The conductive layer is rectangular in shape, with a length of 29 μm and a width of 1 μm, in a direction perpendicular to the coil axis. The four-layer stacked coil is in close contact with a zirconium-based clad tube. An excitation current of 1 ampere and an excitation frequency of 500 kHz is sequentially passed through the four layers of coil, and the voltage V of the four layers of coil is measured. ij , i represents the coil number through which current is passed, j represents the coil number for measuring voltage, V ij This involves passing current through the i-th layer coil and measuring the voltage of the j-th layer coil, where i = 1, 2, 3, or 4, and j = 1, 2, 3, or 4. Then, based on the real and imaginary parts of the voltage, the voltage amplitude and phase are calculated. Next, the excitation frequency is changed, and the above steps are repeated with excitation frequencies of 1MHz, 2MHz, 3MHz, 4MHz, 5MHz, and 6MHz.

[0128] Please see Figure 12 and Figure 13As shown, the voltage amplitude and voltage phase of the four-layer coil are statistically analyzed under different excitation frequencies. Figure 12 and Figure 13 The first-layer excitation coil represents the current flowing into the first-layer coil, the first-layer receiving coil represents the voltage measurement of the first-layer coil, and so on. Figure 12 and Figure 13 It can be seen that once the excitation coil is selected, as the position of the receiving coil moves upward (the coil number increases), the voltage amplitude of the coil gradually decreases, while the voltage phase gradually increases.

[0129] Please see Figure 14 and Figure 15 As shown, for V 11 V 22 V 33 and V 44 The voltage amplitude and the lift-off distances of the first layer coil C1, the second layer coil C2, the third layer coil C3, and the fourth layer coil C4 are linearly fitted to V. 11 V 22 V 33 and V 44 The voltage phase and the lift-off distances of the first layer coil C1, the second layer coil C2, the third layer coil C3, and the fourth layer coil C4 are linearly fitted. Figure 14 and Figure 15 It can be seen that there is no linear relationship between voltage phase and lift-off distance, but there is an approximately linear relationship between voltage amplitude and lift-off distance. Therefore, the relationship between voltage amplitude and lift-off distance can be used as a standard curve for quantifying oxide film thickness.

[0130] Please see Figure 14 As shown, after obtaining the standard curve, the four-layer stacked coils are placed close to the oxide film layer on the zirconium-based clad tube. Then, an excitation current of 1 ampere and an excitation frequency of 500 kHz is passed into the first layer coil C1, and the voltage of the test coil is measured. After obtaining the measured voltage, the lift-off distance corresponding to the measured voltage is found in the standard curve. The lift-off distance is 7 micrometers, meaning the thickness of the oxide film layer is 7 micrometers. Therefore, the standard curve relating voltage amplitude and lift-off distance allows for precise quantification of the oxide film layer thickness without prior calibration, thus simplifying the measurement process.

[0131] Please see Figure 16 As shown, the variation of the coil voltage amplitude under different excitation frequencies is statistically analyzed. Figure 16It can be seen that as the excitation frequency increases, the voltage amplitude of the coil gradually increases, and the trend of change of the coil voltage amplitude becomes more obvious. Therefore, appropriately increasing the excitation frequency can more accurately fit the trend of change of coil voltage amplitude, thereby reducing the fitting deviation and increasing the sensitivity of eddy current detection.

[0132] In summary, this invention provides a method and system for measuring the thickness of a film layer on a substrate. Based on semiconductor micro / nano fabrication technology, a multi-layered array of eddy current coils is designed. By reducing the size of the detection unit, high-precision acquisition of multi-position electromagnetic signals at the micrometer scale is achieved. This is combined with swept-frequency eddy current detection technology for accurate measurement of the oxide film thickness on a zirconium-based cladding, thereby improving the accuracy of the measurement results. Furthermore, the measurement method and system provided by this invention do not require probe module calibration, avoiding interference from the external environment, thus simplifying the measurement process and improving the consistency of the measurement results.

[0133] The embodiments of the present invention disclosed above are merely illustrative of the invention. These embodiments do not exhaustively describe all details, nor do they limit the invention to the specific implementations described. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A method of measuring the thickness of a film layer on a substrate, characterized by, At least comprising the following steps: Providing a substrate; Providing a probe module, which is placed on the substrate, and the probe module comprises a multi-layered coil array, the multi-layered coil array comprises a plurality of coils arranged coaxially and spaced apart, and the distance between each coil and the substrate is different; Sequentially passing current into the coils, measuring the voltage of each coil, obtaining a plurality of voltages, and removing the probe module from the substrate; Obtaining a standard curve of the relationship between the voltage and the distance; Providing another substrate, and the substrate is provided with a film layer; Placing the probe module on the film layer, and maintaining a preset distance between the probe module and the film layer; Passing current into a preset coil in the probe module, measuring the voltage of the preset coil, and obtaining a measured voltage; And According to the standard curve, the measured voltage and the preset distance, obtaining the thickness of the film layer.

2. The measurement method according to claim 1, characterized in that, The step of obtaining a plurality of voltages at least comprises: Passing current into a preset coil in the multi-layered coil array, measuring the voltage of the preset coil; Changing the preset coil, repeating the steps of passing current and measuring voltage until the voltage of all coils is measured; and Obtaining a plurality of voltages.

3. The measurement method according to claim 1, characterized in that, The step of obtaining the standard curve at least comprises: According to the voltage, obtaining the voltage amplitude and the voltage phase; Obtaining a first standard curve of the relationship between the voltage amplitude and the distance; and Obtaining a second standard curve of the relationship between the voltage phase and the distance.

4. The measurement method according to claim 1, characterized by, The multi-layered coil array is obtained at least by the following steps: Providing a substrate; Sequentially forming an insulating layer and a conductive layer on the substrate; Forming a photoresist layer on the conductive layer, using the photoresist layer as a mask, and etching the conductive layer; Repeating the steps of forming the insulating layer, forming the conductive layer and etching the conductive layer on the etched conductive layer to obtain a plurality of insulating layers and a plurality of conductive layers; and Cutting the substrate to obtain a stack of the plurality of insulating layers and the plurality of conductive layers. At least comprising:

5. A system for measuring the thickness of a film layer on a substrate, the system comprising: A probe module arranged on a substrate, the probe module comprising a multi-layered coil array, the multi-layered coil array comprising a plurality of coils arranged coaxially; A sweep control unit module electrically connected to the probe module; A signal acquisition module electrically connected to the probe module; and A signal quantification evaluation module electrically connected to the sweep control unit module and the signal acquisition module. The coil comprises a conductive layer and an insulating layer, and the conductive layer is arranged on the insulating layer.

6. The measurement system of claim 5, wherein, For two adjacent coils, the conductive layer in one coil and the insulating layer in the other coil are arranged in contact.

7. The measurement system of claim 6, wherein, The multi-layered coil array further comprises a common ground hole, and the common ground hole penetrates the plurality of coils.

8. The measurement system of claim 5, wherein, The multi-layered coil array further comprises a plurality of ports, each port penetrates the plurality of coils, and at least two leads are arranged in each port, and one end of the lead in different ports is electrically connected to the conductive layer in different coils.

9. The measurement system of claim 6, wherein, ​ 10. The measurement system of claim 9, wherein, In the same port, at least one of the lead wires is electrically connected to the sweep control unit module at an end away from the conductive layer, and at least one of the lead wires is electrically connected to the signal acquisition module at an end away from the conductive layer.

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