Driving circuit array test structure and OLED display device

By measuring the row and column currents of the driving circuit array test structure, the problem of unpredictable display defects in the front-end process of OLED displays was solved. This enabled the rapid identification of abnormal locations after the front-end process was completed, shortening the development cycle and reducing interference from the back-end process.

CN121633770APending Publication Date: 2026-03-10SEMICON MFG INT (BEIJING) CORP +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-04
Publication Date
2026-03-10

AI Technical Summary

Technical Problem

During the R&D phase of OLED displays, existing technologies cannot predict display defects after the front-end processes are completed, leading to delays in development and potential interference with display performance in later processes.

Method used

A test structure for a drive circuit array is provided, including a first test unit and a second test unit, which are respectively connected to the row lines and column lines of the drive circuit, for measuring current to determine the location of abnormal drive circuits.

Benefits of technology

Defects can be predicted and displayed by current measurement, shortening the development cycle, avoiding interference from subsequent processes, and improving testing efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention discloses a driving circuit array test structure and OLED display equipment. The driving circuit array test structure comprises at least one of a first test unit and a second test unit. Wherein the first test unit is used for being connected with a row line of a driving circuit so as to measure current of each row line of the driving circuit in a test state to obtain a first test result; and the second test unit is used for being connected with the column lines of the driving circuit so as to measure the current of each column line of the driving circuit in the test state to obtain a second test result. By adopting the scheme, the driving circuit can be tested in the OLED front-end process, and possible display defects can be predicted, so that the product development period is shortened.
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Description

Technical Field

[0001] This invention relates to the field of electronic circuit technology, specifically to a driving circuit array test structure and an OLED display. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are organic light-emitting devices that generate visible light through carrier injection and recombination. Compared to liquid crystal displays (LCDs), screens made using OLED microdisplay technology have advantages such as vibrant colors and low power consumption, and are currently widely used in display fields such as augmented reality (AR) and virtual reality (VR).

[0003] In the early stages of OLED display development, various display defects may exist. Some of these defects are related to the front-end process (silicon-based driving circuitry). For example, bright spots and dark spots may be caused by abnormal pixel leakage, while bright lines and dark lines may be caused by abnormal leakage in the row and column lines.

[0004] Currently, display defects in OLED displays can only be determined after the screen is turned on. However, the back-end processes for OLED are very time-consuming, which severely delays development. In addition, the back-end processes may interfere with the display effect, requiring extensive work to eliminate potential display defects, which is both time-consuming and labor-intensive. Summary of the Invention

[0005] The problem this invention aims to solve is: to test the driving circuit after the front-end process is completed without performing the back-end OLED process, and to predict potential display defects.

[0006] To address the above problems, embodiments of the present invention provide a test structure for a driving circuit array, wherein the driving circuit array includes multiple driving circuits, each corresponding one-to-one with an OLED pixel unit; the test structure includes at least one of a first test unit and a second test unit; wherein:

[0007] The first test unit is used to connect to the row lines of the drive circuit to measure the current to each row line of the drive circuit in the test state to obtain the first test result.

[0008] The second test unit is used to connect to the column lines of the drive circuit to measure the current to each column line of the drive circuit in the test state, so as to obtain the second test result.

[0009] In one possible embodiment, the first test unit includes: a plurality of first switching devices and a first current detection subunit; wherein:

[0010] The first switching device is connected to each row line of the driving circuit in a one-to-one correspondence, and is used to control the working state of the driving circuit;

[0011] The first current detection subunit is connected to the first switching device and is used to detect the current of the connected row line.

[0012] In one possible embodiment, the first switching device is a first MOS transistor.

[0013] In one possible embodiment, the first current detection subunit includes an ammeter, which is connected to the first switching device in a one-to-one correspondence.

[0014] In one possible embodiment, the first current detection subunit, connected to all the first switching devices, is also used to determine whether there is an abnormal driving circuit and the location of the row where the abnormal driving circuit is located based on the current of each row line of the driving circuit.

[0015] In one possible embodiment, the second test unit includes: a plurality of second switching devices and a second current detection subunit; wherein:

[0016] The second switching device is connected one-to-one with the column lines of the driving circuit and is used to control the working state of the driving circuit;

[0017] The second current detection subunit is connected to the second switching device in a one-to-one correspondence, and is used to detect the current of the connected column line.

[0018] In one possible embodiment, the second switching device is a second MOSFET.

[0019] In one possible embodiment, the second current detection subunit is an ammeter.

[0020] In one possible embodiment, the second current detection subunit is further configured to determine, based on the current values ​​of each column line of the driving circuit, whether there is an abnormal driving circuit and the position of the column where the abnormal driving circuit is located.

[0021] This invention also provides an OLED display device, the OLED display device comprising:

[0022] An OLED pixel array includes multiple OLED pixel units, each OLED pixel unit includes a driving circuit, and the driving circuits of each OLED pixel unit form a driving circuit array.

[0023] The above-described driving circuit array test structure is connected to the driving circuit array.

[0024] Compared with the prior art, the technical solution of the embodiments of the present invention has the following advantages:

[0025] By applying the solution of this invention, a first test unit connected to the row lines of the driving circuit is set up. This first test unit can measure the current of each row line of the driving circuit, thereby obtaining a first test result based on the current of each row line. Similarly, a second test unit connected to the column lines of the driving circuit is set up. This second test unit can measure the current of each column line of the driving circuit, thereby obtaining a second test result based on the current of each column line. Since abnormal pixel units in the OLED front-end process are usually caused by leakage in the abnormal pixel unit or by abnormal leakage in the row or column lines, based on at least one of the first and second test results, it can be determined whether a pixel unit is leaking current, or whether a row or column line is leaking current. This allows for testing of the driving circuit, enabling early prediction of display defects, shortening the development cycle, and facilitating subsequent improvements to address existing display defects by adjusting the circuitry or components, avoiding time wasted waiting for later processes. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of an OLED pixel unit;

[0027] Figure 2 This is a schematic diagram of an OLED pixel array;

[0028] Figure 3 This is a schematic diagram of the structure of an OLED display.

[0029] Figures 4 to 7 These are schematic diagrams illustrating different display defects;

[0030] Figure 8 This is a schematic diagram of a test structure for a driving circuit array in an embodiment of the present invention;

[0031] Figure 9 This is a schematic diagram of another driving circuit array test structure in an embodiment of the present invention;

[0032] Figure 10 This is a schematic diagram of another driving circuit array test structure in an embodiment of the present invention;

[0033] Figure 11 This is a schematic diagram of another driving circuit array test structure in an embodiment of the present invention;

[0034] Figure 12 This is a schematic diagram of another driving circuit array test structure in an embodiment of the present invention;

[0035] Figures 13 to 15 This is a schematic diagram of different test results in embodiments of the present invention. Detailed Implementation

[0036] Figure 1 This is a schematic diagram of the structure of a pixel unit. (Refer to...) Figure 1 The OLED pixel unit includes a driving circuit and an OLED light-emitting device. The driving circuit includes a switch M1, a driving transistor M2, and a capacitor C1. Row line W is connected to the gate of switch M1 and is used to input a row control signal to the gate of switch M1. Column line B is connected to one end of switch M1 and is used to input a column control signal to one end of switch M1. The other end of switch M1 is connected to capacitor C1 and driving transistor M2. One end of driving transistor M2 is connected to the power supply voltage VDD, and the other end is connected to the OLED light-emitting device.

[0037] The horizontal control signal turns on the switch M1, which in turn charges the capacitor C1. After the capacitor C1 is fully charged, the horizontal control signal turns off the switch M1, and the voltage signal stored in the capacitor C1 is applied to the driver transistor M2, causing the driver transistor M2 to turn on, thereby driving the OLED light-emitting device to emit light.

[0038] For displays, each OLED pixel unit includes a driving circuit, and multiple OLED pixel units are arranged in an array to form a display. Figure 2 The OLED pixel array shown. Specifically, refer to... Figure 2 The shift register generates shift pulse signals as row control signals to scan the OLED pixel array row by row, thereby controlling whether an OLED pixel unit in a row is selected. The column control signals load the data voltage of each OLED pixel unit. Through the coordination of the row and column control signals, a continuously refreshed image is generated. Because the refresh rate is very high, lower than the human eye's reaction time, a continuous image is perceived.

[0039] In the front-end processes of OLED products, the driving circuits for each OLED pixel unit are formed. In the back-end processes of OLED products, refer to... Figure 3 The driving circuit needs to be combined with the OLED light-emitting film through the anode, then through the color filter, plus the transparent cathode and glass protective cover to finally make the screen.

[0040] OLED products often suffer from various display defects during the early stages of research and development, such as... Figures 4 to 7 As shown. Some of these display defects are related to the front-end process (drive circuit). For example, Figure 4 Highlights and defects shown in the text Figure 5 The dark spot defects shown may be caused by abnormal leakage current in the OLED pixel unit. Figure 6 Bright line defects and Figure 7 The defect in the dark wiring may be caused by abnormal leakage in the row or column lines.

[0041] Currently, in the front-end processes of OLED products, display defects cannot be predicted, and there are no electrical methods to test the driving circuits; the only way to determine the problem is by turning the screen on. Meanwhile, the back-end processes of OLED are very time-consuming, which severely delays development. Furthermore, the back-end processes may interfere with the display effect, requiring extensive work to eliminate potential display defects introduced by these processes—a time-consuming and labor-intensive process.

[0042] Therefore, a driving circuit testing scheme is needed that can be tested after the OLED front-end process is completed to predict potential display defects, determine the location of defective pixels, and facilitate targeted improvements to shorten the development cycle.

[0043] To address this problem, the present invention provides a driving circuit array test structure, which may include at least one of a first test unit and a second test unit. The first test unit can measure the current of each row line of the driving circuit, while the second test unit can measure the current of each column line of the driving circuit. This allows for the prediction of display defects caused by abnormal current in the OLED front-end process.

[0044] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0045] This invention provides a test structure for a driving circuit array, wherein the driving circuit array includes multiple driving circuits, each corresponding to a OLED pixel unit; the test structure may include at least one of a first test unit and a second test unit.

[0046] The first test unit is used to connect to the row lines of the drive circuit to measure the current to each row line of the drive circuit in the test state to obtain the first test result.

[0047] The second test unit is used to connect to the column lines of the drive circuit to measure the current to each column line of the drive circuit in the test state, so as to obtain the second test result.

[0048] In specific implementations, the driving circuit array test structure may include only a first test unit, thereby measuring the current in each row line of the driving circuit to determine the row position of the display defect. Alternatively, the driving circuit array test structure may include only a second test unit, thereby measuring the current in each column line of the driving circuit to determine the column position of the display defect. The driving circuit array test structure may also include both a first test unit and a second test unit, thereby measuring the current in each row and column line of the driving circuit to determine the row and column positions of the display defect.

[0049] By setting up a test structure for the driving circuit array, it is possible to test the OLED driving circuit without waiting for the completion of the OLED product's back-end processes. This allows for faster development, reduces the time required for display defect prediction, and improves prediction efficiency.

[0050] In one embodiment of the present invention, the first test unit includes: a plurality of first switching devices and a plurality of first current detection subunits. The first switching devices are connected one-to-one with the row lines of the driving circuit and are used to control the operating state of the driving circuit. The first current detection subunits are connected to the first switching devices and are used to detect the current of the connected row lines.

[0051] Specifically, the operating states of the drive circuit can include a test state and a non-test state. The first switching device can be turned on under the control of the first test control signal, thereby causing the drive circuit to enter the test state, whereby the first test unit can test the drive circuit. Alternatively, the first switching device can be turned off under the control of the first test control signal, thereby causing the drive circuit to enter the non-test state, whereby the first test unit can be disconnected from the drive circuit, allowing the drive circuit to operate normally.

[0052] In specific implementation, the first switching device can be any device that can be used as a switch. For example, the first switching device can be a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a bipolar junction transistor (BJT).

[0053] In a specific implementation, the first current detection subunit can be any device capable of measuring current values.

[0054] In one embodiment of the present invention, the first current detection subunit includes an ammeter, and the ammeter is connected to the first switching device in a one-to-one correspondence.

[0055] Figure 8 This is a schematic diagram of a test structure for a driving circuit array according to an embodiment of the present invention. (Refer to...) Figure 8 The drive circuit array test structure may include a first test unit 71. The first test unit 71 includes multiple first switching devices and a first current detection subunit. The first switching devices are implemented using first MOSFETs. The first current detection subunit is implemented using an ammeter.

[0056] Specifically, the first test unit 71 may include: first MOSFETs Q1 to Qm and multiple ammeters Ax1 to Axm. The first MOSFET Q1 is connected to the row line X1 of the drive circuit. One end of ammeter Ax1 is connected to the first MOSFET Q1, and the other end is grounded. The first MOSFET Q2 is connected to the row line X2 of the drive circuit. One end of ammeter Ax2 is connected to the first MOSFET Q2, and the other end is grounded. ... The first MOSFET Qm is connected to the row line Xm of the drive circuit. One end of ammeter Axm is connected to the first MOSFET Qm, and the other end is grounded.

[0057] The first MOSFETs Q1 to Qm can all be PMOS transistors or all be NMOS transistors. The gates of the first MOSFETs Q1 to Qm are connected to the first test control terminal A, which is used to receive the first test control signal. The first test control signal controls all of the first MOSFETs Q1 to Qm to be turned on or off.

[0058] When all the first MOSFETs Q1 to Qm are turned on, a voltage is applied to the row lines X1 to Xm of the drive circuit, causing current to be generated in the row lines. Ammeter Ax1 can measure the current Ix1 flowing to the X1a terminal after the row line X1 is energized, ammeter Ax2 can measure the current Ix2 flowing to the X2a terminal after the row line X2 is energized, ..., ammeter Axm can measure the current Ixm flowing to the Xma terminal after the row line Xm is energized.

[0059] In practice, the presence of an abnormality in the drive circuit connected to each row can be determined based on the current measured by an ammeter, as well as the location of the row containing the abnormal drive circuit. Specifically, under normal circumstances, the voltage applied to each row of the drive circuit is equal, and the voltage value is the operating voltage of the drive circuit. By comparing the currents of each row, if an abnormal drive circuit exists, the current in the row containing the abnormal drive circuit will be significantly greater than or significantly less than the currents of other normal row lines.

[0060] In another embodiment of the present invention, the first current detection subunit can be connected to all the first switching devices, and the first current detection subunit is also used to determine whether there is an abnormal OLED pixel unit and the position of the row where the abnormal OLED pixel unit is located based on the current value of each row line of the driving circuit.

[0061] Specifically, refer to Figure 9 The drive circuit array test structure may include a first test unit 81. The first test unit 81 includes multiple first switching devices and a first current detection subunit 811.

[0062] Specifically, the first test unit 81 may include: first MOSFETs Q1 to Qm and a first current detection sub-unit 811. First MOSFET Q1 is connected to row line X1 of the driving circuit, first MOSFET Q2 is connected to row line X2 of the driving circuit, ..., first MOSFET Qm is connected to row line Xm of the driving circuit. The first current detection sub-unit 811 is connected to one end of the first MOSFETs Q1 to Qm. The first current detection sub-unit 811 is used to determine, based on the current of each row line of the driving circuit, whether an abnormal driving circuit exists and the location of the row containing the abnormal driving circuit.

[0063] In other words, the first current detection sub-unit 811 can not only detect the current of row lines X1 to Xm, but also automatically determine whether there is an abnormal driving circuit and the position of the row where the abnormal driving circuit is located based on the current of each row line.

[0064] Specifically, after the first test control signal controls all the first MOS transistors Q1 to Qm to be turned on, a voltage is applied to the row lines X1 to Xm of the drive circuit, so that the row lines generate current. The first current detection unit 811 can measure the current after the row lines X1 to Xm are energized and compare the current of each row line, thereby automatically determining whether there is an abnormality in the drive circuit connected to each row line, and the position of the abnormal drive circuit in the row.

[0065] In one embodiment of the present invention, the second test unit includes: a plurality of second switching devices and a second current detection subunit. The second switching devices are connected one-to-one with the column lines of the driving circuit and are used to control the operating state of the driving circuit. The second current detection subunit is connected to the second switching devices and is used to detect the current of the connected column lines.

[0066] Specifically, the operating states of the drive circuit can include a test state and a non-test state. The second switching device can be turned on under the control of the second test control signal, thereby causing the drive circuit to enter the test state, whereby the second test unit can test the drive circuit. Alternatively, the second switching device can be turned off under the control of the second test control signal, thereby causing the drive circuit to enter the non-test state, whereby the second test unit can be disconnected from the drive circuit, allowing the drive circuit to operate normally.

[0067] In a specific implementation, the second switching device can be any device that can be used as a switch, such as a MOSFET, IGBT, or BJT.

[0068] In a specific implementation, the second current detection subunit can be any device capable of measuring current values.

[0069] In one embodiment of the present invention, the second current detection subunit includes an ammeter, and the ammeter is connected to the second switching device in a one-to-one correspondence.

[0070] Figure 10 This is a schematic diagram of a test structure for a driving circuit array according to an embodiment of the present invention. (Refer to...) Figure 10 The drive circuit array test structure may include a second test unit 91. The second test unit 91 includes multiple second switching devices and a second current detection subunit. The second switching devices are implemented using second MOSFETs. The second current detection subunit is implemented using an ammeter.

[0071] Specifically, the second test unit 91 may include: second MOSFETs P1 to Pn and multiple ammeters AY1 to AYn. Second MOSFET P1 is connected to the column line Y1 of the drive circuit. One end of ammeter AY1 is connected to the second MOSFET P1, and the other end is grounded. First MOSFET P2 is connected to the column line Y2 of the drive circuit. One end of ammeter AY2 is connected to the second MOSFET P2, and the other end is grounded. ... Second MOSFET Pn is connected to the column line Yn of the drive circuit. One end of ammeter AYn is connected to the second MOSFET Pn, and the other end is grounded.

[0072] The second MOSFETs P1 to Pn can all be PMOS transistors or all be NMOS transistors. The gates of the second MOSFETs P1 to Pn are connected to the second test control terminal B, which is used to receive the second test control signal. The second test control signal controls all of the second MOSFETs P1 to Pn to be turned on or off.

[0073] When all the second MOSFETs P1 to Pn are turned on, a voltage is applied to the row lines Y1 to Yn of the drive circuit, causing the column to generate current. Ammeter AY1 can measure the current Iy1 flowing to the Y1a terminal after the column line Y1 is energized, ammeter AY2 can measure the current Iy2 flowing to the Y2a terminal after the column line Y2 is energized, ..., ammeter AYn can measure the current Iyn flowing to the Yna terminal after the column line Yn is energized.

[0074] In practice, the presence of an abnormality in the drive circuit connected to each column of lines can be determined based on the current measured by an ammeter, as well as the location of the column containing the abnormal drive circuit. Specifically, under normal circumstances, the voltage applied to each column of lines in the drive circuit is equal, and the voltage value is the operating voltage of the drive circuit. By comparing the currents of each column of lines, if an abnormal drive circuit exists, the current in the column containing the abnormal drive circuit will be significantly greater than or significantly less than the currents in other normal columns.

[0075] In another embodiment of the present invention, the second current detection subunit can be connected to all the second switching devices, and the second current detection subunit is also used to determine whether there is an abnormal driving circuit and the position of the column where the abnormal driving circuit is located based on the current value of each column line of the driving circuit.

[0076] Specifically, refer to Figure 11 The drive circuit array test structure may include a second test unit 101. The first test unit 101 includes multiple first switching devices and a first current detection subunit 1011.

[0077] Specifically, the first test unit 101 may include: second MOSFETs P1 to Pn and a first current detection sub-unit 1011. Second MOSFET P1 is connected to column line Y1 of the driving circuit, second MOSFET P2 is connected to column line Y2 of the driving circuit, ..., second MOSFET Pn is connected to column line Yn of the driving circuit. The second current detection sub-unit 1011 is connected to one end of the second MOSFETs P1 to Pn. The first current detection sub-unit 1011 is used to determine whether an abnormal driving circuit exists and the position of the column containing the abnormal driving circuit based on the current in each column line of the driving circuit.

[0078] In other words, 1011 can not only detect the current of column lines Y1 to Yn, but also automatically determine whether there is an abnormal driving circuit and the position of the column where the abnormal driving circuit is located based on the current of each column line.

[0079] Specifically, after the second test control signal controls all the second MOS transistors P1 to Pn to conduct, a voltage is applied to the column lines P1 to Pn of the driving circuit, so that a current is generated in the column lines. The second current detection unit 1011 can measure the current after the column lines P1 to Pn are pressurized, and compare the currents of each column line, so as to automatically determine whether there is an abnormality in the driving circuit connected to each column line, and the position of the column where the abnormal driving circuit is located.

[0080] In an embodiment of the present invention, the driving circuit array test structure may not only include a first test unit, but also include a second test unit.

[0081] For example, referring to Figure 12 , the driving circuit array test structure may include: a first test unit 71 and a second test unit 91. Among them, the first test unit 71 may refer to the above description about Figure 8 , and the second test unit 91 may refer to the above description about Figure 10 .

[0082] In a specific implementation, a high-level first test control signal is applied to the first MOS transistors Q1 to Qm in the first test unit 71 through the first test control terminal A, so that all the first MOS transistors Q1 to Qm are turned on, so that the ammeters Ax1 to Axm can measure the current values of the corresponding row lines.

[0083] A high-level second test control signal is applied to the second MOS transistors P1 to Pn in the second test unit 91 through the second test control terminal B, so that all the second MOS transistors P1 to Pn are turned on, so that the ammeters AY1 to AYn can measure the current values of the corresponding column lines.

[0084] Figures 13 to 15 Schematic diagrams of four common test results. Taking the Figure 12 driving circuit array test structure in as an example, specifically:

[0085] If it is tested that the currents of the row line X2 and the column line Y2 are abnormally high, that is, Ix2 >> Ix1, Ix3 and Ixm, Iy2 > Iy1, Iy3 and Iyn, then a bright spot defect may occur at the position of the driving circuit (2, 2), that is, Figure 13 the driving circuit shown in the area 121 in.

[0086] If it is tested that the currents of the row line X2 and the column line Y2 are abnormally low, that is, Ix2 << Ix1, Ix3 and Ixm, Iy2 < Iy1, Iy3 and Iyn, then a dark spot defect may occur at the position of the driving circuit (2, 2), that is, Figure 13 the driving circuit shown in the area 121 in.

[0087] If the test shows that the current of row line X2 is abnormally high and the current of column line Y2 is normal, that is, Ix2 >> Ix1, Ix3 and Ixm; Iy2 = Iy1 = Iy3 = Iyn, a bright line defect may occur, and the position of the bright line is the second row, as shown in Figure 14 the driving circuit shown in area 131 in

[0088] If the test shows that the current of column line Y2 is abnormally low and the current of row line X2 is normal, that is, Iy2 << Iy1, Iy3 and Iyn; Ix2 = Ix1 = Ix3 = Ixm, a dark line defect may occur, and the position of the dark line is the second column, as shown in Figure 15 the driving circuit shown in area 141 in

[0089] It should be noted that the defects of the driving circuit will be reflected on the driven OLED pixel units, thus causing display defects in the display device. However, in practical applications, the display defects of the display device are not limited to the above 4 types of defects. As long as a certain driving circuit is abnormal, the position of the abnormal driving circuit can be judged through the electrical test results.

[0090] In a specific implementation, the driving circuit array test structure in the embodiment of the present invention is located outside the pixel area. By using the first test control signal and the second test control signal to disconnect the first device and the second device, the test structure will not affect the driving circuit.

[0091] As can be seen from the above circuit, the driving circuit array test structure in the embodiment of the present invention can only use electrical tests to determine the position of the abnormal driving circuit in the driving circuit, so as to judge the possible display defects, which is conducive to targeted improvement and shortening the development cycle in the future. Moreover, by adopting the solution of the present invention, the driving circuit is tested before the OLED back-end process, excluding the interference that may be brought by the back-end process, reducing the workload and shortening the development cycle. And this test structure will not affect the original design of the internal driving circuit, has higher flexibility, and is conducive to subsequent improvement.

[0092] The embodiment of the present invention also provides an OLED display device. Specifically, the OLED display device may include:

[0093] An OLED pixel array, including a plurality of OLED pixel units, each OLED pixel unit includes a driving circuit, and the driving circuits of each OLED pixel unit form a driving circuit array;

[0094] The driving circuit array test structure of any of the above, connected to the driving circuit array.

[0095] In practice, OLED pixel units are arranged in an array to form an OLED pixel array. Each OLED pixel unit is driven by a driving circuit, and all driving circuits form a driving circuit array. This driving circuit array undergoes electrical testing using the same driving circuit array test structure, which can detect whether each driving circuit in the array is abnormal and determine the location of abnormal driving circuits. Subsequent improvements can be made to address existing display defects, adjusting either the circuitry or the components, avoiding time wasted waiting for later processing steps.

[0096] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A driving circuit array test structure, the driving circuit array comprising a plurality of driving circuits, the driving circuits corresponding to OLED pixel units one by one; characterized in that, The test structure comprises at least one of a first test unit and a second test unit, and wherein: The first test unit is connected with the row lines of the driving circuit to measure the current of each row line of the driving circuit in a test state to obtain a first test result. The second test unit is connected with the column lines of the driving circuit to measure the current of each column line of the driving circuit in a test state to obtain a second test result.

2. The drive circuit array test structure of claim 1, wherein, The first test unit comprises a plurality of first switching devices and a first current detection subunit, and wherein: The first switching device is connected with each row line of the driving circuit one by one to control the working state of the driving circuit. The first current detection subunit is connected with the first switching device to detect the current of the connected row line.

3. The drive circuit array test structure of claim 2, wherein, The first switching device is a first MOS tube.

4. The drive circuit array test structure of claim 2, wherein, The first current detection subunit comprises an ammeter connected with the first switching device one by one.

5. The drive circuit array test structure of claim 2, wherein, The first current detection subunit is connected with all the first switching devices and is further used to determine whether there is an abnormal driving circuit and the position of the abnormal driving circuit in the row based on the current of each row line of the driving circuit.

6. The drive circuit array test structure of claim 1, wherein, The second test unit comprises a plurality of second switching devices and a second current detection subunit, and wherein: The second switching device is connected with each column line of the driving circuit one by one to control the working state of the driving circuit. The second current detection subunit is connected with the second switching device one by one to detect the current of the connected column line.

7. The drive circuit array test structure of claim 6, wherein, The second switching device is a second MOS tube.

8. The drive circuit array test structure of claim 6, wherein, The second current detection subunit is an ammeter.

9. The drive circuit array test structure of claim 6, wherein, The second current detection subunit is further used to determine whether there is an abnormal driving circuit and the position of the abnormal driving circuit in the column based on the current value of each column line of the driving circuit.

10. An OLED display device, characterized by, The test structure comprises: An OLED pixel array comprising a plurality of OLED pixel units, each OLED pixel unit comprising a driving circuit, and the driving circuits of the OLED pixel units form a driving circuit array. The driving circuit array test structure according to any one of claims 1 to 9 is connected with the driving circuit array.