Auxiliary graph generation method, system and device, storage medium and program product

Abstract

The invention relates to an auxiliary graph generation method, system and device, a storage medium and a program product. According to the method, by determining the target layout and the feature region in the target layout, the initial auxiliary graph can be formed in the feature region, and the target sub-graph with the size larger than the preset size in the initial auxiliary graph is optimized to obtain the optimized auxiliary graph. In this way, the target auxiliary graph corresponding to the target layout can be obtained by copying the optimized auxiliary graph in other areas except the feature area in the target layout. By adopting the method, the exposure risk of the auxiliary pattern can be effectively reduced or even eliminated, so that the reliability of the auxiliary pattern can be improved, and subsequent processing on the target layout by adopting an advanced resolution enhancement technology is facilitated.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an auxiliary pattern generation method, system, device, storage medium and program product. BACKGROUND

[0002] Inverse Lithography Technology (ILT) is a method of inverting a pattern to be formed on a wafer to obtain a pattern on a mask. Compared with a traditional optical proximity effect correction method, ILT has a larger process window and smaller pattern edge placement error in lithographic imaging.

[0003] However, the auxiliary pattern generated by ILT has an irregular shape, and there is a risk of exposure in lithographic imaging, which is not reliable. SUMMARY

[0004] Therefore, it is necessary to provide an auxiliary pattern generation method, system, device, storage medium and program product to effectively reduce and eliminate the exposure risk of the auxiliary pattern and improve the reliability.

[0005] In a first aspect, the present disclosure provides an auxiliary pattern generation method, which comprises:

[0006] determining a target layout and determining a feature region in the target layout;

[0007] forming an initial auxiliary pattern in the feature region, the initial auxiliary pattern comprising a plurality of auxiliary sub-patterns;

[0008] determining a target sub-pattern having a size greater than a preset size in each auxiliary sub-pattern;

[0009] optimizing the target sub-pattern to obtain an optimized auxiliary pattern;

[0010] copying the optimized auxiliary pattern in other regions outside the feature region in the target layout to obtain a target auxiliary pattern corresponding to the target layout.

[0011] In some embodiments of the present disclosure, forming an initial auxiliary pattern in the feature region comprises:

[0012] determining a target pattern to be formed in the target layout;

[0013] forming an initial auxiliary pattern in the feature region according to the target pattern by ILT.

[0014] In some embodiments of the present disclosure, determining a target sub-pattern having a size greater than a preset size in each auxiliary sub-pattern comprises:

[0015] Classify each auxiliary sub-pattern based on the size, and obtain a type of auxiliary sub-patterns with a length greater than a preset length as the target sub-patterns;

[0016] And / or, classify each auxiliary sub-pattern based on the size, and obtain a type of auxiliary sub-patterns with an area greater than a preset area as the target sub-patterns.

[0017] In some embodiments of the present disclosure, the target sub-patterns are optimized to obtain the optimized auxiliary patterns, including:

[0018] The target sub-patterns with a size greater than a preset size are segmented to obtain a plurality of sub-pattern units with a size less than or equal to the preset size, so that the sub-pattern units and the auxiliary sub-patterns with a size less than or equal to the preset size jointly constitute the optimized auxiliary patterns.

[0019] In some embodiments of the present disclosure, a feature region is determined in the target layout, including:

[0020] The mask patterns of the target layout and the pattern distribution of the mask patterns are determined.

[0021] According to the pattern distribution, the mask patterns are divided into a plurality of pattern regions with the same size, and a pattern region including any corner in the mask patterns is taken as the feature region.

[0022] In some embodiments of the present disclosure, the optimized auxiliary patterns are copied to other regions outside the feature region in the target layout to obtain the target auxiliary patterns corresponding to the target layout, including:

[0023] According to the pattern distribution, the optimized auxiliary patterns are copied to other pattern regions outside the feature region, so that each pattern region has a corresponding optimized auxiliary pattern;

[0024] The target auxiliary patterns are obtained according to the optimized auxiliary patterns corresponding to each pattern region.

[0025] In a second aspect, the present disclosure further provides an auxiliary pattern generation system, which includes a region determination device and a pattern processing device; wherein,

[0026] The region determination device is configured to determine a target layout and determine a feature region in the target layout.

[0027] The pattern processing device is connected with the region determination device and is configured to form an initial auxiliary pattern in the feature region, the initial auxiliary pattern including a plurality of auxiliary sub-patterns; determine target sub-patterns with a size greater than a preset size in each auxiliary sub-pattern; optimize the target sub-patterns to obtain optimized auxiliary patterns; and copy the optimized auxiliary patterns to other regions outside the feature region in the target layout to obtain target auxiliary patterns corresponding to the target layout.

[0028] In a third aspect, the present disclosure provides an electronic device, comprising a memory and a processor, the memory storing a computer program, and the processor implementing the steps of the method provided in any one of the first aspect when executing the computer program.

[0029] In a fourth aspect, the present disclosure provides a computer-readable storage medium, storing a computer program, and the computer program implementing the steps of the method provided in any one of the first aspect when executed by a processor.

[0030] In a fifth aspect, the present disclosure provides a computer program product, comprising a computer program, and the computer program implementing the steps of the method provided in any one of the first aspect when executed by a processor.

[0031] The embodiments of the present disclosure can have / at least have the following advantages:

[0032] In the embodiments of the present disclosure, by determining the target layout and the feature region in the target layout, the initial auxiliary pattern can be formed in the feature region, and the target sub-pattern with a size greater than a preset size in the initial auxiliary pattern is optimized to obtain the optimized auxiliary pattern. In this way, by copying the optimized auxiliary pattern in other regions outside the feature region of the target layout, the target auxiliary pattern corresponding to the target layout can be obtained. The auxiliary pattern generation method provided in the embodiments of the present disclosure can generate the optimized auxiliary pattern based on the feature region in the target layout, and then copy the optimized auxiliary pattern to other regions outside the feature region, thereby improving the processing efficiency. Meanwhile, the optimized auxiliary pattern in the embodiments of the present disclosure optimizes the target sub-pattern with a size greater than a preset size in the initial auxiliary pattern, which can effectively avoid abnormal exposure due to the excessively large size of the auxiliary sub-pattern, that is, can effectively reduce or even eliminate the exposure risk of the auxiliary pattern, thereby improving the reliability of the auxiliary pattern, so as to facilitate subsequent processing of the target layout by using the advanced resolution enhancement technology.

[0033] The details of one or more embodiments of the present disclosure are presented in the following drawings and description. Other features, objects, and advantages of the present disclosure will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the related art, the drawings needed to be used in the embodiments or the related art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor based on these drawings.

[0035] Figure 1 Flowchart of the auxiliary pattern generation method in some embodiments;

[0036] Fig. 2(a), Fig. 2(b) and Fig. 2(c) are schematic diagrams of the copy optimization auxiliary pattern in some embodiments;

[0037] Figure 3 Fig. 1 is a schematic diagram of the initial auxiliary pattern in some embodiments;

[0038] Figure 4 Fig. 3 is a schematic diagram of the optimization of the target sub-pattern in some embodiments;

[0039] Figure 5 Fig. 4 is a schematic diagram of the optimization auxiliary pattern in some embodiments;

[0040] Figure 6 Fig. 5 is a schematic diagram of the flow of the auxiliary pattern generation method in some other embodiments;

[0041] Figure 7 Fig. 6 is a schematic diagram of the structure of the auxiliary pattern generation system in some embodiments;

[0042] Figure 8 Fig. 7 is a schematic diagram of the internal structure of the electronic device in some embodiments.

[0043] BRIEF DESCRIPTION OF DRAWINGS

[0044] 12, auxiliary sub-pattern; 14, target sub-pattern; 30, mask pattern; 40, target pattern; 50, feature area. DETAILED DESCRIPTION

[0045] In order to facilitate the understanding of the present disclosure, the present disclosure will be described more fully below with reference to the accompanying drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present disclosure is more thorough and complete.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the disclosure herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure.

[0047] It should be understood that although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, the first element, component, region, layer or section discussed below can be represented as the second element, component, region, layer or section without departing from the teachings of the present disclosure.

[0048] It should be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or connected or coupled to the other element through intervening elements. In addition, "connected" or "coupled" as used in the following embodiments can be "electrically connected or coupled", "communicatively connected or coupled", or the like if there is a transmission of electrical signals or data between the connected or coupled objects.

[0049] It should be understood that the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. It should be further understood that the term "comprises" or "comprising" or "includes" or "including" or "has" or "having" or the like are specifically intended to be open-ended terms that do not exclude additional elements or steps.

[0050] The embodiments of the present disclosure provide an auxiliary pattern generation method, system, device, storage medium and program product, which determines a feature region in a target layout and copies an auxiliary pattern generated from the feature region to other regions outside the feature region, thereby improving processing efficiency. Meanwhile, the auxiliary pattern is optimized based on size, thereby avoiding abnormal exposure caused by excessively large size of the auxiliary pattern and improving reliability of the auxiliary pattern.

[0051] Referring to Figure 1 The present disclosure provides an auxiliary pattern generation method, which can include the following steps 102 to 110.

[0052] In step 102, a target layout is determined, and a feature region is determined in the target layout.

[0053] In step 104, an initial auxiliary pattern is formed in the feature region, and the initial auxiliary pattern includes a plurality of auxiliary sub-patterns.

[0054] In step 106, a target sub-pattern with a size greater than a preset size is determined in each auxiliary sub-pattern.

[0055] In step 108, the target sub-pattern is optimized to obtain an optimized auxiliary pattern.

[0056] In step 110, the optimized auxiliary pattern is copied to other regions outside the feature region in the target layout to obtain a target auxiliary pattern corresponding to the target layout.

[0057] Referring to FIGS. 2(a) to 2(c), the target layout is a layout used for photolithography processing. The feature region 50 is used to represent a region including a repeated structure of the target layout. The present disclosure can form an initial auxiliary pattern in the feature region by determining the target layout and the feature region 50 in the target layout.

[0058] When the initial auxiliary pattern is formed, the target sub-pattern 14 with a size greater than the preset size in the initial auxiliary pattern is optimized to obtain an optimized auxiliary pattern. In this way, by copying the optimized auxiliary pattern in other regions outside the feature region 50 of the target layout, the target auxiliary pattern corresponding to the target layout can be obtained.

[0059] The auxiliary pattern generation method provided by the embodiments of the present disclosure can generate an optimized auxiliary pattern based on the feature region 50 in the target layout, and then copy the optimized auxiliary pattern to other regions outside the feature region 50, thereby improving the processing efficiency. At the same time, the optimized auxiliary pattern optimizes the target sub-pattern 14 with a size greater than the preset size in the initial auxiliary pattern, which can effectively avoid abnormal exposure due to the oversized auxiliary sub-pattern 12, that is, can effectively reduce or even eliminate the exposure risk of the auxiliary pattern, thereby improving the reliability of the auxiliary pattern, and facilitating the subsequent processing of the target layout by using the advanced resolution enhancement technology.

[0060] Please refer to the partial schematic view of the target layout in FIG. 2. The target layout includes a plurality of repeated patterns. The target layout is processed to obtain a feature region 50 including a repeated structure in the target layout. The repeated structure is that the entire target layout can be obtained by copying the feature region 50. The size of the feature region 50 in the present disclosure is not limited, and is usually determined according to the size of the target layout and application requirements.

[0061] The present disclosure first determines the feature region 50 of the target layout, and then forms an initial auxiliary pattern in the feature region 50. The initial auxiliary pattern includes a plurality of auxiliary sub-patterns 12. Then, the auxiliary sub-patterns 12 with a size exceeding the preset size in the initial auxiliary pattern are classified and screened out as target sub-patterns 14 according to the size, and the screened target sub-patterns 14 are optimized to obtain an optimized auxiliary pattern.

[0062] Please refer to Figure 3 In some embodiments of the present disclosure, the initial auxiliary pattern is formed in the feature region 50, including: determining a target pattern 40 to be formed in the target layout; and forming the initial auxiliary pattern in the feature region 50 according to the target pattern 40 by using the inverse lithography technology.

[0063] Inverse Lithography Technology (ILT) is a method to calculate the pattern on the mask based on the target pattern on the wafer. With the continuous shrinking of the critical dimension of integrated circuit manufacturing, the size of the lithography process window is an important indicator of the reliability and stability of semiconductor production. With the decrease of K1 factor of lithography process and the development of advanced resolution enhancement technology, ILT is used in many advanced process points. Compared with the traditional edge-cut moving optical proximity correction technology, ILT has a larger process window and smaller pattern edge placement error in lithography imaging.

[0064] Since ILT is based on pixelization, it has high degrees of freedom, and direct application to mask pattern correction requires a large amount of computing resources and processing time. Therefore, for a periodic pattern with repetitive structures, by identifying or capturing a feature area 50, the feature area 50 is corrected by ILT, and then the correction result is copied to other areas of the target pattern except the feature area 50, which can effectively solve the problem of insufficient computing resources due to the large size of the target pattern.

[0065] For example, the target pattern includes a plurality of regularly distributed mask patterns 30. By analyzing and simulating the mask patterns 30, a target pattern 40 to be formed is obtained. The repetitive structures in the target pattern 40 are extracted, and the size of the target pattern and the process requirements are combined to obtain a feature area 50. Based on ILT, an initial auxiliary pattern corresponding to the feature area 50 is obtained. Please refer to Figure 3 The initial auxiliary pattern includes a plurality of auxiliary sub-patterns 12.

[0066] In some embodiments of the present disclosure, the feature area 50 is determined in the target pattern, including: determining the mask pattern 30 of the target pattern and the pattern distribution of the mask pattern 30; dividing the mask pattern 30 into a plurality of pattern areas of the same size according to the pattern distribution, and taking the pattern area including any corner in the mask pattern 30 as the feature area 50.

[0067] When processing the target pattern, the mask pattern 30 of the target pattern is determined, which is used to form the target pattern 40. The mask pattern 30 of the target pattern and the pattern distribution of the mask pattern 30 are determined. For a target pattern with periodic regular distribution and repetitive structures, by analyzing the pattern distribution of the mask pattern 30, the area with repetitive structures is taken as the feature area 50.

[0068] For a target map with a periodic distribution, the initial auxiliary graphic shapes corresponding to the corners of the map are slightly different. Therefore, the feature region 50 of this disclosure needs to include the graphic regions at the corners. In conjunction with the preceding embodiments, the target graphic 40, i.e., the auxiliary graphic corresponding to the target map, is obtained by copying the auxiliary graphic corresponding to the feature region 50. Therefore, to improve processing efficiency and convenience, when determining the feature region 50, the target map is first divided into several graphic regions of the same size to facilitate the subsequent copying of auxiliary graphics.

[0069] Please refer to Figures 2(a) to 2(c). In some other embodiments of this disclosure, the optimized auxiliary graphic is copied to other areas outside the feature region 50 in the target layout to obtain the target auxiliary graphic corresponding to the target layout. This includes: copying the optimized auxiliary graphic to other graphic areas outside the feature region 50 according to the graphic distribution so that each graphic area has a corresponding optimized auxiliary graphic; and obtaining the target auxiliary graphic according to the optimized auxiliary graphic corresponding to each graphic area.

[0070] For example, firstly, a feature region 50 is determined in the target layout. As shown in Figure 2(a), the lower left corner of the target layout is designated as the feature region 50, and the region graphic of the feature region 50 is marked with a grid. Figure 2(b) shows the process of forming auxiliary graphics for the feature region 50. The optimized auxiliary graphics generated based on the feature region 50 are copied to other graphic regions outside the feature region 50, ensuring that each graphic region has a corresponding optimized auxiliary graphic. The target auxiliary graphic is obtained based on the optimized auxiliary graphics corresponding to each graphic region.

[0071] Since reverse lithography forms an initial auxiliary pattern based on the target pattern 40 and its distribution, this initial auxiliary pattern has a high degree of freedom. Among the auxiliary sub-patterns 12 in the initial auxiliary pattern, there may be auxiliary sub-patterns 12 that are too large.

[0072] like Figure 3 The initial auxiliary graphic formed by the feature region 50 shown includes several auxiliary sub-graphics 12. According to... Figure 3 The mask pattern 30 shown represents the main pattern on the target layout. The purpose of photolithography on the mask pattern 30 is to obtain the target pattern 40. Figure 3 Region A in the diagram indicates that the auxiliary sub-pattern 12 in this region is too large, which will cause abnormal exposure during photolithography and affect the reliability of the photolithography process.

[0073] Therefore, it is necessary to optimize the auxiliary sub-patterns 12 which do not meet the size requirement. In some specific embodiments of the present disclosure, the target sub-patterns 14 with sizes greater than the preset size are determined in each auxiliary sub-pattern 12, including: classifying each auxiliary sub-pattern 12 based on the size, and obtaining a category of auxiliary sub-patterns with lengths greater than the preset length as the target sub-patterns 14; and / or, classifying each auxiliary sub-pattern 12 based on the size, and obtaining a category of auxiliary sub-patterns with areas greater than the preset area as the target sub-patterns 14.

[0074] As shown in FIG. 1, the initial auxiliary pattern includes a plurality of auxiliary sub-patterns 12. The plurality of auxiliary sub-patterns 12 are screened and classified to obtain target sub-patterns 14 with sizes greater than a preset size. Figure 3

[0075] The specific classification criteria can be the length of the auxiliary sub-pattern 12, or the area of the auxiliary sub-pattern 12. For example, the auxiliary sub-pattern 12 with a length greater than a preset length is taken as the target sub-pattern 14, or the auxiliary sub-pattern 12 with an area greater than a preset area is taken as the target sub-pattern 14. The preset length and the preset area are determined according to whether it will cause abnormal exposure of the auxiliary pattern.

[0076] When the initial auxiliary pattern is generated based on the reverse lithography technology for the feature area 50, the initial auxiliary pattern will extend to the area outside the feature area 50. When the auxiliary pattern is copied for other pattern areas outside the target layout feature area 50, the auxiliary pattern corresponding to the feature area 50 is implemented.

[0077] Therefore, in some other embodiments, when the target auxiliary pattern is copied based on the optimized auxiliary pattern, there can also be interaction of the auxiliary patterns due to the copying process, resulting in auxiliary sub-patterns 12 with sizes greater than the preset size. For such auxiliary sub-patterns 12, optimization is also needed to avoid abnormal exposure in the target auxiliary pattern and improve the reliability of the target auxiliary pattern.

[0078] In another embodiment of the present disclosure, the target sub-pattern 14 is optimized to obtain an optimized auxiliary pattern, including: segmenting the target sub-pattern 14 with a size greater than the preset size to obtain a plurality of sub-pattern units with sizes less than or equal to the preset size, so that the sub-pattern units and the auxiliary sub-patterns 12 with sizes less than or equal to the preset size jointly constitute the optimized auxiliary pattern.

[0079] The target sub-pattern 14 with a size greater than the preset size is segmented to obtain a plurality of sub-pattern units meeting the preset size standard. The optimized auxiliary pattern is obtained according to the obtained sub-pattern units and the auxiliary sub-patterns 12 meeting the size requirement.

[0080] Please refer to Figure 4 ​An optimized schematic diagram of the target sub-graphic 14. For the segmentation of the target sub-graphic 14 with a length greater than a preset length, the target sub-graphic 14 is cut based on the length to obtain multiple sub-graphic units with a size less than or equal to the preset size. For the segmentation of the target sub-graphic 14 with an area greater than a preset area, the target sub-graphic 14 is segmented based on the area to obtain multiple sub-graphic units with a size less than or equal to the preset size.

[0081] The cutting of the target sub-graphic 14 can be achieved by dividing the feature region 50 into grid lines. The spacing between the cut sub-graphic units is based on improving the photolithography effect of the target layout and can be defined according to different application requirements.

[0082] Figure 5 The image shown is a schematic diagram after optimization of the initial auxiliary graphic. Please refer to [link / reference]. Figure 5 Part B is Figure 3 The auxiliary sub-graphic 12 corresponds to the optimized target sub-graphic 14 in part A. It can be seen that the optimization process cuts the target sub-graphic 14, resulting in several sub-graphic units with dimensions conforming to a preset size. Through the... Figure 5 The simulation of the shown graphic did not produce any exposure abnormalities caused by the excessive size of the auxiliary graphic.

[0083] It is understood that this embodiment does not limit the segmentation method of the target sub-graphic 14, as long as the target sub-graphic 14 is cut off and its size meets the preset size requirements.

[0084] Please see Figure 6 In some exemplary embodiments, an auxiliary graphics generation method is proposed, which may include the following steps 602 to 612.

[0085] Step 602: Determine the target map.

[0086] Step 604: Determine the mask pattern of the target map and the pattern distribution of the mask pattern. Divide the mask pattern into several pattern regions of the same size according to the pattern distribution. Take the pattern region in the mask pattern that includes any corner as the feature region.

[0087] The target map is divided into several regions of equal size, each containing the same repeating structure. Regions in the mask pattern that include arbitrary corners are designated as feature regions.

[0088] Step 606: Determine the target pattern to be formed in the target layout; based on the target pattern, form an initial auxiliary pattern in the feature area using reverse lithography. The initial auxiliary pattern includes several auxiliary sub-patterns.

[0089] Step 608: Classify each auxiliary sub-graphic based on size, and obtain a type of auxiliary sub-graphic with a length greater than a preset length as the target sub-graphic; and / or, classify each auxiliary sub-graphic based on size, and obtain a type of auxiliary sub-graphic with an area greater than a preset area as the target sub-graphic.

[0090] Step 610: Divide the target sub-graphics with a size greater than the preset size into multiple sub-graphics units with a size less than or equal to the preset size, so that the sub-graphics units and the auxiliary sub-graphics with a size less than or equal to the preset size together constitute the optimized auxiliary graphic.

[0091] Step 612: Copy the optimized auxiliary graphic to other graphic regions outside the feature region according to the graphic distribution, so that each graphic region has a corresponding optimized auxiliary graphic; obtain the target auxiliary graphic based on the optimized auxiliary graphic corresponding to each graphic region.

[0092] It should be noted that auxiliary sub-graphics 12, which may be larger than the preset size during the copying process, should also be segmented. The target auxiliary graphic corresponding to the target layout is obtained based on the optimized auxiliary graphics corresponding to all graphic regions.

[0093] Simulation of the target layout based on the target auxiliary graphic shows that the optimized auxiliary graphic reduces the risk of abnormal exposure. This disclosure, while basically preserving the basic position and size of the initial auxiliary graphic, divides the auxiliary sub-graphics 12 whose size does not meet the preset size requirements into sub-graphics units, effectively reducing and eliminating the risk of sub-resolution auxiliary graphic exposure, and making it more conducive to subsequent processing of the layout using advanced technologies.

[0094] Please see Figure 7 In some embodiments, the auxiliary graphic generation system includes a region determination device 702 and a graphic processing device 704. The region determination device 702 is configured to: determine a target layout and determine a feature region 50 within the target layout. The graphic processing device 704 is connected to the region determination device 702 and is configured to: form an initial auxiliary graphic in the feature region 50, the initial auxiliary graphic including a plurality of auxiliary sub-graphics 12; determine a target sub-graphic 14 with a size larger than a preset size among each auxiliary sub-graphic 12; optimize the target sub-graphic 14 to obtain an optimized auxiliary graphic; and copy the optimized auxiliary graphic to other regions outside the feature region 50 in the target layout to obtain a target auxiliary graphic corresponding to the target layout.

[0095] Furthermore, the graphics processing device 704 includes a graphics generation unit, a graphics classification unit, a graphics segmentation unit, and a graphics copying unit.

[0096] In some embodiments, the graphics generation unit is configured to: determine the target graphic 40 to be formed in the target layout; and form an initial auxiliary graphic in the feature region 50 according to the target graphic 40 using reverse lithography.

[0097] In some embodiments, the graphic classification unit is configured to: classify each auxiliary sub-graphic 12 based on size to obtain a type of auxiliary sub-graphic with a length greater than a preset length as the target sub-graphic 14; and / or, classify each auxiliary sub-graphic 12 based on size to obtain a type of auxiliary sub-graphic with an area greater than a preset area as the target sub-graphic 14.

[0098] In some embodiments, the graphic segmentation unit is configured to: segment the target sub-graphic 14 with a size greater than a preset size to obtain a plurality of sub-graphic units with a size less than or equal to the preset size, so that the sub-graphic units and the auxiliary sub-graphics 12 with a size less than or equal to the preset size together constitute an optimized auxiliary graphic.

[0099] In some embodiments, exemplary, the region determination device 702 is configured to: determine the mask pattern 30 of the target layout and the pattern distribution of the mask pattern 30; divide the mask pattern 30 into several pattern regions of the same size according to the pattern distribution, and take the pattern region of the mask pattern 30 including any corner as the feature region 50.

[0100] In some embodiments, the graphic copying unit is configured to: copy the optimized auxiliary graphic to other graphic regions outside the feature region 50 according to the graphic distribution, so that each graphic region has a corresponding optimized auxiliary graphic; and obtain the target auxiliary graphic according to the optimized auxiliary graphic corresponding to each graphic region.

[0101] In the auxiliary graphics generation systems provided in the above embodiments, the term "device" and the like used in this specification can be used to refer to computer-related entities, hardware, firmware, combinations of hardware and software, software, or software in execution. For example, "device" can be, but is not limited to, a process running on a processor, a processor, an object, an executable file, an execution thread, a program, and / or a computer. For example, "device" can be executed from various computer-readable media on which various data structures are stored. Furthermore, in the above embodiments provided in this disclosure, it should be understood that the disclosed "device" can be implemented in other ways. For example, the devices described above are merely illustrative. For example, the division of devices is merely a logical functional division, and in actual implementation, there may be other division methods, such as multiple devices can be combined or integrated into another device, or some features can be ignored or not executed. The described interconnections can be through some interfaces, indirect coupling or communication connections between devices, and can be electrical, mechanical, or other forms. Devices described separately may or may not be physically separate. Some or all of the devices can be selected to achieve the purpose of the embodiments of this disclosure according to actual needs.

[0102] In some embodiments, this disclosure also provides an electronic device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement the steps of the auxiliary graphics generation method involved in the above embodiments.

[0103] For example, the electronic device can be a terminal, and its internal structure diagram can be as follows: Figure 8 As shown.

[0104] This electronic device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage medium. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When the computer program is executed by the processor, it implements the aforementioned auxiliary graphics generation method. The display unit is used to form a visually visible image and can be a display screen, a projection device, or a virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the electronic device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the electronic device, or external keyboards, touchpads, or mice, etc.

[0105] Those skilled in the art will understand that Figure 8 The structure shown is merely a block diagram of a portion of the structure related to the present disclosure and does not constitute a limitation on the electronic device to which the present disclosure is applied. A specific electronic device may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0106] In some embodiments, this disclosure also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the auxiliary graphics generation steps involved in the above embodiments.

[0107] In some embodiments, this disclosure also provides a program product having a computer program stored thereon, which, when executed by a processor, implements the auxiliary graphics generation steps involved in the above embodiments.

[0108] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this disclosure can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this disclosure may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this disclosure may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0109] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features of the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0110] The embodiments described above are merely illustrative of several implementations of this disclosure, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this disclosure, and these all fall within the scope of protection of this disclosure. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. An auxiliary pattern generation method characterized by, The method comprises: determining a target layout and a feature region in the target layout; forming an initial auxiliary pattern in the feature region, the initial auxiliary pattern comprising a plurality of auxiliary sub-patterns; determining a target sub-pattern with a size greater than a preset size in each of the auxiliary sub-patterns; optimizing the target sub-pattern to obtain an optimized auxiliary pattern; copying the optimized auxiliary pattern to other regions outside the feature region in the target layout to obtain a target auxiliary pattern corresponding to the target layout.

2. The method of claim 1, wherein, The forming of the initial auxiliary pattern in the feature region comprises: determining a target pattern to be formed in the target layout; forming the initial auxiliary pattern in the feature region according to the target pattern by means of reverse photolithography.

3. The method of claim 1, wherein, The determining of the target sub-pattern with a size greater than a preset size in each of the auxiliary sub-patterns comprises: classifying each of the auxiliary sub-patterns based on size to obtain a first type of auxiliary sub-patterns with a length greater than a preset length as the target sub-patterns; and / or classifying each of the auxiliary sub-patterns based on size to obtain a second type of auxiliary sub-patterns with an area greater than a preset area as the target sub-patterns.

4. The method of claim 1, wherein, The optimization of the target sub-pattern to obtain an optimized auxiliary pattern comprises: segmenting the target sub-pattern with a size greater than a preset size to obtain a plurality of sub-pattern units with a size less than or equal to the preset size, so that the sub-pattern units and the auxiliary sub-patterns with a size less than or equal to the preset size jointly constitute the optimized auxiliary pattern.

5. The method of claim 1, wherein, The determining of the feature region in the target layout comprises: determining a mask pattern of the target layout and a pattern distribution of the mask pattern; dividing the mask pattern into a plurality of pattern regions with the same size according to the pattern distribution, and taking a pattern region including any corner in the mask pattern as the feature region.

6. The method of claim 5, wherein, The copying of the optimized auxiliary pattern to other regions outside the feature region in the target layout to obtain a target auxiliary pattern corresponding to the target layout comprises: copying the optimized auxiliary pattern to other pattern regions outside the feature region according to the pattern distribution, so that each of the pattern regions has a corresponding optimized auxiliary pattern; obtaining the target auxiliary pattern according to the corresponding optimized auxiliary pattern of each of the pattern regions.

7. An assisted graphics generation system characterized by comprising: The system comprises a region determining device and a pattern processing device; wherein, the region determining device is configured to determine a target layout and a feature region in the target layout; the pattern processing device, connected to the region determining device, is configured to form an initial auxiliary pattern in the feature region, the initial auxiliary pattern comprising a plurality of auxiliary sub-patterns; determine a target sub-pattern with a size greater than a preset size in each of the auxiliary sub-patterns; optimize the target sub-pattern to obtain an optimized auxiliary pattern; and copy the optimized auxiliary pattern to other regions outside the feature region in the target layout to obtain a target auxiliary pattern corresponding to the target layout. 8.An electronic device comprising a memory and a processor, the memory storing a computer program, wherein, The processor, when executing the computer program, implements the steps of the method of any one of claims 1 to 6.

9. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program, which when executed by a processor, implements the steps of the method of any one of claims 1 to 6.

10. A program product having stored thereon a computer program, characterized in that The computer program, which when executed by a processor, implements the steps of the method of any one of claims 1 to 6.

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