Design method of binary mask with three-dimensional structure, binary mask and manufacturing method

Abstract

The invention discloses a binary mask plate design method of a three-dimensional structure, a binary mask plate and a manufacturing method, and relates to the field of mask plate production and manufacturing. The method comprises the following steps: S1, designing a graphic unit of which the resolution is smaller than that of an exposure machine in the flat panel display industry on a binary mask; s2, according to the parameters of the target three-dimensional structure, the light transmission amount required by the corresponding plane pattern on the binary mask is inversely calculated; s3, calculating the pattern unit arrangement density of each array small unit according to the light transmittance requirement; and S4, generating coordinates corresponding to each pattern unit according to the pattern unit arrangement density, and generating a gds pattern file required by photoetching. According to the invention, a micro three-dimensional structure is formed on the large-size panel display glass by using an optical diffraction principle. The method is simple, does not need to add special equipment, is compatible with an existing panel display exposure process, solves the problems that a traditional three-dimensional graph is low in manufacturing efficiency, high in cost and limited in size, enriches the optical design selection of the panel display industry, and has remarkable practical value and popularization prospects.

Description

Technical Field

[0001] This invention relates to the field of photomask manufacturing, specifically to a three-dimensional binary photomask design method, a binary photomask, and a manufacturing method thereof. Background Technology

[0002] Masks, as crucial tools for micro- and nano-scale pattern transfer, are widely used in various industries such as semiconductors, display panels, FPC circuit boards, and equipment manufacturing. Among them, binary masks, in traditional applications, primarily achieve 1:1 or 1:4 scale pattern imaging. Their core function is limited to pattern replication and transfer; downstream customers can only use them to create planar patterns and cannot directly generate three-dimensional graphics.

[0003] In existing technologies, obtaining 3D graphics requires first creating a 3D mask, which is then transferred using nanoimprinting. However, current lithography machines for creating 3D masks are primarily used in the semiconductor industry, with a maximum supported size of only 9 inches, which is insufficient to meet the demands of the flat panel display industry for glass sizes (typically 1500mm and above). Directly applying semiconductor industry 3D masks to the creation of 3D graphics for flat panel display glass presents the following drawbacks:

[0004] First, it is extremely inefficient, with a limited area produced per batch, making it difficult to meet the production needs of large-size glass.

[0005] Secondly, the cost is high. Not only is the production cost of the 3D mask itself high, but the nanoimprinting process also requires the purchase of special equipment such as imprinting machines and demolding machines.

[0006] Third, there is a lack of process compatibility. The exposure processes of existing flat panel display factories cannot be directly adapted, requiring a large amount of new capital to purchase equipment and build dedicated production lines, resulting in extremely high economic and time costs.

[0007] After a three-dimensional graphic structure is formed on the flat panel display glass, a metasurface optical structure can be constructed. Various dimming effects can be achieved through microprisms, microlenses, microreflections, and other methods, greatly enriching the optical performance and application scenarios of flat panel display products.

[0008] Therefore, there is an urgent need for a technical solution that is compatible with existing flat panel display manufacturing processes, requires no large additional investment, and can efficiently form three-dimensional structures on large-size flat panel display glass. Summary of the Invention

[0009] The purpose of this invention is to overcome the shortcomings of the prior art and provide a binary mask design method, binary mask and manufacturing method for a three-dimensional structure. This technology can form micro three-dimensional structures on large-size flat panel display glass without increasing the cost of existing equipment and while being compatible with existing exposure processes. It provides a low-cost, high-efficiency and highly compatible three-dimensional structure technology solution for the flat panel display industry, which has significant industrial value and broad application prospects.

[0010] This invention is achieved through the following technical solution:

[0011] In a first aspect, the present invention provides a method for designing a three-dimensional binary mask graphic, comprising the following steps:

[0012] S1. Design graphic units on a binary photomask with a resolution smaller than that of exposure machines in the flat panel display industry;

[0013] S2. Calculate the required amount of light transmission for the corresponding planar pattern on the binary mask based on the parameters of the target three-dimensional structure.

[0014] S3. Based on the light transmittance requirements, calculate the graphic unit arrangement density of each array unit;

[0015] S4. Generate the coordinates of each graphic unit according to the arrangement density of the graphic units, and finally generate the GDS image file required for photolithography.

[0016] Furthermore, in this invention, the aforementioned target three-dimensional structure is one or more combinations of a cylindrical convex mirror structure, a microprism structure, a microlens structure, or a microreflection structure.

[0017] Furthermore, in this invention, when calculating the light transmittance in step S2 above, it is necessary to first calculate the geometric parameters corresponding to each plane point on the target three-dimensional structure, and then determine the transmittance of each point in combination with the type of adhesive applied to the flat panel display glass.

[0018] Furthermore, in this invention, when the adhesive used is a negative adhesive, the transmittance calculation formula is: T% = T1% + (T'% - T1%) * Y / N.

[0019] Where T'% is the transmittance at the highest point of the arch.

[0020] T1% is the transmittance at the edge point.

[0021] Y represents the arch height at the corresponding point in the plane.

[0022] N is the number of steps in the transmittance change, and N = P / 2S.

[0023] P represents the width of a single dimension of the target three-dimensional structure.

[0024] S represents the size of the graphic unit.

[0025] Furthermore, in this invention, the arrangement density of the graphic units in step 3 above is positively correlated with the amount of light transmission; that is, the higher the amount of light transmission, the greater the proportion of light-transmitting graphic units in the corresponding area.

[0026] Furthermore, in this invention, the size of the aforementioned graphic unit is submicron and not greater than 1 / 2 of the resolution of an exposure machine in the flat panel display industry.

[0027] Secondly, the present invention also provides a binary photomask, which is manufactured using the aforementioned three-dimensional binary photomask design method, and the binary photomask is used to form a three-dimensional structure on a large-size flat panel display glass.

[0028] Thirdly, the present invention also provides a method for fabricating a three-dimensional structure of a large-size flat panel display glass, wherein the binary mask is introduced into a mask lithography machine for photolithography, and then exposed and developed by an exposure machine in a flat panel display factory to form a corresponding three-dimensional structure on the flat panel display glass.

[0029] Furthermore, in this invention, the size of the aforementioned flat panel display glass is not less than 1500mm.

[0030] Furthermore, in this invention, the width of a single dimension of the aforementioned three-dimensional structure is on the order of micrometers to millimeters.

[0031] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0032] This invention utilizes a special graphic design of a planar binary photomask to create three-dimensional structures on large-size flat panel display glass using the principle of optical diffraction. This eliminates the need for a dedicated three-dimensional photomask, completely solving the size limitation problem of traditional three-dimensional photomasks and adapting to the production needs of large-size glass (1500mm and above) in the flat panel display industry. This invention is compatible with existing exposure processes in flat panel display factories, eliminating the need for additional purchases of specialized equipment such as imprinting machines and stripping machines, as well as the need to rebuild production lines, significantly reducing equipment investment and process modification costs for enterprises. The graphic design method of this invention has a clear process and controllable parameters. Parameters such as the size and density of graphic units can be flexibly adjusted according to different target three-dimensional structures, making it highly applicable and easy for large-scale production and widespread application. Attached Figure Description

[0033] The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and form part of this application, do not constitute a limitation thereof. In the drawings:

[0034] Figure 1 This is a schematic diagram illustrating the calculation of the arch height position corresponding to each plane point X in this invention;

[0035] Figure 2 This is a schematic diagram illustrating the calculation of the transmittance value corresponding to point X in this invention;

[0036] Figure 3 This is a schematic diagram illustrating the generation of a corresponding number of translucent graphic units on each column of graphics in this invention;

[0037] Figure 4 This is a schematic diagram illustrating the generation of the corresponding GDS graphic in this invention;

[0038] Figure 5 This is a schematic diagram of a planar binary photomask fabricated in this invention;

[0039] Figure 6 This is a schematic diagram of the three-dimensional cylindrical convex mirror array in this invention;

[0040] Figure 7 This is a schematic diagram of the exposure and development process in this invention. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the embodiments and accompanying drawings. The illustrative embodiments and descriptions of the present invention are only used to explain the present invention and are not intended to limit the present invention.

[0042] The following detailed description of embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the invention without inventive effort are within the scope of protection of the invention.

[0043] Example 1

[0044] This embodiment 1 provides a method for designing a three-dimensional binary mask graphic, which specifically includes the following steps:

[0045] S1. Graphic Unit Design: Graphic units are designed on a binary mask. The size of the graphic units is smaller than the resolution of exposure machines in the flat panel display industry and is at the sub-micron level, ensuring that the optical diffraction effect can effectively achieve the formation of the three-dimensional structure.

[0046] S2. Light transmittance calculation: First, based on the specific parameters of the target three-dimensional structure (such as size, curvature, etc.), calculate the geometric parameters (such as arch height) corresponding to each plane point on the three-dimensional structure; then, combined with the type of adhesive applied to the flat panel display glass (positive adhesive or negative adhesive), determine the light transmittance requirements corresponding to each plane point.

[0047] S3. Calculation of arrangement density: Based on the light transmittance requirement obtained in step S2, calculate the arrangement density of graphic units in each array unit. The higher the light transmittance, the larger the proportion of light-transmitting graphic units in the corresponding area, so as to achieve a gradient change in light transmittance through the density difference of graphic units.

[0048] S4.gds image generation: Based on the calculated density of graphic unit arrangement, the precise coordinates of each graphic unit are generated, thereby generating the gds image required for the photolithography process, providing data support for the fabrication of binary photomasks.

[0049] Furthermore, when the target three-dimensional structure is a cylindrical convex mirror structure, the relevant parameters are calculated and the light transmittance is determined as follows:

[0050] In this embodiment 1, combined with Figure 1 As shown, let the width (pitch) of a single cylindrical convex mirror be P, the radius of curvature be R, and the arch height corresponding to any plane point X be Y. The formula for calculating this height is: Y = (R² - X²) 1 / 2 -(R²-1 / 4*P²) 1 / 2 .

[0051] For example, to form a cylindrical convex mirror structure on the G6 generation flat panel display glass, assuming that the width (pitch) of a single dimension of the cylindrical convex mirror is P and the radius of curvature is R, the arch height position corresponding to each plane point X can be calculated and set as Y, Y=(R2-X2)1 / 2-(R2-1 / 4*P2)1 / 2.

[0052] Combination Figure 2 As shown, the transmittance parameters are set according to the type of adhesive applied to the flat panel display glass. If it is a negative adhesive, the transmittance of the highest point Y' is set to T'%, and the transmittance of the edge points Y1 and Y2 is set to T1%. Based on the size S of the graphic unit, the transmittance variation step N of the entire lens area is determined, N = P / (2S).

[0053] Then the transmittance value corresponding to the plane point X is T% = T1% + (T'% - T1%) * Y / N.

[0054] Based on the transmittance T% requirement, the proportion of light-transmitting image units in the corresponding area is set, and then the corresponding number of light-transmitting units are randomly generated within the length range of the cylindrical convex lens.

[0055] For example, the target three-dimensional structure: a cylindrical convex mirror array, where the pitch of a single cylindrical convex mirror is P=200μm, the radius of curvature is R=200μm, and the length is 200μm;

[0056] For example, the parameters of a binary photomask: the minimum image unit size of a binary photomask lithography machine is S = 0.5 * 0.5 μm (i.e., the image unit size is S = 0.5 μm);

[0057] For example, the type of photoresist coating: negative photoresist is coated on the flat panel display glass. The loss of photoresist after development is negligible. Therefore, the transmittance at the highest point of the dome is set to T'%=100%, and the transmittance at the edge point is set to T1%=0%.

[0058] Arch height calculation: Based on the parameters of the cylindrical convex mirror, the arch height is calculated using the formula Y=(R²-X²). 1 / 2 -(R²-1 / 4*P²) 1 / 2 Calculate the arch height Y corresponding to different plane points X.

[0059] When X = -100 μm, Y = (200² - (-100)²) 1 / 2 -(200²-(1 / 4)*200²) 1 / 2

[0060] =(40000-10000) 1 / 2 -(40000-10000) 1 / 2 =30000 1 / 2 -30000 1 / 2 =0μm;

[0061] When X = -99.5 μm, Y = (200² - (-99.5)²). 1 / 2 -(200²-(1 / 4)*200²) 1 / 2

[0062] =(40000-9900.25) 1 / 2 -30000 1 / 2 =30099.75 1 / 2 -30000 1 / 2 ≈173.493-173.205≈0.288μm;

[0063] When X = -99 μm, Y = (200² - (-99)²) 1 / 2 -30000 1 / 2

[0064] =(40000-9801) 1 / 2 -173.205=30199 1 / 2 -173.205≈173.778-173.205≈0.573μm;

[0065] And so on, until X = 0 μm, Y = (200² - 0²) 1 / 2 -(200²-(1 / 4)*200²) 1 / 2 =200-30000 1 / 2 ≈200-173.205≈26.795μm (i.e., the highest point of the arch, Y');

[0066] Correspondingly, when X = 0.5μm, 1μm, ..., 100μm, the arch height Y is the same as the arch height when X = -0.5μm, -1μm, ..., -100μm.

[0067] Transmittance variation steps and transmittance calculation:

[0068] The transmittance variation step N = P / (2S) = 200 / (2*0.5) = 200 steps;

[0069] According to the formula for calculating the transmittance of negative adhesive, T%=T1%+(T'%-T1%)*Y / Y', substituting T1%=0% and T'%=100%, we can get T%=(Y / Y')*100%.

[0070] When X = -100 μm, Y = 0 μm, T% = (0 / 26.795) * 100% = 0.0%;

[0071] When X = -99.5 μm, Y ≈ 0.288 μm, T% = (0.288 / 26.795) * 100% ≈ 1.1%;

[0072] When X = -99 μm, Y ≈ 0.573 μm, T% = (0.573 / 26.795) * 100% ≈ 2.1%;

[0073] When X = -98.5 μm, Y ≈ 0.857 μm, T% = (0.857 / 26.795) * 100% ≈ 3.2%;

[0074] ...

[0075] When X = 0 μm, Y ≈ 26.795 μm, T% = (26.795 / 26.795) * 100% = 100.0%;

[0076] Correspondingly, the transmittance when X is positive is equal to the transmittance when X is negative.

[0077] Based on the above algorithm, the transmittance of each column of graphics is listed in the table below:

[0078] N X Y Transmittance T / CCC 0 -100 0 0.0% 1 -99.5 0.287714483 1.1% 2 -99 0.573514012 2.1% 3 -98.5 0.857408022 3.2% 4 -98 1.139405821 4.3% 5 -97.5 1.419516594 5.3% 6 -97 1.697749409 6.3% 7 -96.5 1.974113213 7.4% 8 -96 2.248616839 8.4% 9 -95.5 2.521269003 9.4% 10 -95 2.792078311 10.4% …… …… …… …… 199 -0.5 26.79429424 100.0% 200 0 26.79491924 100.0% 199 0.5 26.79429424 100.0% …… …… …… …… 10 95 2.792078311 10.4% 9 95.5 2.521269003 9.4% 8 96 2.248616839 8.4% 7 96.5 1.974113213 7.4% 6 97 1.697749409 6.3% 5 97.5 1.419516594 5.3% 4 98 1.139405821 4.3% 3 98.5 0.857408022 3.2% 2 99 0.573514012 2.1% 1 99.5 0.287714483 1.1% 0 100 0 0.0%

[0079] In this embodiment 1, as Figure 3 As shown, based on the transmittance ratio, a corresponding number of light-transmitting graphic units are generated on each column of graphics.

[0080] In this embodiment 1, as Figure 3As shown, based on the transmittance T% of each column of graphics (corresponding to different X values) calculated above, the proportion of light-transmitting graphic units in each column is determined. For example, when the transmittance is 1.1%, the number of light-transmitting graphic units in that column accounts for 1.1% of the total number of graphic units in that column; when the transmittance is 2.1%, the proportion of light-transmitting graphic units is 2.1%, and so on.

[0081] Within the length (200μm) of the cylindrical convex mirror, a corresponding number of light-transmitting pattern units (with dimensions of 0.5*0.5μm) are randomly generated according to the above proportion of light-transmitting pattern units.

[0082] Accurately record the coordinate position of each light-transmitting pattern unit on the binary photomask to ensure that the arrangement density meets the transmittance requirements.

[0083] In this embodiment 1, as Figure 4 As shown, based on the coordinate data of all the light-transmitting graphic units, a complete GDS file required for photolithography is generated. This file contains all the graphic information of a single cylindrical convex lens.

[0084] In this embodiment 1, as Figure 5 As shown, according to the required graphic area on the G6 generation flat panel display glass, the graphics of individual cylindrical convex lenses are arranged in an array to form a GDS image file of the cylindrical convex lens array.

[0085] In this embodiment 1, combined with Figure 6 and Figure 7 As shown, the GDS image file is imported into a photomask lithography machine for photolithography fabrication to obtain a planar binary photomask. The flat panel display factory installs the fabricated planar binary photomask onto an exposure machine; the G6 generation flat panel display glass coated with negative photoresist is exposed, utilizing the transmittance differences in different areas of the binary photomask to expose the photoresist to different intensities of light; after exposure, a development process is performed, where more of the un-illuminated areas (corresponding to low transmittance areas) of photoresist are retained, and less of the illuminated areas (corresponding to high transmittance areas) are retained, ultimately forming a three-dimensional cylindrical convex mirror array structure consistent with the design on the flat panel display glass.

[0086] Example 2

[0087] This embodiment provides a binary photomask, which is manufactured using the three-dimensional binary photomask design method in Embodiment 1. The binary photomask is used to form a three-dimensional structure on a large-size flat panel display glass.

[0088] Example 3

[0089] This embodiment provides a method for fabricating a three-dimensional structure of a large-size flat panel display glass. It employs the binary photomask method described in Embodiment 1 for photolithography, followed by exposure and development processes using an exposure machine in a flat panel display factory to form the corresponding three-dimensional structure on the flat panel display glass. The size of the flat panel display glass is not less than 1500 mm. The width of a single dimension of the three-dimensional structure is in the micrometer to millimeter range.

[0090] The technical solution of this invention successfully formed a cylindrical convex mirror array with a period of 200μm, a radius of curvature of 200μm, and a length of 200μm on a G6 generation large-size flat panel display glass. This three-dimensional structure exhibits excellent forming effect, stable optical performance, and can achieve the expected dimming function. The entire fabrication process is fully compatible with existing flat panel display manufacturing processes, requiring no additional specialized equipment. Production efficiency is significantly improved compared to traditional nanoimprinting methods, while production costs are reduced, fully verifying the feasibility and superiority of this invention.

[0091] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for designing a three-dimensional binary photomask pattern, characterized in that, The method comprises the following steps: S1, designing a graphic unit smaller than the resolution of an exposure machine in the flat panel display industry on a binary mask; S2, calculating the required light transmission amount of a corresponding planar graphic on the binary mask according to the parameters of the target three-dimensional structure; S3, calculating the arrangement density of the graphic unit of each array small unit according to the light transmission amount requirement; S4, generating the coordinates corresponding to each graphic unit according to the arrangement density of the graphic unit, and finally generating the gds file required for photolithography.

2. The method of claim 1, wherein The target three-dimensional structure is one or a combination of cylindrical convex mirror structure, micro-prism structure, micro-lens structure, or micro-reflection structure.

3. The method of claim 1, wherein the method further comprises: In the step S2, the light transmission amount is calculated by first calculating the geometric parameters corresponding to each planar point on the target three-dimensional structure, and then determining the transmittance of each point in combination with the type of glue coating on the flat panel display glass.

4. The method of claim 3, wherein the method further comprises: When the glue coating is negative glue, the transmittance calculation formula is: T%=T1%+(T'%-T1%)*Y / N, where T' is the transmittance of the highest point of the arch, T1% is the transmittance of the edge point, Y is the arch height of the corresponding planar point, N is the number of transmittance change steps, and N=P / 2S, P is the single dimension width of the target three-dimensional structure, S is the size of the graphic unit.

5. The method of claim 1, wherein The arrangement density of the graphic unit in step 3 is positively correlated with the light transmission amount, that is, the higher the light transmission amount, the greater the proportion of the light transmission graphic unit in the corresponding area.

6. The method of claim 1, wherein The size of the graphic unit is sub-micron, and is not greater than 1 / 2 of the resolution of the exposure machine in the flat panel display industry.

7. A binary mask characterized in that, The binary mask pattern design method of the three-dimensional structure according to any one of claims 1-6 is used to manufacture the binary mask for forming a three-dimensional structure on a large-size flat panel display glass.

8. A method for making a three-dimensional structure of a large-sized flat panel display glass, the method comprising the steps of: The binary mask of claim 7 is introduced into a mask photolithography machine for photolithography manufacturing, and then exposed and developed by an exposure machine in a flat panel display factory to form a corresponding three-dimensional structure on the flat panel display glass. ​ 9. The method of manufacturing according to claim 8, wherein, The size of the flat panel display glass is not less than 1500mm.

10. The method of manufacturing according to claim 8, wherein, The single dimension width of the three-dimensional structure is micron to millimeter.

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