Laser direct writing type photoetching optimization method and system based on microlens array homogenizer

Abstract

The invention provides a laser direct writing type photoetching optimization method and system based on a microlens array homogenizer, and the method comprises the steps: processing a parameter of a first laser beam through a photoetching imaging model, and obtaining a first space image result; performing homogenization treatment on the first laser beam by using a homogenizer model based on a micro-lens array to obtain a homogenized second laser beam; processing the parameters of the second laser beam by using the photoetching imaging model to obtain a second space image result; respectively processing the first space image result and the second space image result by utilizing a photoresist model to obtain a first photoresist developing result and a second photoresist developing result; respectively carrying out edge placement error calculation on the first photoresist development result and the second photoresist development result and the development result of the target pattern to obtain an error calculation result; and determining the homogenizer model based on the microlens array as an optimized homogenizer model under the condition that the error calculation result meets a preset condition.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of high-resolution imaging system image quality optimization, and more particularly, to a laser direct writing photolithography optimization method, system and electronic device based on a microlens array homogenizer. BACKGROUND

[0002] A photolithography machine is an important device in semiconductor production and manufacturing, and is widely used in large-scale integrated circuit manufacturing. A photolithography process copies a target pattern to a photoresist coated on a wafer surface through optical exposure, and then further transfers the pattern to the wafer through development, etching and other processes. The photolithography process directly determines the feature size in an integrated circuit device, and is a key process in large-scale integrated circuit manufacturing.

[0003] Laser direct writing photolithography technology is a photolithography technology that controls the direct exposure of a laser beam on a photoresist by changing the focus position, and can also be referred to as maskless photolithography technology. The purpose of transferring an arbitrary pattern is achieved through continuous writing. Laser direct writing photolithography can effectively improve the photolithography precision due to its high flexibility and the ability to avoid random errors caused by multiple etching in traditional mask processes.

[0004] However, the exposure result is largely affected by the non-uniform distribution of the light field intensity of the laser beam, which can lead to wafer rework and increase costs. SUMMARY

[0005] To solve at least one of the technical problems in the prior art, embodiments of the present disclosure provide a laser direct writing photolithography optimization method, system and electronic device based on a microlens array homogenizer, which can improve the uniformity of the light field intensity distribution of the laser beam and achieve optimization of the photolithography result.

[0006] The embodiment of the present disclosure provides a laser direct writing type photoetching optimization method based on a microlens array homogenizer, which comprises the following steps: processing parameters of a first laser beam by using a photoetching imaging model to obtain a first spatial image result, wherein the first spatial image result is used to represent exposure energy distribution of the first laser beam on a photoresist; performing homogenization processing on the first laser beam by using a microlens array based homogenizer model to obtain a second laser beam after homogenization, wherein the microlens array based homogenizer model comprises a first microlens array, a second microlens array and a focusing lens arranged in sequence, the first microlens array and the second microlens array are the same, the second microlens array is located on the back focal plane of the first microlens array and coincides with the front focal plane of the focusing lens; processing parameters of the second laser beam by using the photoetching imaging model to obtain a second spatial image result, wherein the second spatial image result is used to represent exposure energy distribution of the second laser beam on the photoresist; processing the first spatial image result and the second spatial image result by using a photoresist model to obtain a first photoresist development result corresponding to the first spatial image result and a second photoresist development result corresponding to the second spatial image result; performing edge placement error calculation on the first photoresist development result and the second photoresist development result and a development result of a target pattern respectively to obtain error calculation results; and determining the microlens array based homogenizer model as an optimized microlens array based homogenizer model in the case that the error calculation results meet predetermined conditions.

[0007] According to some embodiments of the present disclosure, the photoetching imaging model is constructed by the following operations: obtaining an exposure time based on a step length and a laser pulse time of an input laser beam; obtaining an exposure dose based on the exposure time and an intensity distribution of the input laser beam; obtaining an initial photoetching imaging model based on the exposure time and the exposure dose; and adjusting model parameters of the initial photoetching imaging model to obtain the photoetching imaging model according to a predetermined target pattern.

[0008] According to some embodiments of the present disclosure, the photoresist model is constructed by the following operations: obtaining a light intensity distribution of the input laser beam after diffusion based on diffusion conditions of photoacid of the photoresist in an exposure process; obtaining an initial photoresist model based on the light intensity distribution of the input laser beam after diffusion and the exposure dose; and adjusting model parameters of the initial photoresist model to obtain the photoresist model according to the predetermined target pattern.

[0009] According to some embodiments of the present disclosure, the above-mentioned homogenization of the first laser beam by using the homogenizer model based on the microlens array includes: processing the first laser beam by using the first microlens array to obtain the first laser beam with the first homogenized light field distribution; processing the first laser beam with the first homogenized light field distribution by using the second microlens array to obtain the first laser beam with the second homogenized light field distribution; converging the first laser beam with the second homogenized light field distribution by using the focusing lens to obtain the second laser beam based on Fourier transform.

[0010] According to some embodiments of the present disclosure, the above-mentioned processing of the first laser beam by using the first microlens array to obtain the first laser beam with the first homogenized light field distribution includes: obtaining the complex amplitude transmittance of the first microlens array based on the refractive index, the center thickness, the focal length and the aperture side length of each sub-microlens in the first microlens array; and based on the complex amplitude transmittance of the first microlens array, the first laser beam undergoes the first Fresnel diffraction to obtain the first laser beam with the first homogenized light field distribution.

[0011] According to some embodiments of the present disclosure, the light field of the first laser beam with the first homogenized light field distribution is represented by the following formula: ; wherein, represents the complex amplitude transmittance of the first microlens array, represents the wavelength of the first laser beam, j 2 =-1, k= f represents the focal length of each sub-microlens in the first microlens array, represents the position of the first microlens array in the first direction, represents the position of the first microlens array in the second direction, represents the position of the second microlens array in the first direction, represents the position of the second microlens array in the second direction, and the first direction and the second direction are orthogonal to each other.

[0012] According to some embodiments of the present disclosure, the above-mentioned processing of the first laser beam with the first homogenized light field distribution by using the second microlens array to obtain the first laser beam with the second homogenized light field distribution includes: obtaining the complex amplitude transmittance of the second microlens array based on the refractive index, the center thickness, the focal length and the aperture side length of each sub-microlens in the second microlens array; and based on the complex amplitude transmittance of the second microlens array, the first laser beam with the first homogenized light field distribution undergoes the second Fresnel diffraction to obtain the first laser beam with the second homogenized light field distribution.

[0013] According to some embodiments of the present disclosure, the light field of the first laser beam after the second light field distribution homogenization is represented by the following formula: ; wherein, represents the light field of the first laser beam after the first light field distribution homogenization, represents the complex amplitude transmittance of the second microlens array.

[0014] According to some embodiments of another aspect of the present disclosure, a laser direct writing photolithography optimization system based on a microlens array homogenizer is provided, which is suitable for implementing the above-mentioned laser direct writing photolithography optimization method based on a microlens array homogenizer. The laser direct writing photolithography optimization system based on a microlens array homogenizer comprises: a first processing module configured to process parameters of a first laser beam by using a photolithography imaging model to obtain a first aerial image result, wherein the first aerial image result is used to represent an exposure energy distribution of the first laser beam on a photoresist; a second processing module configured to homogenize the first laser beam by using a homogenizer model based on a microlens array to obtain a second laser beam after homogenization, wherein the homogenizer model based on a microlens array comprises a first microlens array, a second microlens array and a focusing lens arranged in sequence, the first microlens array and the second microlens array are the same, the second microlens array is located on the back focal plane of the first microlens array and coincides with the front focal plane of the focusing lens; a third processing module configured to process parameters of the second laser beam by using the photolithography imaging model to obtain a second aerial image result, wherein the second aerial image result is used to represent an exposure energy distribution of the second laser beam on the photoresist; a fourth processing module configured to process the first aerial image result and the second aerial image result by using a photoresist model to obtain a first photoresist development result corresponding to the first aerial image result and a second photoresist development result corresponding to the second aerial image result; a calculation module configured to perform edge placement error calculation on the first photoresist development result and the second photoresist development result and a development result of a target pattern to obtain an error calculation result; and a determination module configured to determine the homogenizer model based on a microlens array as an optimized homogenizer model based on a microlens array when the error calculation result meets a predetermined condition.

[0015] According to some embodiments of another aspect of the present disclosure, an electronic device is provided, which comprises: one or more processors; a storage device configured to store one or more programs, wherein when the one or more programs are executed by the one or more processors, the one or more processors are caused to perform the above-mentioned laser direct writing photolithography optimization method based on a microlens array homogenizer.

[0016] According to the laser direct writing type photoetching optimization method, system and electronic equipment based on the microlens array homogenizer according to the embodiment of the present disclosure, the parameters of the first laser beam are processed by using a photoetching imaging model to obtain a first spatial image result, the first spatial image result is used to represent the exposure energy distribution of the first laser beam on the photoresist, the first laser beam is homogenized by using a homogenizer model based on a microlens array to obtain a second laser beam after homogenization, which can improve the uniformity of the light field intensity distribution of the laser beam, the homogenizer model based on the microlens array includes a first microlens array, a second microlens array and a focusing lens arranged in sequence, the first microlens array and the second microlens array are the same, the second microlens array is located on the back focal plane of the first microlens array and coincides with the front focal plane of the focusing lens, the parameters of the second laser beam are processed by using the photoetching imaging model to obtain a second spatial image result, the second spatial image result is used to represent the exposure energy distribution of the second laser beam on the photoresist, the first spatial image result and the second spatial image result are processed by using a photoresist model respectively to obtain a first photoresist development result corresponding to the first spatial image result and a second photoresist development result corresponding to the second spatial image result, the edge placement error calculation is performed on the first photoresist development result and the second photoresist development result respectively and the development result of the target pattern to obtain an error calculation result, in the case that the error calculation result meets a predetermined condition, the homogenizer model based on the microlens array is determined as an optimized homogenizer model based on the microlens array, and the optimization of the photoetching result is realized. BRIEF DESCRIPTION OF DRAWINGS

[0017] The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments of the present disclosure taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 is a flowchart of a laser direct writing type photoetching optimization method based on a microlens array homogenizer according to an illustrative embodiment of the present disclosure;

[0019] Figure 2 is a schematic diagram of a homogenizer model based on a microlens array according to an illustrative embodiment of the present disclosure;

[0020] Figure 3 is a flowchart of constructing a photoetching imaging model according to an illustrative embodiment of the present disclosure;

[0021] Figure 4 is a flowchart of constructing a photoresist model according to an illustrative embodiment of the present disclosure;

[0022] Figure 5 is a flowchart of obtaining a second laser beam after homogenization according to an illustrative embodiment of the present disclosure;

[0023] Figure 6This is a flowchart illustrating an embodiment of the present disclosure of obtaining a first laser beam after the first light field distribution homogenization;

[0024] Figure 7 This is a diagram showing the light intensity distribution and homogenization result of each element in a homogenizer model based on a microlens array during the process of obtaining a homogenized second laser beam according to an illustrative embodiment of this disclosure.

[0025] Figure 8 This is a flowchart illustrating a schematic embodiment of the present disclosure of obtaining the first laser beam after the second light field distribution homogenization;

[0026] Figure 9 This is a development result diagram of a target pattern according to an illustrative embodiment of the present disclosure;

[0027] Figure 10 This is a first photoresist development result diagram according to an illustrative embodiment of the present disclosure;

[0028] Figure 11 This is a second photoresist development result diagram according to an illustrative embodiment of the present disclosure;

[0029] Figure 12 This is a block diagram of a laser direct-write lithography optimization system based on a microlens array homogenizer according to an illustrative embodiment of the present disclosure;

[0030] Figure 13 This is a block diagram of an electronic device based on a laser direct-write lithography optimization method using a microlens array homogenizer according to an illustrative embodiment of the present disclosure.

[0031] In the accompanying drawings, the meanings of the reference numerals are as follows:

[0032] 1. Laser;

[0033] 2. First microlens array;

[0034] 3. Second microlens array;

[0035] 4. Focusing lens. Detailed Implementation

[0036] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0037] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0038] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0039] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).

[0040] To address the issue of lithography deviations caused by uneven light field intensity distribution of a laser beam, according to one aspect of the present invention, a lithography imaging model is used to process the parameters of a first laser beam to obtain a first spatial image. This first spatial image characterizes the exposure energy distribution of the first laser beam on the photoresist. A homogenizer model based on a microlens array is then used to homogenize the first laser beam, resulting in a homogenized second laser beam. This improves the uniformity of the light field intensity distribution of the laser beam. The homogenizer model based on a microlens array includes a first microlens array, a second microlens array, and a focusing lens arranged sequentially. The first and second microlens arrays are identical, and the second microlens array is located on the back focal plane of the first microlens array and is adjacent to the focusing lens. The front focal planes coincide, and the parameters of the second laser beam are processed using a photolithography imaging model to obtain a second spatial image result. The second spatial image result is used to characterize the exposure energy distribution of the second laser beam on the photoresist. The first spatial image result and the second spatial image result are processed using a photoresist model to obtain a first photoresist development result corresponding to the first spatial image result and a second photoresist development result corresponding to the second spatial image result. The first photoresist development result and the second photoresist development result are compared with the development result of the target pattern to calculate the edge placement error and obtain the error calculation result. If the error calculation result meets the predetermined conditions, the homogenizer model based on the microlens array is determined as the optimized homogenizer model based on the microlens array, thereby optimizing the photolithography result.

[0041] Figure 1This is a flowchart of a laser direct-write lithography optimization method based on a microlens array homogenizer according to an illustrative embodiment of the present disclosure.

[0042] According to embodiments of this disclosure, such as Figure 1 As shown, a laser direct-write lithography optimization method based on a microlens array homogenizer is provided, including the following steps S1 to S6.

[0043] Step S1: Process the parameters of the first laser beam using the photolithography imaging model to obtain the first spatial image result.

[0044] According to embodiments of this disclosure, the first spatial image result is used to characterize the exposure energy distribution of the first laser beam on the photoresist.

[0045] According to embodiments of this disclosure, the light field intensity of the first laser beam has a Gaussian distribution, and the light field intensity distribution of the first laser beam is... It can be expressed by the following formula (1):

[0046] (1);

[0047] Where, r 2 =x 2 +y 2 Let x represent the coordinate in the first direction and y represent the coordinate in the second direction. It is represented as the beam waist radius of the first laser beam.

[0048] Step S2: The first laser beam is homogenized using a homogenizer model based on a microlens array to obtain a homogenized second laser beam.

[0049] According to embodiments of this disclosure, the homogenizer model based on a microlens array includes two types: non-imaging and imaging. Using a microlens array-based homogenizer model to achieve uniform light field intensity distribution of the laser beam is one option for achieving uniform illumination. The non-imaging homogenizer consists of a single-row microlens array and a focusing lens with a focal length of F. The imaging homogenizer, based on the Kohler illumination system, consists of two tandem microlens arrays and a focusing lens with a focal length of F. The microlens array is composed of periodically arranged sub-microlenses. The incident collimated laser beam is divided into different channels by each sub-microlens. The beams in all channels are superimposed on the target plane after passing through the focusing lens to form a uniform illumination field. For high-power laser beams used in photolithography, the imaging homogenizer is a better choice for achieving laser beam homogenization. Therefore, this disclosure selects the imaging homogenizer as the microlens array-based homogenizer model to homogenize the first laser beam. The microlens array-based homogenizer model has advantages such as simple structure, flexible use, and low transmission loss.

[0050] In one illustrative embodiment, the homogenizer model based on a microlens array is also applicable to lithography systems with various laser wavelengths, requiring only simple adjustments to the components in the homogenizer model for use.

[0051] Figure 2 This is a schematic diagram of a homogenizer model based on a microlens array according to an illustrative embodiment of the present disclosure.

[0052] According to embodiments of this disclosure, such as Figure 2 As shown, the homogenizer model based on the microlens array in step S2 includes a first microlens array 2, a second microlens array 3, and a focusing lens 4 arranged in sequence. The first microlens array 2 and the second microlens array 3 are identical. The second microlens array 3 is located on the back focal plane of the first microlens array 2 and coincides with the front focal plane of the focusing lens 4. Figure 2 In this context, d represents the spacing between the back focal planes of the first microlens array 2 and the focusing lens 4, f represents the focal length of each sub-microlens, and F represents the focal length of the focusing lens 4. This is represented by the position of the first microlens array 2 in the second direction. This is represented by the position of the second microlens array 3 in the second direction. y represents the position of the focusing lens 4 in the second direction, y represents the position of the back focal plane of the focusing lens 4, and W represents the position in the axial direction.

[0053] Step S3: Process the parameters of the second laser beam using the photolithography imaging model to obtain the second spatial image result.

[0054] According to embodiments of this disclosure, the second spatial image result is used to characterize the exposure energy distribution of the second laser beam on the photoresist.

[0055] According to an embodiment of this disclosure, a homogenized second laser beam is used as the input laser beam to perform a laser direct-write lithography experiment and collect the second spatial image results.

[0056] Step S4: Process the first spatial image result and the second spatial image result using the photoresist model to obtain the first photoresist development result corresponding to the first spatial image result and the second photoresist development result corresponding to the second spatial image result.

[0057] According to embodiments of this disclosure, the first photoresist development result is the development result on the wafer corresponding to the first spatial image result, and the second photoresist development result is the development result on the wafer corresponding to the second spatial image result.

[0058] Step S5: Calculate the edge placement error by comparing the first photoresist development result and the second photoresist development result with the development result of the target pattern, and obtain the error calculation result.

[0059] According to embodiments of this disclosure, the edge placement error (EPE) calculation model is used to calculate the first photoresist development result and the second photoresist development result with the development result of the target pattern, respectively, and the error calculation results are collected and compared and analyzed.

[0060] Step S6: If the error calculation results meet the predetermined conditions, the homogenizer model based on the microlens array is determined as the optimized homogenizer model based on the microlens array.

[0061] According to embodiments of this disclosure, the parameters of a first laser beam are processed using a photolithography imaging model to obtain a first spatial image result. The first spatial image result is used to characterize the exposure energy distribution of the first laser beam on the photoresist. By using a homogenizer model based on a microlens array to homogenize the first laser beam, a homogenized second laser beam is obtained, which can improve the uniformity of the light field intensity distribution of the laser beam. The homogenizer model based on a microlens array includes a first microlens array 2, a second microlens array 3, and a focusing lens 4 arranged in sequence. The first microlens array 2 and the second microlens array 3 are identical. The second microlens array 3 is located on the back focal plane of the first microlens array 2 and coincides with the front focal plane of the focusing lens 4. The parameters of the second laser beam are processed using a photolithography imaging model to obtain a second spatial image. This second spatial image characterizes the exposure energy distribution of the second laser beam on the photoresist. The first and second spatial image results are then processed using a photoresist model to obtain a first photoresist development result corresponding to the first spatial image and a second photoresist development result corresponding to the second spatial image. Edge placement errors are calculated by comparing the first and second photoresist development results with the development result of the target pattern, yielding the error calculation results. If the error calculation results meet predetermined conditions, the homogenizer model based on the microlens array is determined as the optimized homogenizer model based on the microlens array, thus optimizing the photolithography results.

[0062] Figure 3 This is a flowchart illustrating the construction of a photolithographic imaging model according to an illustrative embodiment of the present disclosure.

[0063] According to embodiments of this disclosure, such as Figure 3 As shown, the photolithography imaging model is constructed through the following steps S10 to S13.

[0064] Step S10: Obtain the exposure time based on the step size of the input laser beam and the laser pulse time.

[0065] According to embodiments of this disclosure, the exposure time can be expressed by the following formula (2):

[0066] (2);

[0067] Where t represents the exposure time. Represented as step size, This is expressed as the laser pulse duration.

[0068] Step S11: Obtain the exposure dose based on the exposure time and the intensity distribution of the input laser beam.

[0069] According to embodiments of this disclosure, the exposure dose can be expressed by the following formula (3):

[0070] (3);

[0071] in, This is expressed as exposure dose. Let I be a constant, and let I represent the intensity distribution of the input laser beam.

[0072] According to embodiments of this disclosure, spatial image results can be obtained by convolution calculation of exposure dose and predetermined target pattern.

[0073] Step S12: Based on the exposure time and exposure dose, obtain the initial photolithography imaging model.

[0074] Step S13: Adjust the model parameters of the initial photolithography imaging model according to the predetermined target pattern to obtain the photolithography imaging model.

[0075] According to an embodiment of this disclosure, based on a photolithography imaging model, after selecting a target pattern, an input laser beam is used to scan and write on the photoresist along a first direction and a second direction, thereby transferring the target pattern, wherein the first direction and the second direction are orthogonal to each other.

[0076] According to embodiments of this disclosure, an initial lithography imaging model is constructed based on exposure time, intensity distribution of the input laser beam, and exposure dose. The lithography imaging model constructed by adjusting the model parameters of the initial lithography imaging model according to the predetermined target pattern can effectively simulate the exposure spatial image result of the input laser beam, which is convenient for subsequent lithography process optimization and analysis.

[0077] Figure 4 This is a flowchart illustrating the construction of a photoresist model according to an illustrative embodiment of the present disclosure.

[0078] According to embodiments of this disclosure, such as Figure 4 As shown, the photoresist model is constructed through the following steps S40 to S42.

[0079] Step S40: Based on the diffusion of photoresist during exposure, obtain the intensity distribution of the diffused input laser beam.

[0080] According to the embodiments of this disclosure, during the exposure and baking process of the photoresist, photoacid molecules diffuse in three dimensions at a certain temperature. The diffusion process of photoacid leads to a decrease in the contrast of the spatial image. The intensity distribution of the input laser beam after diffusion can be expressed by the following formula (4):

[0081] ;

[0082] in, This represents the intensity distribution of the input laser beam after diffusion. This represents the intensity distribution of the input laser beam before diffusion, where a represents the diffusion length and z represents the depth.

[0083] Step S41: Based on the intensity distribution of the diffused input laser beam and the exposure dose, obtain the initial photoresist model.

[0084] According to an embodiment of this disclosure, the intensity distribution of the diffused input laser beam is compared with a threshold to obtain the developed photoresist distribution, which can be represented by the following formula (5):

[0085] (5);

[0086] Where Q represents the photoresist distribution after development, and tr represents the threshold.

[0087] According to embodiments of this disclosure, the thickness of the photoresist at a pixel is determined by judging whether the exposure dose at each pixel exceeds a threshold, while the unexposed areas retain their original thickness.

[0088] Step S42: Adjust the model parameters of the initial photoresist model according to the predetermined target pattern to obtain the photoresist model.

[0089] According to embodiments of this disclosure, an initial photoresist model is obtained based on the intensity distribution and exposure dose of the diffused input laser beam. Then, the model parameters of the initial photoresist model are adjusted according to the predetermined target pattern to construct a photoresist model that can effectively simulate the photoresist development results in the actual photolithography process, facilitating subsequent photolithography process optimization and analysis.

[0090] Figure 5 This is a flowchart illustrating a schematic embodiment of the present disclosure for obtaining a homogenized second laser beam.

[0091] According to embodiments of this disclosure, such as Figure 5 As shown, the homogenization of the first laser beam using a homogenizer model based on a microlens array to obtain a homogenized second laser beam includes the following steps S20 to S22.

[0092] Step S20: The first laser beam is processed using the first microlens array 2 to obtain the first laser beam after the first light field distribution homogenization.

[0093] Figure 6 This is a flowchart illustrating an illustrative embodiment of the present disclosure for obtaining the first laser beam after the first homogenization of the optical field distribution. Figure 7 This is a diagram showing the light intensity distribution and homogenization result of each element in a homogenizer model based on a microlens array during the process of obtaining a homogenized second laser beam according to an illustrative embodiment of this disclosure.

[0094] According to embodiments of this disclosure, such as Figure 6 As shown, the first laser beam is processed by the first microlens array 2 to obtain the first laser beam after the first light field distribution is homogenized, including the following steps S201 to S202.

[0095] Step S201: Based on the refractive index, center thickness, focal length and aperture side length of each sub-microlens in the first microlens array 2, the complex amplitude transmittance of the first microlens array 2 is obtained.

[0096] According to embodiments of this disclosure, the complex amplitude transmittance of each sub-microlens can be expressed by the following formula (6):

[0097] (6);

[0098] in, j represents the complex amplitude transmittance of each sub-microlens. 2 =-1, k= , This represents the refractive index of each sub-microlens. Let represent the center thickness of each sub-microlens, and f represent the focal length of each sub-microlens. This is represented by the position of the first microlens array 2 in the first direction. This is represented by the position of the first microlens array 2 in the second direction.

[0099] According to embodiments of this disclosure, considering a finite aperture, the complex amplitude transmittance of a rectangular sub-microlens can be expressed by the following formula (7):

[0100] (7);

[0101] in, Let represent the complex amplitude transmittance of the rectangular sub-microlens, and p represent the side length of the aperture.

[0102] According to embodiments of this disclosure, an N×N microlens array is formed. Based on the array theorem, the complex amplitude transmittance of the first microlens array 2 can be expressed by the following formula (8):

[0103] (8);

[0104] in, It is expressed as the complex amplitude transmittance of the first microlens array 2.

[0105] Step S202: Based on the complex amplitude transmittance of the first microlens array 2, the first laser beam undergoes the first Fresnel diffraction to obtain the first laser beam after the first light field distribution homogenization.

[0106] According to an embodiment of this disclosure, the first laser beam is homogenized for the first time using the first microlens array 2, thereby changing the Gaussian distribution of the light field intensity of the first laser beam.

[0107] According to an embodiment of this disclosure, a first laser beam is emitted from laser 1, and the first laser beam irradiates the front surface of the first microlens array 2. The light intensity distribution of the first laser beam irradiating the front surface of the first microlens array 2 is as follows: Figure 7 As shown in Figure (a), Figure 7 Figure (b) shows the one-dimensional distribution of light intensity corresponding to Figure (a). The light intensity distribution from the rear surface of the first microlens array 2 to its focal plane is as follows: Figure 7 As shown in Figure (c), Figure 7 Figure (d) in the diagram represents the one-dimensional distribution of light intensity corresponding to Figure (c). Figure 7 In this context, d1 represents the distance between laser 1 and the first microlens array 2.

[0108] According to an embodiment of this disclosure, the propagation process of the first laser beam is a first Fresnel diffraction. Based on Fresnel's formula, when a unit plane wave is incident, the light field of the first laser beam after the first light field distribution homogenization on the focal plane of the first microlens array 2 is... This can be expressed by the following formula (9):

[0109] (9);

[0110] in, The transmittance is expressed as the complex amplitude of the first microlens array 2. Let j represent the wavelength of the first laser beam. 2 =-1, k= f represents the focal length of each sub-microlens in the first microlens array 2. This is represented by the position of the first microlens array 2 in the first direction. This is represented by the position of the first microlens array 2 in the second direction. This is represented by the position of the second microlens array 3 in the first direction. This is represented by the position of the second microlens array 3 in the second direction, where the first and second directions are orthogonal to each other.

[0111] Step S21: The first laser beam after the first light field distribution homogenization is processed by the second microlens array 3 to obtain the first laser beam after the second light field distribution homogenization.

[0112] Figure 8 This is a flowchart illustrating a schematic embodiment of the present disclosure of obtaining a first laser beam after a second light field distribution homogenization.

[0113] According to embodiments of this disclosure, such as Figure 8 As shown, the first laser beam after the first light field distribution homogenization is processed by the second microlens array 3 to obtain the first laser beam after the second light field distribution homogenization includes the following steps S211 to S212.

[0114] Step S211: Based on the refractive index, center thickness, focal length and aperture side length of each sub-microlens in the second microlens array 3, the complex amplitude transmittance of the second microlens array 3 is obtained.

[0115] Step S212: Based on the complex amplitude transmittance of the second microlens array 3, the first laser beam after the first light field distribution homogenization undergoes a second Fresnel diffraction to obtain the first laser beam after the second light field distribution homogenization.

[0116] According to an embodiment of this disclosure, the first laser beam after the first light field distribution homogenization is homogenized a second time using the second microlens array 3, thereby further improving the uniformity of the light field intensity distribution of the first laser beam after the first light field distribution homogenization.

[0117] According to an embodiment of this disclosure, the light intensity distribution of the first laser beam, after initial light field homogenization, irradiating the front surface of the second microlens array 3 is as follows: Figure 7 As shown in Figure (e), Figure 7 Figure (f) in the diagram represents the one-dimensional distribution of light intensity corresponding to Figure (e). Figure 7 In this context, d2 represents the distance between the first microlens array 2 and the second microlens array 3. Figure 7 In this context, d3 represents the distance between the second microlens array 3 and the focusing lens 4. The first laser beam, after the initial light field distribution homogenization, undergoes a second Fresnel diffraction after passing through the second microlens array 3, reaching the rear surface of the second microlens array 3. The light field of the first laser beam after the second light field distribution homogenization... This can be expressed by the following formula (10):

[0118] (10);

[0119] in, This represents the optical field of the first laser beam after the first homogenization of the optical field distribution. It is expressed as the complex amplitude transmittance of the second microlens array 3.

[0120] Step S22: Use focusing lens 4 to converge the first laser beam after the second light field distribution homogenization, and obtain the second laser beam based on Fourier transform.

[0121] According to an embodiment of this disclosure, the first laser beam, after the second light field distribution homogenization, propagates from the rear surface of the second microlens array 3 to the target plane, that is, from the front focal plane of the focusing lens 4 to the rear focal plane of the focusing lens 4. Based on Fourier transform, the second laser beam is obtained, and the light intensity distribution of the second laser beam on the target plane is as follows: Figure 7 As shown in Figure (g), Figure 7 The (h) diagram in the image represents the one-dimensional distribution of light intensity corresponding to the (g) diagram. Figure 7 In this context, d4 represents the distance between the focusing lens 4 and the target plane. The light field distribution of the second laser beam on the target plane is represented by the following formula (11):

[0122] (11);

[0123] Where F represents the focal length of focusing lens 4.

[0124] According to an embodiment of this disclosure, the light field intensity distribution of the second laser beam is calculated according to the following formula (12). The second laser beam is used as the input laser beam for subsequent analysis:

[0125] (12).

[0126] According to embodiments of this disclosure, a first spatial image result and a second spatial image result are processed using a photoresist model to obtain a first photoresist development result corresponding to the first spatial image result and a second photoresist development result corresponding to the second spatial image result. The first and second photoresist development results are compared with the development result of the target pattern to calculate the edge placement error. The edge placement error is used to characterize the difference between the edge of the photoresist development result after exposure and the target pattern. The edge placement error is one of the indicators for measuring photolithography quality. The smaller the edge placement error, the closer the photoresist development result after exposure is to the target pattern.

[0127] According to an embodiment of this disclosure, the error calculation result is obtained through the following formula (13):

[0128] (13);

[0129] in, This indicates the location of the photoresist development result. This indicates the position of the target graphic.

[0130] Figure 9 This is a development result image of a target pattern according to an illustrative embodiment of the present disclosure. Figure 10 This is a first photoresist development result diagram according to an illustrative embodiment of the present disclosure. Figure 11 This is a second photoresist development result diagram according to an illustrative embodiment of the present disclosure.

[0131] In one illustrative embodiment, such as Figure 9 The image shown is the development result of the target pattern. The shorter side of each white rectangle in the development result image is 100 nm. Using the first laser beam as the input laser beam, the first laser direct-write lithography experiment was performed, and the development result of the first photoresist is shown below. Figure 10 As shown in Figure (a), Figure 10 Figure (b) shows a comparison between the development results of the first photoresist and the development results of the target pattern. Using the homogenized second laser beam as the input laser beam, a second laser direct-write lithography experiment was performed, and the development results of the second photoresist were obtained as follows: Figure 11 As shown in Figure (a), Figure 11 Figure (b) shows a comparison between the development results of the second photoresist and the development results of the target pattern. The error calculation results of the first and second laser direct-write lithography experiments were calculated using formula (13) and compared. Compared with the first laser beam as the input laser beam, the error calculation results obtained by using the homogenized second laser beam as the input laser beam were improved by 12.3%, resulting in better lithography results. Therefore, the currently used homogenizer model based on microlens array was determined as the optimized homogenizer model based on microlens array.

[0132] Figure 12 This is a block diagram of a laser direct-write lithography optimization system based on a microlens array homogenizer according to an illustrative embodiment of the present disclosure.

[0133] According to another embodiment of this disclosure, a laser direct-write lithography optimization system based on a microlens array homogenizer is provided, suitable for implementing the above-described laser direct-write lithography optimization method based on a microlens array homogenizer, such as... Figure 12 As shown, the laser direct-write lithography optimization system 600 based on a microlens array homogenizer includes a first processing module 610, a second processing module 620, a third processing module 630, a fourth processing module 640, a calculation module 650, and a determination module 660.

[0134] According to an embodiment of the present disclosure, the first processing module 610 is used to process the parameters of the first laser beam using a photolithography imaging model to obtain a first spatial image result, wherein the first spatial image result is used to characterize the exposure energy distribution of the first laser beam on the photoresist. In one embodiment, the first processing module 610 can be used to perform the step S1 described above, which will not be repeated here.

[0135] According to an embodiment of this disclosure, the second processing module 620 is used to homogenize the first laser beam using a homogenizer model based on a microlens array to obtain a homogenized second laser beam. The homogenizer model based on a microlens array includes a first microlens array 2, a second microlens array 3, and a focusing lens 4 arranged in sequence. The first microlens array 2 and the second microlens array 3 are identical. The second microlens array 3 is located on the rear focal plane of the first microlens array 2 and coincides with the front focal plane of the focusing lens 4. In one embodiment, the second processing module 620 can be used to execute step S2 described above, which will not be repeated here.

[0136] According to an embodiment of this disclosure, the third processing module 630 is used to process the parameters of the second laser beam using a photolithography imaging model to obtain a second spatial image result, wherein the second spatial image result is used to characterize the exposure energy distribution of the second laser beam on the photoresist. In one embodiment, the third processing module 630 can be used to perform step S3 described above, which will not be repeated here.

[0137] According to an embodiment of this disclosure, the fourth processing module 640 is used to process the first spatial image result and the second spatial image result using the photoresist model respectively, to obtain a first photoresist development result corresponding to the first spatial image result and a second photoresist development result corresponding to the second spatial image result. In one embodiment, the fourth processing module 640 can be used to execute the step S4 described above, which will not be repeated here.

[0138] According to an embodiment of this disclosure, the calculation module 650 is used to calculate the edge placement error by comparing the first photoresist development result and the second photoresist development result with the development result of the target pattern, respectively, to obtain the error calculation result. In one embodiment, the calculation module 650 can be used to execute the step S5 described above, which will not be repeated here.

[0139] According to an embodiment of the present disclosure, the determining module 660 is used to determine the microlens array-based homogenizer model as the optimized microlens array-based homogenizer model when the error calculation result meets the predetermined conditions. In one embodiment, the determining module 660 can be used to perform step S6 described above, which will not be repeated here.

[0140] According to embodiments of this disclosure, any plurality of modules among the first processing module 610, second processing module 620, third processing module 630, fourth processing module 640, calculation module 650, and determination module 660 may be combined into one module, or any one of these modules may be split into multiple modules. Alternatively, at least part of the functionality of one or more of these modules may be combined with at least part of the functionality of other modules and implemented in one module. According to embodiments of this disclosure, at least one of the first processing module 610, second processing module 620, third processing module 630, fourth processing module 640, calculation module 650, and determination module 660 may be at least partially implemented as hardware circuitry, such as a field-programmable gate array (FPGA), a programmable logic array (PLA), a system-on-a-chip, a system-on-a-substrate, a system-on-package, an application-specific integrated circuit (ASIC), or any other reasonable means of integrating or packaging circuitry, or implemented in software, hardware, or firmware, or in any suitable combination of any of these three implementation methods. Alternatively, at least one of the first processing module 610, the second processing module 620, the third processing module 630, the fourth processing module 640, the calculation module 650, and the determination module 660 may be implemented at least partially as a computer program module, which can perform corresponding functions when the computer program module is run.

[0141] According to another embodiment of this disclosure, an electronic device is provided, including one or more processors and a storage device, the storage device being used to store one or more programs, which, when executed by one or more processors, cause the one or more processors to perform the above-described laser direct-write lithography optimization method based on a microlens array homogenizer.

[0142] Figure 13 This is a block diagram of an electronic device based on a laser direct-write lithography optimization method using a microlens array homogenizer according to an illustrative embodiment of the present disclosure. Figure 13 The electronic device shown is merely an example and should not be construed as limiting the functionality and scope of the embodiments disclosed herein.

[0143] like Figure 13As shown, an electronic device 700 according to an embodiment of the present disclosure includes a processor 701, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 702 or a program loaded from a storage portion 708 into a random access memory (RAM) 703. The processor 701 may include, for example, a general-purpose microprocessor (e.g., a CPU), an instruction set processor and / or an associated chipset and / or a special-purpose microprocessor (e.g., an application-specific integrated circuit (ASIC)), etc. The processor 701 may also include onboard memory for caching purposes. The processor 701 may include a single processing unit or multiple processing units for performing different actions of the method flow according to an embodiment of the present disclosure.

[0144] RAM 703 stores various programs and data required for the operation of electronic device 700. Processor 701, ROM 702, and RAM 703 are interconnected via bus 704. Processor 701 performs various operations of the method flow according to embodiments of the present disclosure by executing programs in ROM 702 and / or RAM 703. It should be noted that the programs may also be stored in one or more memories other than ROM 702 and RAM 703. Processor 701 may also perform various operations of the method flow according to embodiments of the present disclosure by executing programs stored in said one or more memories.

[0145] According to embodiments of this disclosure, the electronic device 700 may further include an input / output (I / O) interface 705, which is also connected to a bus 704. The electronic device 700 may also include one or more of the following components connected to the input / output (I / O) interface 705: an input section 706 including a keyboard, mouse, etc.; an output section 707 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 708 including a hard disk, etc.; and a communication section 709 including a network interface card such as a LAN card, modem, etc. The communication section 709 performs communication processing via a network such as the Internet. A drive 710 is also connected to the input / output (I / O) interface 705 as needed. A removable medium 711, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., is installed on the drive 710 as needed so that computer programs read from it can be installed into the storage section 708 as needed.

[0146] This disclosure also provides a computer-readable storage medium, which may be included in the device / apparatus / system described in the above embodiments; or it may exist independently and not assembled into the device / apparatus / system. The computer-readable storage medium carries one or more programs, which, when executed, implement the calibration method according to the embodiments of this disclosure.

[0147] According to embodiments of this disclosure, the computer-readable storage medium can be a non-volatile computer-readable storage medium, such as including, but not limited to: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof. In this disclosure, the computer-readable storage medium can be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. For example, according to embodiments of this disclosure, the computer-readable storage medium may include ROM 702 and / or RAM 703 and / or one or more memories other than ROM 702 and RAM 703 described above.

[0148] Embodiments of this disclosure also include a computer program product comprising a computer program containing program code for performing the methods shown in the flowchart. When the computer program product is run on a computer system, the program code is used to cause the computer system to implement the methods provided in the embodiments of this disclosure.

[0149] When the computer program is executed by the processor 701, it performs the functions defined in the system / apparatus of this disclosure embodiments. According to embodiments of this disclosure, the systems, apparatuses, modules, units, etc., described above can be implemented by computer program modules.

[0150] In one embodiment, the computer program may rely on a tangible storage medium such as an optical storage device or a magnetic storage device. In another embodiment, the computer program may also be transmitted and distributed in the form of signals over a network medium, and may be downloaded and installed via the communication section 709, and / or installed from a removable medium 711. The program code contained in the computer program can be transmitted using any suitable network medium, including but not limited to: wireless, wired, etc., or any suitable combination thereof.

[0151] In such an embodiment, the computer program can be downloaded and installed from a network via the communication section 709, and / or installed from the removable medium 711. When the computer program is executed by the processor 701, it performs the functions defined in the system of this disclosure embodiment. According to embodiments of this disclosure, the systems, devices, apparatuses, modules, units, etc., described above can be implemented by computer program modules.

[0152] According to embodiments of this disclosure, program code for executing the computer programs provided in embodiments of this disclosure can be written in any combination of one or more programming languages. Specifically, these computational programs can be implemented using high-level procedural and / or object-oriented programming languages, and / or assembly / machine languages. Programming languages ​​include, but are not limited to, languages ​​such as Java, C++, Python, "C", or similar programming languages. The program code can execute entirely on a user's computing device, partially on a user's device, partially on a remote computing device, or entirely on a remote computing device or server. In cases involving remote computing devices, the remote computing device can be connected to the user's computing device via any type of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0153] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of this disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram or flowchart, and combinations of blocks in a block diagram or flowchart, may be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.

[0154] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0155] It should also be noted that the directional terms mentioned in the embodiments, such as "up," "down," "front," "back," "left," and "right," are only for reference to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or constructions will be omitted where they may cause confusion in understanding this disclosure, and the shapes and dimensions of the components in the drawings do not reflect actual size and proportion, but are only schematic representations of the embodiments of this disclosure.

[0156] Unless otherwise stated, the numerical parameters in this specification and the appended claims are approximate values ​​and can be varied according to desired characteristics derived from the content of this disclosure. Specifically, all figures used in the specification and claims to indicate composition, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. Generally, this means that a specific amount may vary by ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments.

[0157] The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify the corresponding elements does not imply that the element has any ordinal number, nor does it represent the order of one element with another element, or the order of manufacturing methods. The use of these ordinal numbers is only to enable a named element to be clearly distinguished from another element with the same name.

[0158] Furthermore, unless specifically described or required to occur in a specific order, the order of the above steps is not limited to those listed above and can be varied or rearranged according to the desired design. Moreover, the above embodiments can be used in combination with each other or with other embodiments based on design and reliability considerations; that is, technical features from different embodiments can be freely combined to form more embodiments.

[0159] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. The scope of this disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A laser direct writing photolithography optimization method based on a microlens array homogenizer, comprising: processing parameters of a first laser beam by using a photolithography imaging model to obtain a first aerial image result, wherein the first aerial image result is used to represent exposure energy distribution of the first laser beam on a photoresist; homogenizing the first laser beam by using a microlens array-based homogenizer model to obtain a second homogenized laser beam, wherein the microlens array-based homogenizer model comprises a first microlens array, a second microlens array and a focusing lens arranged in sequence, the first microlens array and the second microlens array are the same, the second microlens array is located on a back focal plane of the first microlens array and coincides with a front focal plane of the focusing lens; processing parameters of the second laser beam by using the photolithography imaging model to obtain a second aerial image result, wherein the second aerial image result is used to represent exposure energy distribution of the second laser beam on the photoresist; processing the first aerial image result and the second aerial image result by using a photoresist model to obtain a first photoresist development result corresponding to the first aerial image result and a second photoresist development result corresponding to the second aerial image result; performing edge placement error calculation on the first photoresist development result and the second photoresist development result and a development result of a target pattern to obtain an error calculation result; in a case where the error calculation result meets a predetermined condition, determining the microlens array-based homogenizer model as an optimized microlens array-based homogenizer model.

2. The microlens array homogenizer-based laser direct writing lithography optimization method according to claim 1, wherein, The photolithography imaging model is constructed by: obtaining an exposure time based on a step length and a laser pulse time of an input laser beam; obtaining an exposure dose based on the exposure time and an intensity distribution of the input laser beam; obtaining an initial photolithography imaging model based on the exposure time and the exposure dose; adjusting model parameters of the initial photolithography imaging model according to a predetermined target pattern to obtain the photolithography imaging model.

3. The microlens array homogenizer-based laser direct writing lithography optimization method according to claim 2, wherein, The photoresist model is constructed by: obtaining an intensity distribution of the input laser beam after diffusion based on diffusion conditions of a photoacid of the photoresist in an exposure process; obtaining an initial photoresist model based on the intensity distribution of the input laser beam after diffusion and the exposure dose; adjusting model parameters of the initial photoresist model according to the predetermined target pattern to obtain the photoresist model.

4. The microlens array homogenizer-based laser direct writing lithography optimization method according to claim 2, wherein, The homogenizing the first laser beam by using the microlens array-based homogenizer model to obtain the second homogenized laser beam comprises: processing the first laser beam by using the first microlens array to obtain a first homogenized laser beam with first light field distribution; processing the first homogenized laser beam with first light field distribution by using the second microlens array to obtain a second homogenized laser beam with second light field distribution; converging the second homogenized laser beam with second light field distribution by using the focusing lens to obtain the second laser beam based on Fourier transform.

5. The microlens array homogenizer-based laser direct writing lithography optimization method according to claim 4, wherein, The first laser beam is processed by using the first microlens array to obtain a first laser beam with a first time uniformized light field distribution, including: Based on the refractive index, central thickness, focal length and aperture side length of each sub-microlens in the first microlens array, the complex amplitude transmittance of the first microlens array is obtained; Based on the complex amplitude transmittance of the first microlens array, the first laser beam undergoes first Fresnel diffraction to obtain the first time uniformized first laser beam.

6. The microlens array homogenizer-based laser direct writing photolithography optimization method according to claim 5, wherein, The light field of the first time uniformized first laser beam is represented by the following formula: ； wherein represents a complex amplitude transmittance of the first microlens array, represents a wavelength of the first laser beam, j 2 = -1, k represents a focal length of each sub-microlens in the first microlens array, represents a position of the first microlens array in a first direction, represents a position of the first microlens array in a second direction, represents a position of the second microlens array in the first direction, represents a position of the second microlens array in the second direction, the first direction and the second direction being orthogonal to each other.

7. The microlens array homogenizer-based laser direct writing lithography optimization method according to claim 6, wherein, The first laser beam is processed by using the first microlens array to obtain a first laser beam with a first time uniformized light field distribution, including: Based on the refractive index, central thickness, focal length and aperture side length of each sub-microlens in the first microlens array, the complex amplitude transmittance of the first microlens array is obtained; Based on the complex amplitude transmittance of the second microlens array, the first time uniformized first laser beam undergoes second Fresnel diffraction to obtain the second time uniformized first laser beam.

8. The microlens array homogenizer-based laser direct writing photolithography optimization method according to claim 7, wherein, The light field of the second time uniformized first laser beam is represented by the following formula: ； wherein, represents the light field of the first laser beam after homogenization of the first light field distribution, represents the complex amplitude transmittance of the second microlens array.

9. A micro-lens array homogenizer-based laser direct writing photolithography optimization system adapted to implement the micro-lens array homogenizer-based laser direct writing photolithography optimization method of any one of claims 1-8, wherein, The laser direct writing photolithography optimization system based on the microlens array uniformizer includes: A first processing module is configured to process parameters of a first laser beam by using a photolithography imaging model to obtain a first spatial image result, wherein the first spatial image result is used to represent an exposure energy distribution of the first laser beam on a photoresist; A second processing module is configured to perform uniformization processing on the first laser beam by using a microlens array-based uniformizer model to obtain a second laser beam after uniformization, wherein the microlens array-based uniformizer model includes a first microlens array, a second microlens array and a focusing lens arranged in sequence, the first microlens array and the second microlens array are the same, the second microlens array is located on a back focal plane of the first microlens array and coincides with a front focal plane of the focusing lens; A third processing module is configured to process parameters of the second laser beam by using the photolithography imaging model to obtain a second spatial image result, wherein the second spatial image result is used to represent an exposure energy distribution of the second laser beam on the photoresist; A fourth processing module is configured to process the first spatial image result and the second spatial image result by using a photoresist model respectively to obtain a first photoresist development result corresponding to the first spatial image result and a second photoresist development result corresponding to the second spatial image result; A calculation module is configured to perform edge placement error calculation on the first photoresist development result and the second photoresist development result respectively with a development result of a target pattern to obtain an error calculation result; A determination module is configured to determine the microlens array-based uniformizer model as an optimized microlens array-based uniformizer model in a case where the error calculation result meets a predetermined condition.

10. An electronic device, comprising: one or more processors; storage means for storing one or more programs, When the one or more programs are executed by the one or more processors, the one or more processors are caused to perform the method for optimizing laser direct writing photolithography based on a microlens array homogenizer according to any one of claims 1-8.

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