PVD (Physical Vapor Deposition) magnetron sputtering high metal ionization non-equilibrium magnetron

Abstract

The invention discloses a PVD (Physical Vapor Deposition) magnetron sputtering high metal ionization non-equilibrium magnetron. The non-equilibrium magnetron comprises a magnet yoke and a magnet block, the magnet block is installed on the magnet yoke and comprises an outer ring magnet, an inner ring magnet and a center magnet, a gap is formed between the outer side of the center magnet and the inner side of the outer ring magnet, the inner ring magnet is clamped in the gap between the outer ring magnet and the center magnet, and the outer ring magnet is provided with an N pole and an S pole which are oppositely distributed in the first direction; the center magnet is provided with an N pole and an S pole which are oppositely distributed in the reverse direction of the first direction. The inner ring magnet is provided with an N pole and an S pole which are oppositely distributed in the radial direction, the magnetic pole of the outer side of the inner ring magnet is the same as that of the end, away from the magnet yoke, of the outer ring magnet, and the magnetic pole of the inner side of the inner ring magnet is the same as that of the end, away from the magnet yoke, of the center magnet. According to the invention, the inner ring magnet with specific polarity configuration is arranged between the outer ring magnet and the central magnet, so that the magnetic field intensity of the magnet block on one side away from the magnet yoke is stronger, and the luminance build-up of the plasma is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor physical vapor deposition magnetron sputtering technology, in particular to a PVD magnetron sputtering high metal ionization non-equilibrium magnetron. BACKGROUND

[0002] Magnetron sputtering process is a common physical vapor deposition (PVD) process. Magnetron sputtering process is often used for thin film deposition on semiconductor devices and electronic devices. The basic principle of magnetron sputtering thin film deposition is that argon is ionized in the thin film deposition chamber to form plasma, and argon ions (Ar+) in the plasma fly to the target under the action of an electric field and sputter atoms of the target, and the sputtered target atoms or ionized target atoms will deposit on the substrate to form a thin film. In order to form an electric field, the target is negatively charged during the thin film deposition process, and the target acts as a cathode, while the inner wall of the thin film deposition chamber is grounded. The magnetic field generated by the magnetron can improve the plasma density near the surface of the target, thereby increasing the sputtering rate of the target. The design of the magnetron and the optimization of the magnetron movement can help improve the uniformity of the thin film and improve the full-area etching of the target.

[0003] TSV (Through Silicon Via) technology is the English abbreviation of the through silicon via technology, which is generally referred to as the silicon via or silicon through hole technology, and is a new technical solution for realizing interconnection of stacked chips in 3D integrated circuits. It is to make vertical conduction between chips and between wafers, so as to realize the interconnection between chips. With the development of semiconductor technology, the feature size has approached the physical limit, and the method of reducing the feature size of the chip has been unable to meet the needs of consumer electronics products to be more intelligent, compact and integrated. The 3D packaging based on TSV provides a new way for the industry, which can maximize the density of stacked chips in the three-dimensional direction, shorten the interconnection lines between chips, and minimize the size, greatly improving the performance of chip speed and low power consumption.

[0004] Compared to traditional wire bonding (WB), tape auto-soldering (TAB), and flip chip (FC), TSV technology has the following advantages: (1) High-density integration: It can significantly improve the integration of electronic components, reduce the geometric size of the package, and meet the requirements of consumer electronics for multi-functionality and miniaturization; (2) Improved electrical performance: It can significantly shorten the length of electrical interconnects, reducing the wire length to the chip thickness and the transmission distance to one-thousandth, thereby reducing parasitic capacitance and power consumption; (3) Achievement of heterogeneous integration: It can integrate different functional chips (such as RF, memory, logic, digital, and MEMS) together to achieve multi-functionality of electronic components; (4) Reduced cost: Although the cost of 3D integration technology based on TSV is currently high in terms of process, it will be more cost-effective than 2D packaging in the future when the technology and equipment mature. Based on this, TSV is also known in the industry as the fourth generation of interconnect technology after wire bonding, tape auto-soldering, and flip chip, and is also known as the ultimate interconnect technology.

[0005] TSV technology was first applied to image sensors, and in the future, it will be widely used in logic chips, memory chips, CPUs, and even heterogeneous integration. Its application areas are constantly expanding, and its development prospects are very bright. After the insulating layer of the TSV is formed, a metal diffusion barrier layer and a seed layer are deposited using physical vapor deposition (PVD) to prepare for subsequent copper filling. If the filler material is polycrystalline silicon or tungsten, a seed layer is not required. Subsequent electroplating of copper requires continuous barrier and seed layers on the TSV sidewalls and bottom. The continuity and uniformity of the seed layer are considered the most important influencing factors for TSV copper filling. Depending on the shape, aspect ratio, and deposition method of the through-silicon via, the characteristics of the seed layer vary; the thickness, uniformity, and adhesion strength of the deposited seed layer are all important indicators.

[0006] In contrast to TSV, through-glass via (TGV) 3D interconnect technology, as a potential alternative to silicon-based interposers, is becoming a research hotspot due to its numerous advantages. Compared to silicon substrates, TGV's advantages are mainly reflected in: 1) Excellent high-frequency electrical characteristics. Glass is an insulating material with a dielectric constant only about 1 / 3 that of silicon, and its loss factor is 2-3 orders of magnitude lower than silicon, greatly reducing substrate loss and parasitic effects and ensuring the integrity of transmitted signals; 2) Large-size ultra-thin glass substrates are readily available. Glass manufacturers such as Corning, Asahi, and SCHOTT can provide ultra-large (>2m×2m) and ultra-thin (<50μm) panel glass and ultra-thin flexible glass materials; 3) Low cost. Benefiting from the availability of large-size ultra-thin panel glass and the elimination of the need for insulating layer deposition, the manufacturing cost of glass interposers is approximately 1 / 8 that of silicon-based interposers; 4) Simple process flow. There is no need to deposit insulating layers on the substrate surface and the inner wall of the TGV, and thinning is not required in ultra-thin interposers; 5) Strong mechanical stability. Even when the thickness of the adapter plate is less than 100μm, the warpage is still relatively small; 6) Wide range of applications. In addition to its promising application prospects in the high-frequency field, as a transparent material, it can also be used in the field of optoelectronic system integration. Its advantages in airtightness and corrosion resistance make glass substrates have great potential in the field of MEMS packaging.

[0007] For decades, the advancements in the semiconductor industry have been underpinned by a golden rule: Moore's Law. Moore's Law states that the number of transistors (components) that can be placed on an integrated circuit doubles approximately every 18-24 months. In other words, semiconductor manufacturing processes roughly advance to the next technology node every two years, and chip performance doubles accordingly. Moore's Law has charted the course and set the course for the chip industry's development. The iterations of chip manufacturing processes, from micrometers, submicrometers, and deep submicrometers, to 193nm, 157nm, 90nm, 65nm, 40nm, 28nm, 20nm, and more recently, 14nm, 12nm, 7nm, and 5nm, have all followed Moore's Law. As chip sizes approach their physical limits, the difficulty and cost of achieving performance improvements through process advancements are increasing. Semiconductor manufacturing is shifting from planar to three-dimensional, as exemplified by the currently popular 3D InFET and 3D NAND. Simultaneously, cutting-edge packaging technologies such as 3D packaging are becoming crucial for improving the performance of complex chips, and the packaging and testing industry may well move towards a more technology-intensive direction in the future.

[0008] Whether it's advanced technology nodes in semiconductor manufacturing, or TSV or TGV, all require continuous seed layers and a certain degree of uniformity on the sidewalls and bottom (if there is a bottom) of deep holes or trenches. For PVD magnetron sputtering, this means that during thin film deposition, high target atom ionization, optimized ion guidance, and the application of a negative bias voltage from the RF power supply are needed to pull the ionized positive ions from the target atoms to the sidewalls and bottom of the deep holes or trenches. To achieve high target atom ionization, a high plasma density is required, so that sputtered target atoms have a chance to collide with Ar+ and be ionized during their passage through the plasma. High plasma density requires high target power and a small magnetron size, meaning that the target power per unit area of ​​the magnetron needs to be relatively high. Therefore, the magnetron size needs to be relatively small. With a smaller magnetron size, the problem arises that the magnetron's magnetic field strength is relatively weak, making plasma ignition and maintenance more difficult. To date, magnetron design optimization is far from meeting the stringent requirements of high target atom ionization for magnetrons. Summary of the Invention

[0009] This invention aims to address at least one of the technical problems existing in the prior art. To this end, this invention proposes an unbalanced magnetron for PVD magnetron sputtering with high metal ionization. By placing an inner ring magnet with a specific polarity configuration between the outer ring magnet and the central magnet, the magnetic field strength of the magnet block in this design is stronger on the side away from the yoke, that is, the side closer to the PVD target. A stronger magnetic field facilitates plasma ignition at low pressure during magnetron sputtering and can maintain the plasma at relatively low pressures.

[0010] The PVD magnetron sputtering high metal ionization unbalanced magnetron according to embodiments of the present invention includes:

[0011] Magnetic yoke;

[0012] A magnet block is mounted on a magnetic yoke. The magnet block includes an outer ring magnet, an inner ring magnet, and a central magnet. The central magnet is located inside the outer ring magnet. There is a gap between the outer side of the central magnet and the inner side of the outer ring magnet. The inner ring magnet is sandwiched in the gap between the outer ring magnet and the central magnet. The axis of the outer ring magnet is parallel to a first direction. The outer ring magnet has N poles and S poles that are relatively distributed along the first direction. The central magnet has N poles and S poles that are relatively distributed in opposite directions along the first direction.

[0013] The inner ring magnet has N and S poles that are distributed opposite to each other along its radial direction. The outer magnetic pole of the inner ring magnet is the same as the magnetic pole of the outer ring magnet at the end away from the yoke. The inner magnetic pole of the inner ring magnet is the same as the magnetic pole of the central magnet at the end away from the yoke. The outer magnetic pole of the inner ring magnet is opposite to its inner magnetic pole.

[0014] The PVD magnetron sputtering high metal ionization unbalanced magnetron according to embodiments of the present invention has at least the following beneficial effects:

[0015] This invention strengthens the magnetic field on one side of the magnet block by placing an inner ring magnet with a specific polarity configuration between the outer ring magnet and the central magnet. Specifically, the magnet block of this invention includes an outer ring magnet, an inner ring magnet, and a central magnet. The central magnet is located inside the outer ring magnet, and the inner ring magnet is sandwiched between the outer ring magnet and the central magnet. The axis of the outer ring magnet is parallel to a first direction, and the outer ring magnet has N poles and S poles that are relatively distributed along the first direction. The central magnet has N poles and S poles that are relatively distributed in opposite directions along the first direction. Specifically, along the radial direction of the inner ring magnet, the outer side of the inner ring magnet has the N pole, and the inner side has the S pole.

[0016] The magnet block has two opposing sides along a first direction. On one side of the magnet block along the first direction, the N pole of the inner ring magnet is close to the N pole of the outer ring magnet, and the S pole of the inner ring magnet is close to the S pole of the central magnet. That is, after the magnetic fields of the outer ring magnet, the inner ring magnet, and the central magnet are superimposed, the N pole and the S pole of the magnet block on that side are strengthened, so the magnetic field strength on that side of the magnet block is stronger and the horizontal component is larger, making it easier for the plasma to ignite. Therefore, with this configuration, the magnetic field strength on one side of the magnetron is stronger when the magnetron size remains unchanged. During magnetron sputtering, the plasma is more likely to ignite on that side of the magnetron, thus the magnetron of the present invention can maintain plasma at a relatively low gas pressure.

[0017] In other embodiments of the present invention, the first plane is perpendicular to the first direction, and the ratio of the cross-sectional area S1 of the outer ring magnet cut by the first plane to the cross-sectional area S2 of the central magnet cut by the first plane satisfies the following:

[0018]

[0019] Among them, R M It is the unbalance ratio of the magnetron, 1 <R M ≤4, more preferably, 1.5≤R M ≤3.

[0020] In other embodiments of the present invention, the inner ring magnet has an inner surface facing its own axis and an outer surface away from its own axis, the outer ring magnet has an inner surface facing its own axis, the outer surface of the inner ring magnet is attached to the inner surface of the outer ring magnet, or the inner ring magnet and the outer ring magnet are spaced apart, and the maximum gap between the outer surface of the inner ring magnet and the inner surface of the outer ring magnet does not exceed 10 mm.

[0021] The central magnet has an outer surface that is away from its own axis, the inner surface of the inner ring magnet is attached to the outer surface of the central magnet, or the central magnet and the inner ring magnet are spaced apart, and the maximum gap between the outer surface of the central magnet and the inner surface of the inner ring magnet does not exceed 10mm.

[0022] In other embodiments of the invention, the central magnet is configured as a cylinder, the outer ring magnet is configured as a ring, and the inner ring magnet is configured as a ring, with the center lines of the central magnet, the outer ring magnet, and the inner ring magnet all being collinear.

[0023] In other embodiments of the invention, the heights of the central magnet, the outer ring magnet, and the inner ring magnet are all equal and flush along the direction of the axis of the central magnet.

[0024] In other embodiments of the invention, the thickness of the inner ring magnet is smaller than the diameter of the central magnet along the radial direction of the outer ring magnet, and the thickness of the inner ring magnet is smaller than the thickness of the outer ring magnet.

[0025] In other embodiments of the present invention, the outer ring magnet is composed of a plurality of outer ring magnetic blocks, all of which are mounted on a magnetic yoke so that the outer ring magnet is connected to the magnetic yoke; and / or

[0026] The inner ring magnet is composed of multiple inner ring magnetic blocks, all of which are mounted on the magnetic yoke so that the inner ring magnet is connected to the magnetic yoke; and / or,

[0027] The central magnet is composed of multiple central magnetic blocks, all of which are mounted on the magnetic yoke so that the central magnet is connected to the magnetic yoke.

[0028] In other embodiments of the present invention, the PVD magnetron sputtering high metal ionization unbalanced magnetron includes an electrically insulating layer, with an electrically insulating sheet located between an outer ring magnet, an inner ring magnet, and a central magnet; and / or,

[0029] The electrical insulation layer is located between two adjacent outer ring magnetic blocks; and / or,

[0030] The electrical insulation layer is located between two adjacent inner ring magnetic blocks; and / or,

[0031] The electrical insulation layer is located between two adjacent central magnetic blocks.

[0032] In other embodiments of the present invention, the outer ring magnetic block includes a plurality of first mounting holes and a plurality of connectors, wherein the plurality of first mounting holes are all adapted to allow the connectors to pass through, so that the outer ring magnetic block is connected to the magnetic yoke; and / or,

[0033] The inner ring magnet includes multiple second mounting holes, all of which are adapted for the passage of a connector to allow the inner ring magnet to connect to the yoke; and / or,

[0034] The central magnetic block includes multiple third mounting holes, all of which are suitable for the insertion of connectors to allow the central magnetic block to connect to the yoke.

[0035] In other embodiments of the invention, the first mounting holes are evenly distributed at intervals on the outer ring magnetic block; and / or,

[0036] The second mounting holes are evenly distributed at intervals on the inner ring magnet; and / or,

[0037] The third mounting holes are evenly distributed at intervals on the central magnetic block.

[0038] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0039] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0040] Figure 1 This is a schematic diagram of the structure of a magnetron sputtering thin film deposition device in the prior art;

[0041] Figure 2 This is a schematic diagram of a magnetron in the prior art, in which there is a gap between the N pole and the S pole;

[0042] Figure 3 This is a schematic diagram of a magnetron in the prior art, in which there is no gap between the N pole and the S pole;

[0043] Figure 4A A schematic diagram illustrating the magnetic field strength required to balance the magnetron;

[0044] Figure 4B This is a schematic diagram of the magnetic field strength of an unbalanced magnetron.

[0045] Figure 5A This is a schematic diagram of the magnetic field strength of an unbalanced magnetron with a gap between its two poles.

[0046] Figure 5B A schematic diagram of the magnetic field strength of an unbalanced magnetron with no gap between its poles;

[0047] Figure 6 This is a schematic diagram of the magnetron structure of the present invention;

[0048] Figure 7A For existing technology Figure 3 Magnetic field distribution diagram of a magnetron;

[0049] Figure 7B For the invention of the magnetron Figure 6 Magnetic field distribution diagram;

[0050] Figure 8The results of finite element calculations are optimized for magnetic field strength.

[0051] Figure 9 For two such Figure 6 The comparison of the magnetic field components of the magnetron parallel to the target surface on the target surface is shown.

[0052] Figure 10 for Figure 6 The assembly diagram of the magnetron is shown.

[0053] Figure label:

[0054] about Figure 1 As shown: Magnetron sputtering thin film deposition equipment 20, cavity 22, substrate stage 24, target material 26, main power supply 28, flow meter 30, vacuum pump 32, magnetron 34, substrate 36, top cover 38, insulating block 40, upper mask 42, lower mask 44, substrate pressure plate 46, collimator 48, DC bias voltage 50, electromagnetic coil 52, RF power supply 54, matching unit 56;

[0055] about Figure 2 As shown: Magnetron 58, N-pole 60 of magnetron 58, and S-pole 62 of magnetron 58;

[0056] about Figure 3 As shown: Magnetron 64, N-pole 66 of magnetron 64, and S-pole 68 of magnetron 64;

[0057] about Figure 4A The magnetron shown has: N pole 70, S pole 72, and center line 74 between the two poles;

[0058] about Figure 4B The magnetron shown includes: weaker magnetic pole 76, stronger magnetic pole 78, and the location of maximum corrosion 80.

[0059] about Figure 5A The magnetron shown has the following markings: N pole 82, S pole 84, and the location of maximum corrosion 86.

[0060] about Figure 5B The magnetron shown has the following markings: N pole 88, S pole 90, and the location of maximum corrosion 92.

[0061] about Figure 6 The magnetron shown consists of: magnetron 94, outer ring magnet 96, center magnet 98, and inner ring magnet 100.

[0062] about Figure 10 The magnetron shown consists of: magnetron 102, outer ring magnet 104, center magnet 106, inner ring magnet 108, yoke 110, connecting bolt 112, and magnet 114. Detailed Implementation

[0063] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0064] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0065] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0066] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0067] In the description of this invention, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0068] As mentioned earlier, in related technologies, whether it's advanced technology nodes in semiconductor manufacturing or TSV or TGV, a continuous seed layer and a certain degree of uniformity are required on the sidewalls and bottom (if there is a bottom) of deep holes or trenches. For PVD magnetron sputtering, this means that during thin film deposition, high target atom ionization, optimized ion guidance, and the application of a negative bias voltage from the RF power supply are needed to pull the ionized positive ions from the target atoms to the sidewalls and bottom of the deep holes or trenches. To achieve high target atom ionization, a high plasma density is required, so that the sputtered target atoms have a chance to collide with Ar+ and be ionized during their passage through the plasma. High plasma density requires high target power and a small magnetron size, meaning that the target power per unit area of ​​the magnetron needs to be relatively high. Therefore, the magnetron size needs to be relatively small. With a smaller magnetron size, the problem arises that the magnetic field strength of the magnetron will be relatively weak, making plasma ignition and maintenance more difficult. To date, the design optimization of magnetrons is far from meeting the various stringent requirements of high target atom ionization for magnetrons.

[0069] Before introducing the magnetron design of the present invention, the existing magnetron sputtering thin film deposition equipment will be introduced below. Figure 1 A prior art magnetron sputtering thin film deposition apparatus 20 is shown. For example... Figure 1 As shown, the magnetron sputtering thin film deposition apparatus 20 includes a chamber 22, a substrate stage 24, a target 26, a main power supply 28, a flow meter 30, a vacuum pump 32, a magnetron 34, a substrate 36, a top cover 38, an insulating block 40, an upper mask 42, a lower mask 44, a substrate pressure plate 46, a collimator 48, a DC bias voltage 50, an electromagnetic coil 52, an RF power supply 54, and a matching unit 56. The target 26 is positioned facing the substrate stage 24. The main power supply 28 applies sputtering power to the target 26. The flow meter 30 controls the flow rate in the process chamber and controls the process gas pressure via the vacuum pump 32 and a gate valve. The target 26 is positioned directly above the substrate stage 24. The magnetron 34 can move relative to the target 26 under the drive of a drive device (not shown). The magnetron 34 is positioned above the target 26, i.e., the magnetron assembly 34 is located on the side of the target 26 facing away from the substrate stage 24. The function of the magnetron 34 will be described in detail below. The substrate stage 24 is used to hold the substrate 36. The top of the thin film deposition chamber 22 is provided with a movable top cover 38, which allows the user to open the thin film deposition chamber 22, thereby facilitating the user to replace the target 26, perform maintenance on the magnetron sputtering thin film deposition equipment 20, and replace parts in the equipment. A sealing ring (not shown) may be provided between the thin film deposition chamber 22 and the top cover 38 to prevent the thin film deposition chamber 22 from communicating with the atmospheric environment.

[0070] The target material 26 is generally a conductor. The main power supply 28 is electrically connected to the target material 26, which is located at the target material mounting position, through a conductive wire. The main power supply 28 can supply power to the target material 26. Figure 1 In this configuration, the negative terminal of the main power supply 28 is connected to the target 26, while the positive terminal of the main power supply 28 is grounded. The inner wall of the thin film deposition chamber 22 is also grounded. Thus, when the main power supply 28 supplies power to the target 26, an electric field is generated between the target 26 and the inner wall of the thin film deposition chamber 22. The substrate stage 24 used to support the substrate 36 can be grounded or electrically levitated.

[0071] Flow meter 30 is connected to thin film deposition chamber 22, and flow meter 30 can be connected to an external gas source. The external gas source is not... Figure 1 As shown, the external gas source is a container storing the working gas, which is connected to the flow meter 30 via a pipe. The process gas can be argon. When the flow meter 30 is turned on, the process gas can be delivered into the interior of the thin film deposition chamber 22; and the flow rate of the working gas can also be adjusted by the flow meter 30.

[0072] Vacuum pump 32 is connected to thin film deposition chamber 22. Vacuum pump 32 is used to remove gases, including air and process gases, from chamber 22. During the thin film deposition process on substrate 36 by magnetron sputtering thin film deposition equipment 20, the internal chamber of thin film deposition chamber 22 is isolated from the atmospheric environment, and the inside of thin film deposition chamber 22 is a vacuum. Vacuum pump 32 can remove gases from thin film deposition chamber 22, thereby achieving a vacuum state in thin film deposition chamber 22 and maintaining the vacuum level in thin film deposition chamber 22 within a suitable range.

[0073] The magnetron sputtering thin film deposition apparatus 20 also includes an insulating block 40 and a mask. The mask is detachably mounted inside the thin film deposition chamber 22 and is replaceable. The mask covers a portion of the inner wall surface of the thin film deposition chamber 22 to prevent atoms sputtered from the target 26 from adhering to the inner wall surface of the thin film deposition chamber 22. Figure 1 In the process, two masking plates are provided: an upper masking plate 42 and a lower masking plate 44. A substrate clamping plate 46 presses down on the periphery of the substrate 36 during thin film deposition. An insulating block 40, made of insulating material, has its bottom surface in contact with the upper masking plate 42 and its top surface in contact with the edge of the target 26. The insulating block 40 supports the edge of the target 26 and separates the upper masking plate 42 and the target 26. The masking plates can be grounded or ungrounded.

[0074] Figure 1The working principle of the magnetron sputtering thin film deposition equipment 20 is as follows. Process gas, such as argon, is introduced into the thin film deposition chamber 22. The main power supply 28 supplies power to the target 26, thereby generating an electric field inside the thin film deposition chamber 22. This electric field ionizes at least a portion of the argon gas. Specifically, electrons move in a spiral motion on the target surface under the influence of the electric and magnetic fields, or move from the target 26 towards the substrate 36 or the mask. During the electron movement, electrons collide with argon atoms, causing the argon atoms to ionize and produce argon ions (Ar+) and new electrons. Under the influence of the electric field, the positively charged argon ions move towards the target 26 and bombard its surface, causing sputtering. The sputtered neutral atoms (neutral target atoms) or those sputtered and ionized during their passage through the plasma deposit onto the substrate 36, thus forming a relatively uniform thin film on the surface of the substrate 36. The electrons generated during sputtering and during collisions are used to form and maintain plasma on the surface of the target 26, so that the above-mentioned argon ionization and argon ion bombardment of the target 26 can be repeated, thereby realizing the continuous deposition of magnetron sputtering thin film.

[0075] Electrons generated during sputtering of the target 26, electrons ionized from argon atoms, and electrons generated from the ionization of sputtered neutral atoms are all subject to electric and magnetic fields, resulting in a drift in the direction indicated by E (electric field) × B (magnetic field) (referred to as E×B drift). The trajectory of these drifting electrons approximates a cycloid. If the magnetic field provided by the magnetron sputtering assembly 34 is a toroidal magnetic field, the electrons will move in a toroidal spiral motion on the surface of the target 26 with an approximate cycloid trajectory. These electrons not only have long paths but are also confined to a plasma region close to the surface of the target 26. Furthermore, in this region, argon atoms ionize into a large number of argon ions, which bombard the target 26, thereby achieving a high deposition rate.

[0076] When the power of the target 26 is relatively high and the size of the toroidal magnetron 34 is relatively small, the density of the toroidal plasma is relatively high. Only then can the sputtered target atoms have the opportunity to collide with Ar+ and be ionized during their passage through the plasma. The deep hole trench filling material is generally a conductive metal material. The ionization of target atoms is usually called metal ionization to distinguish it from the ionization of chemically inert process gases, such as argon. When metal ionization is insufficient, the angle between the unionized target atoms and the direction along the sidewall of the deep hole or trench may be large, making it impossible for them to deposit on the sidewall and bottom of the deep hole or trench. These large angles with the direction along the sidewall cause target atoms to accumulate at the opening of the deep hole or trench, sealing it off if the opening size is small, resulting in defects within the deep hole or trench. These large angles with the direction along the sidewall allow target atoms to pass through... Figure 1The collimator 48 shown is filtered out. A DC bias of 50 can be applied to the collimator 48.

[0077] Once the target atoms from magnetron sputtering are ionized, they can be guided by the electromagnetic coil 52 or a permanent magnet to prevent them from being lost onto the lower mask 44. The magnetic field of the electromagnetic coil 52 or the permanent magnet pushes the metal ions toward the center of the cavity 22, or away from the lower mask 44; causing the metal ions to move toward the deep hole or trench in a direction nearly perpendicular to the substrate 36, that is, along the sidewall of the deep hole or trench. As the metal ions approach the substrate, they are attracted and accelerated by the bias voltage provided by the RF power supply 54 applied to the substrate stage 24, and finally deposited onto the upper surface of the substrate 36 and the sidewall and bottom of the deep hole or trench. The RF power supply 54 is adjacent to the substrate stage through the matching unit 56.

[0078] Reference Figures 1 to 3 The magnetron in the prior art is described. Figure 1 The magnetron 34 in the middle can be of various sizes and shapes. Figure 2 The image shows a toroidal magnetron 58 used in the prior art to improve metal ionization. Figure 2 The gap d between the N pole 60 and the S pole 62 of the magnetron 58 is too large, resulting in the magnetron 58 being too large. Such a structure does not help to increase the plasma density. Figure 3 The image shows a small-sized toroidal magnetron 64 in the prior art. There is no gap between the N pole 66 and the S pole 68 of this magnetron, which is done to allow the outer diameter of the magnetron 64 to be very small. Figure 3 The magnet 64 shown has its N pole 66 and S pole 68 in contact, with opposite magnetic field strengths at the contact point. These forces cancel each other out, weakening the magnetic field of the magnetron 64. A weak magnetic field is detrimental to plasma ignition and maintenance, requiring higher process gas pressures. Furthermore, Figure 3 The magnetron 64 shown has no gap between the N pole 66 and the S pole 68 of the magnet block, which results in a sharp bend in the magnetic field lines on the surface of the target 26 between the N pole 66 and the S pole 68 of the magnetron 64. That is, the range in which the component of the magnetic field lines parallel to the surface of the target 26 reaches a sufficient value is relatively short. This situation is not conducive to plasma ignition and plasma maintenance.

[0079] To address the aforementioned problems, this invention proposes an unbalanced magnetron for PVD magnetron sputtering with high metal ionization. The magnetron of this invention is an unbalanced magnetron; for comparison, a balanced magnetron is cited first. (Refer to...) Figure 4A The magnetic field lines and plasma of the balanced magnetron are symmetrical with respect to the center line of the gap between the two magnetic poles 70 and 72, with maximum erosion occurring at the center line 74 of the gap. The magnetic field also dissipates very quickly at long distances, resulting in less plasma heating on the substrate. (Refer to...) Figure 4BThe unbalanced magnetron magnetic field lines and plasma will deflect towards the weaker magnetic pole 76, or away from the stronger magnetic pole 78. Maximum erosion occurs on the target material closer to the weaker magnetic pole 76. Figure 4B As shown, the location of maximum erosion, 80, is closer to the weak magnetic pole, 76.

[0080] The unbalance ratio of an unbalanced magnetron is defined as the ratio of the cross-sectional areas of the two magnetic poles. For Figure 1 and Figure 2 The toroidal magnetron has an unbalance ratio R. M It is the ratio of the area of ​​the outer ring-shaped N pole to the area of ​​the inner cylindrical S pole.

[0081]

[0082] Figure 1 and Figure 2 The unbalance ratio of a toroidal magnetron is obviously greater than 1. Magnetrons with an unbalance ratio greater than 1 have focused magnetic field lines, which can reduce the loss of metal ions onto the mask. Figure 4A The balanced magnetron in the middle has an unbalanced ratio close to 1. Figure 4B The unbalance ratio of the unbalanced magnetron is slightly less than 1, meaning that the outer magnetic pole N is weak, while the central magnetic pole S is relatively stronger. Figure 5A It is an unbalanced magnetron with a gap between the two poles and an unbalance ratio greater than 1. The magnetron includes an N pole 82, an S pole 84 and a position 86 where the maximum erosion occurs. The unbalance ratio of the magnetron is 3.8. Figure 5B It is an unbalanced magnetron with no gap between the two poles. The magnetron includes an N pole 88, an S pole 90, and a position 92 where the maximum corrosion occurs. The unbalance ratio of the magnetron is 3.5.

[0083] In summary, magnetrons have the following requirements:

[0084] First, the surface area of ​​the target material 26 is small, resulting in a small plasma size and high density.

[0085] Secondly, a strong magnetic field makes it easy for the plasma to ignite, and more importantly, it can maintain the plasma at relatively low pressure.

[0086] Third, a relatively high non-equilibrium ratio.

[0087] Fourth, the thicker the target material 26, the wider the distance between the two magnetic poles of the magnetron must be.

[0088] It should be noted that the first and second requirements mentioned above are contradictory. Taking into account the above requirements for the magnetron, a magnetron 94 of the present invention is as follows: Figure 6As shown, the magnetic fields generated by the N pole (facing the target 26 below) of the outer ring magnet 96 and the S pole of the central magnet 98, and the magnetic field generated by the inner ring magnet 100, can be superimposed. This enhances the horizontal magnetic field of the magnetron 94 of the present invention, making plasma ignition easier.

[0089] It's important to note that magnetron sputtering at low pressures is problematic because particles (argon atoms) are less likely to collide. Since particles lose energy upon collision, the resulting film density is lower, leading to poorer film quality. Lower pressures reduce the chances of the metal atoms from the target colliding with other particles, allowing them to maintain higher energy levels and thus producing better film quality. Furthermore, the ionized metal ions from the target also prefer minimal collisions to revert to atoms. Therefore, magnetron sputtering is generally performed at low pressures.

[0090] Reference Figure 6 The present invention strengthens the magnetic field strength on the side of the magnet block 114 facing the magnetron sputtering target by setting an inner ring magnet 100 with a specific polarity configuration between the outer ring magnet 96 and the central magnet 98. Specifically, in some embodiments, the magnet block 114 of the present invention includes an outer ring magnet 96, an inner ring magnet 100, and a central magnet 98. The central magnet 98 is located inside the outer ring magnet 96, and there is a gap between the outer side of the central magnet 98 and the inner side of the outer ring magnet 96. The inner ring magnet 100 is sandwiched in the gap between the outer ring magnet 96 and the central magnet 100. The axis of the outer ring magnet 96 is parallel to a first direction, and the outer ring magnet 96 has N poles and S poles that are relatively distributed along the first direction. The central magnet 98 has N poles and S poles that are relatively distributed in opposite directions along the first direction. The inner ring magnet 100 has N poles and S poles that are distributed opposite to each other along its radial direction. The outer magnetic poles of the inner ring magnet 100 are the same as the magnetic poles of the outer ring magnet 96 at the end away from the yoke. The inner magnetic poles of the inner ring magnet are the same as the magnetic poles of the center magnet 98 at the end away from the yoke. The outer magnetic poles of the inner ring magnet 100 are opposite to its inner magnetic poles.

[0091] Continue to refer to Figure 6The magnet block 114 has two opposing sides along a first direction, with one side of its upper surface facing the yoke and the other side of its lower surface facing the target. On the side of the magnet block 114 facing the target along the first direction, i.e., the lower surface, the N pole of the inner ring magnet 100 is close to the N pole of the outer ring magnet 96, and the S pole of the inner ring magnet 100 is close to the S pole of the central magnet 98. That is, after the magnetic fields of the outer ring magnet 96, the inner ring magnet 100, and the central magnet 98 are superimposed, the N pole and S pole of the magnet block 114 on this side are strengthened, so the magnetic field strength of the magnet block 114 on this side is stronger and the horizontal component is larger, making it easier for the plasma to ignite and be maintained. Therefore, with this configuration, the magnetic field strength on the side of the magnetron 94 facing the target is stronger when the size of the magnetron 94 remains unchanged. During magnetron sputtering, the plasma is more likely to ignite on this side of the magnetron 94, and the magnetron 94 of the present invention can maintain the plasma at a relatively low gas pressure.

[0092] In some embodiments, the first plane is perpendicular to the first direction, and the ratio of the cross-sectional area S1 of the outer ring magnet 96 intercepted by the first plane to the cross-sectional area S2 of the central magnet 98 intercepted by the first plane satisfies the following:

[0093]

[0094] Among them, R M It is the unbalance ratio of the magnetron, 1 <R M ≤4, more preferably, 1.5≤R M ≤3.

[0095] Reference Figure 7A and Figure 7B , Figure 7A It is existing technology Figure 2 The magnetic field distribution diagram of the magnetron 64 shows that the magnetic field lines are symmetrical, meaning that the magnetic field distribution above and below the magnetron 64 is symmetrical. Figure 7B The magnetron 94 of this invention (see) Figure 6 The magnetic field distribution diagram shows that the magnetic field strength is enhanced below the target 26 and weakened above it. Specifically, on the side below the magnetron 94, the N pole of the inner ring magnet 100 is close to the N pole of the outer ring magnet 96. The superposition of the N poles of the outer ring magnet 96 and the inner ring magnet 100 enhances the magnetic field strength. Similarly, the S pole of the inner ring magnet 100 is close to the S pole of the central magnet 98. The superposition of the S poles of the central magnet 98 and the inner ring magnet 100 enhances the magnetic field strength. Therefore, the magnetic field strength on the side of the magnetron 94 facing the target 26 is enhanced, the magnetic field component parallel to the target sputtering surface is larger, the plasma is more easily ignited, and it is easier to maintain the plasma.

[0096] Reference Figure 6Above the magnetron 94 (the side facing away from the target 26, i.e., the side to be connected to the yoke), the magnetic field above the magnetron 94 is weakened due to the superposition of the S pole of the outer ring magnet 96 and the N pole of the inner ring magnet 100, and the magnetic field above the center magnet 98 and the inner ring magnet 98. This weakening of the magnetic field above the magnetron 94 helps reduce interference from magnetism on components such as sensors in the magnetron sputtering equipment 20, facilitating the operation of the magnetron sputtering thin film deposition equipment 20.

[0097] Reference Figure 6 The inner ring magnet 100 has an inner surface facing its own axis and an outer surface facing away from its own axis, while the outer ring magnet 96 has an inner surface facing its own axis. The outer surface of the inner ring magnet 100 and the inner surface of the outer ring magnet 96 may or may not have a gap. Specifically, in some embodiments, the outer surface of the inner ring magnet 100 is attached to the inner surface of the outer ring magnet 96; in some embodiments, the inner ring magnet 100 and the outer ring magnet 96 are spaced apart, and the maximum gap between the outer surface of the inner ring magnet 100 and the inner surface of the outer ring magnet 96 does not exceed 10 mm. The central magnet 98 has an outer surface facing away from its own axis, and the outer surface of the central magnet 98 and the inner surface of the inner ring magnet 100 may or may not have a gap. Specifically, in some embodiments, the inner surface of the inner ring magnet 100 is attached to the outer surface of the central magnet 98; in some embodiments, the central magnet 98 and the inner ring magnet 100 are spaced apart, and the maximum gap between the outer surface of the central magnet 98 and the inner surface of the inner ring magnet 100 does not exceed 10 mm. This configuration results in a compact magnetron 94 structure, which is beneficial for improving plasma density and metal ionization rate.

[0098] Still refer to Figure 6 In some embodiments, the central magnet 98 is configured as a cylinder, the outer ring magnet 96 is configured as a ring, and the inner ring magnet 100 is configured as a ring, with the centerlines of the central magnet 98, outer ring magnet 96, and inner ring magnet 100 all collinear. Configuring the magnet block structure into cylindrical, ring, or other shapes makes the magnetron 94 more compact and simplified, and reduces the manufacturing difficulty of the magnet block's related structures, thereby reducing manufacturing costs. The collinearity of the centerlines of the central magnet 98, outer ring magnet 96, and inner ring magnet 100 ensures a uniform distribution of the magnetic field in the sputtering region. This uniform magnetic field distribution helps improve magnetron sputtering efficiency and uniformity, thereby enhancing the quality and performance of the deposited film.

[0099] Continue to refer to Figure 6 In some embodiments, the heights of the central magnet 98, the outer ring magnet 96, and the inner ring magnet 100 are all equal along the direction of the axis of the central magnet 98.

[0100] Reference Figure 10In some embodiments, the outer ring magnet 96 is composed of multiple outer ring magnetic blocks 104, all of which are mounted on the yoke 110 so that the outer ring magnet 96 is connected to the yoke 110 via connecting bolts 112. The inner ring magnet 100 is composed of multiple inner ring magnetic blocks 108, all of which are mounted on the yoke 110 so that the inner ring magnet 100 is connected to the yoke 110. The central magnet 98 is composed of multiple central magnetic blocks 106, all of which are mounted on the yoke 110 so that the central magnet 98 is connected to the yoke 110. By designing the outer ring magnet 96, inner ring magnet 100, and central magnet 98 to be composed of multiple magnetic blocks, flexible assembly of the magnetron 102 is achieved.

[0101] In some embodiments, the PVD magnetron sputtered high-metal-ionization unbalanced magnetron 102 includes an electrically insulating layer, which may be composed of an electrically insulating sheet, an electrically insulating filler layer, or an electrically insulating coating. Specifically, when the electrically insulating layer is composed of an electrically insulating coating, the electrically insulating coating may also be an insulating layer similar to epoxy resin, which also has the function of bonding adjacent magnet blocks, making the entire magnetron 102 structure more robust and reliable. When the electrically insulating layer is composed of an electrically insulating sheet or an electrically insulating filler layer, the electrically insulating sheet or electrically insulating filler layer may be located between the outer ring magnet, the inner ring magnet, and the central magnet, or between two adjacent outer ring magnets 104, between two adjacent inner ring magnets 108, or between two adjacent central magnets 106. For convenience, the outer ring magnets 104, the central magnets 106, and the inner ring magnets 108 are collectively referred to as magnet blocks 114. The electrical insulating sheet or electrical insulating filling layer is located between two adjacent magnet blocks 114, which effectively prevents the eddy current generated by the magnetron 102 during high-speed movement from being directly transmitted between multiple magnet blocks 114, and reduces the risk of the magnetron 102 overheating.

[0102] Reference Figure 10 In some embodiments, the outer ring magnet 104 includes multiple first mounting holes, all of which are suitable for the passage of a connector to connect the outer ring magnet 104 to the yoke 110. The inner ring magnet 108 includes multiple second mounting holes, all of which are suitable for the passage of a connector to connect the inner ring magnet 108 to the yoke 110. The central magnet 106 includes multiple third mounting holes, all of which are suitable for the passage of a connector to connect the central magnet 106 to the yoke 110. The use of mounting holes simplifies and speeds up the installation of the magnet 114. The arrangement of multiple mounting holes improves the structural stability and reliability of the magnetron 102.

[0103] In summary, as a preferred embodiment, referring to... Figure 10Because the magnet block 114 is large and has high magnetic strength, the magnets of each pole are divided into four equal parts, and each small magnet block has three mounting holes. Bolts pass through the mounting holes to fix the magnet block 114 to the circular magnetic yoke 110. The four equal parts of the magnet block can be separated by an electrically insulating material to reduce excessive eddy currents generated when the magnetron 102 moves at high speed.

[0104] The following section further elaborates on the principles of this scheme, so that the optimal magnetron structure can be designed based on these principles. Specifically, refer to... Figure 8 , Figure 8 This is the result of finite element calculations for optimized magnetic field strength. In some embodiments, such as... Figure 6 The outer diameter of the magnetron 94 (110 mm) and the height of the magnet (30 mm) shown are fixed. The unbalance ratio R of the magnetron 94 is... M Set between 2 and 3, the central magnet 98 is cylindrical, and the radius R of the central magnet 98 is... o Both the gap d between the outer ring magnet 96 and the central magnet 98 are variables. Figure 8 The calculation focuses on the magnetic field component parallel to the target surface 26, where the target thickness is 26 mm and the distance between the magnetron 96 and the target 26 is 2 mm. Specifically, Br represents the horizontal component of the magnetic field, measured in Tesla (T), perpendicular to the axis containing d and R. o The axis in question is within the range of 0 to 0.15; the variables corresponding to the X and Y axes are the radius R of the central magnet 98, respectively. o The distance d between the inner wall of the outer ring magnet 96 and the outer wall of the central magnet 98 is the width of the inner ring magnet 100. Figure 8 What is displayed is Figure 6 The change in the horizontal magnetic field strength of the magnetron 94. Due to the constraint relationship, R M It's between 2 and 3, so it's just in Figure 8 The coordinate region contains data. Specifically, when d equals 0, R... o It cannot be less than 27mm. For example, when d equals 0, R... o It can only be between 27 and 31.5 mm; when d equals 40, R0 is basically fixed at 10 mm (because it needs to satisfy R). M The constraint relationship, i.e., R M (Between 2 and 3). As shown in the figure, d is around 28. Draw a line and R. o The straight line shown is parallel to the axis, and Br has a peak value when d equals 28.

[0105] Figure 8 This means, roughly within what range, the magnetron has the highest horizontal magnetic field strength Br, i.e., the strongest horizontal magnetic field; through d and R oThe relationship is that at which value is the magnetic field strength Br in the horizontal direction of the magnetron the largest, so as to optimize the design of the magnetron 94, so that the magnetic field strength on the surface of the target material 26 is the strongest and the plasma ignition effect is the best.

[0106] Reference Figure 9 , are two like Figure 6 The comparison shows the magnetic field components of the magnetron 94 parallel to the surface of the target 26. This is achieved by optimizing R... o And d can significantly increase the magnetic field strength. Specifically, "old" refers to a magnetron with gaps, and "new" refers to the magnetron of this invention. For Figure 9 The X-axis, with its origin O at the target center, extends from the target center along the target surface to a range of 150 mm. The Y-axis displays the magnetic field strength, with the horizontal component of the magnetic field strength shown as its absolute value. Figure 9 This means that the distribution of the magnetic field strength of the magnetron in the horizontal direction is shown within a range from the center of the target 26 along the target surface to 150 mm.

[0107] Further Figure 9 To explain, Figure 9 The Y-axis represents the horizontal magnetic field strength Br of the magnetron. The magnetron has a cylinder at its center, surrounded by a ring. This can be understood as the center of the magnetron being the center of the central magnet 98, and the outer ring being the outer ring magnet 96. The "old" magnetron lacks an inner ring magnet 100 to fill the gap between them, while the "new" magnetron has an inner ring magnet 100 filling the gap. Along the Y-axis, the horizontal component of the magnetic field strength at the center is 0, with only a vertical component; the magnetic field lines are perpendicular to the surface of the magnet block, and the horizontal magnetic field strength Br is 0. Then, at a point between the central magnet 98 and the outer ring magnet 96, Br is at its highest. (Refer to...) Figure 5A There is a gap between the inner cylindrical magnet and the outer ring magnet. At approximately a certain point within this gap, the horizontal magnetic field strength Br is at its maximum. Figure 9 As shown, the highest point of the convexity on the curve is the peak value of Br. (Refer to...) Figure 6 In this invention, the magnetron has an inner ring magnet 100 filling the gap between the cylindrical central magnet 98 and the outer ring magnet 96. At a certain position of the inner ring magnet 100, the horizontal magnetic field strength Br is the greatest, such as... Figure 9 As shown, the highest point of the convex curve is the peak value of Br.

[0108] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made within the scope of knowledge possessed by those skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. A PVD magnetron sputtering high metal ionized non-equilibrium magnetron characterized in that, Comprise: A magnetic yoke; A magnet block, the magnet block is installed on the magnetic yoke, the magnet block comprises an outer ring magnet, an inner ring magnet and a center magnet, the center magnet is located on the inner side of the outer ring magnet, there is a gap between the outer side of the center magnet and the inner side of the outer ring magnet, the inner ring magnet is clamped in the gap between the outer ring magnet and the center magnet, the axis of the outer ring magnet is parallel to the first direction, the outer ring magnet has N and S poles oppositely distributed along the first direction, the center magnet has N and S poles oppositely distributed along the first direction in the opposite direction; Wherein, the inner ring magnet has N and S poles oppositely distributed along its radial direction, the magnetic pole of the outer side of the inner ring magnet is the same as the magnetic pole of the end of the outer ring magnet away from the magnetic yoke, the magnetic pole of the inner side of the inner ring magnet is the same as the magnetic pole of the end of the center magnet away from the magnetic yoke, and the magnetic pole of the outer side of the inner ring magnet is opposite to the magnetic pole of the inner side thereof.

2. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron according to claim 1, characterized in that, The first plane is perpendicular to the first direction, the ratio of the cross-sectional area S1 of the outer ring magnet cut by the first plane to the cross-sectional area S2 of the center magnet cut by the first plane satisfies: wherein R M is the non-equilibrium ratio of the magnetron, 1 < R M ≤ 4, more preferably 1.5 ≤ R M ≤ 3.

3. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron according to claim 2, characterized in that, The inner ring magnet has an inner surface facing its own axis and an outer surface facing away from its own axis, the outer ring magnet has an inner surface facing its own axis, the outer surface of the inner ring magnet is fitted with the inner surface of the outer ring magnet, or the inner ring magnet and the outer ring magnet are spaced apart, and the maximum gap between the outer surface of the inner ring magnet and the inner surface of the outer ring magnet is not more than 10mm; The center magnet has an outer surface facing away from its own axis, the inner surface of the inner ring magnet is fitted with the outer surface of the center magnet, or the center magnet and the inner ring magnet are spaced apart, and the maximum gap between the outer surface of the center magnet and the inner surface of the inner ring magnet is not more than 10mm.

4. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron of claim 3, wherein, The center magnet is configured in a cylindrical shape, the outer ring magnet is configured in a circular ring shape, the inner ring magnet is configured in a circular ring shape, and the axis of the center magnet, the outer ring magnet and the inner ring magnet are collinear.

5. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron according to claim 4, characterized in that, Along the direction of the axis of the center magnet, the heights of the center magnet, the outer ring magnet and the inner ring magnet are equal and flush.

6. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron according to claim 5, characterized in that, Along the radial direction of the outer ring magnet, the thickness dimension of the inner ring magnet is smaller than the diameter of the center magnet, and the thickness dimension of the inner ring magnet is smaller than the thickness dimension of the outer ring magnet.

7. The PVD magnetron sputtering high metal ionization non-equilibrium magnetron of claim 1, wherein, The outer ring magnet is composed of a plurality of outer ring magnet blocks, and the plurality of outer ring magnet blocks are installed on the magnetic yoke to connect the outer ring magnet to the magnetic yoke; and / or, The inner ring magnet is composed of a plurality of inner ring magnet blocks, and the plurality of inner ring magnet blocks are installed on the magnetic yoke to connect the inner ring magnet to the magnetic yoke; and / or, The center magnet is composed of a plurality of center magnet blocks, and the plurality of center magnet blocks are installed on the magnetic yoke to connect the center magnet to the magnetic yoke.

8. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron according to claim 7, characterized in that, The PVD magnetron sputtering high metal ionization non-equilibrium magnetron comprises an electrically insulating layer between the outer ring magnet, the inner ring magnet and the center magnet; and / or, The electrically insulating layer is located between two adjacent outer ring magnetic blocks; and / or, The electrically insulating layer is located between two adjacent inner ring magnetic blocks; and / or, The electrically insulating layer is located between two adjacent center magnetic blocks.

9. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron of claim 7, wherein, The outer ring magnetic blocks comprise a plurality of first mounting holes, each of which is adapted to be penetrated by a connecting member so as to connect the outer ring magnetic blocks to the magnetic yoke; and / or, The inner ring magnetic blocks comprise a plurality of second mounting holes, each of which is adapted to be penetrated by the connecting member so as to connect the inner ring magnetic blocks to the magnetic yoke; and / or, The center magnetic blocks comprise a plurality of third mounting holes, each of which is adapted to be penetrated by the connecting member so as to connect the center magnetic blocks to the magnetic yoke.

10. The PVD magnetron sputtering high metal ionized non-equilibrium magnetron according to claim 9, characterized in that, The first mounting holes are evenly distributed on the outer ring magnetic blocks; and / or, The second mounting holes are evenly distributed on the inner ring magnetic blocks; and / or, The third mounting holes are evenly distributed on the center magnetic blocks.

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