Schottky junction processing method and system and Schottky junction
By employing a synergistic process of laser etching, acid solution cleaning, and electrochemical deposition, the high cost and complexity of Schottky junction fabrication have been resolved, enabling high-precision Schottky junction manufacturing under ambient pressure. This technology is suitable for applications such as high-speed rectifiers, field-effect transistors, photodetectors, and solar cells.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-01
- Publication Date
- 2026-03-10
AI Technical Summary
Existing Schottky junction fabrication methods require the use of photolithography or physical masks, resulting in high costs and complex processes that hinder large-scale manufacturing.
A synergistic process of laser etching, acid solution cleaning, and electrochemical deposition is employed to directly write micro- and nano-structures on the semiconductor surface using lasers, combined with acid etching to remove the oxide layer, and electrochemical deposition to achieve atomic-level metal-semiconductor contact, thereby forming a Schottky junction.
Achieving high-precision Schottky junction manufacturing in an atmospheric pressure solution environment reduces equipment costs and energy consumption, overcomes the complexity of traditional processes and dependence on vacuum environments, and is suitable for large-scale manufacturing.
Smart Images
Figure CN121645913A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of microelectronics fabrication technology, specifically relating to a Schottky junction fabrication method, system, and Schottky junction. Background Technology
[0002] A Schottky junction is an interface structure formed by the direct contact between a metal and a semiconductor. Its core characteristic lies in the Schottky barrier formed at the metal-semiconductor interface, which is essentially an asymmetry in electron transport caused by band bending. Schottky junctions exhibit significant rectification characteristics, meaning they readily conduct electricity in one direction but exhibit high impedance in the opposite direction. Due to this asymmetric conductivity, Schottky junctions are widely used in semiconductor devices, such as high-speed rectifiers, field-effect transistors, photodetectors, and solar cells.
[0003] Current technologies for fabricating Schottky junctions primarily employ vacuum evaporation, electron beam evaporation, sputtering deposition, and chemical vapor deposition. These methods all require high vacuum or controlled atmosphere conditions to ensure the purity and deposition quality of the metal film. During fabrication, the metal is deposited on the semiconductor surface in atomic or molecular form, creating close contacts that establish the Schottky barrier.
[0004] However, when it is necessary to fabricate the structure and pattern of Schottky junctions, photolithography or physical masks are often required to process the special structure or pattern of the Schottky junction, resulting in high costs and complex processes, which are technical problems that hinder the large-scale manufacturing and use of Schottky junctions. Summary of the Invention
[0005] To address the technical problem in the background art that the fabrication of Schottky junctions, which often requires the use of photolithography or physical masks to process the special structures or patterns of Schottky junctions, resulting in high costs and complex processes, thus hindering the large-scale manufacturing and use of Schottky junctions, this invention provides a Schottky junction processing method, system, and Schottky junction.
[0006] To achieve the above objectives, the present invention adopts the following technical solution:
[0007] In a first aspect, this application provides a method for processing a Schottky junction, the method comprising:
[0008] S1: Fix the semiconductor workpiece to be processed onto the processing platform;
[0009] S2: Select the parameters for processing laser and the parameters for moving the processing platform according to the processing requirements;
[0010] S3: forming a semiconductor workpiece with a required structure or pattern by laser etching on the semiconductor workpiece to be processed using the processing laser according to the parameters of the selected processing laser and the movement parameters of the processing platform;
[0011] S4: soaking the semiconductor workpiece with a required structure or pattern in an acid solution to remove the oxide on the surface of the semiconductor workpiece with a required structure or pattern, thereby obtaining a semi-finished product;
[0012] S5: performing an electrochemical deposition operation on the semi-finished product to obtain a required Schottky junction.
[0013] Optionally, the parameters of the processing laser in step S2 include the pulse width and the repetition frequency of the processing laser.
[0014] The pulse width of the processing laser is less than 10 picoseconds, and the repetition frequency is less than 100 KHz.
[0015] The movement parameters of the processing platform are generated according to the structure / pattern of the required Schottky junction. The processing platform includes a moving assembly and a fixed assembly, and the fixed assembly is used to fixedly install the semiconductor workpiece to be processed.
[0016] The moving assembly is connected to the fixed assembly and is used to drive the fixed assembly and the semiconductor workpiece to be processed to move, so that the laser etching is performed on the semiconductor workpiece to be processed by the laser module, thereby forming a semiconductor workpiece with a required structure or pattern.
[0017] Optionally, in step S4, the following steps are included:
[0018] S4.1: configuring a hydrofluoric acid solution, and determining the soaking time according to the concentration of the hydrofluoric acid solution;
[0019] S4.2: placing the semiconductor workpiece with a required structure or pattern into the hydrofluoric acid solution;
[0020] S4.3: based on the soaking time, performing ultrasonic cleaning on the semiconductor workpiece with a required structure or pattern in the hydrofluoric acid solution, thereby obtaining a semi-finished product.
[0021] Optionally, in step S4.1, the concentration of the configured hydrofluoric acid solution is 2% to 5%, and as the concentration of the hydrofluoric acid solution increases, the soaking time gradually decreases, wherein when the concentration of the hydrofluoric acid solution is 2%, the soaking time is not more than 10 minutes, and when the concentration of the hydrofluoric acid solution is 5%, the soaking time is not more than 5 minutes.
[0022] Optionally, step S5 specifically includes:
[0023] S5.1: configuring an electrolyte according to the processing requirements;
[0024] S5.2: Place the semi-finished product into the electrolyte as the cathode for electrochemical deposition, and insert the metal anode into the electrolyte;
[0025] S5.3: Apply direct current to the semi-finished product and the metal anode, and perform electrochemical deposition on the semi-finished product to obtain the desired Schottky junction.
[0026] Optionally, the process also includes step S6: inspecting the formed Schottky junction using a transmission electron microscope. If the formed Schottky junction has no visible oxide layer or lattice defects or vacancies, the processing is complete; otherwise, the processing is repeated.
[0027] Secondly, the present invention provides a Schottky junction processing system for implementing the above-described Schottky junction processing method, comprising:
[0028] A processing platform is used to fix and mount semiconductor components to be processed.
[0029] The laser module, located above the processing platform, is used to perform laser etching on the semiconductor workpiece fixedly mounted on the processing platform to form a semiconductor workpiece with the required structure or pattern.
[0030] The acid solution module is used to immerse semiconductor workpieces with desired structures or patterns to obtain semi-finished products;
[0031] The electrochemical deposition module is used to perform electrochemical deposition operations on semi-finished products to obtain the required Schottky junctions.
[0032] Optionally, the processing platform includes a moving component and a fixing component, the fixing component being used to fix the semiconductor workpiece to be processed;
[0033] The moving component is connected to the fixed component and is used to move the fixed component and the semiconductor workpiece to be processed, so as to perform laser etching on the semiconductor workpiece through the laser module to form a semiconductor workpiece with the required structure or pattern.
[0034] Optionally, the Schottky junction processing system further includes a transmission electron microscope for inspecting the acquired Schottky junction.
[0035] Thirdly, the present invention provides a Schottky junction, which is generated based on the Schottky junction processing method described above.
[0036] The beneficial effects of this invention are:
[0037] The application provides a Schottky junction processing method, which combines laser processing, acid solution cleaning and electrochemical deposition to form a synergistic process, solves the core problems of dependence on vacuum environment and limited patterned freedom in traditional Schottky junction preparation, directly writes the required micro-nano structure on the semiconductor surface through laser, avoids the alignment error and process complexity caused by photolithography mask, the acid etching step completely removes the interface oxide layer to ensure the purity of the metal-semiconductor atomic level direct contact, and the electrochemical deposition realizes localized growth by using the sharp end effect of the laser modified area, significantly reduces the short circuit risk caused by metal deposition in the non-target area, and realizes high-precision Schottky junction manufacturing in a normal pressure solution environment by using the three-step synergistic mechanism in the application, greatly reduces the equipment cost and energy consumption, and breaks through the processing limit of complex Schottky junction in the prior art, and provides a new process path for Schottky junction processing.
[0038] Meanwhile, the application also provides a Schottky junction processing system, which realizes the whole process of Schottky junction processing, realizes high-precision Schottky junction manufacturing in a normal pressure solution environment, greatly reduces the equipment cost and energy consumption, and breaks through the processing limit of complex Schottky junction in the prior art, and provides a new process path for Schottky junction processing. BRIEF DESCRIPTION OF DRAWINGS
[0039] Figure 1 is a schematic diagram of the Schottky junction processing method in the application;
[0040] Figure 2 is a schematic diagram of etching and processing the required structure or pattern on the semiconductor to-be-processed piece by moving the processing platform to make the laser module in the application;
[0041] Figure 3 is a schematic diagram of obtaining the Schottky junction by electrochemical deposition in the application;
[0042] Figure 4 is a schematic diagram of testing the formed Schottky junction by a transmission electron microscope in the application. DETAILED DESCRIPTION
[0043] In order to make the purpose, technical scheme and advantages of the embodiments of the application clearer, the technical scheme in the embodiments of the application will be described clearly and completely in combination with the drawings in the embodiments of the application. Obviously, the described embodiments are only part of the embodiments of the application, not all the embodiments. The description of the at least one exemplary embodiment is actually only illustrative, but not as any limitation on the application and use or use of the application. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the application.
[0044] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, devices, components and / or combinations thereof, but do not preclude the presence or addition of one or more other features, steps, operations, devices, components and / or combinations thereof.
[0045] It should be noted that the embodiments and features of the embodiments in the present application can be combined with each other without conflict. The present application will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
[0046] Embodiment One
[0047] Referring to Figure 1 , a schematic diagram of a Schottky junction processing method in the present application is shown, comprising:
[0048] S1: fixing the semiconductor workpiece to be processed on a processing platform;
[0049] S2: selecting the parameters of the processing laser and the movement parameters of the processing platform according to the processing requirements;
[0050] S3: performing laser etching on the semiconductor workpiece to be processed by using the processing laser according to the selected parameters of the processing laser and the movement parameters of the processing platform, so as to form a semiconductor workpiece with a required structure or pattern, as shown in Figure 2
[0051] S4: immersing the semiconductor workpiece with the required structure or pattern in an acid solution to remove the oxides on the surface of the semiconductor workpiece with the required structure or pattern, so as to obtain a semi-finished product;
[0052] S5: performing electrochemical deposition operation on the semi-finished product to obtain the required Schottky junction.
[0053] This embodiment provides a Schottky junction fabrication method that combines laser processing, acid solution cleaning, and electrochemical deposition to form a synergistic process. This solves the core problems of vacuum environment dependence and limited patterning freedom in traditional Schottky junction fabrication. By directly writing the required micro / nano structures on the semiconductor surface with a laser, the alignment errors and process complexity caused by photolithography masks are avoided. The acid etching step thoroughly removes the interface oxide layer, ensuring the purity of direct metal-semiconductor atomic-level contact. Electrochemical deposition utilizes the tip effect of the laser-modified region to achieve localized growth, significantly reducing the short-circuit risk caused by metal deposition in non-target areas. This three-step synergistic mechanism can achieve high-precision Schottky junction fabrication in an ambient pressure solution environment, greatly reducing equipment costs and energy consumption. At the same time, it breaks through the processing limitations of existing technologies for complex Schottky junctions, providing a new process path for Schottky junction fabrication.
[0054] Optionally, the parameters of the processing laser in step S2 of the present invention include: the pulse width and repetition frequency of the processing laser; the pulse width of the processing laser is less than 10 picoseconds and the repetition frequency is less than 100 kHz; the movement parameters of the processing platform are generated according to the required structure / pattern of the Schottky junction; wherein, the processing platform includes a moving component and a fixing component, and the fixing component is used to fix and install the semiconductor workpiece to be processed;
[0055] The moving component is connected to the fixed component and is used to move the fixed component and the semiconductor workpiece to be processed, so as to perform laser etching on the semiconductor workpiece through the laser module to form a semiconductor workpiece with the required structure or pattern.
[0056] In this embodiment, the limitation of laser parameters controls the heat-affected zone to the nanoscale. The combination of short pulses (<10 ps) and low repetition frequency (<100 kHz) reduces heat accumulation, thereby reducing the thickness of the recast layer or heat-affected zone, effectively suppressing material remelting and lattice damage, and ensuring the physical integrity of the processed structure. The programmed control of the motion parameters of the processing platform gives the structural design a high degree of freedom. Through vector path planning, precise conversion from micrometer-level meshes to submicrometer lattices can be achieved, meeting the needs of different application scenarios for Schottky junction topology configurations. This parameter combination simultaneously optimizes processing efficiency and accuracy, increasing the processing speed to a factor of several times that of traditional photolithography processes while ensuring feature size consistency, making it particularly suitable for large-scale manufacturing.
[0057] Optionally, step S4 in this invention includes:
[0058] S4.1: Prepare a hydrofluoric acid solution and determine the soaking time based on the concentration of the hydrofluoric acid solution;
[0059] S4.2: Place the semiconductor workpiece with the required structure or pattern into a hydrofluoric acid solution;
[0060] S4.3: Based on the immersion time, ultrasonic cleaning is performed on semiconductor workpieces with desired structures or patterns in hydrofluoric acid solution to obtain semi-finished products.
[0061] Optionally, in step S4.1 of the present invention, the concentration of the prepared hydrofluoric acid solution is 2% to 5%; and as the concentration of the hydrofluoric acid solution increases, the soaking time gradually decreases. Specifically, when the concentration of the hydrofluoric acid solution is 2%, the soaking time does not exceed 10 minutes, and when the concentration of the hydrofluoric acid solution is 5%, the soaking time does not exceed 5 minutes.
[0062] In this embodiment, the synergistic effect of hydrofluoric acid immersion and ultrasonic cleaning achieves a balance between oxide removal depth and interface roughness. Specifically, the immersion time is selected according to the concentration of hydrofluoric acid solution to avoid semiconductor surface depression caused by excessive etching. At the same time, ultrasonic cleaning is used to ensure that the oxide layer on the surface of semiconductor workpieces with the required structure or pattern is completely removed.
[0063] Preferably, the concentration of the hydrofluoric acid solution can be selected as 2%, 3%, 4%, or 5%.
[0064] Optionally, refer to Figure 3 Step S5 in this invention specifically includes:
[0065] S5.1: Prepare the electrolyte according to processing requirements;
[0066] S5.2: Place the semi-finished product into the electrolyte as the cathode for electrochemical deposition, and insert the metal anode into the electrolyte;
[0067] S5.3: Apply direct current to the semi-finished product and the metal anode, and perform electrochemical deposition on the semi-finished product to obtain the desired Schottky junction.
[0068] In this embodiment, during the electrochemical deposition process, the roughness of the area of the desired structure or pattern etched by laser processing is much higher than that of the area not etched by laser. Under the effect of the tip effect, the metal ions in the electrolyte are deposited only in the area after laser processing and etching. During the deposition process, due to the continuous effect of the tip effect, the roughness of the area after laser processing and etching is always higher than that of the area not etched by laser. Therefore, during the deposition process, it only occurs in the area after laser processing and etching, that is, only in the area of the desired structure or pattern, forming the desired Schottky junction.
[0069] Furthermore, the type of electrolyte and the specific type of metal anode are selected by the operator based on processing requirements.
[0070] Optionally, refer to Figure 4The Schottky junction processing method of the present invention further includes step S6: inspecting the formed Schottky junction using a transmission electron microscope; if the formed Schottky junction has no visible oxide layer and no lattice defects or vacancies, the processing is completed; otherwise, the processing is repeated.
[0071] In this embodiment, the establishment of transmission electron microscopy verification standards has constructed a method for inspecting the interface quality of Schottky junctions. The dual judgment criteria of oxide-free layer and lattice integrity allow for thorough inspection of the finished Schottky junction products, ensuring processing quality.
[0072] Example 2
[0073] Secondly, the present invention provides a Schottky junction fabrication system for implementing the Schottky junction fabrication method in Embodiment 1, the system comprising:
[0074] A processing platform is used to fix and mount semiconductor components to be processed.
[0075] The laser module, located above the processing platform, is used to perform laser etching on the semiconductor workpiece fixedly mounted on the processing platform to form a semiconductor workpiece with the required structure or pattern.
[0076] The acid solution module is used to immerse semiconductor workpieces with desired structures or patterns to obtain semi-finished products;
[0077] The electrochemical deposition module is used to perform electrochemical deposition operations on semi-finished products to obtain the required Schottky junctions.
[0078] In this embodiment, a Schottky junction processing system is provided, which integrates the entire process of Schottky junction processing. It can achieve high-precision Schottky junction manufacturing in an atmospheric pressure solution environment, significantly reducing equipment costs and energy consumption. At the same time, it breaks through the limitations of existing technologies in processing complex Schottky junctions and provides a new process path for Schottky junction processing.
[0079] Optionally, the processing platform in this invention includes a moving component and a fixed component. The fixed component is used to fix and install the semiconductor workpiece to be processed. The moving component is connected to the fixed component and is used to drive the fixed component and the semiconductor workpiece to be processed to move, so as to perform laser etching on the semiconductor workpiece to be processed by the laser module to form a semiconductor workpiece with the required structure or pattern.
[0080] Specifically, the mobile component in this embodiment is a six-degree-of-freedom mobile platform.
[0081] Furthermore, the Schottky junction processing system of the present invention includes a central control module and a display module, which are used to electrically connect with other components in the system, such as to electrically connect with the moving component to set and adjust the trajectory of the moving component driving the fixed component; to electrically connect with the laser component to adjust the parameters of the processing laser; and to display and monitor in real time through the display module.
[0082] Optionally, the Schottky junction processing system of the present invention further includes a transmission electron microscope for inspecting the acquired Schottky junction.
[0083] Example 3
[0084] On the other hand, the present invention also provides a Schottky junction, which is prepared based on the Schottky junction processing method in the above embodiment 1. The description of the above method can be found in embodiment 1, and will not be repeated for the purpose of brevity. The specific structure of the Schottky junction is set by those skilled in the art according to their needs, so it will not be elaborated here.
[0085] Example 4
[0086] To provide a more intuitive understanding of the Schottky junction processing method of the present invention, the present invention will be specifically illustrated through the following examples.
[0087] Example 1
[0088] In this example, to fabricate a Schottky junction of metallic copper and single-crystal silicon, the Schottky junction fabrication method of Embodiment 1 of this invention is adopted:
[0089] S1: Fix the monocrystalline silicon workpiece to be processed onto the processing platform;
[0090] S2: Based on the processing requirements, select the parameters of the processing laser as pulse width 230fs and repetition frequency 100kHz, and set the movement trajectory of the processing platform.
[0091] S3: Using a processing laser to perform laser etching on single-crystal silicon to form single-crystal silicon workpieces with the required structure or pattern;
[0092] S4: Prepare a 5% hydrofluoric acid solution, and immerse the monocrystalline silicon workpiece with the desired structure or pattern in the hydrofluoric acid solution for 5 minutes to remove the oxides on its surface and obtain a semi-finished product.
[0093] S5: Perform electrochemical deposition on the semi-finished product: Prepare copper sulfate electrolyte, place the semi-finished product into the electrolyte as the cathode, use metallic copper as the anode, apply a deposition voltage of 0.2V, and perform deposition for 10 minutes to obtain the required Schottky junction.
[0094] Example 2
[0095] In this example, to fabricate a Schottky junction of metallic copper and silicon carbide, the Schottky junction fabrication method of Embodiment 1 of this invention is adopted:
[0096] S1: Fix the silicon carbide workpiece to be processed onto the processing platform;
[0097] S2: Based on the processing requirements, select the parameters of the processing laser as pulse width 230fs and repetition frequency 100kHz, and set the movement trajectory of the processing platform.
[0098] S3: Laser etching is performed on silicon carbide using a processing laser to form silicon carbide workpieces with the required structure or pattern;
[0099] S4: Prepare a 2% hydrofluoric acid solution, and immerse the silicon carbide workpiece with the desired structure or pattern in the hydrofluoric acid solution for 10 minutes to remove the oxides on its surface and obtain a semi-finished product.
[0100] S5: Perform electrochemical deposition on the semi-finished product: Prepare copper sulfate electrolyte, place the semi-finished product into the electrolyte as the cathode, use metallic copper as the anode, apply a deposition voltage of 0.2V, and perform deposition for 10 minutes to obtain the required Schottky junction.
Claims
1. A method of fabricating a Schottky junction, characterized by, The Schottky junction processing method comprises: S1: fixing the semiconductor workpiece to be processed on a processing platform; S2: selecting the parameters of the processing laser and the movement parameters of the processing platform according to the processing requirements; S3: performing laser etching on the semiconductor workpiece to be processed by using the processing laser according to the selected parameters of the processing laser and the movement parameters of the processing platform, so as to form a semiconductor workpiece with a required structure or pattern; S4: immersing the semiconductor workpiece with the required structure or pattern in an acid solution to remove the oxide on the surface of the semiconductor workpiece with the required structure or pattern, so as to obtain a semi-finished product; S5: performing electrochemical deposition on the semi-finished product to obtain the required Schottky junction.
2. The Schottky junction processing method according to claim 1, characterized in that, The parameters of the processing laser in step S2 include the pulse width and the repetition frequency of the processing laser; The pulse width of the processing laser is less than 10 picoseconds, and the repetition frequency is less than 100 KHz; The movement parameters of the processing platform are generated according to the structure / pattern of the required Schottky junction; wherein the processing platform comprises a moving assembly and a fixed assembly, and the fixed assembly is used for fixedly mounting the semiconductor workpiece to be processed; The moving assembly is connected with the fixed assembly, and is used for driving the fixed assembly and the semiconductor workpiece to be processed to move, so as to perform laser etching on the semiconductor workpiece to be processed by using the laser module, so as to form a semiconductor workpiece with a required structure or pattern.
3. The Schottky junction processing method according to claim 1, characterized in that, In step S4, the following steps are included: S4.1: configuring a hydrofluoric acid solution, and determining the immersion time according to the concentration of the hydrofluoric acid solution; S4.2: placing the semiconductor workpiece with the required structure or pattern into the hydrofluoric acid solution; S4.3: performing ultrasonic cleaning on the semiconductor workpiece with the required structure or pattern in the hydrofluoric acid solution based on the immersion time, so as to obtain a semi-finished product.
4. The Schottky junction processing method according to claim 3, characterized in that, In step S4.1, the concentration of the configured hydrofluoric acid solution is 2% to 5%; and as the concentration of the hydrofluoric acid solution increases, the immersion time gradually becomes shorter, wherein when the concentration of the hydrofluoric acid solution is 2%, the immersion time is not more than 10 minutes, and when the concentration of the hydrofluoric acid solution is 5%, the immersion time is not more than 5 minutes.
5. The Schottky junction processing method according to claim 4, characterized in that, The step S5 specifically includes: S5.1: configuring an electrolyte according to the processing requirements; S5.2: placing the semi-finished product into the electrolyte as a cathode for electrochemical deposition, and inserting a metal anode into the electrolyte; S5.3: passing direct current into the semi-finished product and the metal anode to perform electrochemical deposition on the semi-finished product, so as to obtain the required Schottky junction.
6. The Schottky junction processing method according to claim 5, characterized in that, Further comprising step S6: using a transmission electron microscope to inspect the formed Schottky junction, if the formed Schottky junction has no visible oxide layer and no crystal lattice defects or vacancies, the processing is completed; otherwise, the processing is re-performed.
7. A Schottky junction processing system for implementing the Schottky junction processing method of claim 6, characterized by It comprises: a processing platform for fixedly mounting a semiconductor workpiece to be processed; a laser module above the processing platform, used for performing laser etching on the semiconductor workpiece to be processed fixedly mounted on the processing platform, so as to form a semiconductor workpiece with a required structure or pattern; an acid solution module, used for immersing the semiconductor workpiece with the required structure or pattern to obtain a semi-finished product; an electrochemical deposition module, used for performing electrochemical deposition on the semi-finished product to obtain the required Schottky junction.
8. The Schottky junction processing system of claim 7, wherein, The processing platform comprises a moving assembly and a fixed assembly, and the fixed assembly is used for fixedly mounting the semiconductor workpiece to be processed; The moving assembly is connected with the fixed assembly, and is used for driving the fixed assembly and the semiconductor workpiece to be processed to move, so as to perform laser etching on the semiconductor workpiece to be processed by the laser module, and form a semiconductor workpiece with a required structure or pattern.
9. The Schottky junction processing system of claim 7, wherein, The Schottky junction processing system further comprises a transmission electron microscope, which is used for inspecting the obtained Schottky junction.
10. A Schottky junction, characterized by The Schottky junction is generated based on the Schottky junction processing method in any one of claims 1 to 6.