Semiconductor device manufacturing method and semiconductor device

Abstract

The invention discloses a semiconductor device manufacturing method and a semiconductor device. The method specifically comprises the steps that a light-emitting chip and a driving IC are arranged on a carrier plate; manufacturing a packaging material film adhesive on the surfaces, far away from the carrier plate, of the light-emitting chip and the driving IC, so that the surfaces, far away from the carrier plate, of the light-emitting chip and the driving IC are flush in height; stripping the light-emitting chip and the driving IC from the carrier plate so as to expose electrodes on the light-emitting chip and the driving IC to the external environment; circuit layers are manufactured on the faces, away from the packaging material thin film adhesive, of the light-emitting chip and the driving IC, and the circuit layers are used for connecting electrodes on the light-emitting chip and the driving IC so that the driving IC can provide driving current for the light-emitting chip. According to the invention, leads and support plates are not needed, so that the semiconductor device is ultrathin; in addition, the semiconductor device is stable in performance, excellent in air tightness and high in light transmittance, the light-emitting chip does not need to be fixed to the carrier plate through insulating glue, and the potential lamp failure risk caused by long-time work is effectively avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor device manufacturing, in particular to a semiconductor device manufacturing method and a semiconductor device. BACKGROUND

[0002] At present, the packaging of LED light emitting chips is usually to fix the light emitting chip and the driving IC on the carrier board through tin paste, silver glue or insulating glue, and then to connect the solder points on the light emitting chip and the driving IC together by soldering wires, so as to realize that the driving IC provides driving current for the light emitting chip. However, this packaging method has some disadvantages: on the one hand, the thickness of the carrier board itself is relatively thick, which limits the possibility of further thinning of the packaging structure, and it is difficult to meet the needs of certain specific application scenarios; on the other hand, there is a risk of falling off between the soldering wires and the solder points; moreover, the tin paste, silver glue or insulating glue is easy to be damp in the process of long-time operation of the light emitting chip, and thus the LED lamp faces the potential risk of dead lamp. Therefore, we propose a semiconductor device manufacturing method for improvement. SUMMARY

[0003] The purpose of the present application is to improve and innovate in view of the shortcomings and problems in the background art, and to provide a semiconductor device manufacturing method and a semiconductor device.

[0004] According to a first aspect of the present application, a semiconductor device manufacturing method is provided, which specifically comprises the following steps: Step S1, arranging a light emitting chip and a driving IC on a carrier board; wherein the electrodes on the light emitting chip and the driving IC are located on the same side; Step S2, making a packaging material thin film glue on the side of the light emitting chip and the driving IC away from the carrier board, so that the light emitting chip and the driving IC are flush in height on the side away from the carrier board; wherein the packaging material thin film glue is made of transparent or semi-transparent material; Step S3, peeling the light emitting chip and the driving IC from the carrier board, so that the electrodes on the light emitting chip and the driving IC are exposed to the external environment; Step S4, making a circuit layer on the side of the light emitting chip and the driving IC away from the packaging material thin film glue, the circuit layer being used to connect the electrodes on the light emitting chip and the driving IC together, so that the driving IC can provide driving current for the light emitting chip.

[0005] Further, the step S1 specifically comprises: The light emitting chip is mounted on the carrier board, and the driving IC is flip-chip mounted on the carrier board, so that the electrodes on the light emitting chip and the driving IC are flush in height.

[0006] Further, the step S1 specifically further comprises: Cut the UV film or blue film to the appropriate size according to the requirement, and cover the surface of the carrier plate; Arrange multiple light emitting chips and driving ICs on the UV film or blue film by die bonder or mass transfer equipment.

[0007] Further, the step S2 specifically includes: Apply the encapsulation material solution on the side of the light emitting chips and driving ICs away from the carrier plate, while filling the space between the light emitting chips and driving ICs; Put the coated sample in a drying device to remove the solvent in the encapsulation material solution; Make the encapsulation material cross-linking reaction under high temperature conditions to form a thin film.

[0008] Further, the step S2 specifically includes: Control the encapsulation material coating thickness by the scraper height or coating speed, so that the encapsulation material thin film on the light emitting chips and driving ICs is flush in height.

[0009] Further, the step S3 specifically includes: First, tear the UV film or blue film from the carrier plate to peel the light emitting chips and driving ICs from the carrier plate; Tear the UV film or blue film from the light emitting chips and driving ICs to expose the electrodes on the light emitting chips and driving ICs to the external environment.

[0010] Further, the step S4 specifically includes: Step S41, deposit a metal circuit layer on the side of the light emitting chips and driving ICs away from the encapsulation material thin film by sputtering process; Step S42, coat photoresist on the metal circuit layer deposited by sputtering, and expose and develop the photoresist according to the circuit pattern, so that the photoresist corresponding to the circuit pattern remains; Step S43, selectively remove the metal circuit layer not protected by the photoresist by dry etching or wet etching; Step S44, remove the photoresist on the metal circuit layer corresponding to the circuit pattern; wherein the metal circuit layer corresponding to the circuit pattern is used to connect the electrodes on the light emitting chips and driving ICs together, so that the driving IC can provide driving current to the light emitting chips.

[0011] Further, the encapsulation material thin film can use epoxy resin or silicone or polyimide.

[0012] According to a second aspect of the present application, there is provided a semiconductor device manufactured by the method for manufacturing a semiconductor device as described above, comprising: a light emitting chip; a driving IC, the driving IC and the electrodes on the light emitting chip being located on the same side; a packaging material film adhesive, the packaging material film adhesive being arranged on the side of the light emitting chip and the driving IC away from the electrodes thereof and filled between the light emitting chip and the driving IC; a circuit layer for connecting the electrodes on the light emitting chip and the driving IC together so that the driving IC can provide driving current to the light emitting chip.

[0013] Compared with the prior art, the present application has the following beneficial effects: the present application provides a method for manufacturing a semiconductor device, wherein a UV film or a blue film is first covered on a carrier plate, then the light emitting chip 1 and the driving IC 2 are arranged in a matrix on the UV film or the blue film, wherein the light emitting chip is mounted on the carrier plate and the driving IC is flip-chip mounted on the carrier plate; then a packaging material film adhesive of transparent or semi-transparent material is made on the side of the light emitting chip and the driving IC away from the carrier plate, so that the light emitting chip and the driving IC are flush in height on the side away from the carrier plate; then the light emitting chip and the driving IC are peeled off from the carrier plate, so that the electrodes on the light emitting chip and the driving IC are exposed to the external environment; wherein the carrier plate can be recycled and reused; finally, a circuit layer is made on the side of the light emitting chip and the driving IC away from the packaging material film adhesive, the circuit layer being used for connecting the electrodes on the light emitting chip and the driving IC together so that the driving IC can provide driving current to the light emitting chip; thus, without lead wires and the carrier plate, the present application realizes the ultra-thin design of the semiconductor device when the driving IC provides driving current to the light emitting chip; in addition, the semiconductor device has stable performance and excellent air tightness, has high light transmittance due to the thin thickness and the transparent material of the packaging material film adhesive; and the light emitting chip does not need to be fixed on the carrier plate by means of tin paste, silver adhesive and insulating adhesive, effectively avoiding the potential risk of dead light under long-time work. At the same time, the manufacturing process of the semiconductor device of the present application is more concise, has a wide application prospect, and can be applied in the fields of color-changing skin lamp, color-changing lamp strip, direct display television, transparent display screen, automobile atmosphere lamp, automobile head-up display, automobile glass, watch and AR glasses, etc. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 a flowchart of a method for manufacturing a semiconductor device provided by an embodiment of the present application; Figure 2 a structural diagram of a carrier plate provided by an embodiment of the present application, the carrier plate being arranged with a light emitting chip and a driving IC; Figure 3A structure schematic diagram of a carrier plate provided by an embodiment of the present application after a packaging material film adhesive is made; Figure 4 A structure schematic diagram of a semiconductor device provided by an embodiment of the present application.

[0015] The figure marks: 1, light emitting chip; 2, driving IC; 3, carrier plate; 4, adhesive tape; 5, packaging material film adhesive; 6, circuit layer. DETAILED DESCRIPTION

[0016] In order to make the objects, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described in detail below with reference to the drawings.

[0017] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terminology used in the description of the present application herein only for the purpose of describing specific embodiments and is not intended to limit the present application. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0018] Embodiment 1 Please refer to Figure 1 The present application provides a semiconductor device manufacturing method, specifically comprising the following steps: Step S1, arranging a light emitting chip 1 and a driving IC 2 on a carrier plate 3; wherein the electrodes on the light emitting chip 1 and the driving IC 2 are located on the same side; The light emitting chip 1 includes R, G, B three color light emitting chips 1, and can also include any one of the R, G, B three color light emitting chips 1; here is not specifically limited, but can be determined according to the application environment. The driving IC 2 is used to convert the input voltage into constant current to drive the light emitting chip 1 to run efficiently.

[0019] In order to realize the arrangement of the light emitting chip 1 and the driving IC 2 on the carrier plate 3, as Figure 2 shown, the light emitting chip 1 and the driving IC 2 can be fixed on the carrier plate 3 by using an adhesive tape 4; the adhesive tape 4 can use UV film or blue film, and can also use other materials, which is not specifically limited. Specifically, the UV film or blue film is cut to the appropriate size according to the requirements, and is covered on the surface of the flat carrier plate 3; the light emitting chip 1 and the driving IC 2 are arranged in matrix on the UV film or blue film by using a die bonding machine or a mass transfer device, so as to complete the arrangement of the light emitting chip 1 and the driving IC 2 on the carrier plate 3.

[0020] It should be noted that the size of the carrier plate 3 is usually 120mm*120mm*0.2mm, the carrier plate 3 is usually made of opaque material, and the thickness can reach more than 0.2mm; the shapes of the light emitting chip 1 and the driving IC 2 are usually cubes or cuboids. Among them, the front surface of the light emitting chip 1 is the light emitting surface; the back surface of the light emitting chip 1 is provided with two electrodes, and the electrodes of the light emitting chip 1 are made of metal material; preferably, the material of the electrodes of the light emitting chip 1 is gold. The front surface of the driving IC 2 is provided with a plurality of electrodes, and the electrodes of the driving IC 2 are also made of metal material; preferably, the material of the electrodes of the driving IC 2 is aluminum.

[0021] It should be further pointed out that the size of the carrier plate 3 provided above is only an example, and the specific size of the carrier plate 3 can be set according to the needs, and the R, G, and B light emitting chips 1 and the driving IC 2 are arranged in two groups on the carrier plate 3. Those skilled in the art can arrange N groups on the carrier plate 3 according to actual needs.

[0022] In some preferred embodiments, since the electrodes of the light emitting chip 1 are located on the back surface thereof, and the electrodes of the driving IC 2 are located on the front surface thereof; in order to make the electrodes of the light emitting chip 1 and the driving IC 2 located on the same side; therefore, the light emitting chip 1 can be mounted on the carrier plate 3 in a normal direction, and the driving IC 2 can be mounted on the carrier plate 3 in a flip direction; in this way, the electrodes on the light emitting chip 1 and the driving IC 2 are located on the same side in contact with the carrier plate 3; and the electrodes on the light emitting chip 1 and the driving IC 2 are ensured to be flush in the height direction.

[0023] Step S2, a thin film of packaging material 5 is made on the side of the light emitting chip 1 and the driving IC 2 away from the carrier plate 3, so that the light emitting chip 1 and the driving IC 2 are flush in height on the side away from the carrier plate 3; wherein the thin film of packaging material 5 is made of transparent or translucent material; Specifically, the thin film of packaging material 5 can be made of epoxy resin or silicone or polyimide, or other transparent or translucent packaging materials, which are not limited in the present application and all belong to the protection scope of the present application.

[0024] It can be understood that since the light emitting surface of the light emitting chip 1 corresponds to the thin film of packaging material 5, and the thin film of packaging material 5 is made of transparent or translucent material; therefore, the thin film of packaging material 5 will not hinder the light emitted by the light emitting chip 1 from being irradiated out.

[0025] Optionally, as Figure 3As shown, step S2 specifically includes: coating the encapsulation material solution onto the side of the light-emitting chip 1 and the driving IC2 away from the carrier plate 3, while filling the space between the light-emitting chip 1 and the driving IC2; the coating thickness of the encapsulation material is controlled by the height of the scraper or the coating speed; placing the coated sample in a drying device to remove the solvent in the encapsulation material solution; and causing the encapsulation material to undergo a cross-linking reaction under high temperature conditions to form a thin film, thereby improving mechanical strength and thermal stability.

[0026] It should be noted that, due to the difference in thickness between the light-emitting chip 1 and the driver IC2, the driver IC2 is usually thicker. In addition, since the electrodes of the light-emitting chip 1 and the driver IC2 are in contact with the adhesive tape 4 on the carrier board 3, the sides of the light-emitting chip 1 and the driver IC2 away from the carrier board 3 will not be flush in height. Therefore, in order to make the sides of the light-emitting chip 1 and the driver IC2 flush in height, the thickness of the encapsulation material film 5 corresponding to the light-emitting chip 1 and the driver IC2 will be different, and the thickness of the encapsulation material film 5 corresponding to the light-emitting chip 1 will be relatively thicker.

[0027] It should be further noted that the present invention is not limited to forming the encapsulation material film adhesive 5 by coating on the side of the light-emitting chip 1 and the driver IC2 away from the carrier board 3. Other methods such as spraying, scraping, and pressing can also be used. Without departing from the core idea of ​​the present invention, any process method that can realize the formation of the encapsulation material film adhesive 5 on the side of the light-emitting chip 1 and the driver IC2 away from the carrier board 3 is within the protection scope of this application.

[0028] Step S3: Peel the light-emitting chip 1 and the driver IC2 off the carrier board 3 so that the electrodes on the light-emitting chip 1 and the driver IC2 are exposed to the external environment. As described above, the light-emitting chip 1 and the driver IC2 are fixed to the carrier plate 3 by a UV film or a blue film. Therefore, the UV film or blue film can be peeled off from the carrier plate 3 first, thereby peeling the light-emitting chip 1 and the driver IC2 off the carrier plate 3. Then, the UV film or blue film is peeled off from the light-emitting chip 1 and the driver IC2. At this time, the electrodes on the light-emitting chip 1 and the driver IC2 are exposed to the external environment, and the light-emitting surface of the light-emitting chip 1 is facing the encapsulation material film adhesive 5. Since the encapsulation material film adhesive 5 is a transparent or semi-transparent material, it will not affect the light emitted by the light-emitting chip 1.

[0029] Step S4: A circuit layer 6 is formed on the side of the light-emitting chip 1 and the driver IC2 away from the encapsulation material film adhesive 5. The circuit layer 6 is used to connect the electrodes on the light-emitting chip 1 and the driver IC2 together so that the driver IC2 can provide driving current to the light-emitting chip 1. Optionally, step S4 specifically includes the following steps: Step S41: Deposit a metal circuit layer 6 on the side of the light-emitting chip 1 and the driver IC2 away from the encapsulation material thin film adhesive 5 by sputtering process; Step S42: Coat the metal circuit layer 6 obtained by sputtering deposition with photoresist, and expose and develop the photoresist according to the circuit pattern so that the photoresist corresponding to the circuit pattern is retained. Specifically, a photosensitive film layer is coated on the surface of the sputtered deposited metal circuit layer 6. In this embodiment, the photosensitive film layer can be a positive photoresist or a negative photoresist; preferably, a negative photoresist is used. Then, a photomask is used for exposure; wherein the light-transmitting area of ​​the photomask corresponds to the area corresponding to the circuit pattern. Since the area corresponding to the circuit pattern is irradiated by ultraviolet light, the molecules in the exposed area of ​​the negative photoresist undergo a cross-linking reaction under ultraviolet light irradiation, forming a network structure insoluble in the developing solution. Therefore, after immersing the exposed semiconductor device in a chemical developing solution, the chemical developing solution dissolves the photosensitive film layer on areas not corresponding to the circuit pattern, while retaining the photosensitive film layer on areas corresponding to the circuit pattern.

[0030] Step S43: Selectively remove the metal circuit layer 6 that is not protected by photoresist by dry etching or wet etching; By selectively removing the metal circuit layer 6 that is not protected by photoresist; and the metal circuit layer 6 protected by photoresist corresponds to the circuit pattern, a metal circuit layer 6 corresponding to the circuit pattern is formed on the semiconductor device. The metal circuit layer 6 corresponding to the circuit pattern is used to connect the electrodes on the light-emitting chip 1 and the driver IC2 together, so that the driver IC2 can provide driving current to the light-emitting chip 1.

[0031] Step S44: Remove the photoresist on the metal circuit layer 6 corresponding to the circuit pattern; Finally, the photoresist on the metal circuit layer 6 corresponding to the circuit pattern is cleaned using a photoresist remover.

[0032] It is understood that the semiconductor device is sputtered, photolithographically etched and etched to obtain the circuit layer 6. The circuit layer 6 is used to connect the electrodes on the light-emitting chip 1 and the driver IC2 together, so that the driver IC2 can provide driving current to the light-emitting chip 1. Therefore, the present invention achieves the ultra-thinning of the semiconductor device without the need for leads or carrier plate 3 when the driver IC2 provides current to the light-emitting chip 1.

[0033] In summary, this invention provides a semiconductor device manufacturing method. First, a UV film or blue film is applied to a carrier substrate 3. Then, a light-emitting chip 1 and a driver IC 2 are arranged in a matrix on the UV film or blue film, with the light-emitting chip 1 mounted upright on the carrier substrate 3 and the driver IC 2 flip-mounted on the carrier substrate 3. Next, a transparent or semi-transparent encapsulation film 5 is formed on the side of the light-emitting chip 1 and driver IC 2 away from the carrier substrate 3, so that the light-emitting chip 1 and driver IC 2 are flush in height on the side away from the carrier substrate 3. Then, the light-emitting chip 1 and driver IC 2 are peeled off from the carrier substrate 3, exposing the electrodes on the light-emitting chip 1 and driver IC 2 to the external environment. The carrier substrate 3 can be reused. Finally, the method is described in section 3. A circuit layer 6 is fabricated on the side of the light-emitting chip 1 and the driver IC2 away from the encapsulation material film 5. This circuit layer 6 connects the electrodes on the light-emitting chip 1 and the driver IC2, enabling the driver IC2 to provide driving current to the light-emitting chip 1. Therefore, this invention achieves an ultra-thin semiconductor device design without the need for leads and a carrier board 3, while the driver IC2 provides driving current to the light-emitting chip 1. Furthermore, this semiconductor device exhibits stable performance and excellent hermeticity. Due to the thin and transparent encapsulation material film, the semiconductor device has high light transmittance. Moreover, the light-emitting chip 1 does not need to be fixed to the carrier board 3 using solder paste, silver paste, and insulating adhesive, effectively avoiding the potential risk of lamp failure during prolonged operation. Simultaneously, the manufacturing process of this semiconductor device is simpler, offering broad application prospects. It can be applied to fields such as iridescent LED strips, iridescent LED light bars, direct-view TVs, transparent displays, automotive ambient lighting, automotive head-up displays, automotive glass, watches, and AR glasses.

[0034] Example 2 Please see Figure 4 The present invention also provides a semiconductor device, which is manufactured using the semiconductor device manufacturing method described in Example 1, and the semiconductor device includes: LED chip 1; The driving IC2 and the electrodes on the light-emitting chip 1 are located on the same side; The encapsulation material film adhesive 5 is disposed on the side of the light-emitting chip 1 and the driving IC2 away from their electrodes and is filled between the light-emitting chip 1 and the driving IC2. Circuit layer 6 is used to connect the electrodes on the light-emitting chip 1 and the driver IC2 together, so that the driver IC2 can provide driving current to the light-emitting chip 1.

[0035] It is understood that the present invention enables the semiconductor device to be ultra-thin without the need for leads and carrier board 3 when the driver IC2 provides driving current to the light-emitting chip 1, thus enabling the semiconductor device to meet the needs of certain specific application scenarios. In addition, the semiconductor device has stable performance and excellent hermeticity, and the light-emitting chip 1 does not need to be fixed to the carrier board 3 with solder paste, silver paste and insulating glue, effectively avoiding the potential risk of dead light under long-term operation.

[0036] It should be understood that those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims. Parts not described in detail in this specification are prior art known to those skilled in the art.

[0037] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example.

[0038] Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The reference to "embodiment" herein means that a specific feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of this application. The appearance of this phrase in various places in the specification does not necessarily indicate the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application. Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A method of manufacturing a semiconductor device, characterized by, Specifically comprising the following steps: Step S1, arranging the light emitting chip (1) and the driving IC (2) on the carrier board (3); wherein the electrodes on the light emitting chip (1) and the driving IC (2) are located on the same side; Step S2, making a packaging material film glue (5) on the side of the light emitting chip (1) and the driving IC (2) away from the carrier board (3), so that the light emitting chip (1) and the driving IC (2) are flush in height on the side away from the carrier board (3); wherein the packaging material film glue (5) is made of transparent or semi-transparent material; Step S3, peeling the light emitting chip (1) and the driving IC (2) from the carrier board (3), so that the electrodes on the light emitting chip (1) and the driving IC (2) are exposed to the external environment; Step S4, making a circuit layer (6) on the side of the light emitting chip (1) and the driving IC (2) away from the packaging material film glue (5), the circuit layer (6) being used to connect the electrodes on the light emitting chip (1) and the driving IC (2) together, so that the driving IC (2) can provide driving current for the light emitting chip (1).

2. The method of manufacturing a semiconductor device according to claim 1, wherein The step S1 specifically comprises: The light emitting chip (1) is mounted on the carrier board (3) in a normal direction, and the driving IC (2) is mounted on the carrier board (3) in a flip direction, so that the electrodes on the light emitting chip (1) and the driving IC (2) are flush in height.

3. The method of manufacturing a semiconductor device according to claim 2, wherein The step S1 specifically further comprises: The UV film or the blue film is cut to a suitable size according to requirements and covered on the surface of the carrier board (3); A plurality of light emitting chips (1) and driving ICs (2) are arranged on the UV film or the blue film by a die bonder or a mass transfer device.

4. The method of manufacturing a semiconductor device according to claim 1, wherein The step S2 specifically comprises: The packaging material solution is coated on the side of the light emitting chip (1) and the driving IC (2) away from the carrier board (3), while filling between the light emitting chip (1) and the driving IC (2); The coated sample is placed in a drying device to remove the solvent in the packaging material solution; The packaging material is cross-linked to form a film under high temperature conditions.

5. The method of manufacturing a semiconductor device according to claim 4, wherein The step S2 specifically further comprises: The coating thickness of the packaging material is controlled by the height of the scraper or the coating speed, so that the packaging material film glue on the light emitting chip (1) and the driving IC (2) is flush in height.

6. The method of manufacturing a semiconductor device according to claim 3, wherein The step S3 specifically comprises: First, the UV film or the blue film is torn off from the carrier board (3) to peel the light emitting chip (1) and the driving IC (2) from the carrier board (3); The UV film or the blue film is torn off from the light emitting chip (1) and the driving IC (2) to expose the electrodes on the light emitting chip (1) and the driving IC (2) to the external environment.

7. The method of claim 1, wherein The step S4 specifically comprises: Step S41, depositing a metal circuit layer (6) on the side of the light emitting chip (1) and the driving IC (2) away from the packaging material film glue (5) by a sputtering process; Step S42, coating a photoresist on the metal circuit layer (6) deposited by sputtering, and exposing and developing the photoresist according to the circuit pattern, so that the photoresist corresponding to the circuit pattern is retained; Step S43, the metal circuit layer (6) not protected by the photoresist is selectively removed by dry etching or wet etching; Step S44, the photoresist on the metal circuit layer (6) corresponding to the circuit pattern is removed; wherein the metal circuit layer (6) corresponding to the circuit pattern is used to connect the electrodes on the light emitting chip (1) and the driving IC (2) together, so that the driving IC (2) can provide driving current for the light emitting chip (1).

8. The method of claim 1, wherein The encapsulating material film adhesive (5) can be epoxy resin or silicon glue or polyimide.

9. A semiconductor device, characterized by comprising: The semiconductor device is made by the manufacturing method of the semiconductor device in any one of claims 1 to 8, and comprises: a light emitting chip (1); a driving IC (2), the electrodes on the driving IC (2) and the light emitting chip (1) are located on the same side; an encapsulating material film adhesive (5), the encapsulating material film adhesive (5) is arranged on the side of the light emitting chip (1) and the driving IC (2) away from the electrodes and filled between the light emitting chip (1) and the driving IC (2); a circuit layer (6), the circuit layer (6) is used to connect the electrodes on the light emitting chip (1) and the driving IC (2) together, so that the driving IC (2) can provide driving current for the light emitting chip (1).

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