Optoelectronic component module and method for operating same

Abstract

The present disclosure provides an optoelectronic component module including a first electrode, a photoactive layer, and a circuit module. The first electrode is opaque. The photoactive layer is disposed on the first electrode. The circuit module is arranged on the optical active layer, the circuit module comprises a semiconductor substrate and a second electrode, and the second electrode is arranged between the optical active layer and the semiconductor substrate. The semiconductor substrate has a transmittance of less than 1% for light having a wavelength of less than 1000 nm and a transmittance of more than 10% for light having a wavelength of 1050 nm to 5500 nm. The semiconductor substrate can be used as an optical filter of the photoelectric component module, and other optical filters do not need to be arranged in the photoelectric component module, so that the property of the photoelectric component module can be prevented from being influenced by a process for manufacturing the optical filter. The photoelectric component module of the present disclosure may have excellent photoelectric characteristics, a light, thin and simplified structure, and may reduce manufacturing cost.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a photoelectric component module and an operating method thereof. BACKGROUND

[0002] A photoelectric sensor refers to an electronic component that can convert a light source into an electrical signal. It can be classified as a photodiode component, a photoresistor, or a phototransistor. A photodiode component can generate a corresponding current response under the irradiation of light of different intensities, thereby achieving the effect of sensing light intensity and rectifying the current. In order to improve the performance (such as photoelectric conversion efficiency, sensitivity, light-emitting wavelength range, and / or photosensitive wavelength range) of the photodiode and reduce the cost of the photodiode, many new materials that can be applied to the photodiode have been developed. However, these materials can be easily damaged in the process. For example, the high temperature of the process of manufacturing a light filter can damage these materials. SUMMARY

[0003] The present disclosure provides a photoelectric component module, which includes a first electrode, a photoactive layer, and a circuit module. The first electrode is opaque. The photoactive layer is disposed on the first electrode. The circuit module is disposed on the photoactive layer, wherein the circuit module includes a semiconductor substrate and a second electrode, the second electrode is disposed between the photoactive layer and the semiconductor substrate. The semiconductor substrate has a transmittance of less than 1% for light with a wavelength of less than 1000 nm and a transmittance of higher than 10% for light with a wavelength of 1050 nm to 1100 nm. 55 00nm.

[0004] In some embodiments, the material of the semiconductor substrate includes silicon.

[0005] In some embodiments, the material of the first electrode includes silver, gold, aluminum, copper, molybdenum, titanium, tungsten, titanium nitride, carbon material, or a combination thereof.

[0006] In some embodiments, the photoelectric component module further includes an encapsulation layer, wherein the encapsulation layer is opaque and covers the side and bottom surfaces of the first electrode and the side surface of the photoactive layer.

[0007] In some embodiments, the second electrode is transparent.

[0008] In some embodiments, the circuit module further includes a conductive line embedded in the semiconductor substrate and electrically connected to the second electrode. A portion of the conductive line that overlaps the second electrode in a top view has a first area, and the second electrode has a second area in a top view, the first area being smaller than the second area.

[0009] In some embodiments, the optoelectronic component module further comprises a first carrier transport layer and a second carrier transport layer. The first carrier transport layer is disposed between the first electrode and the photoactive layer. The second carrier transport layer is disposed between the photoactive layer and the circuit module.

[0010] In some embodiments, the circuit module further comprises a light-transmissive insulating layer disposed between the photoactive layer and the semiconductor substrate, and the second electrode is embedded in the light-transmissive insulating layer.

[0011] The present disclosure provides a method of operating an optoelectronic component module, comprising receiving light through the optoelectronic component module as described in any of the preceding embodiments, wherein the upper surface of the circuit module is the light-receiving surface.

[0012] The present disclosure provides an optoelectronic component module, comprising a circuit module comprising a first semiconductor substrate and a first electrode, a photoactive layer, a second electrode, and a second semiconductor substrate. The photoactive layer is disposed on the circuit module, wherein the first electrode is disposed between the first semiconductor substrate and the photoactive layer. The second electrode is disposed on the photoactive layer, and the second electrode is light-transmissive. The second semiconductor substrate is disposed on the second electrode. The second semiconductor substrate has a transmittance of less than 1% for light having a wavelength of less than 1000 nm and a transmittance of more than 10% for light having a wavelength of 1050 nm to 5500 nm.

[0013] In some embodiments, the photoactive layer comprises a first photoactive layer and a second photoactive layer that are interfolded, and the first photoactive layer and the second photoactive layer are in direct contact with each other to form a junction interface.

[0014] In some embodiments, the optoelectronic component module further comprises a third electrode, wherein the third electrode is disposed between the photoactive layer and the second electrode.

[0015] In some embodiments, the optoelectronic component module further comprises a first carrier transport layer and a second carrier transport layer. The first carrier transport layer is disposed between the circuit module and the photoactive layer. The second carrier transport layer is disposed between the photoactive layer and the second electrode.

[0016] In some embodiments, the material of the second semiconductor substrate comprises silicon.

[0017] In some embodiments, the second electrode comprises a transparent conductive oxide (TCO), a transparent conductive polymer, a nano-silver wire, a metal-containing layer having a thickness of less than or equal to 15 nm, or a combination thereof.

[0018] This disclosure provides a method for operating an optoelectronic component module, which includes receiving light through the optoelectronic component module described in any of the foregoing embodiments, wherein the optoelectronic component module has a light-receiving surface, which is the upper surface, lower surface, or a combination thereof of the optoelectronic component module. Attached Figure Description

[0019] This disclosure can be more fully understood by reading the following detailed description of the embodiments and referring to the accompanying drawings.

[0020] Figure 1A and Figure 1B This is a cross-sectional schematic diagram of an optoelectronic component module according to various embodiments of the present disclosure;

[0021] Figure 2 This is a top view schematic diagram of the conductive circuit and the second electrode according to various embodiments of the present disclosure.

[0022] Figure 3 This is a flowchart of a method for manufacturing an optoelectronic component module according to various embodiments of the present disclosure;

[0023] Figure 4 A cross-sectional schematic diagram showing an intermediate stage in the manufacture of an optoelectronic component module according to various embodiments of this disclosure;

[0024] Figure 5 This is a cross-sectional schematic diagram of an optoelectronic component module according to various embodiments of the present disclosure;

[0025] Figures 6 to 11 Cross-sectional schematic diagrams are shown for intermediate stages of manufacturing optoelectronic component modules according to various embodiments of this disclosure.

[0026] Figure 12 and Figure 15 These are cross-sectional schematic diagrams of the optoelectronic component modules of Comparative Example 1 and Example 1, respectively.

[0027] Figure 13 The absorption spectra of the P-type organic semiconductor and the N-type organic semiconductor in the photoactive layer of Comparative Example 1 are shown.

[0028] Figure 14 and Figure 16 The external quantum efficiency-wavelength relationship diagrams are for the optoelectronic component modules of Comparative Example 1 and Example 1, respectively.

[0029] Figure 17 and Figure 19 These are cross-sectional schematic diagrams of the optoelectronic component modules of Comparative Example 2 and Example 2, respectively.

[0030] Figure 18 and Figure 20External quantum efficiency-wavelength relationship diagrams of the photoelectric component modules of Comparative Example 2 and Example 2, respectively.

[0031] Reference signs:

[0032] 100, 100', 500, 500', 500": photoelectric component module

[0033] 110, 520, 520', 520": photoelectric conversion module

[0034] 112, 514: first electrode

[0035] 114, 521: first carrier transport layer

[0036] 116, 522, 522': photoactive layer

[0037] 118, 523: second carrier transport layer

[0038] 120, 120', 510: circuit module

[0039] 122: semiconductor substrate

[0040] 123: light-transmissive insulating layer

[0041] 124, 524: second electrode

[0042] 126: conductive line

[0043] 128, 516: readout circuit

[0044] 130, 130': encapsulation layer

[0045] 132: insulating layer

[0046] 134: metal layer

[0047] 300: method

[0048] 310, 320, 330: operation

[0049] 512: first semiconductor substrate

[0050] 522A: first photoactive layer

[0051] 522B: second photoactive layer

[0052] 524': third electrode

[0053] 525: second semiconductor substrate

[0054] 1200, 1500, 1700, 1900: photoelectric component module

[0055] 1210, 1710: glass substrate

[0056] 1220, 1720: ITO layer

[0057] 1220', 1720': IZO layer

[0058] 1230, 1230', 1730, 1730': zinc oxide layer

[0059] 1240, 1740: photoactive layer

[0060] 1250, 1750: molybdenum trioxide layer

[0061] 1260, 1760: silver electrode

[0062] 1300P, 1300N: absorption spectrum

[0063] 1510, 1910: silicon substrate

[0064] 1520, 1920: light-transmitting insulating layer

[0065] A1: first area

[0066] A2: second area

[0067] L1, L2, L3, L4: light ray DETAILED DESCRIPTION

[0068] A number of implementations have been detailed above. It will be apparent to those skilled in the art that various modifications can be made to the implementations described without departing from the scope of the disclosure. Thus, the breadth and scope of the present disclosure should not be limited by any of the above-described implementations, but should be defined only in accordance with the following claims and their equivalents.

[0069] It should be understood that although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

[0070] Although the following illustrates the disclosed methods using a series of operations or steps, the order in which the operations or steps are presented should not be construed as a limitation of the disclosure. For example, certain operations or steps can be performed in different order and / or concurrently with other steps. Moreover, not all illustrated operations, steps, and / or features can be required to implement an embodiment of the disclosure. Furthermore, each of the operations or steps described herein can include sub-steps or actions.

[0071] The present disclosure provides a photoelectric assembly module and an operating method thereof. The photoelectric assembly module can use a semiconductor substrate as a filter of the photoelectric assembly module, which does not allow visible light to pass through but allows short-wave infrared (SWIR) light to pass through, so as to avoid interfering with signal detection of the photoelectric assembly module. The semiconductor substrate is connected to a photoelectric conversion module of the photoelectric assembly module through a bonding operation, and no other filter needs to be arranged in the photoelectric assembly module, so as to avoid affecting the properties of the photoelectric assembly module due to a process (e.g., a deposition process) for manufacturing the filter. The photoelectric assembly module of the present disclosure can have excellent photoelectric properties, a light, thin, and simple structure, and can reduce manufacturing costs, and can be applied to, for example, an advanced driver assistance system (ADAS), defect detection, or machine vision.

[0072] The present disclosure provides a photoelectric assembly module. Figure 1A is a cross-sectional schematic view of a photoelectric assembly module 100 according to various embodiments of the present disclosure. The photoelectric assembly module 100 includes a photoelectric conversion module 110 and a circuit module 120 that are bonded to each other. The photoelectric conversion module 110 includes a first electrode 112, a first carrier transport layer 114, a photoactive layer 116, and a second carrier transport layer 118. The first carrier transport layer 114 is disposed on the first electrode 112. The photoactive layer 116 is disposed on the first carrier transport layer 114. The second carrier transport layer 118 is disposed on the photoactive layer 116. The circuit module 120 is disposed on the second carrier transport layer 118. The circuit module 120 includes a semiconductor substrate 122 and second electrodes 124 that are spaced apart and disposed between the second carrier transport layer 118 and the semiconductor substrate 122. In some embodiments, the circuit module 120 further includes a conductive line 126 embedded in the semiconductor substrate 122 and electrically connected to the second electrodes 124 and a readout circuit (ROIC) 128 that can receive a signal generated by the photoelectric conversion module 110. The readout circuit 128 can include a thin-film transistor (TFT). For simplicity of the drawings, Figure 1AOnly one conductive line 126 is shown, but Figure 1A Each of the second electrodes 124 can be electrically connected to its corresponding readout circuit 128 via a corresponding conductive line. The number of second electrodes 124 is not limited. Figure 1A The number of second electrodes 124 can be adjusted arbitrarily according to design requirements. The optoelectronic component module 100 can be used as a photosensitive component or an image sensing component. Figure 1B This is a cross-sectional schematic diagram of an optoelectronic component module 100' according to various embodiments of the present disclosure. The difference between optoelectronic component module 100' and optoelectronic component module 100 is that the circuit module 120' of optoelectronic component module 100' further includes a light-transmitting insulating layer 123, which is disposed between the photoactive layer 116 and the semiconductor substrate 122, and the second electrode 124 is embedded in the light-transmitting insulating layer 123. The light-transmitting insulating layer 123 prevents leakage current and unintended conduction. The light-transmitting insulating layer 123 allows light with wavelengths from 1000 nm to 5500 nm to pass through. In some embodiments, the light-transmitting insulating layer 123 includes silicon nitride, silicon dioxide, parylene, epoxy resin, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyimide, or combinations thereof.

[0073] Please refer to this again. Figure 1A The circuit module 120 of the optoelectronic component module 100 disclosed herein has self-filtering characteristics. More specifically, the semiconductor substrate 122 does not allow visible light to pass through, but allows short-wave infrared (SWIR) light to pass through. The semiconductor substrate 122 can act as a filter to filter light with wavelengths less than 1000 nm, filtering out unwanted light to avoid interfering with signal detection. More specifically, the semiconductor substrate 122 has a transmittance of less than 1% for light with wavelengths less than 1000 nm and a transmittance of more than 10% for light with wavelengths from 1050 nm to 5500 nm, such as 1050, 1500, 2000, 2500, 3000, 3500, 4000, 4500, or 5000 nm. Therefore, the optoelectronic component module 100 of this disclosure can respond to SWIR light and is not affected by visible light interference during detection. This disclosure provides a method for operating an optoelectronic component module 100, which includes receiving light L1 through the optoelectronic component module 100, wherein the upper surface of the circuit module 120 is the light-receiving surface. In other words, the upper surface of the semiconductor substrate 122 is the light-receiving surface. The optoelectronic component module 100 can be applied in the field of SWIR sensors. The light L1 illuminates the optoelectronic component module 100 from above. In some embodiments, the optoelectronic component module 100 does not have a filter, filter film, filter structure, or combination thereof disposed between the first electrode 112 and the encapsulation layer 130.

[0074] In a process of manufacturing a general filter, a coating process or a deposition process is usually used to fabricate the filter, the filter film or the filter structure. However, the filter, the filter film or the filter structure usually requires high temperature conditions and a long process time to form, which can damage components or materials in the optoelectronic component module. The optoelectronic component module 100 of the present disclosure directly uses the semiconductor substrate 122 as the filter without performing an additional process to form the filter, the filter film and / or the filter structure, thereby avoiding the above-mentioned high temperature damage problem. Therefore, the optoelectronic component module 100 of the present disclosure can have good performance and a light, thin and simple structure, and can also reduce manufacturing costs. In addition, compared with a general filter, the semiconductor substrate 122 can have better water resistance and gas resistance, and can be used as part of the packaging structure of the optoelectronic component module 100. In some embodiments, the material of the semiconductor substrate 122 includes silicon. In some embodiments, the semiconductor substrate 122 is a silicon substrate or a silicon-containing composite substrate. Compared with germanium or indium gallium arsenide, silicon has a lower cost, which is conducive to reducing manufacturing costs.

[0075] Please continue to refer to Figure 1A In some embodiments, the optoelectronic component module 100 further includes a packaging layer 130, wherein the packaging layer 130 covers the side surface and the bottom surface of the optoelectronic component module 100. The packaging layer 130 can also be referred to as a passivation layer. In more detail, the packaging layer 130 covers the side surface of the first electrode 112, the first carrier transport layer 114, the photoactive layer 116 and the second carrier transport layer 118, and the bottom surface of the first electrode 112. The packaging layer 130 can be light-transmitting or non-light-transmitting. In some embodiments, the packaging layer 130 is light-transmitting, for example, the material of the packaging layer 130 includes silicon nitride, silicon dioxide, aluminum oxide, zirconium dioxide, parylene, epoxy, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyimide, glass or a combination thereof. Please refer again to Figure 1B The optoelectronic component module 100' further includes a non-light-transmitting packaging layer 130', which includes an insulating layer 132 and a metal layer 134. In more detail, the packaging layer 130' is opaque and does not allow visible light to pass through. The insulating layer 132 covers the side surface and the bottom surface of the photoelectric conversion module 110, and the metal layer 134 covers the side surface and the bottom surface of the insulating layer 132. The insulating layer 132 can include silicon nitride, silicon dioxide, aluminum oxide, zirconium dioxide, parylene, epoxy, polyethylene terephthalate, polymethyl methacrylate, polycarbonate, polyimide, glass or a combination thereof. The metal layer 134 can include silver, gold, aluminum, copper, molybdenum, titanium, tungsten or a combination thereof, and can be a metal foil or a metal thin film formed by evaporation.

[0076] Please continue to refer to Figure 1AThe upper surface of the optoelectronic assembly module 100 is a light receiving surface, and the first electrode 112 disposed below is opaque to light. For example, the first electrode 112 is non-transparent and does not allow visible light to pass through. For example, the first electrode 112 is a metal-containing layer having a thickness greater than 10 nm or a conductive carbon layer having a thickness greater than 50 nm. In some embodiments, the material of the first electrode 112 includes silver, gold, aluminum, copper, molybdenum, titanium, tungsten, titanium nitride, carbon material, or a combination thereof. The second electrode 124 is transparent to light, for example, the second electrode 124 allows visible light, near-infrared light, and / or short-wave infrared (SWIR) light to pass through. For example, the second electrode 124 allows light having a wavelength between 1000 nm and 5500 nm to pass through. For example, the second electrode 124 is a transparent electrode. In some embodiments, the second electrode 124 includes a transparent conductive oxide (TCO), a transparent conductive polymer, a nanosilver wire, a metal-containing layer having a thickness less than or equal to 15 nm, or a combination thereof. The TCO includes indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), aluminum zinc oxide (AZO), or a combination thereof. The transparent conductive polymer includes poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), polyaniline, polyfluorene, polypyrrole, polythiophene, polycarbazole, or a combination thereof. The metal-containing layer can include a metal layer having a thickness less than or equal to 15 nm, an alloy layer having a thickness less than or equal to 15 nm, or a combination thereof. The metal-containing layer can include silver, gold, aluminum, copper, titanium, molybdenum, titanium nitride, titanium tungsten, or a combination thereof.

[0077] The photoactive layer 116 contains a material that can be responsive to SWIR light. More specifically, the photoactive layer 116 can detect light LI having a wavelength between 1000 nm and 5500 nm. The photoactive layer 116 can be referred to as a photoelectric conversion layer. In some embodiments, the photoactive layer 116 has a thickness of 140 nm to 500 nm, such as 140, 150, 200, 250, 300, 350, 400, 450, or 500 nm. In some embodiments, the photoactive layer 116 includes an organic semiconductor, an inorganic semiconductor, a quantum dot, a perovskite, or a combination thereof. In some embodiments, the quantum dot includes CdSe, CdZnS, CdSeS, CdS, ZnSe, InP, InS, CdTe, CuInS2, CuInZnS, ZnS, PbS, PbSe, AgInS2, Ag2Te, InAs, Cd3As2, AgBiS2, InAs / InP, InGaP, or a combination thereof. In some embodiments, the perovskite has a general formula of ABX3, where A is an organic cation, B is a metal cation, and X is a halide anion. In some embodiments, the perovskite includes CH3NH3PbI3, CH3NH3PbBr3, (MeNH3)PbBr3, Cs2Sn3I6, Ag3BiI6, (CH3NH3)3Bi2Cl9, Cs2SnI5Br, Cs2TiBr6, or a combination thereof. In some embodiments, the organic semiconductor includes one or more P-type organic semiconductors and one or more N-type organic semiconductors. The P-type organic semiconductor can be a conjugated polymer and the N-type organic semiconductor can be a non-fullerene material or a fullerene material. For example, the P-type organic semiconductor includes:

[0078]

[0079]

[0080]

[0081]

[0082]

[0083]

[0084] or a combination thereof. In the above P-type organic semiconductors, each of n1to n41is independently a positive integer from 1 to 1000. Each of a5to a20, a22, a23, a25, a28to a34, b5to b20, b22, b23, b25, b28to b34, c35to c37, d35to d37, and e35to d37represents a mole fraction, and each is greater than 0 and less than 1. In each P-type organic semiconductor, the sum of all mole fractions is 1. For example, N-type organic semiconductors include: (R is ethylhexyl),

[0085]

[0086]

[0087] (R is ethylhexyl),

[0088] (R is ethylhexyl),

[0089]

[0090]

[0091] (R is hexyldecyl), (R is hexyldecyl), (R is decyltetradecyl),

[0092]

[0093] (R is ),

[0094]

[0095]

[0096]

[0097] (R is ),

[0098]

[0099]

[0100] or a combination thereof.

[0101] Please continue to refer to Figure 1AThe first carrier transport layer 114 and the second carrier transport layer 118 are different materials. In some embodiments, one of the first carrier transport layer 114 and the second carrier transport layer 118 is an electron transport layer and the other is a hole transport layer. For example, the first carrier transport layer 114 is an electron transport layer and the second carrier transport layer 118 is a hole transport layer. For example, the first carrier transport layer 114 is a hole transport layer and the second carrier transport layer 118 is an electron transport layer. In some embodiments, the first carrier transport layer 114 and the second carrier transport layer 118 each comprise a metal oxide or an organic material (e.g., an organic small molecule, a polymer, or a cross-linkable molecule). In some embodiments, the electron transport layer comprises zinc aluminum oxide, zinc oxide, titanium oxide (e.g., titanium dioxide), tin oxide (e.g., tin dioxide), a polyelectrolyte, 4,7-diphenyl-l,10-phenanthroline (BPhen), or a combination thereof. In some embodiments, the hole transport layer comprises molybdenum trioxide (Mo03), nickel monoxide (NiO), tungsten trioxide (W03), PEDOT:PSS, bathocuproine (BCP), Buckminsterfullerene (C60), polyethylenimine (PEI), ethoxylated polyethylenimine (PEIE), or a combination thereof. The PEI can have the following structure The PEIE can have the following structure where x, y, and z are mole fractions, and the sum of x, y, and z is 1. In other embodiments, the first carrier transport layer 114 disposed between the first electrode 112 and the photoactive layer 116 is omitted, such that the photoactive layer 116 is disposed on and directly contacts the first electrode 112. In other embodiments, the second carrier transport layer 118 disposed between the photoactive layer 116 and the circuit module 120 is omitted, such that the circuit module 120 is disposed on and directly contacts the photoactive layer 116, and the second electrode 124 is disposed between the photoactive layer 116 and the semiconductor substrate 122.

[0102] Figure 2 ​is a top view schematic of the conductive lines 126 and the second electrode 124 according to various embodiments of the present disclosure. A portion of the conductive lines 126 (the portion to the left of the dashed line) that overlaps the second electrode 124 in a top view has a first area Al, and the second electrode 124 has a second area A2 in a top view, the first area Al being smaller than the second area A2. In some embodiments, the second electrode 124 has a higher transmittance for light than the conductive lines 126.

[0103] Please refer to Figure 3 and Figure 4 . Figure 3 is a flowchart of a method of manufacturing the photovoltaic module 100 according to various embodiments of the present disclosure. The method 300 includes operation 310, operation 320, and operation 330. Figure 4 shows cross-sectional schematic views of intermediate stages of manufacturing the photovoltaic module 100 according to various embodiments of the present disclosure.

[0104] In operation 310, the circuit module 120 is received, as shown in Figure 4 For simplicity of the drawings, Figure 4 the conductive lines 126 within the circuit module 120 are not shown. In operation 320, the photovoltaic conversion module 110 is formed on the circuit module 120, as shown in Figure 4 More specifically, the second carrier transport layer 118 is formed on the circuit module 120, and the photoactive layer 116 is formed on the second carrier transport layer 118. The first carrier transport layer 114 is formed on the photoactive layer 116. The first electrode 112 is formed on the first carrier transport layer 114, thereby forming the photovoltaic conversion module 110. In operation 330, the encapsulation layer 130 is formed around the photovoltaic conversion module 110, as shown in FIG. 4. More specifically, the encapsulation layer 130 covers the side surfaces and the surface of the photovoltaic conversion module 110 away from the circuit module 120. Figure 4 The photovoltaic module 100 of FIG. 1 is obtained by inverting the photovoltaic module 100 of Figure 4 The aforementioned Figure 1B photovoltaic module 100' can be manufactured according to the flow shown in

[0105] Figure 5is a cross-sectional schematic view of a photoelectric component module 500 according to various embodiments of the present disclosure. The present disclosure provides a photoelectric component module 500 that includes a circuit module 510 and a photoelectric conversion module 520 that are joined to each other. The circuit module 510 includes a first semiconductor substrate 512, a first electrode 514, and a readout circuit 516. The readout circuit 516 can include a thin film transistor (TFT). Embodiments of the circuit module 510 can refer to embodiments of the circuit module 120, and will not be repeated. However, the circuit module 510 can further include the conductive line 126 as shown in FIG. 1A. For simplicity of the drawings, Figure 5 The conductive line within the circuit module 510 is not shown. The photoelectric conversion module 520 includes a first carrier transport layer 521, a photoactive layer 522, a second carrier transport layer 523, a second electrode 524, and a second semiconductor substrate 525. The first carrier transport layer 521 is disposed on the circuit module 510, and the photoactive layer 522 is disposed on the first carrier transport layer 521. The second carrier transport layer 523 is disposed on the photoactive layer 522. The second electrode 524 is disposed on the second carrier transport layer 523 and is light-transmissive. The second semiconductor substrate 525 is disposed on the second electrode 524. In some embodiments, the second electrode 524 is referred to as a common electrode.

[0106] Please continue to refer to Figure 5 In some embodiments, the first semiconductor substrate 512 is a silicon substrate, a glass substrate, a polymer substrate, or a ceramic substrate. In some embodiments, the material of the polymer substrate includes polyimide, polyethylene terephthalate, polynaphthalene dimethyl acid glycol ester, polycarbonate, or a combination thereof.

[0107] Please continue to refer to Figure 5The second semiconductor substrate 525 does not allow visible light to pass through, but allows short wave infrared (SWIR) light to pass through. The second semiconductor substrate 525 can act as a filter to filter out light with a wavelength less than 1000 nm to avoid interference with signal detection. In more detail, the second semiconductor substrate 525 has a transmittance less than 1% for light with a wavelength less than 1000 nm, and a transmittance higher than 10% for light with a wavelength from 1050 nm to 5500 nm, such as 1050 nm, 1500 nm, 2000 nm, 2500 nm, 3000 nm, 3500 nm, 4000 nm, 4500 nm, or 5000 nm. Thus, the optoelectronic component module 500 of the disclosure can be responsive to SWIR light and is not interfered by visible light when detecting. The disclosure provides a method of operating the optoelectronic component module 500, which includes receiving light L2 by the optoelectronic component module 500, where the upper surface of the optoelectronic component module 500 is a light receiving surface. In other embodiments, the first semiconductor substrate 512 has a transmittance less than 1% for light with a wavelength less than 1000 nm, and a transmittance higher than 10% for light with a wavelength from 1050 nm to 5500 nm. Thus, the lower surface of the optoelectronic component module 500 can receive light from below as a light receiving surface. In other embodiments, both the upper surface and the lower surface of the optoelectronic component module 500 are light receiving surfaces. The optoelectronic component module 500 can be applied in the field of SWIR sensors. In some embodiments, the optoelectronic component module 500 does not have a filter, a filter film, a filter structure, or a combination thereof disposed above the second semiconductor substrate 525.

[0108] In the process of manufacturing a general filter, a coating process or a deposition process is usually used to fabricate the filter, the filter film, or the filter structure. However, the filter, the filter film, or the filter structure usually requires high-temperature conditions and a long process time to form, which can damage components or materials in the optoelectronic component module. The second semiconductor substrate 525 of the disclosure is connected to the film layer below by a bonding operation, which can avoid the problem of high-temperature damage. Thus, the optoelectronic component module 500 of the disclosure can have good performance and can reduce manufacturing costs. In addition, compared with a general filter, the second semiconductor substrate 525 can have better water resistance and gas resistance, and thus can be part of the packaging structure of the optoelectronic component module 500. In some embodiments, the material of the second semiconductor substrate 525 includes silicon. In some embodiments, the second semiconductor substrate 525 is a silicon substrate or a silicon-containing composite substrate. Compared with germanium or indium gallium arsenide, silicon has a lower cost, which is beneficial to reducing manufacturing costs.

[0109] The first electrode 514 may be transparent or opaque. For example, the first electrode 514 may be opaque, preventing visible light from passing through, or it may be transparent, allowing visible light to pass through. In some embodiments, the first electrode 514 is opaque, and the material of the first electrode 514 includes silver, gold, aluminum, copper, molybdenum, titanium, tungsten, titanium nitride, carbon materials, or combinations thereof. In some embodiments, the first electrode 514 is transparent, and it includes transparent conductive oxide (TCO), transparent conductive polymer, nano-silver wires, a metal-containing layer with a thickness of less than or equal to 15 nm, or combinations thereof. TCO includes indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), aluminum zinc oxide (AZO), or combinations thereof. Transparent conductive polymers include poly(3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS), polyaniline, polyfluorene, polypyrrole, polythiophene, polycarbazole, or combinations thereof. The metal layer may include a metal layer with a thickness of 15 nm or less, an alloy layer with a thickness of 15 nm or less, or combinations thereof. The metal layer may include silver, gold, aluminum, copper, titanium, molybdenum, titanium nitride, titanium tungstenide, or combinations thereof.

[0110] The second electrode 524 is light-transmitting. For example, the second electrode 524 is transparent, allowing visible light to pass through. In some embodiments, the second electrode 524 comprises a transparent conductive oxide (TCO), a transparent conductive polymer, silver nanowires, a metal-containing layer with a thickness of less than or equal to 15 nm, or a combination thereof. The TCO includes indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), zinc aluminum oxide (AZO), or a combination thereof. The transparent conductive polymer includes poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS), polyaniline, polyfluorene, polypyrrole, polythiophene, polycarbazole, or a combination thereof. The metal-containing layer may include a metal layer with a thickness of less than or equal to 15 nm, an alloy layer with a thickness of less than or equal to 15 nm, or a combination thereof. The metal-containing layer may include silver, gold, aluminum, copper, titanium, molybdenum, titanium nitride, titanium tungstenide, or a combination thereof.

[0111] Please continue to refer to Figure 5The embodiments of the first carrier transport layer 521, the photoactive layer 522, and the second carrier transport layer 523 can refer to the embodiments of the first carrier transport layer 114, the photoactive layer 116, and the second carrier transport layer 118, and will not be repeated here. In other embodiments, the first carrier transport layer 521 disposed between the circuit module 510 and the photoactive layer 522 is omitted, so that the photoactive layer 522 is disposed on the circuit module 510 and directly contacts the circuit module 510, wherein the first electrode 514 is disposed between the first semiconductor substrate 512 and the photoactive layer 522. In other embodiments, the second carrier transport layer 523 disposed between the photoactive layer 522 and the second electrode 524 is omitted, so that the second electrode 524 is disposed on the photoactive layer 522, the second electrode 524 directly contacts the photoactive layer 522, and the second electrode 524 is disposed between the photoactive layer 522 and the second semiconductor substrate 525.

[0112] Figures 6 to 11 Cross-sectional schematic diagrams are shown for intermediate stages of manufacturing optoelectronic component modules according to various embodiments of this disclosure.

[0113] like Figure 6 As shown, a first portion of the photoelectric conversion module 520 is formed. More specifically, a light-transmitting second electrode 524 is formed on a second semiconductor substrate 525, thereby forming the first portion of the photoelectric conversion module 520. In some embodiments, when the second electrode 524 comprises a transparent conductive oxide, the second electrode 524 is deposited on the second semiconductor substrate 525 by sputtering or electron beam evaporation. In some embodiments, when the second electrode 524 comprises a transparent conductive polymer, nano-silver wires, a metal-containing layer, or a combination thereof, the second electrode 524 is formed on the second semiconductor substrate 525 by coating or printing. Figure 6As shown, a circuit module 510 is formed with the second portion of the photoelectric conversion module 520 attached thereto. More specifically, a first carrier transport layer 521, a photoactive layer 522, and a second carrier transport layer 523 are sequentially formed on the circuit module 510, thereby forming the circuit module 510 with the second portion of the photoelectric conversion module 520 attached thereto. Next, the first portion of the photoelectric conversion module 520 and the circuit module 510 with the second portion of the photoelectric conversion module 520 attached thereto are bonded together to form a photoelectric component module 500. In some embodiments, the bonding operation is a physical bonding operation, wherein the second carrier transport layer 523 forms a Schottky contact with the second electrode 524. For example, the bonding operation is performed by bonding or adhesive bonding. It is worth noting that if the light L2 contains light with a wavelength less than 1000 nm, the second semiconductor substrate 525 can act as a filter to filter this light. Furthermore, compared to conventional filters, the second semiconductor substrate 525 offers better water and gas barrier properties, thus it can be used as part of the packaging structure of the optoelectronic component module 500. The following... Figures 7 to 12 The optoelectronic component module also has similar functions to the optoelectronic component module 500 in Figure 6, and will not be described in detail here.

[0114] like Figure 7 As shown, this forms the first part of the photoelectric conversion module 520. More specifically, a second electrode 524 and a second carrier transport layer 523 are sequentially formed on a second semiconductor substrate 525, thereby forming the first part of the photoelectric conversion module 520. Figure 7 As shown, a circuit module 510 is formed with the second portion of the photoelectric conversion module 520 attached thereto. More specifically, a first carrier transport layer 521 and a photoactive layer 522 are sequentially formed on the circuit module 510, thereby forming the circuit module 510 with the second portion of the photoelectric conversion module 520 attached thereto. Next, the first portion of the photoelectric conversion module 520 and the circuit module 510 with the second portion of the photoelectric conversion module 520 attached thereto are bonded together to form a photoelectric component module 500. In some embodiments, the bonding operation is a physical bonding operation, wherein the second carrier transport layer 523 and the photoactive layer 522 form a semiconductor bonding surface. For example, the bonding operation is performed by bonding or adhesive bonding.

[0115] like Figure 8 As shown, this forms the first part of the photoelectric conversion module 520'. More specifically, a second electrode 524, a second carrier transport layer 523, and a first photoactive layer 522A are sequentially formed on a second semiconductor substrate 525, thereby forming the first part of the photoelectric conversion module 520'. Figure 8As shown, a circuit module 510 with the second portion of the photoelectric conversion module 520' attached is formed. More specifically, a first carrier transport layer 521 and a second photoactive layer 522B are sequentially formed on the circuit module 510, thereby forming a circuit module 510 with the second portion of the photoelectric conversion module 520' attached. Next, the first portion of the photoelectric conversion module 520' and the circuit module 510 with the second portion of the photoelectric conversion module 520' are joined together to form a photoelectric component module 500'. The difference between the photoelectric component module 500' and the photoelectric component module 500 is that the photoactive layer 522' of the photoelectric component module 500' includes a first photoactive layer 522A and a second photoactive layer 522B that are superimposed on each other, and the first photoactive layer 522A and the second photoactive layer 522B are in direct contact with each other to form a bonding interface. The implementation of the first photoactive layer 522A and the second photoactive layer 522B can be referred to the implementation of the photoactive layer 116, and will not be described again. In some embodiments, the bonding operation is a physical bonding operation, wherein the first photoactive layer 522A and the second photoactive layer 522B form a semiconductor bonding surface. For example, the bonding operation is performed by bonding or adhesive bonding.

[0116] like Figure 9 As shown, this forms the first part of the photoelectric conversion module 520. More specifically, a second electrode 524, a second carrier transport layer 523, and a photoactive layer 522 are sequentially formed on a second semiconductor substrate 525, thereby forming the first part of the photoelectric conversion module 520. Figure 9 As shown, a circuit module 510 is formed to which the second portion of the photoelectric conversion module 520 is attached. More specifically, a first carrier transport layer 521 is formed on the circuit module 510, thereby forming the circuit module 510 to which the second portion of the photoelectric conversion module 520 is attached. Next, the first portion of the photoelectric conversion module 520 and the circuit module 510 to which the second portion of the photoelectric conversion module 520 is attached are bonded together to form a photoelectric component module 500. In some embodiments, the bonding operation is a physical bonding operation, wherein the photoactive layer 522 and the first carrier transport layer 521 form a semiconductor bonding surface. For example, the bonding operation is performed by bonding or adhesive bonding.

[0117] like Figure 10 As shown, a photoelectric conversion module 520 is formed. More specifically, a second electrode 524, a second carrier transport layer 523, a photoactive layer 522, and a first carrier transport layer 521 are sequentially formed on a second semiconductor substrate 525 to form the photoelectric conversion module 520. Next, the photoelectric conversion module 520 and the circuit module 510 are bonded together to form a photoelectric component module 500. In some embodiments, the bonding operation is a physical bonding operation, wherein the first carrier transport layer 521 and the first electrode 514 form a Schottky contact. For example, the bonding operation is performed by bonding or adhesive bonding.

[0118] like Figure 11 As shown, a first portion of the photoelectric conversion module 520” is formed. More specifically, a second electrode 524 is formed on a second semiconductor substrate 525, thereby forming the first portion of the photoelectric conversion module 520”. Figure 11 As shown, a circuit module 510 is formed with the second portion of the photoelectric conversion module 520 attached thereto. More specifically, a first carrier transport layer 521, a photoactive layer 522, a second carrier transport layer 523, and a third electrode 524' are sequentially formed on the circuit module 510, thereby forming the second portion of the circuit module 510 with the photoelectric conversion module 520 attached thereto. The material and thickness of the third electrode 524' can refer to the material and thickness of the second electrode 524 described above. Next, the first portion of the photoelectric conversion module 520” and the circuit module 510 to which the second portion of the photoelectric conversion module 520” are attached are joined to form a photoelectric component module 500”, wherein the second electrode 524 and the third electrode 524' form an ohmic contact. In some embodiments, the joining operation is a chemical joining operation or a physical joining operation. In some embodiments, the joining operation is performed by bonding, adhesive bonding or welding. For example, welding is solid welding (e.g., cold welding). The difference between the photoelectric component module 500” and the photoelectric component module 500 is that the photoelectric component module 500” further includes a third electrode 524', wherein the third electrode 524' is disposed between the second carrier transport layer 523 and the second electrode 524. In some embodiments, the second carrier transport layer 523 is omitted, and the third electrode 524' is disposed between the photoactive layer 522 and the second electrode 524.

[0119] The features of this disclosure will be described in more detail below with reference to Experimental Examples 1 and 2. Although the following embodiments are described, the materials used, their quantities and ratios, processing details, and processing procedures may be appropriately changed without departing from the scope of this disclosure. Therefore, this disclosure should not be interpreted restrictively based on the embodiments described below.

[0120] Experimental Example 1: Measuring the properties of the optoelectronic component modules of Comparative Example 1 and Example 1

[0121] Figure 12 This is a cross-sectional view of the optoelectronic component module 1200 of Comparative Example 1. For example... Figure 12 As shown, the optoelectronic component module 1200 includes a glass substrate 1210, an ITO layer 1220 with a thickness of 150 nm, a zinc oxide layer 1230 with a thickness of 40 nm, a photoactive layer 1240 with a thickness of 150 nm, a molybdenum trioxide layer 1250 with a thickness of 10 nm, and a silver electrode 1260 with a thickness of 100 nm. The photoactive layer 1240 includes P-type organic semiconductors and N-type organic semiconductors. Figure 13The absorption spectra of this p-type organic semiconductor (1300p) and the absorption spectra of this n-type organic semiconductor (1300n) are shown. The energy of the highest occupied molecular orbital (HOMO) of the p-type organic semiconductor is -4.91 eV, and the energy of the lowest unoccupied molecular orbital (LUMO) is -4.16 eV. The energy of the HOMO of the n-type organic semiconductor is -5.73 eV, and the energy of the LUMO is -4.42 eV. Measurements were taken with light L3 applied from below. Please refer to the reference for the measurement results. Figure 14 . Figure 14 This is the external quantum efficiency-wavelength relationship diagram for the optoelectronic component module 1200 of Comparative Example 1. Figure 14 As shown, the optoelectronic module 1200 exhibits high external quantum efficiency in the wavelength range less than 1000 nm, indicating that the glass substrate 1210 cannot filter light with wavelengths less than 1000 nm. In the wavelength range greater than 1000 nm, the external quantum efficiency is lower, meaning that the glass substrate 1210 affects the transmittance of light with wavelengths greater than 1000 nm.

[0122] Figure 15 This is a cross-sectional schematic diagram of the optoelectronic component module 1500 of Embodiment 1. The optoelectronic component module 1500 includes a silicon substrate 1510, a light-transmitting insulating layer 1520 (trade name: ENPI 200, which contains epoxy resin), an IZO layer 1220' with a thickness of 150 nm, a zinc oxide layer 1230' with a thickness of 100 nm, a photoactive layer 1240 with a thickness of 150 nm, a molybdenum trioxide layer 1250 with a thickness of 10 nm, and a silver electrode 1260 with a thickness of 100 nm. Measurements were performed by applying light L3 from below; please refer to the measurement results. Figure 16 . Figure 16 This is the external quantum efficiency-wavelength relationship diagram of the optoelectronic component module 1500 in Example 1. Figure 16 As shown, the optoelectronic module 1500 exhibits high external quantum efficiency in the wavelength range above 1000 nm. However, in the wavelength range below 1000 nm, the optoelectronic module 1500 has almost no external quantum efficiency, thus demonstrating that the silicon substrate 1510 can indeed filter light with wavelengths below 1000 nm. Therefore, the optoelectronic module 1500 of Embodiment 1 can be applied in the field of SWIR sensors.

[0123] Experimental Example 2: Measuring the properties of the optoelectronic component modules in Comparative Example 2 and Example 2

[0124] Figure 17 This is a cross-sectional view of the optoelectronic component module 1700 in Comparative Example 2. For example... Figure 17As shown, the optoelectronic component module 1700 includes a glass substrate 1710, an ITO layer 1720 with a thickness of 150 nm, a zinc oxide layer 1730 with a thickness of 40 nm, a photoactive layer 1740 with a thickness of 120 nm, a molybdenum trioxide layer 1750 with a thickness of 10 nm, and a silver electrode 1760 with a thickness of 100 nm. The photoactive layer 1740 includes a P-type organic semiconductor and an N-type organic semiconductor. The P-type organic semiconductor is... N-type organic semiconductors are Measurements were taken by applying light L4 from below. Please refer to the measurement results. Figure 18 . Figure 18 This is the external quantum efficiency-wavelength relationship diagram for the optoelectronic component module 1700 in Comparative Example 2. Figure 18 As shown, the optoelectronic module 1700 exhibits high external quantum efficiency in the wavelength range below 1000 nm, indicating that the glass substrate 1710 cannot filter light with wavelengths below 1000 nm. In the wavelength range above 1000 nm, the external quantum efficiency is lower, meaning that the glass substrate 1710 affects the transmittance of light L4 with wavelengths above 1000 nm.

[0125] Figure 19 This is a cross-sectional schematic diagram of the optoelectronic component module 1900 of Embodiment 2. The optoelectronic component module 1900 includes a silicon substrate 1910, a light-transmitting insulating layer 1920 (trade name: ENPI 200, which contains epoxy resin), an IZO layer 1720' with a thickness of 150 nm, a zinc oxide layer 1730' with a thickness of 100 nm, a photoactive layer 1740 with a thickness of 120 nm, a molybdenum trioxide layer 1750 with a thickness of 10 nm, and a silver electrode 1760 with a thickness of 100 nm. Measurements were performed by applying light L4 from below; please refer to the measurement results. Figure 20 . Figure 20 This is the external quantum efficiency-wavelength relationship diagram of the optoelectronic component module 1900 in Example 2. Figure 20 As shown, the optoelectronic module 1900 exhibits high external quantum efficiency in the wavelength range above 1000 nm. However, in the wavelength range below 1000 nm, the optoelectronic module 1900 has almost no external quantum efficiency, thus demonstrating that the silicon substrate 1910 can indeed filter light with wavelengths below 1000 nm. Therefore, the optoelectronic module 1900 of Embodiment 2 can be applied in the field of SWIR sensors.

[0126] In summary, this disclosure provides an optoelectronic component module and its operating method. The optoelectronic component module includes a semiconductor substrate with a filtering function. This semiconductor substrate does not allow visible light to pass through but allows short-wave infrared (SWIR) light to pass through, thus enabling the optoelectronic component module to be applied in the field of SWIR sensors and avoiding interference signal detection. In the optoelectronic component module, the semiconductor substrate is connected to another optoelectronic conversion module through a bonding operation, and no other filters are required in the optoelectronic component module, thus avoiding the influence of filter manufacturing processes (e.g., deposition processes) on the properties of the optoelectronic component module. The optoelectronic component module of this disclosure has excellent optoelectronic properties, a thin and simplified structure, and reduced manufacturing costs.

[0127] Although this disclosure has been described in considerable detail with reference to certain embodiments, other embodiments may also be possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

[0128] It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of this disclosure without departing from its scope or spirit. In view of the foregoing, this disclosure is intended to cover any modifications and variations falling within the appended claims.

Claims

1. A photovoltaic assembly module, comprising: The first electrode is opaque. The optically active layer is disposed on the first electrode. The circuit module is disposed on the optically active layer, wherein the circuit module comprises a semiconductor substrate and a second electrode disposed between the optically active layer and the semiconductor substrate, the semiconductor substrate has a transmittance of less than 1% for light having a wavelength of less than 1000 nm and a transmittance of more than 10% for light having a wavelength of 1050 nm to 5500 nm. The material of the semiconductor substrate comprises silicon. The material of the first electrode comprises silver, gold, aluminum, copper, molybdenum, titanium, tungsten, titanium nitride, carbon material, or a combination thereof.

2. The photovoltaic assembly module of claim 1, wherein, The encapsulation layer is opaque and covers the side and bottom surfaces of the first electrode and the side surface of the optically active layer.

3. The photovoltaic assembly module of claim 1, wherein, The second electrode is transparent.

4. The photovoltaic assembly module of claim 1, wherein, The circuit module further comprises a conductive circuit embedded in the semiconductor substrate and electrically connected to the second electrode, a portion of the conductive circuit overlapping the second electrode in a top view has a first area, and the second electrode has a second area in a top view, the first area being smaller than the second area.

5. The photovoltaic assembly module of claim 1, wherein, The first carrier transport layer is disposed between the first electrode and the optically active layer.

6. The photovoltaic assembly module of claim 1, wherein, The second carrier transport layer is disposed between the optically active layer and the circuit module.

7. The photovoltaic assembly module of claim 1, wherein, The circuit module further comprises a transparent insulating layer disposed between the optically active layer and the semiconductor substrate, and the second electrode is embedded in the transparent insulating layer. The optoelectronic component module of any one of claims 1 to 8 receives light, wherein the upper surface of the circuit module is a light receiving surface. The optoelectronic component module of any one of claims 1 to 8 receives light, wherein the upper surface of the circuit module is a light receiving surface.

8. The photovoltaic assembly module of claim 1, wherein, The circuit module comprises a first semiconductor substrate and a first electrode.

9. A method of operating a photovoltaic assembly module, the method comprising: The optically active layer is disposed on the circuit module, wherein the first electrode is disposed between the first semiconductor substrate and the optically active layer. The second electrode is disposed on the optically active layer, and the second electrode is transparent.

10. A photovoltaic assembly module, comprising: The second semiconductor substrate has a transmittance of less than 1% for light having a wavelength of less than 1000 nm and a transmittance of more than 10% for light having a wavelength of 1050 nm to 5500 nm. The optically active layer comprises a first optically active layer and a second optically active layer that overlap each other and directly contact each other to form a junction interface. The third electrode is disposed between the optically active layer and the second electrode. The first carrier transport layer is disposed between the circuit module and the optically active layer. The second carrier transport layer is disposed between the optically active layer and the second electrode. The material of the second semiconductor substrate comprises silicon.

11. The photovoltaic assembly module of claim 10, wherein, The second electrode comprises a transparent conductive oxide, a transparent conductive polymer, a nano silver wire, a metal-containing layer having a thickness of less than or equal to 15 nm, or a combination thereof.

12. The photovoltaic assembly module of claim 10, wherein, The optoelectronic component module of any one of claims 12 to 15 receives light, wherein the optoelectronic component module has a light receiving surface, and the light receiving surface is an upper surface, a lower surface, or a combination thereof of the optoelectronic component module.

13. The photovoltaic assembly module of claim 10, wherein, ​ ​ ​ 14. The photovoltaic assembly module of claim 10, wherein, ​ 15. The photovoltaic assembly module of claim 10, wherein, ​ 16. A method of operating a photovoltaic assembly module, comprising: ​ ​

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