IPA atomization and concentration control system

Abstract

The embodiment of the invention discloses an IPA atomization and concentration control system, which comprises an IPA supply mechanism, an inert gas supply mechanism, a high-pressure atomization mechanism and a wafer cleaning tank, and is characterized in that the IPA supply mechanism conveys IPA to the high-pressure atomization mechanism; the inert gas supply mechanism conveys inert gas to the high-pressure atomization mechanism; the high-pressure atomization mechanism comprises a Venturi type high-pressure atomizer, shearing and cavitation atomization of IPA are achieved through a low-pressure area generated by high-speed fluid in the throat, inert gas and IPA liquid are evenly mixed, and atomized gas with stable IPA concentration is output. The wafer cleaning tank carries a wafer to be dried. According to the embodiment of the invention, shearing and cavitation atomization of IPA are realized by utilizing a low-pressure area generated by high-speed fluid in the throat part based on the Venturi effect, uniform mixing of inert gas and IPA liquid is ensured by virtue of the stable fluid characteristic of the Venturi tube, IPA steam concentration fluctuation is avoided, and finally atomized gas with stable concentration is output.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer cleaning, and in particular to an IPA atomization and concentration control system. BACKGROUND

[0002] In a mechanical polishing process, a large amount of particulate matter is left on the surface of the polished wafer, which needs to be cleaned. During the drying stage after cleaning, if not handled properly, water stains and water marks are likely to occur on the surface of the wafer, affecting product yield. Currently, the industry generally uses the Marangoni effect drying method of isopropyl alcohol (IPA) to solve this problem.

[0003] However, the IPA vapor concentration of the IPA mixed gas output by the existing IPA gas supply device to the wafer is uncontrollable, resulting in unstable drying effect, and the fluctuation of the output IPA vapor concentration is easy to cause the IPA mixed gas to enter the explosion limit range, which exists significant safety risk. SUMMARY

[0004] The present application aims to at least solve one of the technical problems existing in the prior art. To this end, the present application provides an IPA atomization and concentration control system to solve the problem that the IPA vapor concentration generated by the IPA gas supply device during the current wafer cleaning is uncontrollable, resulting in unstable wafer drying effect and significant safety risk.

[0005] Specifically, the present application provides an IPA atomization and concentration control system, which comprises an IPA supply mechanism, an inert gas supply mechanism, a high-pressure atomization mechanism, and a wafer cleaning tank, wherein: The IPA supply mechanism is in communication with the inlet of the high-pressure atomization mechanism, and the IPA supply mechanism is configured to deliver IPA to the high-pressure atomization mechanism; The inert gas supply mechanism is in communication with the inlet of the high-pressure atomization mechanism, and the inert gas supply mechanism is configured to deliver inert gas to the high-pressure atomization mechanism; The high-pressure atomization mechanism comprises a Venturi high-pressure atomizer, which is configured to realize shearing and cavitation atomization of IPA by using the low-pressure area generated by high-speed fluid at the throat, uniformly mix inert gas and IPA liquid, and output atomized gas with stable IPA concentration; The wafer cleaning tank is in communication with the outlet of the high-pressure atomization mechanism, and the wafer cleaning tank carries the wafer to be dried.

[0006] In some embodiments of the above-mentioned IPA atomization and concentration control system, the IPA supply mechanism comprises an IPA liquid supply part, a liquid storage part, and a first flow control unit; The IPA supply unit is connected to the liquid storage unit, and the liquid storage unit is connected to the high-pressure atomizing mechanism. The first flow control unit is installed between the liquid storage unit and the high-pressure atomizing mechanism. The liquid storage unit is configured to: store the IPA liquid output from the IPA supply unit and supply the IPA liquid to the high-pressure atomizing mechanism; The first flow control unit is configured to control the flow rate of IPA liquid delivered from the liquid storage unit to the high-pressure atomizing mechanism.

[0007] In some embodiments of the above-described IPA atomization and concentration control system, the inert gas supply mechanism is also connected to the liquid storage section, and the inert gas supply mechanism is configured to: supply inert gas to the liquid storage section to pressurize the inside of the liquid storage section and pump out the IPA liquid in the liquid storage section.

[0008] In some embodiments of the above-mentioned IPA atomization and concentration control system, a first switch control valve is provided between the IPA supply unit and the storage unit, and a liquid level switch is provided in the storage unit, and the liquid level switch is signal-connected to the first switch control valve. The liquid level switch is configured to: when the IPA level in the reservoir is lower than a set value, send a signal to the first switch control valve to open the first switch control valve to replenish IPA liquid from the IPA supply section into the reservoir; when the IPA level in the reservoir is higher than the set value, send a signal to the first switch control valve to close the first switch control valve to stop the IPA supply section from supplying IPA liquid into the reservoir.

[0009] In some embodiments of the above-described IPA atomization and concentration control system, the system further includes a waste liquid and waste gas collection unit; The waste liquid and waste gas collection section is connected to the liquid storage section to collect the gas and excess IPA liquid discharged when the liquid storage section stores liquid.

[0010] In some embodiments of the above-described IPA atomization and concentration control system, a second switch control valve is provided between the liquid storage section and the waste liquid and waste gas collection section. The second switch control valve is configured as follows: The IPA supply section is opened to discharge gas and excess IPA liquid from the reservoir when supplying IPA liquid to the reservoir.

[0011] In some embodiments of the above-described IPA atomization and concentration control system, a one-way exhaust valve is provided between the second switch control valve and the waste liquid and waste gas collection section, and the one-way exhaust valve is configured as follows: The unidirectional transport of gas and IPA liquid between the liquid storage section and the waste liquid and gas collection section is restricted to prevent waste liquid and gas in the waste liquid and gas collection section from flowing back into the liquid storage section.

[0012] In some embodiments of the above-described IPA atomization and concentration control system, the inert gas supply mechanism includes an inert gas supply section, which is connected to the Venturi high-pressure atomizer, and the inert gas supply section supplies inert gas to the Venturi high-pressure atomizer.

[0013] In some embodiments of the above-described IPA atomization and concentration control system, the inert gas supply mechanism further includes a third switch control valve, which is disposed between the inert gas supply unit and the Venturi high-pressure atomizer. The third switch control valve is configured to control the on / off state of the inert gas supplied by the inert gas supply unit to the Venturi high-pressure atomizer.

[0014] In some embodiments of the above-described IPA atomization and concentration control system, the inert gas supply mechanism further includes a second flow control unit, which is configured to control the flow rate of the inert gas supplied by the inert gas supply unit to the high-pressure atomization mechanism.

[0015] The above-described embodiments of the present invention have at least one or more of the following beneficial effects: This application employs a Venturi high-pressure atomizer to mix the IPA supplied by the IPA supply mechanism with the inert gas supplied by the inert gas supply mechanism. Based on the Venturi effect, the low-pressure zone generated by the high-speed fluid at the throat is used to achieve shearing and cavitation atomization of the IPA. Relying on the stable fluid characteristics of the Venturi tube, the inert gas and IPA liquid are ensured to be mixed evenly, avoiding fluctuations in IPA vapor concentration, and finally outputting atomized gas with a stable concentration.

[0016] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0017] The disclosure of this invention will become more readily understood with reference to the accompanying drawings. It will be readily understood by those skilled in the art that these drawings are for illustrative purposes only and are not intended to limit the scope of protection of this invention. Furthermore, similar numbers in the drawings are used to denote similar components, wherein: Figure 1 This is a schematic diagram of the composition of the IPA atomization and concentration control system provided in one embodiment of this application; Figure 2 This is a schematic diagram of the composition of an IPA atomization and concentration control system provided in another embodiment of this application; Figure 3 This is a schematic diagram of the composition of an IPA atomization and concentration control system provided in another embodiment of this application; Figure 4 This is a perspective view of the Venturi high-pressure atomizer used in the embodiments of this application; Figure 5 This is a cross-sectional view of the Venturi high-pressure atomizer used in the embodiments of this application.

[0018] The components include: 1. IPA supply mechanism; 100. IPA liquid supply section; 110. Liquid storage section; 111. IPA liquid supply pipe; 112. First switching valve; 113. First check valve; 114. IPA flow control pipe; 115. Liquid supply pressure pipe; 116. Third switching valve; 117. Second check valve; 118. Liquid level switch; 120. First flow control unit; 121. Second switching valve; 122. Liquid flow controller; 2. Inert gas supply mechanism; 200. Inert gas supply section; 210. Gas supply pipe; 211. Third switching control valve. 212. Pressure regulating valve; 213. Gas flow control valve; 3. High-pressure atomizing mechanism; 300. Venturi high-pressure atomizer; 301. Mixing channel section; 302. High-pressure conversion section; 303. Pressure stabilizing section; 304. Outlet connection section; 305. Sealing ring; 4. Wafer cleaning tank; 410. Wafer cleaning gas supply pipe; 411. Fourth switch valve; 412. Fifth switch valve; 413. Gas flow control valve; 500. Waste liquid and waste gas collection section; 510. Exhaust pipe; 511. Second switch control valve; 512. One-way exhaust valve; 513. Pressure relief valve. Detailed Implementation

[0019] Some embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0020] As described in the background section, polished wafers require cleaning and drying. Improper drying can result in wafers that do not meet yield requirements. Currently, the industry commonly uses the Marangoni effect drying method with isopropyl alcohol (IPA) to dry wafers and improve the yield rate after drying. However, in existing IPA drying methods, the concentration of IPA vapor in the mixed gas composed of IPA vapor and inert gas is uncontrollable, leading to unstable drying effects on the wafers. Furthermore, fluctuations in the output IPA vapor concentration can easily cause the IPA mixed gas to enter the explosive limits, posing a significant safety risk.

[0021] To address the aforementioned issues, this invention creatively proposes an IPA atomization and concentration control system. Based on the Venturi effect, it achieves efficient atomization and relies on the stable fluid characteristics of the Venturi tube to ensure uniform mixing of inert gas and IPA liquid, avoiding fluctuations in IPA vapor concentration. Ultimately, it outputs atomized gas with stable concentration, solving the problems of low concentration control accuracy and uneven drying effect in traditional devices, and ensuring the consistency of the wafer drying process.

[0022] The present invention will be specifically described below through specific embodiments.

[0023] Specifically, refer to Figure 1 As shown in the figure, this application provides an IPA atomization and concentration control system, the system including: an IPA supply mechanism 1, an inert gas supply mechanism 2, a high-pressure atomization mechanism 3, and a wafer cleaning tank 4, wherein: The IPA supply mechanism 1 is connected to the inlet of the high-pressure atomizing mechanism 3, and the IPA supply mechanism 1 is configured to supply IPA to the high-pressure atomizing mechanism 3. The inert gas supply mechanism 2 is connected to the inlet of the high-pressure atomizing mechanism 3, and the inert gas supply mechanism 2 is configured to supply inert gas to the high-pressure atomizing mechanism 3. The high-pressure atomization mechanism 3 includes a Venturi high-pressure atomizer 300, which is configured to: utilize the low-pressure zone generated by the high-speed fluid in the throat to achieve shearing and cavitation atomization of IPA, uniformly mix inert gas and IPA liquid, and output atomized gas with stable IPA concentration. The wafer cleaning tank 4 is connected to the outlet of the high-pressure atomizing mechanism 3, and the wafer cleaning tank 4 carries the wafers to be dried.

[0024] The Venturi high-pressure atomizer 300 utilizes the Venturi effect to create negative pressure through high-pressure airflow to draw in liquid and break it up into atomized particles. This ensures uniform mixing of inert gas and IPA liquid, avoiding fluctuations in IPA concentration. Ultimately, it outputs atomized gas with a stable concentration, solving the problems of low concentration control accuracy and uneven drying effect in traditional devices, and ensuring the consistency of the wafer drying process.

[0025] In some embodiments, the IPA supply mechanism 1 includes: an IPA supply unit 100, a storage unit 110, and a first flow control unit 120; the IPA supply unit 100 is connected to the storage unit 110, the storage unit 110 is connected to the high-pressure atomizing mechanism 3, and the first flow control unit 120 is installed between the storage unit 110 and the high-pressure atomizing mechanism 3; the storage unit 110 is configured to: store the IPA liquid output by the IPA supply unit 100 and supply IPA liquid to the high-pressure atomizing mechanism 3; the first flow control unit 120 is configured to: control the flow rate of the IPA liquid supplied by the storage unit 110 to the high-pressure atomizing mechanism 3.

[0026] The IPA supply unit 100 refers to the IPA plant end. The IPA flow rate delivered by the IPA plant end is not stable enough. Therefore, a separate storage unit 110 is set between the IPA supply unit 100 and the Venturi high-pressure atomizer 300. The storage unit 110 stores the IPA liquid output from the IPA supply unit 100 and then stably outputs IPA liquid to the Venturi high-pressure atomizer 300. This avoids the unstable output from the IPA plant end, which affects the atomization effect. At the same time, the first flow control unit 120 controls the IPA flow rate delivered from the storage unit 110 to the Venturi high-pressure atomizer 300 so that the inert gas supply mechanism 2 can cooperate to deliver the inert gas and IPA liquid to the Venturi high-pressure atomizer 300 in a precise ratio.

[0027] For illustrative purposes only, the IPA supply unit 100 is connected to the storage unit 110 via the IPA supply pipe 111. Preferably, the IPA supply pipe 111 is equipped with a first switching valve 112 and a first check valve 113. The first switching valve 112 controls the opening and closing of the IPA supply pipe 111, that is, controls the opening and closing of the IPA liquid supplied from the IPA supply unit 100 to the storage unit 110. The first check valve 113 restricts the flow of the IPA liquid supplied in the IPA supply pipe 111 to flow only from the IPA supply unit 100 into the storage unit 110, so as to prevent the IPA liquid in the storage unit 110 from flowing back to the IPA supply unit 100.

[0028] The liquid reservoir 110 is connected to the Venturi high-pressure atomizer 300 through the IPA flow control tube 114. The first flow control unit 120 includes a second switching valve 121 and a liquid flow controller 122. The second switching valve 121 and the liquid flow controller 122 are respectively installed on the IPA flow control tube 114. The second switching valve 121 controls the on / off flow of IPA liquid supplied from the liquid reservoir 110 to the Venturi high-pressure atomizer 300. The liquid flow controller 122 precisely controls the IPA flow rate (the flow rate of IPA liquid supplied from the liquid reservoir 110 to the Venturi high-pressure atomizer 300) in the IPA flow control tube 114.

[0029] In some embodiments, the inert gas supply mechanism 2 is also connected to the liquid storage section 110, and the inert gas supply mechanism 2 is configured to: supply inert gas to the liquid storage section 110 to pressurize the inside of the liquid storage section 110 and pump out the IPA liquid in the liquid storage section 110.

[0030] For example, the inert gas supply mechanism 2 is connected to the liquid storage section 110 through a liquid supply pressure pipe 115. A third switch valve 116 and a second check valve 117 are respectively installed on the liquid supply pressure pipe 115. The third switch valve 116 controls the on / off of the inert gas supplied by the inert gas supply mechanism 2 to the liquid storage section 110, and the second check valve 117 controls the flow direction of the inert gas in the liquid supply pressure pipe 115, restricting the inert gas therein to flow only from the inert gas supply mechanism 2 to the liquid storage section 110.

[0031] In some embodiments, the liquid pump connected to the liquid storage section 110 pumps out the IPA liquid therein, and the liquid pump pumps the IPA liquid in the liquid storage section 110 into the IPA flow control pipe 114.

[0032] In some embodiments, a first switch control valve is provided between the IPA supply unit 100 and the storage unit 110. The first switch control valve is a first switch valve 112. A level switch 118 is provided in the storage unit 110, and the level switch 118 is signal-connected to the first switch control valve. The level switch 118 is configured to: when the IPA level in the storage unit 110 is lower than a set value, send a signal to the first switch control valve to open the first switch control valve to replenish IPA liquid from the IPA supply unit 100 into the storage unit 110; when the IPA level in the storage unit 110 is higher than the set value, send a signal to the first switch control valve to close the first switch control valve to stop the IPA supply unit 100 from supplying IPA liquid into the storage unit 110.

[0033] For example, the level switch 118 is a float-type level switch installed inside the liquid storage compartment 110. It monitors the liquid level of IPA in the liquid storage compartment 110 in real time. When the IPA level in the liquid storage compartment 110 reaches the preset target value, the level switch 118 will send an electrical signal (such as an on / off signal); if the liquid level is lower than the preset value, it will also output a corresponding signal. This signal is directly transmitted to the first switching valve 112 to realize the automatic opening and closing of the valve: when the liquid level reaches the target, the level switch 118 sends a signal to close the first switching valve 112, stopping the replenishment of liquid to the liquid storage compartment 110; when the liquid level is lower than the threshold, the signal triggers the first switching valve 112 to open, restoring the liquid supply, ensuring that the IPA level in the liquid storage compartment 110 is stable within the set range. Through the linkage between the liquid level and the valve, the problem of unstable liquid supply at the plant end is solved, avoiding overflow due to excessively high IPA level or interruption of atomization liquid supply due to excessively low IPA level in the liquid storage compartment 110.

[0034] In some embodiments, the system further includes a waste liquid and waste gas collection unit 500; The waste liquid and waste gas collection unit 500 is connected to the liquid storage unit 110 to collect the gas and excess IPA liquid discharged when the liquid storage unit 110 stores liquid.

[0035] Specifically, the waste liquid and waste gas collection unit 500 is connected to the liquid storage unit 110 through the exhaust pipe 510. Since the liquid storage unit 110 is usually a closed liquid storage tank, when the IPA liquid delivered by the IPA supply unit 100 enters the liquid storage unit 110, the gas that was originally present in it will be discharged. Through the exhaust pipe 510 and the waste liquid and waste gas collection unit 500, the discharged gas and some mixed IPA liquid can be collected, which is convenient for subsequent treatment and avoids environmental pollution.

[0036] In some embodiments, a second switch control valve 511 is provided between the liquid storage section 110 and the waste liquid and waste gas collection section 500. The second switch control valve 511 is installed on the exhaust pipe 510 and is configured to open when the IPA supply section 100 supplies IPA liquid to the liquid storage section 110 to discharge the gas and excess IPA liquid in the liquid storage section 110.

[0037] In some embodiments, a one-way exhaust valve 512 is provided between the second switch control valve 511 and the waste liquid and waste gas collection section 500. The one-way exhaust valve 512 is installed on the exhaust pipe 510, and the one-way exhaust valve 512 is configured as follows: The gas and IPA liquid are restricted to flow in one direction between the liquid storage section 110 and the waste liquid and waste gas collection section 500 to prevent the waste liquid and waste gas in the waste liquid and waste gas collection section 500 from flowing back into the liquid storage section 110.

[0038] In some embodiments, a pressure relief valve 513 is provided between the liquid storage section 110 and the waste liquid and waste gas collection section 500. The pressure relief valve 513 is installed on the exhaust pipe 510 and is directly connected to the liquid storage section 110. It is used to release pressure when the pressure in the liquid storage section 110 is too high.

[0039] In some embodiments, the inert gas supply mechanism 2 includes an inert gas supply section 200, which is connected to the Venturi high-pressure atomizer 300, and supplies inert gas to the Venturi high-pressure atomizer 300.

[0040] In some embodiments, the inert gas supply mechanism 2 further includes a third switch control valve 211, which is disposed between the inert gas supply section 200 and the Venturi high-pressure atomizer 300. The third switch control valve 211 is configured to control the on / off state of the inert gas supplied by the inert gas supply section 200 to the Venturi high-pressure atomizer 300.

[0041] Specifically, the inert gas supply unit 200 is connected to the Venturi high-pressure atomizer 300 through the gas supply pipe 210, and the third switch control valve 211 is installed on the gas supply pipe 210.

[0042] In some embodiments, the inert gas supply mechanism 2 further includes a second flow control unit configured to control the flow rate of the inert gas supplied by the inert gas supply unit 200 to the high-pressure atomizing mechanism 3.

[0043] The second flow control unit is installed on the gas supply pipe 210. For example, the second flow control unit is a pressure regulating valve 212.

[0044] Preferably, the second flow control unit further includes a gas flow control valve 213, which is also installed on the gas supply pipe 210 and located between the pressure regulating valve 212 and the Venturi high-pressure atomizer 300, for controlling the flow of the pressure-regulated gas transported in the gas supply pipe 210.

[0045] In some embodiments, the system further includes a control mechanism (not shown), which is signal-connected to the IPA supply mechanism 1 and the inert gas supply mechanism 2, respectively, to control the flow rate of IPA liquid supplied by the IPA supply mechanism 1 and the flow rate of inert gas output by the inert gas supply mechanism 2. Specifically, the control mechanism is signal-connected to the first flow control unit 120 and the second flow control unit, respectively.

[0046] In some embodiments, the Venturi high-pressure atomizer 300 is connected to the wafer cleaning tank 4 via a wafer cleaning gas supply pipe 410, stably supplying IPA mixed gas into the wafer cleaning tank 4. Preferably, a fourth switching valve 411 is installed on the wafer cleaning gas supply pipe 410, and the fourth switching valve 411 controls the on / off of the IPA mixed gas in the wafer cleaning gas supply pipe 410.

[0047] In this application, a Venturi high-pressure atomizer 300 may stably supply IPA mixed gas to a wafer cleaning tank 4, or a Venturi high-pressure atomizer 300 may simultaneously supply IPA mixed gas to two or more wafer cleaning tanks 4, or an IPA supply mechanism 1 and an inert gas supply mechanism 2 may simultaneously supply IPA liquid and inert gas to two or more Venturi high-pressure atomizers 300, with each Venturi high-pressure atomizer 300 connected to at least one wafer cleaning tank 4.

[0048] This application also provides an IPA atomization and concentration control system, see reference. Figure 2 As shown, two Venturi high-pressure atomizers 300 are used to simultaneously supply IPA mixed gas to two wafer cleaning tanks 4, achieving dual-tank cleaning capability. The system includes two independent wafer cleaning tanks, and other core components such as the IPA supply mechanism 1, the inert gas supply mechanism 2, and the control system remain in their original configurations without any additions. To achieve parallel processing in both tanks, the system provided in this embodiment expands the configuration of key actuators such as the first flow control unit 120, the second flow control unit, and the Venturi high-pressure atomizers 300 proportionally. Each wafer cleaning tank 4 is equipped with one Venturi high-pressure atomizer 300, and each Venturi high-pressure atomizer 300 has a first flow control unit 120 and a second flow control unit at its inlet, ensuring that each wafer cleaning tank 4 has independent flow control and atomization capabilities. In terms of process control, the expanded system continues the original control logic and workflow. When performing liquid supply cleaning operations, the system coordinates the operation of each unit according to the established control strategy, and the redundancy design ensures process consistency and stability during dual-tank operation. This expansion solution effectively improves equipment utilization and production capacity while minimizing system complexity. Since each of the two cleaning tanks corresponds to a front-end atomization unit, the system can output different mixed gas concentrations through two Venturi high-pressure atomizers 300. This allows for simultaneous operation of two wafer cleaning tanks 4 executing different process formulations; if one cleaning tank needs to suspend gas supply for maintenance or loading / unloading, the other tank's process can continue.

[0049] This application also provides an IPA atomization and concentration control system, see reference. Figure 3As shown, a Venturi high-pressure atomizer 300 is used to simultaneously supply IPA mixed gas to two wafer cleaning tanks 4. A core control system (including a single first flow control unit 120, a second flow control unit, and the Venturi high-pressure atomizer 300) is retained, while the system outlet architecture is optimized. Two independent gas flow control structures are set between the two wafer cleaning tanks 4 and the Venturi high-pressure atomizer 300. Each gas flow control structure includes at least one fifth switching valve 412 and a gas flow control valve 413, which precisely regulate the atomized gas flow to the two independent wafer cleaning tanks 4. The core advantage of this architecture is that by sharing the atomization and concentration control components consisting of the front-end IPA supply mechanism 1, the inert gas supply mechanism 2, and the high-pressure atomization mechanism 3, the system complexity and hardware cost are significantly reduced. The system maintains uniform atomization concentration control accuracy while achieving independent gas supply to both tanks. In terms of liquid replenishment cleaning function and system control logic, this solution is completely consistent with the system provided in the aforementioned embodiments, ensuring operational consistency and reliability. Because the two cleaning tanks share the same front-end atomization unit, this system can only output a fixed mixed gas concentration. Furthermore, this architecture cannot simultaneously satisfy different process formulations when the two wafer cleaning tanks 4 need to perform different processes. Additionally, if the gas supply to one cleaning tank needs to be suspended for maintenance or loading / unloading, the process in the other tank will also be forcibly interrupted.

[0050] It should be noted that, as Figure 4 As shown in Figure 5, the Venturi high-pressure atomizer 300 includes a mixing channel section 301, a high-pressure conversion section 302, a pressure stabilizing section 303, an outlet connection section 304, and a sealing ring 305. Controllable IPA liquid is sprayed into the mixing channel section 301 through the high-pressure conversion section 302. Controllable inert gas is first pressure-stabilized by the pressure stabilizing section 303 and then introduced into the mixing channel section 301 as a carrier gas. The inert gas as the carrier gas and the IPA as the atomized liquid are mixed in the mixing channel section 301, and finally delivered to the wafer cleaning tank 400 through the outlet connection section 304. The sealing ring 305 provides a seal for the entire system.

[0051] The high-pressure conversion section 302 is designed in the form of a Venturi tube, divided into a convergent section (gradually decreasing cross-sectional area), a throat (the part with the smallest cross-sectional area in the pipe), and a divergent section (gradually expanding section) (the part with the pipe's cross-sectional area gradually recovering to the inlet size). The principle is as follows: High-pressure IPA liquid enters the convergent section from the inlet, where the flow channel cross-sectional area decreases, the fluid is accelerated, and its pressure energy is gradually converted into kinetic energy. At the throat, the flow velocity reaches its peak, and the static pressure drops to its minimum. When this pressure is lower than the saturated vapor pressure of the IPA liquid at that temperature, cavitation occurs inside the liquid, generating tiny bubbles (cavitation nuclei). Simultaneously, extremely high shear forces begin to break up the liquid. Immediately afterwards, the liquid carrying the cavitation nuclei instantly enters the divergent section. Here, the flow channel expands, causing a sharp drop in velocity and a rapid recovery of pressure. This pressure change causes the cavitation nuclei to collapse instantly, releasing enormous energy; simultaneously, under the combined action of strong inertial and shear forces, the liquid is completely broken into fine droplets, achieving intense atomization. Finally, at the end of the divergence section, the pressure of the fully atomized IPA spray tends to stabilize, and it is ejected in a uniform spray pattern. Furthermore, the overall atomization effect can be controlled by adjusting the minimum cross-sectional area of ​​the throat.

[0052] Additionally, it should be noted that the term "inert gas" refers to noble gases, which are the six gaseous elements in Group 18 of the periodic table: helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn). These gases are chemically extremely inert at room temperature and pressure, hardly reacting with other elements, primarily due to the saturation of their outermost electron shells. Inert gases are widely used in lighting, lasers, gas-shielded welding, and other fields.

[0053] In this application, nitrogen is used as the inert gas sample, which is chemically stable, inexpensive, and readily available.

[0054] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0055] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0056] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. An IPA atomization and concentration control system, characterized by, The system comprises an IPA supply mechanism, an inert gas supply mechanism, a high-pressure atomization mechanism, and a wafer cleaning tank, wherein: The IPA supply mechanism is in communication with the inlet of the high-pressure atomization mechanism, and is configured to deliver IPA to the high-pressure atomization mechanism. The inert gas supply mechanism is in communication with the inlet of the high-pressure atomization mechanism, and is configured to deliver inert gas to the high-pressure atomization mechanism. The high-pressure atomization mechanism comprises a Venturi high-pressure atomizer configured to achieve shearing and cavitation atomization of IPA by using the low-pressure area generated at the throat by high-speed fluid, uniformly mix inert gas and IPA liquid, and output atomized gas with stable IPA concentration. The wafer cleaning tank is in communication with the outlet of the high-pressure atomization mechanism, and carries the wafer to be dried.

2. The IPA atomization and concentration control system of claim 1, wherein, The IPA supply mechanism comprises an IPA liquid supply part, a liquid storage part, and a first flow control unit. The IPA liquid supply part is in communication with the liquid storage part, and the liquid storage part is in communication with the high-pressure atomization mechanism, and the first flow control unit is installed between the liquid storage part and the high-pressure atomization mechanism. The liquid storage part is configured to store the IPA liquid output by the IPA liquid supply part and deliver the IPA liquid to the high-pressure atomization mechanism. The first flow control unit is configured to control the flow of the IPA liquid delivered by the liquid storage part to the high-pressure atomization mechanism.

3. The IPA atomization and concentration control system of claim 2, wherein, The inert gas supply mechanism is also in communication with the liquid storage part, and is configured to deliver inert gas to the liquid storage part to pressurize the inside of the liquid storage part and pump out the IPA liquid in the liquid storage part.

4. The IPA atomization and concentration control system of claim 2, wherein, A first on-off control valve is arranged between the IPA liquid supply part and the liquid storage part, and a liquid level switch is arranged in the liquid storage part, and the liquid level switch is in signal connection with the first on-off control valve. The liquid level switch is configured to send a signal to the first on-off control valve to open the first on-off control valve to supplement the IPA liquid from the IPA liquid supply part to the inside of the liquid storage part when the IPA liquid level in the liquid storage part is lower than a set value, and send a signal to the first on-off control valve to close the first on-off control valve to stop the IPA liquid supply part from delivering IPA liquid to the inside of the liquid storage part when the IPA liquid level in the liquid storage part is higher than a set value.

5. The IPA atomization and concentration control system of any of claims 2-4, wherein, The system further comprises a waste liquid and waste gas collection part. The waste liquid and waste gas collection part is in communication with the liquid storage part to collect the gas and excess IPA liquid discharged when the liquid storage part stores liquid.

6. The IPA atomization and concentration control system of claim 5, wherein, A second on-off control valve is arranged between the liquid storage part and the waste liquid and waste gas collection part, and is configured to: be opened to discharge the gas and excess IPA liquid in the liquid storage part when the IPA liquid supply part delivers IPA liquid to the liquid storage part.

7. The IPA atomization and concentration control system of claim 6, wherein, A one-way exhaust valve is arranged between the second on-off control valve and the waste liquid and waste gas collection part, and is configured to: The gas and IPA liquid unidirectional transport between the liquid storage part and the waste liquid and gas collection part is limited, so as to avoid the waste liquid and gas in the waste liquid and gas collection part from flowing back into the liquid storage part.

8. The IPA atomization and concentration control system of claim 1, wherein, The inert gas supply mechanism includes an inert gas supply part in communication with the Venturi high-pressure atomizer, and the inert gas supply part transports inert gas to the Venturi high-pressure atomizer.

9. The IPA atomization and concentration control system of claim 8, wherein, The inert gas supply mechanism further includes a third on-off control valve arranged between the inert gas supply part and the Venturi high-pressure atomizer, and the third on-off control valve is configured to control the on-off of the inert gas transported by the inert gas supply part to the Venturi high-pressure atomizer.

10. The IPA atomization and concentration control system of claim 8 or 9, wherein, The inert gas supply mechanism further includes a second flow control unit configured to control the flow of the inert gas transported by the inert gas supply part to the high-pressure atomization mechanism.

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