Processing method and device for defect detection and computer readable storage medium

Abstract

The invention provides a processing method and device for defect detection and a computer readable storage medium, and relates to the technical field of defect detection. A first optical signal formed by scattering incident light from a light source system by a film on the surface of the wafer and a second optical signal formed by scattering the incident light by particles on the film are obtained, and the system parameters comprise the power of a light source in the light source system and the polarization type of a polarizer between the light source and the incident light; determining a signal-to-noise ratio according to the second optical signal and the first optical signal; determining a system parameter of the light source system under the condition that the signal-to-noise ratio is greater than or equal to a preset value as a target system parameter; and associating the target system parameters with machine parameters for defect detection, wherein the machine parameters comprise the thickness of the film and the material of the film.

Description

Technical Field

[0001] This disclosure relates to the field of defect detection technology, and in particular to a processing method, apparatus and computer-readable storage medium for defect detection. Background Technology

[0002] In the production and application of wafers, it is necessary to detect defects on the surface of the wafers to help determine their quality. Summary of the Invention

[0003] In related technologies, when using thin-film wafers for manufacturing operations (e.g., chip fabrication), the product yield is low. Here, a thin-film wafer refers to a wafer with a thin film formed on its surface.

[0004] Analysis revealed that this was caused by excessive defects on the wafer's thin film.

[0005] Further analysis revealed that system parameters for the light source system used for defect detection need to be configured before performing defect detection on the wafer. The accuracy of the system parameter configuration affects the accuracy of defect detection.

[0006] However, in related technologies, the recommended system parameters are only applicable to wafers without a thin film on the surface. There are no recommended optimal system parameters for thin film wafers, which leads to reduced accuracy of defect detection and low product yield.

[0007] To address the aforementioned problems, the present disclosure proposes the following solutions.

[0008] According to one aspect of the present disclosure, a processing method for defect detection is provided, comprising: acquiring, after repeatedly adjusting system parameters related to a light source system, a first optical signal scattered by a thin film on the surface of a wafer and a second optical signal scattered by particles on the thin film from incident light from the light source system, wherein the system parameters include the power of the light source in the light source system and the polarization type of the polarizer between the light source and the incident light; determining a signal-to-noise ratio based on the second optical signal and the first optical signal; determining the system parameters of the light source system when the signal-to-noise ratio is greater than or equal to a preset value as target system parameters; and associating the target system parameters with machine parameters for defect detection, wherein the machine parameters include the thickness of the thin film and the material of the thin film.

[0009] In some embodiments, the target system parameter is the system parameter corresponding to the adjustment with the highest signal-to-noise ratio among the multiple adjustments.

[0010] In some embodiments, the power value in the target system parameters is a target power value, and the polarization type in the target system parameters is a target polarization type, wherein: while other parameters besides the power remain unchanged, the power value is adjusted in each of the multiple adjustments, wherein when the power value is adjusted to the target power value, the size of the detected particle is closest to the actual size of the particle; and / or while other parameters besides the polarization type remain unchanged, the polarization type is adjusted in each of the multiple adjustments, wherein when the polarization type is adjusted to the target polarization type, the number of detected particles is the highest.

[0011] In some embodiments, when there are multiple power values ​​that make the size of the detected particle closest to the actual size of the particle, the power value that makes the number of detected particles the largest is determined from the multiple power values ​​as the target power value.

[0012] In some embodiments, after each adjustment, a curve reflecting the relationship between the size of the particles and the number of particles is determined; if there are at least two power values ​​that result in the maximum number of detected particles, the target power value is determined from the at least two power values ​​that results in the minimum peak width of the peak containing the maximum number of particles on the curve.

[0013] In some embodiments, the first optical signal includes multiple light intensity values ​​scattered from different regions of the thin film, and the system parameters also include the attenuation degree of the attenuator in the light source system. The attenuation degree in the target system parameters is a target attenuation degree. In this case, while other parameters remain unchanged, the attenuation degree is adjusted in each of the multiple adjustments. When the attenuation degree is adjusted to the target attenuation degree, the difference between the light intensity value of the second optical signal and the average value of the multiple light intensity values ​​is the largest.

[0014] In some embodiments, the machine parameters further include at least one of the precursors for forming the film, the method of forming the film, and the model of the machine for forming the film.

[0015] In some embodiments, for a film to be tested having the machine parameters, defect detection is performed on the film to be tested using the target system parameters associated with the machine parameters.

[0016] According to another aspect of the present disclosure, a processing apparatus for defect detection is provided, comprising: a module configured to perform the method described in any of the above embodiments.

[0017] According to another aspect of the present disclosure, a processing apparatus for defect detection is provided, comprising: a memory; and a processor coupled to the memory, the processor being configured to execute the method described in any of the above embodiments based on instructions stored in the memory.

[0018] According to another aspect of the present disclosure, a computer-readable storage medium is provided, including computer program instructions, wherein the computer program instructions, when executed by a processor, implement the steps of the method described in any of the above embodiments.

[0019] According to another aspect of the present disclosure, a computer program product is provided, including a computer program, wherein when the computer program is executed by a processor, it implements the steps of the method described in any of the above embodiments.

[0020] In this embodiment, after repeatedly adjusting the system parameters related to the light source system, the signal-to-noise ratio (SNR) is determined based on the first light signal scattered by the thin film on the wafer and the second light signal scattered by particles on the thin film. The target system parameters of the light source system with an SNR greater than or equal to a preset value are then correlated with the machine parameters (including the thickness and material of the thin film) for wafer defect detection. In this manner, the SNR is determined based on the light signal acquired when there is a thin film on the wafer surface. Therefore, the accuracy of configuring the system parameters of the light source system can be improved, thereby improving the accuracy of wafer defect detection and contributing to increased product yield.

[0021] The technical solutions of this disclosure will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the structure of a light source system according to some embodiments of the present disclosure.

[0024] Figure 2 This is a schematic flowchart of a processing method for defect detection according to some embodiments of the present disclosure.

[0025] Figure 3A This is a schematic diagram illustrating the relationship between particle size and particle quantity according to some embodiments of the present disclosure.

[0026] Figure 3BThis is a schematic diagram illustrating the relationship between particle size and particle quantity according to other embodiments of the present disclosure.

[0027] Figure 4 This is a schematic diagram of the structure of a processing apparatus for defect detection according to some embodiments of the present disclosure.

[0028] Figure 5 This is a schematic diagram of the structure of a processing apparatus for defect detection according to other embodiments of the present disclosure. Detailed Implementation

[0029] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0030] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of this disclosure.

[0031] At the same time, it should be understood that, for ease of description, the dimensions of the various parts shown in the accompanying drawings are not necessarily drawn according to actual scale.

[0032] Techniques, methods, and equipment known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and equipment should be considered part of the specification.

[0033] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values.

[0034] It should be noted that similar labels and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0035] Furthermore, in the description of this disclosure, the terms "first," "second," "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or order. Similarly, although operations are depicted in a specific order in the accompanying drawings, this should not be construed as requiring such operations to be performed in the specific order shown or in sequential order, or requiring the execution of all illustrated operations to achieve the desired result. In some cases, multitasking and parallel processing can be advantageous.

[0036] Figure 1This is a schematic diagram of the structure of a light source system according to some embodiments of the present disclosure.

[0037] like Figure 1 As shown, the light source system includes a light source 101 and a polarizer. Here, the polarizer is located between the light source 101 and the incident light, and the polarizer includes a polarizer 102 and an analyzer 104.

[0038] In some embodiments, the light emitted from the light source 101 passes through the polarizer 102 and then strikes the analyzer 104. Here, the light emitted from the analyzer 104 is the incident light.

[0039] As some implementations, polarizer 102 is configured to polarize the light emitted from light source 101, and analyzer 104 is configured to polarize the light from polarizer 102.

[0040] As some implementation methods, the incident light can be directed perpendicularly to the surface of the wafer or directed obliquely to the surface of the wafer.

[0041] Here, when the incident light is directed perpendicularly to the wafer, the corresponding optical path can be called the normal optical path; when the incident light is directed obliquely to the wafer, the corresponding optical path can be called the oblique optical path.

[0042] As one implementation, the normal optical path or the tilted optical path can be selected by controlling the reflector. For example, the direction of light from the polarizer 102 can be changed by controlling the reflector so that the light beam enters the normal optical path or the tilted optical path.

[0043] In some embodiments, the light source system further includes a beam shaping unit 103 located between the polarizer 102 and the analyzer 104. The beam shaping unit 103 is configured to perform beam shaping on the light from the polarizer 102. That is, the analyzer 104 can polarize the light from the beam shaping unit 103.

[0044] In some embodiments, the light source system further includes a signal acquisition unit (not shown). The signal acquisition unit is configured to acquire the light signal scattered by the surface of the wafer after the incident light strikes the surface of the wafer. The light source acquisition unit may be, for example, an optical camera.

[0045] As one implementation, signal acquisition units can be arranged at multiple locations within the light source system. That is, a signal acquisition unit can be arranged at each location to acquire the light signal scattered by the wafer surface at each location. In this case, for example, the strongest light signal among all acquired light signals can be used as the light signal for subsequent analysis; or, according to actual needs, the light signal for subsequent analysis can be determined from these multiple light signals.

[0046] In some embodiments, the light source system further includes an attenuator 105 between the light source 101 and the polarizer 102. The attenuator 105 is configured to reduce the intensity of the light beam directed toward the polarizer 102.

[0047] As some implementations, the attenuation level can be from 0% to 90%. For example, the attenuation level can be no attenuation (i.e., 0%), 30% attenuation, 50% attenuation, or 70% attenuation.

[0048] Next, combined Figure 1 and Figure 2 This describes how to utilize a light source system to implement the processing method for defect detection according to this disclosure.

[0049] Figure 2 This is a schematic flowchart of a processing method for defect detection according to some embodiments of the present disclosure.

[0050] In step 202, after repeatedly adjusting the system parameters related to the light source system, a first light signal is obtained from the incident light from the light source system being scattered by the thin film on the surface of the wafer, and a second light signal is obtained from the incident light being scattered by particles on the thin film.

[0051] Here, the system parameters include the power of the light source 101 in the light source system, and the polarization type of the polarizer between the light source 101 and the incident light. As some implementations, the polarization type includes P-polarization, S-polarization, and no polarization.

[0052] The first optical signal can also be called the background optical signal, and the second optical signal can also be called the defect optical signal.

[0053] For example, the particles on the film are identical particles, that is, particles of the same material and the same size. For example, in the case of spherical particles, the particle size can refer to the diameter of the particle, which can be, for example, 90 nanometers, 200 nanometers, 500 nanometers, or 1 micrometer.

[0054] It should be understood that the purpose of the particles is to simulate defects on the thin film of the wafer. The particles can be placed on the thin film by spraying or other methods, which are not limited here. A wafer with particles on its thin film surface can be called a film particle wafer.

[0055] It should be understood that the first light signal scattered by the thin film on the surface of the wafer and the second light signal scattered by the particles on the thin film can be obtained by analyzing the light signal scattered by the surface of the wafer after the incident light hits the surface of the wafer. The method of analysis is not limited here.

[0056] In step 204, the signal-to-noise ratio (SNR) is determined based on the second optical signal scattered by the particles on the thin film and the first optical signal scattered by the thin film on the surface of the wafer. The determination of the SNR will be explained later with reference to some embodiments.

[0057] In step 206, the system parameters of the light source system that have a signal-to-noise ratio greater than or equal to a preset value are determined as the target system parameters. It should be understood that when the signal-to-noise ratio is greater than or equal to the preset value, the first optical signal and the second optical signal can be clearly distinguished. The preset value can, for example, be greater than or equal to 2.

[0058] For ease of description, the power value in the target system parameters will be referred to as the target power value, and the polarization type in the target system parameters will be referred to as the target polarization type.

[0059] In step 208, the target system parameters are correlated with the machine parameters for defect detection. Here, the machine parameters include the film thickness and the film material.

[0060] As some embodiments, the material of the thin film includes metals or compounds. For example, metals include copper (Cu) or tantalum (Ta); and compounds include, for example, silicon oxycarbide (SiOC), silicon nitride (SiN), silicon dioxide (SiO2), or polymers.

[0061] In the above embodiments, after repeatedly adjusting the system parameters related to the light source system, the signal-to-noise ratio (SNR) is determined based on the first light signal scattered by the thin film on the wafer and the second light signal scattered by particles on the thin film. The target system parameters of the light source system with an SNR greater than or equal to a preset value are then correlated with the machine parameters (including the thickness and material of the thin film) for wafer defect detection. In this manner, the SNR is determined based on the light signal acquired when there is a thin film on the wafer surface. Therefore, the accuracy of configuring the system parameters of the light source system can be improved, thereby improving the accuracy of wafer defect detection and contributing to increased product yield.

[0062] In some embodiments, the target system parameter is the system parameter corresponding to the adjustment with the highest signal-to-noise ratio among multiple adjustments.

[0063] In other words, when adjusting the system parameters related to the light source system multiple times, each adjustment will result in a set of system parameters, and each set of system parameters will correspond to a signal-to-noise ratio (SNR). Therefore, multiple adjustments will result in multiple SNRs. In this case, the system parameter corresponding to the highest SNR among the multiple SNRs is taken as the target system parameter.

[0064] In this way, by taking the system parameter corresponding to the adjustment with the highest signal-to-noise ratio among multiple adjustments as the target system parameter, the first optical signal and the second optical signal can be distinguished more clearly, further improving the accuracy of the configuration of the system parameters of the light source system, thereby further improving the accuracy of defect detection for wafers, and further helping to improve the product yield.

[0065] The following examples illustrate the conditions that different parameters in the target system parameters must satisfy.

[0066] In some embodiments, while keeping other parameters except the power of the light source 101 constant, the power value is adjusted in each of the multiple adjustments to the system parameters related to the light source system. Here, when the power value is adjusted to the target power value, the detected particle size is closest to the actual particle size. As some embodiments, the power can be adjusted by adjusting the percentage of the power relative to the maximum power of the light source. For example, the power can be 10%, 33.3%, 50%, 66.7%, or 100% of the maximum power.

[0067] In other words, among multiple adjustments to the system parameters related to the light source system, the particle size detected was closest to the actual particle size during the adjustment where the power value was adjusted to the target power value.

[0068] Therefore, by determining the target power value based on the particle size being closest to the actual particle size, the accuracy of the configuration of the system parameters of the light source system can be further improved, thereby further improving the accuracy of defect detection on wafers and further helping to improve product yield.

[0069] In other embodiments, while keeping all parameters except the polarization type of the polarizer constant, the polarization type is adjusted in multiple adjustments to the system parameters related to the light source system. Here, the number of detected particles is highest when the polarization type is adjusted to the target polarization type.

[0070] In other words, among the multiple adjustments to the system parameters related to the light source system, the number of particles detected was highest in the single adjustment where the polarization type was changed to the target polarization type.

[0071] Therefore, determining the target polarization type based on maximizing the number of detected particles can further improve the accuracy of configuring the system parameters of the light source system, thereby further improving the accuracy of defect detection on wafers and further contributing to improving product yield.

[0072] In some embodiments, when there are multiple power values ​​that make the size of the detected particles closest to the actual size of the particles, the power value that makes the number of detected particles the largest is determined from these multiple power values ​​as the target power value.

[0073] For example, if the actual particle size is 90 nanometers, the particle size detected at power value A is 90 nanometers, and the particle size detected at power value B is also 90 nanometers, then 150 particles with a size of 90 nanometers are detected at power value A, and 50 particles with a size of 90 nanometers are detected at power value A. In this case, power value A is determined as the target power value.

[0074] In the above embodiments, the target power value not only ensures that the detected particle size is closest to the actual particle size, but also maximizes the number of detected particles. This further improves the accuracy of the system parameter configuration of the light source system, thereby further improving the accuracy of wafer defect detection and ultimately contributing to higher product yield.

[0075] In some embodiments, after each adjustment, a curve reflecting the relationship between particle size and particle number is determined; if at least two power values ​​exist that result in the maximum number of detected particles, the target power value is determined from the at least two power values ​​that results in the minimum peak width of the peak containing the maximum number of particles on the curve.

[0076] Next, combined Figure 3A and Figure 3B This paper introduces a method for determining the target power value when there are multiple power values ​​that make the detected particle size closest to the actual particle size, and at least two power values ​​that maximize the number of detected particles.

[0077] Figure 3A This is a schematic diagram illustrating the relationship between particle size and particle quantity according to some embodiments of the present disclosure. Figure 3B This is a schematic diagram illustrating the relationship between particle size and particle quantity according to other embodiments of the present disclosure.

[0078] In some embodiments, such as Figure 3A and Figure 3B As shown, Figure 3A and Figure 3B The horizontal axis represents the size of the detected particles, and the vertical axis represents the number of detected particles. Each detected particle size corresponds to a specific number of detected particles. Curve 301 reflects the relationship between particle size and particle number. Curve 301 can also be called the Intensity-Dsize Curve.

[0079] As one implementation, an intensity-defect size curve for the wafer can be generated based on the refractive index and extinction coefficient (NK value) of the thin film and system parameters. Here, the NK value is related to the thickness of the thin film and the material of the thin film. Those skilled in the art will understand that the intensity-defect size curve can be generated by importing the NK value and system parameters into simulation software.

[0080] like Figure 3A As shown, the power value A detected 150 particles with a size of 90 nanometers. Figure 3B As shown, the number of 90-nanometer particles detected at power value B is also 150. In this case, the peak width of the peak containing the number of 90-nanometer particles detected at power value A is the smallest, and the target power value is power A.

[0081] In the above embodiments, the target power value not only ensures that the size of the detected particles is closest to the actual particle size and that the number of detected particles is maximized, but also minimizes the peak width of the peak containing the maximum number of particles on the curve, i.e., the peak is more convergent. This further improves the accuracy of the system parameter configuration of the light source system, thereby further improving the accuracy of wafer defect detection and ultimately contributing to higher product yield.

[0082] In some embodiments, the first optical signal, in which incident light is scattered by a thin film on the surface of a wafer, includes multiple light intensity values ​​scattered by different regions of the thin film. The system parameters related to the light source system also include the attenuation level of the attenuator 105 in the light source system. Similarly, the attenuation level in the target system parameters will be referred to as the target attenuation level below. It should be understood that each region of the thin film corresponds to a light intensity value; that is, the first optical signal includes the light intensity value scattered by each region of the thin film.

[0083] In this case, with all parameters except the attenuation level of attenuator 105 remaining unchanged, the attenuation level is adjusted in multiple adjustments related to the light source system. Here, when the attenuation level is adjusted to the target attenuation level, the difference between the light intensity value of the second light signal and the average of multiple light intensity values ​​of the first light signal is the largest.

[0084] In other words, during the multiple adjustments to the system parameters related to the light source system, the difference between the average value of multiple light intensity values ​​of the first light signal and the light intensity value of the second light signal is the largest during the adjustment of the attenuation level to the target attenuation level.

[0085] In the above embodiments, the attenuation level of the attenuator 105 is determined with the objective of maximizing the difference between the light intensity value of the second optical signal and the average of multiple light intensity values ​​of the first optical signal. This allows for a clearer distinction between the first and second optical signals. Consequently, the accuracy of the system parameter configuration of the light source system can be further improved, thereby further enhancing the accuracy of wafer defect detection and ultimately contributing to higher product yield.

[0086] In some embodiments, the signal-to-noise ratio is calculated using the following formula:

[0087]

[0088] Here, S / N represents the signal-to-noise ratio, defect_signal represents the second optical signal, Haze_Average_Noise represents the average of multiple light intensity values ​​of the first optical signal, Haze_Max_Noise represents the maximum value among multiple light intensity values ​​of the first optical signal, and Haze_Min_Noise represents the minimum value among multiple light intensity values ​​of the first optical signal.

[0089] Thus, the above formula can take into account the relationship between the average values ​​of multiple light intensity values ​​of the second optical signal and the first optical signal, as well as the distribution of multiple light intensity values ​​of the first optical signal, to accurately determine the signal-to-noise ratio. This can further improve the accuracy of the configuration of system parameters of the light source system, thereby further improving the accuracy of defect detection for wafers and further helping to improve product yield.

[0090] In some embodiments, the equipment parameters also include at least one of the precursors for forming the thin film, the method of forming the thin film, and the model of the equipment for forming the thin film. For example, the method of forming the thin film may be magnetron sputtering, chemical vapor deposition, or the like.

[0091] In this way, the machine parameters associated with the target system parameters include more information about the thin film. Subsequently, the correlation can be used more accurately to detect defects in the thin film to be tested, thereby further improving the accuracy of defect detection for wafers and further helping to improve product yield.

[0092] In some embodiments, the equipment parameters may also include two or three of the following: the precursor for forming the thin film, the method of forming the thin film, and the model of the equipment for forming the thin film, in order to further improve the accuracy of defect detection for wafers and further help to improve product yield.

[0093] In some embodiments, the system parameters also include at least one of Throughput Mode and Minimum Size.

[0094] Here, throughput modes include High Throughput (HTO) mode, Standard Throughput (STO) mode, and High Sensitivity (HSO) mode. In HTO mode, the scan time of the light signal scattered by the wafer surface is shorter than that in STO mode, and the scan time in STO mode is shorter than that in HSO mode.

[0095] For example, HTO mode can be selected when scanning efficiency is prioritized; conversely, HSO mode can be selected when scanning sensitivity is prioritized. It should be understood that the throughput mode can be selected based on the actual situation.

[0096] The minimum size refers to the smallest particle size corresponding to the second light signal scattered by the particle acquired by the signal acquisition unit. For example, when there is only one signal acquisition unit, the minimum size is one; or, for example, when there are multiple signal acquisition units, the minimum size is multiple.

[0097] Thus, the machine parameters also include more information that can further improve the accuracy of defect detection for wafers and further help improve product yield.

[0098] As one implementation method, as shown in Table 1, the target system parameters can be associated with the machine parameters in tabular form.

[0099] Table 1

[0100]

[0101] In Table 1, the thin film material is copper (Cu), the equipment model is A1, the film thickness is 330 angstroms, the precursor is copper, and the formation method is radio frequency (RT) magnetron sputtering in an argon (Ar) atmosphere. In this case, the target system parameters (formulation B1 in Table 1) are: flux mode HTO, light source power 76.67%, optical parameters C1, and minimum size D1.

[0102] The thin film material is silicon dioxide (SiO2), the machine type is A2, the film thickness is 500 angstroms, the precursors are silane (SiH4) and nitrous oxide (N2O), and the formation method is plasma-enhanced oxide (PEOX) generated by plasma-enhanced chemical vapor deposition (PECVD). In this case, the target system parameters (formulation B2 in Table 1) are: flux mode STO, light source power 100.00%, optical parameters C2, and minimum size D2.

[0103] Here, the optical parameters include the polarization type of the polarizer and the attenuation degree of the attenuator 105, and the minimum size depends on the number of signal acquisition units.

[0104] In some embodiments, for a film to be tested having machine parameters, defect detection is performed on the film to be tested using target system parameters associated with the machine parameters.

[0105] In other words, for thin films with the same system parameters, the light source system can directly use the associated target system parameters to perform defect detection on the thin film.

[0106] In this way, for films under test with the same system parameters, the target system parameters can be quickly determined, which helps to improve the efficiency of defect detection.

[0107] In some embodiments, the particles on the film surface are silica particles. This reduces the cost of the processing method for defect detection according to this disclosure.

[0108] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus embodiments, since they largely correspond to the method embodiments, the descriptions are relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0109] In some embodiments, the processing apparatus for defect detection includes a module for performing the method of any of the above embodiments.

[0110] Figure 4 This is a schematic diagram of the structure of a processing apparatus for defect detection according to some embodiments of the present disclosure.

[0111] like Figure 4 As shown, the processing device for defect detection includes an acquisition module 401, a first determination module 402, a second determination module 403, and an association module 404.

[0112] The acquisition module 401 is configured to acquire, after multiple adjustments to system parameters related to the light source system, a first optical signal scattered by a thin film on the surface of a wafer from the incident light source system, and a second optical signal scattered by particles on the thin film from the incident light. Here, the system parameters include the power of the light source in the light source system and the polarization type of the polarizer between the light source and the incident light.

[0113] The first determining module 402 is configured to determine the signal-to-noise ratio based on the second optical signal and the first optical signal.

[0114] The second determining module 403 is configured to determine the system parameters of the light source system when the signal-to-noise ratio is greater than or equal to a preset value as the target system parameters.

[0115] The association module 404 is configured to associate target system parameters with machine parameters for defect detection. Here, the machine parameters include the film thickness and the film material.

[0116] In some embodiments, the processing apparatus for defect detection may further include other modules to perform the processing method for defect detection of any of the above embodiments.

[0117] Figure 5 This is a schematic diagram of the structure of a processing apparatus for defect detection according to other embodiments of the present disclosure.

[0118] like Figure 5 As shown, the processing apparatus 500 for defect detection includes a memory 501 and a processor 502 coupled to the memory 501. The processor 502 is configured to execute the method of any of the foregoing embodiments based on instructions stored in the memory 501.

[0119] The memory 501 may include, for example, system memory, fixed non-volatile storage media, etc. The system memory may store, for example, an operating system, application programs, a boot loader, and other programs.

[0120] In some embodiments, the processing apparatus 500 for defect detection may further include an input / output interface 503, a network interface 504, a storage interface 505, etc. The input / output interface 503, network interface 504, and storage interface 505, as well as the memory 501 and processor 502, may be connected via, for example, a bus 506. The input / output interface 503 provides a connection interface for input / output devices such as a display, mouse, keyboard, and touchscreen. The network interface 504 provides a connection interface for various networked devices. The storage interface 505 provides a connection interface for external storage devices such as SD cards and USB flash drives.

[0121] In some embodiments, the processing apparatus for defect detection is a defect detection machine. In this case, the defect detection machine also includes a light source system.

[0122] This disclosure also provides a computer-readable storage medium including computer program instructions that, when executed by a processor, implement the steps of the method in any of the above embodiments.

[0123] This disclosure also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the method in any of the above embodiments.

[0124] The embodiments of this disclosure have now been described in detail. To avoid obscuring the concept of this disclosure, some details known in the art have not been described. Those skilled in the art can fully understand how to implement the technical solutions disclosed herein based on the above description.

[0125] Those skilled in the art will understand that embodiments of this disclosure can be provided as methods, systems, or computer program products. Therefore, this disclosure can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this disclosure can take the form of a computer program product embodied on one or more computer-usable non-transitory storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0126] This disclosure is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this disclosure. It should be understood that the functions specified in one or more flowchart illustrations and / or one or more blocks in a block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate functions for implementing the functions in the flowchart illustrations. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0127] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0128] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0129] While specific embodiments of this disclosure have been described in detail by way of examples, those skilled in the art should understand that the examples are for illustrative purposes only and not intended to limit the scope of this disclosure. Those skilled in the art should understand that modifications can be made to the above embodiments or equivalent substitutions can be made to some technical features without departing from the scope and spirit of this disclosure. The scope of this disclosure is defined by the appended claims.

Claims

1. A processing method for defect detection, comprising: After repeatedly adjusting the system parameters related to the light source system, a first optical signal is obtained from the incident light from the light source system being scattered by a thin film on the surface of the wafer, and a second optical signal is obtained from the incident light being scattered by particles on the thin film. The system parameters include the power of the light source in the light source system and the polarization type of the polarizer between the light source and the incident light. The signal-to-noise ratio is determined based on the second optical signal and the first optical signal; The system parameters of the light source system under the condition that the signal-to-noise ratio is greater than or equal to a preset value are determined as the target system parameters; and The target system parameters are correlated with machine parameters for defect detection, the machine parameters including the thickness of the film and the material of the film.

2. The method according to claim 1, wherein, The target system parameter is the system parameter corresponding to the adjustment with the highest signal-to-noise ratio among the multiple adjustments.

3. The method according to claim 2, wherein, The power value in the target system parameters is the target power value, and the polarization type in the target system parameters is the target polarization type, wherein: With all parameters except the power unchanged, the power value is adjusted in each of the multiple adjustments, wherein the detected particle size is closest to the actual particle size when the power value is adjusted to the target power value; and / or With all parameters except the polarization type remaining unchanged, the polarization type is adjusted in each of the multiple adjustments, wherein the number of particles detected is the highest when the polarization type is adjusted to the target polarization type.

4. The method according to claim 3, wherein: If there are multiple power values ​​that make the size of the detected particle closest to the actual size of the particle, the power value that makes the number of detected particles the largest is determined from the multiple power values ​​as the target power value.

5. The method according to claim 4, wherein: After each adjustment, a curve reflecting the relationship between the size of the particles and the number of particles is determined; If there are at least two power values ​​that maximize the number of detected particles, the target power value is determined from the at least two power values ​​that minimizes the peak width of the peak containing the maximum number of particles on the curve.

6. The method according to any one of claims 2-5, wherein, The first optical signal includes multiple light intensity values ​​scattered from different regions of the thin film. The system parameters also include the attenuation degree of the attenuator in the light source system. The attenuation degree in the target system parameters is the target attenuation degree, wherein: With all parameters except the attenuation level remaining unchanged, the attenuation level is adjusted in each of the multiple adjustments. When the attenuation level is adjusted to the target attenuation level, the difference between the light intensity value of the second optical signal and the average value of the multiple light intensity values ​​is the largest.

7. The method according to any one of claims 1-5, wherein, The machine parameters also include at least one of the following: the precursor for forming the film, the method of forming the film, and the model of the machine for forming the film.

8. The method according to any one of claims 1-5, further comprising: For a film to be tested with the aforementioned machine parameters, defect detection is performed on the film using the target system parameters associated with the machine parameters.

9. A processing apparatus for defect detection, comprising: Memory; as well as A processor coupled to the memory is configured to execute the method of any one of claims 1-8 based on instructions stored in the memory.

10. A computer-readable storage medium comprising a computer program, wherein, When the computer program is executed by a processor, it implements the steps of the method described in any one of claims 1-8.

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