Modeling method and device for compact model of three-dimensional groove ferroelectric capacitor and electronic equipment
By acquiring geometric structure and process error data of three-dimensional trench capacitors, and constructing a simplified model using the equivalent region method and Monte Carlo framework, the problem of large prediction deviation in the performance of three-dimensional trench capacitors is solved, thereby improving the accuracy of electrical performance prediction and computational efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-01
- Publication Date
- 2026-03-13
AI Technical Summary
Existing technologies struggle to accurately simulate the physical structure of three-dimensional trench capacitors, leading to significant deviations in performance predictions and impacting the design accuracy and reliability assessment of three-dimensional ferroelectric memories and neuromorphic computing chips.
By acquiring the geometric structure data and process error data of the three-dimensional trench capacitor, the equivalent region method is used to divide the independent electrical regions, determine the electrical weighting factor and electric field enhancement factor, construct a simplified model, and combine it with the Monte Carlo framework to generate a compact model.
It improves the accuracy of electrical performance prediction, enhances computational efficiency, and solves the problem of large deviations in electrical performance prediction of simulation models.
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Figure CN121661244A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor integrated circuit technology, and in particular to a method, apparatus and electronic device for modeling a compact model of a three-dimensional trench ferroelectric capacitor. Background Technology
[0002] In related technologies, based on the idealized one-dimensional assumption of uniform electric field and uniform material, the structure of ferroelectric capacitors is regarded as an ideal parallel plate capacitor to construct a compact planar capacitor model, and multiphysics simulation tools such as finite element analysis or phase field simulation are used to analyze the capacitor model.
[0003] However, related technologies struggle to simulate the physical structure of 3D trench capacitors, leading to significant deviations in model simulations. Furthermore, they fail to address potential process defects and fluctuations encountered in 3D trench capacitor manufacturing, resulting in substantial performance prediction errors. This hinders the design accuracy, reliability assessment, and yield prediction of 3D ferroelectric memories and neuromorphic computing chips, necessitating urgent solutions. Summary of the Invention This invention provides a method, apparatus, and electronic device for modeling a compact three-dimensional trench ferroelectric capacitor, which solves the problem of large deviations in the electrical performance prediction of simulation models due to the lack of manufacturing process error data in related technologies, thereby improving the accuracy of electrical performance prediction and increasing computational efficiency.
[0004] To achieve the above objectives, a first aspect of the present invention provides a method for modeling a compact three-dimensional trench ferroelectric capacitor, comprising the following steps: acquiring geometric structure data and process error data of the target three-dimensional trench capacitor; based on the geometric structure data of the target three-dimensional trench capacitor, dividing the target three-dimensional trench capacitor into multiple independent electrical regions according to a preset equivalent region method, and determining the electrical weight factor and electric field enhancement factor of each independent electrical region; constructing a simplified model of the target three-dimensional trench capacitor based on the electrical weight factor and electric field enhancement factor of each independent electrical region; and generating a compact model of the three-dimensional trench ferroelectric capacitor based on the process error data and the simplified model of the target three-dimensional trench capacitor, according to a pre-constructed Monte Carlo framework.
[0005] Furthermore, in some embodiments, the geometric data of the target three-dimensional trench capacitor includes at least one of the following: the thickness of the ferroelectric layer, the trench depth, the roughness, the aspect ratio, and the radius of curvature at the corner.
[0006] Further, in some embodiments, the plurality of independent electrical regions include a bottom plate region, a sidewall region, and a corner region. Determining the electrical weighting factor and electric field enhancement factor for each of the plurality of independent electrical regions includes: determining the electrical weighting factor of the bottom plate region, the electrical weighting factor of the target sidewall region, and the electrical weighting factor of the corner region based on the area ratio between the bottom plate region, the target sidewall region, and the corner region, and the polarization ratio between the bottom plate region, the target sidewall region, and the corner region; and determining the electric field enhancement factor of the bottom plate region, the electric field enhancement factor of the target sidewall region, and the electric field enhancement factor of the corner region based on the deviation values of the bottom plate region, the target sidewall region, and the corner region relative to the reference electric field plane, respectively.
[0007] Further, in some embodiments, the step of constructing a simplified model of the target three-dimensional trench capacitor based on the plurality of independent electrical regions, the electrical weighting factor of each electrical region, and the electric field enhancement factor of each independent electrical region includes: obtaining the thickness of the ferroelectric layer in each independent electrical region; obtaining the actual effective electric field of the bottom plate region, the actual effective electric field of the target sidewall region, and the actual effective electric field of the corner region based on the thickness of the ferroelectric layer in each independent electrical region, the electric field enhancement factor of each independent electrical region, and the external voltage of each independent electrical region; and obtaining the actual effective electric field of the bottom plate region based on the actual effective electric field of the target sidewall region. The polarization value of the bottom plate region is obtained based on the actual effective electric field and the electrical weighting factor of the bottom plate region; the polarization value of the target sidewall region is obtained based on the actual effective electric field and the electrical weighting factor of the target sidewall region; the polarization value of the corner region is obtained based on the actual effective electric field and the electrical weighting factor of the corner region; the total polarization value of the target three-dimensional trench capacitor is obtained based on the polarization value of the bottom plate region, the polarization value of the target sidewall region, and the polarization value of the corner region, and a simplified model of the target three-dimensional trench capacitor is constructed based on the total polarization value of the target three-dimensional trench capacitor.
[0008] Furthermore, in some embodiments, the step of generating a compact model of a three-dimensional trench ferroelectric capacitor based on the process error data and the simplified model of the target three-dimensional trench capacitor, according to a pre-constructed Monte Carlo framework, includes: performing AND processing on the process error data to obtain the statistical distribution result of the process error data; generating parameter samples corresponding to each trench capacitor based on the statistical distribution result of the process error data according to the pre-constructed Monte Carlo framework; and obtaining the compact model of the three-dimensional trench ferroelectric capacitor based on the parameter samples corresponding to each trench capacitor.
[0009] The compact modeling method for a three-dimensional trench ferroelectric capacitor provided by the present invention first obtains the geometric structure data and process error data of the target three-dimensional trench capacitor, then divides the independent electrical regions by a preset equivalent region method, determines the electrical weighting factor and electric field enhancement factor of each region, and constructs a simplified model, and finally combines the process error data with the pre-constructed Monte Carlo framework to generate a compact model of the three-dimensional trench ferroelectric capacitor. This solves the problem of large deviations in the electrical performance prediction of simulation models caused by the lack of manufacturing process error data in related technologies, improves the accuracy of electrical performance prediction, and increases computational efficiency.
[0010] To achieve the above objectives, a second aspect of the present invention provides a compact modeling device for a three-dimensional trench ferroelectric capacitor, comprising: an acquisition module for acquiring geometric structure data and process error data of a target three-dimensional trench capacitor; a construction module for dividing the target three-dimensional trench capacitor into multiple independent electrical regions based on the geometric structure data of the target three-dimensional trench capacitor according to a preset equivalent region method, determining an electrical weight factor and an electric field enhancement factor for each independent electrical region, and constructing a simplified model of the target three-dimensional trench capacitor based on the electrical weight factor and the electric field enhancement factor of each independent electrical region; and a generation module for generating the compact model of the three-dimensional trench ferroelectric capacitor based on the process error data and the simplified model of the target three-dimensional trench capacitor, according to a pre-constructed Monte Carlo framework.
[0011] Furthermore, in some embodiments, the geometric data of the target three-dimensional trench capacitor includes at least one of the following: the thickness of the ferroelectric layer, the trench depth, the roughness, the aspect ratio, and the radius of curvature at the corner.
[0012] Further, in some embodiments, the construction module is specifically used to: determine the electrical weighting factor of the bottom plate region, the electrical weighting factor of the target sidewall region, and the electrical weighting factor of the corner region based on the area ratio between the bottom plate region, the target sidewall region, and the corner region, and the polarization ratio between the bottom plate region, the target sidewall region, and the corner region; and determine the electric field enhancement factor of the bottom plate region, the electric field enhancement factor of the target sidewall region, and the electric field enhancement factor of the corner region based on the deviation values of the bottom plate region, the target sidewall region, and the corner region relative to the reference electric field plane, respectively.
[0013] Further, in some embodiments, the construction module is also used to: obtain the thickness of the ferroelectric layer in each independent electrical region; obtain the actual effective electric field of the bottom plate region, the actual effective electric field of the target sidewall region, and the actual effective electric field of the corner region based on the thickness of the ferroelectric layer in each independent electrical region, the electric field enhancement factor of each independent electrical region, and the external voltage of each independent electrical region; obtain the polarization value of the bottom plate region based on the actual effective electric field of the bottom plate region and the electric weighting factor of the bottom plate region; obtain the polarization value of the target sidewall region based on the actual effective electric field of the target sidewall region and the electric weighting factor of the target sidewall region; obtain the polarization value of the corner region based on the actual effective electric field of the corner region and the electric weighting factor of the corner region; obtain the total polarization value of the target three-dimensional trench capacitor based on the polarization value of the bottom plate region, the polarization value of the target sidewall region, and the polarization value of the corner region, and construct a simplified model of the target three-dimensional trench capacitor based on the total polarization value of the target three-dimensional trench capacitor.
[0014] Furthermore, in some embodiments, the generation module is specifically used to: perform AND processing on the process error data to obtain the statistical distribution result of the process error data; generate parameter samples corresponding to each trench capacitor based on a pre-constructed Monte Carlo framework and according to the statistical distribution result of the process error data; and obtain a compact model of the three-dimensional trench ferroelectric capacitor based on the parameter samples corresponding to each trench capacitor.
[0015] The compact modeling device for a three-dimensional trench ferroelectric capacitor provided in this embodiment of the invention first acquires the geometric structure data and process error data of the target three-dimensional trench capacitor, then divides the independent electrical regions using the preset equivalent region method, determines the electrical weighting factor and electric field enhancement factor of each region, and constructs a simplified model. Finally, it combines the process error data with the pre-constructed Monte Carlo framework to generate a compact model of the three-dimensional trench ferroelectric capacitor. This solves the problem of large deviations in the electrical performance prediction of simulation models caused by the lack of manufacturing process error data in related technologies, improves the accuracy of electrical performance prediction, and increases computational efficiency.
[0016] To achieve the above objectives, a third aspect of the present invention provides an electronic device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the compact modeling method for three-dimensional trench ferroelectric capacitors as described in the above embodiments.
[0017] To achieve the above objectives, a fourth aspect of the present invention provides a computer-readable storage medium having a computer program stored thereon, which is executed by a processor to implement the compact modeling method for three-dimensional trench ferroelectric capacitors as described in the above embodiments.
[0018] A fifth aspect of the present invention provides a computer program product, including a computer program that is executed to implement the compact modeling method for three-dimensional trench ferroelectric capacitors as described in the above embodiments.
[0019] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description
[0020] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein: Figure 1 A flowchart of a compact modeling method for a three-dimensional trench ferroelectric capacitor provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of a three-dimensional trench capacitor and its region division according to a specific embodiment of the present invention; Figure 3 A schematic diagram comparing the simulation curves of a conventional planar capacitor model and a three-dimensional trench ferroelectric capacitor according to a specific embodiment of the present invention; Figure 4 A schematic diagram of a simulation curve incorporating process errors of a three-dimensional trench capacitor according to a specific embodiment of the present invention; Figure 5 A schematic diagram of the process structure for modeling a compact model of a three-dimensional trench ferroelectric capacitor according to a specific embodiment of the present invention; Figure 6 A block diagram of a compact modeling apparatus for a three-dimensional trench ferroelectric capacitor provided in an embodiment of the present invention; Figure 7 This is a schematic diagram of the structure of an electronic device provided according to an embodiment of the present invention. Detailed Implementation
[0021] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.
[0022] The following describes, with reference to the accompanying drawings, a method, apparatus, and electronic device for modeling a compact three-dimensional trench ferroelectric capacitor according to an embodiment of the present invention. First, the method for modeling a compact three-dimensional trench ferroelectric capacitor according to an embodiment of the present invention will be described with reference to the accompanying drawings. First, the geometric structure data and process error data of the target three-dimensional trench capacitor are obtained. Then, independent electrical regions are divided using a preset equivalent region method. The electrical weighting factor and electric field enhancement factor of each region are determined, and a simplified model is constructed. Finally, the process error data and the pre-constructed Monte Carlo framework are combined to generate a compact three-dimensional trench ferroelectric capacitor model. This solves the problem in related technologies where the electrical performance prediction of the simulation model has a large deviation due to the lack of manufacturing process error data, improving the accuracy of electrical performance prediction and increasing computational efficiency.
[0023] Specifically, Figure 1 A flowchart illustrating a compact modeling method for a three-dimensional trench ferroelectric capacitor according to an embodiment of the present invention.
[0024] like Figure 1 As shown, the modeling method for the compact model of the three-dimensional trench ferroelectric capacitor includes the following steps: In step S101, the geometric structure data and process error data of the target three-dimensional trench capacitor are obtained.
[0025] In some embodiments, the geometric data of the target three-dimensional trench capacitor includes at least one of the following: the thickness of the ferroelectric layer, the trench depth, the roughness, the aspect ratio, and the radius of curvature at the corner.
[0026] Specifically, geometric data is the core data reflecting the physical structure, process variations, and electrical performance of three-dimensional trench capacitors. For example, the thickness of the ferroelectric layer reflects the specific dimensions of the functional layer of the three-dimensional trench capacitor, the trench depth and aspect ratio reflect the three-dimensional shape of the three-dimensional trench capacitor, the roughness reflects the local surface features of the three-dimensional trench capacitor, and the radius of curvature at the corner reflects the local deformation characteristics of the three-dimensional trench capacitor. By obtaining the geometric data of the target three-dimensional trench capacitor, the modeling process can more closely approximate the actual physical structure.
[0027] In step S102, based on the geometric structure data of the target three-dimensional trench capacitor, the target three-dimensional trench capacitor is divided into electrical regions according to the preset equivalent region method to obtain multiple independent electrical regions. The electrical weight factor and the electric field enhancement factor of each independent electrical region are determined. A simplified model of the target three-dimensional trench capacitor is constructed based on the electrical weight factor and the electric field enhancement factor of each independent electrical region.
[0028] Among them, the electrical weighting factor is a coefficient used to describe the proportion of contribution of different regions such as the bottom plate, sidewalls, and corners to the total electrical performance of the device, and the electric field enhancement factor is a correction coefficient describing the deviation of the actual electric field intensity in each region from the electric field intensity of the ideal plane.
[0029] Figure 2 This is a schematic diagram of a three-dimensional trench capacitor and its region division according to a specific embodiment of the present invention.
[0030] Furthermore, in some embodiments, the multiple independent electrical regions include a bottom plate region, a sidewall region, and a corner region. Determining the electrical weighting factor and the electric field enhancement factor of each of the multiple independent electrical regions includes: determining the electrical weighting factor of the bottom plate region, the electrical weighting factor of the target sidewall region, and the electrical weighting factor of the corner region based on the area ratio between the bottom plate region, the target sidewall region, and the corner region, and the polarization ratio between the bottom plate region, the target sidewall region, and the corner region; and determining the electric field enhancement factor of the bottom plate region, the electric field enhancement factor of the target sidewall region, and the electric field enhancement factor of the corner region based on the deviation values of the bottom plate region, the target sidewall region, and the corner region relative to the reference electric field plane, respectively.
[0031] Specifically, based on the geometric differences and electrical response consistency of the target three-dimensional trench capacitor, the overall complex structure is divided into three independent electrical regions: the bottom plate region, the side wall region, and the corner region. The area ratio of the three independent electrical regions is calculated, and the proportion of each region to the total electrical properties (i.e., polarization) of the device is determined. The electrical weighting factor of each independent electrical region is determined, and the sum of the electrical weighting factors of all independent electrical regions is 1. Then, the electric field enhancement factor of each independent electrical region is determined based on the difference between the actual electric field strength and the ideal planar electric field strength of each region.
[0032] As one possible approach, assuming the bottom plate region accounts for 20% of the electrically equivalent area, the side wall region accounts for 70%, and the corner region accounts for 10%, then the electrical weighting factor for the bottom plate region... The sidewall region electrical weighting factor is 0.2. The electrical weighting factor for the corner region is 0.7. It is 0.1, where, =1; For the electric field enhancement factor, first assume the ideal planar electric field is 1V / nm. Then, calculate the actual electric field in each region—the bottom plate region, the sidewall region, and the corner region—through simulation. For example, the simulated electric field in the bottom plate region is 1.05V / nm, the simulated electric field in the sidewall region is 1.4V / nm, and the simulated electric field in the corner region is 2.8V / nm. Therefore, the electric field enhancement factor for the bottom plate region is... The electric field enhancement factor of the sidewall region is 1.05 / 1 = 1.05. The electric field enhancement factor in the corner region is 1.4 / 1 = 1.4. The value is 2.8 / 1 = 2.8.
[0033] Further, in some embodiments, a simplified model of the target three-dimensional trench capacitor is constructed based on multiple independent electrical regions, an electrical weighting factor for each electrical region, and an electric field enhancement factor for each independent electrical region. This includes: obtaining the thickness of the ferroelectric layer in each independent electrical region; obtaining the actual effective electric field of the bottom plate region, the actual effective electric field of the target sidewall region, and the actual effective electric field of the corner region based on the thickness of the ferroelectric layer in each independent electrical region, the electric field enhancement factor of each independent electrical region, and the external voltage of each independent electrical region; obtaining the polarization value of the bottom plate region based on the actual effective electric field of the bottom plate region and the electrical weighting factor of the bottom plate region; obtaining the polarization value of the target sidewall region based on the actual effective electric field of the target sidewall region and the electrical weighting factor of the target sidewall region; obtaining the polarization value of the corner region based on the actual effective electric field of the corner region and the electrical weighting factor of the corner region; obtaining the total polarization value of the target three-dimensional trench capacitor based on the polarization value of the bottom plate region, the polarization value of the target sidewall region, and the polarization value of the corner region; and constructing a simplified model of the target three-dimensional trench capacitor based on the total polarization value of the target three-dimensional trench capacitor.
[0034] As one possible approach, assuming the ferroelectric layer thickness is... If the external voltage of each electrical region is V, then the actual effective electric field of the bottom plate region is... The actual effective electric field in the target sidewall region The actual effective electric field in the corner region Combined with the electrical weighting factor of the bottom plate region Electrical weighting factor of sidewall region Electrical weighting factor in corner regions The polarization value of the bottom plate region is obtained. Polarization value of the target sidewall region Polarization value in the corner region The corresponding total polarization value This allows us to obtain a simplified model of the target three-dimensional trench capacitor.
[0035] It should be noted that the function Corresponding to the ideal parallel-plate capacitor model, the classic NLS model with restricted switching nucleation is adopted. It is assumed that the ferroelectric HZO material is composed of a large number of ferroelectric domains, and the applied electric field on each domain is non-uniform, satisfying a specific distribution. The distribution variable is set as follows. The polarization relaxation time for each domain is: ,in, It is a macroscopic external electric field that is time-dependent. This represents the actual electric field value experienced by each electric domain. As an activation field, the flipping properties of ferroelectric domains were described. It is a time constant. The fitting parameters are given; for each electric domain, the dynamic characteristics of its polarization switching are as follows: ; in, This indicates the proportion of the domain that is positively polarized. constant Integrate the above expression: ; ; in, Indicates the previous The moment when positive and negative signs switch That is, the proportion of each domain flipping upwards as a function of time; the total upward polarization ratio. The changes over time are as follows, and the integral is performed on all domains with respect to the distribution variable: ; in For the corresponding distribution function, The total number of electric domains in ferroelectric materials; The polarization characteristics of ferroelectricity are a function of time: ; in, Corresponding to the remanent polarization intensity; the current for the ferroelectric capacitor is: .
[0036] In step S103, based on process error data and a simplified model of the target three-dimensional trench capacitor, a compact model of the three-dimensional trench ferroelectric capacitor is generated according to a pre-built Monte Carlo framework.
[0037] It should be understood that in the process of three-dimensional trench capacitor manufacturing, the process parameters such as the thickness of the ferroelectric layer, the trench depth, and the roughness will fluctuate to varying degrees. At this time, it is necessary to quantify the fluctuations (i.e., process error data) into the statistical distribution of the core model parameters based on the actual test data.
[0038] Furthermore, in some embodiments, based on process error data and a simplified model of the target three-dimensional trench capacitor, a compact model of the three-dimensional trench ferroelectric capacitor is generated according to a pre-constructed Monte Carlo framework. This includes: performing bitwise AND processing on the process error data to obtain the statistical distribution results of the process error data; generating parameter samples corresponding to each trench capacitor based on the statistical distribution results of the process error data according to the pre-constructed Monte Carlo framework; and obtaining a compact model of the three-dimensional trench ferroelectric capacitor based on the parameter samples corresponding to each trench capacitor.
[0039] As one possible implementation method, embodiments of the present invention collect measured process error data, such as obtaining the thickness of the ferroelectric layer of 1000 devices, and obtaining the roughness of 1000 devices, and obtaining the roughness of 1.0-1.4. Then, the distribution type and characteristic value of each error parameter are determined by statistical analysis. For example, the characteristic values of the thickness distribution of the ferroelectric layer of 1000 devices and the characteristic values of the roughness distribution of 1000 devices are statistically analyzed by normal distribution. Then, based on Monte Carlo random sampling, 1000 corresponding parameter samples are generated. The statistical distribution of the parameter samples is combined with the simplified model of the target three-dimensional trench capacitor to generate an engineering model, namely, a compact model of a three-dimensional trench ferroelectric capacitor.
[0040] To demonstrate the effectiveness of the compact modeling method for three-dimensional trench ferroelectric capacitors in this embodiment of the invention, the simulation curves of a traditional planar capacitor model are compared with those of a three-dimensional trench ferroelectric capacitor. Figure 3 This is a schematic diagram comparing the simulation curves of a conventional planar capacitor model and a three-dimensional trench ferroelectric capacitor according to a specific embodiment of the present invention. Figure 3 (a) is a schematic diagram of the hysteresis loop. Figure 3 (b) is a schematic diagram of the current response. Figure 4 This is a schematic diagram of a simulation curve combining the process error of a three-dimensional trench capacitor according to a specific embodiment of the present invention, such as... Figure 3 As shown, the three-dimensional trench capacitor has a weaker dynamic intensity per unit area and a lower peak dynamic current than the planar capacitor, while its total effective area is much larger than that of the planar capacitor; for example... Figure 4 As shown, the field curve can simulate the impact of process fluctuations on device performance, reflecting the dispersion and typical characteristics of device performance in actual production.
[0041] To enable those skilled in the art to better understand the compact modeling method for three-dimensional trench ferroelectric capacitors according to embodiments of the present invention, the following explanation will be provided in conjunction with specific embodiments.
[0042] Figure 5 This is a schematic diagram of the flow structure of a compact modeling method for a three-dimensional trench ferroelectric capacitor according to a specific embodiment of the present invention, as shown below. Figure 5 As shown, the process first uses geometric process distribution parameters (such as ferroelectric layer thickness, trench depth-to-width ratio, corner curvature radius, etc.) and applied voltage as input. It first quantifies the impact of process fluctuations on these parameters in actual manufacturing through a process disturbance model. Then, based on the parameters after fluctuation, it constructs a geometric structure model of the corresponding three-dimensional trench structure (clarifying the morphology of the bottom, sidewalls, corners, etc.). Subsequently, it combines the polarization model of the planar ferroelectric capacitor (as a reference for the basic electrical response) and finally outputs the polarization characteristic curve to simulate the polarization performance of the capacitor.
[0043] The compact modeling method for a three-dimensional trench ferroelectric capacitor provided by the present invention first obtains the geometric structure data and process error data of the target three-dimensional trench capacitor, then divides the independent electrical regions by a preset equivalent region method, determines the electrical weighting factor and electric field enhancement factor of each region, and constructs a simplified model, and finally combines the process error data with the pre-constructed Monte Carlo framework to generate a compact model of the three-dimensional trench ferroelectric capacitor. This solves the problem of large deviations in the electrical performance prediction of simulation models caused by the lack of manufacturing process error data in related technologies, improves the accuracy of electrical performance prediction, and increases computational efficiency.
[0044] Next, the compact modeling apparatus for a three-dimensional trench ferroelectric capacitor provided according to an embodiment of the present invention is described with reference to the accompanying drawings.
[0045] Figure 6 A block diagram of a compact modeling apparatus for a three-dimensional trench ferroelectric capacitor provided according to an embodiment of the present invention.
[0046] like Figure 6 As shown, the compact modeling device 10 for the three-dimensional trench ferroelectric capacitor includes: an acquisition module 100, a construction module 200, and a generation module 300.
[0047] The acquisition module 100 is used to acquire the geometric structure data and process error data of the target three-dimensional trench capacitor; the construction module 200 is used to divide the target three-dimensional trench capacitor into multiple independent electrical regions based on the geometric structure data of the target three-dimensional trench capacitor according to the preset equivalent region method, and determine the electrical weight factor and electric field enhancement factor of each independent electrical region, and construct a simplified model of the target three-dimensional trench capacitor based on the electrical weight factor and electric field enhancement factor of each independent electrical region; the generation module 300 is used to generate a compact model of the three-dimensional trench ferroelectric capacitor based on the process error data and the simplified model of the target three-dimensional trench capacitor, according to the pre-constructed Monte Carlo framework.
[0048] Furthermore, in some embodiments, the geometric data of the target three-dimensional trench capacitor includes at least one of the following: the thickness of the ferroelectric layer, the trench depth, the roughness, the aspect ratio, and the radius of curvature at the corner.
[0049] Furthermore, in some embodiments, the construction module 200 is specifically used to: determine the electrical weighting factor of the bottom plate region, the electrical weighting factor of the target sidewall region, and the electrical weighting factor of the corner region based on the area ratio between the bottom plate region, the target sidewall region, and the corner region, and the polarization ratio between the bottom plate region, the target sidewall region, and the corner region; and determine the electric field enhancement factor of the bottom plate region, the electric field enhancement factor of the target sidewall region, and the electric field enhancement factor of the corner region based on the deviation values of the bottom plate region, the target sidewall region, and the corner region relative to the reference electric field plane, respectively.
[0050] Furthermore, in some embodiments, the construction module 200 is also used to: obtain the thickness of the ferroelectric layer in each independent electrical region; obtain the actual effective electric field of the bottom plate region, the actual effective electric field of the target sidewall region, and the actual effective electric field of the corner region based on the thickness of the ferroelectric layer in each independent electrical region, the electric field enhancement factor of each independent electrical region, and the external voltage of each independent electrical region; obtain the polarization value of the bottom plate region based on the actual effective electric field of the bottom plate region and the electric weighting factor of the bottom plate region; obtain the polarization value of the target sidewall region based on the actual effective electric field of the target sidewall region and the electric weighting factor of the target sidewall region; obtain the polarization value of the corner region based on the actual effective electric field of the corner region and the electric weighting factor of the corner region; obtain the total polarization value of the target three-dimensional trench capacitor based on the polarization value of the bottom plate region, the polarization value of the target sidewall region, and the polarization value of the corner region, and construct a simplified model of the target three-dimensional trench capacitor based on the total polarization value of the target three-dimensional trench capacitor.
[0051] Furthermore, in some embodiments, the generation module 300 is specifically used to: process the process error data to obtain the statistical distribution results of the process error data; generate parameter samples corresponding to each trench capacitor based on the statistical distribution results of the process error data according to the pre-built Monte Carlo framework; and obtain a compact model of a three-dimensional trench ferroelectric capacitor based on the parameter samples corresponding to each trench capacitor.
[0052] It should be noted that the foregoing explanation of the modeling method embodiment for the compact model of a three-dimensional trench ferroelectric capacitor also applies to the modeling device for the compact model of a three-dimensional trench ferroelectric capacitor in this embodiment, and will not be repeated here.
[0053] The compact modeling device for a three-dimensional trench ferroelectric capacitor provided in this embodiment of the invention first acquires the geometric structure data and process error data of the target three-dimensional trench capacitor, then divides the independent electrical regions using the preset equivalent region method, determines the electrical weighting factor and electric field enhancement factor of each region, and constructs a simplified model. Finally, it combines the process error data with the pre-constructed Monte Carlo framework to generate a compact model of the three-dimensional trench ferroelectric capacitor. This solves the problem of large deviations in the electrical performance prediction of simulation models caused by the lack of manufacturing process error data in related technologies, improves the accuracy of electrical performance prediction, and increases computational efficiency.
[0054] Figure 7 This is a schematic diagram of an electronic device provided according to an embodiment of the present invention. The electronic device may include: The memory 701, the processor 702, and the computer program stored on the memory 701 and executable on the processor 702.
[0055] When the processor 702 executes the program, it implements the compact modeling method for three-dimensional trench ferroelectric capacitors provided in the above embodiments.
[0056] Furthermore, electronic devices also include: Communication interface 703 is used for communication between memory 701 and processor 702.
[0057] The memory 701 is used to store computer programs that can run on the processor 702.
[0058] The memory 701 may include high-speed RAM (Random Access Memory) memory, and may also include non-volatile memory, such as at least one disk storage.
[0059] If the memory 701, processor 702, and communication interface 703 are implemented independently, then the communication interface 703, memory 701, and processor 702 can be interconnected via a bus to complete communication between them. The bus can be an ISA (Industry Standard Architecture) bus, a PCI (Peripheral Component Interconnect) bus, or an EISA (Extended Industry Standard Architecture) bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 7 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.
[0060] Optionally, in a specific implementation, if the memory 701, processor 702, and communication interface 703 are integrated on a single chip, then the memory 701, processor 702, and communication interface 703 can communicate with each other through an internal interface.
[0061] The processor 702 may be a CPU (Central Processing Unit), an ASIC (Application Specific Integrated Circuit), or one or more integrated circuits configured to implement embodiments of the present invention.
[0062] In addition, embodiments of the present invention also provide a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the above-described method for modeling a compact three-dimensional trench ferroelectric capacitor.
[0063] In addition, embodiments of the present invention also provide a computer program product, including a computer program, which is executed to implement the above-described method for modeling a compact three-dimensional trench ferroelectric capacitor.
[0064] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0065] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0066] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.
Claims
1. A method for modeling a compact three-dimensional trench ferroelectric capacitor, characterized in that, Includes the following steps: Obtain the geometric structure data and process error data of the target three-dimensional trench capacitor; Based on the geometric structure data of the target three-dimensional trench capacitor, the target three-dimensional trench capacitor is divided into electrical regions according to the preset equivalent region method to obtain multiple independent electrical regions. The electrical weight factor and the electric field enhancement factor of each independent electrical region are determined. A simplified model of the target three-dimensional trench capacitor is constructed based on the electrical weight factor and the electric field enhancement factor of each independent electrical region. Based on the process error data and the simplified model of the target three-dimensional trench capacitor, a compact model of the three-dimensional trench ferroelectric capacitor is generated according to the pre-constructed Monte Carlo framework.
2. The method according to claim 1, characterized in that, The geometric data of the target three-dimensional trench capacitor includes at least one of the following: the thickness of the ferroelectric layer, the trench depth, the roughness, the aspect ratio, and the radius of curvature at the corner.
3. The method according to claim 1, characterized in that, The plurality of independent electrical regions include a bottom plate region, a sidewall region, and a corner region. Determining the electrical weighting factor and the electric field enhancement factor for each of the plurality of independent electrical regions includes: Based on the area ratio between the bottom plate region, the target sidewall region, and the corner region, and the polarization ratio between the bottom plate region, the target sidewall region, and the corner region, the electrical weighting factor of the bottom plate region, the electrical weighting factor of the target sidewall region, and the electrical weighting factor of the corner region are determined. The electric field enhancement factor of the bottom plate region, the electric field enhancement factor of the target sidewall region, and the electric field enhancement factor of the corner region are determined based on the deviation values of the bottom plate region, the target sidewall region, and the corner region relative to the reference electric field plane, respectively.
4. The method according to claim 2, characterized in that, The simplified model for constructing the target three-dimensional trench capacitance based on the plurality of independent electrical regions, the electrical weighting factor of each electrical region, and the electric field enhancement factor of each independent electrical region includes: Obtain the thickness of the ferroelectric layer in each of the independent electrical regions; Based on the thickness of the ferroelectric layer in each independent electrical region, the electric field enhancement factor in each independent electrical region, and the external voltage in each independent electrical region, the actual effective electric field of the bottom plate region, the actual effective electric field of the target sidewall region, and the actual effective electric field of the corner region are obtained. The polarization value of the bottom plate region is obtained based on the actual effective electric field of the bottom plate region and the electric weighting factor of the bottom plate region; the polarization value of the target sidewall region is obtained based on the actual effective electric field of the target sidewall region and the electric weighting factor of the target sidewall region; the polarization value of the corner region is obtained based on the actual effective electric field of the corner region and the electric weighting factor of the corner region. The total polarization value of the target three-dimensional trench capacitor is obtained based on the polarization values of the bottom plate region, the target sidewall region, and the corner region, and a simplified model of the target three-dimensional trench capacitor is constructed based on the total polarization value of the target three-dimensional trench capacitor.
5. The method according to claim 1, characterized in that, The simplified model based on the process error data and the target three-dimensional trench capacitor, according to a pre-built Monte Carlo framework, generates a compact model of the three-dimensional trench ferroelectric capacitor, including: The process error data is processed to obtain the statistical distribution results of the process error data; Based on the pre-built Monte Carlo framework, parameter samples corresponding to each trench capacitor are generated according to the statistical distribution results of the process error data. Based on the parameter samples corresponding to each trench capacitor, a compact model of the three-dimensional trench ferroelectric capacitor is obtained.
6. A compact modeling device for a three-dimensional trench ferroelectric capacitor, characterized in that, include: The acquisition module is used to acquire the geometric structure data and process error data of the target three-dimensional trench capacitor; A construction module is used to divide the target three-dimensional trench capacitor into multiple independent electrical regions based on the geometric structure data of the target three-dimensional trench capacitor according to a preset equivalent region method, and to determine the electrical weight factor and electric field enhancement factor of each independent electrical region. A simplified model of the target three-dimensional trench capacitor is constructed based on the electrical weight factor and electric field enhancement factor of each independent electrical region. The generation module is used to generate a compact model of the three-dimensional trench ferroelectric capacitor based on the process error data and the simplified model of the target three-dimensional trench capacitor, according to a pre-built Monte Carlo framework.
7. The apparatus according to claim 6, characterized in that, The geometric data of the target three-dimensional trench capacitor includes at least one of the following: the thickness of the ferroelectric layer, the trench depth, the roughness, the aspect ratio, and the radius of curvature at the corner.
8. An electronic device, characterized in that, include: A memory, a processor, and a computer program stored in the memory and executable on the processor, the processor executing the program to implement the compact modeling method for a three-dimensional trench ferroelectric capacitor as described in any one of claims 1-5.
9. A computer-readable storage medium having a computer program stored thereon, characterized in that, The program is executed by the processor to implement the compact modeling method for three-dimensional trench ferroelectric capacitors as described in any one of claims 1-5.
10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the compact modeling method for three-dimensional trench ferroelectric capacitors as described in any one of claims 1-5.