Manufacturing method and application of quantum photovoltaic cell panel

Abstract

The invention relates to the technical field of new energy photovoltaic cell panels, in particular to a manufacturing method of a quantum photovoltaic cell panel, which comprises the following steps: S1, preparing core / shell structure colloidal quantum dot ink with uniform size and surface defect density less than or equal to 1 * 10cm; an improved continuous fluid chemical synthesis process is adopted, nuclear phase synthesis and shell layer coating are completed through a double-reaction-cavity serial connection structure, agglomeration is inhibited in cooperation with a surface modifier, the size uniformity of the quantum dots is remarkably improved (the size deviation is smaller than or equal to 3%), and the quantum dots are uniform in size. The surface defect density is controlled to be less than or equal to 1 * 10cm, and compared with traditional batch synthesis, the yield is greatly improved, and the unit cost is reduced; and by matching with a roll-to-roll (R2R) continuous deposition process, large-area continuous preparation of each functional layer is realized, the defects of pinholes, cracks and the like in a traditional coating process are avoided, the consistency of the device is improved, and a foundation is laid for industrial mass production.

Description

Technical Field

[0001] This invention relates to the field of new energy photovoltaic panel technology, specifically to a manufacturing method and application of quantum photovoltaic panels. Background Technology

[0002] Quantum photovoltaic panels are a new type of photovoltaic panel that converts solar energy into electrical energy based on quantum effects. They mainly include quantum dot solar panels and panels based on organic quantum materials.

[0003] Existing quantum dot synthesis methods are mostly batch-based, resulting in low yields, high costs, poor quantum dot size uniformity (size deviation > 10%), numerous surface defects, and high charge recombination rates. Functional layer deposition is difficult to achieve large-area continuous production, and traditional coating processes are prone to defects such as pinholes and cracks, affecting device consistency. Ligand exchange and passivation processes are performed separately, which is complex and has limited passivation effect. Quantum dot films are easily oxidized and have poor stability in air environments. Encapsulation technology is imperfect, with insufficient water and oxygen barrier performance (water permeability > 1 × 10⁻³ g / m²・day), leading to severe efficiency degradation of solar panels after long-term operation (> 5000 h). In addition, existing quantum dot solar panels still lack synergistic optimization in terms of flexibility and low-light response performance, making it difficult to meet the application needs of emerging fields such as flexible electronics and indoor IoT.

[0004] To address the above technical challenges, we have designed a manufacturing method for quantum photovoltaic panels and their applications. Summary of the Invention

[0005] The purpose of this invention is to provide a manufacturing method for quantum photovoltaic panels and their applications, which has the advantages of large-scale production, high performance, and high stability, and solves the problems of complex manufacturing processes, high costs, poor flexibility, insufficient environmental stability, and poor performance under low light conditions in existing photovoltaic panels.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a method for manufacturing a quantum photovoltaic panel, comprising the following steps: S1: Quantum dot ink preparation: An improved continuous fluid chemical synthesis process was used to prepare quantum dot inks with uniform size and surface defect density ≤1×10¹. 6 Core / shell structured colloidal quantum dot ink with a density of cm⁻³; S2: Substrate pretreatment: Plasma cleaning and surface modification are performed on the flexible substrate to improve the interfacial bonding between the substrate and the functional layer. S3: Roll-to-roll continuous deposition: A transparent conductive electrode layer, an electron transport layer, a quantum dot light-absorbing layer, a hole transport layer and a back electrode layer are sequentially deposited on a pre-treated flexible substrate using an R2R process. S4: Online composite treatment: After the quantum dot light-absorbing layer is deposited, online rapid ligand exchange treatment and inorganic-organic composite passivation treatment are performed sequentially. S5: Gradient Packaging: The deposited solar panel is packaged using a multi-layer gradient barrier packaging process to obtain the finished quantum dot photovoltaic solar panel.

[0007] Preferably, in step S1, the core / shell structure quantum dot is one of PbS / CdS, PbSe / CdS, or InP / ZnS, with a quantum dot size of 2-10 nm and a shell thickness of 0.5-2 nm.

[0008] Preferably, in step S1, the improved continuous fluid chemical synthesis process adopts a dual-reaction-cavity series structure, with the first reaction chamber performing nucleus-phase synthesis and the second reaction chamber performing shell coating. The reaction temperature is controlled at 80-150℃, and the reaction time is 30-120 min. Surface modifiers are added during the synthesis process to inhibit quantum dot aggregation.

[0009] Preferably, in step S2, the flexible substrate is one of PET, PI or stainless steel foil, the substrate thickness is 25-100μm, the plasma cleaning power is 50-200W, the processing time is 1-5min, and the surface modification is performed by coating with a silane coupling agent.

[0010] Preferably, in step S3, the transparent conductive electrode layer is one of ITO, FTO, or AZO, deposited by magnetron sputtering or sol-gel method, with a thickness of 50-200 nm; the electron transport layer is one of TiO2, ZnO, or SnO2, deposited by slot coating or inkjet printing, with a thickness of 20-80 nm; the hole transport layer is one of Spiro-OMeTAD, PTAA, or CuI, with a thickness of 30-100 nm; and the back electrode is one of Ag, Al, or Au, deposited by thermal evaporation or electron beam evaporation, with a thickness of 100-500 nm.

[0011] Preferably, in step S4, the online rapid ligand exchange treatment uses short-chain halide ligands, which are one of butylammonium iodide, hexylammonium bromide, or octylammonium chloride. The ligand exchange temperature is 25-60℃, and the treatment time is 30-120s. The inorganic-organic composite passivation treatment uses a combination of gas-phase Al2O3 deposition and polymer coating. The Al2O3 deposition thickness is 5-20nm, and the polymer coating is polyvinylidene fluoride or polyimide with a thickness of 10-30nm.

[0012] Preferably, in step S5, the multilayer gradient barrier encapsulation process includes a first barrier layer, a buffer layer, a second barrier layer, and an outer protective layer stacked sequentially. The first barrier layer is an Al2O3 or SiO2 coating with a thickness of 10-30 nm; the buffer layer is polyurethane or epoxy resin with a thickness of 50-200 nm; the second barrier layer is aluminum-plated PET or silicon-plated PP with a thickness of 25-75 μm; and the outer protective layer is UV-resistant PET or polycarbonate with a thickness of 50-150 μm. The encapsulation adopts a hot-press composite process with a temperature of 80-120℃ and a pressure of 0.5-2 MPa.

[0013] The application of quantum photovoltaic panels: Finished quantum dot photovoltaic panels leverage the core advantages of flexibility (bending radius ≤ 5cm), excellent low-light response (efficiency ≥ 8% under indoor lighting), and strong environmental stability (stable operation from -30℃ to 60℃). Through customized design and integrated applications: In the field of flexible wearables, they are cut into thin sheet structures suitable for smart bracelets and health monitoring patches, composited into device shells or straps, and powered by indoor LED lights and fluorescent lamps, reducing the charging frequency of traditional lithium batteries; in the field of building integrated circuits, they are processed into transparent components with a light transmittance of 30%-70%, spliced ​​into curtain walls and roofing membranes, generating electricity while simultaneously providing natural light for the building. It can withstand harsh environments such as wind, rain, and humidity; in the field of indoor IoT, it is designed as a miniaturized component, and its low weight characteristics are suitable for the concealed installation of sensors, providing long-lasting power for temperature and humidity monitoring and wireless communication nodes; in the field of portable charging, it is integrated with folding brackets and energy storage batteries, and its volume is reduced to 1 / 5-1 / 3 after folding. It can collect light energy both indoors and outdoors to power mobile phones and action cameras; in the field of mobile energy, it is made into 10-20m long flexible rolls or modular components, which can be quickly laid in outdoor work sites, fixed to electric bicycles or emergency shelters, and combined with inverters to provide 220V AC power supply to meet the power needs of exploration equipment, emergency lighting and other applications.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: 1. Achieve large-scale, efficient production and reduce manufacturing costs: An improved continuous fluid chemical synthesis process is adopted, in which the nucleus phase synthesis and shell coating are completed separately through a dual-reaction-cavity tandem structure. Combined with surface modifiers to suppress agglomeration, this significantly improves the uniformity of quantum dot size (size deviation ≤3%) and controls the surface defect density to ≤1×10¹. 6 cm⁻³ significantly increases yield and reduces unit cost compared to traditional batch synthesis; combined with roll-to-roll (R2R) continuous deposition process, it enables large-area continuous fabrication of each functional layer, avoiding defects such as pinholes and cracks in traditional coating processes, improving device consistency, and laying the foundation for industrial mass production.

[0015] 2. Optimize battery photoelectric performance and broaden application adaptability: The precise design of the core / shell structure quantum dots (PbS / CdS, PbSe / CdS, etc.) in terms of size (2-10nm) and shell thickness (0.5-2nm), combined with online rapid ligand exchange (short-chain halide ligands) and inorganic-organic composite passivation treatment, reduces charge recombination rate and improves light absorption efficiency and carrier transport performance. This allows the battery to maintain a conversion efficiency of ≥8% even in low-light environments, making it perfectly suitable for low-light scenarios such as indoor IoT and wearable devices. The combination of flexible substrates (PET, PI, etc.) and R2R process gives the battery bendable characteristics (bending radius ≤5cm), meeting the installation requirements of the flexible electronics field.

[0016] 3. Enhanced environmental stability and extended service life: The multi-layer gradient barrier encapsulation process, through the synergistic effect of Al2O3 / SiO2 coating, buffer layer, aluminum-plated PET / silicon-plated PP barrier layer and anti-UV protective layer, significantly reduces water permeability (far lower than the existing technology's 1×10⁻³g / m²・day), effectively blocking water and oxygen erosion; combined with the composite passivation treatment of quantum dot film, the battery can operate stably in a wide temperature range of -30℃ to 60℃, and the efficiency decay rate is significantly reduced after long-term operation (>5000h), solving the pain points of traditional quantum dot batteries such as easy oxidation and poor stability.

[0017] 4. Enhance structural adaptability and expand applications in multiple fields: Solar panels can be customized to achieve diverse forms, such as thin sheet structures in the wearable field, transparent components for building integration (transmittance 30%-70%), miniaturized components in the Internet of Things (IoT) field, foldable structures for portable charging (volume reduced to 1 / 5-1 / 3 after folding), and long flexible roll materials (10-20m) in the mobile energy field. They take into account both power generation function and scenario adaptability, covering multiple emerging fields such as flexible wearables, building integration, indoor IoT, portable charging, and mobile energy, and meet the personalized power needs of different scenarios. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of the quantum photovoltaic panel of the present invention; Figure 2 This is a schematic diagram of the manufacturing process of the present invention. Detailed Implementation

[0019] Please see Figures 1-2 The manufacturing method of quantum photovoltaic panels includes the following steps: S1: Quantum dot ink preparation: An improved continuous fluid chemical synthesis process was used to prepare quantum dot inks with uniform size and surface defect density ≤1×10¹. 6 Core / shell structured colloidal quantum dot ink with a density of cm⁻³; S2: Substrate pretreatment: Plasma cleaning and surface modification are performed on the flexible substrate to improve the interfacial bonding between the substrate and the functional layer. S3: Roll-to-roll continuous deposition: A transparent conductive electrode layer, an electron transport layer, a quantum dot light-absorbing layer, a hole transport layer and a back electrode layer are sequentially deposited on a pre-treated flexible substrate using an R2R process. S4: Online composite treatment: After the quantum dot light-absorbing layer is deposited, online rapid ligand exchange treatment and inorganic-organic composite passivation treatment are performed sequentially. S5: Gradient Packaging: The deposited solar panel is packaged using a multi-layer gradient barrier packaging process to obtain the finished quantum dot photovoltaic solar panel.

[0020] In step S1, the core / shell structure quantum dot is one of PbS / CdS, PbSe / CdS or InP / ZnS, the quantum dot size is 2-10 nm, and the shell thickness is 0.5-2 nm.

[0021] In step S1, the improved continuous fluid chemical synthesis process adopts a dual-reaction-cavity tandem structure. The first reaction chamber is used for nucleus-phase synthesis, and the second reaction chamber is used for shell coating. The reaction temperature is controlled at 80-150℃, and the reaction time is 30-120 min. Surface modifiers are added during the synthesis process to inhibit quantum dot aggregation.

[0022] In step S2, the flexible substrate is one of PET, PI or stainless steel foil, the substrate thickness is 25-100μm, the plasma cleaning power is 50-200W, the processing time is 1-5min, and the surface modification is performed by coating with silane coupling agent.

[0023] In step S3, the transparent conductive electrode layer is one of ITO, FTO, or AZO, deposited by magnetron sputtering or sol-gel method, with a thickness of 50-200 nm; the electron transport layer is one of TiO2, ZnO, or SnO2, deposited by slot coating or inkjet printing, with a thickness of 20-80 nm; the hole transport layer is one of Spiro-OMeTAD, PTAA, or CuI, with a thickness of 30-100 nm; and the back electrode is one of Ag, Al, or Au, deposited by thermal evaporation or electron beam evaporation, with a thickness of 100-500 nm.

[0024] In step S4, the online rapid ligand exchange treatment uses short-chain halide ligands, which are one of butylammonium iodide, hexylammonium bromide, or octylammonium chloride. The ligand exchange temperature is 25-60℃, and the treatment time is 30-120s. The inorganic-organic composite passivation treatment uses a combination of gas-phase Al2O3 deposition and polymer coating. The Al2O3 deposition thickness is 5-20nm, and the polymer coating is polyvinylidene fluoride or polyimide with a thickness of 10-30nm.

[0025] In step S5, the multilayer gradient barrier encapsulation process includes a first barrier layer, a buffer layer, a second barrier layer, and an outer protective layer stacked sequentially. The first barrier layer is an Al2O3 or SiO2 coating with a thickness of 10-30 nm; the buffer layer is polyurethane or epoxy resin with a thickness of 50-200 nm; the second barrier layer is aluminum-plated PET or silicon-plated PP with a thickness of 25-75 μm; and the outer protective layer is UV-resistant PET or polycarbonate with a thickness of 50-150 μm. The encapsulation adopts a hot-press composite process with a temperature of 80-120℃ and a pressure of 0.5-2 MPa.

[0026] The application of quantum photovoltaic panels: Finished quantum dot photovoltaic panels leverage the core advantages of flexibility (bending radius ≤ 5cm), excellent low-light response (efficiency ≥ 8% under indoor lighting), and strong environmental stability (stable operation from -30℃ to 60℃). Through customized design and integrated applications: In the field of flexible wearables, they are cut into thin sheet structures suitable for smart bracelets and health monitoring patches, composited into device shells or straps, and powered by indoor LED lights and fluorescent lamps, reducing the charging frequency of traditional lithium batteries; in the field of building integrated circuits, they are processed into transparent components with a light transmittance of 30%-70%, spliced ​​into curtain walls and roofing membranes, generating electricity while simultaneously providing natural light for the building. It can withstand harsh environments such as wind, rain, and humidity; in the field of indoor IoT, it is designed as a miniaturized component, and its low weight characteristics are suitable for the concealed installation of sensors, providing long-lasting power for temperature and humidity monitoring and wireless communication nodes; in the field of portable charging, it is integrated with folding brackets and energy storage batteries, and its volume is reduced to 1 / 5-1 / 3 after folding. It can collect light energy both indoors and outdoors to power mobile phones and action cameras; in the field of mobile energy, it is made into 10-20m long flexible rolls or modular components, which can be quickly laid in outdoor work sites, fixed to electric bicycles or emergency shelters, and combined with inverters to provide 220V AC power supply to meet the power needs of exploration equipment, emergency lighting and other applications. Example

[0027] S1: Quantum Dot Ink Preparation: A dual-reaction-chamber continuous fluid chemical synthesis apparatus was used. 0.05 mol / L lead nitrate ethanol solution and 0.1 mol / L thiourea ethanol solution were added to the first reaction chamber. The reaction temperature was set at 100℃ and the reaction time at 40 min to complete the synthesis of PbS quantum dot cores. The PbS quantum dot solution was then introduced into the second reaction chamber, where 0.03 mol / L cadmium chloride ethanol solution and 0.06 mol / L thiourea ethanol solution were added. The reaction temperature was adjusted to 120℃ and the reaction time at 60 min to form PbS / CdS core / shell structured quantum dots. 0.01 mol / L polyethylene glycol (molecular weight 2000) was added as a surface modifier. After stirring for 30 min, the mixture was filtered to obtain the quantum dot ink. Dynamic light scattering analysis showed that the quantum dot size was 5 nm, the size deviation was 3%, and the surface defect density was 8 × 10¹. 5 cm⁻³.

[0028] S2: Substrate pretreatment: Select a PET flexible substrate with a thickness of 50μm and treat it with a plasma cleaner (power 100W, argon flow rate 10sccm) for 3min; then immerse the substrate in 0.02mol / L 3-aminopropyltriethoxysilane ethanol solution at room temperature for 10min, and then dry it in an 80℃ forced-air drying oven for 5min to complete the surface modification.

[0029] S3: Roll-to-roll continuous deposition: The R2R production line speed was set to 1 m / min. An 80 nm thick ITO transparent conductive electrode layer was deposited on the pretreated substrate using magnetron sputtering (120 W power, argon atmosphere). A 40 nm thick ZnO electron transport layer was coated using slot coating, and then dried at 110 °C for 8 min. A 120 nm thick light-absorbing layer of PbS / CdS quantum dot ink was deposited using inkjet printing (300 dpi resolution). A 50 nm thick PTAA hole transport layer was coated using spin coating (2800 rpm), and then annealed at 75 °C for 4 min. Finally, an electron beam evaporation process was used (evaporation rate 0.08 nm / s, vacuum degree 1 × 10⁻⁻⁻⁻⁶). 4 A 250 nm thick Ag back electrode was deposited (Pa).

[0030] S4: In-line composite processing: The substrate with the deposited light-absorbing layer is sent to the in-line processing unit. First, ligand exchange is performed using a 0.08 mol / L butylammonium iodide isopropanol solution (temperature 35℃, time 50s). Then, it enters the ALD equipment and an 8 nm thick Al2O3 passivation layer is deposited using trimethylaluminum and water as precursors (cycles 40). Finally, a 15 nm thick polyvinylidene fluoride polymer layer is coated by a slot coating process and dried at 95℃ for 6 min.

[0031] S5: Gradient Packaging: A 15nm thick Al2O3 first barrier layer is deposited on the surface of the solar panel using the ALD process; an 80nm thick polyurethane buffer layer is coated using a roll coating process and cured at 85℃ for 12min; a 40μm thick aluminized PET second barrier layer is hot-pressed at 0.8MPa pressure and 95℃; finally, an 80μm thick UV-resistant PET outer protective layer is bonded with epoxy resin and cured at 75℃ for 18min; after curing, the solar panel module for wearable devices is laser-cut according to the size of a smart bracelet strap (20mm×150mm).

[0032] The performance of this component was tested, and the test data is shown in the table below: Example

[0033] S1: Quantum Dot Ink Preparation: The parameters of the dual-reaction-chamber continuous fluid chemical synthesis were adjusted. In the first reaction chamber, the PbS core synthesis temperature was controlled at 90℃, and the reaction time was 35 min to prepare a 3 nm thick PbS quantum dot core. In the second reaction chamber, the CdS shell coating temperature was controlled at 110℃, and the reaction time was 50 min to form a 0.8 nm thick CdS shell. 0.008 mol / L mercaptoacetic acid was added as a surface modifier to prepare a low-concentration ink with a quantum dot concentration of 0.01 mol / L. Tests showed a quantum dot size deviation of 2.5% and a surface defect density of 7 × 10¹. 5 cm⁻³.

[0034] S2: Substrate pretreatment: Select a transparent PI substrate with a thickness of 100μm, and treat it with a plasma cleaner (power 150W, argon flow rate 15sccm) for 4min; then coat it with 0.02mol / L 3-aminopropyltriethoxysilane solution and dry it at 80℃ for 5min.

[0035] S3: Roll-to-roll continuous deposition: The R2R production line speed is set to 0.8 m / min. A 150 nm thick AZO transparent conductive electrode layer is deposited using magnetron sputtering. A 30 nm thick ZnO electron transport layer is coated using slot coating and dried at 105 °C for 7 min. A low-concentration quantum dot inkjet prints an 80 nm thick light-absorbing layer (300 dpi resolution). A 45 nm thick PTAA hole transport layer is spin-coated (2500 rpm, annealed at 70 °C for 5 min). A 200 nm thick Ag back electrode is deposited by electron beam evaporation (evaporation rate 0.07 nm / s, vacuum degree 1 × 10⁻⁻⁻⁻⁶). 4 Pa).

[0036] S4: Online composite treatment: Ligand exchange was performed using 0.09 mol / L hexylammonium bromide ethanol solution (temperature 40℃, time 55s); ALD deposition of a 10 nm thick Al2O3 passivation layer (cycles 45); slit coating of an 18 nm thick polyimide polymer layer was performed and dried at 100℃ for 7 min.

[0037] S5: Gradient encapsulation: ALD deposition of a 25nm thick transparent SiO2 first barrier layer; roll coating of a 100nm thick epoxy resin buffer layer, cured at 90℃ for 15min; hot-pressing composite of a 50μm thick transparent silicon-plated PET second barrier layer (temperature 100℃, pressure 1MPa); bonding of a 100μm thick transparent polycarbonate outer protective layer, cured at 80℃ for 20min; finally cut to a standard size of 1m×1.2m to obtain a transparent photovoltaic panel module for BIPV.

[0038] The performance of this component was tested, and the test data is shown in the table below: Example

[0039] S1: Quantum dot ink preparation: A dual-reaction-chamber series device was used. The first reaction chamber synthesized 4 nm thick PbSe quantum dot cores (reaction temperature 95℃, time 38 min); the second reaction chamber coated a 1 nm thick CdS shell (reaction temperature 115℃, time 55 min); 0.009 mol / L polyethylene glycol (molecular weight 1500) was added to prepare the quantum dot ink; tests showed a quantum dot size deviation of 3% and a surface defect density of 9 × 10¹. 5 cm⁻³.

[0040] S2: Substrate pretreatment: Select an ultra-thin PET substrate with a thickness of 30μm, plasma clean it (power 80W, time 2min), coat it with 0.018mol / L silane coupling agent solution, and dry it at 75℃ for 4min.

[0041] S3: Roll-to-roll continuous deposition: R2R production line speed 1.2m / min, magnetron sputtering of 60nm thick ITO electrode layer; slit coating of 25nm thick TiO2 electron transport layer; inkjet printing of 100nm thick PbSe / CdS quantum dot light-absorbing layer; spin-coating of 35nm thick CuI hole transport layer; thermal evaporation deposition of 150nm thick Al back electrode.

[0042] S4: Online composite treatment: 0.07 mol / L octylammonium chloride ligand exchange (temperature 30℃, time 45s); ALD deposition of a 7 nm thick Al2O3 passivation layer; coating of a 12 nm thick polyvinylidene fluoride layer.

[0043] S5: Gradient packaging: 12nm thick Al2O3 barrier layer + 60nm thick polyurethane buffer layer + 30μm thick aluminized PET + 60μm thick UV resistant PET; cut to 5cm×5cm size to obtain components for IoT devices.

[0044] The performance of this component was tested, and the test data is shown in the table below:

[0045] Performance index test conditions test results Photovoltaic conversion efficiency of indoor fluorescent lamp (300 lux): 8.2% The overall areal density of the module was tested at 85 g / m². Cyclic stability (efficiency decay rate): 4% after 3000 hours of continuous operation in an indoor environment. The adaptable indoor temperature and humidity sensor is powered by a battery that does not require replacement and provides up to 12 months of continuous operation. In summary, the manufacturing method and application of this quantum photovoltaic panel, through the combination of the above methods, solves the problems of complex manufacturing processes, high costs, poor flexibility, insufficient environmental stability, and poor performance under low light conditions in existing photovoltaic panels.

Claims

1. A method for manufacturing a quantum photovoltaic panel, characterized in that, Includes the following steps: S1: Quantum dot ink preparation: An improved continuous fluid chemical synthesis process was used to prepare quantum dot inks with uniform size and surface defect density ≤1×10¹. 6 Core / shell structured colloidal quantum dot ink with a density of cm⁻³; S2: Substrate pretreatment: Plasma cleaning and surface modification are performed on the flexible substrate to improve the interfacial bonding between the substrate and the functional layer. S3: Roll-to-roll continuous deposition: A transparent conductive electrode layer, an electron transport layer, a quantum dot light-absorbing layer, a hole transport layer and a back electrode layer are sequentially deposited on a pre-treated flexible substrate using an R2R process. S4: Online composite treatment: After the quantum dot light-absorbing layer is deposited, online rapid ligand exchange treatment and inorganic-organic composite passivation treatment are performed sequentially. S5: Gradient Packaging: The deposited solar panel is packaged using a multi-layer gradient barrier packaging process to obtain the finished quantum dot photovoltaic solar panel.

2. The method for manufacturing a quantum photovoltaic panel according to claim 1, characterized in that: In step S1, the core / shell structure quantum dot is one of PbS / CdS, PbSe / CdS or InP / ZnS, the quantum dot size is 2-10nm, and the shell thickness is 0.5-2nm.

3. The method for manufacturing a quantum photovoltaic panel according to claim 1, characterized in that: In step S1, the improved continuous fluid chemical synthesis process adopts a dual-reaction-cavity series structure. The first reaction chamber is used for nucleus-phase synthesis, and the second reaction chamber is used for shell coating. The reaction temperature is controlled at 80-150℃, and the reaction time is 30-120 min. Surface modifiers are added during the synthesis process to inhibit quantum dot aggregation.

4. The method for manufacturing a quantum photovoltaic panel according to claim 1, characterized in that: In step S2, the flexible substrate is one of PET, PI or stainless steel foil, the substrate thickness is 25-100μm, the plasma cleaning power is 50-200W, the processing time is 1-5min, and the surface modification is performed by coating with a silane coupling agent.

5. The method for manufacturing a quantum photovoltaic panel according to claim 1, characterized in that: In step S3, the transparent conductive electrode layer is one of ITO, FTO, or AZO, deposited by magnetron sputtering or sol-gel method, with a thickness of 50-200 nm; the electron transport layer is one of TiO2, ZnO, or SnO2, deposited by slot coating or inkjet printing, with a thickness of 20-80 nm; the hole transport layer is one of Spiro-OMeTAD, PTAA, or CuI, with a thickness of 30-100 nm; and the back electrode is one of Ag, Al, or Au, deposited by thermal evaporation or electron beam evaporation, with a thickness of 100-500 nm.

6. The method for manufacturing a quantum photovoltaic panel according to claim 1, characterized in that: In step S4, the online rapid ligand exchange treatment uses short-chain halide ligands, which are one of butylammonium iodide, hexylammonium bromide, or octylammonium chloride. The ligand exchange temperature is 25-60℃, and the treatment time is 30-120s. The inorganic-organic composite passivation treatment uses a combination of gas phase Al2O3 deposition and polymer coating. The Al2O3 deposition thickness is 5-20nm, and the polymer coating is polyvinylidene fluoride or polyimide with a thickness of 10-30nm.

7. The method for manufacturing a quantum photovoltaic panel according to claim 1, characterized in that: In step S5, the multilayer gradient barrier encapsulation process includes a first barrier layer, a buffer layer, a second barrier layer, and an outer protective layer stacked sequentially. The first barrier layer is an Al2O3 or SiO2 coating with a thickness of 10-30 nm; the buffer layer is polyurethane or epoxy resin with a thickness of 50-200 nm; the second barrier layer is aluminum-plated PET or silicon-plated PP with a thickness of 25-75 μm; and the outer protective layer is UV-resistant PET or polycarbonate with a thickness of 50-150 μm. The encapsulation adopts a hot-press composite process with a temperature of 80-120℃ and a pressure of 0.5-2 MPa.

8. The application of quantum photovoltaic panels, using the steps and methods described in claim 1, characterized in that: The finished quantum dot photovoltaic panels are based on the core advantages of flexibility (bending radius ≤5cm), excellent low light response (efficiency ≥8% under indoor lighting), and strong environmental stability (stable operation at -30℃-60℃). Through customized design and integrated applications: In the field of flexible wearables, they are cut into thin sheet structures suitable for smart bracelets and health monitoring patches, composited into device shells or watch straps, and powered by indoor LED lights and fluorescent lamps, reducing the charging frequency of traditional lithium batteries; in the field of building-integrated photovoltaics, they are processed into transparent components with a light transmittance of 30%-70%, spliced ​​into curtain walls and roof rolls, generating electricity while also ensuring building lighting, and can withstand harsh environments such as wind, rain, and humidity; in the field of indoor IoT, they are designed as miniaturized components, with low weight characteristics suitable for concealed sensor installation, providing long-lasting power for temperature and humidity monitoring and wireless communication nodes. In the field of portable charging, it can be integrated with folding brackets and energy storage batteries, and its volume can be reduced to 1 / 5-1 / 3 after folding. It can collect light energy both indoors and outdoors to power mobile phones and action cameras. In the field of mobile energy, it can be made into flexible rolls or modular components with a length of 10-20m, which can be quickly laid in outdoor work sites, fixed to electric bicycles or emergency shelters, and combined with inverters to provide 220V AC power supply to meet the power needs of exploration equipment, emergency lighting and other applications.

Images