PECVD (Plasma Enhanced Chemical Vapor Deposition) carrying platform, PECVD equipment and

Abstract

The invention discloses a PECVD (Plasma Enhanced Chemical Vapor Deposition) carrying platform, PECVD equipment and a PECVD carrying platform design method, the PECVD carrying platform comprises a carrying platform body, the surface of the carrying platform body is provided with a plurality of placing grooves, and the placing grooves have at least two different sizes and are used for placing wafers with different sizes. According to the PECVD platform deck provided by the invention, at least two wafers with different sizes can be placed, so that the platform deck does not need to be switched when the wafers with different sizes are subjected to film deposition processing, and thus the processing efficiency and the utilization rate of a PECVD machine are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wafer processing equipment, in particular to a PECVD (Plasma Enhanced Chemical Vapor Deposition) platform and a PECVD device, and further relates to a design method of the PECVD platform. BACKGROUND

[0002] The PECVD (Plasma Enhanced Chemical Vapor Deposition) technology is a semiconductor thin film material preparation and other material thin film preparation method in which a chemical reaction is carried out on a substrate after a deposition chamber is ionized by means of glow discharge. The PECVD technology enhances the activity of chemical vapor reaction substances by means of plasma activation, improves the surface reaction rate, and significantly reduces the thin film deposition temperature by means of high-energy ions. In the PECVD process, high-speed electrons in the plasma collide with neutral reaction gas molecules, which makes the neutral reaction gas molecules become fragments or be in an activated state to easily react. A good SiOx or SiNx thin film can be obtained when the substrate temperature is maintained at about 350℃, which can be used as the last passivation protective layer of an integrated circuit to improve the reliability of the integrated circuit.

[0003] The PECVD can deposit various thin films. The PECVD devices with a diameter of less than 8 inches are mainly used for the deposition of SiO2 or SiNx thin films of substrates such as LED products.

[0004] At present, the heater of the PECVD device is fixedly installed in the machine table. When the wafer is processed, the wafer to be processed is placed on the platform in the machine table, the platform is placed on the heater for processing. After the processing is completed, the wafer is taken out from the platform. The existing platform can usually only correspond to one size of wafer. For example, when a 4-inch wafer SiO2 deposition is performed, the machine table needs to use a 4-inch PECVD platform, and when a 5-inch wafer SiO2 deposition is performed, the machine table needs to be switched to a 5-inch platform. Such switching not only consumes time and affects the utilization rate of the machine table, but also has the risk of causing machine table failure due to frequent temperature rising and falling. SUMMARY

[0005] The embodiments of the present application provide a PECVD platform, a PECVD device, and a design method of the PECVD platform to increase the flexibility of the PECVD platform in adapting to different wafers.

[0006] In one aspect, the embodiments of the present application provide a PECVD platform, comprising: a platform body, a plurality of placement grooves are formed on the surface of the platform body, and the placement grooves are at least two different sizes for placing wafers of different sizes.

[0007] Optionally, the two different specifications of the placement slots are a first placement slot and a second placement slot, and a diameter of the first placement slot is smaller than a diameter of the second placement slot.

[0008] Optionally, the number of the first placement slots and the number of the second placement slots are the same or different.

[0009] Optionally, the placement slots include a middle slot at a middle position of the carrier and a plurality of peripheral slots surrounding the middle slot.

[0010] Optionally, the middle slot is the second placement slot, and the peripheral slots include the first placement slots and the second placement slots.

[0011] Optionally, the number of the first placement slots and the number of the second placement slots in the peripheral slots are the same or different.

[0012] Optionally, the depth of the first placement slots and the depth of the second placement slots are the same or different.

[0013] Optionally, the first placement slots are used for placing 4-inch wafers, and the second placement slots are used for placing 5-inch wafers.

[0014] Optionally, the peripheral slots include 6 first placement slots and 2 second placement slots.

[0015] Optionally, a surface of the carrier body is further provided with a wafer taking hole corresponding to each of the placement slots, and the wafer taking hole partially overlaps the corresponding placement slot.

[0016] Optionally, a bottom of the carrier body is provided with a mounting structure matching a top of a heater in a PECVD machine, for mounting the carrier body to the top of the heater.

[0017] Optionally, the mounting structure includes a flange provided at a circumferential edge of a back surface of the carrier body.

[0018] Optionally, the mounting structure further includes a screw hole provided at the back surface of the carrier body.

[0019] Optionally, the screw hole is provided in plurality, and the plurality of screw holes are uniformly distributed along an inner side of the flange.

[0020] In another aspect, the embodiments of the present application also provide a PECVD device, including a machine, a heater, an upper cavity cover, and the PECVD carrier described above; the heater is installed on the machine, and the PECVD carrier is installed on a top of the heater; the upper cavity cover is covered on the machine to form a sealed cavity with the machine.

[0021] The PECVD carrier is used for placing wafers during wafer processing.

[0022] In another aspect, the embodiments of the present application also provide a PECVD carrier design method, the PECVD carrier comprising: a carrier body, a surface of the carrier body being provided with a plurality of placing slots, the placing slots being of at least two different sizes for placing wafers of different sizes; the method comprising:

[0023] determining a surface area of the carrier body and types of wafers to be placed and diameters of each type of wafer;

[0024] determining all candidate samples according to the surface area of the carrier body and the diameters of each type of wafer, each candidate sample comprising placing slots for placing all types of wafers;

[0025] determining whether the PECVD carrier of each candidate sample meets the production capacity demand within a certain time period;

[0026] selecting a candidate sample meeting the production capacity demand to design the number and positions of wafer placing slots of each type on the carrier body.

[0027] Optionally, the determining whether the PECVD carrier of each candidate sample meets the production capacity demand within a certain time period comprises:

[0028] determining production times of each type of wafer within the time period and process times of each type of wafer;

[0029] calculating production capacities of each type of wafer within the corresponding production time according to the process time of each type of wafer and the number of the type of wafer placed on the PECVD carrier of the candidate sample;

[0030] if the production capacities of all types of wafers within their corresponding production times all meet the corresponding production capacity demands, it is determined that the PECVD carrier of the candidate sample meets the production capacity demand within a certain time period.

[0031] Optionally, the determining whether the PECVD carrier of each candidate sample meets the production capacity demand within a certain time period comprises:

[0032] determining production times required to meet the production capacity demands of each type of wafer according to the production capacity demands, process times of each type of wafer and the number of the type of wafer placed on the PECVD carrier of the candidate sample;

[0033] if the sum of the production times of each type of wafer is less than the certain time period, the PECVD carrier of the candidate sample meets the production capacity demand within a certain time period.

[0034] Compared with the prior art, the technical scheme of the embodiments of the present application has the following beneficial effects:

[0035] The PECVD carrier provided by the embodiment of the present application is provided with a plurality of placing grooves on the same carrier body, and the placing grooves are of at least two different sizes for placing wafers of different sizes. In this way, when wafers of different sizes are subjected to thin film deposition processing, the carrier switching is not needed, and the wafers of different sizes can be adapted to realize the deposition of SiO2 or SiNx thin film of the wafer, and the processing efficiency and the PECVD machine utilization rate are effectively improved.

[0036] Further, the wafer taking holes corresponding to the placing grooves are formed on the surface of the carrier body, so that the wafers after processing can be conveniently taken off from the carrier body, and the wafer taking efficiency is effectively improved.

[0037] The PECVD equipment provided by the embodiment of the present application can simultaneously place PECVD carriers of different sizes, and can simultaneously realize the processing operation of wafers of different sizes, so that the processing efficiency and the PECVD machine utilization rate can be effectively improved.

[0038] The PECVD carrier design method provided by the embodiment of the present application determines the surface area of the carrier body and the type of the wafer to be placed and the diameter of each type; determines all arrangement samples according to the surface area of the carrier body and the diameter of each type; and designs the number and position of the wafer placing grooves of each type on the carrier body according to the production capacity demand within a certain time. The frequent switching of the PECVD carrier when processing wafers of different types is avoided, and the production capacity demand of wafers of each type can be ensured. BRIEF DESCRIPTION OF DRAWINGS

[0039] The accompanying drawings are used to provide a clearer understanding of the present application, and constitute a part of the specification, which together with the embodiments of the present application, is used to explain the present application, and does not constitute a limitation on the present application. In the drawings:

[0040] Figure 1 is a perspective view of the front direction of a PECVD carrier provided by the embodiment of the present application;

[0041] Figure 2 is a perspective view of the back direction of a PECVD carrier provided by the embodiment of the present application;

[0042] Figure 3 is a top view of a PECVD carrier provided by the embodiment of the present application;

[0043] Figure 4 is a side view of a PECVD carrier provided by the embodiment of the present application;

[0044] Figure 5 is a bottom view of a PECVD carrier provided by the embodiment of the present application;

[0045] Figure 6is a structural schematic diagram of a PECVD device provided by an embodiment of the present application;

[0046] Figure 7 is a flow chart of a PECVD platform design method provided by an embodiment of the present application;

[0047] Figure 8 is a schematic diagram of several different platform samples in an embodiment of the present application. DETAILED DESCRIPTION

[0048] In order to enable persons skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by persons skilled in the art without creative labor should fall within the scope of protection of the present application.

[0049] It should be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0050] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0051] The terms "first", "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "multiple" is two or more.

[0052] In the description of the present application, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0053] To address the problem that existing PECVD stages are incompatible with wafers of different sizes, requiring stage replacement for operations on wafers of different sizes, thus affecting machine utilization and potentially leading to machine malfunctions, this application provides a PECVD stage with at least two different sized placement slots on its surface, allowing for the placement of wafers of different sizes. This eliminates the need to replace the PECVD stage when performing PECVD operations on wafers of different sizes, improving machine utilization and operational efficiency.

[0054] The PECVD stage provided in this application includes: a stage body, the surface of which is provided with a plurality of placement slots, the placement slots being of at least two different sizes for placing wafers of different sizes. Depending on the wafer size, the number of placement slots of the two different sizes can be the same or different. Specifically, based on the surface area of ​​the stage body, the wafer size, etc., an appropriate layout can be adopted to ensure that the surface of the stage body is fully utilized.

[0055] By setting placement slots of different sizes, a single PECVD stage can be adapted to accommodate wafers of various sizes. In use, it is mounted on the heater within the machine. The wafers to be processed are placed into the corresponding placement slots to perform PECVD processing.

[0056] It should be noted that the PECVD stage provided in this application embodiment can be used to perform PECVD processing on wafers of different sizes simultaneously, or to perform PECVD processing on wafers of one size at a time. This application embodiment does not limit this.

[0057] The following explanation uses the example of opening two different sized placement slots on the surface of the platform body.

[0058] Reference Figure 1 and Figure 2 , Figure 1 and Figure 2 The images show a perspective view of the front and a perspective view of the back of a PECVD stage provided in an embodiment of this application.

[0059] In this embodiment, the PECVD stage includes a stage body 1, and the surface of the stage body 1 has a plurality of placement slots, the placement slots including two different sizes for placing wafers of different sizes. Figure 1As shown, the placement slots in this PECVD stage have two specifications, which, for ease of description, are referred to as the first placement slot 11 and the second placement slot 12, respectively. The diameter of the first placement slot 11 is smaller than the diameter of the second placement slot 12. In this example, the surface of the stage body 1 has six first placement slots 11 and three second placement slots 12. The first placement slots 11 are suitable for placing 4-inch wafers, and the second placement slots 12 are suitable for placing 5-inch wafers.

[0060] To fully utilize the surface of the platform body 1, with a fixed surface area, a central groove located in the middle of the platform body 1 and multiple peripheral grooves surrounding the central groove can be provided. For example, in Figure 1 In the example shown, the middle groove is the second placement groove 12, and the outer groove includes the first placement groove 11 and the second placement groove 12. Figure 1 In the example shown, the peripheral groove includes six first placement grooves 11 and two second placement grooves 12.

[0061] It should be noted that, in specific implementation, the number of the first placement slot 11 and the second placement slot 12 in the outer groove may be the same or different, and this application embodiment does not limit this.

[0062] In addition, the depths of the first placement slot 11 and the second placement slot 12 may be the same or different.

[0063] Furthermore, such as Figure 1 As shown, the surface of the stage body 1 is also provided with wafer pick-up holes 13 corresponding to each placement slot, and the wafer pick-up holes 13 partially overlap with the corresponding placement slots. Using these wafer pick-up holes 13, the wafers can be easily removed from the placement slots after the PECVD process is completed.

[0064] The following continues to refer to... Figures 3 to 5 Further details Figure 1 The specific structure of the PECVD stage in the illustrated embodiment. Figure 3 yes Figure 1 The illustrated embodiment provides a top view of the PECVD stage. Figure 4 This is its side view. Figure 5 It is its bottom view.

[0065] In this example, the transverse diameter of the platform body 1 is D1, and the longitudinal diameter is D2. In specific implementations, D1 and D2 may be the same or different, and this embodiment of the application does not limit this.

[0066] Taking the first placement slot 11 for placing a 4-inch wafer and the second placement slot 12 for placing a 5-inch wafer as an example, the specific structure is explained.

[0067] 4-inch silicon wafer dimensions: 100mm in diameter, approximately 0.5mm-0.8mm in thickness.

[0068] 5-inch sapphire wafer dimensions: 125mm in diameter, approximately 0.5mm-1.0mm in thickness.

[0069] like Figure 3 As shown, in this example, the diameter of the first placement slot 11 is d1, and the diameter of the second placement slot 12 is d2. d1 is adapted to a 4-inch wafer, for example, designed as d1 = 101.0 mm; d2 is adapted to a 5-inch wafer, for example, designed as d1 = 126.0 mm.

[0070] In addition, the diameter d3 of the pick-up hole 13 is designed to be 10.0 mm.

[0071] The depth of the take-up hole 13 can be designed to be greater than the depth of the placement groove. For example, in a non-limiting embodiment, the depth of the first placement groove 11 and the second placement groove 12 is designed to be 1.0 mm, and the depth of the take-up hole 13 is designed to be 1.5 mm.

[0072] Using the PECVD stage provided in this application embodiment, PECVD processes can be performed on wafers of different sizes simultaneously without changing the PECVD stage, thus improving the applicability of the PECVD stage to wafers of different sizes and also increasing processing efficiency. When using the PECVD stage of this application embodiment, it needs to be placed on the heater inside the PECVD machine. To better secure it, in a non-limiting embodiment, the bottom of the stage body 1 may also be provided with a mounting structure adapted to the top surface of the heater inside the PECVD machine to fix the stage body 1 to the heater.

[0073] It should be noted that the installation structure can be implemented in various ways, such as in... Figure 2 In one non-limiting embodiment shown, the mounting structure may include a flange 14 disposed on the circumferential edge of the back surface of the platform body 1. For example... Figure 4 In one typical application shown, the sidewall thickness h2 of the stage body 1 can be designed to be 46.8 mm, and the thickness of the flange 14 can be designed to be 10.8 mm. In use, the back side of the stage body 1 can be directly attached to the heater, with the back side of the stage body 1 abutting against the top surface of the heater, to achieve heat conduction between the heater and the stage body 1, so that it reaches the temperature required for wafer thin film deposition processing.

[0074] To further ensure the stability of the platform body 1 during operation, such as Figure 2In one non-limiting embodiment shown, the back of the stage body 1 may also be provided with screw holes 15. There may be multiple screw holes 15, which are evenly distributed along the inner side of the flange 14. Correspondingly, the heater is provided with through holes corresponding to the positions of the screw holes 15. During installation, a screw is passed through the through hole from the bottom of the heater and screwed onto the screw hole 15 to complete the fixation between the stage body 1 and the heater.

[0075] Of course, the above installation structure is only an exemplary illustration. In specific implementations, there may be other forms of installation structures, which are not limited in this application embodiment.

[0076] The PECVD stage can be made of materials with good thermal conductivity and high temperature resistance, such as aluminum, so that the heat from the heater can be fully transferred to the wafer on the PECVD stage to meet the temperature requirements during wafer processing.

[0077] Accordingly, embodiments of this application also provide a PECVD device, such as... Figure 6 The image shown is a schematic diagram of one structure of the PECVD equipment.

[0078] The PECVD equipment includes: a machine base 2, a heater 3, an upper chamber cover 4, and a PECVD stage 1. The heater 3 is mounted on the machine base 2, and the upper chamber cover 4 is placed on the machine base to form a sealed cavity with the machine base 2.

[0079] The process flow for thin film deposition on wafers using this PECVD equipment is as follows:

[0080] (1) Machine 2 first undergoes vacuum breaking and then opens the upper chamber cover 4;

[0081] (2) Place the cleaned wafer onto the PECVD stage 1;

[0082] (3) Cover the upper cavity cover 4, evacuate the machine, and then start the thin film deposition process.

[0083] (4) After the process is completed, the vacuum is broken, and then the upper cavity cover 4 is opened to take out the wafer. When taking the wafer out of the placement slot, a matching vacuum pen can be inserted into the wafer removal hole 13 to lift and remove the wafer from the placement slot from bottom to top. The operation is simple and convenient.

[0084] (5) Finally, close the cavity cover 4, and the processing is complete.

[0085] This application embodiment also provides a PECVD stage design method, wherein the PECVD stage includes: a stage body, and the surface of the stage body is provided with a plurality of placement slots, the placement slots having at least two different sizes for placing wafers of different sizes.

[0086] likeFigure 7 The diagram shown is a flowchart of a PECVD stage design method provided in an embodiment of this application.

[0087] In step 701, the surface area of ​​the stage body and the type and diameter of the wafer to be placed are determined.

[0088] In step 702, all candidate samples are determined based on the surface area of ​​the stage body and the diameter of each type, and each candidate sample includes a placement slot for placing all types of wafers.

[0089] In the embodiments of this application, the classification of wafer types is mainly based on their size, such as 3-inch, 4-inch, 5-inch, 6-inch, etc.

[0090] The number and / or position of placement slots for different types of wafers vary in different candidate samples. Taking the placement of two types of 4-inch and 5-inch wafers as an example, assuming the stage body diameter is 460mm, its surface area is 166106mm². 2 A schematic diagram of some of the candidate samples is shown below. Figure 8 As shown.

[0091] Among them, candidate sample (a) can hold 3 four-inch wafers and 5 five-inch wafers; candidate sample (b) can hold 7 four-inch wafers and 2 five-inch wafers; candidate sample (c) can hold 4 four-inch wafers and d five-inch wafers; and candidate sample (d) can hold 6 four-inch wafers and 3 five-inch wafers.

[0092] Figure 8 This only shows an example of some candidate samples when two types of wafers are placed on a PECVD stage. In a specific design, all candidate samples can be listed and selected from them to meet the capacity requirements.

[0093] Furthermore, when more types of wafers need to be placed, the determination of candidate samples is similar to that described above, and will not be repeated here.

[0094] In step 703, it is determined whether the PECVD stage of each candidate sample meets the production capacity requirements within a certain period of time.

[0095] Typically, the demand for different types of wafers can vary over a certain period (e.g., six months or a year). This demand can be determined based on customer orders and / or the manufacturer's own production calculations. Accordingly, production periods for different types of wafers can be allocated based on these varying capacity requirements.

[0096] In some embodiments, the production time for each type of wafer within a certain time period can be determined first, i.e., the production time allocated to each type of wafer. Then, based on the process time of each type of wafer and the number of wafers of that type placed on the PECVD stage of the candidate sample, the capacity of that type of wafer within the corresponding production time is calculated; if the capacity of all types of wafers within their corresponding production time meets the corresponding capacity requirements, then it is determined that the PECVD stage of the candidate sample meets the capacity requirements for a certain time period.

[0097] In other embodiments, the production time required to meet the production capacity requirements of each type of wafer can be determined based on the capacity requirements of each type of wafer, the process time, and the number of wafers of the type placed on the PECVD stage of each candidate sample; if the total production time of each type of wafer is less than a certain time, it indicates that the PECVD stage of the candidate sample meets the capacity requirements for a certain period of time.

[0098] In step 704, select a sample stage design that meets the production capacity requirements and determine the number and location of various types of wafer placement slots on the stage body.

[0099] It should be noted that when there are multiple candidate samples that meet the production capacity requirements, any one of the candidate samples can be selected, or other factors such as production efficiency and energy consumption can be considered for selection. This application does not limit this.

[0100] The PECVD stage design method provided in this application allows for the placement of various wafer types on a single PECVD stage. The number and position of each wafer type can be determined based on the surface area of ​​the stage and the required production capacity over a given time. Using the PECVD stage designed in this application, no stage switching is required when performing thin film deposition on wafers of different sizes. This avoids frequent stage switching when operating on different wafer types and ensures the production capacity requirements for each wafer type are met.

[0101] It should be understood that the application of this application is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

[0102] While this application discloses the above information, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of this application; therefore, the scope of protection of this application shall be determined by the scope defined in the claims.

Claims

1. A PECVD load station, characterized by, The PECVD carrier comprises: a carrier body, a surface of the carrier body is provided with a plurality of placing slots, the placing slots are at least two different sizes, and different sizes of wafers are placed in the placing slots.

2. The PECVD station of claim 1, wherein, The two different specifications of the placing slots are a first placing slot and a second placing slot, and the diameter of the first placing slot is smaller than the diameter of the second placing slot.

3. The PECVD station of claim 2, wherein, The number of the first placing slots and the number of the second placing slots are the same or different.

4. The PECVD station of claim 2, wherein, The placing slots include a middle slot located at the middle position of the carrier and a plurality of peripheral slots surrounding the middle slot.

5. The PECVD station of claim 4, wherein, The middle slot is the second placing slot, and the peripheral slots include the first placing slots and the second placing slots.

6. The PECVD station of claim 5, wherein, The number of the first placing slots and the number of the second placing slots in the peripheral slots are the same or different.

7. The PECVD station of claim 3, wherein, The depth of the first placing slots and the depth of the second placing slots are the same or different.

8. The PECVD station of claim 4, wherein, The first placing slots are used for placing 4-inch wafers, and the second placing slots are used for placing 5-inch wafers.

9. The PECVD station of claim 8, wherein, The peripheral slots include six first placing slots and two second placing slots.

10. The PECVD station of claim 1, wherein, The surface of the carrier body is further provided with a wafer taking hole corresponding to each of the placing slots, and the wafer taking hole partially overlaps with the corresponding placing slot.

11. The PECVD station according to any one of claims 1 to 10, wherein, The bottom of the carrier body is provided with a mounting structure matched with the top of a heater in a PECVD machine, and the mounting structure is used for mounting the carrier body to the top of the heater.

12. The PECVD station of claim 11, wherein, The mounting structure comprises a flange provided on the circumferential edge of the back surface of the carrier body.

13. The PECVD station of claim 12, wherein, The mounting structure further comprises screw holes provided on the back surface of the carrier body.

14. The PECVD station of claim 13, wherein, The screw holes are a plurality of screw holes, and the plurality of screw holes are uniformly distributed along the inner side of the flange.

15. A PECVD apparatus, characterized in that, The PECVD carrier comprises: a machine, a heater, an upper cavity cover, and the PECVD carrier according to any one of claims 1 to 14; the heater is mounted on the machine, the PECVD carrier is mounted on the top of the heater, and the upper cavity cover is covered on the machine to form a sealed cavity with the machine. The PECVD carrier is used for placing wafers during wafer processing.

16. A PECVD load station design method, characterized by, The PECVD carrier comprises a carrier body, a surface of the carrier body is provided with a plurality of placing slots, the placing slots are at least two different sizes, and different sizes of wafers are placed in the placing slots; the method comprises: determining the surface area of the carrier body and the type and diameter of each type of wafer to be placed; determining all candidate samples according to the surface area of the carrier body and the diameter of each type, each candidate sample including placing slots for placing all types of wafers; determining whether the PECVD carrier of each candidate sample meets the production capacity demand within a certain period of time; selecting a candidate sample that meets the production capacity demand to design the number and position of each type of wafer placing slot on the carrier body.

17. The PECVD station design method of claim 16, wherein, The determination of whether the PECVD carrier of each candidate sample meets the production capacity demand within a certain period of time comprises: determining the production time of each type of wafer within the time period and the process time of each type of wafer; calculating the production capacity of each type of wafer within the corresponding production time according to the process time of each type of wafer and the number of the type of wafer placed on the PECVD carrier of the candidate sample. If the production capacity of all types of wafers in their corresponding production time meets the corresponding production capacity demand, it is determined that the PECVD platform of the candidate sample meets the production capacity demand in a certain time.

18. The PECVD station design method of claim 16, wherein, The determination of whether the PECVD platform of each candidate sample meets the production capacity demand in a certain time comprises: According to the production capacity demand of each type of wafer, the process time, and the number of the type of wafers placed on the PECVD platform of the candidate sample, the production time required to meet the production capacity demand of the type of wafer is determined. If the sum of the production time of each type of wafer is less than the certain time, the PECVD platform of the candidate sample meets the production capacity demand in a certain time.

Images