Multi-parameter independent reconfigurable radio frequency band-pass filter chip

Abstract

The invention discloses a multi-parameter independent reconfigurable radio frequency band-pass filter chip, and the chip comprises a broadband filtering module which is used for carrying out the broadband filtering processing of a to-be-processed radio frequency signal, and obtaining a radio frequency filtering signal; the lower sideband reconstruction module is used for adjusting the low-frequency cut-off frequency of the broadband filtering module based on the NA first control signals; the upper sideband reconstruction module is used for adjusting the high-frequency cut-off frequency of the broadband filtering module based on the NB second control signals; and the impedance matching module is used for performing impedance matching on the broadband filtering module, the lower sideband reconstruction module and the upper sideband reconstruction module based on the NC third control signals. According to the invention, high-performance flexible reconstruction of radio frequency band-pass filter chip parameters can be realized.

Description

Technical Field

[0001] This invention belongs to the field of microwave communication and radio frequency integrated circuit technology, specifically a multi-parameter independent reconfigurable radio frequency bandpass filter chip. Background Technology

[0002] With the rapid development of wireless communication technology, the performance requirements for RF front-end modules are increasing. Especially in multi-band applications, traditional fixed-frequency filters can no longer meet the demands of dynamic adjustment. Reconfigurable RF bandpass filter chips have become a research hotspot due to their ability to adapt to different frequency bands and bandwidth requirements. These filters can dynamically adjust the center frequency or bandwidth by changing the capacitance or inductance values ​​of the resonator, achieving selection for different frequency bands. Furthermore, reconfigurable RF filters have advantages such as small size, light weight, and low power consumption, making them ideal for integration into low-cost on-chip systems.

[0003] Currently, there are few reports on reconfigurable RF bandpass filters. Most designs achieve this by loading a varactor diode onto a microstrip line comb filter. This involves loading a varactor diode onto one end of the microstrip line resonator and adjusting the resonator's frequency using an external DC bias voltage to achieve the reconfiguration effect. However, such designs have a narrow reconfiguration range, limited reconfiguration functionality, and poor overall filtering performance, requiring further improvement.

[0004] Therefore, in order to meet the ever-increasing requirements of wireless communication technology, it is of great practical significance to propose a new type of high-performance, highly flexible, multi-parameter independent reconfigurable radio frequency bandpass filter that can adapt to the needs of modern communication systems. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a multi-parameter independent reconfigurable radio frequency bandpass filter chip, which can realize high-performance and flexible reconfiguration of the parameters of the radio frequency bandpass filter chip.

[0006] To address the aforementioned technical problems, the first aspect of this invention discloses a multi-parameter independent reconfigurable radio frequency bandpass filter chip, the chip comprising a broadband filtering module, a lower sideband reconstruction module, an upper sideband reconstruction module, and an impedance matching module; The broadband filtering module is provided with an RF input port P1 and an RF output port P2; the RF input port P1 receives the externally input RF signal to be processed; the RF output port P2 outputs the RF filtered signal. The broadband filtering module is connected to the lower sideband reconstruction module, the upper sideband reconstruction module and the impedance matching module, and is used to perform broadband filtering on the radio frequency signal to be processed to obtain the radio frequency filtered signal. The lower sideband reconstruction module has NA first control ports; each of the NA first control ports receives NA first control signals from external input. ,and , , , , and All are integers greater than 1; The lower sideband reconstruction module is used to adjust the low-frequency cutoff frequency of the broadband filter module based on NA first control signals. The upper sideband reconstruction module is provided with NB second control ports; the NB second control ports respectively receive NB second control signals input from the outside; ,and , and All are integers greater than 1; The upper sideband reconstruction module is used to adjust the high-frequency cutoff frequency of the broadband filtering module based on NB of the second control signals; The impedance matching module has NC third control ports; each of the NC third control ports receives NC third control signals input from the outside; NC is an integer greater than 1. The impedance matching module is used to perform impedance matching on the broadband filtering module, the lower sideband reconstruction module, and the upper sideband reconstruction module based on NC third control signals.

[0007] In this embodiment of the invention, the broadband filtering module includes a capacitor. ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,resistance ,inductance ,inductance ,inductance ,inductance ,inductance and inductor ; The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor and the capacitor Connected in series; The resistor One end, with the capacitor The end away from the RF input port P1 is connected; the resistor The other end is grounded; The capacitor One end, with the capacitor The end of the capacitor that is furthest from the RF input port P1 is connected; The other end is grounded; The inductor The inductor The inductor The inductor and the inductor , respectively with the capacitor The capacitor The capacitor The capacitor and the capacitor in parallel; The inductor One end of the inductor is connected to the radio frequency output port P2; The other end is connected to the capacitor One end of the capacitor is connected; The other end is grounded; The capacitor One end of the capacitor is connected to the radio frequency output port P2; The other end is grounded.

[0008] In this embodiment of the invention, the capacitor and the inductor Parallel resonant frequency The capacitor and the inductor Parallel resonant frequency The capacitor and the inductor Parallel resonant frequency The capacitor and the inductor Parallel resonant frequency and the inductor With the capacitor Series resonant frequency Different; , , , and All are higher than the capacitance. and the inductor Parallel resonant frequency .

[0009] In this embodiment of the invention, the lower sideband reconstruction module includes a first reconstruction unit, a second reconstruction unit, a third reconstruction unit, a fourth reconstruction unit, a fifth reconstruction unit, and a sixth reconstruction unit. The first end of the first reconstruction unit is connected to the radio frequency input port P1; The first end of the second reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the third reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the fourth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the fifth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the sixth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The second terminals of the first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit, and the sixth reconstruction unit are all grounded; The first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit, and the sixth reconstruction unit are respectively provided with , , , , and Each of the lower sideband control ports is connected to one of the first control ports of the lower sideband reconstruction module.

[0010] In this embodiment of the invention, the first reconstruction unit includes an inductor. ,resistance and A switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the first reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the first reconstruction unit The first terminal of the switched capacitor subunit; in the first reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the first reconfiguration unit. The lower sideband control port; The second reconfiguration unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the second reconstruction unit; the inductor The other end is connected to the resistor one end, and in the second reconstruction unit The first terminal of the switched capacitor subunit; in the second reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the second reconfiguration unit. The lower sideband control port; The third reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the third reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the third reconstruction unit The first terminal of the switched capacitor subunit; in the third reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the third reconfiguration unit. The lower sideband control port; The fourth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the fourth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the fourth reconstruction unit The first terminal of the switched capacitor subunit; in the fourth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the fourth reconfiguration unit. The lower control port is described above; The fifth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the fifth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the fifth reconstruction unit The first terminal of the switched capacitor subunit; in the fifth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the fifth reconfiguration unit. The lower control port is described above; The sixth reconstruction unit includes an inductor. and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the sixth reconstruction unit; the inductor The other end is connected to the sixth reconstruction unit. The first terminal of the switched capacitor subunit; in the sixth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the sixth reconfiguration unit. The lower control port is described above; The resistor The resistor The resistor The resistor and the resistor The other end of each is grounded; In the first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit, and the sixth reconstruction unit, the second terminal of all the switched capacitor subunits is grounded.

[0011] In this embodiment of the invention, the upper sideband reconstruction module includes a seventh reconstruction unit, an eighth reconstruction unit, and a ninth reconstruction unit; The first end of the seventh reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the eighth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the ninth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The second terminals of the seventh reconstruction unit, the eighth reconstruction unit, and the ninth reconstruction unit are all grounded; The seventh reconstruction unit, the eighth reconstruction unit, and the ninth reconstruction unit are each equipped with , and Each of the upper sideband control ports is connected to one of the second control ports of the upper sideband reconstruction module.

[0012] In this embodiment of the invention, the seventh reconstruction unit includes an inductor. and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the seventh reconstruction unit; the inductor The other end is connected to the seventh reconstruction unit. The first terminal of the switched capacitor subunit; in the seventh reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the seventh reconfiguration unit. The aforementioned upper sideband control port; The eighth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the eighth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the eighth reconstruction unit The first terminal of the switched capacitor subunit; in the eighth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the eighth reconfiguration unit. The aforementioned upper sideband control port; The ninth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the ninth reconstruction unit; the inductor The other end is connected to the resistor One end, and in the ninth reconstruction unit The first terminal of the switched capacitor subunit; in the ninth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the ninth reconfiguration unit. The aforementioned upper sideband control port; The resistor and the resistor The other end of each is grounded; In the seventh, eighth, and ninth reconstruction units, the second terminal of all the switched capacitor subunits is grounded.

[0013] In an embodiment of the present invention, , , , , , and All are equal to 5; and They are equal to 3 and 4 respectively.

[0014] In this embodiment of the invention, the impedance matching module includes five switched capacitor subunits; NC is five. The first and second terminals of the first switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the second switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the third switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the fourth switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the fifth switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The control terminals of the five switched capacitor subunits of the impedance matching module are respectively connected to the five third control ports of the impedance matching module.

[0015] In this embodiment of the invention, the switched capacitor subunit includes a switching transistor and a controlled capacitor; The source of the switching transistor is connected to the first terminal of the switched capacitor subunit; The gate of the switching transistor is connected to the control terminal of the switched capacitor subunit; The drain of the switching transistor is connected to one end of the corresponding controlled capacitor; the other end of the controlled capacitor is connected to the second end of the switched capacitor subunit.

[0016] Compared with the prior art, the embodiments of the present invention have the following beneficial effects: By designing the lower sideband reconfiguration module and the upper sideband reconfiguration module independently, the low-frequency cutoff frequency and the high-frequency cutoff frequency can be independently and precisely controlled, thereby realizing multiple reconfigurable functions in the radio frequency range at the same time. During the reconfiguration process, the chip always maintains good input-output matching, excellent rectangular coefficient and sufficient out-of-band rejection. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a multi-parameter independent reconfigurable radio frequency bandpass filter chip disclosed in an embodiment of the present invention.

[0019] Figure 2 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the first reconfiguration mode.

[0020] Figure 3 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiments of the present invention under the second reconstruction mode.

[0021] Figure 4 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the third reconfiguration mode.

[0022] Figure 5 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the fourth reconfiguration mode.

[0023] Figure 6 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the fifth reconfiguration mode. Detailed Implementation

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0026] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances. Example

[0027] Please see Figure 1-6 . Figure 1 This is a schematic diagram of the structure of a multi-parameter independent reconfigurable radio frequency bandpass filter chip disclosed in an embodiment of the present invention. Figure 2 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the first reconfiguration mode. Figure 3 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiments of the present invention under the second reconstruction mode. Figure 4 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the third reconfiguration mode. Figure 5 This is the layout simulation result of a multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiment of the present invention under the fourth reconfiguration mode. Figure 6 This is a layout simulation result of a multi-parameter independently reconfigurable RF bandpass filter chip disclosed in an embodiment of the present invention under the fifth reconfiguration mode. Among them, Figure 1 The described multi-parameter independently reconfigurable RF bandpass filter chip is applied in the fields of microwave communication and RF integrated circuits. The embodiments of this invention do not limit the flexibility of RF bandpass filter chip parameters. Figure 1 As shown, the chip includes a broadband filtering module, a lower sideband reconstruction module, an upper sideband reconstruction module, and an impedance matching module. The broadband filtering module is provided with an RF input port P1 and an RF output port P2; the RF input port P1 receives the externally input RF signal to be processed; the RF output port P2 outputs the RF filtered signal. The broadband filtering module is connected to the lower sideband reconstruction module, the upper sideband reconstruction module and the impedance matching module, and is used to perform broadband filtering on the radio frequency signal to be processed to obtain the radio frequency filtered signal. The lower sideband reconstruction module has NA first control ports; each of the NA first control ports receives NA first control signals from external input. ,and , , , , and All are integers greater than 1; The lower sideband reconstruction module is used to adjust the low-frequency cutoff frequency of the broadband filter module based on NA first control signals. It should be noted that the first control signal includes two states: high level and low level. Therefore, NA first control signals correspond to a total of A combination of states.

[0028] The upper sideband reconstruction module is provided with NB second control ports; the NB second control ports respectively receive NB second control signals input from the outside; ,and , and All are integers greater than 1; It should be noted that the second control signal includes two states: high level and low level. Therefore, NB second control signals correspond to a total of A combination of states.

[0029] The upper sideband reconstruction module is used to adjust the high-frequency cutoff frequency of the broadband filtering module based on NB of the second control signals; The impedance matching module has NC third control ports; each of the NC third control ports receives NC third control signals input from the outside; NC is an integer greater than 1. It should be noted that the third control signal includes two states: high level and low level. Therefore, NC third control signals correspond to a total of A combination of states.

[0030] The impedance matching module is used to perform impedance matching on the broadband filtering module, the lower sideband reconstruction module, and the upper sideband reconstruction module based on NC third control signals.

[0031] In an optional embodiment, the broadband filtering module includes a capacitor. ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,resistance ,inductance ,inductance ,inductance ,inductance ,inductance and inductor ; The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor The capacitor and the capacitor Connected in series; The resistor One end, with the capacitor The end away from the RF input port P1 is connected; the resistor The other end is grounded; The capacitor One end, with the capacitor The end of the capacitor that is furthest from the RF input port P1 is connected; The other end is grounded; The inductor The inductor The inductor The inductor and the inductor , respectively with the capacitor The capacitor The capacitor The capacitor and the capacitor in parallel; It should be noted that capacitors With inductance The parallel connection serves two purposes: firstly, it reduces the parasitic parameters introduced by multiple switches on the main circuit, thereby reducing the impact of parasitic parameters on in-band matching; secondly, it generates an out-of-band transmission zero, further improving the out-of-band rejection capability of the filter.

[0032] The inductor One end of the inductor is connected to the radio frequency output port P2; The other end is connected to the capacitor One end of the capacitor is connected; The other end is grounded; The capacitor One end of the capacitor is connected to the radio frequency output port P2; The other end is grounded.

[0033] It should be noted that the grounding capacitor applied at the RF output port P2 It is used to fine-tune the matching and in-band flatness, reducing the performance differences of the filter under different states during the reconstruction process.

[0034] As can be seen, the broadband filtering module with the above structure can generate a broadband filtering response for the filter.

[0035] In another alternative embodiment, the capacitor and the inductor Parallel resonant frequency The capacitor and the inductor Parallel resonant frequency The capacitor and the inductor Parallel resonant frequency The capacitor and the inductor Parallel resonant frequency and the inductor With the capacitor Series resonant frequency Different; , , , and All are higher than the capacitance. and the inductor Parallel resonant frequency .

[0036] In yet another optional embodiment, the lower band reconstruction module includes a first reconstruction unit, a second reconstruction unit, a third reconstruction unit, a fourth reconstruction unit, a fifth reconstruction unit, and a sixth reconstruction unit. The first end of the first reconstruction unit is connected to the radio frequency input port P1; The first end of the second reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the third reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the fourth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the fifth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the sixth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The second terminals of the first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit, and the sixth reconstruction unit are all grounded; The first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit, and the sixth reconstruction unit are respectively provided with , , , , and Each of the lower sideband control ports is connected to one of the first control ports of the lower sideband reconstruction module.

[0037] In yet another alternative embodiment, the first reconfiguration unit includes an inductor. ,resistance and A switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the first reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the first reconstruction unit The first terminal of the switched capacitor subunit; in the first reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the first reconfiguration unit. The lower control port is described above; It should be noted that the resistor Used to balance the first reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0038] The second reconfiguration unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the second reconstruction unit; the inductor The other end is connected to the resistor one end, and in the second reconstruction unit The first terminal of the switched capacitor subunit; in the second reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the second reconfiguration unit. The lower control port is described above; It should be noted that the resistor Used to balance the second reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0039] The third reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the third reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the third reconstruction unit The first terminal of the switched capacitor subunit; in the third reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the third reconfiguration unit. The lower control port is described above; It should be noted that the resistor Used to balance the third reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0040] The fourth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the fourth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the fourth reconstruction unit The first terminal of the switched capacitor subunit; in the fourth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the fourth reconfiguration unit. The lower control port is described above; It should be noted that the resistor Used to balance the fourth reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0041] The fifth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the fifth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the fifth reconstruction unit The first terminal of the switched capacitor subunit; in the fifth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the fifth reconfiguration unit. The lower control port is described above; It should be noted that the resistor Used to balance the fifth reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0042] The sixth reconstruction unit includes an inductor. and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the sixth reconstruction unit; the inductor The other end is connected to the sixth reconstruction unit. The first terminal of the switched capacitor subunit; in the sixth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the sixth reconfiguration unit. The lower control port is described above; The resistor The resistor The resistor The resistor and the resistor The other end of each is grounded; In the first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit, and the sixth reconstruction unit, the second terminal of all the switched capacitor subunits is grounded.

[0043] In yet another optional embodiment, the upper sideband reconstruction module includes a seventh reconstruction unit, an eighth reconstruction unit, and a ninth reconstruction unit. The first end of the seventh reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the eighth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The first end of the ninth reconstruction unit is connected to the capacitor. The end furthest from the radio frequency input port P1; The second terminals of the seventh reconstruction unit, the eighth reconstruction unit, and the ninth reconstruction unit are all grounded; The seventh reconstruction unit, the eighth reconstruction unit, and the ninth reconstruction unit are each equipped with , and Each of the upper sideband control ports is connected to one of the second control ports of the upper sideband reconstruction module.

[0044] It should be noted that the above capacitors and capacitor The end furthest from the RF input port P1 refers to the end from the RF input port P1 and the capacitor. ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance ,capacitance The signals are sequentially routed to the series signal path at the RF output port P2, with the signals originating from the capacitors respectively. and capacitor The port of departure.

[0045] In yet another alternative embodiment, the seventh reconstruction unit includes an inductor. and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the seventh reconstruction unit; the inductor The other end is connected to the seventh reconstruction unit. The first terminal of the switched capacitor subunit; in the seventh reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the seventh reconfiguration unit. The aforementioned upper sideband control port; The eighth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the eighth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the eighth reconstruction unit The first terminal of the switched capacitor subunit; in the eighth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the eighth reconfiguration unit. The aforementioned upper sideband control port; It should be noted that the resistor Used to balance the eighth reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0046] The ninth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the ninth reconstruction unit; the inductor The other end is connected to the resistor One end, and in the ninth reconstruction unit The first terminal of the switched capacitor subunit; in the ninth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the ninth reconfiguration unit. The aforementioned upper sideband control port; It should be noted that the resistor Used to balance the ninth reconstruction unit The potential of the switching transistors in each switched capacitor subunit is controlled to ensure that all the switching transistors can work normally, while absorbing stray signals and improving the stability of the chip.

[0047] The resistor and the resistor The other end of each is grounded; In the seventh, eighth, and ninth reconstruction units, the second terminal of all the switched capacitor subunits is grounded.

[0048] It should be noted that multiple large resistors (R1-R8) are applied at different locations in the circuit to balance the potential of the switching transistors, ensuring that all switching transistors can work normally, while also absorbing stray signals and improving the stability of the chip.

[0049] It should be noted that the resonant frequencies of the first, second, third, fourth, fifth, and sixth reconstruction units are all lower than the resonant frequencies of the seventh, eighth, and ninth reconstruction units. This ensures that when the NA first control signals of the lower sideband reconstruction module are input in different states, only the low-frequency cutoff frequency of the filter changes, while when the NB second control signals of the upper sideband reconstruction module are input in different states, only the high-frequency cutoff frequency of the filter changes. Furthermore, by using a large capacitor (e.g., pF level) and a large inductor (e.g., nH level) design for the lower sideband reconstruction module, and a small capacitor (e.g., fF level) and a small inductor (e.g., pH level) design for the upper sideband reconstruction module, it is possible to achieve resonant frequencies of the first, second, third, fourth, fifth, and sixth reconstruction units that are all lower than the resonant frequencies of the seventh, eighth, and ninth reconstruction units.

[0050] In yet another optional embodiment, the impedance matching module includes five of the switched capacitor subunits; NC is five. The first and second terminals of the first switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the second switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the third switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the fourth switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The first and second terminals of the fifth switched capacitor subunit of the impedance matching module are respectively connected to the capacitor. The two ends; The control terminals of the five switched capacitor subunits of the impedance matching module are respectively connected to the five third control ports of the impedance matching module.

[0051] In yet another optional embodiment, the switched capacitor subunit includes a switching transistor and a controlled capacitor; The source of the switching transistor is connected to the first terminal of the switched capacitor subunit; The gate of the switching transistor is connected to the control terminal of the switched capacitor subunit; The drain of the switching transistor is connected to one end of the corresponding controlled capacitor; the other end of the controlled capacitor is connected to the second end of the switched capacitor subunit.

[0052] It should be noted that by applying a high-level or low-level voltage to the control terminal of the switched capacitor subunit, the path between the source and drain of the corresponding switching transistor can be switched on or off, thereby allowing the corresponding controlled capacitor to be connected or not connected to the overall circuit of the filter.

[0053] In yet another alternative embodiment, such as Figure 1 As shown, , , , , , and All are equal to 5; and They are equal to 3 and 4 respectively.

[0054] The filter's reconstruction function is achieved through the control of the transmission zeros, and the distribution of these transmission zeros is as follows: (1) The switching transistors of the five switched capacitor subunits of the first reconfiguration unit are numbered as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series to form a series resonance, thus generating a transmission zero outside the low-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0055] (2) The switching transistors of the five switched capacitor subunits of the second reconfiguration unit are numbered as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series to form a series resonance, thus generating a transmission zero outside the low-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0056] (3) The switching transistor numbers of the five switched capacitor subunits of the third reconfiguration unit are as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series to form a series resonance, thus generating a transmission zero outside the low-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0057] (4) The switching transistor numbers of the five switched capacitor subunits of the fourth reconfiguration unit are as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series to form a series resonance, thus generating a transmission zero outside the low-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0058] (5) The switching transistor numbers of the five switched capacitor subunits of the fifth reconfiguration unit are as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series to form a series resonance, thus generating a transmission zero outside the low-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0059] (6) The switching transistor numbers of the three switched capacitor subunits of the sixth reconfiguration unit are respectively , , The corresponding controlled capacitors are respectively , , Inductance on the branch circuit With switching transistor , , and capacitor , , The switched capacitors are connected in series to form a series resonance, thus generating a transmission zero outside the low-frequency band. The switching transistors are controlled through their respective control ports. , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0060] (7) The switching transistor numbers of the four switched capacitor subunits of the seventh reconfiguration unit are respectively , , , The corresponding controlled capacitors are respectively , , , Inductance on the branch circuit With switching transistor , , , and capacitor , , , The switched capacitors are connected in series, forming a series resonance, thus generating a transmission zero outside the high-frequency band. The switching transistors are controlled through their respective control ports. , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0061] (8) The switching transistor numbers of the five switched capacitor subunits of the eighth reconfiguration unit are as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series, forming a series resonance, thus generating a transmission zero outside the high-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0062] (9) The switching transistor numbers of the five switched capacitor subunits of the ninth reconfiguration unit are as follows: , , , , The corresponding controlled capacitors are respectively , , , , Inductance on the branch circuit With switching transistor , , , , and capacitor , , , , The switched capacitors are connected in series, forming a series resonance, thus generating a transmission zero outside the high-frequency band. The switching transistors are controlled through their respective control ports. , , , , The selection between different open and closed states is used to reconstruct the resulting transmission zero point position.

[0063] (10) Capacitor With inductance When connected in parallel, they form a parallel resonance, generating a fixed transmission zero at low frequencies. Capacitor , , , Inductance , , , When connected in parallel, they form a parallel resonance, generating four fixed transmission zeros at high frequencies. Simultaneously, the inductors... With capacitor When connected in series, they form a resonance, which also produces a fixed transmission zero at high frequencies.

[0064] It should be noted that the switching transistors of the five switched capacitor subunits of the impedance matching module are numbered as follows: , , , , The corresponding controlled capacitors are respectively , , , , .

[0065] It should be noted that, since the lower sideband reconstruction module has NA first control ports, the upper sideband reconstruction module has NB second control ports, and the impedance matching module has NC third control ports, the filter has a total of The filter performance is tested under NN control states to obtain the filter parameter set for each control state. The filter parameter set includes the low-frequency cutoff frequency, high-frequency cutoff frequency, 3-dB bandwidth, center frequency, and a performance subset, which may include passband insertion loss IL, passband flatness PF, rectangular coefficient K, input port reflection coefficient S11, and output port reflection coefficient S22, etc. Based on the filter parameter set corresponding to the NN control states, the following reconstruction methods can be used: (1) First reconstruction method (low-frequency cutoff frequency is stable, high-frequency cutoff frequency is adjusted). The steps are as follows: The minimum and maximum low-frequency cutoff frequencies are preset as fa1 and fa2, respectively. From the N sets of filter parameters, select the filter parameter set whose low-frequency cutoff frequency is greater than fa1 and less than fa2, and whose performance subset meets the application requirements, resulting in NNA filter parameter sets. ; The actual control state of the filter is switched between the control states corresponding to the NNA filter parameter sets to achieve the reconstruction and adjustment of the filter's high-frequency cutoff frequency.

[0066] like Figure 2 As shown, the measured high-frequency cutoff frequency was adjusted within the range of 7.5GHz-12.5GHz, and only 16 reconstruction states are displayed, with each state evenly spaced. During the reconstruction process, the loss at the passband center frequency remained less than 10dB, while the filters maintained extremely high rectangular coefficients and out-of-band rejection exceeding 50dB.

[0067] (2) Second reconstruction method (high-frequency cutoff frequency stabilized, low-frequency cutoff frequency adjusted). The steps are as follows: The minimum and maximum values ​​of the preset high-frequency cutoff frequencies are fb1 and fb2. From the N sets of filter parameters, select the filter parameter set whose high-frequency cutoff frequency is greater than fb1 and less than fb2, and whose performance subset meets the application requirements, to obtain NNB sets of filter parameters. ; The actual control state of the filter is switched between the control states corresponding to the NNB filter parameter sets to achieve the reconstruction and adjustment of the filter's low-frequency cutoff frequency.

[0068] like Figure 3 As shown, the measured low-frequency cutoff frequency was adjusted within the range of 6.3GHz-11.1GHz, and only 16 reconstruction states are displayed, with each state evenly spaced. During the reconstruction process, the loss at the passband center frequency remained less than 9dB, and the filter maintained an extremely high roll-off factor and out-of-band rejection exceeding 48dB.

[0069] (3) Third reconstruction method (3-dB bandwidth stable, center frequency adjusted). The steps are as follows: The minimum and maximum values ​​of the preset 3-dB bandwidth are BW1 and BW2. From the N sets of filter parameters, select the filter parameter set with a 3-dB bandwidth greater than BW1 and less than BW2, and whose performance subset meets the application requirements, to obtain NNC sets of filter parameters. ; The actual control state of the filter is switched between the control states corresponding to the NNC filter parameter sets to achieve the reconstruction and adjustment of the filter's center frequency.

[0070] like Figure 4 As shown, in actual measurements, the 3-dB bandwidth of the filter is fixed in the range of 0.5GHz-6GHz, and its center frequency can be reconfigured in the frequency range of 6.3GHz-12.5GHz.

[0071] (4) Fourth reconstruction method (center frequency stabilized, 3-dB bandwidth adjusted). The steps are as follows: The preset minimum and maximum center frequencies are fc1 and fc2. From the N sets of filter parameters, select the filter parameter set whose center frequency is greater than fc1 and less than fc2, and whose performance subset meets the application requirements, resulting in NND sets of filter parameters. ; The actual control state of the filter is switched between the control states corresponding to the NND filter parameter sets to achieve the reconstruction and adjustment of the filter's 3-dB bandwidth.

[0072] like Figure 5 As shown, within the frequency range of 6.3GHz-12.5GHz, when the center frequency of the filter is fixed, its 3-dB bandwidth can achieve reconfiguration adjustment within the frequency range of 0.5GHz-6GHz.

[0073] (5) Fifth reconstruction method (arbitrarily adjust the low-frequency cutoff frequency, high-frequency cutoff frequency, 3-dB bandwidth, or center frequency). The steps are as follows: From N sets of filter parameters, a subset of filter parameters whose performance meets the application requirements is selected, resulting in NNE sets of filter parameters. ; The actual control state of the filter is switched between the control states corresponding to NNE filter parameter sets, thereby achieving arbitrary reconfiguration and adjustment of the filter.

[0074] like Figure 6 As shown, the filter has a passband range of 6.5-12.1 GHz, a center frequency of 9.3 GHz, a 3-dB bandwidth of 5.66 GHz, and a minimum insertion loss of 4.2 dB within the passband. It exhibits good input-output matching within the passband, with both input and output matching exceeding 10.5 dB. The rejection ratio reaches 40 dB at both 5.2 GHz and 14.2 GHz, and the overall out-of-band rejection ratio is above 50 dB, demonstrating excellent filter performance.

[0075] It should be noted that the multi-parameter independent reconfigurable RF bandpass filter chip described in the embodiments of the present invention is implemented using Win Semiconductors GaAs PHEMT technology, and its physical size is 4.8mm × 1.33mm. Figure 2-6 The simulation software used for the simulated layout is Advanced Design System 2021.

[0076] As can be seen, the multi-parameter independent reconfigurable RF bandpass filter chip described in the embodiments of the present invention can simultaneously realize multiple reconfigurable functions in the RF range. During the reconfiguration process, the chip always maintains good input-output matching, excellent rectangular coefficient, and sufficient out-of-band rejection, resulting in extremely excellent overall performance.

[0077] The device embodiments described above are merely illustrative. The modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical modules; that is, they may be located in one place or distributed across multiple network modules. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0078] Through the detailed description of the above embodiments, those skilled in the art can clearly understand that each implementation method can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, including read-only memory (ROM), random access memory (RAM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), one-time programmable read-only memory (OTPROM), electrically-erasable programmable read-only memory (EEPROM), compact disc read-only memory (CD-ROM) or other optical disc storage, disk storage, magnetic tape storage, or any other computer-readable medium that can be used to carry or store data.

[0079] Finally, it should be noted that the multi-parameter independent reconfigurable RF bandpass filter chip disclosed in the embodiments of the present invention is only a preferred embodiment of the present invention and is only used to illustrate the technical solutions of the present invention, not to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A multi-parameter independently reconfigurable RF bandpass filter chip, characterized in that, The wideband filtering module, the lower sideband reconstruction module, the upper sideband reconstruction module and the impedance matching module are connected, and are used for performing wideband filtering processing on the to-be-processed radio frequency signal to obtain the radio frequency filtering signal. The wideband filtering module is provided with a radio frequency input port P1 and a radio frequency output port P2; the radio frequency input port P1 receives an externally input to-be-processed radio frequency signal; and the radio frequency output port P2 outputs a radio frequency filtering signal. The wideband filtering module, the lower sideband reconstruction module, the upper sideband reconstruction module and the impedance matching module are connected, and are used for performing wideband filtering processing on the to-be-processed radio frequency signal to obtain the radio frequency filtering signal. The lower sideband reconstruction module is provided with NA first control ports; the NA first control ports respectively receive NA first control signals input from outside; , and , , , , and are integers greater than 1. The lower sideband reconstruction module is used for adjusting a low-frequency cutoff frequency of the wideband filtering module based on NA first control signals. The upper sideband reconstruction module is provided with NB second control ports; the NB second control ports respectively receive NB second control signals input from outside; , and , and are integers greater than 1. The upper sideband reconstruction module is used for adjusting a high-frequency cutoff frequency of the wideband filtering module based on NB second control signals. The impedance matching module is provided with NC third control ports; the NC third control ports respectively receive NC third control signals input externally; and NC is an integer greater than 1. The impedance matching module is used for performing impedance matching on the wideband filtering module, the lower sideband reconstruction module and the upper sideband reconstruction module based on the NC third control signals.

2. The multi-parameter independently reconfigurable RF bandpass filter chip of claim 1, wherein, The wideband filtering module includes a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a capacitor , a resistor , an inductor , an inductor , an inductor , an inductor , an inductor , and an inductor ; said capacitor , said capacitor , said capacitor , said capacitor , said capacitor , said capacitor , said capacitor , said capacitor , said capacitor and said capacitor are connected in series, in that order. one end of the resistor is connected to one end of the capacitor away from the radio frequency input port P1; the other end of the resistor is grounded; one end of the capacitor is connected to one end of the capacitor away from the radio frequency input port P1; the other end of the capacitor is grounded; said inductance said inductance said inductance said inductance said inductance said capacitance said capacitance said capacitance said capacitance said capacitance in parallel, respectively. said inductor one end is connected with said radio frequency output port P2; the other end of said inductor is connected with one end of said capacitor ; the other end of said capacitor is grounded; The capacitor one end is connected with the radio frequency output port P2; the other end of the capacitor is grounded.

3. The multi-parameter independently reconfigurable RF bandpass filter chip of claim 2, wherein, the capacitance and the inductance in parallel resonance , the capacitance and the inductance in parallel resonance , the capacitance and the inductance in parallel resonance , the capacitance and the inductance in parallel resonance , and the inductance and the capacitance in series resonance are mutually different; , , , and are all higher than the parallel resonance frequency of said capacitance and said inductance .​ 4. The multi-parameter independently reconfigurable RF bandpass filter chip of claim 1, wherein, The lower sideband reconstruction module comprises a first reconstruction unit, a second reconstruction unit, a third reconstruction unit, a fourth reconstruction unit, a fifth reconstruction unit and a sixth reconstruction unit. A first end of the first reconstruction unit is connected to the radio frequency input port P1. a first end of the second reconstruction unit is connected to the capacitor away from the radio frequency input port P1 a first end of the third reconstruction unit is connected to the capacitor away from the radio frequency input port P1; The first end of the fourth reconstruction unit is connected to the capacitor away from the radio frequency input port P1; The first end of the fifth reconstruction unit is connected to the capacitor away from the radio frequency input port P1; The first end of the sixth reconstruction unit is connected to the capacitor away from the radio frequency input port P1; Second ends of the first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit and the sixth reconstruction unit are all grounded. The first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit and the sixth reconstruction unit are respectively provided with 、 、 、 、 and lower sideband control ports; each of the lower sideband control ports is connected to one of the first control ports of the lower sideband reconstruction module.

5. The multi-parameter independently reconfigurable RF bandpass filter chip according to claim 4, wherein, The first reconfiguration unit includes an inductor. ,resistance and A switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the first reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the first reconstruction unit The first terminal of the switched capacitor subunit; in the first reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the first reconfiguration unit. The lower sideband control port; The second reconfiguration unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the second reconstruction unit; the inductor The other end is connected to the resistor one end, and in the second reconstruction unit The first terminal of the switched capacitor subunit; in the second reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the second reconfiguration unit. The lower sideband control port; The third reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the third reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the third reconstruction unit The first terminal of the switched capacitor subunit; in the third reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the third reconfiguration unit. The lower sideband control port; The fourth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the fourth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the fourth reconstruction unit The first terminal of the switched capacitor subunit; in the fourth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the fourth reconfiguration unit. The lower sideband control port; The fifth reconstruction unit includes an inductor. ,resistance and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the fifth reconfiguration unit; the inductor The other end is connected to the resistor One end, and in the fifth reconstruction unit The first terminal of the switched capacitor subunit; in the fifth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the fifth reconfiguration unit. The lower sideband control port; The sixth reconstruction unit includes an inductor. and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the sixth reconstruction unit; the inductor The other end is connected to the sixth reconstruction unit. The first terminal of the switched capacitor subunit; in the sixth reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the control terminals of the sixth reconfiguration unit. The lower sideband control port; the resistance , the resistance , the resistance , the resistance and the other end of the resistance is grounded. Second ends of all the switch-capacitor sub-units in the first reconstruction unit, the second reconstruction unit, the third reconstruction unit, the fourth reconstruction unit, the fifth reconstruction unit and the sixth reconstruction unit are all grounded.

6. The multi-parameter independently reconfigurable RF bandpass filter chip of claim 1, wherein, The upper sideband reconstruction module comprises a seventh reconstruction unit, an eighth reconstruction unit and a ninth reconstruction unit. The first end of the seventh reconfiguration unit is connected to the capacitor away from the radio frequency input port P1; The first end of the eighth reconfiguration unit is connected to the capacitor away from the radio frequency input port P1; The first end of the ninth reconstruction unit is connected to the capacitor away from the radio frequency input port P1 Second ends of the seventh reconstruction unit, the eighth reconstruction unit and the ninth reconstruction unit are all grounded. The seventh reconstruction unit, the eighth reconstruction unit and the ninth reconstruction unit are respectively provided with 、 and upper sideband control ports; each of the upper sideband control ports is connected to one of the second control ports of the upper sideband reconstruction module.

7. The multi-parameter independently reconfigurable RF bandpass filter chip according to claim 6, wherein, The seventh reconstruction unit includes an inductor. and The switched capacitor subunit; the inductor One end of the inductor is connected to the first end of the seventh reconstruction unit; the inductor The other end is connected to the seventh reconstruction unit. The first terminal of the switched capacitor subunit; in the seventh reconfiguration unit The control terminals of each of the switched capacitor subunits are respectively used as the seventh reconfiguration unit. The aforementioned upper sideband control port; The eighth reconstruction unit includes an inductor , a resistor , and one of the switched capacitor sub-units; one end of the inductor is connected to a first end of the eighth reconstruction unit; the other end of the inductor is connected to one end of the resistor , and the first end of one of the switched capacitor sub-units in the eighth reconstruction unit ; The eighth reconfiguration unit is connected with the seventh reconfiguration unit The control end of the switch capacitor subunit is respectively connected with the eighth reconfiguration unit The upper sideband control port The ninth reconstruction unit comprises an inductor , a resistor , and switched capacitor sub-units; one end of the inductor is connected to a first end of the ninth reconstruction unit; the other end of the inductor is connected to one end of the resistor , and the first end of the switched capacitor sub-units in the ninth reconstruction unit; the control ends of the switched capacitor sub-units in the ninth reconstruction unit are respectively used as upper sideband control ports of the ninth reconstruction unit; the resistance and the other end of the resistance is grounded; Second ends of all the switch-capacitor sub-units in the seventh reconstruction unit, the eighth reconstruction unit and the ninth reconstruction unit are all grounded.

8. The multi-parameter independently reconfigurable RF bandpass filter chip of claim 1, wherein, 、 、 、 、 、 and are each equal to 5; and are equal to 3 and 4, respectively.

9. The multi-parameter independently reconfigurable RF bandpass filter chip of claim 1, wherein, The impedance matching module comprises five switch-capacitor sub-units; and NC is 5. The first end and the second end of the first switch capacitor subunit of the impedance matching module are connected to the two ends of the capacitor, respectively. the two ends of the capacitor, respectively. The first end and the second end of the second switch capacitor subunit of the impedance matching module are connected to the two ends of the capacitor, respectively. the two ends of the capacitor, respectively. The first end and the second end of the third switch capacitor subunit of the impedance matching module are connected to the two ends of the capacitor respectively. The first end and the second end of the fourth switch capacitor subunit of the impedance matching module are connected to the two ends of the capacitor respectively. The first end and the second end of the fifth switch capacitor subunit of the impedance matching module are connected to the two ends of the capacitor respectively. Control ends of the five switch-capacitor sub-units of the impedance matching module are respectively connected to the five third control ports of the impedance matching module.

10. The multi-parameter independently reconfigurable RF bandpass filter chip according to claim 5, 7 or 9, characterized in that, The switch-capacitor sub-unit comprises a switch tube and a controlled capacitor. A source of the switch tube is connected to a first end of the switch-capacitor sub-unit. A gate of the switch tube is connected to a control end of the switch-capacitor sub-unit. A drain of the switch tube is connected to one end of a corresponding controlled capacitor; and the other end of the controlled capacitor is connected to a second end of the switch-capacitor sub-unit.

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