Substrate processing system, substrate processing method, program, and storage medium

Abstract

In one exemplary embodiment, a substrate processing system is provided. The substrate processing system includes a process module, a transfer module, an image pickup unit, an extraction unit, a calculation unit, and a transfer control unit. The imaging unit has a field of view including a transport path of the substrate. The extraction unit is configured to extract a first feature pattern and a second feature pattern from an image of a substrate to which substrate processing is applied. The calculation unit is configured to calculate, on the basis of the first feature pattern and the second feature pattern, a positional relationship between the position of the substrate support unit and the position of the substrate when the substrate processing is performed. The conveyance control unit is configured to correct the conveyance position for the conveyance module based on the positional relationship.

Description

Technical Field

[0001] The exemplary embodiments disclosed herein relate to a substrate processing system, substrate processing method, program, and storage medium. Background Technology

[0002] A substrate processing system is used to process substrates. The substrate processing system disclosed in Patent Document 1 includes a process module and a transport module. The process module includes a chamber and a substrate support disposed within the chamber. The transport module transports the substrate onto the substrate support. In the process module, substrate processing is performed on the substrate transported onto the substrate support.

[0003] Prior art literature Patent documents Patent Document 1: Japanese Patent Application Publication No. 2003-264214 Summary of the Invention

[0004] The problem that the invention aims to solve This disclosure provides a technique for reducing the deviation of the substrate's transport position relative to the substrate support.

[0005] Methods for solving problems In one exemplary embodiment, a substrate processing system is provided. The substrate processing system includes a process module, a transport module, an imaging unit, an extraction unit, a calculation unit, and a transport control unit. The process module has a chamber and a substrate support disposed within the chamber. The process module is configured to perform substrate processing on a substrate on the substrate support. The transport module is configured to transport the substrate to a transport position on the substrate support. The imaging unit has a field of view including the transport path of the substrate. The imaging unit is configured to acquire an image of the substrate. The extraction unit is configured to extract a first feature pattern and a second feature pattern from the image of the substrate after substrate processing. The first feature pattern has a center reflecting the center position of the substrate. The second feature pattern has a center reflecting the center position of the substrate support during substrate processing. The calculation unit is configured to calculate the positional relationship between the position of the substrate support and the position of the substrate during substrate processing based on the first and second feature patterns. The transport control unit is configured to correct the transport position of the transport module based on the positional relationship.

[0006] Invention Effects According to an exemplary embodiment, the deviation of the substrate's transport position relative to the substrate support can be reduced. Attached Figure Description

[0007] Figure 1 This is a diagram illustrating a substrate processing system according to an exemplary embodiment.

[0008] Figure 2This is a diagram illustrating an example of the configuration of a plasma substrate processing system.

[0009] Figure 3 This is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing device.

[0010] Figure 4 This is a top view of an electrostatic chuck according to an exemplary embodiment.

[0011] Figure 5 yes Figure 4 A partially enlarged view of an exemplary embodiment of the electrostatic chuck shown.

[0012] Figure 6 This is a partially enlarged cross-sectional view of the substrate and electrostatic chuck involved in an exemplary embodiment.

[0013] Figure 7 This is a cross-sectional view of a substrate inspection module according to an exemplary embodiment.

[0014] Figure 8 This is a diagram that schematically illustrates an image of a substrate involved in an exemplary embodiment after being processed by the applied substrate.

[0015] Figure 9 This is a diagram that schematically illustrates an image of a substrate involved in another exemplary embodiment after being processed by the applied substrate.

[0016] Figure 10 This is a diagram that schematically illustrates an image of a substrate involved in another exemplary embodiment after being processed by the applied substrate.

[0017] Figure 11 This is a diagram illustrating an exemplary embodiment of the positional relationship between the center position of the substrate and the center position of the substrate support portion during substrate processing.

[0018] Figure 12 This is a diagram illustrating the configuration of the camera unit according to another exemplary embodiment.

[0019] Figure 13 This is a diagram that schematically illustrates an image of a substrate involved in another exemplary embodiment after being processed by the applied substrate.

[0020] Figure 14 This is a diagram illustrating an example of the process of calculating the positional relationship between the position of the substrate and the position of the pattern.

[0021] Figure 15 This is another example of the process of calculating the positional relationship between the position of the substrate and the position of the pattern.

[0022] Figure 16This is a flowchart illustrating a substrate processing method according to an exemplary embodiment. Detailed Implementation

[0023] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or corresponding parts are given the same reference numerals.

[0024] Figure 1 This is a diagram illustrating a substrate processing system according to an exemplary embodiment. For example... Figure 1 As shown, the substrate processing system PS includes at least one transport module, at least one process module, a camera unit 60, and a transport control unit CU. The substrate processing system PS may also include multiple process modules PM1 to PM12 as at least one process module, and multiple transport modules TM1 and TM2 as at least one transport module. The substrate processing system PS may also further include a substrate inspection module CM, load entry points LP1 to LP4, an alignment device AN, load locking modules LL1 and LL2, and a memory SR.

[0025] The substrate processing system PS may also include a loading module LM. The loading module LM contains a chamber. The pressure within the chamber of the loading module LM is set to atmospheric pressure. The loading module LM may also have an FFU (Fan Filter Unit). The loading module LM is, for example, an EFEM (Equipment Front-End Module). The loading module LM is positioned between each of the loading inlets LP1-LP4 and each of the loading locking modules LL1, LL2. The loading inlets LP1-LP4 are arranged along one of a pair of edges along the long side of the loading module LM. The loading locking modules LL1, LL2 are arranged along the other pair of edges along the long side of the loading module LM. Each of the loading inlets LP1-LP4 is configured to support a cassette CST on which it is mounted. The cassette CST is a container that holds multiple substrates W. The cassette CST is, for example, a FOUP (Front-Opening Unified Pod).

[0026] The loading module LM includes a transport robot TR3. The transport robot TR3 is disposed within the chamber of the loading module LM. The transport robot TR3 may also include a multi-joint arm AR31 and a picker FK31. The picker FK31 is mounted at the front end of the multi-joint arm AR31 and is configured to support the substrate W placed thereon. The transport robot TR3 transports the substrate W based on motion commands output by the transport control unit CU (described later). The transport robot TR3 transports the substrate W between any two of the following: the box CST placed on at least one of the loading inlets LP1 to LP4, the loading locking modules LL1 and LL2, the aligner AN, the storage unit SR, and the substrate inspection module CM (described later).

[0027] The aligner AN is disposed along one of a pair of edges of the loading module LM along its short side. The aligner AN may also be disposed along an edge of the loading module LM along its long side. Furthermore, the aligner AN may be disposed within a cavity of the loading module LM. The aligner AN includes a support platform, an optical sensor, etc. The support platform of the aligner AN is rotatable, supporting the substrate W placed thereon. The aligner AN uses the optical sensor to detect the angular position of a mark (e.g., a notch) on the substrate W on the support platform and the center position of the substrate W on the support platform. The transport control unit CU controls the rotation of the support platform of the aligner AN to correct the angular position of the mark (e.g., a notch) on the substrate W on the support platform to a reference angular position, thereby correcting the deviation of the angular position of the substrate W. Furthermore, the transport control unit CU controls the position of the pickup FK31 when the substrate W is received from the aligner AN onto the pickup FK31 in order to position the center of the substrate W at a predetermined position.

[0028] The storage device SR is configured along the long side edge of the loading module LM. The storage device SR can also be configured along the short side edge of the loading module LM. Alternatively, the storage device SR can be located inside the loading module LM. The storage device SR is configured to house the substrate W.

[0029] The substrate inspection module CM is configured along the long side edge of the loading module LM. Alternatively, the substrate inspection module CM can be configured along the short side edge of the loading module LM. Furthermore, the substrate inspection module CM can also be located inside the loading module LM. Figure 1 In the example shown, the camera unit 60 is included in the substrate inspection module CM. The substrate inspection module CM is configured to perform image inspection on the substrate W. Details regarding the substrate inspection module CM will be described later.

[0030] Each of the loading locking modules LL1 and LL2 is configured between the transport module TM1 and the loading module LM. Each of the loading locking modules LL1 and LL2 provides a pre-pressure reduction chamber. Each of the loading locking modules LL1 and LL2 is connected to the loading module LM via a gate valve G3. Each of the loading locking modules LL1 and LL2 is connected to the transport module TM1 via a gate valve G2.

[0031] In one embodiment, each of the transport modules TM1 and TM2 may also include a chamber. Figure 1In the example shown, each of the transport modules TM1 and TM2 is configured to transport a depressurized space substrate W within its chamber. The chamber of transport module TM1 is connected to each of the loading and locking modules LL1 and LL2 via gate valve G2. The chamber of transport module TM1 is connected to process modules PM1 through PM6 via gate valve G1. The chamber of transport module TM1 is connected to the chamber of transport module TM2. The chamber of transport module TM2 is connected to process modules PM7 through PM12 via gate valve G1.

[0032] In one embodiment, the transport module TM1 may also include a transport robot TR1 disposed within its chamber. The transport robot TR1 may also include articulated arms AR11 and AR12 and pickers FK11 and FK12. Picker FK11 is mounted at the front end of the articulated arm AR11 and is configured to support the substrate W placed thereon. Picker FK12 is mounted at the front end of the articulated arm AR12 and is configured to support the substrate W placed thereon. The transport robot TR1 transports the substrate W based on motion commands output by the transport control unit CU (described later). The transport robot TR1 holds the substrate W using pickers FK11 and FK12. The transport robot TR1 transports the substrate W between any two of the following paths: loading locking modules LL1 and LL2, process modules PM1 to PM6, the chamber of transport module TM1, and the chambers of transport module TM1 and transport module TM2.

[0033] In one embodiment, the transport module TM2 includes a transport robot TR2 disposed within its chamber. The transport robot TR2 may also include articulated arms AR21 and AR22 and pickers FK21 and FK22. Picker FK21 is mounted at the front end of articulated arm AR21 and configured to support the substrate W placed thereon. Picker FK22 is mounted at the front end of articulated arm AR22 and configured to support the substrate W placed thereon. The transport robot TR2 transports the substrate W based on motion commands output by the transport control unit CU (described later). The transport robot TR2 holds the substrate W using pickers FK21 and FK22. The transport robot TR2 transports the substrate W along the path between the chambers of transport module TM1 and transport module TM2, between process modules PM7 to PM12, and between any two chambers of transport module TM2.

[0034] In one embodiment, each of the process modules PM1 to PM12 is configured to perform a dedicated process on the substrate W. At least one of the process modules PM1 to PM12 may also be a substrate processing system such as the plasma processing apparatus 1 described later.

[0035] The transport control unit (CU) is, for example, a computer. The transport control unit (CU) can consist of a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read-Only Memory), and auxiliary storage devices. The CPU operates based on programs stored in the ROM or auxiliary storage devices, controlling various parts of the substrate processing system (PS).

[0036] Furthermore, the substrate processing system PS is not necessarily limited to Figure 1 The structure shown. For example, the number of process modules and / or transport modules in a substrate processing system can also be related to... Figure 1 The differences are as shown. For example, the number of loading ports can be more than five, and the number of loading ports can be arbitrary. Furthermore, the substrate processing system can also be a system that connects multiple module groups to the loading module (a so-called loader-type system), each of which contains a process module and a loading lock module. Additionally, the substrate processing system can also be a system in which two or more process modules are arranged and connected around the transport module in a manner that surrounds the transport module (a so-called cluster-type system).

[0037] The following is for reference Figure 2 and Figure 3 . Figure 2 The plasma processing system shown is an example of a substrate processing system (PS). Figure 3 An example of the plasma processing apparatus shown is used as at least one of the process modules PM1 to PM12.

[0038] Figure 2 This is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing system. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 described later, and the gas outlet is connected to the exhaust system 40 described later. The substrate support 11 is disposed within the plasma processing space and has a substrate support surface 11a for supporting a substrate.

[0039] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (electron-cyclotron-resonance plasma), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (alternating current) plasma generation units and DC (direct current) plasma generation units, can also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (radio frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0040] The control unit 2 processes computer-executable instructions for causing the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control various elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may also include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can be configured to read a program from the storage unit 2a2 and execute the read program to perform various control actions. The program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The retrieved program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may also be a CPU (Central Processing Unit). The storage unit 2a2 may also include RAM (random access memory), ROM (read-only memory), HDD (hard disk drive), SSD (solid-state drive), or a combination thereof. The communication interface 2a3 may also communicate with the plasma processing device 1 via a communication line such as a LAN (local area network).

[0041] The substrate processing system PS includes an extraction unit 2b1 and a calculation unit 2b2. Figure 2In the example shown, the extraction unit 2b1 and the calculation unit 2b2 are included in the processing unit 2a1. Details regarding the extraction unit 2b1 and the calculation unit 2b2 will be described later. The extraction unit 2b1 and the calculation unit 2b2 may also be included in the transport control unit CU. The control unit 2 may also function as the transport control unit CU.

[0042] The following describes a configuration example of a capacitively coupled plasma processing apparatus 1, as an example of plasma processing apparatus 1. Figure 3 This is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing device.

[0043] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0044] The substrate support portion 11 includes a main body portion 5 and a ring assembly 112. The main body portion 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 5b of the main body portion 5 surrounds the central region 5a of the main body portion 5 in a plan view. The substrate W is disposed on the central region 5a of the main body portion 5, and the ring assembly 112 is disposed on the annular region 5b of the main body portion 5 to surround the substrate W on the central region 5a of the main body portion 5. Therefore, the central region 5a includes a substrate support surface 11a that supports the substrate W placed thereon, and the annular region 5b includes an annular support surface that supports the ring assembly 112 placed thereon.

[0045] In one embodiment, the main body 5 includes a base 50 and an electrostatic chuck 51. The base 50 includes a conductive component. The conductive component of the base 50 functions as a lower electrode. The electrostatic chuck 51 is disposed above the base 50. The electrostatic chuck 51 includes a ceramic component 51a and an electrostatic electrode 51b disposed within the ceramic component 51a. The ceramic component 51a has a central region 5a. In one embodiment, the ceramic component 51a also has an annular region 5b. Furthermore, other components surrounding the electrostatic chuck 51, such as an annular electrostatic chuck or an annular insulating component, may also have an annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 51 and the annular insulating component. In addition, at least one RF / DC electrode may be disposed within the ceramic component 51a, which is coupled to the RF power supply 31 and / or the DC power supply 32 described later. In this case, at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal described later are supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as the bias electrode. Furthermore, the conductive components of the base 50 and the at least one RF / DC electrode can also function as multiple lower electrodes. Additionally, the electrostatic electrode 51b can also function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0046] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive material or an insulating material, and the cover rings are formed of an insulating material.

[0047] Furthermore, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 51, the ring assembly 112, and the substrate to a target temperature. The temperature control module may also include a heater, a heat-conducting medium, a flow path 50a, or a combination thereof. A heat-conducting fluid, such as brine or gas, flows in the flow path 50a. In one embodiment, the flow path 50a is formed within the base 50, and one or more heaters are disposed within the ceramic component 51a of the electrostatic chuck 51. Additionally, the substrate support 11 may also include a heat-conducting gas supply section configured to supply heat-conducting gas to the gap between the back surface of the substrate W and the central region 5a.

[0048] The spray head 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the multiple gas inlets 13c. Furthermore, the spray head 13 includes at least one upper electrode. In addition to the spray head 13, the gas inlet unit may also include one or more side gas injectors (SGIs) installed at one or more openings formed on the sidewall 10a.

[0049] The gas supply unit 20 may also include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from corresponding gas sources 21 to spray heads 13 via corresponding flow controllers 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow rate of the at least one type of processing gas.

[0050] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one type of processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, attracting the ionic components in the generated plasma to the substrate W.

[0051] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, configured to generate a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may also be configured to generate multiple source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0052] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a lower frequency than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may also be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0053] Furthermore, the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0054] In various embodiments, the first and second DC signals can also be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can be positive or negative. Furthermore, the sequence of voltage pulses can also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. In addition, the first and second DC generation units 32a and 32b can also be provided together with the RF power supply 31, and the first DC generation unit 32a can also replace the second RF generation unit 31b.

[0055] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted via the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0056] The following is for reference Figures 4 to 6 . Figure 4 This is a top view of an electrostatic chuck according to an exemplary embodiment. Figure 5 yes Figure 4 A partially enlarged view of an exemplary embodiment of the electrostatic chuck shown. Figure 6 This is a partially enlarged cross-sectional view of the substrate and electrostatic chuck involved in an exemplary embodiment.

[0057] In one embodiment, the electrostatic chuck 51 may also include a first protrusion 51c (or a sealing ring) and a plurality of second protrusions 51d (or dots). The first protrusion 51c and the plurality of second protrusions 51d are included in the surface structure of the electrostatic chuck 51. The first protrusion 51c has an annular shape. The first protrusion 51c has an upper surface that forms part of the substrate support surface 11a. Figure 4 and Figure 6 As shown, the first protrusion 51c may also have an annular shape along the outer edge of the substrate support surface 11a. In this case, the pattern of the first protrusion 51c is an annular shape along the outer edge of the substrate support surface 11a.

[0058] Each of the plurality of second protrusions 51d has an upper surface that forms part of the substrate support surface 11a. The plurality of second protrusions 51d are disposed inside the first protrusion 51c. Figure 4 In the example shown, multiple second protrusions 51d are disposed on the inner side of the outer edge of the substrate support surface 11a. Furthermore, in Figure 4 In the diagram, each of the multiple second protrusions 51d is omitted. (See figure.) Figure 5 As shown, the plurality of second protrusions 51d can also form a pattern centered on the center position 11c of the substrate support portion 11. Figure 5 In the example shown, the plurality of second protrusions 51d are arranged at approximately equal intervals along a circumference centered on the center position 11c of the substrate support portion 11. The plurality of second protrusions 51d may also be arranged along a plurality of concentric circles centered on the center position 11c of the substrate support portion 11, or along a plurality of concentric polygons centered on the center position 11c of the substrate support portion 11.

[0059] In one embodiment, the substrate support 11 may also include a plurality of gas holes 5c. The plurality of gas holes 5c are included in the surface structure of the electrostatic chuck 51. Figure 4In the example shown, the plurality of gas holes 5c consists of 12 gas holes 5c. The plurality of gas holes 5c communicate with the gap between the substrate W and the electrostatic chuck 51. The gap between the substrate W and the electrostatic chuck 51 corresponds to the gap between the back surface of the substrate W and the central region 5a as described above. In one example, each of the plurality of gas holes 5c is formed by a through hole of the electrostatic chuck 51 and a through hole of the base 50 that are interconnected. The heat-conducting gas supply unit can be configured to supply heat-conducting gas to the gap between the substrate W and the electrostatic chuck 51 through the plurality of gas holes 5c.

[0060] like Figure 4 As shown, multiple gas holes 5c can also be formed into a pattern centered on the center position 11c of the substrate support portion 11. Figure 4 In the example shown, a plurality of gas holes 5c are arranged at the vertices of a hexagon centered at the center position 11c of the substrate support portion 11. In this case, the pattern of the plurality of gas holes 5c includes hexagons. More specifically, six of the twelve gas holes 5c are arranged at the vertices of a first regular hexagon, and the other six of the twelve gas holes 5c are arranged at the vertices of a second regular hexagon located inside the first regular hexagon.

[0061] In one embodiment, the substrate support 11 may also include a plurality of pin holes 5d for insertion of a plurality of lifting pins for the substrate W. The plurality of pin holes 5d are contained within the surface structure of the electrostatic chuck 51. Figure 4 In the example shown, the plurality of pin holes 5d consists of three pin holes 5d. In one example, each of the plurality of pin holes 5d is formed by a through hole of an interconnected electrostatic chuck 51 and a through hole of a base 50. Each of the plurality of pin holes 5d is configured to provide a lifting pin for raising and lowering the substrate W.

[0062] like Figure 4 As shown, multiple pin holes 5d can also form a regular pattern centered on the center position 11c of the substrate support portion 11. Figure 4 In the example shown, multiple pin holes 5d are arranged at the vertices of an equilateral triangle centered at the center position 11c of the substrate support portion 11. In this case, the pattern of the multiple pin holes 5d comprises triangles.

[0063] As described above, the plasma processing apparatus 1 is configured to perform substrate processing on the substrate W on the substrate support 11. In one example, the substrate support 11, the electrostatic chuck 51, and the substrate W are in the shape of a circular plate. The substrate processing may also be an etching process or a process of forming a deposit on the surface of the substrate W (e.g., plasma CVD). Figure 6The example shown illustrates a pattern of deposit Wa formed on the upper surface of substrate W by substrate treatment and a pattern of deposit Wb formed on the lower surface of substrate W by substrate treatment. The pattern of deposit Wb has an inner edge on the lower surface of substrate W relative to the edge of substrate W.

[0064] The substrate W is transported by the transport module TM1 or TM2 to a transport position on the substrate support 11. Then, in the plasma processing apparatus 1, substrate processing is performed on the substrate W on the electrostatic chuck 51. In one embodiment, the substrate W after substrate processing is transported by the transport module TM1 or TM2 from the transport position on the substrate support 11 to the substrate inspection module CM.

[0065] The following is for reference Figure 7 . Figure 7 This is a cross-sectional view of a substrate inspection module according to an exemplary embodiment. Figure 7 In the example shown, the substrate inspection module CM includes a housing 6. (As shown...) Figure 7 As shown, the substrate inspection module CM may also include a camera unit 60, a substrate suction cup 61, a guide rail 62, a light source 63, and a semi-reflective mirror 64. Each of the camera unit 60, substrate suction cup 61, guide rail 62, light source 63, and semi-reflective mirror 64 is disposed within the housing 6.

[0066] The substrate suction cup 61 is configured to support the substrate W placed thereon. The substrate suction cup 61 is disposed on a guide rail 62. The guide rail 62 is configured to move the substrate suction cup 61, which supports the substrate W, within the housing 6. Figure 7 In the example shown, the guide rail 62 is configured to move the substrate W, supported by the substrate chuck 61, from a first position 6a to a second position 6b along a transport path P. The first position 6a is adjacent to one end of the guide rail 62. The second position 6b is adjacent to the other end of the guide rail 62. In one example, the distance between the first position 6a and the second position 6b is at least greater than the diameter of the substrate W. The transport path P of the substrate W can also be along a straight line connecting one end of the guide rail 62 to the other end of the guide rail 62.

[0067] The imaging unit 60 has a field of view that includes the transport path of the substrate W. The imaging unit 60 is configured to acquire an image of the substrate W. In one embodiment, the imaging unit 60 may also be a line scan camera. The direction of the transport path P in the field of view of the imaging unit 60 is orthogonal to the long side direction of the line scan camera. Figure 7In the example shown, the imaging unit 60 acquires an image of the substrate W by acquiring light L, which is irradiated by the light source 63 and reflected by the upper surface of the substrate W, via a semi-reflective mirror 64. The light source 63 and the semi-reflective mirror 64 can also be positioned above the transport path P. The imaging unit 60 can also be positioned horizontally opposite the semi-reflective mirror 64. In one example, the light source 63 irradiates light L onto the substrate W as it moves along the transport path P from position 6a to position 6b. The light L reflected by the upper surface of the substrate W is reflected horizontally by the semi-reflective mirror 64. The light L reflected horizontally by the semi-reflective mirror 64 is received by the imaging unit 60.

[0068] The following is for reference Figures 8 to 10 . Figure 8 This is a diagram that schematically illustrates an image of a substrate involved in an exemplary embodiment after substrate processing. Figure 9 This is a diagram that schematically illustrates an image of a substrate involved in another exemplary embodiment after substrate processing. Figure 10 This is a diagram that schematically illustrates an image of a substrate involved in another exemplary embodiment after substrate processing.

[0069] The extraction unit 2b1 is configured to extract a first feature pattern and a second feature pattern from the image of the substrate W after substrate processing. Figure 8 In the example shown, the extraction unit 2b1 is configured to extract a first feature pattern 71 and a second feature pattern 72 from the image 7 of the substrate W after substrate processing. (Refer to the following...) Figure 8 This illustrates an exemplary implementation of extracting the first feature pattern 71 and the second feature pattern 72 from image 7.

[0070] The first feature pattern 71 has a center that reflects the center position of the substrate W. In one embodiment, the first feature pattern 71 may also reflect the edge 70 of the substrate W. In one example, the extraction unit 2b1 extracts the first feature pattern 71 based on the brightness difference between the background BK of the substrate W and the edge 70 in the image 7. In one embodiment, the extraction unit 2b1 may also extract the first feature pattern 71 by binarizing the image 7. By binarizing, the pixel values ​​of the background BK region of the substrate W in the image 7 are converted to values ​​different from the pixel values ​​of the region of the substrate W in the image 7, so the edge 70 of the substrate W can be extracted as the first feature pattern 71 from the binarized image.

[0071] The second feature pattern 72 has a center that reflects the center position 11c of the substrate support portion 11 during substrate processing. In one embodiment, the second feature pattern 72 may also reflect the pattern of the surface structure of the electrostatic chuck 51. The second feature pattern 72 may have a center that reflects the center position of the electrostatic chuck 51 during substrate processing. In one embodiment, the extraction unit 2b1 may also be configured to extract the second feature pattern 72 based on the difference between the image 7 and the image obtained by blurring the image 7. Blurring refers to the process of averaging one pixel among the plurality of pixels constituting the image and the pixels adjacent to that pixel.

[0072] In one embodiment, the second feature pattern 72 may also reflect the pattern of the first protrusion 51c and / or the plurality of second protrusions 51d of the electrostatic chuck 51. In one embodiment, the second feature pattern 72 may also reflect the pattern of the deposit Wa formed on the upper surface of the substrate W. In the substrate W, a temperature difference may occur between a first region located on the first protrusion 51c and / or the plurality of second protrusions 51d and a second region not located on the first protrusion 51c and / or the plurality of second protrusions 51d. A difference in the amount of deposit Wa corresponding to this temperature difference may occur between the deposit Wa formed on the upper surface of the first region and the deposit Wa formed on the upper surface of the second region. Therefore, the second feature pattern 72 may reflect this difference in the amount of deposit Wa. Figure 8 In the example shown, the second feature pattern 72 reflects the pattern of the deposit Wa formed on the upper surface of the substrate W in a manner that reflects the pattern 751d of the plurality of second protrusions 51d.

[0073] The calculation unit 2b2 is configured to calculate the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing, based on the first feature pattern and the second feature pattern. Figure 8 In the example shown, the calculation unit 2b2 is configured to calculate the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing based on the first feature pattern 71 and the second feature pattern 72.

[0074] In one embodiment, the calculation unit 2b2 may also be configured to calculate the positional relationship between the center position 11c of the substrate support portion 11 and the center position of the substrate W during substrate processing, based on a first center position 71a determined from the first feature pattern 71 and a second center position 72a determined from the second feature pattern 72. In one example, the first feature pattern 71 reflects the edge 70 of the substrate W, therefore the center position of the substrate W is calculated as the first center position 71a determined from the first feature pattern 71.

[0075] exist Figure 8In the example shown, the second feature pattern 72 reflects the pattern 751d of a plurality of second protrusions 51d, and is arranged at approximately equal intervals along a circle whose center reflects the center position 11c of the substrate support portion 11 during substrate processing. Therefore, the center position 11c of the substrate support portion 11 during substrate processing is calculated as the center position of this circle, i.e., the second center position 72a.

[0076] The following is for reference Figure 9 This section describes another exemplary embodiment for extracting the first feature pattern 71 and the second feature pattern 72A and / or the second feature pattern 72B from image 7A. In the following description, this other exemplary embodiment is explained based on the differences between it and the above exemplary embodiment for extracting the first feature pattern 71 and the second feature pattern 72 from image 7.

[0077] The second characteristic pattern 72A can also reflect the pattern of the multiple gas holes 5c of the electrostatic chuck 51. In the substrate W, a temperature difference may occur between a first region located on the multiple gas holes 5c and a second region not located on the multiple gas holes 5c. A difference in the amount of deposit Wa corresponding to this temperature difference may occur between the deposit Wa formed on the upper surface of the first region and the deposit Wa formed on the upper surface of the second region. Therefore, the second characteristic pattern 72A can reflect this difference in the amount of deposit Wa. Figure 9 In the example shown, the second feature pattern 72A reflects the pattern of the deposit Wa formed on the upper surface of the substrate W in a manner that reflects the pattern 75c of multiple gas pores 5c.

[0078] exist Figure 9 In the example shown, the second feature pattern 72A reflects the pattern 75c of a plurality of gas holes 5c, and is positioned at the vertex of a hexagon whose center reflects the center position 11c of the substrate support portion 11 during substrate processing. In one example, this hexagon is a regular hexagon. The center position 11c of the substrate support portion 11 during substrate processing is calculated as the center position of this hexagon, i.e., the second center position 72a.

[0079] In one embodiment, the second feature pattern 72B may also reflect the pattern of the plurality of pin holes 5d of the electrostatic chuck 51. In the substrate W, a temperature difference may occur between a first region located on the plurality of pin holes 5d and a second region not located on the plurality of pin holes 5d. A difference in the amount of deposit Wa corresponding to this temperature difference may occur between the deposit Wa formed on the upper surface of the first region and the deposit Wa formed on the upper surface of the second region. Therefore, the second feature pattern 72B can reflect this difference in the amount of deposit Wa. Figure 9In the example shown, the second feature pattern 72B reflects the pattern of deposit Wa formed on the upper surface of the substrate W in a manner that reflects the pattern 75d of multiple pin holes 5d.

[0080] exist Figure 9 In the example shown, the second feature pattern 72B reflects the pattern 75d of the plurality of pin holes 5d, and is positioned at the vertex of a triangle that reflects the center position 11c of the substrate support portion 11 during substrate processing. In one example, this triangle is an equilateral triangle. The center position 11c of the substrate support portion 11 during substrate processing is calculated as the center position of this triangle, i.e., the second center position 72a.

[0081] The following is for reference Figure 10 This section describes another exemplary embodiment of extracting the first feature pattern 71 and the second feature pattern 72C from image 7C. In the following description, this further exemplary embodiment is explained based on the differences between it and the above exemplary embodiment of extracting the first feature pattern 71 and the second feature pattern 72C from image 7.

[0082] The second feature pattern 72C may also reflect the pattern of the first protrusion 51c and / or the plurality of second protrusions 51d of the electrostatic chuck 51. In one embodiment, the second feature pattern 72C may also reflect a pattern formed on the upper surface of the substrate W by an etching process that serves as a substrate treatment. In the substrate W, a temperature difference may occur between a first region located on the first protrusion 51c and / or the plurality of second protrusions 51d and a second region not located on the first protrusion 51c and / or the plurality of second protrusions 51d. A difference in etching rate corresponding to this temperature difference may occur between the etching rate of the first region and the etching rate of the second region. Therefore, the second feature pattern 72C may reflect the difference in etching amount. Figure 10 In the example shown, the second feature pattern 72C reflects a pattern formed on the upper surface of the substrate W by etching in a manner that reflects the pattern 751c of the first protrusion 51c.

[0083] exist Figure 10In the example shown, the second feature pattern 72C reflects the pattern 751c of the first protrusion 51c and has an annular shape whose center reflects the center position 11c of the substrate support portion 11 during substrate processing. The pattern 751c of the first protrusion 51c may also have an annular shape along the outer edge of the substrate support surface 11a, and the second feature pattern 72C may also reflect this annular shape. The center position 11c of the substrate support portion 11 during substrate processing is calculated as the center position of this annular shape of the second feature pattern 72C, i.e., the second center position 72a. Alternatively, the pattern of the first protrusion 51c may be substituted, or the center position 11c of the substrate support portion 11 during substrate processing may be calculated based on the second feature pattern 72C, which reflects the patterns of a plurality of second protrusions 51d, in addition to the pattern of the first protrusion 51c.

[0084] Figure 11 This diagram illustrates an exemplary embodiment of the positional relationship between the center position of the substrate and the center position of the pattern. The transport control unit CU is configured to correct the transport position for transport modules TM1 and TM2 based on the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing. In one embodiment, the transport control unit CU may also be configured to correct the transport position for transport modules TM1 and TM2 based on the positional relationship between the center position 11c of the substrate support 11 and the center position of the substrate W during substrate processing. In one example, the transport control unit CU is configured to correct the transport position for transport modules TM1 and TM2 so that the center position 11c of the substrate support 11 overlaps with the center position of the substrate W during substrate processing.

[0085] exist Figure 11 In the example shown, the position of the second center position 72a in an XY Cartesian coordinate system centered on the first center position 71a is illustrated. In the X-axis direction, the second center position 72a deviates by X1 relative to the first center position 71a. In the Y-axis direction, the second center position 72a deviates by Y1 relative to the first center position 71a. In this case, the transport control unit CU can also correct the transport position on the substrate support 11 by X1 in the X-axis direction and by Y1 in the Y-axis direction.

[0086] Figure 12 This diagram illustrates the configuration of a camera unit according to another exemplary embodiment. The substrate inspection module CM may also include a camera unit 65. The camera unit 65 has a field of view including the edge of the substrate W. The camera unit 65 is configured to acquire an image of the substrate W. Figure 12 In the example shown, the camera unit 65 is positioned below the substrate W supported on the substrate suction cup 61.

[0087] The substrate chuck 61 is configured to allow the substrate W supported on it to rotate. Figure 12 In the example shown, viewed from above, the substrate suction cup 61 rotates the substrate W supported on it clockwise. The camera unit 65 may also have a field of view capable of capturing a portion of the edge of the substrate W. In one example, the camera unit 65 may also be a line scan camera. The long side direction of this line scan camera is orthogonal to the tangential direction of the substrate W. In this case, by rotating the substrate W via the substrate suction cup 61, the camera unit 65 is able to include the entire circumference of the edge of the substrate W in its field of view.

[0088] Figure 13 This is a diagram that schematically illustrates an image of a substrate involved in another exemplary embodiment after substrate processing. Figure 13 Image 7D shown is an image acquired by the imaging unit 65 from a substrate W rotating on a substrate chuck 61. In image 7D, the image of the substrate W is acquired in a strip format. See below for reference. Figure 13 This section describes another exemplary embodiment of extracting the first feature pattern 71 and the second feature pattern 72D from image 7D. In the following description, this further exemplary embodiment is explained based on the differences between it and the above exemplary embodiment of extracting the first feature pattern 71 and the second feature pattern 72D from image 7D.

[0089] In one embodiment, the second feature pattern 72D may also reflect the pattern of the deposit Wb. The deposit Wb is formed on the lower surface of the substrate W through substrate processing. As described above, the pattern of the deposit Wb has an inner edge on the lower surface of the substrate W relative to the edge of the substrate W. This inner edge can be reflected on the lower surface of the substrate W by the outer edge of the first protrusion 51c during substrate processing. In one embodiment, the extraction unit 2b1 may also be configured to extract the second feature pattern 72D based on the difference between the image 7D and the image of the substrate W before substrate processing.

[0090] The substrate W may also have a notch Wn at its edge. The notch Wn can be, for example, a notch (a U-shaped, V-shaped, or similar groove). Figure 13 As shown, the camera unit 65 acquires the image 7Wn of the cutout portion Wn as part of the image 7D. The camera unit 65 is configured to acquire the image 7D over the entire circumference of the edge of the substrate W, based on the image 7Wn of the cutout portion Wn.

[0091] Figure 14 This is a diagram illustrating an example of the process of calculating the positional relationship between the position of the substrate and the position of the pattern. Figure 14 The image 7E shown is an image transformed from image 7D into an image where the substrate W in image 7D is circular. Figure 15 This is another example of the process of calculating the positional relationship between the position of the substrate and the position of the pattern.

[0092] In one embodiment, the calculation unit 2b2 may also be configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 on each of three or more radial directions on the edge 70 of the first feature pattern 71. The calculation unit 2b2 may also be configured to calculate the positional relationship between the position of the substrate support portion 11 and the position of the substrate W during substrate processing based on the distance on each of the three or more radial directions.

[0093] exist Figure 14 In the example shown, the calculation unit 2b2 is configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 on each of the eight radial directions of the edge 70. The eight radial directions are composed of radial directions D1, D2, D3, D4, D5, D6, D7, and D8. The angle between any two adjacent radial directions D1 to D8 is 45 degrees. Radial direction D1 and radial direction D5 are 180 degrees apart. Radial direction D5 corresponds to the position of the image 7Wn of the cutout portion Wn. Radial direction D2 and radial direction D6 are 180 degrees apart. Radial direction D3 and radial direction D7 are 180 degrees apart. Radial direction D4 and radial direction D8 are 180 degrees apart.

[0094] In one embodiment, the calculation unit 2b2 may also be configured to calculate the average distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71. Figure 14 In the example shown, the calculation unit 2b2 is configured to calculate the average distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 based on each of radial distances D2, D4, D6, and D8. The transport control unit CU can also be configured to correct the transport position for the transport module TM based on this average distance.

[0095] Figure 15This diagram illustrates another example of the process for calculating the positional relationship between the substrate position and the pattern position. In one embodiment, the calculation unit 2b2 may also be configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 on each of three or more radial directions. The calculation unit 2b2 may also calculate a first angle and a second angle. The first angle is the angle between a first radial direction and a second radial direction different from the first radial direction. The second angle is the angle between the second radial direction and a third radial direction different from the second radial direction. The calculation unit 2b2 may also use the distance, the first angle, and the second angle on each of the three or more radial directions to calculate a sine wave function. The sine wave function interpolates the distance between the inner edge and the edge on the radial direction within the first angle and the distance between the inner edge and the edge on the radial direction within the second angle. The calculation unit 2b2 may also be configured to correct the distance on each of the three or more radial directions using the sine wave function.

[0096] exist Figure 15 In the example shown, the calculation unit 2b2 is configured to calculate the distance between the inner edge of the second feature pattern 72D and the edge 70 of the first feature pattern 71 in each of the radial directions D1 to D4 and D6 to D8. Figure 15 Each of No. 1 to No. 4 and No. 6 to No. 8 represents the distance on each of the radial distances D1 to D4 and D6 to D8. Furthermore, the distance on radial distance D5 is not measured due to interference with the image 7Wn of the cutout portion Wn.

[0097] exist Figure 15 In the example shown, the angle between any two adjacent radials among the eight radials D1 to D8 is 45 degrees. Therefore, the calculation unit 2b2 calculates the sine wave function based on this distance and the 45-degree angle on each of the radials D1 to D4 and D6 to D8. In one example, the calculation unit 2b2 can also calculate the sine wave function using the least squares method based on this distance and the 45-degree angle on each of the radials D1 to D4 and D6 to D8. This distance on each of the radials D1 to D4 and D6 to D8 can be corrected by the sine wave function. The calculation unit 2b2 can also be configured to calculate the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing based on the corrected distance and the 45-degree angle.

[0098] Figure 16 This is a flowchart illustrating a substrate processing method according to an exemplary embodiment. See below for reference. Figure 16This section illustrates an example of executing a substrate processing method (hereinafter referred to as "Method MT"). Method MT is executed using a substrate processing system PS. The components of the substrate processing system PS and the control of each part in Method MT are also described below. Furthermore, Method MT can also be executed using a substrate processing system other than the substrate processing system PS.

[0099] Method MT begins with step ST1. In step ST1, the substrate W is transported to a transport position on the substrate support 11 disposed within the chamber 10. In one example, the transport control unit CU may also be configured to control transport modules TM1 and TM2 to transport the substrate W to the transport position on the substrate support 11 disposed within the chamber 10.

[0100] Step ST2 is performed after step ST1. In step ST2, substrate processing is performed on the substrate W on the substrate support 11. In one example, substrate processing may also be etching or forming a deposit on the surface of the substrate W.

[0101] Step ST3 is performed after step ST2. In step ST2, the substrate W, after undergoing substrate processing, is moved from the transport position. In one example, the transport control unit CU may also be configured as a transport control module TM1, TM2 to move the substrate W, after undergoing substrate processing, from the transport position.

[0102] Step ST4 is performed after step ST3. In step ST4, an image of the substrate W being transported along the transport path P is acquired. In one embodiment, the camera unit 60 may also be configured to acquire the image of the substrate W being transported along the transport path P in the substrate inspection module CM.

[0103] Step ST5 is performed after step ST4. In step ST5, a first feature pattern 71 having a center reflecting the center position of the substrate W is extracted from the image of the substrate W after substrate processing, and a second feature pattern 72 having a center reflecting the center position 11c of the substrate support portion 11 during substrate processing is extracted. In one example, the extraction unit 2b1 may also extract the first feature pattern 71 having a center at the center position of the substrate W from any one of the images 7, 7A, 7B, 7C, and 7D of the substrate W after substrate processing. In one example, the extraction unit 2b1 may also be configured to extract at least one of the second feature patterns 72, 72A, 72B, 72C, and 72D whose center reflects the center position 11c of the substrate support portion 11 during substrate processing from the image of the substrate W after substrate processing.

[0104] Step ST6 is performed after step ST5. In step ST6, the positional relationship between the position of the substrate support portion 11 and the position of the substrate W during substrate processing is calculated based on the first feature pattern 71 and the second feature pattern 72. In one example, the calculation unit 2b2 may also be configured to calculate the positional relationship between the position of the substrate support portion 11 and the position of the substrate W during substrate processing based on at least one of the first feature pattern 71 and the second feature patterns 72, 72A, 72B, 72C, and 72D. In one embodiment, in step ST6, the positional relationship between the first center position 71a determined from the first feature pattern 71 and the second center position 72a determined from any one of the second feature patterns 72, 72A, 72B, 72C, and 72D may also be calculated.

[0105] In one embodiment, steps ST7, ST8, ST9, and ST10 may also be executed. Step ST7 is performed after step ST6. In step ST7, it is determined whether the difference between the position of the substrate support 11 and the position of the substrate W during substrate processing (hereinafter referred to as the "position difference") is greater than or equal to a first threshold. When it is determined that the position difference is greater than or equal to the first threshold, the transport modules TM1 and TM2 are controlled not to transport the substrate W to the transport position. The position difference may also be the difference between the center position 11c of the substrate support 11 and the center position of the substrate W during substrate processing. Figure 11 In one example shown, the position difference could also be the square root of the sum of the squares of X1 and Y1.

[0106] In one example, the transport control unit CU may also be configured to determine whether the position difference is greater than or equal to a first threshold. The transport control unit CU may also be configured to control the transport modules TM1 and TM2 to prevent the substrate W from being transported to the transport position when the position difference is greater than or equal to the first threshold.

[0107] In one implementation, if the position difference is determined to be greater than or equal to a first threshold, step ST9 may be executed subsequently. In step ST9, a warning is issued. In one example, the transport control unit CU may also issue a warning indicating that the substrate W should be stopped from being transported to the transport position if the position difference is greater than or equal to the first threshold. After step ST9, method MT may end.

[0108] In one embodiment, if it is determined that the position difference is not greater than or equal to the first threshold, step ST10 may be executed subsequently. In step ST10, it is determined whether the position difference is less than or below the second threshold. When the position difference is less than or below the second threshold, the transport module is controlled to transport the substrate W to the transport position without correcting the transport position, and then method MT can end. In one example, the transport control unit CU may also be configured to control transport modules TM1 and TM2 to transport the substrate W to the transport position without correcting the transport position when the position difference is less than or below the second threshold.

[0109] In one implementation, if it is determined that the position difference is not less than or below the second threshold, step ST11 can be executed subsequently. In step ST11, the transport position is corrected based on the positional relationship. Transport modules TM1 and TM2 are controlled to transport the substrate W to the corrected transport position, after which method MT can end. In one example, the transport control unit CU can also be configured to correct the transport position based on the positional relationship between the position of the substrate support 11 and the position of the substrate W during substrate processing.

[0110] Furthermore, when multiple substrates W are processed, method MT can also be performed on a subset of the substrates W. For example, method MT can be performed each time a predetermined number of substrates W or two or more substrates W are processed consecutively. The transport position can be corrected for the substrates W processed after method MT is executed. In method MT, the substrates W can also be dummy substrates. For example, method MT can be performed on dummy substrates each time a predetermined number of substrates W or two or more substrates W are processed consecutively. The transport position can be corrected for the substrates W processed after method MT is performed on the dummy substrates. In setting up or maintaining the substrate processing system PS, method MT can also be performed on dummy substrates to confirm or correct the transport position.

[0111] The above describes various exemplary embodiments, but is not limited to these exemplary embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0112] The substrate processing system PS may not include the substrate inspection module CM. The camera unit may also not be included in the substrate inspection module CM, as long as the camera unit is configured to have its field of view encompassing the transport path of the substrate W. The camera unit may also be included in any one of the loading inlets LP1-LP4, the aligner AN, the loading locking modules LL1 and LL2, and the storage unit SR. The camera unit may also be located within the chamber of the loading module LM. The camera unit may also be located within the chamber of the transport module TM1 or the chamber of the transport module TM2.

[0113] Figure 8 The second feature pattern 72 shown can also reflect the pattern of the plurality of second protrusions 51d of the electrostatic chuck 51, and reflects the pattern formed on the upper surface of the substrate W by an etching process that serves as a substrate treatment. Figure 9 The second feature pattern 72A shown can also reflect the pattern of the multiple gas holes 5c of the electrostatic chuck 51, and reflects the pattern formed on the upper surface of the substrate W by an etching process that serves as a substrate treatment. Figure 9 The second feature pattern 72B shown can also reflect the pattern of the multiple pin holes 5d of the electrostatic chuck 51, and reflects the pattern formed on the upper surface of the substrate W by an etching process that serves as a substrate treatment. Figure 10 The second feature pattern 72C shown can also reflect the pattern of the first protrusion 51c of the electrostatic chuck 51, and the pattern of the deposit Wa formed on the upper surface of the substrate W.

[0114] Hereinafter, various exemplary embodiments included in this disclosure will be described in [E1] to [E20].

[0115] [E1] A substrate processing system, comprising: The process module has a chamber and a substrate support disposed in the chamber, and is configured to perform substrate processing on the substrate on the substrate support; The transport module is configured to transport the substrate to a transport position on the substrate support portion; The camera unit has a field of view that includes the transport path of the substrate and is configured to acquire an image of the substrate; The extraction unit is configured to extract, from the image of the substrate after the substrate processing is applied, a first feature pattern having a center reflecting the center position of the substrate, and a second feature pattern having a center reflecting the center position of the substrate support portion when the substrate processing is performed; The calculation unit is configured to calculate, based on the first feature pattern and the second feature pattern, the positional relationship between the position of the substrate support and the position of the substrate during substrate processing; and The transport control unit is configured to correct the transport position of the transport module based on the positional relationship.

[0116] [E2] As described in [E1], the substrate processing system The calculation unit is configured to calculate the positional relationship between the center position of the substrate support and the center position of the substrate during the substrate processing, based on a first center position determined from the first feature pattern and a second center position determined from the second feature pattern.

[0117] [E3] The substrate processing system as described in [E1] or [E2] The substrate support includes an electrostatic chuck. The second feature pattern reflects the pattern of the surface structure of the electrostatic chuck.

[0118] [E4] As described in [E3], the substrate processing system The electrostatic chuck comprises: The first protrusion has an annular shape and an upper surface that forms the substrate support surface; and Multiple second protrusions, each having an upper surface forming the substrate support surface, are disposed inside the first protrusion. The second feature pattern reflects the pattern of the first protrusion and / or the plurality of second protrusions.

[0119] [E5] The substrate processing system as described in any one of [E1] to [E4], The second feature pattern reflects a pattern formed on the upper surface of the substrate by an etching process that serves as the substrate treatment.

[0120] [E6] The substrate processing system as described in any one of [E3] to [E5], The substrate support portion includes a plurality of gas holes communicating with the gap between the substrate and the electrostatic chuck. The second feature pattern reflects the pattern of the plurality of gas holes.

[0121] [E7] The substrate processing system as described in any one of [E1] to [E6], The substrate support includes multiple pin holes for inserting multiple lifting pins into the substrate. The second feature pattern reflects the pattern of the plurality of pin holes.

[0122] [E8] The substrate processing system as described in any one of [E1] to [E7], The second feature pattern reflects the pattern of the deposit formed on the upper surface of the substrate by the substrate treatment.

[0123] [E9] The substrate processing system as described in any one of [E1] to [E8], The second characteristic pattern reflects the pattern of the deposit formed on the lower surface of the substrate through substrate treatment. The pattern of the deposit has an inner edge on the lower surface of the substrate relative to the edge of the substrate.

[0124] [E10] As described in [E9], the substrate processing system, The first feature pattern is a pattern that reflects the edge of the substrate. The calculation unit is configured to calculate the distance between the inner edge of the second feature pattern and the edge of the first feature pattern at each of three or more radial directions on the edge of the first feature pattern, and calculate the positional relationship based on the distance at each of the three or more radial directions.

[0125] [E11] As described in [E10], the substrate processing system The calculation unit is configured to use the distance on each of the three or more radial directions, a first angle between the first radial direction and a second radial direction different from the first radial direction, and a second angle between the second radial direction and a third radial direction different from the second radial direction, to calculate a sine wave function that interpolates the distance between the inner edge and the edge on the radial direction within the first angle and the distance between the inner edge and the edge on the radial direction within the second angle, and to correct the distance on each of the three or more radial directions using the sine wave function.

[0126] [E12] The substrate processing system as described in any one of [E1] to [E11], The transport control unit is configured to control the transport module to prevent the substrate from being transported to the transport position if the difference between the position of the substrate support and the position of the substrate during the substrate processing is greater than or equal to a first threshold.

[0127] [E13] As described in [E12], the substrate processing system The transport control unit is configured to issue a warning if the difference is greater than or equal to the first threshold.

[0128] [E14] The substrate processing system as described in any one of [E1] to [E13], The transport control unit is configured such that, when the difference between the position of the substrate support and the position of the substrate during the substrate processing is less than or below a second threshold, it controls the transport module to transport the substrate to the transport position without correcting the transport position.

[0129] [E15] The substrate processing system as described in any one of [E1] to [E14], The transport control unit is configured such that, when the difference between the position of the substrate support and the position of the substrate during the substrate processing is less than or below a first threshold and greater than or above a second threshold, it corrects the transport position based on the positional relationship and controls the transport module to transport the substrate to the corrected transport position.

[0130] [E16] The substrate processing system as described in any one of [E1] to [E15], The extraction unit is configured to extract the first feature pattern by binarizing the image.

[0131] [E17] The substrate processing system as described in any one of [E1] to [E16], The extraction unit is configured to extract the second feature pattern based on the difference between the image and an image obtained by blurring the image.

[0132] [E18] A substrate processing method, comprising: The process of moving the substrate to a transport position located on the substrate support within the cavity; The substrate processing step is performed on the substrate on the substrate support portion; The process of transporting the substrate after it has undergone the substrate treatment from the transport location; The process of acquiring an image of the substrate being transported along a transport path; The process of extracting a first feature pattern having a center reflecting the center position of the substrate from an image of the substrate after the substrate processing is applied, and extracting a second feature pattern having a center reflecting the center position of the substrate support portion when the substrate processing is performed; The process of calculating the positional relationship between the position of the substrate support and the position of the substrate during substrate processing based on the first feature pattern and the second feature pattern; and The process of correcting the transport position based on the positional relationship.

[0133] [E19] A program executed by a computer of a substrate processing system, causing the substrate processing system to perform the substrate processing method as described in [E18].

[0134] [E20] A storage medium storing a program as described in [E19].

[0135] As can be understood from the above description, various embodiments of this disclosure have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of this disclosure. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and their true scope and spirit are shown in the appended claims.

[0136] Marker description 1…Plasma processing device, 2b1…Extraction unit, 2b2…Calculation unit, 5c…Gas hole, 5d…Pin hole, 7, 7A, 7B, 7C, 7D, 7E…Image, 10…Cavity, 11…Substrate support unit, 11a…Substrate support surface, 11c…Center position, 71a…First center position, 72a…Second center position, 51…Electrostatic chuck, 51c…First protrusion, 51d…Second protrusion, 60, 65…Camera unit, 70…Edge, 71…First feature pattern, 72, 72A, 72B, 72C, 72D…Second feature pattern, CU…Transportation control unit, D1~D8…Radial, P…Transportation path, PM1~PM12…Process module, PS…Substrate processing system, TM1, TM2…Transportation module, W…Substrate, Wa, Wb…Deposit.

Claims

1. A substrate processing system comprising: a process module having a chamber and a substrate support portion disposed in the chamber, configured to perform a substrate process on a substrate on the substrate support portion; a transfer module configured to transfer the substrate to a transfer position on the substrate support portion; an imaging portion having a field of view including a transfer path of the substrate, configured to acquire an image of the substrate; an extraction portion configured to extract a first feature pattern having a center reflecting a center position of the substrate from the image of the substrate after the substrate process is applied, and to extract a second feature pattern having a center reflecting a center position of the substrate support portion at a time when the substrate process is performed; a calculation portion configured to calculate a positional relationship between a position of the substrate support portion at the time when the substrate process is performed and a position of the substrate, based on the first feature pattern and the second feature pattern; and a transfer control portion configured to correct the transfer position with respect to the transfer module based on the positional relationship.

2. The substrate processing system according to claim 1, wherein the calculation portion is configured to calculate the positional relationship between the center position of the substrate support portion at the time when the substrate process is performed and the center position of the substrate, based on a first center position determined from the first feature pattern and a second center position determined from the second feature pattern.

3. The substrate processing system according to claim 2, wherein the substrate support portion includes an electrostatic chuck, and the second feature pattern reflects a pattern of a surface structure of the electrostatic chuck.

4. The substrate processing system according to claim 3, wherein the electrostatic chuck includes: a first protrusion having a ring shape and having an upper surface constituting a substrate support surface; and a plurality of second protrusions each having an upper surface constituting the substrate support surface and disposed inside the first protrusion, and the second feature pattern reflects a pattern of the first protrusion and / or the plurality of second protrusions.

5. The substrate processing system according to claim 4, wherein the second feature pattern reflects a pattern formed on an upper surface of the substrate by an etching process as the substrate process.

6. The substrate processing system according to claim 3, wherein the substrate support portion includes a plurality of gas holes communicating with a gap between the substrate and the electrostatic chuck, and the second feature pattern reflects a pattern of the plurality of gas holes.

7. The substrate processing system according to claim 1, wherein the substrate support portion includes a plurality of pin holes into which a plurality of lift pins for the substrate are inserted, and the second feature pattern reflects a pattern of the plurality of pin holes.

8. The substrate processing system according to claim 6 or 7, wherein the second feature pattern reflects a pattern of a deposit formed on an upper surface of the substrate by the substrate process.

9. The substrate processing system according to claim 1, wherein the second feature pattern reflects a pattern of a deposit formed on a lower surface of the substrate by the substrate process, and the pattern of the deposit has an inner edge on the lower surface of the substrate inside with respect to an edge of the substrate.

10. The substrate processing system according to claim 9, wherein the first feature pattern is a pattern reflecting the edge of the substrate. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The calculating section is configured to calculate a distance between an inner edge in the second feature pattern and the edge in the first feature pattern on each of three or more radial directions on the edge of the first feature pattern, and calculate the positional relationship based on the distance on each of the three or more radial directions.

11. The substrate processing system according to claim 10, The calculating section is configured to calculate a sine wave function that interpolates the distance between the inner edge and the edge on a radial direction within a first angle between a first radial direction among the three or more radial directions and a second radial direction different from the first radial direction, and a second angle between the second radial direction and a third radial direction different from the second radial direction, using the distance on each of the three or more radial directions, the first angle, and the second angle, and correct the distance on each of the three or more radial directions by the sine wave function.

12. The substrate processing system according to any one of claims 1 to 7, The carrying control section is configured to control the carrying module not to carry the substrate to the carrying position when a difference between the position of the substrate support section at the time of execution of the substrate processing and the position of the substrate is greater than or equal to a first threshold value.

13. The substrate processing system according to claim 12, The carrying control section is configured to issue a warning when the difference is greater than or equal to the first threshold value.

14. The substrate processing system according to any one of claims 1 to 7, The carrying control section is configured to control the carrying module not to correct the carrying position and to carry the substrate to the carrying position when a difference between the position of the substrate support section at the time of execution of the substrate processing and the position of the substrate is smaller than or equal to a second threshold value.

15. The substrate processing system according to any one of claims 1 to 7, The carrying control section is configured to correct the carrying position based on the positional relationship and to control the carrying module to carry the substrate to the corrected carrying position when the difference between the position of the substrate support section at the time of execution of the substrate processing and the position of the substrate is smaller than or equal to a first threshold value and greater than or equal to a second threshold value.

16. The substrate processing system according to any one of claims 1 to 7, The extracting section is configured to extract the first feature pattern by binarizing the image.

17. The substrate processing system according to any one of claims 1 to 7, The extracting section is configured to extract the second feature pattern based on a difference between the image and an image obtained by performing a blur process on the image.

18. A substrate processing method comprising: a step of carrying a substrate to a carrying position on a substrate support section provided in a chamber; a step of executing a substrate processing on the substrate on the substrate support section; a step of carrying the substrate after the substrate processing is applied to the substrate from the carrying position; an operation of acquiring an image of the substrate being carried along the carrying path; an operation of extracting a first characteristic pattern having a center reflecting a center position of the substrate from the image of the substrate after the substrate processing, and extracting a second characteristic pattern having a center reflecting a center position of the substrate support portion at the time of execution of the substrate processing; an operation of calculating a positional relationship between the position of the substrate support portion at the time of execution of the substrate processing and the position of the substrate based on the first characteristic pattern and the second characteristic pattern; an operation of correcting the carrying position based on the positional relationship.

19. A program executed by a computer of a substrate processing system, which causes the substrate processing system to execute the substrate processing method according to claim 18.

20. A storage medium storing the program according to claim 19. ​

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