Broadband high-power PIN transmitting and receiving switch capable of switching polarization

Abstract

The invention discloses a broadband high-power polarization-switchable PIN transmit-receive switch, which comprises a first dielectric substrate and a second dielectric substrate which are arranged at an interval, and four groups of PIN diodes are arranged between the two dielectric substrates; a first micro-strip planar circuit is arranged on the first dielectric substrate and comprises a transmitting end, a horizontal polarization receiving end, a vertical polarization receiving end, a first group of multi-stage low-impedance micro-strip lines, a first high-impedance micro-strip line and a second high-impedance micro-strip line; a second micro-strip planar circuit is arranged on the second dielectric substrate and comprises a horizontal polarized antenna end, a vertical polarized antenna end, a second group of multi-stage low-impedance micro-strip lines and a third group of multi-stage low-impedance micro-strip lines; the first micro-strip planar circuit and the second micro-strip planar circuit form a horizontal polarization channel and a vertical polarization channel of the transmitting channel and the receiving channel; and the first group of multi-stage low-impedance microstrip lines, the second group of multi-stage low-impedance microstrip lines and the third group of multi-stage low-impedance microstrip lines all comprise multi-stage microstrip lines with different electrical lengths and characteristic impedances. The PIN switch not only can bear high power, but also can realize broadband matching at a high frequency band.

Description

Technical Field

[0001] This invention relates to PIN switches, and more specifically to a broadband, high-power, switchable polarization PIN transceiver switch. Background Technology

[0002] High-power microwave switches are commonly used microwave circuits, primarily for switching radio frequency channels in high-power microwave systems. High-power microwave switches typically come in five implementation types: mechanical switches, ferrite switches, GaN switches, PIN switches, and SOI switches.

[0003] Among these advantages, PIN switches have the advantage over mechanical switches in that the number of switching cycles does not affect their lifespan, and compared to GaN and SOI switches, they have the advantage of higher power handling capacity. For example... Figure 1 As shown, a classic parallel PIN switch in the prior art consists of two 1 / 4 wavelength stub transmission lines with a characteristic impedance of 50 ohms and two PIN diodes connected in parallel to ground. The power handling capacity of a PIN switch is mainly limited by the breakdown voltage and heat dissipation of the PIN diodes. Generally, the breakdown voltage and junction capacitance of PIN diodes capable of handling high power are relatively large. However, large junction capacitance is detrimental to achieving broadband performance and makes it difficult to achieve broadband matching at high frequencies. Therefore, for PIN switches, high power and broadband performance are often contradictory, which has limited the application of PIN switches in today's broadband systems. Summary of the Invention

[0004] Purpose of the invention: The purpose of this invention is to provide a broadband high-power switchable polarization PIN transceiver switch, which enables the PIN switch to withstand high power and achieve broadband matching in the high-frequency band.

[0005] Technical solution: The broadband high-power switchable polarization PIN transceiver switch comprises a first dielectric substrate and a second dielectric substrate arranged at intervals, four groups of PIN diodes are arranged between the first dielectric substrate and the second dielectric substrate; a first microstrip plane circuit is arranged on the first dielectric substrate, the first microstrip plane circuit comprises a transmitting end TX, a horizontal polarization receiving end RX-H, a vertical polarization receiving end RX-V, a first group of multistage low-impedance microstrip lines, a first high-impedance microstrip line and a second high-impedance microstrip line; a second microstrip plane circuit is arranged on the second dielectric substrate, the second microstrip plane circuit comprises a horizontal polarization antenna end ANT-H, a vertical polarization antenna end ANT-V, a second group of multistage low-impedance microstrip lines and a third group of multistage low-impedance microstrip lines; an input end of the first group of multistage low-impedance microstrip lines is connected with the transmitting end TX, one output end of the first group of multistage low-impedance microstrip lines is connected with one end of the second group of PIN diodes, one input end of the second group of multistage low-impedance microstrip lines is connected with the other end of the second group of PIN diodes, and the output end of the second group of multistage low-impedance microstrip lines is connected with the horizontal polarization antenna end ANT-H, so as to form a horizontal polarization channel of a transmitting channel; the other output end of the first group of multistage low-impedance microstrip lines is connected with one end of the third group of PIN diodes, one input end of the third group of multistage low-impedance microstrip lines is connected with the other end of the third group of PIN diodes, and the output end of the third group of multistage low-impedance microstrip lines is connected with the vertical polarization antenna end ANT-V, so as to form a vertical polarization channel of the transmitting channel; the horizontal polarization receiving end RX-H and one end of the first group of PIN diodes are connected through the first high-impedance microstrip line, the other input end of the second group of multistage low-impedance microstrip lines is connected with the other end of the first group of PIN diodes, so as to form a horizontal polarization channel of a receiving channel; the vertical polarization receiving end RX-V and one end of the fourth group of PIN diodes are connected through the second high-impedance microstrip line, the other input end of the third group of multistage low-impedance microstrip lines is connected with the other end of the fourth group of PIN diodes, so as to form a vertical polarization channel of the receiving channel; the first group of multistage low-impedance microstrip lines, the second group of multistage low-impedance microstrip lines and the third group of multistage low-impedance microstrip lines all comprise multistage microstrip lines with different electrical lengths and characteristic impedances.

[0006] Further, the first group of multistage low-impedance microstrip lines, the second group of multistage low-impedance microstrip lines and the third group of multistage low-impedance microstrip lines all comprise a first common low-impedance microstrip line, a second common low-impedance microstrip line and two switch branch low-impedance lines; the first common low-impedance microstrip line and the second common low-impedance microstrip line are connected in series, two direct-current blocking capacitors are arranged at the upper right corner and the lower right corner of the other end of the second common low-impedance microstrip line respectively, and the two direct-current blocking capacitors are used for connecting the switch branch low-impedance lines.

[0007] Further, the characteristic impedance of the first common low-impedance microstrip line is greater than the characteristic impedance of the second common low-impedance microstrip line.

[0008] Further, the electric length of the switch stub low-impedance line is less than the electric length of the first common low-impedance microstrip line.

[0009] Further, the direct-current blocking capacitor is connected to the switch stub low-impedance line through a gold wire or a gold tape.

[0010] Further, the opening or closing of the horizontal polarization channel and the vertical polarization channel of the transmitting channel and the horizontal polarization channel and the vertical polarization channel of the receiving channel is controlled by applying a reverse bias voltage or a forward bias current to each group of PIN diodes, so that the transmitting and receiving switching and the polarization switching are realized.

[0011] Further, the cathodes of the four groups of PIN diodes are mounted on the metal heat sink, and the anodes of the four groups of PIN diodes are connected to the multi-stage low-impedance microstrip line, the first or second high-impedance microstrip line in the microstrip plane circuit through a gold wire or a gold tape.

[0012] Further, the first dielectric substrate and the second dielectric substrate are each arranged above the metal heat sink through a metal ground layer.

[0013] Further, the four groups of PIN diodes are arranged at intervals, and each group of PIN diodes includes four PIN diodes arranged side by side.

[0014] Further, the PIN transceiver switch operates in the S and C bands.

[0015] Advantages: Compared with the prior art, the significant technical effects of the present application are as follows: (1) The present application uses multi-stage microstrip lines with different electric lengths and characteristic impedances, as well as parallel PIN diode strings, so that the PIN switch can withstand high power and achieve wideband matching in a high-frequency band, thereby obtaining a wideband high-power PIN switch; the bandwidth of the PIN switch is greatly increased, and the operating frequency band is higher than that of a classic parallel PIN switch; (2) By applying a reverse bias voltage or a forward bias current to each group of PIN diodes, the opening or closing of the horizontal polarization channel and the vertical polarization channel of the transmitting channel and the horizontal polarization channel and the vertical polarization channel of the receiving channel can be controlled to realize the transmitting and receiving switching and the polarization switching; (3) After modeling optimization by an electromagnetic field simulation software and physical processing testing, the PIN switch according to the present application has good wideband and loss performance, and can withstand kW-level radio frequency through power. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 FIG. 1 is a structural schematic diagram of a PIN switch in the prior art;

[0017] Figure 2 FIG. 4 is a top view of the present application;

[0018] Figure 3 FIG. 5 is a layer structure diagram of the present application;

[0019] Figure 4 S-parameter simulation graph for the transmit channel open;

[0020] Figure 5 S-parameter simulation graph for the receive channel open. DETAILED DESCRIPTION

[0021] The technical solutions of the present application will be described in detail below in conjunction with the specific embodiments and the accompanying drawings of the specification.

[0022] As shown in Figure 2 and 3 , a wideband high-power switchable polarization PIN transceiver switch of the present application, which works in S and C bands, specifically relates to the following components: a first dielectric substrate 1, a second dielectric substrate 2, PIN diodes, a first microstrip plane circuit 4, a second microstrip plane circuit 5, a first metal ground layer 6, a second metal ground layer 7, a metal heat sink 8, gold wires 9, and a direct-current blocking capacitor.

[0023] The first dielectric substrate 1 and the second dielectric substrate 2 are each arranged above the metal heat sink 8 through a metal ground layer; specifically, the first dielectric substrate 1 is arranged above the metal heat sink 8 through the first metal ground layer 6, and the second dielectric substrate 2 is arranged above the metal heat sink 8 through the second metal ground layer 7. In this embodiment, the first dielectric substrate 1 and the second dielectric substrate 2 both adopt aluminum nitride substrates with a thickness of 0.38 mm and a dielectric constant of 8.6. The first dielectric substrate 1 and the second dielectric substrate 2 are arranged at intervals. Four groups of PIN diodes are arranged between the first dielectric substrate 1 and the second dielectric substrate 2. The four groups of PIN diodes are arranged at intervals, and each group of PIN diodes includes four PIN diodes 3 arranged side by side. In this embodiment, the PIN diodes are selected to be PIN diodes with a junction capacitance of 0.15 pF, an I layer thickness of 50 um, and a reverse breakdown voltage of 500 V. The bottom surface of the PIN diode, i.e., the cathode, is mounted on the metal heat sink 8 with good heat conduction, and the anode is connected to the microstrip patterns on both sides with gold wires or gold belts.

[0024] The first microstrip plane circuit 4 is arranged on the first dielectric substrate 1, and the first microstrip plane circuit 4 includes a transmit end TX, a horizontally polarized receive end RX-H, a vertically polarized receive end RX-V, a first group of multi-stage low-impedance microstrip lines, a first high-impedance microstrip line 45, and a second high-impedance microstrip line 46. The second microstrip plane circuit 5 is arranged on the second dielectric substrate 2, and the second microstrip plane circuit 5 includes a horizontally polarized antenna end ANT-H, a vertically polarized antenna end ANT-V, a second group of multi-stage low-impedance microstrip lines, and a third group of multi-stage low-impedance microstrip lines. The specific arrangement is as follows:

[0025] The input end of the first group of multi-stage low-impedance microstrip lines is connected with the transmitting end TX, one output end of the first group of multi-stage low-impedance microstrip lines is connected with one end of the second group of PIN diodes, one input end of the second group of multi-stage low-impedance microstrip lines is connected with the other end of the second group of PIN diodes, and the output end of the second group of multi-stage low-impedance microstrip lines is connected with the horizontal polarization antenna end ANT-H, thereby forming a horizontal polarization channel of the transmitting channel.

[0026] The other output end of the first group of multi-stage low-impedance microstrip lines is connected with one end of the third group of PIN diodes, one input end of the third group of multi-stage low-impedance microstrip lines is connected with the other end of the third group of PIN diodes, and the output end of the third group of multi-stage low-impedance microstrip lines is connected with the vertical polarization antenna end ANT-V, thereby forming a vertical polarization channel of the transmitting channel.

[0027] The horizontal polarization receiving end RX-H is connected with one end of the first group of PIN diodes through the first high-impedance microstrip line, and the other input end of the second group of multi-stage low-impedance microstrip lines is connected with the other end of the first group of PIN diodes, thereby forming a horizontal polarization channel of the receiving channel.

[0028] The vertical polarization receiving end RX-V is connected with one end of the fourth group of PIN diodes through the second high-impedance microstrip line, and the other input end of the third group of multi-stage low-impedance microstrip lines is connected with the other end of the fourth group of PIN diodes, thereby forming a vertical polarization channel of the receiving channel.

[0029] The first group of multi-stage low-impedance microstrip lines, the second group of multi-stage low-impedance microstrip lines, and the third group of multi-stage low-impedance microstrip lines all include multi-stage microstrip lines with different electrical lengths and characteristic impedances. Specifically, the first group of multi-stage low-impedance microstrip lines, the second group of multi-stage low-impedance microstrip lines, and the third group of multi-stage low-impedance microstrip lines all include a first common low-impedance microstrip line, a second common low-impedance microstrip line, and two switch branch low-impedance lines. The first common low-impedance microstrip line and the second common low-impedance microstrip line are connected in series, and two decoupling capacitors are arranged at the upper right corner and the lower right corner of the other end of the second common low-impedance microstrip line for connecting the switch branch low-impedance lines. The characteristic impedance of the first common low-impedance microstrip line is greater than that of the second common low-impedance microstrip line. The electrical length of the switch branch low-impedance line is less than that of the first common low-impedance microstrip line. Specifically,

[0030] The first group of multi-stage low-impedance microstrip lines includes a first transmitting-end common low-impedance microstrip line 41, a second transmitting-end common low-impedance microstrip line 42, a first transmitting-end branch low-impedance line 43, and a second transmitting-end branch low-impedance line 44. One end of the first transmitting-end common low-impedance microstrip line 41 is connected to the transmitting end TX, and the other end of the first transmitting-end common low-impedance microstrip line 41 is connected to one end of the second transmitting-end common low-impedance microstrip line 42. The upper right corner of the other end of the second transmitting-end common low-impedance microstrip line 42 is arranged with a direct-current blocking capacitor C1-C2, the direct-current blocking capacitors C1-C2 are arranged side by side, and the direct-current blocking capacitors C1-C2 are connected to the first transmitting-end branch low-impedance line 43 through gold wires or gold belts. The lower right corner of the other end of the second transmitting-end common low-impedance microstrip line 42 is arranged with a direct-current blocking capacitor C3-C4, the direct-current blocking capacitors C3-C4 are arranged side by side, and the direct-current blocking capacitors C3-C4 are connected to the second transmitting-end branch low-impedance line 44 through gold wires or gold belts. The other end of the first transmitting-end branch low-impedance line 43 is connected to the anode of the second group of PIN diodes through a gold wire 9 or a gold belt. The other end of the second transmitting-end branch low-impedance line 44 is connected to the anode of the third group of PIN diodes through a gold wire 9 or a gold belt. The characteristic impedance of the first transmitting-end common low-impedance microstrip line 41 is greater than the characteristic impedance of the second transmitting-end common low-impedance microstrip line 42. The electrical length of the first transmitting-end branch low-impedance line 43 and the second transmitting-end branch low-impedance line 44 is less than the electrical length of the first transmitting-end common low-impedance microstrip line 41.

[0031] The second group of multi-stage low-impedance microstrip lines includes a first horizontal polarization antenna end common low-impedance microstrip line 51, a second horizontal polarization antenna end common low-impedance microstrip line 53, a first horizontal polarization antenna end branch low-impedance line 55, and a second horizontal polarization antenna end branch low-impedance line 56. One end of the first horizontal polarization antenna end common low-impedance microstrip line 51 is connected to the horizontal polarization antenna end ANT-H, and the other end of the first horizontal polarization antenna end common low-impedance microstrip line 51 is connected to one end of the second horizontal polarization antenna end common low-impedance microstrip line 53. The upper left corner of the other end of the second horizontal polarization antenna end common low-impedance microstrip line 53 is arranged with a blocking capacitor C5-C6, the blocking capacitors C5-C6 are arranged side by side, and the blocking capacitors C5-C6 are connected to the first horizontal polarization antenna end branch low-impedance line 55 through gold wires or gold strips. The lower left corner of the other end of the second horizontal polarization antenna end common low-impedance microstrip line 53 is arranged with a blocking capacitor C7-C8, the blocking capacitors C7-C8 are arranged side by side, and the blocking capacitors C7-C8 are connected to the second horizontal polarization antenna end branch low-impedance line 56 through gold wires or gold strips. The other end of the first horizontal polarization antenna end branch low-impedance line 55 is connected to the anode of the first group of PIN diodes through a gold wire 9 or a gold strip. The other end of the second horizontal polarization antenna end branch low-impedance line 56 is connected to the anode of the second group of PIN diodes through a gold wire 9 or a gold strip. The characteristic impedance of the first horizontal polarization antenna end common low-impedance microstrip line 51 is greater than the characteristic impedance of the second horizontal polarization antenna end common low-impedance microstrip line 53. The electrical length of the first horizontal polarization antenna end branch low-impedance line 55 and the second horizontal polarization antenna end branch low-impedance line 56 is less than the electrical length of the first horizontal polarization antenna end common low-impedance microstrip line 51.

[0032] The third group of multi-stage low-impedance microstrip lines includes a first vertically polarized antenna end common low-impedance microstrip line 52, a second vertically polarized antenna end common low-impedance microstrip line 54, a first vertically polarized antenna end branch low-impedance line 57, and a second vertically polarized antenna end branch low-impedance line 58. One end of the first vertically polarized antenna end common low-impedance microstrip line 52 is connected to the vertically polarized antenna end ANT-V, and the other end of the first vertically polarized antenna end common low-impedance microstrip line 52 is connected to one end of the second vertically polarized antenna end common low-impedance microstrip line 54. The upper left corner of the other end of the second vertically polarized antenna end common low-impedance microstrip line 54 is arranged with a blocking capacitor C9-C10, the blocking capacitors C9-C10 are arranged side by side, and the blocking capacitors C9-C10 are connected to the first vertically polarized antenna end branch low-impedance line 57 through gold wires or gold belts. The lower left corner of the other end of the second vertically polarized antenna end common low-impedance microstrip line 54 is arranged with a blocking capacitor C11-C12, the blocking capacitors C11-C12 are arranged side by side, and the blocking capacitors C11-C12 are connected to the second vertically polarized antenna end branch low-impedance line 58 through gold wires or gold belts. The other end of the first vertically polarized antenna end branch low-impedance line 57 is connected to the anode of the third group of PIN diodes through a gold wire 9 or a gold belt. The other end of the second vertically polarized antenna end branch low-impedance line 58 is connected to the anode of the fourth group of PIN diodes through a gold wire 9 or a gold belt. The characteristic impedance of the first vertically polarized antenna end common low-impedance microstrip line 52 is greater than the characteristic impedance of the second vertically polarized antenna end common low-impedance microstrip line 54. The electrical length of the first vertically polarized antenna end branch low-impedance line 57 and the second vertically polarized antenna end branch low-impedance line 58 is less than the electrical length of the first vertically polarized antenna end common low-impedance microstrip line 52.

[0033] In this embodiment, the blocking capacitors C1-C12 are silicon-based chip capacitors with a capacity of 47pF and a size of 0.46mm*0.46mm*0.15mm.

[0034] The five external signal ports of this embodiment are the transmit port TX, the horizontally polarized antenna end ANT-H, the vertically polarized antenna end ANT-V, the horizontally polarized receive end RX-H, and the vertically polarized receive end RX-V. The port characteristic impedance is 50 ohms.

[0035] The first high-impedance microstrip line 45 is connected to the anode of the first group of PIN diodes through a gold wire 9 or a gold belt, and the second high-impedance microstrip line 46 is connected to the anode of the fourth group of PIN diodes through a gold wire 9 or a gold belt.

[0036] The cathodes of the four groups of PIN diodes are mounted on the metal heat sink 8, and the anodes of the four groups of PIN diodes are connected to the multi-stage low-impedance microstrip lines, the first or second high-impedance microstrip lines in the microstrip plane circuit through gold wires or gold belts. Specifically as follows:

[0037] The first group of PIN diodes includes PIN diodes D1-D4, which are arranged in parallel, the cathodes of the PIN diodes D1-D4 are mounted on the metal heat sink 8, and the anodes of the PIN diodes D1-D4 are connected with the first high-impedance microstrip line 45, the first horizontal polarization antenna end branch low-impedance line 55 through gold wires 9 or gold belts. The second group of PIN diodes includes PIN diodes D5-D8, which are arranged in parallel, the cathodes of the PIN diodes D5-D8 are mounted on the metal heat sink 8, and the anodes of the PIN diodes D5-D8 are connected with the first transmitting end branch low-impedance line 43, the second horizontal polarization antenna end branch low-impedance line 56 through gold wires 9 or gold belts. The third group of PIN diodes includes PIN diodes D9-D12, which are arranged in parallel, the cathodes of the PIN diodes D9-D12 are mounted on the metal heat sink 8, and the anodes of the PIN diodes D9-D12 are connected with the second transmitting end branch low-impedance line 44, the first vertical polarization antenna end branch low-impedance line 57 through gold wires 9 or gold belts. The fourth group of PIN diodes includes PIN diodes D13-D16, which are arranged in parallel, the cathodes of the PIN diodes D13-D16 are mounted on the metal heat sink 8, and the anodes of the PIN diodes D13-D16 are connected with the second high-impedance microstrip line 46, the second vertical polarization antenna end branch low-impedance line 58 through gold wires 9 or gold belts.

[0038] The present application can realize wideband at high frequency band by using PIN diodes with large junction capacitance, and thus realize wideband high-power switch.

[0039] The opening or closing of the four channels, i.e., the horizontal polarization channel and the vertical polarization channel of the transmitting channel and the horizontal polarization channel and the vertical polarization channel of the receiving channel, is controlled by applying reverse bias voltage or positive bias current to each group of the four groups of PIN diodes, so as to realize the switching of transmitting and receiving and the switching of polarization. Specifically, the following is implemented:

[0040] The PIN diodes D1-D16 of the present embodiment are divided into four groups, and different bias is applied to each group of diodes, so as to realize the switching of transmitting and receiving and the switching of polarization. Reverse bias voltage -100V or positive bias current 200mA is applied to each group of diodes. The bias relationship between the channel switch and the PIN diode is as follows:

[0041]

[0042] Figure 4S-parameter simulation curves for the transmitting channel are opened, wherein S(2, 1) represents the transmitting channel insertion loss, and S(1, 1) represents the echo loss of the transmitting port TX; Figure 5 S-parameter simulation curves for the receiving channel are opened, wherein S(4, 3) represents the receiving channel insertion loss, and S(4, 4) represents the receiving port echo loss. It can be seen that the bandwidth covers about 2.5-7 GHz.

[0043] The bandwidth performance of the PIN switch of the embodiment after actual processing is basically consistent with the simulation, and the insertion loss in the 2.5-6 GHz frequency band is less than 1.1 dB. Based on the existing test conditions, it has been verified that the transmitting channel can work stably for a long time under the condition of 700 W, 1 ms and 10%, and higher bearing power can be further verified in due course.

Claims

1. A broadband, high-power, switchable polarization PIN transceiver switch, characterized in that: It includes a first dielectric substrate (1) and a second dielectric substrate (2) spaced apart, with four sets of PIN diodes arranged between the first dielectric substrate (1) and the second dielectric substrate (2). A first microstrip planar circuit (4) is arranged on the first dielectric substrate (1). The first microstrip planar circuit (4) includes a transmitter TX, a horizontally polarized receiver RX-H, a vertically polarized receiver RX-V, a first group of multi-level low-impedance microstrip lines, a first high-impedance microstrip line (45), and a second high-impedance microstrip line (46). A second microstrip planar circuit (5) is arranged on the second dielectric substrate (2). The second microstrip planar circuit (5) includes a horizontally polarized antenna terminal ANT-H, a vertically polarized antenna terminal ANT-V, a second group of multi-level low-impedance microstrip lines, and a third group of multi-level low-impedance microstrip lines. The input terminal of the first group of multi-stage low-impedance microstrip lines is connected to the transmitter TX terminal. One output terminal of the first group of multi-stage low-impedance microstrip lines is connected to one end of the second group of PIN diodes. One input terminal of the second group of multi-stage low-impedance microstrip lines is connected to the other end of the second group of PIN diodes. The output terminal of the second group of multi-stage low-impedance microstrip lines is connected to the horizontally polarized antenna terminal ANT-H, forming a horizontally polarized channel of the transmission channel. The other output terminal of the first group of multi-stage low-impedance microstrip lines is connected to one end of the third group of PIN diodes, one input terminal of the third group of multi-stage low-impedance microstrip lines is connected to the other end of the third group of PIN diodes, and the output terminal of the third group of multi-stage low-impedance microstrip lines is connected to the vertically polarized antenna terminal ANT-V to form the vertically polarized channel of the transmission channel. The horizontally polarized receiver RX-H is connected to one end of the first group of PIN diodes via a first high-impedance microstrip line (45), and the other input end of the second group of multi-level low-impedance microstrip lines is connected to the other end of the first group of PIN diodes to form a horizontally polarized channel for the receiver. The vertically polarized receiver RX-V is connected to one end of the fourth group of PIN diodes via a second high-impedance microstrip line (46), and the other input end of the third group of multi-stage low-impedance microstrip lines is connected to the other end of the fourth group of PIN diodes to form a vertically polarized channel for the receiver channel. The first group of multi-stage low-impedance microstrip lines, the second group of multi-stage low-impedance microstrip lines, and the third group of multi-stage low-impedance microstrip lines all include multiple stages of microstrip lines with different electrical lengths and characteristic impedances.

2. The broadband high-power switchable polarization PIN transceiver switch according to claim 1, characterized in that: The first group of multi-stage low-impedance microstrip lines, the second group of multi-stage low-impedance microstrip lines, and the third group of multi-stage low-impedance microstrip lines all include a first common low-impedance microstrip line, a second common low-impedance microstrip line, and two switching stub low-impedance lines. The first common low-impedance microstrip line is connected in series with the second common low-impedance microstrip line. Two DC blocking capacitors are arranged at the upper right and lower right corners of the other end of the second common low-impedance microstrip line to connect the low-impedance line of the switch stub.

3. The broadband high-power switchable polarization PIN transceiver switch according to claim 2, characterized in that: The characteristic impedance of the first common low-impedance microstrip line is greater than the characteristic impedance of the second common low-impedance microstrip line.

4. The broadband high-power switchable polarization PIN transceiver switch according to claim 2, characterized in that: The electrical length of the low-impedance line of the switch stub is less than the electrical length of the first common low-impedance microstrip line.

5. The broadband high-power switchable polarization PIN transceiver switch according to claim 2, characterized in that: The DC blocking capacitor is connected to the low-impedance line of the switch stub via gold wire or gold strip.

6. The broadband high-power switchable polarization PIN transceiver switch according to claim 1, characterized in that: By applying a reverse bias voltage or a forward bias current to each of the four sets of PIN diodes, the opening or closing of the four channels—the horizontal and vertical polarization channels of the transmit channel and the horizontal and vertical polarization channels of the receive channel—is controlled, thereby achieving transmit / receive switching and polarization switching.

7. The broadband high-power switchable polarization PIN transceiver switch according to claim 1, characterized in that: The cathodes of the four sets of PIN diodes are mounted on a metal heat sink (8), and the anodes of the four sets of PIN diodes are connected to the multi-stage low-impedance microstrip lines and the first or second high-impedance microstrip lines in the microstrip planar circuit through gold wires or gold strips.

8. The broadband high-power switchable polarization PIN transceiver switch according to claim 1, characterized in that: The first dielectric substrate (1) and the second dielectric substrate (2) are each disposed above the metal heat sink (8) through a metal ground layer.

9. The broadband high-power switchable polarization PIN transceiver switch according to claim 1, characterized in that: The four groups of PIN diodes are arranged at intervals, and each group of PIN diodes includes four PIN diodes arranged in parallel.

10. The broadband high-power switchable polarization PIN transceiver switch according to claim 1, characterized in that: This PIN transceiver switch operates in the S and C bands.

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