Method for determining topological flow channel in radiator and heat pipe radiator of semiconductor
By optimizing the flow channel design and manufacturing technology of heat pipe radiators, the problem of balancing flow resistance and heat dissipation efficiency in traditional heat dissipation methods has been solved, achieving efficient and uniform heat dissipation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-01
- Publication Date
- 2026-03-24
AI Technical Summary
In traditional semiconductor heat dissipation methods, the rigid design of machining flow channels makes it difficult to achieve the optimal balance between flow resistance and heat dissipation efficiency. Furthermore, the external heat pipes of the heat spreader have contact thermal resistance, which limits its heat dissipation capabilities.
By determining the initial design domain and non-design domain of the heat pipe radiator, a preset heat dissipation performance objective function and flow resistance objective function are constructed. Green laser selective melting technology is used to manufacture the embedded heat pipe cavity and capillary wick structure, and the flow channel design is optimized to improve heat dissipation efficiency and temperature uniformity.
It improves heat dissipation efficiency, enhances the temperature uniformity of the heat pipe radiator, and achieves efficient and uniform heat dissipation.
Smart Images
Figure CN121728735A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of heat dissipation technology for power electronic devices, and in particular to a method for determining the topological flow channels inside a heat sink and a heat pipe heat sink for semiconductors. Background Technology
[0002] Currently, with the rapid development of semiconductor technology, such as the Insulated Gate Bipolar Transistor (IGBT), a core component of modern power electronic devices, IGBTs are developing towards higher power, compactness, and integration. Their power density is constantly increasing, and the heat generated per unit volume is increasing dramatically. Furthermore, excessively high junction temperatures can directly lead to performance degradation, decreased reliability, and even failure. At the same time, the temperature uniformity inside the module also affects its service stability. Therefore, high efficiency, uniform temperature control, and stable and reliable heat dissipation technology have become key to the application of high-power semiconductors.
[0003] However, traditional semiconductor heat dissipation methods, such as air cooling and aluminum extrusion profile heat sinks, have reached their performance limits. While water cooling heat sinks are more efficient, their traditional machined flow channels (such as straight grooves and serpentine grooves) are rigid in design, making it difficult to achieve an optimal balance between flow resistance and heat dissipation efficiency. Furthermore, existing semiconductor modules have high-density surface heat distribution underneath. Traditional heat dissipation methods use vapor chambers, but the external heat pipes of the vapor chamber have contact thermal resistance, which limits their heat equalization capabilities. Surface contact also greatly limits the heat equalization capabilities of the heat pipes. Summary of the Invention
[0004] This application provides a method for determining the topological flow channels within a heat sink and a heat pipe heat sink for semiconductors. The embodiments provided in this application solve the problems of rigid traditional machining flow channel designs in the prior art, which make it difficult to achieve an optimal balance between flow resistance and heat dissipation efficiency. Furthermore, existing semiconductor modules have high-density surface heat distribution below them. Traditional heat dissipation methods use vapor chambers, but the external heat pipes of the vapor chamber have contact thermal resistance, which limits their heat equalization capabilities. Surface contact greatly limits the heat equalization capabilities of heat pipes. The embodiments provided in this application improve the heat dissipation efficiency and rate for cooling the target semiconductor, and greatly enhance the heat equalization capability of the heat pipes in the heat pipe heat sink.
[0005] In a first aspect, this application provides a method for determining the internal topology of a heat sink, the method comprising: Obtain the initial design domain and initial non-design domain of the heat pipe heat sink for heat dissipation of the target semiconductor; Based on the initial design domain, the initial non-design domain, the preset heat dissipation performance objective function, and the preset flow resistance objective function, the flow channel inside the heat sink of the target semiconductor is topologically designed to determine the optimal topological flow channel inside the heat pipe heat sink. The optimal topological flow channel is used to characterize the topological flow channel structure with optimal heat dissipation performance.
[0006] In one feasible implementation, the step of performing topology design on the flow channels inside the heat sink of the target semiconductor based on the initial design domain, the initial non-design domain, a preset heat dissipation performance objective function, and a preset flow resistance objective function, and determining the optimal topology flow channels corresponding to the heat pipe heat sink, includes: Based on the preset level set function and the maximum heat dissipation performance index corresponding to the target semiconductor, a preset heat dissipation performance objective function is constructed. Based on the preset heat dissipation performance objective function, the preset flow resistance objective function, and the maximum volume fraction constraint of the fluid domain, the flow channel inside the heat sink of the target semiconductor is topologically designed to determine the optimal topological flow channel inside the heat pipe heat sink.
[0007] In one feasible implementation, after topologically designing the flow channels inside the heat sink of the target semiconductor based on the initial design domain, the initial non-design domain, a preset heat dissipation performance objective function, and a preset flow resistance objective function, and determining the optimal topological flow channels corresponding to the heat pipe heat sink, the method further includes: Based on the optimal topology flow channel and the preset three-dimensional reconstruction model, an integrated heat pipe heat sink model with internal flow channels corresponding to the target semiconductor is constructed. Based on the integrated heat pipe radiator model and the preset green laser selective melting technology, the corresponding solid structural components of the integrated heat pipe radiator model are determined. The physical structural components are encapsulated and coolant is injected to determine the target heat pipe radiator with integrated internal flow channels corresponding to the target semiconductor.
[0008] In one feasible implementation, within a predetermined region of the integrated heat pipe radiator model, an embedded heat pipe cavity and capillary wick structure conforming to the optimal topological flow channel are designed, and the method includes: Based on the centerline of the optimal topology flow channel, determine the center reference path of the optimal topology flow channel; Based on the central reference path, an envelope space of a first preset thickness is determined, and the envelope space of the first preset thickness is defined as the embedded heat pipe cavity. The porous features designed on the embedded heat pipe cavity are defined as capillary wick structures, wherein the capillary wick structure is any one of a three-period minimal surface structure, a lattice structure, and a random porous structure.
[0009] In one feasible implementation, determining the solid structural components corresponding to the integrated heat pipe radiator model based on the integrated heat pipe radiator model and a preset green laser selective melting technology includes: The integrated heat pipe radiator model is sliced to determine the processing file including multiple two-dimensional contours; Based on the processing file, a preset green laser beam is controlled to scan the additive manufacturing raw material according to the first preset process parameters to generate the basic solid structure components of the integrated heat pipe radiator model corresponding to the heat pipe radiator. After generating the basic solid structure component, the preset green laser beam is controlled to scan the additive manufacturing raw material according to the second preset process parameters to generate detailed solid structure components of the heat pipe radiator corresponding to the integrated heat pipe radiator model. The detailed solid structure components include an embedded heat pipe cavity and a capillary wick structure. The first preset process parameters include a first laser power range, a first scanning speed range, and a first scanning spacing range. The second preset process parameters include a second laser power range, a second scanning speed range, and a second scanning spacing range. The upper limit of the second laser power range is lower than the upper limit of the first laser power range, and / or the upper limit of the second scanning spacing range is greater than the upper limit of the first scanning spacing range.
[0010] In one feasible implementation, before performing encapsulation and coolant injection processes on the physical structural component to determine the target heat pipe radiator with integrated internal flow channels corresponding to the target semiconductor, the method further includes: The solid structural components are subjected to powder removal treatment and stress-relieving annealing heat treatment in sequence, and the surface of the internal flow channels of the solid structural components is polished or sandblasted to determine the solid structural components after treatment, so as to reduce the flow resistance in the actual process.
[0011] In a second aspect, this application provides a semiconductor heat pipe radiator, which includes a radiator body, a topology-optimized flow channel, and a heat pipe structure. The radiator body includes a radiator shell structure and a flow channel structure. The radiator shell structure includes a shell, and the surface of the shell has an inlet and an outlet. The flow channel structure includes a flow channel and a heat dissipation column, and the heat pipe structure is embedded inside the heat dissipation column.
[0012] In one feasible implementation, the flow channel structure consists of a medium inlet and flow channels dispersed to each of the heat pipe structures for filling the phase change working medium of the heat pipe structures.
[0013] In one feasible implementation, the heat pipe structure includes a heat pipe cavity and a capillary wick, the capillary wick covering the inner wall of the inner wall heat pipe cavity.
[0014] In a third aspect, this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, performs the steps of the method for determining the internal topology flow channels of a heat sink as described above.
[0015] Compared with the prior art, the method for determining the internal topology of the heat sink and the heat pipe heat sink for semiconductors provided in this application are based on obtaining the initial design domain, initial non-design domain, preset heat dissipation performance objective function and preset flow resistance objective function of the heat pipe heat sink for the target semiconductor. The method performs topology design on the internal flow channels of the heat sink for the target semiconductor and determines the optimal internal topology of the heat pipe heat sink. The method provided in this application improves the heat dissipation efficiency and rate for the target semiconductor and greatly enhances the temperature uniformity of the heat pipe in the heat pipe heat sink. Attached Figure Description
[0016] Figure 1 A flowchart illustrating a method for determining the internal topology of a heat sink according to an embodiment of this application is shown. Figure 2 This paper shows a three-dimensional overall structural diagram of a semiconductor heat pipe radiator provided in an embodiment of this application; Figure 3 This paper shows a three-dimensional overall structural diagram of a semiconductor heat pipe radiator provided in an embodiment of this application; Figure 4 This illustration shows a schematic diagram of the relationship between the topology-optimized flow channel and the heat pipe structure in a semiconductor heat pipe radiator provided in an embodiment of this application. Figure 5 This illustration shows a schematic diagram of the topology-optimized flow channel structure and the embedded conformal heat pipe structure in a semiconductor heat pipe radiator provided in an embodiment of this application. Figure 6 One of the schematic diagrams of the capillary wick structure in a semiconductor heat pipe radiator provided in this application embodiment; Figure 7 This is a second schematic diagram of the capillary wick structure in a semiconductor heat pipe radiator provided in an embodiment of this application.
[0017] Figures 2 to 7 The correspondence between the figure labels and figure titles in the accompanying drawings is as follows: 100 Heatsink body; 110 Heatsink shell structure; 111 Inlet; 112 Outlet; 113 Shell; 120 Flow channel structure; 121 Medium inlet; 122 Flow channel; 200 Topology optimized flow channel; 210 Optimized flow channel; 220 Heat dissipation column; 300 Heat pipe structure; 310 Heat pipe cavity; 320 Capillary wick. Detailed Implementation
[0018] To better understand the technical solutions provided in the embodiments of this specification, the technical solutions of the embodiments of this specification will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.
[0019] In this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, without necessarily requiring or implying any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element. The term "two or more" includes two or more cases.
[0020] First, the applicable application scenarios of this application will be introduced. The embodiments provided in this application are applicable to the field of heat dissipation technology for power electronic devices, and in particular, they relate to a method for determining the topological flow channel inside a heat sink and a heat pipe heat sink for semiconductors.
[0021] Currently, traditional semiconductor heat dissipation methods, such as air cooling and aluminum extrusion profile heat sinks, are approaching their performance limits. While water cooling heat sinks are more efficient, their traditional machined flow channels (such as straight grooves and serpentine grooves) are rigid in design, making it difficult to achieve an optimal balance between flow resistance and heat dissipation efficiency. Furthermore, existing semiconductor modules have high-density surface heat distribution underneath. Traditional heat dissipation methods use vapor chambers, but the external heat pipes of vapor chambers have contact thermal resistance, which limits their heat equalization capabilities. Surface contact also greatly limits the heat equalization capabilities of heat pipes.
[0022] Based on this, the embodiments of this application provide a method for determining the topological flow channel inside a heat sink and a heat pipe heat sink for semiconductors. The embodiments provided by this application solve the problem that the traditional machining flow channel design in the prior art is rigid and it is difficult to achieve the optimal balance between flow resistance and heat dissipation efficiency. In addition, there is a high density of surface heat distribution under the existing semiconductor modules. The traditional heat dissipation method is to achieve this through a heat spreader. However, the external heat pipe of the heat spreader has contact thermal resistance, which limits its temperature uniformity. The surface contact greatly limits the temperature uniformity of the heat pipe. The embodiments provided by this application improve the heat dissipation efficiency and rate of heat dissipation of the target semiconductor and greatly enhance the temperature uniformity of the heat pipe in the heat pipe heat sink.
[0023] Figure 1 A flowchart illustrating a method for determining the internal topology of a heat sink, as provided in an embodiment of this application, is shown. Figure 1 As shown, the method for determining the topology of the flow channels within the radiator includes the following steps: S101. Obtain the initial design domain and initial non-design domain of the heat pipe heat sink for heat dissipation of the target semiconductor.
[0024] In this step, the embodiments provided in this application, when wanting to determine the topological flow channels inside the heat sink, first need to obtain the initial design domain and initial non-design domain of the heat pipe heat sink for heat dissipation of the target semiconductor, in order to clarify which parts of the heat pipe heat sink can be designed by the algorithm.
[0025] In the embodiments provided in this application, the selection of the initial design domain and the initial non-design domain of the heat pipe radiator can be customized and used according to different application scenarios and usage conditions.
[0026] S102. Based on the initial design domain, the initial non-design domain, the preset heat dissipation performance objective function, and the preset flow resistance objective function, the topology design of the flow channel inside the heat sink of the target semiconductor is performed to determine the optimal topology flow channel inside the heat pipe heat sink. The optimal topology flow channel is used to characterize the topology flow channel structure with the best heat dissipation performance.
[0027] In this step, after determining the initial design domain and initial non-design domain of the heat pipe radiator, the embodiments provided in this application begin to construct a preset heat dissipation performance objective function and a preset flow resistance objective function corresponding to the heat pipe radiator. After the construction is completed, the flow channel design inside the heat sink of the target semiconductor is determined based on the above conditions and constraints, and the optimal topology flow channel corresponding to the heat pipe radiator is determined accordingly.
[0028] For example, based on the initial design domain, the initial non-design domain, a preset heat dissipation performance objective function, and a preset flow resistance objective function, the flow channel topology of the heat sink inside the target semiconductor is designed to determine the optimal flow channel topology inside the heat pipe heat sink, including: Based on the preset level set function and the maximum heat dissipation performance index corresponding to the target semiconductor, a preset heat dissipation performance objective function is constructed. Based on the preset heat dissipation performance objective function, the preset flow resistance objective function, and the maximum volume fraction constraint of the fluid domain, the flow channel inside the heat sink of the target semiconductor is topologically designed to determine the optimal topological flow channel inside the heat pipe heat sink.
[0029] It is understood that the embodiments provided in this application can utilize a preset level set function thermal-fluid coupling topology optimization method, and establish a preset heat dissipation performance objective function with the goal of maximizing heat dissipation performance; and determine a preset flow resistance objective function with the goal of minimizing flow resistance.
[0030] Here, the optimal topology of the flow channel in the embodiments provided in this application can be specifically a water-cooled flow channel.
[0031] The preset heat dissipation performance objective function in the embodiments provided in this application can be specifically as follows: ; Where Q is used to characterize the preset heat dissipation performance objective function, and maximizing the heat generation in the solid region is equivalent to maximizing the heat dissipation performance. The above formula is used to determine the topology of the flow channel that maximizes the heat dissipation performance.
[0032] β is used to characterize the heat transfer function; T is used to characterize the temperature.
[0033] The preset heat dissipation performance objective function determined by considering the minimum energy dissipation of the flow field in the embodiments provided in this application can be specifically as follows: ; in, A target function used to characterize the preset heat dissipation performance; Used to characterize the velocity gradient tensor.
[0034] Therefore, the objective function for topology optimization can be determined: ; in, and All are weighting coefficients, satisfying .
[0035] Here, the embodiments provided in this application define the topology optimization objective function with a preset heat dissipation performance objective function and a preset flow resistance objective function, and then use the maximum volume fraction of the fluid domain as a constraint condition and the level set function as a design variable to establish a fluid-thermal multiphysics coupled topology optimization design based on a body-fitted mesh. The specific optimization design formula is as follows: ; in, Used to characterize volume fraction constraints; Used to characterize the upper limit of the permissible fluid domain volume fraction; Used to characterize energy dissipation constraints; Used to characterize the upper limit of allowable fluid dissipation energy; the above physical quantity parameters are all customized according to requirements.
[0036] Here, the maximum volume fraction in the embodiments provided in this application can be set to Furthermore, the maximum flow field dissipation energy can be set to... .
[0037] For example, after topologically designing the flow channels inside the heat sink of the target semiconductor based on the initial design domain, the initial non-design domain, the preset heat dissipation performance objective function, and the preset flow resistance objective function, and determining the optimal topological flow channels inside the heat pipe heat sink, the method further includes: Based on the optimal topology flow channel and the preset 3D reconstruction model, an integrated heat pipe radiator model with internal flow channels corresponding to the target semiconductor is constructed; based on the integrated heat pipe radiator model and the preset green laser selective melting technology, the physical structural components corresponding to the integrated heat pipe radiator model are determined; the physical structural components are encapsulated and coolant is injected to determine the target heat pipe radiator with internal flow channels corresponding to the target semiconductor.
[0038] It should be noted that, after determining the optimal topology flow channel, the embodiments provided in this application will generate a three-dimensional model file suitable for additive manufacturing based on a preset three-dimensional reconstruction model and perform Boolean operations, mesh generation, and support addition on the integrated model. That is, an integrated heat pipe radiator model with internal flow channels corresponding to the target semiconductor will be constructed. Then, selective preset green laser selective melting technology will be used, and copper alloy powder will be used to melt and form an integrated radiator body, topology-optimized flow channel structure, and heat pipe structure layer by layer. This will construct the solid structural components corresponding to the integrated heat pipe radiator model. Then, the solid structural components will be encapsulated and coolant injected to determine the target heat pipe radiator with internal flow channels corresponding to the target semiconductor.
[0039] It is understood that the method of encapsulating and injecting coolant into the solid structural components in the embodiments provided in this application can be specifically as follows: evacuating the cavity of the embedded heat pipe to the target vacuum level through the working fluid injection port preset on the solid component of the heat sink; injecting a preset amount of phase change working fluid into the cavity of the embedded heat pipe through the working fluid injection port; and performing laser sealing or brazing sealing on the working fluid injection port to obtain a new type of high-power, high-efficiency heat pipe heat sink with high heat dissipation efficiency and reliable and stable service.
[0040] The preset green laser selective melting technology provided in this application refers to a technology that uses green laser with a wavelength in the range of 532-556nm as an energy source. It scans the alloy powder bed layer by layer according to the path planned in the three-dimensional CAD slicing model. The scanned alloy powder achieves the effect of metallurgical bonding through melting and solidification, and finally obtains the metal parts designed in the model. Because the green laser selective melting forming technology has significant advantages in the high-density and high-performance forming of copper alloy parts, this technology is widely used in the manufacturing of complex copper alloy parts.
[0041] For example, within a preset region of an integrated heat pipe radiator model, an embedded heat pipe cavity and capillary wick structure conforming to an optimal topological flow channel are designed, the method including: Based on the centerline of the optimal topology flow channel, the center reference path of the optimal topology flow channel is determined; based on the center reference path, the envelope space of the first preset thickness is determined, and the envelope space of the first preset thickness is defined as the embedded heat pipe cavity, and the porous features designed on the embedded heat pipe cavity are defined as capillary wick structure, wherein the capillary wick structure is any one of the three-period minimal surface structure, lattice structure and random porous structure.
[0042] It should be noted that, after determining the optimal topology flow channel, the embodiment design provided in this application will design a center reference path inside the optimal topology flow channel to determine the envelope space of the first preset thickness, define the envelope space of the first preset thickness as the embedded heat pipe cavity, and define the porous features designed on the embedded heat pipe cavity as a capillary wick structure for heat transfer.
[0043] It is understood that the embedded heat pipe cavity shape in the embodiments provided in this application can be cylindrical, square, or a non-circular structure conforming to the topological flow channel shape, and the capillary wick structure can be loose or porous. For example, based on an integrated heat pipe radiator model and a pre-defined green laser selective melting technique, the corresponding solid structural components of the integrated heat pipe radiator model are determined, including: The integrated heat pipe radiator model is sliced to determine a processing file including multiple two-dimensional contours. Based on the processing file, a preset green laser beam is controlled to scan the additive manufacturing raw material according to the first preset process parameters to generate the basic solid structure components of the heat pipe radiator corresponding to the integrated heat pipe radiator model. After generating the basic solid structure components, the preset green laser beam is controlled to scan the additive manufacturing raw material according to the second preset process parameters to generate the detailed solid structure components of the heat pipe radiator corresponding to the integrated heat pipe radiator model. The detailed solid structure components include an embedded heat pipe cavity and a capillary core structure. The first preset process parameters include a first laser power range, a first scanning speed range, and a first scanning spacing range. The second preset process parameters include a second laser power range, a second scanning speed range, and a second scanning spacing range. The upper limit of the second laser power range is lower than the upper limit of the first laser power range, and / or the upper limit of the second scanning spacing range is greater than the upper limit of the first scanning spacing range.
[0044] It should be noted that the first laser power range, first scanning speed range, first scanning spacing range, second laser power range, second scanning speed range, and second scanning spacing range in the embodiments provided in this application can all be customized and used according to different application scenarios and usage scenarios.
[0045] It is understood that the first laser power in the embodiments provided in this application may be 460W; the first scanning speed may be 800mm / s; the first scanning interval may be 0.08mm; the second laser power may be 350W; the second scanning speed may be 900mm / s; and the second scanning interval range may be 0.2mm.
[0046] Here, the forming process parameters of the heat sink body in the embodiments provided in this application are: spot diameter 0.02-0.06mm, powder layer thickness 0.03-0.05mm, laser power 400-500W, scanning speed 600-1200mm / s, and scanning spacing 0.04-0.12mm.
[0047] In the embodiments provided in this application, when the capillary core is designed as a porous capillary structure, the parameters are: spot diameter 0.02-0.06mm, powder layer thickness 0.03-0.05mm, laser power 300-500W, scanning speed 600-3000mm / s, and scanning spacing 0.06-0.3mm.
[0048] In the embodiments provided in this application, the additive manufacturing raw materials can be customized and used according to different application scenarios and usage conditions. The embodiments provided in this application determine that high thermal conductivity copper alloy powder is used as the additive manufacturing raw material.
[0049] In the above, the material of the high thermal conductivity copper alloy powder in the embodiments provided in this application can be specifically, but is not limited to, CuCrZr and GrCop series copper alloys or copper alloy materials with similar high thermal conductivity and high strength suitable for SLM technology.
[0050] For example, the embodiments provided in this application may further include: performing powder removal treatment and stress-relieving annealing heat treatment on the solid structural components in sequence, and polishing or sandblasting the surface of the internal flow channels of the solid structural components to determine the treated solid structural components, so as to reduce the flow resistance in the actual process.
[0051] It should be noted that the embodiments provided in this application can specifically employ a vacuum annealing furnace for stress-relief annealing heat treatment.
[0052] Compared with the prior art, the method for determining the internal topology flow channel of the heat sink provided in this application is based on obtaining the initial design domain, initial non-design domain, preset heat dissipation performance objective function and preset flow resistance objective function of the heat pipe heat sink for heat dissipation of the target semiconductor. The method performs topology design on the flow channel inside the heat sink of the target semiconductor and determines the corresponding optimal topology flow channel inside the heat pipe heat sink. The method provided in this application improves the heat dissipation efficiency and rate of heat dissipation of the target semiconductor and greatly enhances the temperature uniformity of the heat pipe in the heat pipe heat sink.
[0053] Figure 2 This paper presents a three-dimensional overall structural diagram of a semiconductor heat pipe radiator provided in an embodiment of this application. Figure 3 The diagram shows a schematic of the inlet and outlet structures in the flow channel structure of a semiconductor heat pipe radiator provided in an embodiment of this application. Figure 4 This diagram illustrates the relationship between the topology-optimized flow channel and the heat pipe structure in a semiconductor heat pipe radiator according to an embodiment of this application. Figures 2-4 As shown, the semiconductor heat pipe radiator includes a radiator body 100, a topology-optimized flow channel 200, and a heat pipe structure 300. The radiator body 100 includes a radiator shell structure 110 and a flow channel structure 120. The radiator shell structure 110 includes a shell 113, and the surface of the shell 113 is provided with an inlet 111 and an outlet 112. The flow channel structure 120 includes a flow channel 122 and a medium inlet 121. The topology-optimized flow channel 200 includes a heat dissipation column 220, and the heat pipe structure 300 is embedded inside the heat dissipation column 220. The topology-optimized flow channel 200 is distributed inside the radiator body 100. The topology-optimized flow channel 200 can be a complex three-dimensional structure such as multi-branched, variable cross-section, biomimetic tree-like, or honeycomb-like.
[0054] It is understood that the bottom of the heat sink body 100 in the embodiments provided in this application is the mounting plane of the power module of the external semiconductor. The thickness of the heat sink shell 113 is 1-3mm. The diameter of the water inlet 111 and the water outlet 112 can be set but is not limited to 2-4mm. The substrate of the mounting plane of the power module of the external semiconductor is selected from 304 stainless steel substrate with good wettability with the component material and a coefficient of linear expansion similar to that of the component material. The thickness of the substrate is t≥45mm.
[0055] The diameter of the heat pipe structure 300 can be set but is not limited to 1-3mm, and the thickness of the heat pipe structure 300 can be set but is not limited to 0.5-1.5mm; the width of the optimized flow channel 210 can be set but is not limited to 0.5-3mm.
[0056] For example, the flow channel structure 120 consists of a medium inlet 121 and flow channels 210122 distributed to each heat pipe structure 300 for filling the phase change working medium of the heat pipe structure 300.
[0057] For example, the heat pipe structure 300 includes a heat pipe cavity 310 and a capillary wick 320. The capillary wick 320 covers the interior of the heat pipe cavity 310, and the shape of the capillary wick 320 is a non-circular structure conforming to the topology-optimized flow channel 200 of the heat pipe structure 300. Its specific structure is integrally formed by additive manufacturing. In the embodiments provided in this application, the additive material can be specifically set as a high thermal conductivity copper alloy CuCrZr, GrCop series copper alloy, or a copper alloy material suitable for SLM technology with similar high thermal conductivity and high strength. The particle size of the copper alloy material is 35-53μm, and the copper alloy powder is dried in a vacuum drying oven. The scraper used for scraping and leveling in additive manufacturing is a flexible scraper.
[0058] Figure 5 This illustration shows a schematic diagram of the topology-optimized flow channel structure and the embedded conformal heat pipe structure in a semiconductor heat pipe radiator provided in an embodiment of this application. Figure 6 This illustration shows one of the structural schematic diagrams of a capillary wick in a semiconductor heat pipe radiator provided in an embodiment of this application. Figure 7 This is a second schematic diagram of the capillary wick structure in a semiconductor heat pipe radiator provided in an embodiment of this application.
[0059] The following example illustrates the specific structural design of a heat pipe radiator: The shell 113 of the radiator body 100 has a thickness of 1-3 mm, the inlet 111 and outlet 112 have a diameter of 3 mm, the flow channel structure 120 of the heat pipe medium input channel structure has a diameter of 2.5 mm, and the dimension of the flow into the heat pipe cavity is 1.5 mm. Furthermore, the embodiment provided in this application uses dimensionless governing equations to solve the system flow and heat transfer state, wherein at the inlet boundary, the maximum flow velocity is... It is parabolically distributed along the inlet boundary, and the temperature is set to... The pressure is evenly distributed at the outlet boundary, and its magnitude is set to... The temperature conditions are set to adiabatic conditions, i.e. Finally, the optimization results of the topology-optimized flow channel are obtained, and the topology-optimized flow channel 200 is reconstructed using modeling software in a three-dimensional flow channel model. The width of the flow channel 210 is 0.5-3mm, and it is a complex three-dimensional structure with multiple branches, variable cross-section, biomimetic tree-like and honeycomb-like structures. The modeling software is used to design a conformal heat pipe structure 300 with high heat transfer embedded inside the topology flow channel entity, including a heat pipe cavity 310 and a capillary wick 320. The thickness of the heat pipe structure 300 is 1mm, and the cavity shape is an irregular structure conforming to the shape of the topology flow channel. The capillary wick structure can be a loose or porous structure 321, a lattice 322 or a periodic structure such as TPMS 323.
[0060] It should be noted that the heat pipe radiator provided in this application includes a radiator body capable of high-power heat dissipation, a topology-optimized flow channel, and a conformal heat pipe structure with high heat transfer embedded within.
[0061] The housing 113 of the radiator housing structure 110 is used for the input and output of the main liquid cooling medium.
[0062] In the embodiments provided in this application, the capillary core may be a loose or porous structure, a lattice, or a periodic structure such as TPMS.
[0063] The embodiments provided in this application can create a reliable heat sink structure that can conduct heat efficiently and dissipate heat quickly. It can take into account the advantages of efficient heat dissipation of topological flow channels and the rapid heat diffusion capability of heat pipes, realize low thermal resistance, low heat capacity and high reliability cooling of high power modules, ensure the best heat transfer efficiency between coolant and solid, and the embedded heat pipe structure can greatly improve the temperature uniformity of local hot spots, thereby reducing the junction temperature of high power semiconductors.
[0064] The embodiments provided in this application employ a copper alloy additive manufacturing method, which greatly improves the design freedom of complex heat sink structural parts, allowing for the realization of complex internal structures with optimal performance that cannot be processed by traditional processes. This method is simple, practical, and easy to implement.
[0065] The flow channel structure of the topology in the embodiments provided in this application can avoid sharp turns and flow dead zones, resulting in smaller pressure drop and lower pump power loss under the same heat dissipation performance.
[0066] This application also provides a computer-readable storage medium storing a computer program, which, when executed by a processor, can perform the above-described actions. Figure 1 The steps of the method for determining the topological flow channel inside the heat sink in the method embodiment shown are described in detail in the method embodiment, and will not be repeated here.
[0067] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.
[0068] It should be noted that the descriptions of each embodiment in the above embodiments have different focuses. For parts that are not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.
[0069] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-readable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-readable program code.
[0070] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded computer, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create a machine for implementing the flowchart illustrations. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.
[0071] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1One or more processes and / or boxes Figure 1 The function specified in one or more boxes.
[0072] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.
[0073] This application also provides a computer program product, which includes computer software instructions that, when executed on a processing device, cause the processing device to execute a process for determining the topology flow path within a heat sink.
[0074] A computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the flow or function according to the embodiments of this application is generated. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions may be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium may be any available medium that a computer can store or a data storage device such as a server or data center that integrates one or more available media. The available medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium (e.g., solid-state disk (SSD)).
[0075] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.
[0076] In the several embodiments provided in this application, it should be understood that the disclosed devices, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between devices or units, and may be electrical, mechanical, or other forms.
[0077] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0078] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0079] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0080] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
[0081] Although preferred embodiments have been described in this specification, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this specification.
[0082] Obviously, those skilled in the art can make various modifications and variations to this specification without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims and their equivalents, this specification is also intended to include such modifications and variations.
Claims
1. A method for determining the topological flow channels within a radiator, characterized in that, The method for determining the internal topology of the heat sink includes: Obtain the initial design domain and initial non-design domain of the heat pipe heat sink for heat dissipation of the target semiconductor; Based on the initial design domain, the initial non-design domain, the preset heat dissipation performance objective function, and the preset flow resistance objective function, the flow channel inside the heat sink of the target semiconductor is topologically designed to determine the optimal topological flow channel inside the heat pipe heat sink. The optimal topological flow channel is used to characterize the topological flow channel structure with optimal heat dissipation performance.
2. The method for determining the internal topology of a radiator according to claim 1, characterized in that, The step of performing topology design on the internal flow channels of the heat sink of the target semiconductor based on the initial design domain, the initial non-design domain, the preset heat dissipation performance objective function, and the preset flow resistance objective function, and determining the optimal topology flow channels corresponding to the heat pipe heat sink, includes: Based on the preset level set function and the maximum heat dissipation performance index corresponding to the target semiconductor, a preset heat dissipation performance objective function is constructed. Based on the preset heat dissipation performance objective function, the preset flow resistance objective function, and the maximum volume fraction constraint of the fluid domain, the flow channel inside the heat sink of the target semiconductor is topologically designed to determine the optimal topological flow channel inside the heat pipe heat sink.
3. The method for determining the internal topology of a radiator according to claim 1, characterized in that, After performing topology design on the internal flow channels of the heat sink of the target semiconductor based on the initial design domain, the initial non-design domain, the preset heat dissipation performance objective function, and the preset flow resistance objective function, and determining the optimal topology flow channels corresponding to the heat pipe heat sink, the method further includes: Based on the optimal topology flow channel and the preset three-dimensional reconstruction model, an integrated heat pipe heat sink model with internal flow channels corresponding to the target semiconductor is constructed. Based on the integrated heat pipe radiator model and the preset green laser selective melting technology, the corresponding solid structural components of the integrated heat pipe radiator model are determined. The physical structural components are encapsulated and coolant is injected to determine the target heat pipe radiator with integrated internal flow channels corresponding to the target semiconductor.
4. The method for determining the internal topology of a radiator according to claim 3, characterized in that, Within a preset area of the integrated heat pipe radiator model, an embedded heat pipe cavity and capillary wick structure conforming to the optimal topological flow channel are designed. The method includes: Based on the centerline of the optimal topology flow channel, determine the center reference path of the optimal topology flow channel; Based on the central reference path, an envelope space of a first preset thickness is determined, and the envelope space of the first preset thickness is defined as the embedded heat pipe cavity. The porous features designed on the embedded heat pipe cavity are defined as capillary wick structures, wherein the capillary wick structure is any one of a three-period minimal surface structure, a lattice structure, and a random porous structure.
5. The method for determining the internal topological flow channels of a radiator according to claim 3, characterized in that, The process of determining the physical structural components corresponding to the integrated heat pipe radiator model based on the integrated heat pipe radiator model and the preset green laser selective melting technology includes: The integrated heat pipe radiator model is sliced to determine the processing file including multiple two-dimensional contours; Based on the processing file, a preset green laser beam is controlled to scan the additive manufacturing raw material according to the first preset process parameters to generate the basic solid structure components of the integrated heat pipe radiator model corresponding to the heat pipe radiator. After generating the basic solid structure component, the preset green laser beam is controlled to scan the additive manufacturing raw material according to the second preset process parameters to generate detailed solid structure components of the heat pipe radiator corresponding to the integrated heat pipe radiator model. The detailed solid structure components include an embedded heat pipe cavity and a capillary wick structure. The first preset process parameters include a first laser power range, a first scanning speed range, and a first scanning spacing range. The second preset process parameters include a second laser power range, a second scanning speed range, and a second scanning spacing range. The upper limit of the second laser power range is lower than the upper limit of the first laser power range, and / or the upper limit of the second scanning spacing range is greater than the upper limit of the first scanning spacing range.
6. The method for determining the internal topology of a radiator according to claim 1, characterized in that, Before performing encapsulation and coolant injection processes on the physical structural component to determine the target heat pipe radiator with integrated internal flow channels corresponding to the target semiconductor, the method further includes: The solid structural components are subjected to powder removal treatment and stress-relieving annealing heat treatment in sequence, and the surface of the internal flow channels of the solid structural components is polished or sandblasted to determine the solid structural components after treatment, so as to reduce the flow resistance in the actual process.
7. A semiconductor heat pipe radiator, using the method for determining the internal topology of the radiator as described in any one of claims 1-8, characterized in that, The semiconductor heat pipe radiator includes a radiator body, a topology-optimized flow channel, and a heat pipe structure. The radiator body includes a radiator shell structure and a flow channel structure. The radiator shell structure includes a shell, and the surface of the shell has an inlet and an outlet. The flow channel structure includes a flow channel and a heat dissipation column. The heat pipe structure is embedded inside the heat dissipation column.
8. The semiconductor heat pipe radiator according to claim 7, characterized in that, The flow channel structure consists of a medium inlet and flow channels that disperse to each of the heat pipe structures, and is used for filling the phase change working medium of the heat pipe structures.
9. The semiconductor heat pipe radiator according to claim 7, characterized in that, The heat pipe structure includes a heat pipe cavity and a capillary wick, with the capillary wick covering the inner wall of the heat pipe cavity.
10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when executed by a processor, performs the steps of the method for determining the internal topology flow channels of a heat sink as described in any one of claims 1-6.