Ion implantation diffusion process for semiconductor device processing

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and particularly discloses an ion implantation diffusion process for semiconductor device processing, the ion implantation diffusion process for semiconductor device processing comprises a turntable, a driving structure is arranged at the bottom, and a mounting seat is arranged at the bottom of the driving structure and is used for driving the turntable to rotate; and the mounting block is arranged on the outer side of the driving structure, is used for protecting the driving structure mounting assembly, is arranged on the turntable and the mounting block and is used for adsorbing the silicon wafer. The number of the adsorption holes in the adsorption disc can be adjusted through the adjusting structure according to the size of a silicon wafer, so that the adsorption disc can adsorb the silicon wafers of different sizes in time, meanwhile, through the action of an electric telescopic rod and a third check block, when the adjusted adsorption disc adsorbs the silicon wafers, the silicon wafers can be limited, and the adsorption efficiency is improved. When the adsorption disc adsorbs a small-size silicon wafer, displacement is generated during ion implantation, the edge of the silicon wafer is prevented from tilting, and the ion effect is further prevented from being affected.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor manufacturing, and particularly relates to an ion implantation and diffusion process for semiconductor device processing. BACKGROUND

[0002] The ion implantation and diffusion process is a core technology for realizing "precise doping" in the field of semiconductor device processing. The ion implantation process, as a core link in chip circuit manufacturing, involves accelerating ions to a specific energy range (usually in the order of keV to MeV), and then implanting them into the surface layer of a solid material to form a PN junction. The ion implantation process uses an ion implanter to obtain the required ions from an ion source, and then accelerates them to obtain an ion beam current of several thousand electron volts of energy. The ion implantation is used for semiconductor materials, large-scale integrated circuits and devices, and also for surface modification and film preparation processes of metal materials.

[0003] In the prior art, the ion implanter mainly includes an ion source system, a mass analysis system, an acceleration system, a beam transmission and correction system, a scanning and target chamber system, and a vacuum system. The silicon wafer is placed on a turntable in the target chamber, and the silicon wafer is adsorbed by an adsorption disc, and then the ion beam is implanted. However, during use, different adsorption discs need to be replaced when adsorbing silicon wafers of different sizes, so that the silicon wafer cannot be adjusted in time according to the different sizes of the silicon wafer, which causes the edge of the silicon wafer to be easily warped, affecting the efficiency of the silicon wafer implanting the ion beam.

[0004] Therefore, it is necessary to invent an ion implantation and diffusion process for semiconductor device processing to solve the above problems. SUMMARY

[0005] In view of the above problems, the present application provides an ion implantation and diffusion process for semiconductor device processing to solve the problems raised in the background art.

[0006] To achieve the above purpose, the present application provides the following technical scheme: An ion implantation and diffusion process for semiconductor device processing, comprising the following steps: Step 1: first clean the semiconductor substrate (such as a silicon wafer) and patternize (define the doping area) by photolithography; Step 2: use an ion implanter to accelerate and implant specific impurity ions (such as P and B) into the target area to form a non-equilibrium doping layer; Step three: restart the vacuum system will start the molecular pump, diffusion pump equipment, to the ion source cavity, mass analyzer channel, acceleration tube, beam transmission pipeline and target chamber and other ion flow and reaction area vacuum, and then make the ion source system start to work, so that the ion source generates a mixed ion beam, the target ion is screened out by the mass analysis system, the ion injection kinetic energy is given by the acceleration system, the beam transmission and correction system optimizes the beam state, and finally the ion beam is uniformly injected into the silicon wafer by the scanning and target chamber system. Step four: place the injected substrate into a high temperature furnace for heating, repair the lattice damage caused by ion implantation, and promote the diffusion of implanted ions in the substrate to form a uniform doped layer.

[0007] Further, the ion implanter comprises: A turntable is arranged inside the ion implanter, and a driving structure is arranged at the bottom of the turntable. An installation seat is arranged at the bottom of the driving structure, and the driving structure is used to drive the rotation of the turntable. An installation block is arranged outside the driving structure, and is used to protect the driving structure. An installation assembly is arranged on the turntable and the installation block, and is used to adsorb the silicon wafer. The installation assembly comprises: A fixed block, an adsorption disc, a vacuum cavity, an adsorption structure, and an adjusting structure. A plurality of fixed blocks are fixedly installed at the top of the turntable. A vacuum cavity is formed in the middle of each fixed block. An adsorption disc is arranged at the top of the vacuum cavity. An adsorption hole is formed in the adsorption disc, and is used to place the silicon wafer. An adsorption structure is arranged in the installation block. An adjusting structure is arranged in the fixed block and at the bottom of the adsorption disc, and is used to adjust the adsorption effect of the adsorption disc.

[0008] Further, the installation block is fixedly connected to the bottom of the turntable, and the bottom of the installation block is rotationally connected to the top of the installation seat. The fixed blocks and the adsorption structure are circularly arranged around the center of the turntable. The diameter of the adsorption hole in the middle of the adsorption disc is larger than that of the adsorption hole at the edge of the adsorption disc. The density of the adsorption hole in the middle of the adsorption disc is smaller than that of the adsorption hole at the edge of the adsorption disc.

[0009] Further, the adjusting structure comprises a moving disc, a first stop block, a second stop block, a first electric push rod, a second electric push rod, a connecting block, and a third electric push rod. The moving disc is arranged at the bottom of the adsorption disc. The first electric push rod and the second electric push rod are fixedly connected to the inside of the moving disc. The first stop block and the second stop block are fixedly connected to the top of the first electric push rod and the second electric push rod, respectively. The connecting block is fixedly connected to the outer wall of the moving disc, and the third electric push rod is fixedly connected to the connecting block.

[0010] Further, the first stop block and the second stop block are both arranged at the top of the moving disc, and the first stop block and the second stop block are attached to the bottom of the adsorption disc. The first stop block and the second stop block are arranged corresponding to the adsorption hole at the edge of the adsorption disc. A through hole is formed in the middle of the moving disc, and the through hole is arranged corresponding to the adsorption hole in the middle of the adsorption disc. The diameter of the adsorption hole is smaller than that of the adsorption hole in the middle of the adsorption disc.

[0011] Further, the outer wall of the adsorption disc is in sliding connection with the inner wall of the vacuum cavity, a groove is formed in the bottom of the fixing block and the top of the mounting block, the third electric push rod is fixedly connected with the groove in the interior of the mounting block, and the top of the third electric push rod extends into the groove in the bottom of the fixing block through the mounting block, the connecting block extends into the groove in the bottom of the fixing block through the vacuum cavity, the connecting block is in sliding connection with the inner wall of the groove in the bottom of the fixing block, and the connecting block and the third electric push rod are circularly arranged in the center of the moving disc.

[0012] Further, the adsorption structure comprises an adsorption pump, an adsorption pipe and a control valve, the adsorption pump is fixedly connected in the mounting block, the adsorption pump is fixedly connected with the adsorption pipe at the top, the adsorption pipe is fixedly connected with the control valve at the top end, the top end of the adsorption pipe is fixedly connected with the bottom of the mounting block, the adsorption pipe is communicated with the vacuum cavity, and the adsorption pump, the adsorption pipe and the control valve are located in the middle of the third electric push rod.

[0013] Further, two annular grooves are formed in the top of the adsorption disc, the two annular grooves are respectively located between the adsorption holes at the edges of the adsorption disc, between the adsorption holes at the edges of the adsorption disc and the adsorption holes at the middle of the adsorption disc, and an electric telescopic rod is fixedly connected in each of the two annular grooves, and a third stop block is fixedly connected at the top of each electric telescopic rod.

[0014] Further, two mounting ports are formed in the top of the fixing block and located at the two sides of the adsorption disc, a limiting block is in sliding connection in each of the two mounting ports, the limiting block is fixedly connected with a limiting rod, the limiting rod is in insertion connection with the adsorption disc, an installation groove is formed in the side of the limiting block close to the limiting rod, and the installation groove is fixedly connected with the inner wall of the mounting port through the first spring.

[0015] Further, a fixing ring is fixedly connected at each of the upper end and the lower end of the outer side of the moving disc, the fixing ring is fixedly connected with the inner wall of the vacuum cavity, the connecting block is located between two adjacent fixing rings, and the adsorption disc is located at the top of the fixing ring at the top end of the moving disc.

[0016] Technical effects and advantages of the present application: 1、The number of adsorption holes on the adsorption disc can be adjusted according to the size of the silicon wafer through the adjusting structure, so that the adsorption disc can timely adsorb silicon wafers of different sizes, and through the action of the electric telescopic rod and the third stop block, the adjusted adsorption disc can limit the silicon wafer when adsorbing the silicon wafer, so as to prevent the displacement of the adsorption disc when adsorbing a small-size silicon wafer during ion injection, so as to prevent the edge of the silicon wafer from being raised, and to affect the effect of the ions.

[0017] 2、The application can take off the moving disc from the fixed block for replacement by moving the limiting block, the limiting rod and the first spring, and can improve the stability of the adsorption disc installation through the fixing ring and the limiting structure, so that when the adsorption structure absorbs the silicon wafer through the adsorption hole, the wear and deformation of the adsorption disc structure are reduced, the service life of the adsorption disc is prolonged, the structure damage is avoided, and the use is facilitated. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 is the overall structure schematic diagram of the embodiment of the application; Figure 2 is the internal structure diagram of the mounting block of the embodiment of the application; Figure 3 is the sectional view of the mounting block of the embodiment of the application; Figure 4 is the top structure diagram of the rotating disc of the embodiment of the application; Figure 5 is the internal structure diagram of the fixed block of the embodiment of the application; Figure 6 is the structure diagram of the adsorption disc, the limiting block and the limiting rod of the embodiment of the application; Figure 7 is the structure diagram of the adsorption disc of the embodiment of the application; Figure 8 is the sectional view of the moving disc of the embodiment of the application; Figure 9 is the structure diagram of the fixed ring of the embodiment of the application.

[0019] In the figure: 1, rotating disc; 2, mounting block; 3, fixed block; 4, adsorption disc; 5, vacuum cavity; 6, adsorption hole; 7, motor; 8, moving disc; 9, first stop block; 10, second stop block; 11, first electric push rod; 12, second electric push rod; 13, third electric push rod; 14, connecting block, 15, adsorption pump; 16, adsorption pipe; 17, electric telescopic rod; 18, third stop block; 19, limiting block; 20, limiting rod; 21, first spring; 22, fixed ring. DETAILED DESCRIPTION

[0020] To make the purpose, technical scheme and advantages of the embodiment of the application more clear, the technical scheme of the application will be described clearly and completely below in combination with the embodiments.

[0021] The application provides an ion implantation diffusion process for semiconductor device processing, which comprises the following steps: Step one: first, clean the semiconductor substrate (such as a silicon wafer) and perform photoetching patterning (define a doped region); Step two: then, use an ion implanter to accelerate and implant specific impurity ions (such as P and B) into a target region to form a non-equilibrium doped layer; Step three: restart the vacuum system will start the molecular pump, diffusion pump equipment, to the ion source cavity, mass analyzer channel, acceleration tube, beam transmission pipeline and target chamber and all the ion flow and reaction area vacuum, and then make the ion source system start to work, so that the ion source generates a mixed ion beam, the target ion is screened out by the mass analysis system, the ion injection kinetic energy is given by the acceleration system, the beam transmission and correction system optimizes the beam state, and finally the ion beam is uniformly injected into the silicon wafer by the scanning and target chamber system; Step four: place the injected substrate in a high temperature furnace for heating, repair the lattice damage caused by ion implantation, and promote the diffusion of implanted ions in the substrate to form a uniform doped layer.

[0022] As shown in Figures 1 to 4 The ion implanter includes a turntable 1, a driving structure, a mounting block 2, and a mounting assembly. The turntable 1 is arranged inside the ion implanter, the bottom of the turntable 1 is provided with a driving structure, the bottom of the driving structure is provided with a mounting seat for driving the turntable 1 to rotate, and the mounting block 2 is arranged outside the driving structure for protecting the driving structure. The driving structure includes a motor 7 and a rotating shaft. The bottom of the motor 7 is fixedly connected with the top of the mounting seat, the output end of the motor 7 is fixedly connected with the rotating shaft, the top end of the rotating shaft is fixedly connected with the bottom of the turntable 1, and the motor 7 and the rotating shaft are located in the middle of the mounting block 2. The mounting assembly is arranged on the turntable 1 and the mounting block 2, and is used for adsorbing silicon wafers. The mounting assembly includes a fixed block 3, an adsorption disc 4, a vacuum cavity 5, an adsorption structure, and an adjusting structure. A plurality of fixed blocks 3 are fixedly installed on the top of the turntable 1, which facilitates the placement of multiple silicon wafers. The middle of the fixed block 3 is provided with a vacuum cavity 5. The inside top of the vacuum cavity 5 is provided with an adsorption disc 4. The adsorption disc 4 is provided with an adsorption hole 6 for placing a silicon wafer. The mounting block 2 is provided with an adsorption structure. The bottom of the fixed block 3 and the adsorption disc 4 are provided with an adjusting structure for adjusting the adsorption effect of the adsorption disc 4.

[0023] The adsorption structure includes an adsorption pump 15, an adsorption pipe 16, and a control valve. The adsorption pump 15 is fixedly connected in the mounting block 2. The top of the adsorption pump 15 is fixedly connected with the adsorption pipe 16. The top of the adsorption pipe 16 is fixedly connected with the control valve. The top of the adsorption pipe 16 is fixedly connected with the bottom of the mounting block 2. The adsorption pipe 16 communicates with the vacuum cavity 5. The adsorption pump 15, the adsorption pipe 16, and the control valve are all located in the middle of the third electric push rod 13.

[0024] By optimizing ion implantation parameters, using uniform beam scanning technology, controlling ion dose error, avoiding local concentration deviation; increasing pre-cleaning plasma etching step, completely removing silicon wafer surface adsorbed impurities, reducing impurity interference during implantation; annealing process uniform temperature design reduces ion implantation energy, combined with low temperature cooling of the substrate (-100℃ to room temperature), reduces impurity traps caused by lattice damage, and optimizes ion source filtering system, removes impurity ions (such as oxygen, carbon), and increases the plasma treatment step after annealing, fills the lattice vacancy, reduces the defect center formed by the aggregation of impurities, and then through precise control of the impurity concentration distribution of the silicon wafer (uniformity, gradient, depth), the response of the semiconductor device is improved.

[0025] When the pretreated silicon wafer is placed on the adsorption disc 4, the moving disc 8 is moved to the bottom end of the vacuum chamber 5 by adjusting the structure, the bottom end of the vacuum chamber 5 is exposed, and then the control valve is opened. By starting the adsorption pump 15, the adsorption tube 16 extracts air from the vacuum chamber 5, and then the silicon wafer can be adsorbed on the adsorption disc 4 through the action of the adsorption hole 6. Starting the vacuum system will first start the molecular pump and diffusion pump equipment to vacuum all ion flow and reaction areas such as ion source cavity, mass analyzer channel, acceleration tube, beam transmission pipeline and target chamber. Then the ion source system starts to work, the ion source generates a mixed ion beam, the mass analysis system selects the target ion, the acceleration system gives the ion injection kinetic energy, the beam transmission and correction system optimizes the beam state, and finally the scanning and target chamber system uniformly injects the ion beam into the silicon wafer. The substrate after ion implantation is placed in a high-temperature furnace for heating to repair the lattice damage caused by ion implantation and promote the diffusion of implanted ions in the substrate to form a uniform doped layer. When different sizes of silicon wafers need to be adsorbed, the number of adsorption holes 6 on the adsorption disc 4 is adjusted by adjusting the structure, so that the adsorption holes 6 can adapt to different sizes of silicon wafers, prevent displacement when adsorbing small size silicon wafers during ion implantation, and cause the edge of the silicon wafer to be raised, thereby affecting the effect of the ion. Then the motor 7 drives the rotating shaft and the rotating disc 1, the mounting block 2 rotates, so that the silicon wafer on the rotating disc 1 can be implanted into the ion beam one by one, thereby improving the efficiency of implanting the ion beam into the silicon wafer.

[0026] As shown in Figures 1 to 3 The mounting block 2 is fixedly connected to the bottom of the rotating disc 1, and the bottom of the mounting block 2 is rotatably connected to the top of the mounting seat. The fixed blocks 3 and the adsorption structure are distributed in a circular array around the center of the rotating disc 1. The adsorption holes 6 located in the middle of the adsorption disc 4 have a larger diameter than the adsorption holes 6 located at the edge of the adsorption disc 4. The density of the adsorption holes 6 located in the middle of the adsorption disc 4 is smaller than the density of the adsorption holes 6 located at the edge of the adsorption disc 4.

[0027] The motor 7 and the rotating shaft are protected by the mounting block 2, and the mounting block 2 is rotatably connected with the mounting seat. The multiple silicon wafers can be simultaneously adsorbed by the circular array distributed fixing blocks 3 and the adsorption structure. Under the action of the motor 7 and the rotating shaft, the mounting block 2 drives the rotating disc 1 to rotate along the top of the mounting seat, so that the multiple silicon wafers can be injected into the light beam one by one. Since the diameter of the adsorption holes 6 in the middle of the adsorption disc 4 is larger than that of the adsorption holes 6 at the edge of the adsorption disc 4, and the density of the adsorption holes 6 in the middle of the adsorption disc 4 is smaller than that of the adsorption holes 6 at the edge of the adsorption disc 4, the uniformity of the silicon wafer adsorption can be improved, the edge of the silicon wafer is prevented from being warped due to insufficient adsorption force, and the use is affected.

[0028] As shown in Figures 4 to 5 The adjusting structure includes a moving disc 8, a first stopper 9, a second stopper 10, a first electric push rod 11, a second electric push rod 12, a connecting block 14 and a third electric push rod 13. The moving disc 8 is located at the bottom of the adsorption disc 4. The first electric push rod 11 and the second electric push rod 12 are fixedly connected inside the moving disc 8. The first electric push rod 11 and the second electric push rod 12 are respectively fixedly connected with the first stopper 9 and the second stopper 10 at the top. The connecting block 14 is fixedly connected with the third electric push rod 13. The first stopper 9 and the second stopper 10 are located at the top of the moving disc 8 and are in close contact with the bottom of the adsorption disc 4. The first stopper 9 and the second stopper 10 are arranged in correspondence with the adsorption holes 6 at the edge of the adsorption disc 4. A through hole is formed in the middle of the moving disc 8 and is arranged in correspondence with the adsorption holes 6 in the middle of the adsorption disc 4. The diameter of the adsorption holes 6 is smaller than that of the adsorption holes 6 in the middle of the adsorption disc 4.

[0029] When the adsorption disc 4 is placed with small size silicon wafers, the first electric push rod 11 is started to drive the first stopper 9 to move to the bottom of the adsorption disc 4, to block the adsorption holes 6 at the edge of the adsorption disc 4, and the second electric push rod 12 is started to drive the second stopper 10 to move down into the moving disc 8, away from the adsorption holes 6 between the two third stoppers 18, and the through hole in the middle of the moving disc 8 is arranged in correspondence with the adsorption holes 6 in the middle of the adsorption disc 4, so that the diameter of the through hole is changed. In the initial state, the first stopper 9 and the second stopper 10 are located in the moving disc. When smaller size silicon wafers need to be adsorbed, the corresponding silicon wafers are placed on the adsorption disc 4. The first electric push rod 11 is started to drive the first stopper 9 to move to the bottom of the adsorption disc 4, so that the adsorption holes 6 at the edge of the adsorption disc 4 are blocked, or the second electric push rod 12 is started to drive the second stopper 10 to move to the bottom of the adsorption disc 4, so that the adsorption holes 6 between the two third stoppers 18 on the adsorption disc 4 are blocked, and then the corresponding silicon wafers are placed, so that the silicon wafers can be adjusted according to different sizes and adsorbed in time, without frequent replacement of the moving disc 8, and the effect of the silicon wafer adsorption is further improved.

[0030] AsFigures 3 to 5 As shown, the outer wall of the adsorption disc 4 is in sliding connection with the inner wall of the vacuum cavity 5, the bottom of the fixed block 3 and the top of the mounting block 2 are provided with grooves, the bottom of the third electric push rod 13 is fixedly connected with the groove in the inside of the mounting block 2, and the top of the third electric push rod 13 extends through the mounting block 2 into the groove in the bottom of the fixed block 3, the connecting block 14 extends through the vacuum cavity 5 into the groove in the bottom of the fixed block 3, the connecting block 14 is in sliding connection with the inner wall of the groove in the bottom of the fixed block 3, and the connecting block 14 and the third electric push rod 13 are in circular array distribution with the center of the moving disc 8.

[0031] The third electric push rod 13 is conveniently installed through the groove, when the third electric push rod 13 drives the connecting block 14 to move downward along the inner wall of the groove, the moving disc 8 moves downward along the inner wall of the vacuum cavity 5, through the circular array distribution of the connecting block 14 and the third electric push rod 13, the stability of the moving disc 8 is improved when moving, after the third electric push rod 13 is retracted to drive the connecting block 14 and the moving disc 8 to move to the bottom of the vacuum cavity 5, the adsorption structure can conveniently extract the air in the vacuum cavity 5, and the silicon wafer is adsorbed on the adsorption disc 4 through the adsorption hole 6, thereby facilitating the injection of ion beam into the silicon wafer.

[0032] As shown in the figure, Figures 6 to 7 The top of the adsorption disc 4 is provided with two annular grooves, the two annular grooves are respectively located between the adsorption holes 6 at the edges of the adsorption disc 4, between the adsorption holes 6 at the edges of the adsorption disc 4 and the adsorption holes 6 at the middle of the adsorption disc 4, and the electric telescopic rods 17 are fixedly connected in the two annular grooves, and the third stop blocks 18 are fixedly connected at the top of the electric telescopic rods 17.

[0033] When the small-size silicon wafer is placed on the adsorption disc 4, the adsorption holes 6 at the edges of the adsorption disc 4 are shielded by the first stop block 9 or the second stop block 10, the electric telescopic rod 17 is started to drive the third stop block 18 to move upward to the top of the adsorption disc 4, so that the third stop block 18 can limit the silicon wafer, and the silicon wafer can be adsorbed by the adsorption structure through the adsorption hole 6 at the same time, and the silicon wafer can also be prevented from moving by the action of the third stop block 18, further preventing the silicon wafer from being warped and affecting the subsequent photoetching precision.

[0034] As shown in the figure, Figure 6 The top of the fixed block 3 and the two sides of the adsorption disc 4 are provided with two mounting openings, the limiting blocks 19 are in sliding connection in the two mounting openings, the limiting blocks 19 are fixedly connected with the limiting rods 20, the side of the adsorption disc 4 close to the mounting opening is provided with a limiting groove, the limiting rod 20 is inserted into the limiting groove, the side of the limiting block 19 close to the limiting rod 20 is provided with a mounting groove, and the mounting groove is fixedly connected with the inner wall of the mounting opening through the first spring 21.

[0035] The limiting block 19 is installed through the installation port, the first spring 21 is installed through the installation slot, the first spring 21 connects the limiting block 19 and the installation port, when the adsorption disc 4 needs to be replaced, the limiting block 19 is moved away from the two sides of the fixing block 3, the first spring 21 is stretched, the limiting block 19 drives the limiting rod 20 to move away from the adsorption disc 4, the adsorption disc 4 is no longer limited, and then the adsorption disc 4 is taken off the fixing block 3 for replacement, when the adsorption disc 4 is installed, the limiting block 19 is moved towards the adsorption disc 4, the limiting block 19 is moved into the installation port through the action of the first spring 21, and the limiting rod 20 is inserted into the limiting slot and is matched with the replaced adsorption disc 4 to fix the adsorption disc 4, and the stability of the adsorption disc 4 is improved.

[0036] As shown in Figures 5 to 9 The two ends of the moving disc 8 are fixedly connected with the fixing rings 22, the fixing rings 22 are fixedly connected with the inner wall of the vacuum cavity 5, the connecting block 14 is located between two adjacent fixing rings 22, and the adsorption disc 4 is located on the top of the fixing ring 22 at the top end of the moving disc 8.

[0037] When the adsorption pump 15 is started to collect the air in the vacuum cavity 5 through the adsorption pipe 16, the silicon wafer is adsorbed onto the adsorption disc 4 through the adsorption hole 6, the adsorption disc 4 is subjected to a downward adsorption force, the fixing ring 22 can provide an upward constraint force, thereby offsetting the downward pulling force of adsorption, improving the stability of the adsorption disc 4, and facilitating the use of the adsorption of the silicon wafer.

[0038] Working principle of the present application: Referring to Figures 1 to 9As shown, the silicon wafer is first cleaned and surface-treated. Through photolithography steps such as coating, exposure, and development, a mask pattern is formed on the substrate surface to define the ion implantation area. The silicon wafer is then placed on the adsorption disk 4. The third electric push rod 13 is activated, causing the connecting block 14 to move downwards along the inner wall of the groove, and moving the moving disk 8 to the bottom of the vacuum chamber 5, exposing the bottom of the vacuum chamber 5. The control valve is then opened, allowing the adsorption pump 15 to extract air from the vacuum chamber 5 through the adsorption tube 16. The silicon wafer is then adsorbed onto the adsorption disk 4 through the adsorption holes 6. Activating the vacuum system will first start the molecular pump and diffusion pump, which then activate the ion source cavity, mass analyzer channel, accelerating tube, and beam. Vacuuming is performed on all areas through which ions flow and react, including the transmission pipeline and target chamber. Then, the ion source system is activated, generating a mixed ion beam. The target ions are screened using a quality analysis system, and the acceleration system provides kinetic energy for ion implantation. The beam transmission and correction system optimizes the beam state, and finally, the scanning and target chamber system ensures that the ion beam is uniformly implanted into the silicon wafer. The implanted substrate is then placed in a high-temperature furnace for heating to repair lattice damage caused by ion implantation and promote the diffusion of implanted ions within the substrate to form a uniform doped layer. After implantation, the rotating shaft is driven by motor 7 to rotate the turntable 1 and mounting block 2, allowing the silicon wafers on the turntable 1 to be implanted with ion beams one by one.

[0039] When small silicon wafers need to be adsorbed, first activate the second electric telescopic rod 17 to move the second stop 10 downwards, exposing the adsorption hole 6 between the two third stops 18. Then, align the through hole in the middle of the moving disk 8 with the adsorption hole 6 in the middle of the adsorption disk 4. Since the through hole is smaller than the adsorption hole 6 in the middle of the adsorption disk 4, the diameter of the adsorption hole 6 is reduced by the through hole. Place the appropriate silicon wafer on the adjusted adsorption disk 4. Then, activate the electric telescopic rod 17 closest to the outermost edge of the adsorption disk 4 to move the third stop 18 upwards, so that the third stop 18 moves to the outside of the silicon wafer, thus confining the silicon wafer. When it is necessary to adsorb smaller silicon wafers, the second electric push rod 12 drives the second stop 10 to move to the bottom of the adsorption disk 4 and fits against the bottom of the adsorption disk 4, blocking the adsorption holes 6 at the edge of the adsorption disk 4. This causes the electric telescopic rod 17 at the outermost edge of the adsorption disk 4 to drive the third stop 18 to move to its original position. Then, a matching silicon wafer is placed on the adjusted adsorption disk 4. By activating the electric telescopic rod 17 near the adsorption hole 6 in the middle of the adsorption disk 4, the third stop 18 is moved to the top of the adsorption disk 4, further limiting the smaller silicon wafer. Then, the adsorption structure adsorbs the smaller silicon wafer.

[0040] When the adsorption plate 4 needs to be replaced, the limiting blocks 19 are moved away from the fixing block 3 on both sides, so that the first spring 21 is stretched. The limiting blocks 19 drive the limiting rod 20 away from the adsorption plate 4, so that the adsorption plate 4 is no longer limited, and then the adsorption plate 4 can be removed from the fixing block 3 for replacement. After the adsorption plate 4 is installed, the limiting blocks 19 are moved towards the adsorption plate 4. Through the action of the first spring 21, the limiting blocks 19 are moved into the installation opening, and the limiting rod 20 is inserted into the limiting groove to fix the replaced adsorption plate 4, so that the adsorption plate 4 can continue to be used.

[0041] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it.

Claims

1. An ion implantation diffusion process for semiconductor device fabrication, characterized in that, Includes the following steps: Step 1: First, clean and photolithographically pattern the semiconductor substrate to define the doping region; Step 2: Then, use an ion implanter to accelerate the implantation of specific impurity ions into the target area to form a non-equilibrium doped layer; Step 3: Restarting the vacuum system will first activate the molecular pump and diffusion pump equipment to evacuate all areas through which ions flow and react, including the ion source cavity, mass analyzer channel, accelerating tube, beam transmission pipeline, and target chamber. Then, the ion source system will start working, generating a mixed ion beam. The mass analysis system will be used to screen out the target ions, the accelerating system will provide kinetic energy for ion implantation, the beam transmission and correction system will optimize the beam state, and finally, the scanning and target chamber system will ensure that the ion beam is uniformly injected into the silicon wafer. Step 4: Place the implanted substrate in a high-temperature furnace for heating to repair the lattice damage caused by ion implantation, and at the same time promote the diffusion of implanted ions in the substrate to form a uniform doped layer.

2. An ion implantation diffusion process for semiconductor device fabrication, characterized in that, The ion implanter includes: A turntable (1) is set inside the ion implanter. A drive structure is provided at the bottom of the turntable (1), and a mounting base is provided at the bottom of the drive structure for driving the turntable (1) to rotate. Mounting block (2) is disposed on the outside of the drive structure to protect the drive structure; The mounting components are set on the turntable (1) and the mounting block (2) for adsorbing silicon wafers. The mounting components include: a fixing block (3), an adsorption plate (4), a vacuum chamber (5), an adsorption structure and an adjustment structure. Multiple fixing blocks (3) are fixedly installed on the top of the turntable (1). A vacuum chamber (5) is opened in the middle of the fixing block (3). An adsorption plate (4) is set at the top inside the vacuum chamber (5). An adsorption hole (6) is opened on the adsorption plate (4) for placing silicon wafers. An adsorption structure is set inside the mounting block (2). An adjustment structure is set inside the fixing block (3) and at the bottom of the adsorption plate (4) for adjusting the adsorption effect of the adsorption plate (4).

3. The ion implantation diffusion process for semiconductor device fabrication according to claim 1, characterized in that: The mounting block (2) is fixedly connected to the bottom of the turntable (1), and the bottom of the mounting block (2) is rotatably connected to the top of the mounting base. The fixing block (3) and the adsorption structure are arranged in a circular array around the center of the turntable (1). The diameter of the adsorption hole (6) in the middle of the adsorption disk (4) is larger than that of the adsorption hole (6) at the edge of the adsorption disk (4). The density of the adsorption hole (6) in the middle of the adsorption disk (4) is smaller than that of the adsorption hole (6) at the edge of the adsorption disk (4).

4. The ion implantation diffusion process for semiconductor device fabrication according to claim 2, characterized in that: The adjustment structure includes a movable disk (8), a first stop (9), a second stop (10), a first electric push rod (11), a second electric push rod (12), a connecting block (14), and a third electric push rod (13). The movable disk (8) is located at the bottom of the adsorption disk (4). The first electric push rod (11) is fixedly connected inside the movable disk (8). The first stop (9) and the second stop (10) are fixedly connected to the top of the first electric push rod (11) and the second electric push rod (12), respectively. The connecting block (14) is fixedly connected to the outer wall of the movable disk (8). The third electric push rod (13) is fixedly connected to the connecting block (14).

5. The ion implantation diffusion process for semiconductor device fabrication according to claim 3, characterized in that: The first stop (9) and the second stop (10) are both located on the top of the moving disk (8), and the first stop (9) and the second stop (10) are attached to the bottom of the adsorption disk (4). The first stop (9) and the second stop (10) are correspondingly set with the adsorption holes (6) on the edge of the adsorption disk (4). A through hole is opened in the middle of the moving disk (8), and the through hole is correspondingly set with the adsorption hole (6) in the middle of the adsorption disk (4). The diameter of the adsorption hole (6) is smaller than the diameter of the adsorption hole (6) in the middle of the adsorption disk (4).

6. The ion implantation diffusion process for semiconductor device fabrication according to claim 4, characterized in that: The outer wall of the adsorption disk (4) is slidably connected to the inner wall of the vacuum chamber (5). The bottom of the fixing block (3) and the top of the mounting block (2) are provided with grooves. The bottom of the third electric push rod (13) is fixedly connected to the groove inside the mounting block (2). The top of the third electric push rod (13) extends through the mounting block (2) to the groove at the bottom of the fixing block (3). The connecting block (14) extends through the vacuum chamber (5) to the groove at the bottom of the fixing block (3). The connecting block (14) is slidably connected to the inner wall of the groove at the bottom of the fixing block (3). The connecting block (14) and the third electric push rod (13) are arranged in a circular array around the center of the moving disk (8).

7. The ion implantation diffusion process for semiconductor device fabrication according to claim 5, characterized in that: The adsorption structure includes an adsorption pump (15), an adsorption tube (16), and a control valve. The adsorption pump (15) is fixedly connected inside the mounting block (2). The top of the adsorption pump (15) is fixedly connected to the adsorption tube (16). The top of the adsorption tube (16) is fixedly connected to the control valve. The top of the adsorption tube (16) is fixedly connected to the bottom of the mounting block (2). The adsorption tube (16) is connected to the vacuum chamber (5). The adsorption pump (15), the adsorption tube (16), and the control valve are all located in the middle of the third electric push rod (13).

8. The ion implantation diffusion process for semiconductor device fabrication according to claim 6, characterized in that: The top of the adsorption plate (4) has two annular grooves. The two annular grooves are located between the adsorption holes (6) on the edge of the adsorption plate (4) and between the adsorption holes (6) on the edge of the adsorption plate (4) and the adsorption holes (6) in the middle of the adsorption plate (4). An electric telescopic rod (17) is fixedly connected in both annular grooves. A third stop (18) is fixedly connected to the top of the electric telescopic rod (17).

9. The ion implantation diffusion process for semiconductor device fabrication according to claim 7, characterized in that: The top of the fixing block (3) and both sides of the adsorption plate (4) have two installation ports. A limiting block (19) is slidably connected in each of the two installation ports. A limiting rod (20) is fixedly connected to the limiting block (19). The limiting rod (20) is inserted into the adsorption plate (4). An installation groove is provided on the side of the limiting block (19) near the limiting rod (20). The installation groove is fixedly connected to the inner wall of the installation port by a first spring (21).

10. The ion implantation diffusion process for semiconductor device fabrication according to claim 8, characterized in that: The upper and lower ends of the outer side of the movable disk (8) are fixedly connected with fixing rings (22). The fixing rings (22) are fixedly connected to the inner wall of the vacuum chamber (5). The connecting block (14) is located between two adjacent fixing rings (22). The adsorption disk (4) is located at the top of the fixing ring (22) at the top of the movable disk (8).

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