Semiconductor device and method for manufacturing semiconductor device
By using bottom fillers with different glass transition temperatures in semiconductor devices, the thermal and physical stresses of metal bumps are mitigated, the problem of metal bump cracking is solved, and the durability and reliability of the device are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-25
- Publication Date
- 2026-03-24
AI Technical Summary
In existing semiconductor devices, metal bumps are prone to cracking due to thermal and physical stress, leading to device failure.
Bottom fillers with different glass transition temperatures are used to mitigate the thermal and physical stresses on the metal bumps. By arranging bottom fillers with high and low glass transition temperatures around the metal bumps, thermal and physical stresses are mitigated respectively.
It effectively suppresses cracks in metal bumps, improving the durability and reliability of semiconductor devices.
Smart Images
Figure CN121729098A_ABST
Abstract
Description
Technical Field
[0001] Embodiments of the present invention relate to a semiconductor device and a method for manufacturing a semiconductor device. Background Technology
[0002] Semiconductor devices already exist where packages containing molded semiconductor chips are mounted on a substrate via metal bumps. Sometimes, cracks can form on the metal bumps due to physical or thermal stresses applied to the semiconductor device. Summary of the Invention
[0003] One embodiment aims to provide a semiconductor device capable of suppressing cracks in metal bumps and a method for manufacturing the semiconductor device.
[0004] The semiconductor device of the embodiment includes: a mounting substrate; a package substrate disposed opposite to the main surface of the mounting substrate on a first direction side intersecting with the main surface of the mounting substrate; a metal bump disposed between the main surface of the mounting substrate and the package substrate; a first bottom filler disposed on a second direction side along the main surface as viewed from the metal bump; and a second bottom filler disposed between the metal bump and the first bottom filler, wherein the first bottom filler and the second bottom filler have different glass transition temperatures. Attached Figure Description
[0005] Figures 1A-1B This is a cross-sectional view schematically showing an example of the configuration of a semiconductor device according to an embodiment. Figures 2A-2B This is a conceptual diagram illustrating the expansion and contraction of the mounting substrate and semiconductor package. Figures 3A-3B This is a conceptual diagram illustrating the expansion and contraction of the mounting substrate and semiconductor package. Figure 4 This is a diagram illustrating an example of the glass transition temperature of the bottom filler involved in the embodiment. Figures 5A to 5D This is a cross-sectional view illustrating a portion of the steps in the manufacturing method of the semiconductor device according to the embodiments. Figure 6 This is a schematic cross-sectional view showing an example of the configuration of the semiconductor device involved in Modification 1. Figures 7A to 7C This is a cross-sectional view illustrating a portion of the steps in the manufacturing method of the semiconductor device involved in Modified Example 1. Figures 8A-8B This is a diagram schematically illustrating the configuration example of the semiconductor device involved in Modification 2. Figure 9 This is a schematic cross-sectional view showing an example of the configuration of the semiconductor device involved in Modified Example 3. Figure 10 This is a schematic cross-sectional view showing an example of the configuration of the semiconductor device involved in Modification Example 4. Detailed Implementation
[0006] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below. Furthermore, the constituent elements in the following embodiments include elements readily conceived by those skilled in the art or substantially the same elements.
[0007] (Implementation Method) Below, refer to Figures 1A to 5D The implementation method is described in detail.
[0008] (Example of a semiconductor device configuration) Figure 1A and Figure 1B This is a cross-sectional view schematically illustrating an example of the configuration of the semiconductor device 1 according to the embodiment. More specifically, Figure 1A This is the XZ cross-sectional view of semiconductor device 1. Figure 1B yes Figure 1A Enlarged cross-sectional view at the height of the metal bump 30.
[0009] In this specification, the semiconductor package 20 side of the semiconductor device 1 is designated as the upper part, and the mounting substrate 10 side is designated as the lower part. The vertical direction of the semiconductor device 1 is referred to as the Z direction. Furthermore, the directions intersecting the Z direction are designated as the X direction and the Y direction. The X and Y directions are directions oriented along the surface of the mounting substrate 10, and the X and Y directions are orthogonal to each other. The X direction is an example of the second direction. Additionally, the direction in which the arrow points on each axis is designated as the positive direction, and the opposite direction is designated as the negative direction. The positive Z direction is an example of the first direction.
[0010] like Figure 1A As shown, the semiconductor device 1 includes a mounting substrate 10, a semiconductor package 20, and metal bumps 30.
[0011] The mounting substrate 10 is a multilayer substrate formed by alternating layers of insulating layer 11 and conductive layer 12. An electrode 13 is disposed on the upper surface 10a, which is the first surface of the mounting substrate 10. The electrode 13 is an example of a first connection portion.
[0012] The insulating layer 11 is made of, for example, carbon fiber, glass fiber, or aromatic polyamide fiber impregnated with a thermosetting resin such as epoxy resin before curing. The conductive layer 12 and the electrode 13 are made of, for example, a metal such as Cu. The conductive layer 12 has a wiring pattern and is connected to the electrode 13. Electrodes (not shown) disposed on the lower surface of the mounting substrate 10 are electrically connected to an external power source such as a host computer.
[0013] A semiconductor package 20 is disposed above the mounting substrate 10, opposite to the upper surface 10a of the mounting substrate 10. The semiconductor package 20 includes a resin substrate 21, a semiconductor chip 22, an electrode 23, and a molding resin 24. The semiconductor package 20 is an example of a package substrate.
[0014] The resin substrate 21 includes a conductive layer 211 and an insulating layer 212. The lower surface 21a, which is the second surface of the resin substrate 21, faces the upper surface 10a of the mounting substrate 10. An electrode 23 is disposed on the lower surface 21a of the resin substrate 21. The lower surface 21a is an example of the second surface, and the electrode 23 is an example of a second connection portion.
[0015] The insulating layer 212 is made of, for example, carbon fiber, glass fiber, or aromatic polyamide fiber impregnated with a thermosetting resin such as epoxy resin before curing. The conductive layer 211 and the electrode 23 are made of, for example, a metal such as Cu. The conductive layer 211 has a wiring pattern and is connected to the electrode 23.
[0016] A semiconductor chip 22 is disposed on top of a resin substrate 21. The semiconductor chip 22 is a small wafer obtained by monolithically processing a silicon substrate or similar material, and contains a semiconductor element (not shown). This semiconductor element may be, for example, a NAND flash memory. The semiconductor chip 22 is connected to the conductive layer 211 of the resin substrate 21 via leads (not shown). Thus, the semiconductor chip 22 is electrically connected to electrodes 23.
[0017] Semiconductor chip 22 and leads (not shown) are sealed on resin substrate 21 by molding resin 24.
[0018] Furthermore, although this embodiment describes the semiconductor package 20 having one semiconductor chip 22, it is not limited to this. The semiconductor package 20 may also have multiple semiconductor chips.
[0019] Multiple metal bumps 30 are disposed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. The metal bumps 30 are, for example, formed in a spherical shape. The upper end of the metal bump 30 is connected to an electrode 13 disposed on the upper surface 10a of the mounting substrate 10, and the lower end is connected to an electrode 23 disposed on the lower surface 21a of the resin substrate 21. Thus, the mounting substrate 10 is electrically connected to the semiconductor package 20.
[0020] Bottom fillers 100 and 200 are disposed between multiple metal bumps 30. Each of the bottom fillers 100 and 200 contains a thermosetting epoxy resin, etc. Bottom filler 100 is an example of a first bottom filler, and bottom filler 200 is an example of a second bottom filler.
[0021] Specifically, multiple metal bumps 30 are arranged, for example, along the X direction. Therefore, as... Figure 1BAs shown, the side surfaces 30a of adjacent metal bumps 30 are opposite each other in the X direction. The side surface 30a of the metal bump 30 is the portion of the surface of the metal bump 30 exposed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. The side surface 30a is an example of a third surface.
[0022] The bottom filler 200 covers the side surface 30a of the metal protrusion 30. Hereafter, the portion of the bottom filler 200 covering the side surface 30a of the metal protrusion 30 is sometimes referred to as the first portion 210. The thickness of the first portion 210 is less than half the distance Dx between the opposing side surfaces 30a in the X direction. Thus, a space is formed between the opposing first portions 210 in the X direction.
[0023] In addition, the bottom filler 200 covers the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, respectively. Hereinafter, the portion of the bottom filler 200 covering the lower surface 21a of the resin substrate 21 is sometimes referred to as the second part 220, and the portion covering the upper surface 10a of the mounting substrate 10 is referred to as the third part 230.
[0024] The second part 220 and the third part 230 are opposite each other in the Z direction. The combined thickness of the second part 220 and the third part 230 is less than the distance Dy between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. As a result, a space is formed between the opposing second part 220 and the third part 230.
[0025] Furthermore, the second part 220 is connected to the upper end of the first part 210, and the third part 230 is connected to the lower end of the first part 210. That is, the bottom filler 200 continuously covers the side surface 30a of the metal bump 30, the upper surface 10a of the mounting substrate 10, and the lower surface 21a of the resin substrate 21.
[0026] In the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, the portion where the first part 210, the second part 220, and the third part 230 are not disposed is filled with bottom filler 100. That is, when viewed from the center point O of the metal bump 30 along the X direction ( Figure 1B (The dotted line indicates that the metal bump 30, the first part 210, and the bottom packing 100 are arranged sequentially. In other words, the bottom packing 200 (the first part 210) is arranged between the metal bump 30 and the bottom packing 100.
[0027] Furthermore, although it has been described herein that the bottom filler 200 continuously covers the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the lower surface 21a of the resin substrate 21, this is not a limitation. For example, the bottom filler 200 may only need to cover at least a portion of each of the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the lower surface 21a of the resin substrate 21. Additionally, the bottom filler 100 may only need to be disposed at least in at least a portion of the portions where the first portion 210, the second portion 220, and the third portion 230 are not disposed, or it may not be necessary to fill them at all.
[0028] In addition, in order to extend the lifespan of semiconductor device 1, semiconductor device 1 is required to have high resistance to physical stress, such as that applied during a drop, or thermal stress applied when placed in high or low temperature environments. In order to evaluate the resistance to physical stress and thermal stress, drop tests and TCT tests (Temperature Cycling Test) are performed on semiconductor device 1 before it leaves the factory.
[0029] The semiconductor chip 22 contained in the semiconductor package 20 has a relatively low coefficient of thermal expansion. On the other hand, the mounting substrate 10 is mostly made of resin with a relatively high coefficient of thermal expansion. Therefore, the coefficient of thermal expansion of the mounting substrate 10 is greater than that of the semiconductor package 20. If the coefficients of thermal expansion of the mounting substrate 10 and the semiconductor package 20 are different, stress will be applied to the metal bump 30 connecting the two due to the difference in elongation and contraction between the two.
[0030] Figures 2A-2B and Figures 3A-3B This is a conceptual diagram illustrating the extension and retraction of the mounting substrate 10 and the semiconductor package 20. More specifically... Figure 2A and Figure 2B This illustrates the elongation of the mounting substrate 10 and the semiconductor package 20 when placed in a high-temperature environment. Figure 3A and Figure 3B This illustrates the shrinkage of the mounting substrate 10 and the semiconductor package 20 when placed in a low-temperature environment. The high-temperature environment is, for example, 125°C, and the low-temperature environment is, for example, -40°C.
[0031] For example, when semiconductor device 1 is placed in a high-temperature environment, such as Figure 2A As indicated by the arrows and dashed lines, the mounting substrate 10 and the semiconductor package 20 will expand. The mounting substrate 10 and the semiconductor package 20 may also warp vertically due to expansion. Due to the difference in their coefficients of thermal expansion, the mounting substrate 10 expands to a greater extent than the semiconductor package 20. Therefore, as... Figure 2BAs shown, the lower end of the metal bump 30 is subjected to a greater stress toward the outside of the semiconductor device 1. As a result, the lower end of the metal bump 30 may tilt outward.
[0032] On the other hand, when the semiconductor device 1 is placed in a low-temperature environment, such as Figure 3A As indicated by the arrows and dashed lines, the mounting substrate 10 and the semiconductor package 20 will shrink. The mounting substrate 10 and the semiconductor package 20 may also warp vertically due to shrinkage. Due to the difference in their coefficients of thermal expansion, the shrinkage of the mounting substrate 10 is greater than that of the semiconductor package 20. Therefore, as... Figure 3B As shown, a greater stress is applied to the lower end of the metal bump 30 toward the inside of the semiconductor device 1. As a result, the lower end of the metal bump 30 may tilt inward.
[0033] When the metal bump 30 is subjected to the aforementioned thermal stress, the metal bump 30 may fracture at the interface between it and the electrodes 13 and 23, or the metal bump 30 may peel off from the electrodes 13 and 23. Similarly, when the metal bump 30 is subjected to physical stress, it may also fracture at the interface between it and the electrodes 13 and 23, or the metal bump 30 may peel off from the electrodes 13 and 23. As a result, the semiconductor device 1 may sometimes malfunction. Furthermore, the fracture or peeling of the metal bump 30 is sometimes referred to as a "crack".
[0034] Furthermore, among the plurality of metal bumps 30 disposed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, the metal bumps 30 disposed on the outer periphery are subject to greater thermal stress as described above. That is, the metal bumps 30 disposed on the outer periphery are more likely to develop cracks.
[0035] In order to suppress cracking of the metal bumps 30 as described above, the bottom fillers 100 and 200 of this embodiment have different glass transition temperatures.
[0036] Figure 4 This is a diagram illustrating an example of the glass transition temperature of the bottom fillers 100 and 200 involved in the embodiment.
[0037] like Figure 4 As shown, the glass transition temperature of the bottom packing 100 is, for example, 7°C, and the glass transition temperature of the bottom packing 200 is, for example, 120°C. That is, the bottom packing 200 has a higher glass transition temperature than the bottom packing 100.
[0038] When the semiconductor device 1 is placed in an environment, for example, below 120°C, the bottom filler 200 is glassy, relatively hard, and has a low coefficient of thermal expansion. This bottom filler 200 covers the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the lower surface 21a of the resin substrate 21, thereby mitigating the thermal stress exerted on the metal bump 30 when the mounting substrate 10 and the semiconductor package 20 expand or contract. Consequently, cracking of the metal bump 30 is suppressed.
[0039] Furthermore, when the semiconductor device 1 is placed in an environment, for example, above 7°C, the bottom filler 100 is rubbery and relatively soft. This bottom filler 100 fills the portion of the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where the bottom filler 200 is not located, thereby mitigating the physical stress applied to the metal bumps 30 when the semiconductor device 1 is dropped. As a result, cracking of the metal bumps 30 is suppressed.
[0040] Furthermore, although each of these features is used in this embodiment Figure 4 The illustrated bottom filler for glass transition temperature is not limited to the bottom filler applicable to this invention. Figure 4 For example, the bottom filler can be selected based on the temperature of the environment in which the semiconductor device 1 is placed. When selecting the bottom filler, for example, a material having a glass transition temperature lower than the temperature of the environment in which the semiconductor device 1 is placed can be selected as bottom filler 100, and a material having a glass transition temperature higher than that temperature can be selected as bottom filler 200. Furthermore, it is preferable that both bottom fillers 100 and 200 have low coefficients of thermal expansion.
[0041] (Semiconductor device manufacturing method) Next, use Figures 5A to 5D The manufacturing method of the semiconductor device 1 according to Embodiment 1 will be described.
[0042] Figures 5A to 5D This is a cross-sectional view illustrating a portion of the steps in the manufacturing method of the semiconductor device 1 according to the embodiment. Additionally, in Figures 5A to 5D The diagram omits the configuration above the electrode 23 of the semiconductor package 20 and the configuration below the electrode 13 of the mounting substrate 10.
[0043] In the method for manufacturing a semiconductor device according to the embodiments, in Figure 5A The semiconductor package 20 is pre-formed before the processing.
[0044] like Figure 5AAs shown, after forming the semiconductor package 20, in order to mount the semiconductor package 20 onto the mounting substrate 10, a plurality of metal bumps 30 capable of connecting to the electrodes 23 are formed on the lower surface 21a of the resin substrate 21. The metal bumps 30 are formed, for example, using thermoforming, ultrasonic bonding, or batch reflow technology that melts a plurality of solders arranged in an array and forms a plurality of solder balls at once. Next, the semiconductor package 20 with the metal bumps 30 formed is picked up by a pick-up device or the like with the semiconductor package 20 side facing upwards, so that it is facing the upper surface 10a of the mounting substrate 10.
[0045] Next, as Figure 5B As shown, the semiconductor package 20 is mounted on the mounting substrate 10 via metal bumps 30. Specifically, the electrodes 13 of the mounting substrate 10 and the metal bumps 30 are overlapped and heated to 100°C or higher using an oven or similar device. This causes the electrodes 13 to bond with the metal bumps 30, and the mounting substrate 10 to be electrically connected to the semiconductor package 20.
[0046] Next, as Figure 5C As shown, a bottom filler 200 is formed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. Specifically, a paste-like liquid, serving as the bottom filler 200 before curing, is applied to the upper surface 10a of the mounting substrate 10, the side surfaces 30a of the metal bumps 30, and the lower surface 21a of the resin substrate 21 using at least one of methods such as coating, adhesion, and spraying. During the application of the liquid, its thickness is adjusted to create spaces between adjacent metal bumps 30 and between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. This is for filling these spaces with the bottom filler 100 later. After the liquid is applied, the substrate is heated to 100°C or higher using an oven or similar means. This forms the bottom filler 200.
[0047] Next, as Figure 5D As shown, the bottom filler 100 is formed in the portion of the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where the bottom filler 200 is not formed. Specifically, a paste-like liquid, serving as the bottom filler 100 before curing, is injected into the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, for example, using a dispensing nozzle. The liquid spreads along the portion between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where the bottom filler 200 is not formed. Then, it is heated to 100°C or higher using an oven or the like. This forms the bottom filler 100.
[0048] Next, the mounting substrate 10 is monolithically assembled (illustration omitted). This completes the manufacturing of the semiconductor device 1 according to the embodiment.
[0049] (Summary) The semiconductor device 1 of this embodiment includes a mounting substrate 10, a resin substrate 21 disposed opposite to the upper surface 10a of the mounting substrate 10, and a metal bump 30 disposed between the upper surface 10a of the mounting substrate 10 and the resin substrate 21. Viewed from the metal bump 30, a bottom filler 100 is provided on the X-direction side, and a bottom filler 200 is disposed between the metal bump 30 and the bottom filler 100. The bottom filler 100 and the bottom filler 200 have different glass transition temperatures.
[0050] Bottom fillers with high glass transition temperatures are harder and have a lower coefficient of thermal expansion. By placing such bottom fillers around the metal bumps 30, thermal stress applied to the metal bumps 30 can be mitigated. On the other hand, bottom fillers with low glass transition temperatures are softer. By placing such bottom fillers around the metal bumps 30, physical stress applied to the metal bumps 30 due to impacts such as drops can be mitigated. By placing two types of bottom fillers with different glass transition temperatures around the metal bumps 30, thermal stress and physical stress can be mitigated respectively, thus suppressing cracking of the metal bumps 30.
[0051] (Variation Example 1) The following is for reference Figures 6-7C The semiconductor device 2 of Modified Example 1 will be described.
[0052] The semiconductor device 2 involved in Modification 1 differs from the embodiment described above in the location where the bottom filler 200 is provided. Furthermore, hereinafter, the same reference numerals will be used to denote components identical to those in the embodiment described above, and their descriptions will sometimes be omitted.
[0053] Figure 6 This is a cross-sectional view schematically showing an example of the configuration of the semiconductor device 2 involved in Modification 1.
[0054] like Figure 6 As shown, in the semiconductor device 2 of Modified Example 1, the upper surface 10a of the mounting substrate 10 is not covered by the bottom filler 200. That is, the bottom filler 200 covers the lower surface 21a of the resin substrate 21 and the side surface 30a of the metal bump 30.
[0055] Figures 7A to 7C This is a cross-sectional view illustrating a portion of the steps in the manufacturing method of the semiconductor device 2 according to Modified Example 1. Furthermore, in the manufacturing method of the semiconductor device according to Modified Example 1, also... Figure 7A The semiconductor package 20 is pre-formed before the processing.
[0056] like Figure 7AAs shown, after the semiconductor package 20 and the metal bump 30 are formed and before the semiconductor package 20 is mounted onto the mounting substrate 10, a paste liquid 200a, which serves as a pre-curing filler 200, is applied to the entire lower surface of the lower surface 21a of the resin substrate 21 and the side surface 30a of the metal bump 30.
[0057] Then as Figure 7B As shown, the electrodes 13 of the mounting substrate 10 and the metal bumps 30 are overlapped and heated to 100°C or higher in an oven. This electrically connects the mounting substrate 10 to the semiconductor package 20. Additionally, liquid 200a solidifies to form the bottom filler 200.
[0058] Next, as Figure 7C As shown, a bottom filler 100 is formed in the portion of the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where the bottom filler 200 is not formed.
[0059] The method for manufacturing the semiconductor and semiconductor device according to Modification 1 achieves the same effect as the semiconductor device 1 and the method for manufacturing the semiconductor device 1 described in the above embodiments.
[0060] (Variation Example 2) The following is for reference Figures 8A-8B The semiconductor device 3 of Modified Example 2 will be described below. The semiconductor device 3 of Modified Example 2 differs from the embodiment described above in the location where the bottom filler 100 is provided. Furthermore, in the following descriptions, the same reference numerals will be used for components identical to those in the embodiment described above, and their descriptions will sometimes be omitted.
[0061] Figures 8A-8B This is a schematic diagram illustrating an example of the configuration of the semiconductor device 3 involved in Modification 2. More specifically, Figure 8A This is the XZ cross-sectional view of semiconductor device 3, which is related to... Figure 1A The corresponding diagram. Figure 8B yes Figure 8A The cross-sectional view along line AA. That is, Figure 8B This is an XY cross-sectional view of the semiconductor device 3 at a height position between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21.
[0062] like Figures 8A-8B As shown, a bottom filler 200 is filled in the space RA, which is located between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, and corresponds to the central side of the lower surface 21a of the resin substrate 21. That is, the bottom filler 100 is not disposed around the metal bump 30 disposed in the space RA.
[0063] On the other hand, both a bottom filler 100 and a bottom filler 200 are disposed in the space RB corresponding to the outer peripheral side of the lower surface 21a of the resin substrate 21. That is, the bottom filler 100 and the bottom filler 200 are disposed around the metal bump 30 disposed in the space RB. The bottom filler 100 and the bottom filler 200 in the space RB have the same configuration as the bottom filler 100 and the bottom filler 200 in the embodiment, so their description is omitted here.
[0064] If used Figures 2A-2B as well as Figures 3A-3B As described above, among the plurality of metal bumps 30 disposed between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21, the outermost metal bumps 30 experience greater thermal stress. Therefore, by selectively distributing the bottom filler 200, which can mitigate thermal stress, in the space RB, the thermal stress applied to the metal bumps 30 disposed in the space RB can be mitigated more effectively.
[0065] The method for manufacturing the semiconductor and semiconductor device according to Modification 2 achieves the same effect as the semiconductor device 1 and the method for manufacturing semiconductor device 1 in the above-described embodiments. Furthermore, Modification 2 can also be applied as a modification of Modification 1, in addition to the above-described embodiments.
[0066] (Variation Example 3) The following is for reference Figure 9 The semiconductor device 4 of Modified Example 3 will be described.
[0067] Modification 3 is a modification corresponding to Embodiment 1 and Modification 1. That is, in the semiconductor device 4 according to Modification 3, the location where the bottom filler 200 is provided differs from that in Embodiment 1 and Modification 1 described above. Furthermore, hereafter, the same reference numerals will be used to denote components identical to those in the embodiments described above, and their descriptions will sometimes be omitted.
[0068] Figure 9 This is a schematic cross-sectional view showing an example of the configuration of the semiconductor device 4 involved in Modification 3.
[0069] like Figure 9 As shown, in the semiconductor device 4 of Modified Example 3, the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 are not covered by the bottom filler 200. That is, the bottom filler 200 covers the side surface 30a of the metal bump 30.
[0070] Such a semiconductor device 4 can be used in variation 1. Figures 7A to 7C In the process described in the text, Figure 7AWhen applying liquid 200a, the lower surface 21a of the resin substrate 21 is covered with a mask film (not shown). This is to prevent the paste-like liquid 200a from being coated onto the lower surface 21a of the resin substrate 21. The mask film is removed, for example, before forming the underfill 100.
[0071] The method for manufacturing the semiconductor and semiconductor device according to Modification 3 achieves the same effect as the semiconductor device 1 and the method for manufacturing the semiconductor device 1 in the above embodiments.
[0072] (Variation Example 4) Below, refer to Figure 10 The following explanation is given for variation 4.
[0073] In the semiconductor device 5 according to Variation 4, the positions of the bottom filler 100 and the bottom filler 200 are opposite to those in the above embodiment. Furthermore, hereinafter, the same reference numerals will be used to denote components identical to those in the above embodiment, and their descriptions will sometimes be omitted.
[0074] Figure 10 This is a schematic cross-sectional view showing an example of the configuration of the semiconductor device 5 involved in Modification 4.
[0075] like Figure 10 As shown, the bottom filler 100 covers the upper surface 10a of the mounting substrate 10, the side surface 30a of the metal bump 30, and the lower surface 21a of the resin substrate 21. The bottom filler 200 fills the portion of the space between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21 where the bottom filler 100 is not disposed. The bottom filler 100 is an example of a second bottom filler, and the bottom filler 200 is an example of a first bottom filler. The bottom filler 100 and bottom filler 200 in Modification 4 have the same configuration as the bottom filler 100 and bottom filler 200 in the embodiment, except that their placement is reversed, so their description is omitted here.
[0076] The semiconductor device 5 according to Modification 4 achieves the same effect as the semiconductor device 1 of the above-described embodiment. Furthermore, Modification 4 can also be applied as a modification of Modifications 1 and 3, in addition to the above-described embodiments.
[0077] (Other variations) In the above embodiments and modifications, an example was described in which two portions of bottom filler with different glass transition temperatures were provided between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21. However, the number of bottom fillers is not limited to this. For example, three portions of bottom filler with different glass transition temperatures may also be provided between the upper surface 10a of the mounting substrate 10 and the lower surface 21a of the resin substrate 21.
[0078] In addition, the method for manufacturing the semiconductor device described in the claims may also be the method described in the following notes. (Postscript 1) According to the semiconductor device manufacturing method of embodiment 7 or 8, the second bottom filler has a higher glass transition temperature than the first bottom filler. (Postscript 2) According to the semiconductor device manufacturing method of embodiment 7 or 8, the first bottom filler has a higher glass transition temperature than the second bottom filler. (Note 3)
[0079] According to the semiconductor device manufacturing method of embodiment 7 or 8, the second bottom filler covers at least a portion of the second surface. (Postscript 4) According to the semiconductor device manufacturing method of embodiment 7 or 8, the second bottom filler covers at least a portion of the first surface.
[0080] While several embodiments of the invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, and are included within the scope equivalent to the invention as described in the claims. [Explanation of reference numerals in the attached figures]
[0081] 1-5: Semiconductor device; 10: Mounting substrate; 10a: Upper surface; 13, 23: Electrode; 20: Semiconductor package; 21: Resin substrate; 21a: Lower surface; 30: Metal bump; 100, 200: Bottom filler.
Claims
1. A semiconductor device comprising: Mounting substrate; An encapsulation substrate is disposed opposite to the first surface on a first direction side that intersects with the first surface of the mounting substrate; Metal bumps are disposed between the first surface of the mounting substrate and the encapsulation substrate; The first bottom filler, as seen from the metal protrusion, is disposed on the second direction side along the first surface; as well as A second bottom filler is disposed between the metal bump and the first bottom filler. The first bottom packing and the second bottom packing have different glass transition temperatures.
2. The semiconductor device according to claim 1, wherein, The second bottom packing has a higher glass transition temperature than the first bottom packing.
3. The semiconductor device according to claim 1, wherein, The first bottom packing has a higher glass transition temperature than the second bottom packing.
4. The semiconductor device according to claim 1, wherein, The second bottom filler covers at least a portion of the second side of the encapsulation substrate opposite to the mounting substrate.
5. The semiconductor device according to claim 4, wherein, The second bottom filler covers at least a portion of the first surface of the mounting substrate.
6. The semiconductor device according to claim 1, wherein, The mounting base plate has: Conductive layer; and A first connecting portion, which is connected to the conductive layer, is formed on the first surface. The packaging substrate has: More than one semiconductor chip; as well as A second connecting portion, which is connected to one or more semiconductor chips, is formed on a second surface opposite to the mounting substrate. The metal bump connects the first connecting part to the second connecting part.
7. The semiconductor device according to claim 1, wherein, The metal bump is formed into a spherical shape.
8. The semiconductor device according to claim 1, wherein, A plurality of metal bumps, including the metal bumps, are disposed between the first surface of the mounting substrate and the packaging substrate. The second bottom filler is used to fill the space between two adjacent metal bumps located on the central side of the packaging substrate.
9. The semiconductor device according to claim 2, wherein, The first bottom filler has a glass transition temperature lower than the temperature of the environment in which the semiconductor device is placed. The second bottom packing has a glass transition temperature that is higher than the ambient temperature.
10. A method for manufacturing a semiconductor device, comprising the following processes: The packaging substrate having multiple metal bumps on the second side is mounted onto the first side of the mounting substrate via the multiple metal bumps; A second bottom filler is formed to cover at least a portion of the third surface of the plurality of metal protrusions exposed between the first and second surfaces; as well as A first bottom filler is formed in the portion between the first surface and the second surface where the second bottom filler is not formed. The first bottom packing and the second bottom packing have different glass transition temperatures.
11. A method for manufacturing a semiconductor device, comprising the following processes: A second bottom filler is formed to cover at least a portion of a plurality of metal bumps disposed on the second side of the packaging substrate; The encapsulation substrate is mounted onto the first surface of the mounting substrate via the plurality of metal bumps; as well as A first bottom filler is formed in the portion between the first surface and the second surface where the second bottom filler is not formed. The first bottom packing and the second bottom packing have different glass transition temperatures.
12. The method of manufacturing a semiconductor device according to claim 10, wherein, The second bottom filler is formed using at least one of the following methods: coating, adhesion, and spraying.
13. The method of manufacturing a semiconductor device according to claim 10, wherein, The second bottom packing has a higher glass transition temperature than the first bottom packing.
14. The method of manufacturing a semiconductor device according to claim 10, wherein, The first bottom packing has a higher glass transition temperature than the second bottom packing.
15. The method of manufacturing a semiconductor device according to claim 11, wherein, The second bottom filler is formed using at least one of the following methods: coating, adhesion, and spraying.
16. The method of manufacturing a semiconductor device according to claim 11, wherein, The second bottom packing has a higher glass transition temperature than the first bottom packing.
17. The method of manufacturing a semiconductor device according to claim 11, wherein, The first bottom packing has a higher glass transition temperature than the second bottom packing.