High-temperature superconducting substrate through hole implementation method and superconducting filter based on through hole dual-mode resonator

Abstract

The invention discloses a high-temperature superconducting filter based on a through hole dual-mode resonator, a high-temperature superconducting substrate through hole implementation method and a radar. The method comprises the steps that a metal gold plating layer and a high-temperature superconducting thin film layer on the surface of a to-be-punched area are removed; a bonding pad area is reserved around the punching area, the metal gold plating layer is reserved, and the high-temperature superconducting thin film layer is removed; laser drilling is conducted on the to-be-drilled area through the laser drilling technology to obtain a vertical through hole, and the superconducting substrate is placed in acetone and absolute ethyl alcohol to be subjected to ultrasonic cleaning; injecting conductive silver paste into the grounding through hole and filling the grounding through hole with the conductive silver paste, and putting the superconducting substrate into a constant-temperature oven for heating and curing; conducting a conductivity test on the solidified grounding through hole; and fixing the qualified superconducting substrate on the bottom plate of the metal packaging shell through the conductive silver paste, and baking the superconducting substrate in the constant-temperature oven again to complete packaging to obtain the grounding through hole of the high-temperature superconducting substrate. Stable grounding and substrate integration of the high-temperature superconducting circuit are realized, and the filter has the characteristics of low insertion loss, high selectivity and compact structure.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of high-temperature superconducting circuits and microwave communication technology, and particularly relates to a high-temperature superconducting filter based on a via dual-mode resonator, a high-temperature superconducting substrate via implementation method and a radar. BACKGROUND

[0002] With the continuous development of modern wireless communication and radar systems, especially under the background of the increasingly significant miniaturization trend, the requirements for filter performance are also increasing. Superconducting filters, with their excellent characteristics such as low loss and high quality factor, have been widely used in high-performance filter design. At the same time, with the increasing demand for miniaturized filters, superconducting filters effectively reduce the size through the combination of grounding structures and multi-mode filter designs. This design scheme not only greatly reduces the physical size but also ensures good performance, thereby making it widely used in various miniature radar systems.

[0003] However, due to the fragility of superconducting superconducting substrate materials such as MgO, conventional mechanical punching is prone to cause cracking. Therefore, traditional superconducting filters usually use gold wire bonding or conductive silver paste to connect the superconducting thin film circuit with the outer metal shell of the filter to achieve grounding, thereby avoiding the risk of structural damage caused by mechanical punching. However, this grounding method is actually a compromise due to technical limitations. In order to achieve bonding or welding, a larger pad area often needs to be reserved on the superconducting thin film circuit, which not only increases the size of the filter but also limits the flexibility of circuit layout. At the same time, since it must rely on shell grounding, this method introduces additional constraints on the layout design of the filter, reducing the overall design freedom. In addition, the traditional multi-mode resonator structure is usually complex, and it controls the mode frequency position by increasing the physical size to achieve multi-mode control. According to the design theory of coupled filters, introducing transmission zeros outside the passband can significantly improve the selectivity of the filter. Currently, there are two main ways to introduce transmission zeros: one is to increase the open branch line structure, and the other is to achieve cross-coupling through clever structural layout. However, these methods often lead to increased structural complexity and size, making the design and processing more difficult, thereby limiting their widespread application in practical engineering. SUMMARY

[0004] The main purpose of the present application is to provide a high-temperature superconducting filter based on a via dual-mode resonator, a high-temperature superconducting substrate via implementation method and a radar, aiming to provide a filter with a wide passband, low insertion loss, wide stopband, high selectivity, simple structure design, convenient mode frequency control and many other advantages, to effectively meet the dual requirements of modern high-performance radar systems for filter performance and integration.

[0005] To achieve the above object, the application provides a high-temperature superconducting filter based on a via dual-mode resonator, comprising: A superconducting substrate and a high-temperature superconducting film layer arranged on the superconducting substrate, wherein the high-temperature superconducting film layer is configured with a filter circuit, and the superconducting substrate is provided with a grounding via prepared by a laser drilling process, and the grounding via provides grounding for the filter circuit after being subjected to a metallization process. The filter circuit comprises an input 50Ω microstrip feed line, an output 50Ω microstrip feed line, a first feed line auxiliary line structure, a second feed line auxiliary line structure, eight grounding stepped impedance microstrip line structures, and four rectangular microstrip blocks. The eight grounding stepped impedance microstrip line structures are first to eighth grounding stepped impedance microstrip line structures, and the four rectangular microstrip blocks are first to fourth rectangular microstrip blocks. The input 50Ω microstrip feed line is connected with the first grounding stepped impedance microstrip line structure through the first feed line auxiliary line structure, the first grounding stepped impedance microstrip line structure is connected with the second grounding stepped impedance microstrip line structure through the first rectangular microstrip block, the second grounding stepped impedance microstrip line structure is arranged adjacent to the third grounding stepped impedance microstrip line structure, the third grounding stepped impedance microstrip line structure is connected with the fourth grounding stepped impedance microstrip line structure through the second rectangular microstrip block, the fourth grounding stepped impedance microstrip line structure is arranged adjacent to the fifth grounding stepped impedance microstrip line structure, the fifth grounding stepped impedance microstrip line structure is connected with the sixth grounding stepped impedance microstrip line structure through the third rectangular microstrip block, the sixth grounding stepped impedance microstrip line structure is arranged adjacent to the seventh grounding stepped impedance microstrip line structure, the seventh grounding stepped impedance microstrip line structure is connected with the eighth grounding stepped impedance microstrip line structure through the fourth rectangular microstrip block, and the eighth grounding stepped impedance microstrip line structure is connected with the output 50Ω microstrip feed line through the second feed line auxiliary line structure. The eight grounding stepped impedance microstrip line structures and the four rectangular microstrip blocks combine to form four grounding dual-mode resonators, and the four grounding dual-mode resonators are cross-coupled through their own structures to provide and control transmission zeros outside a passband of the filter and positions of the transmission zeros.

[0006] Optionally, the four grounding dual-mode resonators are first to fourth grounding dual-mode resonators, and the four grounding dual-mode resonators are cross-coupled. The first grounding dual-mode resonator comprises the first grounding stepped impedance microstrip line structure, the first rectangular microstrip block, and the second grounding stepped impedance microstrip line structure. The second grounding dual-mode resonator comprises the third grounding stepped impedance microstrip line structure, the second rectangular microstrip block, and the fourth grounding stepped impedance microstrip line structure. The third grounding dual-mode resonator comprises the fifth grounding stepped impedance microstrip line structure, the third rectangular microstrip block, and the sixth grounding stepped impedance microstrip line structure. The fourth grounded dual-mode resonator includes a seventh grounded step impedance microstrip line structure, a fourth rectangular microstrip block, and an eighth grounded step impedance microstrip line structure. The four grounded dual-mode resonators together provide eight pole frequencies.

[0007] Optionally, the odd and even modes of the first grounded dual-mode resonator can be controlled by adjusting the relative position of the first rectangular microstrip block with respect to the first and second grounded step impedance microstrip line structures. By adjusting the relative position of the second rectangular microstrip block with respect to the third and fourth grounded step impedance microstrip line structures, the odd and even modes of the second grounded dual-mode resonator can be controlled. By adjusting the relative position of the third rectangular microstrip block with respect to the fifth and sixth grounded step impedance microstrip line structures, the odd and even modes of the third grounded dual-mode resonator can be controlled. The odd and even modes of the fourth grounded dual-mode resonator are controlled by adjusting the relative position of the fourth rectangular microstrip block with respect to the seventh and eighth grounded step impedance microstrip line structures.

[0008] Optionally, the cross-coupling of the four grounded dual-mode resonators includes same-mode coupling and different-mode coupling between adjacent grounded dual-mode resonators; Wherein, the same-mode coupling refers to the coupling between the odd mode of the preceding grounded dual-mode resonator and the odd mode of the following grounded dual-mode resonator, and between the even mode of the preceding grounded dual-mode resonator and the even mode of the following grounded dual-mode resonator. The heteromode coupling refers to the coupling between the odd mode of the preceding grounded dual-mode resonator and the even mode of the following grounded dual-mode resonator, and between the even mode of the preceding grounded dual-mode resonator and the odd mode of the following grounded dual-mode resonator. The coupling coefficient is controlled by adjusting the spacing between adjacent grounded dual-mode resonators, thereby controlling the position of the transmission zero point of the high-temperature superconducting filter.

[0009] Optionally, the superconducting substrate is an MgO substrate with a thickness of 500 μm, the diameter of the grounding via is 0.3 mm, the aspect ratio is 1.67, and a pad area with a diameter of 0.7 mm is reserved on the surface of the superconducting substrate at the position corresponding to the grounding via, and the pad area retains a metal plating layer.

[0010] Optionally, the high-temperature superconducting thin film layer is made of yttrium barium copper oxide or bismuth strontium calcium copper oxide, and the critical temperature of the high-temperature superconducting thin film layer is not lower than 77K degrees Celsius.

[0011] Optionally, the filter circuit has a symmetrical structure; The center line connecting the four grounded dual-mode resonators forms the axis of symmetry of the symmetrical structure. The input 50Ω microstrip feed line and the output 50Ω microstrip feed line are symmetrically arranged along the axis of symmetry, and the first feed line auxiliary line structure and the second feed line auxiliary line structure are symmetrically arranged along the axis of symmetry.

[0012] Optionally, the first feed line auxiliary line structure is used to adjust the coupling strength between the input 50Ω microstrip feed line and the first grounded dual-mode resonator; The second feed line auxiliary line structure is used to adjust the coupling strength between the output 50Ω microstrip feed line and the fourth grounded dual-mode resonator.

[0013] In addition, to achieve the above object, the application also provides a high-temperature superconducting substrate via implementation method, applied to the high-temperature superconducting filter based on the via dual-mode resonator in any one of the preceding embodiments, the method comprising: Determine the to-be-punched area on the superconducting substrate, and remove the metal gold-plated layer and the high-temperature superconducting thin film layer on the surface of the to-be-punched area; Reserve a pad area around the to-be-punched area of the superconducting substrate, and remove the high-temperature superconducting thin film layer while retaining the metal gold-plated layer in the pad area; Replace mechanical processing with laser punching process to perform laser punching in the to-be-punched area, and obtain a vertical via, wherein the vertical via includes a grounding via and a radio frequency interconnection via, and the radio frequency interconnection via is used to connect the coplanar waveguide transmission lines of two adjacent layers; Place the superconducting substrate with the vertical via in acetone and anhydrous ethanol for ultrasonic cleaning; Inject conductive silver paste into the grounding via and fill it, and place the superconducting substrate in a constant temperature oven for heating and solidification; Conductivity test is conducted on the solidified grounding via; Fix the superconducting substrate that passes the test to the metal packaging shell bottom plate through the conductive silver paste, and complete packaging after baking in the constant temperature oven again to obtain the grounding via of the high-temperature superconducting substrate.

[0014] In addition, to achieve the above object, the application also provides a radar comprising the high-temperature superconducting filter based on the via dual-mode resonator in any one of the preceding embodiments.

[0015] The application embodiment provides a high-temperature superconducting filter based on a through-hole dual-mode resonator, a high-temperature superconducting substrate through-hole implementation method and a radar. The filter comprises a superconducting substrate and a high-temperature superconducting film layer arranged on the superconducting substrate. A filter circuit is arranged on the high-temperature superconducting film layer. A grounding through-hole prepared by a laser drilling process is arranged on the superconducting substrate. The grounding through-hole provides grounding for the filter circuit after being subjected to a metalization process. The filter circuit comprises an input 50Ω microstrip feed line, an output 50Ω microstrip feed line, a first feed line auxiliary line structure, a second feed line auxiliary line structure, eight grounding stepped impedance microstrip line structures and four rectangular microstrip blocks. The eight grounding stepped impedance microstrip line structures are respectively first to eighth grounding stepped impedance microstrip line structures. The four rectangular microstrip blocks are respectively first to fourth rectangular microstrip blocks. The input 50Ω microstrip feed line is connected with the first grounding stepped impedance microstrip line structure through the first feed line auxiliary line structure. The first grounding stepped impedance microstrip line structure is connected with the second grounding stepped impedance microstrip line structure through the first rectangular microstrip block. The second grounding stepped impedance microstrip line structure is arranged adjacent to the third grounding stepped impedance microstrip line structure. The third grounding stepped impedance microstrip line structure is connected with the fourth grounding stepped impedance microstrip line structure through the second rectangular microstrip block. The fourth grounding stepped impedance microstrip line structure is arranged adjacent to the fifth grounding stepped impedance microstrip line structure. The fifth grounding stepped impedance microstrip line structure is connected with the sixth grounding stepped impedance microstrip line structure through the third rectangular microstrip block. The sixth grounding stepped impedance microstrip line structure is arranged adjacent to the seventh grounding stepped impedance microstrip line structure. The seventh grounding stepped impedance microstrip line structure is connected with the eighth grounding stepped impedance microstrip line structure through the fourth rectangular microstrip block. The eighth grounding stepped impedance microstrip line structure is connected with the output 50Ω microstrip feed line through the second feed line auxiliary line structure. The eight grounding stepped impedance microstrip line structures and the four rectangular microstrip blocks combine to form four grounding dual-mode resonators. The four grounding dual-mode resonators generate cross coupling through their own structures to provide and control transmission zeros outside a passband of the filter and positions of the transmission zeros.

[0016] The method comprises: A to-be-drilled region is determined on the superconducting substrate, and a metal gold plating layer and a high-temperature superconducting film layer on a surface of the to-be-drilled region are removed. A pad region is reserved around the to-be-drilled region of the superconducting substrate, and the metal gold plating layer is retained in the pad region and the high-temperature superconducting film layer is removed. A laser drilling process is used to replace mechanical processing to perform laser drilling on the to-be-drilled region, and a vertical through-hole is obtained. The vertical through-hole comprises a grounding through-hole and a radio frequency interconnection through-hole used for connecting coplanar waveguide transmission lines of adjacent two layers. The superconducting substrate with the vertical through-hole is placed in acetone and anhydrous ethanol for ultrasonic cleaning. Conductive silver paste is injected into the grounding through-hole and filled, and the superconducting substrate is placed in a constant-temperature oven for heating and solidification. The solidified grounding via is subjected to a conduction test; The test qualified superconducting substrate is fixed to the metal packaging shell bottom plate through the conductive silver paste, and the packaging is completed after being baked in the constant temperature oven again, so that the grounding via of the high-temperature superconducting substrate is obtained The application has the following beneficial effects: 1. The high-temperature superconducting substrate via realization method is first proposed, which promotes the three-dimensional integration development of the high-temperature superconducting circuit.

[0017] 2. The double-mode frequency is realized by introducing the rectangular microstrip block structure between the grounding step impedance microstrip lines, and the mode frequency is simple and controllable.

[0018] 3. The grounding double-mode resonator proposed in the application does not need to add an open-circuit branch line structure and skillfully arrange the filter structure when performing multi-stage coupling, and the structure itself can directly generate a transmission zero point through cross-coupling between different modes, so that the designed filter has strong selectivity.

[0019] 4. It has the characteristics of flexible design, compact structure and easy integration, and is suitable for the production of high-temperature superconducting thin films with high quality factors. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 The high-temperature superconducting substrate via structure provided by an embodiment of the application is shown in the figure; Figure 2 The coplanar waveguide transmission line structure using the high-temperature superconducting substrate via provided by an embodiment of the application is shown in the figure; Figure 3 The S parameter response of the coplanar waveguide transmission line structure using the high-temperature superconducting substrate via provided by an embodiment of the application is shown in the figure; Figure 4 The wideband filter structure applied to high-temperature superconducting and having the grounding double-mode resonator provided by an embodiment of the application is shown in the figure; Figure 5 The top view of the upper layer radiation metal patch of the wideband filter applied to high-temperature superconducting and having the grounding double-mode resonator provided by an embodiment of the application is shown in the figure; Figure 6 The grounding double-mode resonator structure provided by an embodiment of the application is shown in the figure; Figure 7 The odd mode and even mode resonance frequencies of the grounding double-mode resonator structure provided by an embodiment of the application and the frequency response under different relative positions d are shown in the figure; Figure 8 The odd mode equivalent circuit of the grounding double-mode resonator provided by an embodiment of the application is shown in the figure; Figure 9The ground dual-mode resonator equivalent circuit provided by an embodiment of the application; Figure 10 The two-stage ground dual-mode resonator coupling layout provided by an embodiment of the application; Figure 11 The two-stage ground dual-mode resonator coupling topology provided by an embodiment of the application; Figure 12 The relationship between the coupling coefficient between different modes and the coupling distance s provided by an embodiment of the application; Figure 13 The size and layout of the four-pole high-temperature superconducting filter based on the ground dual-mode resonator provided by an embodiment of the application; Figure 14 The simulation results of the two-stage four-pole filter based on the ground dual-mode resonator structure provided by an embodiment of the application; Figure 15 The four-stage ground dual-mode resonator structure coupling topology provided by an embodiment of the application; Figure 16 The size and layout of the four-stage ground dual-mode resonator structure provided by an embodiment of the application; Figure 17 The S-parameter response of the four-stage ground dual-mode resonator structure provided by an embodiment of the application.

[0021] The implementation, functional features and advantages of the present application will be further described with reference to the accompanying drawings in conjunction with the embodiments. DETAILED DESCRIPTION

[0022] It should be understood that the specific embodiments described herein are merely intended to explain the present application and are not intended to limit the present application.

[0023] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application. The high-temperature superconducting substrate via implementation method and the superconducting filter based on the via of the present application are described in detail in conjunction with the drawings and embodiments as follows: In the first embodiment of the present application, a high-temperature superconducting substrate via implementation method is provided, and the steps thereof include: The high-temperature superconducting filter based on the via dual-mode resonator is applied to any one of claims 1-8, and the method includes: The area to be punched is determined on the superconducting substrate (1), and the metal gold plating layer and the high-temperature superconducting thin film layer on the surface of the area to be punched are removed; Reserve a solder pad area around the to-be-punched area of the superconducting substrate (1), and remove the high-temperature superconducting thin film layer in the solder pad area; Laser punching process is adopted to replace mechanical processing, and laser punching is performed in the to-be-punched area to obtain vertical through holes, wherein the vertical through holes include a grounding through hole (18) and a radio frequency interconnection through hole for connecting the coplanar waveguide transmission lines of two adjacent layers; The superconducting substrate (1) with the vertical through holes is placed in acetone and anhydrous ethanol for ultrasonic cleaning; Conductive silver paste is injected into the grounding through hole (18) and filled, and the superconducting substrate (1) is placed in a constant temperature oven for heating and curing; The grounding through hole (18) after curing is tested for conductivity; The superconducting substrate (1) that passes the test is fixed to the metal packaging shell bottom plate through the conductive silver paste, and the packaging is completed after being baked in the constant temperature oven again, to obtain the grounding through hole (18) of the high-temperature superconducting substrate.

[0024] In an embodiment of the present application, the parameters of the laser punching process are as follows: laser power 20 W, pulse frequency 100 kHz, and pulse width 5 ps, and the Au layer and the high-temperature superconducting thin film layer on the surface of the solder pad area are removed before laser punching.

[0025] In an embodiment of the present application, the material of the high-temperature superconducting thin film layer is yttrium barium copper oxide (YBCO) or bismuth strontium calcium copper oxide (BSCCO), and the critical temperature is not lower than 77 K.

[0026] wherein, Figure 1 A high-temperature superconducting substrate through hole structure schematic diagram in the embodiment of the present application is shown. The present application adopts a YBCO superconducting layer MgO (dielectric constant εr = 9.8) high-temperature superconducting superconducting substrate, and proposes a new type of high-temperature superconducting through hole vertical interconnection structure. In the specific design, the aspect ratio (AR) of the high-temperature superconducting through hole needs to be considered comprehensively, which is defined as the ratio of the through hole depth h to the through hole diameter D. In order to take into account the excellent microwave performance of the superconducting substrate and the processing feasibility of the through hole structure, the present application proposes a high-temperature superconducting substrate through hole parameter design method. Considering that too small through hole diameter may not be completely filled in the metallization and filling process, thereby affecting the transmission performance, under the condition that the thickness of the superconducting substrate is 500 μm, the diameter D of the through hole is preferably 0.3 mm, and the corresponding aspect ratio AR is 1.67, which effectively guarantees the stability of the device performance and the implementability of the manufacturing process.

[0027] For further clear and complete description of the processing implementation of the high-temperature superconducting via structure in the embodiments of the present application, the present application provides a via design and manufacturing method suitable for high-temperature superconducting MgO substrate, aiming at solving the problem of substrate cracking caused by high brittleness of MgO substrate and traditional punching method in the prior art.

[0028] Specifically includes the following steps and technical points: 1. Optimization design of laser punching process: In view of the stress damage problem possibly caused by traditional mechanical punching, the present application adopts laser punching process instead of mechanical processing, and realizes precise processing of the superconducting substrate by adjusting laser processing parameters such as laser power (about 20 W), pulse frequency (about 100 kHz), pulse width (about 5 ps) and the like, so as to avoid cracks or structural damage. As shown in the formula (1), in the vertical via structure of the superconducting substrate prepared by the present application, two superconducting substrate vertical vias are used as radio frequency interconnection vias for connecting the upper and lower layer coplanar waveguide transmission lines, and the remaining superconducting substrate vertical vias are used as grounding vias, so that the structure is compact and the connection is reliable. Figure 2

[0029] 2. Surface coating treatment of via area: In order to ensure effective transmission of laser energy and improve punching efficiency, the present application removes the gold (Au) layer and YBCO superconducting layer on the surface of the superconducting substrate vertical via punching area in advance. If this step is not performed, the Au layer may cause laser reflection, thereby reducing the punching efficiency and even hindering the formation of the via.

[0030] 3. Pad reservation and metallization support structure design: The present application reserves a pad area with a diameter of 0.7 mm at the position of the superconducting substrate vertical via, and retains a metal gold plating layer at the pad, so as to enhance the adhesion between the conductive material and the substrate in the subsequent metallization filling process, improve the electrical connection stability and via reliability.

[0031] ​3、After the punching process is completed, the superconducting substrate vertical via structure needs to be further metallized to realize vertical electrical interconnection. The present application proposes the following metallization process flow: (1) substrate cleaning: ultrasonic cleaning of the superconducting substrate in acetone and anhydrous ethanol to remove surface oil and residual particles and ensure the cleanliness of the via interior. (2) conductive silver paste filling: using injection to uniformly fill conductive silver paste into the superconducting substrate vertical via, ensuring that the via inner wall is completely covered with conductive material to form a good vertical conduction path. (3) high-temperature curing treatment: placing the sample filled with conductive silver paste into a 150℃ constant temperature oven for 30 minutes to promote internal curing of the silver paste and form a stable conductive connection structure. (4) electrical performance test: conducting a conduction test on all superconducting substrate vertical vias that have completed metallization to ensure reliable via connection without open circuit or high resistance phenomenon. (5) device packaging: fixing the processed device on the metal packaging shell bottom plate through conductive silver paste and baking again at 150℃ for 30 minutes to complete the final packaging and bonding. (6) low-temperature environmental performance test: placing the packaged sample in a test cavity, cooling to about 73K, and measuring and verifying key performance indicators such as S parameters.

[0032] To verify the proposed high-temperature superconducting via structure, the present application designs a superconducting coplanar waveguide transmission line as an example structure through the above method. In this structure, the high-temperature superconducting via is used to realize vertical interconnection between the top layer and the bottom layer coplanar waveguide transmission line, and the specific structure is as shown in Figure 2 Figure 3 The S parameter response curve of the coplanar waveguide transmission line based on the high-temperature superconducting substrate via in the embodiment of the present application is shown. The simulation results are highly consistent with the actual processing test results, both showing excellent transmission performance, fully verifying the effectiveness and feasibility of the proposed high-temperature superconducting via structure of the present application.

[0033] Based on the above embodiment, the second embodiment of the present application provides a high-temperature superconducting filter based on a via dual-mode resonator, which can include: ​The application discloses a superconducting substrate (1) and a high-temperature superconducting film layer arranged on the superconducting substrate (1), wherein a filter circuit is arranged on the high-temperature superconducting film layer, and a grounding via hole (18) is arranged on the superconducting substrate (1) and prepared by a laser drilling process, and the grounding via hole (18) is subjected to a metallization treatment to realize grounding of the filter circuit. The filter circuit comprises an input 50Ω microstrip feed line (2), an output 50Ω microstrip feed line (17), a first feed line auxiliary line structure (3), a second feed line auxiliary line structure (16), eight grounding stepped impedance microstrip line structures and four rectangular microstrip blocks, wherein the eight grounding stepped impedance microstrip line structures are first to eighth grounding stepped impedance microstrip line structures (4, 6, 7, 9, 10, 12, 13, 15), and the four rectangular microstrip blocks are first to fourth rectangular microstrip blocks (5, 8, 11, 14). The input 50Ω microstrip feed line (2) is connected with the first grounding stepped impedance microstrip line structure (4) through the first feed line auxiliary line structure (3), the first grounding stepped impedance microstrip line structure (4) is connected with the second grounding stepped impedance microstrip line structure (6) through the first rectangular microstrip block (5), the second grounding stepped impedance microstrip line structure (6) is arranged adjacent to the third grounding stepped impedance microstrip line structure (7), the third grounding stepped impedance microstrip line structure (7) is connected with the fourth grounding stepped impedance microstrip line structure (9) through the second rectangular microstrip block (8), the fourth grounding stepped impedance microstrip line structure (9) is arranged adjacent to the fifth grounding stepped impedance microstrip line structure (10), the fifth grounding stepped impedance microstrip line structure (10) is connected with the sixth grounding stepped impedance microstrip line structure (12) through the third rectangular microstrip block (11), the sixth grounding stepped impedance microstrip line structure (12) is arranged adjacent to the seventh grounding stepped impedance microstrip line structure (13), the seventh grounding stepped impedance microstrip line structure (13) is connected with the eighth grounding stepped impedance microstrip line structure (15) through the fourth rectangular microstrip block (14), and the eighth grounding stepped impedance microstrip line structure (15) is connected with the output 50Ω microstrip feed line (17) through the second feed line auxiliary line structure (16). The eight grounding stepped impedance microstrip line structures and the four rectangular microstrip blocks are combined to form four grounded dual-mode resonators, and the four grounded dual-mode resonators are cross-coupled through the structures thereof to form passband transmission zero points.

[0034] In an embodiment of the present application, the four grounded dual-mode resonators are respectively the first to fourth grounded dual-mode resonators, the first grounded dual-mode resonator is composed of a first grounded stepped-impedance microstrip line structure (4), a first rectangular microstrip block (5) and a second grounded stepped-impedance microstrip line structure (6), the second grounded dual-mode resonator is composed of a third grounded stepped-impedance microstrip line structure (7), a second rectangular microstrip block (8) and a fourth grounded stepped-impedance microstrip line structure (9), the third grounded dual-mode resonator is composed of a fifth grounded stepped-impedance microstrip line structure (10), a third rectangular microstrip block (11) and a sixth grounded stepped-impedance microstrip line structure (12), and the fourth grounded dual-mode resonator is composed of a seventh grounded stepped-impedance microstrip line structure (13), a fourth rectangular microstrip block (14) and an eighth grounded stepped-impedance microstrip line structure (15), and the four grounded dual-mode resonators collectively provide eight pole frequencies.

[0035] In an embodiment of the present application, the relative positions of the first rectangular microstrip block (5) relative to the first and second grounded stepped-impedance microstrip line structures (4, 6) are adjusted to control the odd-even mode frequencies of the first grounded dual-mode resonator. The relative positions of the second rectangular microstrip block (8) relative to the third and fourth grounded stepped-impedance microstrip line structures (7, 9) are adjusted to control the odd-even mode frequencies of the second grounded dual-mode resonator. The relative positions of the third rectangular microstrip block (11) relative to the fifth and sixth grounded stepped-impedance microstrip line structures (10, 12) are adjusted to control the odd-even mode frequencies of the third grounded dual-mode resonator. The relative positions of the fourth rectangular microstrip block (14) relative to the seventh and eighth grounded stepped-impedance microstrip line structures (13, 15) are adjusted to control the odd-even mode frequencies of the fourth grounded dual-mode resonator.

[0036] In an embodiment of the present application, the cross-coupling includes the self-mode coupling and the different-mode coupling between adjacent grounded dual-mode resonators. The self-mode coupling is the coupling between the odd mode of a previous grounded dual-mode resonator and the odd mode of a subsequent grounded dual-mode resonator, and the coupling between the even mode of the previous grounded dual-mode resonator and the even mode of the subsequent grounded dual-mode resonator. The different-mode coupling is the coupling between the odd mode of a previous grounded dual-mode resonator and the even mode of a subsequent grounded dual-mode resonator, and the coupling between the even mode of the previous grounded dual-mode resonator and the odd mode of the subsequent grounded dual-mode resonator. The coupling coefficient is controlled by adjusting the spacing between adjacent grounded dual-mode resonators, and the position of the transmission zero is further controlled.

[0037] In an embodiment of the present application, the filter circuit is a left-right symmetric structure, taking the center line of the four grounded dual-mode resonators as the symmetry axis, the input 50Ω microstrip feed line (2) and the output 50Ω microstrip feed line (17) are symmetrically arranged, and the first feed line auxiliary line structure (3) and the second feed line auxiliary line structure (16) are symmetrically arranged.

[0038] In an embodiment of the present application, the first feed line auxiliary line structure (3) is used to adjust the coupling strength between the input 50Ω microstrip feed line (2) and the first grounded dual-mode resonator, and the second feed line auxiliary line structure (16) is used to adjust the coupling strength between the output 50Ω microstrip feed line (17) and the fourth grounded dual-mode resonator.

[0039] In an embodiment of the present application, the superconducting substrate (1) is an MgO substrate with a thickness of 500μm, the diameter of the grounding via (18) is 0.3mm, the aspect ratio is 1.67, and the superconducting substrate (1) surface at the position corresponding to the grounding via (18) is reserved with a solder pad area with a diameter of 0.7mm, and the solder pad area is reserved with a metal gold plating layer.

[0040] Figure 4 A structure schematic diagram of a wideband filter with grounded dual-mode resonators applied to high-temperature superconductivity in an embodiment of the present application is shown. The filter comprises a superconducting substrate (1) and a high-temperature superconducting thin film layer on the superconducting substrate, and a filter circuit is constructed on the high-temperature superconducting thin film layer. The filter circuit comprises a first grounded stepped impedance microstrip line structure (4), a second grounded stepped impedance microstrip line structure (6), a third grounded stepped impedance microstrip line structure (7), a fourth grounded stepped impedance microstrip line structure (9), a fifth grounded stepped impedance microstrip line structure (10), a sixth grounded stepped impedance microstrip line structure (12), a seventh grounded stepped impedance microstrip line structure (13), an eighth grounded stepped impedance microstrip line structure (15), a first rectangular microstrip block (5), a second rectangular microstrip block (8), a third rectangular microstrip block (11), a fourth rectangular microstrip block (14), a first feed line auxiliary line structure (3), a second feed line auxiliary line structure (16), an input, an output 50Ω microstrip feed line (2) (17), wherein: The first grounded stepped impedance microstrip line structure (4) has the first feed line auxiliary line structure (3) and the input end 50Ω microstrip feed line (2) connected thereto on the left side. The first grounded stepped impedance microstrip line structure (4) has the first feed line auxiliary line structure (3) and the input end 50Ω microstrip feed line (2) connected thereto on the left side. The microstrip feed line (2) is connected with the second ground stepped impedance microstrip line structure (6) through the first rectangular microstrip patch (5) on the right side, the third ground stepped impedance microstrip line structure (7) is on the right side of the second ground stepped impedance microstrip line structure (6), the fourth ground stepped impedance microstrip line structure (9) is connected with the third ground stepped impedance microstrip line structure (7) through the second rectangular microstrip patch (8), the fifth ground stepped impedance microstrip line structure (10) is on the right side of the fourth ground stepped impedance microstrip line structure (9), the sixth ground stepped impedance microstrip line structure (12) is connected with the fifth ground stepped impedance microstrip line structure (10) through the third rectangular microstrip patch (11), the seventh ground stepped impedance microstrip line structure (13) is on the right side of the sixth ground stepped impedance microstrip line structure (12), the eighth ground stepped impedance microstrip line structure (15) is connected with the seventh ground stepped impedance microstrip line structure (13) through the fourth rectangular microstrip patch (14), and the second feed line auxiliary line structure (16) and the output 50 The microstrip feed line (17).

[0041] It is to be noted that the first, second, third, fourth ground double-mode resonator (4, 5, 6) (7, 8, 9) (10, 11, 12) (13, 14, 15) and the input and output 50 The overall filter structure composed of the first and second microstrip feed lines (2) (17) is a left-right symmetric structure.

[0042] It is to be noted that the first, second, third, fourth, fifth, sixth, seventh, and eighth ground stepped impedance microstrip line structures (4) (6) (7) (9) (10) (12) (13) (15) are mainly composed of low-resistance microstrip lines, high-resistance microstrip lines, and ground. Among them, the ground processing method adopted in this example is to punch a larger microstrip patch block on the upper layer of the superconducting substrate and then punch holes to realize the interconnection of the upper and lower layers of the superconducting substrate.

[0043] It is to be noted that the first, second, third, and fourth rectangular microstrip blocks (5), (8), (11), and (14) mainly play a role in constructing double-mode resonators and adjusting the frequency position of odd and even modes.

[0044] It is to be noted that the first and second feed line auxiliary line structures (3) (16) mainly play a role in cooperating with the input and output 50 The microstrip feed lines (2) (17) provide appropriate coupling strength for the overall filter structure.

[0045] It should be noted that the high-temperature superconducting thin film layer material can be yttrium barium copper oxide (YBCO) or bismuth strontium calcium copper oxide (BSCCO). High-temperature superconducting thin film generally refers to a superconducting material with a critical temperature above 77K and a resistance close to zero, which can be used in liquid nitrogen (77K) refrigeration environment, and is mainly divided into two types: yttrium barium copper oxide (YBCO) and bismuth strontium calcium copper oxide (BSCCO). Compared with conventional thin film materials (such as copper), high-temperature superconducting thin film has zero resistance and diamagnetism in the superconducting state.

[0046] Figure 5 A top view of the upper radiation metal patch of the high-temperature superconducting wideband filter with grounded dual-mode resonators in the embodiment of the application is shown, which has an overall shape of a rectangle in this embodiment, and the remaining dimensions can also form a corresponding filter circuit, and it should be noted that the simulation tool used in the application is Sonnet EM, the superconducting substrate used is MgO / YBCO, and the dielectric constant of the substrate is 9.73. This embodiment is only one of the solutions.

[0047] The length and width of the first, second, third and fourth grounded dual-mode resonators (4, 5, 6) (7, 8, 9) (10, 11, 12) (13, 14, 15) and the relative positions of the first, second, third and fourth rectangular microstrip blocks (5, 8, 11, 14) determine the number and spectral position of the mode frequencies of the filter.

[0048] The first, second, third and fourth grounded dual-mode resonators (4, 5, 6) (7, 8, 9) (10, 11, 12) (13, 14, 15) produce cross-coupling between them to provide and control the transmission zeros outside the passband of the filter and their positions.

[0049] The first and second feed line auxiliary line structures (3) (16) mainly function to cooperate with the input and output 50 The microstrip feed lines (2) (17) mainly function to enhance coupling and excitation.

[0050] Figure 6 The grounded dual-mode resonator structure in the embodiment of the application is shown, and the parameters of the specific structure are labeled. Figure 7 The odd mode and even mode resonance frequencies of the grounded dual-mode resonator structure in the embodiment of the application and the frequency response at different relative positions d are given. It can be seen that when l 1= 2.92mm, l 2= 1.08mm, l 3= 4.12mm, w 1=0.8mm, w 2=0.44mm, w3 = 0.16 mm, w 4 = 0.04 mm, s 1 = 0.12 mm, r = 0.15 mm, the position of the rectangular microstrip block relative to the resonator d increasing from 0.2 mm to 0.6 mm, the odd mode frequency of the dual-mode filter moves to lower frequencies, while the even mode frequency remains almost unchanged. Since the resonator structure designed is a symmetric structure, the mode frequencies of the resonator can be analyzed according to the odd-even mode analysis method. Figure 8 and Figure 9 give the odd mode and even mode equivalent circuits of the grounded dual-mode resonator, respectively. When an electric wall is placed at the middle symmetry plane of the resonator, the structure exhibits odd mode resonance, as shown in Figure 7 At this time, the input admittance of the resonator can be calculated using the following equation: ,

[0051] At the same time, since the electrical length of the microstrip block used in the present example θ 3 is relatively small and can be almost ignored, it is assumed that θ 3 = 0, according to the resonator resonance condition, let Y in-odd = 0, the odd mode frequency f odd At this time, it can be calculated by the following equation: ,

[0052]

[0053] Similarly, when a magnetic wall is placed at the middle symmetry plane of the resonator, the structure exhibits even mode resonance, as shown in Figure 4 At this time, the input admittance of the resonator Y in-even can be calculated using the following equation: , According to the resonator resonance condition, let Y in-even = 0, the even mode frequency f even At this time, it can be calculated by the following equation: ,

[0054] Figure 10 and Figure 11The coupling layout of two-stage grounded dual-mode resonators and the coupling topology of two-stage grounded dual-mode resonators in the embodiment of the present application are shown respectively. It can be seen that the coupling coefficients between two-stage dual-mode resonators are divided into the following three types: the coupling coefficient m oo between the odd mode of resonator 1 and the odd mode of resonator 2, oo the coupling coefficient m ee between the even mode of resonator 1 and the even mode of resonator 2, eo and the coupling coefficient m eo between the odd mode and the even mode of resonators 1, 2. oe The first two coupling coefficients can be calculated by the following formula: ,

[0055] wherein f 2 and f 1 are the pole frequencies and the coupling coefficient m eo can be calculated by the following formula: ,

[0056] wherein f 01 and f 02 are the self-resonant frequencies of the resonators.

[0057] Figure 12 The relationship curves of the coupling coefficients m ee , m oo and m eo and the spacing s between the grounded dual-mode resonators in the present example are shown. By adjusting the appropriate spacing s , the coupling coefficients can be indirectly adjusted to appropriate values, and finally good filter performance can be obtained.

[0058] Figure 13 The size and layout of the four-pole high-temperature superconducting filter based on the grounded dual-mode resonator in the embodiment of the present application are given. Figure 14 The simulation results of the two-stage four-pole filter based on the grounded dual-mode resonator structure in the embodiment of the present application are shown. It can be seen from the figure that the filter center frequency is 3 GHz, the relative bandwidth is 33.3%, and the ratio of the center frequency to the first out-of-band frequency is about 3.2. Due to the cross coupling between the odd mode and the even mode of different resonators, a pair of transmission zeros TZ1 and TZ2 are generated outside the passband of the filter. They are located at 1.67 GHz and 3.84 GHz, respectively, and the S 21S21 is better than -50dB in the frequency range of 3.58GHz to 7.29GHz.

[0059] Meanwhile, in order to further prove the superiority of the grounding dual-mode resonator design method and structure proposed in the present example, a four-order grounding dual-mode resonator is subsequently designed. Figure 15 and Figure 16 The four-order and its specific size and layout of the grounding dual-mode resonator coupling topology are given respectively, and similar to the two-order grounding dual-mode filter shown in the present example, the direct coupling coefficients between the same modes between resonators 1, 2, 3, and 4 are m o1o2 , m o2o3 , m o3o4 , m e1e2 , m e2e3 , and m e3e4 , and the coupling coefficients m e1o2 , m e2o3 , and m e3o4 (m e2o1 =m e1o2 , m e2o3 =m e3o2 , m e4o3 =m e3e4 ) are generated through the cross coupling between different modes of resonators 1, 2, 3, and 4, and a pair of transmission zeros are introduced under the action thereof. The coupling coefficients of the four-order grounding dual-mode resonator can still be calculated by the coupling coefficient formula of the two-order grounding dual-mode filter shown in the present example.

[0060] Figure 17 The final response curve of the four-order dual-mode filter is shown. From the figure, it can be seen that the passband range below -3dB of the filter of the present example is 2.58GHz-3.425GHz, the absolute bandwidth is 0.845GHz, the ratio of the center frequency to the first octave is about 3.14, and the highest value of S11 in the overall passband is -19.88dB and the rest is close to or less than -20dB, which shows that the filter of the present example has good wideband and low return loss performance in the passband. S21 is better than -50dB in the frequency range of 3.58GHz to 7.29GHz, in the range of -3dB (3.425GHz) to -86.54dB (3.62GHz), the analog attenuation slope of the higher frequency band edge is 443.79dB / GHz, the lower limit edge is 369.11dB / GHz, and the range is -3dB (2.58GHz) to -86.74dB (2.345GHz), which shows that the filter designed by using the design method of the present example has strong selectivity and out-of-band suppression performance and engineering practical value.

[0061] In summary, the application proposes a three-dimensional integration method based on high-temperature superconducting substrate via structure, and designs a grounded dual-mode resonator scheme applied to high-temperature superconducting filter. The scheme realizes efficient interconnection of upper and lower circuits in YBCO / MgO superconducting substrate by introducing superconducting substrate vertical via technology, and provides a feasible path for three-dimensional integration of high-temperature superconducting circuit. The grounded dual-mode resonator structure designed on this basis is compact, and the odd mode and even mode frequencies can be flexibly controlled through the relative position of the microstrip block, with high design freedom. The resonator can realize the generation of transmission zero points in the body structure without additional open-circuit branches or complex structures, significantly improving the selectivity and out-of-band suppression performance of the filter. The four-order transversely cross-coupled filter based on the resonator shows low insertion loss, excellent frequency response and compact physical size. In addition, the structure has strong process compatibility, is easy to process, is suitable for high-temperature superconducting thin film process with high quality factor, and has good engineering practicability and broad application prospect.

[0062] The above is only the preferred embodiment of the application, and does not limit the patent scope of the application, and any equivalent structure or equivalent flow transformation using the content of the specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the application.

Claims

1. A high temperature superconducting filter based on via dual mode resonator characterized in that, The application relates to a filter circuit and a preparation method thereof. The filter circuit comprises an input 50-ohm microstrip feed line (2), an output 50-ohm microstrip feed line (17), a first feed line auxiliary line structure (3), a second feed line auxiliary line structure (16), eight ground stepped impedance microstrip line structures and four rectangular microstrip blocks. The eight ground stepped impedance microstrip line structures are respectively first to eighth ground stepped impedance microstrip line structures (4, 6, 7, 9, 10, 12, 13, 15), and the four rectangular microstrip blocks are respectively first to fourth rectangular microstrip blocks (5, 8, 11, 14). The input 50-ohm microstrip feed line (2) is connected with the first ground stepped impedance microstrip line structure (4) through the first feed line auxiliary line structure (3), the first ground stepped impedance microstrip line structure (4) is connected with the second ground stepped impedance microstrip line structure (6) through the first rectangular microstrip block (5), the second ground stepped impedance microstrip line structure (6) is arranged adjacent to the third ground stepped impedance microstrip line structure (7), the third ground stepped impedance microstrip line structure (7) is connected with the fourth ground stepped impedance microstrip line structure (9) through the second rectangular microstrip block (8), the fourth ground stepped impedance microstrip line structure (9) is arranged adjacent to the fifth ground stepped impedance microstrip line structure (10), the fifth ground stepped impedance microstrip line structure (10) is connected with the sixth ground stepped impedance microstrip line structure (12) through the third rectangular microstrip block (11), the sixth ground stepped impedance microstrip line structure (12) is arranged adjacent to the seventh ground stepped impedance microstrip line structure (13), the seventh ground stepped impedance microstrip line structure (13) is connected with the eighth ground stepped impedance microstrip line structure (15) through the fourth rectangular microstrip block (14), and the eighth ground stepped impedance microstrip line structure (15) is connected with the output 50-ohm microstrip feed line (17) through the second feed line auxiliary line structure (16). The eight ground stepped impedance microstrip line structures and the four rectangular microstrip blocks are combined to form four ground dual-mode resonators, and the four ground dual-mode resonators are cross-coupled through the structures to provide and control transmission zero points and positions outside a filter passband. The four ground dual-mode resonators are respectively first to fourth ground dual-mode resonators, and the four ground dual-mode resonators are cross-coupled.

2. The via-based dual-mode resonator high temperature superconducting filter of claim 1, wherein, The first ground dual-mode resonator comprises the first ground stepped impedance microstrip line structure (4), the first rectangular microstrip block (5) and the second ground stepped impedance microstrip line structure (6). The second ground dual-mode resonator comprises the third ground stepped impedance microstrip line structure (7), the second rectangular microstrip block (8) and the fourth ground stepped impedance microstrip line structure (9). The third ground dual-mode resonator comprises the fifth ground stepped impedance microstrip line structure (10), the third rectangular microstrip block (11) and the sixth ground stepped impedance microstrip line structure (12). The fourth ground dual-mode resonator comprises the seventh ground stepped impedance microstrip line structure (13) and the eighth ground stepped impedance microstrip line structure (15). The fourth grounded dual-mode resonator comprises a seventh grounded stepped-impedance microstrip line structure (13), a fourth rectangular microstrip block (14), and an eighth grounded stepped-impedance microstrip line structure (15); The four grounded dual-mode resonators collectively provide eight pole frequencies.

3. The via-based dual-mode resonator high temperature superconducting filter of claim 2, wherein, The odd-even modes of the first grounded dual-mode resonator are adjusted by adjusting the relative position of the first rectangular microstrip block (5) relative to the first and second grounded stepped-impedance microstrip line structures (4, 6); The odd-even modes of the second grounded dual-mode resonator are adjusted by adjusting the relative position of the second rectangular microstrip block (8) relative to the third and fourth grounded stepped-impedance microstrip line structures (7, 9); The odd-even modes of the third grounded dual-mode resonator are adjusted by adjusting the relative position of the third rectangular microstrip block (11) relative to the fifth and sixth grounded stepped-impedance microstrip line structures (10, 12); The odd-even modes of the fourth grounded dual-mode resonator are adjusted by adjusting the relative position of the fourth rectangular microstrip block (14) relative to the seventh and eighth grounded stepped-impedance microstrip line structures (13, 15).

4. The via-based dual-mode resonator high temperature superconducting filter of claim 3, wherein, The cross-coupling of the four grounded dual-mode resonators comprises self-mode coupling and different-mode coupling between adjacent grounded dual-mode resonators; The self-mode coupling is the coupling between the odd mode of the former grounded dual-mode resonator and the odd mode of the latter grounded dual-mode resonator, and the coupling between the even mode of the former grounded dual-mode resonator and the even mode of the latter grounded dual-mode resonator; The different-mode coupling is the coupling between the odd mode of the former grounded dual-mode resonator and the even mode of the latter grounded dual-mode resonator, and the coupling between the even mode of the former grounded dual-mode resonator and the odd mode of the latter grounded dual-mode resonator; The coupling coefficient is controlled by adjusting the distance between adjacent grounded dual-mode resonators, thereby controlling the position of the transmission zero of the high-temperature superconducting filter.

5. The via-based dual-mode resonator high temperature superconducting filter of claim 1, wherein, The superconducting substrate (1) is an MgO substrate with a thickness of 500 μm, the diameter of the grounding via hole (18) is 0.3 mm, the aspect ratio is 1.67, and the surface of the superconducting substrate (1) at the position corresponding to the grounding via hole (18) is reserved with a solder pad area with a diameter of 0.7 mm, and the solder pad area is reserved with a metal gold plating layer.

6. The via-based dual-mode resonator high temperature superconducting filter of claim 1, wherein, The material of the high-temperature superconducting thin film layer is yttrium barium copper oxide or bismuth strontium calcium copper oxide, and the critical temperature of the high-temperature superconducting thin film layer is not less than 77 K degrees Celsius.

7. The via-based dual-mode resonator high temperature superconducting filter of claim 1, wherein, The filter circuit is of a symmetric structure; The center line of the four grounded dual-mode resonators is the symmetry axis of the symmetric structure, the input 50Ω microstrip feed line (2) and the output 50Ω microstrip feed line (17) are symmetrically arranged along the symmetry axis, and the first feed line auxiliary line structure (3) and the second feed line auxiliary line structure (16) are symmetrically arranged along the symmetry axis.

8. The via-based dual-mode resonator high temperature superconducting filter of claim 1, wherein, The first feed line auxiliary line structure (3) is used to adjust the coupling strength between the input 50Ω microstrip feed line (2) and the first grounded dual-mode resonator; The second feed line auxiliary line structure (16) is used to adjust the coupling strength between the output 50Ω microstrip feed line (17) and the fourth grounded dual-mode resonator.

9. A method for realizing through-holes in a high-temperature superconducting substrate, characterized in that, The method is applied to the high-temperature superconducting filter based on the via dual-mode resonator as claimed in any one of claims 1-8, and the method comprises: Determine the to-be-punched region on the superconducting substrate (1), and remove the metal gold-plated layer and the high-temperature superconducting film layer on the surface of the to-be-punched region; Reserve a pad region around the to-be-punched region of the superconducting substrate (1), and remove the high-temperature superconducting film layer while retaining the metal gold-plated layer in the pad region; Replace mechanical processing with laser punching process, and perform laser punching in the to-be-punched region to obtain vertical through holes, wherein the vertical through holes include a grounding through hole (18) and a radio frequency interconnection through hole for connecting the coplanar waveguide transmission lines of two adjacent layers; Place the superconducting substrate (1) with the vertical through holes in acetone and anhydrous ethanol for ultrasonic cleaning; Inject conductive silver paste into the grounding through hole (18) and fill it, and place the superconducting substrate (1) in a constant temperature oven for heating and solidification; Test the conductivity of the solidified grounding through hole (18); Fix the superconducting substrate (1) that passes the test to the metal packaging shell bottom plate through the conductive silver paste, and complete the packaging after baking in the constant temperature oven again to obtain the grounding through hole (18) of the high-temperature superconducting substrate.

10. A radar, characterized by The high-temperature superconducting filter based on the through-hole dual-mode resonator includes the high-temperature superconducting filter based on the through-hole dual-mode resonator according to any one of claims 1-8.

Images