Machining method, machining equipment and upper die device of machining equipment

Abstract

The invention provides a processing method, processing equipment and an upper die device thereof. The processing method comprises the following steps of: placing an integrated circuit element on a lower die device through a substrate; an upper die device is combined with the lower die device so as to cooperatively define a processing interval for processing the integrated circuit element. A negative pressure source is used for exhausting air in the processing area, so that processing gas flows into the processing area and can be subjected to oxidation-reduction reaction with an upper cover of the integrated circuit element; and the upper die device applies pressure to the upper cover. By means of the design that the processing gas flows into the processing area to enable the oxidation film layer formed on the upper cover to be reduced, the adhesion degree between the upper cover and a wafer can be improved, and the packaging processing quality is improved.

Description

Technical Field

[0001] This invention relates to a processing method, processing equipment, and a molding device thereof, particularly to a processing method, processing equipment, and molding device thereof for integrated circuit element packaging processes. Background Technology

[0002] Patent No. I568324, "Method and Apparatus for Placing a Heatsink," discloses a packaging process for an integrated circuit element. Before placing the heatsink, a first adhesive is applied to each of the four corners of the substrate surrounding the chip for adhesion to the lower periphery of the heatsink. A second adhesive is applied to the upper surface of the chip for adhesion to the inner edge of the raised surface in the center of the heatsink. After the heatsink is placed, the substrate carrying the heatsink is pressed together. Patent No. I688018, "Method and Apparatus for Applying a Thermal Pad," further discloses a packaging process for an integrated circuit element where a thermal pad is applied to the upper surface of the chip instead of the known second adhesive.

[0003] Since the heat sink and the chip are bonded and heat transferred using thermal interface materials such as adhesives or thermal pads, most heat sinks are currently made of metal materials, such as copper. However, metal materials are prone to oxidation due to air or high temperature, which can lead to the formation of an oxide film on the surface. This can result in poor adhesion between the lower surface of the heat sink and the upper surface of the chip, thus affecting the packaging quality. Summary of the Invention

[0004] Therefore, the object of the present invention is to provide a processing method that can improve upon at least one of the disadvantages of the prior art.

[0005] Therefore, the processing method of the present invention includes placing an integrated circuit element on a substrate on a lower mold device, wherein a wafer is disposed on the substrate, a thermal interface material is disposed on the wafer, and a top cover is disposed on the thermal interface material; combining an upper mold device with the lower mold device to define a processing area for processing the integrated circuit element; evacuating the processing area with a negative pressure source to allow a processing gas to flow into the processing area and react with the top cover to produce an oxidation-reduction reaction; and applying pressure to the top cover by the upper mold device.

[0006] Another object of the present invention is to provide an upper mold device that can improve upon at least one of the disadvantages of the prior art.

[0007] Therefore, the upper mold device of the present invention is suitable for use in conjunction with a lower mold device to apply pressure to an integrated circuit element and is used in conjunction with a processing gas. The upper mold device includes an upper mold mechanism, a gas storage unit, at least one air inlet unit, at least one air extraction unit, and a negative pressure source.

[0008] The upper mold mechanism is provided with a cover, and at least one air extraction connector and at least one air inlet connector are provided on the cover. The cover can be driven to engage with the lower mold device to define a processing area.

[0009] The gas storage unit can accommodate the processing gas. The at least one air inlet unit is in fluid communication with the gas storage unit and the at least one air inlet connector. The at least one air extraction unit is in fluid communication with the at least one air extraction connector.

[0010] The negative pressure source fluid is connected to the at least one extraction unit, and when it is activated, it will extract the gas in the processing area through the at least one extraction unit, thereby allowing the processing gas in the gas storage unit to flow into the processing area through the at least one intake unit.

[0011] Another object of the present invention is to provide a processing apparatus that can improve upon at least one disadvantage of the prior art.

[0012] Therefore, the processing equipment of the present invention is suitable for processing an integrated circuit element, and is provided with a lower mold device for mounting the integrated circuit element, and an upper mold device as described above. The upper mold device can be driven to engage with the lower mold device to define the processing area for processing the integrated circuit element.

[0013] Another object of the present invention is to provide a processing apparatus that can be used to perform the aforementioned processing method.

[0014] Another object of the present invention is to provide a processing method that can improve at least one disadvantage of the prior art.

[0015] Therefore, the processing method of the present invention includes placing an integrated circuit element on a substrate on a lower mold device, wherein a wafer is disposed on the substrate, a thermal interface material is disposed on the wafer, and a top cover is disposed on the thermal interface material; engaging an upper mold device with the lower mold device to define a processing area for processing the integrated circuit element; evacuating the processing area with a negative pressure source to allow a processing gas to flow into the processing area and reduce oxidation of the top cover; and applying pressure to the top cover by the upper mold device.

[0016] The advantages of this invention are: by using the negative pressure source to extract air from the processing area, the processing gas in the gas storage unit flows into the processing area through the at least one air intake unit. The processing gas can reduce the oxide film layer of the top cover or reduce the oxidation of the top cover, thereby improving the adhesion between the lower surface of the top cover and the upper surface of the wafer, thus improving the packaging process quality. Attached Figure Description

[0017] Other features and effects of the present invention will be clearly presented in the embodiments with reference to the accompanying drawings, wherein:

[0018] Figure 1 It is a three-dimensional view illustrating an integrated circuit element to be processed by the processing equipment of the present invention;

[0019] Figure 2 It is a 3D exploded view illustrating the integrated circuit element;

[0020] Figure 3 This is a perspective view illustrating a first embodiment of the processing equipment of the present invention;

[0021] Figure 4 yes Figure 3 An enlarged view of an incomplete portion illustrates the first embodiment;

[0022] Figure 5 This is an incomplete front view illustrating a situation where the integrated circuit element has not yet been stressed in this first embodiment;

[0023] Figure 6 This is an incomplete front view illustrating the situation where the first embodiment applies pressure to the integrated circuit element;

[0024] Figure 7 This is an incomplete schematic diagram illustrating an upper mold device of the first embodiment;

[0025] Figure 8 This is an incomplete schematic diagram illustrating the application of pressure to the integrated circuit element in the first embodiment; and

[0026] Figure 9 This is an incomplete schematic diagram illustrating a second embodiment of the processing equipment of the present invention, and illustrating the situation in which pressure is applied to an integrated circuit element in the second embodiment.

[0027] [Symbol Explanation]

[0028] 100: Processing equipment

[0029] 2: Seat Mechanism

[0030] 21: Top Seat

[0031] 22: Base

[0032] 23: Pole Post

[0033] 3: Upper mold device

[0034] 31: Gas storage unit

[0035] 311: Container

[0036] 312: Heater

[0037] 313: Liquid Retention Area

[0038] 314: Gas Storage Area

[0039] 32: Intake unit

[0040] 321: Intake pipe

[0041] 322: Intake valve

[0042] 33: Air extraction unit

[0043] 331: Extraction pipe

[0044] 332: Evacuation valve

[0045] 34: Negative pressure source

[0046] 4: Lower mold device

[0047] 40: Processing area

[0048] 41: Bearing Unit

[0049] 42: Lower pressing die unit

[0050] 421: Second heating seat

[0051] 422: Lower pressing die

[0052] 423: Second heating element

[0053] 43: Base cover unit

[0054] 5: Detector

[0055] 6: Upper mold mechanism

[0056] 61: Carrier Unit

[0057] 611: Upper Seat

[0058] 612: Download dock

[0059] 613: Connector

[0060] 62: First drive unit

[0061] 621: First driving component

[0062] 622: Guide rod mechanism

[0063] 63: Second drive unit

[0064] 631: Second drive unit

[0065] 632: Drive lever

[0066] 64: Upper mold unit

[0067] 641: Stretch lever mechanism

[0068] 642: Cover

[0069] 643: First heating seat

[0070] 644: Upper mold

[0071] 645: Air extraction connector

[0072] 646: Air intake connector

[0073] 647: First heating element

[0074] 8: Integrated circuit components

[0075] 81: Substrate

[0076] 82: Chip

[0077] 83: Thermal interface materials

[0078] 84: Top Cover

[0079] 85: Adhesive

[0080] 86: Gap

[0081] 91: Redox Liquid

[0082] 92: Processing Gases Detailed Implementation

[0083] Before the invention is described in detail, it should be noted that similar elements are represented by the same numbers in the following description.

[0084] See Figure 1 , 3 7. A first embodiment of the processing equipment 100 of the present invention is suitable for applying pressure to an integrated circuit element 8 and is used in conjunction with a processing gas 92. Please refer to further details. Figure 2The integrated circuit element 8 includes a substrate 81, a chip 82 disposed at the center of the substrate 81, a thermal interface material 83 attached to the chip 82, a top cover 84 attached to both the substrate 81 and the chip 82, and adhesive 85 coated at the corner periphery of the substrate 81. The lower periphery of the lower surface of the top cover 84 can be bonded to the substrate 81 by the adhesive 85. The raised portion at the center of the lower surface of the top cover 84 can be bonded to the chip 82 by the thermal interface material 83 and transfer the heat generated by the chip 82. The thermal interface material 83 is made of a metallic material and is in sheet form; a preferred metallic component is indium (In). The top cover 84 is made of a metallic material; a preferred metallic component is copper (Cu). In this first embodiment, the processing gas 92 is formed by vaporizing a redox liquid 91, which is formic acid, but is not limited to this in practice. The processing equipment 100 is equipped with a solid mechanism 2, an upper mold device 3, a lower mold device 4, and a detector 5.

[0085] See Figure 4 , 5 7. The base mechanism 2 is provided with a top seat 21 and a base 22 spaced apart vertically, and four rods 23 extending vertically and connecting between the top seat 21 and the base 22 and located at the four corners respectively.

[0086] The upper mold device 3 is equipped with an upper mold mechanism 6, an air storage unit 31, two air inlet units 32, two air extraction units 33, and a negative pressure source 34.

[0087] The upper mold mechanism 6 includes a carrier unit 61 and a first drive unit 62 located on the base mechanism 2, a second drive unit 63 located on the carrier unit 61, and an upper mold unit 64 located on the carrier unit 61.

[0088] The carrier unit 61 is provided with an upper carrier 611 that is vertically displaceable relative to the rod 23 and is disposed on the rod 23, a lower carrier 612 that is spaced below the upper carrier 611, and two connecting seats 613 that are spaced apart from each other and connected vertically between the upper carrier 611 and the lower carrier 612.

[0089] The first drive unit 62 is mounted vertically through the top seat 21 and is provided with a first drive member 621 connected above the upper seat 611 to drive the seat unit 61 to move vertically, and four guide rod mechanisms 622 extending vertically and fixed to the upper surface of the upper seat 611, moving in conjunction with the upper seat 611 and protruding above the top seat 21.

[0090] The second drive unit 63 is provided with a second drive member 631 located below the upper carrier 611, and a drive rod 632 that can be driven by the second drive member 631 to push downward against the upper mold unit 64. The drive displacement stroke of the second drive member 631 is less than the drive displacement stroke of the first drive member 621.

[0091] The upper mold unit 64 is provided with a pressure rod mechanism 641 that passes through the lower base 612, a cover 642 with an opening facing downward and a through hole (not shown), a first heating base 643 located on the bottom side of the pressure rod mechanism 641 and installed in the through hole, an upper mold 644 located on the bottom side of the first heating base 643 and located inside the cover 642, two air extraction connectors 645 located on the left side of the cover 642, and two air inlet connectors 646 located on the right side of the cover 642.

[0092] The first heating base 643 is provided with a plurality of first heating elements 647 extending front to back and spaced apart left to right. The first heating elements 647 can be activated to generate heat and conduct heat to the upper mold 644, thereby giving the upper mold 644 a first predetermined pressing temperature.

[0093] In this first embodiment, the air extraction connector 645 and the air inlet connector 646 are respectively located on the left and right sides of the cover 642. However, in practice, as long as air can be extracted and inlet can be provided separately within the cover 642, their locations can also be located on adjacent sides of the cover 642, and are not limited thereto. Furthermore, there are two air extraction connectors 645 and two air inlet connectors 646, but in practice, one of each can also be used.

[0094] See Figure 3 , 7 The gas storage unit 31 is provided with a container 311 and a heater 312 located at the bottom of the container 311.

[0095] The container 311 has a liquid-containing area 313 at its bottom and a gas-containing area 314 above the liquid-containing area 313. The liquid-containing area 313 is used to contain the redox liquid 91. The gas-containing area 314 is used to contain the processing gas 92 formed by the vaporization of the redox liquid 91. Specifically, the container 311 is a filter bottle that is narrow at the top and wide at the bottom.

[0096] The heater 312 is used to heat the bottom of the container 311, thereby vaporizing the redox liquid 91 to form the processing gas 92, and raising the temperature of the processing gas 92 above room temperature to meet the temperature required for pressing. It should be noted that the temperature of the vaporized processing gas 92 is 90-120°C, preferably 100°C.

[0097] The air intake unit 32 is fluidly connected to the air intake connector 646 and the gas-containing area 314 of the container 311. Each air intake unit 32 is provided with an air intake pipe 321 that is fluidly connected to the container 311 area and the corresponding air intake connector 646, and an air intake valve 322 provided in the air intake pipe 321 and capable of adjusting the air intake volume of the processing gas 92.

[0098] The air extraction unit 33 is fluidly connected to the air extraction connector 645 and the negative pressure source 34. Each air extraction unit 33 is provided with an air extraction pipe 331 that is fluidly connected to the corresponding air extraction connector 645 and the negative pressure source 34, and an air extraction valve 332 provided in the air extraction pipe 331 and capable of adjusting the air extraction volume.

[0099] See Figure 4 , 5 8. The lower mold device 4 is provided with a support unit 41 on the base 22 of the seat mechanism 2, a lower pressing mold unit 42 on the support unit 41, and a frame-shaped bottom cover unit 43 surrounding the support unit 41.

[0100] The lower pressing mold unit 42 is provided with a second heating seat 421 disposed on the supporting unit 41, and a lower pressing mold 422 disposed on the top side of the second heating seat 421. The second heating seat 421 is provided with a plurality of second heating elements 423 extending front to back and spaced apart left to right. The second heating elements 423 can be activated to generate heat and conduct heat to the lower pressing mold 422, thereby giving the lower pressing mold 422 a second predetermined pressing temperature.

[0101] The bottom cover unit 43 can be abutted against by the cover 642 of the upper mold mechanism 6 to define a processing area 40. Figure 8 ).

[0102] The detector 5 is located on the support unit 41 and can detect the concentration of the processing gas 92 in the processing zone 40. In this first embodiment, the detector 5 detects the pH value of the processing gas 92 to determine its concentration. Alternatively, while the detector 5 is located on the support unit 41, in practice, as long as the purpose of detecting the concentration of the processing gas 92 in the processing zone 40 can be achieved, the detector 5 can also be located on the cover 642 of the upper mold device 3.

[0103] See Figure 5 , 6 7. The processing method performed by the processing equipment 100 of the present invention includes the following steps:

[0104] The integrated circuit element 8 is placed on the lower die 422 of the lower die device 4 on the substrate 81.

[0105] The upper mold assembly 3 and the lower mold assembly 4 are combined to define the processing area 40 for processing the integrated circuit element 8. Specifically, the first drive unit 62 drives the carrier unit 61 to move downwards relative to the rod 23, causing the upper mold unit 64 to seal the bottom cover unit 43 of the lower mold assembly 4 with the cover 642, thereby defining the sealed processing area 40. Figure 8 ).

[0106] The negative pressure source 34 draws air from the processing zone 40 so that the processing gas 92 flows into the processing zone 40 and can react with the top cover 84 of the integrated circuit element 8 to produce an oxidation-reduction reaction.

[0107] After the cover 642 covers the bottom cover unit 43, the air in the processing zone 40 is driven by the negative pressure source 34 and drawn out of the processing zone 40 via the extraction unit 33, thereby causing the processing gas 92 to flow into the processing zone 40 via the intake unit 32. It should be noted that when the concentration of the processing gas 92 in the processing zone 40 reaches a predetermined upper limit concentration, the negative pressure source 34 stops extracting air from the processing zone 40, so that the processing gas 92 remains in the processing zone 40.

[0108] The processing gas 92 remaining in the processing zone 40 will undergo a redox reaction with the oxide film layer formed on the surface of the upper cover 84. Taking the upper cover 84 of this first embodiment as an example, the upper cover 84 contains copper, and the oxide film layer is copper oxide. The processing gas 92 can reduce the copper oxide to copper. It should be further noted that although the lower periphery of the lower surface of the upper cover 84 is bonded to the substrate 81, because the adhesive 85 is only applied to the four corners of the substrate 81, the processing gas 92 can pass through several gaps 86 ( Figure 2 It enters the interior of the integrated circuit element 8 and can undergo an oxidation-reduction reaction with the lower surface of the top cover 84.

[0109] The first heating element 647 is activated to conduct heat to the upper mold 644, and the second heating element 423 is activated to conduct heat to the lower mold 422. This causes the upper mold 644 and the lower mold 422 to respectively have the first predetermined pressing temperature and the second predetermined pressing temperature. The upper mold 644, having the first predetermined pressing temperature, can melt the thermal interface material 83, and the lower mold 422, having the second predetermined pressing temperature, can soften the substrate 81.

[0110] The second drive unit 63 of the upper mold device 3 drives the pressure rod mechanism 641, thereby causing the upper pressure mold 644 located on the bottom side of the pressure rod mechanism 641 to apply pressure to the upper cover 84 and to heat the upper cover 84 by the upper pressure mold 644 of the upper mold device 3, or to heat the substrate 81 by the lower pressure mold 422 of the lower mold device 4.

[0111] The intake valve 322 of each intake unit 32 is closed, and the negative pressure source 34 evacuates the processing zone 40 to remove the processing gas 92 trapped within the processing zone 40, ensuring that the processing gas 92 in the gas storage unit 31 is not carried into the processing zone 40. This continues until the detector 5 detects that the concentration of the processing gas 92 is zero or below a predetermined lower limit concentration, at which point the upper mold device 3 is separated from the lower mold device 4.

[0112] See Figure 9 A second embodiment of the processing equipment 100 of the present invention has largely the same components as the first embodiment, except for the components of the gas storage unit 31. In this second embodiment, the processing gas 92 is nitrogen (N2). The gas storage unit 31 is only provided with the container 311, and the space defined by the container 311 is the gas holding area 314.

[0113] Because the integrated circuit element 8 will be subjected to high temperature in the processing zone 40, the top cover 84 of the integrated circuit element 8 is also prone to oxidation and the formation of an oxide film layer under the action of high temperature. Therefore, replacing the air in the processing zone 40 with nitrogen (N2) can reduce the formation of an oxide film layer on the top cover 84.

[0114] In summary, by using the negative pressure source 34 to evacuate the processing zone 40, thereby allowing the processing gas 92 in the gas storage unit 31 to flow into the processing zone 40, the processing gas 92 can reduce or decrease the oxide film layer on the top cover 84, thereby improving the adhesion between the lower surface of the top cover 84 and the upper surface of the wafer 82, thus improving the packaging quality.

[0115] The above description is merely an embodiment of the present invention and should not be construed as limiting the scope of the present invention. Any simple equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the patent specification of the present invention shall still fall within the scope of the patent of the present invention.

Claims

1. An upper mold device, suitable for use with a lower mold device to apply pressure to an integrated circuit element, and in conjunction with a processing gas, the upper mold device comprising: An upper mold mechanism is provided with a cover, and at least one air extraction connector and at least one air inlet connector provided on the cover. The cover can be driven to combine with the lower mold device to cooperate in defining a processing area. A gas storage unit is provided for containing the processing gas; At least one air intake unit is in fluid communication with the air storage unit and the at least one air intake connector; At least one air extraction unit, in fluid communication with the at least one air extraction connector; and A negative pressure source is fluidly connected to the at least one extraction unit, and when activated, it extracts the gas in the processing area through the at least one extraction unit, thereby allowing the processing gas in the gas storage unit to flow into the processing area through the at least one intake unit.

2. The upper mold device as described in claim 1, wherein, The at least one air extraction unit is provided with an air extraction pipe that fluidly connects the negative pressure source and the at least one air extraction connector, and an air extraction valve provided on the air extraction pipe and capable of adjusting the air extraction volume.

3. The upper mold device as described in claim 1, wherein, The at least one air intake unit is provided with an air intake pipe that fluidly connects the gas storage unit and the at least one air intake connector, and an air intake valve provided on the air intake pipe that can adjust the air intake volume of the processing gas.

4. The upper mold device as described in claim 1, wherein, The at least one exhaust port and the at least one intake port are respectively located on opposite sides of the cover.

5. The upper mold device as described in claim 4, comprising a plurality of air inlet units and a plurality of air extraction units, the upper mold mechanism comprising a plurality of air extraction connectors and a plurality of air inlet connectors, wherein the air extraction connectors are arranged side by side on one of the opposite sides of the cover and are respectively fluidly connected to the air extraction unit, and the air inlet connectors are arranged side by side on the other of the opposite sides of the cover and are respectively fluidly connected to the air inlet unit.

6. The upper mold apparatus as described in claim 1, wherein the processing gas is formed by the vaporization of a reduction-monoxide liquid, wherein, The gas storage unit is provided with a container, which has a liquid holding area at its bottom for holding the redox liquid, and a gas holding area above the liquid holding area and connected to the at least one gas inlet unit, which holds the processing gas.

7. The upper mold apparatus as described in claim 1, wherein the processing gas is formed by the vaporization of a reduction-monoxide liquid, wherein, The gas storage unit is equipped with a container and a heater, which is used to heat the container, thereby causing the redox liquid to vaporize into the processing gas and making the temperature of the processing gas higher than room temperature.

8. A processing method, comprising: An integrated circuit element is placed on a substrate on a molding device. The substrate has a chip, the chip has a thermal interface material, and the thermal interface material has a top cover. An upper mold device is combined with a lower mold device to define a processing area for processing the integrated circuit element. A negative pressure source is used to evacuate the processing area, allowing a processing gas to flow into the processing area and react with the top cover to produce an oxidation-reduction reaction; and The upper mold device applies pressure to the upper cover.

9. The processing method as described in claim 8, wherein, After the processing gas flows into the processing zone, the extraction of gas from the processing zone is stopped, so that the processing gas remains in the processing zone, and then the upper mold device applies pressure to the upper cover.

10. The processing method as described in claim 9, wherein, When the upper mold device applies pressure to the upper cover, the upper mold device heats the upper cover or the lower mold device heats the substrate.

11. The processing method as described in claim 9, wherein, After the upper mold device applies pressure to the upper cover, it extracts the processing gas trapped in the processing area and then separates the upper mold device from the lower mold device.

12. A processing method, comprising: An integrated circuit element is placed on a substrate on a molding device. The substrate has a chip, the chip has a thermal interface material, and the thermal interface material has a top cover. An upper mold device is combined with a lower mold device to define a processing area for processing the integrated circuit element. A negative pressure source is used to evacuate the processing area, allowing processing gas to flow into the processing area and reducing the oxidation of the top cover; and The upper mold device applies pressure to the upper cover.

13. A processing apparatus suitable for processing an integrated circuit element, and comprising: A molding device is provided for mounting the integrated circuit element; and The upper mold device as described in any one of claims 1 to 7 may be driven to engage with the lower mold device to define the processing area for processing the integrated circuit element.

14. The processing apparatus of claim 13 further includes a detector disposed on the lower mold device or the upper mold device, the detector being capable of detecting the concentration of the processing gas within the processing zone.

15. A processing apparatus for performing the processing method as described in any one of claims 8 to 12.

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