Substrate cleaning equipment and cleaning method

Abstract

The invention relates to the technical field of semiconductors, and provides substrate cleaning equipment and a cleaning method.The substrate cleaning equipment comprises an equipment body; the oxide layer cleaning device is arranged in the equipment body and is used for cleaning an oxide layer on the front surface of a substrate; the particulate matter cleaning device is arranged in the equipment body and is used for cleaning metal particulate matters and organic particulate matters on the surface of the substrate; and the substrate transfer device is movably mounted in the equipment body and is close to the oxide layer cleaning device and the particulate matter cleaning device. According to the cleaning equipment, the phenomena that the overall particles in the center position of the substrate are poor, and the particles adhered to the back oxygen and bevel edge areas cannot be effectively removed can be improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a substrate cleaning device and cleaning method. Background Technology

[0002] Silicon-on-insulator (SOI) is a semiconductor material technology used in integrated circuit manufacturing. This technology introduces a buried oxide layer between a top silicon layer and a back substrate. For example, two silicon substrates are thermally oxidized to obtain the SOI buried oxide layer, and then bonded together. The principle is to add an insulating material between silicon transistors. This technology, by forming a single-crystal silicon thin film layer on an insulating substrate, can effectively reduce parasitic capacitance and leakage current, improving chip performance and energy efficiency.

[0003] After peeling, rapid annealing, and oxidation reinforcement of the bonded wafers, an oxide layer of a certain thickness is formed on the surface of the top silicon layer. As the integration density of automotive-grade SOI materials for automotive chips increases, the performance of the top silicon particles becomes particularly important.

[0004] Existing equipment typically uses concentrated hydrofluoric acid to remove the oxide layer on the front side, followed by rinsing with DIW (deionized water) and drying to complete the removal. This cleaning method tends to cause particle aggregation in the central area of ​​the substrate, introducing a more severe pattern and resulting in poor overall particle quality on the front side of the substrate after etching. Simultaneously, particles adhering to the back oxide and bevel areas cannot be effectively removed, leading to poor substrate surface cleanliness and potentially contaminating subsequent processing equipment.

[0005] Therefore, a substrate cleaning equipment and cleaning method are needed to improve the phenomenon that the overall particle quality in the center of the substrate is poor and that particles adhering to the back oxide and bevel (slanted edge) areas cannot be effectively removed. Summary of the Invention

[0006] This invention provides a substrate cleaning device and cleaning method to improve the phenomenon that the overall particle quality at the center of the substrate is poor and that particles adhering to the back oxide and bevel (slanted edge) areas cannot be effectively removed.

[0007] This invention provides a substrate cleaning device, comprising:

[0008] Equipment body;

[0009] An oxide layer cleaning device is installed inside the device body, and the oxide layer cleaning device is used to clean the oxide layer on the front side of the substrate;

[0010] A particulate cleaning device is installed inside the device body. The particulate cleaning device is used to clean metal particles and organic particles on the surface of the substrate.

[0011] A substrate transfer device that is movably installed within the device body and located near the oxide layer cleaning device and the particulate matter cleaning device.

[0012] Optionally, the oxide layer cleaning apparatus includes at least one cleaning station;

[0013] The cleaning station described above uses HF solution, DIO3 solution, DIW liquid, and nitrogen to clean the front side of the substrate.

[0014] Optionally, the concentration of the DIO3 solution is 30 ppm, the concentration of the HF solution is 25%, the nitrogen flow rate is 5 L / min, and the flow rates of the DIO3 solution, HF solution, and DIW liquid are all 1.8 L / min.

[0015] Optionally, the particulate matter cleaning device includes a first particulate cleaning tank, a second particulate cleaning tank, and a third particulate cleaning tank arranged in sequence.

[0016] The first particle cleaning tank contains a DIO3 solution, the second particle cleaning tank contains an SC1 solution, and the third particle cleaning tank contains an SC2 solution.

[0017] Optionally, the particulate matter cleaning device further includes:

[0018] A drying tank is located on the side of the third particle cleaning tank away from the second particle cleaning tank;

[0019] A rinsing tank is provided with deionized water and is located between the second particle cleaning tank and the third particle cleaning tank and / or between the third particle cleaning tank and the drying tank.

[0020] Optionally, the concentration of the DIO3 solution is 30 ppm, and the concentrations of the SC1 solution and the SC2 solution are both 1:2, the flow rates are both 25 L / min, and the megahertz waves are both 2000 W.

[0021] Optionally, the particulate cleaning device further includes a rotating component;

[0022] The rotating component includes:

[0023] Back panel;

[0024] Two movable parts, which are arranged opposite to each other and rotatably mounted on the back plate; and

[0025] A rotating part connected to the moving part and rotatably mounted on the back plate has a plurality of receiving grooves for accommodating the substrate. By rotating the two moving parts, the two moving parts drive the corresponding rotating parts to move closer to each other, so that the substrate is inserted into the receiving groove and clamped between the two moving parts. Then, rotating the rotating part drives the substrate to rotate along the axial direction of the substrate.

[0026] Optionally, the rotating assembly further includes a base disposed on the top of the back plate for driving the moving part to rotate, a groove formed on the back plate and near the bottom of the back plate, and a slider slidably disposed in the groove;

[0027] One end of the moving part is mounted on the base, and the other end is mounted on the slider;

[0028] The rotating part is rotatably mounted on the slider;

[0029] The base drives the moving part to swing, and the slider moves along the groove, causing the two rotating parts to move closer or further apart.

[0030] Optionally, the moving part includes:

[0031] The first rotating shaft is driven and connected to the base;

[0032] The second rotating shaft mounted on the slider is rotatably mounted; and

[0033] A chain is meshed between the first rotating shaft and the second rotating shaft. The rotating part meshes with the chain and drives the first rotating shaft to rotate through the base, so that the chain drives the second rotating shaft and the rotating part to rotate.

[0034] Optionally, the moving part further includes:

[0035] A third rotating shaft is rotatably mounted on the back plate and located between the first rotating shaft and the second rotating shaft;

[0036] The chain includes a first chain and a second chain. The first chain meshes with the first rotating shaft and the third rotating shaft, the second chain meshes with the second rotating shaft and the third rotating shaft, and the rotating part meshes with the second chain.

[0037] Optionally, the substrate cleaning equipment further includes:

[0038] A heater connected to the oxide layer cleaning device and / or the particulate matter cleaning device is used to heat the cleaning solution in the oxide layer cleaning device and / or the particulate matter cleaning device.

[0039] and / or;

[0040] A filter connected to the oxide layer cleaning device and / or the particulate matter cleaning device is used to filter the cleaning solution in the oxide layer cleaning device and / or the particulate matter cleaning device.

[0041] Optionally, the substrate cleaning equipment further includes:

[0042] A first buffer stage is disposed within the device body and is used to place an uncleaned substrate;

[0043] A second buffer stage is disposed within the device body and is used to place the substrate cleaned by the oxide layer cleaning device;

[0044] A first flipping machine, disposed within the device body and near the second buffer platform, flips a horizontal substrate into a vertical position; and

[0045] A second flipping machine is installed inside the device body and close to the particulate matter cleaning device to flip the vertical substrate into a horizontal position.

[0046] The substrate is transported sequentially from the first buffer stage to the oxide layer cleaning device, the first flipping machine, the second buffer stage, the particulate matter cleaning device, and the second flipping machine via the substrate transfer device.

[0047] The present invention also provides a substrate cleaning method, comprising the following steps:

[0048] S1: Clean the oxide layer on the front side of the substrate;

[0049] S2: Clean the surface of the substrate to remove metal and organic particles.

[0050] The substrate cleaning method as described in claim 13, characterized in that, when cleaning the oxide layer on the front side of the substrate, it further includes:

[0051] The front oxide layer of the substrate was cleaned sequentially using HF solution, DIO3 solution, DIW cleaning, and nitrogen gas.

[0052] The concentration of the DIO3 solution is 30 ppm, the concentration of the HF solution is 25%, the nitrogen flow rate is 5 L / min, and the flow rates of the DIO3 solution, HF solution, and DIW liquid are all 1.8 L / min.

[0053] Optionally, when cleaning the surface of the substrate for metal particles and organic particles, the process further includes:

[0054] The substrate was sequentially immersed in DIO3 solution, SC1 solution and SC2 solution for cleaning;

[0055] The concentration of the DIO3 solution is 30 ppm, and the concentrations of the SC1 and SC2 solutions are both 1:2, the flow rates are both 25 L / min, the megahertz waves are both 2000 W, and the cleaning time is both 300 s.

[0056] The substrate cleaning equipment described above in this invention first cleans the oxide layer on the front side of the substrate using an oxide layer cleaning device. After cleaning, a particulate cleaning device cleans the metal and organic particles on the substrate surface, which can improve the overall poor particle quality in the center of the substrate and the inability to effectively remove particles adhering to the back oxide and bevel (slanted edge) areas. Through optimization of the cleaning process, based on the back oxide requirements of the substrate, only the oxide layer on the front side of the substrate is removed, which not only effectively removes the front oxide layer, but also improves the particle size and uniformity of the front side of the substrate, removes particle aggregation in the center of the substrate, improves cleaning ability, and optimizes the edges of the substrate surface. Attached Figure Description

[0057] Figure 1 This is a planar structural block diagram of a substrate cleaning device according to an embodiment of the present invention;

[0058] Figure 2 This is a schematic diagram of an oxide layer cleaning device according to an embodiment of the present invention;

[0059] Figure 3 This is a schematic diagram of the structure of a particulate matter cleaning device according to an embodiment of the present invention;

[0060] Figure 4 This is a schematic diagram of the structure of a rotating component according to an embodiment of the present invention. Figure 1 ;

[0061] Figure 5 This is a schematic diagram of the structure of a rotating component according to an embodiment of the present invention. Figure 2 ;

[0062] Figure 6 This is a schematic diagram of the structure of a rotating component according to an embodiment of the present invention. Figure 3 ;

[0063] Figure 7 This is a schematic diagram of the structure of a rotating component according to an embodiment of the present invention. Figure 4 ;

[0064] Figure 8 This is a partial side view of a rotating component according to an embodiment of the present invention;

[0065] Figure 9 This is a schematic diagram of the rotating part according to an embodiment of the present invention;

[0066] Figure 10 This is a schematic diagram of the structure of the first chain according to an embodiment of the present invention;

[0067] Figure 11 This is a schematic diagram of the structure of the rotating part after it is engaged with the substrate according to an embodiment of the present invention;

[0068] Figure 12 This is a partial structural diagram of the rotating part after it mates with the substrate according to an embodiment of the present invention;

[0069] Figure 13 This is a comparison image of the substrate cleaning effect.

[0070] In the attached diagram:

[0071] 10-Equipment body; 11-First buffer platform; 12-Second buffer platform; 13-First flipping machine; 14-Second flipping machine;

[0072] 20 - Oxide layer cleaning device; 201 - First cleaning station; 202 - Second cleaning station; 203 - Third cleaning station; 204 - Fourth cleaning station;

[0073] 21-Washing station; 22-Liquid recovery tank; 23-Liquid storage container; 24-First pump body; 25-First heater; 26-Second heater; 27-First filter; 28-Second filter; 29-Third filter;

[0074] 30-Particulate matter cleaning device; 301-Tank body; 302-Second pump body; 303-Concentration meter; 304-Third heater; 305-Fourth heater; 306-Third filter; 307-Fourth filter; 308-Circulation tank;

[0075] 31-First particle cleaning tank; 32-Second particle cleaning tank; 33-Third particle cleaning tank; 34-Drying tank; 35-Rinsing tank;

[0076] 40 - Substrate transfer device; 411 - First moving part; 4111 - First rotating shaft; 4112 - Second rotating shaft; 4113 - Third rotating shaft; 4114 - First chain; 4115 - Second chain; 4116 - Rotating part shaft; 4117 - Auxiliary wheel shaft;

[0077] 412-Second moving part; 413-Rotating part; 4131-Accommodating groove; 414-Base; 415-Lifting assembly; 416-Back plate; 417-Slide groove; 418-Auxiliary wheel;

[0078] 41-First robotic arm; 42-Second robotic arm; 43-Third robotic arm; 44-Fourth robotic arm;

[0079] 50 - Loading unit;

[0080] 100-substrate. Detailed Implementation

[0081] The substrate cleaning equipment and cleaning method proposed in this invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of this invention.

[0082] In this invention, "outer diameter" and "inner diameter" refer to the diameter of a circular structure, while for a non-circular structure, the inner diameter refers to the diameter of its inscribed circle and the outer diameter refers to the diameter of its circumscribed circle. "Axial direction" refers to the direction of the central axis of a cylindrical rod, while for a non-cylindrical rod, the axial direction refers to the length direction of the rod.

[0083] As used in this invention, the singular forms “a,” “an,” and “the” include plural objects; the term “or” is generally used to mean “and / or”; the term “a number” is generally used to mean “at least one”; and the term “at least two” is generally used to mean “two or more”. Furthermore, the terms “first,” “second,” and “third” are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with “first,” “second,” or “third” may explicitly or implicitly include one or at least two of that feature. Additionally, as used in this invention, “installed,” “connected,” “joined,” and “set” on one element by another should be interpreted broadly, generally indicating only a connection, coupling, mating, or transmission relationship between the two elements, which can be direct or indirect through an intermediate element. They should not be construed as indicating or implying a spatial positional relationship between the two elements, i.e., one element can be located inside, outside, above, below, or to one side of another element, unless otherwise explicitly stated. For those skilled in the art, the specific meaning of the above terms in this invention can be understood according to the specific circumstances. Furthermore, directional terms such as above, below, up, down, upward, downward, left, right, etc., are used relative to exemplary embodiments as shown in the figures, with upward or up direction pointing towards the top of the corresponding figure, and downward or down direction pointing towards the bottom of the corresponding figure.

[0084] Please refer to Figure 1 As shown, this embodiment provides a substrate cleaning device, including: a device body 10, an oxide layer cleaning device 20, a particulate matter cleaning device 30, and a substrate transfer device 40.

[0085] like Figure 1The diagram shows the plan layout of the substrate cleaning equipment. Inside the equipment body 10, an oxide layer cleaning device 20 is located on the left side, and a particulate matter cleaning device 30 is located on the right side.

[0086] The oxide layer cleaning device 20 is used to clean the oxide layer on the front side of the substrate.

[0087] The substrate transfer device 40 is used to transfer the substrate that has been cleaned in the oxide layer cleaning device 20 to the particulate matter cleaning device 30.

[0088] The particulate cleaning device 30 is used to clean the metal particles and organic particles transferred to the substrate surface (front and back) by the substrate transfer device 40.

[0089] Combination Figure 1 As shown, the substrate transfer device 40 includes a first robotic arm 41, and also includes a second robotic arm 42, a third robotic arm 43 and a fourth robotic arm 44.

[0090] The device body 10 is also equipped with a first buffer platform 11, a second buffer platform 12, a first flipping machine 13, and a second flipping machine 14.

[0091] like Figure 1 As shown, the first robotic arm 41 is positioned between the oxide layer cleaning device 20 and the particulate matter cleaning device 30. The second robotic arm 42 is positioned at one end of the oxide layer cleaning device 20, and the fourth robotic arm 44 is positioned at the other end of the oxide layer cleaning device 20. Both the oxide layer cleaning device 20 and the first robotic arm 41 are located between the second robotic arm 42 and the fourth robotic arm 44. The third robotic arm 43 is positioned on the side of the particulate matter cleaning device 30 away from the oxide layer cleaning device 20. The first flipping machine 13 is positioned between the first robotic arm 41 and the particulate matter cleaning device 30, and close to the second robotic arm 42. The second flipping machine 14 is positioned between the first robotic arm 41 and the particulate matter cleaning device 30, and close to the fourth robotic arm 44.

[0092] like Figure 1 As shown, the first buffer platform 11 is located between the second flipping machine 14 and the fourth robotic arm 44. The second buffer platform 12 is located at the end of the particulate matter cleaning device 30 away from the fourth robotic arm 44 and close to the second robotic arm 42, and is also close to the first flipping machine 13.

[0093] The first buffer stage 11 is for placing uncleaned substrates, and the second buffer stage 12 is for placing substrates that have been cleaned by the oxide layer cleaning device.

[0094] In addition, multiple loading units 50 are provided on the side of the fourth robotic arm 44 away from the first robotic arm 41.

[0095] During the cleaning process, the substrate is loaded into the machine through the loading unit 50. The fourth robotic arm 44 takes the substrate out of the loading unit 50 and places it into the first buffer stage 11. The first robotic arm 41 transports the substrate from the first buffer stage 11 to the oxide layer cleaning device 20 to clean and remove the oxide layer on the front side of the substrate, while retaining the oxide layer on the back side of the substrate.

[0096] After the substrate in the oxide layer cleaning device 20 is cleaned and placed in a horizontal position, it is removed by the second robotic arm 42 and placed into the first flipping machine 13 to flip it so that the substrate is in an upright position. Then the first flipping machine 13 transfers the substrate to the second buffer stage 12 to wait.

[0097] When all substrates of the same batch are placed on the second buffer platform 12, the third robotic arm 43 transports the substrates to the particulate cleaning device 30 to clean the metal and organic particles transferred to the substrate surface, thereby improving the overall cleanliness of the substrates.

[0098] After the particulate matter cleaning device 30 finishes cleaning, the substrate is transferred to the second flipping machine 14 by the third robotic arm 43 and flipped 90°, so that the substrate changes from an upright posture to a horizontal posture. Finally, the fourth robotic arm 44 loads the substrate into the loading unit 50 to complete the entire operation process.

[0099] The aforementioned substrate cleaning equipment first cleans the oxide layer on the front side of the substrate using an oxide layer cleaning device 20. After cleaning, a particulate cleaning device 30 cleans the metal and organic particles on the substrate surface, improving the overall poor particle quality in the center of the substrate and addressing the ineffective removal of particles adhering to the back oxide and bevel (slanted edge) areas. Through optimization of the cleaning process, based on the substrate's back oxide requirements, only the oxide layer on the front side of the substrate is removed. This effectively removes the front oxide layer, improves the substrate particle size and front-side uniformity, removes particle aggregation in the center of the substrate, enhances cleaning capabilities, and optimizes the substrate surface edges.

[0100] like Figure 1 As shown, in this embodiment, the oxide layer cleaning device 20 includes a first cleaning platform 201, a second cleaning platform 202, a third cleaning platform 203, and a fourth cleaning platform 204 arranged sequentially. The four cleaning platforms are located inside the device body 10.

[0101] Each of the aforementioned cleaning stations can independently clean the front side of the substrate. Each cleaning station is used to sequentially clean the front side of the substrate using HF solution, DIO3 solution, DIW liquid, and nitrogen gas. Therefore, cleaning of the front oxide layers of four substrates can be performed simultaneously. In other alternative embodiments, the number of cleaning stations included in the oxide layer cleaning apparatus 20 can be adjusted based on actual usage requirements.

[0102] In this embodiment, each cleaning station has the same structure; the structure of the first cleaning station 201 will be described as an example. (Combined with...) Figure 2 As shown, the first cleaning station 201 includes a platform 21, a liquid recovery tank 22, a liquid storage container 23, a first pump body 24, a first heater 25, a second heater 26, a first filter 27, a second filter 28, and a third filter 29.

[0103] The platform 21 is rotatable, and the liquid recovery tank 22 is located below the platform 21 to collect the cleaning fluid on the platform 21. The inner cavity of the liquid recovery tank 22 is connected to the inner cavity of the liquid storage container 23 through a third filter 29. The liquid storage container 23 is connected to a supply pipe located above the platform 21 through a first pump body 24. The first pump body 24 transports the cleaning fluid in the liquid storage container 23 to the upper part of the platform 21 through the supply pipe. The platform 21 supports a substrate 100 with its front side facing upwards. As the platform 21 rotates, the cleaning fluid is evenly sprayed onto the front side of the substrate 100 to clean and remove the oxide layer on its front side.

[0104] The liquid supply pipe is equipped with a first heater 25, a second heater 26, a first filter 27, and a second filter 28 arranged sequentially along the fluid flow direction. The first filter 27 filters particles with a particle size of 10 nm, and the second filter 28 filters particles with a particle size of 1 nm. The temperature control range of the first heater 25 and the second heater 26 is 0-80℃.

[0105] The liquid supply pipeline is equipped with a two-stage filtration system and a two-stage heating series system to improve the particle filtration performance and temperature control performance of the cleaning fluid.

[0106] The cleaning solutions used in the oxide layer cleaning device 20 include HF (hydrogen fluoride), DIO3 (ozone-deionized water), and DIW (deionized water). During the cleaning process, HF, DIO3, and DIW are sprayed sequentially onto the front side of the substrate. The HF solution is used to remove the oxide layer from the front side of the substrate, the DIO3 solution is used to clean particles from the front side of the substrate and improve the hydrophilicity of the front side, and the DIW solution is used to rinse the front side of the substrate to reduce particulate residue.

[0107] In this embodiment, multiple liquid storage containers 23 may be provided, or multiple independent chambers may be provided within the liquid storage containers 23 to form multiple independent liquid storage chambers for storing the aforementioned cleaning fluid. The first pump body 24 may be connected to the corresponding liquid storage chambers through pipes, and the opening and closing of the corresponding pipes may be controlled by valves to control the spraying of the corresponding cleaning fluid.

[0108] In addition, the oxide layer cleaning device 20 also includes a venting line (not shown in the figure) for introducing nitrogen gas to dry the cleaned substrate.

[0109] In this embodiment, the HF solution, DIO3 solution, and DIW liquid are all set to room temperature, the concentration of the HF solution is 25% (volume ratio of hydrogen fluoride to water), the concentration of the DIO3 solution is 30 ppm, the nitrogen flow rate is 5 L / min, and the flow rates of the HF solution, DIO3 solution, and DIW liquid are all 1.8 L / min.

[0110] The HF concentration is selected as 25%, and the corrosion rate is above 3000A. It is used to etch the oxide layer while retaining the back oxygen. The tank body adopts a two-stage filtration system and a two-stage heating series system to improve particle filtration and temperature control performance.

[0111] Combination Figure 1 As shown, the particulate cleaning device 30 includes multiple particulate cleaning tanks, with cleaning liquid in at least one particulate cleaning tank used to clean organic particles on the surface of the substrate, and cleaning liquid in at least one particulate cleaning tank used to clean metal ions on the surface of the substrate.

[0112] Combination Figure 3 The diagram shown is a schematic of the cleaning tank.

[0113] The cleaning tank includes a tank body 301, a second pump body 302, a concentration meter 303, a third heater 304, a fourth heater 305, a third filter 306, a fourth filter 307, and a circulation tank 308.

[0114] A cleaning solution is added to tank 301, which is used to immerse the substrate for cleaning. A circulation tank 308 is located on the outer periphery of the opening at the top of tank 301, allowing the cleaning solution in tank 301 to overflow into circulation tank 308 through the opening.

[0115] The bottom of the inner cavity of the circulation tank 308 is connected to the inner cavity of the tank body 301 through a pipeline. Along the flow direction of the cleaning liquid, the pipeline is provided with a second pump body 302, a concentration meter 303, a third heater 304, a fourth heater 305, a third filter 306 and a fourth filter 307.

[0116] The second pump body 302 forces the cleaning fluid in the circulation tank 308 to circulate into the tank 301, thus achieving a good cleaning effect on the substrate immersed in it.

[0117] The concentration meter 303 is used to detect the concentration of the cleaning fluid in the tube. In addition, the tank 301 is also connected to an external liquid supply device. When the concentration of the cleaning fluid detected by the concentration meter 303 is lower than the set range, fresh cleaning fluid is supplied to the tank 301 through the external liquid supply device.

[0118] The third filter 306 filters particles of 10nm, and the fourth filter 307 filters particles of 1nm. The temperature control range of the third heater 304 and the fourth heater 305 is 0-80℃.

[0119] The liquid supply pipeline is equipped with a two-stage filtration system and a two-stage heating series system to improve the particle filtration performance and temperature control performance of the cleaning fluid.

[0120] For further details, please refer to... Figure 1 As shown, the particle cleaning tank includes a first particle cleaning tank 31, a second particle cleaning tank 32, and a third particle cleaning tank 33. The first particle cleaning tank 31 is filled with DIO3 solution, the second particle cleaning tank 32 is filled with SC1 solution, and the third particle cleaning tank 33 is filled with SC2 solution. The substrate transfer device 40 sequentially transports the substrate to the first particle cleaning tank 31, the second particle cleaning tank 32, and the third particle cleaning tank 33 for cleaning.

[0121] The DIO3 solution, primarily composed of ozone and deionized water, reduces the contact angle of semiconductor surfaces, making the substrate surface more hydrophilic. Furthermore, combining it with SC1 solution significantly improves particle removal efficiency from the substrate surface and reduces the required cleaning time.

[0122] The SC1 solution consists of ammonia (NH4OH), hydrogen peroxide (H2O2), and water (H2O) in a typical ratio of 1:1:5. As an alkaline solution with a high pH, ​​SC1 provides a synergistic effect of oxidation and corrosion. SC1 oxidizes and corrodes the substrate surface. H2O2 oxidizes the natural oxide film (SiO2) on the substrate surface into a denser oxide layer, while simultaneously oxidizing organic matter and metallic contaminants. NH4OH corrodes the oxide layer and elemental silicon, causing particles to lose support and detach. The alkaline environment of the SC1 solution imparts a negative charge to both the substrate and particle surfaces, generating electrostatic repulsion and preventing particle re-adsorption. The main contaminants cleaned with SC1 solution are particulate matter, organic matter, and some metallic impurities (such as Al and Fe).

[0123] SC2 solution is composed of hydrochloric acid (HCl), hydrogen peroxide (H2O2), and water (H2O), typically in a ratio of 1:1:5 to 10. SC2 solution is acidic with a low pH, providing both acidic dissolution and oxidative complexation. SC2 solution can achieve both acidic dissolution and oxidative complexation; HCl provides H2O. + and Cl - It reacts with metal ions to form soluble chlorides; H2O2 oxidizes metal pollutants to higher oxidation states, enhancing their reaction with Cl-. -The complexing ability of SC2 solution forms stable, soluble complexes. The low pH environment of SC2 solution inhibits particle adsorption. Under acidic conditions (pH 3-5.6), the substrate surface is positively charged, generating electrostatic repulsion with similarly positively charged metal ions, reducing metal re-adsorption. The main contaminants cleaned with SC2 solution are metal ions (such as Na+). + Fe 2+ Mg 2+ wait).

[0124] In the above cleaning process, the hydrophilicity of the substrate surface is first increased using a DIO3 solution, followed by cleaning with an SC1 solution to remove particles and organic matter, and then cleaning with an SC2 solution to remove metal contaminants. The alkaline environment of SC1 readily adsorbs metals, while the acidic environment of SC2 effectively removes metals; the combination of the two achieves a comprehensive cleaning effect.

[0125] Furthermore, the particulate cleaning device 30 also includes a drying tank 34, which is used to dry the substrate after it has been cleaned in the particulate cleaning tank. Nitrogen gas is introduced into the drying tank 34 to dry the substrate. The drying tank 34 can be consistent with existing drying structures.

[0126] The particle cleaning tank also includes a rinsing tank 35, which is filled with deionized water (DIW).

[0127] The third robotic arm 43 is used to transfer the substrate to the rinsing tank 35 for cleaning after the second particle cleaning tank 32 has finished cleaning and before the third particle cleaning tank 33 has finished cleaning, and / or to transfer the substrate to the rinsing tank 35 for cleaning after the third particle cleaning tank 33 has finished cleaning.

[0128] Please continue to refer to this. Figure 1 As shown, in this embodiment, one each of the first particle cleaning tank 31, the second particle cleaning tank 32, the third particle cleaning tank 33, and the drying tank 34 are provided. The first particle cleaning tank 31, the second particle cleaning tank 32, the third particle cleaning tank 33, and the drying tank 34 are arranged in the front-to-back direction within the equipment body 10.

[0129] There are two rinsing tanks 35. One rinsing tank 35 is located between the second particle cleaning tank 32 and the third particle cleaning tank 33, and the other rinsing tank 35 is located between the third particle cleaning tank 33 and the drying tank 34.

[0130] The third robotic arm 43 sequentially immerses the substrate in the first particle cleaning tank 31, the second particle cleaning tank 32, the rinsing tank 35, the third particle cleaning tank 33, the rinsing tank 35, and the drying tank 34.

[0131] Therefore, the substrate was cleaned with DIO3 solution, SC1 solution, DIW solution, SC2 solution and DIW solution respectively, and finally dried in drying tank 34.

[0132] In this embodiment, the SC1 solution, SC2 solution, DIO3 solution, and DIW solution are all at room temperature. The concentration of the DIO3 solution is 30 ppm. The concentrations of the SC1 and SC2 solutions are 1:2 (the ratio of chemical solute to water, where the chemical solute in the SC1 solution includes, for example, NH4OH and H2O2, and the chemical solute in the SC2 solution includes, for example, HCl and hydrogen peroxide H2O2). The flow rate is 25 L / min (including the addition and discharge flow rates in the corresponding cleaning tanks), the sound level is 2000 W, and the cleaning time is 300 s.

[0133] Please refer to Figures 4 to 12 The diagram shows the relevant structure of the rotating component, which can be used as part of the third robotic arm 43, for example, as the end effector of the third robotic arm 43.

[0134] Combination Figure 4 and Figure 5 As shown, the rotating assembly includes two moving parts (first moving part 411 and second moving part 412) and a rotating part 413.

[0135] In addition, the rotating assembly also includes a base 414, and the third robotic arm 43 also includes a lifting assembly 415.

[0136] The first moving part 411 and the second moving part 412 are both disposed on the base 414. The lifting assembly 415 is connected to the base 414 to drive the base 414 to rise and fall, and to drive the first moving part 411 and the second moving part 412 to rise and fall synchronously. In addition, the third robotic arm 43 also includes a horizontal movement assembly. The lifting assembly 415 is disposed on the horizontal movement assembly and is driven to move horizontally, so that the entire rotating assembly can move between the various cleaning tanks.

[0137] Combination Figure 4 As shown, the first moving part 411 and the second moving part 412 have a bracket-shaped structure and are arranged symmetrically on the left and right. The upper ends of the first moving part 411 and the second moving part 412 are disposed on the base 414, and the first moving part 411 and the second moving part 412 form an approximately scissor-like clamping structure.

[0138] The first moving part 411 and the second moving part 412 are configured to move relative to each other. Specifically, the lower ends of the first moving part 411 and the second moving part 412 can swing left and right. When the lower ends of the first moving part 411 and the second moving part 412 swing closer to each other, they form a clamping state, which is used to clamp the substrate located between the first moving part 411 and the second moving part 412. When the lower ends of the first moving part 411 and the second moving part 412 swing away from each other, they form an open state, which is used to release the substrate.

[0139] The rotating parts 413 are configured to rotate, and in this embodiment, two rotating parts 413 and two auxiliary wheels 418 are provided. One auxiliary wheel 418 is provided at each of the two inner arms of the first moving part 411, and one rotating part 413 is provided at each of the two inner arms of the second moving part 412. Therefore, when the first moving part 411 and the second moving part 412 are in a clamping state, the two rotating parts 413 and the two auxiliary wheels 418 respectively surround and contact the outer periphery of the substrate to fix the substrate. Because the rotating parts 413 are rotatable, after clamping the substrate, the two rotating parts 413 rotate in the same direction, and the two auxiliary wheels 418 follow suit, thus causing the clamped substrate to rotate.

[0140] In other alternative embodiments, the two auxiliary wheels 418 can be replaced with two rotating parts 413, in which case the substrate is driven to rotate by the synchronous rotation of the four rotating parts 413.

[0141] After the rotating assembly clamps the substrate, it transports the substrate to the top of the corresponding cleaning tank. The rotating assembly then descends, immersing the substrate in the cleaning solution within the tank, while the rotating part 413 drives the substrate to rotate. After cleaning is complete, the rotating assembly rises, transferring the substrate out of the cleaning tank.

[0142] When the substrate is placed in each cleaning tank, it is driven to rotate at a speed of 5 rpm, which makes the removal of particles on the substrate surface obvious and prevents particle deposits from accumulating at the bottom of the tank. At the same time, as the substrate rotates at a low speed, it improves the problem of uneven distribution of the solution concentration at the bottom of the tank and enhances the surface uniformity.

[0143] Combination Figures 6 to 8 As shown, the first moving part 411 and the second moving part 412 have the same structure and are arranged symmetrically.

[0144] In this embodiment, taking the structure of the first moving part 411 as an example, it includes a first rotating shaft 4111, a second rotating shaft 4112, a third rotating shaft 4113, a first chain 4114, a second chain 4115, a rotating part shaft 4116, and an auxiliary wheel shaft 4117.

[0145] The rotating assembly also includes a back plate 416, on which a first rotating shaft 4111 and a third rotating shaft 4113 are rotatably mounted. A base 414 is disposed on the back plate 416, and the first rotating shaft 4111 is located near the base 414 and connected to the drive wheel of the base 414. An auxiliary wheel shaft 4117 is rotatably mounted on the back plate 416 and is used to mount an auxiliary wheel 418. The rotating part shaft 4116 is used to mount the rotating part 413. The base 414 may integrate a drive structure for driving the first rotating shaft 4111 to rotate, such as integrating a motor, so the first rotating shaft 4111 serves as the active rotating shaft. A first chain 4114 meshes with the first rotating shaft 4111 and the third rotating shaft 4113.

[0146] The rotational motion of the first rotating shaft 4111 is transmitted to the third rotating shaft 4113 via the first chain 4114. The first chain 4114, the first rotating shaft 4111, and the third rotating shaft 4113 constitute the upper support arm of the first moving part 411. The second chain 4115 meshes with the third rotating shaft 4113 and the second rotating shaft 4112, and the second chain 4115, the third rotating shaft 4113, and the second rotating shaft 4112 constitute the lower swing arm of the first moving part 411. The third rotating shaft 4113 can be divided in the axial direction, meshing with the first chain 4114 and the second chain 4115 respectively. The second rotating shaft 4112 is mounted on the back plate 416 and can rotate on its own axis and swing about the central axis of the third rotating shaft 4113. Therefore, the lower swing arm formed by the second chain 4115, the third rotating shaft 4113, and the second rotating shaft 4112 can swing about the third rotating shaft 4113.

[0147] In this embodiment, the third rotating shaft 4113 is rotatably mounted on the back plate 416. A groove 417, which is an arc-shaped groove, is provided on the back plate 416 based on the swing trajectory of the second rotating shaft 4112. The groove 417 is located on the back plate 416 and is close to the bottom of the back plate 416. A slider is slidably mounted in the groove 417, and the second rotating shaft 4112 is rotatably mounted on the slider. The slider serves both as a bearing seat for mounting the second rotating shaft 4112 and as a sliding seat within the groove 417 to limit the swing trajectory of the second rotating shaft 4112.

[0148] The base 414 is also used to drive the moving part to swing. For example, another motor is integrated in the base 41, which drives the slider to slide along the slide groove 417 through the structure of the swing arm, crank rocker, etc., thereby driving the lower swing arm composed of the second chain 4115, the third rotating shaft 4113 and the second rotating shaft 4112 to swing.

[0149] Figure 7 The rotating part 413 in the middle is in conjunction with the first moving part 411. Figure 7 The auxiliary wheel 418 is rotatably mounted on the back plate 416, and the auxiliary wheel 418 rotates freely.

[0150] In other alternative embodiments, the auxiliary wheel 418 may also mesh with the first chain 4114 as a rotating part 413.

[0151] Figure 7 The lower rotating part 413 engages with the second chain 4115, and follows the movement of the lower swing arm formed by the second chain 4115, the third rotating shaft 4113, and the second rotating shaft 4112 to maintain engagement with the second chain 4115. Furthermore, as the lower swing arm of the first moving part 411 swings to the right, the lower rotating part 413 moves synchronously to avoid interference between the substrate and the lower rotating part 413 during the clamping area between the first moving part 411 and the second moving part 412. For example, the rotating part shaft 4116 can be mounted on the same slider as the second rotating shaft 4112, and the rotating part 413 can be mounted on the rotating part shaft 4116 to ensure that the rotating part 413 follows the swing arm of the first moving part 411 to maintain its relative position to the second chain 4115.

[0152] The structure of the second motion part 412 is similar to that of the first motion part 411 described above, and will not be repeated here.

[0153] Two moving parts (first moving part 411 and second moving part 412), a rotating part 413, a base 414, a back plate 416, a slide 417, an auxiliary wheel 418, and a slider installed in the slide 417 form a rotating assembly. This rotating assembly, as part of the third robotic arm 43, is mainly used to perform the rotation function of the substrate. The lifting assembly 415 in the third robotic arm 43 is used to perform the lifting function of the substrate, and the horizontal motion assembly in the third robotic arm 43 is used to perform the horizontal transport function of the substrate.

[0154] The aforementioned first moving part 411 and second moving part 412 are constructed using multiple rotating shafts and chains. Two rotating parts 413 are respectively engaged with two chains, driving the rotating parts to rotate in the same direction. In other alternative embodiments, the first moving part 411 can consist of an upper rod and a lower rod, wherein the upper rod is fixed to the back plate 416, and the lower rod is rotatably engaged with the upper rod and can be driven to swing. When the lower rod swings, the rotating assembly can switch between a clamping state and an open state. A rotating part 413 is rotatably mounted on the upper and lower rods respectively. Each of the two rotating parts can be driven by a motor, or one rotating part can act as the driving element, driven by a motor, while the other rotating part can be connected to the driving element via an intermediate transmission structure to achieve driven rotation in the same direction, or the other rotating part can be in a free-rotating state. The structure of the first moving part 411 and the second moving part 412 can be adjusted based on actual usage requirements.

[0155] In this embodiment, two rotating parts 413 are provided; one rotating part 413 follows the movement of the first moving part 411, and the other rotating part 413 follows the movement of the second moving part 412. In other alternative embodiments, the number of rotating parts 413 can be adjusted based on actual usage requirements.

[0156] Combination Figure 9 As shown, in this embodiment, the rotating part 413 has a cylindrical structure, and the axial directions of each rotating part 413 are parallel. The rotating part 413 is configured to rotate around its own central axis, and a plurality of receiving grooves 4131 are arranged along its axial direction on the rotating part 413. The receiving grooves 4131 extend circumferentially around the rotating part 413 to form closed annular grooves, and the receiving grooves 4131 are used to receive the substrate.

[0157] Combination Figure 10 As shown, in order to ensure better engagement between the rotating part 413 and the chain, the chain is also provided with protrusions that engage with the receiving groove 4131 to ensure that the chain power is stably transmitted to the rotating part 413 and to prevent the two from slipping relative to each other.

[0158] Combination Figure 11 and Figure 12 As shown, the rotating part 413 is provided with multiple receiving slots 4131, each receiving slot 4131 can mate with a substrate 100, so each rotating part 413 can mate with multiple substrates. The four rotating parts 413 are of the same specification, and the four positions on the outer periphery of a substrate are respectively received in the receiving slots 4131 of the four rotating parts 413. Thus, the substrate is positioned by being surrounded by the four rotating parts 413. Therefore, each rotating component can simultaneously grasp multiple substrates 100, and the spacing between each substrate is limited by the distance between adjacent receiving slots 4131. Figure 12 The diagram shown is a partially enlarged structural schematic of the receiving groove 4131, whose cross-section is a triangular groove. In other alternative embodiments, the cross-section of the receiving groove 4131 may be a circular arc groove or other shapes.

[0159] Before the rotating assembly picks up the substrates, each substrate is in an upright position, parallel to each other, and stored in its corresponding storage unit. The bottom of the substrate is inserted into the storage unit. It should be ensured that the distance between adjacent receiving slots 4131 is equal to the distance between adjacent substrates at this time. Then, the rotating assembly can clamp the middle position (or the lower middle position) of the substrate to pick up a batch of substrates in the storage unit and transfer them at once.

[0160] Combination Figure 13 The image shows the number of particles on a substrate after cleaning, compared to the number after cleaning with the cleaning equipment described in this embodiment.

[0161] Substrate 1 is cleaned using traditional SC1 and SC2 solutions, substrate 2 is cleaned using traditional HF solution, and substrate 3 is cleaned using the cleaning equipment described in this embodiment.

[0162] The number of particles remaining after cleaning substrate 1 was 50, the number of particles remaining after cleaning substrate 2 was 30, and the number of particles remaining after cleaning substrate 3 was 2. The number of particles remaining on the surface of the substrates after cleaning with the cleaning equipment in this embodiment was significantly reduced.

[0163] This embodiment also provides a substrate cleaning method, including the following steps:

[0164] S1: Clean the oxide layer on the front side of the substrate; specifically, the oxide layer on the front side of the substrate can be cleaned by the oxide layer cleaning device 20 mentioned above. The cleaning process is described in detail in the cleaning equipment section above and will not be repeated here.

[0165] S2: Clean the substrate surface (front and back) to remove metal and organic particles.

[0166] The substrate is changed from a horizontal to an upright position by a substrate transfer device, which then sequentially immerses the substrate in DIO3 solution, SC1 solution and SC2 solution for cleaning.

[0167] The transfer and attitude adjustment of the substrate are performed by the first robotic arm 41, the second robotic arm 42, the third robotic arm 43, the first flipping machine 13, and the second flipping machine 14.

[0168] The substrate is cleaned by sequentially immersing it in DIO3 solution, SC1 solution and SC2 solution using the third robotic arm 43.

[0169] Preferably, the substrate is cleaned with DIW solution after cleaning with SC1 solution and before cleaning with SC2 solution, and then cleaned with DIW solution after cleaning with SC2 solution, and finally dried.

[0170] The above-mentioned cleaning and drying processes are carried out in the first particle cleaning tank 31, the second particle cleaning tank 32, the rinsing tank 35, the third particle cleaning tank 33, the rinsing tank 35, and the drying tank 34 in the cleaning equipment, which will not be described in detail here.

[0171] The above cleaning process first cleans the oxide layer on the front side of the substrate. After cleaning, metal and organic particles on the substrate surface are removed, which improves the overall poor particle quality in the center of the substrate and the ineffective removal of particles adhering to the back oxide and bevel (slanted edge) areas. By optimizing the cleaning process, based on the back oxide requirements of the substrate, only the oxide layer on the front side of the substrate is removed. This effectively removes the front oxide layer, improves the particle size and uniformity of the front side of the substrate, removes particle aggregation in the center of the substrate, enhances cleaning ability, and optimizes the edges of the substrate surface.

[0172] In the above cleaning process, the hydrophilicity of the substrate surface is first increased using a DIO3 solution, followed by cleaning with an SC1 solution to remove particles and organic matter, and then cleaning with an SC2 solution to remove metal contaminants. The alkaline environment of SC1 readily adsorbs metals, while the acidic environment of SC2 effectively removes metals; the combination of the two achieves a comprehensive cleaning effect.

[0173] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0174] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A substrate cleaning device, characterized in that, include: Equipment body; An oxide layer cleaning device is installed inside the device body, and the oxide layer cleaning device is used to clean the oxide layer on the front side of the substrate; A particulate cleaning device is installed inside the device body. The particulate cleaning device is used to clean metal particles and organic particles on the surface of the substrate. A substrate transfer device that is movably installed within the device body and located near the oxide layer cleaning device and the particulate matter cleaning device.

2. The substrate cleaning equipment as described in claim 1, characterized in that, The oxide layer cleaning device includes at least one cleaning station; The cleaning station described above uses HF solution, DIO3 solution, DIW liquid, and nitrogen to clean the front side of the substrate.

3. The substrate cleaning equipment as described in claim 2, characterized in that, The concentration of the DIO3 solution is 30 ppm, the concentration of the HF solution is 25%, the nitrogen flow rate is 5 L / min, and the flow rates of the DIO3 solution, HF solution, and DIW liquid are all 1.8 L / min.

4. The substrate cleaning equipment as described in claim 1, characterized in that, The particulate matter cleaning device includes a first particulate cleaning tank, a second particulate cleaning tank and a third particulate cleaning tank arranged in sequence. The first particle cleaning tank contains a DIO3 solution, the second particle cleaning tank contains an SC1 solution, and the third particle cleaning tank contains an SC2 solution.

5. The substrate cleaning equipment as described in claim 4, characterized in that, The particulate matter cleaning device further includes: A drying tank is located on the side of the third particle cleaning tank away from the second particle cleaning tank; A rinsing tank is provided with deionized water and is located between the second particle cleaning tank and the third particle cleaning tank and / or between the third particle cleaning tank and the drying tank.

6. The substrate cleaning equipment as described in claim 4, characterized in that, The concentration of the DIO3 solution is 30 ppm, and the concentrations of the SC1 and SC2 solutions are both 1:2, the flow rates are both 25 L / min, and the megahertz waves are both 2000 W.

7. The substrate cleaning equipment as described in any one of claims 1 to 6, characterized in that, The particulate matter cleaning device also includes a rotating component; The rotating component includes: Back panel; Two movable parts, which are arranged opposite to each other and rotatably mounted on the back plate; and A rotating part connected to the moving part and rotatably mounted on the back plate has a plurality of receiving grooves for accommodating the substrate. By rotating the two moving parts, the two moving parts drive the corresponding rotating parts to move closer to each other, so that the substrate is inserted into the receiving groove and clamped between the two moving parts. Then, rotating the rotating part drives the substrate to rotate along the axial direction of the substrate.

8. The substrate cleaning equipment as described in claim 7, characterized in that, The rotating assembly also includes a base disposed on the top of the back plate for driving the moving part to rotate, a groove formed on the back plate and near the bottom of the back plate, and a slider slidably disposed in the groove. One end of the moving part is mounted on the base, and the other end is mounted on the slider; The rotating part is rotatably mounted on the slider; The base drives the moving part to swing, and the slider moves along the groove, causing the two rotating parts to move closer or further apart.

9. The substrate cleaning equipment as described in claim 8, characterized in that, The moving part includes: The first rotating shaft is driven and connected to the base; The second rotating shaft mounted on the slider is rotatably mounted; and A chain is meshed between the first rotating shaft and the second rotating shaft. The rotating part meshes with the chain and drives the first rotating shaft to rotate through the base, so that the chain drives the second rotating shaft and the rotating part to rotate.

10. The substrate cleaning equipment as described in claim 9, characterized in that, The moving part also includes: A third rotating shaft is rotatably mounted on the back plate and located between the first rotating shaft and the second rotating shaft; The chain includes a first chain and a second chain. The first chain meshes with the first rotating shaft and the third rotating shaft, the second chain meshes with the second rotating shaft and the third rotating shaft, and the rotating part meshes with the second chain.

11. The substrate cleaning equipment as described in claim 1, characterized in that, The substrate cleaning equipment also includes: A heater connected to the oxide layer cleaning device and / or the particulate matter cleaning device is used to heat the cleaning solution in the oxide layer cleaning device and / or the particulate matter cleaning device. and / or; A filter connected to the oxide layer cleaning device and / or the particulate matter cleaning device is used to filter the cleaning solution in the oxide layer cleaning device and / or the particulate matter cleaning device.

12. The substrate cleaning equipment as described in claim 1, characterized in that, The substrate cleaning equipment also includes: A first buffer stage is disposed within the device body and is used to place an uncleaned substrate; A second buffer stage is disposed within the device body and is used to place the substrate cleaned by the oxide layer cleaning device; A first flipping machine, disposed within the device body and near the second buffer platform, flips a horizontal substrate into a vertical position; and A second flipping machine is installed inside the device body and close to the particulate matter cleaning device to flip the vertical substrate into a horizontal position. The substrate is transported sequentially from the first buffer stage to the oxide layer cleaning device, the first flipping machine, the second buffer stage, the particulate matter cleaning device, and the second flipping machine via the substrate transfer device.

13. A substrate cleaning method, characterized in that, Includes the following steps: S1: Clean the oxide layer on the front side of the substrate; S2: Clean the surface of the substrate to remove metal and organic particles.

14. The substrate cleaning method as described in claim 13, characterized in that, The cleaning process also includes: The front oxide layer of the substrate was cleaned sequentially using HF solution, DIO3 solution, DIW cleaning, and nitrogen gas. The concentration of the DIO3 solution is 30 ppm, the concentration of the HF solution is 25%, the nitrogen flow rate is 5 L / min, and the flow rates of the DIO3 solution, HF solution, and DIW liquid are all 1.8 L / min.

15. The substrate cleaning method as described in claim 13, characterized in that, The cleaning process for metal and organic particles on the substrate surface also includes: The substrate was sequentially immersed in DIO3 solution, SC1 solution and SC2 solution for cleaning; The concentration of the DIO3 solution is 30 ppm, and the concentrations of the SC1 and SC2 solutions are both 1:2, the flow rates are both 25 L / min, the megahertz waves are both 2000 W, and the cleaning time is both 300 s.

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