Member for semiconductor manufacturing apparatus

Abstract

A wafer placement table 10 is provided with: a ceramic plate 20, the upper surface of which has a wafer placement surface 20a; an electrostatic electrode (22) implanted in the ceramic plate (20); an electrode extraction part (23) which is implanted in the ceramic plate (20) and is provided downward from the electrostatic electrode (22); a terminal hole (24) provided from the lower surface of the ceramic plate (20) to the electrode extraction section (23); a terminal (50) inserted into the terminal hole (24); and a conductive joining part 55 that is provided between the terminal 50 and the electrode extraction part 23 and joins the terminal 50 and the electrode extraction part 23, the terminal hole 24 having a terminal hole diameter-reducing surface 24a that reduces in diameter toward the hole bottom, and the terminal hole diameter-reducing surface 24a is provided so as to intersect the side surface 23a of the electrode extraction part 23.

Description

Technical Field This invention relates to components for semiconductor manufacturing apparatus. Background Technology In semiconductor manufacturing apparatuses, components such as ceramic heaters for heating wafers and electrostatic chucks for holding and holding wafers are employed. Patent Document 1 discloses a structure for such semiconductor manufacturing apparatus components in which a power supply terminal is bonded to an electrode embedded in a ceramic plate. Specifically, an electrode extraction portion, positioned downwards from the electrode, is embedded in the ceramic plate along with the electrode. A terminal hole is provided such that it extends from the lower surface of the ceramic plate to the electrode extraction portion. The terminal is inserted into this terminal hole and bonded to the electrode via the electrode extraction portion. The electrode extraction portion is truncated cone-shaped, with a side inclination angle of 40° or less. The terminal hole is configured such that its flat bottom surface intersects with the side surface of the electrode extraction portion. Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2008-135737 Summary of the Invention However, in the component for a semiconductor manufacturing apparatus of Patent Document 1, the ceramic plate between the inclined side of the electrode extraction part and the flat bottom surface of the terminal hole is relatively thin, and as a result, this part sometimes cracks or peels due to the load during processing or the thermal stress during use, and is damaged. The present invention was implemented to solve the above-mentioned problems, and its main objective is to suppress the breakage of components used in semiconductor manufacturing apparatus.

[0001] The semiconductor manufacturing apparatus component of the present invention includes: A ceramic plate having a wafer mounting surface on its upper surface; An electrode, which is implanted in the ceramic plate; An electrode removal section is implanted in the ceramic plate and is positioned downwards from the electrode. Terminal hole, configured to reach the electrode extraction portion from the lower surface of the ceramic plate; Terminal, which is inserted into the terminal hole; and A conductive joint is provided between the terminal and the electrode extraction portion to connect the terminal and the electrode extraction portion. The terminal hole has a terminal hole diameter reduction surface that narrows towards the bottom of the terminal hole, and the terminal hole diameter reduction surface is configured to intersect with the side of the electrode extraction portion. In this component for a semiconductor manufacturing apparatus, the terminal hole has a terminal hole tapering surface that narrows towards the bottom of the hole, and this tapering surface is configured to intersect with the side surface of the electrode extraction portion. Accordingly, compared to a case where, for example, the flat bottom surface of the terminal hole intersects with the inclined side surface of the electrode extraction portion, the ceramic plate between the electrode extraction portion and the terminal hole can be thickened corresponding to the degree of inclination of the terminal hole tapering surface. Therefore, the situation where a thinner portion of the ceramic plate is formed is suppressed, thereby preventing breakage of the component for the semiconductor manufacturing apparatus. It should be noted that in this specification, terms such as up and down, left and right, and front and back are sometimes used to describe the present invention; however, up and down, left and right, and front and back are merely relative positional relationships. Therefore, when the orientation of the components in a semiconductor manufacturing apparatus is changed, sometimes up and down becomes left and right, or left and right becomes up and down; however, such situations are also included within the scope of the present invention.

[0002] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described above [1]), the side of the electrode extraction portion can be tapered downwards. This ensures the contact area between the electrode and the electrode extraction portion, and reduces the volume of the electrode extraction portion. Reducing the volume of the electrode extraction portion suppresses cracking or peeling of the ceramic plate caused by the thermal expansion difference between the ceramic plate and the electrode extraction portion.

[0003] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [1] or [2] above), at the intersection between the terminal hole reduction surface and the side of the electrode extraction portion, the angle between the virtual surface parallel to the electrode and the terminal hole reduction surface can be 20° or more and 75° or less. If the angle is 20° or more, it is not easy to form a thinner portion in the ceramic plate, thus further suppressing cracking or peeling of the ceramic plate. If the angle is 75° or less, even if the bottom of the terminal hole is small-diameter according to, for example, the size of the electrode extraction portion, the diameter of the terminal hole can be relatively large. Accordingly, the terminal diameter of the terminal inserted into the terminal hole can be increased, thus ensuring good conductivity.

[0004] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [3] above), the intersection angle between the terminal hole reducing surface and the side surface of the electrode extraction portion can be 40° or more and 120° or less. If the intersection angle is 40° or more, it is not easy to form a thinner portion in the ceramic plate, thus further suppressing cracking or peeling of the ceramic plate. If the intersection angle is 120° or less, even if the bottom of the terminal hole is small-diameter according to, for example, the size of the electrode extraction portion, the diameter of the terminal hole can be relatively large. Accordingly, the terminal diameter of the terminal inserted into the terminal hole can be increased, thus ensuring good conductivity.

[0005] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [4] above), the side surface of the electrode extraction portion may be tapered downwards, and the inclination angle of the side surface of the electrode extraction portion is less than the intersection angle between the terminal hole tapering surface and the side surface of the electrode extraction portion. The smaller the inclination angle of the side surface of the electrode extraction portion, the smaller the volume of the electrode extraction portion can be, and therefore, it is possible to further suppress cracking or peeling of the ceramic plate caused by the thermal expansion difference between the ceramic plate and the electrode extraction portion.

[0006] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [5] above), the terminal hole reduced diameter surface can enter the electrode extraction portion. Accordingly, the contact area between the electrode extraction portion and the conductive joint portion can be easily ensured, thereby improving the conductivity.

[0007] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [6] above), the terminal hole diameter reduction surface may be a C-surface or an R-surface disposed between the bottom surface and the side surface of the terminal hole.

[0008] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [7] above), the terminal hole reduced diameter surface can be a C-surface provided between the bottom surface and the side surface of the terminal hole, the terminal has a terminal reduced diameter surface that is reduced in diameter toward the front end of the terminal, the terminal reduced diameter surface is a C-surface provided between the front end surface and the side surface of the terminal, and the terminal hole reduced diameter surface and the terminal reduced diameter surface are joined by the conductive joint. Accordingly, the two can be joined in the form of a C-surface terminal hole reduced diameter surface receiving a C-surface terminal reduced diameter surface, so that the pressure from the terminal is concentrated on the bottom surface of the terminal hole, thereby suppressing the cracking or peeling of the ceramic plate at the periphery of the bottom surface of the terminal hole. It should be noted that, from the viewpoint of distributing the pressing pressure from the terminal equally, the size of the C-surface of the terminal hole reduction surface and the size of the C-surface of the terminal reduction surface are preferably the same. In addition, the inclination of the C-surface of the terminal hole reduction surface and the inclination of the C-surface of the terminal reduction surface are preferably the same. Attached Figure Description Figure 1 This is a cross-sectional view showing the general configuration of the wafer stage 10. Figure 2 yes Figure 1 A magnified view of a portion of the image. Figure 3 This is an explanatory diagram of the process of joining the terminal 50 and the electrode removal part 23. Figure 4 This is a partial enlarged view of another example, the wafer stage 10B. Figure 5 This is a partial enlarged view of another example of a wafer stage 10C. Figure 6 This is a partial enlarged view of another example of a wafer stage 10D. Figure 7 This is a partial enlarged view of another example, the wafer stage 10E. Figure 8 This is a partial enlarged view of the wafer stage 110 in the comparison mode. Detailed Implementation Figure 1 This is a cross-sectional view showing the general configuration of the wafer stage 10 of this embodiment (a cross-sectional view of the wafer stage 10 cut along a plane including the central axis of the wafer stage 10). Figure 2 yes Figure 1 A magnified view of a portion of the image (enlarged view within the box indicated by a double-dotted line). It should be noted that in the following description, "up and down," "left and right," and "front and back" are sometimes used; however, these are merely relative positional relationships. The wafer stage 10 is an example of a component in a semiconductor manufacturing apparatus used for processing wafers W. For example... Figure 1As shown, the wafer stage 10 includes: a ceramic plate 20, a cooling plate 30, a bonding layer 40, and terminals 50. The ceramic plate 20 is a circular plate-shaped component having a wafer mounting surface 20a on its upper surface. The ceramic plate 20 is formed of a ceramic-containing material. The ceramic-containing material is a material whose main component is ceramic, and in addition to ceramic, it may also contain components derived from sintering aids (such as rare earth elements) or unavoidable components. The main component refers to a component that accounts for 50% or more by mass in the whole. Examples of ceramics include alumina and aluminum nitride. An electrostatic electrode 22 is embedded in a ceramic plate 20. The electrostatic electrode 22 is formed of a material containing metals such as W, Mo, WC, and MoC. Preferably, the metal used for the electrostatic electrode 22 has a coefficient of thermal expansion close to that of the ceramic plate 20. To make the coefficient of thermal expansion of the electrostatic electrode 22 close to that of the ceramic plate 20, the electrostatic electrode 22 may contain the ceramic contained in the ceramic plate 20. The electrostatic electrode 22 is a unipolar electrostatic electrode in the shape of a disc or a mesh. The layer in the ceramic plate 20 above the electrostatic electrode 22 functions as a dielectric layer. A DC power supply 62 for electrostatic adsorption is connected to the electrostatic electrode 22 via a terminal 50. The cooling plate 30 is a circular plate-shaped component with a refrigerant flow path 32 inside for refrigerant circulation. The refrigerant flow path 32 is formed in a single stroke from one end to the other, covering the entire surface of the ceramic plate 20 when viewed from above. One end and the other end of the refrigerant flow path 32 are connected to a refrigerant circulation pump (not shown) that has the function of regulating the refrigerant temperature. The cooling plate 30 is made of a conductive material containing, for example, a metal. Examples of conductive materials include composite materials and metals. Examples of composite materials include metal composites (metal matrix composites (MMC)). Examples of MMCs include materials containing Si, SiC, and Ti, or materials obtained by impregnating Al and / or Si in a porous SiC body. The material containing Si, SiC, and Ti is called SiSiCTi, the material obtained by impregnating Al in a porous SiC body is called AlSiC, and the material obtained by impregnating Si in a porous SiC body is called SiSiC. Examples of metals include Al, Ti, Mo, or alloys thereof. The conductive material used for the cooling plate 30 is preferably a material whose coefficient of thermal expansion is close to that of the ceramic plate 20. The bonding layer 40 joins the lower surface of the ceramic plate 20 and the upper surface of the cooling plate 30. The bonding layer 40 can be a metal bonding layer formed from, for example, solder or brazing filler metal. The metal bonding layer can be formed using, for example, TCB (Thermal Compression Bonding). TCB refers to a known method of bonding two components by sandwiching a metal bonding material between them and pressing them together at a temperature below the solidus temperature of the metal bonding material. An organic adhesive layer can be used instead of a metal bonding layer as the bonding layer 40. Terminal 50 is a metal component that supplies power to the electrostatic electrode 22. Terminal 50 is, for example, a metal rod. The metal used for terminal 50 is, for example, W, Mo, Ni, etc., preferably one whose coefficient of thermal expansion is close to that of the ceramic plate 20. Terminal 50 is inserted from the lower surface side of the cooling plate 30 through a cooling plate through-hole 34 extending vertically through the cooling plate 30 and a bonding layer through-hole 44 extending vertically through the bonding layer 40 into the terminal hole 24 provided in the ceramic plate 20. Terminal 50 is electrically connected to the electrostatic electrode 22. use Figure 2 The connection structure between terminal 50 and electrostatic electrode 22 will be described. Terminal 50 is inserted into terminal hole 24 with clearance by passing through the interior of insulating tube 36 arranged in through hole 34 of cooling plate and through hole 44 of bonding layer. Terminal 50 is electrically connected to electrode extraction part 23 attached to electrostatic electrode 22 by means of conductive joint 55. Conductive joint 55 may be a metal bonding layer formed of solder or metal brazing filler metal. The electrode extraction section 23 is a circular plate-shaped component embedded in the ceramic plate 20 and disposed downwards from the electrostatic electrode 22. The electrode extraction section 23 is formed of a material containing metals such as W, Mo, WC, and MoC. Preferably, the metal used for the electrode extraction section 23 has a coefficient of thermal expansion close to that of the ceramic plate 20. To make the coefficient of thermal expansion of the electrode extraction section 23 close to that of the ceramic plate 20, the electrode extraction section 23 may contain the ceramic contained in the ceramic plate 20. The electrode extraction section 23 may be formed of a material with the same composition as the electrostatic electrode 22. The electrode extraction section 23 is frustum-shaped, with its side surface 23a tapering downwards. The electrode extraction section 23 is exposed on the bottom surface 24b of the terminal hole 24. The terminal hole 24 is a cylindrical hole, configured to reach the electrode extraction portion 23 from the lower surface of the ceramic plate 20. The terminal hole 24 has a terminal hole diameter-reducing surface 24a that narrows towards the bottom of the hole. The terminal hole diameter-reducing surface 24a is disposed between the bottom surface 24b and the side surface 24c of the terminal hole 24, and has a C-shaped (conical) surface with a C-shaped chamfer at the edge of the boundary between the bottom surface 24b and the side surface 24c of the terminal hole 24. The terminal hole reduction surface 24 intersects the side surface 23a of the electrode extraction portion 23 at the intersection 25. Therefore, damage to the wafer stage 10 can be suppressed. This will be explained below. Figure 8 This is a partial enlarged view of a wafer stage 110 in a comparative manner (the prior art method disclosed in Patent Document 1). In the wafer stage 110, a terminal 150 is electrically connected to an electrode extraction portion 123 via a conductive connection 155, and the electrode extraction portion 123 is embedded in a ceramic plate 120 together with an electrostatic electrode 122. The electrode extraction portion 123 is frustoconical in shape, with its side surface 123a tapering downwards. The electrode extraction portion 123 is exposed at the bottom surface 124b of a terminal hole 124. The terminal hole 124 is a cylindrical hole configured to reach the electrode extraction portion 123 from the lower surface of the ceramic plate 120. In this wafer stage 110, the bottom surface 124b of the terminal hole 124 is flat, and the bottom surface 124b of the terminal hole 124 intersects with the side surface 123a of the electrode extraction portion 123. Therefore, the ceramic plate 120 between the inclined side surface 123a of the electrode extraction portion 123 and the flat bottom surface 124b of the terminal hole 124 has a relatively thin wall thickness. Furthermore, this portion may sometimes crack or peel due to loads such as the opening of the terminal hole 124 or the engagement of the electrostatic electrode 122 with the terminal 150, resulting in damage. In contrast, in the wafer stage 10 of this embodiment, the wall thickness of the ceramic plate 20 between the electrode extraction portion 23 and the terminal hole 24 can be increased according to the degree of inclination of the terminal hole reduction surface 24a, for example, the angle α described later. Therefore, the situation where a thinner portion of the ceramic plate 20 is formed is suppressed, thereby preventing damage to the wafer stage 10. At the intersection 25 between the terminal hole narrowing surface 24a and the side surface 23a of the electrode extraction portion 23, the angle α formed by the virtual surface P parallel to the electrostatic electrode 22 and the terminal hole narrowing surface 24a is preferably, for example, 20° or more and 75° or less. Furthermore, the intersection angle β between the terminal hole narrowing surface 24a and the side surface 23a of the electrode extraction portion 23 is preferably, for example, 40° or more and 120° or less. Additionally, the tilt angle γ of the side surface 23a of the electrode extraction portion 23 is preferably less than the intersection angle β between the terminal hole narrowing surface 24a and the side surface 23a of the electrode extraction portion 23. Regarding angles α and β, when the terminal hole narrowing surface 24a is a curved surface, they can be solved using the tangent of the terminal hole narrowing surface 24a at the intersection 25; when the side surface 23a of the electrode extraction portion 23 is a curved surface, they can be solved using the tangent of the side surface 23a of the electrode extraction portion 23 at the intersection 25. Regarding the angle γ, when the side surface 23a of the electrode extraction part 23 is a curved surface, it can be solved by using the tangent of the side surface 23a of the electrode extraction part 23 at the intersection of the lower surface of the electrostatic electrode 22 and the side surface 23a of the electrode extraction part 23. The terminal hole narrowing surface 24a is configured to enter the electrode extraction portion 23. Therefore, the electrode extraction portion 23 is exposed not only on the bottom surface 24b of the terminal hole 24, but also on a portion of the terminal hole narrowing surface 24a. Terminal 50 has a terminal tapered surface 50a that tapers towards the front end. The terminal tapered surface 50a is disposed between the front end surface 50b and the side surface 50c of terminal 50, and has a C-shaped (conical) surface with a C-beveled edge at the boundary between the front end surface 50b and the side surface 50c. A conductive joint 55 is disposed not only between the bottom surface 24b of terminal hole 24 and the front end surface 50b of terminal 50, but also between the terminal hole tapered surface 24a and the terminal tapered surface 50a, and the terminal hole tapered surface 24a and the terminal tapered surface 50a are joined by the conductive joint 55. Accordingly, terminal 50 is joined with the electrode extraction portion 23 exposed on the bottom surface 24b and the terminal hole tapered surface 24a of terminal hole 24, and also with the ceramic plate 20. Next, an example of using the wafer stage 10 will be described. First, the wafer stage 10 is placed in a vacuum chamber (not shown), and the wafer W is placed on the wafer placement surface 20a of the wafer stage 10. Then, a voltage is applied to the electrostatic electrode 22 from the DC power supply 62 via the terminal 50. As a result, the wafer W is attracted and fixed to the wafer placement surface 20a. Then, the vacuum chamber is set to a vacuum atmosphere or a reduced pressure atmosphere, and the wafer W is processed in the vacuum chamber. For example, when processing the wafer W using plasma, an upper electrode equipped with a spray head is arranged at the top of the vacuum chamber, and while supplying reactive gas from the spray head toward the space between the wafer W and the upper electrode, a high-frequency voltage is applied between the upper electrode and the cooling plate 30 to generate plasma. After the processing of the wafer W is completed, the voltage applied to the electrostatic electrode 22 is released. As a result, the wafer W is released from its attraction and fixation on the wafer placement surface 20a. It should be noted that when it is necessary to lower the temperature of the wafer W, a coolant is circulated in the coolant flow path 32. Next, adopt Figure 3 The process of bonding the terminal 50 and the electrostatic electrode 22 in particular will be described in the manufacturing method of the wafer stage 10. Figure 3 This is an explanatory diagram of the process. First, fabrication: a ceramic plate 20 with an implanted electrostatic electrode 22 and a circular plate component 23z attached to the electrostatic electrode 22. Figure 3(A) The circular plate component 23z is a component that becomes the electrode extraction part 23 through subsequent hole processing. The circular plate component 23z is a component with a spherical cap shape or frustum shape that narrows as it moves away from the electrostatic electrode 22. For example, the ceramic plate 20 can be manufactured as follows: First, two circular plate molded bodies of ceramic powder are manufactured. Next, on the upper surface of the first circular plate molded body, a printed electrode of the same shape as the electrostatic electrode 22 is printed in a concentric circle with the circular plate molded body. A printed electrode of the same shape as the circular plate component 23z is printed at a predetermined position on the upper surface of the printed electrode. Furthermore, a second circular plate molded body is stacked on the printed electrode surface of the first circular plate molded body to form a laminate. The laminate is hot-pressed and fired to obtain the ceramic plate 20. It should be noted that... Figure 3 (A)~ Figure 3 In (D), the surface of the wafer placement surface 20a of the ceramic plate 20 faces downward. Next, a terminal hole 24 is formed, extending from one surface of the ceramic plate 20 to the electrode extraction section 23. Figure 3 (B) The terminal hole 24 has a terminal hole reduction surface 24a between the bottom surface 24b and the side surface 24c. Furthermore, the terminal hole 24 is formed such that a portion of the bottom surface 24b and the terminal hole reduction surface 24a enter the circular plate member 23z, so that the electrode extraction portion 23 is exposed on a portion of the bottom surface 24b and the terminal hole reduction surface 24a of the terminal hole 24. The terminal hole 24 can be formed using known hole-opening processes such as drilling or laser processing. Next, a conductive bonding material 55z is disposed at the bottom of the terminal hole 24. Figure 3 (C)). The bonding material 55z is: the material that subsequently becomes the conductive bonding portion 55, for example, it can be a metal sheet formed from solder or metal brazing filler metal. Next, a terminal 50 is disposed on the bonding material 55z, and the bonding material 55z is clamped in using the terminal hole 24 and the terminal 50. In this state, when treated at a temperature above the melting point of the bonding material 55z, the bonding material 55z melts and spreads wetly between the terminal hole 24 and the terminal 50. When the bonding material 55z solidifies in this state, the electrode extraction portion 23 exposed in the terminal hole 24 and the terminal 50 are joined by the conductive bonding portion 55. Figure 3 (D) Accordingly, terminal 50 and electrostatic electrode 22 are electrically connected. In the wafer stage 10 described above, the terminal hole 24 has a terminal hole diameter-reducing surface 24a that narrows towards the bottom of the hole, and the terminal hole diameter-reducing surface 24a is configured to intersect with the side surface 23a of the electrode extraction portion 23. Therefore, the situation where a thinner portion of the ceramic plate 20 is formed is suppressed, thereby suppressing the breakage of the wafer stage 10. Furthermore, the side surface 23a of the electrode extraction portion 23 tapers downwards. This ensures a sufficient contact area between the electrostatic electrode 22 and the electrode extraction portion 23, and also reduces the size of the electrode extraction portion 23. Reducing the size of the electrode extraction portion 23 helps to suppress cracking or peeling of the ceramic plate 20 caused by the difference in thermal expansion between the ceramic plate 20 and the electrode extraction portion 23. Furthermore, at the intersection 25 between the terminal hole narrowing surface 24a and the side surface 23a of the electrode extraction portion 23, the angle α formed by the virtual surface P parallel to the electrostatic electrode 22 and the terminal hole narrowing surface 24a can be 20° or more and 75° or less. If the angle α is 20° or more, it is less likely to form a thinner portion in the ceramic plate 20, thus further suppressing cracking or peeling of the ceramic plate 20. If the angle α is 75° or less, even if the bottom of the terminal hole 24 is made small-diameter according to, for example, the size of the electrode extraction portion 23, the diameter of the terminal hole 24 can be relatively large. Accordingly, the terminal diameter of the terminal 50 inserted into the terminal hole 24 can be increased, thus ensuring good conductivity. Furthermore, the intersection angle β between the terminal hole reduced diameter surface 24a and the side surface 23a of the electrode extraction portion 23 can be 40° or more and 120° or less. If the intersection angle β is 40° or more, it is less likely to form a thinner portion in the ceramic plate 20, thus further suppressing cracking or peeling of the ceramic plate 20. If the intersection angle is 120° or less, even if the bottom diameter of the terminal hole 24 is small according to, for example, the size of the electrode extraction portion 23, the diameter of the terminal hole 24 can be relatively large. Accordingly, the terminal diameter of the terminal 50 inserted into the terminal hole 24 can be increased, thus ensuring good conductivity. Furthermore, the inclination angle γ of the side surface 23a of the electrode extraction part 23 can be less than the intersection angle β between the terminal hole diameter reduction surface 24a and the side surface 23a of the electrode extraction part 23. The smaller the inclination angle γ of the side surface 23a of the electrode extraction part 23, the smaller the volume of the electrode extraction part 23 can be. Therefore, it is possible to further suppress cracking or peeling of the ceramic plate 20 caused by the thermal expansion difference between the ceramic plate 20 and the electrode extraction part 23. Furthermore, the terminal hole reduced diameter surface 23a enters the electrode extraction portion 23. This easily ensures the contact area between the electrode extraction portion 23 and the conductive joint portion 55, thereby improving current conductivity. Furthermore, the terminal hole reduced diameter surface 24a is a C-surface provided between the bottom surface 24b and the side surface 24c of the terminal hole 24. The terminal 50 has a terminal reduced diameter surface 50a that is reduced in diameter towards the front end of the terminal 50. The terminal reduced diameter surface 50a is a C-surface provided between the front end surface 50b and the side surface 50c of the terminal 50. The terminal hole reduced diameter surface 24a and the terminal reduced diameter surface 50a are joined by a conductive joint 55. Accordingly, the two can be joined in such a way that the C-surface terminal hole reduced diameter surface 24a receives the C-surface terminal reduced diameter surface 50a. Therefore, the situation where the pressing pressure from the terminal 50 is concentrated on the bottom surface 24b of the terminal hole 24 is suppressed, thereby suppressing the cracking or peeling of the ceramic plate 20 around the bottom surface 24b of the terminal hole 24. It should be noted that, from the viewpoint of evenly distributing the pressing pressure from the terminal 50, the dimensions of the C-surface of the terminal hole reduction surface 24a and the C-surface of the terminal hole reduction surface 50a are preferably equal. Furthermore, the inclination angles of the C-surfaces of the terminal hole reduction surface 24a and 50a are preferably equal. The inclination angles of the C-surfaces of the terminal hole reduction surface 24a and 50a can be, for example, 30° or more and 60° or less. The dimensions of the C-surfaces of the terminal hole reduction surface 24a and 50a can be, for example, 0.3 mm or more and 2.5 mm or less. It should be noted that the diameter of the bottom surface 24b of the terminal hole 24 can be smaller than the diameter of the side surface 50c of the terminal 50, or smaller than the diameter of the bottom surface 50b of the terminal 50. It should be noted that the present invention is not limited to any of the above embodiments. Of course, as long as it falls within the technical scope of the present invention, it can be implemented in various ways. In the above embodiment, the terminal hole reduced diameter surface 24a is defined as a C-surface with a C-shaped chamfer on the edge of the boundary between the bottom surface 24b and the side surface 24c of the terminal hole 24, but it is not limited to this. For example, like... Figure 4 As shown in another example of the wafer stage 10B, the terminal hole reduction surface 24a can be configured as an R-surface with an R-shaped chamfer at the edge of the boundary between the bottom surface 24b and the side surface 24c of the terminal hole 24. Alternatively, the bottom surface 24b of the terminal hole 24 can be an R-surface, which also serves as the terminal hole reduction surface 24a. The radius of curvature of the R-surface of the terminal hole reduction surface 24a can be, for example, 0.3 mm or more and 2.5 mm or less. It should be noted that... Figure 4 In this document, the same symbols are used to mark the same constituent elements as in the above embodiments. In the above embodiments and another example, the electrode extraction section 23 is shaped like a frustum, but it is not limited to this. For example, like... Figure 5As shown in another example of the wafer stage 10C, the electrode extraction section 23 can be configured as a frustum-cone shape. In this case, during the process of joining the terminal 50 and the electrostatic electrode 22, a conical or frustum-cone shaped component can be used as the circular plate component 23z. Alternatively, for example, like... Figure 6 As shown in another example of the wafer stage 10D, the electrode removal section 23 can be cylindrical. In this case, during the process of joining the terminal 50 and the electrostatic electrode 22, a cylindrical component can be used as the circular plate component 23z. It should be noted that... Figure 5 , 6 In this document, the same symbols are used to mark the same constituent elements as in the above embodiments. In the above embodiments and another example, the terminal hole reduced diameter surface 24a is configured to enter the electrode extraction portion 23, but is not limited to this. For example, like... Figure 7 As shown in another example of the wafer stage 10E, the terminal hole reduction surface 24a can be configured to contact the side surface 23a of the electrode extraction section 23 rather than enter the electrode extraction section 23. It should be noted that... Figure 7 In this document, the same symbols are used to mark the same constituent elements as in the above embodiments. In the above embodiments and another example, the terminal reduction surface 50a is a C-surface with a C-shaped chamfer on the edge of the boundary between the front end surface 50b and the side surface 50c of the terminal 50, but it is not limited to this. For example, the terminal reduction surface 50a can be an R-surface with an R-shaped chamfer on the edge of the boundary between the front end surface 50b and the side surface 50c of the terminal 50. Alternatively, the front end surface 50b of the terminal 50 can also be an R-surface, which also serves as the terminal reduction surface 50a. The radius of curvature of the R-surface of the terminal reduction surface 50a can be, for example, 0.3 mm or more and 2.5 mm or less. In addition, the terminal 50 may not have a terminal reduction surface 50a, and the front end surface 50b and the side surface 50c may intersect at a right angle. In the above embodiments and another example, the conductive joint 55 can connect the terminal 50 and the electrode extraction part 23 to achieve electrical connection between them. For example, it can be disposed only between the electrode extraction part 23 exposed on the bottom surface 24b of the terminal hole 24 and the front surface 50b of the terminal 50, or it can be disposed only between the electrode extraction part 23 exposed on the terminal hole reduced diameter surface 24a and the terminal reduced diameter surface 50a. In the above embodiments and another example, a metal rod is exemplified as terminal 50, but it is not particularly limited to this; for example, it can be a metal cable. In the above embodiments and another example, for the wafer stage 10, instead of the electrostatic electrode 22, or in addition to the electrostatic electrode 22, at least one of the heater electrode and the RF electrode (plasma generating electrode) can be implanted in the ceramic plate 20. In this case, the bonding structure between the heater electrode and the terminal for the heater electrode, or the bonding structure between the RF electrode and the terminal for the RF electrode, can be the same as the bonding structure between the electrostatic electrode 22 and the terminal 50 described above. Industrial availability This invention can be used in semiconductor manufacturing apparatuses for processing wafers. Symbol Explanation 10, 10B, 10C, 10D, 10E wafer stage, 20 ceramic plate, 20a wafer mounting surface, 22 electrostatic electrode, 23 electrode removal section, 23a side surface, 23z circular plate component, 24 terminal hole, 24a terminal hole reduced diameter surface, 24b bottom surface, 24c side surface, 25 boundary section, 30 cooling plate, 32 refrigerant flow path, 34 cooling plate through hole, 35 adhesive layer, 36 insulating tube, 40 bonding layer, 44 connector Through-hole, 50 terminal, 50a terminal reduced diameter surface, 50b front end surface, 50c side surface, 55 conductive joint, 55z bonding material, 62 DC power supply, 110 wafer stage, 120 ceramic plate, 120a wafer placement surface, 122 electrostatic electrode, 123 electrode removal part, 123a side surface, 124 terminal hole, 124b bottom surface, 150 terminal, 150b front end surface, 155 conductive joint.

Claims

1. A component for a semiconductor manufacturing apparatus, wherein, Possessing: a ceramic plate having a wafer placement surface on an upper surface; an electrode implanted in the ceramic plate; an electrode extraction portion implanted in the ceramic plate and disposed downward from the electrode; a terminal hole provided to reach the electrode extraction portion from a lower surface of the ceramic plate; a terminal inserted in the terminal hole; and a conductive joint portion provided between the terminal and the electrode extraction portion to join the terminal and the electrode extraction portion, the terminal hole has a terminal hole reduced diameter surface that is reduced in diameter toward a bottom of the terminal hole, the terminal hole reduced diameter surface being provided to intersect a side surface of the electrode extraction portion.

2. The semiconductor manufacturing apparatus component according to claim 1, wherein the side surface of the electrode extraction portion is reduced in diameter toward a lower side.

3. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein an angle formed by a virtual plane parallel to the electrode and the terminal hole reduced diameter surface is 20° or more and 75° or less at an intersection between the terminal hole reduced diameter surface and the side surface of the electrode extraction portion.

4. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein an intersection angle between the terminal hole reduced diameter surface and the side surface of the electrode extraction portion is 40° or more and 120° or less.

5. The semiconductor manufacturing apparatus component according to claim 4, wherein the side surface of the electrode extraction portion is reduced in diameter toward a lower side, and an inclination angle of the side surface of the electrode extraction portion is smaller than the intersection angle between the terminal hole reduced diameter surface and the side surface of the electrode extraction portion.

6. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein the terminal hole reduced diameter surface enters the electrode extraction portion.

7. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein the terminal hole reduced diameter surface is a C surface or an R surface provided between a bottom surface and a side surface of the terminal hole.

8. The semiconductor manufacturing apparatus component according to claim 1 or 2, wherein the terminal hole reduced diameter surface is a C surface provided between a bottom surface and a side surface of the terminal hole, the terminal has a terminal reduced diameter surface that is reduced in diameter toward a tip end of the terminal, the terminal reduced diameter surface being a C surface provided between a tip end surface and a side surface of the terminal, the terminal hole reduced diameter surface and the terminal reduced diameter surface are joined by the conductive joint portion. ​

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