Member for semiconductor manufacturing apparatus

Abstract

The member (10) for a semiconductor manufacturing apparatus is provided with: a central ceramic member (22) having a wafer placement surface (22a) on the upper surface thereof; an annular outer peripheral ceramic member (32) which has an FR placement surface (32a) on the upper surface and which is disposed on the outer peripheral side of the central ceramic member (22); and a conductive base member (40) having a central support part for supporting the central ceramic member (22) and an outer peripheral support part for supporting the outer peripheral ceramic member (32), the diameter of the outer peripheral surface (25) of the central ceramic member (22) and the diameter of the inner peripheral surface (35) of the outer peripheral ceramic member (32) changing in the vertical direction. The maximum diameter of the outer peripheral surface 25 of the central ceramic member 22 is smaller than the maximum diameter of the inner peripheral surface 35 of the outer peripheral ceramic member 32, and is larger than the minimum diameter of the inner peripheral surface 35 of the outer peripheral ceramic member 32.

Description

TECHNICAL FIELD

[0001] The present application relates to a component for a semiconductor manufacturing apparatus. BACKGROUND

[0002] In the past, as a component for a semiconductor manufacturing apparatus, a component for performing CVD or etching of a wafer using plasma has been known. In the component for a semiconductor manufacturing apparatus, in order to obtain uniformity of plasma at the outer periphery of the wafer, a focus ring is sometimes used at the outer periphery of the wafer. For example, the holding device of Patent Literature 1 has a central electrostatic chuck portion that mainly holds a wafer, and a peripheral electrostatic chuck portion that mainly holds a focus ring. The central electrostatic chuck portion has a central ceramic member on the upper surface of which a wafer is adsorbed, and a central base member made of metal that is joined to the lower surface of the central ceramic member with a central joint portion made of resin. The peripheral electrostatic chuck portion has a peripheral ceramic member on the upper surface of which a focus ring is adsorbed, and a peripheral base member made of metal that is joined to the lower surface of the peripheral ceramic member with a peripheral joint portion made of resin. The peripheral electrostatic chuck portion is a substantially circular ring-shaped member that surrounds the central electrostatic chuck portion in plan view. The peripheral electrostatic chuck portion is separate from the central electrostatic chuck portion, and there is a gap between the peripheral electrostatic chuck portion and the central electrostatic chuck portion.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent No. 7152926 SUMMARY

[0006] However, in a component for a semiconductor manufacturing apparatus in which there is a gap between a central electrostatic chuck portion and a peripheral electrostatic chuck portion, like the holding device of Patent Literature 1, sometimes the base member made of metal or the joint portion made of resin that is exposed in the gap is corroded, resulting in a reduction in the life of the apparatus. According to the inventor's insight, because ions of argon or the like for plasma processing are accelerated toward the component for a semiconductor manufacturing apparatus, intrude into the gap, collide with other atoms or molecules in the gap, generate plasma or radicals, and corrode the metal or resin around them, and the like, the above-mentioned reduction in the life occurs.

[0007] The present application was implemented in order to solve the above-mentioned problem, and the main object thereof is to suppress a reduction in the life of the apparatus.

[0008] [1] The component for a semiconductor manufacturing apparatus of the present application has:

[0009] a central ceramic member that has a wafer placement surface on the upper surface thereof;

[0010] a ring-shaped outer peripheral ceramic member having a focusing ring mounting surface on an upper surface, disposed on an outer peripheral side of the central ceramic member; and

[0011] a base member having a central support portion joined to a lower surface of the central ceramic member and supporting the central ceramic member, and an outer peripheral support portion joined to a lower surface of the outer peripheral ceramic member and supporting the outer peripheral ceramic member, the central support portion and the outer peripheral support portion being configured in a separate body or in a single body,

[0012] the diameters of the outer peripheral surface of the central ceramic member and the inner peripheral surface of the outer peripheral ceramic member vary in the vertical direction,

[0013] the maximum diameter of the outer peripheral surface of the central ceramic member is smaller than the maximum diameter of the inner peripheral surface of the outer peripheral ceramic member and larger than the minimum diameter of the inner peripheral surface of the outer peripheral ceramic member.

[0014] In the semiconductor manufacturing device member, the diameters of the outer peripheral surface of the central ceramic member and the inner peripheral surface of the outer peripheral ceramic member vary in the vertical direction. Also, the maximum diameter of the outer peripheral surface of the central ceramic member is smaller than the maximum diameter of the inner peripheral surface of the outer peripheral ceramic member and smaller than the minimum diameter of the inner peripheral surface of the outer peripheral ceramic member. Therefore, if the semiconductor manufacturing device member is viewed from above, the outer peripheral portion of the central ceramic member and the inner peripheral portion of the outer peripheral ceramic member overlap. In the semiconductor manufacturing device member, ions accelerated toward the semiconductor manufacturing device member when plasma processing is performed collide with the ceramic members before reaching the base member and the joint portion, and cannot proceed further. Accordingly, the generation of plasma or radicals around the base member and the joint portion is suppressed, and as a result, the reduction in the life of the device can be suppressed.

[0015] Note that in this specification, up and down, left and right, front and back, and the like are sometimes used to describe the present application, but up and down, left and right, front and back are merely relative positional relationships. Therefore, in the case where the orientation of the semiconductor manufacturing device member is changed, up and down can become left and right, or left and right can become up and down, but such cases are also included in the technical scope of the present application.

[0016] [2] In the semiconductor manufacturing device member of the present application (the semiconductor manufacturing device member described in [1]), the minimum diameter of the outer peripheral surface of the central ceramic member can be smaller than the minimum diameter of the inner peripheral surface of the outer peripheral ceramic member. The central ceramic member and the outer peripheral ceramic member can be made by, for example, cutting a ceramic plate.

[0017] [3] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [1] or [2]), in a cross-section obtained by cutting the semiconductor manufacturing apparatus component along a direction perpendicular to the wafer placement surface, the outer peripheral surface of the central ceramic component and the inner peripheral surface of the outer peripheral ceramic component may each be represented as oblique lines. The central ceramic component and the outer peripheral ceramic component can be manufactured, for example, by hollowing out a ceramic plate into a frustum-shaped cone or an inverted frustum-shaped cone.

[0018] [4] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [3]), the outer peripheral surface of the central ceramic component may be a conical surface with a larger diameter as it moves upward.

[0019] [5] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [3]), the outer peripheral surface of the central ceramic component may be a conical surface with a smaller diameter as it moves upward.

[0020] [6] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [5]), the peripheral support portion may be an annular portion disposed on the periphery of the central support portion with an open gap from the central support portion. Accordingly, the temperature of the peripheral support portion and the temperature of the central support portion can be easily controlled separately, and furthermore, the temperature of the wafer mounting surface and the temperature of the focusing ring mounting surface can be easily controlled separately.

[0021] [7] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in [6]), the central ceramic component and the central support portion are joined by a central metal joint, the outer peripheral surface of which, together with the outer peripheral surface of the central support portion, is covered by a central insulating film; the outer peripheral ceramic component and the outer peripheral support portion are joined by a peripheral metal joint, the inner peripheral surface of which, together with the inner peripheral surface of the outer peripheral support portion, is covered by an outer peripheral insulating film. Accordingly, since the joint and the base component are covered by an insulating film, corrosion of the joint and the base component can be further suppressed. In addition, since the joint is made of metal and not resin, even if an insulating film is formed by spraying or the like, the joint is not easily deteriorated.

[0022] [8] In the semiconductor manufacturing apparatus component of the present invention (the semiconductor manufacturing apparatus component described in any one of [1] to [6]), the central ceramic component and the central support portion may be joined by a resin-made central joint, and the peripheral ceramic component and the peripheral support portion may be joined by a resin-made peripheral joint. Since the resin adhesive layer is easily corroded, the application of the present invention is of great significance.

[0023] [9] Alternatively, the semiconductor manufacturing apparatus component of the present application can be a semiconductor manufacturing apparatus component for a focus ring, which includes: an annular outer peripheral ceramic member having a focus ring placement surface on an upper surface and configured to be disposed on an outer peripheral side of a central ceramic member having a wafer placement surface; and a conductive base member having an outer peripheral support portion that is joined to a lower surface of the outer peripheral ceramic member and supports the outer peripheral ceramic member, wherein a diameter of an inner peripheral surface of the outer peripheral ceramic member varies in a vertical direction, and the inner peripheral surface of the outer peripheral ceramic member is a tapered surface that increases in diameter toward the upper side or decreases in diameter toward the upper side. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is a longitudinal sectional view of the semiconductor manufacturing apparatus component 10.

[0025] Figure 2 is a plan view of the semiconductor manufacturing apparatus component 10.

[0026] Figure 3 is a partial enlarged view of Figure 1

[0027] Figure 4 is a manufacturing process diagram of the central ceramic member 22 and the outer peripheral ceramic member 32.

[0028] Figure 5 is a longitudinal sectional view of another example of the semiconductor manufacturing apparatus component 10B.

[0029] Figure 6 is a plan view of another example of the semiconductor manufacturing apparatus component 10B.

[0030] Figure 7 is a partial enlarged view of Figure 5

[0031] Figure 8 is a longitudinal sectional view of another example of the semiconductor manufacturing apparatus component 10C.

[0032] Figure 9 is a longitudinal sectional view of another example of the semiconductor manufacturing apparatus component 10D.

[0033] Figure 10 is a partial enlarged view of a comparative example of the semiconductor manufacturing apparatus component 110. DETAILED DESCRIPTION

[0034] Hereinafter, a preferred embodiment of the present application will be described with reference to the accompanying drawings. Figure 1 ​​is a longitudinal sectional view of the semiconductor manufacturing apparatus component 10 (a sectional view when cut in a plane including the central axis of the semiconductor manufacturing apparatus component 10). Figure 2 is a plan view of the semiconductor manufacturing apparatus component 10. Figure 3 is Figure 1 is a partial enlarged view of Figure 4 is a manufacturing process view of the central ceramic component 22 and the outer peripheral ceramic component 32.

[0035] The semiconductor manufacturing apparatus component 10 is a component used for CVD, etching, or the like of a wafer W using plasma, and is fixed to a setting plate 84 provided inside a chamber 80 for semiconductor processing. The semiconductor manufacturing apparatus component 10 has a central ceramic component 22, an outer peripheral ceramic component 32, and a base component 40. In the present embodiment, the base component 40 has a central base component 42 as a central support portion, and an outer peripheral base component 52 as an outer peripheral support portion. The central ceramic component 22 and the central base component 42 are joined by a central joining portion 62. The outer peripheral ceramic component 32 and the outer peripheral base component 52 are joined by an outer peripheral joining portion 67. The central ceramic component 22 and the outer peripheral ceramic component 32 are also collectively referred to as a ceramic component 20. The central joining portion 62 and the outer peripheral joining portion 67 are also collectively referred to as a joining portion 60. The semiconductor manufacturing apparatus component 10 can have a focus ring 70. Hereinafter, the "focus ring" is simply referred to as "FR".

[0036] The central ceramic component 22 is a ceramic circular plate component, and has a circular wafer placement surface 22a on an upper surface. A wafer W is placed on the wafer placement surface 22a. The diameter of the wafer placement surface 22a is smaller than the diameter of the wafer W (for example, 300 mm). The central ceramic component 22 is formed of a ceramic material represented by alumina, aluminum nitride, or the like. The central ceramic component 22 has a wafer suction electrode 24 built therein. The wafer suction electrode 24 is formed of a material containing, for example, W, Mo, WC, MoC, or the like. The wafer suction electrode 24 is a plate-like or mesh-like monopolar electrostatic electrode. An upper layer of the central ceramic component 22 than the wafer suction electrode 24 functions as a dielectric layer. The wafer suction electrode 24 is connected to a not-shown wafer suction direct-current power supply.

[0037] The peripheral ceramic component 32 is an annular component with an annular FR placement surface 32a on its upper surface. The peripheral ceramic component 32 is separate from the central ceramic component 22 and is disposed on the outer periphery of the central ceramic component 22 with an open gap. The FR placement surface 32a is positioned one level lower than the wafer placement surface 22a. An FR70 is placed on the FR placement surface 32a. The inner diameter of the FR placement surface 32a is approximately the same as the inner diameter of the FR70. The peripheral ceramic component 32 is formed of a ceramic material such as alumina or aluminum nitride. An FR adsorption electrode 34 is built into the peripheral ceramic component 32. The FR adsorption electrode 34 is formed of a material containing, for example, W, Mo, WC, or MoC. The FR adsorption electrode 34 is a plate-shaped or mesh-shaped unipolar electrostatic electrode. The layer in the peripheral ceramic component 32 above the FR adsorption electrode 34 functions as a dielectric layer. An FR adsorption DC power supply (not shown) is connected to the FR adsorption electrode 34. The outer peripheral ceramic component 32 and the central ceramic component 22 can have the same thickness.

[0038] The outer peripheral surface 25 of the central ceramic component 22 is a conical surface (the outer surface of an inverted frustum) that increases in diameter towards the upper side. For example... Figure 3 As shown, the outer peripheral surface 25 of the central ceramic component 22 is inclined towards the outer periphery at an angle α relative to the vertical direction, starting from its lower end 25b. The angle α is, for example, 10° or more and 80° or less. Furthermore, the inner peripheral surface 35 of the outer peripheral ceramic component 32 is a conical surface with a larger diameter towards the upper side (the inner surface obtained by carving out an inverted frustum from the disk). Figure 3 As shown, the inner circumferential surface 35 of the outer peripheral ceramic component 32 is inclined towards the outer peripheral side at an angle β relative to the vertical direction, with its lower end 35b as the starting point. The angle β is, for example, 10° or more and 80° or less. The angle β can be the same as or different from the angle α. Furthermore, as... Figure 2 As shown, the maximum diameter Pmax of the outer peripheral surface 25 of the central ceramic component 22 (the diameter of the upper end 25a of the outer peripheral surface 25 in this embodiment) is smaller than the maximum diameter Qmax of the inner peripheral surface 35 of the outer peripheral ceramic component 32 (the diameter of the upper end 35a of the inner peripheral surface 35 in this embodiment), and larger than the minimum diameter Qmin of the inner peripheral surface 35 of the outer peripheral ceramic component 32 (the diameter of the lower end 35b of the inner peripheral surface 35 in this embodiment). Therefore, when viewed from above, the outer peripheral portion 26 of the central ceramic component 22 and the inner peripheral portion 36 of the outer peripheral ceramic component 32 overlap. It should be noted that when viewed from above, the inner peripheral surface 35 of the outer peripheral ceramic component 32 is located between the wafer mounting surface 22a and the FR mounting surface 32a, and its interior cannot be seen.

[0039] For example, the central ceramic component 22 and the outer peripheral ceramic component 32 can be manufactured as follows. Figure 4is a manufacturing process diagram of the central ceramic member 22 and the outer peripheral ceramic member 32. First, as shown in Figure 4 (A), one ceramic plate 21 in which a wafer adsorption electrode 24 and an FR adsorption electrode 34 are implanted is prepared. For example, the ceramic plate 21 is manufactured as follows. First, two circular plate-shaped bodies of ceramic powder are manufactured. Next, on the upper surface of the first circular plate-shaped body, a central printed electrode of the same shape as the wafer adsorption electrode 24 and an outer peripheral printed electrode of the same shape as the FR adsorption electrode 34 are printed in concentric circular shapes. Then, the second circular plate-shaped body is stacked on the printed electrode surface of the first circular plate-shaped body to manufacture a stacked body. The stacked body is subjected to hot-press sintering to obtain the ceramic plate 21. Next, as shown in Figure 4 (B), with respect to the ceramic plate 21, the circular plate-shaped central portion is excavated from the outer peripheral portion in a circular ring shape by machining to obtain the central ceramic member 22 and the outer peripheral ceramic member 32. At the time of excavating the circular plate-shaped central portion, the circular plate-shaped central portion is processed into an inverted conical frustum shape. In the case where the central ceramic member 22 and the outer peripheral ceramic member 32 are manufactured from one ceramic plate as described above, the manufacturing cost can be easily suppressed as compared with the case where a ceramic plate for the central ceramic member 22 and a ceramic plate for the outer peripheral ceramic member 32 are prepared separately. In addition, as shown in Figure 4 (C), the central ceramic member 22 and the outer peripheral ceramic member 32 manufactured as described above can adjust the size of the gap therebetween by shifting the relative positions in the vertical direction. Note that the outer peripheral surface 25 of the central ceramic member 22 or the inner peripheral surface 35 of the outer peripheral ceramic member 32 can be further subjected to machining to provide a concavo-convex shape or the like.

[0040] The central base member 42 is a circular plate member of an electrically conductive material, and has a circular central support surface 42a on the upper surface. The central ceramic member 22 is joined to the central support surface 42a. The diameter of the central support surface 42a is the same as the diameter of the lower surface of the central ceramic member 22. The central base member 42 has a central refrigerant flow path 44 through which refrigerant circulates inside. The central refrigerant flow path 44 is formed so as to extend across the entire central base member 42 in one stroke when viewed from above. The refrigerant that flows through the central refrigerant flow path 44 is preferably a liquid, and is preferably electrically insulating. As the electrically insulating liquid, for example, a fluorine-based non-active liquid or the like can be given. The central base member 42 is made of an electrically conductive material containing, for example, a metal. As the electrically conductive material, for example, a metal, a composite material, or the like can be given. As the metal, for example, Al, Ti, Mo, or an alloy thereof, or the like can be given. As the composite material, for example, a metal matrix composite (MMC), a ceramic matrix composite (CMC), or the like can be given. As specific examples of the above composite material, a material containing Si, SiC, and Ti, a material obtained by impregnating Al and / or Si in a SiC porous body, or the like can be given. The material containing Si, SiC, and Ti is referred to as SiSiCTi, the material obtained by impregnating Al in a SiC porous body is referred to as AlSiC, and the material obtained by impregnating Si in a SiC porous body is referred to as SiSiC. As the material of the central base member 42, from the viewpoint of improving the cooling efficiency, a material having a high thermal conductivity, for example, Al or an Al alloy is preferable. In addition, as the material of the central base member 42, from the viewpoint of suppressing breakage or the like caused by thermal stress, a material having a thermal expansion coefficient close to that of the material of the central ceramic member 22, for example, a composite material of a metal and a ceramic is preferable. The central base member 42 also functions as an RF electrode. On the outer peripheral surface of the central base member 42, a central insulating film 77 formed of an insulating material (for example, alumina, yttria) is formed. The central insulating film 77 can be a sputtered film.

[0041] The outer peripheral base member 52 is a conductive annular member having an annular outer peripheral support surface 52a on the upper surface. The outer peripheral base member 52 is separate from the central base member 42 and is disposed at the outer periphery of the central base member 42 with a gap from the central base member 42. The outer peripheral support surface 52a is disposed at a level lower than the central support surface 42a. The outer peripheral ceramic member 32 is joined to the outer peripheral support surface 52a. The inner diameter and the outer diameter of the outer peripheral support surface 52a are the same as the inner diameter and the outer diameter of the lower surface of the outer peripheral ceramic member 32, respectively. The outer peripheral base member 52 has an outer peripheral refrigerant flow path 54 through which refrigerant circulates inside. The outer peripheral refrigerant flow path 54 is provided so as to extend over the entire outer peripheral base member 52 in one stroke in plan view. The refrigerant flowing through the outer peripheral refrigerant flow path 54 is preferably a liquid and is preferably electrically insulating. As the electrically insulating liquid, for example, a fluorine-based non-active liquid or the like can be given. The outer peripheral base member 52 is made of a conductive material containing, for example, a metal. As the conductive material, the materials exemplified in the central base member 42 can be given. As the material of the outer peripheral base member 52, from the viewpoint of improving the cooling efficiency, a material having a high thermal conductivity, for example, Al or an Al alloy is preferable. As the material of the outer peripheral base member 52, from the viewpoint of suppressing breakage or the like caused by thermal stress, a material having a thermal expansion coefficient close to that of the material of the outer peripheral ceramic member 32, for example, a composite material of a metal and a ceramic is preferable. The outer peripheral base member 52 also functions as an RF electrode. An outer peripheral insulating film 78 formed of an insulating material (for example, alumina, yttria) is formed on the inner peripheral surface of the outer peripheral base member 52. In addition, an outermost peripheral insulating film 79 formed of an insulating material (for example, alumina, yttria) is formed on the outer peripheral surface of the outer peripheral base member 52. The outer peripheral insulating film 78 and the outermost peripheral insulating film 79 can be sputtered films.

[0042] The central joint portion 62 joins the lower surface of the central ceramic member 22 and the upper surface of the central base member 42. In the present embodiment, the central joint portion 62 is an adhesive layer made of a resin. As the resin, an acrylic resin, a silicone resin, an epoxy resin, or the like can be used. In addition, the adhesive layer can further contain a filler.

[0043] The outer peripheral joint portion 67 joins the lower surface of the outer peripheral ceramic member 32 and the upper surface of the outer peripheral base member 52. In the present embodiment, the outer peripheral joint portion 67 is an adhesive layer made of a resin. As the resin, an acrylic resin, a silicone resin, an epoxy resin, or the like can be used. In addition, the adhesive layer can further contain a filler.

[0044] FR70 is a ring-shaped member, such as formed of silicon, which is placed on the FR placement surface 32a. A step 72 is provided on the upper portion of the inner peripheral surface of the FR 70 in the circumferential direction. The step 72 is provided to prevent interference between the wafer W and the FR 70. The inner diameter of the FR 70 is substantially the same as the inner diameter of the FR placement surface 32a.

[0045] Next, a use example of the semiconductor manufacturing apparatus member 10 will be described. Figure 1 The chamber 80 has a shower head 82 on the top surface. The semiconductor manufacturing apparatus member 10 is fixed to a setting plate 84 which is disposed inside the chamber 80. Specifically, the O-rings 87, 88, 89 are disposed concentrically between the lower surface of the base member 40 and the upper surface of the setting plate 84, and in this state, the setting plate 84 and the base member 40 are fastened with a plurality of bolts 90, whereby the semiconductor manufacturing apparatus member 10 is fixed to the setting plate 84. The O-ring 87 has a diameter substantially the same as the diameter of the central base member 42, the O-ring 88 has a diameter substantially the same as the inner diameter of the outer peripheral base member 52, and the O-ring 89 has a diameter substantially the same as the outer diameter of the outer peripheral base member 52. The bolt 90 has a head portion and a foot portion. The bolt 90 is inserted from below through the stepped bolt insertion hole 86 which penetrates the setting plate 84 in the vertical direction, and the foot portion is screwed into the screw hole 41 provided on the lower surface of the base member 40. At this time, the head portion of the bolt 90 engages with the stepped portion of the bolt insertion hole 86. The O-rings 87, 88, 89 are pressed in the vertical direction to provide sealing. If there are other portions which require sealing, O-rings are provided at those portions as well.

[0046] In the case where the wafer W is processed using the semiconductor manufacturing apparatus member 10, the FR 70 is placed on the FR placement surface 32a of the semiconductor manufacturing apparatus member 10, and the disc-shaped wafer W is placed on the wafer placement surface 22a. In this state, a direct current voltage is applied to the wafer chucking electrode 24 to chuck the wafer W to the wafer placement surface 22a, and a direct current voltage is applied to the FR chucking electrode 34 to chuck the FR 70 to the FR placement surface 32a. Then, the inside of the chamber 80 is set to a predetermined vacuum atmosphere (or a reduced pressure atmosphere), and a high frequency voltage is applied between the shower head 82 and the base member 40 while a process gas is supplied from the shower head 82. As a result, plasma is generated between the base member 40 and the shower head 82. Then, the wafer W is processed using the plasma.

[0047] Note that as the wafer W is processed by the plasma, the FR 70 is also consumed, but since the FR 70 is thicker than the wafer W, the FR 70 is replaced after a plurality of wafers W are processed.

[0048] In the case where the semiconductor manufacturing apparatus component 10 itself is subjected to dry cleaning, it can be performed in a state where the wafer W is not loaded on the wafer loading surface 22a of the semiconductor manufacturing apparatus component 10 (cleaning without wafer). The cleaning without wafer includes a case where it is performed in a state where the FR 70 is loaded on the FR loading surface 32a, and a case where it is performed in a state where the FR 70 is not loaded on the FR loading surface 32a. In the case where it is performed in a state where the FR is loaded, a direct current voltage is applied to the FR adsorption electrode 34, and the FR 70 is adsorbed to the FR loading surface 32a. Then, the inside of the chamber 80 is set to a prescribed vacuum atmosphere (or a reduced pressure atmosphere), and a high frequency voltage is applied between the shower head 82 and the susceptor component 40 while supplying a cleaning gas from the shower head 82. Thus, plasma is generated between the susceptor component 40 and the shower head 82. Then, cleaning of the semiconductor manufacturing apparatus component 10 and the like is performed using the plasma.

[0049] When the semiconductor manufacturing apparatus component 10 is used, ions (for example, argon ions) of the plasma generated between the susceptor component 40 and the shower head 82 are accelerated toward the semiconductor manufacturing apparatus component 10 in a direction substantially perpendicular to the wafer loading surface 22a and the FR loading surface 32a. The accelerated ions sometimes collide with other molecules or atoms (for example, atoms or molecules of a corrosive gas), generate plasma or radicals, and thus corrode the metal or resin located around them. In particular, when the cleaning without wafer is performed, the above-mentioned corrosion is likely to occur.

[0050] Hereinafter, this point will be described in detail. Figure 10 is a partial enlarged view of the semiconductor manufacturing apparatus component 110 of the comparative example (a prior art example disclosed in Patent Document 1). In the semiconductor manufacturing apparatus component 110, the diameters of the outer peripheral surface 125 of the central ceramic component 122 and the inner peripheral surface 135 of the outer peripheral ceramic component 132 are constant in the vertical direction, and if the semiconductor manufacturing apparatus component 110 is viewed from above, the central ceramic component 122 and the outer peripheral ceramic component 132 do not overlap each other, and the inside can be seen from the gap therebetween. In this semiconductor manufacturing apparatus component 110, accelerated ions intrude into the gap between the central susceptor component 142 and the outer peripheral susceptor component 152, or the gap between the central joint portion 162 and the outer peripheral joint portion 167, as shown in (A). Then, the susceptor component 140 or the joint portion 160 around them is corroded by the plasma or radicals generated by the accelerated ions colliding with other atoms or molecules in the gap, and thus the life of the semiconductor manufacturing apparatus component 110 is reduced. It should be noted that in the semiconductor manufacturing apparatus component 110, the outer peripheral surface 125 of the central ceramic component 122 has a step 125s in which the upper side becomes a small diameter in the circumferential direction, as shown in (B). Thus, the accelerated ions intrude into the gap between the central susceptor component 142 and the outer peripheral susceptor component 152, or the gap between the central joint portion 162 and the outer peripheral joint portion 167, as shown in (C). Figure 10 Figure 10 ​As shown in (B), the inner periphery of FR170 is disposed on step 125s. Accordingly, when performing waferless dry cleaning with FR170 placed on FR placement surface 132a, the accelerated ions impact FR170 and cannot advance further, thus suppressing corrosion of the base component 140 or the junction 160. However, since waferless dry cleaning is performed with FR170 placed on FR placement surface 132a, FR170 is corroded by the accelerated ions, resulting in a reduced lifespan of FR170. Therefore, when using semiconductor manufacturing apparatus component 110, the overall operating cost of the semiconductor manufacturing apparatus increases, and the apparatus lifespan decreases.

[0051] In contrast, in this embodiment, the diameters of the outer peripheral surface 25 of the central ceramic component 22 and the inner peripheral surface 35 of the outer peripheral ceramic component 32 change in both the vertical and horizontal directions. If viewed from above, the outer peripheral portion 26 of the central ceramic component 22 and the inner peripheral portion 36 of the outer peripheral ceramic component 32 overlap. In this semiconductor manufacturing apparatus component 10, accelerated ions such as... Figure 3 As shown, the ceramic component 20 is impacted before reaching the base component 40 and the junction 60, preventing further progress. Accordingly, the generation of plasma or free radicals around the base component 40 or the junction 60 is suppressed, corrosion of the base component 40 or the junction 60 is suppressed, and consequently, the reduction in device lifespan is suppressed. Furthermore, if the semiconductor manufacturing apparatus component 10 is viewed from above, the outer periphery 26 of the central ceramic component 22 and the inner periphery 36 of the outer periphery ceramic component 32 overlap. Therefore, even when performing waferless dry cleaning without placing the FR70 on the FR placement surface 32a, corrosion of the base component 40 or the junction 60 can be suppressed. Therefore, the lifespan of the FR70 can be improved, thereby reducing the overall device lifespan reduction of the semiconductor manufacturing apparatus.

[0052] According to the semiconductor manufacturing apparatus component 10 described above, the diameters of the outer peripheral surface 25 of the central ceramic component 22 and the inner peripheral surface 35 of the outer peripheral ceramic component 32 both change in the vertical direction. Furthermore, the maximum diameter Pmax of the outer peripheral surface 25 of the central ceramic component 22 is smaller than the maximum diameter Qmax of the inner peripheral surface 35 of the outer peripheral ceramic component 32, and also smaller than the minimum diameter Qmin of the inner peripheral surface 35 of the outer peripheral ceramic component 32. Therefore, when the semiconductor manufacturing apparatus component 10 is viewed from above, the outer peripheral portion 26 of the central ceramic component 22 and the inner peripheral portion 36 of the outer peripheral ceramic component 32 overlap. Therefore, as described above, the reduction in device lifespan is suppressed.

[0053] Further, the minimum diameter Pmin of the outer peripheral surface 25 of the central ceramic member 22 (the diameter of the lower end 25b of the outer peripheral surface 25 in the present embodiment) is smaller than the minimum diameter Qmin of the inner peripheral surface 35 of the outer peripheral ceramic member 32. The central ceramic member 22 and the outer peripheral ceramic member 32 can be produced by, for example, cutting out one ceramic plate. In this case, as compared with the case where a ceramic plate for the central ceramic member 22 and a ceramic plate for the outer peripheral ceramic member 32 are prepared separately, it is easy to suppress the manufacturing cost.

[0054] Further, in a cross section of the semiconductor manufacturing device member 10 obtained by cutting along a direction perpendicular to the wafer placement surface 22a, the outer peripheral surface 25 of the central ceramic member 22 and the inner peripheral surface 35 of the outer peripheral ceramic member 32 each appear as an inclined line. The central ceramic member 22 and the outer peripheral ceramic member 32 can be produced by, for example, cutting out one ceramic plate into a circular truncated cone shape or an inverted circular truncated cone shape. If this shape, cutting out is relatively easy, and it is easy to suppress the manufacturing cost.

[0055] Further, the outer peripheral base member 52 as the outer peripheral support portion is an annular portion disposed with a gap from the central base member 42 as the central support portion. Therefore, it is easy to control the temperature of the outer peripheral base member 52 and the temperature of the central base member 42 separately, and further, it is easy to control the temperature of the wafer placement surface 22a and the temperature of the FR placement surface 32a separately.

[0056] Further, the central ceramic member 22 and the central base member 42 as the central support portion are joined by a central joining portion 62 made of resin, and the outer peripheral ceramic member 32 and the outer peripheral base member 52 as the outer peripheral support portion are joined by an outer peripheral joining portion 67 made of resin. A resin-made adhesive layer is easily corroded, and therefore, it is significant to apply the present application.

[0057] Note that the present application is not limited to the above-described embodiments, and of course, can be implemented in various modes as long as it belongs to the technical scope of the present application.

[0058] In the above-described embodiments, the outer peripheral surface 25 of the central ceramic member 22 is a tapered surface whose diameter increases toward the upper side, but the diameter can change in the up-down direction, and is not limited thereto. The outer peripheral surface 25 of the central ceramic member 22 can be, for example, a flat surface whose diameter is constant, or a curved surface whose diameter changes in a predetermined manner. Figures 5-7In another example, as in the semiconductor manufacturing apparatus component 10B, the taper (the outer side surface of the truncated cone) is smaller in diameter as it goes upward. In the above embodiment, the inner peripheral surface 35 of the outer peripheral ceramic member 32 is a taper that is larger in diameter as it goes upward, but the diameter can change in the vertical direction without particular limitation. The inner peripheral surface 35 of the outer peripheral ceramic member 32 can be, for example, a taper that is smaller in diameter as it goes upward, as in the semiconductor manufacturing apparatus component 10B (the inner side surface of the truncated cone obtained by digging out a disc). Note that, Figures 5-7 In the above embodiment, the same reference numerals are used to denote the same components.

[0059] In the semiconductor manufacturing apparatus component 10B, as shown in Figure 7 the outer peripheral surface 25 of the central ceramic member 22 is inclined at an angle γ toward the inner peripheral side with respect to the vertical direction from the lower end 25b thereof. The angle γ is, for example, 10° or more and 80° or less. In addition, as shown in Figure 7 the inner peripheral surface 35 of the outer peripheral ceramic member 32 is inclined at an angle δ toward the inner peripheral side with respect to the vertical direction from the lower end 35b thereof. The angle δ is, for example, 10° or more and 80° or less. The angle δ can be the same as the angle γ or different therefrom. In the semiconductor manufacturing apparatus component 10B, as shown in Figure 6 the maximum diameter Pmax (in this other example, the diameter of the lower end 25b of the outer peripheral surface 25) of the outer peripheral surface 25 of the central ceramic member 22 is smaller than the maximum diameter Qmax (in this other example, the diameter of the lower end 35b of the inner peripheral surface 35) of the inner peripheral surface 35 of the outer peripheral ceramic member 32 and larger than the minimum diameter Qmin (in this other example, the diameter of the upper end 35a of the inner peripheral surface 35) of the inner peripheral surface 35 of the outer peripheral ceramic member 32. Therefore, if the semiconductor manufacturing apparatus component 10B is viewed from above, the outer peripheral portion 26 of the central ceramic member 22 and the inner peripheral portion 36 of the outer peripheral ceramic member 32 overlap. Note that, if the semiconductor manufacturing apparatus component 10B is viewed from above, the outer peripheral surface 25 of the central ceramic member 22 is present between the wafer placement surface 22a and the FR placement surface 32a, and the inside thereof cannot be seen. In this semiconductor manufacturing apparatus component 10B, ions accelerated as shown in Figure 7 collide with the ceramic member 20 before reaching the pedestal member 40 or the joint portion 60, and cannot proceed further. Accordingly, the generation of plasma or radicals around the pedestal member 40 or the joint portion 60 is suppressed, and the corrosion of the pedestal member 40 or the joint portion 60 is suppressed, and as a result, the reduction in the device lifetime of the entire semiconductor manufacturing apparatus is suppressed. In addition, even if the waferless dry cleaning is performed in a state where the FR 70 is not placed on the FR placement surface 32a, the corrosion of the pedestal member 40 or the joint portion 60 can be suppressed, and therefore, the lifetime of the FR 70 can be improved, and thus the reduction in the device lifetime of the entire semiconductor manufacturing apparatus can be suppressed.

[0060] In the semiconductor manufacturing apparatus component 10B, the minimum diameter Pmin of the outer peripheral surface 25 of the central ceramic member 22 (the diameter of the upper end 25a of the outer peripheral surface 25 in the present embodiment) is smaller than the minimum diameter Qmin of the inner peripheral surface 35 of the outer peripheral ceramic member 32. The central ceramic member 22 and the outer peripheral ceramic member 32 can be produced by, for example, cutting out a ceramic plate.

[0061] The central ceramic member 22 and the outer peripheral ceramic member 32 of the semiconductor manufacturing apparatus component 10B can be produced by, for example, cutting out a ceramic plate. Figure 4 In this case, Figure 4 In B, when the central portion is cut out in a circular plate shape, the central portion can be processed into a circular truncated cone shape.

[0062] In the above-described embodiments and another example, the central joining portion 62 and the outer peripheral joining portion 67 are provided as adhesive layers made of resin, but can be, for example, joining layers made of metal formed of solder or metal brazing material. The joining layers made of metal can be formed by, for example, TCB (Thermal compression bonding). TCB refers to a known method in which a metal joining material is interposed between two members to be joined, and the two members are press-bonded in a state in which the temperature is heated to a temperature below the solidus temperature of the metal joining material. In the case where the central joining portion 62 and the outer peripheral joining portion 67 are provided as joining layers made of metal, the joining layers can be formed by, for example, TCB as in the semiconductor manufacturing apparatus component 10C of another example shown in Figure 8 In the case where the central joining portion 62 and the outer peripheral joining portion 67 are provided as joining layers made of metal, the outer peripheral surface of the central joining portion 62 can be covered by a central insulating film 77 together with the outer peripheral surface of the central pedestal member 42 that is a central support portion, and the outer peripheral surface of the outer peripheral joining portion 67 can be covered by an outer peripheral insulating film 78 together with the inner peripheral surface of the outer peripheral pedestal member 52 that is an outer peripheral support portion. In addition, the outer peripheral surface of the outer peripheral joining portion 67 can be covered by an outermost peripheral insulating film 79 together with the outer peripheral surface of the outer peripheral pedestal member 52 that is an outer peripheral support portion. According to this, since the joining portion 60 and the pedestal member 40 are covered by the insulating films, corrosion of the joining portion 60 and the pedestal member 40 is further suppressed. In addition, since the joining portion 60 is made of metal and not made of resin, even if the insulating films are formed by sputtering or the like, the joining portion 60 is less likely to deteriorate. Figure 8 In the above-described embodiments and another example, the same reference numerals are attached to the same constituent elements as those of the above-described embodiments.

[0063] In the above-described embodiments and another example, the central pedestal member 42 that is a central support portion and the outer peripheral pedestal member 52 that is an outer peripheral support portion are separate from each other with respect to the pedestal member 40, but can be integrated. In this case, the pedestal member 40 can be, for example, a circular plate-shaped pedestal member as in the semiconductor manufacturing apparatus component 10A of another example shown in Figure 9Another example of the semiconductor manufacturing apparatus component 10D is configured as a single body having the central base member 42 and the outer peripheral base member 52 connected by the connecting portion 48. In the semiconductor manufacturing apparatus component 10D, it is preferable that an insulating film be provided on the upper surface of the connecting portion 48 as well as the central insulating film 77 and the outer peripheral insulating film 78. Note that the base member 40 can not have a gap between the central base member 42 and the outer peripheral base member 52, but by providing a gap, it is easy to control the temperature of the outer peripheral base member 52 and the temperature of the central base member 42 separately, and furthermore, it is easy to control the temperature of the wafer placement surface 22a and the temperature of the focus ring placement surface 32a separately. Figure 9 In the above-described embodiments, the same reference numerals are used to denote the same components.

[0064] In the above-described embodiments and another example, the outer peripheral ceramic member 32 and the central ceramic member 22 are arranged with a gap, but can be arranged without a gap (including the case where the joining portion 60 and the base member 40 are covered with a sputtered film and there is no gap). If arranged with a gap, it is easy to control the temperature of the wafer placement surface 22a and the temperature of the focus ring placement surface 32a separately. On the other hand, if arranged without a gap, it is possible to suppress abnormal discharge that sometimes occurs at the periphery of the base member 40 via the gap when a high-frequency voltage is applied between the shower head 82 and the base member 40.

[0065] In the above-described embodiments and another example, the semiconductor manufacturing apparatus components 10, 10B, 10C, 10D can be used for placement of the focus ring 70, which has: an annular outer peripheral ceramic member 32 having a focus ring placement surface 32a on the upper surface thereof, configured to be arranged on the outer peripheral side of a central ceramic member having a wafer placement surface; and a conductive base member 40 having an outer peripheral support portion joined to the lower surface of the outer peripheral ceramic member 32 and supporting the outer peripheral ceramic member 32, the inner peripheral surface 35 of the outer peripheral ceramic member 32 varying in diameter in the vertical direction, the inner peripheral surface 35 of the outer peripheral ceramic member 32 being a tapered surface that is larger in diameter as it goes upward or smaller in diameter as it goes upward. In this case, the central ceramic member can be the same as the central ceramic member 22 described above, can be different, or can be omitted. In addition, the base member 40 can be the same as the base member 40 described above, can have a central support portion different from the central base member 42 described above, or can not have a central support portion.

[0066] In the above embodiment and another example, a heater electrode for wafer heating can be implanted in the central ceramic member 22. In this case, when it is necessary to heat the wafer W placed on the wafer placement surface 22a to a high temperature, the wafer W can be heated to a desired high temperature by applying electric current to the heater electrode for wafer heating. In addition, a heater electrode for FR heating can be implanted in the outer peripheral ceramic member 32. In this case, when it is necessary to heat the FR 70 placed on the FR placement surface 32a to a high temperature, the FR 70 can be heated to a desired high temperature by applying electric current to the heater electrode for FR heating. In the case where the heater electrode for wafer heating is implanted in the central ceramic member 22 and the heater electrode for FR heating is implanted in the outer peripheral ceramic member 32, it is preferable that each of the heater electrodes be individually temperature-adjustable.

[0067] Industrial Applicability

[0068] The present application can be applied to a member used in a semiconductor manufacturing apparatus, such as an electrostatic chuck heater, an electrostatic chuck, a ceramic heater, and the like.

[0069] Explanation of Symbols

[0070] 10, 10B, 10C, 10D member for semiconductor manufacturing apparatus, 20 ceramic member, 21 ceramic plate, 22 central ceramic member, 22a wafer placement surface, 24 electrode for wafer suction, 25 outer peripheral surface, 26 outer peripheral portion, 32 outer peripheral ceramic member, 32a FR placement surface, 34 electrode for FR suction, 35 inner peripheral surface, 36 inner peripheral portion, 40 base member, 41 screw hole, 42 central base member, 42a central support surface, 44 central coolant flow path, 48 connecting portion, 52 outer peripheral base member, 52a outer peripheral support surface, 54 outer peripheral coolant flow path, 60 joint portion, 62 central joint portion, 67 outer peripheral joint portion, 70 focus ring (FR), 72 step, 77 central insulating film, 78 outer peripheral insulating film, 79 outermost peripheral insulating film, 80 chamber, 82 shower head, 84 setting plate, 86 bolt insertion hole, 87, 88, 89 O-ring, 90 bolt, 110 member for semiconductor manufacturing apparatus, 120 ceramic member, 122 central ceramic member, 125 outer peripheral surface, 125s step, 132 outer peripheral ceramic member, 132a FR placement surface, 135 inner peripheral surface, 140 base member, 142 central base member, 152 outer peripheral base member, 160 joint portion, 162 central joint portion, 167 outer peripheral joint portion, 170 FR.

Claims

1. A component for a semiconductor manufacturing apparatus, wherein, have: A central ceramic component having a wafer mounting surface on its upper surface; An annular peripheral ceramic component, having a focusing ring mounting surface on its upper surface, is disposed on the outer periphery of the central ceramic component; and A conductive base component has a central support portion that is joined to the lower surface of the central ceramic component and supports the central ceramic component, and an outer peripheral support portion that is joined to the lower surface of the outer peripheral ceramic component and supports the outer peripheral ceramic component. The central support portion and the outer peripheral support portion are configured separately or integrally. The diameters of the outer circumferential surface of the central ceramic component and the inner circumferential surface of the outer circumferential ceramic component both change in the vertical direction. The maximum diameter of the outer circumferential surface of the central ceramic component is smaller than the maximum diameter of the inner circumferential surface of the outer ceramic component, but larger than the minimum diameter of the inner circumferential surface of the outer ceramic component.

2. The component for a semiconductor manufacturing apparatus according to claim 1, wherein, The minimum diameter of the outer circumferential surface of the central ceramic component is smaller than the minimum diameter of the inner circumferential surface of the outer circumferential ceramic component.

3. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, In a cross-section obtained by cutting the component of the semiconductor manufacturing apparatus along a direction perpendicular to the wafer placement surface, the outer peripheral surface of the central ceramic component and the inner peripheral surface of the outer peripheral ceramic component are respectively represented as oblique lines.

4. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, The outer peripheral surface of the central ceramic component is a conical surface with a larger diameter as it moves upward.

5. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, The outer peripheral surface of the central ceramic component is a conical surface with a smaller diameter as it moves upward.

6. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, The peripheral support portion is an annular portion disposed around the periphery of the central support portion with an open gap.

7. The component for a semiconductor manufacturing apparatus according to claim 6, wherein, The central ceramic component and the central support are joined by a metal central joint, the outer peripheral surface of which, together with the outer peripheral surface of the central support, is covered by a central insulating film. The outer peripheral ceramic component and the outer peripheral support are joined by a metal outer peripheral joint, the inner peripheral surface of which, together with the inner peripheral surface of the outer peripheral support, is covered by an outer peripheral insulating film.

8. The component for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein, The central ceramic component and the central support are joined by a resin-made central joint, and the outer peripheral ceramic component and the outer peripheral support are joined by a resin-made outer peripheral joint.

9. A component for a semiconductor manufacturing apparatus for mounting a focusing ring, wherein, have: An annular peripheral ceramic component having a focusing ring mounting surface on its upper surface and configured to be disposed on the outer periphery of a central ceramic component having a wafer mounting surface; and A conductive base component having a peripheral support portion that engages with the lower surface of the peripheral ceramic component and supports the peripheral ceramic component. The diameter of the inner circumferential surface of the outer peripheral ceramic component changes in the vertical direction. The inner circumferential surface of the outer peripheral ceramic component is a conical surface that either increases in diameter towards the upper side or decreases in diameter towards the upper side.

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