Systems and methods for improving mechanical strength of low dielectric constant materials

Abstract

An exemplary processing method may include providing a processing precursor to a processing region of a semiconductor processing chamber. A substrate may be received within the processing region. The substrate may include a layer of a silicon-containing material. The method may include forming an inductively coupled plasma effluent of the treatment precursor. The method can include contacting the layer of silicon-containing material with the inductively coupled plasma effluent of the treatment precursor to produce a treated layer of silicon-containing material. The contact may reduce the dielectric constant of the layer of silicon-containing material.

Description

[0001] Related applications for interaction

[0002] This application claims the benefit and priority of U.S. Patent Application No. 18 / 209,719, filed June 14, 2023, entitled “SYSTEMS AND METHODS FOR IMPROVING MECHANICALSTRENGTH OF LOW DIELECTRIC CONSTANT MATERIALS”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This technology relates to semiconductor processing. More specifically, this technology relates to a method for producing low dielectric constant (κ) materials with improved mechanical strength. Background Technology

[0004] Integrated circuits can be fabricated through processes that create complexly patterned layers of material on a substrate surface. Creating patterned material on a substrate requires controlled methods for forming and removing the material. Material properties can affect how components operate and also how the material is removed relative to each other. Plasma-enhanced deposition can produce materials with certain properties. Many of the resulting materials require additional processing to adjust or enhance their properties to provide suitable characteristics.

[0005] Therefore, there is a need for improved systems and methods that can be used to produce high-quality components and structures. These and other needs are addressed by this technology. Summary of the Invention

[0006] Exemplary processing methods may include providing a processing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of silicon-containing material. The method may include forming an inductively coupled plasma effluent of the processing precursor. The method may include contacting the layer of silicon-containing material with the inductively coupled plasma effluent of the processing precursor to produce a processed layer of silicon-containing material. Contact may reduce the dielectric constant of the silicon-containing material layer.

[0007] In some embodiments, the treatment precursor may be or include one or more of diatomic nitrogen (N2), diatomic oxygen (O2), ammonia (NH3), argon (Ar), helium (He), or diatomic hydrogen (H2). The silicon-containing material may be a silicon-oxygen-containing material, a silicon-carbon-oxygen-containing material, or a silicon-carbon-oxygen-hydrogen-containing material. The inductively coupled plasma effluent of the treatment precursor may be formed at a plasma power greater than or about 2,000 W. The treated layer of the silicon-containing material can be characterized by a dielectric constant less than or about 2.9. Contact may increase Si-C-Si crosslinking in the silicon-containing material layer. The treated layer of the silicon-containing material may be characterized by Si-C-Si crosslinking greater than or about 0.4%. Contacting the silicon-containing material layer with the inductively coupled plasma effluent of the treatment precursor may reduce the carbon content in the silicon-containing material layer. The pressure within the treatment region may be maintained at less than or about 50 Torr. The temperature within the treatment region may be maintained at greater than or about 150°C. The method may include exposing a treated layer of silicon-containing material to ultraviolet light to produce a cured layer of silicon-containing material.

[0008] Some embodiments of this technology may cover semiconductor processing methods. The method may include providing a processing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of silicon-containing material. The method may include forming an inductively coupled plasma effluent of the processing precursor at a plasma power greater than or about 2,000 W. The method may include contacting a layer of silicon-containing material with the inductively coupled plasma effluent of the processing precursor to create a processed layer of silicon-containing material. The contact may increase one or more mechanical properties of the silicon-containing material layer.

[0009] In some embodiments, the silicon-containing material may be a silicon-and-oxygen material, a silicon-carbon-and-oxygen material, or a silicon-carbon-oxygen-and-hydrogen material. One or more mechanical properties may include hardness, Young's modulus, dielectric constant, or porosity. The treated layer of the silicon-containing material can be characterized by a second thickness less than a first thickness of the silicon-containing material layer. The method may include exposing the treated layer of the silicon-containing material to ultraviolet light to produce a cured layer of the silicon-containing material. Exposure may reduce the methyl group concentration in the treated layer of the silicon-containing material. The cured layer of the silicon-containing material can be characterized by a methyl group concentration of less than or about 4.5%. The cured layer of the silicon-containing material can be characterized by a dielectric constant of less than or about 2.85. The cured layer of the silicon-containing material can be characterized by a hardness greater than or about 3 GPa.

[0010] Some embodiments of this technology may cover semiconductor processing methods. The methods may include providing a processing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of silicon-containing material. The methods may include forming an inductively coupled plasma effluent of the processing precursor. The methods may include contacting the layer of silicon-containing material with the inductively coupled plasma effluent of the processing precursor to produce a processed layer of silicon-containing material. The methods may include exposing the processed layer of silicon-containing material to ultraviolet light to produce a cured layer of silicon-containing material.

[0011] In some implementations, the processor precursor may include helium (He). The cured layer of silicon-containing material can be characterized by a hardness greater than or about 2 GPa.

[0012] This technology offers several advantages over conventional systems and techniques. For example, desired properties can be obtained by treating and / or exposing a layer of silicon-containing material to UV light. Furthermore, treatment and / or UV light exposure can overcome the conventional trade-offs typically associated with dielectric constant and mechanical strength. These and other embodiments, along with their many advantages and features, are described in more detail below in conjunction with the accompanying drawings. Attached Figure Description

[0013] A further understanding of the nature and advantages of the disclosed technology can be achieved by referring to the remainder of the specification and the accompanying drawings.

[0014] Figure 1 A schematic cross-sectional view of an exemplary plasma processing apparatus according to some embodiments of the present technology is illustrated.

[0015] Figure 2 A schematic cross-sectional view of an exemplary plasma processing apparatus according to some embodiments of the present technology is illustrated.

[0016] Figure 3 A schematic cross-sectional view of an exemplary plasma processing apparatus according to some embodiments of the present technology is illustrated.

[0017] Figure 4 A schematic cross-sectional view of an exemplary plasma processing apparatus according to some embodiments of the present technology is illustrated.

[0018] Figure 5 A schematic cross-sectional view of an exemplary plasma processing apparatus according to some embodiments of the present technology is illustrated.

[0019] Figure 6 An isometric view of an exemplary induction coil according to some embodiments of the present technology is illustrated.

[0020] Figure 7The illustration shows exemplary operations in a processing method according to some embodiments of the present technology.

[0021] Several accompanying drawings are included as schematic diagrams. It will be understood that the drawings are for illustrative purposes and are not considered to be to scale unless specifically stated otherwise. Furthermore, the drawings are provided as schematic diagrams to aid understanding and may not include all aspects or information compared to actual representations, and may include exaggerated material for illustrative purposes.

[0022] In the accompanying drawings, similar parts and / or features may have the same reference numerals. Additionally, parts of the same type may be distinguished by reference numerals followed by letters that differentiate them. If only the first reference numeral is used in this specification, the description applies to any of the similar parts having the same first reference numeral, regardless of the letters. Detailed Implementation

[0023] During back-end-of-line (BEOL) semiconductor processing, low-dielectric-constant materials can play various roles in the fabrication of metallization layers in integrated circuits. These functions can include integrating electrically insulating low-dielectric-constant materials between conductive metallized structures such as interconnects, vias, and other structures. They can also include partially removing the low-dielectric-constant material after the metallization of the structure. A common removal process in BEOL processing is chemical-mechanical-polishing (CMP), which uses a combination of chemical etching and physical abrasion to remove low-dielectric-constant materials from the substrate surface.

[0024] Low-dielectric-constant materials used in BEOL treatment should possess a low dielectric constant relative to undoped silicon oxide and high mechanical stability to resist cracking during the formation of metallic structures and removal via CMP. Unfortunately, these qualities are often strained in low-dielectric-constant materials made from UV-treated silicon-carbon-oxygen materials. In many cases, UV treatment increases the porosity of the material, and increased porosity can reduce its mechanical stability. Furthermore, an increase in the carbon level in the material can lower the dielectric constant and reduce its mechanical stability. This reduction in mechanical stability can be measured by lower hardness and lower Young's modulus, as well as other mechanical properties of the material.

[0025] One approach to addressing these problems is to replace UV processing with other types of processing. In some conventional embodiments, UV processing is eliminated by depositing low-dielectric-constant materials at elevated deposition temperatures, such as above or about 500°C. Unfortunately, such high deposition temperatures can exceed the thermal budgets of many semiconductor manufacturing processes. Higher temperatures can also generate undesirable reactions in the deposited low-dielectric-constant material, such as the formation of hydroxyl groups (-OH) from Si-H and oxygen groups in the deposited material. Relatively small amounts of hydroxyl groups can significantly increase the dielectric constant of low-dielectric-constant materials. In additional conventional methods, UV processing is replaced by plasma processing after the deposition of low-dielectric-constant materials. Although plasma processing can be performed at lower temperatures compared to high-temperature deposition, it is typically performed at higher temperatures than UV processing, such as above or about 400°C. These plasma processing temperatures put pressure on the thermal budgets of some semiconductor manufacturing processes.

[0026] This technology overcomes these problems through an implementation of a semiconductor processing method that includes forming a treated low-dielectric-constant material with increased mechanical stability. Using optional UV processing, such treated low-dielectric-constant materials can be characterized by a dielectric constant of less than or about 3.8. However, unlike conventional techniques, this technology maintains the mechanical stability of the material despite the reduced dielectric constant. The material can be characterized by a high hardness greater than or about 2 GPa and a high Young's modulus greater than or about 4 GPa.

[0027] After describing general aspects of a chamber in which the processing operations discussed below can be performed according to some embodiments of this technology, specific methods may be discussed. It will be understood that this technology is not intended to be limited to the specific materials, chambers, or processes discussed, as the described technology can be used to improve several material forming processes and can be applied to various processing chambers and operations.

[0028] Figure 1A cross-sectional view of an exemplary plasma processing apparatus 100 according to some embodiments of the present technology is illustrated. The figures may illustrate an overview of a system incorporating one or more aspects of the present technology and / or capable of performing one or more deposition or other processing operations according to embodiments of the present technology. Additional details of the plasma processing apparatus 100 or the methods performed may be further described below. The plasma processing apparatus 100 may include a processing chamber 110 and a plasma source 120 coupled to the processing chamber 110. The processing chamber 110 may include a substrate support 112 operable to hold a substrate 114. In an embodiment, the substrate has a thickness of less than about 1 mm. The substrate support 112 may be located near one or more heat sources (e.g., multiple lamps 176) that provide heat to the substrate during processing in the processing chamber 110. Heat may be provided using any suitable heat source (such as one or more lamps, such as one or more rapid heat treatment lamps) or by heating a base (e.g., a base having resistance heating elements embedded therein or coupled thereto). During operation, the heat source enables independent temperature control of the substrate, which will be described in more detail below.

[0029] like Figure 1 As shown, the processing chamber 110 may include a window 162 (such as a dome) and a plurality of lights 176. The plurality of lights 176 may be disposed between the window 162 and the bottom wall of the processing chamber 110. The plurality of lights 176 may be positioned in an array. The plurality of lights 176 may be arranged in a plurality of concentric rings around the center of the processing chamber 110. The plurality of lights 176 may include 100 or more lights, and may include 200 or more lights, such as from 200 to 500 lights, such as from 200 to 300 lights, such as 240 lights, such as from 300 to 400 lights, such as from 400 to 500 lights, or such as 400 lights. The power of each of the plurality of lamps 176 may be from 400 W to 1000 W, such as from 500 W to 800 W, such as from 500 W to 600 W, such as from 600 W to 700 W, such as 645 W, or such as from 700 W to 800 W. The distance from the plurality of lamps 176 to the substrate may be about 50 mm or less, such as from about 5 mm to about 50 mm, such as from about 5 mm to about 20 mm, such as about 12.5 mm, such as from about 20 mm to about 50 mm, or such as about 36.5 mm.

[0030] A controller (not shown) may be coupled to the processing chamber 110 and may be used to control the chamber processes described herein, including controlling a plurality of lamps 176. A substrate support 112 may be disposed between the separation grid 116 and the window 162. A plurality of sensors (not shown) may be disposed near one or more of the lamps 176 and / or the substrate support 112 for measuring the temperature within the processing chamber 110. The plurality of sensors may include one or more infrared pyrometers or miniature pyrometers. In an embodiment, the one or more pyrometers may include two, three, or four pyrometers. In an embodiment, the pyrometers may have a wavelength of 3.3 μm, although generally, commercial pyrometer wavelengths typically vary from about 0.5 μm to about 14 μm. In an embodiment, the pyrometers are bottom pyrometers, meaning that the pyrometers are positioned below the substrate, such as near the plurality of lamps 176.

[0031] The substrate support 112 can be coupled to the shaft 165. The shaft can be connected to an actuator 178, which provides rotational movement of the shaft and the substrate support (about axis A). The actuator 178 can additionally or alternatively provide height adjustment of the shaft 165 during processing.

[0032] The substrate support 112 may include a lifting rod hole 166 disposed therein. The size of the lifting rod hole 166 is adjustable to accommodate a lifting rod 164 for lifting the substrate 114 from the substrate support 112 before or after performing a deposition or processing process. When the substrate 114 is lowered from the processing position to the transfer position, the lifting pin 164 may rest on the lifting pin stop 168.

[0033] Plasma can be generated in plasma source 120 (e.g., in plasma generation region) by induction coil 130, and plasma effluent can flow from plasma source 120 to surface of substrate 114 through orifice 126 provided in separation grid 116, which separates plasma source 120 from processing chamber 110 (downstream region).

[0034] Plasma source 120 may include dielectric sidewalls 122. Plasma source 120 may include a top plate 124. The dielectric sidewalls 122 and top plate 124, integrated with gas injection insert 140, define an interior 125 of the plasma source. The dielectric sidewalls 122 may include any suitable dielectric material, such as quartz. Induction coil 130 may be disposed close to (e.g., adjacent to) the dielectric sidewalls 122 surrounding plasma source 120. Induction coil 130 may be coupled to RF power generator 134 via any suitable mating network 132. Feed gas may be introduced into the interior of the plasma source from gas supply 150. When induction coil 130 is excited with RF power from RF power generator 134, plasma may be generated in plasma source 120. In some embodiments, RF power of about 1 kW to about 15 kW, such as about 3 kW to about 10 kW, may be supplied to induction coil 130. Induction coil 130 may ignite and sustain plasma over a wide range of pressures and flow rates. In some embodiments, the plasma processing apparatus 100 may include a grounded Faraday shield 128 to reduce capacitive coupling between the induction coil 130 and the plasma.

[0035] To improve efficiency, the plasma processing apparatus 100 may include a gas injection insert 140 disposed within a plasma source interior 125. A gas injection channel 151 provides processing gas through an active region 172 into the plasma source interior 125, where reactions between thermionic electrons and the feed gas may occur due to enhanced electron confinement. The enhanced electron confinement region, or active region 172, may be defined radially through the sidewalls of the gas injection insert and the vacuum tube and vertically through the surface 18 of the insert from its bottom edge. The active region 172 provides an electron confinement region within the plasma source interior 125 for efficient plasma generation and maintenance. The gas injection channel 151 may be narrow and prevent plasma from diffusing from the interior of the chamber into the gas injection channel 151. The diameter of the gas injection channel 151 may be about 1 mm or greater, such as about 10 mm or greater, or about 1 mm to about 10 mm. The gas injection insert 140 forces the processing gas through the active region 172 in which plasma can be formed.

[0036] The ability of the gas injection insert 140 to improve the efficiency of the plasma processing apparatus 100 is independent of the material of the gas injection insert 140, as long as the wall in direct contact with free radicals is made of a material with a low free radical recombination rate. For example, in some embodiments, the gas injection insert 140 may be made of a metal (such as aluminum) having a coating configured to reduce surface recombination. Alternatively, the gas injection insert 140 may be a dielectric material (such as quartz) or an insulating material.

[0037] The induction coil 130 can be aligned with the active region such that the top turn of the coil operates above the surface 180 of the gas injection insert 140 and substantially within the active region of the internal volume, while the bottom turn of the coil operates below the surface 180 and substantially outside the active region. The center of the coil can be substantially aligned with the surface 180. Within these boundaries, the coil position can be adjusted to obtain the desired performance. Alignment of the coil with the surface 180 provides improved source efficiency, i.e., control over the generation of the desired chemical substances for plasma processes and their delivery to the substrate, while reducing or eliminating losses. For example, plasma maintenance conditions (the balance between local ion generation and loss) may not be optimal for generating materials for plasma processes. Regarding the delivery of materials to the substrate, efficiency can depend on the volume and wall recombination of such specific materials. Therefore, controlling the alignment of the coil with the surface 180 provides control over the source efficiency of the plasma process.

[0038] In some embodiments, the coil has a short transition region near the lead, and the remainder of the coil turns is parallel to surface 180. In other embodiments, the coil is helical, but the top and bottom turns of the coil can always be defined. In some embodiments, the coil may have 2 to 5 turns.

[0039] In some embodiments, surface 180 can be aligned along axis 184 with a portion of induction coil 130 (e.g., coil circuit 182) using a suitably sized gas injection insert 140 (and top plate 124, which may be a pre-formed portion of the gas injection insert 140) to form plasma source 120. Alternatively, surface 180 may be movable relative to plasma source 120 in a vertical direction V1, while the remaining portion of gas injection insert 140 as part of plasma source 120 is static (e.g., fixed) to provide alignment of surface 180 with a portion of induction coil 130. For example, mechanism 170 may be coupled to any suitable portion of gas injection insert 140 to adjust the position of surface 180 such that a portion of gas injection insert 140 having a first length (L1) is adjusted to a second length (L2). Mechanism 170 may be any suitable mechanism, such as an actuator, e.g., a motor, electric motor, stepper motor, or pneumatic actuator. In some implementations, the length difference between L1 and L2 is about 0.1 cm to about 4 cm, such as about 1 cm to about 2 cm.

[0040] Additionally or alternatively, the gas injection insert 140 may be coupled to a mechanism (such as mechanism 170), and mechanism 170 may be configured to vertically move the entire gas injection insert 140 (e.g., move relative to plasma source 120 along a vertical direction V1) so that surface 180 is aligned with a portion of induction coil 130. Spacers (not shown) may be used to fill gaps between the gas injection insert 140 and another portion of plasma source 120 (such as between top plate 124 and dielectric sidewall 122), such gaps being formed by vertically moving the insert. The spacers may be formed of, for example, a ceramic material (such as quartz).

[0041] Generally, centering the induction coil 130 above surface 180 increases ionization and dissociation efficiency, but reduces the transport efficiency of these materials to the substrate because many materials can recombine on the walls of narrow active regions. Positioning the induction coil 130 below surface 1380 improves plasma delivery efficiency, but reduces plasma generation efficiency.

[0042] The separation grid 116 can be configured to separate a region of the processing chamber 110 from plasma charged particles (ions and electrons) that recombine on the grid, allowing only neutral plasma material to pass through the grid into the processing chamber 110. The holes in the bottom cross-section of the separation grid 116 can have various patterns (e.g., uniform or non-uniform). In some embodiments, the separation grid 116 can be formed of aluminum, anodized aluminum, quartz, aluminum nitride, alumina, tantalum, tantalum nitride, titanium, titanium nitride, or combinations thereof. For example, AlN can facilitate the flux of nitrogen radicals, and conventional separation grids are more prone to nitrogen radical recombination. Similarly, alumina can provide the flux of oxygen or hydrogen radicals, and conventional separation grids are more prone to their recombination. In some embodiments, the separation grid 116 may include a plurality of holes. The plurality of holes may be arranged through the separation grid (e.g., the holes may traverse the thickness of the separation grid). The plurality of holes may have an average diameter from about 4 mm to about 6 mm. In some embodiments, each of the plurality of holes has a diameter from about 4 mm to about 6 mm. In some embodiments, the separating grid 116 has a thickness from about 5 mm to about 10 mm, which defines the hole length. The ratio of the grid thickness to the average diameter of the plurality of holes may be greater than about 1, such as from about 1 to about 3.

[0043] The discharge device 192 may be coupled to the sidewall of the processing chamber 110. In some embodiments, the discharge device 192 may be coupled to the bottom wall of the processing chamber 110 to provide azimuth independence (e.g., if the base is not rotated). If the lamp rotates, the discharge device 192 may be coupled to the sidewall because rotation reduces azimuth dependence.

[0044] Now refer to Figures 2 to 5Describe the various characteristics of ICP sources and plasma processing equipment. Figures 2 to 5 The plasma processing equipment can be combined with Figure 1 The plasma processing device 100 is constructed in a similar manner and can operate in the manner described above for the plasma processing device 100. It will be understood that... Figures 2 to 5 Components of the plasma processing equipment can also be integrated into any other suitable plasma processing equipment in the alternative example embodiments.

[0045] like Figure 2 As shown, the plasma processing apparatus 200 may include a processing chamber 220 having a separation grid (not shown) disposed therein. The plasma processing apparatus 200 may include a plasma source 222 along a vertical direction V. A substrate may be positioned within the processing chamber directly below and at a distance from the grid. Neutral particles from inside the plasma source 230 may flow downward toward the substrate in the processing chamber 220 through the separation grid, and the neutral particles may contact the substrate to perform a process, such as a surface treatment process.

[0046] Multiple induction coils 250 may be disposed at different locations along a vertical direction V on the plasma source 222, for example, such that the induction coils (e.g., induction coils 252 and 254) are spaced apart from each other along the vertical direction V of the plasma source 222. For example, the induction coils 250 may include a first induction coil (peripheral induction coil 252) and a second induction coil (center induction coil 254). The first induction coil (peripheral induction coil 252) may be positioned at a first vertical position along a vertical surface of the dielectric sidewall 232. The second induction coil (center induction coil 254) may be positioned at a second vertical position along a vertical surface of the dielectric sidewall 232. The first vertical position may differ from the second vertical position. For example, the first vertical position may be above the second vertical position. In some embodiments, as described above, a portion of the first induction coil (peripheral induction coil 252) may be substantially aligned with the surface 180 of the insert. The second induction coil (center induction coil 254) may be disposed at the bottom (e.g., lower) portion of the plasma source. The second induction coil may include a magnetic field concentrator 280, thereby allowing the coil to be placed at the bottom of the plasma source, such as... Figure 2 As shown. The use of the magnetic field concentrator 280 can increase the efficiency of plasma generation at the bottom of the source and significantly increase radial control near the substrate (compared to not having a magnetic field concentrator). In some embodiments, the central induction coil 254 may be located at the bottom of the plasma source 222. 1 / 3 height (such as bottom) 1 Set at ( / 4 height).

[0047] Induction coil 250 is operable to generate (or modify) induced plasma within plasma source 230. For example, plasma processing apparatus 200 may include a first radio frequency (RF) power generator 262 (e.g., an RF generator and matching network) coupled to peripheral induction coil 252. Central induction coil 254 may be coupled to a second RF power generator 264 (e.g., an RF generator and matching network). The frequency and / or power of the RF energy applied to the first induction coil (peripheral induction coil 252) via the first RF power generator 262 and to the second induction coil (central induction coil 254) via the second RF power generator 264 may be independent to better control the process parameters of the surface treatment process.

[0048] For example, the frequency and / or power of the RF energy applied by the second RF power generator 264 may be lower than the frequency and / or power of the RF energy applied by the first RF power generator 262. The first RF power generator 262 is operable to excite the peripheral induction coil 252 to generate induced plasma within the plasma source interior 230. Specifically, the first RF power generator 262 may excite the peripheral induction coil 252 with an alternating current (AC) of radio frequency (RF), such that the AC induces alternating magnetic and electric fields in the vicinity of the peripheral induction coil 252 within a volume, which heat electrons to generate induced plasma. In some embodiments, RF power of about 1 kW to about 15 kW, such as about 3 kW to about 15 kW, may be provided to the peripheral induction coil 252. The peripheral induction coil 252 can ignite and sustain plasma over a wide range of pressures and flow rates. The second RF power generator 264 is operable to excite the central induction coil 254 to generate and / or modify the plasma within the plasma source interior 230. Specifically, the second radio frequency (RF) power generator 264 can excite the central induction coil 254 with an alternating current (AC) of radio frequency (RF), causing an induced RF electric field adjacent to the central induction coil 254 within a volume to accelerate electrons to generate plasma. In some embodiments, the central induction coil 254 can be supplied with RF power of about 0.5 kW to about 6 kW, such as about 0.5 kW to about 3 kW. The central induction coil 254 can modify the plasma density in the plasma processing apparatus 200. For example, the central induction coil 254 can tune the radial profile of the plasma to promote additional uniformity of the plasma moving toward the substrate in the processing chamber 220. Since the peripheral induction coil 252 can be further away from the substrate than the central induction coil 254 during use, the plasma and free radicals generated by the peripheral induction coil 252 can promote a dome-shaped profile near the substrate, and the central induction coil 254 can flatten (or even raise the edges) the dome-shaped plasma profile as the plasma approaches the substrate.

[0049] A dielectric sidewall 232 may be positioned between the induction coil 250 and the plasma source 222. The dielectric sidewall 232 may have a generally cylindrical shape. An electrically grounded Faraday shield 234 may be made of metal and / or may be positioned between the induction coil 250 and the dielectric sidewall 232. The Faraday shield 234 may have a cylindrical shape and may be disposed around the dielectric sidewall 232. The grounded Faraday shield 234 may extend the length of the plasma source 222. The dielectric sidewall 232 may contain plasma within the plasma source interior 230, thereby allowing the RF field from the induction coil 250 to pass through the plasma source interior 230, and the grounded Faraday shield 234 may reduce capacitive coupling from the induction coil 250 to the plasma within the plasma source interior 230. In some embodiments, the Faraday shield 234 may be a metal cylinder with slots perpendicular to the coil direction. The vertical slot may be located in the region of the coil (e.g., adjacent to the coil), and at least one vertical end of the coil (above or below the coil) may have a complete current path around the cylinder. The Faraday shield may have any suitable thickness, and / or the slot may have any suitable shape. Near the coil, even when using a helical coil, the slot may be relatively narrow (e.g., about 0.5 cm to about 2 cm) and substantially vertical.

[0050] As described above, each induction coil 250 may be disposed at different locations on the plasma source 222 along the vertical direction V, adjacent to the vertical portion of the dielectric sidewall of the plasma source 222. In this way, each induction coil 250 may be operated to generate (or modify) plasma in the region adjacent to the coil along the vertical surface of the dielectric sidewall 232 of the plasma source 222.

[0051] In some embodiments, the plasma processing apparatus 200 may include one or more peripheral gas injection ports 270 disposed radially outward from the gas injection insert 240 of the plasma source 222. The side profiles of the peripheral gas injection ports 270 and the insert are operable to inject processing gas from the periphery of the plasma source interior 230 directly into an active plasma generation region on a vertical surface adjacent to the dielectric sidewall 232. For example, there may be more than 20 (e.g., between 70 and 200) vertical injection holes disposed through the gas injection insert 240. For example, a first induction coil (peripheral induction coil 252) may be operable to generate plasma in region 272 of the vertical surface near the dielectric sidewall 232. A second induction coil (central induction coil 254) may be operable to generate or modify plasma present in region 275 of the vertical surface near the dielectric sidewall 232. In some embodiments, the gas injection insert 240 may further define an active region for generating plasma on a vertical surface adjacent to the dielectric sidewall 232 within the plasma source interior 230. The top portion of the gas injection insert of this disclosure may have a diameter from about 10 cm to about 15 cm. The bottom portion of the gas injection insert of this disclosure may have a diameter from about 7 cm to about 10 cm.

[0052] The plasma processing apparatus 200 may have an edge gas injection port 290 configured to introduce a gas, the same or different from the gas supplied to the plasma source interior 230 by the peripheral gas injection port 270, into the volume 210. The edge gas injection port 290 may be coupled to a processing chamber 220 and may be the top plate of the processing chamber 220. The edge gas injection port 290 may include a gas chamber 292 (which may be circular), through which gas is introduced via an inlet 294. Gas flows from the gas chamber 292 through one or more openings 296 into the volume 210. The edge gas injection port 290 may provide fine-tuning of the plasma chemistry near the edge of the substrate and / or improvement of plasma uniformity at the substrate. For example, the edge gas injection port 290 may provide modification of the flow rate (of the same gas) and / or modification of the chemistry (chemical reactions between plasma radicals and the fresh feed gas or a different gas).

[0053] The plasma processing apparatus 200 can have improved source tunability compared to known plasma processing apparatuses. For example, the induction coil 250 can be positioned in two locations along the vertical surface of the dielectric sidewall 232, such that the peripheral induction coil 252 near the active plasma generation region functions to ignite and maintain the plasma within the plasma source 230, while the central induction coil 254, placed at the bottom of the source, functions to allow for advantageous source tunability. The low positioning of the second coil is possible due to the use of a magnetic field concentrator 280, which provides coupling between the coil and the plasma, rather than to surrounding metal (e.g., the edge gas injection port 290). In this way, the processing performed on the substrate using the plasma processing apparatus 200 can be more uniform.

[0054] Figure 3 This is a schematic cross-sectional view of a plasma processing apparatus 300. The plasma processing apparatus 300 may include a plasma source 322 and a processing chamber 220. The plasma source 322 may include a gas injection insert 302 having a peripheral gas injection port 270 and a central gas injection port 310. The central gas injection port 310 may be formed by a top plate 318 and a bottom plate 340 forming a gas chamber 316. The bottom plate 340 may have multiple holes (through holes) 312 so that the central gas injection port 310 / gas injection insert 302 can have multiple holes (through holes) 312 for supplying processing gas to a central processing region 314. The dimensions of the central processing region 314 may be provided by multiple portions of the gas injection insert 302 (i.e., the central gas injection port 310 and the sidewalls 320). The sidewalls 320 may have a cylindrical shape and may be made of a dielectric material. For example, the sidewalls 320 may be formed of quartz or alumina. The dimensions of region 272 can be provided by dielectric sidewall 232 and gas injection insert 302 (i.e., peripheral gas injection port 270 and sidewall 324). Sidewall 324 (and generally gas injection insert 302) can have a cylindrical shape. The surface material of sidewall 324 can be a dielectric material or a metal. For example, sidewall 324 can be formed of aluminum and can be covered with quartz or alumina, or have an exposed or anodized aluminum surface. Furthermore, a first Faraday shield (not shown) can be disposed between peripheral induction coil 252 and dielectric sidewall 232. Similarly, a second Faraday shield (not shown) can be disposed between central induction coil 254 and sidewall 320. In some embodiments, sidewall 320 can be quartz or ceramic and / or can have a thickness from about 2.5 mm to about 5 mm.

[0055] The flow rate of the processing gas supplied to region 272 via peripheral gas injection port 270 through conduit 326 can be greater than the flow rate of the processing gas supplied to central processing region 314 via central gas injection port 310. In some embodiments, the ratio of the flow rate of the processing gas supplied via peripheral gas injection port 270 to the flow rate of the processing gas supplied via central gas injection port 310 can be from about 2:1 to about 20:1, such as from about 5:1 to about 10:1. The higher flow rate supplied to region 272 compared to the flow rate to central processing region 314 can provide improved center-edge uniformity of plasma at the substrate surface of the substrate present in processing chamber 220.

[0056] The plasma processing apparatus 300 may further include a peripheral induction coil 252 and a central induction coil 254. The RF power provided through the peripheral induction coil 252 may be greater than the RF power provided through the central induction coil 254. In some embodiments, the ratio of the RF power provided through the peripheral induction coil 252 to the RF power provided through the central induction coil 254 may be from about 2:1 to about 20:1, such as from about 3:1 to about 10:1, or about 5:1. If the central coil is not excited, a secondary plasma source may be used as an auxiliary gas injection that reduces the flux of free radicals and ions / electrons generated through the peripheral induction coil 252 toward the center of the substrate. Because plasma density is typically higher at the center of the substrate during conventional plasma processes, the larger RF power provided to the central induction coil 254 compared to the RF power provided to the peripheral induction coil 252 can promote an increase in plasma density at the edge portions of the substrate, thereby improving plasma uniformity. A plasma separator 304 (cylindrical protrusion) between the central and edge regions can improve the ability to independently control the center-edge plasma.

[0057] The peripheral induction coil 252 and the central induction coil 254 are operable to generate (or modify) induced plasma within the plasma source interior 330. For example, the plasma processing apparatus 300 may include a first radio frequency (RF) power generator 262 (e.g., an RF generator and matching network) coupled to the peripheral induction coil 252. The central induction coil 254 may be coupled to a second RF power generator 264 (e.g., an RF generator and matching network). The frequency and / or power of the RF energy applied to the peripheral induction coil 252 via the first RF power generator 262 and to the central induction coil 254 via the second RF power generator 264 may be adjusted to be the same or different to control the process parameters of the substrate processing procedure.

[0058] For example, the frequency and / or power of the RF energy applied by the second RF power generator 264 may be less than the frequency and / or power of the RF energy applied by the first RF power generator 262. The first RF power generator 262 is operable to excite a peripheral induction coil 252 to generate induced plasma within the plasma source interior 330. Specifically, the first RF power generator 262 may excite the peripheral induction coil 252 with an alternating current (AC) of radio frequency (RF), such that the AC induces an alternating magnetic field within the peripheral induction coil 252, which heats the gas to generate induced plasma. In some embodiments, RF power of about 1 kW to about 15 kW, such as about 3 kW to about 10 kW, is provided to the peripheral induction coil 252.

[0059] The second radio frequency power generator 264 is operable to excite the central induction coil 254 to generate and / or modify induced plasma in the central processing region 314 of the plasma source 322. Specifically, the second radio frequency power generator 264 may excite the central induction coil 254 with an alternating current (AC) of radio frequency (RF), such that the AC induces an alternating magnetic field within the central induction coil 254, which heats a gas to generate and / or modify the induced plasma. In some embodiments, RF power of about 0.3 kW to about 3 kW, such as about 0.5 kW to about 2 kW, may be provided to the central induction coil 254. The central induction coil 254 may modify the plasma in the plasma processing apparatus 300. For example, the central induction coil 254 may tune the radial profile of the plasma to promote additional uniformity of the plasma moving toward the substrate in the processing chamber 220.

[0060] In some embodiments, the plasma processing apparatus 300 may include a peripheral gas injection port 270 operable to inject processing gas along the vertical surface of the dielectric sidewall 232 at the periphery of region 272, thereby defining an active plasma generation region adjacent to the vertical surface of the dielectric sidewall 232. For example, a peripheral induction coil 252 may be operable to generate plasma in region 272 near the vertical surface of the dielectric sidewall 232. A central induction coil 254 may be operable to generate and / or modify the plasma present in the central processing region 314 near the vertical surface of the sidewall 320. In some embodiments, a gas injection insert 302 may further define an active region for generating plasma within the plasma source adjacent to the vertical surfaces of the dielectric sidewall 232 and the sidewall 320.

[0061] In practice, the substrate can provide a certain overlap between the processing plasma formed in the central processing region 314 and the processing plasma formed in region 272. Overall, the peripheral gas injection port 270 / central gas injection port 310 and the peripheral induction coil 252 / central induction coil 254 can provide improved plasma and process uniformity (center-to-edge plasma control) for processing the substrate using plasma. To enhance center-to-edge process control, the gas injection insert 302 may include a plasma separator 304. The plasma separator 304 may be a uniform cylindrical separator coupled to surface 180 (e.g., disposed along the surface).

[0062] Furthermore, in embodiments where the processing gas supplied through the central gas injection port 310 differs from that supplied through the peripheral gas injection port 270, novel plasma chemistry can be obtained compared to conventional plasma processes using conventional plasma sources. For example, advantageous substrate processing not obtainable in conventional plasma processing can be provided. For instance, a unique plasma mixture can be generated by mixing a plasma-generating stream of free radicals and excitation materials (e.g., in some embodiments of region 272) with different plasma streams rich in different types of plasma materials (e.g., different free radicals). Moreover, the formation of such unique plasma chemistry can be achieved in embodiments where surface 180 is aligned with a portion of the peripheral induction coil 252, as described above.

[0063] Figure 4This is a schematic cross-sectional view of a plasma processing apparatus 400. The plasma processing apparatus 400 may include a plasma source 422. The plasma source 422 may include a gas injection insert 402 that can be integrated with a top cover, a peripheral gas injection port 270, and a central gas injection port 410. The central gas injection port 410 may be disposed within the gas injection insert 402 to fluidly couple the central gas injection port 410 to a gas distribution chamber 416 of the gas injection insert 402. The gas distribution chamber 416 may provide an increased diameter (compared to the diameter of the central gas injection port 410) for the processing gas to uniformly distribute it before it enters the discharge region between the bottom of the gas injection insert 402 and the platform 414. Once gas is supplied through the orifice 412, the platform 414 may provide a second gas distribution chamber and facilitate outward flow of gas to the periphery of the plasma source 422 (e.g., into the entry region 272). In some embodiments, material for forming the orifice 412 may be absent, and a larger chamber may be formed. Platform 414 can be coupled to gas injection insert 402 via multiple screws or bolts (not shown). Platform 414 can be made of quartz or ceramic. Platform 414 can have any suitable design, allowing for different materials. Compared to conventional plasma processing equipment, the outward / lateral flow of gas facilitated by platform 414 can influence the flow profile of gas / plasma to the substrate during processing, thereby improving center-to-edge uniformity. Furthermore, this outward flow of gas to the plasma generation region adjacent to plasma source 422 (e.g., region 272) provides benefits. Because a high plasma density can be generated in region 272 adjacent to the top portion of induction coil 130, the electric field does not penetrate far from the coil, so the gas from the central gas injection port 410, gas distribution chamber 416, and platform 414 does not undergo significant ionization or dissociation, but the gas interacts chemically with the high-density free radicals and ions generated in region 272. Both free radicals and ions are chemically active and interact with the new feed gas from the central gas injection port 410, the gas distribution chamber 416, and the platform 414. Compared to conventional plasma sources using plasma processing chambers, the new feed gas, free radicals, and ions can generate new plasma chemicals. For example, if we mix a plasma-generating stream of free radicals and excitation materials (e.g., some embodiments of region 272) with a new gas stream that does not pass through region 272 (e.g., processing gas supplied through the central gas injection port 410 and platform 414 / region 418), a unique mixture of plasmas can be generated. For example, we can obtain H from the plasma of H2 feed gas (e.g., from gas supplied through the peripheral gas injection port 270). + and H -The free radical flow mixes with the oxygen (O2) flow (e.g., from gas supplied through the central gas injection port 410), whereby one can significantly increase the fraction of HO2, HO, H2O2, and other non-equilibrium molecules in the region adjacent to the region 272 associated with the induction coil 130. Furthermore, the formation of these unique plasma chemicals can be achieved in embodiments where the edge of the surface 180 is aligned with a portion of the induction coil 130, for example, as described above.

[0064] In some embodiments, the ratio of the flow rate of the process gas supplied through the peripheral gas injection port 270 to the flow rate of the process gas supplied through the central gas injection port 410 is about 20:1 to about 1:20, such as about 10:1 to about 1:10, such as about 2:1 to about 1:2, such as about 1.2:1 to about 1:1.2, or about 1:1. Such flow rates can provide stoichiometry (e.g., substantially equal molar amounts) of different process gases to provide the desired chemical density in the plasma formed in region 272.

[0065] Furthermore, the outward / lateral flow provided through the central gas injection port 410 and platform 414 / region 418 can modify the flow pattern within the plasma source 422, thereby affecting the delivery profile of free radicals to the substrate. For example, in an embodiment where the processing gas provided through the central gas injection port 410 is substantially the same as the processing gas provided through the peripheral gas injection port 270, more plasma flow can be promoted toward the edge of the substrate, thereby improving the center-edge plasma profile (e.g., providing uniformity of plasma to the substrate).

[0066] Furthermore, in embodiments where the processing gas supplied through the central gas injection port 410 differs from that supplied through the peripheral gas injection port 270, novel plasma chemistry can be obtained compared to conventional plasma processes using conventional plasma sources. For example, advantageous substrate processing not readily available in conventional plasma processing can be provided. For instance, a unique plasma mixture can be generated by mixing a plasma-generating stream of free radicals and excitation materials (e.g., in some embodiments of region 272) with a novel gas stream that does not pass through a plasma region containing hot electrons. For example, an N-radical stream obtained from a plasma from a N2 feed gas can be mixed with a nitrogen (N2), hydrazine, and / or NH3 stream, where a large number of different free radicals, such as NH and / or NH2 molecules, can be generated in a region downstream of region 272 of the plasma processing apparatus 400. Moreover, the formation of such unique plasma chemistry can be achieved in embodiments utilizing the alignment of surface 180 with a portion of the peripheral induction coil 252, for example, as described above.

[0067] Figure 5 This is a schematic cross-sectional view of a plasma processing apparatus 500. The plasma processing apparatus 500 may include a plasma source 522 and a processing chamber 220. The plasma source 522 may include a gas injection insert 240, a peripheral gas injection port 270, a central gas injection port 510, and a top plate 124. The central gas injection port 510 may be disposed close to (e.g., adjacent to) a wall 550. The central gas injection may include a central gas injection port 510 having a generally cylindrical gas chamber / manifold and a plurality of angled outlets 512 uniformly diffused along the gas chamber. The gas injection insert 240 may also have a generally cylindrical shape. The central gas injection port 510 may have angled outlets 512 to facilitate outward / lateral flow of the processing gas supplied through the central gas injection port 510 and the angled outlets 512. The angled outlet 512 may have an angle of about 0 degrees to about 90 degrees, such as about 30 degrees to about 60 degrees, such as about 45 degrees, relative to a vertical axis (such as vertical axis 186, which is parallel to the axial centerline of plasma processing device 500 and / or the axial centerline of plasma source 522).

[0068] Compared to conventional plasma processing equipment, the outward / lateral flow of gas facilitated by the angled outlet 512 can influence the flow profile of gas / plasma to the substrate during processing, thereby improving center-to-edge uniformity. Furthermore, because a high plasma density can be generated in the region adjacent to the induction coil 130 (and the electric field does not penetrate areas far from the coil), novel plasma chemistry can be obtained compared to conventional plasma processes using plasma processing chambers. For example, a unique plasma mixture can be generated by mixing a plasma-generating flow of free radicals and excitation materials (e.g., in some embodiments of region 272) with a novel gas flow that does not pass through the plasma region containing hot electrons (e.g., processing gas supplied through the central gas injection port 510 and the angled outlet 512). For example, an N-radical stream obtained from a plasma of N2 feed gas (e.g., gas supplied through peripheral gas injection port 270) can be mixed with N2, hydrazine, and / or NH3 streams (e.g., gas supplied through central gas injection port 510), wherein molecular radicals, such as NH, NH2 molecules, etc., can be generated in region 272 adjacent to induction coil 130. Furthermore, the formation of such unique plasma chemical substances can be achieved in embodiments utilizing induction coil 130 aligned with surface 180, as described above.

[0069] In some embodiments, the ratio of the flow rate of the process gas supplied through the peripheral gas injection port 270 to the flow rate of the process gas supplied through the central gas injection port 510 may be from about 2:1 to about 1:2, such as from about 1.2:1 to about 1:1.2, or about 1:1. Such flow rates can provide stoichiometry (e.g., substantially equal molar amounts) of different process gases to provide the desired chemical density in the plasma formed in region 272.

[0070] Furthermore, the outward / lateral flow provided through the central gas injection port 510 and the angled outlet 512 can modify the flow pattern within the plasma source 522, thereby affecting the delivery profile of free radicals to the substrate. For example, in an embodiment where the processing gas provided through the central gas injection port 510 is substantially the same as the processing gas provided through the peripheral gas injection port 270, more plasma flow can be promoted toward the edge of the substrate, thereby improving the center-edge plasma profile (e.g., providing uniformity of plasma to the substrate).

[0071] also, Figure 5 The gas injection insert 240 may have a fixed edge at surface 180, thereby defining the active region of the axis 184 (or alignment level) of the induction coil 130. The induction coil 130 may be substantially aligned with surface 180 such that the top turn of the coil is positioned above axis 184 (surface 180) and the bottom turn is positioned below the edge. The position of the coil can be further adjusted within this range based on process results. Alignment of the coil's vertical center with surface 180 provides improved source efficiency, i.e., control over the generation of the desired chemical substance for plasma processes and its delivery to the substrate with minimal loss. For example, plasma maintenance conditions (the balance between local ion generation and loss) may not be suitable for the material used in plasma processes. Regarding the delivery of the material to the substrate, efficiency may depend on the volume and wall recombination of such particular material. Therefore, controlling the alignment of the induction coil 130 with surface 180 (the edge) provides control over the source efficiency of the plasma process.

[0072] In some embodiments, the bottom surface of the gas injection insert 240 can be aligned with the surface 180 of the insert defining the active region of the coil using a suitably sized gas injection insert 240 (this alignment is horizontally illustrated as axis 184) to form a plasma source 120. Alternatively, the bottom surface of the gas injection insert 240 can utilize the movable central portion of the gas injection insert 240 (e.g., Figure 5The gas injection insert 240 (as shown) is made flexible, while the remaining portion of the gas injection insert 240 can be fixed as part of the plasma source 120. For example, mechanism 170 can be electronically coupled to the central portion of the gas injection insert 240 to adjust the central portion, such that the central portion of the gas injection insert 240 having a first position is adjusted to a second position. In some embodiments, the positional difference between the first position and the second position can be from about 0.1 cm to about 10 cm, such as from about 1 cm to about 2 cm. Mechanism 170 can be any suitable mechanism, such as an actuator, for example a motor, electric motor, stepper motor, or pneumatic actuator. The space between the central portion of the gas injection insert 240 and the top plate 124 can be increased or decreased by the movement of mechanism 170.

[0073] Generally speaking, moving the central portion of the gas injection insert 240 downward along the vertical direction V will reduce the flow of active material toward the center of the substrate and thus reduce the processing rate of the center relative to the edge, while moving the central portion upward will increase the processing rate of the center relative to the edge.

[0074] Although it has been described independently Figures 1 to 5 It will be understood that one or more embodiments from one accompanying drawing can be advantageously integrated with one or more embodiments from a different accompanying drawing. For example, Figure 1 Gas injection insert 140 or Figure 2 The gas injection insert 240 is Figure 3 Gas injection insert 302 Figure 4 Gas injection insert 402, or Figure 5 The configuration of the gas injection insert 240 and the central gas injection port 510. As another non-limiting example, the edge gas injection port 290 can be used as... Figure 3 300 plasma processing equipment Figure 4 Plasma processing equipment 400, and Figure 5 Embodiments of the plasma processing apparatus 500 are included.

[0075] Figure 6 An induction coil 130 that can be used with a plasma source is shown. The induction coil 130 may include multiple coil loops, including coil loop 182. As shown, the induction coil 130 may include three complete coils, but more or fewer coils are contemplated. For example, for an RF frequency of 13.56 MHz, the induction coil may include 2-6 complete turns. For lower RF frequencies, more turns may be utilized.

[0076] Any of the plasma processing apparatus or processing chambers discussed above can be used in some embodiments of this technology for processing methods that may include the formation or processing of materials for semiconductor structures. It will be understood that the described chambers are not intended to be limiting, and any chamber that can be configured to perform the described operations can be used similarly. Figure 7 Exemplary operations in a processing method 700 according to some embodiments of the present technology are illustrated. Method 700 may be performed in various processing chambers and on one or more hosts or tools, including the processing chambers described above. Method 700 may include several optional operations, which may or may not be specifically associated with some embodiments of the method according to the present technology. For example, numerous operations are described to provide a broader range of structure formations, but such operations are not critical to the technology or may be performed by easily understood alternative methods.

[0077] Method 700 may include additional operations prior to the operations listed at the beginning. For example, additional processing operations may include forming a structure on a substrate, which may include both forming and removing material. For example, a transistor structure, a memory structure, or any other structure may be formed. The prior processing operations may be performed in a chamber in which method 700 is performed, or the processing prior to delivering the substrate to one or more semiconductor processing chambers in which method 700 is performed may be performed in one or more other processing chambers. In any case, method 700 may, as appropriate, include a processing region of delivering the semiconductor substrate to a semiconductor processing chamber (such as processing chamber 110 described above, any other processing chambers discussed above, or other processing chambers that may include components as described above). The substrate may be deposited on a substrate support, which may be a base, such as substrate support 112, and may be placed in the processing region of the processing chamber.

[0078] The substrate on which several operations have been performed may be a substrate comprising one or more layers of material deposited thereon. The substrate may be any number of materials used in semiconductor processing. The substrate material may be or include silicon, germanium, dielectric materials including silicon oxide or silicon nitride, metallic materials, or any combination thereof. In embodiments, a layer of silicon-containing material may be disposed on the substrate. The silicon-containing material may be a silicon-oxygen-containing material, a silicon-carbon-oxygen-containing material, or a silicon-carbon-oxygen-hydrogen-containing material. Furthermore, multiple layers of silicon-containing material may be present, and / or one or more features may be formed in one or more layers of material. Features (if present) may be characterized by any shape or configuration. In some embodiments, features may include trench structures or holes.

[0079] In some embodiments, method 700 may include optional processing operations, such as pretreatment, which may be performed to prepare the surface of the substrate for processing. Once prepared, at operation 705, method 700 may include providing one or more precursors to a semiconductor processing chamber housing the substrate. The precursors may include one or more processing precursors. Processing precursors that may be used during method 700 may include, but are not limited to, diatomic nitrogen (N2), diatomic oxygen (O2), ammonia (NH3), argon (Ar), helium (He), or diatomic hydrogen (H2), and any other diluent or carrier gas, such as an inert gas or other gas delivered with the processing precursor.

[0080] In operation 710, an inductively coupled plasma effluent of the processing precursor can be formed. The plasma effluent can be formed within a plasma region that can be separated from the processing region by a separation grid, allowing the plasma effluent to be formed in a region remote from the substrate. For example, in some embodiments, as previously described, the inductively coupled plasma effluent can be formed within the plasma region by applying plasma power to an induction coil.

[0081] The plasma applied during processing can be of relatively high power, which increases dissociation and provides a processed plasma effluent with high radical density and high flux. Thus, in some embodiments, the plasma power source can deliver plasma power greater than or about 1,000 W to the induction coil, and can deliver power greater than or about 1,500 W, greater than or about 2,000 W, greater than or about 2,500 W, greater than or about 3,000 W, greater than or about 3,500 W, greater than or about 4,000 W, greater than or about 4,500 W, greater than or about 5,000 W, greater than or about 5,500 W, greater than or about 6,000 W, or greater. At plasma power less than, for example, 1,000 W, the radical density and flux of the plasma effluent may be insufficient to process the silicon-containing material layer on the substrate to increase the desired mechanical properties of the material.

[0082] In operation 715, method 700 may include contacting a layer of silicon-containing material with an inductively coupled plasma effluent of a processing precursor to create a processed layer of silicon-containing material. During operation 715, the inductively coupled plasma effluent of the processing precursor may diffuse into the layer of silicon-containing material on the substrate. The internal energy from the inductively coupled plasma effluent of the processing precursor may modify the layer of silicon-containing material to increase the desired mechanical properties of the layer of silicon-containing material. For example, the inductively coupled plasma effluent of the processing precursor may diffuse into the layer of silicon-containing material on the substrate and densify the material while modifying the bonds in the material.

[0083] In an embodiment, the processing at operation 715 can produce a treated layer of silicon-containing material, which can be characterized by increased porosity and / or decreased dielectric constant, as well as increased other mechanical properties compared to the deposited material. Furthermore, due to densification, the treated layer of silicon-containing material can be characterized by a second thickness less than a first thickness of the silicon-containing material layer. The first thickness of the silicon-containing material layer may be the thickness of the deposited material.

[0084] In optional operation 720, method 700 may include exposing a treated layer of silicon-containing material to ultraviolet (UV) light to produce a cured layer of silicon-containing material. Optional operation 720 may include directing energy in the form of UV light toward a substrate to cure the treated layer of silicon-containing material on the substrate. In some embodiments, the exposure to UV light may be performed in a processing chamber for processing the silicon-containing material layer. In additional embodiments, the substrate having the treated layer of silicon-containing material may be moved to another semiconductor processing chamber where the exposure to UV light is performed.

[0085] In one embodiment, exposure to UV light in optional operation 720 can produce a cured layer of silicon-containing material, which can be characterized by a further increase in porosity and / or a further decrease in dielectric constant compared to the deposited material and / or the treated material, as well as increased other mechanical properties.

[0086] The processing in operation 715 and / or the exposure to UV light in optional operation 720 can be performed at a substrate or base temperature greater than or about 150°C. Therefore, in some embodiments, the processing in operation 715 and / or the exposure to UV light in optional operation 720 can occur at temperatures greater than or about 200°C, greater than or about 250°C, greater than or about 300°C, greater than or about 350°C, greater than or about 400°C, greater than or about 450°C, or higher. Furthermore, the temperature can be maintained at less than or about 500°C, which meets thermal budget requirements. In embodiments, the temperature can be maintained at less than or about 450°C, less than or about 400°C, less than or about 350°C, less than or about 300°C, less than or about 250°C, less than or about 200°C, less than or about 150°C, or lower.

[0087] The processing in operation 715 and / or the exposure to UV light in optional operation 720 may be performed at pressures less than or about 500 Torr, such as less than or about 450 Torr, less than or about 400 Torr, less than or about 350 Torr, less than or about 300 Torr, less than or about 250 Torr, less than or about 200 Torr, less than or about 150 Torr, less than or about 100 Torr, less than or about 75 Torr, less than or about 50 Torr, less than or about 25 Torr, less than or about 10 Torr, less than or about 8 Torr, less than or about 6 Torr, less than or about 5 Torr, less than or about 4 Torr, less than or about 3 Torr, less than or about 2 Torr, less than or about 1 Torr, or less. Operation 715 and optional operation 720 may be performed under the same or similar processing conditions. For example, temperature and / or pressure may be maintained for both the processing in operation 715 and the exposure to UV light in optional operation 720. Conversely, the temperature and / or pressure can be modified or adjusted between operations of method 700.

[0088] Following the processing in operation 715 and / or UV light exposure in optional operation 720, the treated and / or cured layer of the silicon-containing material can be characterized by increased mechanical properties. In embodiments, compared to the deposited material, the treated and / or cured layer of the silicon-containing material can be characterized by increased refractive index (RI), decreased methyl group concentration, increased Si-C-Si and / or Si-O-Si crosslinking, as well as decreased dielectric constant, increased porosity, increased hardness, and / or increased Young's modulus.

[0089] In embodiments, the treated and / or cured silicon-containing material can be characterized by an RI greater than or about 1.48, and can be characterized by an RI greater than or about 1.49, greater than or about 1.50, greater than or about 1.51, greater than or about 1.52, greater than or about 1.53, greater than or about 1.54, greater than or about 1.55, greater than or about 1.56, greater than or about 1.57, greater than or about 1.58, greater than or about 1.59, or greater.

[0090] The processed and / or cured layers of silicon-containing materials can be characterized by the atomic (i.e., molecular) percentage of methyl groups (-CH3) relative to silicon oxide (SiO) groups in the material, such as by measuring the area of ​​the infrared absorption peaks belonging to these groups. The processed and / or cured layers of silicon-containing materials can be characterized by a methyl concentration of less than or about 6%, and can be characterized by methyl concentrations of less than or about 5%, less than or about 4.5%, less than or about 4%, less than or about 3.5%, less than or about 3%, less than or about 2.5%, less than or about 2%, less than or about 1.5%, or even lower. The percentage of methyl concentration can be a percentage per unit area obtained from the infrared absorption peaks (e.g., comparing the methyl area to the SiO area).

[0091] Similarly, the treated and / or cured layer of silicon-containing materials can be characterized by the percentage of Si-C-Si crosslinks relative to the atomic (i.e., molecular) percentages of silicon oxide (SiO) groups in the material, such as by measuring the area of ​​the infrared absorption peaks belonging to these groups. The treatment in operation 715 and / or exposure to UV light in optional operation 720 can increase the Si-C-Si crosslinks in the material. In embodiments, the treated and / or cured layer of silicon-containing materials can be characterized by more than or about 0.4% Si-C-Si crosslinks, and can be characterized by more than or about 0.42%, more than or about 0.44%, more than or about 0.46%, more than or about 0.48%, more than or about 0.5%, more than or about 0.52%, more than or about 0.54%, more than or about 0.56%, more than or about 0.58%, more than or about 0.6%, more than or about 0.62%, or greater Si-C-Si crosslinks. The percentage of Si-C-Si crosslinks can be obtained from the percentage of the unit area of ​​the infrared absorption peak (e.g., comparing the Si-C-Si crosslink area with the SiO area).

[0092] In the embodiments, the dielectric constant of the silicon-containing material after treatment and / or curing may be less than or about 4, and may be less than or about 3.8, less than or about 3.6, less than or about 3.5, less than or about 3.5, less than or about 3.4, less than or about 3.3, less than or about 3.2, less than or about 3.1, less than or about 3.0, less than or about 2.95, less than or about 2.9, less than or about 2.85, less than or about 2.8, less than or about 2.75, less than or about 2.7, less than or about 2.65, less than or about 2.6, less than or about 2.55, less than or about 2.5, or even smaller.

[0093] The hardness of the treated and / or cured silicon-containing material may be greater than or about 2 GPa, and may be greater than or about 2.2 GPa, greater than or about 2.4 GPa, greater than or about 2.6 GPa, greater than or about 2.8 GPa, greater than or about 3 GPa, greater than or about 3.2 GPa, greater than or about 3.4 GPa, greater than or about 3.6 GPa, greater than or about 3.8 GPa, greater than or about 4 GPa, greater than or about 4.5 GPa, greater than or about 5 GPa, greater than or about 5.5 GPa, greater than or about 6 GPa, greater than or about 6.5 GPa, greater than or about 7 GPa, greater than or about 7.5 GPa, greater than or about 8 GPa, greater than or about 9 GPa, or greater. Furthermore, the Young's modulus of the treated and / or cured silicon-containing material may be greater than or about 4 GPa, greater than or about 4.5 GPa, greater than or about 5 GPa, greater than or about 5.5 GPa, or greater.

[0094] In the foregoing description, several details have been set forth for illustrative purposes to provide an understanding of various embodiments of the present technology. However, it will be apparent to those skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0095] Given that several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, several well-known processes and elements have not been described to avoid unnecessarily obscuring the technology. Therefore, the above description should not be considered as limiting the scope of the technology. Additionally, methods or processes may be described sequentially or in steps, but it will be understood that operations may be performed simultaneously or in a different order than those listed.

[0096] Where a range of values ​​is provided, it will be understood that, unless the context explicitly indicates otherwise, the minimum fraction of each mediating value to the lower limit unit between the upper and lower limits of that range is also specifically disclosed. This encompasses any narrower range between any mentioned value or mediating value not mentioned in the mentioned range and any other mentioned value or mediating value in the mentioned range. The upper and lower limits of such narrower ranges may independently include or exclude them, and each range (where any limit, no limit, or both limit values ​​are included in the narrower range) is also covered by the technique, but excludes any specifically excluded limit values ​​in the mentioned range. Where a mentioned range includes one or two limit values, the range excluding any one or both of those included limit values ​​is also included.

[0097] As used herein and in the appended claims, unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” include plural references. Thus, for example, reference to “a processing precursor” includes a plurality of such precursors, and reference to “the layer of the silicon-containing material” includes reference to one or more materials and their equivalents known to those skilled in the art, etc.

[0098] Furthermore, when used in this specification and the following claims, the terms “comprise(s)”, “comprising”, “contain(s)”, “containing”, “include(s)”, and “including” are intended to specify the presence of the mentioned feature, integer, component, or operation, but such terms do not exclude the presence or addition of one or more other features, integers, components, operations, actions, or groups.

Claims

1. A semiconductor processing method, the semiconductor processing method comprising: A processing precursor is provided to a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate comprises a layer of silicon-containing material; The inductively coupled plasma effluent forming the processing precursor; and The silicon-containing material layer is brought into contact with the inductively coupled plasma effluent of the processing precursor to produce a processed layer of the silicon-containing material, wherein the contact reduces the dielectric constant of the silicon-containing material layer.

2. The semiconductor processing method of claim 1, wherein the processing precursor comprises one or more of diatomic nitrogen (N2), diatomic oxygen (O2), ammonia (NH3), argon (Ar), helium (He), or diatomic hydrogen (H2).

3. The semiconductor processing method according to claim 1, wherein the silicon-containing material comprises a silicon-and-oxygen material, a silicon-carbon-and-oxygen material, or a silicon-carbon-oxygen-and-hydrogen material.

4. The semiconductor processing method of claim 1, wherein the inductively coupled plasma effluent of the processing precursor is formed at a plasma power greater than or about 2,000 W.

5. The semiconductor processing method of claim 1, wherein the processed layer of the silicon-containing material is characterized by a dielectric constant of less than or about 2.

9.

6. The semiconductor processing method of claim 1, wherein the contact increases Si-C-Si crosslinking in the layer of the silicon-containing material, and wherein the processed layer of the silicon-containing material is characterized by more than or about 0.4% Si-C-Si crosslinking.

7. The semiconductor processing method of claim 1, wherein contacting the layer of the silicon-containing material with the inductively coupled plasma effluent of the processing precursor reduces the carbon content in the layer of the silicon-containing material.

8. The semiconductor processing method of claim 1, wherein the pressure within the processing region is maintained at less than or about 50 Torr.

9. The semiconductor processing method of claim 1, wherein the temperature within the processing region is maintained at a temperature greater than or about 150°C.

10. The semiconductor processing method of claim 9, further comprising: The treated layer of the silicon-containing material is exposed to ultraviolet light to produce a cured layer of the silicon-containing material.

11. A semiconductor processing method, the semiconductor processing method comprising: A processing precursor is provided to a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate comprises a layer of silicon-containing material; The inductively coupled plasma effluent of the processing precursor is formed at a plasma power greater than or about 2,000 W; and The silicon-containing material layer is brought into contact with the inductively coupled plasma effluent of the processing precursor to produce a processed layer of the silicon-containing material, wherein the contact increases one or more mechanical properties of the silicon-containing material layer.

12. The semiconductor processing method of claim 11, wherein the silicon-containing material comprises a silicon-and-oxygen material, a silicon-carbon-and-oxygen material, or a silicon-carbon-oxygen-and-hydrogen material.

13. The semiconductor processing method of claim 11, wherein the one or more mechanical properties include hardness, Young's modulus, dielectric constant, or porosity.

14. The semiconductor processing method of claim 11, wherein the processed layer of the silicon-containing material is characterized by a second thickness less than a first thickness of the layer of the silicon-containing material.

15. The semiconductor processing method of claim 11, further comprising: The treated layer of the silicon-containing material is exposed to ultraviolet light to produce a cured layer of the silicon-containing material, wherein the exposure reduces the methyl concentration in the layer of the treated layer of the silicon-containing material, and wherein the cured layer of the silicon-containing material is characterized by a methyl concentration of less than or about 4.5%.

16. The semiconductor processing method of claim 15, wherein the cured layer of the silicon-containing material is characterized by a dielectric constant of less than or about 2.

85.

17. The semiconductor processing method of claim 15, wherein the cured layer of the silicon-containing material is characterized by a hardness greater than or about 3 GPa.

18. A semiconductor processing method, the semiconductor processing method comprising: A processing precursor is provided to a processing region of a semiconductor processing chamber, wherein a substrate is housed within the processing region, and wherein the substrate comprises a layer of silicon-containing material; The inductively coupled plasma effluent that forms the processing precursor; The silicon-containing material layer is brought into contact with the inductively coupled plasma effluent of the processing precursor to produce the processed layer of the silicon-containing material; and The treated layer of the silicon-containing material is exposed to ultraviolet light to produce a cured layer of the silicon-containing material.

19. The semiconductor processing method of claim 18, wherein the processing precursor comprises helium (He).

20. The semiconductor processing method of claim 18, wherein the cured layer of the silicon-containing material is characterized by a hardness greater than or about 2 GPa.

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