Semiconductor device

Abstract

The semiconductor device includes a first lead, a semiconductor element, and a sealing resin. The first lead has a pad portion and a first support portion. The first support portion has a first surface, a second surface, and a first end surface. The pad portion is exposed from a bottom surface of the sealing resin. The size of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the size of the sealing resin in the first direction z from the top surface of the sealing resin to the first surface. The dimension of the second surface in the second direction is 50% or more of the dimension of a region of the bottom surface that is adjacent to the pad section on one side in the second direction and overlaps the second surface when viewed in the first direction.

Description

TECHNICAL FIELD

[0001] The present application relates to a semiconductor device. BACKGROUND

[0002] A semiconductor device in a resin-sealed form is widely known as disclosed in Patent Literature 1. The semiconductor device disclosed in Patent Literature 1 has a semiconductor element, a first lead wire in conduction with the semiconductor element, a second lead wire on which the semiconductor element is mounted, and a sealing resin covering the semiconductor element. The first lead wire and the second lead wire each protrude from the sealing resin.

[0003] The second lead wire of the semiconductor device disclosed in Patent Literature 1 has a second land portion on which the semiconductor element is mounted. A protrusion is provided at the second land portion. The protrusion protrudes in a direction orthogonal to a normal direction of a surface of the second land portion facing the semiconductor element. Here, in the structure of the semiconductor device, the protrusion provided at the second land portion is sometimes used as a support member that links the lead frame and the second lead wire. In the case of the semiconductor device, the protrusion needs to be cut off from the lead frame after the sealing resin is formed. At this time, since a load acts on the second lead wire including the protrusion, a greater stress is concentrated at a portion of the sealing resin in contact with the second lead wire. Thus, it is likely that a crack is generated in the sealing resin.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT LITERATURE

[0006] Patent Literature 1: Japanese Patent Application Publication No. 2018-60908 SUMMARY

[0007] PROBLEMS TO BE SOLVED BY THE INVENTION

[0008] One object of the present application is to provide a semiconductor device in which stress concentration of a sealing resin due to cutting of a lead wire is reduced as compared with the prior art. In particular, the present disclosure, in view of the above-described circumstances, has an object to provide a semiconductor device in which stress concentration of a sealing resin due to cutting of a lead wire is reduced at the time of device manufacturing.

[0009] A semiconductor device provided by the first aspect of the present disclosure includes a first lead having a land portion having a mounting surface on one side in a first direction and a first support portion connected to one side of the land portion in a second direction orthogonal to the first direction, a semiconductor element joined to the mounting surface, and a sealing resin covering a portion of the first lead and the semiconductor element. The sealing resin has a top surface facing the same side as the mounting surface in the first direction and a bottom surface facing the opposite side of the top surface in the first direction, and the land portion is exposed. The first support portion has a first surface facing the same side as the top surface in the first direction and covered by the sealing resin, a second surface facing the opposite side of the first surface in the first direction and covered by the sealing resin, and a first end surface facing one side in the second direction and exposed from the sealing resin. A dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than a dimension of the sealing resin in the first direction from the top surface to the first surface. A dimension of the second surface in the second direction is 50% or more of a dimension of the bottom surface in the second direction on one side in the second direction adjacent to the land portion and overlapping the second surface when viewed in the first direction.

[0010] Other features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 is a perspective view of a semiconductor device of the first embodiment of the present disclosure.

[0012] Figure 2 is a plan view of the semiconductor device shown in Figure 1 .

[0013] Figure 3 is a plan view corresponding to Figure 2 , shown transparently through the sealing resin.

[0014] Figure 4 is a bottom view of the semiconductor device shown in Figure 1 .

[0015] Figure 5 is a bottom view corresponding to Figure 4 , shown transparently through the sealing resin.

[0016] Figure 6 is a front view of the semiconductor device shown in Figure 1 .

[0017] Figure 7 is a front view of the semiconductor device shown in Figure 1A right side view of the semiconductor device shown.

[0018] Figure 8 is Figure 1 A left side view of the semiconductor device shown.

[0019] Figure 9 is a sectional view along the IX-IX line of Figure 3

[0020] Figure 10 is a sectional view along the X-X line of Figure 3

[0021] Figure 11 is a sectional view along the XI-XI line of Figure 3

[0022] Figure 12 is a partial enlarged view of Figure 3

[0023] Figure 13 is a partial enlarged view of Figure 9

[0024] Figure 14 is a partial enlarged sectional view of a semiconductor device of a first modification example of the first embodiment of the present disclosure.

[0025] Figure 15 is a partial enlarged sectional view of a semiconductor device of a second modification example of the first embodiment of the present disclosure.

[0026] Figure 16 is a partial enlarged sectional view of a semiconductor device of a third modification example of the first embodiment of the present disclosure.

[0027] Figure 17 is a sectional view illustrating a manufacturing process of the semiconductor device shown. Figure 1

[0028] is a sectional view illustrating a manufacturing process of the semiconductor device shown. Figure 18 Figure 1 is a sectional view illustrating a manufacturing process of the semiconductor device shown.

[0029] Figure 19 Figure 1 is a sectional view illustrating a manufacturing process of the semiconductor device shown.

[0030] Figure 20 is a sectional view illustrating a manufacturing process of the semiconductor device shown. Figure 1

[0031] is a sectional view illustrating a manufacturing process of the semiconductor device shown. Figure 21 Figure 16 is a sectional view illustrating a manufacturing process of the semiconductor device shown.

[0032] ​​​​​​​​Figure 22 is a bottom view of the semiconductor device of the second embodiment of the present disclosure, shown through a sealing resin.

[0033] Figure 23 is a sectional view of the semiconductor device shown in Figure 22 , corresponding to Figure 9 .

[0034] Figure 24 is a sectional view of the semiconductor device shown in Figure 22 , corresponding to Figure 10 .

[0035] Figure 25 is a partial enlarged view of Figure 22 .

[0036] Figure 26 is a partial enlarged view of Figure 23 .

[0037] Figure 27 is a partial enlarged sectional view of the semiconductor device of a modification of the second embodiment of the present disclosure.

[0038] Figure 28 is a sectional view illustrating a manufacturing process of the semiconductor device shown in Figure 22 .

[0039] Figure 29 is a sectional view illustrating a manufacturing process of the semiconductor device shown in Figure 22 .

[0040] Figure 30 is a sectional view illustrating a manufacturing process of the semiconductor device shown in Figure 22 .

[0041] Figure 31 is a sectional view illustrating a manufacturing process of the semiconductor device shown in Figure 27 .

[0042] Figure 32 is a sectional view illustrating a manufacturing process of the semiconductor device shown in Figure 27 . DETAILED DESCRIPTION

[0043] The detailed description of the present disclosure is made based on the drawings.

[0044] First Embodiment:

[0045] Based on Figures 1-13A10 of the first embodiment of the present disclosure will be described. The semiconductor device A10 includes the semiconductor element 10, the first lead 20, the plurality of second leads 30, the plurality of wires 40, and the sealing resin 50. The semiconductor device A10 has a package form of SOP (Small Outline Package). However, the package form of the semiconductor device A10 is not limited to the SOP. Here, for convenience of understanding, Figure 3 and Figure 5 The sealing resin 50 is indicated by a broken line (a two-dot chain line). In Figure 3 and Figure 5 the outline of the sealing resin 50 is indicated by an imaginary line (a two-dot chain line).

[0046] In the description of the semiconductor device A10, for convenience, the normal direction of the mounting surface 211 of the land portion 21 described later is referred to as a "first direction z". One direction orthogonal to the first direction z is referred to as a "second direction x". A direction orthogonal to the first direction z and the second direction x, respectively, is referred to as a "third direction y".

[0047] As shown in Figures 9-11 , the sealing resin 50 covers the semiconductor element 10, a part of the first lead 20, a part of each of the plurality of second leads 30, and the plurality of wires 40. The sealing resin 50 is an insulator. The sealing resin 50 is composed of, for example, a material including an epoxy resin. The sealing resin 50 has a rectangular shape when viewed in the first direction z.

[0048] As shown in Figures 6-8 , the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two third side surfaces 55.

[0049] As shown in Figures 6-8 , the top surface 51 faces one side in the first direction z. The top surface 51 faces the same side as the mounting surface 211 of the land portion 21 described later in the first direction z. The bottom surface 52 faces the opposite side to the top surface 51 in the first direction z.

[0050] As shown in Figure 6As shown, the first side surface 53 is connected to the top surface 51 and the bottom surface 52, and faces the side in the second direction x. The first side surface 53 includes a first region 531, a second region 532, and a third region 533. The first region 531 includes the first direction z as an in-plane direction. When viewed in the first direction z, the first region 531 is located further outward than both the top surface 51 and the bottom surface 52. The second region 532 is located between the first region 531 and the top surface 51 in the first direction z. The third region 533 is located on the opposite side of the second region 532, with the first region 531 as a reference. The second region 532 and the third region 533 are inclined relative to the first region 531. The inclination angle α1 of the second region 532 relative to the first region 531 is larger than the inclination angle β1 of the third region 533 relative to the first region 531.

[0051] like Figure 6 As shown, the second side surface 54 is connected to the top surface 51 and the bottom surface 52, and faces the opposite side to the first side surface 53 in the second direction x. The second side surface 54 includes a fourth region 541, a fifth region 542, and a sixth region 543. The fourth region 541 includes the first direction z as an in-plane direction. When viewed in the first direction z, the fourth region 541 is located further outward than both the top surface 51 and the bottom surface 52. The fifth region 542 is located between the fourth region 541 and the top surface 51 in the first direction z. The sixth region 543 is located on the opposite side to the fifth region 542 with respect to the fourth region 541. The fifth region 542 and the sixth region 543 are inclined relative to the fourth region 541. The inclination angle α2 of the fifth region 542 relative to the fourth region 541 is larger than the inclination angle β2 of the sixth region 543 relative to the fourth region 541.

[0052] like Figure 7 and Figure 8 As shown, two third side surfaces 55 are connected to the top surface 51 and the bottom surface 52, respectively, and face opposite directions in the third direction y. Each of the two third side surfaces 55 comprises a seventh region 551, an eighth region 552, and a ninth region 553. The seventh region 551 includes a first direction z as its in-plane direction. When viewed in the first direction z, the seventh region 551 is located further outward than both the top surface 51 and the bottom surface 52. The eighth region 552 is located between the seventh region 551 and the top surface 51 in the first direction z. The ninth region 553 is located on the opposite side of the eighth region 552, with the seventh region 551 as a reference. The eighth region 552 and the ninth region 553 are inclined relative to the seventh region 551. The inclination angle α3 of the eighth region 552 relative to the seventh region 551 is equal to the inclination angle β3 of the ninth region 553 relative to the seventh region 551.

[0053] The first lead 20 and the plurality of second leads 30 all contain copper (Cu). The first lead 20 and the plurality of second leads 30 are formed from the same lead frame.

[0054] As shown in Figure 3 and Figures 9-11 , the first lead wire 20 mounts the semiconductor element 10. The first lead wire 20 has a pad portion 21, a first support portion 22, a second support portion 23, a third support portion 24, and a fourth support portion 25.

[0055] As shown in Figure 3 and Figures 9-11 , the pad portion 21 mounts the semiconductor element 10. The first lead wire 20 is rectangular in shape when viewed in the first direction z. The pad portion 21 has a mounting surface 211 and an exposed surface 212. The mounting surface 211 faces one side in the first direction z. The semiconductor element 10 is mounted on the mounting surface 211. The exposed surface 212 faces the opposite side from the mounting surface 211 in the first direction z. The exposed surface 212 is exposed from the bottom surface 52 of the sealing resin 50.

[0056] As shown in Figure 3 , Figure 5 and Figure 9 , the first support portion 22 is connected to one side of the pad portion 21 in the second direction x. The first support portion 22 is positioned closer to the first side surface 53 of the sealing resin 50 than to the second side surface 54 of the sealing resin 50. The first support portion 22 has a first surface 22A, a second surface 22B, and a first end surface 22C. The first surface 22A faces the same side as the mounting surface 211 in the first direction z. The second surface 22B faces the opposite side from the first surface 22A in the first direction z. The first surface 22A and the second surface 22B are covered with the sealing resin 50. The first end surface 22C faces one side in the second direction x. The first end surface 22C is exposed from the first region 531 of the first side surface 53.

[0057] As shown in Figure 9 , the dimension H2 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the second surface 22B is smaller than the dimension H1 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the first surface 22A. In this case, the dimension H2 is preferably 50% or less of the dimension H1. The dimension L1 of the second surface 22B in the second direction x is 50% or more of the dimension D1 of the region of the bottom surface 52 adjacent to the exposed surface 212 of the pad portion 21 on one side in the second direction x and overlapping the second surface 22B when viewed in the first direction z.

[0058] As shown in Figure 3 , Figure 5 and Figure 9As shown, the first support portion 22 has a first main portion 221, a first connecting portion 222, and a first end portion 223. The first main portion 221 includes a first surface 22A and a second surface 22B. The first connecting portion 222 is connected to the first main portion 221 and the pad portion 21. The first connecting portion 222 is inclined with respect to the mounting surface 211 toward a side away from the pad portion 21 in the second direction x. An inclination angle γ1 of the first connecting portion 222 with respect to the mounting surface 211 is preferably 50° or less. The first end portion 223 is located on a side opposite to the first connecting portion 222 with the first main portion 221 as a reference in the second direction x, and is connected to the first main portion 221. The first end portion 223 includes the first surface 22A, the second surface 22B, and a first end surface 22C.

[0059] As shown in Figure 3 , Figure 5 and Figure 12 , two first recessed portions 224 are provided in the first end portion 223 so as to be separately recessed from both sides in the third direction y. The two first recessed portions 224 are respectively connected to a peripheral edge of the first surface 22A of the first end portion 223 and a peripheral edge of the second surface 22B of the first end portion 223. In the semiconductor device A10, by providing the two first recessed portions 224 in the first end portion 223, a cross-sectional area of the first end portion 223 in a direction orthogonal to the second direction x is reduced from the first main portion 221 to the first end surface 22C.

[0060] As shown in Figure 12 and Figure 13 , the first end portion 223 has a first intermediate surface 223A located between the first surface 22A and the first end surface 22C in the second direction x and connected to the first surface 22A. The first intermediate surface 223A overlaps the first main portion 221 when viewed in the second direction x. The first end surface 22C is located between the first intermediate surface 223A and the second surface 22B in the first direction z. A dimension of the first intermediate surface 223A in the second direction x is smaller than a dimension of the first surface 22A of the first end portion 223 in the second direction x. The first intermediate surface 223A is inclined with respect to the first surface 22A toward an inner side of the first end portion 223 in the first direction z, and is also connected to the first end surface 22C. The first intermediate surface 223A is covered with the sealing resin 50. The first end surface 22C is separated from a first region 531 of the first side surface 53 of the sealing resin 50 on a side where the pad portion 21 is located in the second direction x.

[0061] As shown in Figure 12 and Figure 13 , a dimension b of the first end surface 22C in the third direction y is different from a dimension h of the first end surface 22C in the first direction z. In the semiconductor device A10, the dimension h is smaller than the dimension b.

[0062] As shown in Figure 3 , Figure 5 andFigure 9 The second support portion 23 is located on the side opposite the first support portion 22 with the pad portion 21 as a reference in the second direction x, and is connected to the pad portion 21. The second support portion 23 is located closer to the second side surface 54 of the sealing resin 50 than the first side surface 53 of the sealing resin 50. The second support portion 23 has a third surface 23A, a fourth surface 23B, and a second end surface 23C. The third surface 23A faces the same side as the mounting surface 211 in the first direction z. The fourth surface 23B faces the side opposite the third surface 23A in the first direction z. The third surface 23A and the fourth surface 23B are covered with the sealing resin 50. The second end surface 23C faces the side opposite the first end surface 22C of the first support portion 22 in the second direction x. The second end surface 23C is exposed from the fourth region 541 of the second side surface 54.

[0063] As Figure 9 shown, the dimension H4 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the fourth surface 23B is smaller than the dimension H3 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the third surface 23A. In this case, the dimension H4 is preferably 50% or less of the dimension H3. The dimension L2 of the second direction x of the fourth surface 23B is 50% or more of the dimension D2 of the second direction x of the region of the bottom surface 52 adjacent to the exposed surface 212 of the pad portion 21 on one side in the second direction x and overlapping the fourth surface 23B when viewed in the first direction z.

[0064] As Figure 3 , Figure 5 and Figure 9 shown, the second support portion 23 has a second main portion 231, a second connecting portion 232, and a second end portion 233. The second main portion 231 includes the third surface 23A and the fourth surface 23B. The second connecting portion 232 is connected to the second main portion 231 and the pad portion 21. The second connecting portion 232 is inclined with respect to the mounting surface 211 toward the side away from the pad portion 21 in the second direction x. The inclination angle γ2 of the second connecting portion 232 with respect to the mounting surface 211 is preferably 50° or less. The second end portion 233 is located on the side opposite the second connecting portion 232 with the second main portion 231 as a reference in the second direction x, and is connected to the second main portion 231. The second end portion 233 includes the third surface 23A, the fourth surface 23B, and the second end surface 23C.

[0065] As Figure 3 and Figure 5As shown, two second recessed portions 234 are provided separately recessed from both sides in the third direction y in the second end portion 233. The two second recessed portions 234 are connected to the peripheral edge of the third face 23A of the second end portion 233 and the peripheral edge of the fourth face 23B of the second end portion 233, respectively. In the semiconductor device A10, by providing the two second recessed portions 234 in the second end portion 233, the cross-sectional area of the second end portion 233 in the direction orthogonal to the second direction x is reduced from the second main portion 231 to the second end face 23C.

[0066] The dimension of the pad portion 21 in the second direction x is 10 times or more the dimension of each of the first support portion 22 and the second support portion 23 in the second direction x.

[0067] As shown in Figure 3 , Figure 5 and Figure 10 , the third support portion 24 is located on the same side as the first support portion 22 in the second direction x with the pad portion 21 as a reference, and is connected to the pad portion 21. The third support portion 24 is separated from the first support portion 22 in the third direction y. The third support portion 24 has a fifth face 24A, a sixth face 24B, and a third end face 24C. The fifth face 24A faces the same side as the mounting face 211 in the first direction z. The sixth face 24B faces the opposite side to the fifth face 24A in the first direction z. The fifth face 24A and the sixth face 24B are covered with the sealing resin 50. The third end face 24C faces the same side as the first end face 22C of the first support portion 22 in the second direction x. The third end face 24C is exposed from the first region 531 of the first side face 53 of the sealing resin 50.

[0068] As shown in Figure 10 , the dimension H6 of the sealing resin 50 in the first direction z from the bottom face 52 of the sealing resin 50 to the sixth face 24B is smaller than the dimension H5 of the sealing resin 50 in the first direction z from the top face 51 of the sealing resin 50 to the fifth face 24A. In this case, the dimension H6 is preferably 50% or less of the dimension H5. The dimension L3 of the sixth face 24B in the second direction x is 50% or more of the dimension D1 of the second direction x of the region of the bottom face 52 adjacent to the exposed face 212 of the pad portion 21 on one side in the second direction x and overlapping the sixth face 24B when viewed in the first direction z.

[0069] As shown in Figure 3 , Figure 5 and Figure 10As shown, the third support portion 24 has a third main portion 241, a third connecting portion 242, and a third end portion 243. The third main portion 241 includes a fifth surface 24A and a sixth surface 24B. The third connecting portion 242 is connected to the third main portion 241 and the pad portion 21. The third connecting portion 242 is inclined relative to the mounting surface 211 in the second direction x, away from the pad portion 21. The inclination angle γ3 of the third connecting portion 242 relative to the mounting surface 211 is preferably 50° or less. The third end portion 243 is located on the opposite side of the third connecting portion 242 in the second direction x, with the third main portion 241 as a reference, and is connected to the third main portion 241. The third end portion 243 includes a fifth surface 24A, a sixth surface 24B, and a third end face 24C.

[0070] like Figure 3 as well as Figure 5 As shown, two third recessed portions 244 are provided at the third end 243, each recessed separately on both sides in the second direction x. The two third recessed portions 244 are respectively connected to the periphery of the fifth surface 24A and the periphery of the sixth surface 24B of the third end 243. In the semiconductor device A10, by providing two third recessed portions 244 at the third end 243, the cross-sectional area of ​​the third end 243 in the direction orthogonal to the second direction x decreases from the third main portion 241 to the third end surface 24C.

[0071] like Figure 3 , Figure 5 and Figure 10 As shown, the fourth support portion 25 is located on the same side as the second support portion 23 in the second direction x, with reference to the pad portion 21, and is connected to the pad portion 21. The fourth support portion 25 is separated from the second support portion 23 in the third direction y. The fourth support portion 25 has a seventh surface 25A, an eighth surface 25B, and a fourth end surface 25C. The seventh surface 25A faces the same side as the mounting surface 211 in the first direction z. The eighth surface 25B faces the opposite side to the seventh surface 25A in the first direction z. The seventh surface 25A and the eighth surface 25B are covered by sealing resin 50. The fourth end surface 25C faces the same side as the second end surface 23C of the second support portion 23 in the second direction x. The fourth end surface 25C is exposed from the fourth region 541 of the second side surface 54 of the sealing resin 50.

[0072] like Figure 10As shown, the dimension H8 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the eighth surface 25B is smaller than the dimension H7 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the seventh surface 25A. In this case, the dimension H8 is preferably less than 50% of the dimension H7. The dimension L4 of the eighth surface 25B in the second direction x is more than 50% of the dimension D2 of the second direction x of the region adjacent to the exposed surface 212 of the pad portion 21 on one side of the second direction x and overlapping with the bottom surface 52 of the eighth surface 25B when viewed from the first direction z.

[0073] like Figure 3 , Figure 5 as well as Figure 10 As shown, the fourth support portion 25 has a fourth main portion 251, a fourth connecting portion 252, and a fourth end portion 253. The fourth main portion 251 includes a seventh surface 25A and an eighth surface 25B. The fourth connecting portion 252 is connected to the fourth main portion 251 and the pad portion 21. The fourth connecting portion 252 is inclined relative to the mounting surface 211 in the second direction x, away from the pad portion 21. The inclination angle γ4 of the fourth connecting portion 252 relative to the mounting surface 211 is preferably 50° or less. The fourth end portion 253 is located on the opposite side of the fourth connecting portion 252 in the second direction x, with the fourth main portion 251 as a reference, and is connected to the fourth main portion 251. The fourth end portion 253 includes a seventh surface 25A, an eighth surface 25B, and a fourth end surface 25C.

[0074] like Figure 3 as well as Figure 5 As shown, two fourth recesses 254 are provided at the fourth end 253, each recessed separately on both sides in the third direction x. The two fourth recesses 254 are respectively connected to the periphery of the seventh surface 25A and the periphery of the eighth surface 25B of the fourth end 253. In the semiconductor device A10, by providing two fourth recesses 254 at the fourth end 253, the cross-sectional area of ​​the fourth end 253 along a direction orthogonal to the second direction x decreases from the fourth main portion 251 to the fourth end surface 25C.

[0075] like Figure 3 as well as Figures 9-11 As shown, semiconductor element 10 is mounted on pad portion 21 of first lead 20. Semiconductor element 10 performs the function of semiconductor device A10. Semiconductor element 10 is not limited to any particular type, such as IC or LSI. Semiconductor element 10 is bonded to mounting surface 211 of pad portion 21 via bonding layer 19. Bonding layer 19 is composed of paste containing metal particles. The metal particles are, for example, silver (Ag). Therefore, bonding layer 19 is a conductor. Alternatively, bonding layer 19 can also be solder.

[0076] like Figure 3 and Figure 11As shown, the semiconductor device 10 has a device surface 11 and a plurality of electrodes 12. The device surface 11 faces the same side as the mounting surface 211 of the pad portion 21 in the first direction z. The device surface 11 is located in the first direction z between the top surface 51 of the sealing resin 50 and the first surface 22A of the first support portion 22, the third surface 23A of the second support portion 23, the fifth surface 24A of the third support portion 24, and the seventh surface 25A of the fourth support portion 25. Therefore, when viewed in a direction orthogonal to the first direction z, the semiconductor device 10 includes portions protruding from the first support portion 22, the second support portion 23, the third support portion 24, and the fourth support portion 25 in the first direction z. The plurality of electrodes 12 are disposed on the device surface 11. The plurality of electrodes 12 are respectively connected to a circuit constituting the semiconductor device 10.

[0077] like Figure 3 and Figure 5 As shown, a plurality of second leads 30 are disposed on both sides of the first lead 20 in the third direction y. The plurality of second leads 30 are respectively connected to the semiconductor element 10. The plurality of second leads 30 include a plurality of first terminals 30A and a plurality of second terminals 30B. The plurality of first terminals 30A are located on one side of the first lead 20 in the third direction y. The plurality of first terminals 30A are arranged along the second direction x. The plurality of first terminals 30A protrude from the seventh region 551 of one of the two third sides 55 of the sealing resin 50. The plurality of second terminals 30B are located on the opposite side of the plurality of first terminals 30A in the third direction y, with reference to the first lead 20. The plurality of second terminals 30B are arranged along the second direction x. The plurality of second terminals 30B protrude from the seventh region 551 of the other of the two third sides 55.

[0078] like Figure 3 and Figure 5 As shown, the plurality of second leads 30 each have an inner portion 31 and an outer portion 32. The inner portion 31 is covered by a sealing resin 50. Figure 3 as well as Figure 11 As shown, each of the plurality of second leads 30 has a connection surface 31 inside its interior 31. The connection surface 311 faces the same side as the mounting surface 211 of the pad portion 21 in the first direction z. The connection surface 311 is located between the mounting surface 211 and the top surface 51 of the sealing resin 50 in the first direction z. In the semiconductor device A10, the connection surface 311 is located between the mounting surface 211 and the element surface 11 of the semiconductor element 10 in the first direction z. Furthermore, in the semiconductor device A10, the connection surface 311 of each of the plurality of second leads 30, the first surface 22A of the first support portion 22, the third surface 23A of the second support portion 23, the fifth surface 24A of the third support portion 24, and the seventh surface 25A of the fourth support portion 25 are all contained within the same surface.

[0079] likeFigure 3 as well as Figure 5 As shown, the outer portion 32 is connected to any one of the corresponding plurality of second leads 30 interior portions 31. The outer portion 32 protrudes from any one of the seventh regions 551 of the two third sides 55 of the sealing resin 50. The surface of the outer portion 32 is, for example, tin-plated. When viewed in the first direction z, the outer portion 32 extends in the third direction y. When viewed in the second direction x, the outer portion 32 is curved into a gull-wing shape.

[0080] like Figure 5 as well as Figure 11 As shown, each of the plurality of second leads 30 has an outer surface 32 with a mounting surface 321. The mounting surface 321 protrudes from the sealing resin 50. In the first direction z, the mounting surface 321 faces the opposite side of the connection surface 311 of the corresponding inner surface 31 and is located at the position furthest from the connection surface 311 of the corresponding inner surface 31. The mounting surface 321 protrudes inward from the bottom surface 52 containing the sealing resin 50. The mounting surface 321 is inclined relative to the bottom surface 52.

[0081] like Figure 3 and Figure 11 As shown, multiple wires 40 are individually electrically connected to the connection surfaces 311 of the multiple electrodes 12 and the multiple second leads 30 of the semiconductor element 10. Thus, the multiple second leads 30 are respectively connected to the semiconductor element 10. The multiple wires 40 may, for example, contain gold (Au). Alternatively, the multiple wires 40 may also contain aluminum (Al) or copper.

[0082] Next, based on Figure 14 The semiconductor device A11 of the first variation of the first embodiment of the present disclosure will be described. Figure 14 With respect to semiconductor device A10 Figure 13 Correspondingly, in semiconductor device A11, the structure of the first support portion 22 of the first lead 20 is different from that in semiconductor device A10.

[0083] like Figure 14 As shown, the first end face 22C of the first support portion 22 is flush with the first region 531 of the first side surface 53 of the sealing resin 50.

[0084] Next, based on Figure 15 The semiconductor device A12 of the second variation of the first embodiment of the present disclosure will be described. Figure 15 With respect to semiconductor device A10 Figure 13 Correspondingly, in semiconductor device A11, the structure of the first support portion 22 of the first lead 20 is different from that in semiconductor device A10.

[0085] like Figure 15As shown, the in-plane direction of the first intermediate surface 223A of the first end portion 223 of the first support portion 22 includes the first direction z. The first intermediate surface 223A is separated from the first end surface 22C of the first support portion 22.

[0086] Next, based on Figure 16 The semiconductor device A13 of the third variation of the first embodiment of the present disclosure will be described. Figure 16 With respect to semiconductor device A10 Figure 13 Correspondingly, in semiconductor device A11, the structure of the first support portion 22 of the first lead 20 is different from that in semiconductor device A10.

[0087] like Figure 16 As shown, the first end portion 223 has a second intermediate surface 223B located between the second surface 22B and the first end surface 22C in the second direction x and connected to the second surface 22B. When viewed in the second direction x, the second intermediate surface 223B overlaps with the first main portion 221. The first end surface 22C is located between the first intermediate surface 223A and the second intermediate surface 223B in the first direction z. The dimension of the second intermediate surface 223B in the second direction x is smaller than the dimension of the second surface 22B of the first end portion 223 in the second direction x. The second intermediate surface 223B is inclined relative to the second surface 22B towards the inside of the first end portion 223 in the first direction z and is also connected to the first end surface 22C. The second intermediate surface 223B is covered by sealing resin 50.

[0088] Next, based on Figures 17-20 An example of a method for manufacturing semiconductor device A10 will be described. Figures 17-20 With respect to semiconductor device A10 Figure 9 correspond.

[0089] First, such as Figure 17 As shown, a first step P1 is performed to form a first lead 20 having a pad portion 21, a first support portion 22, and a second support portion 23. The first step P1 is performed concurrently with the formation of a lead frame including the first lead 20 and a plurality of second leads 30. In the description of the manufacturing method of the semiconductor device A10, the description of the formation of the third support portion 24 and the fourth support portion 25 of the first lead 20 is omitted. In the first step P1, by forming two first recesses 224 on the first end portion 223 of the first support portion 22, the cross-sectional area of ​​the first end portion 223 along a direction orthogonal to the second direction x is reduced from the first main portion 221 to the first end face 22C of the first support portion 22. Simultaneously, by forming two second recesses 234 on the second end portion 233 of the second support portion 23, the cross-sectional area of ​​the second end portion 233 along a direction orthogonal to the second direction x is reduced from the second main portion 231 to the second end face 23C of the second support portion 23.

[0090] As Figure 17 shown, in the first process P1, a groove portion 29 is formed in the first support portion 22 and the second support portion 23 so as to be recessed from the first face 22A of the first support portion 22 and the third face 23A of the second support portion 23, respectively. The groove portion 29 extends in the third direction y. The groove portion 29 is defined by an inner peripheral face 291 connected to either one of the first face 22A and the third face 23A. The groove portion 29 formed in the first support portion 22 is located on the side opposite to the first main portion 221 in the second direction x with two first recessed portions 224 as a reference. The groove portion 29 formed in the second support portion 23 is located on the side opposite to the second main portion 231 in the second direction x with two second recessed portions 234 as a reference.

[0091] Further, as Figure 17 shown, in the first process P1, the first connecting portion 222 of the first support portion 22 is inclined with respect to the mounting face 211 on the side away from the land portion 21 in the second direction x. At the same time, the second connecting portion 232 of the second support portion 23 is inclined with respect to the mounting face 211 on the side away from the land portion 21 in the second direction x. The inclination angles γ1, γ2 of the first connecting portion 222 and the second connecting portion 232 with respect to the mounting face 211 are preferably 50° or less, respectively.

[0092] Next, as Figure 18 shown, the second process P2 of joining the semiconductor element 10 to the mounting face 211 of the land portion 21 is performed. In the second process P2, the semiconductor element 10 is joined to the mounting face 211 via the joining layer 19. Thereafter, although not shown, a plurality of lead wires 40 are formed so as to be individually conductive joined to the respective connecting faces 311 of the plurality of electrodes 12 and the plurality of second lead wires 30 of the semiconductor element 10 by wire bonding.

[0093] Next, as Figure 19 shown, the third process P3 of forming a sealing resin 50 that covers a part of each of the land portion 21, the first support portion 22, and the second support portion 23 and the semiconductor element 10 is performed. The sealing resin 50 is formed by transfer molding. In the third process P3, a part of each of the first face 22A and the second face 22B of the first support portion 22 and a part of each of the third face 23A and the fourth face 23B of the second support portion 23 are covered with the sealing resin 50. At the same time, the exposed face 212 of the land portion 21 is exposed from the bottom face 52. Further, the dimension H2 shown in Figure 9 is smaller than the dimension H1. At the same time, the dimension H4 shown in Figure 9 is smaller than the dimension H3.

[0094] Further, as Figure 19As shown, in the third step P3, the first support portion 22 protrudes from the first region 531 of the first side surface 53 of the sealing resin 50. At this time, the inclination angle α1 of the second region 532 of the first side surface 53 relative to the first region 531 is greater than the inclination angle β1 of the third region 533 of the first side surface 53 relative to the first region 531. Simultaneously, the second support portion 23 protrudes from the fourth region 541 of the second side surface 54 of the sealing resin 50. At this time, the inclination angle α2 of the fifth region 542 of the second side surface 54 relative to the fourth region 541 is greater than the inclination angle β2 of the sixth region 543 of the second side surface 54 relative to the fourth region 541.

[0095] Next, as Figure 20 As shown, a fourth step P4 is performed to cut the first support portion 22 and the second support portion 23 respectively. In the fourth step P4, the support body 81 supports the first surface 22A and the second surface 22B of the first support portion 22 and the third surface 23A and the fourth surface 23B of the second support portion 23. Then, the load body 82 applies a compressive force P to the exposed surface 212 of the pad portion 21 and the bottom surface 52 of the sealing resin 50, thereby cutting the first support portion 22 and the second support portion 23 respectively. In the fourth step P4, a first end face 22C corresponding to the cut surface of the first support portion 22 is formed at the first end portion 223. And, a second end face 23C corresponding to the cut surface of the second support portion 23 is formed at the second end portion 233. The first support portion 22 and the second support portion 23 are cut off starting from the groove portion 29 respectively. In the first support portion 22, a portion of the inner peripheral surface 291 of the groove portion 29 is defined as the first intermediate surface 223A of the first end portion 223. After the above steps, the semiconductor device A10 is obtained.

[0096] Next, based on Figure 21 An example of a method for manufacturing semiconductor device A13 will be described. Figure 21 With respect to semiconductor device A10 Figure 9 correspond.

[0097] like Figure 21In the first process P1 of the manufacturing of the semiconductor device A13, as shown, groove portions 29 are formed in the first support portion 22 and the second support portion 23 so as to be recessed from the first face 22A and the second face 22B of the first support portion 22 and the third face 23A and the fourth face 23B of the second support portion 23, respectively. The groove portion 29 formed in the second face 22B of the first support portion 22 overlaps the groove portion 29 formed in the first face 22A of the first support portion 22 when viewed in the first direction z. Meanwhile, the groove portion 29 formed in the fourth face 23B of the second support portion 23 overlaps the groove portion 29 formed in the third face 23A of the second support portion 23 when viewed in the first direction z. The second process P2, the third process P3, and the fourth process P4 involved in the manufacturing of the semiconductor device A13 are the same as in the case of the manufacturing of the semiconductor device A10, and thus the description thereof is omitted here.

[0098] Next, the effect of the semiconductor device A10 is described.

[0099] The semiconductor device A10 includes the first lead 20 having the pad portion 21 and the first support portion 22, the semiconductor element 10, and the sealing resin 50. The first support portion 22 has the first face 22A, the second face 22B, and the first end face 22C. The pad portion 21 is exposed from the bottom face 52 of the sealing resin 50. The dimension H2 of the sealing resin 50 in the first direction z from the bottom face 52 to the second face 22B is smaller than the dimension H1 of the sealing resin 50 in the first direction z from the top face 51 of the sealing resin 50 to the first face 22A. The dimension L1 of the second face 22B in the second direction x is 50% or more of the dimension D1 of the bottom face 52 adjacent to the pad portion 21 on one side in the second direction x and overlapping the second face 22B when viewed in the first direction z. By adopting the present structure, in the semiconductor device A10, Figure 20 In the fourth process P4 as shown, the concentration of the compressive stress of the sealing resin 50 from the first support portion 22 is reduced as the first support portion 22 is cut. Therefore, according to the present structure, in the semiconductor device A10, the stress concentration of the sealing resin 50 accompanying the cutting of the first lead 20 can be reduced at the time of the manufacturing of the semiconductor device A10.

[0100] The cross-sectional area of the first end portion 223 of the first support portion 22 in the direction orthogonal to the second direction x is reduced from the first main portion 221 to the first end face 22C. By adopting the present structure, the area of the first end face 22C is reduced, and thus the stress concentration of the sealing resin 50 at the first end face 22C can be reduced. Figure 20 In the fourth process P4 as shown, the cutting of the first support portion 22 becomes smooth.

[0101] The first end portion 223 of the first support portion 22 has a first intermediate surface 223A. When viewed in the second direction x, the first intermediate surface 223A overlaps with the first main portion 221. The first end face 22C of the first support portion 22 is located between the first intermediate surface 223A and the second surface 22B in the first direction z. By adopting this structure, the dimension h of the first end face 22C in the first direction z can be made smaller than the dimension b of the first end face 22C in the third direction y. As a result, the moment of inertia of the first end face 22C about the third direction y becomes smaller, thus... Figure 20 In the fourth process P4 shown, the cutting of the first support part 22 becomes smoother.

[0102] The first connecting portion 222 of the first support portion 22 is inclined relative to the mounting surface 211 in the second direction x, toward the side away from the pad portion 21. By adopting this structure, in Figure 20 In the fourth step P4 shown, the concentration of compressive stress acting on the sealing resin 50 from the first support 22 is further reduced as the first support 22 is cut. This further reduces the stress concentration in the sealing resin 50 that occurs with the cutting of the first lead 20.

[0103] In the sealing resin 50, the inclination angle α1 of the second region 532 of the first side surface 53 relative to the first region 531 of the first side surface 53 is greater than the inclination angle β1 of the third region 533 of the first side surface 53 relative to the first region 531. By adopting this structure, in Figure 19 Even in the third process P3 shown, Figure 9 The relationship shown that dimension H1 is greater than dimension H2 can also suppress defects in the sealing resin 50 caused by the pulling of the molding die.

[0104] Second implementation method:

[0105] based on Figures 22-26 The semiconductor device A20 according to the second embodiment of this disclosure will be described. In these figures, elements that are the same or similar to those in the semiconductor device A10 described above are labeled with the same reference numerals, and repeated descriptions are omitted. Here, for ease of understanding, Figure 22 It is indicated through sealing resin 50. Figure 22 In the diagram, the shape of the sealing resin 50 is represented by an imaginary line. Figure 23 With respect to semiconductor device A10 Figure 9 correspond. Figure 24 With respect to semiconductor device A10 Figure 10 correspond.

[0106] In semiconductor device A20, the structures of the first support portion 22, the second support portion 23, the third support portion 24, and the fourth support portion 25 of the first lead 20 are different from those of semiconductor device A10.

[0107] As shown in Figure 22 and Figure 23 , a first recessed portion 224 recessed from the second face 22B is provided at the first end portion 223 of the first support portion 22. The first recessed portion 224 is continuous with the first main portion 221 and the first end face 22C. A second recessed portion 234 recessed from the fourth face 23B is provided at the second end portion 233 of the second support portion 23. The second recessed portion 234 is continuous with the second main portion 231 and the second end face 23C.

[0108] As shown in Figure 22 and Figure 24 , a third recessed portion 244 recessed from the sixth face 24B is provided at the third end portion 243 of the third support portion 24. The third recessed portion 244 is continuous with the third main portion 241 and the third end face 24C. A fourth recessed portion 254 recessed from the eighth face 25B is provided at the fourth end portion 253 of the fourth support portion 25. The fourth recessed portion 254 is continuous with the fourth main portion 251 and the fourth end face 25C.

[0109] As shown in Figure 26 , in the first support portion 22, the first recessed portion 224 of the first end portion 223 is in contact with the sealing resin 50. The dimension of the first recessed portion 224 in the second direction x is smaller than the dimension L1 of the second face 22B of the first support portion 22. The first end face 22C is flush with the first region 531 of the first side face 53 of the sealing resin 50.

[0110] Next, the semiconductor device A21 of the modification of the second embodiment of the present disclosure will be described based on Figure 27 . Figure 27 corresponding to the Figure 26 of the semiconductor device A20. In the semiconductor device A21, the structure of the first support portion 22 of the first lead 20 is different from that of the semiconductor device A20.

[0111] As shown in Figure 27 , the first end portion 223 has a first intermediate face 223A between the first face 22A and the first end face 22C in the second direction x and continuous with the first face 22A. The first intermediate face 223A overlaps the first main portion 221 when viewed in the second direction x. The first end face 22C is between the first intermediate face 223A and the second recessed portion 234 in the first direction z. The dimension of the first intermediate face 223A in the second direction x is larger than the dimension of the second recessed portion 234 in the second direction x. The first intermediate face 223A is inclined with respect to the first face 22A toward the inside of the first end portion 223 in the first direction z and is also continuous with the first end face 22C. The first intermediate face 223A is covered with the sealing resin 50.

[0112] Next, the semiconductor device A21 of the modification of the second embodiment of the present disclosure will be described based onFigures 28-30 An example of a method for manufacturing semiconductor device A20 will be described. Figures 28-30 With respect to semiconductor device A20 Figure 23 correspond.

[0113] First, such as Figure 28 As shown, a first step P1 is performed to form a first lead 20 having a pad portion 21, a first support portion 22, and a second support portion 23. In the first step P1, by forming a first recess 224 on the first end portion 223 of the first support portion 22, the cross-sectional area of ​​the first end portion 223 along the direction orthogonal to the second direction x is reduced from the first main portion 221 to the first end face 22C of the first support portion 22. At the same time, by forming a second recess 234 on the second end portion 233 of the second support portion 23, the cross-sectional area of ​​the second end portion 233 along the direction orthogonal to the second direction x is reduced from the second main portion 231 to the second end face 23C of the second support portion 23.

[0114] Next, a second process P2 is performed, in which the semiconductor device 10 is bonded to the mounting surface 211 of the pad portion 21. The second process P2 is related to... Figure 18 The second process P2 involved in the manufacture of the semiconductor device A10 shown is the same, so its description is omitted here.

[0115] Next, as Figure 29 As shown, a third step P3 is performed to form a sealing resin 50 covering a portion of the pad portion 21, the first support portion 22, and the second support portion 23, as well as a portion of the semiconductor element 10. In the third step P3, at least a portion of the first recess 224 formed in the first support portion 22 and at least a portion of the second recess 234 formed in the second support portion 23 are covered by the sealing resin 50.

[0116] Next, as Figure 30 As shown, a fourth step P4 is performed to cut the first support portion 22 and the second support portion 23 respectively. In the fourth step P4, the support body 81 supports the second surface 22B of the first support portion 22 and the fourth surface 23B of the second support portion 23. Then, the load body 82 applies a compressive force P to the top surface 51 of the sealing resin 50, thereby cutting the first support portion 22 and the second support portion 23 respectively. The first support portion 22 is cut off starting from the first recess 224. The second support portion 23 is cut off starting from the second recess 234. After the above steps, the semiconductor device A20 is obtained.

[0117] Next, based on Figure 31 and Figure 32 An example of a method for manufacturing semiconductor device A21 will be described. Figure 31 and Figure 32 With respect to semiconductor device A20Figure 23 correspond.

[0118] like Figure 31 As shown, in the first process P1 involved in the manufacture of semiconductor device A21, grooves 29 are formed in the first support portion 22 and the second support portion 23, respectively recessed from the first surface 22A of the first support portion 22 and the third surface 23A of the second support portion 23. When viewed in the first direction z, the groove 29 formed in the first support portion 22 overlaps with the first recess 224. Simultaneously, when viewed in the first direction z, the groove 29 formed in the second support portion 23 overlaps with the second recess 234. The second process P2 and the third process P3 involved in the manufacture of semiconductor device A21 are the same as those involved in the manufacture of semiconductor device A20, therefore their descriptions are omitted here.

[0119] like Figure 32 As shown, in the fourth process P4 involved in the manufacture of semiconductor device A21, the first support portion 22 is cut off starting from both the first recess 224 and the groove 29. The second support portion 23 is cut off starting from both the second recess 234 and the groove 29. In the first support portion 22, a portion of the inner circumferential surface 291 of the groove 29 is defined to correspond to the first intermediate surface 223A of the first end portion 223.

[0120] Next, the function and effect of the semiconductor device A20 will be explained.

[0121] Semiconductor device A20 includes a first lead 20 having a pad portion 21 and a first support portion 22, a semiconductor element 10, and a sealing resin 50. The first support portion 22 has a first surface 22A, a second surface 22B, and a first end surface 22C. The pad portion 21 protrudes from the bottom surface 52 of the sealing resin 50. The dimension H2 of the sealing resin 50 in the first direction z from the bottom surface 52 to the second surface 22B is smaller than the dimension H1 of the sealing resin 50 in the first direction z from the top surface 51 to the first surface 22A. The dimension L1 of the second surface 22B in the second direction x is more than 50% of the dimension D1 of the bottom surface 52 that is adjacent to the pad portion 21 on one side of the second direction x and overlaps with the second surface 22B when viewed in the first direction z. Therefore, according to this structure, in semiconductor device A20, stress concentration of the sealing resin 50 that acts during the cutting of the first lead 20 can also be reduced during the manufacturing of semiconductor device A20. Furthermore, in semiconductor device A20, by having a structure common to semiconductor device A10, it is possible to achieve the same effect as semiconductor device A10.

[0122] In semiconductor device A20, a first recessed portion 224, recessed from a second surface 22B, is provided at the first end 223 of the first support portion 22. The first recessed portion 224 is connected to the first main portion 221. By adopting this structure, in... Figure 30In the illustrated fourth process P4, the first support portion 22 is cut off from the first recessed portion 224 as a starting point in a state where the compression force P acts on the top surface 51 of the sealing resin 50, and thus the cutting off of the first support portion 22 becomes smoother. Further, the dimension h of the first end surface 22C of the first support portion 22 in the first direction z can be made smaller than the dimension b of the first end surface 22C in the third direction y. Thus, the cross-sectional moment of inertia of the first end surface 22C about the third direction y is further reduced.

[0123] The present disclosure is not limited to the above-described embodiments. The specific structures of the parts of the present disclosure can be freely designed with various modifications.

[0124] The present disclosure includes embodiments described in the following supplementary notes.

[0125] Supplementary Note 1.

[0126] A semiconductor device includes:

[0127] a first lead having a land portion having a mounting surface toward one side in a first direction and a first support portion connected to one side of the land portion in a second direction orthogonal to the first direction;

[0128] a semiconductor element joined to the mounting surface; and

[0129] a sealing resin covering a part of the first lead and the semiconductor element,

[0130] the sealing resin has a top surface toward the same side as the mounting surface in the first direction and a bottom surface toward the opposite side of the top surface in the first direction, and the land portion is exposed,

[0131] the first support portion has a first surface toward the same side as the top surface in the first direction and covered by the sealing resin, a second surface toward the opposite side of the first surface in the first direction and covered by the sealing resin, and a first end surface toward one side in the second direction and exposed from the sealing resin,

[0132] a dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than a dimension of the sealing resin in the first direction from the top surface to the first surface,

[0133] a dimension of the second surface in the second direction is 50% or more of a dimension of the bottom surface in the second direction adjacent to the land portion on one side in the second direction and overlapping the second surface when viewed in the first direction.

[0134] Supplementary Note 2.

[0135] The semiconductor device according to the supplementary note 1,

[0136] The first support portion has a first main portion including the first surface and the second surface, a first connecting portion connected to the first main portion and the pad portion, and a first end portion located on the side opposite to the first connecting portion with the first main portion as a reference in the second direction and connected to the first main portion,

[0137] The first end portion includes the first surface and a first end surface,

[0138] A cross-sectional area of the first end portion in a direction orthogonal to the second direction decreases from the first main portion to the first end surface.

[0139] Supplementary Note 3

[0140] The semiconductor device according to the supplementary note 2,

[0141] A size of the first end surface in a third direction orthogonal to the first direction and the second direction is different from a size of the first end surface in the first direction.

[0142] Supplementary Note 4

[0143] The semiconductor device according to the supplementary note 3,

[0144] The first end portion is provided with a recessed portion recessed from one side in the third direction,

[0145] The recessed portion is connected to a peripheral edge of the first surface of the first end portion.

[0146] Supplementary Note 5

[0147] The semiconductor device according to the supplementary note 4,

[0148] The first end portion has a first intermediate surface located between the first surface and the first end surface in the second direction and connected to the first surface,

[0149] The first intermediate surface overlaps the first main portion when viewed in the second direction,

[0150] The first end surface is located between the first intermediate surface and the second surface in the first direction.

[0151] Supplementary Note 6

[0152] The semiconductor device according to the supplementary note 5,

[0153] The size of the first intermediate surface in the second direction is smaller than the size of the first surface of the first end portion in the second direction.

[0154] Clause 7.

[0155] The semiconductor device according to Clause 6,

[0156] The first intermediate surface is inclined with respect to the first surface toward the inside of the first end portion in the first direction.

[0157] Clause 8.

[0158] The semiconductor device according to Clause 6,

[0159] The size of the first end surface in the first direction is smaller than the size of the first end surface in the third direction.

[0160] Clause 9.

[0161] The semiconductor device according to Clause 3,

[0162] The first end portion is provided with a recessed portion recessed from the second surface,

[0163] The recessed portion is connected to the first main portion.

[0164] Clause 10.

[0165] The semiconductor device according to any one of Clauses 3 to 9,

[0166] The first connecting portion is inclined with respect to the mounting surface toward the side away from the pad portion in the second direction.

[0167] Clause 11.

[0168] The semiconductor device according to Clause 10,

[0169] The first lead has a second support portion located on the side opposite to the first support portion with the pad portion as a reference in the second direction and connected to the pad portion,

[0170] The second support portion has a third surface inclined with respect to the mounting surface toward the same side as the top surface in the first direction and covered with the sealing resin, a fourth surface inclined with respect to the mounting surface toward the side opposite to the third surface in the first direction and covered with the sealing resin, and a second end surface inclined with respect to the mounting surface toward the side opposite to the first end surface in the second direction and exposed from the sealing resin,

[0171] the size of the first direction of the sealing resin from the top surface to the third surface is smaller than the size of the first direction of the sealing resin from the bottom surface to the fourth surface,

[0172] the size of the second direction of the fourth surface is 50% or more of the size of the second direction of the region of the bottom surface adjacent to the land portion on one side in the second direction and overlapping the fourth surface when viewed in the first direction.

[0173] Clause 12.

[0174] The semiconductor device according to Clause 11,

[0175] the second support portion has a second main portion including the third surface and the fourth surface, a second connecting portion connected to the second main portion and the land portion, and a second end portion located on the opposite side of the second connecting portion from the second main portion in the second direction and connected to the second main portion,

[0176] the second end portion includes the third surface and a second end surface,

[0177] the cross-sectional area of the second end portion in a direction orthogonal to the second direction decreases from the second main portion to the second end surface.

[0178] Clause 13.

[0179] The semiconductor device according to Clause 12,

[0180] the first lead has a third support portion located on the same side of the land portion as the first support portion in the second direction and connected to the land portion,

[0181] the third support portion is separated from the first support portion in the third direction,

[0182] the third support portion has a third end surface facing the same side as the first end surface in the second direction and exposed from the sealing resin,

[0183] the cross-sectional area of the third support portion in a direction orthogonal to the second direction decreases from the side where the land portion is located to the third end surface.

[0184] Clause 14.

[0185] The semiconductor device according to Clause 12,

[0186] the sealing resin has a first side surface and a second side surface facing opposite sides of each other in the second direction,

[0187] The first side surface includes a first region including the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the side opposite to the second region with the first region as a reference,

[0188] The second region and the third region are inclined with respect to the first region, respectively,

[0189] The first end surface is exposed from the first region,

[0190] The second end surface is exposed from the second side surface.

[0191] Addendum 15

[0192] The semiconductor device according to Addendum 14,

[0193] An inclination angle of the second region with respect to the first region is larger than an inclination angle of the third region with respect to the first region.

[0194] Addendum 16

[0195] The semiconductor device according to Addendum 15,

[0196] The first end surface is separated from the first region on the side where the pad portion is located in the second direction.

[0197] Addendum 17

[0198] The semiconductor device according to Addendum 14,

[0199] Further comprising a second lead wire that is in conduction with the semiconductor element,

[0200] The sealing resin has a third side surface toward the side of the second direction,

[0201] The second lead wire protrudes from the third side surface.

[0202] Addendum 18

[0203] The semiconductor device according to Addendum 17,

[0204] Further comprising a wire that is in electrically conductive junction with the semiconductor element and the second lead wire,

[0205] The second lead wire has a connection surface that is toward the same side as the mounting surface in the first direction and is covered by the sealing resin,

[0206] The connection surface is located between the top surface and the mounting surface in the first direction,

[0207] The conductive wire is conductively joined to the connection surface.

[0208] Clause 19

[0209] The semiconductor device according to Clause 18,

[0210] The semiconductor element has an element surface on the same side as the mounting surface in the first direction,

[0211] The element surface is located between the top surface and the first and third surfaces in the first direction.

[0212] Clause 20

[0213] The semiconductor device according to Clause 19,

[0214] The connection surface is located between the element surface and the mounting surface in the first direction.

[0215] Clause 21

[0216] The semiconductor device according to any one of Clauses 5 to 8,

[0217] The second end portion includes a second surface,

[0218] The recessed portion is connected to the periphery of the second surface of the second end portion.

[0219] Clause 22

[0220] The semiconductor device according to Clause 21,

[0221] The recessed portion includes a first portion and a second portion separated from each other in the third direction,

[0222] The first portion and the second portion are separately recessed from both sides of the third direction of the first end portion.

[0223] Clause 23

[0224] The semiconductor device according to Clause 21,

[0225] The first end portion has a second intermediate surface located between the second surface and the first end surface in the second direction and connected to the second surface,

[0226] The second intermediate surface overlaps the first main portion when viewed in the second direction,

[0227] The first end portion is located between the first intermediate surface and the second intermediate surface in the first direction.

[0228] Clause 24

[0229] The semiconductor device according to the aspect 23,

[0230] The size of the second direction of the second intermediate surface is smaller than the size of the second surface of the first end portion in the second direction.

[0231] The aspect 25.

[0232] The semiconductor device according to the aspect 24, wherein

[0233] The second intermediate surface is inclined with respect to the second surface toward the inside of the first end portion in the first direction.

[0234] The aspect 26.

[0235] The semiconductor device according to the aspect 18,

[0236] The second lead has a mounting surface exposed from the sealing resin and facing a side opposite to the connection surface in the first direction,

[0237] The mounting surface is located farthest from the connection surface in the first direction,

[0238] The mounting surface protrudes from a plane including the bottom surface.

[0239] The aspect 27.

[0240] The semiconductor device according to the aspect 27,

[0241] The mounting surface is inclined with respect to the bottom surface.

[0242] The aspect 28.

[0243] The semiconductor device according to the aspect 10,

[0244] The size of the second direction of the pad portion is 10 times or more the size of the second direction of the first support portion.

[0245] Explanation of symbols

[0246] A10, A20—semiconductor device, 10—semiconductor element, 11—element face, 12—electrode, 19—bonding layer, 20—first lead wire, 21—pad portion, 211—mounting face, 212—exposed face, 22—first support portion, 22A—first face, 22B—second face, 22C—first end face, 221—first main portion, 222—first connecting portion, 223—first end portion, 223A—first intermediate face, 223B—second intermediate face, 224—first recessed portion, 23—second support portion, 23A—third face, 23B—fourth face, 23C—second end face, 231—second main portion, 232—second connecting portion, 233—second end portion, 234—second recessed portion, 24—third support portion, 24A—fifth face, 24B—sixth face, 24C—third end face, 241—third main portion, 242—third connecting portion, 243—third end portion, 244—third recessed portion, 25—fourth support portion, 25A—seventh face, 25B—eighth face, 25C—fourth end face, 251—fourth main portion, 252—fourth connecting portion, 253—fourth end portion, 254—fourth recessed portion, 29—groove portion, 291—inner peripheral face, 30—second lead wire, 30A—first terminal, 30B—second terminal, 31—interior, 311—connecting face, 32—exterior, 321—mounting face, 40—wire, 50—sealing resin, 51—top face, 52—bottom face, 53—first side face, 531 to 533—first to third regions, 54—second side face, 541 to 543—fourth to sixth regions, 55—third side face, 551 to 553—seventh to ninth regions, P1 to P4—first to fourth processes, z—first direction, x—second direction, y—third direction.

Claims

1. A semiconductor device, characterized in that, have: The first lead has a pad portion and a first support portion. The pad portion has a mounting surface facing a first direction, and the first support portion is connected to a side of the pad portion in a second direction orthogonal to the first direction. A semiconductor element, which is bonded to the aforementioned mounting surface; as well as A sealing resin is used to cover a portion of the first lead and the semiconductor element. The aforementioned sealing resin has: a top surface facing the same side as the mounting surface in the first direction; and a bottom surface facing the opposite side to the top surface in the first direction, and the solder pad portion is exposed. The first support portion has a first surface that faces the same side as the top surface in the first direction and is covered by the sealing resin. The second surface faces the side opposite to the first surface in the first direction and is covered by the sealing resin; and the first end surface faces the side in the second direction and is exposed from the sealing resin. The dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the first surface. The dimension of the second direction of the second surface is more than 50% of the dimension of the second direction of the area of ​​the bottom surface that is adjacent to the pad portion on one side of the second direction and overlaps with the second surface when viewed in the first direction.

2. The semiconductor device according to claim 1, characterized in that, The first support portion includes: a first main portion comprising the first surface and the second surface; a first connecting portion connected to the first main portion and the pad portion; and a first end portion located on the side opposite to the first connecting portion with respect to the first main portion in the second direction, and connected to the first main portion. The aforementioned first end portion includes the aforementioned first surface and the aforementioned first end face. The cross-sectional area of ​​the first end portion along a direction orthogonal to the second direction decreases from the first main portion to the first end face.

3. The semiconductor device according to claim 2, characterized in that, The dimension of the first end face in a third direction orthogonal to the first direction and the second direction is different from the dimension of the first end face in the first direction.

4. The semiconductor device according to claim 3, characterized in that, A recessed portion is provided at the first end, which is recessed to one side from the third direction. The aforementioned recessed portion is connected to the periphery of the aforementioned first surface of the aforementioned first end portion.

5. The semiconductor device according to claim 4, characterized in that, The first end has an intermediate surface located between the first surface and the first end face in the second direction and connected to the first surface. When viewed in the second direction, the intermediate surface overlaps with the first main part. The first end face is located between the middle face and the second face in the first direction.

6. The semiconductor device according to claim 5, characterized in that, The dimension of the second direction of the intermediate surface is smaller than the dimension of the first surface of the first end in the second direction.

7. The semiconductor device according to claim 6, characterized in that, The aforementioned intermediate surface is inclined relative to the aforementioned first surface towards the inner side of the aforementioned first end in the aforementioned first direction.

8. The semiconductor device according to claim 6, characterized in that, The dimension of the first end face in the first direction is smaller than the dimension of the first end face in the third direction.

9. The semiconductor device according to claim 3, characterized in that, A recessed portion that is recessed from the second surface is provided at the first end. The aforementioned trapped part is connected to the aforementioned first main part.

10. The semiconductor device according to any one of claims 3 to 9, characterized in that, The first connecting portion is inclined relative to the mounting surface on the side away from the pad portion in the second direction.

11. The semiconductor device according to claim 10, characterized in that, The first lead has a second support portion, which is located on the opposite side of the first support portion in the second direction, with reference to the pad portion, and is connected to the pad portion. The second support portion has: a third surface facing the same side as the top surface in the first direction and covered by the sealing resin; a fourth surface facing the opposite side of the third surface in the first direction and covered by the sealing resin; and a second end surface facing the opposite side of the first end surface in the second direction and exposed from the sealing resin. The dimension of the sealing resin in the first direction from the bottom surface to the fourth surface is smaller than the dimension of the sealing resin in the first direction from the top surface to the third surface. The dimension of the fourth surface in the second direction is more than 50% of the dimension of the second direction of the area of ​​the bottom surface that is adjacent to the pad portion on one side of the second direction and overlaps with the fourth surface when viewed in the first direction.

12. The semiconductor device according to claim 11, characterized in that, The second support portion includes: a second main portion comprising the third and fourth surfaces; a second connecting portion connected to the second main portion and the pad portion; and a second end portion located on the opposite side of the second connecting portion in the second direction, with reference to the second main portion, and connected to the second main portion. The aforementioned second end portion includes the aforementioned third surface and the aforementioned second end surface. The cross-sectional area of ​​the second end portion along a direction orthogonal to the second direction decreases from the second main portion to the second end face.

13. The semiconductor device according to claim 12, characterized in that, The first lead has a third support portion, which is located on the same side as the first support portion in the second direction, with the pad portion as a reference, and is connected to the pad portion. The aforementioned third support part separates from the aforementioned first support part in the aforementioned third direction. The aforementioned third support portion has a third end face that faces the same side as the aforementioned first end face in the aforementioned second direction and is exposed from the aforementioned sealing resin. The cross-sectional area of ​​the third support portion along a direction orthogonal to the second direction decreases from the side where the solder pad portion is located to the third end face.

14. The semiconductor device according to claim 12, characterized in that, The aforementioned sealing resin has a first side surface and a second side surface that face opposite sides to each other in the aforementioned second direction. The aforementioned first side surface includes: a first region that includes the aforementioned first direction as an in-plane direction; a second region located between the first region and the aforementioned top surface in the aforementioned first direction; and a third region located on the opposite side of the aforementioned second region, with the first region as a reference. The second and third regions mentioned above are inclined relative to the first region mentioned above. The first end face is exposed from the first region. The aforementioned second end face is exposed from the aforementioned second side face.

15. The semiconductor device according to claim 14, characterized in that, The tilt angle of the second region relative to the first region is greater than the tilt angle of the third region relative to the first region.

16. The semiconductor device according to claim 15, characterized in that, The first end face is separated from the first region on the side where the solder pad is located in the second direction.

17. The semiconductor device according to claim 14, characterized in that, It also has a second lead that is connected to the aforementioned semiconductor element. The aforementioned sealing resin has a third side facing the aforementioned third-direction side. The second lead protrudes from the third side mentioned above.

18. The semiconductor device according to claim 17, characterized in that, It also includes a conductive wire that is electrically connected to the aforementioned semiconductor element and the aforementioned second lead. The second lead has a connecting surface that faces the same side as the mounting surface in the first direction and is covered by the sealing resin. The aforementioned connecting surface is located between the aforementioned top surface and the aforementioned mounting surface in the aforementioned first direction. The aforementioned wires are electrically connected to the aforementioned connecting surfaces.

19. The semiconductor device according to claim 18, characterized in that, The aforementioned semiconductor element has an element surface that faces the same side as the mounting surface in the aforementioned first direction. The aforementioned component surface is located in the first direction between the aforementioned top surface and the aforementioned first surface and the aforementioned third surface.

20. The semiconductor device according to claim 19, characterized in that, The aforementioned connecting surface is located between the aforementioned component surface and the aforementioned mounting surface in the aforementioned first direction.

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