An online adjustable aperture assembly, adjustment method and etching device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FOSHAN IBD TECH CO LTD
- Filing Date
- 2026-03-02
- Publication Date
- 2026-06-05
Smart Images
Figure CN121768932B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of ion beam etching technology, and more specifically, to an online adjustable aperture assembly, an adjustment method, and an etching apparatus. Background Technology
[0002] Ion beam etching is a high-precision machining technique that uses a high-energy ion beam generated and accelerated by an ion source in a vacuum chamber to directionally bombard the surface of a sample and remove surface material. Ion beam etching offers advantages such as strong directionality, high precision in morphology control, no ion-damaged layer, and no plasma contamination, and is widely used in the fabrication of optical communication filters, photomasks, microgratings, MEMS, magnetic multilayer films, and semiconductor heterojunction devices.
[0003] During the etching process of large-size or highly uniform devices, the distribution of the ion beam on the processing surface is non-uniform due to factors such as the gas distribution in the discharge chamber, the coupling efficiency of the ion source coil, the aperture distribution of the accelerating gate, the space charge effect of the neutralizer, and the mask pattern structure. Common patterns include "center peak type", "double peak type" or "edge attenuation type". This results in uneven etching depth on the processing surface. In other words, due to the limitation of the ion source beam diameter, ion beam etching is difficult to achieve the processing of large-size or highly uniform devices.
[0004] In existing technologies, the following solutions exist to overcome the technical problem of uneven ion beam distribution on the processing surface: 1. Install an aperture at the ion source outlet to control the beam width or weaken the high-throughput region by blocking. Although the modification cost is low, it requires manual adjustment of the aperture size, cannot be adjusted in real time, and requires vacuum destruction and reconstruction; 2. Change the operating parameters of the ion source by adjusting the internal operating parameters, such as ionization current, power, or bias voltage, to achieve uniform ion beam distribution. However, the adjustment process is complex, the regional response is inconsistent, the processing conditions are difficult to reproduce, and there are problems such as discharge drift and low processing yield; 3. Adjust the residence time of the ion source to make the beam dose in different areas of the processing surface nearly uniform. However, this can only control the macroscopic energy of the ion beam, and the non-uniform distribution at the ion source end remains unchanged, resulting in low processing accuracy; 4. Change the beam distribution used for etching by superimposing multiple ion source beams. However, this results in a large cavity structure, high equipment cost, and multi-source interference problems. Therefore, for applications involving the etching of large-size or highly uniform devices using existing ion beam techniques, there is an urgent need for a processing device that balances stability and real-time adjustment. Summary of the Invention
[0005] This application addresses the shortcomings of existing methods by proposing an online adjustable aperture assembly, adjustment method, and etching device to solve the technical problem of incompatibility between stability and real-time adjustment in ion beam etching of large-size or highly uniform devices.
[0006] First aspect:
[0007] One embodiment of this application provides an online adjustable aperture assembly, including:
[0008] The frame includes frame plate components symmetrically distributed along the beam central axis of the ion beam, the frame defining through-holes for the passage of the ion beam;
[0009] An aperture component is disposed in the frame plate component, and at least two sets of aperture components are provided;
[0010] Piezoelectric components are used to correspond one-to-one with the aperture components and are disposed on the frame plate components;
[0011] The piezoelectric component is used to drive the aperture component, so that the aperture component shields the portion of the through hole, thereby adjusting the beam current distribution of the ion beam.
[0012] Specifically, the main technical concept of this application is to use a piezoelectric component to control an aperture component, so that the aperture component can dynamically adjust the beam current distribution of the ion beam passing through the through hole. This allows the uniformity of ion beam etching to be controlled without stopping the equipment, solving the technical problem that the ion beam current distribution cannot be adjusted online in the prior art. This makes the application have both processing stability and real-time adjustability.
[0013] Furthermore, the aperture component includes a pair of aperture blocks, which are respectively disposed on both sides of the central axis;
[0014] The aperture components are arranged along the first direction, and the aperture blocks of each aperture component abut against each other;
[0015] The piezoelectric component is used to drive the aperture block to move along the second direction;
[0016] Wherein, the first direction refers to the direction perpendicular to the central axis and along the direction with the largest beam divergence angle of the ion beam, and the second direction refers to the direction perpendicular to the central axis and along the direction with the smallest beam divergence angle of the ion beam.
[0017] Furthermore, the through hole is configured as a rectangle, and the center normal of the through hole coincides with the central axis.
[0018] Specifically, another technical concept of this application is to limit the shape of the through hole so that the central region of the ion beam can be cut off, making it easier to modify the ion beam and thus improve the efficiency of ion beam control.
[0019] Furthermore, the online adjustable aperture assembly provided in this application also includes:
[0020] The first detection component is used to detect the beam distribution in the aperture region;
[0021] A control component, connected to the first detection component and each of the piezoelectric components respectively, is used to adjust the piezoelectric components according to the beam current distribution of the aperture region, so that the beam current distribution of each aperture region tends to be consistent;
[0022] The aperture region refers to the area through which the ion beam passes between the aperture blocks of the aperture component.
[0023] Specifically, another technical concept of this application is to control the propagation source of the ion beam by combining the first detection component with the control component, thereby improving the uniformity of the overall beam current distribution of the ion beam used for etching.
[0024] Furthermore, the online adjustable aperture assembly provided in this application also includes:
[0025] The second detection component is used to detect the etching depth of the etched area;
[0026] The control component is used to adjust the piezoelectric component according to the etching depth of the etching region, so that the etching depth of each etching region tends to be consistent;
[0027] The etched area refers to the exposed area of the substrate corresponding to the ion beam after passing through the aperture area.
[0028] Specifically, another technical concept of this application is to modify and compensate the ion beam propagation process based on the etching result, so that the ion beam that finally reaches the etching area can uniformly etch the etching area, thereby improving the etching accuracy of this application.
[0029] Furthermore, the control component includes:
[0030] Compare the etching depths described above;
[0031] When any of the etching depths is less than the other etching depths, the piezoelectric component is controlled to expand the passage area of the corresponding aperture region;
[0032] When any of the etching depths is greater than the other etching depths, the piezoelectric component is controlled to reduce the passing area of the corresponding aperture region.
[0033] Furthermore, the control component also includes: recording the control state of each piezoelectric component or the shielding state of each aperture block when the etching depths are consistent.
[0034] Specifically, another technical concept of this application lies in recording the control state of the piezoelectric component based on the etching result. This allows the application to replicate the shielding state of the aperture component to the through-hole during mass production, enabling the application to be reused in other equipment and improving the efficiency of mass production. Furthermore, this application can also be applied to aperture assemblies without piezoelectric components based on the shielding state of the aperture component, allowing the application to be primarily used for sample testing before mass production, thereby extending the application's service life.
[0035] Optionally, each of the aperture blocks is connected to at least two sets of piezoelectric components, which are used to control the movement of the aperture block by superimposing or canceling the phase sequence, driving frequency and driving amplitude of the piezoelectric components.
[0036] Specifically, another technical concept of this application is to improve the control accuracy and control efficiency of the aperture component by utilizing the coordinated adjustment of at least two sets of piezoelectric components.
[0037] The second aspect:
[0038] This application provides a method for adjusting the uniformity of ion beam etching online, employing an online adjustable aperture assembly as provided in any possible embodiment of the first aspect, and includes the following steps:
[0039] Controlling the ion beam through the through-hole defined by the frame;
[0040] The aperture component is driven by a piezoelectric component, which shields the through-hole portion to adjust the beam current distribution of the ion beam.
[0041] Specifically, this application provides a method for adjusting the uniformity of ion beam etching online, based on the aperture assembly provided in the first aspect. It is understood that the beneficial effects provided by any possible embodiment of the second aspect can be understood in conjunction with the beneficial effects provided by any possible embodiment of the first aspect.
[0042] Third aspect:
[0043] This application provides an etching apparatus for online adjustment of ion beam etching uniformity, including an ion source, an etching platform, and an aperture structure disposed between the ion source and the etching platform. The aperture structure employs an online adjustable aperture assembly as provided in any possible embodiment of the first aspect. It is understood that the technical effects of any possible embodiment of the third aspect can be understood with reference to the technical effects of any possible embodiment of the first aspect.
[0044] The beneficial technical effects of the technical solutions provided in this application include:
[0045] The frame plate assembly provides through-holes for the ion beam to pass through. Then, utilizing the shielding effect of the aperture component, the beam current distribution of the ion beam actually passing through the through-hole is adjusted. By combining multiple sets of aperture components, the beam current distribution in different parts of the through-hole is adjusted, resulting in a uniform beam current distribution after the ion beam passes through the through-hole, thereby improving the etching reliability and etching accuracy of this application. Simultaneously, the aperture component is driven by a piezoelectric component, eliminating the need to stop the machine and break the vacuum before adjusting the aperture component. This allows for real-time adjustment of the ion beam current distribution uniformity, making this application widely applicable to applications with high ion beam etching requirements. Furthermore, the aperture component of this application can be easily positioned between the ion source and the processing stage, giving it the advantages of low cost and simple structure.
[0046] Additional aspects and advantages of this application will be set forth in part in the description which follows, and will become apparent from the description or may be learned by practice of this application. Attached Figure Description
[0047] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:
[0048] Figure 1 This is a schematic diagram of an etching apparatus for online adjustment of ion beam etching uniformity provided in an embodiment of this application;
[0049] Figure 2 A schematic diagram of the structure of an online adjustable aperture assembly provided in an embodiment of this application;
[0050] Figure 3 for Figure 2 A schematic diagram of the structure after the outer support plate is hidden;
[0051] Figure 4 Left view of the mutually abutting aperture blocks;
[0052] Figure 5 A schematic diagram of the aperture region provided in an embodiment of this application;
[0053] Figure 6 A schematic diagram of the etched area provided in an embodiment of this application;
[0054] Figure 7 This is a schematic diagram of ion beam etching provided in one embodiment of this application;
[0055] Figure 8 A schematic diagram of the composition of a control system provided in an embodiment of this application;
[0056] Figure 9 A schematic diagram illustrating the modification of rectangular and elliptical beam spots according to an embodiment of this application;
[0057] Figure 10 A schematic flowchart illustrating an online method for adjusting the uniformity of ion beam etching, provided in an embodiment of this application;
[0058] Figure 11 Provided for an embodiment of this application Figure 5 Schematic diagram of sectional view along direction AA;
[0059] Figure 12 Provided for an embodiment of this application Figure 11 An enlarged view of point B;
[0060] Figure label:
[0061] 1. Aperture assembly; 2. Ion source; 3. Substrate; 4. Etching platform; 5. Vacuum environment; 11. Frame; 12. Aperture component; 13. Piezoelectric component; 21. Rectangular beam spot; 22. Elliptical beam spot; 31. Etching area; 111. Frame plate component; 112. Through hole; 121. Aperture block; 131. Piezoelectric actuator; 132. Elastic part; 111a. Support plate; 111b. Support column; 112a. Aperture area; 121a. Fitting structure. Detailed Implementation
[0062] The embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the accompanying drawings are exemplary descriptions for explaining the technical solutions of the embodiments of this application, and do not constitute a limitation on the technical solutions of the embodiments of this application.
[0063] Those skilled in the art will understand that, unless specifically stated otherwise, the terms "described" and "the" as used herein may also include plural forms. It should be further understood that the term "comprising" as used in the specification of this application means the presence of the stated features, integers, steps, operations, elements, and / or components, but does not exclude other features, information, data, steps, operations, elements, components, and / or combinations thereof supported by this art. The term "and / or" as used herein refers to at least one of the items defined by the term; for example, "A and / or B" can be implemented as "A," or as "B," or as "A and B."
[0064] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.
[0065] This application mainly relates to an online adjustable aperture assembly, adjustment method, and etching apparatus. The online adjustment of the aperture assembly is achieved through a piezoelectric component, thereby adjusting the distribution of the ion beam current through the frame through-hole, which can improve the uniformity and accuracy of ion beam etching.
[0066] The research and development concept of this application includes: setting an adjustable aperture assembly between the ion source and the substrate, so that the beam current distribution of the ion beam can be adjusted, thereby ensuring the uniformity of ion beam etching and improving etching accuracy. Simultaneously, the structure of the aperture assembly is designed to adjust the shielding state of the aperture assembly through piezoelectric components, thereby achieving online adjustment of the ion beam current distribution. This application combines the advantages of adjustable ion beam current distribution and real-time adjustment of the ion beam current distribution.
[0067] The technical solution of this application and how it solves the above-mentioned technical problems are described in detail below with specific embodiments. It should be noted that the following embodiments can be referenced, borrowed, or combined with each other, and the same terms, similar features, and similar implementation steps in different embodiments will not be described again.
[0068] Optionally, this application describes the technical solution provided in this application in the order of the etching apparatus for online adjustment of ion beam etching uniformity to the aperture assembly 1 in the etching apparatus. Please refer to [link / reference]. Figure 1 This is a schematic diagram of an etching apparatus for online adjustment of ion beam etching uniformity, provided in an embodiment of this application.
[0069] The etching apparatus for online adjustment of ion beam etching uniformity provided in this application includes an ion source 2, an etching platform 4, and an aperture assembly 1 disposed between the ion source 2 and the etching platform 4. The ion source 2 refers to a device that ionizes neutral atoms or molecules and extracts an ion beam. The ion source 2 includes common spatial ionization ion sources, surface ionization ion sources, etc. The ion source 2 provided in this application serves to provide an ion beam for ion beam etching. The etching platform 4 is used to provide mounting and positioning of the substrate 3 and to move the substrate 3. The aperture assembly 1 is used to adjust the uniformity of the ion beam distribution. It is understood that the etching apparatus provided in this application also includes a vacuum chamber (not shown in the figure) to provide a vacuum environment 5 for ion beam etching of the substrate 3.
[0070] Ion source 2 is configured as a rectangular ion source based on the shape of the through-hole 112 of the aperture assembly 1. Compared to the common elliptical ion source, the beam spot shape of the rectangular ion source is quasi-rectangular, for example, approximately rounded rectangle, thus adapting to the rectangular through-hole 112, reducing ion energy loss after the ion beam is shielded by the aperture assembly 1, improving the utilization rate of the ion beam, and reducing energy loss. It is understandable that the beam spot of common ion sources exhibits various forms of quasi-elliptical shapes depending on the ion beam divergence angle, and rarely presents a standard circular shape. Similarly, the beam spot of the rectangular ion source will not be a standard rectangle, but rather a quasi-rectangular shape.
[0071] Substrate 3 includes optical materials or semiconductor materials, such as quartz, silicon wafers, etc.
[0072] The etching platform 4 is configured as a worktable that can move within the vacuum chamber, thereby driving the substrate 3 to be etched to move, so that the areas of the substrate 3 to be etched are exposed to the ion beam in sequence, realizing continuous etching of the substrate 3, and thus realizing ion beam etching processing of large-size substrate 3.
[0073] Therefore, in this application, the ion source 2, the aperture assembly 1, and the etching platform 4 are arranged sequentially, and the ion beam generated by the ion source 2 (refer to...) Figure 1 The ion beam (marked by the dashed line in the diagram) passes through the aperture assembly 1 and irradiates the substrate 3 mounted on the etching platform 4, thus achieving the etching process on the substrate 3. The ion beam propagates along the y-axis, which is the central axis of the ion beam. It can be understood that during the transmission, focusing, and bombardment of the target, the beam cross-section / beam spot gradually expands with increasing propagation distance, resulting in a larger beam spot size and lower energy density. That is, as the ion beam diverges away from the central axis, its energy density gradually decreases. If the distribution of the ion beam is not constrained, the distribution on the substrate 3 will exhibit an uneven central peak, double peak, or edge attenuation pattern, resulting in inconsistent etching depths on the substrate 3 and making it impossible to achieve the high uniformity requirements of the substrate 3. Therefore, based on the divergence characteristics of the ion beam… Figure 1 The z-axis direction is used to identify the direction perpendicular to the central axis and with the largest divergence angle along the ion beam, i.e., the first direction. The x-axis direction is used to identify the direction perpendicular to the central axis and with the smallest divergence angle along the ion beam, i.e., the second direction. Therefore, the ion beam irradiates along the y-axis direction, and the aperture component 12, the substrate 3, and the etching platform 4 are all disposed in the xz plane. Of course, the etching platform 4 can also rotate around the x-axis or z-axis, having rotational freedom, making this application applicable to other special processing scenarios.
[0074] In summary, the working principle of the etching apparatus for online adjustment of ion beam etching uniformity provided in this application embodiment is as follows: the outer edge of the ion beam diameter is shielded by the aperture assembly 1, so that the peak of the ion beam distribution is flattened and / or the edge attenuation is blocked, thereby achieving ion beam shaping. This ensures that the energy density of each part of the beam spot ultimately irradiated on the substrate 3 remains essentially consistent, thus achieving uniform etching of the substrate 3 surface. Therefore, this application can be applied to substrate 3 etching scenarios with high uniformity requirements.
[0075] Furthermore, the aperture assembly 1 includes: a frame 11, an aperture component 12, and a piezoelectric component 13. Please refer to [reference needed]. Figure 2 and Figure 3 , Figure 2 This is a schematic diagram of the structure of an online adjustable aperture assembly 1 provided in an embodiment of this application. Figure 3 for Figure 2 A schematic diagram showing the structure after concealing the outer support plate 111a. The frame 11 provides structural support; its exterior connects to the shell of the etching apparatus, forming a mounting platform and a foundation for connecting the aperture component 12 and the piezoelectric component 13 to external components, such as wiring and communication foundations (not shown). The interior of the frame 11 mounts the aperture component 12 and the piezoelectric component 13, providing mounting support for the functional components. The aperture component 12 is used to adjust and modify the beam current distribution of the passing ion beam. The piezoelectric component 13 is used to adjust the shielding state of the aperture component 12.
[0076] The frame 11 includes a frame plate component 111 and a through hole 112 defined by the central hollow of the frame plate component 111.
[0077] The frame plate component 111 is configured as two opposing support plates 111a, which are supported by support columns 111b to form an installation space between them. The aperture component 12 and the piezoelectric component 13 are then installed within this space. Simultaneously, the side of the support plate 111a facing the ion beam has a shielding function, for example, by coating to shield the ion beam. The side of the support plate 111a facing the aperture component 12 and the piezoelectric component 13 has a sliding function, for example, by providing a sliding track structure or a sliding surface, such as a ceramic sliding surface. Furthermore, the side of the support plate 111a facing the aperture component 12 can be polished to form a smooth surface; the support plate 111a can also be bonded together, with one side configured as a shielding layer resistant to ion beam bombardment, such as graphite, molybdenum, or titanium, and the other side configured as a sliding layer with low friction, such as ceramic or mirrored metal.
[0078] Optionally, the support plate 111a is also provided with an electrical connection channel (not shown in the figure), one end of which is connected to the piezoelectric component 13 and the other end of which is connected to the control component. This not only enables electrical connection but also avoids the limitation of the electrical connection structure by the vacuum environment 5.
[0079] The through-hole 112 has its central normal coinciding with the central axis of the ion beam, that is, the central normal of the through-hole 112 coincides with the y-axis direction, so that the through-hole 112 and the ion beam generated by the rectangular ion source are spatially consistent, which is beneficial for the subsequent adjustment of the ion beam distribution by the aperture component 12.
[0080] The aperture component 12 includes opposing aperture blocks 121, i.e., two aperture blocks 121 are respectively disposed on both sides of the y-axis, and any aperture block 121 is slidably connected to the inner wall of the support plate 111a, having degrees of freedom to move in the x-axis direction and away from the x-axis direction. Meanwhile, multiple sets of aperture components 12 are arranged sequentially along the z-axis direction, with the aperture blocks 121 of each aperture component 12 abutting against each other. The aperture blocks 121 can also be interlocked by a fitting structure 121a to ensure the shielding effect at the contact points of the aperture blocks 121. Please refer to [reference needed]. Figure 4 Left view of the mutually abutting aperture blocks 121. The interlocking structure 121a can be as follows: Figure 4 The schematic diagram of overlapping and interlocking on one side can also be an interlocking structure 121a such as a groove and a ridge. This application does not impose many restrictions on the interlocking structure 121a, as long as the two abutting aperture blocks 121 achieve partial overlap at their abutting positions through the interlocking structure 121a. That is, multiple aperture components 12 can shield the ion beam through aperture blocks 121, and can have different shielding areas. Please refer to [reference needed]. Figure 5 This is a schematic diagram of an aperture region 112a provided in an embodiment of this application. By adjusting each aperture block 121, the shielding size of different aperture components 12 on the through-hole 112 is made different, thereby forming aperture regions 112a of different sizes. The aperture region 112a refers to the ion beam passage area defined between the aperture blocks 121 of an aperture component 12. That is, this application can control the size of the aperture region 112a to shield and modify the ion beam passing through it, thereby adjusting the beam current distribution of the ion beam to ensure that the energy density of the area irradiated by the ion beam on the substrate 3 remains consistent, thus achieving uniform etching of the substrate 3. It is understood that... Figure 5 This is only one of the adjustment states of each aperture component 12. The shape formed after the aperture component 12 shields the through hole 112 can have a variety of other styles according to actual processing requirements, such as flared type, anisotropic type, etc. This application does not impose too many limitations.
[0081] Optionally, the aperture block 121 may be made of a material resistant to ion beam bombardment, such as graphite, molybdenum, or titanium, and its surface may be polished and treated to prevent sputtering, in order to ensure the shielding effect and durability of the aperture block 121. Understandably, the size of the aperture block 121 may be set to 20mm-100mm depending on the beam diameter of the ion beam.
[0082] The piezoelectric component 13, configured as a piezoelectric structure such as piezoelectric ceramic, is used to adjust the position of the aperture block 121 relative to the support plate 111a based on the piezoelectric effect. The piezoelectric effect refers to an electromechanical coupling effect exhibited by certain anisotropic dielectrics. One side of the piezoelectric component 13 is fixed to the inner wall of the support plate 111a, for example, by fitting it into the support plate 111a, while the other side is in elastic contact with the aperture block 121. When the piezoelectric component 13 is not driven, it elastically presses the surface of the aperture block 121, positioning it in a fixed state between the support plates 111a. When the piezoelectric component 13 is driven, it generates high-frequency vibration, thereby pushing the aperture block 121 at high frequency according to the frictional stepping principle, causing the aperture block 121 to move towards or away from the x-axis direction, thus achieving online adjustment of the aperture component 121. It is understandable that the frictional stepping principle refers to the longitudinal expansion and lateral shearing of the piezoelectric component 13 at the microscopic level, which generates friction between the contact surface of the piezoelectric component 13 and the aperture block 121, thereby pushing the aperture block 121. When the piezoelectric component 13 stops driving, due to the elastic contact between the piezoelectric component 13 and the aperture block 121, the aperture block 121 will be clamped between the support plates 111a.
[0083] Optionally, the piezoelectric components 13 can be disposed on both sides of the aperture block 121 along the y-axis. Simultaneously, at least two sets of piezoelectric components 13 can be disposed on one side. Since the frequency, phase, and phase direction of the high-frequency vibration of the piezoelectric components 13 can be adjusted, the moving speed and direction of the aperture block 121 can be controlled by superimposing and canceling the vibration frequencies of the piezoelectric components, thereby improving the accuracy and efficiency of real-time adjustment. For example, changing the phase direction of the piezoelectric components changes the sliding direction of the aperture block 121; increasing the driving frequency increases the moving speed of the aperture block 121; superimposing the phases of the piezoelectric components increases the moving step size of the aperture block 121, or canceling the phases of the piezoelectric components decreases the moving step size of the aperture block 121, etc. Therefore, the piezoelectric component 13 of this application can achieve micron-level improvement of the aperture block 121, combining both control efficiency and control accuracy. It is understood that the support plate 111a is also provided with a limiting groove (not shown in the figure). The limiting groove is used to limit the starting point and ending point of the movement of the aperture block 121, preventing the aperture block 121 from rushing out of the slide due to inertial drift, thus ensuring the reliability of this application. Therefore, this application can realize the real-time adjustment of the aperture assembly 1, without having to stop the machine to adjust the aperture assembly 1 as in the prior art, which can ensure the consistency and efficiency of the substrate 3 processing. At the same time, the piezoelectric component 13 combined with the aperture component 12 eliminates the need for a traditional transmission mechanical structure, making the adjustment structure simpler and more reliable.
[0084] Optionally, the working principle of the piezoelectric component 13 is as follows: by controlling the deformation state of the elastic contact interface between the piezoelectric component 13 and the aperture block 121, the aperture block 121 is pushed. The piezoelectric component 13 can convert electrical energy into mechanical energy, that is, the piezoelectric component 13 undergoes mechanical deformation after being excited, for example, a shear-type piezoelectric ceramic. Simultaneously, the direction of the mechanical deformation of the piezoelectric component 13 is affected by the phase direction, that is, by the positive or negative electrical signal. For example, under a positive electrical signal, positive mechanical deformation is generated, and as the mechanical deformation reciprocates, the aperture block 121 is pushed forward in the positive direction according to the elastic contact between the piezoelectric component 13 and the aperture block 121; or, under a negative electrical signal, negative mechanical deformation is generated, pushing the aperture block 121 forward in the negative direction. In other words, by controlling the phase direction of the piezoelectric component 13, the direction of the mechanical deformation can be changed, thereby realizing the reciprocating pushing of the aperture block 121. Furthermore, the height of the mechanical deformation of the piezoelectric component 13 is affected by the phase amplitude. The larger the phase amplitude, the greater the mechanical deformation, and the greater the distance pushed by a single mechanical deformation. That is, the superposition of phases can control the step size of the aperture block 121 in one step. The frequency of the piezoelectric component 13 is used to control the number of mechanical deformations per unit time. That is, although the frictional force generated by a single mechanical deformation of the piezoelectric component 13 is small, and the step size of pushing the aperture block 121 is small, the high-frequency vibration of the piezoelectric component 13 can achieve a large-scale push of the aperture block 121 per unit time. In other words, by controlling the frequency of the piezoelectric component 13, the moving distance of the aperture block 121 per unit time can be controlled.
[0085] Further, please refer to Figure 11 and Figure 12 , Figure 11 Provided for an embodiment of this application Figure 5 Schematic diagram of sectional view along line AA. Figure 12 Provided for an embodiment of this application Figure 11 The enlarged schematic diagram at point B is shown. The piezoelectric component 13 also includes a piezoelectric actuator 131 and an elastic part 132. The piezoelectric actuator 131 is disposed on the side of the support plate 111a, and is fixed to the surface of the support plate 111a by processes including but not limited to physical deposition, welding, or bonding. Simultaneously, the piezoelectric actuator 131 is wired and powered through the support plate 111a. The elastic part 132 is connected to the piezoelectric actuator 131 or the aperture block 121, and is disposed on the side of the piezoelectric actuator 131 or the aperture block 121 by processes including but not limited to bonding or coating. When the piezoelectric actuator 131 is not energized, the elastic part 132 is used to press the aperture block 121 between the piezoelectric actuator 131 and the support plate 111a, thereby positioning the aperture block 121. Simultaneously, the elastic part 132 is also used to increase the frictional force between the piezoelectric actuator 131 and the aperture block 121. The piezoelectric actuator 131 generates high-frequency vibrations after being excited, and each vibration will produce mechanical deformation. (Refer to...) Figure 12As shown by the dashed line, when the piezoelectric actuator 131 undergoes mechanical deformation in the direction of the dashed line, it will push the aperture block 121 to move in the direction of mechanical deformation (the direction of the dashed line) through friction. Based on the alternating mechanical recovery and mechanical deformation during the high-frequency vibration of the piezoelectric actuator 131, the aperture block 121 will be continuously pushed in the direction of the dashed line, thus producing macroscopic movement, and thereby realizing the movement of the aperture block 121 relative to the support plate 111a. It can be understood that when the piezoelectric actuator 131 moves in the direction of the dashed line... Figure 12 When the middle dashed line undergoes mechanical deformation in the opposite direction, it is used to drive the aperture block 121 to move in another direction.
[0086] Optionally, the piezoelectric actuator 131 is configured as a single-layer or multi-layer shear-type actuator, and the elastic part 132 is configured as a material with viscoelastic properties such as rubber.
[0087] For a detailed description of the mechanical structures such as frame 11, aperture component 12, and piezoelectric component 13, please refer to [the relevant documentation / reference]. Figure 8 This is a schematic diagram of the control system provided in one embodiment of this application. The online adjustable aperture assembly 1 provided in this application also includes a control assembly, a first detection assembly (not shown in the figure), and a second detection assembly (not shown in the figure). The control assembly can be integrated into the electronic control section of the etching apparatus. Simultaneously, the control assembly is electrically connected to each piezoelectric component 13, and is used to adjust the aperture assembly 12 by stimulating the piezoelectric components 13. Furthermore, the control assembly is also connected to the first and second detection assemblies, respectively, to acquire the beam current distribution of the aperture region 112a and the etching depth of the etching region 31, enabling this application to adjust the aperture assembly 12 according to the beam current distribution and / or etching depth to improve the uniformity of ion beam etching. The first detection assembly is used to detect the beam current distribution of the aperture region 112a, for example, a scanner or probe commonly used for beam current distribution analysis. The second detection assembly is used to detect the etching depth of the etching region 31, for example, a film thickness analyzer or electron diffractometer commonly used for etching depth detection. This application does not impose excessive limitations on the specific types of the first and second detection assemblies. It is understandable that the first detection component and the second detection component can be installed on the aperture assembly 1, on the etching platform 4, or on the housing of the etching device.
[0088] Therefore, please refer to Figure 6This is a schematic diagram of an etching region 31 provided in an embodiment of this application. The etching region 31 refers to the exposure area of the substrate corresponding to the ion beam after passing through the aperture region 112a. That is, the number of etching regions 31 corresponds one-to-one with the aperture regions 112a. This application first adjusts the beam current distribution of the source ion beam by adjusting the beam current distribution of the ion beam to keep the beam current distribution of the source ion beam consistent, ensuring the basic etching accuracy of the ion beam etching of the substrate 3. Then, the aperture component 12 is further fine-tuned by adjusting the etching depth to make the theoretically uniformly distributed ion beam current tend to be a practically uniformly distributed ion beam current, thereby improving the etching uniformity of the finally etched substrate 3. That is, the control component first performs initial adjustment on the aperture component 12 according to the beam current distribution obtained by the first detection component to make the beam current distribution of each aperture region 112a tend to be consistent. Then, the control component, based on the actual etching depth obtained by the second detection component, fine-tunes the aperture component 12 to make the etching depth of each etching region 31 more consistent, thereby improving the final etching distribution uniformity. The fine-tuning of the aperture component 12 includes: comparing each etching depth; when any etching depth is less than the others, controlling the piezoelectric component 13 to expand the passage area of the corresponding aperture region 112a; when any etching depth is greater than the others, controlling the piezoelectric component 13 to shrink the passage area of the corresponding aperture region 112a.
[0089] In summary, combining other illustrations and referring to... Figure 7 This is a schematic diagram of ion beam etching according to an embodiment of this application, illustrating the working principle of the online adjustable aperture assembly 1 provided in this application: First, the substrate 3 is placed on the etching platform 4. Then, the ion source 2 is activated, and the ion beam generated by the ion source 2 irradiates the substrate 3 through the through-hole 112. During the passage of the ion source 2 through the through-hole 112, the beam current distribution of the ion beam in the aperture region 112a is detected by the first detection component. Based on the detection result of the first detection component, the control component adjusts the position of the aperture assembly 12 relative to the support plate 111a through the piezoelectric component 13 to define different aperture regions 112a within the through-hole 112, thereby achieving shielding and segmentation of the ion beam diameter. By reducing the peak value of the ion beam and shielding the attenuation region, the beam current distribution of the ion beam in each aperture region 112a tends to be consistent. Then, the second detection component detects the etching depth of the etched area 31 of the substrate 3. Based on the detection results of the second detection component, the control component again fine-tunes the position of the aperture component 12 relative to the support plate 111a through the piezoelectric component 13, so that the etching depth of the etched area 31 tends to be consistent, thereby improving the uniformity of etching of the substrate 3. At the same time, after completing the etching of a region of the substrate 3, the etching platform 4 moves the substrate 3 forward along the x-axis, thereby realizing continuous etching of the substrate 3 and achieving uniform etching of large-size substrate 3. Figure 7The solid lines between the substrate 3 and the etching platform 4 correspond to the current etching position of the substrate 3 by the ion beam, while the dashed lines between the substrate 3 and the etching platform 4 correspond to the previous etching position of the substrate 3 by the ion beam. The continuous dashed boxes in the middle are used to mark the continuous transfer of the etching area 31. This application can be used in large-size applications with high etching uniformity requirements. Simultaneously, the control component can record the control state of each piezoelectric component 13 while maintaining a consistent etching depth, giving this application good reproducibility. That is, the aperture component 1 provided in this application can be used in the trial production stage before mass production. After the yield in the trial production stage meets the requirements, the state of the aperture component 1 can be replicated to other structures without piezoelectric components 13, thereby improving the service life of the piezoelectric components 13 and reducing production costs. It is understood that the recording of the control state of the piezoelectric components 13 in this application can be achieved by reading the output parameters of the control component. Alternatively, this can be achieved by measuring the position of the aperture block 121, for example, by obtaining the position information of each aperture block 121 through an additionally configured position sensor, such as an image sensor or an infrared sensor.
[0090] Furthermore, the ion source 2 of this application is configured as a rectangular ion source according to the shape of the through-hole 112. Since the aperture assembly 1 primarily shields the direction with the smallest ion beam divergence angle, while preserving the beam spot in the direction with the largest ion beam divergence angle as much as possible, the aperture assembly 1 can shield the ion beam as little as possible, reducing useless ion beam losses and improving energy utilization. Simultaneously, the beam spot generated by the rectangular ion source is a rectangular beam spot 21, which, compared to an elliptical beam spot 22, has less shielding and higher energy utilization. (See reference...) Figure 9 This is a modified schematic diagram of a rectangular beam spot 21 and an elliptical beam spot 22 provided in one embodiment of this application. The rectangular beam spot 21 is only partially shielded by the aperture assembly 1 relative to the working area indicated by the dashed line, while most of the elliptical beam spot 22 is shielded by the aperture assembly 1. That is, the rectangular ion source can have less ineffective loss and better energy utilization compared to a conventional ion source. It is understood that this application can be used with both conventional ion sources and rectangular ion sources adapted to this application; this application does not impose excessive limitations.
[0091] In some embodiments, this application also provides a method for adjusting the uniformity of ion beam etching online. Please refer to [reference needed]. Figure 10 This is a flowchart illustrating an online method for adjusting the uniformity of ion beam etching, as provided in an embodiment of this application.
[0092] After mounting the substrate 3 onto the etching platform 4, this application first creates a vacuum environment 5 using a vacuum assembly. Then, the ion source 2 is activated via a control assembly, allowing the ion beam to pass through the through-hole 112 defined by the frame 11. Next, the piezoelectric component 13 drives the aperture component 12, causing the aperture component 12 to partially shield the through-hole 112, thereby adjusting the beam current distribution of the ion beam. During the process of the piezoelectric component 13 driving the aperture component 12, the beam current distribution of the aperture region 112a is first acquired by a first detection component. That is, the first detection component detects the beam current distribution of the ion beam passing through each aperture region 112a. Before adjustment begins, each aperture block 121 is in its initial state, meaning each aperture region 112a is of equal size and shape. The control assembly adjusts the position of each aperture block 121 based on the beam current distribution acquired from the aperture region 112a, for example, adjusting it to... Figure 5 When the beam distribution of each aperture region 112a becomes consistent after adjustment, the etching depth of each etching region 31 is then obtained through the second detection component, which can be referenced. Figure 6 If the etching depth of any etching region 31 differs from the etching depth of other etching regions 31, the aperture block 121 is fine-tuned using the following adjustment method: when any etching depth is less than other etching depths, the piezoelectric component 13 is controlled to expand the passage area of the corresponding aperture region 112a; when any etching depth is greater than other etching depths, the piezoelectric component is controlled to shrink the passage area of the corresponding aperture region 112a. This application uses the above adjustment method to make the etching depth of each etching region 31 more consistent. When the etching depth of each etching region 31 obtained by the second detection component is consistent, the control state of each piezoelectric component 13 can be recorded, and the corresponding parameters can be uploaded to the control component, making it easy for operators to reproduce the occlusion state of the via based on the corresponding parameters.
[0093] In summary, this application provides an online adjustable aperture assembly, adjustment method, and etching apparatus. This application utilizes a piezoelectric component 13 to control the aperture component 12, enabling dynamic adjustment of the beam current distribution of the ion beam passing through the through-hole 112. This allows for control of the uniformity of ion beam etching without equipment shutdown, thus combining processing stability and real-time adjustability. Furthermore, after the aperture component 12 is adjusted by the piezoelectric component 13, ensuring uniform etching of the substrate 3 by the ion beam, the adjustment positions of each aperture component 12 that achieves uniform etching of the substrate 3 are recorded. Therefore, this application can manually adjust conventional aperture structures lacking online adjustment capabilities based on the recorded adjustment positions of each aperture component 12, ensuring the position of the conventional aperture structure matches the recorded adjustment positions of each aperture component 12. This solidifies the control structure for etching a specific type of substrate 3, such as quartz, enabling conventional ion beam etching apparatus to achieve uniform ion beam etching and reducing the mass production cost of large-size, highly uniform substrates 3. In addition, the recorded adjustment positions of each aperture component 12 can be quickly restored under offline / shutdown conditions, which facilitates process verification, comparative experiments and parameter optimization of this application.
[0094] Those skilled in the art will understand that the steps, measures, and solutions in the various operations, methods, and processes discussed in this application can be alternated, modified, combined, or deleted. Furthermore, other steps, measures, and solutions in the various operations, methods, and processes discussed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted. Furthermore, steps, measures, and solutions in related technologies that are similar to those disclosed in this application can also be alternated, modified, rearranged, decomposed, combined, or deleted.
[0095] In the description of this application, the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate directions or positional relationships based on the exemplary directions or positional relationships shown in the accompanying drawings. They are used to facilitate the description or simplification of the embodiments of this application and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.
[0096] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.
[0097] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0098] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.
[0099] The above description is only a partial implementation of this application. It should be noted that for those skilled in the art, other similar implementation methods based on the technical concept of this application, without departing from the technical concept of this application, also fall within the protection scope of the embodiments of this application.
Claims
1. An online adjustable aperture assembly for controlling the sputtering characteristics of an ion beam, characterized in that, include: The frame includes frame plate components symmetrically distributed along the beam central axis of the ion beam, the frame defining through-holes for the passage of the ion beam; An aperture component is disposed in the frame plate component, and at least two sets of aperture components are provided; Piezoelectric components are used to correspond one-to-one with the aperture components and are disposed on the frame plate components; The piezoelectric component is used to drive the aperture component, so that the aperture component shields the portion of the through hole, thereby adjusting the beam current distribution of the ion beam; The aperture component includes a pair of aperture blocks, which are respectively disposed on both sides of the central axis; The aperture components are arranged along the first direction, and the aperture blocks of each aperture component abut against each other; The piezoelectric component is used to drive the aperture block to move along the second direction; Wherein, the first direction refers to the direction perpendicular to the central axis and along the direction with the largest beam divergence angle of the ion beam, and the second direction refers to the direction perpendicular to the central axis and along the direction with the smallest beam divergence angle of the ion beam. The first detection component is used to detect the beam distribution in the aperture region; A control component, connected to the first detection component and each of the piezoelectric components respectively, is used to adjust the piezoelectric components according to the beam current distribution of the aperture region, so that the beam current distribution of each aperture region tends to be consistent; Wherein, the aperture region refers to the ion beam passage area defined between the aperture blocks of the aperture component; A vacuum chamber for providing a vacuum environment, and the aperture assembly is disposed in the vacuum chamber; The frame plate component is configured as two opposing support plates, which are supported by support columns to form an installation space; the installation space is used for the installation of the aperture component and the piezoelectric component; The piezoelectric component includes a piezoelectric actuator and an elastic part. The piezoelectric actuator is disposed on the side of the support plate and is powered through an electrical connection channel provided on the support plate. The elastic part is disposed on the side of the piezoelectric actuator and is pressed against the side of the piezoelectric actuator and the aperture block. The support plate has a sliding surface on the side facing the aperture block for sliding the aperture block.
2. The online adjustable aperture assembly as described in claim 1, characterized in that, The through hole is configured as a rectangle, and the center normal of the through hole coincides with the central axis.
3. The online adjustable aperture assembly as described in claim 1, characterized in that, Also includes: The second detection component is used to detect the etching depth of the etched area; The control component is used to adjust the piezoelectric component according to the etching depth of the etching region, so that the etching depth of each etching region tends to be consistent; The etched area refers to the exposed area of the substrate corresponding to the ion beam after passing through the aperture area.
4. The online adjustable aperture assembly as described in claim 3, characterized in that, The control component includes: Compare the etching depths described above; When any of the etching depths is less than the other etching depths, the piezoelectric component is controlled to expand the passage area of the corresponding aperture region; When any of the etching depths is greater than the other etching depths, the piezoelectric component is controlled to reduce the passing area of the corresponding aperture region.
5. The online adjustable aperture assembly as described in claim 4, characterized in that, The control component further includes: recording the control state of each piezoelectric component or the shielding state of each aperture block when the etching depths are consistent.
6. The online adjustable aperture assembly as described in claim 1, characterized in that, Each of the aperture blocks is connected to at least two sets of the piezoelectric components, which are used to control the movement of the aperture block by superimposing or canceling the phase sequence, driving frequency and driving amplitude of the piezoelectric components.
7. A method for adjusting the uniformity of ion beam etching online, comprising an online adjustable aperture assembly as described in any one of claims 1-6, characterized in that, Includes the following steps: Controlling the ion beam through the through-hole defined by the frame; The aperture component is driven by a piezoelectric component, which shields the through-hole portion to adjust the beam current distribution of the ion beam.
8. An etching apparatus for online adjustment of ion beam etching uniformity, comprising an ion source, an etching platform, and an aperture structure disposed between the ion source and the etching platform, characterized in that, The aperture structure employs an online adjustable aperture assembly as described in any one of claims 1-6.