Atmosphere maintaining device and process for sapphire single crystal growth furnace

Abstract

The invention discloses an atmosphere maintaining device and process for a sapphire single crystal growth furnace, and relates to the technical field of crystal growth furnaces. The device comprises a processing furnace, a base is arranged at the bottom of the processing furnace, a driving mechanism is arranged in the base, an air control mechanism is fixedly mounted in an air inlet of the processing furnace, and a bearing frame is fixedly mounted at the top of the output end of the driving mechanism. The monitoring range of the monitoring mechanism is expanded through the reciprocating lead screw, air pressure data of different heights in the processing furnace can be obtained in real time, limitation of traditional fixed-point monitoring is distinguished, monitoring data are more accurate, meanwhile, the air control mechanism and the air exhaust mechanism are matched, fine adjustment is conducted in the atmosphere maintaining process in the processing furnace, and the processing furnace is more stable in atmosphere maintaining. The stability of crystal growth is further optimized, and meanwhile, the activated carbon plate uniformly purifies the discharged gas, so that the pollution to the external environment is reduced.

Description

Technical Field

[0001] This invention relates to the field of crystal growth furnace technology, specifically to an atmosphere maintenance device and process for a sapphire single crystal growth furnace. Background Technology

[0002] During crystal growth, atmospheric conditions such as gas type and pressure have a significant impact on crystal quality. Traditional crystal growth furnaces have difficulty in achieving precise control of the atmosphere, which leads to impurities entering the crystal structure and affecting its performance. With the development of production technology, growth furnaces are constantly being innovated to optimize the crystal growth environment.

[0003] Patent publication number CN223607441U discloses an atmosphere maintenance device for a vacuum crystal growth furnace, relating to the field of crystal growth furnace technology. It includes: a crystal growth furnace body, with a reaction chamber inside the furnace body; a mounting frame fixedly connected to the outer wall of the furnace body; a gas control unit at the upper end of the mounting frame; and a vacuum unit at the upper end of the furnace body. The gas control unit includes two gas storage tanks fixedly connected to the upper end of the mounting frame, with a vacuum pump fixedly connected to the upper end of each tank. The output ends of both pumps are fixedly connected to delivery pipes, and adjusting sleeves are installed on the outer walls of both delivery pipes. By incorporating the vacuum unit, the gas pressure in the reaction chamber can be adjusted to maintain stability. Furthermore, the gas control unit allows for the injection of different gases into the reaction chamber, ensuring a stable atmosphere within the chamber.

[0004] However, the device still has some shortcomings: it adjusts the gas pressure in the reaction chamber to ensure stable internal pressure, but the monitoring of the gas pressure inside the processing furnace is always static, which limits the monitoring of gas pressure at different heights inside the processing furnace. As a result, there is a certain degree of deviation when adjusting the gas pressure. At the same time, during the operation of the equipment, the staff can only rely on the program system to judge whether the equipment is operating normally. Also, when the inert gas is input, if it is affected by moisture, the purity of the inert gas can be reduced, thereby reducing the integrity of crystal growth. Summary of the Invention

[0005] To address the shortcomings of existing technologies, this invention provides an atmosphere maintenance device and process for sapphire single crystal growth furnaces, solving the problems mentioned in the background section.

[0006] To achieve the above objectives, the present invention provides the following technical solution: an atmosphere maintenance device for a sapphire single crystal growth furnace, comprising a processing furnace, a base at the bottom of the processing furnace, a drive mechanism inside the base, a gas control mechanism fixedly installed inside the gas inlet of the processing furnace, a support frame fixedly installed at the top of the output end of the drive mechanism, a crucible rotatably installed inside the support frame, several abutment plates equidistantly and fixedly installed on the outer wall of the support frame, two elastic telescopic hammers symmetrically and fixedly installed on the inner wall of the processing furnace, a rack fixedly installed on the bottom outer wall of the support frame, a gear rotatably installed at the bottom edge of the inner wall of the processing furnace, a reciprocating screw penetrating and fixedly installed inside the gear, a monitoring mechanism movably installed through the outer wall of the reciprocating screw, a prompting device around the monitoring mechanism to facilitate operators' awareness of the equipment's operating status, an anti-interference device above the prompting device to ensure the purity of the input gas, a suction mechanism fixedly installed on the outer wall of the processing furnace, a suction pipe penetrating and fixedly installed inside the suction mechanism, and an activated carbon plate slidably installed inside the suction pipe via a spring.

[0007] According to the above technical solution, the processing furnace has two equidistant air inlets inside. A power cabinet is arranged around the processing furnace to supply the power required for equipment operation. The output end of the drive mechanism moves through the interior of the processing furnace. The gas control mechanism contains argon or inert gas. The bottom of the support frame contacts the bottom of the inner wall of the processing furnace. The telescopic end of the elastic telescopic hammer contacts the side wall of the contact plate. The rack is circular, and the gear meshes with the rack. The outer wall of the reciprocating screw is a non-self-locking reciprocating spiral groove. The left arc surface of the activated carbon plate is located on the movement trajectory of the monitoring mechanism. The seed crystal is placed at the center of the bottom of the crucible's inner wall using laser positioning. Then, alumina required for crystal growth is added into the crucible. The processing furnace is then heated to heat the crucible, thus promoting crystal growth. Through the two gas control mechanisms, inert gas, such as argon, can be input into the processing furnace as needed to maintain stable crystal growth. Simultaneously, the drive mechanism is activated, and its output end drives the support frame to rotate. While the support frame rotates, the crucible inside remains stationary. Simultaneously, the support frame drives the contact plate to revolve. As the contact plate revolves, it releases its contact with the telescopic end of the elastic telescopic hammer. At this point, the telescopic end of the elastic telescopic hammer changes from a charged state to striking the outer wall of the support frame. This process repeats, generating a slight vibration in the alumina inside the crucible through the impact. The support frame also drives the rack to revolve. The rack's rotation causes the meshing gears to generate rotational force. This gear then drives the reciprocating screw to rotate. The rotation of the reciprocating screw, driven by the non-self-locking reciprocating spiral groove on its outer wall, causes the monitoring mechanism to move upwards and outwards along the inner wall of the processing furnace. The mechanism slides and resets repeatedly, thereby expanding the monitoring of gas pressure at different heights inside the processing furnace. When the monitoring mechanism moves upward, it contacts and abuts the arc surface of the activated carbon plate. The activated carbon plate slides horizontally inside the exhaust pipe due to the abutment force, and then resets by the spring force. This process is repeated. When the monitoring mechanism detects that the gas pressure inside the processing furnace is too high, the exhaust mechanism is activated and the gas inside the processing furnace is discharged through the exhaust pipe. At this time, the gas contacts the horizontally sliding activated carbon plate. When the pressure is too low, inert gas is introduced through the gas control mechanism.

[0008] According to the above technical solution, the prompting device includes a push plate, the outer wall of the push plate is fixedly installed on the side wall surface of the monitoring mechanism, and two telescopic spring plates are symmetrically and slidably installed inside the processing furnace by means of springs. The telescopic spring plates have limit wheels rotatably installed inside their telescopic ends, and a semi-arc plate is fixedly installed between the two telescopic spring plates on one side close to each other.

[0009] According to the above technical solution, the bottom of the telescopic spring plate contacts the top of the push plate, the outer wall of the limiting wheel contacts the outer wall of the crucible, the built-in spring of the telescopic spring plate has a strong elastic force, when the monitoring mechanism reciprocates vertically, it drives the push plate to move synchronously, when the push plate moves upward, it pushes the telescopic spring plate to slide upward along the inner wall of the processing furnace, and the telescopic spring plate drives the other end of the telescopic spring plate to move synchronously by relying on the semi-arc plate, the telescopic spring plate drives the limiting wheel to slide upward along the outer wall of the crucible, when the limiting wheel contacts the outer wall of the crucible, it generates friction and begins to rotate, thereby converting the sliding friction when the telescopic spring plate contacts the crucible into rolling friction, and the telescopic spring plate relies on the strong spring force to vertically limit the crucible.

[0010] According to the above technical solution, two L-shaped plates are symmetrically and fixedly installed at the bottom of the semi-arc plate. A trapezoidal frame is fixedly installed at the bottom of the L-shaped plate. A warning mechanism is slidably installed inside the bottom end of the processing furnace through a spring. A sealing ring is provided between the warning mechanism and the processing furnace. The end of the warning mechanism near the semi-arc plate contacts the inclined surface of the trapezoidal frame. When the semi-arc plate moves vertically back and forth, it drives the L-shaped plate to move synchronously. When the L-shaped plate rises, it drives the trapezoidal frame to move synchronously. The inclined surface of the trapezoidal frame contacts the arc surface of the warning mechanism and generates a resisting force. At this time, the trapezoidal frame causes the warning mechanism to extend outward. Then, it is reset by the spring force, and this process is repeated.

[0011] According to the above technical solution, the anti-interference device includes a transmission plate, the bottom of which is fixedly installed on the top of the L-shaped plate. A transmission rod is rotatably installed on the bottom of the inner wall of the processing furnace. A non-self-locking spiral groove is opened on the outer wall of the transmission rod. The outer wall of the spiral groove of the transmission rod is penetrated and movably installed inside the transmission plate. Several telescopic baffles are equidistantly and fixedly installed on the outer wall of the bottom end of the transmission rod. The telescopic baffles are elastically designed. When the L-shaped plate rises, it drives the transmission plate to move synchronously. When the transmission plate moves upward along the outer wall of the non-self-locking spiral groove of the transmission rod, the transmission rod is driven by the spiral groove to generate a rotational force. When the transmission rod rotates, it drives the telescopic baffles to revolve. When the telescopic baffles are blocked, they will retract and then be reset by the spring force. Thus, the gas and heat are effectively disturbed in a relatively small space.

[0012] According to the above technical solution, an L-shaped arc plate is fixedly installed on the side of the transmission plate near the inner wall of the processing furnace, an installation frame is fixedly installed inside the air inlet of the processing furnace, an elastic cotton block is provided on the outer wall of the installation frame, and a protrusion plate is slidably installed inside the sliding groove of the installation frame through a spring.

[0013] According to the above technical solution, a sliding groove is provided inside the mounting frame. The outer wall of the elastic cotton block contacts the inner wall of the air inlet of the processing furnace. The elastic cotton block is designed to be resistant to high temperatures. Both ends of the protrusion plate are fixedly installed on the side of the elastic cotton block near the mounting frame. The arc surface of the protrusion plate is located on the movement trajectory of the L-shaped arc plate. When the transmission plate drives the L-shaped arc plate to move upward, the L-shaped arc plate contacts and abuts the arc surface of the protrusion plate. The protrusion plate slides horizontally inside the sliding groove of the mounting frame by the abutting force. The protrusion plate pulls the elastic cotton block to contract and deform. Then, the protrusion plate pulls the elastic cotton block back to its original position by the spring force. This process is repeated, that is, the elastic cotton block blocks the air inlet of the processing furnace, so as to prevent water vapor from being generated at the air inlet due to the temperature difference between the inside and outside during the process of the gas control mechanism inputting gas into the processing furnace, thereby interfering with the inert gas.

[0014] A process for using an atmosphere maintenance device for a sapphire single crystal growth furnace includes the following steps: S1: The seed crystal is placed at the center of the bottom of the crucible using laser positioning. Then, alumina required for crystal growth is added into the crucible. The furnace is then heated to grow the crystal. Two gas control mechanisms can be used to input inert gases, such as argon, to the furnace to maintain stable crystal growth as needed. S2: Simultaneously, the drive mechanism starts, and the output end of the drive mechanism drives the bearing frame to revolve. When the bearing frame revolves, the crucible inside it remains stationary. At the same time, the bearing frame drives the contact plate to revolve. When the contact plate revolves, it releases the contact with the extension end of the elastic telescopic hammer. At this time, the extension end of the elastic telescopic hammer changes from the stored state to hitting the outer wall of the bearing frame. This process is repeated. S3: The load-bearing frame drives the rack to revolve. When the rack revolves, it causes the meshing gear to generate rotational force. At this time, the gear drives the reciprocating screw to rotate. When the reciprocating screw rotates, it is driven by the non-self-locking reciprocating spiral groove on its outer wall, which causes the monitoring mechanism to slide upward and outward along the inner wall of the processing furnace and reset. This process is repeated. S4: When the monitoring mechanism moves upward, it contacts and abuts the arc surface of the activated carbon plate. The activated carbon plate slides horizontally inside the exhaust pipe due to the abutment force, and then resets by the spring force. This process is repeated. When the monitoring mechanism detects that the gas pressure inside the processing furnace is too high, the exhaust mechanism is activated and the gas inside the processing furnace is discharged through the exhaust pipe. At this time, the gas contacts the horizontally sliding activated carbon plate. When the pressure is too low, inert gas is introduced through the gas control mechanism.

[0015] This invention provides an atmosphere maintenance device and process for a sapphire single crystal growth furnace. It has the following beneficial effects: (1) The present invention uses a support frame, crucible, contact plate, elastic telescopic hammer, rack, gear, reciprocating screw, monitoring mechanism, gas extraction mechanism, gas extraction pipe and activated carbon plate to cooperate. By rotating the crucible, the seed crystal placed in the center is effectively prevented from shifting due to synchronous revolution. At the same time, the vibration can create gaps between alumina, avoiding a large number of gaps in the crystal during growth, thus reducing the quality of the finished product. The reciprocating screw expands the monitoring range of the monitoring mechanism, which can obtain the gas pressure data at different heights inside the processing furnace in real time. This is different from the limitations of traditional fixed-point monitoring, making the monitoring data more accurate. At the same time, the gas control mechanism and the gas extraction mechanism can make fine adjustments during the atmosphere maintenance process inside the processing furnace, further optimizing the stability of crystal growth. Meanwhile, the activated carbon plate uniformly purifies the exhaust gas, reducing pollution to the external environment.

[0016] (2) The present invention uses a monitoring mechanism, a push plate, a telescopic spring plate, a limiting wheel, a semi-arc plate, an L-shaped plate, a trapezoidal frame and a warning mechanism to work together. The telescopic spring plate and the limiting wheel work together to reduce wear on the outer wall of the crucible. When the support frame rotates, it further ensures that the crucible is always vertically standing inside the support frame on the basis of the original rotation setting, so as to avoid the crystal and alumina from shifting or tilting, thereby reducing the crystal growth efficiency. The trapezoidal frame abuts to make the warning mechanism slide back and forth horizontally, so that the staff can know from the outside whether the internal structure of the processing furnace is operating normally. The mechanical structure prompts the staff to know in time whether the equipment operation has failed, simplifying the complexity of degree control and avoiding the need to gradually check the cause of the failure when a failure occurs, thus delaying the growth efficiency.

[0017] (3) The present invention uses an L-shaped plate, a transmission plate, a transmission rod, a telescopic baffle, an L-shaped arc plate, a mounting frame, an elastic cotton block, and a protrusion plate in combination. The telescopic baffle rotates to promote the rapid flow and uniform distribution of the gas entering the processing furnace and the heat generated during the heating process. This ensures that the internal heat and gas at different heights of the processing furnace are kept in a relatively constant state, thereby ensuring the uniform growth of the crystal. The elastic cotton block absorbs water vapor and its reciprocating expansion and contraction allows the water vapor to diffuse rapidly inside the elastic cotton block and dry it with the help of heat. This prevents water vapor from mixing into the inert gas and avoids the crystal from having bubbles or discoloration due to the decrease in the purity of the inert gas. On the original basis, this invention further ensures the integrity of crystal growth. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the entire invention; Figure 2 This is a schematic diagram of the main operating structure of the present invention; Figure 3 This is a cross-sectional schematic diagram of the main operating structure of the present invention; Figure 4This is a schematic diagram of the internal structure of the processing furnace of the present invention; Figure 5 This is a schematic diagram of the internal structure of the processing furnace of the present invention from the right side view; Figure 6 This is a schematic diagram showing the internal structure of the processing furnace of the present invention; Figure 7 This is a schematic diagram of the prompting device of the present invention; Figure 8 This is a schematic diagram of the prompting device of the present invention from the right side. Figure 9 This is a schematic diagram of the anti-interference device of the present invention; Figure 10 This is a cross-sectional schematic diagram of the anti-interference device of the present invention. Figure 11 For the present invention Figure 10 Enlarged schematic diagram of the structure at point A in the middle.

[0019] In the diagram: 1. Processing furnace; 2. Base; 3. Power cabinet; 4. Drive mechanism; 5. Pneumatic control mechanism; 6. Bearing frame; 7. Crucible; 8. Contact plate; 9. Elastic telescopic hammer; 10. Rack; 11. Gear; 12. Reciprocating screw; 13. Monitoring mechanism; 14. Air extraction mechanism; 15. Air extraction pipe; 16. Activated carbon plate; 17. Indication device; 171. Push plate; 172. Telescopic spring plate; 173. Limiting wheel; 174. Semi-arc plate; 175. L-shaped plate; 176. Trapezoidal frame; 177. Warning mechanism; 18. Anti-interference device; 181. Transmission plate; 182. Transmission rod; 183. Telescopic spoiler; 184. L-shaped arc plate; 185. Mounting frame; 186. Elastic cotton block; 187. Protrusion plate. Detailed Implementation

[0020] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0021] Please see Figures 1-11One embodiment of the present invention is: an atmosphere maintenance device for a sapphire single crystal growth furnace, comprising a processing furnace 1, a base 2 at the bottom of the processing furnace 1, a drive mechanism 4 inside the base 2, a gas control mechanism 5 fixedly installed inside the gas inlet of the processing furnace 1, a support frame 6 fixedly installed at the top of the output end of the drive mechanism 4, a crucible 7 rotatably installed inside the support frame 6, a plurality of abutment plates 8 equidistantly and fixedly installed on the outer wall of the support frame 6, two elastic telescopic hammers 9 symmetrically and fixedly installed on the inner wall of the processing furnace 1, and a rack 10 fixedly installed on the bottom outer wall of the support frame 6. A gear 11 is rotatably installed at the bottom edge of the wall. A reciprocating screw 12 is fixedly installed inside the gear 11. A monitoring mechanism 13 is movably installed through the outer wall of the reciprocating screw 12. A prompting device 17 is set around the monitoring mechanism 13 to facilitate the staff to know the operating status of the equipment. An anti-interference device 18 is set above the prompting device 17 to ensure the purity of the input gas. An exhaust mechanism 14 is fixedly installed on the outer wall of the processing furnace 1. An exhaust pipe 15 is fixedly installed inside the exhaust mechanism 14. An activated carbon plate 16 is slidably installed inside the exhaust pipe 15 by a spring.

[0022] The processing furnace 1 has two air inlets equidistantly spaced inside. A power cabinet 3 is installed around the processing furnace 1 to supply the power required for equipment operation. The output end of the drive mechanism 4 moves through the interior of the processing furnace 1. The pneumatic control mechanism 5 contains argon or inert gas. The bottom of the bearing frame 6 contacts the bottom of the inner wall of the processing furnace 1. The telescopic end of the elastic telescopic hammer 9 contacts the side wall of the contact plate 8. The rack 10 has a circular design. The gear 11 meshes with the rack 10. The outer wall of the reciprocating screw 12 has a non-self-locking reciprocating spiral groove. The left end arc surface of the activated carbon plate 16 is located on the movement trajectory of the monitoring mechanism 13.

[0023] By rotating the crucible 7, the seed crystal placed at the center is effectively prevented from shifting due to synchronous revolution. At the same time, the vibration creates gaps between the alumina particles, preventing a large number of gaps from forming during crystal growth and thus reducing the quality of the finished product. The reciprocating screw 12 expands the monitoring range of the monitoring mechanism 13, enabling real-time monitoring of the gas pressure data at different heights inside the processing furnace 1. This overcomes the limitations of traditional fixed-point monitoring, making the monitoring data more accurate. In conjunction with the gas control mechanism 5 and the gas extraction mechanism 14, the atmosphere inside the processing furnace 1 is finely adjusted during maintenance, further optimizing the stability of crystal growth. Meanwhile, the activated carbon plate 16 uniformly purifies the exhaust gas, reducing pollution to the external environment.

[0024] In use, the seed crystal is placed at the center of the bottom of the inner wall of the crucible 7 using laser positioning. Then, alumina required for crystal growth is added into the crucible 7. The furnace 1 is then heated to heat the crucible 7, thus promoting crystal growth. Two gas control mechanisms 5 can supply inert gases, such as argon, to the furnace 1 to maintain stable crystal growth. Simultaneously, the drive mechanism 4 is activated, and its output drives the carrier frame 6 to rotate. While the carrier frame 6 rotates, the crucible 7 inside remains stationary. The carrier frame 6 also drives the contact plate 8 to rotate. As the contact plate 8 rotates, it releases its contact with the telescopic end of the elastic telescopic hammer 9, causing the telescopic end of the elastic telescopic hammer 9 to change from a charged state to striking the outer wall of the carrier frame 6. This process repeats, generating a slight vibration in the alumina inside the crucible 7 through the impact. The carrier frame 6 drives the rack 10 to rotate. During revolution, the meshing gear 11 generates rotational force, which drives the reciprocating screw 12 to rotate. When the reciprocating screw 12 rotates, it is driven by the non-self-locking reciprocating spiral groove on its outer wall, which causes the monitoring mechanism 13 to slide upward and outward along the inner wall of the processing furnace 1 and reset. This process is repeated, thereby expanding the monitoring work of the monitoring mechanism 13 on the gas pressure at different heights inside the processing furnace 1. When the monitoring mechanism 13 moves upward, it contacts and abuts the arc surface of the activated carbon plate 16. The activated carbon plate 16 slides horizontally inside the exhaust pipe 15 due to the abutment force, and then resets by the spring force. This process is repeated. When the monitoring mechanism 13 detects that the gas pressure inside the processing furnace 1 is too high, the exhaust mechanism 14 is activated and the gas inside the processing furnace 1 is discharged through the exhaust pipe 15. At this time, the gas contacts the horizontally sliding activated carbon plate 16. When the pressure is too low, inert gas is introduced through the gas control mechanism 5.

[0025] According to the above embodiments, by rotating the crucible 7, the seed crystal placed in the center is effectively prevented from shifting due to synchronous revolution. At the same time, the vibration can create gaps between the alumina, avoiding a large number of gaps in the crystal during growth and thus reducing the quality of the finished product. The reciprocating screw 12 expands the monitoring range of the monitoring mechanism 13, enabling real-time acquisition of gas pressure data at different heights inside the processing furnace 1. This overcomes the limitations of traditional fixed-point monitoring, making the monitoring data more accurate. In conjunction with the gas control mechanism 5 and the gas extraction mechanism 14, the atmosphere inside the processing furnace 1 is finely adjusted during maintenance, further optimizing the stability of crystal growth. Meanwhile, the activated carbon plate 16 uniformly purifies the exhaust gas, reducing pollution to the external environment.

[0026] The prompting device 17 includes a push plate 171. The outer wall of the push plate 171 is fixedly installed on the side wall surface of the monitoring mechanism 13. Two telescopic spring plates 172 are symmetrically and slidably installed inside the processing furnace 1 by means of springs. Limiting wheels 173 are rotatably installed inside the telescopic ends of the telescopic spring plates 172. A semi-arc plate 174 is fixedly installed between the two telescopic spring plates 172 on one side close to each other.

[0027] The bottom of the telescopic spring plate 172 contacts the top of the push plate 171, the outer wall of the limiting wheel 173 contacts the outer wall of the crucible 7, and the built-in spring of the telescopic spring plate 172 has a strong elastic force.

[0028] Two L-shaped plates 175 are symmetrically and fixedly installed at the bottom of the semi-arc plate 174. A trapezoidal frame 176 is fixedly installed at the bottom of the L-shaped plate 175. A warning mechanism 177 is slidably installed inside the bottom of the processing furnace 1 through a spring. A sealing ring is provided between the warning mechanism 177 and the processing furnace 1. The end of the warning mechanism 177 near the semi-arc plate 174 contacts the inclined surface of the trapezoidal frame 176.

[0029] By cooperating with the telescopic spring plate 172 and the limiting wheel 173, wear on the outer wall of the crucible 7 is reduced. When the support frame 6 rotates, the crucible 7 is further ensured to always be perpendicular to the inside of the support frame 6, on the basis of the original rotation setting, so as to avoid the crystal and alumina from shifting or tilting, thereby reducing the crystal growth efficiency. The abutment of the trapezoidal frame 176 causes the warning mechanism 177 to slide back and forth horizontally, so that the staff can know from the outside whether the internal structure of the processing furnace 1 is operating normally. The mechanical structure prompts the staff to know in time whether the equipment operation has malfunctioned, simplifying the complexity of degree control and avoiding the need to step by step to find the cause of the fault when it occurs, thus delaying the growth efficiency.

[0030] Please see Figures 1-11 Based on the above embodiments, another embodiment of the present invention further includes a prompting device 17; In use, when the monitoring mechanism 13 reciprocates vertically, it drives the push plate 171 to move synchronously. When the push plate 171 moves upward, it pushes the telescopic spring plate 172 to slide upward along the inner wall of the processing furnace 1. The telescopic spring plate 172, relying on the semi-arc plate 174, drives the other end of the telescopic spring plate 172 to move synchronously. The telescopic spring plate 172 drives the limiting wheel 173 to slide upward along the outer wall of the crucible 7. When the limiting wheel 173 contacts the outer wall of the crucible 7, it generates friction and begins to rotate, thereby connecting the telescopic spring plate 172 with the crucible. The sliding friction when the crucible 7 is in contact is converted into rolling friction, and the telescopic spring plate 172 relies on the strong spring force to vertically limit the crucible 7; when the semi-arc plate 174 moves vertically back and forth, it drives the L-shaped plate 175 to move synchronously. When the L-shaped plate 175 rises, it drives the trapezoidal frame 176 to move synchronously. The inclined surface of the trapezoidal frame 176 contacts the arc surface of the warning mechanism 177 and generates a resisting force. At this time, the trapezoidal frame 176 causes the warning mechanism 177 to extend outward, and then resets through the spring force, repeating this process.

[0031] According to the above embodiments, by cooperating with the telescopic spring plate 172 and the limiting wheel 173, the wear on the outer wall of the crucible 7 is reduced. When the support frame 6 rotates, the crucible 7 is further ensured to always be perpendicular to the inside of the support frame 6 on the basis of the original rotation setting, so as to avoid the crystal and alumina from shifting or tilting, thereby reducing the crystal growth efficiency. The abutment of the trapezoidal frame 176 causes the warning mechanism 177 to slide back and forth horizontally, so that the staff can know from the outside whether the internal structure of the processing furnace 1 is operating normally. The mechanical structure prompts the staff to know in time whether the equipment operation has malfunctioned, simplifying the complexity of degree control and avoiding the need to step by step to find the cause of the fault when a fault occurs, thus delaying the growth efficiency.

[0032] Please see Figures 1-11 Based on the above embodiments, another embodiment of the present invention further includes an anti-interference device 18; The anti-interference device 18 includes a transmission plate 181. The bottom of the transmission plate 181 is fixedly installed on the top of the L-shaped plate 175. A transmission rod 182 is rotatably installed on the bottom of the inner wall of the processing furnace 1. The outer wall of the transmission rod 182 is provided with a non-self-locking spiral groove. The outer wall of the spiral groove of the transmission rod 182 passes through and is movably installed inside the transmission plate 181. Several telescopic spoilers 183 are equidistantly and fixedly installed on the outer wall of the bottom end of the transmission rod 182. The telescopic spoilers 183 are elastically designed.

[0033] An L-shaped arc plate 184 is fixedly installed on the side of the transmission plate 181 near the inner wall of the processing furnace 1. An installation frame 185 is fixedly installed inside the air inlet of the processing furnace 1. An elastic cotton block 186 is provided on the outer wall of the installation frame 185. A protrusion plate 187 is slidably installed inside the slide groove of the installation frame 185 through a spring.

[0034] The mounting frame 185 has a sliding groove inside. The outer wall of the elastic cotton block 186 contacts the inner wall of the air inlet of the processing furnace 1. The elastic cotton block 186 is designed to withstand high temperatures. Both ends of the protrusion plate 187 are fixedly installed on the side of the elastic cotton block 186 near the mounting frame 185. The arc surface of the protrusion plate 187 is located on the movement trajectory of the L-shaped arc plate 184.

[0035] By rotating the telescopic baffle 183, the gas entering the processing furnace 1 and the heat generated during the heating process can be rapidly circulated and evenly distributed, ensuring that the heat and gas inside the processing furnace 1 at different heights are maintained at a relatively constant state, thereby ensuring uniform crystal growth. The elastic cotton block 186 absorbs water vapor, and its reciprocating expansion and contraction allow the water vapor to diffuse rapidly inside the elastic cotton block 186, thereby drying it with the help of heat. This prevents water vapor from mixing into the inert gas, avoiding the appearance of bubbles or discoloration in the crystal due to the decrease in the purity of the inert gas, and further ensuring the integrity of crystal growth on the original basis.

[0036] In use, when the L-shaped plate 175 rises, it drives the transmission plate 181 to move synchronously. When the transmission plate 181 moves upward along the outer wall of the non-self-locking spiral groove of the transmission rod 182, the spiral groove drives the transmission rod 182 to generate a rotational force. When the transmission rod 182 rotates, it drives the telescopic spoiler 183 to revolve. When the telescopic spoiler 183 is obstructed, it will retract and then be reset by the spring force. This effectively disturbs the gas and heat in a relatively small space. The transmission plate 181 drives the L-shaped arc plate 184 to move upward. When in motion, the L-shaped arc plate 184 contacts and abuts against the arc surface of the protrusion plate 187. The protrusion plate 187 slides horizontally inside the sliding groove of the mounting frame 185 by the abutting force. The protrusion plate 187 pulls the elastic cotton block 186 to contract and deform. Then, the protrusion plate 187 relies on the spring force to pull the elastic cotton block 186 back to its original position. This process is repeated, that is, the elastic cotton block 186 blocks the air inlet of the processing furnace 1, so as to prevent water vapor from being generated at the air inlet due to the temperature difference between the inside and outside during the process of the gas control mechanism 5 inputting gas into the processing furnace 1, thereby interfering with the inert gas.

[0037] According to the above embodiment, the revolving telescopic baffle 183 promotes the rapid flow and uniform distribution of gas entering the processing furnace 1 and the heat generated during the heating process, ensuring that the internal heat and gas at different heights of the processing furnace 1 remain in a relatively constant state, thereby ensuring uniform crystal growth. The elastic cotton block 186 absorbs water vapor, and its reciprocating expansion and contraction allow water vapor to diffuse rapidly inside the elastic cotton block 186, thereby drying it with the help of heat. This prevents water vapor from mixing into the inert gas, avoiding the appearance of bubbles or discoloration in the crystal due to the decrease in the purity of the inert gas, and further ensuring the integrity of crystal growth on the original basis.

[0038] A process for using an atmosphere maintenance device for a sapphire single crystal growth furnace includes the following steps: S1: The seed crystal is placed at the center of the bottom of the inner wall of the crucible 7 by laser positioning. Then, the alumina required for crystal growth is put into the crucible 7. The furnace 1 is heated and the crucible 7 is heated to grow the crystal. Through two gas control mechanisms 5, an inert gas, such as argon, can be introduced into the furnace 1 as needed to maintain the stable growth of the crystal. S2: Simultaneously, the drive mechanism 4 starts, and the output end of the drive mechanism 4 drives the bearing frame 6 to revolve. When the bearing frame 6 revolves, the crucible 7 inside it remains stationary. At the same time, the bearing frame 6 drives the contact plate 8 to revolve. When the contact plate 8 revolves, it releases the contact with the extension end of the elastic telescopic hammer 9. At this time, the extension end of the elastic telescopic hammer 9 changes from the stored state to hitting the outer wall of the bearing frame 6, and so on. S3: The bearing frame 6 drives the rack 10 to revolve. When the rack 10 revolves, it causes the meshing gear 11 to generate a rotational force. At this time, the gear 11 drives the reciprocating screw 12 to rotate. When the reciprocating screw 12 rotates, it is driven by the non-self-locking reciprocating spiral groove on its outer wall, which causes the monitoring mechanism 13 to slide upward and outward along the inner wall of the processing furnace 1 and reset. This process is repeated. S4: When the monitoring mechanism 13 moves upward, it contacts and abuts the arc surface of the activated carbon plate 16. The activated carbon plate 16 slides horizontally inside the exhaust pipe 15 due to the abutment force, and then resets by the spring force. This process is repeated. When the monitoring mechanism 13 detects that the gas pressure inside the processing furnace 1 is too high, the exhaust mechanism 14 is activated and the gas inside the processing furnace 1 is discharged through the exhaust pipe 15. At this time, the gas contacts the horizontally sliding activated carbon plate 16. When the pressure is too low, inert gas is introduced through the gas control mechanism 5.

[0039] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. An atmosphere maintenance device for a sapphire single crystal growth furnace, comprising a processing furnace (1), characterized in that: The processing furnace (1) is provided with a base (2) at the bottom, and a drive mechanism (4) is provided inside the base (2). A gas control mechanism (5) is fixedly installed inside the air inlet of the processing furnace (1). A bearing frame (6) is fixedly installed at the top of the output end of the drive mechanism (4). A crucible (7) is rotatably installed inside the bearing frame (6). Several abutment plates (8) are fixedly installed at equal intervals on the outer wall of the bearing frame (6). Two elastic telescopic hammers (9) are symmetrically installed on the inner wall of the processing furnace (1). A rack (10) is fixedly installed on the bottom outer wall of the bearing frame (6). A gear is rotatably installed at the bottom edge of the inner wall of the processing furnace (1). 11) A reciprocating screw (12) is fixedly installed inside the gear (11). A monitoring mechanism (13) is installed movably through the outer wall of the reciprocating screw (12). A prompting device (17) is provided around the monitoring mechanism (13) to facilitate the staff to know the operating status of the equipment. An anti-interference device (18) is provided above the prompting device (17) to ensure the purity of the input gas. A gas extraction mechanism (14) is fixedly installed on the outer wall of the processing furnace (1). A gas extraction pipe (15) is fixedly installed inside the gas extraction mechanism (14). An activated carbon plate (16) is slidably installed inside the gas extraction pipe (15) by a spring.

2. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 1, characterized in that: The processing furnace (1) has two air inlets equidistantly arranged inside. A power cabinet (3) is provided around the processing furnace (1) and is used to supply the power required for the operation of the equipment. The output end of the drive mechanism (4) moves through the interior of the processing furnace (1). The gas control mechanism (5) is filled with argon or inert gas. The bottom of the bearing frame (6) is in contact with the bottom of the inner wall of the processing furnace (1). The telescopic end of the elastic telescopic hammer (9) is in contact with the side wall of the contact plate (8). The rack (10) is circular. The gear (11) meshes with the rack (10). The outer wall of the reciprocating screw (12) is a non-self-locking reciprocating spiral groove. The left end arc surface of the activated carbon plate (16) is located on the movement trajectory of the monitoring mechanism (13).

3. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 2, characterized in that: The prompting device (17) includes a push plate (171). The outer wall of the push plate (171) is fixedly installed on the side wall surface of the monitoring mechanism (13). Two telescopic spring plates (172) are symmetrically and slidably installed inside the processing furnace (1) by means of springs. A limit wheel (173) is rotatably installed inside the telescopic end of the telescopic spring plate (172). A semi-arc plate (174) is fixedly installed between the two telescopic spring plates (172) on one side close to each other.

4. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 3, characterized in that: The bottom of the telescopic spring plate (172) contacts the top of the push plate (171), the outer wall of the limiting wheel (173) contacts the outer wall of the crucible (7), and the built-in spring of the telescopic spring plate (172) has a strong elastic force.

5. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 4, characterized in that: The bottom of the semi-arc plate (174) is symmetrically and fixedly installed with two L-shaped plates (175). The bottom of the L-shaped plate (175) is fixedly installed with a trapezoidal frame (176). The bottom of the processing furnace (1) is slidably installed with a warning mechanism (177) through a spring. A sealing ring is provided between the warning mechanism (177) and the processing furnace (1). The end of the warning mechanism (177) near the semi-arc plate (174) is in contact with the inclined surface of the trapezoidal frame (176).

6. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 5, characterized in that: The anti-interference device (18) includes a transmission plate (181), the bottom of which is fixedly installed on the top of the L-shaped plate (175). A transmission rod (182) is rotatably installed on the bottom of the inner wall of the processing furnace (1). A non-self-locking spiral groove is opened on the outer wall of the transmission rod (182). The outer wall of the spiral groove of the transmission rod (182) is penetrated and movably installed inside the transmission plate (181). Several telescopic baffles (183) are equidistantly and fixedly installed on the outer wall of the bottom end of the transmission rod (182). The telescopic baffles (183) are elastically designed.

7. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 6, characterized in that: An L-shaped arc plate (184) is fixedly installed on the side of the transmission plate (181) near the inner wall of the processing furnace (1). An installation frame (185) is fixedly installed inside the air inlet of the processing furnace (1). An elastic cotton block (186) is provided on the outer wall of the installation frame (185). A protrusion plate (187) is slidably installed inside the groove of the installation frame (185) through a spring.

8. The atmosphere maintenance device for a sapphire single crystal growth furnace according to claim 7, characterized in that: The mounting frame (185) has a sliding groove inside. The outer wall of the elastic cotton block (186) is in contact with the inner wall of the air inlet of the processing furnace (1). The elastic cotton block (186) is designed to withstand high temperatures. Both ends of the protrusion plate (187) are fixedly installed on the side of the elastic cotton block (186) near the mounting frame (185). The arc surface of the protrusion plate (187) is located on the movement trajectory of the L-shaped arc plate (184).

9. A process for using an atmosphere maintenance device for a sapphire single crystal growth furnace, employing the atmosphere maintenance device for a sapphire single crystal growth furnace as described in claim 8, characterized in that... Includes the following steps: S1: The seed crystal is placed at the center of the bottom of the inner wall of the crucible (7) by laser positioning. Then, the alumina required for crystal growth is put into the crucible (7). Then, the furnace (1) is heated and the crucible (7) is heated to grow the crystal. Through two gas control mechanisms (5), an inert gas, such as argon, can be introduced into the furnace (1) as needed to maintain the stable growth of the crystal. S2: Simultaneously, the drive mechanism (4) starts, and the output end of the drive mechanism (4) drives the bearing frame (6) to revolve. When the bearing frame (6) revolves, the crucible (7) inside it remains stationary. At the same time, the bearing frame (6) drives the contact plate (8) to revolve. When the contact plate (8) revolves, it releases the contact with the telescopic end of the elastic telescopic hammer (9). At this time, the telescopic end of the elastic telescopic hammer (9) changes from the stored state to hitting the outer wall of the bearing frame (6), and so on. S3: The load-bearing frame (6) drives the rack (10) to revolve. When the rack (10) revolves, it causes the meshing gear (11) to generate rotational force. At this time, the gear (11) drives the reciprocating screw (12) to rotate. When the reciprocating screw (12) rotates, it is driven by the non-self-locking reciprocating spiral groove on its outer wall, which causes the monitoring mechanism (13) to slide upward and outward along the inner wall of the processing furnace (1) and reset. This process is repeated. S4: When the monitoring mechanism (13) moves upward, it contacts and abuts the arc surface of the activated carbon plate (16). The activated carbon plate (16) slides horizontally inside the exhaust pipe (15) by resisting force. Then it is reset by spring force. This process is repeated. When the monitoring mechanism (13) detects that the gas pressure inside the processing furnace (1) is too high, the exhaust mechanism (14) is started and the gas inside the processing furnace (1) is discharged through the exhaust pipe (15). At this time, the gas contacts the horizontally sliding activated carbon plate (16). When the pressure is too low, inert gas is input through the gas control mechanism (5).

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