Ku-band four-channel dual-polarization TR assembly based on SIP (Session Initiation Protocol) technology

Abstract

The invention discloses a Ku-band four-channel dual-polarization TR assembly based on the SIP technology, which is applied to the technical field of active phased array radars, and is characterized in that the SIP technology is applied to a multi-channel TR front-end module, and the design of a power division network and a crossed strip line network is applied to an integrated microwave thin film multilayer circuit substrate, so that the multi-channel TR front-end module can be realized; various integrated microwave chips such as an amplitude-phase multifunctional wave control chip S1, a power amplifier switch chip S2, an amplitude-limiting low-noise amplifier chip S3 and the like are matched on the surface to form a radio frequency transceiving link, so that the aims of minimizing the link and maximizing the function are fulfilled; 8 shielding areas are divided, signal leakage between channels can be effectively prevented, and it is guaranteed that all levels work in a stable environment; the TR assembly is provided with four receiving and transmitting channels and four receiving channels at the same time, meets the requirements of miniaturization, light weight, integration, multiple functions, multiple channels and dual polarization, achieves the electrical indexes of the TR assembly, and also has the functions of reliability and maintainability.

Description

Technical Field

[0001] This invention belongs to the field of active phased array radar technology, and specifically relates to a Ku-band four-channel dual-polarized TR component based on SIP technology. Background Technology

[0002] Radar has gone through different historical periods, and its application theories, operating systems, and usage methods have developed rapidly. As a core component of an active phased array radar system, the TR module's size, weight, performance, cost, and reliability directly affect the radar's overall performance.

[0003] The TR component is located at the radio frequency front end of the active subarray of the phased array radar. It mainly includes two channels: transmit and receive. It completes the final stage power amplification of the transmitted signal to the array element and the pre-stage amplification of the received signal, realizing functions such as amplitude and phase correction and beam scanning of the array surface.

[0004] TR components vary depending on system performance requirements, and the specific circuit design also varies greatly. However, they generally consist of a phase shifter, an RF TR switch, a power amplifier, a limiter, a low-noise amplifier, a circulator, and a control circuit, which can realize rapid switching between transmit and receive states.

[0005] With the continuous iterative development of modern new technologies, new materials, and new processes, military communication equipment has increasingly stringent requirements for hardware microwave modules, necessitating the development of TR components towards localization, miniaturization, lightweighting, wideband, multi-functionality, multi-channel, and multi-polarization.

[0006] To meet the integration requirements of TR modules, this invention designs a Ku-band four-channel dual-polarized TR component using SIP technology. Summary of the Invention

[0007] The purpose of this invention is to provide a Ku-band four-channel dual-polarized TR component using SIP technology. Its advantages are that it can meet the requirements of miniaturization, lightweight, integration, multi-functionality, multi-channel, and dual-polarization while achieving the electrical performance of the TR component, and at the same time taking into account the functions of reliability and maintainability.

[0008] The above-mentioned technical objective of the present invention is achieved through the following technical solution: a Ku-band four-channel dual-polarized TR component using SIP technology, comprising a back cover, a back housing, a microwave thin-film multilayer circuit board, a front housing, a front frame, and a front cover. The front frame penetrates the interior of the front housing and is bonded to one side of the microwave thin-film multilayer circuit board. The back housing and the front housing are installed together to encapsulate and fix the microwave thin-film multilayer circuit board between them. A back cover is installed on the side of the back housing away from the front housing, and a front cover is installed on the side of the front housing away from the back housing to encapsulate and fix the front frame. The front frame bonded to one side of the microwave thin-film multilayer circuit board divides the front and back of the microwave thin-film multilayer circuit board into eight shielding areas.

[0009] By employing the above technical solution, SIP technology is applied to the multi-channel TR front-end module. A power divider network and cross-strip line network design are used in the integrated microwave thin-film multilayer circuit board. Various integrated microwave chips, such as the amplitude and phase multi-functional wave controller chip S1, power amplifier switch chip S2, and limiting low-noise amplifier chip S3, are integrated on the surface to form an RF transceiver link, achieving the goal of minimizing the link and maximizing functionality. Furthermore, eight shielded areas are defined to effectively prevent signal leakage between channels and ensure that each stage operates in a stable environment. Simultaneously, it has four transceiver channels and four receive channels, meeting the requirements of miniaturization, lightweight design, integration, multi-functionality, multi-channel operation, and dual polarization. This achieves the electrical specifications of the TR component while also considering reliability and maintainability.

[0010] The present invention is further configured such that the eight shielding regions include regions A1, A2, B1, B2, B3, and B4 disposed on the front side of the microwave thin-film multilayer circuit substrate, and regions A3 and A4 disposed on the back side of the microwave thin-film multilayer circuit substrate.

[0011] By adopting the above technical solution, eight shielded zones are defined, which can effectively prevent signal leakage between channels and ensure that all levels of work are carried out in a stable environment.

[0012] The present invention is further configured such that: the A1 region, A2 region, A3 region, and A4 region are all equipped with an S1 amplitude and phase multi-functional wave control chip.

[0013] Using the above technical solution, an amplitude and phase multi-functional wave control chip S1 is installed inside each of the four shielded areas.

[0014] The present invention is further configured such that: the ports of the S2 power amplifier switch chip, the S3 limiting low noise amplifier chip, and the S4 limiting low noise amplifier chip are installed in the B1 region, the B2 region, the B3 region, and the B4 region.

[0015] Using the above technical solution, each of the four shielded areas is equipped with an S2 power amplifier switch chip, an S3 limiting low-noise amplifier chip, and an S4 limiting low-noise amplifier chip port. At the same time, it can form four receiving channels and four receiving channels together with various integrated microwave chips such as the S1 amplitude and phase multi-functional wave control chip.

[0016] The present invention is further configured such that: the back cover plate, the back shell, the front shell, the front frame, and the front cover plate are all made of aluminum-silicon material; the interior of the back shell and the front shell are both gold-plated; and the back cover plate, the back shell, the front shell, the front frame, and the front cover plate are all uniformly nickel-plated.

[0017] The above technical solution has the advantages of being lightweight, having good thermal conductivity, high hardness and corrosion resistance, while also providing anti-oxidation, anti-corrosion, and strong solder wettability.

[0018] The present invention is further configured such that: the microwave thin-film multilayer circuit board is stacked with ten layers, the substrate material is GNC3008, the prepreg is GNC300BP, the microwave link inside the microwave thin-film multilayer circuit board adopts coplanar waveguide transmission line, coaxial transmission line, strip power divider network, and parallel strip lines combined to transmit signals, the vias of the microwave thin-film multilayer circuit board are filled with resin, and the surface plating is nickel-palladium-gold.

[0019] The above technical solution is not easily deformed and has the advantages of low radio frequency loss, low dielectric constant, low coefficient of thermal expansion, and stable electrical performance.

[0020] The present invention is further configured such that: in terms of the processing of the microwave thin film multilayer circuit substrate, two laminations are used, lamination of 1-6 layers and 7-10 layers, and a total of 5 GNC3008 boards and 4 GNC300BP boards are used for lamination.

[0021] By adopting the above technical solution, the layout space is effectively compressed, and the surface flatness and solder penetration rate are improved.

[0022] The present invention is further configured such that the RC elements of the S1 amplitude and phase multi-functional wave control chip, the S2 power amplifier switch chip, and the S3 limiting low noise amplifier chip are all distributed on the surface and bottom layers of the microwave hybrid circuit board, and the S2 power amplifier switch chip adopts a low temperature eutectic process.

[0023] By adopting the above technical solution and through reasonable allocation, the integration of components is improved, which facilitates maintenance and repair while ensuring high heat dissipation.

[0024] The present invention is further configured such that: the bonding between the front frame and the back shell is performed using a micro-assembly process; the gap between the front frame and the surface layer of the microwave thin film multilayer circuit board is sealed with conductive adhesive; and the gap between the front frame and the microwave thin film multilayer circuit board is sealed using a laser hermetic sealing process.

[0025] By adopting the above technical solution, signal leakage within the cavity space is effectively shielded, and the airtightness meets military standards (leakage rate of 10-9 Pa·m3 / s), ensuring the long-term reliability of the SIP component.

[0026] In summary, the present invention has the following beneficial effects:

[0027] 1. This invention applies SIP technology to a multi-channel TR front-end module. It utilizes a power divider network and a cross stripline network design in an integrated microwave thin-film multilayer circuit substrate. Various integrated microwave chips, such as amplitude and phase multi-functional wave control chip S1, power amplifier switch chip S2, and limiting low-noise amplifier chip S3, are combined on the surface to form an RF transceiver link, achieving the goal of minimizing the link and maximizing the function.

[0028] 2. This invention achieves module miniaturization by employing a double-sided cavity discrete shell structure, compressing layout space, and reducing the size of the SIP component. By bonding the microwave thin-film multilayer circuit board and the front frame together, eight shielding areas are defined, effectively preventing signal leakage between channels and ensuring stable operation at each stage.

[0029] 3. This invention ensures the reliability and maintainability of SIP components through integrated assembly and soldering, gas cleaning, chip brazing, power amplifier low-temperature eutectic bonding, plasma cleaning, gold wire bonding, solder penetration quality inspection, gas tightness sealing, and gas tightness quality inspection.

[0030] 4. This invention utilizes the ports of four sets of amplitude and phase multi-functional wave control chips S1, power amplifier switch chip S2, and limiting low noise amplifier chips S3 and S4 within eight shielded areas to work together, enabling the SIP transceiver component to form a system with four transmit and receive channels and four receive channels. This meets the requirements of miniaturization, lightweighting, integration, multi-functionality, multi-channel, and dual polarization, achieving the electrical specifications of the TR component while also ensuring reliability and maintainability. Attached Figure Description

[0031] Figure 1 This is an exploded view of the SIP component structure of the present invention;

[0032] Figure 2 This is a schematic diagram of the front and back three-dimensional structure of the microwave thin-film multilayer circuit substrate of the present invention;

[0033] Figure 3This is a schematic diagram of the front structure of the microwave thin-film multilayer circuit substrate of the present invention;

[0034] Figure 4 This is a schematic diagram of the reverse side structure of the microwave thin-film multilayer circuit substrate of the present invention;

[0035] Figure 5 This is a schematic diagram of the workflow of the SIP component of the present invention;

[0036] Figure 6 This is a diagram of the electrical parameters of the SIP component of the present invention;

[0037] Figure 7 This is the gain / power distribution diagram of the SIP component of this invention;

[0038] Figure 8 This is a schematic diagram of the stacked layers of the microwave thin-film multilayer circuit substrate of the present invention;

[0039] Figure 9 This is a cross-sectional view of the microwave thin-film multilayer circuit substrate of the present invention;

[0040] Figure 10 This is a simulation model diagram of the SIP component of this invention using HFSS.

[0041] Figure 11 This is a schematic diagram of the HFSS three-dimensional structure of the SIP component of the present invention;

[0042] Figure 12 This is a diagram of the HFSS simulation parameters of the SIP component of this invention.

[0043] Reference numerals: 1. Back cover plate; 2. Back housing; 3. Microwave thin-film multilayer circuit board; 4. Front housing; 5. Front frame; 6. Front cover plate. Detailed Implementation

[0044] The present invention will be further described in detail below with reference to the accompanying drawings.

[0045] Example 1:

[0046] refer to Figure 1 , Figure 2 , Figure 3 , Figure 4A Ku-band four-channel dual-polarized TR component using SIP technology includes a back cover 1, a back housing 2, a microwave thin-film multilayer circuit board 3, a front housing 4, a front frame 5, and a front cover 6. The front frame 5 penetrates the interior of the front housing 4 and is bonded to one side of the microwave thin-film multilayer circuit board 3. The back housing 2 and the front housing 4 are mounted together to encapsulate and fix the microwave thin-film multilayer circuit board 3 between them. The back cover 1 is mounted on the side of the back housing 2 away from the front housing 4, and the front cover 6, which encapsulates and fixes the front frame 5, is mounted on the side of the front housing 4 away from the back housing 2. The front frame 5, bonded to one side of the microwave thin-film multilayer circuit board 3, divides the front and back of the microwave thin-film multilayer circuit board 3 into eight shielding areas. IP technology is applied to the multi-channel TR front-end module. A power divider network and cross-strip line network design are used in the integrated microwave thin-film multilayer circuit board. Various integrated microwave chips, such as the amplitude and phase multi-functional wave controller chip S1, power amplifier switch chip S2, and limiting low-noise amplifier chip S3, are integrated on the surface to form the RF transceiver link, achieving the goal of minimizing the link and maximizing functionality. Furthermore, eight shielded areas are defined to effectively prevent signal leakage between channels and ensure that each stage operates in a stable environment. It also features four transceiver channels and four receive channels, meeting the requirements of miniaturization, lightweight design, integration, multi-functionality, multi-channel operation, and dual polarization. This achieves the electrical specifications of the TR component while also considering reliability and maintainability.

[0047] Table 1: Material Parameters of Microwave Thin Film Multilayer Substrates

[0048]

[0049] Table 2: Material and Thickness Distribution Parameters for Microwave Thin Film Multilayer Substrates

[0050]

[0051]

[0052] refer to Figure 3 , Figure 4 The eight shielding areas include regions A1, A2, B1, B2, B3, and B4 on the front side of the microwave thin-film multilayer circuit board 3, and regions A3 and A4 on the back side of the microwave thin-film multilayer circuit board 3. These eight shielding areas effectively prevent signal leakage between channels and ensure that each level operates in a stable environment.

[0053] refer to Figure 3 , Figure 4 The A1, A2, A3, and A4 regions are all equipped with S1 amplitude and phase multi-function wave controller chips. The S1 amplitude and phase multi-function wave controller chip is installed inside each of the four shielded regions.

[0054] refer to Figure 3 Areas B1, B2, B3, and B4 are each equipped with S2 power amplifier switch chips, S3 limiting low-noise amplifier chips, and S4 limiting low-noise amplifier chip ports. The ports of S2 power amplifier switch chips, S3 limiting low-noise amplifier chips, and S4 limiting low-noise amplifier chips are also installed inside the four shielded areas. Together with various integrated microwave chips such as the S1 amplitude and phase multi-function wave control chip, they can form four receiving channels and four receiving channels.

[0055] refer to Figure 1 The back cover 1, back shell 2, front shell 4, front frame 5, and front cover 6 are all made of aluminum-silicon material. The interior of the back shell 2 and the front shell 4 are gold-plated. The back cover 1, back shell 2, front shell 4, front frame 5, and front cover 6 are all uniformly nickel-plated. They have the advantages of being lightweight, having good thermal conductivity, high hardness, and strong corrosion resistance. They also have the functions of anti-oxidation, anti-corrosion, and strong solder wetting.

[0056] Referring to Tables 1 and 2, the microwave thin-film multilayer circuit board 3 adopts a ten-layer stack, the substrate material is GNC3008, and the prepreg is GNC300BP. The microwave link inside the microwave thin-film multilayer circuit board 3 adopts a combination of coplanar waveguide transmission lines, coaxial transmission lines, and strip power divider networks, and parallel strip lines for signal transmission. The vias of the microwave thin-film multilayer circuit board 3 are filled with resin, and the surface plating is nickel-palladium-gold, which is not easily deformed and has the functions of low radio frequency loss, low dielectric constant, low coefficient of thermal expansion, and stable electrical performance.

[0057] Referring to Table 2, the microwave thin film multilayer circuit board 3 is processed by two laminations: lamination of layers 1-6 and layers 7-10. A total of 5 GNC3008 boards and 4 GNC300BP boards are used for lamination, which effectively compresses the layout space and improves the surface flatness and solder penetration.

[0058] refer to Figure 3 , Figure 4 The RC components of the S1 amplitude and phase multi-functional wave controller chip, the S2 power amplifier switch chip, and the S3 limiting low noise amplifier chip are all distributed on the surface and bottom layers of the microwave hybrid circuit board. The S2 power amplifier switch chip adopts a low temperature eutectic process. Through reasonable allocation, the component integration is improved, and maintenance and repair are facilitated while ensuring high heat dissipation.

[0059] refer to Figure 1The bonding between the front frame 5 and the back shell 2 adopts a micro-assembly process. The gap between the front frame 5 and the surface of the microwave thin film multilayer circuit board 3 is sealed with conductive adhesive. The gap between the front frame 5 and the microwave thin film multilayer circuit board 3 adopts a laser hermetic sealing process, which effectively shields the signal leakage in the cavity space. The hermeticity meets military standards (10-9 Pa·m3 / s leakage rate), ensuring the long-term reliability of the SIP component.

[0060] Brief description of usage: (Refer to) Figure 3 , Figure 4 , Figure 5 , Figure 7 , Figure 9 The working principle is explained below: Transmit mode: When the TR port receives the RF excitation signal, it first passes through the stripline transmission line and the 1-to-2 power divider network inside the microwave thin-film multilayer circuit board, and then is transmitted to the COM port of the S1 amplitude-phase multi-function wave controller chip in area A1. The amplitude-phase multi-function wave controller chip has the capabilities of signal amplification, digitally controlled attenuation, digitally controlled phase shifting, attenuation tuning, and +5V voltage drive. After being amplified and output by the amplitude-phase multi-function wave controller chip, the signal reaches the S2 power amplifier switch chip in area B1. The power amplifier switch chip has the functions of signal amplification and switch selection. After being amplified and output by the power amplifier switch chip, the signal is finally sent to the antenna end through the stripline transmission line. The other three transmit channels are the same as above.

[0061] H Receive Mode: When the antenna H port receives an RF signal, it is first sent to the S2 power amplifier switch chip port in area B1 via a stripline transmission line. After the power amplifier switch chip's receive channel is activated, the signal is transmitted to the S3 limiting low-noise amplifier chip port in area B1. The limiting low-noise amplifier chip has maximum input power limiting protection and small-signal amplification functions. After being amplified by the limiting low-noise amplifier chip, the signal reaches the R port of the S1 amplitude-phase multi-function beam control chip in area A1. At this point, the signal is amplified a second time by the amplitude-phase multi-function beam control chip, and finally transmitted to the TR port via a 1-to-2 power divider network and a stripline transmission line. The other three receive channels are the same.

[0062] V-receive state: When the antenna V port receives the radio frequency signal, it is first sent to the S4 limiting low noise amplifier chip port in area B1 through the stripline transmission line. After being amplified by the limiting low noise amplifier chip, it reaches the stripline transmission line, and then is sent to the R port of the S1 amplitude and phase multi-function wave controller chip in area A3 through the stripline transmission line. At this time, the signal is amplified a second time by the amplitude and phase multi-function wave controller chip, and finally reaches the R port through the 1-to-2 power divider network inside the back of the substrate and the stripline transmission line. The other three receiving channels are the same as above.

[0063] Example 2:

[0064] refer to Figure 6A Ku-band four-channel dual-polarized transceiver module using SIP technology. The SIP transceiver module has 23 electrical parameters. (Refer to...) Figure 5 , Figure 6 The design concept of the SIP transceiver component is explained:

[0065] (1) Frequency range indicators depend on the operating frequency range of the S2 power amplifier switch chip, the S1 amplitude and phase multi-function wave control chip and the S3 low noise amplifier. The selection criteria are wide-bandwidth, high-gain and low-noise devices to ensure that the frequency operates in the range of 15-17GHz.

[0066] (2) The peak power output depends on the peak output capability of the S2 power amplifier switch chip. The selection criteria are high-power, high-efficiency devices to ensure that the peak power output is above 43dBm.

[0067] (3) Noise figure index. The noise figure is related to the noise figure and gain of each module in the entire cascaded network. According to the noise figure formula of multi-level cascaded network: NF=NF1+(NF2-1) / G1+(NF3-1) / G1G2+(NFn-1) / G1G2...Gn-1, the link noise figure of the SIP transceiver component is controlled within 3dB by performing link noise simulation with ADS software.

[0068] (4) Channel gain index: The channel gain is determined by the sum of the gains of the S3 low-noise amplifier and the S1 amplitude-phase multi-function wave control chip in the receiving path, ensuring a total gain of 34dB.

[0069] (5) The third-order intermodulation index depends on the linearity of the S3 low-noise amplifier and the S1 amplitude-phase multi-function wave control chip in the receiving path, ensuring that the third-order intermodulation is greater than -60dBC.

[0070] (6) Gain flatness index depends on the gain flatness of the link. The gain curve of the S3 low noise amplifier in this frequency band is mostly negative. A positive slope equalizer can be added to the link to cancel each other out and ensure that the overall link gain flatness is within 2dB.

[0071] (7) The attenuation and phase shift control range and accuracy indicators depend on the accuracy of the selected S1 amplitude and phase multi-functional wave control chip, ensuring that the attenuation accuracy is within 0.3+6% and the phase shift accuracy is within 6°.

[0072] (8) Gain high and low temperature change index: Since the high and low temperature change of the two-stage amplification is small, no processing is required.

[0073] (9) Amplitude consistency index: The attenuation tuning function of the S1 amplitude and phase multi-functional wave control chip can be used to ensure that the consistency between channels is within ±1dB.

[0074] (10) Phase consistency index depends on the consistency of the devices and electrical length of each channel in the link. Since the link is short, no processing is required.

[0075] (11) The interface standing wave ratio depends on the simulation parameters of the transmission lines S11 and S22 at the input and output ends, ensuring that the component interface standing wave ratio is within 2.5dB.

[0076] Example 3:

[0077] refer to Figure 1 , Figure 2 , Figure 8 , Figure 10 , Figure 11 A Ku-band four-channel dual-polarized TR component based on SIP technology, implemented to meet the goals of miniaturization, lightweighting, and integration of SIP transceiver components, with the following specific measures:

[0078] (1) Miniaturized and lightweight overall structure design. For example... Figure 1 As shown, the SIP transceiver assembly has an overall structure consisting of 6 layers. The front housing 4 and the back housing 2 are 40mm × 34mm × 10mm in size and weigh approximately 80g. The microwave thin-film multilayer circuit board 3 is the substrate and component layer with a thickness of 1.4mm. The maximum stacked height of the substrate and components is 5.5mm, and the weight is approximately 40g. The thin walls on both sides of the front frame 5 are 1mm thick and weigh approximately 20g. The front cover plate 6 is 0.5mm thick and weighs approximately 10g. The back cover plate 1 is 0mm thick and weighs approximately 5g. All structural components of this SIP transceiver assembly are made of aluminum-silicon material. Its total volume is 40mm × 34mm × 10mm, and its total weight is approximately 155g.

[0079] Integrated design of microwave thin-film multilayer circuit substrate. The substrate is manufactured using a multilayer lamination process and consists of 10 layers. (Reference) Figure 8 As shown: 1L is the front signal layer, 2L is the front power divider network layer, 3L is the cutout layer, 5L is the control and power layer, 7L is the +28V negative layer, 9L is the back power divider network, and 10L is the back signal layer. 4L, 6L, and 8L are shielding ground layers. When using vertically transitioned metallized vias to transmit signals, excessively long vias can lead to high parasitic inductance and increased impedance. Therefore, solder rings need to be appropriately added to the metal layers through which the metallized vias pass to increase capacitive reactance and reduce impedance, thus achieving impedance matching. For surface coplanar waveguide transmission lines, the gap between ground vias is controlled to be less than one-twentieth of the wavelength. Simultaneously, to form a uniform ground plane in the stripline circuit, the top and bottom ground planes of the metallized ground vias are connected, thus minimizing the possibility of current density differences between different ground planes. (Reference) Figure 10 , Figure 11 , Figure 12As shown, the HFSS simulation model and its simulation parameters show a 50-ohm matching, low insertion loss, and good VSWR, meeting the usage requirements. When distributing the surface microwave chip and RC components, the microwave, power supply, and control zones are isolated to prevent electromagnetic interference.

[0080] Example 4:

[0081] refer to Figure 1 , Figure 3 , Figure 4 , Figure 8 A Ku-band four-channel dual-polarized TR component based on SIP technology, with specific implementation measures to meet the goals of maintainability, reliability, and long-term stability of SIP transceiver components:

[0082] (1) SMT Placement: Reference Figure 1 , Figure 8 High-temperature solder Sn63Pb37 (melting point 183°C) is stenciled onto a microwave thin-film multilayer circuit board 3. After printing, the board is placed on the surface of the back shell 2, and the front shell 4 is pressed on top. The board is then placed in a vacuum reflow oven for integrated sintering. After passing inspection, the board undergoes ultrasonic cleaning and X-ray inspection, requiring a solder penetration rate of over 90% to ensure overall grounding reliability. Following this, the chip bonding stage begins. The pick-and-place machine program is set to ensure uniform distribution and good wetting of the conductive adhesive on the bottom of the microwave chip. The chip is then baked and cured in a 120°C oven. After these steps, a low-temperature soldering stage begins. The high-temperature eutectic molybdenum-copper sheet is sintered onto the raised surface of the back shell 2 using lead-free indium tin solder paste Sn48 / In52 (melting point 140°C). The SIP transceiver assembly employs three temperature gradient curing methods to meet the maintainability target.

[0083] (2) Micro-assembly bonding: Reference Figure 1 , Figure 3 , Figure 4 As shown, the front frame 5 is mounted on top of the microwave thin-film multilayer circuit board. First, the front frame 5 is placed inside the front housing 4 according to the assembly drawing. Conductive adhesive is applied to the joints between the back housing 2, the front housing 4, the front frame 5, and the microwave thin-film multilayer circuit board 3. After high-temperature baking, the conductive adhesive cures, fixing the front frame 5 onto the microwave thin-film multilayer circuit board 3. Because the top and bottom ground layers of the metallized ground holes in the microwave thin-film multilayer circuit board 3 are connected, and the conductive adhesive, the front frame 5, the back housing 2, and the front housing 4 have good conductivity, each internal cavity, after being independently sealed, forms a shielding ground layer that isolates interference signals, meeting the goal of long-term reliability.

[0084] Laser hermetic sealing: Reference Figure 1 , Figure 3 , Figure 4As shown, the inner sides of the back shell 2 and the front shell 4 are made into a stepped structure, which can better withstand external pressure than a flat structure. This also allows for precise positioning of the back cover plate 1 and the front cover plate 6 when welding to the back shell 2 and the front shell 4, ensuring consistent contact resistance and resulting in a more uniform weld width, thus guaranteeing the sealing performance of the laser sealing weld. Laser sealing requires a laser welding machine. Under proper welding specifications, a good welding effect can be achieved on 1mm thick AI-27SI welds without weld cracks. Increasing the welding current, pulse width, and frequency increases the weld penetration; decreasing the welding speed further increases the penetration, resulting in finer, more delicate fish-scale-like ripples and improved weld quality. Simultaneously, the four corners of the back cover plate 1, the front cover plate 6, and the four corners of the shell bosses are rounded, with consistent rounded corner dimensions to prevent excessive heat accumulation at the corners during sealing, which could cause electrode arcing and lead to seal failure. The rear cover 1 and the front cover 6 have an inwardly convex design, which reduces the air cavity and radiation interference, and also provides excellent sealing to isolate the components from the harsh external working environment. The final seal achieves a military-grade airtightness standard (10⁻⁹ Pa·m³ / s leakage rate), ensuring the long-term stability of the SIP transceiver assembly.

[0085] This specific embodiment is merely an explanation of the present invention and is not intended to limit the invention. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they are within the scope of the claims of the present invention.

Claims

1. A Ku-band four-channel dual-polarized TR component using SIP technology, comprising a back cover (1), a back housing (2), a microwave thin-film multilayer circuit board (3), a front housing (4), a front frame (5), and a front cover (6), characterized in that: The front frame (5) penetrates the interior of the front housing (4) and is bonded to one side of the microwave thin film multilayer circuit board (3). The back housing (2) and the front housing (4) are installed together to encapsulate and fix the microwave thin film multilayer circuit board (3) between them. A back cover plate (1) is installed on the side of the back housing (2) away from the front housing (4). A front cover plate (6) is installed on the side of the front housing (4) away from the back housing (2) to encapsulate and fix the front frame (5). The front frame (5) is bonded to one side of the microwave thin film multilayer circuit board (3), dividing the front and back of the microwave thin film multilayer circuit board (3) into 8 shielding areas.

2. The Ku-band four-channel dual-polarized TR component of SIP technology according to claim 1, characterized in that: The eight shielding areas include regions A1, A2, B1, B2, B3, and B4 on the front side of the microwave thin-film multilayer circuit board (3), and regions A3 and A4 on the back side of the microwave thin-film multilayer circuit board (3).

3. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 2, characterized in that: The A1, A2, A3, and A4 regions are all equipped with S1 amplitude and phase multi-functional wave control chips.

4. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 2, characterized in that: The ports of the S2 power amplifier switch chip, the S3 limiting low noise amplifier chip, and the S4 limiting low noise amplifier chip are all installed in the B1, B2, B3, and B4 regions.

5. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 1, characterized in that: The back cover (1), back shell (2), front shell (4), front frame (5), and front cover (6) are all made of aluminum-silicon material. The interior of the back shell (2) and the front shell (4) are gold-plated. The back cover (1), back shell (2), front shell (4), front frame (5), and front cover (6) are all uniformly nickel-plated.

6. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 1, characterized in that: The microwave thin-film multilayer circuit board (3) is made of ten-layer stacked boards. The board material is GNC3008 and the prepreg is GNC300BP. The microwave link inside the microwave thin-film multilayer circuit board (3) is a combination of coplanar waveguide transmission lines, coaxial transmission lines, strip power dividers, and parallel strip lines for signal transmission. The vias of the microwave thin-film multilayer circuit board (3) are made of resin plugs and the surface plating is nickel-palladium-gold.

7. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 1, characterized in that: The microwave thin-film multilayer circuit board (3) is processed by two laminations, laminating layers 1-6 and 7-10, and using a total of 5 GNC3008 boards and 4 GNC300BP boards for lamination.

8. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 4, characterized in that: The RC components of the S1 amplitude and phase multi-functional wave control chip, the S2 power amplifier switch chip, and the S3 limiting low noise amplifier chip are all distributed on the surface and bottom layers of the microwave hybrid circuit board. The S2 power amplifier switch chip adopts a low temperature eutectic process.

9. A Ku-band four-channel dual-polarized TR component based on SIP technology according to claim 1, characterized in that: The bonding between the front frame (5) and the back shell (2) is achieved using a micro-assembly process. The gap between the front frame (5) and the surface of the microwave thin film multilayer circuit board (3) is sealed with conductive adhesive. The gap between the front frame (5) and the microwave thin film multilayer circuit board (3) is sealed using a laser hermetic sealing process.

Images