Semiconductor process equipment and control method of semiconductor process equipment

Abstract

The embodiment of the invention provides semiconductor process equipment and a control method of the semiconductor process equipment. The semiconductor process equipment comprises a process chamber, a pressure detection module communicated with the process chamber and a control module, the pressure detection module is used for detecting atmospheric pressure before the process task starts; the control module is used for acquiring a preset process formula, including the process temperature, the process time and the process pressure, of a process task performed by the workpiece in the process chamber; when the process temperature is greater than or equal to the preset temperature, acquiring atmospheric pressure; determining a target pressure according to the atmospheric pressure and a preset pressure difference; determining the target time of the process task according to the preset pressure difference, and carrying out the process task according to the process temperature, the target pressure and the target time; or the target temperature of the process task is determined, and the process task is carried out according to the target temperature, the target pressure and the process time, so that the process chamber can be ensured not to deform at high temperature, and the gas pressure can be ensured to be stable, so that the film thickness of the workpiece is consistent.

Description

Technical Field

[0001] This invention relates to the field of semiconductor control technology, and in particular to a semiconductor process equipment and a control method for the semiconductor process equipment. Background Technology

[0002] Oxidation annealing is widely used in the production of various semiconductor components, such as wafers. Specifically, the component is placed in the process chamber of a semiconductor processing equipment, and gases such as nitrogen or argon are introduced, causing a specific reaction at high temperatures to form an oxide film. During oxide film formation, precise control of the pressure within the process chamber can effectively regulate the growth rate and quality of the oxide film, thereby achieving precise control over the film thickness. Pressure control can also affect the microstructure and properties of the oxide film; appropriate pressure conditions can promote oxide film densification, reduce defects and porosity, and improve the chemical stability of the oxide film. Therefore, precise pressure control is a crucial factor in achieving high-quality, uniform film thickness control during oxide film formation. Summary of the Invention

[0003] To address the aforementioned problems, embodiments of the present invention disclose a semiconductor process equipment and a control method for the semiconductor process equipment.

[0004] In a first aspect, embodiments of the present invention provide a semiconductor process apparatus, comprising: a process chamber, a pressure detection module communicating with the process chamber, and a control module;

[0005] The pressure detection module is used to detect atmospheric pressure before the start of the process task;

[0006] The control module is used to acquire a preset process formula for the workpiece in the process chamber to perform a process task; the preset process formula includes process temperature, process time, and process pressure; when the process temperature in the preset process formula is greater than or equal to a preset temperature, acquire the atmospheric pressure detected by the pressure detection module; determine the target pressure of the process task based on the preset pressure difference between the atmospheric pressure and the process temperature; determine the target time of the process task based on the preset pressure difference; control the process components in the process chamber to perform the process task according to the process temperature, the target pressure, and the target time; or, determine the target temperature of the process task based on the preset pressure difference; control the process components in the process chamber to perform the process task according to the target temperature, the target pressure, and the process time.

[0007] Optionally, the semiconductor process equipment further includes a transfer tube and a pressure control valve disposed on the transfer tube;

[0008] The pressure detection module is also used to detect the gas pressure in the process chamber during the process task;

[0009] The control module is used to acquire the gas pressure in the process chamber detected by the pressure detection module; and adjust the opening of the pressure control valve according to the gas pressure in the process chamber to adjust the gas pressure in the process chamber to the target pressure.

[0010] Optionally, the pressure detection module includes a pressure sensor, a first valve, and a second valve; one end of the first valve is connected to the transmission pipe, and the other end is connected to the pressure sensor; one end of the second valve is connected to both the first valve and the pressure sensor, and the other end is used to communicate with the outside.

[0011] The pressure detection module is used to control the first valve to close and the second valve to open, and to detect the atmospheric pressure through the pressure sensor; or it is used to control the first valve to open and the second valve to close, and to detect the gas pressure in the process chamber through the pressure sensor.

[0012] Optionally, the transmission pipe includes a first transmission pipe, a second transmission pipe, and a third transmission pipe connected to each other. One end of the first transmission pipe is connected to one end of the second transmission pipe and one end of the third transmission pipe, respectively. The other end of the first transmission pipe is connected to the process chamber. One end of the first valve of the pressure detection module is connected to the first transmission pipe. The pressure control valve is disposed in the second transmission pipe.

[0013] The semiconductor process equipment further includes a condensation module disposed in the second transmission tube. The condensation module is disposed between the pressure control valve and the connection between the second transmission tube and the first transmission tube. The condensation module is used to cool the gas transmitted to the second transmission tube via the first transmission tube. The third transmission tube is used to discharge the liquid liquefied by the condensation module.

[0014] Optionally, the control module is configured to, when the process temperature in the preset process formula is greater than or equal to the preset temperature, use the difference between the atmospheric pressure and the preset pressure difference corresponding to the process temperature as the target pressure of the process task.

[0015] Optionally, the control module is configured to acquire a pressure influence factor and a time influence factor; determine a target time difference based on the preset pressure difference, the pressure influence factor, the process time, and the time influence factor; and determine the target time of the process task based on the process time and the target time difference.

[0016] Optionally, the control module is configured to acquire pressure influence factors and temperature influence factors; determine a target temperature difference based on the preset pressure difference, the pressure influence factors, the process temperature, and the temperature influence factors; and determine the target temperature of the process task based on the process temperature and the target temperature difference.

[0017] Optionally, the control module is further configured to output an alarm message and suspend the process task when the target temperature difference is greater than a preset temperature range, the target pressure difference is greater than a preset pressure range, or the target time difference is greater than a preset time range.

[0018] Optionally, the control module is further configured to, when the process temperature in the preset process formula is lower than the preset temperature, use the process pressure in the preset process formula as the target pressure and the process time in the preset process formula as the target time; and control the workpiece in the process chamber to perform the process task according to the process temperature, the target pressure and the target time.

[0019] In a second aspect, embodiments of the present invention provide a control method for semiconductor process equipment, the semiconductor process equipment comprising: a process chamber, and a pressure detection module communicating with the process chamber, the method comprising:

[0020] A preset process formula for the workpiece in the process chamber to perform a process task is obtained; the preset process formula includes process temperature, process time and process pressure.

[0021] When the process temperature in the preset process formula is greater than or equal to the preset temperature, the atmospheric pressure detected by the pressure detection module before the start of the process task is obtained.

[0022] The target pressure for the process task is determined based on the preset pressure difference between the atmospheric pressure and the process temperature.

[0023] Based on the preset pressure difference, the target time for the process task is determined; the process components in the process chamber are controlled to perform the process task according to the process temperature, the target pressure, and the target time; or...

[0024] Based on the preset pressure difference, the target temperature of the process task is determined; the process components in the process chamber are controlled to perform the process task according to the target temperature, the target pressure, and the process time.

[0025] Optionally, the semiconductor process equipment further includes a pressure control valve disposed on the transfer tube, wherein controlling the workpiece in the process chamber to perform process tasks according to the process temperature, the target pressure, and the target time includes:

[0026] The pressure detection module detects the gas pressure in the process chamber during the process task.

[0027] The opening of the pressure control valve is adjusted according to the gas pressure in the process chamber to adjust the gas pressure in the process chamber to the target pressure.

[0028] Optionally, the pressure detection module includes a pressure sensor, a first valve, and a second valve; one end of the first valve is connected to the transmission pipe, and the other end is connected to the pressure sensor; one end of the second valve is connected to both the first valve and the pressure sensor, and the other end is used to communicate with the outside; acquiring the atmospheric pressure detected by the pressure detection module before the start of the process includes:

[0029] Before the process begins, the first valve is closed and the second valve is opened, and the atmospheric pressure is detected by the pressure sensor.

[0030] The step of acquiring the gas pressure in the process chamber detected by the pressure detection module during the process task includes:

[0031] During the process, the first valve is opened and the second valve is closed, and the gas pressure in the process chamber is detected by the pressure sensor.

[0032] Optionally, the transmission pipe includes a first transmission pipe, a second transmission pipe, and a third transmission pipe connected to each other. One end of the first transmission pipe is connected to one end of the second transmission pipe and one end of the third transmission pipe, respectively. The other end of the first transmission pipe is connected to the process chamber. One end of the first valve of the pressure detection module is connected to the first transmission pipe. The pressure control valve is disposed in the second transmission pipe.

[0033] The semiconductor process equipment further includes a condensation module disposed in the second transmission tube. The condensation module is disposed between the pressure control valve and the connection between the second transmission tube and the first transmission tube. The condensation module is used to cool the gas transmitted to the second transmission tube via the first transmission tube. The third transmission tube is used to discharge the liquid liquefied by the condensation module.

[0034] Optionally, determining the target pressure for the process task based on the preset pressure difference between the atmospheric pressure and the process temperature includes:

[0035] When the process temperature in the preset process formula is greater than or equal to the preset temperature, the difference between the atmospheric pressure and the preset pressure difference corresponding to the process temperature is taken as the target pressure of the process task.

[0036] Optionally, determining the target time for the process task based on the preset pressure difference includes:

[0037] Obtain the influence factors of stress and time;

[0038] The target time difference is determined based on the preset pressure difference, the pressure influence factor, the process time, and the time influence factor.

[0039] The target time for the process task is determined based on the process time and the target time difference.

[0040] Optionally, determining the target temperature of the process task based on the preset pressure difference includes:

[0041] Obtain the influence factors of pressure and temperature;

[0042] The target temperature difference is determined based on the preset pressure difference, the pressure influence factor, the process temperature, and the temperature influence factor.

[0043] The target temperature of the process task is determined based on the difference between the process temperature and the target temperature.

[0044] Optionally, the method further includes:

[0045] When the target temperature difference is greater than a preset temperature range, or the target pressure difference is greater than a preset pressure range, or the target time difference is greater than a preset time range, an alarm message is output and the process task is suspended.

[0046] Optionally, the method further includes:

[0047] When the process temperature in the preset process formula is lower than the preset temperature, the process pressure in the preset process formula is taken as the target pressure, and the process time in the preset process formula is taken as the target time.

[0048] The workpiece in the process chamber is controlled to perform the process task according to the process temperature, the target pressure, and the target time.

[0049] The embodiments of the present invention have the following advantages:

[0050] The semiconductor process equipment of this invention includes: a process chamber, a pressure detection module connected to the process chamber, and a control module; the pressure detection module is used to detect atmospheric pressure before the start of the process task; the control module is used to acquire a preset process formula for the workpiece in the process chamber to perform the process task; the preset process formula includes process temperature, process time, and process pressure; when the process temperature in the preset process formula is greater than or equal to the preset temperature, the atmospheric pressure detected by the pressure detection module is acquired; based on the preset pressure difference between the atmospheric pressure and the process temperature, the target pressure of the process task is determined, so that the process chamber does not deform under high-temperature process conditions by adjusting the process pressure of the preset process formula; based on the preset pressure difference, the target time of the process task is determined, and the process devices in the process chamber are controlled to perform the process task according to the process temperature, the target pressure, and the target time, so that the film thickness of the workpiece can be ensured by adjusting the process time of the preset process formula; or, based on the preset pressure difference, the target temperature of the process task is determined, and the process devices in the process chamber are controlled to perform the process task according to the target temperature, the target pressure, and the process time, so that the film thickness of the workpiece can be ensured by adjusting the process temperature of the preset process formula. In a high-temperature process environment, the embodiments of the present invention can ensure stable gas pressure in the process chamber, resulting in consistent film thickness on the workpiece, and also ensure that the process chamber does not deform. Attached Figure Description

[0051] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0052] Figure 1 This is a structural block diagram of a pressure control system based on related technology 1;

[0053] Figure 2 This is a structural block diagram of a semiconductor process equipment according to an embodiment of the present invention;

[0054] Figure 3 This is a structural block diagram of another semiconductor process equipment according to an embodiment of the present invention;

[0055] Figure 4 This is a schematic diagram of the performance test results of the semiconductor process equipment according to an embodiment of the present invention;

[0056] Figure 5 This is a flowchart illustrating the steps of a control method for semiconductor process equipment according to an embodiment of the present invention;

[0057] Figure 6This is a logic diagram of a control method for semiconductor process equipment provided in an embodiment of the present invention.

[0058] Explanation of reference numerals in the attached figures:

[0059] Pressure control system 10, process chamber 11, transmission pipe 12, condensation device 13, gas-liquid separation device 14, waste liquid box 15, exhaust pipe 16, pressure control device 17, process pressure sampling pipe 18, atmospheric pressure sampling pipe 19; semiconductor process equipment 20, process chamber 21, transmission pipe 22, pressure detection module 23; pressure control valve 31, pressure sensor 32, first valve 33, second valve 34, first transmission pipe 35, second transmission pipe 36, third transmission pipe 37, condensation module 38. Detailed Implementation

[0060] During the process, related technologies typically ensure the pressure in the process chamber is stable by controlling the gas pressure in the process chamber to a pressure value relative to atmospheric pressure (relative pressure control) or controlling the gas pressure in the process chamber to a specified pressure value (absolute pressure control), so as to keep the process results of the workpiece consistent. For example, in the oxidation process, this ensures that the thickness of the oxide film on the workpiece is consistent.

[0061] Reference Figure 1 Taking a vertical furnace as an example, a structural block diagram of the pressure control system of the relevant technology is shown. The pressure control system 10 includes: a process chamber 11, a transmission pipe 12, a condensation device 13, a gas-liquid separation device 14, a waste liquid box 15, an exhaust pipe 16, a pressure control device 17, a process pressure sampling pipe 18, and an atmospheric pressure sampling pipe 19.

[0062] Taking the oxidation process as an example, workpieces such as wafers undergo a specific reaction with gas at high temperature in the process chamber 11 to form an oxide film. The reacted gas then enters the pressure control device 17 through the transmission pipe 12. The condenser 13 is externally covered by cooling water pipes. After passing through the condenser 13, the gas is fully cooled, and the water vapor also liquefies upon cooling, achieving gas-liquid separation. The gas and liquid after passing through the condenser 13 are separated in the gas-liquid separator 14. The heavier liquid enters the waste liquid box 15 and is then discharged to the plant's waste liquid system, while the lighter gas enters the exhaust pipe 16 and then enters the pressure control device 17. The pressure control device 17 contains a pressure control valve assembly with an adjustable opening degree, which controls the pressure by changing the opening degree. During relative pressure control, pressure sampling is performed through the process pressure sampling pipe 18 and the atmospheric pressure sampling pipe 19. These pipes collect data on the pressure at the gas-liquid separator 14 (representing the pressure of the process chamber 11) and the atmospheric pressure, respectively. The difference is calculated using a differential pressure gauge inside the pressure control device 17, thereby controlling the pressure difference between the process chamber 11 and atmospheric pressure to a specific value. During absolute pressure control, the pressure control device 17 collects the pressure value at the gas-liquid separator 14 through the process pressure sampling pipe 18. The valve group within the pressure control device 17 controls the pressure in the process chamber 11 to a specific value. Finally, the gas is discharged into the plant exhaust pipeline after passing through the pressure control device 17, completing the pressure control process.

[0063] When using relative pressure control, the pressure control system regulates the gas pressure in process chamber 11 based on atmospheric pressure, maintaining a slightly negative pressure (i.e., the pressure inside the process chamber is lower than atmospheric pressure) to ensure smooth airflow. However, atmospheric pressure fluctuates with seasons and special weather conditions, causing instability in the gas pressure within process chamber 11. This affects the uniformity of oxide film thickness, requiring manual adjustment of process time to stabilize production. Therefore, relative pressure control cannot be applied to processes sensitive to film thickness consistency. For example, in gate oxide oxidation, film thickness control needs to reach ±1%, which cannot be achieved using relative pressure control equipment.

[0064] When using absolute pressure control, the gas pressure in process chamber 11 is maintained at a specified value, ensuring consistent film thickness throughout the production process. However, in high-temperature processes (typically above 1000°C), process chamber 11 softens. If the pressure difference between the gas in process chamber 11 and atmospheric pressure is too large, it can cause deformation of the chamber. Therefore, absolute pressure control cannot be applied to high-temperature processes. Furthermore, with continuous advancements in industry processes, the proportion of processes operating above 1000°C is gradually increasing, and these processes exhibit a wider range of film thickness variations affected by pressure.

[0065] The above analysis shows that the existing technologies cannot simultaneously meet the requirements for film thickness consistency and a wide range of process temperature requirements. These technologies can only achieve either relative or absolute voltage control, which significantly limits the capabilities of semiconductor process equipment. For example, some customers, to meet complex production needs, require multiple types of processes on a single semiconductor process equipment, including different high-temperature processes and different voltage control processes. Due to the softening of the process chamber at high temperatures, some existing semiconductor process equipment cannot maintain a consistent oxide film thickness on the workpiece under high-temperature process conditions, which greatly reduces the market competitiveness of semiconductor process equipment.

[0066] To address the problems encountered in related technologies, this invention proposes a semiconductor process equipment. The aim is to solve the problems of unstable gas pressure in the process chamber when using relative pressure control, softening of the process chamber due to high temperatures when using absolute pressure control, and deformation when the difference between the gas pressure in the process chamber and atmospheric pressure is too large. To achieve this goal, embodiments of this invention improve the structure of the semiconductor process equipment, implementing both absolute and relative pressure control methods on the same device. Furthermore, it automatically selects the appropriate pressure control method based on different process temperatures and determines the process parameters required for the task by detecting atmospheric pressure, achieving consistent film thickness control for various processes while ensuring a wide process temperature range for the equipment.

[0067] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0068] Reference Figure 2 Taking a vertical furnace as an example, a structural block diagram of a semiconductor process equipment according to an embodiment of the present invention is shown. Those skilled in the art should understand that the semiconductor process equipment of this embodiment can also be applied to other types of equipment. Figure 2 In the example, the semiconductor process equipment 20 includes: a process chamber 21, a transfer pipe 22 connected to the process chamber 21, a pressure detection module 23 connected to the transfer pipe 22, and a control module (not shown in the figure);

[0069] The pressure detection module 23 is used to detect atmospheric pressure before the start of the process task;

[0070] The control module is used to acquire a preset process formula for the workpiece in the process chamber 21 to perform a process task; the preset process formula includes process temperature, process time, and process pressure; when the process temperature in the preset process formula is greater than or equal to a preset temperature, acquire the atmospheric pressure detected by the pressure detection module 23; determine the target pressure of the process task based on the preset pressure difference between the atmospheric pressure and the process temperature; determine the target time of the process task based on the preset pressure difference; control the process components in the process chamber to perform the process task according to the process temperature, the target pressure, and the target time; or, determine the target temperature of the process task based on the preset pressure difference; control the process components in the process chamber to perform the process task according to the target temperature, the target pressure, and the process time.

[0071] The control module is further configured to, when the process temperature in the preset process formula is lower than the preset temperature, use the process pressure in the preset process formula as the target pressure and the process time in the preset process formula as the target time; and control the workpiece in the process chamber 21 to perform the process task according to the process temperature, the target pressure and the target time.

[0072] In this embodiment of the invention, the semiconductor process equipment is compatible with both absolute voltage control and relative voltage control process modes. Furthermore, it can select an appropriate process mode to execute the process task based on the preset process formula of the workpiece in the process chamber, thereby simultaneously achieving the control function of consistent process results across multiple processes. For oxidation processes, it can achieve consistency in film thickness between processes.

[0073] Specifically, when the process temperature in the preset process formula is greater than or equal to the preset temperature, there is a risk of softening in the process chamber. In this case, the process mode can be determined as a relative pressure control mode. To achieve consistent performance of the workpiece's process results, the target pressure and target time of the process need to be redefined and cannot be directly used from the preset process formula. The determination of the target pressure and target time can be achieved through the control module. First, the preset pressure difference is determined based on the softening risk of the process chamber. Next, the target pressure of the process task is determined based on the atmospheric pressure detected by the pressure detection module and the preset pressure difference. Then, the target time of the process task is determined based on the preset pressure difference, and the process task is carried out in the relative pressure control mode according to the process temperature, target pressure, and target time. Alternatively, the target temperature of the process task is determined based on the preset pressure difference, and the process task is carried out in the relative pressure control mode according to the target temperature, target pressure, and process time.

[0074] When the process temperature in the preset process formula is lower than the preset temperature, there is no risk of softening in the process chamber. In this case, the process mode can be determined as absolute pressure control mode. The target pressure and target time of the process can be the set values ​​in the preset process formula.

[0075] The preset temperature can be 1000 degrees Celsius. Those skilled in the art can set the preset temperature and preset pressure difference to other appropriate values ​​according to the concept of this invention, and this invention does not limit them.

[0076] The semiconductor process equipment of this invention can detect atmospheric pressure through a pressure detection module; obtain a preset process formula for the workpiece in the process chamber to perform the process task through a control module; obtain the atmospheric pressure detected by the pressure detection module when the process temperature in the preset process formula is greater than or equal to a preset temperature; determine the target pressure of the process task based on the atmospheric pressure and the preset pressure difference, so that the process chamber can be kept from deforming in a high-temperature process environment by adjusting the process pressure of the preset process formula; determine the target time of the process task based on the preset pressure difference, and control the process devices in the process chamber to perform the process task according to the process temperature, the target pressure, and the target time, so that the film thickness of the workpiece can be kept consistent by adjusting the process time of the preset process formula; or, determine the target temperature of the process task based on the preset pressure difference, and control the process devices in the process chamber to perform the process task according to the target temperature, the target pressure, and the process time, so that the film thickness of the workpiece can be kept consistent by adjusting the process temperature of the preset process formula. This invention, in a high-temperature process environment, can ensure stable gas pressure in the process chamber, ensuring consistent film thickness of the workpiece, and also ensure that the process chamber does not deform.

[0077] Reference Figure 3This diagram illustrates a structural block diagram of another semiconductor process apparatus according to an embodiment of the present invention. The semiconductor process apparatus 20 further includes: a pressure control valve 31, such as a butterfly valve, disposed on the transmission pipe 22; the pressure detection module 23 includes a pressure sensor 32, a first valve 33, and a second valve 34, wherein the pressure sensor 32 can be a vacuum gauge, and the first valve 33 and the second valve 34 can be pneumatic valves; one end of the first valve 33 is connected to the transmission pipe 22, and the other end is connected to the pressure sensor 32; one end of the second valve 34 is connected to both the first valve 33 and the pressure sensor 32, and the other end is used to communicate with the outside; the transmission pipe 22 includes a first transmission pipe 35, a second transmission pipe 36, and a third transmission pipe 37 connected to each other, the first transmission pipe 35, the second transmission pipe 36, and the third transmission pipe 37 being interconnected. The transmission pipe 36 and the third transmission pipe 37 can be connected to each other, for example, via a T-junction. The first transmission pipe 35 is connected to the process chamber 21. One end of the first valve 33 of the pressure detection module 23 is connected to the first transmission pipe 35. The pressure control valve 31 is disposed in the second transmission pipe 36. The semiconductor process equipment 20 also includes a condensation module 38 disposed in the second transmission pipe 36. The gas output from the process chamber 21 is transmitted to the second transmission pipe 36 through the first transmission pipe 35. After being cooled by the condensation module 38 in the second transmission pipe 36, it is discharged from the pressure control valve 31. The water vapor in the gas is liquefied and discharged from the third transmission pipe 37.

[0078] The pressure detection module 23 is also used to detect the gas pressure in the process chamber 21 during the process task; control the first valve 33 to close and the second valve 34 to open, and detect the atmospheric pressure through the pressure sensor 32; control the first valve 33 to open and the second valve 34 to close, and detect the gas pressure in the process chamber 21 through the pressure sensor 32.

[0079] The control module is used to acquire the gas pressure in the process chamber 21 detected by the pressure detection module 23; and adjust the opening of the pressure control valve according to the gas pressure in the process chamber 21 to adjust the gas pressure in the process chamber 21 to the target pressure.

[0080] The semiconductor process equipment in this embodiment of the invention, through improved system structure, realizes both absolute and relative voltage control methods on the same system. At the same time, based on the preset process formulas for different process tasks, it can automatically select the appropriate voltage control method and calculate the required process parameters, thereby achieving consistent control of process results for multiple processes and ensuring a wide range of process temperature capabilities for the semiconductor process equipment.

[0081] In one embodiment, the control module is configured to, when the process temperature in the preset process formula is greater than or equal to the preset temperature, use the difference between the atmospheric pressure and the preset pressure difference corresponding to the process temperature as the target pressure of the process task.

[0082] In this embodiment of the invention, under relative pressure control mode, the control module can use the difference between atmospheric pressure and a preset pressure difference as the target pressure for the process task. The preset pressure difference is a pressure parameter preset by technicians based on the softening risk of the process chamber at high temperatures, and can be 5 Torr. 1 Torr is defined as the pressure of 1 millimeter of mercury (mmHg), that is, under standard gravitational acceleration, the pressure generated by a 1-millimeter-high mercury column is equal to 760 Torr under standard atmospheric pressure.

[0083] For example, if the preset pressure difference corresponding to the process chamber at 1000-1100℃ is 5 Torr, and the atmospheric pressure is 750 Torr, then the target pressure for this process task is 745 Torr. To ensure smooth airflow, the process pressure is usually controlled at a negative pressure; therefore, the final target pressure is less than the atmospheric pressure.

[0084] In one embodiment, the control module is configured to acquire a pressure influence factor and a time influence factor; determine a target time difference based on the preset pressure difference, the pressure influence factor, the process time, and the time influence factor; and determine the target time of the process task based on the process time and the target time difference.

[0085] In this embodiment of the invention, to ensure consistent process results for the workpiece despite varying gas pressures within the process chamber, after determining the target pressure for the process task, the target time for the process task can be further determined based on the target pressure. The control module can acquire the pressure influence factor and time influence factor pre-set by technicians in the semiconductor process equipment; then, based on the difference between the target pressure and the process pressure, a target pressure difference is determined; next, based on the target pressure difference, the pressure influence factor, the process time, and the time influence factor, a target time difference is determined; finally, the difference between the process time and the target time difference is taken as the target time of the process task. Specifically, the target time of the process task can be calculated using the following formula:

[0086] P = P1 - P0

[0087] THK + P*(THK / P) = THK + t*(THK / t)

[0088] t1 = t0 - t

[0089] Where P is the target pressure difference, P1 is the target pressure, P0 is the process pressure, THK / P is the pressure influence factor, THK / t is the time influence factor, t is the target time difference, t0 is the process time, and t1 is the target time.

[0090] The pressure and time influence factors can be calculated experimentally beforehand. Specifically, taking the pressure influence factor THK / P as an example, while keeping the process time and temperature constant, the effect of two pressure values ​​(high and low) on the process results is tested. The pressure difference is recorded as ΔP. ​​Taking the oxidation process as an example, the change in film thickness is recorded as ΔTHK. The pressure influence factor THK / P = ΔTHK / ΔP can then be calculated. The influence of changes in pressure, time, and temperature within a small range on the oxide film thickness can be considered a linear relationship. The time and temperature influence factors can be calculated using the same method.

[0091] For example, if the preset process formula specifies a process temperature of 1100℃, a process time of 30 minutes, and a process pressure of 735 Torr, the control module first determines that the process temperature T = 1100℃ > 1000℃, indicating a risk of quartz softening. In this case, a relative pressure control mode is executed. In this mode, the machine does not use the preset process pressure and time. Instead, it detects atmospheric pressure (750 Torr) using a pressure detection module. The target pressure for the process task is then determined. The permissible pressure difference at 1100℃ is 5 Torr. To ensure no softening risk in the process chamber and to maintain negative pressure within the chamber, the target pressure is set at 745 Torr. Subsequently, the target time was calculated. Based on the pressure difference between the target pressure and the process pressure in the preset process formula (745Torr - 735Torr = 10Torr), the pressure influence factor (THK / P = 5A / Torr) was obtained. It was determined that when using 745Torr for pressure control, the film thickness change compared to 735Torr was 10*5 = 50A. Then, the time influence factor (THK / t = 25A / min) was obtained to determine how much process time needs to be changed to eliminate the 50A film thickness difference, i.e., 50A / (25A / min) = 2min. Therefore, the target time needs to be set to 30-2 = 28min. Finally, the process parameters of the target pressure of 745Torr and the target time of 28min were used to carry out the process task of this group, achieving the same film thickness performance as the process tasks of other groups.

[0092] In one embodiment, the control module is configured to acquire a pressure influence factor and a temperature influence factor; determine a target temperature difference based on the preset pressure difference, the pressure influence factor, the process temperature, and the temperature influence factor; and determine the target temperature of the process task based on the process temperature and the target temperature difference.

[0093] Besides maintaining a constant process temperature and adjusting process pressure and time to ensure consistent process results, the embodiments of the present invention can also maintain a constant process time and achieve consistency in process results by changing process temperature and pressure. The calculation method for the target temperature is the same as the calculation method for the target time. Specifically, the control module can obtain the temperature influence factor; determine the target temperature difference based on the target pressure difference, pressure influence factor, process temperature, and temperature influence factor; use the difference between the process temperature and the target temperature difference as the target temperature for the process task; and control the workpiece in the process chamber to perform the process task according to the target temperature, target pressure, and process time.

[0094] In one embodiment, the control module is further configured to output an alarm message and suspend the process task when the target temperature difference is greater than a preset temperature range, the target pressure difference is greater than a preset pressure range, or the target time difference is greater than a preset time range.

[0095] In this embodiment of the invention, the target temperature difference, target pressure difference, and target time difference are calculated based on temperature influence factors, pressure influence factors, and time influence factors, respectively. If the adjusted values ​​of the process parameters obtained through the above calculations are too large, it may cause equipment failure in the semiconductor process equipment. Therefore, the adjustment of the process parameters of the semiconductor process equipment needs to be within the allowable temperature, pressure, and time variation range of the process. This range can be set in advance by technicians according to the performance of the semiconductor process equipment. Typically, preset temperature range, preset pressure range, and preset time range are set, which are ±10% of the process temperature, process time, and process pressure in the preset process formula, respectively. If the target temperature difference is greater than the preset temperature range, or the target pressure difference is greater than the preset pressure range, or the target time difference is greater than the preset time range, the control module can output an alarm message and suspend the process task. Technicians can then determine whether the currently determined process parameters are suitable for the process task to avoid adverse effects on product production due to special circumstances. Those skilled in the art can set the adjustment range of the process parameters to other appropriate values ​​according to the concept of this invention, and this invention does not limit this.

[0096] For example, when the semiconductor process equipment performs the same process task with the preset process formula of 1100°C, 30 min, and 735 Torr, the atmospheric pressure collected this time is 770 Torr. After calculation, the target pressure is 765 Torr, and the target time is 24 min. At this time, the target time difference is 6 min, which exceeds the allowable range of 10% (±3 min) of 30 min. The control module will issue an alarm message and the current process parameters, and the technicians will determine whether the process task should proceed. This judgment process occurs before the process task begins to avoid affecting the actual product production.

[0097] Reference Figure 4 Taking the oxidation process as an example, a schematic diagram of the performance test results of the semiconductor process equipment according to an embodiment of the present invention is shown. The process parameters in the preset process formula are a process temperature of 1100℃, a process time of 30 min, and a process pressure of 735 Torr. The film thickness variation trend of the workpiece under different atmospheric pressures is tested. Among them, the five groups on the left are the test results without using the semiconductor process equipment of the present invention, and the five groups on the right are the test results with the semiconductor process equipment of the present invention. It can be seen from the data in the figure that the film thickness data (Thickness) of the semiconductor process equipment without using the present invention changes with the pressure (Pressure-ATM), and the film thickness (THK) of the workpiece varies greatly; while after using the semiconductor process equipment of the present invention, the film thickness difference of the five processes is significantly reduced, achieving good inter-process film thickness consistency. Through the above structural improvements and process optimizations, the semiconductor process equipment of this invention can switch between absolute and relative voltage control modes within a single device. By utilizing the differences and advantages and disadvantages of the two voltage control modes, different voltage control methods can be selected according to different preset process formulations, and the corresponding process parameters can be adjusted to achieve consistent film thickness control under various process conditions.

[0098] The semiconductor process equipment of this invention can determine the pressure control mode for the process task based on the process temperature in the preset process recipe through the control module. Under low-temperature conditions, an absolute pressure control mode can be used, following the set values ​​in the preset process recipe. Under high-temperature conditions, a relative pressure control mode can be used, determining the target pressure of the process task based on atmospheric pressure and a preset pressure difference. This allows the process chamber to remain undeformed under high-temperature process conditions by adjusting the process pressure in the preset process recipe. The target time for the process task is determined based on the process time, process pressure, and target pressure. This allows the consistency of the workpiece's process results to be ensured by adjusting the process time in the preset process recipe. By controlling the workpiece in the process chamber to perform the process task according to the process temperature, target pressure, and target time, the gas pressure in the process chamber can be kept stable under high-temperature process conditions, ensuring consistent workpiece process results and preventing deformation of the process chamber. The control module can also maintain a constant process time and achieve process result consistency by changing the process temperature and process pressure. Furthermore, when the adjustment range of process parameters exceeds the preset range, an alarm message can be output and the process task can be paused to avoid adverse effects on product production due to special circumstances.

[0099] Reference Figure 5The diagram illustrates a flowchart of a control method for a semiconductor process apparatus according to an embodiment of the present invention. The semiconductor process apparatus includes: a process chamber, and a pressure detection module communicating with the process chamber. The method may specifically include the following steps:

[0100] Step 401: Obtain a preset process formula for the workpiece in the process chamber to perform the process task; the preset process formula includes process temperature, process time and process pressure.

[0101] Step 402: When the process temperature in the preset process formula is greater than or equal to the preset temperature, obtain the atmospheric pressure detected by the pressure detection module.

[0102] In one embodiment, the pressure detection module includes a pressure sensor, a first valve, and a second valve; one end of the first valve is connected to the transmission pipe, and the other end is connected to the pressure sensor; one end of the second valve is connected to both the first valve and the pressure sensor, and the other end is connected to the atmosphere.

[0103] The step of obtaining the atmospheric pressure detected by the pressure detection module before the start of the process task may further include: controlling the first valve to close and the second valve to open, and collecting the atmospheric pressure through the pressure sensor to obtain the atmospheric pressure.

[0104] Step 403: Determine the target pressure of the process task based on the preset pressure difference between the atmospheric pressure and the process temperature;

[0105] In one embodiment, the step of determining the target pressure of the process task based on the preset pressure difference between the atmospheric pressure and the process temperature may further include: when the process temperature in the preset process formula is greater than or equal to the preset temperature, using the difference between the atmospheric pressure and the preset pressure difference between the process temperature as the target pressure of the process task.

[0106] Step 404: Determine the target time of the process task based on the preset pressure difference; control the process devices in the process chamber to perform the process task according to the process temperature, the target pressure, and the target time;

[0107] In one embodiment, the step of determining the target time of the process task based on the preset pressure difference may further include the following sub-steps:

[0108] Sub-step S11: Obtain the pressure influence factor and the time influence factor;

[0109] Sub-step S12: Determine the target time difference based on the preset pressure difference, the pressure influence factor, the process time, and the time influence factor;

[0110] Sub-step S13: Determine the target time of the process task based on the process time and the target time difference.

[0111] Step 405, or, based on the preset pressure difference, determine the target temperature of the process task; control the process components in the process chamber to perform the process task according to the target temperature, the target pressure, and the process time.

[0112] In one embodiment, the step of determining the target temperature of the process task based on the preset pressure difference may further include the following sub-steps:

[0113] Sub-step S21: Obtain the pressure influence factor and temperature influence factor;

[0114] Sub-step S22: Determine the target temperature difference based on the preset pressure difference, the pressure influence factor, the process temperature, and the temperature influence factor;

[0115] Sub-step S23: Determine the target temperature of the process task based on the difference between the process temperature and the target temperature.

[0116] In one embodiment, the method may further include: when the target temperature difference is greater than a preset temperature range, or the target pressure difference is greater than a preset pressure range, or the target time difference is greater than a preset time range, outputting an alarm message and suspending the process task.

[0117] In one embodiment, the method may further include: when the process temperature in the preset process formula is lower than the preset temperature, using the process pressure in the preset process formula as the target pressure and the process time in the preset process formula as the target time; controlling the workpiece in the process chamber to perform the process task according to the process temperature, the target pressure and the target time.

[0118] In one embodiment, the semiconductor process equipment further includes a transfer tube and a pressure control valve disposed on the transfer tube. The step of controlling the workpiece in the process chamber to perform the process task according to the process temperature, the target pressure, and the target time may further include the following sub-steps:

[0119] Sub-step S31: Obtain the gas pressure in the process chamber detected by the pressure detection module during the process task;

[0120] Sub-step S32: Adjust the opening of the pressure control valve according to the gas pressure in the process chamber to adjust the gas pressure in the process chamber to the target pressure.

[0121] In one embodiment, the pressure detection module includes a pressure sensor, a first valve, and a second valve; one end of the first valve is connected to the transmission pipe, and the other end is connected to the pressure sensor; one end of the second valve is connected to both the first valve and the pressure sensor, and the other end is used to communicate with the outside; the step of obtaining the atmospheric pressure detected by the pressure detection module before the start of the process task may further include the following sub-steps:

[0122] Before the process begins, the first valve is closed and the second valve is opened, and the atmospheric pressure is detected by the pressure sensor.

[0123] The step of obtaining the gas pressure in the process chamber detected by the pressure detection module during the process task may further include the following sub-steps:

[0124] During the process, the first valve is opened and the second valve is closed, and the gas pressure in the process chamber is detected by the pressure sensor.

[0125] In one embodiment, the transmission pipe includes a first transmission pipe, a second transmission pipe, and a third transmission pipe connected to each other. One end of the first transmission pipe is connected to one end of the second transmission pipe and one end of the third transmission pipe, respectively. The other end of the first transmission pipe is connected to the process chamber. One end of the first valve of the pressure detection module is connected to the first transmission pipe. The pressure control valve is disposed in the second transmission pipe.

[0126] The semiconductor process equipment further includes a condensation module disposed in the second transmission tube. The condensation module is disposed between the pressure control valve and the connection between the second transmission tube and the first transmission tube. The condensation module is used to cool the gas transmitted to the second transmission tube via the first transmission tube. The third transmission tube is used to discharge the liquid liquefied by the condensation module.

[0127] Reference Figure 6 The diagram illustrates a logic diagram of a control method for semiconductor process equipment provided by an embodiment of the present invention. To enable those skilled in the art to better understand the embodiments of the present invention, the following explanation is provided... Figure 6 The embodiments of the present invention are described below:

[0128] (1) Obtain the preset process formula; the preset process formula includes process temperature, process time and process pressure;

[0129] (2) Determine whether the process temperature is greater than or equal to the preset temperature;

[0130] (3) If the process temperature in the preset process formula is greater than or equal to the preset temperature, then the relative pressure control mode is used;

[0131] (4) In relative pressure control mode, atmospheric pressure is detected by pressure detection module;

[0132] (5) Determine the target pressure for the process task based on atmospheric pressure;

[0133] (6) Determine the target time of the process task based on the target pressure of the process task;

[0134] (7) Determine whether the difference between the target pressure and the process pressure exceeds the preset pressure range, and whether the difference between the target time and the process time exceeds the preset time range.

[0135] (8) If the difference between the target pressure and the process pressure exceeds the preset pressure range, or the difference between the target time and the process time exceeds the preset time range, an alarm message will be output and the process task will be suspended.

[0136] (9) Technicians determine whether the process parameters determined based on the target pressure and target time are suitable for carrying out the process task;

[0137] (10) If the technician determines that the process task cannot be performed, the process task shall be terminated.

[0138] (11) If the technicians determine that the process task can be carried out, the process task shall be carried out according to the process temperature, target pressure and target time.

[0139] (12) If the process temperature in the preset process formula is lower than the preset temperature, then the absolute pressure control mode is used.

[0140] (13) In the absolute pressure control mode, the process pressure in the preset process formula is taken as the target pressure, and the process time in the preset process formula is taken as the target time.

[0141] (14) Perform process tasks according to process temperature, target pressure and target time.

[0142] As the method embodiments are basically similar to the device embodiments, the description is relatively simple, and relevant parts can be referred to in the description of the device embodiments.

[0143] It should be noted that, for the sake of simplicity, the method embodiments are all described as a series of actions. However, those skilled in the art should understand that the embodiments of the present invention are not limited to the described order of actions, because according to the embodiments of the present invention, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions involved are not necessarily essential to the embodiments of the present invention.

[0144] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0145] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, embodiments of the present invention can take the form of entirely hardware embodiments, entirely software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present invention can take the form of computer program products embodied on one or more machine-readable media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0146] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0147] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing terminal device to operate in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0148] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal equipment, causing a series of operational steps to be performed on the computer or other programmable terminal equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable terminal equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0149] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0150] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0151] The above provides a detailed description of a semiconductor process equipment and a control method for the semiconductor process equipment provided by the present invention. Specific examples have been used to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A semiconductor process apparatus, characterized in that, include: A process chamber, a pressure detection module connected to the process chamber, and a control module; The pressure detection module is used to detect atmospheric pressure before the start of the process task; The control module is used to acquire a preset process formula for the workpiece in the process chamber to perform a process task; The preset process formula includes process temperature, process time and process pressure; When the process temperature in the preset process formula is greater than or equal to the preset temperature, the atmospheric pressure detected by the pressure detection module is obtained; The target pressure for the process task is determined based on the preset pressure difference between the atmospheric pressure and the process temperature. The target time for the process task is determined based on the preset pressure difference; Control the process devices in the process chamber to perform process tasks according to the process temperature, the target pressure, and the target time; Alternatively, the target temperature of the process task can be determined based on the preset pressure difference; the process components in the process chamber can be controlled to perform the process task according to the target temperature, the target pressure, and the process time.

2. The semiconductor process equipment according to claim 1, characterized in that, It also includes a transmission pipe and a pressure control valve disposed on the transmission pipe; The pressure detection module is also used to detect the gas pressure in the process chamber during the process task; The control module is used to acquire the gas pressure in the process chamber detected by the pressure detection module; and adjust the opening of the pressure control valve according to the gas pressure in the process chamber to adjust the gas pressure in the process chamber to the target pressure.

3. The semiconductor process equipment according to claim 2, characterized in that, The pressure detection module includes a pressure sensor, a first valve, and a second valve; one end of the first valve is connected to the transmission pipe, and the other end is connected to the pressure sensor; one end of the second valve is connected to both the first valve and the pressure sensor, and the other end is used to communicate with the outside. The pressure detection module is used to control the first valve to close and the second valve to open, and to detect the atmospheric pressure through the pressure sensor; or it is used to control the first valve to open and the second valve to close, and to detect the gas pressure in the process chamber through the pressure sensor.

4. The semiconductor process equipment according to claim 3, characterized in that, The transmission pipe includes a first transmission pipe, a second transmission pipe, and a third transmission pipe connected to each other. One end of the first transmission pipe is connected to one end of the second transmission pipe and one end of the third transmission pipe, respectively. The other end of the first transmission pipe is connected to the process chamber. One end of the first valve of the pressure detection module is connected to the first transmission pipe. The pressure control valve is located in the second transmission pipe. The semiconductor process equipment further includes a condensation module disposed in the second transmission tube. The condensation module is disposed between the pressure control valve and the connection between the second transmission tube and the first transmission tube. The condensation module is used to cool the gas transmitted to the second transmission tube via the first transmission tube. The third transmission tube is used to discharge the liquid liquefied by the condensation module.

5. The semiconductor process equipment according to claim 1, characterized in that, The control module is used to take the difference between the atmospheric pressure and the preset pressure difference corresponding to the process temperature as the target pressure of the process task when the process temperature in the preset process formula is greater than or equal to the preset temperature.

6. The semiconductor process equipment according to claim 1, characterized in that, The control module is used to acquire pressure influence factors and time influence factors; determine a target time difference based on the preset pressure difference, the pressure influence factors, the process time, and the time influence factors; and determine the target time of the process task based on the process time and the target time difference.

7. The semiconductor process equipment according to claim 1, characterized in that, The control module is used to acquire pressure influence factors and temperature influence factors; determine a target temperature difference based on the preset pressure difference, the pressure influence factors, the process temperature, and the temperature influence factors; and determine the target temperature of the process task based on the process temperature and the target temperature difference.

8. The semiconductor process equipment according to claim 6 or 7, characterized in that, The control module is also used to output alarm information and suspend the process task when the target temperature difference is greater than a preset temperature range, the target pressure difference is greater than a preset pressure range, or the target time difference is greater than a preset time range.

9. The semiconductor process equipment according to claim 1, characterized in that, The control module is further configured to, when the process temperature in the preset process formula is lower than the preset temperature, use the process pressure in the preset process formula as the target pressure and the process time in the preset process formula as the target time. The workpiece in the process chamber is controlled to perform the process task according to the process temperature, the target pressure, and the target time.

10. A control method for semiconductor process equipment, characterized in that, The semiconductor process equipment includes: a process chamber, and a pressure detection module communicating with the process chamber; the method includes: A preset process formula for the workpiece in the process chamber to perform a process task is obtained; the preset process formula includes process temperature, process time and process pressure. When the process temperature in the preset process formula is greater than or equal to the preset temperature, the atmospheric pressure detected by the pressure detection module before the start of the process task is obtained. The target pressure for the process task is determined based on the preset pressure difference between the atmospheric pressure and the process temperature. Based on the preset pressure difference, the target time for the process task is determined; the process components in the process chamber are controlled to perform the process task according to the process temperature, the target pressure, and the target time; or... Based on the preset pressure difference, the target temperature of the process task is determined; the process components in the process chamber are controlled to perform the process task according to the target temperature, the target pressure, and the process time.

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