Preparation method of glass-based packaging antenna

Abstract

The invention discloses a preparation method of a glass-based packaging antenna, and belongs to the technical field of semiconductor packaging. The method comprises the following steps: providing an upper-layer glass substrate and a lower-layer glass substrate; forming alignment marks on the lower surface of the upper-layer substrate through laser guiding and acid solution etching in sequence; forming a glass blind hole in the lower substrate by adopting an acid-base composite etching process and carrying out metallization filling; thinning the lower-layer substrate, and forming a first rewiring layer and a second rewiring layer on the surfaces of the upper-layer substrate and the lower-layer substrate respectively by taking the alignment mark and the metalized TGV as references; and finally, aligning and bonding the two layers of substrates through the bonding layer, and realizing accurate alignment of the upper and lower RDLs by using the alignment marks and the TGV. Through an innovative alignment mark manufacturing process and a TGV composite etching process, the problems that in the prior art, the alignment precision of upper and lower RDLs is insufficient, and TGV preparation efficiency and structure quality are difficult to consider at the same time are effectively solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor packaging, in particular to a preparation method of a glass-based packaged antenna. BACKGROUND

[0002] With the evolution from 5G to 6G, high-frequency communication technologies such as millimeter wave and terahertz are rapidly developing, which puts forward strict requirements on the integration density, signal transmission efficiency and structural stability of packaged antennas. Glass substrates have become the preferred substrate material for high-density packaged antennas due to their excellent electrical and thermal properties.

[0003] In the preparation of a glass-based packaged antenna, the accurate alignment of the lower surface re-distribution layer (RDL) and the high-quality preparation of the through glass via (TGV) are two key processes that directly determine the performance and reliability of the antenna. However, the existing technology still has significant deficiencies in these two aspects: (1) Deficiency of lower surface RDL alignment process. Currently, the industry generally uses the back-to-back exposure function of a photoetching machine to make the lower surface RDL pattern in two steps. The alignment accuracy of this process is easily disturbed by factors such as the limit of the photoetching machine, substrate thickness deviation and surface roughness, leading to alignment deviation, which may in turn cause circuit open, short circuit or signal crosstalk. To compensate for the deviation, complex pre-alignment or calibration steps are often needed, resulting in complex process, high cost and increased yield risk.

[0004] (2) Deficiency of TGV preparation process. The mainstream TGV preparation process is "laser pretreatment + single etching" (such as single acid or alkaline etching). This process cannot balance the preparation efficiency and structure quality: alkaline etching has a fast etching rate but poor selectivity, resulting in rough TGV wall surface and insufficient perpendicularity; acid etching can improve the wall surface quality, but has a slow etching rate and easily leads to size deviation of the upper and lower openings. The single etching process not only has low production efficiency, but also has deficiencies in impedance matching performance and structural reliability of the prepared TGV.

[0005] Therefore, in the existing technology, the problems of insufficient alignment accuracy of the lower surface RDL and the difficulty in balancing the preparation efficiency and structure quality of the TGV have become key bottlenecks restricting the performance improvement and large-scale application of glass-based packaged antennas. SUMMARY

[0006] In view of the above problems, the present application provides a preparation method of a glass-based packaged antenna to solve the technical problems of insufficient alignment accuracy of the upper and lower re-distribution layers (RDLs) and the difficulty in balancing the preparation efficiency and structure quality of the through glass via (TGV) in the existing preparation method of a glass-based packaged antenna.

[0007] To solve the above problems, the present application provides a preparation method of a glass-based packaged antenna, comprising the following steps: S1: Provides a lower glass substrate and an upper glass substrate; S2: On the upper glass substrate, a mirror alignment mark is simultaneously formed on the lower surface of the upper glass substrate by laser guidance and acidic solution etching; S3: A glass blind hole is formed on the lower glass substrate, and the glass blind hole is metallized and filled. The glass blind hole is formed by an acid-base composite etching process, which specifically includes: first etching with an alkaline etching solution to form a blind hole prototype, and then etching with an acidic etching solution to repair the sidewall of the blind hole. S4: Thin the lower glass substrate until the glass blind hole penetrates the lower surface of the lower glass substrate to obtain a through glass hole. Using the alignment mark as a reference, form a first redistribution layer on the lower surface of the upper glass substrate. S5: Based on the through-glass via after metallization filling, a second redistribution layer is formed on the upper surface of the lower glass substrate. S6: Align and bond the upper glass substrate and the lower glass substrate through a bonding layer, wherein the first redistribution layer and the second redistribution layer are aligned through the alignment mark and the through-glass via.

[0008] Furthermore, in step S2, the formation of the alignment mark specifically includes the following steps: First, a laser is used to create holes at a predetermined position on the upper glass substrate. Then, an acidic etching solution based on hydrofluoric acid is used to etch the laser-drilled area, simultaneously forming mirror-aligned holes on the lower surface of the upper glass substrate.

[0009] Furthermore, the sidewall roughness of the mirror alignment hole is less than 0.5 μm.

[0010] Furthermore, in step S3, the first etching using an alkaline etching solution to form a blind hole prototype, followed by a second etching using an acidic etching solution to refine the blind hole sidewalls, specifically includes: S31: A laser is used to pre-process the lower glass substrate at a predetermined position to form an etching guide path; S32: The first etching is performed using an alkaline etching solution to form the initial shape of the blind hole; S33: A second etching is performed using an acidic etching solution to refine the sidewalls of the blind hole prototype and control its opening size.

[0011] Furthermore, the alkaline etching solution is a potassium hydroxide solution, and the diameter of the blind hole prototype is 30 μm to 50 μm; the acidic etching solution is a hydrofluoric acid solution, and the size of the repaired blind hole sidewall is increased by 5 μm to 15 μm based on the diameter of the blind hole prototype.

[0012] Furthermore, the sum of the depths of the first etching and the second etching is 200-250 μm.

[0013] Furthermore, before thinning the lower glass substrate, the following steps are also included: A titanium barrier layer is formed on the upper surface of the lower glass substrate; A first temporary carrier plate is bonded to the titanium barrier layer.

[0014] Furthermore, after forming the second redistribution layer and before performing the alignment bonding, the following steps are also included: A second temporary carrier is bonded to the lower surface of the lower glass substrate having the second redistribution layer. The first temporary carrier plate and the titanium barrier layer are removed by laser debonding.

[0015] Furthermore, the processes for forming the first redistribution layer and the second redistribution layer both include: physical vapor deposition, photolithography, electroplating, resist stripping, and etching.

[0016] Furthermore, the bonding layer is a photolithographically patternable bonding adhesive layer, which is formed on the lower surface of the upper glass substrate by a photolithography process.

[0017] Unlike existing technologies, this invention provides a method for fabricating a glass-based packaged antenna, belonging to the field of semiconductor packaging technology. The method includes: providing upper and lower glass substrates; simultaneously forming mirror alignment marks on the lower surface of the upper glass substrate using laser guidance and acidic solution etching; metallizing and filling the glass blind holes on the lower substrate using an acid-base composite etching process, wherein the composite etching is a two-step etching process of first alkaline and then acidic; thinning the lower glass substrate; forming a first and second redistribution layer (RDL) on the surfaces of the upper and lower substrates respectively, based on the alignment marks and the metallized TGV; and finally aligning and bonding the two substrates using a bonding layer, achieving precise alignment of the upper and lower RDLs using the alignment marks and TGV. This invention, through its innovative alignment mark fabrication process and TGV composite etching process, effectively solves the problems of insufficient alignment accuracy of the upper and lower RDLs and the difficulty in balancing TGV fabrication efficiency and structural quality in existing technologies, thereby improving the signal transmission performance, reliability, and production efficiency of the glass-based packaged antenna.

[0018] The above description of the invention is merely an overview of the technical solution of this application. In order to enable those skilled in the art to better understand the technical solution of this application and to implement it based on the description and drawings, and to make the above-mentioned objectives and other objectives, features and advantages of this application easier to understand, the following description is provided in conjunction with the specific embodiments and drawings of this application. Attached Figure Description

[0019] The accompanying drawings are only used to illustrate the principles, implementation methods, applications, features, and effects of specific embodiments of the present invention and other related contents, and should not be considered as limitations on this application.

[0020] In the accompanying drawings of the instruction manual: Figure 1 This is a flowchart illustrating a method for fabricating a glass-based packaged antenna according to a first exemplary embodiment of this application. Figure 2 This is a flowchart illustrating a method for fabricating a glass-based packaged antenna according to a second exemplary embodiment of this application. Figure 3 This is a flowchart illustrating a method for fabricating a glass-based packaged antenna according to a third exemplary embodiment of this application. Figure 4 This is a flowchart illustrating the fabrication method of a glass-based packaged antenna according to the fourth exemplary embodiment of this application. Figure 5 This is a cross-sectional view of a glass-based packaged antenna according to an exemplary embodiment of a specific implementation of this application; Figure 6 This is a schematic diagram of the structure of a glass-based packaged antenna according to an exemplary embodiment of a specific implementation of this application; Figure 7 This is an overall flowchart and a corresponding product schematic diagram of the fabrication method of a glass-based packaged antenna according to an exemplary embodiment of this application. Figure 8 This is a schematic diagram illustrating the distribution of alignment markers in an exemplary embodiment of a specific implementation of this application; Figure 9 This is a finished product diagram of the glass-based packaged antenna according to a specific embodiment of this application. Detailed Implementation

[0021] To illustrate the possible application scenarios, technical principles, implementable specific solutions, and achievable objectives and effects of this application in detail, the following description, in conjunction with the listed specific embodiments and accompanying drawings, provides a detailed explanation. The embodiments described herein are merely illustrative of the technical solutions of this application and are therefore intended to limit the scope of protection of this application.

[0022] In this document, the term "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The term "embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment, nor does it specifically limit its independence or connection with other embodiments. In principle, in this application, as long as there are no technical contradictions or conflicts, the technical features mentioned in each embodiment can be combined in any way to form corresponding implementable technical solutions.

[0023] Unless otherwise defined, the technical terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the use of related terms herein is merely for the purpose of describing particular embodiments and is not intended to limit this application.

[0024] In the description of this application, the term "and / or" is used to describe the logical relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A exists, B exists, and A and B exist simultaneously. Additionally, the character " / " in this document generally indicates that the preceding and following objects have an "or" logical relationship.

[0025] In this application, terms such as “first” and “second” are used only to distinguish one entity or operation from another, and do not necessarily require or imply any actual quantity, hierarchy or order relationship between these entities or operations.

[0026] Without further limitations, the use of terms such as “comprising,” “including,” “having,” or other similar open-ended expressions in this application is intended to cover non-exclusive inclusion, which does not exclude the presence of additional elements in a process, method, or product that includes the stated elements, such that a process, method, or product that includes a list of elements may include not only those defined elements but also other elements not expressly listed, or elements inherent to such a process, method, or product.

[0027] As understood in the Examination Guidelines, in this application, expressions such as "greater than," "less than," and "exceeding" are understood to exclude the stated number; expressions such as "above," "below," and "within" are understood to include the stated number. Furthermore, in the description of the embodiments in this application, "multiple" means two or more (including two), and similar expressions related to "multiple" are also understood in this way, such as "multiple groups" and "multiple times," unless otherwise explicitly specified.

[0028] In the description of the embodiments of this application, the space-related expressions used, such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "vertical," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," indicate the orientation or positional relationship based on the orientation or positional relationship shown in the specific embodiments or drawings. They are only for the purpose of describing the specific embodiments of this application or for the reader's understanding, and do not indicate or imply that the device or component referred to must have a specific position, a specific orientation, or be constructed or operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0029] The processor described in the embodiments of this application can be implemented by hardware, firmware, software, or a combination thereof. It can be a circuit, one or more of an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field-programmable gate array (FPGA), a central processing unit (CPU), a controller, a microcontroller, or a microprocessor. It also includes other physical, biological, or chemical structures that can implement the same or equivalent functions as the processors listed above, such as biological neurons, quantum computing units, DNA computing units, etc., so that the processor can execute some or all of the steps in the computer program or method involved in the various embodiments of this application, or any combination of the steps mentioned therein.

[0030] Please see Figure 1 In a first aspect, this application provides a method for fabricating a glass-based packaged antenna, comprising the following steps: S1: Provides a lower glass substrate and an upper glass substrate; S2: On the upper glass substrate, a mirror alignment mark is simultaneously formed on the lower surface of the upper glass substrate by laser guidance and acidic solution etching; S3: A glass blind hole is formed on the lower glass substrate, and the glass blind hole is metallized and filled. The glass blind hole is formed by an acid-base composite etching process, which specifically includes: first etching with an alkaline etching solution to form a blind hole prototype, and then etching with an acidic etching solution to repair the sidewall of the blind hole. S4: Thin the lower glass substrate until the glass blind hole penetrates the lower surface of the lower glass substrate to obtain a through glass hole. Using the alignment mark as a reference, form a first redistribution layer on the lower surface of the upper glass substrate. S5: Based on the through-glass via after metallization filling, a second redistribution layer is formed on the upper surface of the lower glass substrate. S6: Align and bond the upper glass substrate and the lower glass substrate through a bonding layer, wherein the first redistribution layer and the second redistribution layer are aligned through the alignment mark and the through-glass via.

[0031] In this embodiment, both the lower and upper glass substrates are made of quartz glass with an initial thickness of 700 μm. They possess low dielectric constant (εr≈4~6), low dielectric loss tangent (tanδ<0.001), high thermal stability, and excellent insulation performance, making them preferred substrate materials for high-density packaged antennas and meeting the basic requirements of high-frequency communication for signal transmission.

[0032] Alignment marks are marking structures formed on the lower glass substrate for precise positioning. Specifically, they are mirror alignment holes, which serve as a reference for subsequent alignment and bonding of the upper and lower glass substrates and the fabrication of redistribution layers, ensuring that the positions of each layer are precisely matched.

[0033] Through-Glass Vias (TGVs) are the core structure for vertical signal transmission between upper and lower glass substrates. They must meet the 50-ohm standard impedance matching requirement in high-frequency communication. The consistency of the upper and lower opening sizes, the smoothness of the wall surface, and the perpendicularity directly affect the signal transmission quality.

[0034] Acid-base composite etching process is a combined etching technology. First, an alkaline etching solution is used to quickly form the prototype of the blind hole, and then an acidic etching solution is used to refine the sidewall of the blind hole and precisely control the opening size, thus balancing etching efficiency and blind hole quality.

[0035] The first redistribution layer (RDL) refers to a metal wiring structure formed on the lower surface of the upper glass substrate, used to realize signal interconnection between related devices in the upper layer and the lower layer structure.

[0036] The second redistribution layer (RDL) refers to the metal wiring structure formed on the upper surface of the lower glass substrate. It works in conjunction with the first redistribution layer to complete the signal transmission between the chip and the antenna unit, and between the antenna units.

[0037] The bonding layer refers to a photolithographically patternable bonding adhesive layer used to achieve a stable connection between the upper and lower glass substrates, while ensuring the insulation performance and structural stability of the connection area.

[0038] In step S1, quartz glass that meets the requirements of high-frequency communication is selected as the lower glass substrate and the upper glass substrate. The initial thickness of both is set to 700μm. This thickness facilitates subsequent processing operations and allows for a margin for subsequent thinning, ensuring the structural strength of the substrate.

[0039] In step S2, a mirror alignment mark is simultaneously formed on the lower surface of the upper glass substrate using laser guidance and acidic solution etching. Specifically, the laser first makes a precise opening to guide the subsequent etching. Then, the acidic etching solution etches the opening area to form a mirror alignment hole that meets the accuracy requirements. This process does not require additional pre-alignment mark fabrication or other processes, simplifying the process while ensuring the accuracy of the alignment mark.

[0040] In step S3, the acidic etching solution exhibits significant technical advantages. Its fast etching rate effectively improves overall process efficiency, and it has broad adaptability to glass composition, compatible with various types of glass substrates. Simultaneously, it ensures low roughness on the blind via sidewalls and bottom, imparting excellent surface quality to the blind vias. The alkaline etching solution (KOH / NaOH system) demonstrates unique application value. It not only achieves good sidewall perpendicularity, contributing to a regular straight-hole structure, but also exhibits high selectivity for metal masks, reducing mask wear during etching, and offers higher operational safety with relatively mild corrosiveness.

[0041] This invention employs a composite etching process of alkaline followed by acid etching, fully integrating the advantages of two single etching processes to achieve synergistic optimization of technical effects: alkaline etching lays a good foundation for the perpendicularity of blind vias, followed by acid etching to correct surface defects, ensuring both the via shape accuracy and surface quality; acid etching can quickly remove burrs and grain boundary damage generated by alkaline etching, further improving the surface finish of blind vias; the high mask selectivity of alkaline etching reduces mask loss in earlier processes, while the high-speed shaping characteristics of acid etching optimize overall process efficiency and significantly shorten the process cycle; the complementary application of the two processes effectively compensates for the limitations of single processes, reduces the requirements for extreme process parameters, and significantly improves process stability; at the same time, it can precisely control the aspect ratio and aperture size of blind vias, ensuring that blind vias meet the stringent requirements of high-precision glass-based packaging, providing a reliable structural foundation for subsequent metallization filling and redistribution layer interconnection.

[0042] In step S4, the lower glass substrate is first thinned. Then, using the alignment marks on the upper glass substrate as a reference, a first redistribution layer is formed on the upper surface of the lower glass substrate through processes such as physical vapor deposition (PVD), photolithography, electroplating, resist removal, and etching. The accuracy of the alignment marks ensures the positional precision of the first redistribution layer, laying the foundation for precise docking with the second redistribution layer in the future.

[0043] In step S5, using the metallized through-glass via as a reference, a second redistribution layer is formed on the upper surface of the lower glass substrate using physical vapor deposition, photolithography, electroplating, resist removal, and etching processes. The precise positioning of the through-glass via ensures the positional correspondence between the second and first redistribution layers, guaranteeing the reliability of signal interconnection.

[0044] In step S6, the upper glass substrate and the lower glass substrate are aligned and bonded through the bonding layer. At this time, the first redistribution layer and the second redistribution layer are precisely aligned through the alignment marks and through-glass vias to ensure that the signal interconnection between the chip and the antenna unit and between the antenna units is accurate and error-free, and to reduce signal transmission loss.

[0045] The above solution uses laser guidance and acidic solution etching to simultaneously form mirror alignment marks on the lower surface of the upper glass substrate. Compared with the traditional back-to-back exposure process of photolithography, it does not require additional processes such as pre-alignment mark production and multiple calibration exposures. While simplifying the process and reducing production costs, it significantly improves the alignment accuracy of the lower surface redistribution layer, effectively avoiding problems such as line open circuits, short circuits or signal crosstalk caused by alignment deviations, and ensuring antenna performance.

[0046] The glass blind via employs an acid-base composite etching process, which solves the problem of inconsistent opening and wall quality that cannot be simultaneously addressed in the traditional "laser pretreatment + single etching" process. This improves the perpendicularity of the glass blind via, enabling more precise matching of the 50-ohm impedance requirement, reducing signal reflection, and enhancing signal transmission efficiency. The overall process design is reasonable, with each step working closely together to ensure the integration density, signal transmission efficiency, impedance matching accuracy, and structural stability of the glass-based packaged antenna. This adapts to the development needs of high-frequency communication technology and meets the requirements of large-scale mass production, breaking through the bottleneck of existing technologies in the large-scale application of high-frequency communication.

[0047] In some embodiments, step S2, the formation of the alignment mark specifically includes the following steps: First, a laser is used to create holes at a predetermined position on the upper glass substrate. Then, an acidic etching solution based on hydrofluoric acid is used to etch the laser-drilled area, simultaneously forming mirror-aligned holes on the lower surface of the upper glass substrate.

[0048] Laser aperture refers to the use of the high energy and high precision of lasers to create holes at predetermined positions on the upper glass substrate, providing a precise guiding area for subsequent etching. The position of the aperture is determined by the design and layout of the packaged antenna to ensure that the alignment marks can accurately match the subsequent alignment requirements.

[0049] Hydrofluoric acid-based acid etching solutions are etching solutions with hydrofluoric acid as the main component. They have good etching selectivity and etching effect, and can effectively etch glass materials. At the same time, the etching degree can be precisely controlled to ensure the dimensional accuracy and surface quality of the alignment marks. It is a commonly used type of high-efficiency etching solution in the etching of glass-based materials.

[0050] Mirror alignment holes refer to the specific implementation of alignment marks. They are hole-shaped marks with a mirror structure. Their shape, size and distribution are precisely designed to form a precise alignment with the blind holes in the metallized glass, ensuring the precise docking of the upper and lower rewiring layers. It is the core marking structure for achieving overall structural alignment.

[0051] Specifically, in this embodiment, the preset position of the alignment mark on the upper glass substrate is first determined according to the overall design scheme of the glass-based packaged antenna. This position needs to be able to accurately match the bonding alignment requirements of the upper and lower glass substrates and the interconnection alignment requirements of the upper and lower rewiring layers. It is usually set at the edge of the substrate or a specific alignment area.

[0052] Laser equipment is used to create holes at predetermined locations on the upper glass substrate. The laser beam is focused at the predetermined location, and its high energy causes the glass material to melt and vaporize instantly, forming the initial hole structure. Laser drilling is characterized by precise positioning and high efficiency, and can quickly form holes that meet the initial size requirements, laying the foundation for subsequent etching processes.

[0053] The above-mentioned method, which combines laser drilling and acid etching simultaneously, reduces the number of steps, shortens the production cycle, and lowers the process cost compared to the traditional step-by-step process of creating alignment marks. At the same time, it avoids secondary positioning deviations that may occur in step-by-step operations, and significantly improves the formation accuracy of alignment marks.

[0054] The use of hydrofluoric acid-based acid etching solution can precisely refine the initial hole structure formed by laser drilling, effectively reduce the sidewall roughness of mirror-aligned holes, improve the dimensional accuracy and shape regularity of holes, and ensure that they can achieve high-precision alignment with the metallized and filled glass blind holes, providing a reliable guarantee for the precise interconnection of upper and lower rewiring layers.

[0055] The formation process of mirror alignment holes is simple and efficient, requiring no complex equipment or cumbersome processes, making it suitable for large-scale production needs. At the same time, its precise positioning performance can effectively improve the overall yield of glass-based packaged antennas and reduce product scrap due to alignment deviations.

[0056] Preferably, the sidewall roughness of the mirror alignment hole is less than 0.5 μm.

[0057] Sidewall roughness refers to the roughness of the inner wall of a mirror-aligned hole, measured using Ra (arithmetic mean deviation), which is the arithmetic mean of the absolute values ​​of the profile deviations over a certain sampling length. This index directly reflects the smoothness of the hole wall and is one of the important parameters for evaluating the quality of alignment marks.

[0058] The roughness of the mirror alignment hole sidewall is less than 0.5μm, which can effectively reduce the positioning error caused by the roughness of the hole wall during the alignment process. This ensures that the upper and lower glass substrates are aligned with high precision through the alignment marks and glass blind holes, improves the interconnection accuracy of the upper and lower rewiring layers, reduces signal transmission loss, and ensures the signal transmission quality and radiation efficiency of the antenna.

[0059] In some embodiments, in step S3, such as Figure 2 As shown, the process of first etching with an alkaline etching solution to form a blind hole prototype, and then etching with an acidic etching solution to refine the sidewalls of the blind hole, specifically includes: S31: A laser is used to pre-process the lower glass substrate at a predetermined position to form an etching guide path; S32: The first etching is performed using an alkaline etching solution to form the initial shape of the blind hole; S33: A second etching is performed using an acidic etching solution to refine the sidewalls of the blind hole prototype and control its opening size.

[0060] In this embodiment, the etching guide path refers to the micro-cracks or trench structures formed at a preset position on the lower glass substrate through laser pretreatment. Its function is to provide a clear etching direction and starting position for subsequent alkaline etching, guide the etching solution to etch quickly and accurately, avoid etching offset or irregular etching during the etching process, and ensure the positional accuracy of blind holes.

[0061] The prototype of a blind hole refers to the preliminary blind hole structure formed after alkaline etching. It has the basic shape and approximate size of a blind hole, but due to the poor selectivity of the alkaline etching solution, its sidewalls are relatively rough, and the verticality and opening size accuracy have not yet met the requirements. It needs to be further refined by subsequent acid etching.

[0062] The first etching stage, namely alkaline etching, is the first etching process for creating blind holes in glass. Using alkaline etching solution can not only achieve good sidewall perpendicularity and help obtain a regular straight hole structure, but also has high selectivity for metal masks, which can reduce mask wear during the etching process.

[0063] The second etching stage, namely the acid etching stage, is a fine processing step for opening glass blind holes. The acid etching solution can quickly remove burrs and grain boundary damage caused by alkaline etching, further improving the smoothness of the through holes.

[0064] In step S33, the process of acid etching to trim the sidewalls and control the opening size is as follows: After alkaline etching, the lower glass substrate is transferred to an acidic etching solution for a second etching. The acidic etching solution can uniformly etch the rough sidewalls of the blind hole prototype, removing burrs, cracks, and other defects on the sidewalls, reducing the sidewall roughness, and precisely controlling the opening size of the blind hole. This ensures that the consistency of the upper and lower opening sizes, the smoothness of the wall surface, and the perpendicularity of the blind hole all meet the design requirements, ensuring that it can achieve a 50-ohm standard impedance matching.

[0065] The above solution provides precise guidance for subsequent etching processes through the etching guide path formed by laser preprocessing, avoiding the offset problem during the etching process, significantly improving the positional accuracy of glass blind holes, ensuring their precise matching with the alignment marks, and laying a good foundation for the interconnection of upper and lower rewiring layers.

[0066] The combined etching process, employing alkaline etching followed by acidic etching, effectively overcomes the limitations of single-process methods, reduces the reliance on extreme process parameters, and significantly improves process stability. Simultaneously, it allows for precise control of the via aspect ratio and aperture size, ensuring that the vias meet the stringent requirements of high-precision glass-based packaging, providing a reliable structural foundation for subsequent metallization filling and redistribution layer interconnection. In some embodiments, In some embodiments, the alkaline etching solution is a potassium hydroxide solution, and the diameter of the blind hole prototype is 30 μm to 50 μm; the acidic etching solution is a hydrofluoric acid solution, and the dimension of the repaired blind hole sidewall is increased by 5 μm to 15 μm based on the diameter of the blind hole prototype. The sum of the depths of the first etching and the second etching is 200-250 μm.

[0067] By clearly defining the type of etching solution and the range of etching depth, the process parameters are standardized and regulated, which facilitates precise control and quality control during the production process, improves the consistency and stability of the products, reduces product quality differences caused by fluctuations in process parameters, provides reliable process assurance for large-scale mass production, and also reduces debugging costs and quality risks during the production process.

[0068] In some embodiments, such as Figure 3 As shown, before the lower glass substrate is thinned, the following steps are also included: S41: A titanium barrier layer is formed on the upper surface of the lower glass substrate; S42: Bond a first temporary carrier plate onto the titanium barrier layer.

[0069] In this embodiment, the titanium barrier layer refers to a 1 μm thick titanium film layer formed on the upper surface of the lower glass substrate using a physical vapor deposition (PVD) process. Titanium metal possesses excellent chemical stability and physical barrier properties. As a specially designed functional layer, its core function is to provide precise interface control for the subsequent laser debonding process, ensuring that the laser energy acts only on the upper temporary bonding layer, thereby achieving selective debonding.

[0070] The temporary support carrier, which bonds the first temporary carrier plate to the titanium barrier layer, is made of a material with certain structural strength, thermal stability, and good compatibility with the bonding material. Its dimensions are adapted to the underlying glass substrate, and it undertakes multiple protective and support functions in subsequent processes.

[0071] The thinning process employs precision grinding and polishing techniques to reduce the thickness of the lower glass substrate bonded with the first temporary carrier. The goal is to reduce the initial 700μm thickness of the lower glass substrate to 200μm to meet the overall structural design requirements of the glass-based packaged antenna and the performance demands of high-frequency communication applications.

[0072] After the blind vias in the glass are metallized and filled, the lower glass substrate is placed in a PVD (Physical Vapor Deposition) apparatus, and a 1 μm thick titanium barrier layer is deposited on its entire upper surface using physical vapor deposition. During the deposition process, parameters such as the vacuum level, deposition temperature, and sputtering power of the PVD chamber are strictly controlled to ensure that the titanium barrier layer has uniform thickness and good density, forming a stable bond with the glass substrate and the TGV-filled metal, providing a reliable interface foundation for subsequent laser debonding.

[0073] Selecting a suitable bonding material, the first temporary carrier is precisely bonded to the titanium barrier layer on the upper surface of the lower glass substrate. The core purpose of this step is to cope with the vacuum environment of the PVD cavity. If the metal filled by TGV is directly exposed to the vacuum cavity during the subsequent fabrication of the lower BM1 layer, it is prone to discharge reaction with the cavity, generating electric sparks or even explosions. The first temporary carrier can effectively isolate the metal from the cavity and avoid safety risks. At the same time, the temporary carrier provides solid support for the subsequent thinning process, preventing deformation or breakage of the glass substrate during the thinning process.

[0074] The lower glass substrate, with the first temporary carrier bonded to it, is then fixed on the worktable of a precision thinning machine. The lower surface of the substrate is gradually thinned using a combination of grinding and polishing processes. The substrate thickness is monitored in real time during the thinning process, and a segmented processing strategy is employed to control the thinning rate, preventing defects such as cracks and edge chipping caused by excessive processing stress. Ultimately, the lower glass substrate is precisely thinned to the target thickness of 200 μm, creating conditions for subsequent redistribution layer (RDL) fabrication and bonding of the upper and lower substrates.

[0075] The above solution achieves precise control of laser debonding by setting a titanium barrier layer, ensuring that the debonding process only acts on the upper temporary bonding layer and does not damage the lower glass substrate, TGV filler metal and the functional layer formed subsequently, thereby improving the controllability of the process and the product yield.

[0076] The first temporary carrier effectively solves the safety hazards caused by TGV filling metal in the vacuum PVD cavity, while providing stable support for the thinning process, significantly reducing the risk of glass substrate breakage during the thinning process and ensuring the structural integrity of the substrate.

[0077] By thinning the lower glass substrate to 200μm, the design requirements for a thinner and lighter packaged antenna are met, the signal transmission performance of the substrate is improved, the stringent requirements of high-frequency communication on the packaging structure are adapted, and suitable thickness matching conditions are provided for the bonding of the upper and lower substrates.

[0078] In some embodiments, such as Figure 4 As shown, after forming the second redistribution layer and before performing the alignment bonding, the following steps are also included: S51: A second temporary carrier is bonded to the lower surface of the lower glass substrate having the second redistribution layer. S52: Remove the first temporary carrier plate and the titanium barrier layer by laser debonding.

[0079] In this embodiment, the second temporary carrier refers to a temporary support carrier bonded to the lower surface of the underlying glass substrate (which has a second redistribution layer). Its material selection must consider structural strength, bonding compatibility, and ease of subsequent debonding. Its dimensions match the underlying glass substrate, primarily serving to provide structural reinforcement and functional protection during the permanent bonding process.

[0080] Laser debonding refers to the process of separating the first temporary carrier from the titanium barrier layer and the underlying glass substrate by irradiating the bonding interface between the titanium barrier layer and the first temporary carrier with a laser of a specific wavelength and power. This process utilizes the high energy and high directionality of lasers to cause physical or chemical changes (such as melting or decomposition) in the bonding materials. This results in high debonding efficiency and minimal damage to the substrate and functional layers.

[0081] Specifically, after the second redistribution layer is fabricated, a suitable bonding process is used to precisely bond the second temporary carrier to the lower surface of the lower glass substrate (the surface where the second RDL layer is located). This step has two core objectives: first, to increase the overall structural thickness during permanent bonding—the overall thickness of the upper and lower glass substrates after bonding is relatively thin (700+200μm), making them prone to breakage under the temperature and pressure of permanent bonding. The second temporary carrier significantly improves structural rigidity and reduces the risk of breakage; second, to protect the second RDL layer from contamination or damage in subsequent processes, while also preventing it from directly contacting the cavity during the subsequent M1 layer PVD process, thus avoiding safety issues.

[0082] The lower glass substrate, with the second temporary carrier bonded to it, is placed in a laser debonding device. Laser parameters (wavelength, power, scanning speed, etc.) are adjusted to precisely focus the laser at the bonding interface between the titanium barrier layer and the first temporary carrier. The absorption characteristics of the titanium barrier layer for specific wavelengths of laser light guide energy concentration at the bonding interface, causing the bonding material to fail, thus quickly and accurately removing the first temporary carrier. Simultaneously, the titanium barrier layer prevents laser energy from being transmitted to the underlying substrate and functional layers, avoiding damage. After removing the first temporary carrier, the titanium barrier layer also detaches or is removed by subsequent processes, exposing the upper surface of the lower glass substrate, preparing it for permanent bonding of the upper and lower substrates.

[0083] The above solution, by adding a second temporary carrier, effectively solves the problem of breakage caused by insufficient overall structural thickness during permanent bonding. It also provides comprehensive protection for the second RDL layer, avoiding contamination, damage, and safety hazards in subsequent processes, thus ensuring the integrity and performance stability of the functional layer. The application of laser debonding technology enables efficient and precise removal of the first temporary carrier and the titanium barrier layer. Compared to traditional mechanical peeling or chemical dissolution methods, it offers higher debonding efficiency and less damage to the substrate and functional layer, significantly improving process advancement and product yield.

[0084] In some embodiments, the processes for forming the first redistribution layer and the second redistribution layer both include: physical vapor deposition, photolithography, electroplating, resist stripping, and etching.

[0085] Physical vapor deposition (PVD) is a process in which a metallic material (such as titanium or copper) is converted into gaseous atoms, molecules, or ions using physical methods (such as evaporation or sputtering) in a vacuum environment, and then deposited onto a substrate surface to form a thin film. In redistribution layer (RDL) fabrication, it is primarily used to deposit a metal seed layer, providing a conductive foundation for subsequent electroplating processes. It offers advantages such as fast deposition rate, high film purity, and strong adhesion to the substrate.

[0086] Photolithography refers to the process of applying photoresist to a substrate surface using photochemical reactions. Through exposure and development using a photomask, a photoresist pattern is formed on the photoresist, mirroring the pattern on the photomask. This pattern then serves as a mask for subsequent electroplating and etching processes. This process is the core step in patterning the RDL layer, characterized by high pattern resolution and precise positioning.

[0087] Electroplating refers to the process of reducing and depositing metal ions (such as copper ions) onto a seed layer on the surface of a substrate in an electrolytic environment, using a photoresist pattern as a mask, to form a metal line with a specific thickness and pattern. The electroplating process allows for precise control of the thickness and uniformity of the metal plating layer, ensuring that the RDL layer has good conductivity and structural stability.

[0088] Photoresist removal refers to the removal of residual photoresist mask after the photolithography process using chemical or physical methods. Commonly used photoresist removal methods include wet chemical removal (such as immersion in a photoresist remover solution) and dry removal (such as plasma removal) to ensure that subsequent etching processes can accurately target the target area.

[0089] Etching refers to the removal of the seed layer not covered by electroplated metal using chemical or physical methods, ultimately shaping the metal circuit pattern of the RDL layer. The etching process must possess good selectivity to ensure that only the target seed layer is removed without damaging the electroplated metal circuitry and substrate.

[0090] Specifically, both the first redistribution layer (upper glass substrate side) and the second redistribution layer (lower glass substrate side) follow the core process of "PVD - photolithography - electroplating - resist removal - etching", and the specific principles are as follows: PVD seed layer deposition: The substrate (upper or lower glass substrate) is placed in the vacuum chamber of a PVD equipment. Using a metal material as the target, metal atoms are detached from the target and deposited onto the substrate surface through sputtering or evaporation, forming a uniform and dense metal seed layer (such as a titanium / copper composite seed layer). The thickness and uniformity of the seed layer directly affect the stability of subsequent electroplating processes and the adhesion of metal circuits, requiring strict control of process parameters.

[0091] Photolithography patterning: A layer of photoresist is uniformly coated on the surface of the seed layer, and the RDL pattern on the mask is transferred to the photoresist using photolithography equipment. Specifically, after precise alignment of the mask and substrate, the photoresist is irradiated with a light source such as ultraviolet light, causing a photochemical reaction in the exposed areas. Subsequently, the substrate is placed in a developing solution to remove the exposed (or unexposed) photoresist, forming a photoresist mask consistent with the RDL pattern. The areas not covered by the photoresist become the areas for subsequent electroplating of metal lines.

[0092] Electroplating for thickened metal: A substrate with a photoresist mask is placed in an electroplating solution, using the substrate as the cathode and the metal target as the anode, and a specific current and voltage are applied. Metal ions in the electroplating solution migrate towards the cathode under the influence of the electric field, and are reduced and deposited in the exposed area of ​​the seed layer (the area not covered by the photoresist), forming a metal line with a thickness meeting design requirements. During the electroplating process, parameters such as current density, electroplating time, and electroplating solution temperature must be controlled to ensure uniform thickness and dense crystallization of the metal line.

[0093] Photoresist stripping: After electroplating, a photoresist stripping process is used to remove the remaining photoresist mask from the substrate surface. If wet stripping is used, the substrate is immersed in a special photoresist stripping solution, and the photoresist is dissolved and stripped under the action of the stripping solution; if dry stripping is used, the chemical activity of plasma is used to destroy the molecular structure of the photoresist, causing it to decompose into gaseous substances that are then extracted.

[0094] Etching to form the redistribution layer (RDL): The substrate after resist removal is placed in an etching apparatus, and wet etching (such as using an acidic etchant) or dry etching (such as plasma etching) is used to remove the seed layer not covered by the electroplated metal. During the etching process, the etchant only reacts with the seed layer, while the electroplated metal lines are preserved because they are protected by the photoresist (before resist removal) or have inherent etching resistance, ultimately forming a complete redistribution layer.

[0095] Through the coordinated efforts of the above steps, the patterning and metallization of the redistribution layer can be precisely achieved, ensuring that the RDL layer has high resolution, good conductivity, and structural stability, meeting the signal interconnection requirements of glass-based packaged antennas. This process combination has good compatibility and controllability, and can be adapted to the design requirements of RDLs of different sizes and numbers of layers by adjusting process parameters (such as PVD deposition power, photolithography exposure dose, electroplating current density, etc.), offering high flexibility and a wide range of applications.

[0096] In some embodiments, the bonding layer is a photolithographically patternable bonding adhesive layer, which is formed on the lower surface of the upper glass substrate by a photolithography process.

[0097] Specifically, after the BM2 layer is fabricated on the upper glass substrate, a full-surface wafer lamination process is used to uniformly coat the photolithographically patternable bonding adhesive onto the lower surface of the lower glass substrate (the surface where the BM2 layer is located). During the coating process, the thickness of the bonding adhesive is controlled (designed thickness is 20μm) to ensure that the adhesive layer is uniform, bubble-free, and defect-free, providing a good foundation for subsequent photolithography and bonding.

[0098] The upper glass substrate coated with bonding adhesive is then placed in a photolithography apparatus, and a suitable photomask is installed and precisely aligned with the substrate. The pattern on the photomask corresponds to the preset bonding areas. Ultraviolet light irradiation causes a photochemical reaction in the exposed bonding adhesive areas. The substrate is then placed in a developing solution to remove unexposed (or exposed) bonding adhesive areas, retaining the bonding adhesive in the preset bonding areas to form the desired P-layer (bonding layer) pattern. This patterning process must ensure that the bonding adhesive pattern precisely matches the functional areas of the upper and lower substrates to avoid obstructing signal transmission paths or TGV interconnect areas.

[0099] The upper glass substrate with the patterned bonding layer (P-layer) is then precisely aligned with the lower glass substrate, ensuring that corresponding areas of the bonding layer adhere to the lower glass substrate. The assembly is then placed in a bonding apparatus, where specific temperature, pressure, and time parameters are applied to allow the bonding adhesive to cure, forming a stable chemical bond structure and achieving a permanent connection between the upper and lower glass substrates. The cured bonding layer ensures strong connection and, due to its patterned design, adapts to the cavity structure of the encapsulated antenna, avoiding any impact on signal transmission.

[0100] The photolithographically patternable bonding adhesive layer achieves precise patterning through photolithography, which can accurately match the structural design of the packaged antenna. It forms bonding only in the preset area, perfectly adapting to the cavity structure of the product. This avoids the obstruction or damage to the cavity caused by traditional full-surface bonding, ensuring the radiation performance and signal transmission efficiency of the packaged antenna.

[0101] In other embodiments, the alignment marks (i.e., mark points) on the upper glass substrate are formed simultaneously through "laser aperture + 10-minute acid etching," specifically a mirrored glass mark structure. Before the entire glass crystal is fabricated, the mark points are prepared using a laser etching process combined with a 30-minute hydrofluoric acid (HF) etching process. Their size and spacing are precisely designed (e.g., the spacing between adjacent mark points is 19.43 μm, 18.33 μm, 17.89 μm, and 18.11 μm, respectively) to ensure high-precision alignment with the TGV of the lower glass substrate. This provides dual positioning assurance for the permanent bonding of the upper and lower substrates and the interconnection of the RDL layer, further improving the alignment accuracy of the overall structure.

[0102] After the upper and lower glass substrates are permanently bonded, the M2 layer needs to be fabricated. Due to the cavity structure of the product, traditional physical vapor deposition (PVD) processes may cause changes in cavity pressure that could affect the cavity integrity, or the deposited material may not uniformly cover the cavity walls. Therefore, vapor deposition is chosen for PVD. Vapor deposition, performed in a vacuum environment, heats and evaporates the metal material, causing its atoms to be uniformly deposited onto the substrate surface and the cavity walls. This allows for precise control of the coating thickness and uniformity, ensuring the integrity and conductivity of the M2 layer, avoiding process defects caused by the cavity structure, and guaranteeing the overall performance of the packaged antenna.

[0103] After laser release of the temporary bond (removal of the second temporary carrier), the packaged antenna wafer needs to be diced and separated. To avoid glass peeling caused by stress concentration in traditional single-cut processes, a two-cutting strategy is adopted: the first cut is a shallow cut to release some processing stress; the second cut completes the cut, separating the individual packaged antenna products. This optimized strategy effectively reduces stress concentration during the cutting process, ensuring that the cut product has neat edges, a complete structure, and no defects such as peeling or chipping, thus guaranteeing the product's appearance quality and structural stability.

[0104] Throughout the fabrication process, the thickness of each functional layer strictly adheres to the design standards: the thickness of each metal layer (M1, M2, BM1, BM2, etc.) is 5μm to ensure good conductivity; the bonding layer (P layer) is 20μm thick to ensure sufficient bonding strength and insulation performance; the final thickness of the upper glass substrate is 200μm, and the thickness of the lower glass substrate after thinning is 200μm. The overall structural thickness is adapted to the thinning requirements of high-frequency communication equipment, while the precise control of the thickness ensures impedance matching accuracy and signal transmission efficiency.

[0105] like Figure 5 The image shows a cross-section of the layered structure of a glass-based packaged antenna, wherein: The overall height is H, which represents the total thickness of a single unit of the packaged antenna; The thickness of the upper glass substrate is L2, and the thickness of the lower glass substrate is L1; P is the bonding layer, used to achieve permanent bonding between the upper and lower glass substrates; M is a metal wiring layer with a thickness of T; Figure 5 The "I"-shaped structure of the middle metal layer reflects the vertical interconnection between the upper and lower rewiring layers through through-holes in the glass.

[0106] like Figure 6 As shown, layer 1 is the lower glass substrate (containing metallized TGV and the second redistribution layer); layer 2 is the upper glass substrate (containing the first redistribution layer), with the "cross-shaped" structure on the surface serving as the antenna radiating element, and the ring-shaped structure at the edge corresponding to the mirror alignment hole; layer 3 is the bonding layer (a bonding adhesive layer that can be patterned by photolithography), and its ring-shaped patterned design is adapted to the cavity structure of the product; layer 4 is the temporary carrier board (including the first temporary carrier board and the second temporary carrier board). Figure 6 The middle arrow 'r' represents the removable nature of the temporary carrier, reflecting the process flow of "temporary bonding-debonding".

[0107] like Figure 7 As shown, Figure 7The left side shows the processing flow of the lower glass substrate. Figure 7 The right side shows the processing flow of the upper glass substrate: the left side shows the process flow in sequence as follows: “glass blind via preparation → PVD deposition + temporary bonding → thinning → BM1 layer preparation → temporary bonding → debonding → M1 layer preparation”; the right side shows the process flow in sequence as follows: “alignment mark (MARK) preparation → BM2 layer preparation → bonding layer (P) preparation → permanent bonding → M2 layer preparation → debonding”.

[0108] like Figure 8 As shown, Figure 8 The dark-colored dots represent the metallized TGV, and their uniform distribution reflects the precision of the "laser pretreatment + acid-base composite etching" process. The size consistency and uniform distribution of the TGV ensure the accurate interconnection of the subsequent rewiring layer, avoiding the risk of signal crosstalk or open circuit.

[0109] like Figure 9 As shown, the array structure on the wafer surface is a glass-based packaged antenna unit, demonstrating the mass production adaptability of the process of this invention. Figure 9 The transparent substrate is a quartz glass substrate, and the metal pattern on the surface is a redistribution layer and antenna unit. The integrity of the wafer and the consistency of the units verify the effectiveness of the present invention's "acid-base composite etching, precise alignment, temporary bonding-debonding" process, which meets the needs of large-scale application in the field of high-frequency communication.

[0110] Finally, it should be noted that although the above embodiments have been described in the text and drawings of this application, this should not limit the scope of patent protection of this application. Any technical solutions that are based on the essential concept of this application and utilize the content described in the text and drawings of this application, resulting in equivalent structural or procedural substitutions or modifications, as well as the direct or indirect application of the technical solutions of the above embodiments to other related technical fields, are all included within the scope of patent protection of this application.

Claims

1. A method for fabricating a glass-based packaged antenna, characterized in that, Includes the following steps: S1: Provides a lower glass substrate and an upper glass substrate; S2: On the upper glass substrate, a mirror alignment mark is simultaneously formed on the lower surface of the upper glass substrate by laser guidance and acidic solution etching; S3: A glass blind hole is formed on the lower glass substrate, and the glass blind hole is metallized and filled. The glass blind hole is formed by an acid-base composite etching process, which specifically includes: first etching with an alkaline etching solution to form a blind hole prototype, and then etching with an acidic etching solution to repair the sidewall of the blind hole. S4: Thin the lower glass substrate until the glass blind hole penetrates the lower surface of the lower glass substrate to obtain a through glass hole. Using the alignment mark as a reference, form a first redistribution layer on the lower surface of the upper glass substrate. S5: Based on the through-glass via after metallization filling, a second redistribution layer is formed on the upper surface of the lower glass substrate. S6: Align and bond the upper glass substrate and the lower glass substrate through a bonding layer, wherein the first redistribution layer and the second redistribution layer are aligned through the alignment mark and the through-glass via.

2. The method for fabricating a glass-based packaged antenna according to claim 1, characterized in that, In step S2, the formation of the alignment mark specifically includes the following steps: First, a laser is used to create holes at a predetermined position on the upper glass substrate. Then, an acidic etching solution based on hydrofluoric acid is used to etch the laser-drilled area, simultaneously forming mirror-aligned holes on the lower surface of the upper glass substrate.

3. The method for fabricating a glass-based packaged antenna according to claim 2, characterized in that, The sidewall roughness of the mirror alignment hole is less than 0.5 μm.

4. The method for fabricating a glass-based packaged antenna according to claim 1, characterized in that, In step S3, the first etching using an alkaline etching solution to form a blind hole prototype, followed by a second etching using an acidic etching solution to refine the blind hole sidewalls, specifically includes: S31: A laser is used to pre-process the lower glass substrate at a predetermined position to form an etching guide path; S32: The first etching is performed using an alkaline etching solution to form the initial shape of the blind hole; S33: A second etching is performed using an acidic etching solution to refine the sidewalls of the blind hole prototype and control its opening size.

5. The method for fabricating a glass-based packaged antenna according to claim 4, characterized in that, The alkaline etching solution is a potassium hydroxide solution, and the diameter of the blind hole prototype is 30 μm to 50 μm; the acidic etching solution is a hydrofluoric acid solution, and the size of the repaired blind hole sidewall is increased by 5 μm to 15 μm based on the diameter of the blind hole prototype.

6. The method for fabricating a glass-based packaged antenna according to claim 4, characterized in that, The sum of the depths of the first etching and the second etching is 200-250 μm.

7. The method for fabricating a glass-based packaged antenna according to claim 1, characterized in that, Before thinning the lower glass substrate, the following steps are also included: A titanium barrier layer is formed on the upper surface of the lower glass substrate; A first temporary carrier plate is bonded to the titanium barrier layer.

8. The method for fabricating a glass-based packaged antenna according to claim 7, characterized in that, After the second redistribution layer is formed and before the alignment bonding is performed, the following steps are also included: A second temporary carrier is bonded to the lower surface of the lower glass substrate having the second redistribution layer. The first temporary carrier plate and the titanium barrier layer are removed by laser debonding.

9. The method for fabricating a glass-based packaged antenna according to claim 1, characterized in that, The processes for forming the first redistribution layer and the second redistribution layer both include: physical vapor deposition, photolithography, electroplating, resist stripping, and etching.

10. The method for fabricating a glass-based packaged antenna according to claim 1, characterized in that, The bonding layer is a photolithographically patternable bonding adhesive layer, which is formed on the lower surface of the upper glass substrate by a photolithography process.

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