Large-field-of-view dispersion microscope objective

By designing a large field-of-view dispersive microscope objective, the dispersive properties are utilized to simultaneously observe adjacent marker points on the chip and wafer, solving the problem that existing technologies cannot simultaneously observe two marker points. This achieves high-precision chip-wafer bonding, improving bonding success rate and equipment applicability.

CN121832065APending Publication Date: 2026-04-10XINHUI LIANXIN (JIANGSU) TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-29
Publication Date
2026-04-10

AI Technical Summary

Technical Problem

Existing high-magnification microscopy systems cannot simultaneously observe two marker points between the chip and the wafer, resulting in low precision and efficiency in chip-wafer bonding.

Method used

A large field-of-view dispersive microscope objective is designed, using a 5X objective lens in conjunction with a custom 2X tube lens to achieve a 10X magnification effect with an object-side field of view of 11mm. It utilizes dispersive properties to simultaneously observe adjacent markers on chips and wafers, and adapts to different bonding requirements by using light sources of different wavelengths.

Benefits of technology

It improves the precision and efficiency of chip-wafer bonding, and can simultaneously observe adjacent markers that need to be bonded during the bonding process, greatly improving the success rate of wafer bonding, and is suitable for high-precision wafer bonding equipment.

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Abstract

The invention, which relates to the technical field of microscopic imaging and wafer bonding, provides a large-field-of-view dispersion microscope objective comprising a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens and a ninth lens in sequence from an emergent side to an object side. The first lens and the second lens are glued to form a group of doublet lens, the fourth lens and the fifth lens are glued to form a group of doublet lens, and the sixth lens and the seventh lens are glued to form a group of doublet lens. The dispersion microscope objective is a 5X objective, the object space view field is 11mm, the dispersion microscope objective is used in a high-precision chip and wafer bonding visual system, adjacent mark points of a chip and a wafer needing to be bonded can be observed at the same time through the microscope objective by means of dispersion characteristics, and due to the fact that real-time observation can be achieved in the bonding process, the bonding precision is greatly improved. Therefore, by using the large-view-field dispersion microscope objective, the precision and efficiency of a chip and wafer bonding system can be greatly improved.
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Description

TECHNICAL FIELD

[0001] The present application relates to the field of microscopic imaging and wafer bonding, and particularly relates to a large field of view dispersive microscopic objective. BACKGROUND

[0002] The alignment accuracy is the most critical factor to ensure the quality of wafer bonding in a wafer bonding device, and the vision system plays a decisive role. In the latest high-precision bonding device, a near-infrared optical system has been used, and the near-infrared band can penetrate the semiconductor wafer to directly observe the mark points. One main direction of bonding application is wafer-to-wafer bonding (W2W), which can mark points on the edge of each wafer, and then use two sets of vision systems to bond the edge mark points of the wafers. In the bonding process, the infrared system is first used to observe the mark points on the lower surface of the upper wafer, and then a piezoelectric ceramic driver is used to move the entire optical system downward to observe the mark points on the upper surface of the lower wafer. The positions of the mark points of the upper wafer and the lower wafer are recorded, and the position of the lower wafer is adjusted by a high-precision displacement platform to move the mark points of the lower wafer to the position of the mark points of the upper wafer. In this process, since the infrared system can observe the position of the mark points, the bonding accuracy is improved.

[0003] Another important application in bonding is die-to-wafer bonding (D2W), which bonds a chip to a wafer. Two mark points are usually needed for alignment at the same time, i.e., two mark points on the wafer and two mark points on the chip are aligned at the same time. Unlike W2W, the volume of the chip is usually small, and the commonly used chip length is about 11 mm, and the distance between the two mark points can be in the range of 6-11 mm. For this range, the conventional high-power microscope (high-power microscope system has a small field of view on the object side, and the infrared camera 10X system only has 0.8 mm) system cannot cover the two mark points, but the interval of the two mark points cannot be arranged with two sets of systems, so it is impossible to align the two mark points with a few millimeters apart at the same time. SUMMARY

[0004] In view of this, embodiments of this application provide a large field-of-view dispersive microscope objective, which solves the problem of how to simultaneously align two marker points on a wafer with two marker points on a chip, especially when the interval between the two markers exceeds the detection range of a single vision system. This dispersive microscope objective is a 5X objective lens, used in conjunction with a customized 2X tube lens to achieve a 10X magnification effect, with an object-side field of view of 11mm. It is used in high-precision chip-to-wafer bonding, i.e., D2W bonding vision systems. This microscope objective utilizes dispersive properties to simultaneously observe adjacent marker points on the chip wafers to be bonded. Because real-time observation is possible during the bonding process, using the large field-of-view dispersive microscope objective of this application can significantly improve the accuracy and efficiency of the D2W bonding system.

[0005] This application provides the following technical solution: a large field-of-view dispersive microscope objective, which comprises, from the exit side to the object side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens, and a ninth lens; wherein the first lens and the second lens are cemented together to form a cemented doublet, the fourth lens and the fifth lens are cemented together to form a cemented doublet, and the sixth lens and the seventh lens are cemented together to form a cemented doublet.

[0006] And it satisfies the following relationship: 0.001≤Δλ / ΔWD≤0.002;

[0007] 20nm≤Δλ;

[0008] 20μm≤ΔWD,WD(λ min ≥22mm;

[0009] 2y = 11mm;

[0010] NA ≥ 0.3;

[0011] Where, λ min λ is the shortest operating wavelength of the dispersive microscope objective. max Δλ = λ, where λ is the longest operating wavelength of the dispersive microscope objective. max -λ min WD(λ) max ) represents the back intercept corresponding to the longest operating wavelength, WD(λ) min ) represents the back intercept corresponding to the shortest operating wavelength, ΔWD = WD(λ) max )-WD(λ min ), where y is the half field of view and NA is the numerical aperture of the dispersive microscope objective.

[0012] According to one embodiment of this application, the shortest operating wavelength λ of the dispersive microscope objective is... min The longest operating wavelength λ of the dispersive microscope objective is 1100 nm.max 1300 nm; 100 μm ≤ ΔWD≤ 200 μm.

[0013] According to an embodiment of the present application, the focal length of the dispersive microscope objective is f, the numerical aperture of the dispersive microscope objective is NA, and the following relationship is satisfied:

[0014] 10 ≤ f * NA ≤ 14.

[0015] According to an embodiment of the present application, the focal length of the dispersive microscope objective is f = 40 mm, and the numerical aperture NA is 0.3.

[0016] According to an embodiment of the present application, the focal length of the first lens and the second lens glued together as a doublet is f 12 , the focal length of the third lens is f3, the focal length of the fourth lens and the fifth lens glued together as a doublet is f 45 , the focal length of the sixth lens and the seventh lens glued together as a doublet is f 67 , the focal length of the eighth lens is f8, the focal length of the ninth lens is f9, the focal length of the dispersive microscope objective is f, and the following relationship is satisfied:

[0017] -18.20 ≤ f 12 / f ≤ -13.50

[0018] 1.20 ≤ f3 / f ≤ 1.60;

[0019] -1.80 ≤ f 45 / f ≤ -1.40;

[0020] 10.70 ≤ f 67 / f ≤ 7.90;

[0021] 34.40 ≤ f8 / f ≤ 25.40;

[0022] 0.80 ≤ f9 / f ≤ 1.10.

[0023] According to an embodiment of the present application, the first face curvature radius of the first lens is r1, the glued face curvature radius of the second face of the first lens and the first face of the second lens is r2, the second face curvature radius of the second lens is r3, the first face curvature radius of the third lens is r4, the second face curvature radius of the third lens is r5, the first face curvature radius of the fourth lens is r6, the glued face curvature radius of the second face of the fourth lens and the first face of the fifth lens is r7, the second face curvature radius of the fifth lens is r8, the first face curvature radius of the sixth lens is r9, the glued face curvature radius of the second face of the sixth lens and the first face of the seventh lens is r10 the second surface curvature radius of the seventh lens is r 11 the first surface curvature radius of the eighth lens is r 12 the second surface curvature radius of the eighth lens is r 13 the first surface curvature radius of the ninth lens is r 14 the second surface curvature radius of the ninth lens is r 15 and the following relationships are satisfied:

[0024] 3.15 ≤ (r1+r2) / (r1-r2) ≤ 4.30;

[0025] -2.90 ≤ (r2+r3) / (r2-r3) ≤ -2.15;

[0026] -1.30 ≤ (r4+r5) / (r4-r5) ≤ -0.95;

[0027] 7.40 ≤ (r6+r7) / (r6-r7) ≤ 10.00;

[0028] 4.90 ≤ (r7+r8) / (r7-r8) ≤ 6.60;

[0029] -1.40 ≤ (r9+r 10 ) / (r9-r 10 ) ≤ -1.00;

[0030] 1.10 ≤ (r 10 +r 11 ) / (r 10 -r 11 ) ≤ 1.50;

[0031] 12.20 ≤ (r 12 +r 13 ) / (r 12 -r 13 ) ≤ 16.40;

[0032] -3.00 ≤ (r 14 +r 15 ) / (r 14 -r 15 ) ≤ -2.30.

[0033] According to an embodiment of the present application, the thickness of the first lens is d1, the thickness of the second lens is d2, the thickness of the third lens is d3, the thickness of the fourth lens is d4, the thickness of the fifth lens is d5, the thickness of the sixth lens is d6, the thickness of the seventh lens is d7, the thickness of the eighth lens is d8, the thickness of the ninth lens is d9, the total length of the chromatic dispersion microscope objective from the first lens to the focus position is TTL, and the following relationships are satisfied:

[0034] 0.03≤d1 / TTL≤0.04;

[0035] 0.08≤d2 / TTL≤0.11;

[0036] 0.07≤d3 / TTL≤0.10;

[0037] 0.08≤d4 / TTL≤0.11;

[0038] 0.03≤d5 / TTL≤0.04;

[0039] 0.03≤d6 / TTL≤0.04;

[0040] 0.06≤d7 / TTL≤0.08;

[0041] 0.06≤d8 / TTL≤0.08;

[0042] 0.06≤d9 / TTL≤0.08.

[0043] According to an embodiment of the present application, the interval between the double cemented lens formed by cementing the first lens and the second lens and the third lens is t1, the interval between the third lens and the double cemented lens formed by cementing the fourth lens and the fifth lens is t2, the interval between the double cemented lens formed by cementing the fourth lens and the fifth lens and the double cemented lens formed by cementing the sixth lens and the seventh lens is t3, the interval between the double cemented lens formed by cementing the sixth lens and the seventh lens and the eighth lens is t4, the interval between the eighth lens and the ninth lens is t5, the total length of the chromatic dispersion microscope objective from the first lens to the focus position is TTL, and the following relationships are satisfied:

[0044] 0.02≤t1 / TTL≤0.03;

[0045] 0.02≤t2 / TTL≤0.03;

[0046] 0.07≤t3 / TTL≤0.10;

[0047] 0.01≤t4 / TTL≤0.015;

[0048] 0.03≤t5 / TTL≤0.04.

[0049] According to an embodiment of the present application, the total length of the dispersive microscope objective from the first lens to the focal position is TTL, the back aperture of the dispersive microscope objective is WD, and the following relationship is satisfied:

[0050] 0.23≤WD / TTL≤0.28.

[0051] According to an embodiment of the present application, the refractive index of the first lens is n1, the refractive index of the second lens is n2, the refractive index of the third lens is n3, the refractive index of the fourth lens is n4, the refractive index of the fifth lens is n5, the refractive index of the sixth lens is n6, the refractive index of the seventh lens is n7, the refractive index of the eighth lens is n8, the refractive index of the ninth lens is n9, and the following relationships are satisfied:

[0052] 1.60≤n1≤2.00;

[0053] 1.60≤n2≤2.00;

[0054] 1.85≤n3≤2.30;

[0055] 1.60≤n4≤2.00;

[0056] 1.70≤n5≤2.00;

[0057] 1.45≤n6≤1.80;

[0058] 1.80≤n7≤2.20;

[0059] 1.70≤n8≤2.10;

[0060] 1.85≤n9≤2.30.

[0061] Compared with the prior art, the beneficial effects that can be achieved by the at least one technical solution adopted by the embodiment of the present application include: the dispersion microscope objective of the embodiment of the present application is a 5X objective, which is matched with a customized 2X tube lens to achieve a 10X magnification effect, and the object field of view is 11 mm, which is used in a high-precision D2W (chip and wafer) bonding vision system. In a high-precision wafer double-mark point bonding vision system, the special design of the large field of view dispersion microscope objective of the embodiment of the present application can simultaneously observe four adjacent mark points (two on the chip and two on the wafer, and the same layer mark points are 6-11 mm apart) of the chip and the wafer that need to be bonded during the bonding process. Since the adjacent mark points are observed at the same time, the success rate of this type of wafer bonding is greatly improved. In addition, due to the characteristics of the dispersion microscope objective, only different wavelengths of light sources need to be replaced to adapt to different bonding requirements, so it can be widely used in high-precision wafer bonding equipment, and is conducive to the popularization of high-precision wafer bonding technology. BRIEF DESCRIPTION OF DRAWINGS

[0062] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0063] Figure 1 is a structure diagram of the 5X large field of view dispersion microscope objective of the embodiment of the present application with an object field of view of 11 mm;

[0064] Figure 2 is a point array diagram of the large field of view dispersion microscope objective of the embodiment of the present application (wavelength 1.1 μm);

[0065] Figure 3 is a point array diagram of the large field of view dispersion microscope objective of the embodiment of the present application (wavelength 1.2 μm);

[0066] Figure 4 is a point array diagram of the large field of view dispersion microscope objective of the embodiment of the present application (wavelength 1.3 μm);

[0067] Figure 5 is an MTF curve of the large field of view dispersion microscope objective of the embodiment of the present application (wavelength 1.1 μm);

[0068] Figure 6 is an MTF curve of the large field of view dispersion microscope objective of the embodiment of the present application (wavelength 1.2 μm);

[0069] Figure 7 is an MTF curve of the large field of view dispersion microscope objective of the embodiment of the present application (wavelength 1.3 μm);

[0070] Figure 8 is a distortion curve of a large field of view dispersion microscopic objective lens (wavelength 1.1 μm) of an embodiment of the present application;

[0071] Figure 9 is a distortion curve of a large field of view dispersion microscopic objective lens (wavelength 1.2 μm) of an embodiment of the present application;

[0072] Figure 10 is a distortion curve of a large field of view dispersion microscopic objective lens (wavelength 1.3 μm) of an embodiment of the present application. DETAILED DESCRIPTION

[0073] The embodiments of the present application will be described in detail below with reference to the drawings.

[0074] The above and other advantages and effects of the present application will become readily apparent to those of ordinary skill in the art from the following description thereof, taken in conjunction with the accompanying drawings. It is to be understood that the described embodiments are only a part of the embodiments of the present application, and do not represent the full scope of the present application. The present application can be carried out or applied by other different specific embodiments, and the details of the present application can be modified or changed based on different views and applications without departing from the spirit of the present application. It is to be noted that the following embodiments and features of the embodiments can be combined with each other without conflict. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of the present application.

[0075] As shown in Figure 1 , the embodiment of the present application provides a large field of view dispersion microscopic objective lens, which comprises, in order from an exit side to an object side, a first lens L1, a second lens L2, a third lens L3, a fourth lens L4, a fifth lens L5, a sixth lens L6, a seventh lens L7, an eighth lens L8, and a ninth lens L9; wherein the first lens L1 and the second lens L2 are cemented into a set of double cemented lenses, the fourth lens L4 and the fifth lens L5 are cemented into a set of double cemented lenses, and the sixth lens L6 and the seventh lens L7 are cemented into a set of double cemented lenses;

[0076] and satisfies the following relationship: 0.001≤Δλ / ΔWD≤0.002;

[0077] 20nm≤Δλ;

[0078] 20μm≤ΔWD, WD(λ min )≥22mm;

[0079] 2y=11mm;

[0080] NA≥0.3;

[0081] wherein λ min is the shortest working wavelength of the dispersive microscope objective, λ max is the longest working wavelength of the dispersive microscope objective, Δλ = λ max - λ min ; WD(λ max ) is the back intercept corresponding to the longest working wavelength, WD(λ min ) is the back intercept corresponding to the shortest working wavelength, ΔWD = WD(λ max ) - WD(λ min ), y is the half field of view, and NA is the numerical aperture of the dispersive microscope objective.

[0082] Conventional microscope objectives require achromatic or apochromatic design, i.e., the focusing positions of all wavelengths are designed together. The dispersive microscope objective of the embodiments of the present application adopts an opposite idea, the principle of which is to use the dispersion characteristics of the lens to design different wavelengths at different focusing positions, which is similar to the dispersive lens of spectral confocal, but is obviously different from the dispersive lens. The target of the dispersive lens is to measure the position, not to image, so the dispersive lens only considers the design of the on-axis point, and the numerical aperture (NA) is small, and a large range of dispersion distance is required. In the embodiments of the present application, imaging is required, so the field of view of the camera needs to be considered, i.e., the performance of each wavelength within a certain field of view needs to be considered. The distance between the bonded chip and the wafer is relatively close (tens of microns), and in order to prevent imaging crosstalk between the upper and lower images, the depth of field range of each wavelength is small, which requires a certain numerical aperture.

[0083] Therefore, the dispersive microscope objective needs to have parameters similar to those of a microscope objective and have the characteristics of a dispersive lens. However, the field of view of a high-power microscope objective is very small, and since a very small field of view infrared camera (sensor 1 / 2 inch, diagonal 8.2 mm) is used in the bonding vision system, for example, a 10X system, the corresponding object field of view is only 0.82 mm. The maximum interval between the two marks of the chip and the wafer that need to be bonded is 11 mm, in order to be able to observe the adjacent marks in the same layer at the same time, the dispersive microscope objective not only needs to have a high numerical aperture (a large numerical aperture corresponds to a small field of view) of a microscope objective, but also needs to have a large field of view.

[0084] In one embodiment, the shortest working wavelength λ min of the dispersive microscope objective is 1100 nm, the longest working wavelength λ max of the dispersive microscope objective is 1300 nm, and 100 μm ≤ ΔWD ≤ 200 μm. In this embodiment, it has been verified in the near-infrared transmission detection wafer that the wavelength of 1.1-1.3 μm has the best effect, so the design wavelength band of the large field of view dispersive microscope objective in this embodiment is 1.1-1.3 μm.

[0085] For different bonding processes, the positions of the chip and the wafer are different, usually between 30-200 μm, so the dispersion objective is designed for 1.1-1.3 μm, the focusing distances of 1.1 μm and 1.3 μm are different by 200 μm, the focusing distances of the wavelength in the band range are basically linear, i.e. 1.1 μm and 1.2 μm are different by about 100 μm, and so on, so for different bonding processes, only different wavelength light sources need to be replaced to obtain clear imaging of the chip and the wafer at different distances, and different high-precision bonding requirements can be quickly adapted.

[0086] Therefore, in the high-precision wafer double-mark point bonding vision system, the special design of the large field of view dispersion microscopic objective of the embodiment of the application can simultaneously observe the adjacent four mark points (two on the chip and two on the wafer, and the same layer mark points are 6-11 mm apart) of the chip and the wafer that need to be bonded in real time during the bonding process, so the success rate of this kind of wafer bonding is greatly improved. In addition, due to the characteristics of the dispersion microscopic objective, only different wavelength light sources need to be replaced to adapt to different bonding requirements, so the dispersion microscopic objective can be widely applied to high-precision wafer bonding equipment and is conducive to the popularization of high-precision wafer bonding technology.

[0087] In an embodiment, the first lens is a double-concave negative lens, the second lens is a double-convex positive lens, the third lens is a double-convex positive lens, the fourth lens is a double-convex positive lens, the fifth lens is a double-concave negative lens, the sixth lens is a meniscus negative lens, the seventh lens is a meniscus negative lens, the eighth lens is a meniscus negative lens, and the ninth lens is a double-convex positive lens.

[0088] In an embodiment, the focal length of the dispersion microscopic objective is f, the numerical aperture of the dispersion microscopic objective is NA, and the following relationship is satisfied:

[0089] 10≤f*NA≤14.

[0090] In specific implementation, the lens parameters of the dispersion microscopic objective are as follows:

[0091] 1) f = 40 mm (the focal length f is 40 mm, matched with a 400 mm tube lens, and the magnification is -10X, and the objective of the embodiment is a 5X objective);

[0092] 2) Numerical aperture NA: 0.3;

[0093] 3) Field of view: 11 mm (large field of view);

[0094] 4) Back working distance WD: ≥20 mm;

[0095] 5) Wavelength: 1.1-1.3 μm;

[0096] 6) Two extreme wavelength focal positions differ by 200 μm (i.e. 1.1 μm and 1.3 μm focal positions differ by 200 μm);

[0097] 7) Distortion: < 0.5% (field of view is usually large and distortion is large, the structure of the embodiment of the present application controls the distortion in a very small range, otherwise the image of the edge will be severely distorted);

[0098] 8) Infinity conjugate telecentric design;

[0099] 9) Thickness compensation design (12 mm fused silica chuck table + 0.8 mm glass or Si substrate).

[0100] In one embodiment, the focal length of the first lens and the second lens glued together as a double glued lens group is f 12 , the focal length of the third lens is f3, the focal length of the fourth lens and the fifth lens glued together as a double glued lens group is f 45 , the focal length of the sixth lens and the seventh lens glued together as a double glued lens group is f 67 , the focal length of the eighth lens is f8, the focal length of the ninth lens is f9, the focal length of the chromatic microscope objective is f, and the following relationships are satisfied:

[0101] -18.20 < f 12 / f < -13.50

[0102] 1.20 < f3 / f < 1.60;

[0103] -1.80 < f 45 / f < -1.40;

[0104] 10.70 < f 67 / f < 7.90;

[0105] 34.40 < f8 / f < 25.40;

[0106] 0.80 < f9 / f < 1.10.

[0107] In one embodiment, the first face curvature radius of the first lens is r1, the glued face curvature radius of the second face of the first lens and the first face of the second lens is r2, the second face curvature radius of the second lens is r3, the first face curvature radius of the third lens is r4, the second face curvature radius of the third lens is r5, the first face curvature radius of the fourth lens is r6, the glued face curvature radius of the second face of the fourth lens and the first face of the fifth lens is r7, the second face curvature radius of the fifth lens is r8, the first face curvature radius of the sixth lens is r9, the glued face curvature radius of the second face of the sixth lens and the first face of the seventh lens is r10 the second surface of the seventh lens has a radius of curvature r 11 the first surface of the eighth lens has a radius of curvature r 12 the second surface of the eighth lens has a radius of curvature r 13 the first surface of the ninth lens has a radius of curvature r 14 the second surface of the ninth lens has a radius of curvature r 15 and the following relationships are satisfied:

[0108] 3.15≤(r1+r2) / (r1-r2)≤4.30;

[0109] -2.90≤(r2+r3) / (r2-r3)≤-2.15;

[0110] -1.30≤(r4+r5) / (r4-r5)≤-0.95;

[0111] 7.40≤(r6+r7) / (r6-r7)≤10.00;

[0112] 4.90≤(r7+r8) / (r7-r8)≤6.60;

[0113] -1.40≤(r9+r 10 ) / (r9-r 10 )≤-1.00;

[0114] 1.10≤(r 10 +r 11 ) / (r 10 -r 11 )≤1.50;

[0115] 12.20≤(r 12 +r 13 ) / (r 12 -r 13 )≤16.40;

[0116] -3.00≤(r 14 +r 15 ) / (r 14 -r 15 )≤-2.30.

[0117] In a specific implementation, the radius of curvature r is in the range of 36.0≤r1≤44.0, 20.5≤r2≤25.0, 47.4≤r3≤58.0, 52.0≤r4≤63.5, 926.0≤r5≤1131.0, 31.0≤r6≤38.0, 24.0≤r7≤29.5, 17.0≤r8≤21.0, 17.0≤r9≤21.0, 225.5≤r 10≤ 276.0, 28.5 ≤ r 11 ≤ 35.0, 20.5 ≤ r 12 ≤ 25.0, 18.0 ≤ r 13 ≤ 22.0, 50.5 ≤ r 14 ≤ 62.0, 109.0 ≤ r 15 ≤ 133.5.

[0118] In one embodiment, the thickness of the first lens is d1, the thickness of the second lens is d2, the thickness of the third lens is d3, the thickness of the fourth lens is d4, the thickness of the fifth lens is d5, the thickness of the sixth lens is d6, the thickness of the seventh lens is d7, the thickness of the eighth lens is d8, the thickness of the ninth lens is d9, the total length of the chromatic dispersion microscope objective from the first lens to the focus position is TTL, and the following relationships are satisfied:

[0119] 0.03 ≤ d1 / TTL ≤ 0.04;

[0120] 0.08 ≤ d2 / TTL ≤ 0.11;

[0121] 0.07 ≤ d3 / TTL ≤ 0.10;

[0122] 0.08 ≤ d4 / TTL ≤ 0.11;

[0123] 0.03 ≤ d5 / TTL ≤ 0.04;

[0124] 0.03 ≤ d6 / TTL ≤ 0.04;

[0125] 0.06 ≤ d7 / TTL ≤ 0.08;

[0126] 0.06 ≤ d8 / TTL ≤ 0.08;

[0127] 0.06 ≤ d9 / TTL ≤ 0.08.

[0128] In particular implementation, the thickness d is in the range of 2.5 ≤ d1 ≤ 3.5, 8.0 ≤ d2 ≤ 10.0, 7.0 ≤ d3 ≤ 9.0, 8.0 ≤ d4 ≤ 10.0, 2.5 ≤ d5 ≤ 3.5, 2.5 ≤ d6 ≤ 3.5, 6.0 ≤ d7 ≤ 8.0, 6.0 ≤ d8 ≤ 8.0, and 5.5 ≤ d9 ≤ 7.0. The total length of the chromatic dispersion microscope objective from the first lens to the focus position TTL is in the range of 90-100 mm.

[0129] In one embodiment, the interval between the first lens and the second lens glued to form a double glued lens and the third lens is t1, the interval between the third lens and the double glued lens formed by the fourth lens and the fifth lens is t2, the interval between the double glued lens formed by the fourth lens and the fifth lens and the double glued lens formed by the sixth lens and the seventh lens is t3, the interval between the double glued lens formed by the sixth lens and the seventh lens and the eighth lens is t4, the interval between the eighth lens and the ninth lens is t5, the total length of the chromatic dispersion microscope objective from the first lens to the focusing position is TTL, and the following relationship is satisfied:

[0130] 0.02≤t1 / TTL≤0.03;

[0131] 0.02≤t2 / TTL≤0.03;

[0132] 0.07≤t3 / TTL≤0.10;

[0133] 0.01≤t4 / TTL≤0.015;

[0134] 0.03≤t5 / TTL≤0.04.

[0135] In one embodiment, the total length of the chromatic dispersion microscope objective from the first lens to the focusing position is TTL, the back aperture of the chromatic dispersion microscope objective is WD, and the following relationship is satisfied:

[0136] 0.23≤WD / TTL≤0.28.

[0137] In one embodiment, the refractive index of the first lens is n1, the refractive index of the second lens is n2, the refractive index of the third lens is n3, the refractive index of the fourth lens is n4, the refractive index of the fifth lens is n5, the refractive index of the sixth lens is n6, the refractive index of the seventh lens is n7, the refractive index of the eighth lens is n8, and the refractive index of the ninth lens is n9, and the following relationship is satisfied:

[0138] 1.60≤n1≤2.00; 1.60≤n2≤2.00; 1.85≤n3≤2.30; 1.60≤n4≤2.00; 1.70≤n5≤2.00; 1.45≤n6≤1.80; 1.80≤n7≤2.20; 1.70≤n8≤2.10; 1.85≤n9≤2.30.

[0139] Table 1 shows the design data of a 5X, 11mm field of view on the object side, large field of view chromatic dispersion microscope objective of an embodiment of the present application.

[0140] Table 1 Design data of chromatic dispersion microscope objective

[0141]

[0142] As Figures 2-10 shown. Figure 2 is the spot diagram of the embodiment of the present application of the large field dispersion microscope objective (wavelength 1.1 μm); Figure 3 is the spot diagram of the embodiment of the present application of the dispersion microscope objective (wavelength 1.2 μm); Figure 4 is the spot diagram of the embodiment of the present application of the dispersion microscope objective (wavelength 1.3 μm); Figure 5 is the MTF curve of the embodiment of the present application of the dispersion microscope objective (wavelength 1.1 μm); Figure 6 is the MTF curve of the embodiment of the present application of the dispersion microscope objective (wavelength 1.2 μm); Figure 7 is the MTF curve of the embodiment of the present application of the dispersion microscope objective (wavelength 1.3 μm); Figures 5-7 In the figure, the horizontal axis spatial frequency in cycles per mm is the spatial frequency, with the unit of cycles per mm, and the vertical axis Modulus of the OTF is the optical transfer function value; Figure 8 is the distortion curve of the embodiment of the present application of the dispersion microscope objective (wavelength 1.1 μm); Figure 9 is the distortion curve of the embodiment of the present application of the dispersion microscope objective (wavelength 1.2 μm); Figure 10 is the distortion curve of the embodiment of the present application of the dispersion microscope objective (wavelength 1.3 μm)。

[0143] It can be seen from Figures 2-4 that the spot diagrams of the dispersion microscope objective at three wavelengths are all within the Airy disk, from Figures 5-7 that the MTF curves of the dispersion microscope objective at three wavelengths are close to the diffraction limit, and from Figures 8-10 that the distortion values of the dispersion microscope objective at three wavelengths are less than 0.5%, which indicates that the imaging quality of the dispersion objective in the range of 1.1-1.3 μm is close to the theoretical limit and the image is deformed very little in a larger field of view.

[0144] The above merely illustrates the specific embodiments of the present application, but the protection scope of the present application is not limited thereto, and any changes or replacements within the technical range disclosed by the present application can be easily thought of by those skilled in the art, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A large field of view dispersive microscope objective characterized in that, The dispersion microscopic objective comprises, in order from the exit side to the object side, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, a seventh lens, an eighth lens, and a ninth lens. And the following relationship is satisfied: 0.001≤Δλ / ΔWD≤0.002; 20nm≤Δλ; 20 μm < ΔWD,WD(λ min ) ≥ 22 mm; 2y=11mm; NA≥0.3; wherein λ min is the shortest working wavelength of the dispersive microscope objective, λ max is the longest working wavelength of the dispersive microscope objective, Δλ = λ max - λ min ; WD(λ max ) is the back aperture for the longest working wavelength, WD(λ min ) is the back aperture for the shortest working wavelength, ΔWD = WD(λ max ) - WD(λ min ), y is the half field of view, and NA is the numerical aperture of the dispersive microscope objective.

2. The large field-of-view dispersive microscope objective of claim 1, wherein, The shortest operating wavelength λ of the dispersive microscope objective min The longest operating wavelength λ of the dispersive microscope objective is 1100 nm. max The value is 1300nm; 100μm≤ΔWD≤200μm.

3. The large field-of-view dispersive microscope objective of claim 1, wherein, The focal length of the dispersion microscopic objective is f, the numerical aperture of the dispersion microscopic objective is NA, and the following relationship is satisfied: 10≤f*NA≤14.

4. The large field-of-view dispersive microscope objective of claim 3, wherein, The focal length of the dispersion microscopic objective is f=40mm, and the numerical aperture is NA=0.

3.

5. The large field-of-view dispersive microscope objective of claim 1, wherein, The focal length of the cemented doublet formed by bonding the first lens and the second lens is f. 12 The third lens has a focal length of f3, and the fourth and fifth lenses are cemented together to form a cemented doublet with a focal length of f. 45 The focal length of the cemented doublet formed by the cementing of the sixth lens and the seventh lens is f. 67 The eighth lens has a focal length of f8, the ninth lens has a focal length of f9, and the dispersive microscope objective has a focal length of f, satisfying the following relationship: -18.20 < f 12 f < -13.50 1.20≤f3 / f≤1.60; -1.80 < f 45 f < -1.40; 10.70 < f 67 f < 7.90; 34.40≤f8 / f≤25.40; 0.80≤f9 / f≤1.

10.

6. The large field-of-view dispersive microscope objective of claim 1, wherein, the first surface of the first lens has a radius of curvature r1, the first surface of the second lens has a radius of curvature r2, the second surface of the second lens has a radius of curvature r3, the first surface of the third lens has a radius of curvature r4, the second surface of the third lens has a radius of curvature r5, the first surface of the fourth lens has a radius of curvature r6, the first surface of the fifth lens has a radius of curvature r7, the second surface of the fifth lens has a radius of curvature r8, the first surface of the sixth lens has a radius of curvature r9, the first surface of the seventh lens has a radius of curvature r 10 , the second surface of the seventh lens has a radius of curvature r 11 , the first surface of the eighth lens has a radius of curvature r 12 , the second surface of the eighth lens has a radius of curvature r 13 , the first surface of the ninth lens has a radius of curvature r 14 , the second surface of the ninth lens has a radius of curvature r 15 , and the following relationships are satisfied: 3.15≤(r1+r2) / (r1-r2)≤4.30; -2.90≤(r2+r3) / (r2-r3)≤-2.15; -1.30≤(r4+r5) / (r4-r5)≤-0.95; 7.40≤(r6+r7) / (r6-r7)≤10.00; 4.90≤(r7+r8) / (r7-r8)≤6.60; -1.40≤(r9+r 10 ) / (r9-r 10 )≤-1.00; 1.10≤(r 10 +r 11 ) / (r 10 -r 11 )≤1.50; 12.20≤(r 12 +r 13 ) / (r 12 -r 13 )≤16.40; -3.00≤(r 14 +r 15 ) / (r 14 -r 15 )≤-2.30。 7. The large field-of-view dispersive microscope objective of claim 1, wherein, The thickness of the first lens is d1, the thickness of the second lens is d2, the thickness of the third lens is d3, the thickness of the fourth lens is d4, the thickness of the fifth lens is d5, the thickness of the sixth lens is d6, the thickness of the seventh lens is d7, the thickness of the eighth lens is d8, the thickness of the ninth lens is d9, and the total length of the dispersion microscopic objective from the first lens to the focusing position is TTL, and the following relationship is satisfied: 0.03≤d1 / TTL≤0.04; 0.08≤d2 / TTL≤0.11; 0.07≤d3 / TTL≤0.10; 0.08≤d4 / TTL≤0.11; 0.03≤d5 / TTL≤0.04; 0.03≤d6 / TTL≤0.04; 0.06≤d7 / TTL≤0.08; 0.06≤d8 / TTL≤0.08; 0.06≤d9 / TTL≤0.

08.

8. The large field-of-view dispersive microscope objective of claim 1, wherein, The interval between the double-cemented lens formed by the first lens and the second lens and the third lens is t1, the interval between the third lens and the double-cemented lens formed by the fourth lens and the fifth lens is t2, the interval between the double-cemented lens formed by the fourth lens and the fifth lens and the double-cemented lens formed by the sixth lens and the seventh lens is t3, the interval between the double-cemented lens formed by the sixth lens and the seventh lens and the eighth lens is t4, the interval between the eighth lens and the ninth lens is t5, and the total length of the dispersion microscopic objective from the first lens to the focusing position is TTL, and the following relationship is satisfied: 0.02≤t1 / TTL≤0.03; 0.02≤t2 / TTL≤0.03; 0.07≤t3 / TTL≤0.10; 0.01≤t4 / TTL≤0.015; 0.03≤t5 / TTL≤0.

04.

9. The large field-of-view dispersive microscope objective of claim 1, wherein, The total length of the dispersion microscopic objective from the first lens to the focusing position is TTL, the back aperture of the dispersion microscopic objective is WD, and the following relationship is satisfied: 0.23 ≤ WD / TTL ≤ 0.

28.

10. The large field-of-view dispersive microscope objective of claim 1, wherein, The first lens has a refractive index of n1, the second lens has a refractive index of n2, the third lens has a refractive index of n3, the fourth lens has a refractive index of n4, the fifth lens has a refractive index of n5, the sixth lens has a refractive index of n6, the seventh lens has a refractive index of n7, the eighth lens has a refractive index of n8, the ninth lens has a refractive index of n9, and the following relational expression is satisfied: 1.60≤n1≤2.00; 1.60≤n2≤2.00; 1.85≤n3≤2.30; 1.60≤n4≤2.00; 1.70≤n5≤2.00; 1.45≤n6≤1.80; 1.80≤n7≤2.20; 1.70≤n8≤2.10; 1.85≤n9≤2.30。