Light-emitting panel and manufacturing method thereof

Abstract

The invention provides a light-emitting panel and a manufacturing method thereof. The light-emitting panel comprises a plurality of epitaxial units, a driving backboard, a metal light blocking structure, a plurality of light gathering structures, a passivation layer and a transparent conductive layer, the plurality of epitaxial unit arrays are distributed on the driving backboard at intervals, the first surfaces of the plurality of epitaxial units are electrically connected with the driving backboard, the passivation layer covers the side walls of the plurality of epitaxial units, the passivation layer comprises first through holes located in the second surfaces of the epitaxial units and second through holes located between the adjacent epitaxial units, the transparent conductive layer covers the passivation layer, and the transparent conductive layer covers the transparent conductive layer. The transparent conductive layer is electrically connected with the driving backboard through the second through hole and is electrically connected with the second surface of the epitaxial unit through the first through hole; the metal light blocking structure is located among the plurality of epitaxial units, the metal light blocking structure comprises a plurality of openings, each opening corresponds to one epitaxial unit, the light gathering structures cover the plurality of epitaxial units, and the plurality of light gathering structures are respectively located in the plurality of openings.

Description

Technical Field

[0001] This disclosure relates to the field of light-emitting devices, and in particular to a light-emitting panel and a method for manufacturing the same. Background Technology

[0002] Micro-LEDs are small in size and can be used to make light-emitting panels with ultra-high resolution.

[0003] The related technology provides a light-emitting panel, which includes multiple miniature light-emitting diodes and a driving backplane. The multiple miniature light-emitting diodes are connected to the driving backplane.

[0004] Due to the small size of the micro-LEDs in the aforementioned light-emitting panel and the close physical distance between them, the light emitted by the micro-LEDs is prone to crosstalk. Furthermore, the connection lines between each micro-LED and the driving backplane are relatively complex. Summary of the Invention

[0005] This disclosure provides a light-emitting panel and its manufacturing method, which can solve the problems of crosstalk between the light emitted from the epitaxial units and the complexity of the circuitry. The technical solution is as follows: On one hand, a light-emitting panel is provided, the light-emitting panel comprising: Multiple epitaxial units, driving backplate, metal light-blocking structure, multiple light-concentrating structure, passivation layer and transparent conductive layer; The plurality of epitaxial cells are spaced apart on the driving backplane. The first surface of the plurality of epitaxial cells is electrically connected to the driving backplane. The passivation layer covers the sidewalls of the plurality of epitaxial cells and includes a first through-hole located on the second surface of the epitaxial cell and a second through-hole located between adjacent epitaxial cells. The transparent conductive layer covers the passivation layer and is electrically connected to the driving backplane through the second through-hole and electrically connected to the second surface of the epitaxial cell through the first through-hole. The metal light-blocking structure is located between the plurality of epitaxial units. The metal light-blocking structure includes a plurality of openings, each of which corresponds to one of the epitaxial units. The light-focusing structure covers the plurality of epitaxial units, and the plurality of light-focusing structures are respectively located within the plurality of openings.

[0006] Optionally, the height of the light-concentrating structure is greater than the height of the metal light-blocking structure, and the portion of the light-concentrating structure that extends above the metal light-blocking structure has a hemispherical cross-section on the first plane; The first plane is a plane perpendicular to the drive backplate.

[0007] Optionally, the light-emitting panel further includes: connecting electrodes; The connecting electrode has a mesh structure, is located between the plurality of epitaxial units, and is located on the transparent conductive layer, and the metal light-blocking structure is located on the connecting electrode.

[0008] Optionally, the connecting electrode includes a first groove, and the metal light-blocking structure is fixed in the first groove.

[0009] Optionally, the width of the first groove is the same as the width of the metal light-blocking structure.

[0010] Optionally, the light-emitting panel further includes a bonding structure, through which the epitaxial unit is bonded to the driving backplate; A step is formed between the bonding structure and the epitaxial unit, and the passivation layer, the transparent conductive layer and the connecting electrode all have corresponding steps at the step of the bonding structure.

[0011] On the other hand, a method for manufacturing a light-emitting panel is provided, the method comprising: Multiple epitaxial units are disposed on a drive backplane, the multiple epitaxial units are arranged in an array at intervals, and the first surface of the multiple epitaxial units is electrically connected to the drive backplane; A passivation layer is fabricated, the passivation layer covering the sidewalls of the plurality of epitaxial cells, and the passivation layer includes a first through-hole located on the second surface of the epitaxial cell and a second through-hole located between adjacent conductive epitaxial cells; A transparent conductive layer is fabricated, which covers the passivation layer, and the transparent conductive layer is electrically connected to the driving backplate through the second through-hole and electrically connected to the second surface of the epitaxial unit through the first through-hole; A metal light-blocking structure is fabricated, the metal light-blocking structure being located between the plurality of epitaxial units, the metal light-blocking structure including a plurality of openings, each opening corresponding to one of the epitaxial units; Multiple light-focusing structures are fabricated, each light-focusing structure covering multiple epitaxial units, and each light-focusing structure is located within a multiple opening.

[0012] Optionally, the fabrication of the metal light-blocking structure includes: Growth of the first dielectric layer; The first dielectric layer is patterned to form a second groove, which is located between adjacent epitaxial units; The metal light-blocking structure is fabricated within the second groove.

[0013] Optionally, the fabrication of multiple light-concentrating structures includes: A second dielectric layer is grown on the first dielectric layer; The second dielectric layer is patterned to form the plurality of light-focusing structures. The portion of the light-focusing structure that extends above the metal light-blocking structure has a hemispherical cross-section on the first plane, which is perpendicular to the drive backplate.

[0014] Optionally, the method further includes: After the transparent conductive layer is fabricated, and before the metal light-blocking structure is fabricated, a connecting electrode is fabricated. The connecting electrode has a mesh structure and is located between the plurality of epitaxial units and on the transparent conductive layer. The metal light-blocking structure is located on the connecting electrode.

[0015] The beneficial effects of the technical solutions provided in this disclosure are: In this embodiment, multiple epitaxial cells are arrayed at intervals on a driving backplane, with the first surface of each epitaxial cell electrically connected to the driving backplane. A passivation layer then covers the sidewalls of the multiple epitaxial cells to protect them and prevent short circuits between them. Simultaneously, the passivation layer forms a first through-hole and a second through-hole on the second surface of each epitaxial cell and between adjacent epitaxial cells. A transparent conductive layer connects to the second surface of the epitaxial cell through the first through-hole and is electrically connected to the driving backplane through the second through-hole, thereby achieving electrical connection between the second surface of the epitaxial cell and the driving backplane. This structure simplifies the connection lines between the light-emitting diodes (epitaxygen cells) and the driving backplane in the light-emitting panel.

[0016] Furthermore, a metal light-blocking structure is set between multiple epitaxial cells. This structure includes multiple openings, each corresponding to one epitaxial cell. This design prevents light crosstalk between the epitaxial cells. Moreover, the metal light-blocking structure is conductive and can be used together with the transparent conductive layer as a common electrode, reducing resistance. A light-focusing structure covers multiple epitaxial cells, with each structure located within a specific opening. This focuses the light emitted by the epitaxial cells, further reducing light crosstalk between them. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of this disclosure; Figure 2This is a flowchart of a method for manufacturing a light-emitting panel according to an embodiment of the present disclosure; Figure 3 This is a flowchart of another method for manufacturing a light-emitting panel provided in this embodiment; Figure 4 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure; Figure 5 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure; Figure 6 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure; Figure 7 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure; Figure 8 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure; Figure 9 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure; Figure 10 This is a structural schematic diagram of the manufacturing process of a light-emitting panel provided in an embodiment of this disclosure.

[0019] The attached figures are labeled as follows: 100: Epitaxial unit; 200: Driving backplate; 300: Metal light-blocking structure; 400: Light-concentrating structure; 500: Passivation layer; 600: Transparent conductive layer; 700: Connecting electrode; 800: Bonding structure; 900: First contact layer; 910: Second contact layer; 201: Contact electrode; 301: Opening; 401: Extensional structure; 1001: First through hole; 1002: Second through hole; 2001: First groove; 2002: Second groove; 3001: Protrusion. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0021] Figure 1 This is a schematic diagram of the structure of a light-emitting panel provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting panel includes: multiple epitaxial units 100, a driving backplate 200, a metal light-blocking structure 300, multiple light-concentrating structures 400, a passivation layer 500, and a transparent conductive layer 600.

[0022] Multiple epitaxial cells 100 are arrayed and spaced on a driving backplate 200. The first surface of the multiple epitaxial cells 100 is electrically connected to the driving backplate 200. A passivation layer 500 covers the sidewalls of the multiple epitaxial cells 100. The passivation layer 500 includes a first through-hole 1001 located on the second surface of the epitaxial cells 100 and a second through-hole 1002 located between adjacent epitaxial cells 100. A transparent conductive layer 600 covers the passivation layer 500. The transparent conductive layer 600 is electrically connected to the driving backplate 200 through the second through-hole 1002 and electrically connected to the second surface of the epitaxial cells 100 through the first through-hole 1001.

[0023] The metal light-blocking structure 300 is located between multiple epitaxial units 100. The metal light-blocking structure 300 includes multiple openings 301, each opening 301 corresponding to one epitaxial unit 100. The light-concentrating structure 400 covers multiple epitaxial units 100, and the multiple light-concentrating structures 400 are respectively located in multiple openings 301.

[0024] In this embodiment, multiple epitaxial cells are arrayed at intervals on a driving backplane, with the first surface of each epitaxial cell electrically connected to the driving backplane. A passivation layer then covers the sidewalls of the multiple epitaxial cells to protect them and prevent short circuits between them. Simultaneously, the passivation layer forms a first through-hole and a second through-hole on the second surface of each epitaxial cell and between adjacent epitaxial cells. A transparent conductive layer connects to the second surface of the epitaxial cell through the first through-hole and is electrically connected to the driving backplane through the second through-hole, thereby achieving electrical connection between the second surface of the epitaxial cell and the driving backplane. This structure simplifies the connection lines between the light-emitting diodes (epitaxygen cells) and the driving backplane in the light-emitting panel.

[0025] Furthermore, a metal light-blocking structure is set between multiple epitaxial cells. This structure includes multiple openings, each corresponding to one epitaxial cell. This design prevents light crosstalk between the epitaxial cells. Moreover, the metal light-blocking structure is conductive and can be used together with the transparent conductive layer as a common electrode, reducing resistance. A light-focusing structure covers multiple epitaxial cells, with each structure located within a specific opening. This focuses the light emitted by the epitaxial cells, further reducing light crosstalk between them.

[0026] In this embodiment of the disclosure, the light-emitting panel can be a display panel.

[0027] In this embodiment of the disclosure, the epitaxial unit 100 includes a first semiconductor layer, an active layer and a second semiconductor layer stacked sequentially, with the first semiconductor layer being away from the driving backplane 200 and the second semiconductor layer being close to the driving backplane 200.

[0028] In this embodiment of the disclosure, the first semiconductor layer may be an N-type semiconductor layer, and the second semiconductor layer may be a P-type semiconductor layer.

[0029] For example, the first semiconductor layer can be an N-type GaN layer, and the second semiconductor layer can be a P-type GaN layer.

[0030] In other embodiments, the first semiconductor layer may be a P-type semiconductor layer and the second semiconductor layer may be an N-type semiconductor layer.

[0031] In this embodiment of the disclosure, the active layer can be a multi-quantum well layer, for example, the multi-quantum well layer can be an InGaN / GaN multi-quantum well structure.

[0032] In this embodiment of the disclosure, the driving backplane 200 can be a complementary metal oxide semiconductor (COMS) driving board.

[0033] In this embodiment, the metal light-blocking structure 300 can be a silver metal light-blocking structure or other reflective metal light-blocking structures; the light-concentrating structure 400 can be an organic transparent material light-concentrating structure or an inorganic passivated material light-concentrating structure.

[0034] For example, the metal light-blocking structure 300 can be a silver metal light-blocking structure, and the light-concentrating structure 400 can be an organic transparent material light-concentrating structure.

[0035] In this embodiment, the height of the light-concentrating structure 400 is greater than the height of the metal light-blocking structure 300, and the portion of the light-concentrating structure 400 that extends beyond the metal light-blocking structure 300 has a hemispherical cross-section on the first plane.

[0036] In this embodiment, the light-concentrating structure 400 includes two layers: a first dielectric layer located within the metal light-blocking structure 300, and a second dielectric layer located outside the metal light-blocking structure 300. The first dielectric layer has a planar structure with a shape identical to the individual cells of the metal light-blocking structure 300. The second dielectric layer has a hemispherical structure.

[0037] The first plane is a plane perpendicular to the drive backplate 200.

[0038] In this implementation, the height of the light-concentrating structure is higher than that of the metal light-blocking structure, and the part that is higher than the metal light-blocking structure has a hemispherical cross-section on the first plane. This allows the light to propagate within the metal light-blocking structure without being affected by the light-concentrating structure, while the hemispherical shape can concentrate the light when it is outside the metal light-blocking structure, thus achieving an anti-crosstalk effect and reducing light crosstalk between pixels of the light-emitting panel.

[0039] In this embodiment of the disclosure, the passivation layer 500 can be a SiO2 passivation layer.

[0040] In another example, the passivation layer 500 can also be a SiN layer.

[0041] In this embodiment of the disclosure, the transparent conductive layer 600 can be an indium tin oxide (ITO) layer. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0042] In this embodiment of the disclosure, the light-emitting panel further includes a connecting electrode 700.

[0043] The connecting electrode 700 has a mesh structure and is located between multiple epitaxial units 100 and on the transparent conductive layer 600. The metal light-blocking structure 300 is located on the connecting electrode 700.

[0044] In this implementation, the connecting electrodes of the mesh structure are located between multiple epitaxial units, which can further prevent light crosstalk between multiple epitaxial units; the connecting electrodes are located between the transparent conductive layer and the metal light-blocking structure, which can further reduce the resistance.

[0045] like Figure 1 As shown, the connecting electrode 700 includes a first groove 2001, and a metal light-blocking structure 300 is fixed in the first groove 2001.

[0046] In this implementation, the connecting electrode includes a first groove, and a metal light-blocking structure is fixed in the first groove, which can make the connection between the metal light-blocking structure and the connecting electrode more stable, increase the mechanical strength of the light-emitting panel, and improve the yield of the light-emitting panel.

[0047] In this embodiment, the first groove 2001 can be mesh-like, and correspondingly, the metal light-blocking structure 300 is also mesh-like. The orthographic projection of each cell of the mesh onto the driving substrate can be rectangular, and the orthographic projection of each epitaxial cell located within the rectangle onto the driving substrate can be circular.

[0048] In this embodiment of the disclosure, the width of the first groove 2001 is the same as the width of the metal light-blocking structure 300.

[0049] In this implementation, the width of the first groove is the same as the width of the metal light-blocking structure, which allows the metal light-blocking structure to be more firmly set in the first groove.

[0050] In this embodiment of the disclosure, the connecting electrode 700 may be an electrode formed of at least one of Cr, Pt and Au, or an electrode composed of a stack of at least two of them.

[0051] In this embodiment of the disclosure, the light-emitting panel further includes a bonding structure 800, through which the epitaxial unit 100 is bonded to the driving backplate 200.

[0052] A step is formed between the bonding structure 800 and the epitaxial unit 100. The passivation layer 500, the transparent conductive layer 600 and the connecting electrode 700 all have corresponding steps at the step of the bonding structure 800.

[0053] In this implementation, the epitaxial unit is bonded to the driving backplane via the bonding structure, achieving electrical connection between the first surface of the epitaxial unit and the driving backplane. A step is formed between the bonding structure and the epitaxial unit to ensure that the bonding structure area is large enough and the bonding effect is good. Correspondingly, the passivation layer, the transparent conductive layer, and the connecting electrode all have corresponding steps at the steps of the bonding structure to ensure the adhesion effect between the above layers and the bonding structure.

[0054] In this embodiment of the disclosure, the bonding structure 800 can be a Cr layer, Ti layer, Ni layer, Al layer, Pt layer, Au layer or Sn layer.

[0055] Alternatively, it can be an alloy structure composed of any combination of Cr, Ti, Ni, Al, Pt, Au, and Sn layers.

[0056] For example, the bonding structure 800 is an alloy layer composed of a Ti layer, a Pt layer, an Au layer and a Sn layer.

[0057] In this embodiment of the disclosure, the light-emitting panel further includes: a first contact layer 900 and a second contact layer 910.

[0058] The first contact layer 900 is located on the second surface of the epitaxial unit 100 and between the transparent conductive layer 600 and the second surface of the epitaxial unit 100. The second contact layer 910 is located on the first surface of the epitaxial unit 100 and between the bonding structure 800 and the first surface of the epitaxial unit 100.

[0059] In this embodiment of the disclosure, the first contact layer 900 may be a metal thin film layer or an ITO layer.

[0060] For example, the first contact layer 900 is an ITO layer.

[0061] In this embodiment of the disclosure, the second contact layer 910 may be a metal thin film layer or an ITO layer.

[0062] For example, the second contact layer 910 is an ITO layer.

[0063] In this embodiment of the disclosure, the drive backplane 200 includes a plurality of contact electrodes 201.

[0064] Multiple contact electrodes 201 correspond to multiple epitaxial units 100 and are electrically connected to the corresponding bonding structures 800 of the multiple epitaxial units 100.

[0065] In this embodiment of the disclosure, the contact electrode 201 may be an electrode composed of a stack of Cr, Pt and Au.

[0066] like Figure 1 As shown, the transparent conductive layer 600 is positioned between the epitaxial cells 100 and contacts the driving backplate 200, allowing it to connect to the circuitry within the driving backplate 200. Furthermore, the transparent conductive layer 600, acting as a common electrode, can simultaneously contact the driving backplate 200 through the gaps between multiple epitaxial cells 100, thereby improving conductivity.

[0067] Optionally, the metal light-blocking structure 300 can also be electrically connected to the circuitry of the driving backplate 200 at the edge of the light-emitting panel to further enhance the electrical connection performance.

[0068] like Figure 1 As shown, in a plane perpendicular to the surface of the drive backplate 200 and perpendicular to one side of a cell of the metal light-blocking structure 300, the cross section of the connecting electrode 700 includes two protrusions 3001 located in the first groove 2001. The two protrusions 3001 can not only limit the position of the metal light-blocking structure 300, but also reflect light.

[0069] In one example, both of the above protrusions 3001 are triangular. The triangular protrusions can limit the movement, and the inclined surface of the triangle can reflect light better.

[0070] like Figure 1 As shown, the tops of the two protrusions 3001 are flush with the second surface of the epitaxial unit.

[0071] Figure 2 This is a flowchart illustrating a method for manufacturing a light-emitting panel according to an embodiment of this disclosure. See also... Figure 2 The method includes the following steps: S11: Multiple epitaxial units are disposed on the drive backplane, the multiple epitaxial units are arranged in an array at intervals, and the first surface of the multiple epitaxial units is electrically connected to the drive backplane.

[0072] S12: Fabricate a passivation layer, the passivation layer covering the sidewalls of the plurality of epitaxial units, and the passivation layer includes a first through-hole located on the second surface of the epitaxial unit and a second through-hole located between adjacent epitaxial units.

[0073] S13: Fabricate a transparent conductive layer, which covers the passivation layer, and the transparent conductive layer is electrically connected to the drive backplane through the second through-hole, and electrically connected to the second surface of the epitaxial unit through the first through-hole.

[0074] S14. Fabricate a metal light-blocking structure, wherein the metal light-blocking structure is located between the plurality of epitaxial units, and the metal light-blocking structure includes a plurality of openings, each of the openings corresponding to one of the epitaxial units.

[0075] S15. Fabricate multiple light-focusing structures, each light-focusing structure covering multiple epitaxial units, and the multiple light-focusing structures are respectively located within the multiple openings.

[0076] In this embodiment, multiple epitaxial cells are arrayed at intervals on a driving backplane, with the first surface of each epitaxial cell electrically connected to the driving backplane. A passivation layer then covers the sidewalls of the multiple epitaxial cells to protect them and prevent short circuits between them. Simultaneously, the passivation layer forms a first through-hole and a second through-hole on the second surface of each epitaxial cell and between adjacent epitaxial cells. A transparent conductive layer connects to the second surface of the epitaxial cell through the first through-hole and is electrically connected to the driving backplane through the second through-hole, thereby achieving electrical connection between the second surface of the epitaxial cell and the driving backplane. This structure simplifies the connection lines between the light-emitting diodes (epitaxygen cells) and the driving backplane in the light-emitting panel.

[0077] Furthermore, a metal light-blocking structure is set between multiple epitaxial cells. This structure includes multiple openings, each corresponding to one epitaxial cell. This design prevents light crosstalk between the epitaxial cells. Moreover, the metal light-blocking structure is conductive and can be used together with the transparent conductive layer as a common electrode, reducing resistance. A light-focusing structure covers multiple epitaxial cells, with each structure located within a specific opening. This focuses the light emitted by the epitaxial cells, further reducing light crosstalk between them.

[0078] Figure 3 This is a flowchart illustrating another method for manufacturing a light-emitting panel according to an embodiment of this disclosure. See also... Figure 3 The method includes the following steps: S21. A first semiconductor layer, an active layer, a second semiconductor layer, and a conductive layer are sequentially formed on a substrate, and the first semiconductor layer, the active layer, and the second semiconductor layer constitute an epitaxial structure.

[0079] The substrate can be any one of the following: a patterned sapphire substrate, a Si substrate, or a SiC substrate.

[0080] In one example, step S21 includes: The first step is to fabricate the first semiconductor layer.

[0081] In this embodiment of the disclosure, the first semiconductor layer is an N-type GaN layer.

[0082] The second step is to create the active layer.

[0083] In this embodiment of the disclosure, the active layer is a multi-quantum well layer, for example, the multi-quantum well layer can be an InGaN / GaN multi-quantum well structure.

[0084] The third step is to fabricate the second semiconductor layer.

[0085] In this embodiment of the disclosure, the second semiconductor layer is a P-type GaN layer.

[0086] In this embodiment of the present disclosure, a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate.

[0087] S22. A second contact layer is formed on the surface of the second semiconductor layer.

[0088] In this embodiment of the disclosure, the second contact layer may be a metal layer or an ITO layer.

[0089] For example, the second contact layer is an ITO layer.

[0090] S23. Provide a drive backplane and fabricate a bonding structure on the drive backplane.

[0091] In this embodiment of the disclosure, the drive backplate includes contact electrodes.

[0092] In this embodiment of the disclosure, the driving backplane can be a CMOS driving board.

[0093] In this embodiment of the disclosure, the contact electrode may be an electrode formed of at least one of Cr, Pt and Au, or an electrode composed of a stack of at least two of them.

[0094] In the embodiments disclosed herein, the bonding structure may be a Cr layer, a Ti layer, a Ni layer, an Al layer, a Pt layer, an Au layer, or a Sn layer.

[0095] Alternatively, it can be an alloy structure composed of any combination of Cr, Ti, Ni, Al, Pt, Au, and Sn layers.

[0096] For example, the bonding structure is an alloy layer composed of a Ti layer, a Pt layer, an Au layer, and a Sn layer.

[0097] S24. Connect the epitaxial structure to the driving backplane through a bonding structure, and peel off the substrate.

[0098] Figure 4 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 4 The epitaxial structure 401 and the second contact layer 910 are connected to the drive backplate 200 through the bonding structure 800.

[0099] S25. The epitaxial structure, the second contact layer, and the bonding structure are graphically processed to form multiple epitaxial units and bonding structures corresponding to the multiple epitaxial units.

[0100] In this embodiment of the disclosure, an epitaxial structure, a second contact layer, and a bonding structure are patterned by inductively coupled plasma (ICP) etching to form multiple epitaxial units and bonding structures corresponding to the multiple epitaxial units.

[0101] In the embodiments disclosed herein, different etching gases may be used to etch the epitaxial structure, the second contact layer, and the bonding structure.

[0102] Figure 5 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 5 ,exist Figure 4 Based on the epitaxial structure 401, the second contact layer 910 and the bonding structure 800, a pattern is formed to create multiple epitaxial units 100, and a step is formed between the bonding structure 800 and the epitaxial units 100.

[0103] S26. Fabricate the first contact layer, which is located on the second surface of the epitaxial cell.

[0104] In one example, step S26 includes: The first step is to fabricate the first contact film.

[0105] In this embodiment of the disclosure, the first contact film may be a metal film or an ITO film.

[0106] For example, the first contact film is a metal film.

[0107] The second step is to pattern the first contact film to form the first contact layer.

[0108] In this embodiment of the disclosure, a first contact layer is formed by etching the first contact film.

[0109] Figure 6 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 6 The first contact layer 900 is located on the second surface of the epitaxial unit 100.

[0110] S27. A passivation layer is fabricated, which covers the sidewalls of multiple epitaxial cells, and includes a first through-hole located on the second surface of the epitaxial cell and a second through-hole located between adjacent epitaxial cells.

[0111] In one example, step S27 includes: The first step is to fabricate a passivation film, which covers the epitaxial cell.

[0112] In this embodiment of the disclosure, the passivation film can be a SiO2 passivation layer.

[0113] In another example, the passivation film can also be a SiN layer.

[0114] The second step is to pattern the passivation film to form a passivation layer.

[0115] In this embodiment of the disclosure, the passivation layer patterning includes: a first via located on the second surface of the epitaxial cell and a second via located between adjacent epitaxial cells.

[0116] Figure 7 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 7 The passivation layer 500 covers the epitaxial unit 100. The passivation layer 500 includes a first through-hole 1001 located on the second surface of the epitaxial unit 100, and a second through-hole 1002 located between adjacent epitaxial units 100. The passivation layer 500 has a corresponding step at the step of the bonding structure 800.

[0117] S28. Fabricate a transparent conductive layer, which covers the passivation layer. The transparent conductive layer is electrically connected to the drive backplane through the second through-hole and electrically connected to the conductive layer on the epitaxial unit through the first through-hole.

[0118] In this embodiment, the transparent conductive layer can be an ITO layer. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0119] Figure 8 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 8 The transparent conductive layer 600 covers the passivation layer 500, the epitaxial unit 100 and the driving backplate 200, and the transparent conductive layer 600 has a corresponding step at the step of the bonding structure 800.

[0120] S29. Fabricate connecting electrodes. The connecting electrodes have a mesh structure and are located between multiple epitaxial units and on a transparent conductive layer.

[0121] In this embodiment of the disclosure, the connecting electrode can be an electrode composed of a stack of Cr, Pt and Au.

[0122] In one example, step S29 includes: The first step is to grow a photoresist layer.

[0123] The second step is to pattern the photoresist layer to form a photoresist mask with grooves located between adjacent epitaxial units.

[0124] The third step is to vapor deposit the connecting electrode material, which covers the surface of the photoresist mask and the grooves.

[0125] The fourth step is to remove the photoresist mask and the connecting electrode material on its surface, leaving the connecting electrode material in the groove to obtain the connecting electrode.

[0126] Figure 9 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 9 The connecting electrode 700 is located between multiple epitaxial units 100 and on the transparent conductive layer 600. The connecting electrode 700 has a corresponding step at the step of the bonding structure 800.

[0127] S30. Fabricate a metal light-blocking structure. The metal light-blocking structure is located between multiple epitaxial units. The metal light-blocking structure includes multiple openings, and each opening corresponds to an epitaxial unit.

[0128] In one example, step S30 includes: The first step is to grow the first medium layer.

[0129] The second step is to perform patterning on the first dielectric layer to form a second groove, which is located between adjacent epitaxial cells.

[0130] The third step is to grow a photoresist layer on the first dielectric layer.

[0131] The fourth step is to pattern the photoresist layer to form a photoresist mask with grooves, and the grooves are connected to the second groove.

[0132] The fifth step is to vapor-deposit a metal light-blocking material, which covers the surface of the photoresist mask and the second groove.

[0133] Step 6: Remove the photoresist mask and the metal light-blocking material on its surface, leaving the metal light-blocking material in the second groove, to obtain the metal light-blocking structure.

[0134] Figure 10 This is a structural schematic diagram illustrating the manufacturing process of a light-emitting panel according to an embodiment of this disclosure. See also... Figure 10 The metal light-blocking structure 300 is located within the second groove 2002.

[0135] S31. Fabricate multiple light-focusing structures, each covering multiple epitaxial units, with each light-focusing structure located within a multiple opening.

[0136] In one example, step S31 includes: The first step is to grow a second dielectric layer on the first dielectric layer.

[0137] The second step involves patterning the second dielectric layer to form multiple light-focusing structures. The portion of the light-focusing structure that extends above the metal light-blocking structure has a hemispherical cross-section on the first plane, which is perpendicular to the drive backplate.

[0138] That is, the final light-concentrating structure includes a first dielectric layer for making a metal light-blocking structure, and a second dielectric layer for subsequent growth.

[0139] In this implementation, the height of the light-concentrating structure is higher than that of the metal light-blocking structure, and the part that is higher than the metal light-blocking structure has a hemispherical cross-section on the first plane. This allows the light to propagate within the metal light-blocking structure without being affected by the light-concentrating structure, while the hemispherical shape can concentrate the light when it is outside the metal light-blocking structure, thus achieving an anti-crosstalk effect and reducing light crosstalk between pixels of the light-emitting panel.

[0140] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light-emitting panel, characterized in that, The light-emitting panel includes: multiple epitaxial units (100), a driving backplate (200), a metal light-blocking structure (300), multiple light-concentrating structures (400), a passivation layer (500), and a transparent conductive layer (600). The plurality of epitaxial cells (100) are arrayed at intervals on the driving backplate (200). The first surface of the plurality of epitaxial cells (100) is electrically connected to the driving backplate (200). The passivation layer (500) covers the sidewalls of the plurality of epitaxial cells (100). The passivation layer (500) includes a first through-hole (1001) located on the second surface of the epitaxial cell (100) and a second through-hole (1002) located between adjacent epitaxial cells (100). The transparent conductive layer (600) covers the passivation layer (500). The transparent conductive layer (600) is electrically connected to the driving backplate (200) through the second through-hole (1002) and electrically connected to the second surface of the epitaxial cell (100) through the first through-hole (1001). The metal light-blocking structure (300) is located between the plurality of epitaxial units (100). The metal light-blocking structure (300) includes a plurality of openings (301), each of the openings (301) corresponding to one of the epitaxial units (100). The light-concentrating structure (400) covers the plurality of epitaxial units (100), and the plurality of light-concentrating structures (400) are respectively located within the plurality of openings (301).

2. The light-emitting panel according to claim 1, characterized in that, The height of the light-concentrating structure (400) is greater than the height of the metal light-blocking structure (300), and the portion of the light-concentrating structure (400) that extends above the metal light-blocking structure (300) has a hemispherical cross-section on the first plane. The first plane is a plane perpendicular to the drive backplate (200).

3. The light-emitting panel according to claim 1 or 2, characterized in that, The light-emitting panel also includes: a connecting electrode (700); The connecting electrode (700) has a mesh structure. The connecting electrode (700) is located between the plurality of epitaxial units (100) and on the transparent conductive layer (600). The metal light-blocking structure (300) is located on the connecting electrode (700).

4. The light-emitting panel according to claim 3, characterized in that, The connecting electrode (700) includes a first groove (2001), and the metal light-blocking structure (300) is fixed in the first groove (2001).

5. The light-emitting panel according to claim 4, characterized in that, The width of the first groove (2001) is the same as the width of the metal light-blocking structure (300).

6. The light-emitting panel according to claim 3, characterized in that, The light-emitting panel further includes a bonding structure (800), through which the epitaxial unit (100) is bonded to the driving backplate (200); A step is formed between the bonding structure (800) and the epitaxial unit (100), and the passivation layer (500), the transparent conductive layer (600) and the connecting electrode (700) all have corresponding steps at the step of the bonding structure (800).

7. A method for manufacturing a light-emitting panel, characterized in that, The method includes: Multiple epitaxial units are disposed on a drive backplane, the multiple epitaxial units are arranged in an array at intervals, and the first surface of the multiple epitaxial units is electrically connected to the drive backplane; A passivation layer is fabricated, the passivation layer covering the sidewalls of the plurality of epitaxial cells, and the passivation layer includes a first through-hole located on the second surface of the epitaxial cell and a second through-hole located between adjacent epitaxial cells; A transparent conductive layer is fabricated, which covers the passivation layer, and the transparent conductive layer is electrically connected to the driving backplate through the second through-hole and electrically connected to the second surface of the epitaxial unit through the first through-hole; A metal light-blocking structure is fabricated, the metal light-blocking structure being located between the plurality of epitaxial units, the metal light-blocking structure including a plurality of openings, each opening corresponding to one of the epitaxial units; Multiple light-focusing structures are fabricated, each light-focusing structure covering multiple epitaxial units, and each light-focusing structure is located within a multiple opening.

8. The method for manufacturing a light-emitting panel according to claim 7, characterized in that, The fabrication of the metal light-blocking structure includes: Growth of the first dielectric layer; The first dielectric layer is patterned to form a second groove, which is located between adjacent epitaxial units; The metal light-blocking structure is fabricated within the second groove.

9. The method for manufacturing a light-emitting panel according to claim 8, characterized in that, The fabrication of multiple light-concentrating structures includes: A second dielectric layer is grown on the first dielectric layer; The second dielectric layer is patterned to form the plurality of light-focusing structures. The portion of the light-focusing structure that extends above the metal light-blocking structure has a hemispherical cross-section on the first plane, which is perpendicular to the drive backplate.

10. The method for manufacturing a light-emitting panel according to claim 7 or 8, characterized in that, The method further includes: After the transparent conductive layer is fabricated, and before the metal light-blocking structure is fabricated, a connecting electrode is fabricated. The connecting electrode has a mesh structure and is located between the plurality of epitaxial units and on the transparent conductive layer. The metal light-blocking structure is located on the connecting electrode.

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