Ultrathin wafer laser processing method, device and equipment and readable storage medium

Abstract

The invention discloses a laser processing method, device and equipment for an ultrathin wafer and a readable storage medium, and relates to the technical field of wafer processing, and the laser processing method comprises the steps that a wafer to be processed is fixed to a carrying table; the surface appearance of the to-be-machined surface is detected, and warping data are obtained; the to-be-machined face is partitioned according to the scanning breadth of the laser machining module, and a plurality of machining areas are obtained; based on the warping data, Z-direction compensation values corresponding to all the machining areas are calculated; before one machining area is machined every time, the laser machining module is controlled to adjust the laser focal length according to the Z-direction compensation value; and the laser processing module with the focal length adjusted is used for processing each processing area in sequence. The invention aims to solve the problems of low processing efficiency and capacity waste during large-size ultrathin wafer back laser coding.

Description

Technical Field

[0001] This invention relates to the field of wafer fabrication technology, and in particular to a laser processing method, apparatus, equipment, and readable storage medium for ultrathin wafers. Background Technology

[0002] With the continuous advancement of semiconductor manufacturing technology, large-size (8-12 inches) and ultra-thin (0.2-0.5 mm) wafers are increasingly widely used in integrated circuit packaging. In the back-end processes of wafer manufacturing, laser marking is often performed on the back of the wafer to achieve product traceability and information management. However, due to the extremely thin thickness of the wafer, it is highly susceptible to severe warping deformation under its own weight and the stress of the processing, posing a significant challenge to the positioning accuracy and focusing quality of laser processing.

[0003] For laser marking on the back of large, ultra-thin wafers, the industry and various manufacturers generally adopt the mature quadrant support rotation method. Specifically, this method uses a quadrant support base to hollow out and support the back of the wafer, aiming to minimize warping caused by the manufacturing process and the gravity of the hollowed-out back, as well as the resulting X / Y / Z direction offset errors. In actual processing, after laser marking in the first quadrant of the wafer is completed, the quadrant support base is rotated to expose the back of the wafer in the second quadrant. The laser system then marks the second quadrant, and so on, completing the processing of the third and fourth quadrants sequentially. Similarly, other types of support structures, such as rod-shaped pins or flanges, can also be used in conjunction with rotation to achieve zoned processing.

[0004] While the aforementioned quadrant support method effectively controls errors caused by wafer deformation and ensures processing quality, it suffers from significant efficiency bottlenecks when applied to mass production equipment. This method requires rotating the support after each quadrant is processed and then re-vacuum adsorption to ensure stability. This process involves mechanical motion and gas path response, and is time-consuming. In large-scale production environments, frequent rotation operations and repetitive vacuum adsorption processes result in substantial non-processing time wastage, leading to reduced overall equipment operating efficiency and significant capacity waste. Summary of the Invention

[0005] The main objective of this invention is to propose a laser processing method, apparatus, equipment, and readable storage medium for ultrathin wafers, aiming to solve the problems of low processing efficiency and wasted production capacity when laser marking the back of large-size ultrathin wafers.

[0006] To achieve the above objectives, the present invention proposes a laser processing method for ultrathin wafers, comprising: Fix the wafer to be processed onto the stage; The surface morphology of the surface to be processed is detected to obtain warpage data; The surface to be processed is divided into multiple processing areas based on the scanning area of ​​the laser processing module; Based on the warping data, calculate the Z-axis compensation value for each of the processing areas; Before processing each of the aforementioned processing areas, the laser processing module is controlled to adjust the laser focal length according to the Z-axis compensation value; The laser processing module with its focal length adjusted is used to process each processing area sequentially.

[0007] In one embodiment, the step of detecting the surface morphology of the surface to be processed and obtaining warpage data includes: Based on the effective measurement field of view of the laser ranging module's probe and the geometric parameters of the surface to be processed, a scanning trajectory covering the surface to be processed is planned; The probe of the laser ranging module is controlled to move along the scanning trajectory, and during the movement, the distance between the probe of the laser ranging module and multiple measurement points on the surface to be processed is continuously collected to obtain multiple actual distance parameters; Based on the preset standard distance parameters, the difference between each actual distance parameter and the standard distance parameter is calculated to obtain multiple actual differences; the multiple actual differences are the warping data.

[0008] In one embodiment, the step of calculating the Z-axis compensation value corresponding to each of the processing areas based on the warp data includes: Extract all actual differences and the number of actual differences within each processing area; Based on the actual difference and the number of actual differences, calculate the average distance for each processing area; the average distance is the Z-axis compensation value parameter.

[0009] In one embodiment, the step of calculating the average distance of each of the processing areas based on the actual difference and the number of actual differences includes: Obtain the planar position coordinates of each measurement point within the processing area and the corresponding actual difference; Based on the planar position coordinates and the actual difference, the least squares method is used to fit a fitted plane equation that characterizes the warping trend of the processing area. Determine the coordinates of the geometric center of the processing area; Substitute the coordinates of the geometric center into the equation of the fitting plane to calculate the fitting height value at the geometric center. The fitted height value is determined as the average distance of the processing area.

[0010] In one embodiment, the surface to be processed is a circular region; the step of planning a scanning trajectory covering the surface to be processed based on the effective measurement field of view of the laser ranging module's probe and the geometric parameters of the surface to be processed includes: Based on preset angle interval parameters, multiple diameter scan lines are determined with the center of the circular region as the rotation center; wherein, the multiple diameter scan lines are evenly distributed along the circumference of the circular region, and both ends of each diameter scan line extend to the edge of the circular region; According to the circumferential distribution order of the multiple diameter scan lines, the diameter scan lines are sequentially connected to form the scan trajectory.

[0011] In one embodiment, the step of dividing the surface to be processed into multiple processing areas based on the scanning area of ​​the laser processing module includes: Determine the effective scanning area of ​​the laser processing system to obtain the effective scanning area parameters; Based on the effective scanning area parameters and the geometric parameters of the surface to be processed, the number of processing areas required to cover the surface to be processed is calculated, and the number of processing areas is obtained. According to the partitioning rule parameters that adapt to the shape of the surface to be processed, the surface to be processed is sequentially divided into multiple processing areas according to the number of processing areas parameter.

[0012] In one embodiment, the laser processing module includes: A laser emitter, used to emit a laser beam; A beam expander is located at the light-emitting end of the laser emitter and is used to expand the laser beam. A lens assembly is movable along the Z-axis. The lens assembly includes a galvanometer and a field lens. The galvanometer is located at the light-emitting end of the beam expander and is used to deflect the laser beam. The field lens is located at the light-emitting end of the galvanometer and is used to vertically focus the laser beam deflected by the galvanometer onto the surface to be processed of the wafer.

[0013] The present invention also provides a laser processing apparatus, comprising: A wafer fixing module is used to fix the wafer to be processed onto the carrier stage; The region division module is used to divide the surface to be processed into multiple processing regions based on the scanning area of ​​the laser processing module. The detection module is used to detect the surface morphology of the surface to be processed and obtain warpage data; The compensation calculation module is used to calculate the Z-axis compensation value corresponding to each of the processing areas based on the warping data. The control module is used to control the laser processing module to adjust the laser focal length according to the Z-axis compensation value before processing each processing area; and to use the laser processing module with the adjusted focal length to process each processing area sequentially.

[0014] The present invention also provides a laser processing apparatus, comprising: a memory, a processor, and a laser processing program stored in the memory and executable on the processor, the laser processing program being configured to implement the steps of the laser processing method as described in any one of claims 1 to 7. The present invention also provides a readable storage medium storing a laser processing program, which, when executed by a processor, implements the steps of the laser processing method as described in any one of claims 1 to 7.

[0015] The laser processing method for ultrathin wafers provided by this invention can solve the problems of low processing efficiency and wasted production capacity when laser marking the back of large-size ultrathin wafers by adopting a processing strategy of fixed stage combined with surface morphology detection and partitioned focal length compensation, while taking into account the impact of wafer warpage on laser focusing quality and positioning accuracy. Specifically, the wafer to be processed is first fixed on the stage, without the need to rotate the stage or support structure, thus avoiding mechanical rotation and repeated vacuum adsorption processes. Next, the surface morphology of the surface to be processed is detected to obtain warpage data, allowing for an understanding of the wafer's deformation due to its own weight and process stress. Then, the surface to be processed is divided into multiple processing areas based on the scanning area of ​​the laser processing module. These areas are determined by the laser scanning capability, eliminating the need for mechanical partitioning methods that rely on quadrant supports. Based on the warpage data, the Z-axis compensation value for each processing area is calculated, and a personalized focal length compensation scheme is developed for each area's warpage degree. Before processing each processing area, the laser processing module adjusts the laser focal length according to the Z-axis compensation value, dynamically adjusting the focal length to adapt to the wafer's warpage deformation. Finally, the laser processing module with the adjusted focal length processes each processing area sequentially, completing the processing of all areas entirely on the fixed stage. This feature of fixing the wafer to be processed on the stage completely eliminates the frequent support rotation and repeated vacuum adsorption processes in existing methods, significantly reducing non-processing time waste and significantly improving the overall operating efficiency and capacity of the equipment. The feature of detecting surface morphology to obtain warpage data, calculating the Z-axis compensation value of each region and adjusting the laser focal length can specifically compensate for the Z-axis offset error caused by wafer warpage, ensuring laser focusing quality and positioning accuracy, and solving the challenge of ultra-thin wafer warpage to processing accuracy. Based on the feature of laser scanning area partitioning, the partitioning method is more in line with the performance of the laser processing module, avoiding the mechanical limitations of quadrant partitioning, and further optimizing the continuity and efficiency of the processing flow. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0017] Figure 1 This is a schematic flowchart of a first embodiment of a laser processing method according to the present invention; Figure 2 This is a schematic flowchart of a second embodiment of a laser processing method according to the present invention; Figure 3 This is a schematic flowchart of a third embodiment of a laser processing method according to the present invention; Figure 4 This is a schematic flowchart of a fourth embodiment of a laser processing method according to the present invention; Figure 5 This is a schematic flowchart of the fifth embodiment of a laser processing method according to the present invention; Figure 6 This is a schematic flowchart of the sixth embodiment of a laser processing method according to the present invention; Figure 7 This is a structural block diagram of the first embodiment of the laser processing apparatus of the present invention; Figure 8 This is a schematic diagram of the structure of a laser processing equipment in the hardware operating environment of an embodiment of the present invention.

[0018] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0019] It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the invention. (See also...) Figure 8 , Figure 8 This is a schematic diagram of the structure of a laser processing equipment in the hardware operating environment involved in an embodiment of the present invention.

[0020] like Figure 8As shown, the laser processing equipment may include: a processor 1001 (i.e., a central controller PLC), a communication bus 1002, a user interface 1003, a network interface 1004, a memory 1005, and a motion control module (not shown in the figure). The communication bus 1002 is used to enable communication between these components. The user interface 1003 may include a display screen (i.e., a touch screen) and input units such as touch buttons. Optionally, the user interface 1003 may also include standard wired interfaces and wireless interfaces (such as RS485 interfaces). The network interface 1004 may optionally include standard wired interfaces and wireless interfaces (such as Ethernet interfaces and Wi-Fi interfaces) for data interaction with peripherals such as laser ranging modules and vision modules. The memory 1005 may be a high-speed random access memory (RAM) or a stable non-volatile memory (NVM), such as an industrial-grade SD card or a solid-state drive. Optionally, the memory 1005 may also be a storage device independent of the aforementioned processor 1001. The motion control module is connected to the processor 1001 and is used to receive control commands from the processor 1001 to drive the lens assembly of the laser processing module to move along the Z-axis direction, thereby adjusting the laser focal length.

[0021] Those skilled in the art will understand that Figure 8 The structure shown does not constitute a limitation on the laser processing equipment and may include more or fewer components than shown, or combine certain components, or have different component arrangements. For example, it may also include laser emission control circuitry, vacuum adsorption control interface, stage positioning module, alarm mechanism interface, etc., to adapt to the complete control requirements of ultra-thin wafer laser processing, corresponding one-to-one with the core components of the laser processing system.

[0022] like Figure 8 As shown, the memory 1005, which serves as a storage medium, may include an operating system, a network communication module, a user interface module, and a laser processing program.

[0023] exist Figure 8In the laser processing equipment shown, the network interface 1004 is mainly used for data communication with peripherals such as the laser ranging module and the vision module; the motion control module is mainly used to receive the focal length adjustment command from the processor 1001 and drive the lens assembly to move along the Z-axis to ensure the focal length adjustment accuracy; the user interface 1003 is mainly used for data interaction with the user, such as displaying the equipment status, processing parameters, alarm information, etc. through the touch screen, and receiving the processing parameters, threshold parameters, operation commands, etc. set by the user; the processor 1001, as the core control unit, is also used to control the vacuum adsorption action of the stage, the scanning trajectory of the laser ranging module, the start and stop of the laser processing module and the processing path, and to collect and process the values ​​of various sensors; the processor 1001 and the memory 1005 in the laser processing equipment of the present invention can be set in the laser processing equipment, and the laser processing equipment calls the laser processing program stored in the memory 1005 through the processor 1001 and executes the laser processing method provided in the embodiment of the present invention.

[0024] Please refer to Figure 1 , Figure 1 This is a schematic flowchart of a first embodiment of a laser processing method according to the present invention. In one embodiment, the laser processing method proposed by the present invention includes the following steps: S100. Fix the wafer to be processed onto the stage.

[0025] It should be noted that the wafers to be processed are large-size ultra-thin wafers of 8-12 inches and 0.2-0.5mm thickness. The stage adopts a vacuum adsorption structure with a flatness error of ≤0.005mm on the adsorption surface, avoiding the influence of the stage's own precision on the wafer's fixation. The stage surface has uniformly distributed micro-adsorption holes that are connected to the vacuum generator, achieving wafer fixation without clamping through negative pressure adsorption, preventing secondary deformation caused by mechanical clamping.

[0026] In this step, the wafer to be processed is placed with the back side facing upwards in the stage's adsorption area, with the wafer edge aligned with the stage's positioning reference, and the positioning deviation controlled within ±0.01mm. The vacuum generator is activated to create a stable negative pressure of -80kPa to -100kPa in the adsorption holes. This negative pressure adsorption force tightly adheres the wafer to the stage surface. Once fixed, the negative pressure is maintained throughout the process, eliminating the need to move or rotate the stage, thus providing a stable foundation for subsequent continuous processing.

[0027] S200. Detect the surface morphology of the surface to be processed and obtain warping data.

[0028] It should be noted that the surface topography detection uses a laser ranging module, which can quickly capture the three-dimensional topography of the surface to be processed. The warpage data is the quantified difference between each measurement point on the surface to be processed and the ideal plane, providing data support for subsequent Z-axis compensation.

[0029] In this step, the laser ranging module's probe moves along a preset scanning trajectory to perform a full-coverage scan of the entire surface to be processed, acquiring real-time data on the actual distance parameters between the probe and each measurement point on the surface. The preset standard distance parameter is the theoretical distance between the ideal plane and the probe. By calculating the difference between each actual distance parameter and the standard distance parameter, multiple actual differences are obtained. All actual differences together constitute a warping data set, which is stored in memory 1005. The data format includes the coordinates of the measurement points and the corresponding differences, ensuring timeliness and traceability.

[0030] S300. Divide the surface to be processed into multiple processing areas according to the scanning area of ​​the laser processing module.

[0031] It should be noted that the effective scanning area of ​​the laser processing module is determined by the deflection angle of the galvanometer and the focal length of the field lens (such as 50mm×50mm or 100mm×100mm). The core purpose of partitioning is to divide the large surface to be processed into multiple areas that are adapted to the effective scanning area, ensuring that each area can be covered by the laser and avoiding a decrease in focusing accuracy caused by an excessively large single scanning range.

[0032] In this step, the processor 1001 first obtains the effective scanning area parameters of the laser processing module, and calculates the number of processing areas required to cover the entire surface to be processed by combining the geometric parameters of the surface to be processed (such as diameter and area). Then, according to the partitioning rules adapted to the shape of the surface to be processed (such as using ring partitions or sector partitions for circular surfaces and grid partitions for rectangular surfaces), the surface to be processed is divided into multiple continuous and non-overlapping processing areas. Each processing area is assigned a unique identifier and stored in the processing path planning dataset.

[0033] S400. Based on the warping data, calculate the Z-axis compensation value corresponding to each of the processing areas.

[0034] It should be noted that the Z-axis compensation value is a focal length adjustment parameter that compensates for the warping deformation of each processing area. Through targeted compensation, it ensures that the laser can be focused on the surface to be processed in each processing area, thus solving the focusing deviation problem caused by warping.

[0035] In this step, the processor 1001 extracts the actual difference and the number of differences for all measurement points within each processing area according to the processing area identifier. Using data statistics and fitting algorithms (such as the least squares method), the warping trend characteristic value of each processing area is calculated. This characteristic value is then determined as the Z-axis compensation value for the corresponding processing area, forming a mapping table of "processing area identifier - Z-axis compensation value," which is stored in the compensation parameter database for easy retrieval during processing.

[0036] S500. Before processing each of the processing areas, the laser processing module is controlled to adjust the laser focal length according to the Z-axis compensation value.

[0037] It should be noted that the lens assembly of the laser processing module can move along the Z-axis. By adjusting the position of the lens assembly, the laser focal length can be dynamically adjusted to ensure that the compensated focal length matches the actual warping state of the processing area.

[0038] In this step, when the laser processing module switches to the next processing area, the processor 1001 retrieves the corresponding Z-axis compensation value for that area from the compensation parameter database and sends a focal length adjustment command to the motion control module. The motion control module drives the lens assembly to move the corresponding distance along the Z-axis to complete the laser focal length adjustment without affecting the processing continuity.

[0039] S600. The laser processing module with adjusted focal length processes each processing area sequentially.

[0040] It should be noted that the processing sequence follows the markings of the processing areas, and there may be a 1-2mm overlap between processing paths of adjacent areas to avoid processing gaps or missed processing. The laser processing module uses pulsed lasers, with the wavelength set according to the wafer material to ensure a balance between marking clarity and processing efficiency.

[0041] In this step, after the focus is adjusted, the laser processing module performs laser marking on the current area according to the preset processing path, monitoring the laser power and focus status in real time during processing. After a single area is processed, it directly switches to the next area, repeating the focus adjustment in step S50 and the processing actions in this step, until all processing areas are completed. The entire process does not require interruption of negative pressure adsorption, nor does it require stage rotation or re-fixing, significantly reducing non-processing time.

[0042] The laser processing method for ultrathin wafers provided by this invention can solve the problems of low processing efficiency and wasted production capacity when laser marking the back of large-size ultrathin wafers by adopting a processing strategy of fixed stage combined with surface morphology detection and partitioned focal length compensation, while taking into account the impact of wafer warpage on laser focusing quality and positioning accuracy. Specifically, the process begins by fixing the wafer to be processed onto a stage, eliminating the need to rotate the stage or support structure throughout the process, thus avoiding mechanical rotation and repetitive vacuum adsorption. Next, the surface morphology of the surface to be processed is detected to obtain warpage data, allowing for an understanding of the wafer's deformation due to its own weight and process stress. Then, the surface to be processed is divided into multiple processing areas based on the scanning area of ​​the laser processing module. These areas are determined by the laser scanning capability, eliminating the need for mechanical partitioning methods that rely on quadrant supports. Based on the warpage data, the Z-axis compensation value for each processing area is calculated, and a personalized focal length compensation scheme is developed for each area's warpage degree. Before processing each processing area, the laser processing module adjusts the laser focal length according to the Z-axis compensation value, dynamically adjusting the focal length to adapt to the wafer's warpage deformation. Finally, the laser processing module with the adjusted focal length processes each processing area sequentially, completing the processing of all areas entirely on the fixed stage. This feature of fixing the wafer to be processed on the stage completely eliminates the frequent support rotation and repetitive vacuum adsorption processes in existing methods, significantly reducing non-processing time waste and significantly improving the overall operating efficiency and capacity of the equipment. The feature of detecting surface morphology to obtain warpage data, calculating the Z-axis compensation value of each region and adjusting the laser focal length can specifically compensate for the Z-axis offset error caused by wafer warpage, ensuring laser focusing quality and positioning accuracy, and solving the challenge of ultra-thin wafer warpage to processing accuracy. Based on the feature of laser scanning area partitioning, the partitioning method is more in line with the performance of the laser processing module, avoiding the mechanical limitations of quadrant partitioning, and further optimizing the continuity and efficiency of the processing flow.

[0043] Please refer to Figure 2 , Figure 2 This is a schematic flowchart of a second embodiment of a laser processing method according to the present invention. In this embodiment, step S200 includes: S210. Based on the effective measurement field of view of the laser ranging module's probe and the geometric parameters of the surface to be processed, plan a scanning trajectory covering the surface to be processed.

[0044] It should be noted that the effective measurement field of view of the laser ranging module's probe is typically φ5~10mm. The geometric parameters of the surface to be processed include diameter, center coordinates, etc. (obtained based on pre-positioning by the vision module). The scanning trajectory planning must ensure that the measurement points are evenly distributed, covering the surface to be processed without blind spots, while also taking scanning efficiency into account.

[0045] In this step, the processor 1001 plans the trajectory using a spiral scan or a grid scan based on the effective measurement field of view and the geometric parameters of the surface to be processed. For example, for a circular surface to be processed, radial scan lines are planned at equal angular intervals (e.g., 1° to 20°) starting from the center of the circle. The measurement points of each scan line are distributed at equal intervals to ensure that the scan trajectory fully covers the surface to be processed and that the scan path is not repeated.

[0046] S220. Control the probe of the laser ranging module to move along the scanning trajectory, and continuously collect the distance between the probe of the laser ranging module and multiple measurement points on the surface to be processed during the movement, so as to obtain multiple actual distance parameters.

[0047] It should be noted that the laser ranging module's probe is driven by a motion module, matched to the sampling frequency, ensuring that each measurement point can be acquired. The actual distance parameters are accompanied by millisecond-level timestamps and measurement point coordinates for easy subsequent data correlation and processing.

[0048] In this step, the processor 1001 sends trajectory control commands to the motion module, driving the probe to move along the planned trajectory. During the movement, the laser ranging module continuously collects distance data at a preset sampling frequency. For each data point collected, the planar coordinates (X, Y) and the actual distance value (Z_real) of that point are recorded simultaneously. All data is temporarily stored in a data buffer to ensure no data loss.

[0049] S230. Based on the preset standard distance parameters, calculate the difference between each actual distance parameter and the standard distance parameters to obtain multiple actual differences; the multiple actual differences are the warping data.

[0050] It should be noted that the preset standard distance parameter (Z_standard) is the theoretical distance from the laser ranging module probe to the ideal flat wafer surface to be processed. It is determined through equipment calibration, with a calibration accuracy of ≤0.01μm. The actual difference (ΔZ=Z_actual - Z_standard) is positive if it indicates that the point is warped upwards, and negative if it indicates that it is concave downwards. The absolute value of the difference reflects the degree of warping.

[0051] In this step, processor 1001 reads all actual distance parameters and corresponding coordinates from the data buffer, and calculates the actual difference ΔZ for each measurement point. All actual differences are arranged in order of measurement point coordinates to form a warped data matrix, which is stored in the warped database of memory 1005, providing raw data for subsequent partition compensation calculations.

[0052] This embodiment ensures the comprehensiveness, accuracy, and standardization of warpage data by clearly defining the scanning trajectory planning rules, data acquisition methods, and difference calculation logic, providing a reliable data foundation for subsequent Z-axis compensation and further improving the focusing accuracy of laser processing.

[0053] Please refer to Figure 3 , Figure 3 This is a schematic flowchart of a third embodiment of a laser processing method according to the present invention. In this embodiment, step S400 includes: S410. Extract all actual differences and the number of actual differences in each processing area.

[0054] It should be noted that the boundary information of the processing area is stored in step S300, and all measurement points within each area can be quickly filtered out through coordinate matching. The number of actual differences directly reflects the measurement density of the area, ensuring the statistical reliability of the compensation value calculation.

[0055] In this step, processor 1001 extracts the actual difference ΔZ of all measurement points within a processing area from the warped data matrix based on the area boundary coordinates, according to the processing area identifier. It then counts the total number of actual differences within each area (e.g., N≥100, ensuring the data volume meets statistical requirements). The extracted actual differences are stored in association with their quantities, forming a dedicated difference dataset for each processing area.

[0056] S420. Calculate the average distance of each processing area based on the actual difference and the number of actual differences; the average distance is the Z-axis compensation value parameter.

[0057] It should be noted that the average distance is the statistical mean of all actual differences within the processing area, which can reflect the overall warping trend of the area. Using this as the Z-axis compensation value, the overall focal length compensation of the area can be achieved, ensuring that the laser is focused on the average plane of the area.

[0058] In this step, processor 1001 calculates the difference dataset for each processing area, obtaining the average distance using the formula (Zcomplement = ΣΔZ / N), where ΣΔZ is the sum of all actual differences within the area, and N is the number of actual differences. The calculated average distance is then determined as the Z-axis compensation value for that processing area and updated in the "Processing Area Identifier - Z-axis Compensation Value" mapping table, providing a direct basis for focus adjustment.

[0059] This embodiment achieves Z-axis compensation value matching by extracting data from different regions and calculating statistical averages, ensuring that each processing area can obtain targeted focal length compensation and effectively offset the focusing deviation caused by warping deformation.

[0060] Please refer to Figure 4 , Figure 4 This is a schematic flowchart of a fourth embodiment of a laser processing method according to the present invention. In this embodiment, step S420 includes: S421. Obtain the planar position coordinates of each measurement point within the processing area and the corresponding actual difference.

[0061] It should be noted that the planar position coordinates (X,Y) and the actual difference ΔZ are already stored in the warped data matrix. When extracting, it is necessary to ensure that the coordinates and the difference correspond one-to-one to avoid data misalignment affecting the calculation accuracy.

[0062] In this step, the processor 1001 extracts the planar position coordinates (X,Y) of each measurement point and the corresponding actual difference ΔZ from the dedicated difference dataset of the processing area, forming a set of "coordinate-difference" data pairs to ensure the integrity and accuracy of each data pair.

[0063] S422. Based on the plane position coordinates and the actual difference, the least squares method is used to fit a fitted plane equation that characterizes the warping trend of the processing area.

[0064] It should be noted that the least squares method can fit all measurement points in the region to the maximum extent by fitting the plane, accurately reflecting the overall warping trend of the region. The fitting accuracy is higher than that of simple mean calculation, and it is especially suitable for regions with uneven warping distribution.

[0065] In this step, processor 1001 establishes a fitting plane equation with the planar position coordinates (X, Y) as the independent variable and the actual difference ΔZ as the dependent variable: Zfit = aX + bY + c (where a, b, and c are fitting coefficients). The fitting coefficients are calculated using the least squares method to minimize the sum of squares of the deviations from all measurement points to the fitting plane, ensuring that the fitting plane can truly reflect the warping state of the processed area.

[0066] S423. Determine the geometric center coordinates of the processing area.

[0067] It should be noted that the geometric center coordinates of the processing area are calculated based on the area boundary coordinates. For example, the center of a rectangular area is the coordinates of the intersection of the diagonals, and the center of a circular area is the coordinates of the center of the circle, ensuring the representativeness of the center position.

[0068] In this step, the processor 1001 calculates the planar position coordinates (X0, Y0) of the geometric center of the processing area based on the boundary coordinate parameters of the processing area, and uses it as a representative coordinate point of the area for subsequent fitting height value calculation.

[0069] S424. Substitute the coordinates of the geometric center position into the equation of the fitting plane to calculate the fitting height value at the geometric center.

[0070] It should be noted that the fitted height value at the geometric center can represent the overall warp of the processing area. Using this as the average distance value can make the focal length compensation more consistent with the actual warp trend of the area.

[0071] In this step, the geometric center coordinates (X0, Y0) are substituted into the fitting plane equation Zfit = aX + bY + c, and the result is Zfit0 = aX0 + bY0 + c, which is the fitting height value at the geometric center.

[0072] S425. The fitted height value is determined as the average distance of the processing area.

[0073] It should be noted that the fitted height value integrates the warping information of all measurement points in the region, and can more accurately reflect the warping characteristics of the region than the simple mean. Using this as the distance average (Zcomplement = Zfit0) can improve the accuracy of Z-axis compensation.

[0074] In this step, the calculated fitted height value is determined as the average distance of the processing area, i.e., the final Z-axis compensation value, and updated in the mapping table. This embodiment further optimizes the calculation accuracy of the Z-axis compensation value by using least squares fitting and center coordinate calculation, which is especially suitable for processing areas with complex warping, ensuring the quality of laser focusing.

[0075] Please refer to Figure 5 , Figure 5 This is a schematic flowchart of a fifth embodiment of a laser processing method according to the present invention. In this embodiment, the surface to be processed is a circular region; step S210 includes: S211. Based on the preset angle interval parameters, with the center of the circular region as the rotation center, determine multiple diameter scanning lines that penetrate the circular region; wherein, the multiple diameter scanning lines are evenly distributed along the circumference of the circular region, and both ends of each diameter scanning line extend to the edge of the circular region.

[0076] It should be noted that the surface to be processed is the back of the wafer, which is circular, and its center coordinates are obtained in advance through the vision module. The preset angle interval parameter can be adjusted according to the measurement accuracy requirements, and is usually set to 1°~15°. The smaller the angle interval, the higher the measurement point density and the higher the scanning accuracy, but the scanning time will increase slightly.

[0077] The core function of the diameter scan line is to ensure that the scan trajectory fully covers the circular surface to be processed, and that the measurement areas of adjacent scan lines partially overlap to avoid measurement blind spots. The length of each diameter scan line is consistent with the diameter of the surface to be processed, and both ends can extend 1~2mm beyond the edge of the surface to be processed to ensure the integrity of measurement data in the edge area.

[0078] In this step, the processor 1001 uses a pre-positioned center as its rotation center and calculates and generates the coordinate paths of multiple diameter scan lines according to a preset angular interval parameter (e.g., 2°). For example, for a 12-inch (300mm in diameter) wafer, 180 diameter scan lines can be generated at 2° intervals. All scan lines are evenly distributed circumferentially, forming a radial scan network covering the entire surface to be processed. The scan line coordinate data is stored in the trajectory planning dataset.

[0079] S212. According to the circumferential distribution order of the multiple diameter scan lines, the diameter scan lines are connected sequentially to form the scan trajectory.

[0080] It should be noted that the circumferential distribution sequence is clockwise or counterclockwise, and the connection method is a smooth transition between the endpoints of adjacent diameter scan lines. This ensures that there are no sudden stops or sharp turns during the movement of the laser ranging module's probe head, avoiding impact on measurement accuracy due to motion. The moving speed of the scanning trajectory is set to 50~100mm / s, matching the sampling frequency (10kHz) of the laser ranging module, ensuring that the spacing between measurement points on each scan line is uniform (≤0.5mm).

[0081] In this step, the processor 1001 sequentially connects each diameter scan line in a clockwise direction, forming a continuous "radial + ring transition" scan trajectory. For example, after completing the scan of the first diameter scan line (e.g., 0° direction), the probe makes an arc transition along the edge of the surface to be processed (the transition radius is slightly larger than the wafer radius), moves to the starting endpoint of the second diameter scan line (e.g., 2° direction), and then scans along that diameter scan line to the other endpoint, repeating this cycle until all diameter scan lines are scanned.

[0082] This embodiment achieves full coverage scanning of the circular surface to be processed by planning and connecting radial diameter scanning lines. The measurement points are evenly distributed, making it particularly suitable for warpage detection of large-size circular wafers and ensuring the comprehensiveness and accuracy of warpage data.

[0083] Please refer to Figure 6 , Figure 6 This is a schematic flowchart of a sixth embodiment of a laser processing method according to the present invention. In this embodiment, step S300 includes: S310. Determine the effective scanning area of ​​the laser processing system and obtain the effective scanning area parameters.

[0084] It should be noted that the effective scanning area of ​​the laser processing system is determined by the maximum deflection angle of the galvanometer and the focal length of the field lens. For example, when using a 1064nm pulsed laser and a field lens with a focal length of 100mm, the effective scanning area can be 50mm×50mm or 100mm×100mm. The effective scanning area parameters include the length, width and center coordinate offset of the area, which are obtained in advance through system calibration, with a calibration accuracy of ≤±0.01mm.

[0085] The effective scanning area parameter is the core basis for partitioning. It is necessary to ensure that the size of a single processing area does not exceed the effective scanning area, and that there is an overlap between adjacent processing areas to avoid processing gaps or missed processing due to the decrease in scanning edge accuracy.

[0086] In this step, the processor 1001 retrieves the effective scanning area parameters (e.g., 50mm×50mm) of the laser processing module from the system parameter library, and combines them with the geometric parameters of the surface to be processed (e.g., 300mm diameter of a 12-inch wafer) to provide basic data for subsequent calculation of the number of partitions and area division.

[0087] S320. Based on the effective scanning area parameters and the geometric parameters of the surface to be processed, calculate the number of processing areas required to cover the surface to be processed, and obtain the processing area quantity parameters.

[0088] It should be noted that the geometric parameters of the surface to be processed include diameter, area, etc. When calculating, the number of processing areas should be determined according to the principle of "rounding up" to ensure that all areas can be completely covered without any omissions.

[0089] The calculation logic for the number of processing areas is as follows: taking the circumscribed square of the circular surface to be processed as the calculation basis, the side length of the circumscribed square is equal to the diameter of the surface to be processed. Divide the side length of the circumscribed square by the side length of the effective scanning area to obtain the number of processing areas required for each row and each column. Multiply the two by the total number of processing areas.

[0090] In this step, taking a 12-inch wafer (300mm diameter) and an effective scanning area of ​​50mm × 50mm as an example, the side length of the circumscribed square is 300mm. The number of areas required per row = 300mm ÷ 50mm = 6, the number of areas required per column = 300mm ÷ 50mm = 6, and the total number of processing areas = 6 × 6 = 36. If the effective scanning area is 100mm × 100mm, then the total number of processing areas = 3 × 3 = 9. The number of processing areas can be flexibly adjusted according to the effective scanning area.

[0091] S330. According to the partitioning rule parameters that adapt to the shape of the surface to be processed, the surface to be processed is sequentially divided into multiple processing areas according to the number of processing areas.

[0092] It should be noted that the partitioning rule parameters for adapting to the circular surface to be processed are "square grid partitioning + edge area clipping". That is, first divide the area into square grids according to the effective scanning area size, and then clip the part of the grid that exceeds the circular surface to be processed to ensure that each processing area is within the scope of the surface to be processed.

[0093] Each processing area is assigned a unique identifier (such as "Area-XY", where X is the row number and Y is the column number), and its boundary coordinates, geometric center coordinates, and other information are recorded to facilitate subsequent warp data extraction and focus adjustment.

[0094] In this step, the processor 1001 divides the area into square grids centered on the center of the surface to be processed, based on the calculated number of processing areas. For example, 36 processing areas are evenly distributed in 6 rows and 6 columns, each area measuring 50mm × 50mm. The portion of the grid extending beyond the circular surface to be processed is removed by coordinate trimming, resulting in 36 continuous and non-overlapping processing areas. The identifiers, boundary coordinates, and center coordinates of all processing areas are stored in the processing area database, providing a basis for subsequent processing flows.

[0095] This embodiment achieves the adaptation of large-size processing surfaces to the effective scanning area of ​​the laser through a standardized zoning process, ensuring that each processing area can be covered by the laser. At the same time, the overlapping area design avoids processing gaps and improves the overall processing quality.

[0096] In one embodiment, the laser processing module includes: A laser emitter, used to emit a laser beam; A beam expander is located at the light-emitting end of the laser emitter and is used to expand the laser beam. A lens assembly is movable along the Z-axis. The lens assembly includes a galvanometer and a field lens. The galvanometer is located at the light-emitting end of the beam expander and is used to deflect the laser beam. The field lens is located at the light-emitting end of the galvanometer and is used to vertically focus the laser beam deflected by the galvanometer onto the surface to be processed of the wafer.

[0097] It should be noted that the laser emitter is used to emit a laser beam, employing a pulsed fiber laser (such as the IPGYLP series) with an output wavelength of 1064nm or 532nm. The appropriate wavelength can be selected based on the wafer material (such as silicon or sapphire). The laser output power is adjustable from 1 to 20W, the pulse width from 1 to 10ns, and the repetition frequency from 1 to 100kHz, ensuring a balance between the clarity of laser marking and processing efficiency while avoiding excessive damage to the wafer. The core function of the laser emitter is to provide a stable and controllable laser source. Its output power, pulse parameters, and other parameters can be adjusted in real time via the processor 1001 to adapt to the needs of different processing areas.

[0098] The beam expander is located at the output end of the laser emitter. It employs a Galilean beam expander with a magnification of 2 to 10 times, adjustable according to focusing requirements. Its core function is to expand and collimate the laser beam, reducing its divergence angle and improving the accuracy and energy density of subsequent focusing. The beam expander's adjustment accuracy is ≤0.01 times. It is mechanically fixed to the housing of the laser processing module, coaxially aligned with the laser emitter's output port, with a coaxiality error ≤0.01mm, ensuring a stable laser beam transmission path.

[0099] The lens assembly can move along the Z-axis with a movement accuracy of ≤0.01μm, driven by a motion control module to adjust the laser focal length. The galvanometer, located at the beam expander's output end, deflects the laser beam and controls its scanning path on the surface to be processed, achieving the marking of a specified pattern. The field lens, located at the galvanometer's output end, is a flat-field focusing lens. Its core function is to vertically focus the deflected laser beam onto the surface of the wafer to be processed, ensuring the marking accuracy meets product requirements.

[0100] In this embodiment, the laser beam emitted by the laser emitter is expanded and collimated by the beam expander before being transmitted to the galvanometer. The processor 1001 sends a scanning path command to the galvanometer, which deflects the laser beam to the specified direction. After being focused by the field lens, the laser beam forms a spot and is projected onto the surface to be processed. Each time the processing area is switched, the motion control module drives the lens assembly to move along the Z-axis and adjusts the focal length according to the Z-axis compensation value of the area to ensure that the spot is always focused on the surface to be processed. During the processing, the power and pulse parameters of the laser emitter are coordinated with the scanning speed of the galvanometer to achieve clear and efficient laser marking.

[0101] In addition, please see Figure 7 The present invention also proposes a laser processing apparatus, the apparatus comprising: The wafer fixing module 10 is used to fix the wafer to be processed on the carrier stage; The region division module 20 is used to divide the surface to be processed into multiple processing regions according to the scanning area of ​​the laser processing module; The detection module 30 is used to detect the surface morphology of the surface to be processed and obtain warping data; The compensation calculation module 40 is used to calculate the Z-axis compensation value corresponding to each of the processing areas based on the warping data. The control module 50 is used to control the laser processing module to adjust the laser focal length according to the Z-axis compensation value before processing each processing area; and to use the laser processing module with the adjusted focal length to process each processing area sequentially.

[0102] It should be noted that the wafer fixing module 10 is used to fix the wafer to be processed onto the stage. The wafer fixing module 10 adopts a vacuum adsorption structure design. Its core components include a vacuum generator, a stage body, and a positioning auxiliary structure. The adsorption surface of the stage body is made of a wear-resistant and non-slip material, with uniformly arranged micro-adsorption holes distributed on the surface. These adsorption holes are connected to the vacuum generator through internal air channels, enabling the rapid generation of a stable negative pressure adsorption force after startup. The positioning auxiliary structure is set around the edge of the stage adsorption surface and uses a flexible contact material. It can precisely limit the wafer's position without damaging the wafer's edges, ensuring consistent wafer placement. This module achieves clamp-free wafer fixing through negative pressure adsorption, avoiding secondary deformation of the wafer that may be caused by traditional mechanical clamping. Simultaneously, in conjunction with the positioning auxiliary structure, it ensures the positional accuracy of the fixed wafer, providing a stable foundation for subsequent processing.

[0103] The region division module 20 is used to divide the surface to be processed into multiple processing areas based on the scanning area of ​​the laser processing module. The region division module 20 has a built-in parameter storage unit and a partitioning calculation unit. The parameter storage unit is used to pre-store the effective scanning area parameters of the laser processing module, the geometric feature parameters of the surface to be processed, and various partitioning rules adapted to different shapes of the surface to be processed. The partitioning calculation unit has powerful data analysis and processing capabilities. It can first read the effective scanning area parameters and the geometric feature parameters of the surface to be processed from the parameter storage unit, calculate the number of processing areas required to cover the entire surface to be processed using a preset algorithm, and then call the corresponding partitioning rules according to the shape characteristics of the surface to be processed to automatically divide the surface to be processed into multiple continuous and non-overlapping processing areas. Each processing area is assigned unique identification information and boundary coordinate data, facilitating accurate association with warpage data and compensation values ​​in the future. This ensures that the partitioning results are compatible with the scanning capabilities of the laser processing module, avoiding processing blind spots or repeated processing.

[0104] The detection module 30 is used to detect the surface morphology of the surface to be processed and acquire warpage data. The detection module 30 consists of a laser ranging component and a motion driving component. The laser ranging component uses a high-precision laser displacement sensor, featuring high measurement accuracy and fast response speed, and can accurately capture the distance information between each point on the surface to be processed and the probe. The motion driving component is connected to the laser ranging component and can drive the laser ranging component to move along a preset scanning trajectory. The scanning trajectory is generated by the geometric parameters of the surface to be processed provided by the region division module 20, ensuring comprehensive coverage of every area of ​​the surface to be processed. During the detection process, the motion driving component drives the laser ranging component to move along the planned trajectory, and the laser ranging component synchronously and continuously collects distance data. Simultaneously, the collected distance data is compared and calculated with preset standard distance parameters to obtain the warpage offset of each measurement point. The warpage offsets of all measurement points are integrated to form complete warpage data. This data includes the coordinate information and timestamp of the measurement points, ensuring data traceability and accuracy, and providing a reliable basis for subsequent compensation value calculation.

[0105] The compensation calculation module 40 is used to calculate the Z-axis compensation value corresponding to each of the processing areas based on the warp data. The compensation calculation module 40 includes a data extraction unit and a calculation unit. The data extraction unit can accurately extract the warp offset data of all measurement points within each processing area from the warp data obtained by the detection module 30, based on the processing area identifier and boundary coordinates generated by the area division module 20. The calculation unit has built-in multiple data processing algorithms that can analyze and process the extracted warp offset data within each processing area. The algorithm fits the overall warp trend of each processing area, and then, combined with characteristic parameters such as the geometric center position of the processing area, calculates the Z-axis compensation value that can offset the warp deformation of that area. The Z-axis compensation value of each processing area is associated with and stored one-to-one with the identification information of that area, forming a mapping table of "processing area - compensation value," which is convenient for the control module 50 to quickly call during processing, ensuring accurate matching between the compensation value and the processing area.

[0106] The control module 50 is used to control the laser processing module to adjust the laser focal length according to the Z-axis compensation value before processing each processing area; and to use the laser processing module with the adjusted focal length to process each processing area sequentially. As the core control unit of the entire laser processing device, the control module 50 establishes communication connections with the wafer fixing module 10, the area division module 20, the detection module 30, the compensation calculation module 40, and the laser processing module, and can coordinate the workflow of each module. During processing, the control module 50 first calls the corresponding processing area information and Z-axis compensation value according to the identification order of the processing areas, sends a focal length adjustment command to the laser processing module, and controls the lens assembly of the laser processing module to move a corresponding distance along the Z-axis direction to complete the precise adjustment of the laser focal length, ensuring that the laser can be focused on the actual surface of the current processing area. After the focal length adjustment is completed, the control module 50 continues to send processing commands to the laser processing module, controlling the laser processing module to process the current area according to the preset processing path. After the processing of this area is completed, it automatically switches to the next processing area, repeating the focal length adjustment and processing actions until all processing areas are completed. Throughout the process, the control module 50 will monitor the working status of each module in real time. If an abnormality is detected, it will issue an alarm signal and suspend processing in a timely manner to ensure the stability and safety of the processing.

[0107] In this embodiment, the laser processing device achieves full automation of ultra-thin wafer laser processing through modular design, and features high processing accuracy, high efficiency and strong adaptability, which can effectively solve the processing problems caused by warping of large-size ultra-thin wafers.

[0108] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect applications in other related technical fields, are included within the patent protection scope of the present invention.

Claims

1. A method of laser processing of an ultrathin wafer, characterized by, The laser processing method includes: Fix the wafer to be processed onto the carrier stage; The surface morphology of the surface to be processed is detected to obtain warpage data; The surface to be processed is divided into multiple processing areas based on the scanning area of ​​the laser processing module; Based on the warping data, calculate the Z-axis compensation value for each of the processing areas; Before processing each of the aforementioned processing areas, the laser processing module is controlled to adjust the laser focal length according to the Z-axis compensation value; The laser processing module with its focal length adjusted is used to process each processing area sequentially.

2. The laser processing method as described in claim 1, characterized in that, The step of detecting the surface morphology of the surface to be processed and obtaining warpage data includes: Based on the effective measurement field of view of the laser ranging module's probe and the geometric parameters of the surface to be processed, a scanning trajectory covering the surface to be processed is planned; The probe of the laser ranging module is controlled to move along the scanning trajectory, and during the movement, the distance between the probe of the laser ranging module and multiple measurement points on the surface to be processed is continuously collected to obtain multiple actual distance parameters; Based on the preset standard distance parameters, the difference between each actual distance parameter and the standard distance parameter is calculated to obtain multiple actual differences; the multiple actual differences are the warping data.

3. The laser processing method as described in claim 2, characterized in that, The step of calculating the Z-axis compensation value corresponding to each of the processing areas based on the warpage data includes: Extract all actual differences and the number of actual differences within each processing area; Based on the actual difference and the number of actual differences, calculate the average distance for each processing area; the average distance is the Z-axis compensation value parameter.

4. The laser processing method as described in claim 3, characterized in that, The step of calculating the average distance of each processing area based on the actual difference and the number of actual differences includes: Obtain the planar position coordinates of each measurement point within the processing area and the corresponding actual difference; Based on the planar position coordinates and the actual difference, the least squares method is used to fit a fitted plane equation that characterizes the warping trend of the processing area. Determine the coordinates of the geometric center of the processing area; Substitute the coordinates of the geometric center into the equation of the fitting plane to calculate the fitting height value at the geometric center. The fitted height value is determined as the average distance of the processing area.

5. The laser processing method as described in claim 2, characterized in that, The surface to be processed is a circular region; the step of planning a scanning trajectory covering the surface to be processed based on the effective measurement field of view of the laser ranging module's probe and the geometric parameters of the surface to be processed includes: Based on preset angle interval parameters, multiple diameter scan lines are determined with the center of the circular region as the rotation center; wherein, the multiple diameter scan lines are evenly distributed along the circumference of the circular region, and both ends of each diameter scan line extend to the edge of the circular region; According to the circumferential distribution order of the multiple diameter scan lines, the diameter scan lines are sequentially connected to form the scan trajectory.

6. The laser processing method according to any one of claims 1 to 5, characterized in that, The step of dividing the surface to be processed into multiple processing areas based on the scanning area of ​​the laser processing module includes: Determine the effective scanning area of ​​the laser processing system to obtain the effective scanning area parameters; Based on the effective scanning area parameters and the geometric parameters of the surface to be processed, the number of processing areas required to cover the surface to be processed is calculated, and the number of processing areas is obtained. According to the partitioning rule parameters that adapt to the shape of the surface to be processed, the surface to be processed is sequentially divided into multiple processing areas according to the number of processing areas parameter.

7. The laser processing method according to any one of claims 1 to 5, characterized in that, The laser processing module includes: A laser emitter, used to emit a laser beam; A beam expander is located at the light-emitting end of the laser emitter and is used to expand the laser beam. A lens assembly is movable along the Z-axis. The lens assembly includes a galvanometer and a field lens. The galvanometer is located at the light-emitting end of the beam expander and is used to deflect the laser beam. The field lens is located at the light-emitting end of the galvanometer and is used to vertically focus the laser beam deflected by the galvanometer onto the surface to be processed of the wafer.

8. A laser processing apparatus, characterized in that, The device includes: A wafer fixing module is used to fix the wafer to be processed onto the carrier stage; The region division module is used to divide the surface to be processed into multiple processing regions based on the scanning area of ​​the laser processing module. The detection module is used to detect the surface morphology of the surface to be processed and obtain warpage data; The compensation calculation module is used to calculate the Z-axis compensation value corresponding to each of the processing areas based on the warping data. The control module is used to control the laser processing module to adjust the laser focal length according to the Z-axis compensation value before processing each processing area; and to use the laser processing module with the adjusted focal length to process each processing area sequentially.

9. A laser processing device, characterized in that, The device includes: a memory, a processor, and a laser processing program stored in the memory and executable on the processor, the laser processing program being configured to implement the steps of the laser processing method as described in any one of claims 1 to 7.

10. A readable storage medium, characterized in that, The storage medium stores a laser processing program, which, when executed by a processor, implements the steps of the laser processing method as described in any one of claims 1 to 7.

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