Gas uniformizing assembly and semiconductor equipment

Abstract

The embodiment of the invention provides a gas uniformizing assembly and semiconductor equipment, relates to the technical field of semiconductors, and can inhibit parasitic plasmas around a spraying device, thereby improving the cumulative limit of the semiconductor equipment and improving the production efficiency. The gas uniformizing assembly comprises a spraying device and an insulating ring, and the insulating ring is arranged on the outer side of the base body in a sleeving mode; the spraying device comprises a base body and an air outlet face located at one end of the base body. The size of the air outlet face in the first direction is smaller than that of the part, away from the air outlet face, of the base body in the first direction, and the first direction is perpendicular to the axial direction of the base body; the gas uniformizing assembly is used for semiconductor equipment.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a gas equalization component and a semiconductor device. Background Technology

[0002] In semiconductor equipment such as deposition or etching equipment, the cumulative limit, which is the limit to which the semiconductor equipment can continuously process products, is an important parameter. For example, the cumulative limit of a plasma-enhanced chemical vapor deposition (PECVD) equipment refers to the upper limit of the total film thickness or total deposition amount that can be continuously deposited without affecting product quality and equipment stability. Factors affecting the cumulative limit include the plasma adhesion limit that components such as the equipment cavity and spray head can withstand. When the plasma adhesion limit that components such as the equipment cavity and spray head can withstand is reached, the equipment needs to be shut down for maintenance. At this point, the upper limit of the total film thickness or total deposition amount that the equipment can continuously deposit is the cumulative limit of the equipment. Maintenance of semiconductor equipment includes, for example, cleaning the plasma adhering to the equipment and replacing vulnerable components. Therefore, if the cumulative limit of semiconductor equipment is too low, frequent equipment maintenance is required, reducing product production efficiency.

[0003] Therefore, improving the cumulative limit of semiconductor devices has become an urgent problem to be solved. Summary of the Invention

[0004] This application discloses a gas equalization component and a semiconductor device for improving the cumulative limit of the semiconductor device, thereby improving the production efficiency of the semiconductor device.

[0005] In a first aspect, this application provides a gas equalization component, which includes a spraying device and an insulating ring. The spraying device includes a substrate and an air outlet surface located at one end of the substrate, and the insulating ring is sleeved on the outside of the substrate. The dimension of the air outlet surface in a first direction is smaller than the dimension of the portion of the substrate away from the air outlet surface in the first direction, and the first direction is perpendicular to the axial direction of the substrate.

[0006] By setting the size of the gas outlet surface in the first direction to be smaller than the size of the portion of the substrate away from the gas outlet surface in the first direction, the size of the gas outlet surface in the first direction is reduced. Combined with the installation of an insulating ring on the outside of the substrate, the adhesion of parasitic plasma can be reduced, thereby improving the cumulative limit of semiconductor devices and increasing product production efficiency.

[0007] In one possible implementation, the difference between the dimension of the air outlet surface in the first direction and the dimension of the portion of the substrate away from the air outlet surface in the first direction ranges from 50 mm to 80 mm.

[0008] Thus, within this range of difference, it is possible to reduce the amount of parasitic plasma near the spray device during a single deposition process while ensuring that the outlet area of ​​the spray device is large enough to maintain a high film deposition efficiency.

[0009] In one possible implementation, the substrate includes: a fixing portion for connecting a reaction chamber cover of a semiconductor device; the fixing portion having the same dimensions in the first direction along a second direction; the second direction being parallel to the axial direction of the substrate.

[0010] In this way, the dimensions of the fixing part remain consistent in the first direction, which facilitates the fixing of the spray device to the reaction chamber cover.

[0011] In one possible implementation, the substrate further includes: a recessed portion connected to the fixing portion in the second direction, the recessed portion being located in the reaction chamber; and the dimension of the portion of the recessed portion away from the fixing portion in the first direction being less than or equal to the dimension of the portion of the recessed portion close to the fixing portion in the first direction.

[0012] In this way, the size of the air outlet surface in the first direction is reduced.

[0013] In one possible implementation, the size of the air outlet surface in the first direction ranges from 300mm to 380mm.

[0014] In this way, the size of the air outlet surface in the first direction is reduced, while ensuring that the air outlet area of ​​the spray device is large enough to maintain a large film deposition efficiency.

[0015] In one possible implementation, the size of the substrate in the second direction ranges from 30 mm to 100 mm.

[0016] In this way, the depth of the substrate in the reaction chamber is increased to reduce the concentration of parasitic plasma at the edge of the spray device, thereby reducing the amount of parasitic plasma near the spray device during a single deposition process, thus increasing the cumulative limit of the semiconductor equipment and improving product production efficiency.

[0017] In one possible implementation, the insulating ring wraps around the substrate along a second direction, with the outer wall of the insulating ring parallel to the second direction.

[0018] This makes the manufacture of insulating rings easier.

[0019] In one possible implementation, the length of the insulating ring ranges from 30 mm to 150 mm.

[0020] In this way, the insulating ring and the spray device can be used in conjunction.

[0021] In one possible implementation, the end of the insulating ring near the outlet surface has a protrusion along a second direction.

[0022] Thus, by setting the protrusions on the edge of the insulating ring, the protrusions are used to surround at least a portion of the discharge area, further confining the plasma within the discharge area and further suppressing parasitic plasma around the spray device.

[0023] In one possible implementation, the protrusion has one or more flow guide holes that penetrate the protrusion in a first direction.

[0024] In this way, by setting the flow guide hole, the spray gas can be circulated within the discharge area, maintaining a uniform and stable plasma concentration within the discharge area.

[0025] In one possible implementation, the number of flow guide holes is multiple, and the multiple flow guide holes are spaced apart along the direction surrounding the insulating ring.

[0026] Thus, a method for arranging the flow guide holes is provided, which can make the gas flow out uniformly in the discharge area, maintain the flow field stability in the discharge area, and improve the uniformity of the deposited film.

[0027] In one possible implementation, the spacing between two adjacent flow guide holes in the direction surrounding the insulating ring is less than or equal to 2 mm.

[0028] This prevents the spacing between two adjacent guide holes from becoming too large, thus reducing the uniformity of gas flow in the discharge area.

[0029] In one possible implementation, there are multiple flow guide holes, which are spaced apart in the second direction and extend along the direction surrounding the insulating ring.

[0030] This provides an alternative arrangement of the flow guide holes.

[0031] In one possible implementation, the ratio of the wall thickness of the protrusion to the maximum wall thickness of the portion of the insulating ring fitted onto the outside of the substrate ranges from 95% to 105%.

[0032] In this way, the wall thickness of the protrusion is similar to the wall thickness at the end of the insulating ring, reducing the difficulty of processing the insulating ring.

[0033] In one possible implementation, the ratio of the wall thickness of the protrusion to the maximum wall thickness of the portion of the insulating ring fitted onto the outside of the substrate is less than or equal to 30%.

[0034] This provides another way to set up the protrusion, suppressing parasitic plasma around the spray device.

[0035] Secondly, this application provides a semiconductor device, which includes: a reaction chamber, a gas equalization component as described in any of the above embodiments, and a base. The gas equalization component includes a spray device and an insulating ring. The reaction chamber has a reaction chamber cover. The spray device includes: a substrate and an outlet surface located at one end of the substrate. The end of the substrate away from the outlet surface passes through the reaction chamber cover and is fixed to the reaction chamber cover. The base is located inside the reaction chamber and is spaced apart from and opposite to the spray device.

[0036] In this way, by setting up the spray device and the insulating ring, the space between the spray device and the reaction chamber cover is reduced and the electric field is isolated, reducing the stagnation environment of the reaction gas in the reaction chamber, thereby reducing the adhesion of parasitic plasma, and thus improving the cumulative limit of semiconductor equipment and improving product production efficiency.

[0037] In one possible implementation, the distance between the air outlet surface of the spray device and the reaction chamber cover in the second direction ranges from 5 mm to 73 mm.

[0038] Thus, within this spacing range, the downward range of the spray device in the reaction chamber is increased, which can effectively reduce the adhesion of parasitic plasma and reduce the processing difficulty of the spray device, insulating ring and reaction chamber.

[0039] In one possible implementation, the dimension of the air outlet surface in the first direction is smaller than the dimension of the base in the first direction.

[0040] This allows for further optimization of the flow field distribution within the reaction chamber and a reduction in the plasma concentration outside the reaction region.

[0041] In one possible implementation, the difference between the dimension of the air outlet surface in the first direction and the dimension of the base in the first direction is in the range of 50mm to 80mm.

[0042] Thus, by setting the size of the outlet surface in the first direction to be smaller than the size of the base in the first direction, the concentration of parasitic plasma at the edge of the spray device can be reduced.

[0043] In one possible implementation, the reaction chamber cover is provided with a plurality of air inlets, which are arranged around the insulating ring and penetrate the reaction chamber cover.

[0044] By setting multiple air inlets that penetrate the reaction chamber cover and are arranged around the insulating ring, purge gas can be provided to the periphery of the reaction area inside the reaction chamber, further suppressing parasitic plasma around the spray device.

[0045] In one possible implementation, the air outlet surface of the spray device is provided with a plurality of spray holes, and the ratio of the diameter of the air inlet hole to the diameter of the spray hole is in the range of 95% to 105%.

[0046] The size of the air inlet is close to that of the spray nozzle, so that the air inlet flow rate matches the spray flow rate, reducing eddies caused by differences in gas flow resistance and further suppressing parasitic plasma around the spray device.

[0047] In one possible implementation, the reaction chamber cover has a cover ring embedded in the reaction chamber cover, and the air inlet is disposed on the cover ring.

[0048] An air inlet setting method is provided, in which the air inlet is set on the cavity cover ring, and different specifications of cavity cover rings can be replaced according to different processes, thereby improving the applicability of thin film deposition equipment.

[0049] In one possible implementation, the insulating ring is provided with a protrusion, and the distance between the end of the protrusion away from the reaction chamber cover and the gas outlet surface in the second direction is in the range of 2mm to 50mm.

[0050] Thus, within this spacing range, the protrusions can effectively confine the plasma within the discharge area and reduce the processing difficulty of the insulating ring.

[0051] In one possible implementation, the dimension of the insulating ring in the first direction is larger than the dimension of the base in the first direction.

[0052] This optimizes the flow field distribution within the reaction chamber and further reduces parasitic plasma around the spray device.

[0053] Thirdly, this application provides a spraying device for semiconductor equipment, the spraying device comprising: a substrate and an outlet surface located at one end of the substrate; the dimension of the outlet surface in a first direction is smaller than the dimension of the portion of the substrate excluding the outlet surface in the first direction; the first direction is perpendicular to the axial direction of the substrate.

[0054] Thus, when used in conjunction with the insulating ring of this application, the spray device can suppress the parasitic plasma around the spray device, reduce the amount of parasitic plasma near the spray device during a single deposition process, thereby increasing the cumulative limit of the semiconductor device and improving product production efficiency.

[0055] Fourthly, this application provides an insulating ring for a semiconductor device, the semiconductor device including a spray device, the spray device including: a substrate and an outlet surface located at one end of the substrate, the insulating ring being sleeved on the outside of the substrate; the portion of the inner wall of the insulating ring near the outlet surface has the smallest dimension in a first direction, the first direction being perpendicular to the axial direction of the insulating ring.

[0056] In this way, the insulating ring, when used in conjunction with the spray device, can suppress the parasitic plasma around the spray device, reduce the amount of parasitic plasma near the spray device during a single deposition process, thereby increasing the cumulative limit of the semiconductor equipment and improving product production efficiency. Attached Figure Description

[0057] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0058] Figure 1 This is a front cross-sectional schematic diagram of a semiconductor device provided in an embodiment of this application; Figure 2 A front cross-sectional schematic diagram of another semiconductor device provided in an embodiment of this application; Figure 3 A front cross-sectional schematic diagram of another semiconductor device provided in an embodiment of this application; Figure 4 A front cross-sectional schematic diagram of another semiconductor device provided in an embodiment of this application; Figure 5 This is a graph showing the relationship between the thickness (mm) and breakdown voltage (kV) of the ceramic material. Figure 6 A plasma density distribution diagram of a semiconductor device under a first configuration method provided in this application embodiment; Figure 7 A plasma density distribution diagram of a semiconductor device under a second configuration provided in this application embodiment; Figure 8 A plasma density distribution diagram of a semiconductor device under a third configuration provided in this application embodiment; Figure 9 A radial O atom flux map of a semiconductor device wafer is provided as an embodiment of this application; Figure 10 A front cross-sectional schematic diagram of another semiconductor device provided in an embodiment of this application; Figure 11 A top view schematic diagram of a reaction chamber cover, spray device and insulating ring of a semiconductor device provided in an embodiment of this application; Figure 12 A schematic diagram of the gas outlet surface of a semiconductor device provided in an embodiment of this application; Figure 13A top view schematic diagram of a reaction chamber cover, spray device, insulating ring and chamber cover ring of a semiconductor device provided for embodiments of this application; Figure 14 This is a schematic diagram of a cavity cover ring structure provided in an embodiment of this application; Figure 15 This is a schematic diagram of another cavity cover ring structure provided in an embodiment of this application; Figure 16 A plasma density distribution diagram of a semiconductor device under a fourth configuration provided in this application embodiment; Figure 17 A plasma density distribution diagram of a semiconductor device under a fifth configuration provided in this application embodiment; Figure 18 This is a partial front cross-sectional view of a semiconductor device provided in an embodiment of this application; Figure 19 A partial front cross-sectional view of another semiconductor device provided in an embodiment of this application; Figure 20 This is a schematic diagram of a flow guide hole arrangement provided in an embodiment of this application; Figure 21 This is a schematic diagram illustrating another method of setting the flow guide hole provided in an embodiment of this application; Figure 22 A schematic diagram illustrating another method of setting the flow guide hole provided in an embodiment of this application; Figure 23 A plasma density distribution diagram of a semiconductor device under a sixth configuration provided in this application embodiment; Figure 24 A plasma density distribution diagram of a semiconductor device under a seventh configuration provided in this application embodiment; Figure 25 A plasma density distribution diagram of a semiconductor device under an eighth configuration provided in this application embodiment; Figure 26 This application provides a wafer radial O atom flux map under an eighth configuration of a semiconductor device. Figure 27 This is a partial front cross-sectional schematic diagram of another semiconductor device provided in an embodiment of this application.

[0059] Explanation of reference numerals in the attached figures: 1-Semiconductor equipment; 11-Reaction chamber; 12-Spray device; 13-Insulating ring; 14-Base; 15-Gas equalization assembly; Discharge area-16; 111-Reaction chamber cover; 121-Base; 122-Gas outlet surface; 131-Protrusion; 1110-Cavity cover ring; 1111-Air inlet; 1211-Fixing part; 1212-Recessed part; 1221-Spray hole; 1331-Air guide hole; 1311-Flow guide hole. Detailed Implementation

[0060] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0061] In the description of this application, the terms “center,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0062] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.

[0063] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly, for example, they can refer to a fixed connection, a detachable connection, or an integral connection. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0064] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0065] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0066] To facilitate understanding of the semiconductor devices provided in the embodiments of this application, some technical terms involved in the embodiments of this application will be briefly explained below.

[0067] Thin film: refers to a relatively thin layer of material with specific functions and properties deposited on the surface of a semiconductor substrate or other medium during semiconductor manufacturing using specific process techniques. The thickness is typically between a few nanometers and a few micrometers. Thin films include semiconductor material thin films, such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), and gallium nitride (GaN); metal material thin films, such as aluminum (Al), copper (Cu), and gold (Au); and insulating material thin films, such as silicon oxide (SiO2) and silicon nitride (Si3N4).

[0068] A silicon wafer is a wafer used to fabricate silicon semiconductor circuits. Its raw material is silicon. High-purity polycrystalline silicon is dissolved, doped with silicon seed crystals, and then slowly pulled out to form a cylindrical single-crystal silicon ingot. After grinding, polishing, and slicing, the silicon ingot is formed into a silicon wafer, or silicon wafer.

[0069] Spray device: In semiconductor manufacturing, this refers to a device used to precisely and uniformly supply process gases into the reaction chamber, such as a spray head or shower head. Through its internal pre-set flow channels, gas distribution structure, spray holes, and other structures, the process gases are delivered to the wafer surface at a preset flow rate and distribution pattern to achieve thin film growth.

[0070] A pedestal (PED), such as a chuck, is a device that securely and flattens a wafer using specific fixing methods (e.g., electrostatic adsorption, mechanical clamping, vacuum adsorption, etc.) to prevent the wafer from shifting or warping due to gas flow, mechanical movement, or temperature changes during the process, thus affecting product yield.

[0071] Plasma-Enhanced Chemical Vapor Deposition (PECVD): Its basic principle involves placing two parallel electrode plates with a certain distance between them in a vacuum environment. One electrode plate is connected to a radio frequency (RF) power supply, while the other is grounded, creating an RF electric field between the two plates. The substrate to be coated is placed between the two electrode plates. The coating process gas is first homogenized in a flow chamber before entering between the two electrode plates, where it is excited into plasma under the influence of the RF electric field. The plasma reacts with the substrate surface, forming a thin film on the substrate surface.

[0072] Parasitic plasma: refers to plasma outside the discharge region 16 (e.g.) in the reaction chamber. Figure 1 Plasma is generated at locations other than those shown in the diagram, where the reactant gas is excited. The generation of parasitic plasma can not only reduce the energy efficiency associated with plasma enhancement processes, but also cause various other problems during plasma processing, such as particulate contamination, thermal shock, premature failure of components within the chamber, and electric arcing.

[0073] Figure 1 This is a front cross-sectional view of a semiconductor device 1 provided in an embodiment of this application. Figure 2 This is a front cross-sectional schematic diagram of another semiconductor device 1 provided in an embodiment of this application.

[0074] like Figure 1 and Figure 2 As shown, the semiconductor device 1 includes a reaction chamber 11, a gas distribution assembly 15, and a base 14. The gas distribution assembly 15 includes a spray device 12 and an insulating ring 13.

[0075] Semiconductor device 1 can be any type of semiconductor device configured with a gas homogenizing component, including but not limited to reactive ion etching (RIE) equipment, inductively coupled plasma (ICP) etching equipment, physical vapor deposition (PVD) equipment, chemical vapor deposition (CVD) equipment, atomic layer deposition (ALD) equipment, or PECVD equipment, etc., and the embodiments of this application are not limited to these. In this application, semiconductor device 1 is described as a PECVD equipment. The reaction chamber 11 has a reaction chamber cover 111, which is used to close the reaction chamber 11, and the spray device 12 is installed on the reaction chamber cover 111.

[0076] The spray device 12 includes a substrate 121 and an outlet surface 122 located at one end of the substrate 121. The other end of the substrate 121 passes through the reaction chamber cover 111 and is fixed to the reaction chamber cover 111. The spray device 12 is used to deliver uniform and stable reaction gas to a designated location within the reaction chamber 11. It should be noted that in PECVD equipment, the spray device 12 is also typically connected to the RF power supply as the upper electrode, forming a discharge region 16 between it and the lower electrode, providing the necessary conditions for the ionization of the reaction gas.

[0077] An insulating ring 13 is fitted onto the outside of the substrate 121 to enable the spray device 12 to adapt to the plasma reaction environment and prevent abnormal discharge through its own insulation to ensure plasma stability. In addition, the insulating ring 13 also needs to have chemical stability and resistance to plasma bombardment to resist corrosive gases and reactive particle erosion in order to extend the life cycle of the spray device 12.

[0078] As an example, the insulating ring 13 can be made of ceramic materials, such as yttrium oxide (Y2O3), aluminum oxide (Al2O3), zirconium oxide (ZrO2), and other insulating and corrosion-resistant materials.

[0079] The base 14 is located within the reaction chamber 11, spaced apart from and opposite to the spray device 12. The base 14 securely and precisely fixes the wafer in a preset position, preventing wafer displacement, slippage, or vibration caused by gas flow or plasma impact during the process. It should be noted that in PECVD equipment, the base 14 typically serves as the lower electrode, forming a discharge region 16 between it and the spray device 12, which serves as the upper electrode, providing the necessary conditions for the ionization of the reaction gases.

[0080] For ease of description, the direction perpendicular to the axis of the substrate 121 is referred to as the first direction X, and the direction parallel to the axis of the substrate 121 is referred to as the second direction Y. It can be understood that all directions on the plane perpendicular to the axis of the substrate 121 in space can be regarded as the first direction X. The first direction X shown in the accompanying drawings of this application is only for illustrative purposes and does not constitute a limitation on the embodiments of this application.

[0081] As an example, a semiconductor device 1 provided in this application embodiment adopts an RF top-feed method, that is, the spray device 12 is connected to the RF power supply as the upper electrode plate, and the base 14 is the grounded lower electrode plate. The spray device 12 and the base 14 form a discharge region 16.

[0082] Understandably, the distance between the spray device 12 and the base 14 in the second direction Y can be adjusted according to different deposited thin film materials, meaning the size of the discharge region 16 in the second direction Y is adjustable. It should be noted that the size of the discharge region 16 in the second direction Y refers to its height in that direction. Specifically, the base 14 is configured to be height-adjustable in the second direction Y, allowing it to rise and fall in accordance with different downward angles of the spray device 12. As an example, the distance between the spray device 12 and the base 14 in the second direction Y can range from 2mm to 50mm.

[0083] like Figure 1 As shown, the dimension L1 of the air outlet surface 122 of the spray device 12 in the first direction X can be equal to the dimension L2 of the portion of the substrate 121 excluding the air outlet surface 122 in the first direction X, that is, L1=L2.

[0084] For example, the spray device 12 is annular, and the inner diameter of the spray device 12 is consistent in the second direction Y.

[0085] like Figure 2 As shown, the dimension L1 of the air outlet surface 122 of the spray device 12 in the first direction X can also be smaller than the dimension L2 of the portion of the substrate 121 away from the air outlet surface 122 in the first direction X, i.e., L1 <L2。

[0086] For example, the spray device 12 is annular along the second direction Y, that is, along the length of the spray device 12. The inner diameter of the spray device 12 is not uniform, and the inner diameter of the air outlet surface 122 is the smallest. That is, the dimension L1 of the air outlet surface 122 of the spray device 12 in the first direction X is smaller than the dimension L2 of the rest of the substrate 121 in the first direction X.

[0087] When the dimension L1 of the outlet surface 122 of the spray device 12 in the first direction X is greater than the dimension L2 of the part of the substrate 121 away from the outlet surface 122 in the first direction X, the space on the back of the spray device 12 (i.e., between the spray device 12 and the reaction chamber cover 111) will provide a space for the parasitic plasma, which will easily cause the parasitic plasma to linger.

[0088] The spray device 12 of the semiconductor device 1 provided in this application eliminates the containment space by setting the size L1 of the gas outlet surface 122 in the first direction X to be less than or equal to the size L2 of the remaining part of the substrate 121 in the first direction X. In addition, the insulating ring 13 isolates the electric field and destroys the plasma retention environment inside the reaction chamber 11, thereby suppressing the adhesion of plasma around the spray device 12 and reducing the amount of parasitic plasma on the spray device 12 during a single deposition process.

[0089] By setting the size L1 of the venting surface 122 in the first direction X to be smaller than the size L2 of the rest of the substrate 121 in the first direction X, compared to the size L2 of the substrate 121 in the first direction X being equal to the size L1 of the venting surface 122 in the first direction X, the parasitic plasma around the spray device 12 can be further suppressed, the amount of parasitic plasma near the spray device 12 during a single deposition process can be reduced, thereby increasing the cumulative limit of the semiconductor device 1 and improving product production efficiency.

[0090] Regarding the reduction of the amount of parasitic plasma by setting the size L1 of the outlet surface 122 in the first direction X to be smaller than the size L2 of the substrate 121 in the first direction X, the relevant experimental data can be found in the following content and will not be described in detail here.

[0091] In some feasible implementations, such as Figure 2As shown, the specific difference between the dimension L1 of the gas outlet surface 122 in the first direction X and the dimension L2 of the part of the substrate 121 near the reaction chamber cover 111 in the first direction X is 50mm~80mm, that is, 50mm≤(L2-L1)≤80mm.

[0092] Within this range, it is possible to reduce the amount of parasitic plasma near the spray device 12 during a single deposition process while ensuring that the outlet area of ​​the spray device 12 is large enough to maintain a large film deposition efficiency.

[0093] For example, the difference between the dimension L1 of the vent surface 122 in the first direction X and the dimension L2 of the part of the substrate 121 near the reaction chamber cover 111 in the first direction X can be 50mm, 55mm, 60mm, 65mm, 70mm, 75mm or 80mm, etc., and there is no limitation here.

[0094] Figure 3 This is a front cross-sectional schematic diagram of another semiconductor device 1 provided in an embodiment of this application. Figure 4 This is a front cross-sectional schematic diagram of another semiconductor device 1 provided in an embodiment of this application. Figure 2 compared to, Figure 3 and Figure 4 Other feasible embodiments that minimize the dimension L1 of the air outlet surface 122 of the spray device 12 in the first direction X.

[0095] like Figure 3 and Figure 4 As shown, in some feasible embodiments, along the second direction Y, the dimension L2 of the portion of the substrate 121 away from the reaction chamber cover 111 in the first direction X is smaller than the dimension L2 of the portion of the substrate 121 close to the reaction chamber cover 111 in the first direction X. In this way, the processing difficulty of the spray device 12 can be reduced, and the flow field of the reaction gas inside the substrate 121 of the spray device 12 can be optimized, so that the reaction gas flows more smoothly inside the substrate 121 and the uniformity of the reaction gas can be improved.

[0096] As an example, such as Figure 3 As shown, the dimension L2 of the portion of the substrate 121 away from the reaction chamber cover 111 in the first direction X is smaller than the dimension L2 of the portion of the substrate 121 near the reaction chamber cover 111 in the first direction X. The front cross-section of the substrate 121 is an isosceles trapezoid.

[0097] As an example, such as Figure 4As shown, the base 121 includes a fixing part 1211 and a recessed part 1212 connected in the second direction Y. The fixing part 1211 is used to pass through the reaction chamber cover 111 and connect to the reaction chamber cover 111 to fix the spraying device 12. Along the second direction Y, that is, in the length direction of the fixing part 1211, the size of the fixing part 1211 is consistent in the first direction X, which facilitates the fixing of the spraying device 12 to the reaction chamber cover 111.

[0098] The sunken part 1212 is located in the reaction chamber 11, and the surface of the sunken part 1212 facing the base 14 is the gas outlet surface 122.

[0099] For example, the size of the recessed portion 1212 in the first direction X is smaller than the size of the fixed portion 1211 in the first direction X, and the size of the recessed portion 1212 in the first direction X remains the same along the second direction Y.

[0100] For example, the size of the portion of the recessed portion 1212 near the fixed portion 1211 in the first direction X is equal to the size of the fixed portion 1211 in the first direction X, and the size of the portion of the recessed portion 1212 away from the fixed portion 1211 in the first direction X is smaller than the size of the fixed portion 1211 in the first direction X. Furthermore, along the second direction Y, the size of the portion of the recessed portion 1212 away from the fixed portion 1211 in the first direction X remains consistent.

[0101] For example, the dimension of the portion of the recessed portion 1212 away from the fixed portion 1211 in the first direction X is less than or equal to the dimension of the portion of the recessed portion 1212 close to the fixed portion 1211 in the first direction X; for example, the front cross-sectional view of the base 121 is a series of isosceles trapezoids and rectangles stacked sequentially, wherein the length of the upper base of each isosceles trapezoid is equal to the length of one side of the rectangle adjacent to and above it, and the length of the lower base of each isosceles trapezoid is equal to the length of one side of the rectangle adjacent to and below it.

[0102] In some feasible implementations, such as Figures 1-4 As shown, along the second direction Y, the insulating ring 13 wraps around the substrate 121. By wrapping the substrate 121 with the insulating ring 13, the gap between the insulating ring 13 and the substrate 121 can be reduced while shielding the edge electric field of the spray device 12, thereby further reducing the plasma retention space and suppressing parasitic plasma.

[0103] Figure 5 This is a graph showing the relationship between ceramic material thickness (mm) and breakdown voltage (kV). The horizontal axis represents ceramic material thickness, and the vertical axis represents breakdown voltage. V38, B601, B40, AT97, and RK87 represent different ceramic material types. Figure 5It can be seen that the greater the thickness of the ceramic material, the higher the breakdown voltage of the ceramic material. In other words, the thicker the ceramic material of the insulating ring 13, the higher the breakdown voltage of the insulating ring 13, which can improve the withstand voltage performance of the semiconductor device 1.

[0104] In the embodiments of this application, along the second direction Y, the insulating ring 13 wraps around the substrate 121, that is, the inner side of the insulating ring 13 matches the outer side shape of the substrate 121. To facilitate the fabrication of the insulating ring 13, along the second direction Y, that is, in the length direction of the insulating ring 13, the outer periphery of the insulating ring 13 has the same dimensions in the first direction X. Since the dimension L2 of the portion of the substrate 121 away from the reaction chamber cover 111 along the second direction Y is smaller in the first direction X, the thickness of the insulating ring 13 along the second direction Y is correspondingly increased. When the insulating ring 13 is fabricated using ceramic material, refer to... Figure 5 It can be seen that the closer to the outlet surface 122, the higher the breakdown voltage of the insulating ring 13.

[0105] Furthermore, within the reaction chamber 11, the closer to the gas outlet 122, the higher the plasma concentration in the escaping reaction gas, and the easier it is for the spray device 12 to be parasitic with plasma. By adopting the above scheme, the thickness of the insulating ring 13 is greater closer to the gas outlet 122, resulting in a higher breakdown voltage. Under the condition of parasitic plasma, it is less likely to be broken down, further improving the reliability of the semiconductor device 1.

[0106] In some feasible implementations, such as Figure 4 As shown, the distance L3 between the air outlet surface 122 of the spray device 12 and the reaction chamber cover 111 in the second direction Y ranges from 5mm to 73mm. For example, the distance L3 between the air outlet surface 122 of the spray device 12 and the reaction chamber cover 111 in the second direction Y can be 5mm, 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, 70mm, or 73mm, etc., and there is no limitation here.

[0107] By setting the distance L3 between the gas outlet surface 122 of the spray device 12 and the reaction chamber cover 111 in the second direction Y to be in the range of 5mm to 73mm, the concentration of parasitic plasma at the edge of the spray device 12 can be reduced, the amount of parasitic plasma near the spray device 12 during a single deposition process can be reduced, thereby increasing the cumulative limit of the semiconductor device 1 and improving product production efficiency.

[0108] In some feasible embodiments, the dimension L1 of the air outlet surface 122 in the first direction X is smaller than the dimension L4 of the base 14 in the first direction X, that is, L1 <L4。

[0109] In some feasible embodiments, the difference between the dimension L1 of the air outlet surface 122 in the first direction X and the dimension L4 of the base 14 in the first direction X ranges from 50mm to 80mm. For example, the difference between the dimension L1 of the air outlet surface 122 in the first direction X and the dimension L4 of the base 14 in the first direction X can be 50mm, 55mm, 60mm, 65mm, 70mm, 75mm or 80mm, etc., and there is no limitation here.

[0110] In some feasible implementations, the size of the air outlet surface 122 in the first direction X ranges from 300mm to 380mm. For example, the size of the air outlet surface 122 in the first direction X can be 300mm, 310mm, 320mm, 330mm, 340mm, 350mm, 360mm, 370mm or 380mm.

[0111] By setting the size L1 of the outlet surface 122 in the first direction X to be smaller than the size L4 of the base 14 in the first direction X, the concentration of parasitic plasma at the edge of the spray device 12 can be reduced.

[0112] The following description, based on the test results, explains the dimension L1 of the above-mentioned air outlet surface 122 in the first direction X, the distance L3 between the air outlet surface 122 and the reaction chamber cover 111 in the second direction Y, and the difference between the dimension L1 of the air outlet surface 122 in the first direction X and the dimension L4 of the base 14 in the first direction X.

[0113] Figure 6 A plasma density distribution diagram of a semiconductor device 1 under a first configuration provided in an embodiment of this application. Figure 7 A plasma density distribution diagram of a semiconductor device 1 under a second configuration provided in this application embodiment; Figure 8 A plasma density distribution diagram of a semiconductor device 1 under a third configuration provided in this application embodiment; Figure 9 A radial O atom flux diagram of a semiconductor device 1 wafer is provided for an embodiment of this application.

[0114] like Figure 6 , Figure 7 , Figure 8 and Figure 9As shown, the plasma density distribution is compared when the distance L3 between the outlet surface 122 of the spray device 12 and the reaction chamber cover 111 in the second direction Y and the size L1 of the outlet surface 122 of the spray device 12 in the first direction X are combined. The first arrangement, Case No. 1, is as follows: the diameter of the air outlet surface 122 of the spray device 12 is 380 mm, and the distance L3 between the air outlet surface 122 and the reaction chamber cover 111 in the second direction Y is 0. The second arrangement, Case No. 2, is as follows: the diameter of the air outlet surface 122 of the spray device 12 is 330 mm, the distance L3 between the air outlet surface 122 and the reaction chamber cover 111 in the second direction Y is 5 mm, and the end of the insulating ring 13 near the air outlet surface 122 of the spray device is flush with the end of the reaction chamber cover 111 near the air outlet surface 122 of the spray device. The third arrangement, Case No. 3, is as follows: the diameter of the air outlet surface 122 of the spray device is 330 mm, the distance L3 between the air outlet surface 122 and the reaction chamber cover 111 in the second direction Y is 68 mm, and the end of the insulating ring 13 near the air outlet surface 122 of the spray device is flush with the air outlet surface 122.

[0115] Region ① is located in discharge region 16, and region ② is located at the edge of spray device 12. The plasma distribution in the three cases is summarized in Table 1.

[0116] Table 1 Summary of Plasma Distribution

[0117] like Figure 6 As shown, under Case No. 1, the plasma density is lowest in region ①, at 2.8e15; and highest in region ②, at 1e16. At this time, the ratio of the peak plasma density in region ② to that in region ① is 360%. The plasma density at the edge of the spray device 12 is much higher than that in the discharge region 16, and parasitic plasma is easily generated at the edge of the spray device 12.

[0118] like Figure 7 As shown, under Case No. 2, the plasma density is the lowest in region ①, at 2.9e15; the plasma density is the highest in region ②, at 6.3e15. At this time, the ratio of the peak plasma density in region ② to that in region ① is 220%. The plasma density at the edge of the spray device 12 is significantly lower than that under Case No. 1, indicating that Case No. 2, which reduces the size L1 of the outlet surface 122 of the spray device 12 in the first direction X, can suppress plasma parasitism to a certain extent compared to Case No. 1.

[0119] like Figure 8As shown, in Case No. 3, the plasma density is highest in region ①, at 2.8e15; the plasma density is lowest in region ②, at 1.1e15. At this time, the ratio of the peak plasma density in region ② to that in region ① is 40%. The plasma density at the edge of the spray device 12 is significantly lower than that in Case No. 1 and Case No. 2. This indicates that compared to Case No. 2 and Case No. 1, reducing the size L1 of the outlet surface 122 of the spray device 12 in the first direction X and increasing the distance L3 between the outlet surface 122 and the reaction chamber cover 111 in the second direction Y reduces the parasitic plasma at the edge of the spray device 12 in Case No. 3 by about one order of magnitude.

[0120] like Figure 9 The figures show the radial O atom flux and O2 flux of the wafer under Case No. 1, Case No. 2, and Case No. 3, respectively. + Ion flux. Referring to Table 1, it can be seen that the radial O atom flux of the wafer under Case No. 1 is 1.4%, and the radial O2 flux of the wafer is... + The ion flux was 2.7%; the radial O atom flux of the wafer under Case No. 2 was 2.4%, and the radial O2 flux of the wafer was... + The ion flux was 5.2%; the radial O atom flux of the wafer in Case No. 3 was 1.7%, and the radial O2 flux of the wafer was... + The ion flux was 2.8%. It can be seen that the radial O flux of the Case No.1 wafer is related to the O2 flux. + The lowest ion flux inhomogeneity was observed in Case No. 2, where the radial O flux and O2 flux of the wafer were compared. + The ion flux non-uniformity was the highest, while the radial O flux and O2 flux of the Case No. 3 wafer were the highest. + The ion flux nonuniformity was less different compared to the lowest Case No.1.

[0121] As can be seen from the above, by reducing the size L1 of the gas outlet surface 122 in the first direction X and increasing the distance L3 between the gas outlet surface 122 and the reaction chamber cover 111 in the second direction Y, it is possible to maintain the radial O flux and O2 of the wafer. +Under the condition of ion flux uniformity, the parasitic plasma at the edge of the spray device 12 is suppressed, thereby reducing the amount of parasitic plasma near the spray device 12 during a single deposition process, thereby increasing the cumulative limit of the semiconductor device 1 and improving product production efficiency. Specifically, taking the semiconductor device 1 as a PECVD device as an example, since the gas equalization component 15 provided in the embodiments of this application can reduce the amount of parasitic plasma near the spray device 12 during a single deposition process, without changing the limit of the amount of parasitic plasma that the spray device 12 in the semiconductor device 1 can withstand, the number of depositions in the semiconductor device 1 can be increased, thereby correspondingly increasing the cumulative thickness of the deposited film, that is, increasing the cumulative limit of the semiconductor device 1.

[0122] Figure 10 This is a front cross-sectional view of another semiconductor device 1 provided in an embodiment of this application. Figure 11 This is a top view schematic diagram of a reaction chamber cover 111, a spray device 12, and an insulating ring 13 of a semiconductor device 1 provided in an embodiment of this application. Figure 12 This is a schematic diagram of the gas outlet surface 122 of a semiconductor device 1 provided in an embodiment of this application.

[0123] In one possible implementation, such as Figure 10 and Figure 11 As shown, the reaction chamber cover 111 is provided with multiple air inlets 1111, which are arranged around the insulating ring 13 and penetrate the reaction chamber cover 111.

[0124] In some embodiments, during the operation of the semiconductor device 1, purge gas can be continuously supplied to the reaction chamber 11 through the air inlet 1111. It is understood that since multiple air inlets 1111 are arranged around the insulating ring 13, the purge gas can form an air curtain outside the discharge region 16, preventing plasma from escaping from the discharge region 16, thereby further reducing the amount of plasma near the spray device 12 and suppressing parasitic plasma around the spray device 12.

[0125] In some possible implementations, such as Figure 12 As shown, the outlet surface 122 of the spray device 12 is provided with multiple spray holes 1221, and the ratio of the diameter of the inlet hole 1111 to the diameter of the spray hole 1221 ranges from 95% to 105%. By setting the diameter of the inlet hole 1111 to be close to the diameter of the spray hole 1221, the flow rate, velocity, and other characteristics of the purge gas provided by the inlet hole 1111 and the reaction gas provided by the outlet surface 122 are similar, reducing the risk of eddy currents generated by the mutual interference between the purge gas and the reaction gas, which would affect the quality of the deposited film, and further suppressing parasitic plasma around the spray device 12.

[0126] Figure 13This is a top view schematic diagram of a reaction chamber cover 111, a spray device 12, an insulating ring 13, and a chamber cover ring 1110 of a semiconductor device 1 provided in an embodiment of this application. Figure 14 This is a schematic diagram of a cavity cover ring 1110 provided in an embodiment of this application. Figure 15 This is a schematic diagram of another cavity cover ring 1110 structure provided in an embodiment of this application.

[0127] In some possible implementations, such as Figure 13 As shown, the reaction chamber cover 111 has a cover ring 1110, which is embedded in the reaction chamber cover 111, and an air inlet 1111 is provided on the cover ring 1110. It should be noted that in some examples, the reaction chamber cover 111 supports the spray device 12, specifically: an insulating ring 13 is sleeved on the outer surface of the base 121 of the spray device 12, and the cover ring 1110 is sleeved on the outer side of the end of the insulating ring 13 near the reaction chamber cover 111. The cover ring 1110 is embedded in the reaction chamber cover 111. That is, the structure of the reaction chamber cover 111 from the inside out is: spray device 12, insulating ring 13, cover ring 1110, and reaction chamber cover 111.

[0128] As an example, such as Figure 14 As shown, the cavity cover ring 1110 can be circular, with multiple air inlets 1111 arranged in a circle and evenly distributed on the circle. It should be noted that the shape of the air inlets 1111 can also be square, regular pentagon, irregular shape or other feasible shape. This application embodiment does not limit this. The distribution of the air inlets 1111 on the cavity cover ring 1110 can also be uneven. This application embodiment does not limit this.

[0129] For example, such as Figure 15 As shown, the air inlet 1111 on the cavity cover ring 1110 is set as an arc shape that matches the shape of the cavity cover ring 1110, and multiple arc-shaped air inlets 1111 are evenly distributed on the cavity cover ring 1110.

[0130] The following explanation, based on experimental results, describes the use of additional purge gas in semiconductor equipment.

[0131] Figure 16 This application provides a plasma density distribution diagram of a semiconductor device 1 under a fourth configuration. Figure 17 A plasma density distribution diagram of a semiconductor device 1 under a fifth configuration provided in an embodiment of this application.

[0132] The fourth configuration, Case No. 4, involves setting the distance L3 between the gas outlet surface 122 and the reaction chamber cover 111 in the second direction Y to 73 mm, and providing a cover ring 1110 to supply purge gas to the interior of the reaction chamber 11 through the air inlet 1111 on the cover ring 1110. The fifth configuration, Case No. 5, involves setting the distance L3 between the gas outlet surface 122 and the reaction chamber cover 111 in the second direction Y to 73 mm, and not providing purge gas.

[0133] Figure 16 and Figure 17 In the middle, region ① is located at the edge of the discharge region 16, and region ② is located around the spray device 12.

[0134] like Figure 16 As shown, under Case No.4, the plasma density is highest in region ① at 4.7e15, the plasma density at the center of discharge region 16 is 3.5e15, and the plasma density is lowest in region ② at 3e13.

[0135] like Figure 17 As shown, in Case No. 5, the plasma density is highest in region ① at 7.1e15, the plasma density at the center of discharge region 16 is 3.6e15, and the plasma density is lowest in region ② at 1.6e15.

[0136] It can be seen that by setting the cavity cover ring 1110 and supplying purge gas to the inside of the reaction chamber 11 through the air inlet 1111 on the cavity cover ring 1110, parasitic plasma around the spray device 12 can be further suppressed.

[0137] Figure 18 This is a partial front cross-sectional view of a semiconductor device 1 provided in an embodiment of this application. Figure 19 This is a partial front cross-sectional view of another semiconductor device 1 provided in an embodiment of this application.

[0138] In some possible implementations, such as Figure 18 and Figure 19 As shown, the insulating ring 13 has a protrusion 131 on the side edge away from the reaction chamber cover 111, and the protrusion 131 surrounds at least a portion of the discharge region 16.

[0139] By providing a protrusion 131 on the side of the insulating ring 13 away from the reaction chamber cover 111, and by surrounding at least a portion of the discharge region 16, the flow field distribution around the spray device 12 inside the reaction chamber 11 can be further altered. This causes the gas escaping from the discharge region 16 to be affected by the protrusion 131, changing its flow direction and preventing the formation of an airflow including high-density plasma around the spray device 12, thereby further suppressing parasitic plasma around the spray device 12.

[0140] In some possible implementations, the distance L5 between the end of the protrusion 131 away from the reaction chamber cover 111 and the gas outlet surface 122 in the second direction Y ranges from 2mm to 50mm. For example, the distance L5 between the end of the protrusion 131 away from the reaction chamber cover 111 and the gas outlet surface 122 in the second direction Y can be 2mm, 5mm, 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, 45mm or 50mm, etc., and there is no limitation here.

[0141] Understandably, the distance L5 between the end of protrusion 131 furthest from the reaction chamber cover 111 and the outlet surface 122 in the second direction Y is the protrusion amplitude of protrusion 131. In some examples, the surrounding effect of protrusion 131 on discharge region 16 can be adjusted by adjusting the protrusion amplitude of protrusion 131. For example, when the size of discharge region 16 in the second direction Y is 10mm and the protrusion amplitude of protrusion 131 is 10mm, protrusion 131 completely surrounds discharge region 16 in the second direction Y; when the size of discharge region 16 in the second direction Y is 10mm and the protrusion amplitude of protrusion 131 is 5mm, protrusion 131 surrounds 30% of discharge region 16 in the second direction Y.

[0142] By setting the distance L5 between the end of the protrusion 131 away from the reaction chamber cover 111 and the gas outlet surface 122 in the second direction Y to be in the range of 2mm to 50mm, the purpose of the protrusion 131 surrounding at least part of the discharge region 16 is achieved.

[0143] Furthermore, in some possible implementations, such as Figure 19 As shown, the protrusion 131 includes a flow guide hole 1311, and a plurality of flow guide holes 1311 are arranged at intervals along the direction surrounding the insulating ring 13.

[0144] Figure 20 This is a schematic diagram illustrating a configuration of the guide hole 1311 provided in an embodiment of this application. Figure 21 This is a schematic diagram illustrating another configuration of the guide hole 1311 provided in an embodiment of this application. Figure 22 This is a schematic diagram of another way of setting the guide hole 1311 provided in the embodiments of this application.

[0145] As an example, such as Figure 20 and Figure 21 As shown, the flow guide hole 1311 can be a hole penetrating the protrusion 131 along the first direction X, and multiple flow guide holes 1311 are arranged at intervals along the direction surrounding the insulating ring 13; Refer to Figure 20 The shape of the guide hole 1311 can be circular, as shown in the reference. Figure 21The shape of the flow guide hole 1311 can also be rectangular. The rectangular flow guide hole 1311 extends along the direction surrounding the insulating ring 13. The shape of the flow guide hole 1311 can also be any other feasible shape. This application embodiment does not limit this.

[0146] Further, continue to refer to Figure 20 and Figure 21 Multiple flow guide holes 1311 can be arranged in multiple rows along the direction surrounding the insulating ring 13, and the multiple rows of flow guide holes 1311 are arranged at intervals in the second direction Y.

[0147] like Figure 22 As shown, the flow guide hole 1311 can also be configured as a through protrusion 131 along the second direction Y, with the end of the flow guide hole 1311 away from the insulating ring 13 located on the outer edge of the base 14.

[0148] In some feasible implementations, the distance between two adjacent guide holes 1311 in the direction surrounding the insulating ring 13 is less than or equal to 2 mm. It should be noted that the distance between two adjacent guide holes 1311 must be sufficient to allow the gas in the discharge region 16 to flow out smoothly and to make the gas flow in the discharge region 16 stable and not prone to turbulence. Therefore, the distance between two adjacent guide holes 1311 in the direction surrounding the insulating ring 13 cannot be too large so that the gas after the reaction can flow out in the discharge region 16.

[0149] The following analysis and explanation are based on the experimental results regarding the case where a protrusion 131 is set on the edge of the insulating ring 13 away from the reaction chamber cover 111.

[0150] Figure 23 This application provides a plasma density distribution diagram under a sixth configuration of a semiconductor device 1, as shown in an embodiment of the present application. Figure 24 This application provides a plasma density distribution diagram under a seventh configuration of a semiconductor device 1, as shown in an embodiment of the present application. Figure 25 This application provides a plasma density distribution diagram of a semiconductor device 1 under an eighth configuration, as shown in the embodiments of this application. Figure 26 This application provides a wafer radial O atom flux diagram under an eighth configuration of a semiconductor device 1.

[0151] Specifically, the sixth setting (Case No. 6) involves not providing the protrusion 131, meaning the protrusion amplitude of 131 is h1 = 0 mm. The seventh setting (Case No. 7) involves the protrusion amplitude of 131 being 10 mm, i.e., h2 = 10 mm, and a guide hole 1311 being provided on the protrusion 131. The eighth setting (Case No. 8) involves the distance L3 between the gas outlet surface 122 and the reaction chamber cover 111 in the second direction Y being set to 68 mm, the protrusion amplitude of 131 being 5 mm, and no guide hole 1311 being provided on the protrusion 131.

[0152] like Figure 23 As shown, in Case No. 6, the plasma density is the highest at the edge of discharge region 16, which is 3.1e15, and the plasma density at the center of discharge region 16 is 1.4e15.

[0153] like Figure 24 As shown, in Case No.7, the plasma density is the highest at the edge of the discharge region 16, which is 2.2e15, and the plasma density at the center of the discharge region 16 is 1.5e15. The plasma is confined within the discharge region 16 by the protrusion 131, and the plasma density around the spray device 12 is low.

[0154] like Figure 25 As shown, in Case No. 8, the plasma density is the highest at the edge of the discharge region 16, which is 5.4e15, the plasma density at the center of the discharge region 16 is 8.5e14, and the plasma density around the spray device 12 is 1.1e15.

[0155] Depend on Figures 23-25 It can be seen that by setting the protrusion 131, the flow field distribution around the discharge region 16 can be changed, effectively reducing the plasma density around the spray device 12 and suppressing parasitic plasma around the spray device 12.

[0156] like Figure 26 As shown, in Case No. 8, protrusion 131 alters the radial distribution of O2.

[0157] Figure 27 This is a partial front cross-sectional view of another semiconductor device 1 provided in an embodiment of this application.

[0158] In some possible implementations, such as Figure 27As shown, the ratio of the wall thickness of the protrusion 131 to the maximum wall thickness of the portion of the insulating ring 13 fitted on the outside of the base 121 ranges from 95% to 105%. For example, the ratio of the wall thickness of the protrusion 131 to the maximum wall thickness of the portion of the insulating ring 13 fitted on the outside of the base 121 can be 95%, 96%, 97%, 98%, 99%, 100%, 101%, 102%, 103%, 104%, or 105%, and no limitation is set here.

[0159] The wall thickness of the protrusion 131 is close to the maximum wall thickness of the insulating ring 13. The protrusion 131 can be directly formed from the end of the insulating ring 13 with a thicker wall, which reduces the difficulty of preparing the insulating ring 13.

[0160] In some possible implementations, such as Figure 19 As shown, the ratio of the wall thickness of the protrusion 131 to the maximum wall thickness of the portion of the insulating ring 13 sleeved on the outside of the base 121 is less than or equal to 30%. For example, the ratio of the wall thickness of the protrusion 131 to the maximum wall thickness of the portion of the insulating ring 13 sleeved on the outside of the base 121 can be 10%, 15%, 20%, 25%, or 30%, etc., and there is no limitation here.

[0161] Thus, by setting the ratio of the wall thickness of the protrusion 131 to the maximum wall thickness of the portion of the insulating ring 13 sleeved on the outside of the substrate 121, the flow field distribution around the spray device 12 in the reaction chamber 11 can be changed, parasitic plasma around the spray device 12 can be suppressed, and it is convenient to manufacture, reducing the structural complexity of the semiconductor device 1 assembly.

[0162] In some feasible implementations, such as Figure 4 As shown, the length L6 of the substrate 121 ranges from 30mm to 100mm. For example, the length L6 of the substrate 121 can be 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, 70mm, 75mm, 80mm, 85mm, 90mm, 95mm or 100mm, etc. There is no limit here.

[0163] By setting the length L6 of the substrate 121 to be in the range of 30mm to 100mm, the length L6 of the substrate 121 is longer than that of some examples of substrate 121. This increases the sinking range of the substrate 121 in the reaction chamber 11, thereby reducing the concentration of parasitic plasma at the edge of the spray device 12, reducing the amount of parasitic plasma near the spray device 12 during a single deposition process, and thus increasing the cumulative limit of the semiconductor device 1 and improving product production efficiency.

[0164] The length L7 of the insulating ring 13 can be equal to or longer than the length L6 of the base 121.

[0165] like Figure 4 As shown, the length L7 of the insulating ring 13 can be equal to the length L6 of the base 121; or, as... Figure 18 As shown, the insulating ring 13 has a protrusion 131, and the length of the insulating ring 13 is greater than the length L6 of the base 121.

[0166] For example, the length L7 of the insulating ring 13 ranges from 30mm to 150mm. For example, the length L7 of the insulating ring 13 can be: 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, 70mm, 75mm, 80mm, 85mm, 90mm, 95mm, 100mm, 110mm, 120mm, 130mm, 140mm or 150mm, etc., and there is no limit here.

[0167] In some possible implementations, such as Figure 4 As shown, the dimension L8 of the insulating ring 13 in the first direction X is larger than the dimension L4 of the base 14 in the first direction X. It can be understood that the larger dimension L8 of the insulating ring 13 in the first direction X enables the discharge region 16 to be confined within the coverage area of ​​the insulating ring 13 in the first direction X, thereby optimizing the distribution of the flow field inside the reaction chamber 11 and further suppressing parasitic plasma around the spray device 12.

[0168] In some possible implementations, such as Figure 4 As shown, the portion of the inner wall of the insulating ring 13 closest to the outlet surface 122 has the smallest dimension in the first direction X. It can be understood that, in accordance with the shape of the spray device 12 base 121, the inner wall dimension of the portion of the insulating ring 13 away from the reaction chamber cover 111 is smaller than the inner wall dimension of the portion of the insulating ring 13 closest to the reaction chamber cover 111, and the inner wall dimension of the portion of the insulating ring 13 closest to the outlet surface 122 has the smallest dimension in the first direction X.

[0169] In some possible implementations, along the second direction Y, the insulating ring 13 wraps around the substrate 121, and the outer wall of the insulating ring 13 is parallel to the second direction Y. That is, the extension direction of the outer wall of the insulating ring 13 remains parallel to the second direction, and the specifications such as the size, position, and shape of the outer wall do not change due to changes in the inner wall size. Alternatively, it can be understood that along the second direction Y, the size of the outer wall of the insulating ring 13 in the first direction X remains unchanged. As an example, the outer wall of the insulating ring 13 can be a cylindrical surface, and along the second direction Y, the outer diameter of this cylindrical surface remains unchanged, thus the outer wall of the cylindrical surface can remain parallel to the second direction Y. Since the inner wall size of the portion of the insulating ring 13 away from the reaction chamber cover 111 is smaller than the inner wall size of the portion of the insulating ring 13 near the reaction chamber cover 111, the wall thickness of the portion of the insulating ring 13 away from the reaction chamber cover 111 is greater than the wall thickness of the portion of the insulating ring 13 near the reaction chamber cover 111. The wall thickness of the insulating ring 13 reaches its maximum at the gas outlet surface 122.

[0170] It should be noted that the closer to the gas outlet surface 122, the higher the plasma concentration inside the reaction chamber 11, and the easier it is for the plasma to parasitize the outer wall of the insulating ring 13. The part of the insulating ring 13 closest to the gas outlet surface 122 has the thickest wall thickness, which can effectively increase the breakdown voltage of the insulating ring 13 at this point, thereby improving the breakdown resistance of the insulating ring 13, and further improving the cumulative limit of the semiconductor device 1 and increasing production efficiency.

[0171] like Figure 4 As shown, this application embodiment provides a spray device 12 for a semiconductor device 1. The spray device 12 includes: a substrate 121 and an air outlet surface 122 located at one end of the substrate 121; the size of the air outlet surface 122 in a first direction X is smaller than the size of the portion of the substrate 121 excluding the air outlet surface 122 in the first direction X; the first direction X is perpendicular to the axial direction of the substrate 121.

[0172] In some possible implementations, the length L6 of the substrate 121 ranges from 30mm to 100mm. For example, the length L6 of the substrate 121 can be 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, 70mm, 75mm, 80mm, 85mm, 90mm, 95mm or 100mm, etc., and there is no limitation here.

[0173] For a detailed description of the specific structure of the spray device 12, please refer to the relevant content in any of the above embodiments, and it will not be repeated here.

[0174] The spray device 12 provided in this application embodiment can suppress the parasitic plasma around the spray device 12, reduce the amount of parasitic plasma near the spray device 12 during a single deposition process, thereby increasing the cumulative limit of the semiconductor device 1 and improving product production efficiency.

[0175] Reference Figures 2-4 The provided semiconductor device 1 includes an insulating ring 13. This application embodiment also provides an insulating ring 13 for use in a semiconductor device 1. The semiconductor device 1 includes a spray device 12, which includes a substrate 121 and an outlet surface 122 located at one end of the substrate 121. The insulating ring 13 is sleeved on the outer side of the substrate 121. The portion of the inner wall of the insulating ring 13 closest to the outlet surface 122 has the smallest spacing in the first direction X, and the first direction X is perpendicular to the axial direction of the insulating ring 13.

[0176] In some possible implementations, the length L7 of the insulating ring 13 ranges from 30mm to 150mm. For example, the length L7 of the insulating ring 13 can be 30mm, 35mm, 40mm, 45mm, 50mm, 55mm, 60mm, 65mm, 70mm, 75mm, 80mm, 85mm, 90mm, 95mm, 100mm, 110mm, 120mm, 130mm, 140mm, or 150mm, etc., and there is no limitation here.

[0177] In some possible implementations, one end of the insulating ring 13 has a protrusion 131; the protrusion 131 has one or more flow guide holes 1311, which penetrate the protrusion 131 in a first direction X.

[0178] For a detailed description of the specific structure of the insulating ring 13, please refer to the relevant content in any of the above embodiments; it will not be repeated here.

[0179] The insulating ring 13 provided in this embodiment is used in conjunction with the spray device 12 to suppress the parasitic plasma around the spray device 12, reduce the amount of parasitic plasma near the spray device 12 during a single deposition process, thereby increasing the cumulative limit of the semiconductor device 1 and improving product production efficiency.

Claims

1. A gas uniformization assembly, comprising: For use in semiconductor devices, the gas equalization assembly includes: A spraying device, the spraying device comprising: a base and an air outlet surface located at one end of the base; An insulating ring is fitted onto the outside of the substrate; Wherein, the dimension of the air outlet surface in the first direction is smaller than the dimension of the portion of the substrate away from the air outlet surface in the first direction, and the first direction is perpendicular to the axial direction of the substrate.

2. The air homogenizing assembly of claim 1, wherein, The difference between the dimension of the air outlet surface in the first direction and the dimension of the portion of the substrate away from the air outlet surface in the first direction is in the range of 50mm to 80mm.

3. The gas distribution assembly of claim 1 or 2, wherein, The substrate includes a fixing part for connecting the reaction chamber cover of the semiconductor device; Along the second direction, the dimensions of the fixing part are the same as those in the first direction; the second direction is parallel to the axial direction of the base.

4. The air homogenizing assembly of claim 3, wherein, The base also includes a recessed portion that is connected to the fixing portion in the second direction; Along the second direction, the dimension of the portion of the sunken portion away from the fixed portion in the first direction is less than or equal to the dimension of the portion of the sunken portion close to the fixed portion in the first direction.

5. The air homogenizing assembly according to any one of claims 1 to 4, characterized in that, The size of the air outlet surface in the first direction ranges from 300mm to 380mm.

6. The air uniformization assembly of any one of claims 1-5, wherein, The dimensions of the substrate in the second direction range from 30 mm to 100 mm.

7. The air uniformization assembly of any one of claims 1-6, wherein, Along the second direction, the insulating ring wraps around the substrate, and the outer wall of the insulating ring is parallel to the second direction.

8. The air uniformization assembly of any one of claims 1-7, wherein, The length of the insulating ring ranges from 30mm to 150mm.

9. The air uniformization assembly of any one of claims 1-8, wherein, The insulating ring has a protrusion along a second direction at one end near the air outlet surface of the spray device.

10. The air homogenizing assembly of claim 9, wherein, The protrusion has one or more flow guide holes that penetrate the protrusion in a first direction.

11. The air homogenizing assembly of claim 10, wherein, The number of flow guide holes is multiple, and the multiple flow guide holes are arranged at intervals along the direction surrounding the insulating ring.

12. The gas equalization component according to claim 11, characterized in that, The distance between two adjacent flow guide holes in the direction surrounding the insulating ring is less than or equal to 2 mm.

13. The gas equalization component according to claim 10, characterized in that, The number of the flow guide holes is multiple, and the multiple flow guide holes are arranged at intervals in the second direction, and the flow guide holes extend in the direction surrounding the insulating ring.

14. The gas equalization component according to any one of claims 9 to 13, characterized in that, The ratio of the wall thickness of the protrusion to the maximum wall thickness of the portion of the insulating ring fitted on the outside of the substrate ranges from 95% to 105%.

15. The gas equalization component according to claim 9, characterized in that, The ratio of the wall thickness of the protrusion to the maximum wall thickness of the portion of the insulating ring fitted onto the outside of the substrate is less than or equal to 30%.

16. A semiconductor device, characterized in that, include: A reaction chamber having a reaction chamber cover; The gas equalization assembly according to any one of claims 1 to 15, the gas equalization assembly includes: a spraying device and an insulating ring; the spraying device includes: a base and an air outlet surface located at one end of the base, the end of the base away from the air outlet surface passing through the reaction chamber cover and fixed to the reaction chamber cover; The base is located inside the reaction chamber and is spaced apart from and opposite to the spraying device.

17. The semiconductor device according to claim 16, characterized in that, The distance between the air outlet surface of the spray device and the reaction chamber cover in the second direction ranges from 5mm to 73mm.

18. The semiconductor device according to claim 16 or 17, characterized in that, The dimension of the air outlet surface in the first direction is smaller than the dimension of the base in the first direction.

19. The semiconductor device according to claim 18, characterized in that, The difference between the dimension of the air outlet surface in the first direction and the dimension of the base in the first direction is in the range of 50mm to 80mm.

20. The semiconductor device according to any one of claims 16 to 19, characterized in that, The reaction chamber cover is provided with multiple air inlets, which are arranged around the insulating ring and penetrate the reaction chamber cover.

21. The semiconductor device according to claim 20, characterized in that, The air outlet surface of the spray device is provided with multiple spray holes, and the ratio of the diameter of the air inlet hole to the diameter of the spray hole is in the range of 95% to 105%.

22. The semiconductor device according to claim 20 or 21, characterized in that, The reaction chamber cover has a cover ring embedded in the reaction chamber cover, and the air inlet is disposed on the cover ring.

23. The semiconductor device according to any one of claims 16 to 22, characterized in that, The insulating ring is provided with protrusions; The area between the spray device and the base is a discharge area, and the protrusion surrounds at least a portion of the discharge area. The distance between the end of the protrusion furthest from the reaction chamber cover and the gas outlet surface in the second direction ranges from 2mm to 50mm.

24. The semiconductor device according to any one of claims 16 to 23, characterized in that, The dimension of the insulating ring in the first direction is larger than the dimension of the base in the first direction.

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